Channel temperature testing method for AlGaN / GaN HEMT device capable of inhibiting trap effect

Abstract

The invention discloses a channel temperature testing method for an AlGaN / GaN HEMT device capable of inhibiting a trap effect, and the method comprises the steps: measuring a first pulse output characteristic curve of a tested device at a first static bias point and a second pulse output characteristic curve of the tested device at a second static bias point at room temperature under a dark condition, and applying other temperatures different from the room temperature to the tested device, measuring a plurality of third pulse output characteristic curves at the first static bias point at the temperature; under the UV illumination condition, measuring a fourth pulse output characteristic curve of the measured device at the second static bias point at the room temperature, and recording the UV illumination dose when the fourth pulse output characteristic curve and the first pulse output characteristic curve coincide; measuring a direct-current output characteristic curve of the measured device at room temperature under the UV illumination condition of the UV illumination dose; and extracting the cross point of each third pulse output characteristic curve and the DC output characteristic curve, and taking the temperature corresponding to the cross point as the channel temperature of the tested device during DC working.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor device technology, specifically relating to a method for testing the channel temperature of AlGaN / GaN HEMT devices to suppress the trapping effect. Background Technology

[0002] As a third-generation semiconductor device, GaN-based HEMT devices have considerable application potential in microwave and high-temperature fields due to their high power density and wide bandwidth. However, under prolonged operation, GaN-based HEMT devices exhibit significant self-heating effects, causing a substantial increase in junction temperature. This leads to degradation of material and electrical properties, ultimately resulting in reliability issues. Therefore, monitoring the temperature of GaN-based HEMT devices is essential.

[0003] Compared to physical contact and optical testing, electrical methods utilize temperature-sensitive parameters of electrical properties for measurement, offering rapid, simple, efficient, and non-destructive temperature monitoring. However, in GaN-based HEMT devices, trapping and self-heating effects coexist and both affect electrical test results. Eliminating the influence of trapping effects and correlating electrical test results with self-heating effects is crucial.

[0004] Currently, the most widely used electrical testing methods based on thermal resistance include: 1) Method and apparatus for measuring temperature rise and thermal resistance of Schottky gate field-effect transistors Application Number: CN201310591383.X Publication (Announcement) Number: CN103616628A This patent uses FPGA design to acquire and set drain-source voltage, drain-source current, and gate-source voltage. By using a constant-temperature reference junction voltage, it reduces the error in calculating temperature rise, more accurately measures the transient heating response curve of the device, and identifies the main thermal resistance composition of the device.

[0005] However, this method is relatively complex to test and requires high precision; the Schottky effect is complex and has many interfering factors, and if the fitting of the junction voltage is not linear, the result will be inaccurate.

[0006] 2) Junction temperature testing method for AlGaN / GaN high electron mobility transistors Application Number: CN201711024322.X Publication (Announcement) Number: CN107833840A This patent uses Schottky contact resistance as an electrical sensitive parameter. By establishing a calibration curve, it links the Schottky contact resistance under different bias conditions with the device junction temperature, thereby achieving accurate measurement of the device junction temperature.

[0007] However, this method causes a temperature change after the bias is cut off, and does not suppress the trapping effect.

[0008] 3) S. Martin-Horcajo et al ., "Simple and Accurate Method to EstimateChannel Temperature and Thermal Resistance in AlGaN / GaN HEMTs," in IEEE Transactions on Electron Devices , vol. 60, no. 12, pp. 4105-4111, Dec. 2013, doi: 10.1109 / TED.2013.2284851. This article found that at a certain temperature, the drain current decreases linearly with temperature. Therefore, a standard curve under pulsed conditions was obtained to determine the channel temperature and thermal resistance.

[0009] However, this method does not take into account the effects of current collapse, trapping effect, etc. on electrical properties.

[0010] 4) A. Santarelli et al ., "A Double-Pulse Technique for the Dynamic I / VCharacterization of GaN FETs," in IEEE Microwave and Wireless Components Letters , vol. 24, no. 2, pp. 132-134, Feb. 2014, doi: 10.1109 / LMWC.2013.2290216. This article adopts a standard double pulse with an extremely short interval after the pre-pulse, thereby reducing the impact of trap capture on current testing.

[0011] However, this method ensures that the traps capture as many charge carriers as possible before testing, thus eliminating the influence of the traps on electrical testing. However, it is not suitable for monitoring devices in operation. Summary of the Invention

[0012] To address the aforementioned problems in the prior art, this invention provides a method for testing the channel temperature of AlGaN / GaN HEMT devices to suppress the trapping effect. The technical problem to be solved by this invention is achieved through the following technical solution: This invention provides a method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect. The method includes: Under dark conditions, the first pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point was measured at room temperature. Under dark conditions, the second pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point was measured at room temperature. Under dark conditions, a temperature other than room temperature is applied to the AlGaN / GaN HEMT device under test, and the same test conditions as the first pulse output characteristic curve are used to measure several third pulse output characteristic curves of the AlGaN / GaN HEMT device under test at the first static bias point at this temperature. Under UV illumination, using the same test conditions as the second pulse output characteristic curve, the fourth pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point was measured at room temperature, and the UV illumination dose when the fourth pulse output characteristic curve coincided with the first pulse output characteristic curve was recorded; wherein, during the UV illumination process, the trapping effect of the AlGaN / GaN HEMT device under test was suppressed by adjusting the angle of the UV illumination. Under UV irradiation conditions of the UV light dose, using the same test conditions as the first pulse output characteristic curve, the DC output characteristic curve of the AlGaN / GaN HEMT device under test at room temperature was measured. Extract the intersection point of each third pulse output characteristic curve and the DC output characteristic curve, and take the temperature corresponding to the intersection point as the channel temperature of the AlGaN / GaN HEMT device under test when it is operating under DC.

[0013] In one embodiment of the present invention, measuring the first pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point under dark conditions includes: Under dark conditions, set the gate voltage V of the AlGaN / GaN HEMT device under test. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the first static bias point is V. g =0V、V d =0V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the first pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point at room temperature.

[0014] In one embodiment of the present invention, measuring the second pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point under dark conditions includes: Under dark conditions, set the gate voltage V of the AlGaN / GaN HEMT device under test. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the second static bias point is V. g =-8V、V d =10V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The voltage was varied from 0V to 10V, and the second pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point was measured at room temperature.

[0015] In one embodiment of the present invention, under dark conditions, a temperature different from room temperature is applied to the AlGaN / GaN HEMT device under test, and the same test conditions corresponding to the first pulse output characteristic curve are used to measure several third pulse output characteristic curves of the AlGaN / GaN HEMT device under test at the first static bias point at this temperature, including: Under dark conditions, set the gate voltage V of the AlGaN / GaN HEMT device under test. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the first static bias point is V. g =0V、V d =0V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, and adjust the temperature controller to apply a temperature different from room temperature to the AlGaN / GaN HEMT device under test, and measure the output characteristic curves of several third pulses of the AlGaN / GaN HEMT device under test at the first static bias point at this temperature.

[0016] In one embodiment of the present invention, the temperature applied to the AlGaN / GaN HEMT device under test, other than room temperature, includes 75°C, 100°C, 125°C, and 175°C.

[0017] In one embodiment of the present invention, under UV illumination, using the same test conditions corresponding to the second pulse output characteristic curve, the fourth pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature is measured, and the UV illumination dose when the fourth pulse output characteristic curve coincides with the first pulse output characteristic curve is recorded, including: Under UV illumination, the gate voltage V of the AlGaN / GaN HEMT device under test is set. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the second static bias point is V. g =-8V、V d =10V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the fourth pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature, and adjust the UV light dose so that the fourth pulse output characteristic curve coincides with the first pulse output characteristic curve, and record the UV light dose at this time.

[0018] In one embodiment of the present invention, under UV irradiation conditions of the UV light dose, using the same test conditions corresponding to the first pulse output characteristic curve, the DC output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point at room temperature is measured, including: Under UV light irradiation conditions, the gate voltage V is set using the aforementioned UV light dose. g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the DC output characteristic curve of the AlGaN / GaNHEMT device under test at room temperature.

[0019] In one embodiment of the present invention, during the entire testing process, the AlGaN / GaN HEMT under test is placed on a probe stage, and a voltage is applied to the AlGaN / GaN HEMT under test using a semiconductor parameter analyzer.

[0020] In one embodiment of the present invention, the method further includes: Based on the channel temperature of the tested AlGaN / GaN HEMT device during DC operation, the relationship between channel temperature and device power dissipation is obtained.

[0021] The beneficial effects of this invention are: This invention proposes a novel method for testing the channel temperature of AlGaN / GaN HEMT devices to suppress the trapping effect. Specifically, it utilizes the pulse output characteristic curves of different static bias points under dark and UV illumination conditions to determine the UV illumination dose. This dose ensures that the trapping effect of the tested AlGaN / GaN HEMT device is suppressed. The DC output characteristics are then measured to determine the channel temperature of the tested AlGaN / GaN HEMT device during DC operation. As can be seen, this invention uses UV illumination to suppress the trapping effect and extracts the drain current value as an electrical sensitive parameter. This ensures that the change in drain current with channel temperature during operation of the tested AlGaN / GaN HEMT device primarily reflects the self-heating effect. Therefore, the channel temperature measured by this method is closer to the actual channel temperature of the tested AlGaN / GaN HEMT device than that obtained by general electrical testing, effectively improving the accuracy of the test. Furthermore, this invention is simple to operate and easy to implement.

[0022] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0023] Figure 1 This is a schematic flowchart of a method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect, provided by an embodiment of the present invention. Figure 2 This is a schematic flowchart of another method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect, provided by an embodiment of the present invention. Figure 3 This is a schematic diagram of the first pulse output characteristic curve, the second pulse output characteristic curve, and the fourth pulse output characteristic curve of the AlGaN / GaNHEMT device under test on a silicon substrate at room temperature, provided by an embodiment of the present invention. Figure 4 This is a schematic diagram of the intersection of the third pulse output characteristic curve and the DC output characteristic curve of the AlGaN / GaNHEMT device under test on a silicon substrate at room temperature, provided by an embodiment of the present invention. Figure 5 This is a schematic diagram showing the relationship between the channel temperature of the tested AlGaN / GaNHEMT device on a silicon substrate and the device power dissipation at room temperature, provided by an embodiment of the present invention. Detailed Implementation

[0024] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0025] Please see Figure 1 This invention provides a method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect, specifically including the following steps: S10. Under dark conditions, measure the first pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point at room temperature.

[0026] In this embodiment of the invention, measuring the first pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point under dark conditions includes: Under dark conditions, set the gate voltage V of the AlGaN / GaN HEMT device under test. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the first static bias point is V. g =0V、V d =0V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the first pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point at room temperature.

[0027] S20. Under dark conditions, measure the second pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature.

[0028] In this embodiment of the invention, measuring the second pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point under dark conditions includes: Under dark conditions, set the gate voltage V of the AlGaN / GaN HEMT device under test. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the second static bias point is V. g =-8V、V d =10V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d=0.1V, measure the second pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature.

[0029] S30. Under dark conditions, apply a temperature different from room temperature to the AlGaN / GaN HEMT device under test, and use the same test conditions as the first pulse output characteristic curve to measure several third pulse output characteristic curves of the AlGaN / GaN HEMT device under test at the first static bias point at this temperature.

[0030] In this embodiment of the invention, under dark conditions, a temperature different from room temperature is applied to the AlGaN / GaN HEMT device under test, and several third pulse output characteristic curves of the AlGaN / GaN HEMT device under test at the first static bias point are measured at this temperature, including: Under dark conditions, set the gate voltage V of the AlGaN / GaN HEMT device under test. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the first static bias point is V. g =0V、V d =0V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, and adjust the temperature controller to apply a temperature different from room temperature to the AlGaN / GaN HEMT device under test. Measure the output characteristic curves of several third pulses of the AlGaN / GaN HEMT device under test at the first static bias point at this temperature, and use these as calibration curves. When applying other temperatures, maintain the temperature for 2 minutes to allow the temperature of the AlGaN / GaN HEMT device under test to reach a steady state before testing.

[0031] In this embodiment of the invention, the temperatures applied to the AlGaN / GaN HEMT device under test, other than room temperature, include 75°C, 100°C, 125°C, and 175°C.

[0032] S40. Under UV illumination, using the same test conditions as the second pulse output characteristic curve, measure the fourth pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature, and record the UV illumination dose when the fourth pulse output characteristic curve coincides with the first pulse output characteristic curve; wherein, during UV illumination, the trapping effect of the AlGaN / GaN HEMT device under test is suppressed by adjusting the angle of UV illumination.

[0033] In this embodiment of the invention, under UV illumination, using the same test conditions corresponding to the second pulse output characteristic curve, the fourth pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature is measured, and the UV illumination dose when the fourth pulse output characteristic curve coincides with the first pulse output characteristic curve is recorded, including: Under UV illumination, the gate voltage V of the AlGaN / GaN HEMT device under test is set. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the second static bias point is V. g =-8V、V d =10V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the fourth pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature, and adjust the UV light dose so that the fourth pulse output characteristic curve coincides with the first pulse output characteristic curve, and record the UV light dose at this time.

[0034] S50. Under UV irradiation conditions with UV light dose, using the same test conditions as the first pulse output characteristic curve, measure the DC output characteristic curve of the AlGaN / GaN HEMT device under test at room temperature.

[0035] In this embodiment of the invention, under UV irradiation conditions with a UV light dose, the DC output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point at room temperature is measured, including: Under UV irradiation conditions, the gate voltage V is set using the UV irradiation dose recorded by S40. g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the DC output characteristic curve of the AlGaN / GaN HEMT device under test at room temperature.

[0036] S60. Extract the intersection point of each third pulse output characteristic curve and DC output characteristic curve, and take the temperature corresponding to the intersection point as the channel temperature of the AlGaN / GaN HEMT device under test during DC operation, denoted as . .

[0037] In the entire testing process of S10~S60 in this embodiment of the invention, the AlGaN / GaN HEMT under test is placed on the probe stage, and a voltage is applied to the AlGaN / GaN HEMT under test through a semiconductor parameter analyzer.

[0038] Further, please see Figure 2 The channel temperature testing method for AlGaN / GaN HEMT devices that suppress trapping effects proposed in this embodiment of the invention further includes: S70. Based on the channel temperature of the AlGaN / GaN HEMT device under test during DC operation, obtain the relationship between the channel temperature and the device power dissipation.

[0039] To verify the effectiveness of the channel temperature testing method for AlGaN / GaN HEMT devices that suppress trapping effects provided in this embodiment of the invention, the following experiments were conducted.

[0040] Experiment 1: At room temperature, the channel temperature of AlGaN / GaNHEMT devices on silicon substrates was measured.

[0041] S10: Under dark conditions, measure the first pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point at room temperature.

[0042] Under dark conditions, the AlGaN / GaN HEMT device under test on the silicon substrate is placed on a probe stage, and a voltage is applied using a semiconductor parameter analyzer to set the gate voltage V. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the first static bias point is V. g =0V、V d =0V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the pulse output characteristics of the AlGaN / GaN HEMT device under test at room temperature, and record it as the first pulse output characteristic curve.

[0043] S20. Under dark conditions, measure the second pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature.

[0044] Under dark conditions, set the gate voltage V of the AlGaN / GaN HEMT device under test. g and drain voltage V dThe pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the second static bias point is V. g =-8V、V d =10V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the pulse output characteristics of the AlGaN / GaN HEMT device under test at room temperature, and record it as the second pulse output characteristic curve.

[0045] S30. Under dark conditions, apply a temperature different from room temperature to the AlGaN / GaN HEMT device under test, and use the same test conditions as the first pulse output characteristic curve to measure several third pulse output characteristic curves of the AlGaN / GaN HEMT device under test at the first static bias point at this temperature.

[0046] Using the same settings as in S10, adjust the temperature controller to apply a different temperature to the AlGaN / GaN HEMT device under test, and continuously monitor the temperature until the temperature of the AlGaN / GaN HEMT device under test reaches complete stability. Subsequently, before electrical characterization, the probe needs to remain in contact with the AlGaN / GaN HEMT device under test for 2 minutes, and then measure several fourth pulse output characteristic curves of the AlGaN / GaN HEMT device under test at the first static bias point at 75℃, 100℃, 125℃, and 175℃, i.e., calibration curve IV.

[0047] S40. Under UV illumination, using the same test conditions as the second pulse output characteristic curve, measure the fourth pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature, and record the UV illumination dose when the fourth pulse output characteristic curve coincides with the first pulse output characteristic curve.

[0048] Using the same settings as in S20, UV light is applied to the AlGaN / GaN HEMT device under test, and pulse testing is performed again to obtain several fourth pulse output characteristic curves. By adjusting the angle of UV light, the trapping effect of the AlGaN / GaN HEMT device under test can be suppressed more effectively, and the UV dose is adjusted so that the fourth pulse output characteristic curve coincides with the first pulse output characteristic curve.

[0049] S50. Under UV irradiation conditions with UV light dose, using the same test conditions as the first pulse output characteristic curve, measure the DC output characteristic curve of the AlGaN / GaN HEMT device under test at room temperature.

[0050] Using the UV dose recorded in S30 and with the same settings as in S10, the gate voltage V is set. g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the DC output characteristic curve of the AlGaN / GaN HEMT device under test at room temperature.

[0051] S60. Extract the intersection point of each third pulse output characteristic curve and DC output characteristic curve, and take the temperature corresponding to the intersection point as the channel temperature of the AlGaN / GaN HEMT device under test when it is operating under DC.

[0052] By extracting the intersection points of each third pulse output characteristic curve and the DC output characteristic curve, the channel temperature T during DC operation under that bias can be obtained. ch . Specifically: In V g Under the condition that V = -2 V, V d = 5.58 V at T ch = 75 ℃; In V g Under the condition that V = -1, V d = 4.51 V at T ch = 75℃; In V g Under the condition that V = 0, V d = 4.23 V at T ch = 75℃; In V g Under the condition that V = 1, V d = 4.16 V at T ch = 75℃; In V g Under the condition that V = 2 V, V d = 4.00 V at T ch = 75 ℃.

[0053] S70. Based on the channel temperature of the AlGaN / GaN HEMT device under test during DC operation, obtain the relationship between the channel temperature and the device power dissipation.

[0054] The channel temperature T obtained from S60 was calculated. ch The corresponding device power dissipation P d . Specifically: In V g Under the condition of = -2 V, Tch = At 75 ℃, P d = 2.91 W; In V g Under the condition that T = -1 V, ch = At 75 ℃, P d = 3.38 W; In V g Under the condition that T = 0 V, ch = At 75 ℃, P d = 3.92 W; In V g Under the condition that T = 1 V, ch = At 75 ℃, P d = 4.31 W; In V g Under the condition of = 2 V, T ch = At 75 ℃, P d = 4.26 W.

[0055] The above data can be used to deduce how to obtain T. ch With P d The changing relationship.

[0056] For Experiment 1, the first pulse output characteristic curve, the second pulse output characteristic curve, and the fourth pulse output characteristic curve of the tested AlGaN / GaNHEMT device are as follows: Figure 3 As shown, Figure 3 The horizontal axis represents the drain voltage (V), and the vertical axis represents the drain current (mA / mm). Figure 3 The effect of UV light on suppressing the trapping effect was demonstrated. Figure 3 In the middle: the solid black line represents the first static bias point (V) under dark conditions. g =0V、V d The first pulse output characteristic curve is shown when the voltage is 0V, indicating that the trapping effect is not present. The solid blue line represents the second static bias point (V) under dark conditions. g =-8V、V d The second pulse output characteristic curve at 10V shows significant current collapse. The red solid line represents the fourth pulse output characteristic curve at the first static bias point under UV illumination. The high overlap between the black and red curves indicates that the trapping effect on the current is essentially eliminated under UV illumination. This result provides a reliable basis for subsequent tests, ensuring the accuracy and repeatability of the test results. Subsequent DC tests were all conducted under UV illumination.

[0057] The intersection of the third pulse output characteristic curve and the DC output characteristic curve is as follows: Figure 4 As shown, Figure 4 The horizontal axis represents the drain voltage (V), and the vertical axis represents the drain current (mA / mm). Figure 4 In the diagram: the red solid line represents the DC output characteristic curve under UV illumination at 25℃, while the black solid line represents the third pulse response curve at the first static bias point under dark conditions and a temperature of 100℃. The intersection of the two curves has the same bias condition and output current value, thus it can be assumed that the channel temperature of the tested AlGaN / GaNHEMT device is 100℃ when operating under DC conditions at this bias. Based on the intersection point, the thermal resistance value under this specific bias condition can be accurately determined using the thermal resistance calculation formula, thereby establishing a quantitative relationship between thermal resistance and bias voltage.

[0058] The relationship between channel temperature and device power dissipation is as follows: Figure 5 As shown, Figure 5 The horizontal axis represents the device dissipated power (W), and the vertical axis represents the channel temperature (°C). Figure 5 In the diagram: solid dots represent data points obtained through experimental measurements, while solid lines represent fitted curves based on measured data. Figure 5 The curves show the characteristic curves of channel temperature as a function of device power dissipation in the range of gate voltage from -2V to 2V, which can be used to determine the corresponding channel temperature values ​​under different device power dissipation conditions.

[0059] Experiment 2: At room temperature, the channel temperature of the AlGaN / GaNHEMT device on the sapphire substrate was measured.

[0060] S10~S50 use the same settings as Experiment 1.

[0061] S60: Extract the intersection point of each third pulse output characteristic curve and DC output characteristic curve, and take the temperature corresponding to the intersection point as the channel temperature of the AlGaN / GaN HEMT device under test when it is operating under DC.

[0062] By extracting the intersection points of each third pulse output characteristic curve and the DC output characteristic curve, the channel temperature T during DC operation under that bias can be obtained. ch . Specifically: In V g Under the condition that V = -2 V, V d = 5.21 V at T ch = 85℃; In V g Under the condition that V = -1, Vd = 2.58 V at T ch = 65 ℃; In V g Under the condition that V = 0, V d = 9.31 V at T ch = 165 ℃; In V g Under the condition that V = 1, V d = 7.04 V at T ch = 165 ℃. S70. Based on the channel temperature of the AlGaN / GaN HEMT device under test during DC operation, obtain the relationship between the channel temperature and the device power dissipation.

[0063] The channel temperature T obtained from S60 was calculated. ch The corresponding device power dissipation P d . Specifically: In V g Under the condition of = -2 V, T ch = At 85 ℃, P d = 1.81 W; In V g Under the condition that T = -1 V, ch = At 65 ℃, P d = 1.34 W; In V g Under the condition that T = 0 V, ch = At 165 ℃, P d = 5.87 W; In V g Under the condition that T = 1 V, ch = At 165 ℃, P d = 5.60 W.

[0064] The above data can be used to deduce how to obtain T. ch With P d The changing relationship.

[0065] Experiment 3: At high temperature, the channel temperature of AlGaN / GaNHEMT devices on silicon substrates was tested.

[0066] S10~S50 use the same settings as Experiment 1.

[0067] S60: Extract the intersection point of each third pulse output characteristic curve and DC output characteristic curve, and take the temperature corresponding to the intersection point as the channel temperature of the AlGaN / GaN HEMT device under test when it is operating under DC.

[0068] By extracting the intersection points of each third pulse output characteristic curve and the DC output characteristic curve, the channel temperature T during DC operation under that bias can be obtained. ch . Specifically: When the ambient temperature is 65℃: In V g Under the condition that V = -2 V, V d = 3.28 V at T ch = 75℃; In V g Under the condition that V = -1, V d = 4.41 V at T ch = 75℃; In V g Under the condition that V = 0, V d = 5.46 V at T ch = 75 ℃. When the ambient temperature is 55℃: In V g Under the condition that V = -2 V, V d = 3.21 V at T ch = 75℃; In V g Under the condition that V = -1, V d = 4.37 V at T ch = 75℃; In V g Under the condition that V = 0, V d = 5.40 V at T ch = 75 ℃. S70. Based on the channel temperature of the AlGaN / GaN HEMT device under test during DC operation, obtain the relationship between the channel temperature and the device power dissipation.

[0069] The channel temperature T obtained from S60 was calculated. ch The corresponding device power dissipation P d . Specifically: When the ambient temperature is 65℃: In V g Under the condition of = -2 V, T ch = At 75 ℃, P d = 1.41 W; In V g Under the condition that T = -1 V, ch = At 75 ℃, P d = 2.84 W; In V g Under the condition that T = 0 V,ch = At 75 ℃, P d = 4.46 W.

[0070] When the ambient temperature is 55℃: In V g Under the condition of = -2 V, T ch = At 75 ℃, P d = 1.37 W; In V g Under the condition that T = -1 V, ch = At 75 ℃, P d = 2.80 W; In V g Under the condition that T = 0 V, ch = At 75 ℃, P d = 4.38 W.

[0071] The above data can be used to deduce how to obtain T. ch With P d The changing relationship.

[0072] In summary, the channel temperature testing method for AlGaN / GaN HEMT devices proposed in this invention, which aims to suppress the trapping effect, is a novel method for testing the channel temperature of AlGaN / GaN HEMT devices. Specifically, it utilizes the pulse output characteristic curves of different static bias points under dark and UV illumination conditions to determine the UV illumination dose. This UV illumination dose ensures that the trapping effect of the tested AlGaN / GaN HEMT device is suppressed. Then, the DC output characteristics are measured to determine the channel temperature of the tested AlGaN / GaN HEMT device during DC operation. It is evident that this invention uses UV illumination to suppress the trapping effect and extracts the drain current value as an electrical sensitive parameter. This ensures that the change in drain current with channel temperature during operation of the tested AlGaN / GaN HEMT device primarily reflects the self-heating effect. Therefore, the channel temperature measured by the method proposed in this invention is closer to the actual channel temperature of the tested AlGaN / GaN HEMT device than the results of general electrical tests, effectively improving the accuracy of the test. Furthermore, this invention is simple to operate and easy to implement.

[0073] In the description of this invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0074] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art, by reviewing the specification and accompanying drawings, will understand and implement other variations of the disclosed embodiments in carrying out the claimed invention. In the specification, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. While certain measures are described in different embodiments, this does not mean that these measures cannot be combined to produce good results.

[0075] The above content is merely a few specific examples of the present invention and does not constitute any limitation on the present invention. Obviously, those skilled in the art, after understanding the content and principles of the present invention, may make various modifications and changes in form and detail without departing from the principles of the present invention. However, these modifications and changes based on the ideas of the present invention are still within the scope of the claims of the present invention.

Claims

1. A method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect, characterized in that, The method includes: Under dark conditions, the first pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point was measured at room temperature. Under dark conditions, the second pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point was measured at room temperature. Under dark conditions, a temperature other than room temperature is applied to the AlGaN / GaN HEMT device under test, and the same test conditions as the first pulse output characteristic curve are used to measure several third pulse output characteristic curves of the AlGaN / GaN HEMT device under test at the first static bias point at this temperature. Under UV illumination, using the same test conditions as the second pulse output characteristic curve, the fourth pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point was measured at room temperature, and the UV illumination dose when the fourth pulse output characteristic curve coincided with the first pulse output characteristic curve was recorded; wherein, during the UV illumination process, the trapping effect of the AlGaN / GaN HEMT device under test was suppressed by adjusting the angle of the UV illumination. Under UV irradiation conditions of the UV light dose, using the same test conditions as the first pulse output characteristic curve, the DC output characteristic curve of the AlGaN / GaN HEMT device under test at room temperature was measured. Extract the intersection point of each third pulse output characteristic curve and the DC output characteristic curve, and take the temperature corresponding to the intersection point as the channel temperature of the AlGaN / GaN HEMT device under test when it is operating under DC.

2. The method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect according to claim 1, characterized in that, Under dark conditions, the first pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point was measured at room temperature, including: Under dark conditions, set the gate voltage V of the AlGaN / GaN HEMT device under test. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the first static bias point is V. g =0V、V d =0V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the first pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point at room temperature.

3. The method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect according to claim 1, characterized in that, Under dark conditions, the second pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point was measured, including: Under dark conditions, set the gate voltage V of the AlGaN / GaN HEMT device under test. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the second static bias point is V. g =-8V、V d =10V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the second pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature.

4. The method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect according to claim 1, characterized in that, Under dark conditions, a temperature different from room temperature is applied to the AlGaN / GaN HEMT device under test, and the same test conditions corresponding to the first pulse output characteristic curve are used. Several third pulse output characteristic curves of the AlGaN / GaN HEMT device under test at the first static bias point are measured at this temperature, including: Under dark conditions, set the gate voltage V of the AlGaN / GaN HEMT device under test. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the first static bias point is V. g =0V、V d =0V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, and adjust the temperature controller to apply a temperature different from room temperature to the AlGaN / GaN HEMT device under test, and measure the output characteristic curves of several third pulses of the AlGaN / GaN HEMT device under test at the first static bias point at this temperature.

5. The method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect according to claim 4, characterized in that, Other temperatures applied to the AlGaN / GaN HEMT device under test, other than room temperature, include 75°C, 100°C, 125°C, and 175°C.

6. The method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect according to claim 1, characterized in that, Under UV illumination, using the same test conditions as the second pulse output characteristic curve, the fourth pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature was measured, and the UV illumination dose when the fourth pulse output characteristic curve coincided with the first pulse output characteristic curve was recorded, including: Under UV illumination, the gate voltage V of the AlGaN / GaN HEMT device under test is set. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the second static bias point is V. g =-8V、V d =10V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the fourth pulse output characteristic curve of the AlGaN / GaN HEMT device under test at the second static bias point at room temperature, and adjust the UV light dose so that the fourth pulse output characteristic curve coincides with the first pulse output characteristic curve, and record the UV light dose at this time.

7. The method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect according to claim 1, characterized in that, Under UV irradiation conditions of the stated UV light dose, using the same test conditions corresponding to the first pulse output characteristic curve, the DC output characteristic curve of the AlGaN / GaN HEMT device under test at the first static bias point at room temperature is measured, including: Under UV illumination, the gate voltage V of the AlGaN / GaN HEMT device under test is set using the UV illumination dose. g and drain voltage V d The pulse width is 250ns, the pulse period is 1ms, the source is grounded, and the first static bias point is V. g =0V、V d =0V, gate voltage V g The change from -2V to 2V, ∆V g =1V, and at the same time, the drain voltage V under each gate voltage. d The change from 0V to 10V, ∆V d =0.1V, measure the DC output characteristic curve of the AlGaN / GaN HEMT device under test at room temperature.

8. The method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect according to claim 1, characterized in that, Throughout the testing process, the AlGaN / GaN HEMT under test was placed on the probe stage, and a voltage was applied to the AlGaN / GaN HEMT under test using a semiconductor parameter analyzer.

9. The method for testing the channel temperature of an AlGaN / GaN HEMT device to suppress the trapping effect according to claim 1, characterized in that, The method further includes: Based on the channel temperature of the tested AlGaN / GaN HEMT device during DC operation, the relationship between channel temperature and device power dissipation is obtained.

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