Method for simulating a three-phase inverter of a power module and related device

Abstract

The embodiment of the application provides a kind of power module three-phase inverter simulation method and related equipment, belong to power electronic device technical field.The method includes obtaining the measured data of transfer characteristic curve, output characteristic curve, turn-on loss and turn-off loss of power semiconductor;According to the relationship between the measured data of power semiconductor and power loss, data fitting is carried out, to obtain pure loss model, wherein, electrical parameter includes junction temperature, drain-source voltage, gate-source voltage and switching frequency;According to pure loss model, three-phase inverter circuit is built, and electrical simulation parameter is obtained by running three-phase inverter circuit;Power loss simulation value is obtained by inputting electrical simulation parameter into pure loss model for power loss simulation processing;Power loss simulation value is input into preset thermal resistance model for temperature rise simulation processing, to obtain temperature rise simulation value.The application can shorten development cycle, reduce cost, improve the accuracy and safety of test by simulation instead of sample physical test.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power electronics, and particularly relates to a power module three-phase inverter simulation method and related equipment. BACKGROUND

[0002] As a main component of electric vehicle drive, the electrical characteristics, thermal characteristics and reliability of the power module three-phase inverter need to meet the design requirements. At present, after the development and design of the power module are completed, the actual electrical test and bench test need to be performed after the sample is made. However, when the test does not meet the design target, the packaging design needs to be adjusted, and then the process of sample making and testing is experienced, and the development cycle is long. Moreover, when the test is in an extreme condition such as short circuit, there is a risk of short circuit explosion.

[0003] In summary, the power module in the related art has the technical problems of high cost, long cycle and high test risk when the sample is tested, which need to be improved. SUMMARY

[0004] The main purpose of the embodiments of the present application is to provide a power module three-phase inverter simulation method and related equipment, which can shorten the development cycle, reduce the cost, and improve the accuracy and safety of the test by replacing the sample test with simulation.

[0005] To achieve the above-mentioned purpose, one aspect of the embodiments of the present application provides a power module three-phase inverter simulation method, which comprises the following steps:

[0006] Obtaining measured data of a transfer characteristic curve, an output characteristic curve, a turn-on loss and a turn-off loss of a power semiconductor;

[0007] Performing data fitting on the relationship between electrical parameters and power loss of the power semiconductor according to the measured data to obtain a pure loss model, wherein the electrical parameters include junction temperature, drain-source voltage, gate-source voltage and switching frequency;

[0008] Building a three-phase inverter circuit according to the pure loss model, and obtaining electrical simulation parameters by running the three-phase inverter circuit;

[0009] Inputting the electrical simulation parameters into the pure loss model for power loss simulation processing to obtain a power loss simulation value;

[0010] Inputting the power loss simulation value into a preset thermal resistance model for temperature rise simulation processing to obtain a temperature rise simulation value, wherein the thermal resistance model pre-stores thermal resistance parameters of different heat dissipation structures.

[0011] In some embodiments, the obtaining of the measured data of the transfer characteristic curve, the output characteristic curve, the turn-on loss and the turn-off loss of the power semiconductor comprises the following steps:

[0012] measuring the drain current of the power semiconductor as a function of the gate-source voltage at different temperatures and different drain-source voltages to obtain first characteristic data;

[0013] measuring the drain current of the power semiconductor as a function of the drain-source voltage at different temperatures and different gate-source voltages to obtain second characteristic data;

[0014] measuring the turn-on loss and the turn-off loss of the power semiconductor at different bus voltages, different load currents, different junction temperatures, and different gate resistances using double-pulse testing to obtain third characteristic data;

[0015] integrating the first characteristic data, the second characteristic data, and the third characteristic data to obtain measured data.

[0016] In some embodiments, the data fitting of the relationship between the electrical parameters and the power loss of the power semiconductor according to the measured data to obtain a pure loss model comprises the following steps:

[0017] performing multivariate nonlinear fitting of the relationship between the junction temperature, the drain-source voltage, the gate-source voltage, and the drain current according to the measured data to obtain a current model;

[0018] performing turn-on loss fitting according to the current model and the drain-source voltage to obtain a turn-on loss model;

[0019] performing switching loss fitting according to the turn-on loss, the turn-off loss, and the switching frequency to obtain a switching loss model;

[0020] performing power loss fitting according to the turn-on loss model and the switching loss model to obtain a pure loss model.

[0021] In some embodiments, the multivariate nonlinear fitting of the relationship between the junction temperature, the drain-source voltage, the gate-source voltage, and the drain current according to the measured data to obtain a current model comprises the following steps:

[0022] performing polynomial regression analysis with the junction temperature, the drain-source voltage, and the gate-source voltage as independent variables and the drain current as a dependent variable to obtain a multivariate nonlinear equation, wherein the multivariate nonlinear equation comprises a first nonlinear term of the junction temperature and the gate-source voltage, a second nonlinear term of the junction temperature and the drain-source voltage, a first linear term of the gate-source voltage, and a second linear term of the drain-source voltage;

[0023] optimizing the to-be-fitted parameters of the multivariate nonlinear equation according to the measured data to minimize errors to obtain optimal parameter values;

[0024] According to the multivariate nonlinear equation and the optimal parameter value, a current model is obtained.

[0025] In some embodiments, the three-phase inverter circuit is built according to the pure loss model, and electrical simulation parameters are obtained by running the three-phase inverter circuit, including the following steps:

[0026] The power semiconductors in each bridge arm of the three-phase inverter circuit are replaced by the pure loss model, and electrical simulation parameters are obtained by running the three-phase inverter circuit based on a preset simulation environment condition.

[0027] In some embodiments, the power loss simulation value is input into a preset thermal resistance model for temperature rise simulation processing to obtain a temperature rise simulation value, including the following steps:

[0028] The thermal resistance parameters of the thermal resistance model are determined according to the simulation environment condition;

[0029] The temperature rise simulation value is calculated according to the power loss simulation value and the thermal resistance parameters.

[0030] To achieve the above-mentioned purpose, another aspect of the embodiments of the present application proposes a three-phase inverter simulation system of a power module, the system comprising:

[0031] A real measurement data acquisition module is configured to acquire real measurement data of transfer characteristic curves, output characteristic curves, turn-on loss and turn-off loss of power semiconductors;

[0032] A data fitting module is configured to perform data fitting on the relationship between electrical parameters and power loss of power semiconductors according to the real measurement data to obtain a pure loss model, wherein the electrical parameters include junction temperature, drain-source voltage, gate-source voltage and switching frequency;

[0033] A circuit simulation module is configured to build a three-phase inverter circuit according to the pure loss model, and to obtain electrical simulation parameters by running the three-phase inverter circuit;

[0034] A power loss simulation module is configured to input the electrical simulation parameters into the pure loss model for power loss simulation processing to obtain a power loss simulation value;

[0035] A temperature rise simulation module is configured to input the power loss simulation value into a preset thermal resistance model for temperature rise simulation processing to obtain a temperature rise simulation value, wherein the thermal resistance model has pre-stored thermal resistance parameters of different heat dissipation structures.

[0036] To achieve the above-mentioned purpose, another aspect of the embodiments of the present application proposes an electronic device, which comprises a memory and a processor, the memory stores a computer program, and the processor implements the above-mentioned method when executing the computer program.

[0037] To achieve the above object, another aspect of the embodiment of the present application provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the above method.

[0038] To achieve the above object, another aspect of the embodiment of the present application provides a computer program product, which comprises a computer program, and the computer program is executed by a processor to implement the above method.

[0039] The embodiment of the present application at least has the following beneficial effects: the present application provides a power module three-phase inverter simulation method and related equipment, the scheme comprises obtaining the measured data of the transfer characteristic curve, the output characteristic curve, the turn-on loss and the turn-off loss of the power semiconductor; data fitting is performed on the relationship between the electrical parameters and the power loss of the power semiconductor according to the measured data, to obtain a pure loss model, wherein the electrical parameters include junction temperature, drain-source voltage, gate-source voltage and switching frequency, and the pure loss model with the electrical parameters as input and the loss power as output is established by using the measured device characteristic curve and the switching loss data. A three-phase inverter circuit is built according to the pure loss model, and electrical simulation parameters are obtained by running the three-phase inverter circuit; the power loss simulation value is obtained by inputting the electrical simulation parameters into the pure loss model for power loss simulation processing, and the temperature rise simulation value is obtained by inputting the power loss simulation value into a preset thermal resistance model for temperature rise simulation processing, the use of the modeling method based on the pure loss model for simulation of the three-phase inverter instead of actual testing of the sample can improve the simulation accuracy of the three-phase inverter, greatly reduce the simulation time, shorten the development cycle of the power module, reduce the cost investment, and improve the accuracy and safety of the test. BRIEF DESCRIPTION OF DRAWINGS

[0040] Figure 1 is a flowchart of the power module three-phase inverter simulation method provided by the embodiment of the present application;

[0041] Figure 2 is a circuit schematic diagram of the three-phase inverter circuit provided by the embodiment of the present application;

[0042] Figure 3 is a circuit schematic diagram of the control circuit provided by the embodiment of the present application;

[0043] Figure 4 is a circuit schematic diagram of the load circuit provided by the embodiment of the present application;

[0044] Figure 5 is a circuit schematic diagram of the thermal resistance model provided by the embodiment of the present application;

[0045] Figure 6 is a structural schematic diagram of the system provided by the embodiment of the present application;

[0046] Figure 7 Fig. 1 is a schematic diagram of a hardware structure of an electronic device according to an embodiment of the present application. DETAILED DESCRIPTION

[0047] In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not intended to limit the present application. When the following description refers to the accompanying drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementation manners described in the following exemplary embodiments do not represent all the implementation manners consistent with the embodiments of the present application, but are only examples of systems and methods consistent with some aspects of the embodiments of the present application as detailed in the appended claims.

[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terms used herein are only for the purpose of describing the embodiments of the present application and are not intended to limit the present application.

[0049] The power module three-phase inverter simulation method provided by the embodiments of the present application relates to the technical field of power electronics. The power module three-phase inverter simulation method provided by the embodiments of the present application can be applied to a terminal, can be applied to a server, and can also be software running in a terminal or a server. In some embodiments, the terminal can be a smart phone, a tablet computer, a notebook computer, a desktop computer, a smart speaker, a smart watch, a vehicle-mounted terminal, and the like, but is not limited thereto. The server end can be configured as a stand-alone physical server, can be configured as a server cluster or a distributed system formed by multiple physical servers, can be configured as a cloud server providing basic cloud computing services such as cloud service, cloud database, cloud computing, cloud function, cloud storage, network service, cloud communication, middleware service, domain name service, security service, CDN, and big data and artificial intelligence platform, and the server can also be a node server in a blockchain network. The software can be an application that implements the power module three-phase inverter simulation method, and the like, but is not limited to the above forms.

[0050] The application is operable in a multitude of general or special computer system environments or configurations. Examples of well known computing systems, environments, and / or configurations that can be suitable for use with the application include personal computers, server computers, handheld or laptop devices, tablet devices, multiprocessor systems, microprocessor-based systems, set top boxes, programmable consumer electronics, network PCs, minicomputers, mainframe computers, distributed computing environments that include any of the above systems or devices, and the like. The application can be described in the general context of computer-executable instructions, such as program modules, being executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, and the like, that perform particular tasks or implement particular abstract data types. The application can also be practiced in distributed computing environments where tasks are performed by remote processing devices that are linked through a communications network. In a distributed computing environment, program modules can be located in local and remote computer storage media including memory storage devices.

[0051] Figure 1 is an optional flowchart of a three-phase inverter simulation method of a power module provided by the embodiment of the application, Figure 1 The method in the embodiment of the application can include, but is not limited to, steps S101 to S105.

[0052] In step S101, measured data of a transfer characteristic curve, an output characteristic curve, turn-on loss and turn-off loss of a power semiconductor are obtained.

[0053] In step S102, data fitting is performed on the relationship between electrical parameters and power loss of the power semiconductor according to the measured data, to obtain a pure loss model.

[0054] In step S103, a three-phase inverter circuit is built according to the pure loss model, and electrical simulation parameters are obtained by running the three-phase inverter circuit.

[0055] In step S104, the electrical simulation parameters are input into the pure loss model for power loss simulation processing, to obtain a power loss simulation value.

[0056] In step S105, the power loss simulation value is input into a preset thermal resistance model for temperature rise simulation processing, to obtain a temperature rise simulation value.

[0057] In the embodiment, the power semiconductor is an electronic device for realizing conversion or control of electric energy. According to the device structure, the existing power semiconductor can be divided into diodes, power transistors, thyristors and the like. The power transistor is divided into bipolar junction transistors (BJT, triodes), junction field effect transistors (JFET), metal oxide field effect transistors (MOSFET) and insulated gate bipolar transistors (IGBT) and the like.

[0058] Specifically, the embodiment obtains measured data as a basis for subsequent modeling by measuring the transfer characteristic curve (Id-Vgs), the output characteristic curve (Id-Vds), the turn-on loss (Eon) and the turn-off loss (Eoff) of the power semiconductor.

[0059] The transfer characteristic curve is a curve with the gate-source voltage (Vds) as the abscissa and the drain current (Id) as the ordinate, representing the law of change of Id with Vgs. The output characteristic curve is a curve with the drain-source voltage (Vds) as the abscissa and the drain current as the ordinate, representing the law of change of Id with Vds. By reading the transfer characteristic curve and the output characteristic curve, the Id value under different Vgs and Vds can be read out.

[0060] Since the turn-on and turn-off of the power semiconductor are not completed instantaneously, there is an overlap area of voltage and current in the transition time, thereby generating switching loss, wherein the switching loss includes turn-on loss and turn-off loss, the turn-on loss represents the loss caused by the single turn-on of the power semiconductor, and the turn-off loss represents the loss caused by the single turn-off of the power semiconductor.

[0061] Then, after obtaining comprehensive measured data, according to the measured transfer and output characteristic curves, the data fitting software is used to perform data fitting on the power loss semiconductor, a suitable equation is selected to establish the relationship between the electrical parameters and the power loss, and a pure loss model with input of electrical parameters and output of power loss is established. The model simplifies the complex semiconductor physical solving process into a mapping of electrical parameters and power loss, which reduces the calculation complexity from the root and can improve the simulation accuracy of three-phase inversion. The electrical parameters include junction temperature (Tj), drain-source voltage, gate-source voltage and switching frequency (f_sw), the junction temperature represents the actual working temperature of the power semiconductor, and the switching frequency represents the number of actions of the power semiconductor per second.

[0062] It should be noted that the embodiment is only exemplary, and for other types of power semiconductors, as long as the corresponding electrical parameters are obtained and the relationship between the electrical parameters and the power loss is data fitted, the pure loss model can be obtained, and the embodiment of the application is not specifically limited.

[0063] After completing the pure loss model modeling, a three-phase inverter circuit including the pure loss model is built in a circuit simulation environment to perform system simulation. When running the circuit simulation, the simulation engine will solve the electrical simulation parameters (Tj, Vds, Vgs and f_sw) required for each input port of the pure loss model in real time according to the circuit topology and control logic.

[0064] The power loss simulation process is synchronous with the circuit simulation. During the circuit simulation, each pure loss model receives electrical simulation parameters representing the current working state from the circuit simulation in real time, and immediately performs operations according to the input parameters by using preset equations and data in the model, to quickly calculate the power loss of the power semiconductor replaced by the pure loss model at this moment, and obtain a power loss simulation value.

[0065] Finally, the power loss simulation value output by the pure loss model is input into a preset thermal resistance model, and the thermal resistance model has pre-stored thermal resistance parameters of different heat dissipation structures. The mapping relationship between power loss and temperature rise can be queried according to the current simulation environment, and a temperature rise simulation value is calculated.

[0066] It should be noted that the thermal resistance model is a mapping model similar to the input loss and the output temperature rise. Different thermal resistance models can be obtained according to different heat dissipation structures, water flow and initial reference temperature, and the thermal resistance model can be completed by thermal simulation calculation software.

[0067] Optionally, the calculated temperature rise simulation value can be used to update the junction temperature, and the data is fed back to the pure loss model as the next calculation, so as to form a dynamic and closed-loop electro-thermal combined simulation, and accurately predict the state of the power module under real working conditions.

[0068] The measured data of the embodiment construct the pure loss model to replace the sample test. By establishing the relationship between electrical parameters and power loss, a reliable virtual verification environment is constructed, any working condition can be set for repeated verification and optimization, so that the process of "design - sample - test - failure - redesign" is simplified to "design - simulation - optimization", which greatly reduces the dependence on the real object, avoids the risk of device damage caused by test failure, improves the safety of the test, and shortens the development cycle and reduces the cost investment.

[0069] In some embodiments, step S101 can include but is not limited to steps S201 to S204.

[0070] Step S201, the drain current of the power semiconductor is measured under different temperatures and different drain-source voltages, and the transfer characteristic curve of the drain current with the gate-source voltage is obtained, to obtain first characteristic data.

[0071] Step S202, the drain current of the power semiconductor is measured under different temperatures and different gate-source voltages, and the output characteristic curve of the drain current with the drain-source voltage is obtained, to obtain second characteristic data.

[0072] Step S203, the turn-on loss and turn-off loss of the power semiconductor are measured by double-pulse test under different bus voltages, different load currents, different junction temperatures and different gate resistances, to obtain third characteristic data.

[0073] Step S204, integrating the first characteristic data, the second characteristic data and the third characteristic data to obtain the measured data.

[0074] In the embodiment, the Id-Vgs curve (Id-Vgs) at different temperatures can be obtained by measuring at different temperatures and different Vgs, and the first characteristic data is obtained.

[0075] For example, the transfer characteristic curve of the power semiconductor at a plurality of junction temperature points and a plurality of Vds points is obtained, including but not limited to the transfer characteristic curve of the power semiconductor at a plurality of Vds points of one junction temperature point and the transfer characteristic curve of the power semiconductor at a plurality of junction temperature points of one Vds point.

[0076] The Id-Vds curve (Id-Vds) at different temperatures can be obtained by measuring at different temperatures and different Vgs, and the second characteristic data is obtained.

[0077] For example, the output characteristic curve of the power semiconductor at a plurality of junction temperature points and a plurality of Vgs points is obtained, including but not limited to the output characteristic curve of the power semiconductor at a plurality of Vgs points of one junction temperature point and the output characteristic curve of the power semiconductor at a plurality of junction temperature points of one Vgs point.

[0078] The different switching losses (Eon, Eoff) can be obtained by double-pulse testing the power semiconductor at different bus voltages (Vdc), different load currents (Id), different junction temperatures (Tj) and different gate resistances (Rg, using the typical value of the target driver), and the third characteristic data is obtained.

[0079] Specifically, the turn-on loss Eon and the turn-off loss Eoff can be obtained by the following formula:

[0080] (1);

[0081] (2);

[0082] Wherein, tid Id=10% steady-state current Id corresponds to the time, tvds Vds=10% DC bus voltage Vdc corresponds to the time.

[0083] The collection of the measured data is completed by steps S201 to S203, and the data basis for subsequent modeling is provided.

[0084] In some embodiments, step S102 can include but is not limited to steps S301 to S304.

[0085] Step S301, according to the measured data, the relationship between the junction temperature, the drain-source voltage, the gate-source voltage and the drain current is multi-variable nonlinear fitting, and the current model is obtained.

[0086] Step S302, according to the current model and the drain-source voltage, the conduction loss fitting is carried out, and the conduction loss model is obtained.

[0087] Step S303, according to the turn-on loss, the turn-off loss and the switching frequency, the switching loss fitting is carried out, and the switching loss model is obtained.

[0088] Step S304, according to the conduction loss model and the switching loss model, the power loss fitting is carried out, and the pure loss model is obtained.

[0089] In this embodiment, the measured data covers the complete output characteristics of the power semiconductor under different junction temperatures, different gate-source voltages and different drain-source voltage combinations. Considering that the temperature and voltage have a coupled effect on the current, rather than an independent effect, in order to accurately capture the complex coupling effect between the junction temperature, the drain-source voltage and the gate-source voltage, a multi-variable nonlinear analysis method is used to fit the relationship between the junction temperature, the drain-source voltage, the gate-source voltage and the drain current, and a current model is established, which takes the junction temperature, the drain-source voltage and the gate-source voltage as input, and the drain current as output.

[0090] The essence of the conduction loss is the power consumed when the current flows through the device, which follows Ohm's law. Based on this, the drain current output by the current model is used for conduction loss fitting with the drain-source voltage in the electrical parameters, and a conduction loss model is obtained. This model can calculate the product of the drain current and the drain-source voltage by using a multiplication operator, and fit the conduction loss of the power semiconductor. The calculation formula is:

[0091] P_cond=Id×Vds(3);

[0092] Wherein, P_cond represents the conduction loss.

[0093] The switching loss model is used to quantify the power consumed by the power semiconductor in the switching transient process. The construction of this model depends on the turn-on loss and the turn-off loss collected by the double pulse test. At the same time, since the higher the switching frequency, the more the number of switching times per unit time, the cumulative switching loss increases linearly. After switching loss fitting, the expression of the switching loss model is:

[0094] P_sw=f_sw×(Eon+Eoff)(4);

[0095] Wherein, P_sw represents the switching loss, f_sw is the modulation frequency of the high-frequency triangular wave in three-phase inversion, i.e. the switching frequency, and Eon, Eoff are the turn-on loss and the turn-off loss in the measured data.

[0096] Finally, the power synthesis is performed to complete the construction of the pure loss model, which is an integrated calculation module, and the function of the pure loss model is to sum the conduction loss and the sharing of the switching loss, and the output of the conduction loss model is added to the output of the switching loss model through an adder to obtain the total power loss.

[0097] The calculation formula of the power loss is:

[0098] P_loss=P_cond+P_sw(5);

[0099] Wherein, P_loss represents the power loss.

[0100] In some embodiments, step S301 can include but is not limited to steps S401 to S403.

[0101] Step S401, polynomial regression analysis is performed with the junction temperature, the drain-source voltage and the gate-source voltage as independent variables and the drain current as dependent variable to obtain a multivariate nonlinear equation.

[0102] Step S402, the parameters to be fitted of the multivariate nonlinear equation are optimized according to the measured data to minimize the error to obtain the optimal parameter value.

[0103] Step S403, the current model is obtained according to the multivariate nonlinear equation and the optimal parameter value.

[0104] In this embodiment, the junction temperature (Tj), the gate-source voltage (Vgs) and the drain-source voltage (Vds) are set as independent variables, the drain current (Id) is set as dependent variable, and a function form capable of reflecting the coupling relationship is selected as the fitting framework.

[0105] Specifically, polynomial regression is a regression analysis method that introduces high-order terms of independent variables to fit the nonlinear relationship in the data. Compared with simple linear regression, polynomial regression can better capture the complex characteristics of the data. In this embodiment, a multivariate nonlinear equation containing a first nonlinear term of the junction temperature and the gate-source voltage, a second nonlinear term of the junction temperature and the drain-source voltage, a first linear term of the gate-source voltage and a second linear term of the drain-source voltage is designed as the fitting framework, and the expression of the multivariate nonlinear equation is:

[0106] Id=k1×Tj×Vgs k2 +k3×Vgs+k4×Tj×Vds k5 +k6×Vds+k7(6);

[0107] Wherein, k1, k2, k3, k4, k5, k6, k7 are parameters to be fitted, Id is in A, Tj is in K, and Vgs and Vds are in V.

[0108] The first nonlinear term (Tj x Vgs k2 ) is used to quantify the coupling effect of junction temperature and gate-source voltage, which can describe how temperature variation modulates the control efficiency of gate-source voltage on current.

[0109] Specifically, the control ability of gate-source voltage Vgs on channel current (i.e. transconductance, usually related to Vgs k2 ) is not fixed, but strongly depends on junction temperature, which is physically rooted in the combined effect of two competing mechanisms: the decrease of carrier mobility with temperature rise, and the linear decrease of threshold voltage with temperature rise. To reflect how temperature variation changes the control efficiency of gate, this embodiment characterizes the nonlinear modulation of junction temperature on device transconductance through the nonlinear term, so as to accurately describe the difference of current generated by the same gate voltage at different temperatures.

[0110] The second nonlinear term (Tj x Vds k5 ) is used to quantify the coupling effect of junction temperature and drain-source voltage, which can describe how temperature variation modulates the control efficiency of drain-source voltage on current.

[0111] Specifically, the influence of drain-source voltage Vds on current (such as channel length modulation effect, the strength of which is usually related to Vds k5 ) is modulated by temperature. The physical nature is that temperature rise exacerbates carrier scattering, leading to mobility degradation, so that the control efficiency of drain electric field (proportional to Vds) on current changes. To dynamically capture how temperature variation changes the effectiveness of drain electric field, this embodiment characterizes the modulation effect of junction temperature on output conductance through the nonlinear term, so as to accurately simulate the slope change of output characteristic curve at different temperatures.

[0112] It should be noted that the parameter k4 is usually negative, which physically reflects the negative weakening effect of temperature rise on carrier mobility.

[0113] It can be understood that by taking junction temperature as the core variable through the first and second nonlinear terms, the nonlinear effects of gate-source and drain-source electric fields are coupled respectively, so as to realize the direct description of the "temperature-electric field" cross-coupling effect on the mathematical model, greatly improving the accuracy and universality of the model in a wide temperature range and a wide voltage range.

[0114] In the data fitting software (such as MATLAB, Origin, etc.), the nonlinear least squares method is used to minimize the root mean square error between the model calculation value and the measured data points as the optimization objective, and the parameters to be fitted are iteratively optimized.

[0115] Exemplarily, seven to-be-fitted parameters are initialized, reasonable initial values are set, and then the difference between the model prediction value and the measured data point is calculated through a loop, and the to-be-fitted parameters are continuously iteratively updated in the direction of minimizing the difference, and finally a set of optimal parameter values are obtained.

[0116] The optimal parameter values are substituted back into the multivariate nonlinear equation, that is, formula (6), to obtain a parameter-determined and calculable expression, which is the current model.

[0117] The embodiment constructs a current model that can be embedded in circuit simulation, inputs the junction temperature, drain-source voltage and gate-source voltage, and outputs the predicted drain current, thereby providing accurate current characteristic description for subsequent loss calculation and electro-thermal joint simulation.

[0118] In some embodiments, step S103 can include but is not limited to step S501.

[0119] Step S501, replacing the power semiconductors in each bridge arm of the three-phase inverter circuit with a pure loss model, and running the three-phase inverter circuit based on the preset simulation environment conditions to obtain electrical simulation parameters.

[0120] In the embodiment, reference is made to Figure 2 , Figure 2 The ordinal tags U, V, and W are three phases, and H and L represent upper and lower bridges. U, V, W, H, and L are only used to identify the same device used in different positions in the three-phase inverter circuit, for example, U_H represents the U-phase upper bridge, and W_L represents the W-phase lower bridge.

[0121] Specifically, first, a typical topology structure of a three-phase two-level voltage type inverter bridge is built, and the elements in the three-phase inverter circuit include a direct current power supply (Vdc, E_DS in Figure 2 ), a bus capacitor C1, an ideal diode D, a load (such as R and L_load in Figure 4 ), an ideal switch, etc. As shown in Figure 3 , the control circuit of the three-phase inverter circuit includes a carrier (triangular wave) generator E_Triangle, a modulation wave (sine wave) generator E_sinU, E_sinV, E_sinW, a PWM modulator COMP_DIG_U, COMP_DIG_V, COMP_DIG_W, a dead time generator DEADTIME1, and a gate drive model Dri_U_H, Dri_U_L, Dri_V_H, Dri_V_L, Dri_W_H, Dri_W_L (output target drive voltage Vgs).

[0122] Since the ideal switch in the simulation software cannot accurately simulate the loss, the ideal switch in the three-phase upper and lower bridge arms is replaced with a pure loss model, the pure loss model is connected to each power device, and during the replacement process, the correct electrical connection is ensured, and the voltage signal across the original switch is connected to the Vds input port of the pure loss model; as shown in Figure 2 Vgs voltage between Pin_HG and Pin_HS, i.e. the Vgs voltage of the H bridge of the phase, is used to drive the MOS tube, so after replacing with the pure loss model, the driving voltage Vgs output by the gate driver model is connected to the Vgs input port of the pure loss model.

[0123] Before the circuit simulation starts, the simulation parameters are set to build the simulation environment conditions, including but not limited to junction temperature, DC power supply voltage value, bus capacitance value, modulation frequency, carrier frequency, gate resistance Rg, dead zone voltage time, MOS tube switching voltage, simulation duration, etc. Among these parameters, the modulation frequency is f_sw, which is usually set in the carrier generator before simulation, and the rest are fixed values in fixed working condition simulation. In a single simulation (same working condition), the fixed values do not need to be changed under the condition that the working condition does not change, and they have been set in the device internal parameter page during the circuit drawing process.

[0124] When running the simulation of the three-phase inverter circuit, the simulation engine will automatically solve the state of the circuit based on the circuit topology and component characteristics, and calculate the Vgs and Vds information in real time, and together with f_sw and Tj set in the simulation environment conditions, form the electrical simulation parameters.

[0125] It should be noted that Tj can be a fixed value set in the simulation environment conditions, or a new Tj calculated from the temperature rise data output by the thermal resistance model. The new Tj is fed back to the pure loss model as the input of the next simulation step.

[0126] In some embodiments, step S105 can include but is not limited to steps S601 to S602.

[0127] Step S601, determining the thermal resistance parameter of the thermal resistance model according to the simulation environment conditions.

[0128] Step S602, calculating the temperature rise simulation value according to the power loss simulation value and the thermal resistance parameter.

[0129] In this embodiment, the simulation environment conditions also include setting the heat dissipation structure, water flow, initial temperature, and the thermal resistance model of different heat dissipation structures, different water flows, and different initial reference temperatures, and the internal thermal resistance parameters (R_th-jf) are also different.

[0130] Specifically, taking the PinFin heat dissipation structure as an example, the common types of PinFin structure currently include circular, elliptical, rhombic, drop-shaped, labyrinth-shaped, combined-shaped, etc. In the case of the same water flow and the same initial temperature, the thermal resistance parameters in the thermal resistance model corresponding to different types of heat dissipation structures are different.

[0131] Taking the different water flow as an example, the increase of water flow generally provides heat exchange efficiency. The greater the water flow, the more heat is taken away per unit time, thereby reducing the thermal resistance. Therefore, in the case of the same heat dissipation structure and the same initial temperature, the thermal resistance parameters in the thermal resistance model corresponding to different water flows are different.

[0132] Taking the different initial temperature as an example, the initial temperature is positively correlated with the thermal resistance. In the case of the same heat dissipation structure and the same water flow, the higher the initial temperature, the higher the corresponding thermal resistance. Therefore, the thermal resistance parameters in the thermal resistance model corresponding to different initial temperatures are different.

[0133] After determining the thermal resistance parameters of the thermal resistance model according to the heat dissipation structure, the water flow, and the initial temperature, the power loss simulation value P_loss is input, and the power loss simulation value is multiplied by the thermal resistance parameter R_th-jf determined inside the thermal resistance model to calculate the temperature rise simulation value. The calculation formula of the temperature rise simulation value is:

[0134] ΔT = P_loss x (R_th-jf) (7);

[0135] Wherein, ΔT represents the temperature rise simulation value.

[0136] Exemplarily, referring to Figure 5 , the output end U_H_P_loss of the pure loss model of the U-phase upper bridge, the output end U_L_P_loss of the pure loss model of the U-phase lower bridge, the output end V_H_P_loss of the pure loss model of the V-phase upper bridge, the output end V_L_P_loss of the pure loss model of the V-phase lower bridge, the output end W_H_P_loss of the pure loss model of the W-phase upper bridge, and the output end W_L_P_loss of the pure loss model of the W-phase lower bridge are connected with the first input end input1, the second input end input2, the third input end input3, the fourth input end input4, the fifth input end input5, and the sixth input end input6 of the thermal resistance model, respectively, so as to input the power loss simulation value calculated by each pure loss model into the thermal resistance model, call the thermal resistance parameter corresponding to the simulation environment condition, and output the calculated temperature rise simulation value through the first output end output01, the second output end output02, the third output end output03, the fourth output end output04, the fifth output end output05, and the sixth output end output06.

[0137] The embodiment directly uses a thermal resistance model after outputting a power loss simulation value by a pure loss model, so that simulation speed is greatly improved.

[0138] Next, the scheme of the embodiment of the application is described in detail in combination with specific application examples.

[0139] The embodiment of the application takes a silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET) as an example, first measures a transfer characteristic curve, an output characteristic curve and switching loss data. Then, a suitable equation is selected to complete pure loss model modeling. Then, a thermal resistance model is constructed according to the relationship between power loss and temperature rise, and the power loss is provided by the pure loss model after three-phase inversion, and the loss outputs temperature rise information through the thermal resistance model.

[0140] Specifically, the transfer characteristic curve (Id-Vgs) of the SiC MOSFET is measured at multiple junction temperature points (such as 25°C, 150°C and 175°C), the Vgs test interval is -10-20V, and the Vds test interval is 5-50V.

[0141] The output characteristic curve (Id-Vds) of the SiC MOSFET is measured at multiple junction temperature points (such as 25°C, 150°C and 175°C) and multiple Vgs points (slightly higher than the threshold voltage Vth, such as 10V, 15V and 20V). The Vds test interval is 0-5V, 5-50V and 50-800V, and the Vgs test interval is 0-20V.

[0142] The test is performed at different bus voltages (such as 400V, 600V and 800V), different load currents (Id), different junction temperatures (such as 25°C, 100°C, 150°C and 175°C) and different gate resistances (Rg, using the typical value of the target driver). The SiC MOSFET tube is tested by double pulse, and the (Eon, Eoff) measured data is obtained.

[0143] According to the measured data of the SiC MOSFET, the measured data is fitted by using formula (6) to obtain a current model, and the output of the current model is fitted with the drain-source voltage Vds to obtain a conduction loss model P_cond.

[0144] When fitting the conduction loss, the Eon and Eoff of the measured data and the switching loss are fitted according to the switching frequency f_sw to obtain a switching loss model P_sw.

[0145] Finally, the conduction loss model and the switching loss model are integrated to obtain a pure loss model P_loss.

[0146] A thermal resistance parameter library of different heat dissipation structures is preset, and a thermal resistance model is constructed, which has different thermal resistance models according to PinFin structures, water flow rates, and initial reference temperatures.

[0147] After obtaining the pure loss model and the thermal resistance model, a three-phase inverter circuit integrated with the pure loss model and the thermal resistance model is built for simulation testing. The power loss simulation value is calculated by using the pure loss model and is input into the thermal resistance model to obtain the corresponding temperature rise. The water flow rate is 8 L / min and the initial temperature is 65℃, a unit step power (i.e. the power loss simulation value calculated by the pure loss model, such as 125 W) is applied to each chip, the thermal response curve ΔT_j(t) from the junction to the fluid is extracted, and the thermal resistance (R_th-jf) is obtained. The thermal resistance model calculates the temperature rise simulation value corresponding to the power loss by using the input power loss and the thermal resistance parameters in the model. After the simulation is completed, the temperature rise simulation value output by the thermal resistance model is read as the test result.

[0148] The simulation method can improve the accuracy of the loss and temperature rise data obtained by three-phase inverter simulation, and reduce the possibility of module deviation from the design value.

[0149] Optionally, the power loss simulation value output by the pure loss model is used as an intermediate quantity and also as part of the output result data.

[0150] In summary, the application provides a three-phase inverter simulation method for a power module and related equipment. The method includes obtaining measured data of the transfer characteristic curve, the output characteristic curve, the turn-on loss, and the turn-off loss of the power semiconductor; fitting the relationship between the electrical parameters and the power loss of the power semiconductor according to the measured data to obtain a pure loss model, wherein the electrical parameters include the junction temperature, the drain-source voltage, the gate-source voltage, and the switching frequency. The pure loss model is established by using the measured device characteristic curve and the switching loss data, and the input is the electrical parameter and the output is the loss power. A three-phase inverter circuit is built according to the pure loss model, and electrical simulation parameters are obtained by running the three-phase inverter circuit. The power loss simulation value is obtained by inputting the electrical simulation parameters into the pure loss model for power loss simulation processing. The temperature rise simulation value is obtained by inputting the power loss simulation value into the preset thermal resistance model for temperature rise simulation processing. The simulation of the three-phase inverter is performed by using the modeling method based on the pure loss model to replace the actual test of the physical sample, which can improve the simulation accuracy of the three-phase inverter, greatly reduce the simulation time, shorten the development cycle of the power module, reduce the cost investment, and improve the accuracy and safety of the test.

[0151] Reference Figure 6 The application also provides a three-phase inverter simulation system for a power module, which can implement the above method. The system includes:

[0152] The measured data collection module is configured to collect measured data of the transfer characteristic curve, the output characteristic curve, the turn-on loss and the turn-off loss of the power semiconductor.

[0153] The data fitting module is configured to perform data fitting on the relationship between the electrical parameters and the power loss of the power semiconductor according to the measured data, to obtain a pure loss model, wherein the electrical parameters include the junction temperature, the drain-source voltage, the gate-source voltage and the switching frequency.

[0154] The circuit simulation module is configured to build a three-phase inverter circuit according to the pure loss model, and to obtain electrical simulation parameters by running the three-phase inverter circuit.

[0155] The power loss simulation module is configured to input the electrical simulation parameters into the pure loss model for power loss simulation processing, to obtain a power loss simulation value.

[0156] The temperature rise simulation module is configured to input the power loss simulation value into a preset thermal resistance model for temperature rise simulation processing, to obtain a temperature rise simulation value, wherein the thermal resistance model pre-stores thermal resistance parameters of different heat dissipation structures.

[0157] It can be understood that the content in the above method embodiments is applicable to the present system embodiments, the present system embodiments specifically implement the same functions as the above method embodiments, and achieve the same beneficial effects as the above method embodiments.

[0158] The present application also provides an electronic device, which includes a memory and a processor, the memory stores a computer program, and the processor implements the above method when executing the computer program. The electronic device can be any intelligent terminal, such as a tablet computer or a vehicle-mounted computer.

[0159] It can be understood that the content in the above method embodiments is applicable to the present device embodiments, the present device embodiments specifically implement the same functions as the above method embodiments, and achieve the same beneficial effects as the above method embodiments.

[0160] Reference is made to Figure 7 , Figure 7 The hardware structure of the electronic device of another embodiment is illustrated, which includes:

[0161] The processor 901 can be implemented in a general-purpose CPU (Central Processing Unit), a microprocessor, an ASIC (Application Specific Integrated Circuit), or one or more integrated circuits, and is configured to execute related programs to implement the technical solutions provided by the present application.

[0162] The memory 902 can be implemented in the form of Read Only Memory (ROM), static storage device, dynamic storage device, or Random Access Memory (RAM), etc. The memory 902 can store an operating system and other application programs, and when the technical solutions provided by the embodiments of the present specification are implemented by software or firmware, the related program codes are stored in the memory 902 and are called and executed by the processor 901 to perform the above-mentioned method of the embodiments of the present application.

[0163] The input / output interface 903 is configured to realize information input and output.

[0164] The communication interface 904 is configured to realize the communication interaction between the device and other devices, and the communication can be realized by wired mode (for example, USB, network cable, etc.) or wireless mode (for example, mobile network, WIFI, Bluetooth, etc.).

[0165] The bus 905 is configured to transmit information between various components (for example, the processor 901, the memory 902, the input / output interface 903, and the communication interface 904) of the device.

[0166] The processor 901, the memory 902, the input / output interface 903, and the communication interface 904 are connected to each other through the bus 905 to realize the communication connection between the device.

[0167] The embodiments of the present application also provide a computer readable storage medium, which stores a computer program. The computer program is executed by a processor to realize the above-mentioned method.

[0168] It can be understood that the contents in the above-mentioned method embodiments are all applicable to the present storage medium embodiments, the functions specifically realized by the present storage medium embodiments are the same as those of the above-mentioned method embodiments, and the beneficial effects achieved by the present storage medium embodiments are also the same as those achieved by the above-mentioned method embodiments.

[0169] The embodiments of the present application also provide a computer program product, which includes a computer program. The computer program is executed by a processor to realize the above-mentioned method.

[0170] It can be understood that the contents in the above-mentioned method embodiments are all applicable to the present program product embodiments, the functions specifically realized by the present program product embodiments are the same as those of the above-mentioned method embodiments, and the beneficial effects achieved by the present program product embodiments are also the same as those achieved by the above-mentioned method embodiments.

[0171] Memory, as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs and non-transitory computer-executable programs. In addition, the memory can include a high-speed random access memory and can also include a non-transitory memory, such as at least one magnetic disk storage device, a flash memory device, or other non-transitory solid-state memory device. In some embodiments, the memory can optionally include a memory disposed remotely from the processor, which can be connected to the processor through a network. Examples of the above network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0172] The embodiments described in the embodiments of the present application are used to more clearly illustrate the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided by the embodiments of the present application. Those skilled in the art can know that, with the evolution of technology and the appearance of new application scenarios, the technical solutions provided by the embodiments of the present application are also applicable to similar technical problems.

[0173] Those skilled in the art can understand that the technical solutions shown in the figures do not constitute a limitation on the embodiments of the present application, and can include more or fewer steps than shown in the figures, or combine certain steps, or different steps.

[0174] The system embodiments described above are only schematic, and the units described as separate components can or can not be physically separate, that is, can be located in one place, or can be distributed on multiple network units. Part or all of the modules can be selected according to actual needs to achieve the purpose of the embodiments of the present application.

[0175] Those skilled in the art can understand that all or some of the steps in the above disclosed method, the functional modules / units in the system, and the device can be implemented as software, firmware, hardware, and appropriate combinations thereof.

[0176] The terms "first", "second", "third", "fourth" and the like used in the description of the present application and the above-described drawings (if any) are used to distinguish similar objects, and do not necessarily have to describe a particular order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0177] It should be understood that, in the application, "at least one" refers to one or more, and "multiple" refers to two or more. "And / or" is used to describe the association relationship of the associated objects, which means that there can be three relationships, for example, "A and / or B" can represent three cases of only A, only B and A and B existing at the same time, wherein A and B can be singular or plural. The character " / " generally represents an "or" relationship between the front and rear associated objects. "At least one of the following" or the like means any combination of these items, including any combination of single or multiple items. For example, at least one of a, b or c can represent a, b, c, "a and b", "a and c", "b and c", or "a and b and c", wherein a, b and c can be single or multiple.

[0178] In several embodiments provided in the application, it should be understood that the disclosed system and method can be implemented in other ways. For example, the system embodiments described above are only illustrative, for example, the division of the above units is only a logical function division, and actual implementation can have another division mode, for example, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the displayed or discussed each other can be through some interface, indirect coupling or communication connection between systems or units, which can be electrical, mechanical or other forms.

[0179] The units described above as separate components can or can not be physically separated, and the components shown as units can or can not be physical units, that is, they can be located in one place, or they can be distributed on multiple network units. Part or all of the units can be selected according to actual needs to achieve the purpose of the embodiment.

[0180] In addition, each functional unit in each embodiment of the application can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit. The integrated unit can be realized in the form of hardware or in the form of software functional unit.

[0181] The integrated unit, if implemented in the form of a software function unit and sold or used as an independent product, can be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application, essentially or in other words, the part that contributes to the prior art or the whole or part of the technical solutions can be embodied in the form of a software product. The computer software product is stored in a storage medium, and includes multiple instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods of the various embodiments of the present application. The aforementioned storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, and various program storage media.

[0182] The preferred embodiments of the embodiments of the present application are described above with reference to the accompanying drawings, and are not limited to the scope of the embodiments of the present application. Any modifications, equivalent replacements and improvements made by those skilled in the art without departing from the scope and essence of the embodiments of the present application shall be within the scope of the embodiments of the present application.

Claims

1. A method of simulating a three-phase inverter of a power module, characterized by, The method comprises the following steps: Obtaining measured data of the transfer characteristic curve, the output characteristic curve, the turn-on loss and the turn-off loss of the power semiconductor; According to the measured data, the relationship between the electrical parameters of the power semiconductor and the power loss is data-fitted to obtain a pure loss model, wherein the electrical parameters include junction temperature, drain-source voltage, gate-source voltage and switching frequency; According to the pure loss model, a three-phase inverter circuit is built, and electrical simulation parameters are obtained by running the three-phase inverter circuit; The electrical simulation parameters are input into the pure loss model for power loss simulation processing to obtain a power loss simulation value; The power loss simulation value is input into a preset thermal resistance model for temperature rise simulation processing to obtain a temperature rise simulation value, wherein the thermal resistance model has pre-stored thermal resistance parameters of different heat dissipation structures; According to the measured data, the relationship between the electrical parameters of the power semiconductor and the power loss is data-fitted to obtain a pure loss model, comprising the following steps: According to the measured data, the relationship between the junction temperature, the drain-source voltage, the gate-source voltage and the drain current is multivariate nonlinearly fitted to obtain a current model; According to the current model and the drain-source voltage, the conduction loss is fitted to obtain a conduction loss model; According to the turn-on loss, the turn-off loss and the switching frequency, the switching loss is fitted to obtain a switching loss model; According to the conduction loss model and the switching loss model, the power loss is fitted to obtain a pure loss model; According to the measured data, the relationship between the junction temperature, the drain-source voltage, the gate-source voltage and the drain current is multivariate nonlinearly fitted to obtain a current model, comprising the following steps: Polynomial regression analysis is performed on the junction temperature, the drain-source voltage and the gate-source voltage as independent variables and the drain current as a dependent variable to obtain a multivariate nonlinear equation, wherein the multivariate nonlinear equation includes a first nonlinear term of the junction temperature and the gate-source voltage, a second nonlinear term of the junction temperature and the drain-source voltage, a first linear term of the gate-source voltage and a second linear term of the drain-source voltage; According to the measured data, the to-be-fitted parameters of the multivariate nonlinear equation are optimized to minimize the error to obtain optimal parameter values; According to the multivariate nonlinear equation and the optimal parameter values, a current model is obtained; According to the pure loss model, a three-phase inverter circuit is built, and electrical simulation parameters are obtained by running the three-phase inverter circuit, comprising the following steps: The power semiconductors in each bridge arm of the three-phase inverter circuit are replaced by the pure loss model, and the three-phase inverter circuit is run based on preset simulation environment conditions to obtain electrical simulation parameters.

2. The method of claim 1, wherein, The measured data of the transfer characteristic curve, the output characteristic curve, the turn-on loss and the turn-off loss of the power semiconductor comprises the following steps: The transfer characteristic curve of the drain current of the power semiconductor with respect to the gate-source voltage is measured at different temperatures and different drain-source voltages to obtain first characteristic data; The output characteristic curve of the drain current of the power semiconductor with respect to the drain-source voltage is measured at different temperatures and different gate-source voltages to obtain second characteristic data; The third characteristic data is obtained by measuring the turn-on loss and turn-off loss of the power semiconductor under different bus voltages, different load currents, different junction temperatures, and different gate resistances through double-pulse testing. The first characteristic data, the second characteristic data, and the third characteristic data are integrated to obtain measured data.

3. The method of claim 1, wherein, The simulation value of the temperature rise is obtained by inputting the simulation value of the power loss into a preset thermal resistance model for temperature rise simulation processing, and the simulation value of the temperature rise is obtained. The thermal resistance parameters of the thermal resistance model are determined according to the simulation environment conditions. The simulation value of the temperature rise is calculated according to the simulation value of the power loss and the thermal resistance parameters.

4. A three-phase inverter simulation system of a power module, characterized by, The system comprises: A measured data acquisition module is configured to acquire measured data of a transfer characteristic curve, an output characteristic curve, a turn-on loss, and a turn-off loss of a power semiconductor. A data fitting module is configured to perform data fitting on a relationship between electrical parameters and power loss of the power semiconductor according to the measured data, to obtain a pure loss model, wherein the electrical parameters include a junction temperature, a drain-source voltage, a gate-source voltage, and a switching frequency. A circuit simulation module is configured to build a three-phase inverter circuit according to the pure loss model, and to obtain electrical simulation parameters by running the three-phase inverter circuit. A power loss simulation module is configured to input the electrical simulation parameters into the pure loss model for power loss simulation processing, to obtain a simulation value of the power loss. A temperature rise simulation module is configured to input the simulation value of the power loss into a preset thermal resistance model for temperature rise simulation processing, to obtain a simulation value of the temperature rise, wherein the thermal resistance model has pre-stored thermal resistance parameters of different heat dissipation structures. The data fitting on the relationship between the electrical parameters and the power loss of the power semiconductor according to the measured data to obtain the pure loss model comprises the following steps: A multivariate nonlinear fitting is performed on a relationship between a junction temperature, a drain-source voltage, a gate-source voltage, and a drain current according to the measured data, to obtain a current model. A conduction loss model is obtained by conduction loss fitting according to the current model and the drain-source voltage. A switching loss model is obtained by switching loss fitting according to the turn-on loss, the turn-off loss, and a switching frequency. A power loss fitting is performed according to the conduction loss model and the switching loss model, to obtain the pure loss model. The multivariate nonlinear fitting on the relationship between the junction temperature, the drain-source voltage, the gate-source voltage, and the drain current according to the measured data to obtain the current model comprises the following steps: A polynomial regression analysis is performed on the junction temperature, the drain-source voltage, and the gate-source voltage as independent variables and the drain current as a dependent variable, to obtain a multivariate nonlinear equation, wherein the multivariate nonlinear equation comprises a first nonlinear term of the junction temperature and the gate-source voltage, a second nonlinear term of the junction temperature and the drain-source voltage, a first linear term of the gate-source voltage, and a second linear term of the drain-source voltage. Optimization is performed on to-be-fitted parameters of the multivariate nonlinear equation according to the measured data to minimize errors, to obtain optimal parameter values. The current model is obtained according to the multivariate nonlinear equation and the optimal parameter values. The three-phase inverter circuit is built according to the pure loss model, and the electrical simulation parameters are obtained by running the three-phase inverter circuit, which comprises the following steps: The power semiconductors of each bridge arm in a three-phase inverter circuit are replaced with the pure loss model, and electrical simulation parameters are obtained by running the three-phase inverter circuit based on preset simulation environment conditions.

5. An electronic device, comprising: The electronic device includes a memory and a processor, the memory stores a computer program, and the processor implements the method of any one of claims 1 to 3 when executing the computer program.

6. A computer-readable storage medium storing a computer program, the computer program comprising instructions that, when executed by a computer, cause the computer to perform the method of any one of claims 1 to 5. The computer program is executed by the processor to implement the method of any one of claims 1 to 3.

7. A computer program product comprising a computer program, characterized in that, The computer program is executed by the processor to implement the method of any one of claims 1 to 3. The computer program is executed by the processor to implement the method of any one of claims 1 to 3.

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