Fuse link for protecting semiconductor equipment and manufacturing method

Abstract

The invention relates to the field of protective electric appliances, and discloses a fuse link for protecting semiconductor equipment, which comprises a fusion tube, a fuse body and a contact plate, the fuse body is fixed in the fusion tube through a connecting piece, a supporting piece is omitted, a structure without the supporting piece is adopted, the size of the fuse link is reduced, and the installation efficiency of the fuse link is improved; the intersection of the side walls of the fusion tube is provided with an arc transition surface, thereby preventing the fusion tube from bursting caused by pressure concentration, and improving the operation safety of the fuse link. During working, the contact plate can be connected with a power supply and a load element, and in a circuit with rated voltage of 1500V, when faults such as short circuit occur, the maximum current capable of being safely cut off is 50kA, and the full breaking time is less than or equal to 8ms; the fuse link passes a 20kV withstand voltage test, and the contact resistance change rate of the fuse link after 2000 times of thermal cycles is 1t; 3%. The fuse link is low in price, and the use cost is reduced. The invention also provides a manufacturing method of the fuse link for protecting the semiconductor equipment.

Description

Technical Field

[0001] This invention relates to the field of electrical protection technology, and in particular to a fuse for protecting semiconductor devices and a method for manufacturing it. Background Technology

[0002] A fuse is an overcurrent protection device that operates based on the principle of current heating. Its core component is the fusible element. When an overload or short-circuit fault occurs in a circuit, and the current exceeds a specified value, the fusible element itself will rapidly melt due to the heat generated by the current, thereby cutting off the circuit and preventing the fault current from damaging other equipment in the circuit. It plays a role in protecting the circuit and the safety of electrical equipment. It is widely used in power systems, industrial equipment, rail transportation, and household appliances.

[0003] In the rail transit sector, with the continuous increase in rectifier power to the 4000kW level, the demand for high-current fuses with rated currents of 1000A and above is becoming increasingly urgent. However, existing high-current fuses have long relied on imports, leading to high procurement costs and numerous problems in practical applications: a significant risk of localized bursting, potentially causing secondary damage to surrounding equipment; complex installation processes that increase construction difficulty and extend equipment commissioning cycles; and a noticeable lag in fault signal feedback, making it difficult to trigger protection mechanisms in a timely manner and affecting the overall system's safety response efficiency. Meanwhile, the development of medium-voltage, high-capacity fuse technology remains lagging, with product performance indicators failing to meet the stringent requirements of semiconductor equipment for protection accuracy and response speed, thus hindering the development of related equipment.

[0004] Existing fuses also face technical bottlenecks in terms of structure and performance: the structural design with support components inevitably increases the product size while meeting mechanical strength requirements, occupying more installation space and increasing the number of potential failure points due to failure of the support component connection; the pressure resistance of the fuse tube is unevenly distributed under high-pressure working conditions, and local weak areas are prone to bursting due to pressure concentration, seriously threatening the safe operation of the equipment; the arc extinguishing efficiency is low, making it impossible to meet the short-circuit protection requirements of high-power equipment, making it difficult to quickly cut off the circuit when a fault occurs, which may lead to the expansion of the fault range and fail to fully guarantee the safe and stable operation of the entire rail transit power supply system.

[0005] Therefore, how to change the current situation where high-current fuses are large in size and have poor operational safety has become an urgent problem to be solved by those skilled in the art. Summary of the Invention

[0006] The purpose of this invention is to provide a fuse for protecting semiconductor devices and a manufacturing method thereof, so as to solve the problems existing in the above-mentioned related technologies, reduce the size of the fuse for protecting high-current semiconductor devices, improve the operational safety of the fuse for protecting semiconductor devices, and enhance the operational stability of semiconductor devices.

[0007] To achieve the above objectives, the present invention provides the following solution:

[0008] This invention provides a fuse for protecting semiconductor devices, comprising:

[0009] The melting tube has an arc transition surface at the intersection of its side walls; connecting plates are provided at both axial ends of the melting tube.

[0010] The melt is disposed inside the melt tube and fixed between the two connecting plates; the cavity formed by the melt tube and the connecting plates is also filled with arc-extinguishing material.

[0011] A contact plate is connected to the side of the connecting plate away from the melt, and the two correspond one to one. One of the connecting plates can be connected to a power source, and the other connecting plate can be connected to a load element.

[0012] Preferably, the wall thickness of the fusion tube is not less than 3 mm.

[0013] Preferably, the inner cavity of the fusion tube is a cylindrical cavity;

[0014] The arc-extinguishing material is quartz sand.

[0015] Preferably, the fusion tube is detachably connected to the connecting plate;

[0016] The melt is welded to the connecting plate;

[0017] The contact plate is welded to the connecting plate and fixed with screws.

[0018] Preferably, the outline of the contact plate is formed by an arc.

[0019] Preferably, the contact plate has a threaded hole that can be connected to a busbar so that the contact plate can be connected to a power source.

[0020] Preferably, the fuse for protecting semiconductor devices further includes a striker mechanism, which can be linked with a micro switch to achieve fault signal conversion.

[0021] Preferably, the striking pin mechanism includes a constantan wire, a spring, and a pin. When the molten metal melts, the constantan wire can be melted. When the constantan wire does not melt, the spring is in a compressed state and is connected to the pin. When the constantan wire melts, the pin moves and triggers the micro switch under the force of the spring restoring its elastic deformation.

[0022] The present invention also provides a method for manufacturing the above-mentioned fuse for semiconductor device protection, characterized by comprising the following steps:

[0023] Connect the contact plate to the connecting plate;

[0024] Connect the melt to the connecting plate;

[0025] The arc-extinguishing material is filled into the cavity formed by the connecting plate and the fusion tube and then cured.

[0026] The present invention achieves the following technical effects compared with related technologies: The semiconductor device protection fuse of the present invention includes a fuse tube, a fusible element and a contact plate. The side walls of the fuse tube have an arc transition surface at their intersection. Connecting plates are provided at both ends of the axial direction of the fuse tube. The fusible element is disposed inside the fuse tube and fixed between the two connecting plates. The cavity formed by the fuse tube and the connecting plates is also filled with an arc-extinguishing material. The contact plate and the connecting plate are connected on the side away from the fusible element and correspond one-to-one. One connecting plate can be connected to a power supply and the other connecting plate can be connected to a load element.

[0027] The present invention relates to a fuse for semiconductor equipment protection. The fuse element is fixed within a fuse tube using a connector. Compared to existing high-current fuses, the present invention eliminates the support component, adopting a supportless structure, thus reducing the fuse's volume and improving installation efficiency. The fuse's fuse tube sidewalls intersect at a rounded transition surface, meaning the fuse tube uses a rounded cavity, preventing pressure concentration that could cause the fuse tube to burst, thereby improving operational safety. During operation, the contact plate can be connected to the power supply and load components. In a 1500V rated voltage circuit, when a short circuit or other fault occurs, the fuse of the present invention can safely interrupt a maximum current of 50kA with a total breaking time ≤8ms. Furthermore, the fuse of the present invention passes a 20kV withstand voltage test, and after 2000 thermal cycles, the contact resistance change rate is <3%. It should also be noted that the fuse of the present invention is inexpensive, significantly reducing operating costs compared to imported products, and is easy to maintain, contributing to improved production efficiency.

[0028] The present invention also provides a method for manufacturing the above-mentioned fuse for semiconductor device protection. Naturally, the method for manufacturing the fuse for semiconductor device protection of the present invention can achieve the above-mentioned beneficial effects. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of the present invention or related technologies, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This is a schematic diagram of the structure of a fuse for protecting semiconductor devices provided in an embodiment of the present invention;

[0031] Figure 2 This is a schematic diagram of the internal structure of a fuse for protecting semiconductor devices provided in an embodiment of the present invention;

[0032] Figure 3 This is a cross-sectional schematic diagram of a portion of the structure of a fuse for protecting semiconductor devices provided in an embodiment of the present invention;

[0033] In the diagram: 1. Furnace tube; 2. Furnace body; 3. Arc extinguishing material; 4. Contact plate; 5. Striking pin mechanism; 6. Connecting plate; 7. Constantan wire; 8. Spring; 9. Ejector pin; 10. Micro switch. Detailed Implementation

[0034] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0035] The purpose of this invention is to provide a fuse for protecting semiconductor devices and a manufacturing method thereof, so as to solve the problems existing in the above-mentioned related technologies, reduce the size of high current specification fuses, improve the operational safety of fuses, and enhance the operational stability of semiconductor devices.

[0036] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0037] Example 1

[0038] This embodiment provides a fuse for protecting semiconductor devices. Please refer to [reference needed]. Figures 1-3It includes a fusible tube 1, a fusible body 2, and a contact plate 4. The side walls of the fusible tube 1 have an arc transition surface at their intersection. Connecting plates 6 are provided at both ends of the axial direction of the fusible tube 1. The fusible body 2 is disposed inside the fusible tube 1 and fixed between the two connecting plates 6. The cavity formed by the fusible tube 1 and the connecting plates 6 is also filled with arc-extinguishing material 3. The contact plate 4 is connected to the side of the connecting plates 6 away from the fusible body 2, and the two correspond one to one. One connecting plate 6 can be connected to the power supply, and the other connecting plate 6 can be connected to the load element.

[0039] The fuse of this invention has a fuse element 2 fixed inside the fuse tube 1 using a connecting member. Compared to high-current fuses in the prior art, the fuse of this invention omits the support member, adopting a supportless structure, reducing the volume of the fuse and improving the installation efficiency. The fuse of this invention has a rounded transition surface at the intersection of the side walls of the fuse tube 1, i.e., the fuse tube 1 adopts a rounded cavity, avoiding pressure concentration that could cause the fuse tube 1 to burst, thus improving the operational safety of the fuse. The fuse element 2 is electrically connected to the contact plate 4. During operation, the contact plate 4 can be connected to the power supply and load components. In a circuit with a rated voltage of 1500V, when a short circuit or other fault occurs, the fuse of this invention can safely interrupt a maximum current of 50kA, with a total breaking time ≤8ms. Furthermore, the fuse of this invention passes a 20kV withstand voltage test, and after 2000 thermal cycles, the contact resistance change rate is <3%. It should also be noted that the fuse of the present invention is inexpensive, and its usage cost is greatly reduced compared with imported products, with a reduction of 60% in usage cost. Furthermore, it is easy to maintain, and maintenance time can be reduced by 70%, which helps to improve work efficiency.

[0040] It should be explained here that the fuse tube 1 of the fuse is made of insulating material, the fuse body 2 is made of conductive material, and the working principle of the fuse in the circuit are common knowledge to those skilled in the art, and will not be elaborated here.

[0041] In this specific embodiment, the wall thickness of the fuse tube 1 is not less than 3 mm. The fuse tube 1 of the present invention adopts a thicker wall structure, which can further improve the structural strength of the fuse tube 1 and enhance its resistance to bursting. Compared with the high current specification fuse in the prior art, the bursting strength of the fuse tube 1 is increased by about 40%.

[0042] In other specific embodiments of the present invention, the inner cavity of the fuse tube 1 is a cylindrical cavity, which effectively prevents stress concentration. In practical applications, the inner cavity of the fuse tube 1 can also be set as an elliptical cylinder, a prism with arc-shaped corners, or other structures to adapt to different specific working conditions and improve the flexibility and adaptability of the fuse body.

[0043] In this specific embodiment, the arc-extinguishing material 3 is quartz sand. Quartz sand has good thermal conductivity, which can quickly absorb the heat of the electric arc, extinguish the arc rapidly, and improve the arc-extinguishing efficiency. In this specific embodiment, the breaking capacity of the fuse reaches 50kA / 1500V. Moreover, quartz sand is readily available and has a low cost, which helps to further reduce the production cost of the fuse. In practical applications, other arc-extinguishing materials 3 can also be used to meet the usage requirements of different fuses.

[0044] Specifically, the fuse tube 1 and the connecting plate 6 can be connected in a detachable manner, such as by bolt connection, which is convenient for disassembly and assembly and helps to improve the convenience of maintenance and operation of the fuse.

[0045] In this specific embodiment, the melt 2 is welded to the connecting plate 6; the melt 2 is fixed between the two connecting plates 6 by spot welding, omitting the support component. Correspondingly, in this specific embodiment, the contact plate 4 is welded to the connecting plate 6 and fixed with screws, adopting a double fixing method to enhance the stability of the connection structure.

[0046] It should also be emphasized that the outline of the contact plate 4 is formed by an arc, that is, the contact plate 4 is rounded at the corners, and the sidewalls of the contact plate 4 in the thickness direction are all arc surfaces, which can effectively prevent sharp corner discharge and help improve the heat dissipation capacity of the fuse. The heat dissipation capacity of the contact plate 4 with the arc outline can be improved by 25% compared with the existing technology.

[0047] More specifically, the contact plate 4 has threaded holes that can be connected to the busbar, allowing the contact plate 4 to be connected to the power supply. The threaded holes in the contact plate 4 facilitate direct connection to the busbar and improve the ease of operation of the melt 2.

[0048] The semiconductor device protection fuse of the present invention also includes a striker mechanism 5, which can be linked with the micro switch 10 to realize fault signal conversion, thereby improving the fault signal response time of the fuse.

[0049] In this specific embodiment, the striking pin mechanism 5 is fixed to the connecting plate 6 via a slot. The striking pin mechanism 5 includes a constantan wire 7, a spring 8, and a pin 9. When the fusible element 2 melts, the constantan wire 7 can be melted; when the constantan wire 7 is not melted, the spring 8 is in a compressed state and is connected to the pin 9; when the constantan wire 7 melts, under the force of the spring 8 restoring its elastic deformation, the pin 9 moves and triggers the micro switch 10. After the constantan wire 7 melts, the spring 8 is released, and under the force of the spring 8 restoring its deformation, the pin 9 moves and triggers the micro switch 10, thus switching the contact state. The fault signal delay of the fusible element in this specific embodiment is <5ms.

[0050] The semiconductor device protection fuse of this invention achieves a 1500V / 50kA breaking capacity through an integrated design without support components, combined with a thick-walled equalizing fuse tube 1, a chamfered contact plate 4, and a flux-screw dual-bonding process. The striker mechanism 5 mechanically links to the micro switch 10, with a fault response delay of <5ms, solving the protection problem of high-power rectifier devices.

[0051] Example 2

[0052] The present invention also provides a method for manufacturing a fuse for semiconductor device protection according to Embodiment 1, characterized by comprising the following steps:

[0053] Connect the contact plate 4 to the connecting plate 6;

[0054] Connect the melt 2 to the connecting plate 6;

[0055] The arc-extinguishing material 3 is filled into the cavity formed by the connecting plate 6 and the fusion tube 1 and then cured.

[0056] In practical applications, the contact plate 4 and the connecting plate 6 can be pre-fixed after being coated with flux, and then dried and cured at 380°C to form a permanent weld. The fusion tube 1 is filled with quartz sand and arc extinguishing agent and then cured at high temperature.

[0057] Example 3

[0058] This embodiment provides a semiconductor device, including the fuse of Embodiment 1, which is electrically connected to a rectifier.

[0059] The semiconductor device in this embodiment can be a high-power semiconductor device such as an electric locomotive rectifier, and the fuse of this invention can meet the protection requirements of the semiconductor device.

[0060] Specific examples have been used to illustrate the principles and implementation methods of this invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of this invention. Furthermore, those skilled in the art will recognize that, based on the ideas of this invention, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this invention.

Claims

1. A fuse for protecting semiconductor devices, characterized in that, include: The melting tube has an arc transition surface at the intersection of its side walls; connecting plates are provided at both axial ends of the melting tube. The melt is disposed inside the melt tube and fixed between the two connecting plates; the cavity formed by the melt tube and the connecting plates is also filled with arc-extinguishing material. A contact plate is connected to the side of the connecting plate away from the melt, and the two correspond one to one. One of the connecting plates can be connected to a power source, and the other connecting plate can be connected to a load element.

2. The fuse for semiconductor device protection according to claim 1, characterized in that: The wall thickness of the fusion tube is not less than 3 mm.

3. The fuse for semiconductor device protection according to claim 1, characterized in that: The inner cavity of the fusion tube is a cylindrical cavity; The arc-extinguishing material is quartz sand.

4. The fuse for semiconductor device protection according to claim 1, characterized in that: The fusion tube is detachably connected to the connecting plate; The melt is welded to the connecting plate; The contact plate is welded to the connecting plate and fixed with screws.

5. The fuse for semiconductor device protection according to claim 1, characterized in that: The outline of the contact plate is formed by an arc.

6. The fuse for semiconductor device protection according to claim 1, characterized in that: The contact plate has threaded holes that can be connected to the busbar so that the contact plate can be connected to the power supply.

7. The fuse for semiconductor device protection according to claim 1, characterized in that: It also includes a striker mechanism, which can be linked with a micro switch to achieve fault signal conversion.

8. The fuse for protecting semiconductor devices according to claim 7, characterized in that: The striking pin mechanism includes a constantan wire, a spring, and a pin. When the molten metal melts, the constantan wire can be melted. When the constantan wire does not melt, the spring is in a compressed state and is connected to the pin. When the constantan wire melts, the pin moves and triggers the micro switch under the force of the spring restoring its elastic deformation.

9. A method for manufacturing a fuse for semiconductor device protection according to any one of claims 1-8, characterized in that, Includes the following steps: Connect the contact plate to the connecting plate; Connect the melt to the connecting plate; The arc-extinguishing material is filled into the cavity formed by the connecting plate and the fusion tube and then cured.

10. A semiconductor device, comprising a rectifier, characterized in that: It also includes a semiconductor device protection fuse as described in any one of claims 1-8, wherein the semiconductor device protection fuse is electrically connected to the rectifier.

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