Gas real-time detection wavelength tuning control system and method based on TDLAS (Tunable Diode Laser Absorption Spectroscopy) technology

Abstract

The invention discloses a gas real-time detection wavelength tuning control system and method based on a TDLAS technology, and relates to the technical field of wavelength tuning control, and the method comprises the following steps: collecting corresponding working temperature data and compensation current data of a semiconductor laser in a standard working state; performing reference extraction processing and temperature change extraction processing to obtain reference temperature change data; collecting temperature data of the semiconductor laser in actual work, and calculating a temperature change error in real time according to the reference temperature change data; adjusting and controlling a temperature control device of the semiconductor laser according to the temperature change error; the invention is used for solving the problem that the output wavelength of the laser cannot be stably and accurately controlled according to the characteristics of the temperature change rate while accurate and referable standard change parameters are obtained when the output wavelength of the laser is controlled by controlling the temperature in the existing wavelength tuning control technology.

Description

Technical Field

[0001] This invention relates to the field of wavelength tuning control technology, specifically to a real-time gas detection wavelength tuning control system and method based on TDLAS technology. Background Technology

[0002] Wavelength tuning control technology is a technique that adjusts the output wavelength of a light source to make it change continuously and stably within a specific range, and precisely controls the wavelength position and scanning characteristics. It is widely used in fields such as spectral analysis, optical communication, lidar, and gas detection. Its core objective is to achieve high-precision control of light wavelengths to meet the wavelength selectivity requirements of different application scenarios.

[0003] Existing wavelength tuning control techniques, when controlling the output wavelength of a laser by controlling temperature, often only focus on the current temperature value and ignore the temperature change rate characteristics. They adjust the power of temperature control only based on the current temperature error, without considering the rate of temperature change, which may result in significant lag when rapid wavelength tuning is required. Furthermore, uneven temperature change rates can cause transient wavelength drift in the laser, affecting detection accuracy. The temperature change rate also affects the laser's threshold current and output power; controlling only the temperature value can lead to increased power fluctuations during temperature adjustment, further increasing the error in the detection results. For example, patent application CN115275774A discloses a method for TDLAS applications... The proposed wavelength control method and system for semiconductor lasers fails to consider the rate of temperature change when controlling the wavelength, resulting in insufficient stability and accuracy. Furthermore, controlling the laser's output wavelength by temperature often requires obtaining reference standard parameters based on the actual application scenario. However, traditional methods for obtaining these standard parameters often contain noise, leading to insufficient accuracy and precision. Existing wavelength tuning control technologies, when controlling the laser's output wavelength by temperature, cannot obtain accurate reference standard parameters while simultaneously achieving stable and accurate control of the laser's output wavelength based on the characteristics of the temperature change rate. Summary of the Invention

[0004] This invention aims to at least partially solve one of the technical problems in the prior art. It involves collecting operating temperature data and compensation current data of a semiconductor laser under standard operating conditions; performing reference extraction processing and temperature change extraction processing to obtain reference temperature change data; collecting temperature data of the semiconductor laser during actual operation and calculating the temperature change error in real time based on the reference temperature change data; and adjusting and controlling the temperature control device of the semiconductor laser based on the temperature change error. This addresses the problem that existing wavelength tuning control technologies, when controlling the output wavelength of a laser by controlling temperature, cannot obtain accurate and referable standard change parameters while simultaneously and stably and accurately controlling the laser's output wavelength based on the characteristics of the temperature change rate.

[0005] To achieve the above objectives, in a first aspect, this application provides a gas real-time detection wavelength tuning control system based on TDLAS technology, including a standard acquisition module, a reference extraction module, a data acquisition module, and a tuning control module; The standard acquisition module is used to acquire the operating temperature data and compensation current data of the semiconductor laser under standard operating conditions. The reference extraction module includes a first processing unit and a second processing unit. The first processing unit is used to perform reference extraction processing on the operating temperature data and compensation current data, and the second processing unit is used to perform temperature change extraction processing to obtain reference temperature change data. The data acquisition module is used to collect temperature data of the semiconductor laser during actual operation and to calculate the temperature change difference in real time based on the reference temperature change data. The tuning control module adjusts and controls the temperature control device of the semiconductor laser based on the temperature difference.

[0006] Furthermore, the standard acquisition module is configured with a standard acquisition strategy, which includes: The output optical power required for real-time gas detection by a semiconductor laser is recorded as the standard output optical power. The range of laser wavelengths of the gas output from the semiconductor laser in real time is obtained and denoted as the standard output wavelength range; any output wavelength in the standard output wavelength range is denoted as the standard output wavelength; the minimum and maximum output wavelengths in the standard output wavelength range are denoted as the minimum standard wavelength EX and the maximum standard wavelength ED, respectively; the time period during which the laser wavelength output by the semiconductor laser changes from the minimum standard wavelength to the maximum standard wavelength is denoted as the standard change period. The standard operating state of a semiconductor laser is defined as the state in which the output wavelength is the standard output wavelength, the output optical power is the standard output optical power, and the variation period of the standard output wavelength range is the standard variation period.

[0007] Furthermore, standard acquisition strategies also include: The standard output wavelength range is evenly divided into k1 standard output wavelength intervals; k2 standard output wavelengths are evenly selected from each standard output wavelength interval and denoted as the first standard wavelength. With the semiconductor laser in standard operating condition, the operating temperature and compensation current are sequentially collected when the output laser wavelength is the first standard wavelength, and the collection time is recorded starting from the output laser wavelength EX; the collection is repeated multiple times to obtain the operating temperature data and compensation current data respectively.

[0008] Furthermore, the first processing unit is configured with a first processing strategy, which includes: For any first standard wavelength, denoted as the first output wavelength, the working temperature and compensation current magnitudes collected at different sampling times for the first output wavelength are arranged sequentially according to the corresponding sampling times and denoted as the working temperature sequence and compensation current sequence, respectively. The working temperature sequence and compensation current sequence are respectively subjected to reference extraction processing to obtain the standard working temperature and standard compensation current corresponding to the first output wavelength. Repeatedly acquire the standard operating temperature and standard compensation current corresponding to all first standard wavelengths to obtain standard temperature data and standard current data; The reference extraction process includes: arranging the working temperature sequence and the compensation current sequence in ascending order, and denoting them as the first temperature sequence and the first current sequence, respectively; calculating the mean and standard deviation of the k3 percentile to the k4 percentile of the first temperature sequence and the first current sequence, and denoting them as AP1, AB1, AP2 and AB2 in order, respectively, where k3 and k4 are the set percentiles; The data in the first temperature sequence and the first current sequence that do not belong to the corresponding normal range are marked as abnormal data. After completion, the second temperature sequence and the second current sequence are obtained. The normal range corresponding to the first temperature sequence is [AP1-k5*AB1, AP1+k5*AB1], and the normal range corresponding to the first current sequence is [AP2-k5*AB2, AP2+k5*AB2], where k5 is a set scaling factor. For any pair of working temperature and compensation current in the second temperature sequence and the second current sequence acquired in the same time, they are recorded as the first temperature and the first current in sequence. If there is abnormal data in the first temperature and the first current, the first temperature and the first current are removed, and all data in the second temperature sequence and the second current sequence are processed repeatedly to obtain the third temperature sequence and the third current sequence.

[0009] Furthermore, the reference extraction process also includes: The third temperature sequence and the third current sequence were normalized according to their data types using the min-max normalization method, and all data sizes were scaled to [0, 1]. Divide [0, 1] evenly into M small intervals, which are denoted as intervals 1-M in sequence; combine the M small intervals into M*M interval combinations, which are denoted as temperature-current combination intervals (i, j), where i and j represent interval i and interval j respectively; M is the number of intervals that are not set. The number of times the corresponding temperature data in the same acquisition in the third temperature sequence and the third current sequence is in interval i and the corresponding current data is in interval j is counted and denoted as the frequency count G(i,j). Repeatedly count the number of frequencies corresponding to all temperature-current combination intervals, and calculate the frequency probability corresponding to each frequency count according to the first formula, which is as follows: , where P(i,j) represents the frequency probability; All frequency probabilities are accumulated in descending order until the accumulated frequency probability reaches k6, at which point the accumulation stops. The data corresponding to all accumulated frequency probabilities in the third temperature sequence and the third current sequence are counted and denoted as the fourth temperature sequence and the fourth current sequence, respectively. For any data point in the fourth temperature sequence and the fourth current sequence, denoted as the first data point, calculate the data weight Q(v) corresponding to the first data point, Q(v) = P(v) / G(v), where P(v) represents the frequency probability corresponding to the first data point, and G(v) represents the number of frequencies corresponding to P(v). Repeatedly acquire the data weights corresponding to all data in the fourth temperature sequence and the fourth current sequence, and calculate the reference operating temperature and reference compensation current corresponding to the first output wavelength according to the second formula and the third formula respectively. The second formula is as follows: The third formula is as follows: Where BT(v) represents the reference operating voltage, BI(v) represents the reference compensation current, U represents the total number of data points in the fourth temperature sequence or the fourth current sequence, Tv represents the v-th data point in the fourth temperature sequence, and Iv represents the v-th data point in the fourth current sequence; and the reference acquisition time corresponding to the reference operating temperature and reference compensation current is calculated according to the fourth formula, which is as follows: Where CR(v) represents the corresponding reference acquisition time, and SR(v) represents the acquisition time corresponding to BT(v) and BI(v); Repeatedly acquire the reference operating temperature, reference compensation current, and corresponding reference acquisition time for all first standard wavelengths, and record them as reference temperature and current data.

[0010] Furthermore, the second processing unit is configured with a second processing strategy, which includes: Arrange the reference operating temperatures in the reference temperature and current data in ascending order according to the corresponding wavelength, and denote it as the first reference temperature sequence; arrange the reference acquisition times corresponding to each reference operating temperature in the first reference temperature sequence in the corresponding order, and denote it as the reference time sequence; denote any two adjacent reference operating temperatures in the first reference temperature sequence as the reference temperature interval. The rate of change of reference temperature for any reference temperature range in the first reference temperature sequence is calculated using the fifth formula; the fifth formula is as follows: After completion, reference temperature change data is obtained.

[0011] Furthermore, the data acquisition module is configured with a data acquisition strategy, which includes: During the actual operation of the semiconductor laser, the theoretical output wavelength of the semiconductor laser is acquired at the first time interval, and the actual operating temperature and actual compensation current of the semiconductor laser are collected at the same time. The acquisition time is recorded as the actual working data, where the first time interval is t1. The current actual operating temperature is recorded as the first actual temperature. The previous actual operating temperature corresponding to the first actual temperature is recorded as the second actual temperature. The actual temperature change rate SW of the first actual temperature is calculated based on the first actual temperature, the second actual temperature and the corresponding acquisition time. The theoretical output wavelengths corresponding to the first actual temperature and the second actual temperature are respectively denoted as the first theoretical wavelength LP1 and the second theoretical wavelength LP2; the wavelength ranges contained in LP1 and LP2 are denoted as the actual variation ranges.

[0012] Furthermore, data acquisition strategies also include: Obtain the reference temperature range corresponding to the first standard wavelength included in the actual change range, denoted as the included reference range; based on the proportion of the first standard wavelength corresponding to the included reference range to the actual change range, calculate the weighted average of the reference temperature change rate corresponding to the included reference range to obtain the theoretical temperature change rate LW of the first actual temperature. The temperature change error YW is calculated based on the theoretical temperature change rate LW and the actual temperature change rate SW, where YW = |LW - SW|.

[0013] Furthermore, the tuning control module is configured with a tuning control strategy, which includes: Arrange the reference temperature change data in ascending order, denoted as the temperature change sequence. Obtain the minimum and maximum values of the temperature change sequence, denoted as WX and WD respectively in sequence. Divide [WX, WD] evenly into k7 change sub-intervals, and count the temperature change sequences included in each change sub-interval, where k7 is the set number of intervals; Obtain the reference temperature change rate corresponding to the reference interval included in the actual change interval, denoted as the included temperature change rate. Denote the change sub-interval with the most included temperature change rates as the reference change sub-interval, and obtain the range of the reference temperature change rate within the reference change sub-interval, denoted as the reference range CE; Denote k8*CE as the first change threshold AY1, and denote k9*CE as the second change threshold AY2; where k8 and k9 are set proportionality coefficients, and k9 > k8; If YW < AY1, then do not adjust the temperature control device; if AY1 ≤ YW < AY2, then slightly adjust the power of the temperature control device; if AY2 ≤ YW, then greatly adjust the power of the temperature control device.

[0014] In a second aspect, the present application provides a wavelength tuning control method for real-time gas detection based on TDLAS technology, including the following steps: Collect the working temperature data and compensation current data corresponding to the semiconductor laser under the standard working state; Perform reference extraction processing on the working temperature data and compensation current data, and perform temperature change extraction processing to obtain reference temperature change data; Collect the temperature data of the semiconductor laser during actual operation, and calculate the temperature change error in real time according to the reference temperature change data; Adjust and control the temperature control device of the semiconductor laser according to the temperature change error.

[0015] Advantages of the present invention: The present invention collects the working temperature data and compensation current data corresponding to the semiconductor laser under the standard working state; performs reference extraction processing on the working temperature data and compensation current data, and performs temperature change extraction processing to obtain reference temperature change data; collects the temperature data of the semiconductor laser during actual operation, and calculates the temperature change error in real time according to the reference temperature change data; adjusts and controls the temperature control device of the semiconductor laser according to the temperature change error; when controlling the output wavelength of the laser by controlling the temperature, it is possible to obtain accurate and referenceable standard change parameters, and at the same time, according to the characteristics of the temperature change rate, stably and accurately control the output wavelength of the laser; This invention employs multi-stage data cleaning and statistical analysis through reference extraction processing. This process removes noise from temperature and current data, effectively eliminates interference from abnormal data, ensures the accuracy of reference temperature and compensation current, and improves the reliability of reference temperature and current data. Based on a wavelength interval division and weighted averaging mechanism, the temperature range corresponding to the output wavelength range is uniformly divided into multiple intervals. The reference temperature change rate is independently calculated for each interval, and a weighted average is performed according to the proportion corresponding to the actual change interval. This real-time matching of the theoretical temperature change rate of the laser's current operating wavelength adapts to the temperature control requirements under different wavelengths. By adjusting the temperature control device through temperature change errors, transient wavelength drift of the laser caused by uneven temperature change rates can be avoided, improving the robustness of wavelength control and making the detection results more accurate. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the system of the present invention; Figure 2 This is a flowchart of the steps of the method of the present invention; Figure 3 This is a flowchart of the data acquisition strategy of the present invention; Figure 4 This is a flowchart of the tuning control strategy of the present invention; Figure 5 This is a schematic diagram of the electronic device of the present invention. Detailed Implementation

[0017] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] Example 1, please refer to Figure 1 As shown, this application provides a gas real-time detection wavelength tuning control system based on TDLAS technology, including a standard acquisition module, a reference extraction module, a data acquisition module, and a tuning control module; The standard acquisition module is used to acquire the operating temperature data and compensation current data of the semiconductor laser under standard operating conditions. The standard acquisition module is configured with a standard acquisition strategy, which includes: acquiring the output optical power required for real-time gas detection by the semiconductor laser, denoted as the standard output optical power; the standard output optical power is the reference power value for stable laser operation and directly affects the signal-to-noise ratio of the detection signal; if the power is too low, the gas absorption signal will be weak; if the power is too high, it may cause nonlinear distortion of the laser. Obtain the laser wavelength range of the semiconductor laser for real-time gas detection, denoted as the standard output wavelength range; determine the wavelength range that the laser needs to cover, which is the target range for subsequent wavelength tuning; for example, when detecting CO2, it is necessary to cover its absorption line near 1572nm. Any output wavelength within the standard output wavelength range is denoted as the standard output wavelength; the minimum and maximum output wavelengths within the standard output wavelength range are denoted as the minimum standard wavelength EX and the maximum standard wavelength ED, respectively; the time period during which the laser wavelength output by the semiconductor laser changes from the minimum standard wavelength to the maximum standard wavelength is denoted as the standard change period. The standard operating state of a semiconductor laser is defined as the state in which the output wavelength is the standard output wavelength, the output optical power is the standard output optical power, and the variation period of the standard output wavelength range is the standard variation period; this ensures that subsequent data acquisition comes from a stable and repeatable operating point. The standard output wavelength range is evenly divided into k1 standard output wavelength intervals; k2 standard output wavelengths are evenly selected from each standard output wavelength interval and denoted as the first standard wavelength; k1 and k2 can be set according to specific application scenarios. Under standard operating conditions, the operating temperature and compensation current of the semiconductor laser are sequentially collected when the output laser wavelength is the first standard wavelength. The collection time is recorded starting from the output laser wavelength EX. The collection is repeated multiple times to obtain the operating temperature data and compensation current data. Multiple collections can reflect the repeatability of the laser under the same conditions and ensure the reliability of the data. In the specific implementation process, multi-dimensional data of the laser under standard conditions were systematically acquired, providing a solid foundation for subsequent reference value calculation and temperature change rate modeling; these data are the original basis for subsequent tuning control and fundamentally determine the accuracy and stability of wavelength tuning control.

[0019] The reference extraction module includes a first processing unit and a second processing unit. The first processing unit is used to perform reference extraction processing on the operating temperature data and compensation current data, and the second processing unit is used to perform temperature change extraction processing to obtain reference temperature change data. The first processing unit is configured with a first processing strategy, which includes: for any first standard wavelength, denoted as the first output wavelength, the working temperature and compensation current magnitude collected at different sampling times for the first output wavelength are arranged in order according to the corresponding sampling times and denoted as the working temperature sequence and the compensation current sequence; the working temperature sequence and the compensation current sequence are respectively subjected to reference extraction processing to obtain the standard working temperature and standard compensation current corresponding to the first output wavelength. Repeatedly acquire the standard operating temperature and standard compensation current corresponding to all first standard wavelengths to obtain standard temperature data and standard current data; The reference extraction process includes: arranging the operating temperature sequence and the compensation current sequence in ascending order, denoted as the first temperature sequence and the first current sequence, respectively; calculating the mean and standard deviation of the k3 to k4 percentiles of the first temperature sequence and the first current sequence, denoted as AP1, AB1, AP2, and AB2, respectively, where k3 and k4 are set percentiles; AP1 and AB1 represent the mean and standard deviation corresponding to the first temperature sequence, and AP2 and AB2 represent the mean and standard deviation corresponding to the first current sequence; in this embodiment, k3=10, k4=90; that is, obtaining the mean and standard deviation of the middle 90% can cover most of the normal data and eliminate the influence of extreme outliers; Data in the first temperature sequence and the first current sequence that do not belong to the corresponding normal range are marked as abnormal data. After completion, a second temperature sequence and a second current sequence are obtained. The normal range corresponding to the first temperature sequence is [AP1-k5*AB1, AP1+k5*AB1], and the normal range corresponding to the first current sequence is [AP2-k5*AB2, AP2+k5*AB2], where k5 is a set scaling factor; in this embodiment, k5=2. For any pair of operating temperature and compensation current in the second temperature sequence and the second current sequence acquired in the same sampling, they are sequentially denoted as the first temperature and the first current, respectively. If there is abnormal data in the first temperature and the first current, they are removed. The processing of all data in the second temperature sequence and the second current sequence is repeated to obtain the third temperature sequence and the third current sequence. For example, in the first temperature and the first current acquired in the second sampling, if the first current is not abnormal data but the first temperature is abnormal data, then both the first temperature and the first current are removed. Temperature and current are coupled variables at the same sampling time. An abnormality in a single variable may reflect a system fault. Removing them in pairs ensures the consistency of the remaining data, reduces invalid data caused by accidental interference, and avoids contaminating subsequent processing. The third temperature sequence and the third current sequence were normalized according to their data types using the min-max normalization method, and all data sizes were scaled to [0, 1]. After normalization, the joint distribution of the two can be analyzed on a unified scale. The interval [0, 1] is evenly divided into M small intervals, which are sequentially denoted as intervals 1-M. These M small intervals are combined into M*M interval combinations, denoted as the temperature-current combination interval (i, j), where i and j represent interval i and interval j, respectively. M is the number of intervals not specified. In this embodiment, M=5, meaning each interval is 0.2, resulting in 25 interval combinations. For example, the temperature-current combination interval (1, 2) represents the combination interval [0, 0.2)-[0.2, 0.4). The number of times the corresponding temperature data in the same acquisition in the third temperature sequence and the third current sequence falls in interval i and the corresponding current data falls in interval j is counted and denoted as the frequency count G(i,j). For example, if the second acquisition temperature and compensation current correspond to 0.15 and 0.28 in the third temperature sequence and the third current sequence, respectively, then they fall within the combined interval [0, 0.2) - [0.2, 0.4). Repeatedly count the number of frequencies corresponding to all temperature-current combination intervals, and calculate the frequency probability corresponding to each frequency count according to the first formula, which is as follows: , where P(i,j) represents the frequency probability; by analyzing the synergistic relationship between temperature and current through joint distribution analysis, the patterns that traditional univariate analysis cannot discover are revealed; All frequency probabilities are accumulated in descending order until the accumulated frequency probability reaches k6, at which point the accumulation stops. The data corresponding to all accumulated frequency probabilities in the third temperature sequence and the third current sequence are statistically analyzed and denoted as the fourth temperature sequence and the fourth current sequence, respectively. In this embodiment, k6 is 90%. The high frequency probability range represents the temperature-current combination when the laser is operating stably; for example, the range with the highest probability (top 90%) can be considered the "effective operating area." This covers the typical operating states of the laser, eliminating low-probability edge conditions and improving data reliability. For any data point in the fourth temperature sequence and the fourth current sequence, denoted as the first data point, calculate the data weight Q(v) corresponding to the first data point, Q(v) = P(v) / G(v), where P(v) represents the frequency probability corresponding to the first data point, and G(v) represents the number of frequencies corresponding to P(v); the higher the frequency, the greater the weight, ensuring that the subsequent average value calculation is tilted towards the high frequency and high stability operating points; Repeatedly acquire the data weights corresponding to all data in the fourth temperature sequence and the fourth current sequence, and calculate the reference operating temperature and reference compensation current corresponding to the first output wavelength according to the second formula and the third formula respectively. The second formula is as follows: The third formula is as follows: Where BT(v) represents the reference operating voltage, BI(v) represents the reference compensation current, U represents the total number of data points in the fourth temperature sequence or the fourth current sequence, Tv represents the v-th data point in the fourth temperature sequence, and Iv represents the v-th data point in the fourth current sequence; and the reference acquisition time corresponding to the reference operating temperature and reference compensation current is calculated according to the fourth formula, which is as follows: Where CR(v) represents the corresponding reference acquisition time, and SR(v) represents the acquisition time corresponding to BT(v) and BI(v); weighted averaging makes the high-frequency data points have a greater impact on the results and suppresses the interference of noisy data. Repeatedly acquire the reference operating temperature, reference compensation current and corresponding reference acquisition time for all first standard wavelengths, and record them as reference temperature and current data. The second processing unit is configured with a second processing strategy, which includes: arranging the reference operating temperatures in the reference temperature current data in ascending order according to the corresponding wavelength, and recording them as a first reference temperature sequence; arranging the reference acquisition times corresponding to each reference operating temperature in the first reference temperature sequence in the corresponding order, and recording them as a reference time sequence; and recording any two adjacent reference operating temperatures in the first reference temperature sequence as a reference temperature interval. The rate of change of reference temperature for any reference temperature range in the first reference temperature sequence is calculated using the fifth formula; the fifth formula is as follows: After completion, reference temperature change data is obtained; the temperature change rate reflects the dynamic temperature requirements during wavelength tuning, providing a reference for subsequent wavelength control. In the specific implementation process, the reference operating temperature and reference compensation current represent the most likely combination of temperature and current in a statistical sense, and can be directly used as the standard operating parameters for that wavelength point; while through multi-stage data cleaning and statistical analysis, noise in the temperature and current data is eliminated to ensure the accuracy of the reference temperature and compensation current.

[0020] The data acquisition module is used to collect temperature data of the semiconductor laser during actual operation and calculate the temperature change difference in real time based on the reference temperature change data. The data acquisition module is configured with data acquisition strategies, which include: (Please refer to...) Figure 3 As shown, during the actual operation of the semiconductor laser, the theoretical output wavelength of the semiconductor laser is acquired at a first time interval. The theoretical output wavelength is a manually set output wavelength. At the same time, the actual operating temperature and the actual compensation current of the semiconductor laser are collected and the acquisition time is recorded as the actual operating data. The first time interval is t1, which can be set according to the actual application scenario. It is necessary to ensure that the transient changes in temperature and wavelength are captured to meet the real-time control requirements for data timeliness. In this embodiment, t1 = 20ms. The current actual operating temperature is recorded as the first actual temperature, and the previous actual operating temperature corresponding to the first actual temperature is recorded as the second actual temperature. The actual temperature change rate SW of the first actual temperature is calculated based on the first actual temperature, the second actual temperature and the corresponding acquisition time. The actual temperature change rate is calculated through data from two adjacent points to reflect the instantaneous rate of change of the current temperature. The theoretical output wavelengths corresponding to the first actual temperature and the second actual temperature are respectively denoted as the first theoretical wavelength LP1 and the second theoretical wavelength LP2; the wavelength ranges contained in LP1 and LP2 are denoted as the actual variation ranges. Obtain the reference temperature range corresponding to the first standard wavelength included in the actual variation range, denoted as the included reference range; based on the proportion of the first standard wavelength corresponding to the included reference range to the actual variation range, calculate the weighted average of the reference temperature change rate corresponding to the included reference range to obtain the theoretical temperature change rate LW of the first actual temperature; when the actual wavelength change spans multiple reference temperature ranges, the weighted average can smoothly transition the rate model of different ranges and avoid control oscillations caused by abrupt changes; the weight ratio reflects the distribution of wavelengths within the range, making LW closer to the actual tuning requirements; for example, the included reference range spans two reference temperature ranges, with reference temperature range 1 accounting for 40% and 60% of the included reference range; the reference temperature change rate of reference temperature range 1 is 0.200 k / s, and the reference temperature change rate of reference temperature range 2 is 0.210 k / s, then LW = 0.4 * 0.20 + 0.6 * 0.21 = 0.206 k / s; The temperature change error YW is calculated based on the theoretical temperature change rate LW and the actual temperature change rate SW. YW = |LW - SW|; that is, the absolute error between the theoretical rate and the actual rate. In the specific implementation process, the temperature range corresponding to the output wavelength range is evenly divided into multiple intervals. The reference temperature change rate is calculated independently for each interval, and a weighted average is performed according to the proportion of the actual change interval. The theoretical temperature change rate of the laser's current working wavelength is matched in real time. The actual temperature change rate of the laser is compared with the theoretical temperature change rate, which provides a basis for subsequent temperature control device adjustments.

[0021] The tuning control module adjusts and controls the temperature control device of the semiconductor laser based on the temperature difference. The tuning control module is configured with tuning control strategies, which include: (Please refer to...) Figure 4As shown, arrange the reference temperature change data in ascending order, denoted as the temperature change sequence. Obtain the minimum value and the maximum value of the temperature change sequence, denoted as WX and WD respectively in sequence. Uniformly divide [WX, WD] into k7 change sub-intervals, and count the temperature change sequences included in each change sub-interval, where k7 is the set number of intervals; k7 can be set according to the actual application scenario. In this embodiment, k7 = 5; through sorting and interval division, clarify the distribution range of the reference temperature change rate. Each sub-interval corresponds to a different temperature change rate range, providing a statistical basis for subsequent threshold setting; Obtain the reference temperature change rate corresponding to the reference interval included in the actual change interval, denoted as the included temperature change rate. Denote the change sub-interval with the most included temperature change rates as the reference change sub-interval. Obtain the range of the reference temperature change rate within the reference change sub-interval, denoted as the reference range CE; Denote k8*CE as the first change threshold AY1, and denote k9*CE as the second change threshold AY2; where, k8 and k9 are set proportionality coefficients, and k9 > k8; In this embodiment, k8 = 0.5 and k9 = 1.0; For example, if there are 3 reference temperature change rates corresponding to the reference interval, and two of them are in the 2nd change sub-interval and 1 is in the 3rd change sub-interval, then denote the 2nd change sub-interval as the reference change sub-interval; The reference change sub-interval represents the range of temperature change rates that the laser is most likely to have in the standard state. CE reflects the natural fluctuation amplitude within this interval; CE is used as the benchmark for threshold calculation, making the threshold associated with the actual fluctuation of the data distribution, and avoiding the fixed threshold being脱离实际工况 (this part seems to be a bit unclear in the original Chinese, I translated it as "deviating from the actual working conditions" for now). If YW < AY1, then do not adjust the temperature control device; avoid triggering unnecessary adjustments due to minor fluctuations and prevent power oscillation caused by frequent actions of the control system; If AY1 ≤ YW < AY2, then slightly adjust the power of the temperature control device, perform fine-tuning before the error significantly expands, and make the temperature change rate converge to the reference value to avoid error accumulation; If AY2 ≤ YW, then significantly adjust the power of the temperature control device; when the temperature change rate significantly deviates from the theoretical value, strong intervention can quickly pull the system back into the controllable range and avoid serious wavelength imbalance; In the specific implementation process, the adjustment amplitude of the temperature control device can be set according to the actual application scenario, or a specific algorithm can be used to linearly adjust within each threshold interval.

[0022] Embodiment 2, please refer to Figure 2 As shown, the present application provides a gas real-time detection wavelength tuning control method based on the TDLAS technology, including the following steps: Step S1 involves acquiring the operating temperature data and compensation current data of the semiconductor laser under standard operating conditions. Step S1 includes the following sub-steps: Step S101: Obtain the output optical power required for the semiconductor laser to detect the gas in real time, and record it as the standard output optical power; Step S102: Obtain the laser wavelength range of the gas output detected in real time by the semiconductor laser, and record it as the standard output wavelength range; record any output wavelength in the standard output wavelength range as the standard output wavelength. Step S103: The minimum and maximum output wavelengths within the standard output wavelength range are denoted as the minimum standard wavelength EX and the maximum standard wavelength ED, respectively. The time period during which the laser wavelength output by the semiconductor laser changes from the minimum standard wavelength to the maximum standard wavelength is denoted as the standard change period. Step S104: The state in which the semiconductor laser outputs wavelength at the standard output wavelength, output optical power at the standard output optical power, and the variation period of the standard output wavelength range is the standard variation period is recorded as the standard operating state of the semiconductor laser. Step S105: Divide the standard output wavelength range evenly into k1 standard output wavelength intervals; select k2 standard output wavelengths evenly from each standard output wavelength interval, and denot them as the first standard wavelengths; Step S106: Under standard operating conditions, the semiconductor laser is used to sequentially collect the operating temperature and compensation current corresponding to the first standard wavelength of the output laser. The collection time is recorded starting from the output laser wavelength EX. The collection is repeated multiple times to obtain the operating temperature data and compensation current data.

[0023] Step S2 involves performing reference extraction processing on the operating temperature data and compensation current data, and then performing temperature change extraction processing to obtain reference temperature change data. Step S2 includes the following sub-steps: Step S201: For any first standard wavelength, denoted as the first output wavelength, the working temperature and compensation current magnitude collected under different sampling times for the first output wavelength are arranged in sequence according to the corresponding sampling times and denoted as the working temperature sequence and compensation current sequence. Step S202: Perform reference extraction processing on the operating temperature sequence and the compensation current sequence respectively to obtain the standard operating temperature and standard compensation current corresponding to the first output wavelength. Step S203: Repeatedly acquire the standard operating temperature and standard compensation current corresponding to all first standard wavelengths to obtain standard temperature data and standard current data. Step S204, referencing the extraction process, includes the following sub-steps: Step S2041: Arrange the working temperature sequence and the compensation current sequence in ascending order, and denot them as the first temperature sequence and the first current sequence, respectively; calculate the average value and standard deviation of the k3 percentile to the k4 percentile of the first temperature sequence and the first current sequence, and denot them as AP1, AB1, AP2 and AB2 in order, respectively, where k3 and k4 are the set percentiles; Step S2042: Mark the data in the first temperature sequence and the first current sequence that do not belong to the corresponding normal range as abnormal data. After completion, the second temperature sequence and the second current sequence are obtained. The normal range corresponding to the first temperature sequence is [AP1-k5*AB1, AP1+k5*AB1], and the normal range corresponding to the first current sequence is [AP2-k5*AB2, AP2+k5*AB2], where k5 is a set scaling factor. Step S2043: For any pair of working temperature and compensation current in the second temperature sequence and the second current sequence that are collected in the same time, record them as the first temperature and the first current in sequence. If there is abnormal data in the first temperature and the first current, remove the first temperature and the first current, and repeat the processing of all data in the second temperature sequence and the second current sequence to obtain the third temperature sequence and the third current sequence. Step S2044: Normalize the third temperature sequence and the third current sequence according to their data types using the minimum-maximum normalization method, scaling all data sizes to [0, 1]; divide [0, 1] evenly into M small intervals, which are sequentially denoted as intervals 1-M; combine the M small intervals into M*M interval combinations, denoted as temperature-current combination intervals (i, j), where i and j represent interval i and interval j respectively; where M is the number of intervals not set. Step S2045: Count the number of times the corresponding temperature data in the same acquisition in the third temperature sequence and the third current sequence falls within interval i and the corresponding current data falls within interval j, denoted as the frequency count G(i, j); Repeat the count of the frequency counts corresponding to all temperature-current combination intervals, and calculate the frequency probability corresponding to each frequency count according to the first formula, which is as follows: , where P(i,j) represents the frequency probability; Step S2046: Accumulate all frequency probabilities in descending order until the accumulated frequency probability reaches k6, then stop accumulating, where k6 is the set threshold probability; Calculate the data corresponding to all accumulated frequency probabilities in the third temperature sequence and the third current sequence, and record them as the fourth temperature sequence and the fourth current sequence, respectively. Step S2047: For any data point in the fourth temperature sequence and the fourth current sequence, denoted as the first data point, calculate the data weight Q(v) corresponding to the first data point, Q(v) = P(v) / G(v), where P(v) represents the frequency probability corresponding to the first data point, and G(v) represents the number of frequencies corresponding to P(v); Step S2048: Repeatedly acquire the data weights corresponding to all data in the fourth temperature sequence and the fourth current sequence, and calculate the reference operating temperature and reference compensation current corresponding to the first output wavelength according to the second formula and the third formula respectively. The second formula is as follows: The third formula is as follows: Where BT(v) represents the reference operating voltage, BI(v) represents the reference compensation current, U represents the total number of data points in the fourth temperature sequence or the fourth current sequence, Tv represents the v-th data point in the fourth temperature sequence, and Iv represents the v-th data point in the fourth current sequence; and the reference acquisition time corresponding to the reference operating temperature and reference compensation current is calculated according to the fourth formula, which is as follows: Where CR(v) represents the corresponding reference acquisition time, and SR(v) represents the acquisition time corresponding to BT(v) and BI(v); Step S2049: Repeatedly acquire the reference operating temperature, reference compensation current and corresponding reference acquisition time for all first standard wavelengths, and record them as reference temperature and current data. Step S205: Arrange the reference operating temperatures in the reference temperature and current data in ascending order according to the corresponding wavelength, and record them as the first reference temperature sequence; arrange the reference acquisition times corresponding to each reference operating temperature in the first reference temperature sequence in the corresponding order, and record them as the reference time sequence; record any two adjacent reference operating temperatures in the first reference temperature sequence as the reference temperature interval. Step S206: Calculate the rate of change of reference temperature for any reference temperature interval in the first reference temperature sequence according to the fifth formula; the fifth formula is as follows: After completion, reference temperature change data is obtained.

[0024] Step S3 involves acquiring temperature data of the semiconductor laser during actual operation and calculating the temperature change error in real time based on reference temperature change data. Step S3 includes the following sub-steps: Step S301: During the actual operation of the semiconductor laser, the theoretical output wavelength of the semiconductor laser is acquired at a first time interval, and the actual operating temperature and actual compensation current of the semiconductor laser are collected at the same time. The collection time is recorded as the actual working data, where the first time interval is t1. Step S302: Denote the currently collected actual working temperature as the first actual temperature, denote the previously collected actual working temperature corresponding to the first actual temperature as the second actual temperature, and calculate the actual temperature change rate SW of the first actual temperature according to the first actual temperature, the second actual temperature, and the corresponding collection time. Step S303: Denote the theoretical output wavelengths corresponding to the first actual temperature and the second actual temperature as the first theoretical wavelength LP1 and the second theoretical wavelength LP2 respectively; denote the wavelength range included in LP1 and LP2 as the actual change range. Step S304: Obtain the reference temperature range corresponding to the first standard wavelength included in the actual change range, denoted as the included reference range; obtain the weighted average of the reference temperature change rate corresponding to the included reference range according to the proportion of the first standard wavelength corresponding to the included reference range in the actual change range, and obtain the theoretical temperature change rate LW of the first actual temperature. Step S305: Calculate the temperature change error YW according to the theoretical temperature change rate LW and the actual temperature change rate SW, YW = |LW - SW|.

[0025] Step S4: Adjust and control the temperature control device of the semiconductor laser according to the temperature change error; Step S4 includes the following sub-steps: Step S401: Arrange the reference temperature change data in ascending order, denoted as the temperature change sequence, obtain the minimum value and the maximum value of the temperature change sequence, denoted as WX and WD respectively, divide, evenly divide [WX, WD] into k7 change sub-intervals, and count the temperature change sequences included in each change sub-interval, where k7 is the set number of intervals. Step S402: Obtain the reference temperature change rate corresponding to the included reference range of the actual change range, denoted as the included temperature change rate, denote the change sub-interval containing the most included temperature change rates as the reference change sub-interval, and obtain the range of the reference temperature change rate within the reference change sub-interval, denoted as the reference range CE. [[ID=IS]]Step S403: Denote k8 * CE as the first change threshold AY1, and denote k9 * CE as the second change threshold AY2; where, k8 and k9 are set proportionality coefficients, and k9 > k8. Step S404: If YW < AY1, do not adjust the temperature control device; if AY1 ≤ YW < AY2, slightly adjust the power of the temperature control device, and if AY2 ≤ YW, greatly adjust the power of the temperature control device.

[0026] Example 3, please refer to Figure 5 as shown Figure 5A schematic diagram of an electronic device is provided, which may include a processor, a communication interface, a memory, and a communication bus. The processor, communication interface, and memory communicate with each other via the communication bus. The memory stores computer-readable instructions, which the processor can call. When the processor executes a computer-readable instruction, it performs steps such as those in a gas real-time detection wavelength tuning control method based on TDLAS technology to achieve the following functions: acquiring operating temperature data and compensation current data of the semiconductor laser under standard operating conditions; performing reference extraction processing on the operating temperature data and compensation current data, and performing temperature change extraction processing to obtain reference temperature change data; acquiring temperature data of the semiconductor laser during actual operation, and calculating the temperature change error in real time based on the reference temperature change data; and adjusting and controlling the temperature control device of the semiconductor laser based on the temperature change error.

[0027] Furthermore, when the logical instructions in the aforementioned memory can be implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0028] Example 4: This application also provides a computer-readable storage medium storing a computer program. When the computer program is executed by a processor, it performs the steps of the gas real-time detection wavelength tuning control method based on TDLAS technology described above to achieve the following functions: acquiring operating temperature data and compensation current data of the semiconductor laser under standard operating conditions; performing reference extraction processing on the operating temperature data and compensation current data, and performing temperature change extraction processing to obtain reference temperature change data; acquiring temperature data of the semiconductor laser during actual operation, and calculating the temperature change error in real time based on the reference temperature change data; and adjusting and controlling the temperature control device of the semiconductor laser based on the temperature change error.

[0029] Based on the above description of the embodiments, the embodiments of the present invention can be provided as methods, systems, or computer program products. Based on this understanding, the above technical solutions, in essence or in terms of their contribution to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or certain parts of the embodiments.

[0030] In the embodiments provided in this application, it should be understood that the disclosed system or method can be implemented in other ways. The embodiments described above are merely illustrative. For example, the division of modules or units is only a logical functional division, and there may be other division methods in actual implementation. Furthermore, multiple modules or units may be combined or integrated into another system, or some features may be ignored or not executed. Additionally, the coupling or direct coupling or communication connection shown or discussed may be through some communication interfaces. The indirect coupling or communication connection between systems, modules, and units may be electrical, mechanical, or other forms.

[0031] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A gas real-time detection wavelength tuning control system based on TDLAS technology, characterized in that, It includes a standard acquisition module, a reference extraction module, a data acquisition module, and a tuning control module; The standard acquisition module is used to acquire the operating temperature data and compensation current data of the semiconductor laser under standard operating conditions. The reference extraction module includes a first processing unit and a second processing unit. The first processing unit is used to perform reference extraction processing on the operating temperature data and compensation current data, and the second processing unit is used to perform temperature change extraction processing to obtain reference temperature change data. The data acquisition module is used to collect temperature data of the semiconductor laser during actual operation and to calculate the temperature change difference in real time based on the reference temperature change data. The tuning control module adjusts and controls the temperature control device of the semiconductor laser based on the temperature difference.

2. The gas real-time detection wavelength tuning control system based on TDLAS technology according to claim 1, characterized in that, The standard acquisition module is configured with standard acquisition strategies, which include: The output optical power required for real-time gas detection by a semiconductor laser is recorded as the standard output optical power. The range of laser wavelengths of the gas output from the semiconductor laser in real time is obtained and denoted as the standard output wavelength range; any output wavelength in the standard output wavelength range is denoted as the standard output wavelength; the minimum and maximum output wavelengths in the standard output wavelength range are denoted as the minimum standard wavelength EX and the maximum standard wavelength ED, respectively; the time period during which the laser wavelength output by the semiconductor laser changes from the minimum standard wavelength to the maximum standard wavelength is denoted as the standard change period. The standard operating state of a semiconductor laser is defined as the state in which the output wavelength is the standard output wavelength, the output optical power is the standard output optical power, and the variation period of the standard output wavelength range is the standard variation period.

3. The gas real-time detection wavelength tuning control system based on TDLAS technology according to claim 2, further comprising the standard acquisition strategy: The standard output wavelength range is evenly divided into k1 standard output wavelength intervals; The standard output wavelength of k2 is uniformly selected from each standard output wavelength range and denoted as the first standard wavelength. With the semiconductor laser in standard operating condition, the operating temperature and compensation current corresponding to the first standard wavelength of the output laser of the semiconductor laser are collected sequentially, and the collection time is recorded starting from the output laser wavelength EX. The data was collected repeatedly to obtain operating temperature data and compensation current data.

4. The gas real-time detection wavelength tuning control system based on TDLAS technology according to claim 3, characterized in that, The first processing unit is configured with a first processing strategy, which includes: For any first standard wavelength, denoted as the first output wavelength, the working temperature and compensation current magnitudes collected at different sampling times for the first output wavelength are arranged sequentially according to the corresponding sampling times and denoted as the working temperature sequence and compensation current sequence, respectively. The working temperature sequence and compensation current sequence are respectively subjected to reference extraction processing to obtain the standard working temperature and standard compensation current corresponding to the first output wavelength. Repeatedly acquire the standard operating temperature and standard compensation current corresponding to all first standard wavelengths to obtain standard temperature data and standard current data; The reference extraction process includes: arranging the working temperature sequence and the compensation current sequence in ascending order, and denoting them as the first temperature sequence and the first current sequence, respectively; calculating the mean and standard deviation of the k3 percentile to the k4 percentile of the first temperature sequence and the first current sequence, and denoting them as AP1, AB1, AP2 and AB2 in order, respectively, where k3 and k4 are the set percentiles; The data in the first temperature sequence and the first current sequence that do not belong to the corresponding normal range are marked as abnormal data. After completion, the second temperature sequence and the second current sequence are obtained. The normal range corresponding to the first temperature sequence is [AP1-k5*AB1, AP1+k5*AB1], and the normal range corresponding to the first current sequence is [AP2-k5*AB2, AP2+k5*AB2], where k5 is a set scaling factor. For any pair of working temperature and compensation current in the second temperature sequence and the second current sequence acquired in the same time, they are recorded as the first temperature and the first current in sequence. If there is abnormal data in the first temperature and the first current, the first temperature and the first current are removed, and all data in the second temperature sequence and the second current sequence are processed repeatedly to obtain the third temperature sequence and the third current sequence.

5. The gas real-time detection wavelength tuning control system based on TDLAS technology according to claim 4, characterized in that, Reference extraction processing also includes: The third temperature sequence and the third current sequence were normalized according to their data types using the min-max normalization method, and all data sizes were scaled to [0, 1]. Divide [0, 1] evenly into M small intervals, which are denoted as intervals 1-M in sequence; combine the M small intervals into M*M interval combinations, which are denoted as temperature-current combination intervals (i, j), where i and j represent interval i and interval j respectively; M is the number of intervals that are not set. The number of times the corresponding temperature data in the same acquisition in the third temperature sequence and the third current sequence is in interval i and the corresponding current data is in interval j is counted and denoted as the frequency count G(i,j). Repeatedly count the number of frequencies corresponding to all temperature-current combination intervals, and calculate the frequency probability corresponding to each frequency count according to the first formula, which is as follows: , where P(i,j) represents the frequency probability; All frequency probabilities are accumulated in descending order until the accumulated frequency probability reaches k6, at which point the accumulation stops. The data corresponding to all accumulated frequency probabilities in the third temperature sequence and the third current sequence are counted and denoted as the fourth temperature sequence and the fourth current sequence, respectively. For any data point in the fourth temperature sequence and the fourth current sequence, denoted as the first data point, calculate the data weight Q(v) corresponding to the first data point, Q(v) = P(v) / G(v), where P(v) represents the frequency probability corresponding to the first data point, and G(v) represents the number of frequencies corresponding to P(v). Repeatedly acquire the data weights corresponding to all data in the fourth temperature sequence and the fourth current sequence, and calculate the reference operating temperature and reference compensation current corresponding to the first output wavelength according to the second formula and the third formula respectively. The second formula is as follows: The third formula is as follows: Where BT(v) represents the reference operating voltage, BI(v) represents the reference compensation current, U represents the total number of data points in the fourth temperature sequence or the fourth current sequence, Tv represents the v-th data point in the fourth temperature sequence, and Iv represents the v-th data point in the fourth current sequence; and the reference acquisition time corresponding to the reference operating temperature and reference compensation current is calculated according to the fourth formula, which is as follows: Where CR(v) represents the corresponding reference acquisition time, and SR(v) represents the acquisition time corresponding to BT(v) and BI(v); Repeatedly acquire the reference operating temperature, reference compensation current, and corresponding reference acquisition time for all first standard wavelengths, and record them as reference temperature and current data.

6. The gas real-time detection wavelength tuning control system based on TDLAS technology according to claim 5, characterized in that, The second processing unit is configured with a second processing strategy, which includes: Arrange the reference working temperatures in the reference temperature-current data in ascending order according to the corresponding wavelengths, and denote it as the first reference temperature sequence; and arrange the reference acquisition times corresponding to each reference working temperature in the first reference temperature sequence in the corresponding order, and denote it as the reference time sequence; Denote any two adjacent reference working temperatures in the first reference temperature sequence as the reference temperature interval. The rate of change of reference temperature for any reference temperature range in the first reference temperature sequence is calculated using the fifth formula; the fifth formula is as follows: After completion, reference temperature change data is obtained.

7. The gas real-time detection wavelength tuning control system based on TDLAS technology according to claim 6, characterized in that, The data acquisition module is configured with a data acquisition strategy, and the data acquisition strategy includes: During the actual operation of the semiconductor laser, acquire the theoretical output wavelength of the semiconductor laser at a first time interval, and simultaneously collect the actual working temperature and the actual compensation current magnitude of the semiconductor laser, and record the acquisition time, denoted as the actual working data, where the first time interval is t1. For the currently acquired actual working temperature, denoted as the first actual temperature, denote the previously acquired actual working temperature corresponding to the first actual temperature as the second actual temperature, and calculate the actual temperature change rate SW of the first actual temperature according to the first actual temperature, the second actual temperature, and the corresponding acquisition time. Denote the theoretical output wavelengths corresponding to the first actual temperature and the second actual temperature in order as the first theoretical wavelength LP1 and the second theoretical wavelength LP2 respectively; Denote the wavelength interval included in LP1 and LP2 as the actual change interval.

8. The gas real-time detection wavelength tuning control system based on TDLAS technology according to claim 7, characterized in that, The data acquisition strategy further includes: Obtain the reference temperature interval corresponding to the first standard wavelength included in the actual change interval, denoted as the included reference interval; Obtain the weighted average of the reference temperature change rate corresponding to the included reference interval according to the proportion of the first standard wavelength corresponding to the included reference interval in the actual change interval, and obtain the theoretical temperature change rate LW of the first actual temperature. Calculate the temperature change error YW according to the theoretical temperature change rate LW and the actual temperature change rate SW, YW = |LW - SW|.

9. The gas real-time detection wavelength tuning control system based on TDLAS technology according to claim 8, characterized in that, The tuning control module is configured with a tuning control strategy, and the tuning control strategy includes: Arrange the reference temperature change data in ascending order, denoted as the temperature change sequence, obtain the minimum value and the maximum value of the temperature change sequence, denoted as WX and WD respectively in order, divide [WX, WD] evenly into k7 change sub-intervals, and count the temperature change sequences included in each change sub-interval, where k7 is the set number of intervals. Obtain the reference temperature change rate corresponding to the included reference interval of the actual change interval, denoted as the included temperature change rate, denote the change sub-interval containing the most included temperature change rates as the reference change sub-interval, and obtain the range of the reference temperature change rate within the reference change sub-interval, denoted as the reference range CE. Denote k8*CE as the first change threshold AY1, and denote k9*CE as the second change threshold AY2; where, k8 and k9 are set proportionality coefficients, and k9 > k8. If YW < AY1, then do not adjust the temperature control device; if AY1 ≤ YW < AY2, then slightly adjust the power of the temperature control device, if AY2 ≤ YW, then greatly adjust the power of the temperature control device.

10. A gas real-time detection wavelength tuning control method based on TDLAS technology, used to implement any gas real-time detection wavelength tuning control system based on TDLAS technology as claimed in claims 1-9, characterized in that, Include the following steps: Collect the working temperature data and compensation current data corresponding to the semiconductor laser in the standard working state. The operating temperature data and compensation current data are processed for reference extraction, and temperature change extraction is performed to obtain reference temperature change data. Collect temperature data of semiconductor lasers during actual operation, and calculate temperature change error in real time based on reference temperature change data; The temperature control device of the semiconductor laser is adjusted and controlled based on the temperature change error.

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