Conductive polymer for reticle stage cleaning apparatus

Abstract

A reticle stage cleaning apparatus for a reticle stage jig in a lithographic apparatus, comprising: a substrate having a front side and a back side opposite the front side; and a conductive layer disposed on the front side of the substrate. The conductive layer is configured to contact the reticle stage clamp to dissipate charge on the reticle stage clamp and remove particles on the reticle stage clamp via an electrostatic field generated between the conductive layer and the reticle stage clamp. The conductive layer may include a conductive polymer. The conductive polymer may have an electrical conductivity of at least about 1 S / cm. The conductivity of the conductive polymer is variable and can be tuned to a desired value. The conductive polymer may include polyaniline, polyparaphenylene, polythiophene, polypyrrole, polyparastyrene, trans-polyacetylene, combinations thereof, or derivatives thereof (e.g., polymer blends, copolymers, graft polymers, surface modifiers, surface treatments, additives, and / or fillers).

Description

Cross-references to related applications

[0001] This application claims priority to U.S. Application 63 / 458,198, filed April 10, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This disclosure relates to mask stage cleaning (RTC) apparatus, systems, and methods, such as charge dissipation and particle removal RTC apparatus for lithography apparatus and systems. Background Technology

[0003] A lithography apparatus is a machine configured to apply a desired pattern onto a substrate. Lithography apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithography apparatus can project a pattern from a patterning apparatus (e.g., a mask, a photomask) onto a radiation-sensitive material (resist) layer disposed on a substrate.

[0004] To project a pattern onto a substrate, a photolithography apparatus can use electromagnetic radiation. The wavelength of this radiation determines the minimum size of the feature that can be formed on the substrate. Compared to photolithography apparatuses using deep ultraviolet (DUV) radiation with wavelengths of, for example, 157 nm, 193 nm, or 248 nm, photolithography apparatuses using extreme ultraviolet (EUV) radiation with wavelengths in the range of 4 nm to 20 nm (e.g., 6.7 nm or 13.5 nm) can be used to form smaller features on the substrate.

[0005] Mask stages used in lithography equipment to hold patterning apparatus can become contaminated (e.g., accumulate particles) over time. Contaminants can be transferred from the mask stage to the patterning apparatus, for example, by electrostatic chucks holding the patterning apparatus in place during patterning. Contaminants can accumulate on the patterning apparatus and cause patterning errors and / or defects. Contaminated mask stages can be cleaned manually, but manual cleaning may leave residues of fine particles. Furthermore, manual cleaning requires venting the lithography equipment to atmospheric pressure and partial disassembly, thus reducing overall yield.

[0006] Current RTC devices utilize an insulating top coating that can accumulate charge over multiple cycles (e.g., trapping charge carriers within the insulating coating). Under vacuum, the RTC device eventually adheres to the mask stage due to parasitic charges between the relatively insulating contact surfaces. These parasitic charges necessitate purging the lithography equipment to atmospheric pressure and partially disassembling it to manually separate the RTC device from the mask stage. One way to dissipate the charge between the mask stage (e.g., an electrostatic clamp) and the RTC device is to use separate conductive devices positioned between each load of the RTC device. However, this process reduces the scanning capability and overall efficiency of the lithography equipment due to the need for two devices. Summary of the Invention

[0007] Therefore, it is necessary to dissipate the charge on the mask stage, remove particles from the mask stage, and utilize a single conductive RTC device to improve the efficiency, scanning capability, and overall yield of the lithography equipment.

[0008] In some aspects, a mask stage cleaning apparatus for a mask stage fixture in a photolithography apparatus may include a substrate having a front side and a back side opposite to the front side. In some aspects, the mask stage cleaning apparatus may include a conductive layer disposed on the front side of the substrate. In some aspects, the conductive layer may be configured to contact the mask stage fixture to dissipate charge on the mask stage fixture. In some aspects, the conductive layer may be configured to remove particles from the mask stage fixture via an electrostatic field generated between the conductive layer and the mask stage fixture.

[0009] In some aspects, the conductivity of the conductive layer may be at least about 1 S / cm. In some aspects, the conductivity of the conductive layer may be greater than about 1 S / cm. In some aspects, the conductivity of the conductive layer may be at least about 2 S / cm. In some aspects, the conductivity of the conductive layer may be at least about 5 S / cm. In some aspects, the conductivity of the conductive layer may be at least about 10 S / cm. In some aspects, the conductivity of the conductive layer may be at least about 100 S / cm. In some aspects, the conductivity of the conductive layer may be at least about 200 S / cm.

[0010] In some aspects, the conductivity of the conductive layer can be in the range of about 1 S / cm to about 600 S / cm. In some aspects, the conductivity of the conductive layer can be in the range of about 10 S / cm to about 600 S / cm. In some aspects, the conductivity of the conductive layer can be in the range of about 100 S / cm to about 600 S / cm. In some aspects, the conductivity of the conductive layer can be in the range of about 100 S / cm to about 1000 S / cm.

[0011] In some aspects, the conductivity of the conductive layer can be variable and can be configured to be tuned to a desired value.

[0012] In some aspects, the conductive layer may include a conductive polymer. In some aspects, the conductive polymer may include polyaniline, poly(p-phenylenevinylene), polythiophene, polypyrrole, poly(p-phenylenevinylene), trans-polyacetylene, or combinations thereof. In some aspects, combinations of polyaniline, poly(p-phenylenevinylene), polythiophene, polypyrrole, poly(p-phenylenevinylene), and / or trans-polyacetylene may include polymer blends, copolymers, and / or graft polymers.

[0013] In some aspects, the conductive polymer may include additives. In some aspects, the additives may be configured to modify the conductivity of the conductive polymer. In some aspects, the additives may be configured to modify the mechanical properties of the conductive polymer. In some aspects, the additives may include carbon, graphite, carbon black, carbon nanotubes, fullerenes, metal particles, plasticizers, flame retardants, heat stabilizers, impact modifiers, antioxidants, colorants, lubricants, light stabilizers, quenchers, deacidifying agents, pigments, antistatic agents, nucleating agents, abrasives, slip compounds, or combinations thereof.

[0014] In some aspects, the conductive polymer may include a filler. In some aspects, the filler may be configured to alter the conductivity of the conductive polymer. In some aspects, the filler may be configured to alter the mechanical properties of the conductive polymer. In some aspects, the filler may include organic materials, inorganic materials, polymeric materials, metallic materials, ceramic materials, or combinations thereof. In some aspects, the filler may include carbon, graphite, carbon black, carbon nanotubes, fullerenes, metal particles, wood, fibers, glass fibers, carbon fibers, minerals, calcium carbonate, clay, kaolin, titanium dioxide, talc, wollastonite, glass, mica, aluminum trihydrate, nanofillers, or combinations thereof.

[0015] In some aspects, the conductive polymer may comprise a single layer. In some aspects, the conductive polymer may comprise multiple layers. In some aspects, the conductive polymer may include surface treatments (e.g., surface roughening, surface abrasion, plasma treatment, acid treatment, etc.). In some aspects, the conductive polymer may include surface modification (e.g., graft polymerization, corona treatment, etc.).

[0016] In some aspects, the mask stage cleaning apparatus may further include a second conductive layer disposed between the conductive layer and the substrate. In some aspects, the stiffness of the conductive layer may be lower than the stiffness of the second conductive layer. In some aspects, the conductivity of the second conductive layer may be in the range of about 50 S / cm to about 850 S / cm. In some aspects, the second conductive layer may include chromium nitride, titanium nitride, or carbon nitride. In some aspects, the conductivity of the conductive layer may be variable and may be configured to compensate for the conductivity of the second conductive layer, such that the overall conductivity of the apparatus can be tuned to a desired value.

[0017] In some aspects, photolithography equipment may include the mask stage cleaning equipment. In some aspects, metrology equipment may include the mask stage cleaning equipment.

[0018] In some aspects, the lithography apparatus may include an irradiation system configured to irradiate a pattern forming apparatus. In some aspects, the lithography apparatus may include a projection system configured to project an image of the pattern forming apparatus onto a patterned substrate. In some aspects, the lithography apparatus may include a mask stage configured to support the pattern forming apparatus. In some aspects, the mask stage may include a chuck and an electrostatic clamp. In some aspects, the electrostatic clamp may include a plurality of protrusions. In some aspects, the lithography apparatus may include a mask stage cleaning device configured to dissipate charge on the electrostatic clamp and remove particles from the electrostatic clamp. In some aspects, the mask stage cleaning device may include a substrate having a front side and a back side opposite to the front side. In some aspects, the mask stage cleaning device may include a conductive layer disposed on the front side of the substrate. In some aspects, the conductive layer may be configured to contact the plurality of protrusions of the electrostatic clamp. In some aspects, the conductive layer may be configured to remove particles from the electrostatic clamp via an electrostatic field generated between the conductive layer and the electrostatic clamp.

[0019] In some aspects, the conductivity of the conductive layer may be at least about 1 S / cm. In some aspects, the conductivity of the conductive layer may be at least about 10 S / cm. In some aspects, the conductivity of the conductive layer may be in the range of about 10 S / cm to about 600 S / cm. In some aspects, the conductivity of the conductive layer may be in the range of about 10 S / cm to about 1000 S / cm.

[0020] In some aspects, the conductive layer may include a conductive polymer. In some aspects, the conductive polymer may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene, or combinations thereof. In some aspects, the conductive polymer may be polyaniline. In some aspects, the conductive polymer may be poly(p-phenylene). In some aspects, the conductive polymer may be polythiophene. In some aspects, the conductive polymer may be polypyrrole. In some aspects, the conductive polymer may be poly(p-styrene). In some aspects, the conductive polymer may be trans-polyacetylene.

[0021] In some aspects, a method of forming a mask stage cleaning apparatus for removing particles from a mask stage in a photolithography apparatus may include forming a conductive polymer having a conductivity of at least about 1 S / cm on the front side of a substrate. In some aspects, the conductivity may be at least about 10 S / cm. In some aspects, the conductivity may be in the range of about 10 S / cm to about 600 S / cm. In some aspects, the conductive polymer may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene, or combinations thereof.

[0022] In some aspects, forming the conductive polymer may include tuning the conductivity of the conductive polymer to a desired value. In some aspects, tuning the conductivity may include using polymerization. In some aspects, tuning the conductivity may include including additives in the conductive polymer. In some aspects, tuning the conductivity may include including fillers in the conductive polymer.

[0023] In some aspects, forming the conductive polymer may include spin coating, slot coating, dip coating, spray coating, electrospinning, deposition, gravure coating, or a combination thereof. In some aspects, forming the conductive polymer may include forming multiple layers.

[0024] In some aspects, the method may further include forming a conductive layer disposed between the conductive polymer and the substrate. In some aspects, forming the conductive polymer may include tuning the conductivity of the conductive polymer based on the conductivity of the conductive layer, such that the overall conductivity of the mask stage cleaning apparatus is tuned to a desired value. In some aspects, the stiffness of the conductive polymer may be lower than the stiffness of the conductive layer.

[0025] In some aspects, forming the conductive polymer may include tuning the mechanical properties of the conductive polymer (e.g., stiffness, Young's modulus, elasticity, elastic modulus, adhesion, density, glass transition temperature, etc.) to desired values. In some aspects, tuning the mechanical properties may include using polymerization. In some aspects, tuning the mechanical properties may include including additives in the conductive polymer. In some aspects, tuning the mechanical properties may include including fillers in the conductive polymer.

[0026] In some aspects, the method may further include contacting the mask stage cleaning device with a plurality of protrusions of an electrostatic clamp of the mask stage. In some aspects, the method may further include generating an electrostatic field between the mask stage cleaning device and the electrostatic clamp. In some aspects, the method may further include removing particles disposed on the electrostatic clamp. In some aspects, the method may further include repeating the contact step, the generation step, and the removal step to further remove particles from the electrostatic clamp to the mask stage cleaning device.

[0027] Implementations of any of the techniques described above may include EUV light sources, DUV light sources, systems, methods, processes, apparatuses, and / or devices. Details of one or more embodiments are set forth in the accompanying drawings and embodiments. Other features will become apparent from the embodiments, drawings, and claims.

[0028] Other features and exemplary aspects of the aspects, as well as the structure and operation of the various aspects, are described in detail below with reference to the accompanying drawings. It should be noted that the aspects are not limited to the specific aspects described herein. Such aspects are presented herein for illustrative purposes only. Additional aspects will be apparent to those skilled in the art based on the teachings contained herein. Attached Figure Description

[0029] The accompanying drawings, which are incorporated herein and form part of this specification, and together with the embodiments, further serve to explain the principles of the aspects and enable one or more people skilled in the art to perform and use the aspects.

[0030] Figure 1 It is a schematic illustration of a lithography apparatus according to an exemplary aspect.

[0031] Figure 2 It is a schematic perspective view of the mask stage and the mask based on the exemplary aspects.

[0032] Figure 3 yes Figure 2 The diagram shows a schematic cross-sectional view of the mask stage and the mask.

[0033] Figure 4This is a schematic perspective view of an RTC device based on an exemplary aspect.

[0034] Figure 5 yes Figure 4 The diagram shows a schematic cross-sectional view of the RTC device.

[0035] Figures 6A to 6F for Figure 4 and Figure 5 The diagram shows schematic two-dimensional chemical structures of different conductive polymers used in RTC devices.

[0036] Figures 7A to 7C The illustration depicts a process cycle of removing particles from a mask stage to an RTC device according to an exemplary aspect.

[0037] Figure 8 This is a schematic perspective view of an RTC device having a conductive layer comprising multiple layers, according to an exemplary aspect.

[0038] Figure 9 yes Figure 8 The diagram shows a schematic cross-sectional view of the RTC device.

[0039] Figure 10 This is a schematic perspective view of an RTC device with a second conductive layer according to an exemplary aspect.

[0040] Figure 11 for Figure 10 The diagram shows a schematic cross-sectional view of the RTC device.

[0041] Figure 12 This is a schematic perspective view of an RTC device having two conductive layers and no substrate, according to an exemplary aspect.

[0042] Figure 13 yes Figure 12 The diagram shows a schematic cross-sectional view of the RTC device.

[0043] Figure 14 The illustration shows a manufacturing process diagram for manufacturing an RTC device according to an exemplary aspect.

[0044] Figure 15 The illustration shows a cleaning process flow diagram for removing particles from a mask stage to an RTC device according to an exemplary aspect.

[0045] Features and exemplary aspects of these aspects will become apparent from the specific embodiments described below in conjunction with the accompanying drawings, in which the same reference numerals consistently identify corresponding elements. In the drawings, the same reference numerals generally indicate identical, functionally similar, and / or structurally similar elements. Additionally, typically one or more leftmost numerals of the reference numerals identify the drawing in which the reference numeral first appears. Unless otherwise indicated, the drawings provided throughout this disclosure should not be construed as topping-out drawings. Detailed Implementation

[0046] This specification discloses one or more aspects incorporating the features of the invention. The disclosed one or more aspects are merely illustrative. The scope of the invention is not limited to the disclosed one or more aspects. The invention is defined by the appended claims.

[0047] The description of one or more aspects and the references to "an aspect," "aspect," "example aspect," "exemplary aspect," etc., in this specification indicate that the described one or more aspects may include a particular feature, structure, or characteristic, but each aspect may not necessarily include the particular feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same aspect. Moreover, when a particular feature, structure, or characteristic is described in conjunction with aspects, it should be understood that, whether explicitly described or not, achieving such a feature, structure, or characteristic in conjunction with other aspects is within the understanding of someone skilled in the art.

[0048] Spatial relative terms such as “below,” “under,” “lower,” “above,” “on,” and “upper” are used herein for ease of description to describe the relationship of one element or feature to another element or feature, as illustrated in the figures. In addition to the directions depicted in the figures, spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or otherwise), and the spatial relative descriptors used herein will be interpreted accordingly.

[0049] As used herein, the terms “about,” “roughly,” or “approximately” indicate a value of a given quantity that may vary based on a particular technique. Based on a particular technique, the terms “about,” “roughly,” or “approximately” may indicate a value of a given quantity that varies, for example, within 1% to 15% of the value (e.g., ±1%, ±2%, ±5%, ±10%, or ±15% of the value).

[0050] The aspects of this disclosure can be implemented in hardware, firmware, software, or any combination thereof. The aspects of this disclosure can also be implemented as instructions stored on a machine-readable medium, which can be read and executed by one or more processors. A machine-readable medium can include any means for storing or transmitting information in a form that can be read by a machine (e.g., a computing device). For example, a machine-readable medium can include read-only memory (ROM); random access memory (RAM); disk storage media; optical storage media; flash memory devices; electrical, optical, acoustic, or other forms of propagation signals (e.g., carrier waves, infrared signals, digital signals, etc.); etc. Furthermore, firmware, software, routines, and / or instructions can be described herein as performing certain actions. However, it should be understood that such descriptions are merely for convenience, and such actions are actually caused by a computing device, processor, controller, or other means of executing firmware, software, routines, instructions, etc.

[0051] However, before describing such aspects in more detail, it is instructive to present example environments that can be used to implement aspects of this disclosure.

[0052] Exemplary lithography system

[0053] Figure 1 A lithography system including a radiation source SO and a lithography apparatus LA is shown. The radiation source SO is configured to generate EUV and / or DUV radiation beams B and supply EUV and / or DUV radiation beams B to the lithography apparatus LA. The lithography apparatus LA includes an irradiation system IL, a support structure MT (e.g., mask stage, mask plate stage, mask plate stage) configured to support a pattern forming apparatus MA (e.g., a mask, a mask plate), a projection system PS, and a substrate stage WT configured to support a substrate W.

[0054] The irradiation system IL is configured to adjust the EUV and / or DUV radiation beam B before it is incident on the pattern forming apparatus MA. Additionally, the irradiation system IL may include a faceted field mirror assembly 10 and a faceted pupil mirror assembly 11. Together, the faceted field mirror assembly 10 and the faceted pupil mirror assembly 11 provide the EUV and / or DUV radiation beam B with a desired cross-sectional shape and a desired intensity distribution. In addition to or in place of the faceted field mirror assembly 10 and the faceted pupil mirror assembly 11, the irradiation system IL may include other mirrors or devices.

[0055] After such adjustment, the EUV and / or DUV radiation beam B interacts with the patterning apparatus MA. This interaction can be reflective (as shown), which is preferred for EUV radiation. This interaction can also be transmissive, which is preferred for DUV radiation. Due to this interaction, a patterned EUV and / or DUV radiation beam B' is generated. The projection system PS is configured to project the patterned EUV and / or DUV radiation beam B' onto the substrate W. For this purpose, the projection system PS may include a plurality of mirrors 13, 14 configured to project the patterned EUV and / or DUV radiation beam B' onto the substrate W held by the substrate stage WT. The projection system PS may apply a reduction factor to the patterned EUV and / or DUV radiation beam B', thereby forming an image with features smaller than those on the patterning apparatus MA. For example, a reduction factor of 4 or 8 may be applied. Although the projection system PS in Figure 1 The diagram shows only two mirrors 13 and 14, but the projection system PS can include a different number of mirrors (e.g., six or eight mirrors).

[0056] The substrate W may include a previously formed pattern. In such a case, the photolithography apparatus LA aligns the image formed by the patterned EUV and / or DUV radiation beams B' with the pattern previously formed on the substrate W.

[0057] Exemplary mask stage equipment and mask equipment

[0058] As discussed above, a mask stage (e.g., support structure MT) used in a lithography apparatus (e.g., a lithography apparatus LA) to hold a patterning apparatus (e.g., a patterning apparatus MA) can become contaminated (e.g., accumulate particles) over time. Contaminants can be transferred from the mask stage to the patterning apparatus, for example, by an electrostatic clamp that holds the patterning apparatus during patterning.

[0059] Figure 2 and Figure 3 The illustrations show mask platform 200 and mask 300 according to various exemplary aspects. Figure 2 These are schematic illustrations of mask platform 200 and mask 300 according to exemplary aspects. Figure 3 yes Figure 2 The diagram shows a schematic cross-sectional view of the mask stage 200 and the mask 300.

[0060] Figure 2 and Figure 3 The illustration shows a mask stage 200 according to various exemplary aspects. The mask stage 200 can be configured to support a pattern forming apparatus (e.g., a mask 300). The mask stage 200 can also be configured to support a cleaning device (e.g., a cleaning device). Figures 4 to 13 The RTC devices 400, 400', 400'', and 400''' shown are shown in the image. Although the mask stage 200 is... Figure 2 and Figure 3 While shown as separate devices and / or systems, aspects of this disclosure may be used in conjunction with other devices and / or systems, such as, but not limited to, lithography equipment LA, support structure MT, patterning apparatus MA, mask 300 and / or RTC devices 400, 400', 400'', 400'''.

[0061] like Figure 2 and Figure 3 As shown, the mask stage 200 may include a clamp chuck 202 and an electrostatic clamp 204. The clamp chuck 202 may be configured to support the electrostatic clamp 204 (e.g., by negative pressure). The electrostatic clamp 204 may be configured to electrostatically support a pattern forming apparatus (e.g., mask 300) and / or cleaning equipment (e.g., RTC devices 400, 400', 400'', 400'''). For example, a voltage may be applied to the electrostatic clamp 204 to generate an electrostatic field between the object (e.g., mask 300, RTC devices 400, 400', 400'', 400''') and the electrostatic clamp 204 to hold the object.

[0062] like Figure 2 and Figure 3 As shown, the electrostatic clamp 204 may include clamping electrodes 206 (e.g., embedded) and protrusions 208 (e.g., external protrusions or bumps). In some aspects, clamping electrodes 206 may be embedded in the electrostatic clamp 204 and aligned with protrusions 208 (e.g., vertically). Clamping electrodes 206 may be configured to generate an electrostatic field between protrusions 208 and / or objects (e.g., mask 300, RTC devices 400, 400', 400'', 400'''). Protrusions 208 may be configured to physically contact objects (e.g., mask 300, RTC devices 400, 400', 400'', 400''') to clamp (e.g., electrostatically) and hold objects.

[0063] In some aspects, such as Figure 2As shown, the electrostatic clamp 204 may include various particles or contaminants on its external surfaces (e.g., contact surfaces). For example, first particles 210 may be disposed between protrusions 208 and second particles 212 may be disposed on protrusions 208. Contaminants (e.g., first particles 210, second particles 212) may accumulate on the electrostatic clamp 204 and cause patterning errors and / or defects. For example, contaminants (e.g., first particles 210, second particles 212) may be transferred to objects (e.g., mask 300, RTC devices 400, 400', 400'', 400''') during electrostatic clamping of objects.

[0064] In some aspects, the electrostatic clamp 204 can be configured to provide a voltage on an object (e.g., mask 300, RTC device 400, 400', 400'', 400''') relative to the mask stage 200 (e.g., the protrusion 208 of the electrostatic clamp 204). For example, clamp electrodes 206 can provide a voltage difference ΔV (e.g., from an applied negative voltage (-V) or positive voltage (+V)) between the mask stage 200 and the object, such that an electrostatic field is generated between the mask stage 200 and the object. The generated electrostatic field exerts electrostatic forces (e.g., Lorentz forces) and / or van der Waals forces on contaminants (e.g., first particle 210, second particle 212, etc.) and causes the contaminants to move from the mask stage 200 (e.g., the electrostatic clamp 204) to the object.

[0065] Figure 2 and Figure 3 The illustration shows a mask 300 according to various exemplary aspects. Mask 300 can be configured to generate patterned radiation beams (e.g., patterned EUV and / or DUV radiation beams B'). While mask 300 is in Figure 2 and Figure 3 While shown as separate devices and / or systems, aspects of this disclosure may be used in conjunction with other devices and / or systems, such as, but not limited to, lithography equipment LA, support structure MT, mask stage 200, and / or pattern forming apparatus MA.

[0066] like Figure 2 and Figure 3As shown, the mask 300 may include a pattern forming apparatus 302 (e.g., pattern forming apparatus MA) and a back-side layer 304. The back-side layer 304 may be configured to contact the protrusions 208 of the electrostatic clamp 204, such that the mask stage 200 can hold (e.g., electrostatically) the mask 300 without damaging the pattern forming apparatus 302. The back-side layer 304 may be disposed on the back side of the pattern forming apparatus 302. In some aspects, the back-side layer 304 may include a polymer or a combination of polymers. For example, the back-side layer 304 may include polyimide, Viton® fluororubber, polytetrafluoroethylene (PTFE), Teflon, fluoropolymers, and / or any other material with a stiffness lower than that of the pattern forming apparatus 302. Contaminants (e.g., first particle 210, second particle 212) on the electrostatic clamp 204 and / or mask 300 may cause damage to the electrostatic clamp 204, damage to the mask 300, and / or patterning errors (e.g., overlap misalignment or gaps).

[0067] Exemplary Mask Stage Cleaning (RTC) Equipment

[0068] As discussed above, contaminants (e.g., first particle 210, second particle 212, etc.) may accumulate on the patterning apparatus (e.g., mask 300) and / or the patterning apparatus support (e.g., mask stage 200) and cause patterning errors and / or defects. Contaminated mask stages (e.g., mask stage 200) can be manually cleaned, but manual cleaning may leave residues of fine particles, thus generating new contaminants. Furthermore, manual cleaning requires the lithography equipment (e.g., lithography apparatus LA) to be vented to atmospheric pressure and partially disassembled, thereby reducing overall yield.

[0069] Current RTC devices utilize an insulating top coating that can accumulate charge over multiple cycles (e.g., trapping charge carriers within the insulating coating). Under vacuum, the RTC device eventually adheres to the mask stage due to parasitic charges between opposing insulating contact surfaces. These parasitic charges necessitate purging the lithography equipment to atmospheric pressure and partially disassembling it to manually separate the RTC device from the mask stage. One way to dissipate the charge between the mask stage (e.g., an electrostatic clamp) and the RTC device is to use separate conductive devices positioned between each load of the RTC device. However, this process reduces the scanning capability and overall efficiency of the lithography equipment due to the need for two devices.

[0070] The RTC devices, systems, and methods discussed below can dissipate charge on the mask stage, remove particles from the mask stage, and improve efficiency, scanning capability, and overall yield in lithography equipment.

[0071] Figure 4 and Figure 5The illustration shows an RTC device 400 according to various exemplary aspects. Figure 4 This is a schematic perspective view of an RTC device 400 according to an exemplary aspect. Figure 5 yes Figure 4 A schematic cross-sectional view of the RTC device 400 shown in the figure (along with the following). Figure 4 The V in the diagram refers to the plane indicated by V. The RTC device 400 can be configured to clean the mask stage 200 in a lithography apparatus (e.g., a lithography apparatus LA). The RTC device 400 can also be configured to dissipate charges accumulated on the mask stage 200 (e.g., accumulated charges on the electrostatic chuck 204). The RTC device 400 can also be configured to remove contaminants (e.g., first particles 210, second particles 212, etc.) from the mask stage 200 (e.g., the electrostatic chuck 204) via an electrostatic field generated between the RTC device 400 and the mask stage 200. Although the RTC device 400 is in... Figure 4 and Figure 5 While shown as a standalone device and / or system, aspects of this disclosure can be used in conjunction with other devices and / or systems, such as, but not limited to, a lithography apparatus LA, a support structure MT, a mask stage 200, a pattern forming apparatus MA, and / or a mask 300. In some aspects, the RTC device 400 may be part of a lithography apparatus, such as a portion of the lithography apparatus LA. In some aspects, the RTC device 400 may be part of a metrology apparatus.

[0072] like Figure 4 and Figure 5 As shown, the RTC device 400 may include a front side 402, a back side 404, a substrate 406, a first front layer 410, a voltage source 420, and / or a positioner 430. The RTC device 400 has a front side 402 and a back side 404 opposite to the front side 402. The front side 402 is configured to contact the mask stage 200. For example, the front side 402 may contact the protrusions 208 of the electrostatic clamp 204. In some aspects, the substrate 406 may be disposed between the first front layer 410 and the positioner 430. In some aspects, the substrate 406 may be an insulator. For example, the substrate 406 may be quartz, silicon oxide, silicon, glass, ceramic, semiconductor, and / or a combination thereof.

[0073] The first front layer 410 may be configured to contact the mask stage 200 (e.g., the protrusion 208 of the electrostatic clamp 204) to dissipate charge accumulated on the mask stage 200. The first front layer 410 may also be configured to contact the mask stage 200 (e.g., the protrusion 208 of the electrostatic clamp 204) to remove contaminants (e.g., first particles 210, second particles 212, etc.). The first front layer 410 may also be configured to increase the conductivity of the RTC device 400 and thereby reduce charge accumulation on the mask stage 200 (e.g., drawing charge away from the mask stage 200). The first front layer 410 may also be configured to increase the adhesion of the RTC device 400 to the mask stage 200. The first front layer 410 may also be configured to reduce the stiffness of the RTC device 400 to the mask stage 200. The first front layer 410 may be disposed on the front side (e.g., front side 402) of the substrate 406.

[0074] In some aspects, the first front layer 410 may be conductive. For example, the first front layer 410 may have a conductivity of at least about 1 S / cm. In some aspects, the first front layer 410 may have a conductivity of at least about 1 S / cm to reduce charge accumulation on the mask stage 200 and / or RTC device 400. For example, the conductivity may be about 2 S / cm. In some aspects, the first front layer 410 may have a conductivity of at least about 10 S / cm. For example, the conductivity may be about 20 S / cm. In some aspects, the first front layer 410 may have a conductivity of at least about 100 S / cm. For example, the conductivity may be about 200 S / cm. In some aspects, the first front layer 410 may have a conductivity of at least about 500 S / cm. For example, the conductivity may be about 600 S / cm. In some aspects, the first front layer 410 may have a conductivity of at least about 1,000 S / cm. For example, the conductivity can be about 2,000 S / cm. In some aspects, the first front layer 410 can have a conductivity of no more than about 600 S / cm. In some aspects, the first front layer 410 can have a conductivity of no more than about 1,000 S / cm. In some aspects, the first front layer 410 can have a conductivity of no more than about 10,000 S / cm.

[0075] In some aspects, the first front layer 410 may have a conductivity in the range of about 1 S / cm to about 600 S / cm to reduce charge accumulation on the mask stage 200 and / or RTC device 400. In some aspects, the first front layer 410 may have a conductivity in the range of about 10 S / cm to about 600 S / cm. In some aspects, the first front layer 410 may have a conductivity in the range of about 100 S / cm to about 600 S / cm. In some aspects, the first front layer 410 may have a conductivity in the range of about 100 S / cm to about 1,000 S / cm. In some aspects, the first front layer 410 may have a conductivity in the range of about 100 S / cm to about 10,000 S / cm. In some aspects, the first front layer 410 may have a variable (e.g., adjustable) conductivity. For example, the conductivity may be tuned to a desired value, such as about 10 S / cm. In some aspects, the first front layer 410 may include a conductive polymer.

[0076] Figures 6A to 6F for Figure 4 and Figure 5 The diagram shows a schematic two-dimensional chemical structure of different conductive polymers in the first front layer 410 of the RTC device 400. Figures 6A to 6F The diagrams illustrate repeating units of polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), and trans-polyacetylene that can be used to form the first front layer 410. In some aspects, the conductivity of the conductive polymer of the first front layer 410 can be in a range (e.g., variable) and can depend on the chemical formation process used (e.g., polymerization, spin coating, slot coating, dip coating, spray coating, electrospinning, deposition, gravure printing coating, etc.), the additives added, and / or the fillers added, as shown in Table I below, for example. Table I: Conductivity range of conductive polymers

[0077] In some aspects, for example, such as Figures 6A to 6F As shown, the first front layer 410 may comprise polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene, or combinations thereof. In some aspects, the combination of polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), and / or trans-polyacetylene may comprise polymer blends, copolymers, and / or graft polymers. In some aspects, the first front layer 410 may comprise polyaniline. For example, as... Figure 6A As shown, the first front layer 410 may be polyaniline and, for example, have a conductivity of about 10 S / cm. In some aspects, the first front layer 410 may include poly(p-phenylene). For example, as... Figure 6BAs shown, the first front layer 410 may be poly(p-phenylene) and, for example, have a conductivity of about 200 S / cm. In some aspects, the first front layer 410 may include polythiophene. For example, as... Figure 6C As shown, the first front layer 410 may be polythiophene and, for example, have a conductivity of about 500 S / cm. In some aspects, the first front layer 410 may include polypyrrole. For example, as... Figure 6D As shown, the first front layer 410 may be polypyrrole and, for example, have a conductivity of about 600 S / cm. In some aspects, the first front layer 410 may include polystyrene. For example, as... Figure 6E As shown, the first front layer 410 may be poly(p-styrene) and, for example, have a conductivity of about 1,000 S / cm. In some aspects, the first front layer 410 may include trans-polyacetylene. For example, as... Figure 6F As shown, the first front layer 410 may be trans-polyacetylene and, for example, have a conductivity of about 2,000 S / cm. In some aspects, the first front layer 410 may comprise one or more conductive polymers. For example, the first front layer 410 may comprise a combination of polyaniline and poly(p-phenylene), such as alternating layers in a polymer stack.

[0078] In some aspects, the first front layer 410 may include additives configured to modify the conductivity and / or mechanical properties (e.g., stiffness, Young's modulus, elasticity, elastic modulus, adhesion, density, glass transition temperature, etc.) of the first front layer 410. For example, the additives may include carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, plasticizers, flame retardants, heat stabilizers, impact modifiers, antioxidants, colorants, lubricants, light stabilizers, quenchers, deacidifiers, pigments, antistatic agents, nucleating agents, abrasives, slip agents, or combinations thereof. In some aspects, the first front layer 410 may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene, or combinations thereof having additives. For example, the first front layer 410 may include poly(p-phenylene) having plasticizers (e.g., camphor, N-ethyl-p-toluenesulfonamide, N-butylbenzenesulfonamide, 2-nitrobenzene, etc.).

[0079] In some aspects, the first front layer 410 may include a filler configured to modify the conductivity and / or mechanical properties (e.g., stiffness, Young's modulus, elasticity, elastic modulus, adhesion, density, glass transition temperature, etc.) of the first front layer 410. For example, the filler may include carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, wood, fibers, glass fibers, carbon fibers, minerals, calcium carbonate, clay, kaolin, titanium dioxide, talc, wollastonite, glass, mica, aluminum trihydrate, nanofillers, or combinations thereof. In some aspects, the filler may include organic materials, inorganic materials, polymeric materials, metallic materials, ceramic materials, or combinations thereof. In some aspects, the first front layer 410 may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene, or combinations thereof having a filler. For example, the first front layer 410 may include polypyrrole having kaolin.

[0080] In some aspects, the first front layer 410 may include a single layer. For example, as... Figure 4 and Figure 5 As shown, the first front layer 410 may be a single layer (e.g., polyaniline). In some aspects, the first front layer 410 may include multiple layers. For example, as... Figure 8 and Figure 9 As shown, the first front layer 410' can be multiple layers 410a, 410b, 410c (e.g., polyaniline, polythiophene, and polypyrrole, respectively).

[0081] In some aspects, the first front layer 410 may have a stiffness lower than that of the substrate 406. For example, the first front layer 410 may have a stiffness of about 50 N / m, and the substrate 406 may have a stiffness of about 1800 N / m. In some aspects, the first front layer 410 may be substantially planar. For example, as... Figure 4 and Figure 5 As shown, the first front layer 410 may be flat (e.g., of uniform thickness). In some aspects, the first front layer 410 may have a thickness of no more than about 8 micrometers in order to generate an electrostatic field between the first front layer 410 and the mask stage 200.

[0082] In some aspects, the RTC device 400 may also include a second front side layer 412 disposed between the first front side layer 410 and the substrate 406. For example, as Figure 10 and Figure 11As shown, the second front layer 412 may be conductive (e.g., a conductive metal, a conductive nitride, a conductive polymer, etc.) and is disposed below the first front layers 410, 410'. In some aspects, the second front layer 412 may have a conductivity in the range of about 50 S / cm to about 850 S / cm. In some aspects, the second front layer 412 may include chromium nitride, titanium nitride, carbon nitride, or any other rigid conductive material. In some aspects, the first front layer 410 may have a stiffness lower than that of the second front layer 412.

[0083] In some aspects, the first front layer 410 may have a variable (e.g., adjustable) conductivity configured to compensate for the conductivity of the second front layer 412, such that the total conductivity of the RTC device 400 can be tuned to a desired value. For example, the second front layer 412 may have a conductivity (G2) of about 600 S / cm, and the conductivity (G1) of the first front layer 410 may be tuned to about 400 S / cm, such that the total conductivity is tuned to a desired value, for example, about 240 S / cm. For example, the second front layer 412 may have a conductivity of about 600 S / cm (G2), and the conductivity of the first front layer 410 (G1) may be tuned to about 1,800 S / cm, such that the total conductivity is tuned to a desired value, such as about 450 S / cm.

[0084] Voltage source 420 can be configured to provide a voltage on the first front layer 410 relative to mask stage 200 (e.g., the protrusion 208 of electrostatic clamp 204). For example, voltage source 420 can be electrically coupled to the first front layer 410 to provide a voltage difference ΔV (e.g., from an applied negative voltage (-V) or positive voltage (+V)) between mask stage 200 and RTC device 400, such that an electrostatic field is generated between mask stage 200 and RTC device 400. The generated electrostatic field exerts electrostatic forces (e.g., Lorentz forces) and / or van der Waals forces on contaminants (e.g., first particles 210, second particles 212) and causes the contaminants to move from mask stage 200 (e.g., electrostatic clamp 204) to RTC device 400 (e.g., the first front layer 410).

[0085] In some respects, the voltage source 420 can be internal to the RTC device 400. For example, as Figure 5 As shown, voltage source 420 may be embedded or disposed within substrate 406. In some aspects, voltage source 420 may be external to RT device 400. In some aspects, voltage source 420 may be a battery-powered voltage source configured to provide a high voltage on the front side 402 of RTC device 400. In some aspects, voltage source 420 may provide a voltage of about 1 kV to about 5 kV.

[0086] In some aspects, the RTC device 400 may omit the voltage source 420, and the first front layer 410 may be used as a passive conductor (e.g., the first front layer 410 may be grounded or maintained at 0 V). For example, the clamping electrode 206 of the electrostatic clamp 204 may provide a voltage on the protrusion 208 relative to the first front layer 410 to generate an electrostatic field between the electrostatic clamp 204 and the first front layer 410.

[0087] Positioner 430 can be configured to translate the first front layer 410 relative to mask stage 200. For example, positioner 430 can translate the first front layer 410 in a vertical direction (e.g., Z-axis) toward the protrusion 208 of electrostatic clamp 204. In some aspects, positioner 430 can be a six-axis translation platform for six degrees of freedom (e.g., X, Y, Z, yaw, pitch, roll). For example, positioner 430 can be configured to contact RTC device 400 (e.g., first front layer 410) with mask stage 200 in a first surface region, retract RTC device 400 from the first region, translate RTC device 400 to a second surface region of mask stage 200, and contact RTC device (e.g., first front layer 410) with mask stage 200 in the second surface region. In some aspects, positioner 430 can include one or more linear motors (e.g., servo motors). In some respects, the locator 430 can be positioned at the rear side 404 of the RTC device 400. For example, as Figure 4 and Figure 5 As shown, substrate 406 may be disposed on top of positioner 430. In some aspects, positioner 430 may be an exchange device for loading one or more masks (e.g., RTC device 400) onto electrostatic clamp 204.

[0088] Exemplary process loop

[0089] Figures 7A to 7C The illustration shows a process cycle 700 in which contaminants (e.g., first particle 210, second particle 212, etc.) are removed from the mask stage 200 to the RTC device 400 according to various exemplary aspects. Figure 7A This is a schematic cross-sectional view of the mask stage 200 and the RTC device 400 in the initial steps. Figure 7B This is a schematic cross-sectional view of the mask stage 200 and the RTC device 400 during the contact step. Figure 7C This is a schematic cross-sectional view of the mask stage 200 and the RTC device 400 during the retraction step.

[0090] like Figure 7AAs shown, the RTC device 400 can approach the protrusion 208 of the electrostatic clamp 204 of the mask stage 200 such that the protrusion 208 is positioned in a generally vertical direction opposite (e.g., conductive) to the first front layer 410 in the initial step. For example, the positioner 430 can align the first front layer 410 with the protrusion 208 of the electrostatic clamp 204. Contaminants (e.g., first particles 210, second particles 212, etc.) are disposed on the outer surface of the electrostatic clamp 204.

[0091] like Figure 7B As shown, the RTC device 400 can be vertically translated (e.g., +Z axis) along the contact direction 702 toward the mask stage 200 during the contact step and physically contact the protrusion 208 of the electrostatic clamp 204. During the contact step, a voltage difference ΔV can be applied between the RTC device 400 and the mask stage 200 (e.g., by applying voltage to the clamp electrode 206 and / or the first front layer 410) to generate an electrostatic field between the RTC device 400 and the mask stage 200. The generated electrostatic field exerts electrostatic forces (e.g., Lorentz forces) and / or van der Waals forces on contaminants (e.g., first particles 210, second particles 212, etc.) and causes the contaminants to move from the mask stage 200 to the RTC device 400. The contaminants (e.g., first particles 210, second particles 212, etc.) contact the first front layer 410 and remain on the front 402. Furthermore, when the first front layer 410 (e.g., conductive) comes into contact with the electrostatic clamp 204, any charge accumulated on the electrostatic clamp 204 can be dissipated.

[0092] like Figure 7C As shown, the RTC device 400 can be vertically translated (e.g., -Z-axis) away from the mask stage 200 along the retraction direction 704 and retracted from the protrusion 208 of the electrostatic clamp 204 during the retraction step. During the retraction step, the front side 402 of the RTC device 400 can retain most (if not all) of the contaminants (e.g., first particles 210, second particles 212, etc.) from the electrostatic clamp 204 on the first front layer 410.

[0093] In some aspects, it can be repeated Figure 7B The contact step shown in Figure 7C and the retraction step shown in Figure 7C (e.g., multiple cycles) further remove contaminants (e.g., first particle 210, second particle 212, etc.) from the electrostatic fixture 204 to the RTC device 400. In some aspects, process cycle 700 may include contacting the mask stage 200 with the RTC device 400 in a first surface region, retracting the RTC device 400, translating the RTC device 400 (e.g., via positioner 430), and contacting the mask stage 200 with the RTC device 400 in a second surface region different from the first surface region.

[0094] Exemplary alternative RTC devices

[0095] Figures 8 to 13 The illustrations depict RTC devices 400', 400'', and 400''', based on various exemplary aspects. Figure 8 This is a schematic perspective view of an RTC device 400' based on an exemplary aspect. Figure 9 yes Figure 8 A schematic cross-sectional view of the RTC device 400' shown in the figure (along with the... Figure 8 (IX---The plane indicated by IX). Figure 10 This is a schematic perspective view of an RTC device 400'' based on an exemplary aspect. Figure 11 for Figure 10 A schematic cross-sectional view of the RTC device 400'' shown in the figure (along with the... Figure 10 XI in the diagram refers to the plane indicated by XI. Figure 12 This is a schematic perspective view of an RTC device 400''' based on an exemplary aspect. Figure 13 for Figure 12 A schematic cross-sectional view of the RTC device 400''' shown in the figure (along with the... Figure 12 XI in the diagram refers to the plane indicated by XI.

[0096] Figure 8 and Figure 9 The diagram is based on certain aspects of an RTC device 400'. For example, Figure 4 and Figure 5 The aspects of the RTC device 400 shown in the figure are similar to Figure 8 and Figure 9 The aspects of the RTC device 400' shown in the figure can be similar. Similar reference numerals are used to indicate Figure 4 and Figure 5 Features of the RTC device 400 shown in the figure and Figure 8 and Figure 9 Similar features to aspects of the RTC device 400' shown in the figure. Figure 4 and Figure 5 The aspects of the RTC device 400 shown in the figure are similar to Figure 8 and Figure 9 One difference between the aspects of the RTC device 400' shown is that the RTC device 400' includes a first front-side layer 410' having multiple layers 410a, 410b, 410c, instead of just... Figure 4 and Figure 5 The first front layer 410 (e.g., a single layer) is shown in the diagram. While the RTC device 400' is... Figure 8 and Figure 9While shown as separate devices and / or systems, aspects of this disclosure may be used in conjunction with other devices and / or systems, such as, but not limited to, lithography equipment LA, support structure MT, mask stage 200, pattern forming apparatus MA, and / or mask 300.

[0097] like Figure 8 and Figure 9 As shown, the RTC device 400' may include a first front layer 410' having multiple layers 410a, 410b, 410c. In some aspects, the first front layer 410' may include two layers, such as multiple layers 410a, 410b. In some aspects, the first front layer 410' may include more than two layers, such as multiple layers 410a, 410b, 410c. In some aspects, the first front layer 410' may include alternating conductive polymer layers, such as multiple layers 410a, 410b (e.g., polyaniline and polypyrrole, respectively). In some aspects, the first front layer 410' may include additives and / or fillers, such as multiple layers 410a, 410b, 410c (e.g., polypyrrole, calcium carbonate, and trans-polyacetylene, respectively).

[0098] Figure 10 and Figure 11 The diagram is based on a 400'' RTC device in some aspects. For example, Figure 4 and Figure 5 The aspects of the RTC device 400 shown in the figure are similar to Figure 10 and Figure 11 The aspects of the RTC device 400'' shown in the figure can be similar. Similar reference numerals are used to indicate Figure 4 and Figure 5 Features of the RTC device 400 shown in the figure and Figure 10 and Figure 11 Similar features to aspects of the RTC device 400'' shown in the figure. Figure 4 and Figure 5 The aspects of the RTC device 400 shown in the figure are similar to Figure 10 and Figure 11 One difference between the aspects of the RTC device 400'' shown is that the RTC device 400'' includes a second front side layer 412 disposed between the substrate 406 and the first front side layer 410, instead of only Figure 4 and Figure 5 The first front layer 410 is shown in the diagram. Although the RTC device 400'' is in... Figure 10 and Figure 11 While individual devices and / or systems are shown, aspects of this disclosure may be used in conjunction with other devices and / or systems, such as, but not limited to, lithography equipment LA, support structure MT, mask stage 200, pattern forming apparatus MA, and / or mask 300.

[0099] like Figure 10 and Figure 11 As shown, the RTC device 400'' may include a second front layer 412. The second front layer 412 may be configured to generate an electrostatic field between the mask stage 200 and the RTC device 400''. The second front layer 412 may also be configured to generate an electrostatic field to remove contaminants (e.g., first particles 210, second particles 212, etc.) from the mask stage 200 (e.g., electrostatic clamp 204). In some embodiments, such as Figure 11 As shown, the second front layer 412 can be electrically connected to a voltage source 420 to provide voltage to the second front layer 412.

[0100] In some aspects, the second front layer 412 may be conductive (e.g., a conductive metal, a conductive nitride, a conductive polymer, etc.) and disposed below the first front layers 410, 410'. In some aspects, the second front layer 412 may have a conductivity in the range of about 50 S / cm to about 850 S / cm. For example, the second front layer 412 may have a conductivity in the range of about 200 S / cm to about 700 S / cm. In some aspects, the second front layer 412 may include chromium nitride, titanium nitride, carbon nitride, or any other rigid conductive material. For example, the second front layer 412 may be chromium nitride. In some aspects, the first front layers 410, 410' may have a stiffness lower than that of the second front layer 412. For example, the first front layers 410, 410' may have a stiffness of about 100 N / m, and the second front layer 412 may have a stiffness of about 1500 N / m. In some respects, the second front layer 412 can be generally flat. For example, as... Figure 10 and Figure 11 As shown, the second front layer 412 may be flat (e.g., of uniform thickness). In some aspects, the second front layer 412 may have a thickness of no more than about 8 micrometers in order to generate an electrostatic field between the first front layers 410, 410' and the mask stage 200.

[0101] Figure 12 and Figure 13 The diagram illustrates a 400''' RTC device based on certain aspects. For example, Figure 4 and Figure 5 The aspects of the RTC device 400 shown in the figure are similar to Figure 12 and Figure 13 The aspects of the RTC device 400''' shown in the figure can be similar. Similar reference symbols are used to indicate Figure 4 and Figure 5 Features of the RTC device 400 shown in the figure and Figure 12 and Figure 13 Similar features to aspects of the RTC device 400''' shown in the figure. Figure 4 and Figure 5 The aspects of the RTC device 400 shown in the figure are similar to Figure 12 and Figure 13 One difference between the aspects of the RTC device 400''' shown is that the RTC device 400''' includes a first front-side layer 410'' having a first layer 410a and a second layer 410b, and omits the substrate 406, instead of Figure 4 and Figure 5 The first front layer 410 and substrate 406 are shown in the diagram. Although the RTC device 400 is in... Figure 12 and Figure 13 While shown as separate devices and / or systems, aspects of this disclosure may be used in conjunction with other devices and / or systems, such as, but not limited to, lithography equipment LA, support structure MT, mask stage 200, pattern forming apparatus MA, and / or mask 300.

[0102] like Figure 12 and Figure 13 As shown, the RTC device 400''' may include a first front layer 410'' having a first layer 410a and a second layer 410b. In some aspects, the first front layer 410'' may include a conductive polymer layer, for example, the first layer 410a and the second layer 410b may include polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene), trans-polyacetylene, or combinations thereof, such as polymer blends, copolymers, and / or graft polymers. In some aspects, the first front layer 410'' may include different conductive polymer layers, for example, the first layer 410a and the second layer 410b (e.g., polyaniline and polypyrrole, respectively). In some aspects, the first front layer 410'' may include additives and / or fillers, for example, the first layer 410a and the second layer 410b (e.g., polypyrrole and calcium carbonate, respectively). In some aspects, for example, as... Figure 12 and Figure 13 As shown, the first front layer 410'' can be formed directly on the positioner 430 (e.g., the substrate 406 may be omitted). In some aspects, the first layer 410a and the second layer 410b may comprise a conductive polymer (e.g., polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene, or combinations thereof), such as a conductive polymer with conductivity equivalent to or higher than chromium nitride (CrN).

[0103] In some aspects, the first layer 410a may be conductive and disposed above the second layer 410b. In some aspects, the first layer 410a may have a conductivity in the range of about 1 S / cm to about 600 S / cm. For example, the first layer 410a may have a conductivity in the range of about 10 S / cm to about 300 S / cm. In some aspects, the second layer 410b may be conductive and disposed below the first layer 410a. In some aspects, the second layer 410b may have a conductivity in the range of about 50 S / cm to about 850 S / cm. For example, the second layer 410b may have a conductivity in the range of about 200 S / cm to about 700 S / cm. In some aspects, the first layer 410a and the second layer 410b may have a combined conductivity in the range of about 50 S / cm to about 850 S / cm. For example, the first layer 410a and the second layer 410b can have a total conductivity in the range of about 200 S / cm to about 700 S / cm.

[0104] Exemplary manufacturing process diagram

[0105] Figure 14 The illustration shows a manufacturing process diagram 1400 for manufacturing RTC devices 400, 400', 400'', and 400''' according to an exemplary aspect. It should be understood that... Figure 14 All steps in the above can be used to perform the disclosures provided herein. Furthermore, they can be performed simultaneously, sequentially, and / or with... Figure 14 The diagram illustrates some of the steps performed in different orders. (Refer to...) Figure 4 , Figure 5 , Figures 6A to 6F and Figures 8 to 11 The manufacturing process diagram 1400 is described. However, the manufacturing process diagram 1400 is not limited to those example aspects.

[0106] In step 1402, as Figure 4 , Figure 5 and Figures 6A to 6FAs illustrated in the example, the first front layer 410 may include a conductive polymer (e.g., polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-phenylene), trans-polyacetylene) and is formed on top of the substrate 406. In some aspects, the first front layer 410 may be formed by polymerization. In some aspects, the first front layer 410 may be formed by spin coating (e.g., coating the substrate 406 with a conductive polymer and spinning for uniform thickness), slot coating (e.g., casting the conductive polymer onto the substrate 406 through a slot), dip coating (e.g., immersing the substrate 406 in a conductive polymer and pressing an excess with a roller), spray coating (e.g., spraying the conductive polymer directly onto the substrate 406), electrospinning (e.g., directly spin-forming the conductive polymer onto the substrate 406), deposition, gravure printing coating (e.g., printing the conductive polymer directly onto the substrate 406 using a rotary printer), or a combination thereof. In some aspects, for example, as... Figure 12 and Figure 13 As shown, the first front layer 410 can be formed directly on the positioner 430 (e.g., the substrate 406 can be omitted) and the processes mentioned above can be performed on the positioner 430.

[0107] In some aspects, the first front layer 410 can be formed by deposition. For example, the first front layer 410 can be formed or deposited by any suitable method, including chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), low-pressure CVD (LPCVD), atomic layer deposition (ALD), pulsed laser deposition (PLD), electron beam physical vapor deposition (EBPVD), sputtering (e.g., RF, electron, potential, chemical), ion beam deposition, spin coating, liquid source atomized chemical deposition, and / or other suitable deposition methods. In some aspects, forming the first front layer 410 can include forming multiple layers, for example, as... Figure 8 and Figure 9 As shown, there are multiple layers 410a, 410b, and 410c.

[0108] In step 1404, optionally, as Figure 4 , Figure 5 and Figures 6A to 6FAs illustrated in the example, the conductivity of the first front layer 410 can be tuned to a desired value. In some aspects, step 1404 may be performed during step 1402. In some aspects, tuning the conductivity of the first front layer 410 may include polymerization. For example, repeating units of a conductive polymer (e.g., polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene) may be polymerized to form a first front layer 410 having a desired conductivity. In some aspects, polymerization may be tuned by adjusting the following: temperature, pressure, duration, rate, length of repeating units, thickness, degree of branching, copolymer, tacticity, photocuring, steric hindrance, electronegativity, solvent type, solubility, charge distribution, molecular stability, or combinations thereof.

[0109] In some aspects, tuning the conductivity of the first front layer 410 may include including additives in the first front layer 410. For example, additives may include carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, plasticizers, flame retardants, heat stabilizers, impact modifiers, antioxidants, colorants, lubricants, light stabilizers, quenchers, deacidifiers, pigments, antistatic agents, nucleating agents, abrasives, slip agents, or combinations thereof to increase or decrease the conductivity of the first front layer 410.

[0110] In some aspects, tuning the conductivity of the first front layer 410 may include including a filler in the first front layer 410. For example, the filler may include carbon, graphite, carbon black, carbon nanotubes, carbon fullerenes, metal particles, wood, fibers, glass fibers, carbon fibers, minerals, calcium carbonate, clay, kaolin, titanium dioxide, talc, wollastonite, glass, mica, aluminum trihydrate, nanofillers, or combinations thereof to increase or decrease the conductivity of the first front layer 410.

[0111] In step 1406, optionally, as Figure 10 and Figure 11As illustrated in the example, a second front layer 412 may be formed between the substrate 406 and the first front layers 410, 410'. In some aspects, the first front layers 410, 410' may be formed on top of the second front layer 412 after the second front layer 412 is formed on top of the substrate 406. In some aspects, the second front layer 412 may be formed by deposition. For example, the second front layer 412 may be formed or deposited by any suitable method, including CVD, PECVD, LPCVD, ALD, PLD, EBPVD, sputtering (e.g., RF, electronic, potentiometric, chemical), ion beam deposition, spin coating deposition, liquid source atomized chemical deposition, and / or other suitable deposition methods. In some aspects, the second front layer 412 may be conductive (e.g., conductive metal, conductive nitride, conductive polymer, etc.) and disposed below the first front layers 410, 410'. In some aspects, the second front layer 412 may have a conductivity in the range of about 50 S / cm to about 850 S / cm. For example, the second front layer 412 may have a conductivity in the range of about 200 S / cm to about 700 S / cm. In some aspects, the second front layer 412 may comprise chromium nitride, titanium nitride, carbon nitride, or any other rigid conductive material. For example, the second front layer 412 may be chromium nitride.

[0112] In some aspects, forming the first front layers 410, 410' may include tuning the conductivity of the first front layers 410, 410' based on the conductivity of the second front layer 412, such that the total conductivity of the RTC device 400'' can be tuned to a desired value. For example, the second front layer 412 may have a conductivity of about 600 S / cm (G2), and the conductivity of the first front layers 410, 410' (G1) may be tuned to about 400 S / cm, such that the total conductivity of the RTC device 400'' (e.g., in series along the vertical direction) is tuned to a desired value, such as about 240 S / cm. .

[0113] Exemplary cleaning flowchart

[0114] Figure 15 The illustration shows a cleaning process diagram 1500, according to an exemplary aspect, for removing contaminants (e.g., first particle 210, second particle 212, etc.) from mask stage 200 to RTC devices 400, 400', 400'', 400'''. It should be understood that... Figure 15 All steps in the above can be used to perform the disclosures provided herein. Furthermore, they can be performed simultaneously, sequentially, and / or with... Figure 15 The diagram illustrates some of the steps performed in different orders. (See also...) Figures 4 to 13The cleaning process diagram 1500 is described. However, the cleaning process diagram 1500 is not limited to those example aspects.

[0115] In step 1502, as Figures 4 to 13 As illustrated in the example, RTC devices 400, 400', 400'', 400''' can be formed to remove contaminants (e.g., first particle 210, second particle 212, etc.) from the mask stage 200. In some aspects, such as Figure 14 As shown, RTC devices 400, 400', 400'', and 400''' can be formed using manufacturing flow chart 1400.

[0116] In step 1504, as Figure 7B As illustrated in the example, RTC devices 400, 400', 400'', 400''' can contact the protrusions 208 of the electrostatic clamps 204 of the mask stage 200. In some aspects, RTC masks 400, 400', 400'', 400''' can physically contact the protrusions 208 of the electrostatic clamps 204 of the mask stage 200 such that the protrusions 208 are opposite (e.g., conductive) to the first front layer 410 in a generally vertical direction. For example, a locator 430 can align the first front layer 410 with the protrusions 208 of the electrostatic clamps 204.

[0117] In step 1506, as Figure 7B As illustrated in the example, one or more electrostatic fields can be generated between the RTC devices 400, 400', 400'', 400''' and the electrostatic clamp 204 of the mask stage 200. In some aspects, a voltage difference ΔV can be applied between the RTC device 400 and the mask stage 200 (e.g., by applying voltage to the clamp electrode 206, the first front layer 410, and / or the second front layer 412) to generate an electrostatic field between the RTC device 400 and the mask stage 200.

[0118] In step 1508, as Figure 7CAs illustrated in the example, contaminants (e.g., first particles 210, second particles 212, etc.) disposed on electrostatic fixture 204 can be removed from mask stage 200 to RTC devices 400, 400', 400'', 400'''. In some aspects, one or more generated electrostatic fields exert electrostatic forces (e.g., Lorentz forces) and / or van der Waals forces on the contaminants (e.g., first particles 210, second particles 212, etc.) and cause the contaminants to move from mask stage 200 to RTC device 400. The contaminants (e.g., first particles 210, second particles 212, etc.) contact the first front layer 410 (e.g., conductive) and remain on the front layer 402. Furthermore, when the first front layer 410 (e.g., conductive) contacts electrostatic fixture 204, any charge accumulated on electrostatic fixture 204 can be dissipated.

[0119] In step 1510, as Figures 7A to 7C As shown in the example, steps 1504, 1506, and 1508 can be repeated (e.g., multiple cycles) to further remove contaminants (e.g., first particle 210, second particle 212, etc.) from electrostatic clamp 204 to RTC devices 400, 400', 400'', 400'''.

[0120] Various embodiments of this system and method are disclosed in the following list of numbered aspects:

[0121] 1. A cleaning device for a fixture in a photolithography apparatus, the device comprising:

[0122] A substrate having a front side and a back side opposite to the front side; and

[0123] A conductive layer is disposed on the front side of the substrate and configured to contact the clamp to dissipate the charge on the clamp and remove particles on the clamp via an electrostatic field generated between the conductive layer and the clamp.

[0124] 2. The device according to aspect 1, wherein the conductivity of the conductive layer is at least about 1 S / cm.

[0125] 3. The device according to aspect 1, wherein the conductivity of the conductive layer is at least about 10 S / cm.

[0126] 4. The device according to aspect 1, wherein the conductivity of the conductive layer is at least about 100 S / cm.

[0127] 5. The device according to aspect 1, wherein the conductivity of the conductive layer is in the range of about 1 S / cm to about 600 S / cm.

[0128] 6. The device according to aspect 1, wherein the conductivity of the conductive layer is in the range of about 10 S / cm to about 600 S / cm.

[0129] 7. The device according to aspect 1, wherein the conductivity of the conductive layer is in the range of about 100 S / cm to about 600 S / cm.

[0130] 8. The device according to aspect 1, wherein the conductivity of the conductive layer is variable and configured to be tuned to a desired value.

[0131] 9. The device according to aspect 1, wherein the conductive layer comprises a conductive polymer.

[0132] 10. The device according to aspect 9, wherein the conductive polymer comprises polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene, or combinations thereof.

[0133] 11. The apparatus according to aspect 9, wherein the conductive polymer includes additives configured to alter the conductivity and / or mechanical properties of the conductive polymer.

[0134] 12. The device according to aspect 11, wherein the additives include carbon, graphite, carbon black, carbon nanotubes, carbon fullerene, metal particles, plasticizers, flame retardants, heat stabilizers, impact modifiers, antioxidants, colorants, lubricants, light stabilizers, quenchers, deacidifiers, pigments, antistatic agents, nucleating agents, abrasives, slip agents, or combinations thereof.

[0135] 13. The apparatus according to aspect 9, wherein the conductive polymer includes a filler configured to alter the conductivity and / or mechanical properties of the conductive polymer.

[0136] 14. The device according to aspect 13, wherein the filler comprises organic materials, inorganic materials, polymeric materials, metallic materials, ceramic materials, or combinations thereof.

[0137] 15. The device according to aspect 9, wherein the conductive polymer comprises a single layer.

[0138] 16. The device according to aspect 9, wherein the conductive polymer comprises a plurality of layers.

[0139] 17. The apparatus according to aspect 9, wherein the conductive polymer includes surface treatment and / or surface modification.

[0140] 18. The device according to aspect 1, further comprising a second conductive layer disposed between the conductive layer and the substrate.

[0141] 19. The device according to aspect 18, wherein the stiffness of the conductive layer is lower than the stiffness of the second conductive layer.

[0142] 20. The device according to aspect 18, wherein the conductivity of the second conductive layer is in the range of about 50 S / cm to about 850 S / cm.

[0143] 21. The device according to aspect 18, wherein the second conductive layer comprises chromium nitride, titanium nitride, or carbon nitride.

[0144] 22. The device according to aspect 18, wherein the conductivity of the conductive layer is variable and configured to compensate for the conductivity of the second conductive layer, such that the total conductivity of the device is tuned to a desired value.

[0145] 23. The apparatus according to aspect 1, wherein the cleaning apparatus is a mask table cleaning apparatus and the fixture is a mask fixture.

[0146] 24. A photolithography apparatus comprising the cleaning apparatus described in any of the preceding aspects.

[0147] 25. A measuring device comprising the cleaning device described in any one of the preceding aspects.

[0148] 26. A photolithography apparatus, comprising:

[0149] An irradiation system configured as an irradiation pattern forming apparatus;

[0150] A projection system configured to project an image from a patterning apparatus onto a patterned substrate;

[0151] A mask stage, configured to support a pattern forming apparatus and including a chuck and an electrostatic clamp comprising a plurality of protrusions; and

[0152] A mask stage cleaning device configured to dissipate charge on an electrostatic clamp and remove particles from the electrostatic clamp, the mask stage cleaning device comprising:

[0153] A substrate having a front side and a back side opposite to the front side; and

[0154] A conductive layer is disposed on the front side of the substrate and configured to contact a plurality of protrusions of the electrostatic clamp and remove particles on the electrostatic clamp via an electrostatic field generated between the conductive layer and the electrostatic clamp.

[0155] 27. The photolithography apparatus according to aspect 25, wherein the conductive layer comprises a conductive polymer.

[0156] 28. The photolithography apparatus according to aspect 26, wherein the conductive polymer comprises polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene, or combinations thereof.

[0157] 29. A method for forming a mask stage cleaning apparatus for removing particles from a mask stage in a photolithography apparatus, the method comprising:

[0158] A conductive polymer having a conductivity of at least about 1 S / cm is formed on the front side of the substrate.

[0159] 30. The method according to aspect 28, wherein the conductivity is at least about 10 S / cm.

[0160] 31. The method according to aspect 28, wherein the conductivity is in the range of about 10 S / cm to about 600 S / cm.

[0161] 32. The method according to aspect 28, wherein the conductive polymer comprises polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene, or combinations thereof.

[0162] 33. The method according to aspect 31, wherein the combination of polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), or trans-polyacetylene comprises a polymer blend, copolymer, or graft polymer.

[0163] 34. The method according to aspect 28, wherein forming the conductive polymer includes tuning the conductivity of the conductive polymer to a desired value.

[0164] 35. The method according to aspect 33, wherein tuning conductivity includes using polymerization.

[0165] 36. The method according to aspect 33, wherein tuning conductivity includes including additives in the conductive polymer.

[0166] 37. The method according to aspect 33, wherein tuning conductivity includes including a filler in the conductive polymer.

[0167] 38. The method according to aspect 28, wherein forming the conductive polymer includes spin coating, slot coating, dip coating, spray coating, electrospinning, deposition, gravure printing coating, or a combination thereof.

[0168] 39. The method according to aspect 28, wherein forming the conductive polymer includes forming a plurality of layers.

[0169] 40. The method according to aspect 28 further includes forming a conductive layer disposed between the conductive polymer and the substrate.

[0170] 41. The method according to aspect 39, wherein forming the conductive polymer includes tuning the conductivity of the conductive polymer based on the conductivity of the conductive layer, such that the total conductivity of the mask cleaning device is tuned to a desired value.

[0171] 42. The method according to aspect 39, wherein the stiffness of the conductive polymer is lower than the stiffness of the conductive layer.

[0172] 43. The method according to aspect 28, wherein forming the conductive polymer includes tuning the mechanical properties of the conductive polymer to desired values.

[0173] 44. The method according to aspect 28 further includes:

[0174] Make the mask stage cleaning equipment contact the multiple protrusions of the electrostatic clamps on the mask stage;

[0175] An electrostatic field is generated between the mask stage cleaning equipment and the electrostatic clamp; and

[0176] Remove the particles set on the electrostatic clamp.

[0177] 45. The method according to aspect 43 further includes a repeated contact step, a generation step, and a removal step to further remove particles from the electrostatic fixture to the mask stage cleaning apparatus.

[0178] While specific reference can be made herein to the use of lithography equipment in IC manufacturing, it should be understood that the lithography equipment described herein may have other applications, such as manufacturing integrated optical systems, guiding and detecting patterns for magnetic domain memory, flat panel displays, LCDs, thin-film magnetic heads, etc. Those skilled in the art will understand that in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered synonymous with the more general terms “substrate” or “target portion,” respectively. The substrate mentioned herein may be processed before or after exposure in, for example, a track or coating development system unit (typically a tool for applying a resist layer to the substrate and developing the exposed resist), a measurement unit, and / or an inspection unit. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Furthermore, the substrate may be processed more than once, for example to produce multilayer ICs, such that the term “substrate” as used herein may also refer to a substrate that includes multiple processed layers.

[0179] While the above description can be specifically referenced to the use of aspects in the context of optical lithography, it should be understood that aspects can be used in other applications (e.g., imprint lithography) and are not limited to optical lithography where circumstances permit. In imprint lithography, the morphology in a patterning apparatus defines a pattern produced on a substrate. The morphology of the patterning apparatus can be pressed into a resist layer supplied to the substrate, on which the resist is cured by applying electromagnetic radiation, heat, pressure, or a combination thereof. After the resist has cured, the patterning apparatus is removed from the resist, thereby leaving a pattern therein.

[0180] It should be understood that the wording or terminology used herein is for descriptive and not limiting purposes, and that the terminology or terminology used herein should be interpreted by one or more persons skilled in the art in accordance with the teachings herein.

[0181] As used herein, the term "substrate" describes the material to which a material layer is added. In some aspects, the substrate itself may be patterned, and the material added on top of the substrate may also be patterned, or the material may remain unpatterned.

[0182] The following examples are illustrative and not intended to limit aspects of this disclosure. Other suitable changes and adaptations to various conditions and parameters commonly encountered in the art and which will be apparent to those skilled in the art are within the spirit and scope of this disclosure.

[0183] While specific reference may be made herein to the use of devices and / or systems in the manufacture of ICs, it should be clearly understood that such devices and / or systems have many other possible applications. For example, they can be used in the manufacture of integrated optical systems, the guiding and detection patterning of magnetic domain memories, LCD panels, thin-film magnetic heads, etc. Those skilled in the art will understand that in the context of such alternative applications, any use of the terms “mask,” “wafer,” or “die” herein should be considered to be replaced by the more general terms “mask,” “substrate,” and “target portion,” respectively.

[0184] While specific aspects have been described above, it should be understood that these aspects may be practiced in other ways than those described. The description is not intended to limit the scope of the claims.

[0185] It should be understood that the Description of the Invention section, rather than the Summary of the Invention section, is intended to be used to interpret the claims. The Summary of the Invention section may set forth one or more, but not all, exemplary aspects contemplated by one or more of the inventors of this case, and is therefore not intended to limit the aspects and the appended claims in any way.

[0186] The foregoing has described aspects using functional constructs that illustrate the implementation of specified functions and their relationships. For ease of description, the boundaries of these functional constructs have been arbitrarily defined herein. Alternative boundaries can be defined by appropriately executing the specified functions and their relationships.

[0187] The foregoing description of a particular aspect will thus fully reveal the general nature of aspects: without departing from the general concept of aspects, others can readily modify and / or adapt such particular aspects for various applications by applying knowledge known to those skilled in the art, without excessive experimentation. Therefore, based on the teachings and instructions presented herein, such adaptations and modifications are intended to be within the meaning and scope of equivalents of the disclosed aspects.

[0188] The breadth and scope of these aspects should not be limited by any of the exemplary aspects described above, but should be defined solely by the following claims and their equivalents.

Claims

1. A cleaning device for a fixture in a photolithography apparatus, the device comprising: A substrate having a front side and a back side opposite to the front side; and A conductive layer is disposed on the front side of the substrate and configured to contact the clamp to dissipate charge on the clamp and remove particles on the clamp via an electrostatic field generated between the conductive layer and the clamp.

2. The device according to claim 1, wherein, The conductivity of the conductive layer is at least about 1 S / cm, 10 S / cm or 100 S / cm.

3. The device according to claim 1, wherein, The conductivity of the conductive layer is in the range of about 1 S / cm to about 600 S / cm, 10 S / cm to about 600 S / cm, or 100 S / cm to about 600 S / cm.

4. The device according to claim 1, wherein, The conductivity of the conductive layer is variable and configured to be adjusted to a desired value.

5. The device according to claim 1, wherein, The conductive layer comprises a conductive polymer.

6. The device according to claim 5, wherein, The conductive polymer includes polyaniline, poly(p-phenylene), polythiophene, polypyrrole, poly(p-styrene), trans-polyacetylene, or combinations thereof.

7. The device according to claim 5, wherein: The conductive polymer includes additives configured to alter the conductivity and / or mechanical properties of the conductive polymer; and The additives include carbon, graphite, carbon black, carbon nanotubes, carbon fullerene, metal particles, plasticizers, flame retardants, heat stabilizers, impact modifiers, antioxidants, colorants, lubricants, light stabilizers, quenchers, deacidifiers, pigments, antistatic agents, nucleating agents, abrasives, slip agents, or combinations thereof.

8. The device according to claim 5, wherein: The conductive polymer includes fillers configured to alter the conductivity and / or mechanical properties of the conductive polymer; and The filler includes organic materials, inorganic materials, polymeric materials, metallic materials, ceramic materials, or combinations thereof.

9. The device according to claim 5, wherein: The conductive polymer comprises a single layer; The conductive polymer comprises multiple layers; or The conductive polymer includes surface treatment and / or surface modification.

10. The device according to claim 1, further comprising a second conductive layer disposed between the conductive layer and the substrate, wherein: The stiffness of the conductive layer is lower than that of the second conductive layer; The conductivity of the second conductive layer is in the range of about 50 S / cm to about 850 S / cm; The second conductive layer comprises chromium nitride, titanium nitride, or carbon nitride; and The conductivity of the conductive layer is variable and configured to compensate for the conductivity of the second conductive layer, such that the total conductivity of the device is adjusted to a desired value.

11. The device according to claim 1, wherein, The cleaning equipment is a mask table cleaning equipment, and the fixture is a mask fixture.

12. A photolithography apparatus, comprising: An irradiation system configured as an irradiation pattern forming apparatus; A projection system configured to project an image from the patterning apparatus onto a patterned substrate; A mask stage, the mask stage being configured to support the pattern forming apparatus and the mask stage including a chuck and an electrostatic clamp including a plurality of protrusions; as well as A mask stage cleaning device, configured to dissipate charge on an electrostatic clamp and remove particles from the electrostatic clamp, the mask stage cleaning device comprising: A substrate having a front side and a back side opposite to the front side; and A conductive layer is disposed on the front side of the substrate and configured to contact the plurality of protrusions of the electrostatic clamp and remove particles on the electrostatic clamp via an electrostatic field generated between the conductive layer and the electrostatic clamp.

13. A method for forming a mask stage cleaning apparatus for removing particles from a mask stage in a photolithography apparatus, the method comprising: A conductive polymer having a conductivity of at least about 1 S / cm is formed on the front side of the substrate.

14. The method of claim 13, further comprising: The mask stage cleaning device is brought into contact with multiple protrusions of the electrostatic clamps of the mask stage; An electrostatic field is generated between the mask cleaning equipment and the electrostatic clamp. as well as Remove the particles located on the electrostatic clamp.

15. The method of claim 14, further comprising repeating the contact step, the generating step, and the removing step to further remove particles from the electrostatic fixture to the mask stage cleaning device.

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