Method of operating optoelectronic component, method of manufacturing optoelectronic component, optoelectronic component and lighting device

Abstract

A method of operating an optoelectronic component includes at least a pixel array having a plurality of optoelectronic semiconductor chips, a temperature sensor in thermal contact with the pixel array, and a driver circuit. First, a pixel array is activated. At the same time, a temperature sensor is used to read the first temperature. A first operating parameter of at least one of the optoelectronic semiconductor chips of the pixel array is determined. The first temperature and the first operating parameter are associated to establish a first data point. The operating parameter and the first temperature are compared to an operating model of the pixel array. If the operation parameter and the first temperature differ from the operation model by a preset first threshold value, the operation model is updated. An operational parameter of an optoelectronic semiconductor chip of the pixel array is measured and a temperature is calculated using an operational model.

Description

[0001] This invention relates to a method for operating a photoelectric component, a method for manufacturing a photoelectric component, a photoelectric component, and a lighting device.

[0002] This patent application claims priority to German Patent Application 10 2023 109 138.7, the disclosure of which is incorporated herein by reference.

[0003] Optoelectronic components having pixel arrays and driving circuitry for the pixel arrays are known in the prior art. The pixel array comprises optoelectronic semiconductor chips arranged in at least two dimensions. In operation, these pixels can be driven individually, particularly allowing images to be projected from the pixel array. These pixel arrays can be used, for example, in automotive headlights or active pixel projectors.

[0004] These optoelectronic components typically include temperature sensors to monitor the operating temperature of the pixels in a pixel array. At a given maximum temperature, partial damage to the pixel array can occur, and therefore, the power of the pixel array may decrease when the temperature measured by the temperature sensor exceeds a certain value, which can be referred to as the cutoff temperature. However, due to thermal conductivity and the fact that heat is generated directly at the pn junction of the pixel and needs to reach the temperature sensor, the cutoff temperature is lower than the maximum temperature to allow for thermal equilibrium. For some operating parameters of the pixel array, this may result in a decrease in power, even before the maximum temperature of the pn junction is reached.

[0005] The object of this invention is to provide an improved method for operating a photoelectric component. Another object of this invention is to provide an improved method for manufacturing a photoelectric component. A further object is to provide an improved photoelectric component and a lighting device having such a photoelectric component. These objects are achieved by the method for operating the photoelectric component, the method for manufacturing the photoelectric component, the photoelectric component, and the lighting device as described in the independent claims. The dependent claims specify advantageous embodiments.

[0006] According to a first aspect, the present invention relates to a method of operating an optoelectronic component. The optoelectronic component includes at least a pixel array having a plurality of optoelectronic semiconductor chips, a temperature sensor, and a driving circuit. Specifically, the pixel array may include a large number of pixels, and therefore includes optoelectronic semiconductor chips. The number of pixels may be about 25,000 or even more, particularly about 50,000 or even 100,000. Furthermore, the optoelectronic component may include other components such as a housing and / or a power supply. The temperature sensor is in thermal contact with the pixel array. To operate the optoelectronic component, the steps described below are performed. First, the pixel array is started. Simultaneously with starting the pixel array, a first temperature is read using the temperature sensor. This may be done within a predefined time span, wherein the predefined time span may be a few microseconds, particularly in the range of 50 microseconds, for example up to 20 microseconds. The predefined time span may be specifically selected such that the heat generated by the semiconductor chips remains low, such that the temperature of the pn junction of the semiconductor chips remains constant. Furthermore, a first operating parameter of at least one of the optoelectronic semiconductor chips in the pixel array is determined. Then, the first temperature and the first operating parameter are correlated to establish a first data point. Since the temperature of the pn junction of the semiconductor chip remains constant, the first data point can include the temperature of the first pn junction and the first operating parameters. The operating parameters and the first temperature are compared with the operating model of the pixel array. If the operating parameters and the first temperature differ from the operating model by a preset first threshold, the operating model is updated. Then, the operating parameters of the optoelectronic semiconductor chip of the pixel array are measured, and the temperature is calculated using the operating model.

[0007] The operating model can include regressions or formulas that correlate operating parameters with the temperature of the pn junction. The core idea of ​​the method for operating optoelectronic components is to update the operating model if the operating parameters and a first temperature differ from the operating model by a preset first threshold. If such an update has been performed, the updated model is used to calculate the temperature of the pn junction. The operating model is checked at each startup of the pixel array, and the differences can be accounted for in the operating model. Therefore, the temperature measurement of the pn junction is improved. The optoelectronic semiconductor chip can be an emitter.

[0008] According to a second aspect, the present invention relates to an optoelectronic component. The optoelectronic component includes at least a pixel array having a plurality of optoelectronic semiconductor chips, a temperature sensor, and a driving circuit. Specifically, the pixel array may include a large number of pixels, and therefore includes optoelectronic semiconductor chips. The number of pixels may be about 25,000 or even more, particularly about 50,000 or even 100,000. Furthermore, the optoelectronic component may include other components such as a housing and / or a power supply. The temperature sensor is in thermal contact with the pixel array. The driving circuit is configured to perform the operating method as described above. The driving circuit may include a central processing unit to perform the method steps. Additionally, the driving circuit may include control means for individually controlling the pixels of the pixel array, particularly by individually controlling the voltage, current, or power of the pixels.

[0009] According to a third aspect, the present invention relates to a lighting device having such a photoelectric component. The lighting device is particularly suitable for use as an automotive headlight or an active pixel projector.

[0010] According to a fourth aspect, the present invention relates to a method for manufacturing an optoelectronic component. In this method, a pixel array, a driving circuit, and a temperature sensor are arranged such that the temperature sensor is in thermal contact with the pixel array. Additionally, a model of the pixel array is established regarding the relationship between operating parameters and a minimum differential temperature. This model is then provided to the driving circuit.

[0011] In one embodiment of the operation method, the following steps are performed: The pixel array is turned off. Then, a preset time span is elapsed, and the method waits during this time span. A second temperature is then read using a temperature sensor. A second operating parameter is determined for at least one of the optoelectronic semiconductor chips in the pixel array. Specifically, one or more optoelectronic semiconductor chips may be used in this step, the same one used to determine the first operating parameter. The second temperature and the second operating parameter are correlated to establish a second data point. The second operating parameter and the second temperature are compared to an operation model of the pixel array. If the operating parameter and the second temperature differ from the operation model by a preset second threshold, the operation model is updated.

[0012] The preset time span can be set to achieve thermal equilibrium between the temperature sensor and one or more optoelectronic semiconductor chips in the pixel array. To determine the second operating parameter, one or more optoelectronic semiconductor chips can be re-energized for a short time, specifically a few milliseconds. With these additions to the method, the operating model can be adjusted for low temperatures using the first operating parameter, and for high temperatures using the second operating parameter. Therefore, the overall operating model is improved.

[0013] In one implementation of the operating method, the preset time span is five seconds or less, particularly three seconds or less, and especially in the range of one to two seconds. This allows for thermal equilibrium between the pn junction and the temperature sensor.

[0014] In one embodiment of the operating method, the first threshold and the second threshold are the same. This allows for improved determination of the operating model. In all embodiments, the first threshold and / or the second threshold may include a temperature value. If the temperature determined by the operating model for a given operating parameter differs from the temperature read from the temperature sensor by more than the threshold temperature, the operating model is adjusted.

[0015] In one embodiment of the operating method, one or more optoelectronic semiconductor chips in the pixel array are selected based on the illumination pattern of the pixel array. This selection may include choosing optoelectronic semiconductor chips that are typically illuminated during operation of the pixel array.

[0016] In one embodiment of the operating method, the power of the pixel array is reduced when the temperature calculated based on the measured operating parameters of the optoelectronic semiconductor chip exceeds a temperature threshold. Therefore, damage to the pixel array can be reduced or prevented. In another embodiment of the operating method, the power of the pixel array is reduced by means of a reduction in the drive current and / or drive voltage of the pixel array or by pulse width modulation.

[0017] In one embodiment of the operation method, the operation model of the pixel array is stored in the memory of the driving circuit and can be read from the memory. The storage of the operation model can specifically occur when the operation model has been updated.

[0018] In one embodiment of the operating method, the operating parameters include current or voltage supplied to at least one of the optoelectronic semiconductor chips in the pixel array. Specifically, the relationship between temperature and current or voltage can be used in the operating model.

[0019] In one implementation of the operation method, a first data point is established each time the pixel array is started, or a first data point is established each time the pixel array is started and a second data point is established each time the pixel array is turned off. A predefined number of first data points, or a predefined number of first data points and a predefined number of second data points, are used to calculate the operation model. This allows the operation model to be continuously updated over the lifetime of the pixel array.

[0020] In one implementation of the method, a predefined number of first data points, or a predefined number of first data points and a predefined number of second data points, are stored in a shift register. This allows for simple implementation of the method because older data points can be shifted from the shift register.

[0021] In one embodiment of the operating method, at least one of the optoelectronic semiconductor chips of the pixel array is selected according to the desired illumination pattern of the pixel array.

[0022] In one embodiment of the optoelectronic component, the driving circuit includes a memory. An operating model is stored in the memory. In another embodiment of the optoelectronic component, the memory includes a shift register. A predefined number of first data points, or a predefined number of first data points and a predefined number of second data points, can be stored in the shift register.

[0023] In one embodiment of the optoelectronic component, the memory is a read-only memory. In another embodiment of the optoelectronic component, a projection lens is also included.

[0024] In one embodiment of the manufacturing method, the operating model is determined experimentally. The pixel array is started and stopped several times. A first data point is established each time the pixel array is started, or a first data point is established each time the pixel array is started and a second data point is established each time the pixel array is stopped. The first data point or the first and second data points are used to calculate the operating model. Using this method, an operating model can be established during the manufacturing of optoelectronic components.

[0025] The nature, features, and advantages of the invention described above, as well as the ways in which they are implemented, become clearer and easier to understand in conjunction with the following description of exemplary embodiments, which will be explained in more detail with reference to the accompanying drawings. In each case, the following examples are illustrated schematically:

[0026] Figure 1 Optoelectronic components;

[0027] Figure 2 lighting fixtures;

[0028] Figure 3 A flowchart illustrating the method of operating optoelectronic components;

[0029] Figure 4 Operational model of optoelectronic components; and

[0030] Figure 5 A flowchart of a method for manufacturing optoelectronic components.

[0031] Figure 1 An optoelectronic component 100 is shown, comprising a pixel array 110 having a plurality of optoelectronic semiconductor chips 111, a temperature sensor 120, and a driving circuit 130. The temperature sensor 120 is in thermal contact with the pixel array 110. The driving circuit 130 is configured to perform a method of operating the optoelectronic component, which will be described in further detail below.

[0032] Specifically, pixel array 110 may include a large number of pixels 112, and therefore includes photoelectric semiconductor chips 111. For clarity, not all pixels have reference numeral 112, and not all photoelectric semiconductor chips have reference numeral 111. The number of pixels 112 is... Figure 1 The number is 49, but for the optoelectronic component 100, the number of pixels 112 can be approximately 25,000 or even more, particularly approximately 50,000 or even 100,000. Furthermore, the optoelectronic component 100 may include other components such as a housing and / or a power supply, which are described above in... Figure 1 The image is not shown, but can be configured by those skilled in the art. Temperature sensor 120 is shown as part of drive circuit 130. However, in embodiments not shown, temperature sensor 120 may be arranged between pixel array 110 and drive circuit 130 or on one side of pixel array 130. Drive circuit 130 may include central processing unit 131 to perform method steps for operating optoelectronic component 100. Additionally, drive circuit 130 may include control means for individually controlling pixels 112 of pixel array 110, particularly by individually controlling the voltage, current, or power of pixels. This control means may also be included in processing unit 131.

[0033] The optoelectronic component 100 also includes an optional projection lens 140. The projection lens 140 may include a number of projection lenses, particularly up to ten lenses, and can be used to project the image provided by the pixel array 110 onto a larger area.

[0034] The pixel array 110 includes at least two-dimensionally arranged optoelectronic semiconductor chips 111. In operation, pixels 112 can be driven individually, particularly allowing images to be projected from the pixel array 110. The optoelectronic component 100 having the pixel array 110 can be used, for example, in automotive headlights or active pixel projectors. Pixels 112 can have a uniform emission spectrum, particularly emitting white light. However, several pixels 112, particularly three pixels 112, can also be combined to form an RGB emitting unit.

[0035] Figure 2 A lighting device 150 is shown. The lighting device 150 includes... Figure 1 The photoelectric component 100. In this embodiment, the projection objective 140 is depicted as two projection lenses 141. Additionally, in Figure 2 The image shows a light cone 151 emitted from the lighting device 150.

[0036] Figure 3 The operation is shown if Figure 1A flowchart 160 describes a method for establishing an optoelectronic component 100. In a first step 161, the pixel array 110 is activated. Simultaneously with the activation of the pixel array 110, a first temperature is read out using a temperature sensor 120 in a second step 162. This can be included within a predefined time span, which can be several microseconds, particularly in the range of 50 microseconds, for example, up to 20 microseconds. The predefined time span can be specifically selected so that the heat generated by the semiconductor chip 111 remains low, such that the temperature of the pn junction of the semiconductor chip remains constant. In a third step 163, a first operating parameter is determined for at least one of the optoelectronic semiconductor chips 111 in the pixel array 110. In a subsequent fourth step 164, the first temperature and the first operating parameter are correlated to establish a first data point. Since the temperature of the pn junction of the semiconductor chip 111 remains constant, the first data point can include the temperature of the first pn junction and the first operating parameter. In a fifth step 165, the operating parameter and the first temperature are compared with an operating model of the pixel array 110. If the operating parameters and the first temperature differ from the operating model by a preset first threshold, the operating model is updated in step 666. After step 666, or if the difference between the operating parameters and the first temperature and the operating model is less than the preset first threshold, the operating parameters of the optoelectronic semiconductor chip 111 of the pixel array 110 are measured directly after step 5165 in step 7167, and the temperature is calculated using the operating model.

[0037] The operating model can include regressions or formulas that correlate operating parameters with the temperature of the pn junction. The core idea of ​​the method for operating the optoelectronic component 100 is to update the operating model if the operating parameters and a first temperature differ from the operating model by a preset first threshold. If such an update has been performed, the updated model is used to calculate the temperature of the pn junction. The operating model is checked at each startup of the pixel array 110, and the differences can be accounted for in the operating model. Therefore, the temperature measurement of the pn junction is improved.

[0038] Method steps 161, 162, 163, 164, 165, 166, and 167 can be executed by the driving circuit 130, and particularly by the central processing unit 131. Specifically, the sixth method step 166 defines the method according to the invention. In methods of operating the optoelectronic component 100 known in the prior art, the operating model is not updated using the first data point generated when the pixel array 110 is started.

[0039] In one implementation, the seventh step 167 is performed a number of times, particularly in a cyclic manner. The seventh step 167 can be performed throughout the entire operation of the optoelectronic component 100.

[0040] In one implementation of the operating method, optionally, the following can be performed: Figure 3 The following additional steps are indicated. In step 8, 168, the pixel array 110 is turned off. Then, in step 9, a preset time span elapses, and the method waits during this time. Then, in step 10, 170, a second temperature is read using temperature sensor 120. Simultaneously with step 10, 171, a second operating parameter is determined for at least one of the photoelectric semiconductor chips 111 of the pixel array 110. Specifically, one or more photoelectric semiconductor chips 111 identical to those used to determine the first operating parameter may be used in this step. In step 12, 172, the second temperature and the second operating parameter are correlated to establish a second data point. In step 13, 173, the second operating parameter and the second temperature are compared with an operating model of the pixel array. If the operating parameter and the second temperature differ from the operating model by a preset second threshold, the operating model is updated in step 14, 174. Otherwise, the operating model is not updated, and step 14, 174, is not performed.

[0041] The preset time span of step 169 can be set to achieve thermal equilibrium between the temperature sensor 120 and one or more optoelectronic semiconductor chips 111 in the pixel array 110. To determine the second operating parameter, one or more optoelectronic semiconductor chips 111 can be re-energized for a short time, specifically a few milliseconds. With these additions to the method, the operating model can be adjusted for low temperatures using the first operating parameter, and for high temperatures using the second operating parameter. Therefore, the overall operating model is improved.

[0042] In one embodiment of the operating method, the preset time span is five seconds or less, particularly three seconds or less, and particularly in the range of one to two seconds. This allows for thermal equilibrium between the pn junction and the temperature sensor 120.

[0043] In one embodiment of the operation method, the operation model of the pixel array 110 is stored in the memory 132 of the driving circuit 130. The model can be read from the memory 132. In an embodiment of the optoelectronic component 100, the driving circuit 130 includes, as shown in the figure below. Figure 1 The memory 132 shown is a read-only memory 133. Alternatively, the drive circuit 130 may be configured to read the model from an external memory located in an external device.

[0044] In one embodiment of the operating method, the first threshold and the second threshold are the same. This allows for improved determination of the operating model. In all embodiments, the first threshold and / or the second threshold may include a temperature value. If the temperature determined by the operating model for a given operating parameter differs from the temperature read from the temperature sensor by more than the threshold temperature, the operating model is adjusted.

[0045] In one embodiment of the operation method, one or more optoelectronic semiconductor chips 111 of the pixel array 110 are selected according to the illumination pattern of the pixel array 110. This selection may include selecting optoelectronic semiconductor chips 111 that are normally illuminated during operation of the pixel array 110.

[0046] In one embodiment of the operating method, the power of the pixel array 110 is reduced when the temperature calculated based on the measured operating parameters of the optoelectronic semiconductor chip 111 exceeds a temperature threshold. Therefore, damage to the pixel array 110 can be reduced or prevented. In another embodiment of the operating method, the power of the pixel array 110 is reduced by means of a reduction in the drive current and / or drive voltage of the pixel array 110 or by pulse width modulation.

[0047] In one embodiment of the operating method, the operating parameters include the current or voltage supplied to at least one of the optoelectronic semiconductor chips 111 of the pixel array 110. Specifically, the relationship between temperature and current or voltage can be used in the operating model.

[0048] In one embodiment of the operation method, a first data point is established each time the pixel array 110 is started, or a first data point is established each time the pixel array 110 is started and a second data point is established each time the pixel array 110 is turned off. A predefined number of first data points or a predefined number of first data points and a predefined number of second data points are used to calculate the operation model. This allows the operation model to be continuously updated over the lifetime of the pixel array.

[0049] In one embodiment of the operation method, a predefined number of first data points, or a predefined number of first data points and a predefined number of second data points, are stored in shift register 134. This shift register 134... Figure 1 As shown in the diagram. This allows for a simple implementation of the method because older data points can be shifted from shift register 134.

[0050] In one embodiment of the operation method, at least one of the optoelectronic semiconductor chips 111 of the pixel array 110 is selected according to the intended illumination pattern of the pixel array 110.

[0051] Figure 4Figure 180 shows the operating parameters 181 of the optoelectronic component 100 plotted relative to a temperature 182 of the optoelectronic component 100. Furthermore, Figure 180 includes an operating model 183 (dashed line), which allows the operating parameters 181 to be correlated with the temperature 182 of the pn junction. Figure 180 also depicts several first data points 184 established when the optoelectronic component 100 is turned on and second data points 185 established when the optoelectronic component 100 is turned off. Since the first data points 184 and second data points 185 differ from the operating model 183, an updated operating model 186 (dotted line) is also depicted. References can be used... Figure 3 The described method is used to compute the updated operational model 186.

[0052] Operating parameter 181 can be the forward voltage of the photoelectric semiconductor chip 111 of the pixel array 110. In this case, the photoelectric semiconductor chip 111 can be driven by a fixed current, and the forward voltage can be related to the temperature of the pn junction of the photoelectric semiconductor chip 111. Alternatively, operating parameter 181 can be the current of the photoelectric semiconductor chip 111 of the pixel array 110. In this case, the photoelectric semiconductor chip 111 can be driven by a fixed voltage, and the current can be related to the temperature of the pn junction of the photoelectric semiconductor chip 111.

[0053] Figure 5 A flowchart 190 illustrates a method for manufacturing an optoelectronic component 100. In this method, in a first step 191, a pixel array 110, a driving circuit 130, and a temperature sensor 120 are provided, such that the temperature sensor 120 is in thermal contact with the pixel array 110. These can be configured to form... Figure 1 The photoelectric components 100 are arranged in a manner that allows for their arrangement. In the second step 192, an operational model of the pixel array 110 is established, relating the operating parameters to the temperature. Then, in the third method step 193, this model is provided to the driving circuit 130, specifically by storing the model in the memory 132.

[0054] In one implementation of the manufacturing method, the operational model is determined experimentally. This can be achieved by using, for example, a reference model. Figure 4 The described method is used to accomplish this. The pixel array 110 is started and stopped several times. A first data point 184 is established each time the pixel array 110 is started, or a first data point 184 is established each time the pixel array 110 is started and a second data point 185 is established each time the pixel array 110 is stopped. The first data point 184 or the first data point 184 and the second data point 185 are used to calculate the operating model. Using this method, an operating model can be established during the manufacturing of the optoelectronic component 100.

[0055] Although the invention has been described and illustrated in detail with reference to preferred embodiments, the invention is not limited to the disclosed examples, and those skilled in the art can derive other modifications without departing from the scope of protection of the invention.

[0056] List of reference numerals

[0057] 100 optoelectronic components

[0058] 110 pixel array

[0059] 111 Optoelectronic Semiconductor Chip

[0060] 112 pixels

[0061] 120 temperature sensor

[0062] 130 drive circuit

[0063] 131 Central Processing Unit

[0064] 132 memory

[0065] 133 Read-Only Memory

[0066] 134 shift register

[0067] 140 projection lens

[0068] 141 projection lens

[0069] 150 lighting fixtures

[0070] 151 light cone

[0071] 160 Flowchart

[0072] 161 First Step

[0073] 162 Second Step

[0074] 163 Third step

[0075] 164 Fourth Step

[0076] 165 Fifth Step

[0077] Step 6 of 166

[0078] 167 Seventh Step

[0079] Step 8 of 168

[0080] 169 Ninth Step

[0081] Step 10 of 170

[0082] 171 Eleventh Step

[0083] 172 Step Twelfth

[0084] 173 Thirteenth Step

[0085] 174 Step Fourteen

[0086] 180 images

[0087] 181 Operating Parameters

[0088] 182 temperature

[0089] 183 Operation Model

[0090] 184 First data point

[0091] 185 Second Data Point

[0092] 186 Updated Operation Model

[0093] 190 Flowchart

[0094] 191 First Step

[0095] 192 Second Step

[0096] 193 Third Step

Claims

1. A method for operating a photoelectric component (100), wherein, The optoelectronic component (100) includes a pixel array (110) having multiple optoelectronic semiconductor chips (111), a temperature sensor (120), and a driving circuit (130), wherein the temperature sensor (120) is in thermal contact with the pixel array (110), and the method includes the following steps: - Start the pixel array (110); - The first temperature is read out using the temperature sensor (120) while the pixel array (110) is being activated; - Determine a first operating parameter for at least one of the optoelectronic semiconductor chips (111) of the pixel array (110); - Associate the first temperature with the first operating parameter to establish a first data point (184); - Compare the operating parameters and the first temperature with the operating model (183) of the pixel array (110); - If the operating parameters and the first temperature differ from the operating model (183) by a preset first threshold, then update the operating model (186). - Measure the operating parameters of the optoelectronic semiconductor chip (111) of the pixel array (110) and calculate the temperature using the operating model (183, 186).

2. The method according to claim 1, further comprising: - Turn off the pixel array (110); - Wait for the preset time span; - The second temperature is read using the temperature sensor (120); - Determine a second operating parameter for at least one of the optoelectronic semiconductor chips (111) of the pixel array (110); - Associate the second temperature with the second operating parameter to establish a second data point (185); - Compare the second operating parameters and the second temperature with the operating model of the pixel array (110); - If the operating parameters and the second temperature differ from the operating model (183) by a preset second threshold, then update the operating model (186).

3. The method according to claim 2, wherein, The preset time span is five seconds or less, particularly tree seconds or less, especially in the range of one to two seconds.

4. The method according to any one of claims 1 to 3, wherein, The first threshold and the second threshold are the same.

5. The method according to any one of claims 1 to 4, wherein, One or more of the optoelectronic semiconductor chips (111) of the pixel array (110) are selected according to the illumination pattern of the pixel array (110).

6. The method according to any one of claims 1 to 5, further comprising reducing the power of the pixel array (110) when the temperature calculated based on the measured operating parameters of the optoelectronic semiconductor chip (111) exceeds a temperature threshold.

7. The method according to claim 6, wherein, The power of the pixel array (110) is reduced by means of a reduction in the drive current and / or drive voltage of the pixel array (110) or by pulse width modulation.

8. The method according to any one of claims 1 to 7, wherein, The operation model of the pixel array (110) is stored in the memory (132) of the driving circuit (130) and can be read out from the memory (132).

9. The method according to any one of claims 1 to 8, wherein, The operating parameters include the current or voltage supplied to at least one of the optoelectronic semiconductor chips (111) in the pixel array (110).

10. The method according to any one of claims 1 to 9, wherein, A first data point (184) is established each time the pixel array (110) is started, or a first data point (184) is established each time the pixel array (110) is started and a second data point (185) is established each time the pixel array (110) is turned off, wherein a predefined number of first data points (184) or a predefined number of first data points (184) and a predefined number of second data points (185) are used to calculate the operation model (183, 186).

11. The method according to claim 10, wherein, The predefined number of first data points (184) or the predefined number of first data points (184) and the predefined number of second data points (185) are stored in the shift register (134).

12. The method according to any one of claims 1 to 11, wherein, At least one of the optoelectronic semiconductor chips (111) of the pixel array (110) is selected according to the expected lighting pattern of the pixel array (110).

13. An optoelectronic component (100) comprising a pixel array (110) having a plurality of optoelectronic semiconductor chips (111), a temperature sensor (120), and a driving circuit (130), wherein, The temperature sensor (120) is in thermal contact with the pixel array (110), wherein the driving circuit (130) is configured to perform the method according to any one of claims 1 to 12.

14. The photoelectric component (100) according to claim 13, wherein, The driving circuit (130) includes a memory (132), wherein the operation model is stored in the memory (132).

15. The photoelectric component (100) according to claim 14, wherein, The memory (132) includes a shift register (134), wherein a predefined number of first data points (184) or a predefined number of first data points (184) and a predefined number of second data points (185) can be stored in the shift register (134).

16. The photoelectric component (100) according to claim 14 or 15, wherein, The memory (132) is a read-only memory (133).

17. The photoelectric component (100) according to any one of claims 13 to 16 further includes a projection lens (140).

18. A lighting device (150) comprising a photoelectric component (100) according to any one of claims 13 to 17.

19. A method for manufacturing an optoelectronic component (100) according to any one of claims 13 to 17, the method comprising the following steps: - Provide the pixel array (110), the driving circuit (130) and the temperature sensor (120), wherein the temperature sensor (120) is in thermal contact with the pixel array (110); - Establish the operation model (183) of the pixel array (110) regarding the relationship between the operation parameters (181) and the temperature (182). - Provide the operating model (183) for the drive circuit (130).

20. The method according to claim 19, wherein, The operation model (183) is determined experimentally, wherein the pixel array (110) is started and stopped several times, wherein a first data point (184) is established each time the pixel array (110) is started, or a first data point (184) is established each time the pixel array (110) is started and a second data point (185) is established each time the pixel array (110) is stopped, and wherein the first data point (184) or the first data point (184) and the second data point (185) are used to calculate the operation model (183, 186).

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