Plasma processing apparatus

Abstract

The plasma processing apparatus includes: an outer chamber including an outer sidewall, the outer sidewall including a first outer transparent window; a substrate support part disposed in the inner space of the outer chamber; and a replaceable inner chamber disposed in the inner space of the outer chamber, the replaceable inner chamber including: an upper plate extending in the horizontal direction above the substrate support portion; an annular bottom plate extending in an outward direction from a sidewall of the substrate support; and an inner side wall extending in the longitudinal direction so as to connect the outer periphery of the upper plate and the outer periphery of the annular bottom plate, the inner side wall including a first inner side transparent window disposed opposite the first outer side transparent window; and a measuring machine configured to optically measure a state of the replaceable inner chamber via the first outer transparent window and the first inner transparent window.

Description

Technical Field

[0001] Exemplary embodiments of this disclosure relate to plasma processing apparatus. Background Technology

[0002] In plasma processing apparatus, there exists a technique described in Patent Document 1 that allows a second chamber to be disposed within a first chamber and to be moved outside the first chamber.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2022-66828 Summary of the Invention

[0006] This disclosure provides a technique for externally confirming the state of an inner chamber in a plasma processing apparatus.

[0007] A plasma processing apparatus in an exemplary embodiment of this disclosure includes: an outer chamber including an outer sidewall defining an internal space, the outer sidewall including a first outer transparent window; a substrate support disposed within the internal space of the outer chamber and having a substrate support surface; a replaceable inner chamber disposed within the internal space of the outer chamber, the replaceable inner chamber including: an upper plate extending horizontally above the substrate support; an annular bottom plate extending outwardly from the sidewall of the substrate support; and an inner sidewall extending longitudinally to connect the outer periphery of the upper plate and the outer periphery of the annular bottom plate, the substrate support, the upper plate, the annular bottom plate and the inner sidewall defining a plasma processing space, the inner sidewall including a first inner transparent window configured to face the first outer transparent window; and a measuring machine configured to optically measure the state of the replaceable inner chamber via the first outer transparent window and the first inner transparent window.

[0008] Invention Effects

[0009] According to an exemplary embodiment of this disclosure, a technique is provided that enables external confirmation of the state of an inner chamber in a plasma processing apparatus. Attached Figure Description

[0010] Figure 1 This is a diagram illustrating an example of the configuration of a plasma processing system.

[0011] Figure 2 This is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing device.

[0012] Figure 3 This is a partially enlarged view illustrating a component example of a plasma processing apparatus.

[0013] Figure 4 This is a diagram used to illustrate an example of a gate valve structure.

[0014] Figure 5 This is a diagram used to illustrate an example of a gate valve structure.

[0015] Figure 6 This is a flowchart illustrating an example of the process for confirming the state of the inner chamber.

[0016] Figure 7 This is a partially enlarged view used to illustrate other configuration examples of a portion of a plasma processing apparatus.

[0017] Figure 8 This is a diagram illustrating an example of the configuration of the plasma processing apparatus in the second embodiment.

[0018] Figure 9 This is a diagram illustrating other configuration examples of the plasma processing apparatus in the second embodiment.

[0019] Figure 10 This is a diagram illustrating an example of the configuration of the plasma processing apparatus in the third embodiment.

[0020] Figure 11 This is a diagram illustrating other configuration examples of the plasma processing apparatus in the third embodiment.

[0021] Explanation of reference numerals in the attached figures

[0022] 1…Plasma processing apparatus, 10…Cavity, 11…Substrate support, 100…Outer chamber, 100s…Outer sidewall, 100o…First opening, 100v…Gate valve, 101…First outer transparent window, 100p…Second opening, 100g…Gate valve, 200…Inner chamber, 200s…Inner sidewall, 200b…Annular bottom plate, 200c…Upper plate, 201…First inner transparent window, 300…Measuring machine, S…Plasma processing space, W…Substrate. Detailed Implementation

[0023] The following describes various embodiments of this disclosure.

[0024] In one exemplary embodiment, a plasma processing apparatus is provided, comprising: an outer chamber including an outer sidewall defining an internal space at least by the outer sidewall, the outer sidewall including a first outer transparent window; a substrate support disposed within the internal space of the outer chamber and having a substrate support surface; a replaceable inner chamber disposed within the internal space of the outer chamber, the replaceable inner chamber including: an upper plate extending horizontally above the substrate support; an annular bottom plate extending outwardly from the sidewall of the substrate support; and an inner sidewall extending longitudinally to connect the outer periphery of the upper plate and the outer periphery of the annular bottom plate, the substrate support, the upper plate, the annular bottom plate and the inner sidewall defining a plasma processing space, the inner sidewall including a first inner transparent window configured to face the first outer transparent window; and a measuring machine configured to optically measure the state of the replaceable inner chamber via the first outer transparent window and the first inner transparent window.

[0025] In one exemplary embodiment, the outer sidewall has an opening, and the outer chamber includes a gate valve configured to open and close the opening, the gate valve including a first outer transparent window.

[0026] In one exemplary embodiment, the outer sidewall includes a reflector disposed on the opposite side of the first outer transparent window, the inner sidewall includes a second inner transparent window disposed opposite to the reflector and on the opposite side of the first inner transparent window, and the measuring machine includes a light source disposed near the first outer transparent window and a detector disposed near the first outer transparent window, configured to optically measure the state of a replaceable inner chamber via the first outer transparent window, the first inner transparent window, the second inner transparent window and the reflector.

[0027] In one exemplary embodiment, the outer sidewall includes a first opening and a second opening located on the opposite side of the first opening, and the outer chamber includes a first gate valve configured to open and close the first opening and a second gate valve configured to open and close the second opening. The first gate valve includes a first outer transparent window, and the second gate valve includes a reflector.

[0028] In one exemplary embodiment, the outer sidewall includes a second outer transparent window disposed on the opposite side of the first outer transparent window, and the inner sidewall includes a second inner transparent window disposed opposite to the second outer transparent window and on the opposite side of the first inner transparent window. The measuring machine includes a light source disposed near the first outer transparent window and a detector disposed near the second outer transparent window, and optically measures the state of the replaceable inner chamber via the first outer transparent window, the first inner transparent window, the second inner transparent window and the second outer transparent window.

[0029] In one exemplary embodiment, the outer sidewall has a first opening and a second opening located on the opposite side of the first opening. The outer chamber includes a first gate valve configured to open and close the first opening and a second gate valve configured to open and close the second opening. The first gate valve includes a first outer transparent window, and the second gate valve includes a second outer transparent window.

[0030] In one exemplary embodiment, a plasma processing apparatus is provided, comprising: an outer chamber including an outer sidewall defining an internal space at least by the outer sidewall, the outer sidewall including a first outer transparent window; a substrate support disposed within the internal space of the outer chamber and having a substrate support surface; a replaceable inner chamber disposed within the internal space of the outer chamber, the replaceable inner chamber including: an upper plate extending horizontally above the substrate support; an annular bottom plate extending outwardly from the sidewall of the substrate support; and an inner sidewall extending longitudinally to connect the outer periphery of the upper plate and the outer periphery of the annular bottom plate, the substrate support, the upper plate, the annular bottom plate and the inner sidewall defining a plasma processing space, the inner sidewall having at least one first through-hole facing the first outer transparent window; and a measuring machine configured to optically measure the state of the replaceable inner chamber via the first outer transparent window and the at least one first through-hole.

[0031] In one exemplary embodiment, the outer sidewall has an opening, and the outer chamber includes a gate valve configured to open and close the opening, the gate valve including a first outer transparent window.

[0032] In one exemplary embodiment, the outer sidewall includes a reflector disposed on the opposite side of the first outer transparent window, and the inner sidewall has at least one second through hole facing the reflector and located on the opposite side of at least one first through hole. The measuring machine includes a light source disposed near the first outer transparent window and a detector disposed near the first outer transparent window, and optically measures the state of the replaceable inner chamber via the first outer transparent window, at least one first through hole, at least one second through hole and the reflector.

[0033] In one exemplary embodiment, the outer sidewall has a first opening and a second opening located on the opposite side of the first opening. The outer chamber includes a first gate valve configured to open and close the first opening and a second gate valve configured to open and close the second opening. The first gate valve includes a first outer transparent window, and the second gate valve includes a reflector.

[0034] In one exemplary embodiment, the outer sidewall includes a second outer transparent window disposed on the opposite side of the first outer transparent window, and the inner sidewall has at least one second through hole facing the second outer transparent window and located on the opposite side of at least one first through hole. The measuring machine includes a light source disposed near the first outer transparent window and a detector disposed near the second outer transparent window, and optically measures the state of the replaceable inner chamber via the first outer transparent window, at least one first through hole, at least one second through hole and the second outer transparent window.

[0035] In one exemplary embodiment, the outer sidewall has a first opening and a second opening located on the opposite side of the first opening. The outer chamber includes a first gate valve configured to open and close the first opening and a second gate valve configured to open and close the second opening. The first gate valve includes a first outer transparent window, and the second gate valve includes a second outer transparent window.

[0036] In one exemplary embodiment, a plasma processing apparatus is provided, comprising: an outer chamber including an outer sidewall defining an internal space at least by the outer sidewall, the outer sidewall including a first outer transparent window; a substrate support disposed within the internal space of the outer chamber and having a substrate support surface; and a replaceable inner chamber disposed within the internal space of the outer chamber, the replaceable inner chamber including: an upper plate extending horizontally above the substrate support; an annular bottom plate extending outwardly from the sidewall of the substrate support; and an inner sidewall extending longitudinally to connect the outer periphery of the upper plate and the outer periphery of the annular bottom plate, wherein the substrate support, the upper plate, the annular bottom plate, and the inner sidewall define a plasma processing space, the inner sidewall including a first inner transparent window configured to face the first outer transparent window.

[0037] In one exemplary embodiment, the outer sidewall has an opening, and the outer chamber includes a gate valve configured to open and close the opening, the gate valve including a first outer transparent window.

[0038] In one exemplary embodiment, the outer sidewall includes a reflector disposed on the opposite side of the first outer transparent window, and the inner sidewall includes a second inner transparent window disposed opposite to the reflector and on the opposite side of the first inner transparent window.

[0039] In one exemplary embodiment, the outer sidewall includes a second outer transparent window disposed on the opposite side of the first outer transparent window, and the inner sidewall includes a second inner transparent window disposed on the opposite side of the first inner transparent window and facing the second outer transparent window.

[0040] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. Furthermore, the same or identical elements will be labeled with the same symbols in the drawings, and repeated descriptions will be omitted. Unless otherwise specified, positional relationships such as up, down, left, and right will be described based on the positional relationships shown in the drawings. The dimensions in the drawings are not actual scales, and actual scales are not limited to the scales shown.

[0041] (First Implementation)

[0042] <An example of plasma processing>

[0043] Figure 1 This is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 160 described later, and the gas outlet is connected to the exhaust device 700 described later. The substrate support 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0044] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied to the plasma processing space. The plasma generated in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR), helicon wave plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units, including alternating current (AC) plasma generation units and direct current (DC) plasma generation units, can also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0045] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 can be configured to control the various elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The control unit 2 may also include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1 from the storage unit 2a2. The medium may be various storage media readable by the computer 2a and may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may also be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may also communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0046] Hereinafter, an example of the configuration of a capacitively coupled plasma processing apparatus, which is an example of plasma processing apparatus 1, will be described. Figure 2 This is a diagram illustrating a configuration example of the capacitively coupled plasma processing device 1. Figure 3 This is a partially enlarged view illustrating a configuration example of a part of the plasma processing apparatus 1.

[0047] In one implementation, such as Figure 2 As shown, the plasma processing apparatus 1 includes an outer chamber 100, a replaceable inner chamber 200, a substrate support 11, and a measuring machine 300. The outer chamber 100 and the inner chamber 200 are examples of the plasma processing chamber 10 described above.

[0048] In one embodiment, the outer chamber 100 may provide an internal space. The outer chamber 100 may be formed of a metallic conductor such as aluminum. The outer chamber 100 may be electrically grounded.

[0049] In one embodiment, the outer chamber 100 includes an outer sidewall 100s, a upper portion 100u, and a bottom portion 100f. The outer sidewall 100s may have a generally cylindrical shape. The central axis of the outer sidewall 100s extends in a vertical direction. Figure 2The axis can be represented as AX. The internal space of the outer chamber 100 is defined by the outer sidewall 100s, the upper part 100u, and the bottom 100f. The outer sidewall 100s may be provided with a second opening 100p. The internal space of the outer chamber 100 can be connected to the internal space of a transfer module disposed outside the outer chamber 100 via the second opening 100p. The second opening 100p can be opened and closed by a gate valve 100g. The substrate W can be transferred between the internal space of the outer chamber 100 and the outside of the outer chamber 100 via the second opening 100p.

[0050] In one embodiment, the outer sidewall 100s may be provided with a first opening 100o. The first opening 100o may be configured to face a second opening 100p. The first opening 100o may be sized to allow passage through the inner chamber 200. The interior space of the outer chamber 100 is connected to the interior space of the conveying module via the first opening 100o. The first opening 100o may be opened and closed by a gate valve 100v. The inner chamber 200 may be conveyed between the interior space of the outer chamber 100 and the outside via the first opening 100o.

[0051] In one embodiment, a portion of the outer sidewall 100s may be formed by a dual structure consisting of an inner sidewall 100i and an outer sidewall 100e. A space 100q may be provided between the inner sidewall 100i and the outer sidewall 100e. A first opening 100o may be formed on the inner sidewall 100i and the outer sidewall 100e. A gate valve 100v may be provided along the inner sidewall 100i to open and close the first opening 100o.

[0052] In one embodiment, the gate valve 100v may include a first outer transparent window 101. The first outer transparent window 101 may be made of glass, resin, or the like. Figure 4 As shown, the gate valve 100v may have a valve body 110 capable of closing the first opening 100o and a support rod 111 that allows the valve body 110 to move up and down. A first outer transparent window 101 may be disposed integrally with the valve body 110. Figure 5 As shown, the first outer transparent window 101 can be configured as part of the valve body 110. The first outer transparent window 101 can be divided into multiple parts.

[0053] In one implementation method Figure 2 The upper part 100u shown may have a circular plate shape with the plate surface facing up and down. The upper part 100u may extend from the upper end of the outer sidewall 100s in a horizontal direction orthogonal to the axis AX. An opening may be provided in the area where the upper part 100u intersects the axis AX.

[0054] In one embodiment, the outer chamber 100 may further include a movable portion 100m. The movable portion 100m may be part of the outer chamber 100 or not. The movable portion 100m may be disposed between the upper portion 100u of the outer chamber 100 and the inner chamber 200. The movable portion 100m may be configured to be movable upward and downward within the outer chamber 100.

[0055] In one embodiment, the plasma processing apparatus 1 may further include a lifting mechanism 120. The lifting mechanism 120 allows the movable portion 100m to move upwards and downwards. The lifting mechanism 120 may include a drive device 120d and a shaft 120s. The movable portion 100m may be fixed to the shaft 120s. The shaft 120s may extend upwards from the movable portion 100m through an opening in the upper portion 100u. The drive device 120d may be located outside the outer chamber 100. The drive device 120d allows the shaft 120s to move upwards and downwards. The drive device 120d may include a motor. The movable portion 100m can move upwards and downwards by moving the shaft 120s.

[0056] In one embodiment, the plasma processing apparatus 1 may further include a bellows 140 that can extend and retract freely. The bellows 140 may be disposed between the movable part 100m and the upper part 100u. The lower end of the bellows 140 may be fixed to the movable part 100m. The upper end of the bellows 140 may be fixed to the upper part 100u. The bellows 140 can separate the internal space of the outer chamber 100 located on the outside of the bellows 140 from the external space of the outer chamber 100 connected to the inside of the bellows 140.

[0057] In one embodiment, the movable part 100m may include a first component 100a and a second component 100b. The first component 100a and the second component 100b may be fixed to each other. The first component 100a may have a generally circular plate shape. The first component 100a may be formed of a conductor such as aluminum. The first component 100a may form an upper electrode in the plasma processing apparatus 1. The second component 100b may have a generally cylindrical shape. The second component 100b may extend along the outer periphery of the first component 100a. The second component 100b may have an upper plate with its plate surface facing upward above the first component 100a. The lower end of the bellows 140 may be fixed to the upper plate of the second component 100b.

[0058] In one embodiment, the movable part 100m may together with the upper plate 200c of the inner chamber 200 (described later) to form a nozzle. That is, the movable part 100m may constitute part of the nozzle for supplying gas to the plasma processing space S (described later). The movable part 100m may have a gas diffusion chamber 100d and a plurality of vents 100h.

[0059] In one embodiment, a gas diffusion chamber 100d may be disposed within a first component 100a. The gas diffusion chamber 100d may be connected to a gas supply unit 160. The gas supply unit 160 may be located outside the outer chamber 100. The gas supply unit 160 may include one or more gas sources, one or more flow controllers, and one or more valves used in the plasma processing apparatus 1. Each of the one or more gas sources may be connected to the gas diffusion chamber 100d via a corresponding flow controller and a corresponding valve. A plurality of vents 100h may extend downward from the gas diffusion chamber 100d.

[0060] In one embodiment, the substrate support portion 11 may be disposed within the internal space of the outer cavity 100 and below the movable portion 100m. The substrate support portion 11 may have a substrate support surface. The substrate support portion 11 may be supported by a support portion 310 disposed below the substrate support portion 11. The support portion 310 may have a generally cylindrical shape. The support portion 310 may be formed of an insulator such as quartz. The support portion 310 may extend upward from the base plate 320. The base plate 320 may be formed of a metal conductor such as aluminum.

[0061] In one embodiment, the substrate support 11 may include a lower electrode 340 and an electrostatic chuck 360. The lower electrode 340 may have a generally disk-shaped form. The central axis of the lower electrode 340 may be substantially aligned with axis AX. The lower electrode 340 may be formed of a conductor such as aluminum. The interior of the lower electrode 340 may have a flow path 340f. The flow path 340f may extend in a spiral shape. The flow path 340f may be connected to a cooling unit 350. The cooling unit 350 may be located outside the outer chamber 100. The cooling unit 350 may supply coolant to the flow path 340f. The coolant supplied to the flow path 340f may return to the cooling unit 350.

[0062] In one embodiment, the plasma processing apparatus 1 may further include a first high-frequency power supply 410 and a second high-frequency power supply 420. The first high-frequency power supply 410 is a power supply that generates a first high-frequency power (radio frequency signal). The first high-frequency power may have a frequency suitable for generating plasma. The frequency of the first high-frequency power may be, for example, 27 MHz or higher. The first high-frequency power supply 410 may be electrically connected to the lower electrode 340 via a matching connector 410m. The matching connector 410m may include a matching circuit for matching the impedance of the load side (lower electrode 340 side) of the first high-frequency power supply 410 to the output impedance of the first high-frequency power supply 410. Alternatively, the first high-frequency power supply 410 may also be connected to the upper electrode via the matching connector 410m (not the lower electrode 340).

[0063] The second high-frequency power supply 420 is a power supply that generates a second high-frequency power (radio frequency signal). The second high-frequency power may have a frequency suitable for introducing ions into the substrate W. The frequency of the second high-frequency power may be, for example, below 13.56 MHz. The second high-frequency power supply 420 may be electrically connected to the lower electrode 340 via a matching device 420m. The matching device 420m may include a matching circuit for matching the impedance of the load side (lower electrode 340 side) of the second high-frequency power supply 420 to the output impedance of the second high-frequency power supply 420.

[0064] In one embodiment, an electrostatic chuck 360 may be disposed on a lower electrode 340. The electrostatic chuck 360 may include a body and an electrode 360a. The body of the electrostatic chuck 360 may have a generally disc-shaped form. The central axis of the electrostatic chuck 360 may be substantially aligned with axis AX. The body of the electrostatic chuck 360 may be formed of ceramic. A substrate W may be placed on the upper surface of the body of the electrostatic chuck 360. The electrode 360a may be a film formed of a conductor. The electrode 360a may be disposed within the body of the electrostatic chuck 360. The electrode 360a may be connected to a DC power supply 360d via a switch 360s. In one embodiment, if a voltage from the DC power supply 360d is applied to the electrode 360a, an electrostatic attraction is generated between the electrostatic chuck 360 and the substrate W. Through the generated electrostatic attraction, the substrate W is attracted by the electrostatic chuck 360 and held by it. The plasma processing apparatus 1 can provide a gas path for supplying heat transfer gas (such as helium) to the gap between the electrostatic chuck 360 and the back side of the substrate W.

[0065] The substrate support 11 can support the edge ring ER disposed thereon. The substrate W can be placed on the electrostatic chuck 360 within the area surrounded by the edge ring ER. The edge ring ER can be formed of silicon, quartz, or silicon carbide, etc.

[0066] The substrate support portion 11 may further include an insulating portion 370. The insulating portion 370 may be formed of an insulator such as quartz. The insulating portion 370 may be generally cylindrical. The insulating portion 370 may extend along the outer periphery of the lower electrode 340 and the outer periphery of the electrostatic chuck 360.

[0067] The substrate support portion 11 may further include a conductor portion 380. The conductor portion 380 may be formed of a conductor such as aluminum. The conductor portion 380 may be generally cylindrical. The conductor portion 380 may be disposed along the outer periphery of the substrate support portion 11. The conductor portion 380 may extend vertically along the outer periphery of the insulating portion 370. The conductor portion 380 may be grounded. The conductor portion 380 may be grounded via the base plate 320 and the bottom 100f of the outer cavity 100, etc.

[0068] The substrate support portion 11 may further include a cover ring 390. The cover ring 390 may be formed of an insulator such as quartz. The cover ring 390 may have an annular shape. The cover ring 390 may be provided on the insulating portion 370 and the conductor portion 380 in such a way that it is located outside the region where the edge ring ER is disposed.

[0069] The substrate support portion 11 may further include a contact 400. The contact 400 may be electrically connected to the conductor portion 380. The inner chamber 200 may abut against the contact 400 when it forms a plasma processing space S together with the substrate support portion 11. The contact 400 may be disposed on the outside of the cover ring 390 and extend upward from the conductor portion 380.

[0070] Contact 400 can be configured to make elastic contact with the inner cavity 200. For example... Figure 3 As shown, contact 400 may have a spring 400s. Contact 400 may further have a contact portion 400c. Spring 400s and contact portion 400c may be conductive. The lower end of spring 400s may be fixed to conductor portion 380. Spring 400s may extend upward from conductor portion 380. Contact portion 400c may be fixed to the upper end of spring 400s. Contact portion 400c may be the portion that contacts inner cavity 200.

[0071] In one implementation, such as Figure 2 As shown, the inner chamber 200 can be disposed within the internal space of the outer chamber 100, forming a plasma processing space S together with the substrate support 11. The plasma processing space S is the space for generating plasma and processing the substrate W. The inner chamber 200 can be formed of a conductor.

[0072] In one embodiment, the inner chamber 200 may include an upper plate 200c, an annular bottom plate 200b, and inner sidewalls 200s. A plasma processing space S is defined by the substrate support 11, the upper plate 200c, the annular bottom plate 200b, and the inner sidewalls 200s. The upper plate 200c may have a generally circular plate shape. The upper plate 200c may extend horizontally above the plasma processing space S. The upper surface of the upper plate 200c may abut against the lower surface of the movable part 100m. The upper plate 200c may be provided with a plurality of vents 200h. The plurality of vents 200h may penetrate vertically through the upper plate 200c and open into the plasma processing space S. The plurality of vents 200h may be respectively connected to a plurality of vents 100h.

[0073] In one embodiment, the annular bottom plate 200b may have a generally annular shape. The annular bottom plate 200b may extend horizontally outward from the sidewall of the substrate support portion 11. The annular bottom plate 200b may abut against at least one of the contact point 400 and the conductor portion 380.

[0074] The annular bottom plate 200b may have a plurality of through holes 200d. The plasma processing apparatus 1 may further include an exhaust device 700. The exhaust device 700 may include a pressure regulator (such as an automatic pressure control valve) and a pressure reducing pump (such as a turbomolecular pump). The exhaust device 700 may be connected to the bottom 100f of the outer chamber 100 below the plurality of through holes 200d.

[0075] In one embodiment, the inner sidewall 200s may have a generally cylindrical shape. The inner sidewall 200s may extend circumferentially to the side of the plasma processing space S. The inner sidewall 200s may extend downward from the edge of the upper plate 200c and connect to the edge of the annular bottom plate 200b.

[0076] The inner sidewall 200s may include a first inner transparent window 201. The first inner transparent window 201 may be configured to face the first outer transparent window 101. The first inner transparent window 201 may be made of glass, resin, or the like.

[0077] In one embodiment, the inner chamber 200 can be detached from the outer chamber 100. For example... Figure 2 and Figure 3 As shown, the plasma processing apparatus 1 may further include a clamp 500 and a release mechanism 600. The clamp 500 can fix the inner chamber 200 to the outer chamber 100. The release mechanism 600 can release the clamp 500 from fixing the inner chamber 200.

[0078] In one implementation, such as Figure 3 As shown, the clamp 500 can detachably fix the upper plate 200c of the inner chamber 200 to the movable part 100m of the outer chamber 100. The clamp 500 may include multiple support parts 520, multiple springs 540, and multiple plates 560. The number of support parts 520, springs 540, and plates 560 of the clamp 500 may each be one.

[0079] Each of the plurality of support portions 520 may be a rod-shaped portion with a relatively long vertical length. Each of the plurality of support portions 520 may have a lower end portion 520b protruding horizontally from the support portion body. The movable portion 100m of the outer chamber 100 may be provided with a plurality of holes 100c formed on the upper surface of the first component 100a and a plurality of holes 100t extending downward from the holes 100c and penetrating the first component 100a vertically. The holes 100c may be closed by a cover 580 provided on the upper surface of the first component 100a. Each of the plurality of support portions 520 may be inserted through the holes 100c and the holes 100t. The upper surface of the upper plate 200c of the inner chamber 200 may be provided with a recess 200r. The lower end portion 520b of the support portion 520 may be located in the recess 200r. The recess 200r may have an extension portion (step portion) 200e that extends in the horizontal direction, and the extension portion 200e is formed with an engaging portion 200f. The lower end portion 520b may engage with the engaging portion 200f.

[0080] Plate 560 can be disposed in cavity 100c and fixed to the upper end of support portion 520. Spring 540 can be disposed along support portion 520 between the bottom surface of cavity 100c and plate 560. Spring 540 can apply upward force to movable portion 100m on plate 560. As a result, support portion 520 is applied upward force, and as a result, lower end portion 520b of support portion 520 is pressed against engagement portion 200f of upper plate 200c, and inner cavity 200 is held and fixed to movable portion 100m.

[0081] In one embodiment, the release mechanism 600 may include an air supply. The air supply can supply air into the gap between the cover 580 and the plate 560. By supplying air into the gap between the cover 580 and the plate 560, the release mechanism 600 presses down the plate 560, thereby disengaging the lower end 520b of the support portion 520 from the engaging portion 200f of the upper plate 200c, releasing the fixation between the inner chamber 200 and the movable portion 100m. With the fixation between the inner chamber 200 and the movable portion 100m released, the inner chamber 200 can be detached from the outer chamber 100.

[0082] In one implementation, such as Figure 2As shown, the measuring machine 300 can be disposed outside the outer chamber 100. The measuring machine 300 can be disposed near the first outer transparent window 101. The measuring machine 300 can be configured to optically measure the state of the inner chamber 200 via the first outer transparent window 101 and the first inner transparent window 201. The measuring machine 300 can measure the wear state and contaminant adhesion state of the inner chamber 200 or its components. The measuring machine 300 can be at least one selected from the group consisting of a camera, an optical emission spectrometer (OES), and a spectrometer. Furthermore, the measuring machine 300 can be included as part of the plasma processing apparatus 1 or not. The measuring machine 300 can be installed during use or permanently installed.

[0083] <An example of plasma processing>

[0084] In one embodiment, plasma processing includes an etching process that uses plasma to etch a film on a substrate W. In another embodiment, plasma processing is performed by a control unit 2 in a plasma processing apparatus 1.

[0085] First, substrate W passes through Figure 2 The second opening 100p shown is moved into the plasma processing chamber 10, placed on the substrate support 11, and held adsorbed on the substrate support 11.

[0086] Next, the processing gas is supplied to the nozzle by the gas supply unit 160 and then to the plasma processing space S. The processing gas supplied at this time includes gases that generate active species required for etching processing of the substrate W.

[0087] One or more radio frequency signals are supplied from a first high-frequency power supply 410 and a second high-frequency power supply 420 to the upper electrode and / or the lower electrode. As a result, plasma is generated on the substrate support portion 11 of the plasma processing space S, etching the processing substrate W.

[0088] The state of the inner chamber 200 can be confirmed during, after, or before plasma treatment. Figure 6 This is a flowchart illustrating an example of a process for confirming the state of the inner chamber 200. In one embodiment, this process may include a step ST1 of measuring the state of the inner chamber 200, a step ST2 of saving the measurement information, a step ST3 of comparing the measurement information with a reference value, a step ST4 of instructing the replacement of the inner chamber 200, and a step ST5 of replacing the inner chamber 200. This process may be executed by the control unit 2.

[0089] In one implementation, in process ST1, Figure 2The measuring machine 300 shown operates to optically measure the state of the inner chamber 200 via the first outer transparent window 101 and the first inner transparent window 201. The inner wall of the inner chamber 200 is photographed by a camera of the measuring machine 300 to measure the loss state or impurity accumulation state of the inner chamber 200. Thus, measurement information related to the state of the inner chamber 200 can be obtained. The state of the inner chamber 200 can also be indirectly measured by measuring the state of the plasma processing space S using the measuring machine 300.

[0090] In one embodiment, in process ST2, the measurement information acquired in process ST1 is stored in the storage unit 2a2 of the control unit 2.

[0091] In one embodiment, in step ST3, the measured value A1 contained in the measurement information is compared with a preset reference value A2. If the measured value A1 does not exceed the reference value A2, the state of the inner chamber 200 can be measured again. If the measured value A1 does not exceed the reference value A2, the process can end. If the measured value exceeds the reference value, in step ST4, the inner chamber 200 can be instructed to be replaced. This replacement instruction can be displayed on the display unit of the control unit 2. Subsequently, in step ST5, the inner chamber 200 can be replaced. This replacement can be performed automatically. At this time, the fixation between the inner chamber 200 and the outer chamber 100 is released, and the inner chamber 200 is moved to the outside of the outer chamber 100 via the first opening 100o.

[0092] According to this exemplary embodiment, the outer sidewall 100s of the outer chamber 100 in the plasma processing apparatus 1 includes a first outer transparent window 101, and the inner sidewall 200s of the inner chamber 200 includes a first inner transparent window 201. The measuring machine 300 is configured to optically measure the state of the inner chamber 200 via the first outer transparent window 101 and the first inner transparent window 201. Therefore, the state of the inner chamber 200 can be confirmed from the outside of the outer chamber 100. Since the state of the inner chamber 200 can be confirmed without exposing the outer chamber 100 to the atmosphere, the process of confirming the state of the inner chamber 200 can be performed in a short time. Furthermore, the state of the inner chamber 200 can be confirmed even during plasma processing.

[0093] In the above embodiments, such as Figure 7 As shown, one or more first through holes 202 can be provided on the inner sidewall 200s to replace the first inner transparent window 201. The measuring machine 300 can optically measure the state of the inner chamber 200 through the first outer transparent window 101 and the first through hole 202.

[0094] (Second Implementation)

[0095] like Figure 8As shown, the outer sidewall 100s of the outer chamber 100 may include a reflector 102 disposed on the opposite side of the first outer transparent window 101. The gate valve 100g for opening and closing the second opening 100p may include the reflector 102. Furthermore, the inner sidewall 200s of the inner chamber 200 may include a second inner transparent window 203 disposed opposite to the reflector 102 and on the opposite side of the first inner transparent window 201. The second inner transparent window 203 may be made of glass or resin, etc. The measuring machine 300 may include a light source 300a disposed near the first outer transparent window 101 and a detector 300b disposed near the first outer transparent window 101. The measuring machine 300 can optically measure the state of the inner chamber 200 via the first outer transparent window 101, the first inner transparent window 201, the second inner transparent window 203, and the reflector 102. Light emitted from light source 300a passes through the plasma processing space S of inner chamber 200 via first outer transparent window 101 and first inner transparent window 201, passes through second inner transparent window 203 and is reflected by mirror 102, then passes through second inner transparent window 203, first inner transparent window 201 and first outer transparent window 101 in sequence, and is detected by detector 300b. The structure of other parts of plasma processing device 1 is the same as in the first embodiment. Measuring machine 300 measures the loss state or impurity accumulation state of inner chamber 200 by passing light through plasma processing space S and detecting the light.

[0096] In this embodiment, such as Figure 9 As shown, one or more first through holes 202 can be configured on the inner sidewall 200s of the inner chamber 200 to replace the first inner transparent window 201. Furthermore, one or more second through holes 205 can be configured on the inner sidewall 200s of the inner chamber 200 to replace the second inner transparent window 203. In this case, the measuring machine 300 can optically measure the state of the inner chamber 200 via the first outer transparent window 101, the first through hole 202, the second through hole 205, and the reflector 102. Light output from the light source 300a can pass through the plasma processing space S of the inner chamber 200 via the first outer transparent window 101 and the first through hole 202, pass through the second through hole 205, be reflected by the reflector 102, and then sequentially pass through the second through hole 205, the first through hole 202, and the first outer transparent window 101 before being detected by the detector 300b.

[0097] (Third Implementation)

[0098] like Figure 10As shown, the outer sidewall 100s of the outer chamber 100 may include a second outer transparent window 103 disposed on the opposite side of the first outer transparent window 101. The gate valve 100g for opening and closing the second opening 100p may include the second outer transparent window 103. The second outer transparent window 103 may be made of glass, resin, or the like. Furthermore, the inner sidewall 200s of the inner chamber 200 may include a second inner transparent window 203 disposed opposite to the second outer transparent window 103 and on the opposite side of the first inner transparent window 201. The measuring machine 300 includes a light source 300a disposed near the first outer transparent window 101 and a detector 300b disposed near the second outer transparent window 103. The measuring machine 300 can optically measure the state of the inner chamber 200 via the first outer transparent window 101, the first inner transparent window 201, the second inner transparent window 203, and the second outer transparent window 103. The light emitted by the light source 300a can pass through the plasma processing space S of the inner chamber 200 via the first outer transparent window 101 and the first inner transparent window 201, and then be detected by the detector 300b via the second inner transparent window 203 and the second outer transparent window 103. The structure of the other parts of the plasma processing device 1 is the same as that in the first embodiment.

[0099] In this embodiment, such as Figure 11 As shown, one or more first through holes 202 may be configured on the inner sidewall 200s of the inner chamber 200 to replace the first inner transparent window 201. Furthermore, one or more second through holes 205 may be configured on the inner sidewall 200s of the inner chamber 200 to replace the second inner transparent window 203. In this case, the measuring machine 300 can optically measure the state of the inner chamber 200 via the first outer transparent window 101, the first through hole 202, the second through hole 205, and the second outer transparent window 103. Light output from the light source 300a can pass through the plasma processing space S of the inner chamber 200 via the first outer transparent window 101 and the first through hole 202, and be detected by the detector 300b via the second through hole 205 and the second outer transparent window 103.

[0100] Multiple measuring machines 300 can be used in the above embodiments. For example... Figure 5 As shown, the first outer transparent window 101 can be configured with multiple ( Figure 5 (There are two in the middle). Furthermore, multiple first inner transparent windows 201, second outer transparent windows 103, and second inner transparent windows 203 can also be provided. In this case, at least one transparent window can be used to allow light output from the light source 300a to pass through, and at least one transparent window can be used to allow light detected by the detector 300b to pass through. When using multiple measuring machines, multiple transparent windows can be used to allow light from other measuring machines to pass through respectively.

[0101] The embodiments of this disclosure also include the following aspects.

[0102] (Postscript 1)

[0103] A plasma processing apparatus, comprising:

[0104] An outer chamber, the outer chamber including an outer sidewall defining an internal space at least by the outer sidewall, the outer sidewall including a first outer transparent window;

[0105] A substrate support portion is disposed within the internal space of the outer cavity and has a substrate support surface;

[0106] A replaceable inner chamber is disposed within the internal space of the outer chamber, the replaceable inner chamber comprising:

[0107] The upper plate extends horizontally above the base plate support.

[0108] An annular bottom plate extends outward from the sidewall of the substrate support; and

[0109] The inner sidewall extends longitudinally in a manner that connects the outer periphery of the upper plate and the outer periphery of the annular bottom plate.

[0110] The plasma processing space is defined by the substrate support, the upper plate, the annular bottom plate, and the inner sidewall.

[0111] The inner sidewall includes a first inner transparent window configured to face the first outer transparent window; and

[0112] The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window and the first inner transparent window.

[0113] (Postscript 2)

[0114] According to the plasma processing apparatus described in Appendix 1, wherein,

[0115] The outer sidewall has an opening.

[0116] The outer chamber includes a gate valve configured to open and close the opening.

[0117] The gate valve includes the first outer transparent window.

[0118] (Note 3)

[0119] According to the plasma processing apparatus described in Appendix 1, wherein,

[0120] The outer sidewall includes a reflector disposed on the opposite side of the first outer transparent window.

[0121] The inner sidewall includes a second inner transparent window that faces the reflector and is disposed on the opposite side of the first inner transparent window.

[0122] The measuring machine includes:

[0123] The light source is positioned near the first outer transparent window; and

[0124] The detector is positioned near the first outer transparent window.

[0125] The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window, the first inner transparent window, the second inner transparent window, and the reflector.

[0126] (Note 4)

[0127] According to the plasma processing apparatus described in Appendix 3, wherein...

[0128] The outer sidewall includes a first opening and a second opening located on the opposite side of the first opening.

[0129] The outer chamber includes:

[0130] A first gate valve is configured to open and close the first opening; and

[0131] The second gate valve is configured to open and close the second opening.

[0132] The first gate valve includes the first outer transparent window.

[0133] The second gate valve includes the reflector.

[0134] (Note 5)

[0135] According to the plasma processing apparatus described in Appendix 1, wherein,

[0136] The outer sidewall includes a second outer transparent window disposed on the opposite side of the first outer transparent window.

[0137] The inner sidewall includes a second inner transparent window that faces the second outer transparent window and is disposed on the opposite side of the first inner transparent window.

[0138] The measuring machine includes:

[0139] The light source is positioned near the first outer transparent window; and

[0140] The detector is positioned near the second outer transparent window.

[0141] The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window, the first inner transparent window, the second inner transparent window, and the second outer transparent window.

[0142] (Note 6)

[0143] According to the plasma processing apparatus described in Appendix 5, wherein...

[0144] The outer sidewall has a first opening and a second opening located on the opposite side of the first opening.

[0145] The outer chamber includes:

[0146] A first gate valve is configured to open and close the first opening; and

[0147] The second gate valve is configured to open and close the second opening.

[0148] The first gate valve includes the first outer transparent window.

[0149] The second gate valve includes a second outer transparent window.

[0150] (Note 7)

[0151] A plasma processing apparatus, comprising:

[0152] An outer chamber, the outer chamber including an outer sidewall defining an internal space at least by the outer sidewall, the outer sidewall including a first outer transparent window;

[0153] A substrate support portion is disposed within the internal space of the outer cavity and has a substrate support surface;

[0154] A replaceable inner chamber is disposed within the internal space of the outer chamber, the replaceable inner chamber comprising:

[0155] The upper plate extends horizontally above the base plate support.

[0156] An annular bottom plate extends outward from the sidewall of the substrate support; and

[0157] The inner sidewall extends longitudinally in a manner that connects the outer periphery of the upper plate and the outer periphery of the annular bottom plate.

[0158] The plasma processing space is defined by the substrate support, the upper plate, the annular bottom plate, and the inner sidewall.

[0159] The inner sidewall has at least one first through hole facing the first outer transparent window; and

[0160] The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window and the at least one first through-hole.

[0161] (Note 8)

[0162] According to the plasma processing apparatus described in Appendix 7, wherein...

[0163] The outer sidewall has an opening.

[0164] The outer chamber includes a gate valve configured to open and close the opening.

[0165] The gate valve includes the first outer transparent window.

[0166] (Note 9)

[0167] According to the plasma processing apparatus described in Appendix 7, wherein...

[0168] The outer sidewall includes a reflector disposed on the opposite side of the first outer transparent window.

[0169] The inner sidewall has at least one second through hole facing the reflector and located on the opposite side of the at least one first through hole.

[0170] The measuring machine includes:

[0171] The light source is positioned near the first outer transparent window; and

[0172] The detector is positioned near the first outer transparent window.

[0173] The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window, the at least one first through hole, the at least one second through hole, and the reflector.

[0174] (Postscript 10)

[0175] According to the plasma processing apparatus described in Appendix 9, wherein...

[0176] The outer sidewall has a first opening and a second opening located on the opposite side of the first opening.

[0177] The outer chamber includes:

[0178] A first gate valve is configured to open and close the first opening; and

[0179] The second gate valve is configured to open and close the second opening.

[0180] The first gate valve includes the first outer transparent window.

[0181] The second gate valve includes the reflector.

[0182] (Postscript 11)

[0183] According to the plasma processing apparatus described in Appendix 7, wherein...

[0184] The outer sidewall includes a second outer transparent window disposed on the opposite side of the first outer transparent window.

[0185] The inner sidewall has at least one second through hole facing the second outer transparent window and located on the opposite side of the at least one first through hole.

[0186] The measuring machine includes:

[0187] The light source is positioned near the first outer transparent window; and

[0188] The detector is positioned near the second outer transparent window.

[0189] The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window, the at least one first through hole, the at least one second through hole, and the second outer transparent window.

[0190] (Postscript 12)

[0191] According to the plasma processing apparatus described in Appendix 11, wherein,

[0192] The outer sidewall has a first opening and a second opening located on the opposite side of the first opening.

[0193] The outer chamber includes:

[0194] A first gate valve is configured to open and close the first opening; and

[0195] The second gate valve is configured to open and close the second opening.

[0196] The first gate valve includes the first outer transparent window.

[0197] The second gate valve includes a second outer transparent window.

[0198] (Postscript 13)

[0199] A plasma processing apparatus, comprising:

[0200] An outer chamber, the outer chamber including an outer sidewall defining an internal space at least by the outer sidewall, the outer sidewall including a first outer transparent window;

[0201] A substrate support portion, disposed within the internal space of the outer cavity, has a substrate support surface; and

[0202] A replaceable inner chamber is disposed within the internal space of the outer chamber, the replaceable inner chamber comprising:

[0203] The upper plate extends horizontally above the base plate support.

[0204] An annular bottom plate extends outward from the sidewall of the substrate support; and

[0205] The inner sidewall extends longitudinally in a manner that connects the outer periphery of the upper plate and the outer periphery of the annular bottom plate.

[0206] The plasma processing space is defined by the substrate support, the upper plate, the annular bottom plate, and the inner sidewall.

[0207] The inner sidewall includes a first inner transparent window configured to face the first outer transparent window.

[0208] (Postscript 14)

[0209] According to the plasma processing apparatus described in Appendix 13, wherein...

[0210] The outer sidewall has an opening.

[0211] The outer chamber includes a gate valve configured to open and close the opening.

[0212] The gate valve includes the first outer transparent window.

[0213] (Postscript 15)

[0214] According to the plasma processing apparatus described in Appendix 13 or 14, wherein,

[0215] The outer sidewall includes a reflector disposed on the opposite side of the first outer transparent window.

[0216] The inner sidewall has a second inner transparent window that faces the reflector and is located on the opposite side of the first inner transparent window.

[0217] (Postscript 16)

[0218] According to the plasma processing apparatus described in Appendix 13 or 14, wherein,

[0219] The outer sidewall includes a second outer transparent window disposed on the opposite side of the first outer transparent window.

[0220] The inner sidewall includes a second inner transparent window that faces the second outer transparent window and is disposed on the opposite side of the first inner transparent window.

[0221] The above embodiments have been described for illustrative purposes and are not intended to limit the scope of this disclosure. Various modifications can be made to each embodiment without departing from the scope and spirit of this disclosure. For example, some components of one embodiment may be added to other embodiments. Additionally, some components of one embodiment may be replaced with corresponding components of other embodiments.

Claims

1. A plasma processing apparatus, comprising: An outer chamber, the outer chamber including an outer sidewall defining an internal space at least by the outer sidewall, the outer sidewall including a first outer transparent window; A substrate support portion is disposed within the internal space of the outer cavity and has a substrate support surface; A replaceable inner chamber is disposed within the internal space of the outer chamber, the replaceable inner chamber comprising: The upper plate extends horizontally above the base plate support. An annular bottom plate extends outward from the sidewall of the substrate support; and The inner sidewall extends longitudinally in a manner that connects the outer periphery of the upper plate and the outer periphery of the annular bottom plate. The plasma processing space is defined by the substrate support, the upper plate, the annular bottom plate, and the inner sidewall. The inner sidewall includes a first inner transparent window configured to face the first outer transparent window; and The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window and the first inner transparent window.

2. The plasma processing apparatus according to claim 1, wherein, The outer sidewall has an opening. The outer chamber includes a gate valve configured to open and close the opening. The gate valve includes the first outer transparent window.

3. The plasma processing apparatus according to claim 1, wherein, The outer sidewall includes a reflector disposed on the opposite side of the first outer transparent window. The inner sidewall includes a second inner transparent window that faces the reflector and is disposed on the opposite side of the first inner transparent window. The measuring machine includes: The light source is positioned near the first outer transparent window; and The detector is positioned near the first outer transparent window. The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window, the first inner transparent window, the second inner transparent window, and the reflector.

4. The plasma processing apparatus according to claim 3, wherein, The outer sidewall has a first opening and a second opening located on the opposite side of the first opening. The outer chamber includes: A first gate valve is configured to open and close the first opening; and The second gate valve is configured to open and close the second opening. The first gate valve includes the first outer transparent window. The second gate valve includes the reflector.

5. The plasma processing apparatus according to claim 1, wherein, The outer sidewall includes a second outer transparent window disposed on the opposite side of the first outer transparent window. The inner sidewall includes a second inner transparent window that faces the second outer transparent window and is disposed on the opposite side of the first inner transparent window. The measuring machine includes: The light source is positioned near the first outer transparent window; and The detector is positioned near the second outer transparent window. The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window, the first inner transparent window, the second inner transparent window, and the second outer transparent window.

6. The plasma processing apparatus according to claim 5, wherein, The outer sidewall has a first opening and a second opening located on the opposite side of the first opening. The outer chamber includes: A first gate valve is configured to open and close the first opening; and The second gate valve is configured to open and close the second opening. The first gate valve includes the first outer transparent window. The second gate valve includes a second outer transparent window.

7. A plasma processing apparatus, comprising: An outer chamber, the outer chamber including an outer sidewall defining an internal space at least by the outer sidewall, the outer sidewall including a first outer transparent window; A substrate support portion is disposed within the internal space of the outer cavity and has a substrate support surface; A replaceable inner chamber is disposed within the internal space of the outer chamber, the replaceable inner chamber comprising: The upper plate extends horizontally above the base plate support. An annular bottom plate extends outward from the sidewall of the substrate support; and The inner sidewall extends longitudinally in a manner that connects the outer periphery of the upper plate and the outer periphery of the annular bottom plate. The plasma processing space is defined by the substrate support, the upper plate, the annular bottom plate, and the inner sidewall. The inner sidewall has at least one first through hole facing the first outer transparent window; and The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window and the at least one first through-hole.

8. The plasma processing apparatus according to claim 7, wherein, The outer sidewall has an opening. The outer chamber includes a gate valve configured to open and close the opening. The gate valve includes the first outer transparent window.

9. The plasma processing apparatus according to claim 7, wherein, The outer sidewall includes a reflector disposed on the opposite side of the first outer transparent window. The inner sidewall has at least one second through hole facing the reflector and located on the opposite side of the at least one first through hole. The measuring machine includes: The light source is positioned near the first outer transparent window; and The detector is positioned near the first outer transparent window. The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window, the at least one first through hole, the at least one second through hole, and the reflector.

10. The plasma processing apparatus according to claim 9, wherein, The outer sidewall has a first opening and a second opening located on the opposite side of the first opening. The outer chamber includes: A first gate valve is configured to open and close the first opening; and The second gate valve is configured to open and close the second opening. The first gate valve includes the first outer transparent window. The second gate valve includes the reflector.

11. The plasma processing apparatus according to claim 7, wherein, The outer sidewall includes a second outer transparent window disposed on the opposite side of the first outer transparent window. The inner sidewall has at least one second through hole facing the second outer transparent window and located on the opposite side of the at least one first through hole. The measuring machine includes: The light source is positioned near the first outer transparent window; and The detector is positioned near the second outer transparent window. The measuring machine is configured to optically measure the state of the replaceable inner chamber via the first outer transparent window, the at least one first through hole, the at least one second through hole, and the second outer transparent window.

12. The plasma processing apparatus according to claim 11, wherein, The outer sidewall has a first opening and a second opening located on the opposite side of the first opening. The outer chamber includes: A first gate valve is configured to open and close the first opening; and The second gate valve is configured to open and close the second opening. The first gate valve includes the first outer transparent window. The second gate valve includes a second outer transparent window.

13. A plasma processing apparatus, comprising: An outer chamber, the outer chamber including an outer sidewall defining an internal space at least by the outer sidewall, the outer sidewall including a first outer transparent window; A substrate support portion is disposed within the internal space of the outer cavity and has a substrate support surface; as well as A replaceable inner chamber is disposed within the internal space of the outer chamber, the replaceable inner chamber comprising: The upper plate extends horizontally above the base plate support. An annular bottom plate extends outward from the sidewall of the substrate support; and The inner sidewall extends longitudinally in a manner that connects the outer periphery of the upper plate and the outer periphery of the annular bottom plate. The plasma processing space is defined by the substrate support, the upper plate, the annular bottom plate, and the inner sidewall. The inner sidewall includes a first inner transparent window configured to face the first outer transparent window.

14. The plasma processing apparatus according to claim 13, wherein, The outer sidewall has an opening. The outer chamber includes a gate valve configured to open and close the opening. The gate valve includes the first outer transparent window.

15. The plasma processing apparatus according to claim 13, wherein, The outer sidewall includes a reflector disposed on the opposite side of the first outer transparent window. The inner sidewall includes a second inner transparent window that faces the reflector and is located on the opposite side of the first inner transparent window.

16. The plasma processing apparatus according to claim 13, wherein, The outer sidewall includes a second outer transparent window disposed on the opposite side of the first outer transparent window. The inner sidewall includes a second inner transparent window that faces the second outer transparent window and is disposed on the opposite side of the first inner transparent window.

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