Semiconductor device and method for manufacturing semiconductor device

Abstract

The invention relates to a semiconductor device. The purpose of the present disclosure is to provide a semiconductor device capable of easily electrically connecting a signal line and a wiring pattern. This semiconductor device is provided with: a semiconductor module; a socket on which the semiconductor module is mounted, the socket having a socket protrusion protruding toward the same side as the semiconductor module; a bridge substrate disposed on an upper surface of the header protrusion; a pin; and an engagement block. The tube socket is provided with a through hole penetrating from a main surface having the tube socket protruding part to an opposite surface of the surface. The pin has a pin protruding portion that passes through the through-hole and protrudes toward the same side as the base protruding portion. The bonding block is solder-bonded to the bridge substrate on the first surface and solder-bonded to the lead protrusion on the second surface. The bridge substrate and the lead are electrically connected via the bonding block. The melting point of the solder used for solder bonding is lower than the melting point of the bonding block.

Description

Technical Field

[0001] This disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device. Background Technology

[0002] Patent Document 1 discloses a semiconductor device packaged for mounting electronic components, comprising: a wiring substrate having a first surface and a wiring pattern thereon; a substrate having a second surface intersecting the first surface and a through-hole opening on the second surface; a signal line passing through the through-hole and having a protrusion extending from the opening on the second surface of the through-hole; and a conductive bonding material for bonding the wiring pattern to the protrusion of the signal line. Here, the conductive bonding material is configured to at least cover the root portion of the protrusion on the opening side. This prevents the conductive bonding material from becoming too thick, and prevents the signal transmission characteristics at the bonding portion from being reduced due to insufficient capacity.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2021-153156

[0004] In the manufacture of the aforementioned semiconductor device, it is necessary to coat a conductive bonding material between the signal line and the wiring pattern. However, there is a problem that it is difficult to coat the paste-like conductive bonding material in the desired amount at the desired location. Summary of the Invention

[0005] This disclosure was made to solve the above-mentioned problems, and the primary objective is to provide a semiconductor device that can easily make electrical connections between signal lines and wiring patterns.

[0006] Furthermore, a second objective of this disclosure is to provide a method for manufacturing a semiconductor device that enables easy electrical connection of signal lines and wiring patterns.

[0007] The first aspect of this disclosure is preferably a semiconductor device.

[0008] have:

[0009] Semiconductor modules;

[0010] The socket mounts the aforementioned semiconductor module and has a socket protrusion that protrudes to the same side as the aforementioned semiconductor module, and a through hole that extends from the main surface having the aforementioned socket protrusion to the opposing surface of the main surface.

[0011] A bridging substrate is disposed on the upper surface of the aforementioned tube seat protrusion;

[0012] The pin has a pin protrusion that passes through the aforementioned through hole and protrudes to the same side as the aforementioned tube seat protrusion; and

[0013] Connecting block,

[0014] The aforementioned bonding block has a first surface and a second surface. The bonding block is bonded to the solder of the bridging substrate on the first surface and to the solder of the lead protrusion on the second surface.

[0015] The solder used for the above solder joint has a lower melting point than the melting point of the above joint block.

[0016] The aforementioned bridging substrate and the aforementioned pins are electrically connected via the aforementioned bonding block.

[0017] Alternatively, the second method is preferably a manufacturing method for a semiconductor device equipped with a semiconductor module.

[0018] include:

[0019] In the first supply process, a first solder is supplied between the upper surface of the tube socket protrusion and the bridging substrate.

[0020] The process of melting the first solder mentioned above;

[0021] The process of solidifying the first solder to join the protruding part of the tube seat to the bridging substrate.

[0022] The process of placing a bonding block on the upper surface of the aforementioned bridging substrate;

[0023] In the second supply process, a second solder is supplied between the protrusion of the aforementioned bonding block and the pin;

[0024] The process of melting the second solder mentioned above; and

[0025] The process of solidifying the second solder and bonding the protruding portions of the bridging substrate and the pins to the bonding block, thereby electrically connecting the bridging substrate and the pins via the bonding block.

[0026] According to the first and second embodiments of this disclosure, a semiconductor device and a method for manufacturing the same can be provided that can easily make electrical connections between signal lines and wiring patterns. Attached Figure Description

[0027] Figure 1 This is a top view of the semiconductor device according to Embodiment 1 of this disclosure.

[0028] Figure 2 yes Figure 1 A cross-sectional view of section A-A of a semiconductor device.

[0029] Figure 3 This is a diagram illustrating the structure of a prior art semiconductor device according to the comparative examples of this disclosure, and is derived from... Figure 2 Images viewed from the same direction.

[0030] Figure 4This is a diagram illustrating a method for manufacturing a semiconductor device according to Embodiment 1 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction.

[0031] Figure 5 This is a diagram illustrating a method for manufacturing a semiconductor device according to Embodiment 1 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction.

[0032] Figure 6 This is a diagram illustrating a method for manufacturing a semiconductor device according to Embodiment 1 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction.

[0033] Figure 7 This is a diagram illustrating a method for manufacturing a semiconductor device according to Embodiment 1 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction.

[0034] Figure 8 This is a diagram illustrating a method for manufacturing a semiconductor device according to Embodiment 1 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction.

[0035] Figure 9 This is a diagram illustrating the structure of the semiconductor device according to Embodiment 1 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction.

[0036] Figure 10 This is a diagram illustrating the structure of the semiconductor device according to Embodiment 2 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction.

[0037] Figure 11 This is a diagram illustrating the structure of the semiconductor device according to Embodiment 2 of this disclosure, and it is derived from... Figure 1 Images viewed from the same direction.

[0038] Figure 12 This is a diagram illustrating the structure of the semiconductor device according to Embodiment 2 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction.

[0039] Figure 13 This is a diagram showing the structure of the semiconductor device according to Embodiment 2 of this disclosure, and is a front view of the main surface of the socket.

[0040] Figure 14 This is a diagram illustrating the structure of the semiconductor device according to Embodiment 2 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction.

[0041] Figure 15 This is a diagram showing the structure of the semiconductor device according to Embodiment 2 of this disclosure, and is a front view of the main surface of the socket.

[0042] Figure 16 This is a diagram illustrating the structure of the semiconductor device according to Embodiment 3 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction. Detailed Implementation

[0043] The semiconductor device and its manufacturing method according to embodiments of the present disclosure will be described with reference to the accompanying drawings. The same or corresponding components are labeled with the same reference numerals, and repeated descriptions are sometimes omitted.

[0044] Implementation Method 1

[0045] Figure 1 This is a top view of the semiconductor device 200 according to Embodiment 1 of this disclosure. Figure 2 yes Figure 1 A cross-sectional view of section A-A of the semiconductor device 200. Furthermore... Figure 1 and Figure 2 Only the basic components of the semiconductor device 200 are shown; components such as the PD (Photo Diode), thermistor, and capacitor are not illustrated. Furthermore, even if a component is shown in either the top view or the cross-sectional view of the semiconductor device 200, it may sometimes be omitted in the other view unless further explanation is required. This is common to all embodiments described below.

[0046] The semiconductor device 200 includes an optical semiconductor module 10, a sub-base 20, a carrier 30, a thermal module 40, a bridging substrate 50 with a wiring pattern, a socket 100, and pins 120 as signal lines.

[0047] The following will Figure 1 The top view shows the upper surface of the semiconductor device 200 and its constituent components. The opposite surface is shown as the back surface of the semiconductor device 200 and the constituent components assembled therewith. Furthermore, from... Figure 1 The surface viewed from the left (right) side of the paper serves as the left (right) side of the semiconductor device 200 and as the left (right) side of the constituent components assembled with the semiconductor device 200. This is common in all the embodiments described below.

[0048] The sub-base 20 is a mounting platform on which the optical semiconductor module 10 is bonded to its upper surface by a first solder 70. The shelf 30 is bonded to the back of the sub-base 20 by a second solder 80. In addition, the thermal module 40 is bonded to the right side of the sub-base 20 by the first solder 70.

[0049] The tube socket 100 is attached to the right side of the thermal module 40 by the first solder 70.

[0050] A socket protrusion 101 is formed on the main surface 104 of the socket 100, protruding toward the same side as the semiconductor module. Additionally, as... Figure 2 As shown in the cross-sectional view, on the surface with the tube seat protrusion 101, a through hole 102 is provided on the tube seat protrusion 101 to extend the main surface 104 to the opposing surface.

[0051] The bridging substrate 50 is bonded to the upper surface of the tube seat protrusion 101 of the tube seat 100 by a first solder 70. The metal block 110 is bonded to the upper surface of the bridging substrate 50 by a second solder 80.

[0052] The right side of the metal block 110 is engaged with the pin 120 through the through hole 102 of the tube seat 100 by the second solder 80.

[0053] The following continues to refer to Figure 1 and Figure 2 The components will be explained in more detail.

[0054] The optical semiconductor module 10 is a component that converts electrical signals into optical signals or vice versa. LD (Laser Diode) and PD (Photo Diode) are equivalent to the optical semiconductor module 10. The optical semiconductor module 10 is made of materials such as InP, GaAs, GaN, InGaAs, Ge, and Si. In this embodiment, the optical semiconductor module 10 is preferably an InP-containing LD, but the type and material of the component are not limited. An Au-metallized pad portion is formed on the optical semiconductor module 10. Through this pad portion, the optical semiconductor module 10 and the sub-base 20 can be mechanically and electrically bonded.

[0055] Furthermore, this embodiment shows a case where there is one optical semiconductor module 10, but there can also be multiple optical semiconductor modules 10. In this case, multiple optical semiconductor modules 10 can also be bonded to a sub-base 20. This is common to all the embodiments below.

[0056] The sub-base 20 has a substrate 21, electrode pads 22 formed on the upper or back surface of the substrate 21, and electrode pads 23 formed on the upper or back surface of the substrate 21 on surfaces different from the electrode pads 22. As the material of the substrate 21, it is preferably an electrically insulating material with a high thermal conductivity to effectively cool the optical semiconductor module 10, and ceramic plates such as AlN and Al2O3 are typically used.

[0057] Furthermore, in the semiconductor device 200 of this embodiment, a case is shown where there is one sub-base 20, but the number of sub-bases 20 is not limited.

[0058] Electrode pads 22 and 23 are typically made of the same material. The optical semiconductor module 10 is bonded to the electrode pads 22 via a first solder 70. Furthermore, the electrode pads 22 are electrically connected to surrounding components and the surface of the optical semiconductor module 10 via leads 60, etc.

[0059] Since the electrode pad 22 is a wiring component used to electrically connect the optical semiconductor module 10 to an external circuit, it is preferably made of a metal with low resistance. As electrode pads 22 and 23, metallization based on Au or the like with a thickness of less than 3.0 μm is typically used.

[0060] In this embodiment, firstly, an electrode pad 22 made of Au with a thickness of 1.5 μm is metallized on a substrate 21 made of AlN with a thickness of 0.3 mm. Furthermore, a first solder 70 containing AuSn with a thickness of 3 μm is pre-coated at the portion of the electrode pad 22 to be bonded to the optical semiconductor module 10. Thus, an electrode pad 22 suitable for this embodiment is obtained.

[0061] The electrode pads 23, located on the heat dissipation side of the substrate 21, are mechanically and thermally connected to the carrier 30 via solder or Ag paste. In this embodiment, the connection is achieved using a SnAgCu-based second solder 80.

[0062] The shelf 30 is made of materials with excellent thermal conductivity, such as metals like Ag, Cu, Fe, and Al, or their alloys, as well as insulators like ceramics or resins coated with metal. In this embodiment, a shelf 30 with an Au plating applied to the surface of CuW is suitable, but it is not limited to this.

[0063] The shelf 30 of this embodiment has a convex shape in a planar view when viewed from above. Here, for explanation, the protruding part of the convex shape is referred to as the protrusion, and the rest is referred to as the bottom. The thermal module 40 is bonded to the right side of the bottom of the shelf 30 by a first solder 70. On the other hand, the sub-base 20 is bonded to the upper surface of the protrusion by a second solder 80. For bonding, the SnAgCu-based second solder 80 is used. In addition, the optical semiconductor module 10 is bonded to the upper surface of the sub-base 20. Furthermore, the shelf 30 is not limited to a convex shape and may also adopt other shapes.

[0064] The heat module 40 releases the received heat to the socket 100 and the like via a Peltier element. By controlling the temperature of the optical semiconductor module 10 using the heat module 40, the optical semiconductor module 10 can operate stably. A metallized portion 41 is formed on the mating surface of the heat module 40 that engages with the carrier 30, and a metallized portion 42 is formed on the mating surface of the heat module 40 that engages with the socket 100. The metallized portions 41 and 42 are typically made of the same material. As the metallized portions 41 and 42, Au or similar materials with a thickness of approximately 3.0 μm are used.

[0065] The bridging substrate 50 is bonded to the socket protrusion 101 of the socket 100 via a first solder 70. The bridging substrate 50 has a substrate 51, electrode pads 52 formed on the upper surface of the substrate 51, and electrode pads 53 formed on the back surface of the substrate 51. As the material of the substrate 51, an electrical insulator is preferably used, typically a ceramic plate such as AlN or Al2O3. The bridging substrate 50 drives the optical semiconductor module 10 via a high-frequency electrical signal, or outputs a high-frequency signal from the optical semiconductor module 10 to the pins 120 electrically connected via the metal block 110.

[0066] Electrode pads 52 and 53 are typically made of the same material. The electrode pads 52, disposed on the circuit side of the bridging substrate 50, are bonded to the metal block 110 via a second solder 80. Furthermore, a bonding portion, such as a lead 60, is formed on the electrode pads 52, through which they are electrically connected to the electrode pads 22 of the sub-base 20. Since the electrode pads 52 are wiring components, they are preferably made of a metal with low resistance, similar to the electrode pads 22 described above. Electrode pads 52 and 53 are typically metallized portions based on Au or the like with a thickness of 3.0 μm or less. In this embodiment, it is suitable to use a bridging substrate 50 formed by metallizing electrode pads 52 made of Au with a thickness of 1.0 μm on a substrate 51 made of Al2O3 with a thickness of 0.5 mm, but it is not limited to this.

[0067] Electrode pads 53 are bonded to the upper surface of the socket protrusion 101. In this embodiment, bonding is shown using the first solder 70, but bonding can also be performed using conductive bonding materials such as Ag paste.

[0068] For example, the lead 60 electrically connects the electrode pad 52 formed on the upper surface of the bridging substrate 50 to the electrode pad 22 formed on the sub-base 20. The connection can be implemented, for example, using an ultrasonic method. Additionally, the lead 60 also electrically connects the tube socket protrusion 101 to the holder 30, the bridging substrate 50 to the sub-base 20, and the pins 120 (excluding those bonded to the metal block 110) to the thermal module 40. However, the connection points using the lead 60 are not limited to these.

[0069] The preferred material for the lead 60 is a metal with low resistance. Therefore, metals such as Au, Cu, and Al, or their alloys, are commonly used.

[0070] The first solder 70 is used for bonding between the electrode pads 22 of the sub-base 20 and the optical semiconductor module 10. Here, at the moment the bonding process is performed using the first solder 70, the process of bonding the sub-base 20, including the optical semiconductor module 10, to the upper surface of the carrier 30 using the second solder 80 (referred to as the carrier-base bonding process) has not yet been performed. From this viewpoint, the material of the first solder 70 is preferably a metal with a higher melting point and higher thermal conductivity than the second solder 80. This prevents the first solder 70 from remelting during the carrier-base bonding process. Furthermore, the bonding location based on the first solder 70 is not limited to between the electrode pads 22 of the sub-base 20 and the optical semiconductor module 10.

[0071] The first solder 70 is typically an alloy containing Au, Sn, Pb, Ag, Cu, Zn, Ni, Sb, In, Ge, Si, etc., with a melting point less than 450°C. In this embodiment, the first solder 70 is preferably an alloy mainly containing Au, Sn, Ge, or Si, with a melting point of 250°C or higher. Furthermore, a eutectic solder of Au and Sn is particularly suitable for the first solder 70 in this embodiment, but it is not a limitation thereto.

[0072] The second solder 80 is used, for example, in the shelf-base bonding process. As described above, during the shelf-base bonding process, the optical semiconductor module 10 and the sub-base 20 have already been bonded by the first solder 70. Therefore, the material of the second solder 80 is preferably a metal with a lower melting point and higher thermal conductivity than the first solder 70.

[0073] As the second solder 80, an alloy containing Sn, Pb, Ag, Cu, Zn, Ni, Sb, Bi, In, Ge, etc., with a melting point of less than 450°C is typically used. As the second solder 80 in this embodiment, an alloy mainly containing Sn, Ag, or Cu, with a melting point of 200°C or higher, is preferably used. Furthermore, the second solder 80 in this embodiment is particularly suitable for solders containing Ag and Cu in Sn, but is not limited to this.

[0074] Furthermore, the application examples of the first solder 70 and the second solder 80 described in this embodiment are merely examples; the second solder 80 may also be applied to the locations where the first solder 70 is shown in the drawings, and vice versa. Additionally, the first solder 70 and the second solder 80 may be identical.

[0075] The insulating adhesive 90 bonds the pin 120, which passes through the through hole 102 provided in the tube seat 100, to the inner wall of the through hole 102. Here, when considering the final process where the lens cover is joined to the tube seat 100 and the inside of the lens cover is sealed, for example when the tube seat 100 and the thermal module 40 are joined by the first solder 70, care must be taken to prevent the adhesive from peeling off and compromising the airtightness. From this perspective, the insulating adhesive 90 is preferably a material with high heat resistance and low expansion and contraction rate.

[0076] Furthermore, since it is necessary to electrically insulate the socket 100 and the lead 120, the material of the insulating adhesive 90 is preferably an insulating material. The insulating adhesive 90 of this embodiment is suitable for use with glass, but is not limited thereto.

[0077] The socket 100 is, for example, a cylindrical plate, and a socket protrusion 101 is formed on the main surface 104 of the socket 100, protruding toward the same side as the semiconductor module. Additionally, as... Figure 2 As shown in the cross-sectional view, on the surface with the tube seat protrusion 101, a through hole 102 is provided on the tube seat protrusion 101 to extend the main surface 104 to the opposing surface.

[0078] The socket protrusion 101 is formed to protrude to a position closer to the optical semiconductor module 10 than the protrusion of the pin 120. The socket protrusion 101 can also be formed by mechanically joining components different from the socket 100 using solder or the like, but since the bridging substrate 50 is joined to the upper surface of the socket protrusion 101 by the first solder 70, it is preferable to form it integrally with the socket 100. The socket 100 is formed, for example, by metallizing the surface of an inexpensive and easily machinable metal using Au. The socket protrusion 101 of this embodiment is suitable for use with SPC material (cold-rolled steel sheet), but is not limited thereto.

[0079] The metal block 110 is made of a material with excellent conductivity, such as metals like Ag, Cu, Fe, and Al, or their alloys, or materials in which electrical insulators like ceramics or resins are coated with metal. In this embodiment, a metal block 110 with Au plating applied to the surface of a CuW block is suitable, but it is not limited to this. The bridging substrate 50 is bonded to the back side of the metal block 110 via electrode pads 52 and a second solder 80. Additionally, the pins 120 are bonded to the right side of the metal block 110 via the second solder 80.

[0080] Hereinafter, the surface of the metal block 110 that is soldered to the bridging substrate 50 is designated as the first surface 105, and the surface of the metal block 110 that is soldered to the lead protrusion 121 is designated as the second surface 106. Furthermore, the first surface 105 and the second surface 106 do not necessarily have to be perpendicular; they can be parallel or even the same surface.

[0081] The metal block 110 in this embodiment is preferably a cube or cuboid. However, the metal block 110 may also be other shapes.

[0082] Pin 120 is a signal line made of a highly conductive material, such as metals or alloys of Ag, Cu, Fe, Al, Ni, or materials insulators such as ceramics or resins coated with metal. Pin 120 can be cylindrical or prismatic. Furthermore, in this embodiment, pin 120 is suitable for a cylinder with a diameter of 0.3 mm and a length of 8 mm, formed by Au plating on the surface of Fe-50Ni, but is not limited to this.

[0083] As described above, one of the plurality of pins 120 has a pin protrusion 121 that passes through a through hole 102 formed in the socket 100 and protrudes to the same side as the socket protrusion 101. Furthermore, the pin 120 is bonded to the metal block 110 at the end face 122 of the pin protrusion 121 by a second solder 80. However, the bonding does not necessarily have to be at the end face 122 of the pin protrusion 121; it can also be at the side. Moreover, when two or more pins of the plurality of pins 120 are respectively bonded to the metal block 110, it is sufficient to provide a plurality of through holes 102, allowing the pins 120 to pass through each of the plurality of through holes 102 and be electrically connected to the metal block 110.

[0084] <Comparative Example>

[0085] Figure 3 This is a diagram illustrating the structure of a prior art semiconductor device 300 according to a comparative example of this disclosure, and is derived from... Figure 2 Images viewed from the same direction. For example... Figure 3 As shown, in the prior art semiconductor device 300, a conductive bonding material such as a first solder 70 is used to directly bond the pin 120 to the electrode pad 52. Since the pin 120 is spaced apart from the bridging substrate 50, the distance between the conductive bonding materials bonding them becomes longer.

[0086] Furthermore, since the pin 120 is fixed to the socket 100 by bonding with insulating adhesive 90, the positional deviation of the pin protrusion 121 between individual pins is large. In the prior art, when the pin 120 is joined to the bridging substrate 50, a manufacturing process that takes into account this positional deviation is required.

[0087] <Effects of Embodiment 1 of this Disclosure>

[0088] On the other hand, such as Figure 2As shown, in this embodiment, the pin 120 and the electrode pad 52 are bonded together via a metal block 110. This increases the cross-sectional area for current flow between the pin 120 and the bridging substrate 50 compared to the prior art. Consequently, the resistance between the pin 120 and the bridging substrate 50 is reduced compared to the prior art, preventing degradation of signal transmission characteristics. Furthermore, using a metal with a lower resistance than the first solder 70 as the metal block 110 further enhances these effects.

[0089] Furthermore, in this embodiment, when manufacturing the semiconductor device 200, the upper surface of the metal block 110, which is neither bonded to the pin 120 nor to the electrode pad 52, can be adsorbed using a slotted clip, and it can be easily placed at a position that contacts both the end face 122 of the pin 120 and the electrode pad 52. Additionally, by using the metal block 110, it is not necessary to manage the application location and amount of conductive bonding material as in the prior art where the pin 120 is directly bonded to the electrode pad 52 via conductive bonding, thus simplifying manufacturing.

[0090] Furthermore, in this embodiment, by making the area of ​​the surface of the metal block 110 that engages with the pin 120 larger than the positional deviation of the pin protrusion 121, the positional deviation of the pin protrusion 121 can be absorbed on the metal block 110 side. Therefore, it is not necessary to establish a manufacturing process that takes into account the positional deviation of the pin protrusion 121, as is done in the prior art, which helps to improve the yield rate.

[0091] The following is for reference Figures 4-8 The manufacturing method of the semiconductor device 200 in this embodiment will be described. Figure 4 This is a diagram illustrating a method for manufacturing a semiconductor device 200 according to Embodiment 1 of this disclosure, and it is derived from... Figure 2 The diagram is viewed from the same direction. First, a plate-shaped first solder 70 is supplied to the upper surface of the socket protrusion 101 formed on the socket 100 (first step). Then, the first solder 70 is melted by heating the surface of the socket 100 opposite to the main surface 104 using a heater 150 (second step). In addition, in the second step, a step may be added to melt the second solder 80 that has been pre-supplied to the end face 122 of the pin 120 once.

[0092] then, Figure 5 This is a diagram illustrating a method for manufacturing a semiconductor device 200 according to Embodiment 1 of this disclosure, and it is derived from... Figure 2The diagram is viewed from the same direction. With the first solder 70 molten on the upper surface of the socket protrusion 101, the bridging substrate 50 is placed using the placement machine 160 (third step). Then, the first solder 70 is solidified by cooling the entire socket 100 (fourth step). Thus, the socket protrusion 101 and the bridging substrate 50 are joined. The set temperature of the heater 150, which melts the first solder 70, is, for example, 360°C.

[0093] In addition, the third and fourth processes can be performed before or after the process of joining the thermal module 40 to the tube socket 100 using the first solder 70, but preferably before the process.

[0094] Figure 6 This is a diagram illustrating a method for manufacturing a semiconductor device 200 according to Embodiment 1 of this disclosure, and it is derived from... Figure 2 The diagram is viewed from the same direction. A plate-shaped second solder 80 is supplied onto the electrode pads 52 of the bridging substrate 50, and the second solder 80 is melted by heating the surface of the socket 100 opposite to the main surface 104 using the heater 150 (fifth step).

[0095] Figure 7 This is a diagram illustrating a method for manufacturing a semiconductor device 200 according to Embodiment 1 of this disclosure, and it is derived from... Figure 2 The diagram is viewed from the same direction. With the second solder 80 molten on the electrode pad 52, a metal block 110 is placed from above and scrubbed with a scrubbing machine 170 (sixth step). In the sixth step, the metal block 110 is heated via the bridging substrate 50 through the heating tube socket 100 while being scrubbed. The scrubbing direction includes at least the length direction of the pin 120, such that the second solder 80 on the electrode pad 52 also diffuses to the end face 122 of the pin 120.

[0096] Here, it should be noted that the second solder 80 supplied in the first process has an oxide film on its surface when it melts. The oxide film can be removed by wiping the metal block 110. If flux is used, wiping is not required, but if flux adheres to the surrounding area after solder bonding, cleaning is necessary, so wiping is preferred.

[0097] Figure 8 This is a diagram illustrating a method for manufacturing a semiconductor device 200 according to Embodiment 1 of this disclosure, and it is derived from... Figure 2The diagram is viewed from the same direction. The pin 120 is heated by heating the socket 100 while the metal block 110 is in contact with the end face 122 of the pin 120 (seventh step). Finally, the entire socket 100 is cooled while the positions of the metal block 110 and the pin 120 are fixed, thereby solidifying the second solder 80 (eighth step). This allows the solder on the metal block 110 to be bonded to both the electrode pad 52 and the pin 120. As a result, the bridging substrate 50 and the pin 120 can be electrically connected via the metal block 110.

[0098] Furthermore, since the oxide film formed on the surface of the second solder 80 can be removed through the sixth process, it is preferable to perform the sixth and seventh processes simultaneously with the aforementioned carrier-base joining process from the perspective of process simplification.

[0099] Furthermore, the third step described above, which involves bonding the bridging substrate 50 to the tube seat protrusion 101 of the tube seat 100, can also be included in the shelf-base bonding step by changing the first solder 70 to the second solder 80. However, in this case, it is equivalent to remelting the second solder 80, which solidified in the third step, in the sixth step. Therefore, care must be taken to prevent the bridging substrate 50 from shifting position when cleaning the metal block 110. The set temperature of the heater 150 for melting the second solder 80 is, for example, 300°C, but it is not limited to this.

[0100] Here, in Figure 3 In the prior art of the comparative example shown, during solder bonding between the pin 120 and the bridging substrate 50, the pin 120 is heated to a temperature suitable for solder bonding. However, at this time, the pin 120 is fixed to the socket 100 by the insulating adhesive 90. Therefore, in the prior art, it is necessary to effectively heat the socket 100 and the pin 120 via the insulating adhesive 90. However, since the thermal conductivity of the insulating adhesive 90 is lower than that of metals, it is necessary to heat the socket 100 to a temperature higher than the normal melting temperature of the first solder 70, or to spend a longer time heating the socket 100 than the normal melting time of the first solder 70.

[0101] On the other hand, in this embodiment, by heating the socket 100 in the seventh step while the metal block 110 is in contact with the end face 122 of the pin 120, the pin 120 can be indirectly heated from the socket 100 via the bridging substrate 50. Since the thermal conductivity of the bridging substrate 50 and the metal block 110 is generally greater than that of the insulating adhesive 90, the pin 120 can be heated at a lower temperature than in the prior art of heating the pin 120 from the socket 100 via the insulating adhesive 90. This reduces the time required for product assembly.

[0102] In addition, Figure 3 In the prior art shown, when bonding the pin 120 to the bridging substrate 50 using the first solder 70, the first solder 70 with an Au coating is typically used, or bonding is performed in a reducing atmosphere such as nitrogen to prevent oxidation of the first solder 70. In the prior art, it is difficult to use a second solder 80, which oxidizes more easily than the first solder 70, so it is necessary to use the first solder 70, which has a higher melting point than the second solder 80. When heating the pin 120, temperature management is required to prevent the solder at other bonding locations from remelting, which could cause positional deviation of the components at that bonding location, and to prevent the insulating adhesive 90 filling the through-hole 102 of the socket 100 from peeling off and compromising the airtightness.

[0103] On the other hand, in this embodiment, the surface oxide film of the solder can be destroyed by the wiping in the sixth step, so a second solder 80 that is easily oxidized can also be used. Therefore, compared with the prior art using the first solder 70, the heating temperature can be reduced, and temperature management is not required.

[0104] Furthermore, the melting point of the second solder 80 supplied in the fifth step must be lower than that of the metal block 110 to prevent the metal block 110 from melting during heating. This is consistent even when the first solder 70 is used instead of the second solder 80. Moreover, this is consistent in all the following embodiments.

[0105] As explained above, according to this embodiment, a semiconductor device 200 and a method thereof can be provided that can easily make electrical connections between pins 120, which are signal lines, and bridging substrates 50, which are wiring patterns.

[0106] <Variation Example>

[0107] The above example uses a semiconductor device 200 equipped with an optical semiconductor module 10, but it can also be applied to semiconductor devices for power applications.

[0108] Furthermore, the method of supplying a plate-shaped first solder 70 to the upper surface of the socket protrusion 101 formed on the socket 100 in the first process has been described, but the method of supplying the first solder 70 is not limited to this. For example, the first solder 70 may also be pre-coated on the electrode pads 53 of the bridging substrate.

[0109] Similarly, the method of supplying a plate-shaped second solder 80 to the electrode pads 52 of the bridging substrate 50 in the fifth step, and the method of wiping the metal block 110 in the sixth step to allow the second solder 80 to diffuse toward the end face 122 of the pin 120, are described. However, the method of supplying the second solder 80 is not limited to this. For example, the second solder 80 may be pre-coated onto the pin protrusion 121. In this case, it is not necessary to wipe the metal block 110 in the sixth step.

[0110] Figure 9 This is a diagram illustrating the structure of the semiconductor device 200 according to Embodiment 1 of this disclosure, and it is derived from... Figure 2 The diagram is viewed from the same direction. In the metal block 110, all surfaces except the upper surface that is held in place by a slotted jacket during transport are coated with a second solder 80. By pre-coating the metal block 110 with the second solder 80 through plating or other methods, the second solder 80 can be omitted from supplying the bridging substrate 50 in the fifth process. Furthermore, in the sixth process, the metal block 110 does not need to be cleaned, and the second solder 80 is allowed to diffuse towards the end face 122 of the pin 120.

[0111] Furthermore, it is not necessary to... Figure 9 In this way, the second solder 80 can be applied to all surfaces except the top surface, specifically the surfaces of the metal block 110 on the side of the electrode pad 52 and the side of the pin 120. Alternatively, the second solder 80 that bonds the metal block 110 to the pin 120 and the second solder 80 that bonds the metal block 110 to the electrode pad 52 can be integrated into one unit.

[0112] Implementation Method 2

[0113] Figure 10 This is a diagram illustrating the structure of the semiconductor device 200 according to Embodiment 2 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction. Figure 11 This is a diagram illustrating the structure of the semiconductor device 200 according to Embodiment 2 of this disclosure, and it is derived from... Figure 1 The diagram is viewed from the same direction. One or more cuts or recesses are formed longitudinally along the paper surface on the side of the metal block 110 on the lead 120 side. Therefore, when the second solder 80 on the bridging substrate 50 is melted in the sixth process, the molten second solder 80 rises and fills the cuts or recesses through capillary action, spreading between the metal block 110 and the lead 120. As a result, solder bonding can be achieved even without supplying the second solder 80 to the lead 120.

[0114] Figure 12 This is a diagram illustrating the structure of the semiconductor device 200 according to Embodiment 2 of this disclosure, and it is derived from... Figure 2Images viewed from the same direction. Figure 13 This diagram illustrates the structure of the semiconductor device 200 according to Embodiment 2 of this disclosure, and is a front view of the main surface 104 of the socket 100. A through-hole 111 is provided, through which the metal block 110 extends from the pin 120 side in an extending direction towards the pin 120. Furthermore, the pin protrusion 121 passes through the through-hole 111 and is bonded to the second surface 106 of the metal block 110 within the through-hole 111 by a second solder 80. This increases the stability of the component during bonding, enabling reliable solder bonding. Moreover, since the bonding area between the pin 120 and the metal block 110 can be larger than in Embodiment 1, resistance can be reduced, and degradation of transmission characteristics can be suppressed.

[0115] Furthermore, the shape of the through hole 111 is not limited to a cylindrical shape. For example, the diameter of the face on the pin 120 side of the metal block 110 can be larger than the diameter of the opposite face, thus forming a conical shape. Therefore, there is an adjustment margin for the pin 120 within the through hole 111, which is preferable.

[0116] Figure 14 This is a diagram illustrating the structure of the semiconductor device 200 according to Embodiment 2 of this disclosure, and it is derived from... Figure 2 Images viewed from the same direction. Figure 15 This diagram illustrates the structure of the semiconductor device 200 according to Embodiment 2 of this disclosure, and is a front view of the main surface 104 of the socket 100. A recess 112 is provided from the surface of the metal block 110 facing the opposite surface. The lead protrusion 121 is inserted into the recess 112 and is bonded to the second surface 106 of the metal block 110 within the recess 112 by a second solder 80. Thus, a connection with... Figure 12 and Figure 13 The effect is the same as described in the text.

[0117] Furthermore, in the recess 112, the diameter of the opening side can be larger than the diameter of the opposing surface, thus forming a conical shape. Therefore, the recess 112 has an adjustment margin for the pin 120, which is preferable.

[0118] Implementation Method 3

[0119] Figure 16 This is a diagram illustrating the structure of the semiconductor device 200 according to Embodiment 3 of this disclosure, and it is derived from... Figure 2 The diagram is viewed from the same direction. In this embodiment, the metal block 110 described in Embodiment 1 is replaced with a substrate 130.

[0120] The substrate 130 includes a base material 131, a first electrode pad 132 formed on the back side of the base material 131, and a second electrode pad 133 formed on a surface of the base material 131 perpendicular to the back side. The base material 131 is an electrical insulator, typically a ceramic plate such as AlN or Al2O3.

[0121] The first electrode pad 132 and the second electrode pad 133 are typically made of the same material. The first electrode pad 132 is bonded to the electrode pad 52 by the second solder 80. The surface above the first electrode pad 132 on which this bonding is performed is the first surface 105 described in Embodiment 1.

[0122] Furthermore, the first electrode pad 132 and the second electrode pad 133 are electrically connected, for example, by metallizing the second electrode pad 133. Since the first electrode pad 132 is a wiring component that electrically connects the pin 120 to the electrode pad 52, it is preferably made of a metal with low resistance. As the first electrode pad 132 and the second electrode pad 133, a metallization portion based on Au or the like with a thickness of 3.0 μm or less is typically used. By forming the first electrode pad 132 and the second electrode pad 133 in a state where they are electrically connected via side metallization or the like, it is possible to prevent a decrease in the transmission characteristics between the pin 120 and the electrode pad 52.

[0123] Furthermore, in the substrate 130 of this embodiment, a first electrode pad 132 made of Au with a thickness of 3.0 μm is disposed on a base material 131 made of AlN with a thickness of 0.5 mm. Then, a second solder 80 containing SuAgCu with a thickness of 5 μm is pre-coated on the first electrode pad 132, and Au with a thickness of 0.1 μm is sputtered onto the surface of the second solder 80, thereby obtaining a suitable substrate 130. However, the structure of the substrate 130 is not limited to this.

[0124] The second electrode pad 133 is bonded to the end face 122 of the pin 120 by the second solder 80. However, the bonding does not necessarily have to be the end face 122 of the pin protrusion 121; it can also be the side face. The surface above the second electrode pad 133 where this bonding is performed is the second surface 106 described in Embodiment 1.

[0125] In the bonding process, similar to the first electrode pad 132, a second solder 80 with Au sputtered on its surface is suitable. By pre-coating the second solder 80 with Au sputtered on its surface onto the first electrode pad 132 and the second electrode pad 133, surface oxidation of the second solder 80 can be prevented, and the process of supplying the second solder 80 can be omitted. Furthermore, the second solder 80 with Au sputtered on its surface can also be pre-coated onto the surface of the metal block 110 on the bridging substrate 50 side and the surface on the pin 120 side as described in Embodiment 1. This achieves the same effect as described above.

[0126] Here, when multiple pins 120 are electrically connected to the bridging substrate 50, in Embodiment 1, the metal blocks 110 need to be configured in the same number as the number of pins 120 being bonded. On the other hand, in the substrate 130 of this embodiment, by forming the first electrode pad 132 and the second electrode pad 133 according to the configuration of the multiple pins 120, all pins 120 can be bonded to the electrode pads 52 using a single substrate 130. This shortens the assembly time and reduces processing costs. Furthermore, the method of bonding multiple pins 120 to the bridging substrate 50 is not limited to this; multiple substrates 130 can also be used.

[0127] Furthermore, in this embodiment, the case where the second electrode pad 133 is formed on a surface of the base material 131 perpendicular to the back surface has been described. However, the second electrode pad 133 may also be located on the same surface as the surface where the first electrode pad 132 is formed, or it may be located on the upper surface of the base material 131.

[0128] Furthermore, this disclosure is not limited to the above-described embodiments, and various modifications can be made during implementation without departing from its main idea. Additionally, the embodiments can be appropriately combined, in which case the combined effects can be obtained.

[0129] <Correspondence for each item used in the scope of the claim>

[0130] Within the scope of the claims, the metal block 110 described in Embodiment 1 and the substrate 130 described in Embodiment 2 are referred to as bonding blocks.

[0131] Explanation of reference numerals in the attached figures

[0132] 10… Optical semiconductor module; 20… Sub-base; 21… Substrate; 22… Electrode pad; 23… Electrode pad; 30… Carrier; 40… Thermal module; 41… Metallization section; 42… Metallization section; 50… Bridging substrate; 51… Substrate; 52… Electrode pad; 53… Electrode pad; 60… Lead wire; 70… First solder; 80… Second solder; 90… Insulating adhesive; 100… Tube socket; 101… Tube socket protrusion; 102… Through hole; 104…Main surface; 105…First surface; 106…Second surface; 110…Metal block; 111…Block through hole; 112…Recess; 120…Pin; 121…Pin protrusion; 122…End face; 130…Substrate; 131…Main material; 132…First electrode pad; 133…Second electrode pad; 150…Heater; 160…Placement machine; 170…Scrubber; 200…Semiconductor device; 300…Prior semiconductor device.

Claims

1. A semiconductor device, characterized in that, have: Semiconductor modules; A socket, which mounts the semiconductor module, and has a socket protrusion that protrudes to the same side as the semiconductor module, and a through hole that extends from the main surface having the socket protrusion to the opposing surface of the main surface. A bridging substrate is disposed on the upper surface of the tube seat protrusion; The pin has a pin protrusion that passes through the through hole and protrudes to the same side as the tube seat protrusion; as well as Connecting block, The bonding block has a first surface and a second surface. The bonding block is bonded to the bridging substrate solder on the first surface and to the lead protrusion solder on the second surface. The solder used for solder bonding has a lower melting point than the melting point of the bonding block. The bridging substrate and the pins are electrically connected via the bonding block.

2. The semiconductor device according to claim 1, characterized in that, The connecting block is a block made of metal, or an electrical insulator covered by metal.

3. The semiconductor device according to claim 1, characterized in that, The bonding block is a substrate. The substrate comprises: Insulating base material; The first electrode pad is formed on the base material; as well as The second electrode pad is electrically connected to the first electrode pad. The first electrode pad is bonded to the bridging substrate by solder on the first surface. The second electrode pad and the pin protrusion are soldered together on the second surface.

4. The semiconductor device according to any one of claims 1 to 3, characterized in that, The engagement block engages with the end face or side face of the pin protrusion on the second surface.

5. The semiconductor device according to any one of claims 1 to 4, characterized in that, The second surface of the bonding block also has a cut or recess filled with the solder.

6. The semiconductor device according to claim 1 or 2, characterized in that, The second surface of the bonding block is the inner wall of a through hole through which the bonding block extends along the extension direction of the pin. The pin protrusion passes through the block through-hole and is bonded to the bonding block solder within the block through-hole.

7. The semiconductor device according to claim 1 or 2, characterized in that, The second surface of the joining block is the inner wall of the recessed portion of the joining block. The pin protrusion passes through the opening of the recess and engages with the solder of the bonding block within the recess.

8. The semiconductor device according to claim 1 or 2, characterized in that, The resistance of the bonding block is smaller than that of the solder.

9. A method for manufacturing a semiconductor device, comprising a method for manufacturing a semiconductor device equipped with a semiconductor module, characterized in that, include: In the first supply process, a first solder is supplied between the upper surface of the tube socket protrusion and the bridging substrate. The process of melting the first solder; The process of solidifying the first solder to join the tube seat protrusion to the bridging substrate; The process of placing the bonding block on the upper surface of the bridging substrate; In the second supply process, a second solder is supplied between the protrusion of the bonding block and the pin; The process of melting the second solder; and The process of solidifying the second solder and bonding the protruding portions of the bridging substrate and the pin to the bonding block, thereby electrically connecting the bridging substrate and the pin via the bonding block.

10. The method for manufacturing a semiconductor device according to claim 9, characterized in that, The melting point of the first solder is higher than that of the second solder.

11. The method for manufacturing a semiconductor device according to claim 9, characterized in that, The first solder and the second solder are the same.

12. The method for manufacturing a semiconductor device according to any one of claims 9 to 11, characterized in that, The first supply process includes the process of supplying the first solder to the upper surface of the tube seat protrusion.

13. The method for manufacturing a semiconductor device according to any one of claims 9 to 12, characterized in that, The second supply process includes: The process of supplying the second solder to the upper surface of the bridging substrate; and The process of wiping the bonding block to allow the second solder supplied to the bridging substrate to diffuse between the bonding block and the protrusion of the pin.

14. The method for manufacturing a semiconductor device according to any one of claims 9 to 12, characterized in that, The second supply process includes the process of applying the second solder to the protrusion of the pin.

15. A method for manufacturing a semiconductor device according to any one of claims 9 to 12, characterized in that, In the bonding block, the surface that bonds with the bridging substrate is designated as the first surface, and the surface that bonds with the protrusion of the pin is designated as the second surface. The second supply process includes the process of applying the second solder to the surface of the bonding block that includes the first surface and the second surface.

16. The method for manufacturing a semiconductor device according to any one of claims 13 to 15, characterized in that, The second supply process also includes a process of sputtering Au onto the surface of the supplied second solder.

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