A galvanometer dynamic flight splicing processing system and method

Abstract

The application discloses a galvanometer dynamic flight splicing processing system and method, and belongs to the technical field of thin-film solar cell manufacturing. The system comprises a motion platform module, a galvanometer scanning module and a motion synchronization control module. The motion platform drives the substrate to continuously move along the Y axis at a constant speed; a path planning unit divides the substrate into 50*50mm square field units and generates a serpentine scanning path; the motion synchronization control module collects displacement data in real time through an encoder, and a PLC controller controls the laser energy to linearly decay from 100% to 95% in a transition area of ±50μm at the splicing boundary, so that early triggering and seamless splicing are realized. Through continuous movement of the motion platform module, accurate laser etching of the galvanometer scanning module and real-time cooperation of the motion synchronization control module, the problems of low traditional processing efficiency, insufficient splicing precision and poor dynamic synchronization are effectively solved, and a feasible scheme is provided for large-scale high-precision manufacturing of thin-film solar cells.

Description

Technical Field

[0001] This invention relates to a galvanometer dynamic flying splicing processing system and method, belonging to the field of thin-film solar cell manufacturing technology. Background Technology

[0002] Existing laser etching processes for thin-film solar cells suffer from the following technical problems: First, the traditional step-by-step processing method involves platform movement, platform stopping, galvanometer etching, and platform re-movement to process the cell substrate. With the increasing size of cell substrates, such as 1-2 square meters, multiple start-stop positioning operations are required, with idle travel time exceeding 30%. Processing even 1 square meter substrates is too time-consuming to meet mass production demands. Second, the galvanometer scanning range is limited, and large-size processing requires multiple stitching operations. Traditional stitching relies on mechanical positioning, resulting in accumulated errors exceeding ±30 μm, leading to overlapping or gaps in the etching lines and creating "mura" defects. Third, the lack of real-time coordinated control between galvanometer scanning and platform movement makes the etching lines prone to misalignment at the stitching boundaries due to mechanical delays, affecting the cell's light transmittance and visual aesthetics. Summary of the Invention

[0003] To address the shortcomings of the existing technology, the present invention aims to provide a galvanometer dynamic flying splicing processing system and method, particularly relating to high-precision splicing control technology for large-format, small-area splicing under dynamic flying continuous processing mode.

[0004] According to an embodiment of the present invention, the first embodiment is provided as: a galvanometer dynamic flying splicing processing system, comprising:

[0005] A motion platform module, which carries a thin-film solar cell substrate, controls the thin-film solar cell substrate to move continuously along the Y-axis at a constant speed within a first speed range;

[0006] A galvanometer scanning module emits a laser beam onto the surface of a thin-film solar cell substrate and forms etching lines during continuous movement of the substrate.

[0007] The motion synchronization control module includes a platform encoder, a PLC controller, and a path planning unit;

[0008] The path planning unit divides the thin-film solar cell substrate into multiple rectangular field-of-view units, generates a continuous serpentine scanning path for each rectangular field-of-view unit, and sets a splicing boundary transition area for adjacent rectangular field-of-view units.

[0009] The platform encoder collects displacement data of the motion platform in real time and feeds it back to the PLC controller;

[0010] The PLC controller controls the energy gradient of the laser beam emitted by the galvanometer scanning module within the transition zone of the splicing boundary of adjacent rectangular field-of-view units, based on displacement data. The adjacent rectangular field-of-view units include a target field-of-view unit and a front field-of-view unit. The PLC controller triggers the galvanometer scanning module in advance within the front field-of-view range of the front field-of-view unit.

[0011] Furthermore, the overall feed direction of the motion platform module is defined as the Y-axis direction, and the vertical direction of the overall feed direction of the motion platform module on the horizontal plane is defined as the X-axis direction.

[0012] Furthermore, the first velocity range of the thin-film solar cell substrate along the Y-axis is 200 mm / s to 800 mm / s.

[0013] Furthermore, the laser beam parameters emitted by the galvanometer scanning module are as follows: the laser beam wavelength is 1064nm, the pulse width is in the picosecond to nanosecond range, and the laser beam linewidth is 10-50μm; the laser beam penetrates the back electrode layer and absorption layer of the thin-film solar cell substrate without damaging the transparent conductive oxide layer.

[0014] Furthermore, the rectangular field-of-view units divided by the path planning unit on the thin-film solar cell substrate are as follows: an effective area is selected on the thin-film solar cell substrate, and the effective area is divided into multiple 50×50mm units. 2 The rectangular field of view unit.

[0015] Furthermore, the continuous serpentine scanning path is the path formed by the galvanometer scanning module performing high-frequency reciprocating scanning on the X-axis and continuous movement on the Y-axis.

[0016] Furthermore, the transition zone of the stitching boundary of the adjacent rectangular field of view unit is: ±50μm along the Y-axis direction of the stitching boundary line between the front field of view unit and the target field of view unit;

[0017] The front field of view of the front field of view unit is -50μm along the Y-axis direction at the splicing boundary line of the front field of view unit;

[0018] The laser beam is triggered in advance at -50μm in the front field of view unit. When the laser beam moves from -50μm to the stitching boundary line, the laser beam energy decreases from 100% to 95%, with an attenuation coefficient of 0.1% / μm.

[0019] When the laser beam moves from the splicing boundary line to +50μm, the laser beam energy increases from 95% to 100%, with an increase factor of 0.1% / μm;

[0020] Energy adjustment is triggered by the PLC controller based on displacement data collected in real time by the platform encoder, with a response delay of ≤10μs.

[0021] According to an embodiment of the present invention, utilizing the galvanometer dynamic flying splicing processing system in the first solution provided by the present invention, a second solution is provided as follows:

[0022] A method for dynamic flying splicing of galvanometers includes the following steps:

[0023] S1: Fix the thin-film solar cell substrate onto the motion platform module;

[0024] S2: The path planning unit of the motion synchronization control module divides the thin-film solar cell substrate into multiple rectangular field-of-view units and sets a splicing boundary transition area for adjacent rectangular field-of-view units;

[0025] S3: Generate a continuous serpentine scanning path for each rectangular field of view unit using a galvanometer scanning module. The galvanometer scanning module performs high-frequency reciprocating scanning in the X-axis direction. At the same time, the motion platform module drives the thin-film solar cell substrate to move continuously along the Y-axis direction at a constant speed within the first speed range, forming a serpentine laser trajectory covering the target field of view unit.

[0026] S4: The displacement data of the motion platform is collected in real time through the platform encoder. The displacement data includes the real-time position coordinates and moving speed of the thin-film solar cell substrate, and the displacement data is fed back to the PLC controller.

[0027] When the laser beam emitted by the galvanometer scanning module enters the transition zone of the splicing boundary of adjacent rectangular field units, the PLC controller triggers the laser beam and controls the laser beam energy gradient according to the displacement data, thereby realizing the splicing of the etching lines of adjacent rectangular field units.

[0028] Furthermore, the step of the path planning unit dividing the thin-film solar cell substrate into multiple rectangular field-of-view units is as follows:

[0029] The initial position coordinates of the dividing reference point are determined based on the displacement data of the motion platform fed back by the platform encoder.

[0030] The actual length and width of the thin-film solar cell substrate are obtained using a CCD camera or laser rangefinder.

[0031] The maximum effective scanning range of the galvanometer scanning module is obtained, and an effective region is selected on the thin-film solar cell substrate through path planning, and the division of rectangular field-of-view units is calculated.

[0032] Furthermore, the steps of obtaining the actual length and width of the thin-film solar cell substrate using a CCD camera or laser rangefinder, obtaining the maximum effective scanning range of the galvanometer scanning module, selecting an effective area on the thin-film solar cell substrate through path planning, and calculating the division of rectangular field-of-view units include:

[0033] The actual length L and actual width W of the thin-film solar cell substrate are obtained using a laser rangefinder.

[0034] Based on the maximum effective scanning range of the galvanometer scanning module, the fixed size of the rectangular field of view unit is set to 50mm on the X-axis and 50mm on the Y-axis. The X-axis size is determined by the maximum distortion-free scanning width of the galvanometer optical system, and the Y-axis size is the same as the X-axis size to form a square unit.

[0035] Based on the actual size of the thin-film solar cell substrate and the size of the entire field of view unit, the number of rectangular field of view units divided along the Y-axis direction of the thin-film solar cell substrate and the number of rectangular field of view units divided along the X-axis direction are calculated to ensure complete coverage of the edge of the thin-film solar cell substrate.

[0036] Based on the calculated number of rectangular field-of-view units, the thin-film solar cell substrate is divided into Nx×Ny rectangular field-of-view unit grids, and the grid coordinates and grid number of each rectangular field-of-view unit are obtained.

[0037] Compared with the prior art, the unique advantages of the technical solution provided in this application are as follows:

[0038] By adopting a dynamic flight continuous processing mode, the motion platform moves continuously at a constant speed, and the galvanometer scanning is synchronized with the platform movement in real time, eliminating the idle travel time of traditional stepper processing, thus shortening the processing time of large-size thin-film solar cells and significantly improving processing efficiency.

[0039] The substrate is divided into 50×50 mm² rectangular field units by the path planning unit. Combined with the PLC controller's energy linear gradient adjustment in the transition area of ​​the splicing boundary and the real-time feedback of the encoder, the splicing error is reduced from the traditional ±30 μm to below ±3 μm, effectively eliminating Mura defects and greatly improving splicing accuracy.

[0040] The motion synchronization control module achieves sub-millisecond synchronization between the galvanometer serpentine path and the platform movement through closed-loop control of the platform encoder and PLC controller, ensuring seamless connection between adjacent field-of-view units, improving the yield rate to over 99%, and is compatible with various thin-film battery materials such as cadmium telluride and perovskite, effectively enhancing dynamic coordination. Attached Figure Description

[0041] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0042] in:

[0043] Figure 1 This is a structural block diagram of a galvanometer dynamic flying splicing processing system in one embodiment;

[0044] Figure 2 This is a flowchart illustrating the dynamic flight splicing method for galvanometers in one embodiment. Detailed Implementation

[0045] To enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0046] Example 1

[0047] In this embodiment, the laser etching process for thin-film solar cells presents the following technical problems: First, the traditional step-by-step processing method processes the battery substrate through platform movement, platform stopping, galvanometer etching, and platform re-movement. As the area of ​​the battery substrate continues to increase, large-size substrates, such as those measuring 1-2 square meters, require multiple start-stop positioning operations, with idle travel time exceeding 30%. Processing 1 square meter is too time-consuming and cannot meet mass production requirements. Second, the galvanometer scanning range is limited, and large-size processing requires multiple splicing operations. Traditional splicing relies on mechanical positioning, resulting in accumulated errors exceeding ±30 μm, leading to overlapping or gaps in the etching lines and forming "Mura" defects. Third, the lack of real-time coordinated control between galvanometer scanning and platform movement makes the etching lines prone to misalignment at the splicing boundaries due to mechanical delays, affecting the cell's light transmittance and visual aesthetics.

[0048] Specifically, thin-film solar cells are flexible cells, and thin-film solar cell substrates are flexible substrates.

[0049] Specific Mura defects refer to visual imperfections caused by uneven brightness or color, manifested as localized differences in brightness, color spots, or stripes.

[0050] The galvanometer dynamic flying splicing processing system of this embodiment, such as Figure 1 As shown, it includes:

[0051] (i) A motion platform module, wherein the motion platform module carries a thin-film solar cell substrate and controls the thin-film solar cell substrate to move continuously along the Y-axis at a constant speed within a first speed range;

[0052] Specifically, the motion platform module includes a vacuum adsorption stage with dimensions of 2.2m × 1.2m, a Y-axis linear motor drive system with a stroke of 2.5m, and a mechanical positioning mechanism with a positioning accuracy of ±5μm.

[0053] Specifically, for the substrate of a thin-film solar cell, taking a 1m×2m cadmium telluride thin-film substrate as an example, after the flexible substrate is positioned by a mechanical positioning mechanism, it is fixed by a vacuum adsorption stage with an adsorption force ≥0.08MPa; the substrate is controlled to move continuously along the Y-axis at a constant speed of 500mm / s, and the speed fluctuation during the movement is ≤±0.5%.

[0054] (ii) A galvanometer scanning module, wherein the galvanometer scanning module emits a laser beam onto the surface of the thin-film solar cell substrate and forms etching lines during the continuous movement of the thin-film solar cell substrate;

[0055] The galvanometer scanning module includes a 1064nm wavelength infrared laser with a maximum power of 100W, a maximum scanning angle of ±15° for the scanning galvanometer, an f-theta focusing lens with a focal length of 160mm, and a laser beam expander system.

[0056] The laser beam parameters emitted by the galvanometer scanning module are: laser wavelength 1064nm, pulse width 50ps (nanosecond level), and laser beam linewidth 300μm. By adjusting the laser power and pulse frequency, the laser beam is ensured to penetrate the back electrode layer (Mo, thickness 500nm) and absorption layer (CdTe, thickness 3μm) of the substrate without damaging the transparent conductive oxide layer (TCO, thickness 800nm).

[0057] (III) Motion synchronization control module, including platform encoder, PLC controller and path planning unit; the path planning unit divides the thin-film solar cell substrate into multiple rectangular field-of-view units, generates a continuous serpentine scanning path for the galvanometer scanning module to move in each rectangular field-of-view unit, and sets a splicing boundary transition zone for adjacent rectangular field-of-view units; the platform encoder collects the displacement data of the motion platform in real time and feeds it back to the PLC controller; the PLC controller controls the energy gradient of the laser beam emitted by the galvanometer scanning module in the splicing boundary transition zone of adjacent rectangular field-of-view units according to the displacement data, the adjacent rectangular field-of-view units include target field-of-view units and front field-of-view units, and the PLC controller triggers the galvanometer scanning module in advance within the front field-of-view range of the front field-of-view unit.

[0058] The path planning unit divides the 1m×2m substrate into rectangular field units and generates a serpentine path.

[0059] Rectangular field-of-view cell division: Select the effective area of ​​the substrate, for example, 0.95m×1.95m, and divide it into 19×39 rectangular field-of-view cells with a fixed size of 50mm on the X-axis and 50mm on the Y-axis. The X-axis size is determined by the distortion-free scanning width of the galvanometer, and the Y-axis size is of equal length. Calculate Nx=19, Ny=39, and the grid coordinates of each cell. For example, the coordinates of the cell in the i-th row and j-th column are (i×50mm, j×50mm) to ((i+1)×50mm, (j+1)×50mm). Set a ±50μm transition zone at the splicing boundary of adjacent cells.

[0060] Snake path generation: A continuous snake scanning path is generated for each field of view unit. The galvanometer scanning module reciprocates at a high frequency of 15kHz in the X-axis direction with a scanning range of 50mm. At the same time, the motion platform drives the substrate to move along the Y-axis at a speed of 500mm / s, forming an S-shaped laser trajectory covering the entire field of view unit. The spacing between adjacent etched lines in the trajectory is 200μm, which is calculated from the target transmittance of 45% and the line width of 30μm. 30μm / 45%≈66.7μm. In actual debugging, 200μm is taken to match the speed.

[0061] The platform encoder is a 24-bit absolute encoder, installed on the Y-axis drive motor shaft of the motion platform. It acquires platform displacement data in real time, including the real-time position coordinates and movement speed of the substrate, and feeds the data back to the PLC controller.

[0062] The PLC controller uses a Siemens S7-1214C PLC with an integrated motion control module. Based on the displacement data fed back by the platform encoder, it realizes the adjustment of the energy gradient at the splicing boundary and the advance trigger control.

[0063] Energy gradient adjustment: When the laser beam enters the ±50μm transition zone of the splicing boundary, the PLC controller controls the laser power to linearly decrease from 100% to 95%, with an attenuation coefficient of 0.1% / μm. At -50μm on the left side of the transition zone, the power is 40W (100%), and it decreases to 38W (95%) when it moves to the boundary 0μm. When it moves from the boundary 0μm to +50μm, the power increases linearly from 38W to 40W, with an increase coefficient of 0.1% / μm.

[0064] Early triggering: When the front field of view unit is processed to 50μm along the negative Y-axis (front field of view range) of the splicing boundary line, the PLC controller sends a trigger signal to the galvanometer scanning module to start the scanning of the target field of view unit and achieve seamless splicing.

[0065] This embodiment produces the following technical effects:

[0066] 1. Processing efficiency is significantly improved.

[0067] The motion platform moves continuously at a constant speed of 500 mm / s, with no pauses between galvanometer scanning and platform movement, eliminating the idle travel time of traditional stepper machining. Testing showed that the processing time for a 1m×2m substrate was reduced from the traditional 380 seconds to 205 seconds, improving processing efficiency by 46% and meeting mass production requirements.

[0068] 2. Significantly improved splicing accuracy

[0069] The path planning unit divides the substrate into 50×50mm² field units, reducing the number of stitching operations from the traditional 32 to 19. The PLC controller reduces the stitching error from the traditional ±30μm to ±2.8μm through energy gradient adjustment and real-time encoder feedback (0.1μm resolution). The etched lines have no overlap or gaps, and the surface light transmission uniformity difference is less than 2.5%, effectively eliminating Mura defects.

[0070] 3. Enhanced dynamic synchronization and material compatibility

[0071] The laser parameters of the galvanometer scanning module, with a wavelength of 1064nm, a pulse width of 50ps, and a linewidth of 300μm, ensure that the back electrode layer and the absorption layer are penetrated without damaging the TCO layer. The advance triggering mechanism of the PLC controller enables sub-millisecond synchronization between the galvanometer and the platform, and is compatible with various thin film materials such as cadmium telluride and perovskite, improving the yield to 99.6%.

[0072] This embodiment effectively solves the problems of low processing efficiency, insufficient splicing accuracy, and poor dynamic synchronization in traditional processes by continuously moving the motion platform module, performing precise laser etching by the galvanometer scanning module, and coordinating the motion synchronization control module in real time. It provides a feasible solution for the large-scale, high-precision manufacturing of thin-film solar cells.

[0073] Example 2

[0074] Based on Embodiment 1, this embodiment further proposes a dynamic flying mirror splicing processing system. In the laser etching process of thin-film solar cells, there is also the issue of considering the overall light transmittance of the etched substrate. Currently, there is no specific solution to this problem in the existing technology.

[0075] This embodiment further provides a galvanometer dynamic flying splicing processing system, including a transmittance control unit, which includes a speed sensor and a PID adjustment unit.

[0076] The speed sensor collects the actual speed of the motion platform module in real time, and the PID adjustment unit adjusts the centerline spacing of adjacent etching lines of the galvanometer scanning module in real time according to the target transmittance preset value and the actual speed to maintain the target transmittance deviation within 3%.

[0077] Specifically, the transmittance control unit uses an STM32H743 microcontroller connected to a PLC controller via an EtherCAT bus. The bus cycle is configured to be 1ms, the transmission frequency is 1kHz, and it supports real-time data transmission of 8 bytes / frame, including actual speed, center-to-center distance correction, and energy gradient instructions.

[0078] Specifically, the PID parameter range is preset according to the thin film material type:

[0079] Cadmium telluride material: Kp=1.0, Ti=0.2s, Td=0.08s;

[0080] Perovskite material: Kp=0.8, Ti=0.15s, Td=0.05s.

[0081] Adjustment logic: When the actual transmittance deviates When the deviation is less than 1% and lasts for 1 second, Kp is automatically increased to 1.2; when the deviation is less than 1% and lasts for 1 second, Kp is decreased to 0.8, and the integral time Ti and derivative time Td are adjusted proportionally in sync.

[0082] Where T0 is the preset value of the target transmittance, T a This represents the actual light transmittance.

[0083] Transition zone correction compensation: In the ±50μm transition zone at the splicing boundary, after receiving the Δd signal from the transmittance control unit, the PLC controller compensates for the energy gradient adjustment curve. If Δd is positive (spacing increases), the energy attenuation coefficient decreases from 0.1% / μm to 0.08% / μm to avoid a local decrease in transmittance due to increased spacing. If Δd is negative (spacing decreases), the energy attenuation coefficient increases to 0.12% / μm to prevent energy superposition from damaging the TCO layer.

[0084] This embodiment produces the following technical effects:

[0085] 1. Data interaction latency significantly reduced

[0086] The EtherCAT bus transmission frequency reaches 1kHz, and the data transmission delay is reduced from 20ms of traditional RS485 to less than 0.5ms, ensuring that the center spacing correction (Δd) can be adjusted within one control cycle when the platform speed changes abruptly, and the peak transmittance deviation is reduced from 3.5% to ≤2.8%.

[0087] 2. Elimination of steady-state error in transmittance

[0088] Adaptive PID parameter adjustment improves the accuracy of transmittance control for different materials:

[0089] Cadmium telluride substrate: steady-state error decreased from ±1.5% to ±0.8%;

[0090] Perovskite substrate: Overshoot decreased from 5% to <2%, with no sustained oscillation.

[0091] 3. Enhanced stability of collaborative control

[0092] The transition zone linkage control enables the energy gradient and spacing correction to work synergistically: within the ±50μm transition zone, the transmittance fluctuation is reduced from ±4% to ±1.2%, the TCO layer damage rate is reduced from 0.5% to 0.3%, and the splicing error is maintained within ±3μm, achieving dual optimization of high-precision splicing and high transmittance stability.

[0093] 4. Synergistic improvement in processing efficiency and yield

[0094] Processing tests on 1m×2m perovskite substrates showed that the empty path was further shortened due to the reduction in synergistic delay, and the decrease in transmittance fluctuations led to a reduction in defective products.

[0095] This embodiment solves the problems of data delay, parameter adaptability and logic linkage in the collaborative control of Scheme 3 by using real-time data interaction via EtherCAT bus, adaptive PID parameter adjustment and transition zone linkage control, and further improves the stability of light transmittance and splicing accuracy.

[0096] Example 3

[0097] To address the technical problems of low field-of-view segmentation efficiency, complex path generation logic, and insufficient splicing control precision in existing laser etching methods for thin-film solar cells, specifically: traditional methods require manual input of substrate dimensions and segmentation of processing areas, which takes up to 2 minutes per piece, and are prone to inconsistent edge unit sizes due to human error; serpentine path generation does not consider the dynamic scanning characteristics of the galvanometer, such as the matching relationship between scanning frequency and platform speed, resulting in actual etching line spacing fluctuations of ±15μm, poor transmittance stability, and a disconnect between path generation and actual processing; splicing boundary energy adjustment relies solely on preset parameters without incorporating real-time displacement feedback, resulting in response delays >20μs and splicing errors >±5μm.

[0098] To address the aforementioned technical problems, this embodiment provides a method for dynamic flying splicing of galvanometers, such as... Figure 2 As shown,

[0099] Including the following steps:

[0100] Step S101: Fix the thin-film solar cell substrate onto the motion platform module;

[0101] Specifically, a 1m×2m perovskite thin-film solar cell substrate is placed on the vacuum adsorption stage of the motion platform module. The CCD vision positioning system identifies the edge markers of the substrate and guides the mechanical positioning mechanism to position the substrate to the preset initial position (X=0mm, Y=0mm). After positioning is completed, vacuum adsorption is started to ensure that the substrate does not slip.

[0102] Step S102: The thin-film solar cell substrate is divided into multiple rectangular field-of-view units by the path planning unit of the motion synchronization control module, and a splicing boundary transition area is set for adjacent rectangular field-of-view units;

[0103] S21: Determine the dividing reference point. Collect the initial position coordinates (X=0mm, Y=0mm) of the motion platform through the platform encoder, and set this point as the reference origin (0,0) for the field of view unit division.

[0104] S22: Obtain the actual dimensions of the substrate. Start the laser rangefinder and scan along the X-axis (width direction) and Y-axis (length direction) of the substrate to obtain the actual dimensions: actual length L = 2000mm (Y-axis direction), actual width W = 1000mm (X-axis direction).

[0105] S23: Calculate the number of field units. Based on the maximum effective scanning range of the galvanometer scanning module, 50mm x 50mm, set the size of the rectangular field unit to 50mm x 50mm. The number of units Nx along the X-axis is 20 (rounded up to ensure edge coverage), and the number of units Ny along the Y-axis is 40, for a total of 800 units.

[0106] S24: Generate grid coordinates and indices. Generate grid coordinates for 800 rectangular field-of-view units using the path planning unit. Each unit is named according to the "X-axis indices - Y-axis indices" (e.g., X0-Y0, X0-Y1...X19-Y39), where:

[0107] The coordinates of the top left corner of the cell in the i-th row (X-axis) and j-th column (Y-axis) are (i×50mm, j×50mm), and the coordinates of the bottom right corner are ((i+1)×50mm, (j+1)×50mm).

[0108] The transition zone between adjacent units is ±50μm, meaning that the overlap in the Y-axis direction is 50μm. For example, the Y-coordinate of the lower right corner of X0-Y0 is 50.05mm, and the Y-coordinate of the upper left corner of X0-Y1 is 49.95mm, with an overlap of 100μm.

[0109] Step S103: Generate a continuous serpentine scanning path for each rectangular field of view unit using a galvanometer scanning module. The galvanometer scanning module performs high-frequency reciprocating scanning in the X-axis direction, while the motion platform module drives the thin-film solar cell substrate to move continuously along the Y-axis direction at a constant speed within a first speed range, forming a serpentine laser trajectory covering the target field of view unit.

[0110] The path planning unit generates a continuous serpentine scanning path for each field of view. Specific parameters are: X-axis scanning frequency: 12kHz, maximum distortion-free scanning frequency of the galvanometer, scanning range 50mm; Y-axis moving speed: 600mm / s, driven by a linear motor on the motion platform. When the galvanometer scans from left to right along the X-axis, the laser is activated to form etching lines with a line width of 35μm. When scanning from right to left, the laser is deactivated to avoid repeated etching, coordinating with the Y-axis movement to form an S-shaped trajectory. Dynamic scanning begins when the motion platform drives the substrate to move continuously along the Y-axis at a speed of 600mm / s. Simultaneously, the galvanometer scanning module starts scanning according to the generated serpentine path, with the laser pulse frequency set to 12kHz to ensure uniform spacing between etching lines.

[0111] Step S104: The displacement data of the motion platform is collected in real time by the platform encoder. The displacement data includes the real-time position coordinates and moving speed of the thin-film solar cell substrate, and the displacement data is fed back to the PLC controller.

[0112] When the laser beam emitted by the galvanometer scanning module enters the transition zone of the splicing boundary of adjacent rectangular field units, the PLC controller triggers the laser beam and controls the laser beam energy gradient according to the displacement data, thereby realizing the splicing of the etching lines of adjacent rectangular field units.

[0113] S41: Real-time displacement data acquisition. The platform encoder acquires the displacement data of the motion platform at a sampling frequency of 1kHz and uploads it to the PLC controller in real time. The data includes: real-time position coordinates (e.g., when the Y-axis coordinate = 500.000mm, the accuracy is ±0.1μm); actual moving speed (600mm / s ±0.3mm / s).

[0114] S42: Stitching boundary energy gradient adjustment, trigger condition: when the PLC controller detects that the scanning position of the current field of view unit reaches 50μm along the negative Y-axis of the stitching boundary line, it immediately sends a trigger signal to the galvanometer scanning module of the forward field of view unit.

[0115] Energy adjustment process:

[0116] Attenuation phase: When the laser beam moves from -50μm to the boundary line, the PLC controller controls the laser energy to linearly decrease from 100% (40W) to 95% (38W), with an attenuation coefficient of 0.1% / μm;

[0117] Rise phase: When the laser beam moves from the boundary line to +50μm, the energy increases linearly from 95% (38W) to 100% (40W), with a rise factor of 0.1% / μm.

[0118] After S104 completes the stitching process, steps S103-S104 are repeated until all 800 field units are scanned. The total processing time is 200 seconds. At the stitching boundary, overlap / gap is eliminated by energy gradient adjustment. The final stitching error is measured to be ±2.5μm.

[0119] Through the above methods and steps, this embodiment achieves the following technical effects:

[0120] Improved field of view division efficiency: The automated division process, from size acquisition to mesh generation, reduces the time from the traditional 2 minutes to 30 seconds, with a division accuracy of ±5μm;

[0121] Enhanced synergy between path generation and processing: The serpentine path is matched with the galvanometer scanning characteristics, reducing the etch line spacing fluctuation from ±15μm to ±1μm, and the transmittance uniformity difference is ≤2%;

[0122] Optimized splicing control accuracy and response speed: Real-time encoder feedback and fast PLC response, combined with energy gradient adjustment, reduce splicing error from the traditional ±30μm to ±2.5μm, and TCO layer damage rate <0.3%, which is significantly reduced compared to the traditional damage rate >5%.

[0123] Significantly improved processing efficiency: The continuous dynamic processing mode reduces the processing time of a 1m×2m substrate from the traditional 380 seconds to 200 seconds, meeting the requirements of mass production cycle time.

[0124] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), Rambus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0125] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0126] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A galvanometer dynamic flight stitching system, characterized in that, Comprise: A motion platform module, which carries a thin-film solar cell substrate, controls the continuous movement of the thin-film solar cell substrate along the Y-axis direction at a constant speed within a first speed range; A galvanometer scanning module, which emits a laser beam to the surface of the thin-film solar cell substrate and forms an etching line during the continuous movement of the thin-film solar cell substrate; A motion synchronization control module, which comprises a platform encoder, a PLC controller and a path planning unit; The path planning unit divides the thin-film solar cell substrate into multiple rectangular field-of-view units, generates a continuous snake-shaped scanning path for each rectangular field-of-view unit for the galvanometer scanning module to walk, and sets a splicing boundary transition zone for adjacent rectangular field-of-view units; The platform encoder collects displacement data of the motion platform in real time and feeds back to the PLC controller; The PLC controller controls the energy gradient of the laser beam emitted by the galvanometer scanning module in the splicing boundary transition zone of adjacent rectangular field-of-view units, including a target field-of-view unit and a previous field-of-view unit, according to the displacement data, and triggers the galvanometer scanning module in advance in the previous field-of-view range of the previous field-of-view unit; The path planning unit divides the rectangular field-of-view units on the thin-film solar cell substrate as follows: selecting an effective area on the thin-film solar cell substrate, dividing the effective area into a plurality of 50x50mm 2 rectangular field-of-view units; The splicing boundary transition zone of the adjacent rectangular field-of-view units is that the splicing boundary line of the previous field-of-view unit and the target field-of-view unit is ±50μm along the Y-axis direction; The previous field-of-view range of the previous field-of-view unit is -50μm of the previous field-of-view unit along the Y-axis direction of the splicing boundary line; The laser beam is triggered to start in advance at -50μm of the previous field-of-view unit, and when the laser beam moves from -50μm of the splicing boundary line to the splicing boundary line, the laser beam energy decays from 100% to 95%, with a decay coefficient of 0.1% / μm; When the laser beam moves from the splicing boundary line to +50μm, the laser beam energy increases from 95% to 100%, with an increase coefficient of 0.1% / μm; The energy adjustment is triggered by the PLC controller according to the displacement data collected by the platform encoder in real time, with a response delay ≤10μs.

2. The galvanometer dynamic flying splice system of claim 1, wherein, The overall feed direction of the motion platform module is defined as the Y-axis direction, and the vertical direction of the overall feed direction of the motion platform module in the horizontal plane is the X-axis direction.

3. The galvanometer dynamic flying splice system of claim 1, wherein, The first speed range of the thin-film solar cell substrate along the Y-axis direction is 200mm / s-800mm / s.

4. The galvanometer dynamic flying splice system of claim 1, wherein, The laser beam parameters emitted by the galvanometer scanning module are: the laser beam wavelength is 1064nm or 532nm or 355nm, the pulse width is picosecond to nanosecond, the laser beam line width is 10-500μm, and the laser beam penetrates the back electrode layer and the absorption layer of the thin-film solar cell substrate without damaging the transparent conductive oxide layer.

5. The galvanometer dynamic flying splice system of claim 1, wherein, The continuous snake-shaped scanning path is the path formed by the high-frequency reciprocating scanning of the galvanometer scanning module along the X-axis and the continuous movement along the Y-axis.

6. A galvanometer dynamic fly-cutting method, characterized by, The method is applied to the galvanometer dynamic flying splicing processing system of any one of claims 1-5, and the method comprises the steps of: S1: fixing the thin-film solar cell substrate on the motion platform module; S2: dividing the thin-film solar cell substrate into multiple rectangular field-of-view units by the path planning unit of the motion synchronization control module, and setting a splicing boundary transition zone for adjacent rectangular field-of-view units; S3: generating a continuous serpentine scanning path of the galvanometer scanning module for each rectangular field of view unit, the galvanometer scanning module high-frequency reciprocating scans in the X-axis direction, while the motion platform module drives the thin-film solar cell substrate to continuously move along the Y-axis direction at a constant speed within a first speed range, forming a serpentine laser track covering the target field of view unit; S4: collecting displacement data of the motion platform in real time through the platform encoder, the displacement data including real-time position coordinates and moving speed of the thin-film solar cell substrate, and feeding back the displacement data to the PLC controller; When the laser beam emitted by the galvanometer scanning module enters the splicing boundary transition area of the adjacent rectangular field of view unit, the PLC controller triggers the laser beam and controls the energy gradient of the laser beam according to the displacement data, realizing the splicing of the etching lines of the adjacent rectangular field of view unit.

7. The galvanometer dynamic fly-cutting machining method according to claim 6, wherein, The step of dividing the thin-film solar cell substrate into multiple rectangular field of view units by the path planning unit is: determining the initial position coordinates as the division reference point according to the displacement data of the motion platform fed back by the platform encoder; obtaining the actual length and actual width of the thin-film solar cell substrate through a CCD camera or a laser range finder; obtaining the maximum effective scanning range of the galvanometer scanning module, selecting an effective area on the thin-film solar cell substrate through path planning, and calculating the division of the rectangular field of view unit.

8. The galvanometer dynamic fly-cutting machining method according to claim 7, wherein, The step of obtaining the actual length and actual width of the thin-film solar cell substrate through a CCD camera or a laser range finder, obtaining the maximum effective scanning range of the galvanometer scanning module, selecting an effective area on the thin-film solar cell substrate through path planning, and calculating the division of the rectangular field of view unit includes: obtaining the actual length L and actual width W of the thin-film solar cell substrate through a laser range finder; according to the maximum effective scanning range of the galvanometer scanning module, setting the fixed size of the rectangular field of view unit as 50mm in the X-axis direction and 50mm in the Y-axis direction, wherein the X-axis size is determined by the maximum distortion-free scanning width of the galvanometer optical system, and the Y-axis size is equal to the X-axis size to form a square unit; based on the actual size of the thin-film solar cell substrate and the size of the entire field of view unit, calculating the number of divided rectangular field of view units along the Y-axis direction of the thin-film solar cell substrate, and calculating the number of divided rectangular field of view units along the X-axis direction, to ensure complete coverage of the edges of the thin-film solar cell substrate; dividing the thin-film solar cell substrate into Nx×Ny rectangular field of view unit grids according to the calculated number of rectangular field of view units, and obtaining the grid coordinates and grid serial numbers of each rectangular field of view unit.

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