Heat treatment device

Abstract

The invention relates to the technical field of semiconductors, and discloses a heat treatment device which comprises a reaction chamber, a wafer boat, a heater, a first temperature measuring piece, a second temperature measuring piece and a control assembly, the reaction chamber is provided with a reaction cavity, the wafer boat is arranged in the reaction cavity, and the first temperature measuring piece is used for measuring the temperature of the center area of the wafer boat; the second temperature measuring part is used for measuring the temperature of the edge area of the wafer boat, the control assembly is electrically connected with the heater, and the control assembly receives the first temperature signal and the second temperature signal and controls the heater. Through the arrangement of the first temperature measuring piece and the second temperature measuring piece, the temperatures of the center area and the edge area of the wafer boat can be measured in real time, the overall temperature of the wafer boat is uniform and stable, and the power of the heater is controlled according to the first temperature signal and the second temperature signal; and temperature deviation caused by distance difference between the heater and different parts of the wafer boat is compensated, so that the temperatures of the central area and the peripheral area of the wafer boat are uniform and consistent.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a heat treatment apparatus. Background Technology

[0002] This section provides only background information relevant to this disclosure and is not necessarily prior art.

[0003] In semiconductor manufacturing, heat treatment is one of the key steps, including oxidation, diffusion, chemical vapor deposition (CVD), and annealing. These processes are typically performed in vertical heat treatment equipment, which uses a wafer boat to support and transport the wafers.

[0004] However, existing heat treatment equipment suffers from temperature discrepancies between the center and periphery of the wafer due to the increased distance between the heater and the center of the wafer boat. Furthermore, it is impossible to measure the actual temperature of the rotating wafer boat in real time, making it difficult to achieve precise temperature control and thus affecting the quality of wafer heat treatment. Summary of the Invention

[0005] The objective of this invention is to at least solve the problem of temperature deviation between the center and periphery of a crystal boat, and the inability to measure the actual temperature of a rotating crystal boat in real time. This objective is achieved through the following technical solution:

[0006] A first aspect of the present invention provides a heat treatment apparatus for heat treating a semiconductor wafer, the heat treatment apparatus comprising a reaction chamber, a crystal boat, a heater, a temperature measuring component, and a control component;

[0007] The reaction chamber has a reaction cavity, and the crystal boat is disposed inside the reaction cavity for placing the wafer. The heater is arranged around the outside of the reaction chamber for heating the wafer. The temperature measurement component includes a first temperature measuring element and a second temperature measuring element. The first temperature measuring element is disposed at the center of the crystal boat for measuring the temperature of the central region of the crystal boat and generating a first temperature signal that is transmitted to the control component. The second temperature measuring element is disposed inside the reaction cavity for measuring the temperature of the edge region of the crystal boat and generating a second temperature signal that is transmitted to the control component. The control component is electrically connected to the heater. The control component receives the first temperature signal and the second temperature signal and controls the heater according to the first temperature signal and the second temperature signal.

[0008] The heat treatment apparatus of the present invention provides a first temperature measuring element at the center of the wafer boat and a second temperature measuring element near the edge of the wafer boat. The first temperature measuring element measures the temperature of the central region of the wafer boat and generates a first temperature signal which is transmitted to the control component. The second temperature measuring element measures the temperature of the edge region of the wafer boat and generates a second temperature signal which is transmitted to the control component. This allows for real-time temperature measurement of the central and edge regions of the wafer boat, ensuring uniform and stable temperatures in both areas. The control component receives the temperature signals from the first and second temperature measuring elements and controls the power of the heater based on these signals. This compensates for temperature deviations caused by differences in distance between the heater and different parts of the wafer boat, ensuring uniform and consistent temperatures in the central and peripheral regions of the wafer boat. This achieves precise temperature control of the wafer boat and guarantees the quality of the wafer's heat treatment.

[0009] In addition, the heat treatment apparatus according to the present invention may also have the following additional technical features:

[0010] In some embodiments of the present invention, the temperature measuring component further includes a third temperature measuring element, which is electrically connected to the heater and the control component respectively. The third temperature measuring element is used to measure the temperature of the heater and generate a third temperature signal that is transmitted to the control component.

[0011] In some embodiments of the present invention, the crystal boat includes a top plate, a bottom plate, and a first support column vertically connected between the top plate and the bottom plate. The first support column is located at the center of the top plate and the bottom plate. The first support column is provided with a first through hole, which extends through opposite ends of the first support column along the axial direction. The first temperature measuring element is disposed in the first through hole.

[0012] In some embodiments of the present invention, there are multiple first temperature measuring elements, and the multiple first temperature measuring elements are arranged at axial intervals along the first through hole.

[0013] In some embodiments of the present invention, the crystal boat further includes a plurality of second pillars vertically connected between the top plate and the bottom plate, the plurality of second pillars being arranged circumferentially between the top plate and the bottom plate, each second pillar being provided with a receiving groove, and the wafer being placed in the receiving groove.

[0014] In some embodiments of the present invention, a support unit is provided on the outer surface of the first pillar, the support unit is provided corresponding to the receiving groove, and the two ends of the wafer along the radial direction are respectively provided on the support unit and the receiving groove.

[0015] In some embodiments of the present invention, there are multiple support units and multiple receiving slots, with multiple support units spaced apart along the axial direction of the first support column and multiple receiving slots spaced apart along the axial direction of the second support column.

[0016] In some embodiments of the present invention, the support unit includes a plurality of support portions, which are spaced apart circumferentially along the first pillar.

[0017] In some embodiments of the present invention, the heat treatment apparatus further includes a sealing cover, one end of the reaction chamber is provided with an opening, the sealing cover is sealed to the opening of the reaction chamber, the sealing cover is provided with a second through hole that passes through both ends of the axial direction, the second through hole communicates with the first through hole, and the first temperature measuring element passes through the second through hole.

[0018] In some embodiments of the present invention, the heat treatment apparatus further includes a rotating mechanism, the rotating mechanism including a rotating table and a driving member, the crystal boat being disposed on the rotating table, the driving member being connected to the rotating table for driving the rotating table to rotate, the rotating table being provided with a third through hole penetrating both ends of the axial direction, the third through hole communicating with the first through hole and the second through hole. Attached Figure Description

[0019] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0020] Figure 1 A schematic diagram of the structure of a heat treatment apparatus according to an embodiment of the present invention is shown.

[0021] Figure 2 A top view of a heat treatment apparatus according to an embodiment of the present invention is shown schematically.

[0022] Figure 3 A partial structural diagram of a heat treatment apparatus according to an embodiment of the present invention is shown schematically. Figure 1 ;

[0023] Figure 4 A partial structural diagram of a heat treatment apparatus according to an embodiment of the present invention is shown schematically. Figure 2 ;

[0024] Figure 5 A schematic diagram of the connection of a heat treatment apparatus according to an embodiment of the present invention is shown.

[0025] The attached figures are labeled as follows:

[0026] 1. Reaction chamber; 11. Reaction cavity;

[0027] 2. Crystal boat; 21. Top plate; 22. Bottom plate; 23. First support column; 231. First through hole; 232. Support part; 24. Second support column; 241. Receiving groove;

[0028] 3. Heater;

[0029] 41. First temperature measuring element; 42. Second temperature measuring element; 43. Third temperature measuring element;

[0030] 5. Control components; 51. First PID controller; 52. Second PID controller; 53. Third PID controller; A. Preset temperature value;

[0031] 6. Wafers;

[0032] 7. Sealing cap;

[0033] 8. Rotary table;

[0034] 9. Fastening device. Detailed Implementation

[0035] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0036] It should be understood that the terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “described” as used herein may also include the plural forms. The terms “comprising,” “including,” “containing,” and “having” are inclusive and therefore indicate the presence of the stated features, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein are not construed as requiring them to be performed in a particular order described or illustrated unless the order of performance is explicitly indicated. It should also be understood that additional or alternative steps may be used.

[0037] Although terms such as first, second, third, etc., may be used in this document to describe multiple elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer, or segment from another. Unless the context clearly indicates otherwise, terms such as "first," "second," and other numerical terms used herein do not imply order or sequence. Therefore, the first element, component, region, layer, or segment discussed below may be referred to as the second element, component, region, layer, or segment without departing from the teachings of the exemplary embodiments.

[0038] For ease of description, spatial relative terms may be used in the text to describe the relationship of one element or feature relative to another element or feature, as shown in the figure. These relative terms include, for example, "inside," "outside," "middle," "outer," "below," "below," "above," "over," etc. Such spatial relative terms are intended to include different orientations of the device in use or operation, other than those depicted in the figure. For example, if the device in the figure is flipped, an element described as "below other elements or features" or "below other elements or features" would subsequently be oriented "above other elements or features" or "above other elements or features." Therefore, the example term "below" can include both upper and lower orientations.

[0039] In semiconductor manufacturing, heat treatment is one of the key steps, including oxidation, diffusion, chemical vapor deposition, and annealing. These processes are typically carried out in vertical heat treatment equipment, which uses a wafer boat to support and transport the wafers.

[0040] In related technologies, the increased distance between the heater 3 and the center of the crystal boat 2 leads to a temperature deviation between the center and the periphery of the crystal boat 2. Furthermore, it is impossible to measure the actual temperature of the rotating crystal boat 2 at any time, making it difficult to achieve precise temperature control and thus affecting the heat treatment quality of the wafer 6.

[0041] In view of this, this embodiment provides a heat treatment apparatus, which aims to measure the temperature of the central region and the edge region of the crystal boat 2 in real time by setting a first temperature measuring element 41 and a second temperature measuring element 42, so that the overall temperature of the crystal boat 2 is uniform and stable, and to control the power of the heater 3 according to the first temperature signal and the second temperature signal, so that the temperature of the central region and the peripheral region of the crystal boat 2 is uniform, thereby solving the above-mentioned technical problems.

[0042] like Figures 1 to 5As shown, according to an embodiment of the present invention, a heat treatment apparatus is provided for heat treatment of a semiconductor wafer 6, including a reaction chamber 1, a crystal boat 2, a heater 3, a temperature measuring component, and a control component 5.

[0043] The reaction chamber 1 has a reaction cavity 11, which provides a sealed environment for heat treatment processes. Inside the reaction chamber 1 is a reaction cavity 11 for accommodating the crystal boat 2 and the wafer 6. Heaters 3 are arranged in a ring around the outside of the reaction chamber 1 to heat the wafer 6. The heaters 3 are typically arranged in a ring or spiral shape to ensure uniform heat distribution.

[0044] The temperature measurement component includes a first temperature measuring element 41 and a second temperature measuring element 42. The first temperature measuring element 41 includes a first thermocouple, which is located at the center of the crystal boat 2. It measures the temperature of the central region of the crystal boat 2 and generates a first temperature signal that is transmitted to the control component 5. The output of the control component 5 is electrically connected to the heater 3. Specifically, the control component 5 includes a first PID controller 51. The first thermocouple is connected to the input of the first PID controller 51. The hot end of the first thermocouple is in direct contact with the temperature environment of the central region of the crystal boat 2, and the cold end of the first thermocouple is connected to the measuring instrument, which is usually at a known reference temperature (such as room temperature). Due to the temperature difference between the hot and cold ends, an electromotive force (voltage) is generated between the two conductors. The electromotive force is transmitted to the first PID controller 51 through a wire. The first PID controller 51 converts the electromotive force signal into a temperature value based on the electromotive force value and the material properties of the thermocouple (through a calibration curve or formula), thereby calculating the temperature of the center of the crystal boat 2, which is the first temperature value. The first PID controller 51 receives the first temperature signal and calculates a control signal based on the error between the preset temperature value A and the actual measured value, so as to control the power of the heater 3 and maintain the temperature at the center of the crystal boat 2 within the range of the preset temperature value A.

[0045] The second temperature measuring element 42 includes a second thermocouple, which is disposed inside the reaction chamber 11 to measure the temperature of the edge region of the crystal boat 2 and generate a second temperature signal that is transmitted to the control component 5. Specifically, the control component 5 includes a second PID controller 52. The second thermocouple is connected to the input terminal of the second PID controller 52. The hot end of the second thermocouple directly contacts the temperature environment near the inner wall of the reaction chamber 11, indirectly reflecting the temperature of the edge region of the crystal boat 2. Due to the temperature difference between the hot and cold ends, an electromotive force (voltage) is generated between the two conductors. The electromotive force is transmitted to the second PID controller 52 through a wire. The second PID controller 52 converts the electromotive force signal into a temperature value based on the electromotive force value and the material properties of the thermocouple, thereby calculating the temperature of the edge of the crystal boat 2, which is the second temperature value. The second PID controller 52 receives the second temperature signal and calculates a control signal based on the error between the preset temperature value A and the actual measured value, to control and adjust the power of the heater 3 to maintain the temperature of the edge of the crystal boat 2 within the range of the preset temperature value A.

[0046] The heat treatment apparatus of the present invention provides a first temperature measuring element 41 at the center of the crystal boat 2 and a second temperature measuring element 42 near the edge of the crystal boat 2. The first temperature measuring element 41 measures the temperature of the central region of the crystal boat 2 and generates a first temperature signal which is transmitted to the control component 5. The second temperature measuring element 42 measures the temperature of the edge region of the crystal boat 2 and generates a second temperature signal which is transmitted to the control component 5. This allows for real-time measurement of the temperature of the central and edge regions of the crystal boat 2, ensuring uniform and stable temperatures. The control component 5 receives the temperature signals from the first and second temperature measuring elements 41 and controls the power of the heater 3 based on the first and second temperature signals. This compensates for temperature deviations caused by differences in distance between the heater 3 and different parts of the crystal boat 2, ensuring uniform and consistent temperatures in the central and peripheral regions of the crystal boat 2. This achieves precise temperature control of the crystal boat 2 and guarantees the heat treatment quality of the wafer 6.

[0047] In some embodiments of the present invention, there are multiple second temperature measuring elements 42, which are spaced apart along the height of the reaction chamber 1 to measure the temperature at different locations on the edge of the crystal boat 2. Each second temperature measuring element 42 is mounted on the side wall of the reaction chamber 1. To prevent damage under high-temperature conditions, the second temperature measuring element 42 is typically protected by a protective tube (such as a quartz tube or ceramic tube). By using multiple second temperature measuring elements 42, the temperature at different locations on the edge of the crystal boat 2 can be measured, further improving the accuracy of temperature control. By precisely controlling the temperature of the edge of the crystal boat 2, it can be ensured that each wafer 6 is processed under the same heat treatment conditions, improving the consistency and repeatability of the process. In addition, the control component 5 can adjust the power of the heater 3 according to the temperature values ​​of multiple measuring points to maintain the temperature of the edge of the crystal boat 2 within a preset temperature value A.

[0048] In some embodiments of the present invention, the temperature measuring component further includes a third temperature measuring element 43, which is electrically connected to the heater 3 and the control component 5 respectively. The third temperature measuring element 43 is used to measure the temperature of the heater 3 and generate a third temperature signal that is transmitted to the control component 5.

[0049] Specifically, the control component 5 includes a third PID controller 53. A third temperature measuring element 43 is connected to the input terminal of the third PID controller 53. The third temperature measuring element 43 can be installed on the surface or inside the heater 3. The third temperature measuring element 43 contacts the heater 3 to accurately measure the temperature of the heater 3. The third temperature measuring element 43 includes a third thermocouple. The hot end of the third thermocouple directly contacts the heater 3. Due to the temperature difference between the hot and cold ends, an electromotive force (voltage) is generated between the two conductors. The electromotive force is transmitted to the third PID controller 53 through a wire. The third PID controller 53 converts the electromotive force signal into a temperature value based on the electromotive force value and the material properties of the thermocouple, thereby calculating the temperature of the heater 3, which is the third temperature value. The third PID controller 53 receives the third temperature signal and calculates a control signal based on the error between the preset temperature value A and the actual measured value to control the power of the heater 3 to maintain the temperature of the heater 3 within the range of the preset temperature value A. By setting a third temperature measuring element 43, the power of the heater 3 can be dynamically adjusted to ensure that the temperature of the heater 3 is within the range of the preset temperature value A, thereby indirectly controlling the temperature distribution in the reaction chamber 11 and improving the temperature stability and uniformity in the reaction chamber 11.

[0050] In some embodiments of the present invention, there are multiple third temperature measuring elements 43, which extend along the length of the heater 3 to measure the temperature at different locations on the heater 3. Each third temperature measuring element 43 is installed inside the heater 3, and to prevent damage under high-temperature conditions, it is typically protected by a protective tube (such as a quartz tube or ceramic tube). By using multiple third temperature measuring elements 43, the temperature at different locations on the heater 3 can be measured, further improving the accuracy of temperature control. By precisely controlling the temperature of the heater 3, it can be ensured that each wafer 6 is processed under the same heat treatment conditions, improving process consistency and repeatability. In addition, the third PID controller 53 can dynamically adjust the power of the heater 3 based on the temperature values ​​of multiple measuring points to ensure the uniformity of temperature distribution.

[0051] In other embodiments, the arrangement and number of temperature measuring elements can be adjusted according to process requirements to ensure uniform temperature distribution. For example, if a more uniform temperature distribution is required, temperature measuring elements can be added at different locations on the crystal boat 2 to achieve multi-point temperature measurement.

[0052] In some embodiments of the present invention, the crystal boat 2 includes a top plate 21, a bottom plate 22, and a first support column 23 vertically connected between the top plate 21 and the bottom plate 22. The first support column 23 is located at the center of the top plate 21 and the bottom plate 22. The first support column 23 is provided with a first through hole 231, which passes through opposite ends of the first support column 23 along the axial direction. A first temperature measuring element 41 is disposed in the first through hole 231.

[0053] Specifically, the top plate 21 and the bottom plate 22 are arranged opposite each other in a vertical direction, and their axes coincide. The first support column 23 is arranged vertically at the center of the top plate 21 and the bottom plate 22. The first support column 23 has a through hole 231 inside, which extends through both ends of the first support column 23 along its axial direction. The first through hole 231 is used to install the first temperature measuring element 41 (first thermocouple) so that the first temperature measuring element 41 can directly measure the temperature of the central region of the crystal boat 2. The first temperature measuring element 41 is usually protected by a protective tube (such as a quartz tube). The outer diameter of the protective tube is slightly smaller than the inner diameter of the first through hole 231 to ensure that the protective tube can be smoothly inserted into the first through hole 231.

[0054] The inner diameter of the first through-hole 231 is 10 mm larger than the outer diameter of the first temperature measuring element 41, providing sufficient space for the first temperature measuring element 41 during installation and use, avoiding interference with the inner wall of the first through-hole 231, and reducing heat loss. The inner diameter of the through-hole can be adjusted according to the outer diameter of the third thermocouple. For example, if a larger first thermocouple is used, the inner diameter of the first through-hole 231 needs to be increased accordingly to ensure that the first thermocouple can pass through smoothly with sufficient clearance.

[0055] During installation, the first temperature measuring element 41 is inserted into the first through hole 231 from one side of the bottom plate 22 of the crystal boat 2. The wire of the first temperature measuring element 41 extends to the outside of the crystal boat 2 through the first through hole 231 and is connected to the control component 5.

[0056] In some embodiments of the present invention, there are multiple first temperature measuring elements 41, which are spaced apart axially along the first through hole 231. The multiple first temperature measuring elements 41 are arranged axially at intervals within the first through hole 231, enabling them to measure the temperature at different height positions. The hot end of each temperature measuring element directly contacts the temperature environment at different height positions in the central region of the crystal boat 2. Through the multiple first temperature measuring elements 41, each element can measure the temperature at its location in real time, allowing for precise measurement of the temperature distribution along the height direction in the central region of the crystal boat 2. This reduces temperature deviations caused by height differences, thereby improving the temperature uniformity in the central region of the crystal boat 2. Precise temperature distribution monitoring and dynamic adjustment can improve the quality of the heat treatment process.

[0057] In some embodiments of the present invention, the crystal boat 2 further includes a plurality of second pillars 24 vertically connected between the top plate 21 and the bottom plate 22. The plurality of second pillars 24 are arranged at intervals along the circumference of the top plate 21 and the bottom plate 22. Each second pillar 24 is provided with a receiving groove 241, and the wafer 6 is placed in the receiving groove 241.

[0058] Specifically, there are multiple receiving slots 241, which are spaced apart along the axial direction of the second pillar 24, i.e., evenly distributed along the height direction of the second pillar 24, so that each wafer 6 has an independent support point in the vertical direction, avoiding mutual contact and interference between wafers 6. The distance between two adjacent receiving slots 241 is the same, which can improve the uniformity and efficiency of heat treatment. The shape and size of each receiving slot 241 are designed according to the size of the wafer 6, and can be circular, rectangular, or elliptical, etc.

[0059] In some embodiments of the present invention, a support unit is provided on the outer surface of the first pillar 23, and the support unit is correspondingly provided with the receiving groove 241. The two ends of the wafer 6 along the radial direction are respectively provided on the support unit and the receiving groove 241.

[0060] Specifically, there are multiple support units, which are spaced apart along the axial direction of the first pillar 23. By increasing the number of support units, multiple wafers 6 can be placed in layers, allowing more wafers 6 to be placed on the same wafer boat 2, improving the space utilization of the wafer boat 2, and thus improving the efficiency of heat treatment. One end of the wafer 6 is placed on the support unit on the outer surface of the first pillar 23, and the other end of the wafer 6 is placed in the receiving groove 241 on the second pillar 24. Both ends of the wafer 6 have stable support points, which keeps the wafer 6 stable during heat treatment and allows heat to be evenly transferred to the entire surface of the wafer 6.

[0061] In some embodiments of the present invention, the support unit includes a plurality of support portions 232, which are spaced apart circumferentially along the first pillar 23.

[0062] Specifically, in this embodiment, there are three support parts 232, each a support column with a length of 15mm. The three support parts 232 are spaced apart circumferentially along the first support column 23. Each support part 232 corresponds one-to-one with a plurality of receiving slots 241, and each layer can accommodate three wafers 6, increasing the number of wafers 6 that can be supported. The number of support columns can be adjusted according to the number of wafers 6 processed at one time, which in turn can be adjusted according to the equipment capacity and process requirements. For example, if the equipment capacity is large, the number of wafers 6 can be increased, and correspondingly, the size of the crystal boat 2 and the number of support columns need to be adjusted. The size (outer diameter) of the support part 232 can be adjusted according to the size of the wafer 6 and process requirements; larger wafers 6 may require larger support parts 232 to ensure stability.

[0063] In some embodiments of the present invention, the heat treatment apparatus further includes a sealing cover 7, one end of the reaction chamber 1 is provided with an opening, the sealing cover 7 is sealed and connected to the opening of the reaction chamber 1, the sealing cover 7 is provided with a second through hole that passes through both ends of the axial direction, the second through hole is connected to the first through hole 231, and the first temperature measuring element 41 passes through the second through hole.

[0064] Specifically, the sealing cover 7 is installed at one end of the reaction chamber 1. The sealing cover 7 can be connected to the opening of the reaction chamber 1 via threads, flanges, or other mechanical connections to seal the opening, preventing external gases from entering the reaction chamber 1, reducing contamination of the wafer 6 during heat treatment, and ensuring the stability and purity of the environment inside the reaction chamber 1. The sealing cover 7 is typically made of high-temperature resistant materials, such as quartz, ceramic, or high-temperature alloys, to ensure it does not deform or break under high-temperature conditions. The sealing cover 7 has a second through hole penetrating both ends of the axial direction for installing the first temperature measuring element 41. The second through hole communicates with the first through hole 231 in the first support 23, providing a channel for installing the first temperature measuring element 41. During installation, the first temperature measuring element 41 is inserted through the second through hole, extending into the first through hole 231, to measure the temperature of the central region of the crystal boat 2.

[0065] In some embodiments of the present invention, the heat treatment apparatus further includes a rotating mechanism, which includes a rotating table 8 and a driving member. The crystal boat 2 is disposed on the rotating table 8, and the driving member is connected to the rotating table 8 to drive the rotating table 8 to rotate. The rotating table 8 is provided with a third through hole that passes through both ends of the axial direction. The third through hole communicates with the first through hole 231 and the second through hole.

[0066] Specifically, the rotary table 8 is located inside the reaction chamber 1 and is used to support the crystal boat 2. The crystal boat 2 is fixed to the rotary table 8 by mechanical means (such as bolts or slots) to ensure the stability of the crystal boat 2 during rotation. The drive component is connected to the rotary table 8. The drive component can be a motor or other rotary drive device. The drive component is connected to the rotary table 8 by mechanical connection (such as coupling) to ensure that the rotary table 8 can rotate smoothly. The drive component is connected to the control component 5, which can adjust the rotation speed and rotation direction to adapt to different heat treatment process requirements. The rotary table 8 is provided with a third through hole that passes through both ends of the axial direction. The inner diameter of the third through hole is slightly larger than the outer diameter of the first temperature measuring element 41 to ensure that there is sufficient clearance between the temperature measuring element and the rotary table 8 during rotation to avoid mechanical interference. During installation, the first temperature measuring element 41 is inserted from the second through hole of the sealing cover 7, passes through the third through hole of the rotary table 8, and extends to the first through hole 231 in the first support 23 of the crystal boat 2, so that the first temperature measuring element 41 can pass smoothly and reach the central area of ​​the crystal boat 2.

[0067] In this embodiment, the heat treatment apparatus further includes a fastening device 9, located at the lower part of the sealing cover 7, for fixing the first temperature measuring element 41. The first temperature measuring element 41 remains stable within the first through hole 231, preventing it from shifting or vibrating during high temperature and rotation. Furthermore, by providing the fastening device 9, the sealing performance between the sealing cover 7 and the first through hole 231 can be ensured, preventing external gases from entering the reaction chamber 1 and guaranteeing the stability and purity of the environment within the reaction chamber 1.

[0068] The heat treatment apparatus of the present invention provides a first temperature measuring element 41 at the center of the crystal boat 2 and a second temperature measuring element 42 near the edge of the crystal boat 2. The first temperature measuring element 41 measures the temperature of the central region of the crystal boat 2 and generates a first temperature signal which is transmitted to the control component 5. The second temperature measuring element 42 measures the temperature of the edge region of the crystal boat 2 and generates a second temperature signal which is transmitted to the control component 5. This allows for real-time measurement of the temperature of the central and edge regions of the crystal boat 2, ensuring uniform and stable temperatures. The control component 5 receives the temperature signals from the first and second temperature measuring elements 41 and controls the power of the heater 3 based on the first and second temperature signals. This compensates for temperature deviations caused by differences in distance between the heater 3 and different parts of the crystal boat 2, ensuring uniform and consistent temperatures in the central and peripheral regions of the crystal boat 2. This achieves precise temperature control of the crystal boat 2 and guarantees the heat treatment quality of the wafer 6.

[0069] The above description is merely a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A heat treatment apparatus for heat treating semiconductor wafers, characterized in that, The heat treatment apparatus includes a reaction chamber, a crystal boat, a heater, a temperature measurement component, and a control component; The reaction chamber has a reaction cavity, and the crystal boat is disposed inside the reaction cavity for placing the wafer. The heater is arranged around the outside of the reaction chamber for heating the wafer. The temperature measurement component includes a first temperature measuring element and a second temperature measuring element. The first temperature measuring element is disposed at the center of the crystal boat for measuring the temperature of the central region of the crystal boat and generating a first temperature signal that is transmitted to the control component. The second temperature measuring element is disposed inside the reaction cavity for measuring the temperature of the edge region of the crystal boat and generating a second temperature signal that is transmitted to the control component. The control component is electrically connected to the heater. The control component receives the first temperature signal and the second temperature signal and controls the heater according to the first temperature signal and the second temperature signal.

2. The heat treatment apparatus according to claim 1, characterized in that, The temperature measurement component further includes a third temperature measuring element, which is electrically connected to the heater and the control component respectively. The third temperature measuring element is used to measure the temperature of the heater and generate a third temperature signal that is transmitted to the control component.

3. The heat treatment apparatus according to claim 1 or 2, characterized in that, The crystal boat includes a top plate, a bottom plate, and a first support column vertically connected between the top plate and the bottom plate. The first support column is located at the center of the top plate and the bottom plate. The first support column is provided with a first through hole, which extends through opposite ends of the first support column along the axial direction. The first temperature measuring element is disposed in the first through hole.

4. The heat treatment apparatus according to claim 3, characterized in that, The number of the first temperature measuring elements is multiple, and the multiple first temperature measuring elements are arranged at intervals along the axial direction of the first through hole.

5. The heat treatment apparatus according to claim 3, characterized in that, The crystal boat also includes a plurality of second pillars vertically connected between the top plate and the bottom plate. The plurality of second pillars are arranged at intervals along the circumference of the top plate and the bottom plate. Each second pillar is provided with a receiving groove, and the wafer is placed in the receiving groove.

6. The heat treatment apparatus according to claim 5, characterized in that, The outer surface of the first pillar is provided with a support unit, which is correspondingly provided with the receiving groove. The two ends of the wafer along the radial direction are respectively provided with the support unit and the receiving groove.

7. The heat treatment apparatus according to claim 6, characterized in that, The number of support units and receiving slots is multiple, with multiple support units spaced apart along the axial direction of the first support column and multiple receiving slots spaced apart along the axial direction of the second support column.

8. The heat treatment apparatus according to claim 6, characterized in that, The support unit includes multiple support parts, which are spaced apart circumferentially along the first pillar.

9. The heat treatment apparatus according to claim 3, characterized in that, The heat treatment device further includes a sealing cover. One end of the reaction chamber is provided with an opening. The sealing cover is sealed and connected to the opening of the reaction chamber. The sealing cover is provided with a second through hole that passes through both ends of the axial direction. The second through hole communicates with the first through hole. The first temperature measuring element passes through the second through hole.

10. The heat treatment apparatus according to claim 9, characterized in that, The heat treatment apparatus further includes a rotating mechanism, which includes a rotating table and a driving component. The crystal boat is disposed on the rotating table, and the driving component is connected to the rotating table to drive the rotating table to rotate. The rotating table is provided with a third through hole that passes through both ends of the axial direction, and the third through hole communicates with the first through hole and the second through hole.

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