A light-emitting diode and its forming method

Abstract

This invention discloses a light-emitting diode and its formation method. In the formation method of the light-emitting diode of this invention, a P-type contact layer is patterned to form a plurality of parallel first protrusions. A plurality of randomly arranged first conical grooves are formed on the side surface of the first protrusions. Then, a solution containing C8-BTBT organic small molecules is printed into the first conical grooves by inkjet printing process. Subsequently, a C8-BTBT organic small molecule single crystal structure is grown in the first conical grooves. The presence of this single crystal structure can change the light emission direction of the quantum well light-emitting layer, thereby improving the light emission efficiency of the light-emitting diode. Furthermore, the presence of the C8-BTBT organic small molecule single crystal structure and the silver nanowire conductive layer can improve the contact performance between the P-type contact layer and the transparent conductive layer, thereby improving the hole injection performance.

Description

Technical Field

[0001] This invention relates to the field of semiconductor light-emitting technology, and more specifically to a light-emitting diode and a method for forming the same. Background Technology

[0002] Like ordinary diodes, light-emitting diodes (LEDs) consist of a PN junction and exhibit unidirectional conductivity. When a forward voltage is applied to an LED, holes injected from the P-region into the N-region and electrons injected from the N-region into the P-region recombine with electrons in the N-region and holes in the P-region within a few micrometers of the PN junction, respectively, producing spontaneous emission of fluorescence. The energy states of electrons and holes differ in different semiconductor materials. The amount of energy released when electrons and holes recombine varies; the more energy released, the shorter the wavelength of the emitted light. Commonly used LEDs emit red, green, or blue light. The current manufacturing process for LEDs typically involves epitaxially growing a buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, and a P-type semiconductor layer sequentially on a substrate. Improving the LED manufacturing process to enhance hole injection efficiency and light extraction efficiency has attracted widespread attention. Summary of the Invention

[0003] To address the aforementioned problems in the prior art, this application provides a light-emitting diode and a method for forming the same.

[0004] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0005] An embodiment of this application provides a method for forming a light-emitting diode (LED), the method comprising the following steps:

[0006] Provide growth substrate.

[0007] A buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, an electron blocking layer, a P-type semiconductor layer, and a P-type contact layer are epitaxially grown on the growth substrate.

[0008] The P-type contact layer is patterned to form multiple parallel first protrusions.

[0009] A plurality of first conical grooves are formed on the side surface of the first protrusion in a random arrangement.

[0010] Preparation of a solution containing C8-BTBT organic small molecules: Dissolve C8-BTBT organic small molecules in a mixed solvent consisting of a good solvent and a poor solvent to form a solution containing C8-BTBT organic small molecules.

[0011] A solution containing C8-BTBT organic small molecules is printed into the first conical groove using an inkjet printing process, thereby growing a C8-BTBT organic small molecule single crystal structure in the first conical groove.

[0012] A silver nanowire conductive layer is formed on the first protrusion.

[0013] Next, a transparent conductive layer is deposited on the silver nanowire conductive layer.

[0014] In a preferred embodiment, the buffer layer includes a stacked aluminum oxynitride layer, a first aluminum nitride layer, and a second aluminum nitride layer. The second aluminum nitride layer includes a lower surface in contact with the first aluminum nitride layer and an upper surface away from the first aluminum nitride layer. From the lower surface to the upper surface, the gallium doping concentration in the second aluminum nitride layer gradually increases.

[0015] In a preferred embodiment, the N-type semiconductor layer is an N-type AlGaN layer, the P-type semiconductor layer is a P-type AlGaN layer, the quantum well light-emitting layer includes alternating stacked AlGaN quantum well layers and AlGaN quantum barrier layers, and the P-type contact layer is a P-type GaN layer.

[0016] In a preferred embodiment, the electron blocking layer comprises a stacked MgInGaN layer, a Ga2O3 layer, and a MgGaN layer.

[0017] In a preferred embodiment, the good solvent is toluene, chlorobenzene, or chloroform, and the poor solvent is N,N-dimethylformamide or dimethyl phthalate.

[0018] In a preferred embodiment, the concentration of C8-BTBT organic small molecules in the solution containing C8-BTBT organic small molecules is 1-5 mg / ml.

[0019] In a preferred embodiment, the silver nanowire conductive layer is formed by a spraying process.

[0020] In a preferred embodiment, the silver nanowire conductive layer is formed by spraying a suspension containing silver nanowires, wherein the concentration of silver nanowires in the suspension is 30-60 mg / mL.

[0021] The present invention also proposes a light-emitting diode (LED), which is formed by the above-described LED formation method. The LED wafer includes a buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, an electron blocking layer, a P-type semiconductor layer, a P-type contact layer, a silver nanowire conductive layer, and a transparent conductive layer stacked together. The surface of the P-type contact layer has a plurality of parallel first protrusions, and the side surface of the first protrusions has a plurality of randomly arranged first conical grooves. A C8-BTBT organic small molecule single crystal structure is disposed in the first conical groove.

[0022] Compared with the prior art, the light-emitting diode and its formation method of the present invention have the following advantages:

[0023] In the method for forming a light-emitting diode of the present invention, a plurality of parallel first protrusions are formed by patterning the P-type contact layer, and a plurality of randomly arranged first conical grooves are formed on the side surface of the first protrusions. Then, a solution containing C8-BTBT organic small molecules is printed into the first conical grooves by inkjet printing process, thereby growing a C8-BTBT organic small molecule single crystal structure in the first conical grooves. The presence of this single crystal structure can change the light emission direction of the quantum well light-emitting layer, thereby improving the light emission efficiency of the light-emitting diode. Furthermore, the presence of the C8-BTBT organic small molecule single crystal structure and the silver nanowire conductive layer can improve the contact performance between the P-type contact layer and the transparent conductive layer, thereby improving the hole injection performance. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of the structure of the buffer layer, N-type semiconductor layer, quantum well light-emitting layer, electron blocking layer, P-type semiconductor layer and P-type contact layer epitaxially grown on the growth substrate in this application.

[0026] Figure 2 This is a schematic diagram of the structure in this application where the P-type contact layer is patterned to form multiple parallel first protrusions.

[0027] Figure 3 This is a schematic diagram of the structure in this application in which a plurality of first conical grooves are formed in a random arrangement on the side surface of the first protrusion.

[0028] Figure 4This is a schematic diagram of the structure of C8-BTBT organic small molecule single crystal grown in the first conical groove in this application.

[0029] Figure 5 This is a schematic diagram of the structure in this application where a silver nanowire conductive layer and a transparent conductive layer are formed on a P-type semiconductor layer.

[0030] Explanation of reference numerals in the attached figures:

[0031] 100, Growth substrate; 200, Buffer layer; 300, N-type semiconductor layer; 400, Quantum well light-emitting layer; 500, Electron blocking layer; 600, P-type semiconductor layer; 700, P-type contact layer; 701, First protrusion; 800, First conical groove; 900, C8-BTBT organic small molecule single crystal structure; 1000, Composite conductive layer. Detailed Implementation

[0032] The following detailed description of the embodiments of this application, in conjunction with the accompanying drawings, will provide a thorough understanding of how this application uses technical means to solve technical problems and achieve corresponding technical effects, enabling its implementation. The embodiments of this application and the various features within them can be combined with each other without conflict, and the resulting technical solutions are all within the protection scope of this application. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0033] It should be understood that although the terms "first," "second," "third," etc., may be used to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or part from another element, component, area, layer, or part. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or part discussed below may be referred to as the second element, component, area, layer, or part.

[0034] It should be understood that spatial relation terms such as "above," "located above," "below," "located below," etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as "below other elements" will be oriented "above" other elements or features. Therefore, the exemplary terms "below" and "below" can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0035] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0036] Embodiments of this application are described herein with reference to cross-sectional views illustrating ideal embodiments (and intermediate structures). Thus, variations in the shape shown can be anticipated due to, for example, fabrication techniques and / or tolerances. Therefore, embodiments of this application should not be limited to the specific shape of the region shown herein, but should include shape deviations due to, for example, fabrication processes.

[0037] To fully understand this application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0038] An embodiment of this application provides a method for forming a light-emitting diode (LED), the method comprising the following steps:

[0039] like Figure 1 As shown, a growth substrate 100 is provided. The growth substrate 100 can be a sapphire substrate, a silicon substrate or a silicon carbide substrate. In a specific embodiment of the present invention, the growth substrate 100 is a sapphire substrate.

[0040] like Figure 1 As shown, a buffer layer 200, an N-type semiconductor layer 300, a quantum well light-emitting layer 400, an electron blocking layer 500, a P-type semiconductor layer 600, and a P-type contact layer 700 are epitaxially grown on the growth substrate 100.

[0041] In a specific embodiment, the buffer layer 200 includes a stacked aluminum oxynitride layer, a first aluminum nitride layer, and a second aluminum nitride layer. The second aluminum nitride layer includes a lower surface in contact with the first aluminum nitride layer and an upper surface away from the first aluminum nitride layer. From the lower surface to the upper surface, the gallium doping concentration in the second aluminum nitride layer gradually increases.

[0042] In a specific embodiment, the specific preparation process of the buffer layer 200 is as follows: an aluminum oxynitride layer is formed by magnetron sputtering. The specific conditions of the magnetron sputtering process are as follows: pure aluminum palladium material is selected, inert argon gas is introduced as the sputtering gas, and nitrogen and oxygen are introduced as nitrogen source and oxygen source, respectively. The volume ratio of nitrogen to oxygen is adjusted to 1:1 to 5:1, the magnetron sputtering frequency is adjusted to 500-2000W, the magnetron sputtering temperature is adjusted to 200-500℃, and the gas pressure in the chamber during sputtering is 0.1-0.5Pa, so as to grow an aluminum oxynitride layer with a thickness of 10-40 nanometers. More specifically, the thickness of the aluminum oxynitride layer is 10 nanometers, 15 nanometers, 20 nanometers, 25 nanometers, 30 nanometers, 35 nanometers, and 40 nanometers.

[0043] In a specific embodiment, an aluminum nitride layer is formed by magnetron sputtering. The specific conditions of the magnetron sputtering process are as follows: pure aluminum palladium material is selected, inert argon gas is introduced as the sputtering gas, and nitrogen gas is introduced as the nitrogen source and oxygen source. The magnetron sputtering frequency is adjusted to 500-2000W, the magnetron sputtering temperature is adjusted to 200-500℃, and the gas pressure in the chamber during sputtering is 0.1-0.5Pa, so as to grow an aluminum nitride layer with a thickness of 30-150 nanometers. More specifically, the thickness of the aluminum nitride layer is 30 nanometers, 50 nanometers, 70 nanometers, 90 nanometers, 110 nanometers, 130 nanometers, and 150 nanometers.

[0044] In a specific embodiment, a second aluminum nitride layer is grown using metal-organic chemical vapor deposition (MOCVD). Trimethylaluminum is used as the aluminum source, ammonia as the nitrogen source, and trimethylgallium as the gallium source. The growth temperature is 900-1200℃, and the gas pressure in the reaction chamber is 10-200 Torr. The flow rates of the aluminum, nitrogen, and gallium sources are adjusted, with the molar flow rate ratio of nitrogen (ammonia) to aluminum (trimethylaluminum) being 1500-3000 and the molar flow rate ratio of trimethylgallium to trimethylaluminum being 0.01-0.2. By adjusting these growth processes, a gallium-doped aluminum nitride layer is formed. Furthermore, the gallium doping concentration in the second aluminum nitride layer, from the lower surface to the upper surface, ranges from (1×10¹⁰) to (1×10¹⁰). 6 cm⁻³-5×10¹ 6 (cm⁻³) gradually increases to (2×10) 19 cm⁻³-7×10 19 (cm⁻³), to grow a second aluminum nitride layer with a thickness of 20-100 nanometers, more specifically, the thickness of the second aluminum nitride layer is 20 nanometers, 35 nanometers, 50 nanometers, 65 nanometers, 80 nanometers, 90 nanometers and 100 nanometers.

[0045] In a specific embodiment, the N-type semiconductor layer 300 can be specifically an N-type aluminum gallium nitride layer, the P-type semiconductor layer 600 can be specifically a P-type aluminum gallium nitride layer, the quantum well light-emitting layer 400 can be specifically an alternating stacked AlGaN quantum well layer and AlGaN quantum barrier layer, the P-type contact layer 700 is a P-type GaN layer, and the N-type semiconductor layer 300, the quantum well light-emitting layer 400, the P-type semiconductor layer 600 and the P-type contact layer 700 are formed by metal-organic chemical vapor deposition technology.

[0046] In a specific embodiment, the electron blocking layer 500 includes a stacked MgInGaN layer, a Ga2O3 layer, and a MgGaN layer. The electron blocking layer 500 is formed by metal-organic chemical vapor deposition. By setting the electron blocking layer 500, electrons can be effectively blocked while promoting the injection of holes into the quantum well light-emitting layer 400.

[0047] like Figure 2 As shown, the P-type contact layer 700 is patterned to form a plurality of parallel first protrusions 701.

[0048] In a specific embodiment, the P-type contact layer 700 is patterned using a wet etching process or a dry etching process to form a plurality of parallel first protrusions 701.

[0049] In a specific embodiment, the cross-sectional shape of the first protrusion 701 is triangular, trapezoidal, or semi-circular.

[0050] like Figure 3 As shown, a plurality of first conical grooves 800 are formed randomly on the side surface of the first protrusion 701.

[0051] In a specific embodiment, a plurality of randomly arranged first conical grooves 800 are formed on the side surface of the first protrusion 701 by laser etching process.

[0052] Preparation of a solution containing C8-BTBT organic small molecules: Dissolve C8-BTBT organic small molecules in a mixed solvent consisting of a good solvent and a poor solvent to form a solution containing C8-BTBT organic small molecules.

[0053] In a specific embodiment, the good solvent is toluene, chlorobenzene, or chloroform, and the poor solvent is N,N-dimethylformamide or dimethyl phthalate.

[0054] In a specific embodiment, the concentration of C8-BTBT organic small molecules in the solution containing C8-BTBT organic small molecules is 1-5 mg / ml.

[0055] In a specific embodiment, a mixed solvent is formed by mixing one of toluene, chlorobenzene, and chloroform with N,N-dimethylformamide or dimethyl phthalate, wherein the volume ratio of the two is 5:1, 6:1, 7:1, 8:1, 9:1, or 10:1. Then, the C8-BTBT organic small molecule is dissolved in the mixed solvent to form a solution containing the C8-BTBT organic small molecule, wherein the concentration of the C8-BTBT organic small molecule in the solution is 1 mg / ml, 1.5 mg / ml, 2 mg / ml, 2.5 mg / ml, 3 mg / ml, 3.5 mg / ml, 4 mg / ml, 4.5 mg / ml, or 5 mg / ml.

[0056] like Figure 4 As shown, a solution containing C8-BTBT organic small molecules is printed into the first conical groove 800 using an inkjet printing process, and then a C8-BTBT organic small molecule single crystal structure 900 is grown in the first conical groove 800.

[0057] In a specific embodiment, by adjusting the dosage of each inkjet print, when the solution containing C8-BTBT organic small molecules is printed onto the first conical groove 800, the solvent evaporates, causing the C8-BTBT organic small molecules to begin crystallizing, thereby forming a high-quality C8-BTBT organic small molecule single crystal structure 900. Through multiple inkjet prints, the C8-BTBT organic small molecule single crystal structure 900 fills the first conical groove 800.

[0058] like Figure 5 As shown, a silver nanowire conductive layer is formed on the first protrusion 701, and then a transparent conductive layer is deposited on the silver nanowire conductive layer to form a composite conductive layer 1000.

[0059] In a specific embodiment, the silver nanowire conductive layer is formed by a spraying process. More specifically, the silver nanowire conductive layer is formed by spraying a suspension containing silver nanowires, wherein the concentration of silver nanowires in the suspension is 30-60 mg / mL.

[0060] In a more specific embodiment, the concentration of silver nanowires in the suspension containing silver nanowires is adjusted to 30 mg / mL, 35 mg / mL, 40 mg / mL, 45 mg / mL, 50 mg / mL, 55 mg / mL, or 60 mg / mL, and then the silver nanowire conductive layer is formed by multiple sprayings, specifically 5-10 times, to form a silver nanowire conductive layer of appropriate thickness.

[0061] In a specific embodiment, ITO or AZO is formed as a transparent conductive layer using a low-temperature deposition technique.

[0062] like Figure 5 As shown, the present invention also proposes a light-emitting diode (LED), which is formed using the above-described LED formation method. The LED wafer includes a buffer layer 200, an N-type semiconductor layer 300, a quantum well light-emitting layer 400, an electron blocking layer 500, a P-type semiconductor layer 600, a P-type contact layer 700, and a composite conductive layer 1000 stacked together. The composite conductive layer 1000 includes a silver nanowire conductive layer and a transparent conductive layer. The surface of the P-type contact layer 700 has a plurality of parallel first protrusions 701, and the side surface of the first protrusions 701 has a plurality of randomly arranged first conical grooves 800. A C8-BTBT organic small molecule single crystal structure 900 is disposed in the first conical groove 800.

[0063] An embodiment of this application provides a method for forming a light-emitting diode (LED), the method comprising the following steps:

[0064] Provide growth substrate.

[0065] A buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, an electron blocking layer, a P-type semiconductor layer, and a P-type contact layer are epitaxially grown on the growth substrate.

[0066] The P-type contact layer is patterned to form multiple parallel first protrusions.

[0067] A plurality of first conical grooves are formed on the side surface of the first protrusion in a random arrangement.

[0068] Preparation of a solution containing C8-BTBT organic small molecules: Dissolve C8-BTBT organic small molecules in a mixed solvent consisting of a good solvent and a poor solvent to form a solution containing C8-BTBT organic small molecules.

[0069] A solution containing C8-BTBT organic small molecules is printed into the first conical groove using an inkjet printing process, thereby growing a C8-BTBT organic small molecule single crystal structure in the first conical groove.

[0070] A silver nanowire conductive layer is formed on the first protrusion.

[0071] Next, a transparent conductive layer is deposited on the silver nanowire conductive layer.

[0072] Furthermore, the buffer layer includes a stacked aluminum oxynitride layer, a first aluminum nitride layer, and a second aluminum nitride layer. The second aluminum nitride layer includes a lower surface in contact with the first aluminum nitride layer and an upper surface away from the first aluminum nitride layer. From the lower surface to the upper surface, the gallium doping concentration in the second aluminum nitride layer gradually increases.

[0073] Furthermore, the N-type semiconductor layer is an N-type AlGaN layer, the P-type semiconductor layer is a P-type AlGaN layer, the quantum well light-emitting layer includes alternating stacked AlGaN quantum well layers and AlGaN quantum barrier layers, and the P-type contact layer is a P-type GaN layer.

[0074] Furthermore, the electron blocking layer comprises a stacked MgInGaN layer, a Ga2O3 layer, and a MgGaN layer.

[0075] Furthermore, the good solvent is toluene, chlorobenzene, or chloroform, and the poor solvent is N,N-dimethylformamide or dimethyl phthalate.

[0076] Furthermore, the concentration of C8-BTBT organic small molecules in the solution containing C8-BTBT organic small molecules is 1-5 mg / ml.

[0077] Furthermore, the silver nanowire conductive layer is formed through a spraying process.

[0078] Furthermore, the silver nanowire conductive layer is formed by spraying a suspension containing silver nanowires, wherein the concentration of silver nanowires in the suspension is 30-60 mg / mL.

[0079] The present invention also proposes a light-emitting diode (LED), which is formed by the above-described LED formation method. The LED wafer includes a buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, an electron blocking layer, a P-type semiconductor layer, a P-type contact layer, a silver nanowire conductive layer, and a transparent conductive layer stacked together. The surface of the P-type contact layer has a plurality of parallel first protrusions, and the side surface of the first protrusions has a plurality of randomly arranged first conical grooves. A C8-BTBT organic small molecule single crystal structure is disposed in the first conical groove.

[0080] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for forming a light-emitting diode, characterized in that: The method for forming the light-emitting diode includes the following steps: Provide growth substrate; A buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, an electron blocking layer, a P-type semiconductor layer, and a P-type contact layer are epitaxially grown on the growth substrate. The P-type contact layer is patterned to form multiple parallel first protrusions; A plurality of first conical grooves are formed on the side surface of the first protrusion in a random arrangement; Preparation of a solution containing C8-BTBT organic small molecules: Dissolve C8-BTBT organic small molecules in a mixed solvent consisting of a good solvent and a poor solvent to form a solution containing C8-BTBT organic small molecules; A solution containing C8-BTBT organic small molecules is printed into the first conical groove using an inkjet printing process, thereby growing a C8-BTBT organic small molecule single crystal structure in the first conical groove. A silver nanowire conductive layer is formed on the first protrusion; Next, a transparent conductive layer is deposited on the silver nanowire conductive layer.

2. The method for forming a light-emitting diode according to claim 1, characterized in that: The buffer layer includes a stacked aluminum oxynitride layer, a first aluminum nitride layer, and a second aluminum nitride layer. The second aluminum nitride layer includes a lower surface in contact with the first aluminum nitride layer and an upper surface away from the first aluminum nitride layer. From the lower surface to the upper surface, the gallium doping concentration in the second aluminum nitride layer gradually increases.

3. The method for forming a light-emitting diode according to claim 1, characterized in that: The N-type semiconductor layer is an N-type AlGaN layer, the P-type semiconductor layer is a P-type AlGaN layer, the quantum well light-emitting layer includes alternating stacked AlGaN quantum well layers and AlGaN quantum barrier layers, and the P-type contact layer is a P-type GaN layer.

4. The method for forming a light-emitting diode according to claim 1, characterized in that: The electron blocking layer comprises a stacked MgInGaN layer, a Ga2O3 layer, and a MgGaN layer.

5. The method for forming a light-emitting diode according to claim 1, characterized in that: The good solvent is toluene, chlorobenzene, or chloroform, and the bad solvent is N,N-dimethylformamide or dimethyl phthalate.

6. The method for forming a light-emitting diode according to claim 5, characterized in that: The concentration of C8-BTBT organic small molecules in the solution is 1-5 mg / ml.

7. The method for forming a light-emitting diode according to claim 1, characterized in that: The silver nanowire conductive layer is formed by a spraying process.

8. The method for forming a light-emitting diode according to claim 1, characterized in that: The silver nanowire conductive layer is formed by spraying a suspension containing silver nanowires, wherein the concentration of silver nanowires in the suspension is 30-60 mg / mL.

9. A light-emitting diode, characterized in that, The light-emitting diode is formed using the light-emitting diode forming method according to any one of claims 1-8. The light-emitting diode wafer includes a buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, an electron blocking layer, a P-type semiconductor layer, a P-type contact layer, a silver nanowire conductive layer, and a transparent conductive layer stacked together. The surface of the P-type contact layer has a plurality of parallel first protrusions, and the side surface of the first protrusions has a plurality of randomly arranged first conical grooves. A C8-BTBT organic small molecule single crystal structure is disposed in the first conical groove.

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