Imaging apparatus and method of manufacturing imaging apparatus

Abstract

This imaging device is provided with: a solid-state imaging element having a light-receiving surface on a base, on which a plurality of pixels including photoelectric conversion regions for converting incident light into electrical signals are arranged in a two-dimensional array pattern; and a base having a curved storage portion provided with a curved surface recessed in an incident direction of the incident light, and storing the solid-state imaging element. A rear surface of the base facing the light receiving surface and the curved surface are formed to face each other, and the solid-state imaging element is arranged in a curved state in the curved storage portion.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to an imaging device and a method of manufacturing an imaging device. BACKGROUND

[0002] Patent Literature 1 discloses an imaging device in which a solid-state imaging element and an imaging lens are combined. In the imaging device, the solid-state imaging element is mounted on a curved base in a curved shape with an adhesive layer interposed therebetween.

[0003] According to the imaging device configured as described above, when an image of an object is formed on a light-receiving surface of a solid-state imaging element by an imaging lens, a deviation in a focal position on the center and the periphery of the light-receiving surface can be suppressed.

[0004] In the above-described method of mounting an imaging device, a solid-state imaging element is first placed on a curved base with an adhesive layer interposed therebetween. Air is released from the rear surface side of the curved base to allow the solid-state imaging element to be formed in a curved shape, and the curved shape of the solid-state imaging element is maintained by the adhesive layer.

[0005] Here, when the air is released, a protective tape covering the solid-state imaging element is attached to one side of the light-receiving surface of the solid-state imaging element. The protective tape prevents air leakage and is separated after the mounting.

[0006] BIBLIOGRAPHIC REFERENCES

[0007] PATENT LITERATURE

[0008] Patent Literature 1: Japanese Unexamined Patent Application Publication No. 2015-70159 SUMMARY

[0009] In an imaging device, a protective tape covering a light-receiving surface of a solid-state imaging element is used at the time of mounting. With the present disclosure, it is desirable to develop an imaging device in which the protective tape does not come into contact with the light-receiving surface of the solid-state imaging element and a method of manufacturing an imaging device.

[0010] An imaging device according to a first embodiment of the present disclosure includes a solid-state imaging element and a base. The solid-state imaging element includes a light-receiving surface on the base, on which a plurality of pixels are arranged in a two-dimensional array. The pixels each include a photoelectric conversion region that converts incident light into an electric signal. The base is provided with a curved surface that is recessed in an incident direction of the incident light. The base includes a curved accommodation portion that accommodates the solid-state imaging element. In the imaging device, the light-receiving surface and the curved surface are caused to face each other, and the solid-state imaging element is disposed on the curved accommodation portion in a curved state.

[0011] In the imaging device according to the second embodiment of the present disclosure, in the imaging device according to the first embodiment, a film is arranged between the solid-state imaging element and the curved housing.

[0012] The imaging device according to the third embodiment of the present disclosure includes a mounting substrate having a base to be mounted on the side of the back surface opposite the curved surface, and in the imaging device according to the first embodiment, the base includes an electric conductor, one end portion of which is electrically coupled to the solid-state imaging element in the curved housing, and the other end portion of which is electrically coupled to the mounting substrate.

[0013] The imaging device according to the fourth embodiment of the present disclosure further includes, in the imaging device according to the first embodiment, a wiring substrate between the solid-state imaging element and the curved housing of the base, the wiring substrate including a wiring layer and being formed in a curved shape along the curved surface of the curved housing.

[0014] A method of manufacturing an imaging device according to the fifth embodiment of the present disclosure includes: forming a solid-state imaging element including a light-receiving surface on a base, a plurality of pixels arranged in a two-dimensional array on the light-receiving surface, the pixels each including a photoelectric conversion region that converts incident light into an electric signal; forming a base provided with a curved surface that is recessed in an incident direction of the incident light, the base including a curved housing that accommodates the solid-state imaging element; causing the light-receiving surface and the curved surface to face each other; and forming the solid-state imaging element in a curved state on the curved housing, wherein a film is interposed between the solid-state imaging element and the curved housing. BRIEF DESCRIPTION OF DRAWINGS

[0015] FIG. 1A is a planar configuration diagram in the first step of the first manufacturing method (mounting method) of the imaging device according to the first embodiment of the present disclosure.

[0016] FIG. 1B is FIG. 1A is a cross-sectional configuration diagram in the first step shown in

[0017] FIG. 2A is a planar configuration diagram in the second step.

[0018] FIG. 2B is FIG. 2A is a cross-sectional configuration diagram in the second step shown in

[0019] FIG. 3A is a planar configuration diagram in the third step.

[0020] FIG. 3B is a cross-sectional configuration diagram in the third step shown in FIG. 3A

[0021] ​FIG. 4A is a plan view of the fourth step.

[0022] FIG. 4B is a cross-sectional view of the fourth step shown in FIG. 4A

[0023] FIG. 5 is a cross-sectional view of a modification of the third step.

[0024] FIG. 6 is a cross-sectional view of the fifth step.

[0025] FIG. 7 is a cross-sectional view of the sixth step.

[0026] FIG. 8 is a cross-sectional view of the seventh step.

[0027] FIG. 9 is a cross-sectional view of a modification of the fourth step.

[0028] FIG. 10 is a step view of a first modification of the first manufacturing method showing a case where a part of the solid-state imaging device extends to the outside from the curved accommodating portion of the base. FIG. 10 (A) of is a plan view of the base before mounting. FIG. 10 (B) of is a cross-sectional view of the seating before mounting.

[0029] FIG. 10 (C) of is a plan view of the solid-state imaging device before mounting. FIG. 10 (D) of is a plan view of the imaging device with the solid-state imaging device mounted on the curved accommodating portion of the base. FIG. 10 (E) of is a cross-sectional view of the imaging device taken along FIG. 10 (D) shown in the line E-E. FIG. 10 (F) of is a cross-sectional view of the imaging device taken along FIG. 10 (D) shown in the line F-F.

[0030] FIG. 10 is a step view of a second modification of the first manufacturing method showing a case where the solid-state imaging device is completely contained in the curved accommodating portion of the base. FIG. 11 (A) of is a plan view of the base before mounting. FIG. 11 (B) of is a cross-sectional view of the seating before mounting. FIG. 11 (C) of is a plan view of the solid-state imaging device before mounting. FIG. 11 (D) of is a plan view of the imaging device with the solid-state imaging device mounted on the curved accommodating portion of the base. FIG. 11 (E) of is a cross-sectional view of the imaging device taken along​FIG. 11 A cross-sectional configuration diagram of the imaging device taken along line E-E shown in (D) of FIG. 8.

[0031] FIG. 11 (F) of FIG. 8 is a planar configuration diagram of the imaging device taken along line F-F shown in (D) of FIG. 8. FIG. 11 A cross-sectional configuration diagram of the imaging device taken along line F-F shown in (D) of FIG. 8.

[0032] FIG. 11 is a step diagram showing a fourth modification of the first manufacturing method in which the solid-state imaging device is mounted on the curved accommodating portion of the base. FIG. 11 (A) of FIG. 9 is a planar configuration diagram of the base before mounting. FIG. 11 (B) of FIG. 9 is a cross-sectional configuration diagram of the base before mounting. FIG. 11 (C) of FIG. 9 is a cross-sectional configuration diagram of the imaging device in which the solid-state imaging device is mounted on the curved accommodating portion of the base by utilizing a pressure difference due to pressure reduction. FIG. 11 (D) of FIG. 9 is a cross-sectional configuration diagram of the imaging device in which the solid-state imaging device is mounted on the curved accommodating portion of the base by utilizing a pressure difference due to pressure increase.

[0033] FIG. 12 is a diagram describing a first configuration according to a modification of the base. FIG. 12 (A) of FIG. 10 is a planar configuration diagram of the base before mounting. FIG. 12 (B) of FIG. 10 is a cross-sectional configuration diagram of the base before mounting.

[0034] FIG. 12 is a step diagram showing a fourth modification of the first manufacturing method in which the solid-state imaging device is mounted on the curved accommodating portion of the base. FIG. 12 (A) of FIG. 11 is a planar configuration diagram of the base before mounting. FIG. 13 (B) of FIG. 11 is a cross-sectional configuration diagram of the base before mounting. FIG. 13 (C) of FIG. 11 is a cross-sectional configuration diagram when the solid-state imaging device is placed on the curved accommodating portion of the base. FIG. 14 (D) of FIG. 11 is a cross-sectional configuration diagram of the imaging device in which the solid-state imaging device is mounted on the curved accommodating portion of the base.

[0035] FIG. 14 is a planar configuration diagram of the base describing a change in the position at which the bag portion is arranged.

[0036] FIG. 14 is a cross-sectional configuration diagram of the base shown in (D) of FIG. 12. FIG. 14

[0037] FIG. 14 is a planar configuration diagram of the base describing a change in the position at which the bag portion is arranged.

[0038] FIG. 14 is​FIG. 14 A cross-sectional configuration diagram of the base shown in (A) is shown in (B).

[0039] FIG. 14 is a planar configuration diagram of the base that describes a change in the position at which the pocket is arranged.

[0040] FIG. 15A is FIG. 15B A cross-sectional configuration diagram of the base shown in (A) is shown in (B).

[0041] FIG. 15A is a diagram that describes a second configuration according to a modification example of the base. FIG. 15C (A) of is a cross-sectional configuration diagram of the base and the solid-state imaging element before mounting. FIG. 15D (B) of is an enlarged cross-sectional configuration diagram of a main portion of the base and the solid-state imaging element.

[0042] FIG. 15C is a planar configuration diagram that describes a third configuration according to a modification example of the base.

[0043] FIG. 15E is a cross-sectional configuration diagram of an imaging device according to a second embodiment of the present disclosure.

[0044] FIG. 15F is a cross-sectional configuration diagram of an imaging device according to a modification example of the second embodiment.

[0045] FIG. 15E is a cross-sectional view that describes a first step of a first manufacturing method of the imaging device according to the second embodiment.

[0046] FIG. 16 is a cross-sectional view of a second step.

[0047] FIG. 16 is a cross-sectional view of a third step.

[0048] FIG. 16 is a cross-sectional view of a fourth step.

[0049] FIG. 17 is a cross-sectional view of a fifth step.

[0050] FIG. 18 is a cross-sectional view of a sixth step.

[0051] FIG. 19 is a cross-sectional view of a seventh step.

[0052] FIG. 20A is a cross-sectional view of an eighth step.

[0053] FIG. 20B is a cross-sectional view that describes a first step of a second manufacturing method of the imaging device according to the second embodiment.

[0054] FIG. 20C This is a cross-sectional view of the second step.

[0055] FIG. 20D This is a cross-sectional view of the third step.

[0056] FIG. 20E This is a cross-sectional view of the fourth step.

[0057] FIG. 20F This is a cross-sectional view of the fifth step.

[0058] FIG. 20G This is a cross-sectional view of step six.

[0059] FIG. 20H This is a cross-sectional view of step seven.

[0060] FIG. 21A This is a cross-sectional configuration diagram of an imaging apparatus according to a third embodiment of the present disclosure.

[0061] FIG. 21B This is a cross-sectional configuration diagram of an imaging device according to a modified example of the third embodiment.

[0062] FIG. 21C This is a plan view illustrating the base in the first step of the first manufacturing method of the imaging device according to the third embodiment.

[0063] FIG. 21D yes FIG. 21E The diagram shows the cross-sectional configuration of the base.

[0064] FIG. 21F This is a plan view of the base in the second step.

[0065] FIG. 21G yes FIG. 22 The diagram shows the cross-sectional configuration of the base.

[0066] FIG. 23 This is a planar configuration diagram of the solid-state imaging element and the base in the third step.

[0067] FIG. 24A yes FIG. 24B The diagram shows a cross-sectional configuration of the solid-state imaging element and the base.

[0068] FIG. 24A This is a planar configuration diagram of the solid-state imaging element and the base in the fourth step.

[0069] FIG. 25A yes FIG. 25B The diagram shows a cross-sectional configuration of the solid-state imaging element and the base.

[0070] FIG. 25A This is a cross-sectional configuration diagram of the solid-state imaging element and the base in a variation of the fourth step.

[0071] FIG. 26A This is a cross-sectional configuration diagram of the solid-state imaging element and the base in the fifth step.

[0072] FIG. 26B This is a cross-sectional configuration diagram of the solid-state imaging element and the base in step six.

[0073] FIG. 26A This is a cross-sectional configuration diagram of the solid-state imaging element, base, and mounting substrate in step seven.

[0074] FIG. 27A This is a cross-sectional configuration diagram of the solid-state imaging element, base, and mounting substrate in step eight.

[0075] FIG. 27B This is a plan view of the base in the first step of the second manufacturing method of the imaging device according to the third embodiment.

[0076] FIG. 27A yes FIG. 28 The diagram shows the cross-sectional configuration of the base.

[0077] FIG. 29 This is a plan view of the base in the second step.

[0078] FIG. 30 yes FIG. 31 The diagram shows the cross-sectional configuration of the base.

[0079] FIG. 32 This is a planar configuration diagram of the solid-state imaging element and the base in the third step.

[0080] FIG. 33A yes FIG. 33B The diagram shows a cross-sectional configuration of the solid-state imaging element and the base.

[0081] FIG. 33A This is a planar configuration diagram of the solid-state imaging element and the base in the fourth step.

[0082] FIG. 34A yes FIG. 34B The diagram shows a cross-sectional configuration of the solid-state imaging element and the base.

[0083] FIG. 34A This is a cross-sectional configuration diagram of the solid-state imaging element and the base in a variation of the fourth step.

[0084] FIG. 35A This is a cross-sectional configuration diagram of the solid-state imaging element and the base in the fifth step.

[0085] FIG. 35B This is a cross-sectional configuration diagram of the solid-state imaging element, base, and mounting substrate in step six.

[0086] FIG. 35A This is a cross-sectional configuration diagram of the solid-state imaging element, base, and mounting substrate in step seven.

[0087] FIG. 36A This is a plan view of the base in the first step of the third manufacturing method of the imaging device according to the third embodiment.

[0088] FIG. 36B yes FIG. 36A The diagram shows the cross-sectional configuration of the seat.

[0089] FIG. 37 This is a planar configuration diagram of the solid-state imaging element and the base in the second step.

[0090] FIG. 38 yes FIG. 39 The diagram shows a cross-sectional configuration of the solid-state imaging element and the base.

[0091] FIG. 40 This is a planar configuration diagram of the solid-state imaging element and the base in the third step.

[0092] FIG. 41A yes FIG. 41B The diagram shows a cross-sectional configuration of the solid-state imaging element and its base.

[0093] FIG. 41A This is a planar configuration diagram of the solid-state imaging element and the base in the fourth step.

[0094] FIG. 42A Is FIG. 42B The diagram shows a cross-sectional configuration of the solid-state imaging element and the base.

[0095] FIG. 42A This is a cross-sectional configuration diagram of the solid-state imaging element and the base in a variation of the fourth step.

[0096] FIG. 43A This is a cross-sectional configuration diagram of the solid-state imaging element and the base in the fifth step.

[0097] FIG. 43B This is a cross-sectional configuration diagram of the solid-state imaging element, base, and mounting substrate in step six.

[0098] FIG. 43A This is a cross-sectional configuration diagram of the solid-state imaging element, base, and mounting substrate in step seven.

[0099] FIG. 44A This is a cross-sectional configuration diagram of the imaging device in step eight.

[0100] FIG. 44B This is a plan view of the base in the first step of the fourth manufacturing method of the imaging device according to the third embodiment.

[0101] FIG. 44A Is FIG. 45 The diagram shows the cross-sectional configuration of the base.

[0102] FIG. 46 This is a plan view of the membrane and base in the second step.

[0103] FIG. 47 yes FIG. 48 The diagram shows a cross-sectional configuration of the film and the base.

[0104] FIG. 49 This is a planar configuration diagram of the membrane, solid-state imaging element, and substrate in the third step.

[0105] FIG. 50A yes FIG. 50B The diagram shows a cross-sectional configuration of the membrane, solid-state imaging element, and base.

[0106] FIG. 50A This is a planar configuration diagram of the membrane, solid-state imaging element, and its placement in the fourth step.

[0107] FIG. 51A Is FIG. 51B The diagram shows a cross-sectional configuration of the membrane, solid-state imaging element, and base.

[0108] FIG. 51A This is a cross-sectional configuration diagram of the membrane, solid-state imaging element, and base in a variation of the fourth step.

[0109] FIG. 52A This is a cross-sectional configuration diagram of the membrane, solid-state imaging element, base, and mounting substrate in the fifth step.

[0110] FIG. 52B This is a cross-sectional configuration diagram of the membrane, solid-state imaging element, base, and mounting substrate in step six.

[0111] FIG. 52A This is a cross-sectional configuration diagram of the imaging device in step seven.

[0112] FIG. 53A This is a plan view illustrating the first configuration of the base of the imaging device according to the third embodiment.

[0113] FIG. 53B yes FIG. 53A The diagram shows the cross-sectional configuration of the base.

[0114] FIG. 54 This is a plan view illustrating the second configuration of the mounting section of the imaging apparatus according to the third embodiment.

[0115] FIG. 55 yes FIG. 56The diagram shows the cross-sectional configuration of the base.

[0116] FIG. 57 This is a step diagram illustrating a manufacturing method in which a solid-state imaging element is mounted on a curved receiving portion of a base. FIG. 58A (A) is a plan view describing the third configuration of the base before installation. FIG. 58B (B) is a cross-sectional configuration diagram of the base before installation. FIG. 58A (C) is a cross-sectional configuration diagram when the solid-state imaging element is placed on the curved housing of the base. FIG. 59A (D) is a cross-sectional configuration diagram of an imaging device in which the solid-state imaging element is mounted on a curved receiving portion of the base.

[0117] FIG. 59B This is a diagram illustrating the fourth configuration of the base. FIG. 59A (A) is a cross-sectional configuration diagram of the base and solid-state imaging element before installation. FIG. 60 (B) is an enlarged cross-sectional view of the main parts of the base and solid-state imaging element.

[0118] FIG. 60 This is a plan view depicting the fifth configuration of the base.

[0119] FIG. 60 This is a cross-sectional view describing the solid-state imaging element in the first coupled configuration of the imaging device.

[0120] FIG. 60 This is a plan view of the base, describing the first coupling configuration.

[0121] FIG. 60 This is a cross-sectional view of the base describing the first coupling configuration.

[0122] FIG. 61 This is a cross-sectional view of the mounting substrate describing the first coupling configuration.

[0123] FIG. 61 This is a cross-sectional view describing the solid-state imaging element in the second coupled configuration of the imaging device.

[0124] FIG. 61 This is a plan view of the base describing the second coupling configuration.

[0125] FIG. 62 This is a cross-sectional configuration diagram of the base of the second connection structure.

[0126] FIG. 63A This is a cross-sectional view describing the solid-state imaging element in the third coupling configuration of the imaging device.

[0127] FIG. 63B This is a plan view of the base, describing the third coupling configuration.

[0128] FIG. 63C This is a cross-sectional view of the base describing the third coupling configuration.

[0129] FIG. 63D This is a cross-sectional view of the mounting substrate describing the third coupling configuration.

[0130] FIG. 64A This is a cross-sectional view describing the fourth coupling configuration of the solid-state imaging element in the imaging device.

[0131] FIG. 64B This is a plan view of the base describing the fourth coupling configuration.

[0132] FIG. 64C This is a cross-sectional view of the base describing the fourth coupling configuration.

[0133] FIG. 65A This is a cross-sectional view describing the fifth coupling configuration of the solid-state imaging element of the imaging device.

[0134] FIG. 65B This is a plan view of the base describing the fifth coupling configuration.

[0135] FIG. 65C This is a cross-sectional view of the base describing the fifth coupling configuration.

[0136] FIG. 65D This is a cross-sectional view of the mounting substrate describing the fifth coupling configuration.

[0137] FIG. 66A This is a cross-sectional view of the solid-state imaging element in the sixth coupling configuration of the imaging device.

[0138] FIG. 66B This is a plan view of the base describing the sixth coupling configuration.

[0139] FIG. 66C This is a cross-sectional view of the base describing the sixth coupling configuration.

[0140] FIG. 67A This is a cross-sectional configuration diagram of an imaging apparatus according to the fourth embodiment of the present disclosure.

[0141] FIG. 67B This is a cross-sectional configuration diagram of an imaging device according to a modified example of the fourth embodiment.

[0142] FIG. 67C This is a cross-sectional configuration diagram of an imaging apparatus according to the fifth embodiment of this disclosure.

[0143] FIG. 67D This is a cross-sectional configuration diagram of an imaging device according to a modified example of the fifth embodiment. Detailed Implementation

[0144] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. It should be noted that the description is given in the following order.

[0145] 1. First Implementation Method

[0146] The first embodiment describes an example of the application of this technology to an imaging device and a method for manufacturing the imaging device. The first embodiment describes a specific configuration of the imaging device and a specific method for manufacturing the imaging device.

[0147] 2. Second Implementation Method

[0148] The second embodiment describes an imaging apparatus including a component section and an optical section, as well as a method for manufacturing the imaging apparatus. Furthermore, the second embodiment describes an imaging apparatus having a wiring substrate provided in the component section, and a method for manufacturing the imaging apparatus.

[0149] 3. Third Implementation Method

[0150] The third embodiment describes an imaging apparatus and a method for manufacturing an imaging apparatus that further include a mounting substrate on which a base is mounted, in accordance with the imaging apparatus and method of manufacturing an imaging apparatus according to the second embodiment.

[0151] 4. Fourth Implementation Method

[0152] The fourth embodiment describes an imaging apparatus and a method for manufacturing an imaging apparatus that also includes an intermediate wiring substrate in the imaging apparatus and manufacturing method of the imaging apparatus according to the third embodiment.

[0153] 5. Fifth Implementation Method

[0154] The fifth embodiment describes an imaging device and a method for manufacturing an imaging device that further include a logic chip in the imaging device and the method for manufacturing an imaging device according to the third embodiment.

[0155] 6. Other implementation methods

[0156] <1. First Implementation Method>

[0157] Refer to Figure 1 to FIG. 68A The present disclosure describes an imaging apparatus 1 according to a first embodiment and a method for manufacturing the imaging apparatus 1.

[0158] Here, for convenience, the arrow-X direction appropriately indicated in the accompanying drawings indicates a planar direction of the imaging device 1 placed on a plane. The arrow-Y direction indicates another planar direction orthogonal to the arrow-X direction. Furthermore, the arrow-Z direction indicates an upward direction orthogonal to both the arrow-X and arrow-Y directions. That is, the arrow-X, arrow-Y, and arrow-Z directions are precisely aligned with the X-axis, Y-axis, and Z-axis directions of the three-dimensional coordinate system, respectively.

[0159] It should be noted that these directions are each indicated to aid in understanding the description and are not intended to limit the directions used in this technique.

[0160] Furthermore, in the first embodiment and other embodiments described later, the same or substantially the same reference numerals are used to denote the same components, and redundant descriptions are omitted.

[0161] [Configuration of Imaging Device 1 and First Manufacturing Method of Imaging Device 1]

[0162] The first manufacturing method (installation method) of the imaging device 1 according to the first embodiment is as follows.

[0163] Here, FIG. 68B The planar configuration is shown in the first step of the method for manufacturing the imaging device 1. FIG. 68C It shows FIG. 69 An example of the cross-section configuration in the first step shown. FIG. 70 An example of the planar configuration in the second step is shown. FIG. 71 Show FIG. 72 An example of the cross-section configuration in the second step is shown. FIG. 17 An example of the planar configuration in the third step is shown. FIG. 1A It shows FIG. 1B An example of the cross-section configuration in the third step shown. FIG. 1A An example of the planar configuration in step four is shown. FIG. 2A It shows FIG. 2B An example of the cross-section configuration in the fourth step shown. FIG. 2A An example of the cross-sectional configuration according to the variation of the third step is shown. FIG. 3A An example of the cross-section configuration in step five is shown. FIG. 3B An example of the section configuration in step six is ​​shown. FIG. 3A An example of the section configuration in step seven is shown. FIG. 4A An example of the cross-sectional configuration according to the variation of step four is shown.

[0164] The imaging device 1 according to the first embodiment includes a solid-state imaging element 2 and a base 5 (see...). FIG. 4B ).

[0165] The solid-state imaging element 2 includes a light-receiving surface 2A on a substrate, on which a plurality of pixels are arranged in a two-dimensional array, each pixel including a photoelectric conversion region. The photoelectric conversion region converts incident light L into an electrical signal. The substrate is configured, for example, by stacking a single-crystal silicon substrate and wiring layers, although detailed description is omitted.

[0166] The base 5 is provided with a curved surface 50C that is recessed in the incident direction of the incident light, and includes a curved receiving portion 50 for accommodating the solid-state imaging element 2.

[0167] In the imaging device 1, the rear surface 2B of the base opposite to the light receiving surface 2A faces the curved surface 50C, and the solid-state imaging element 2 is configured in a curved state on the curved receiving portion 50.

[0168] First, such as FIG. 4A and 1B As shown, a base 5 is prepared. The base 5 includes a curved receiving portion 50 located in the middle portion of the front surface 50A. The curved receiving portion 50 is recessed from the front surface 50A in the incident direction of the incident light L, and is formed into a curved shape in the side view. The curved receiving portion 50 of the base 5 can be formed into a curved surface shape in which the normal of the curved surface 50C coincides with the principal beam axis angle (CRA: principal ray angle) of the module lens.

[0169] The base 5 includes a ventilation section 53 in the bending housing 50, extending from the bending surface 50C to a rear surface 50B opposite to the bending surface 50C. When the solid-state imaging element 2 is bent by a pressure difference between gases (such as air), the ventilation section 53 allows air to pass through the solid-state imaging element 2, the membrane 3 (see...) FIG. 5 and FIG. 6 The gas is discharged to the outside of the base 5 through the enclosed space of the curved receiving part 50 of the base 5.

[0170] Ventilation section 53 is formed by through holes. Embedded member 54, such as a porous material as described later (see [link]). FIG. 7 (A) and (B) can be embedded in the ventilation section 53.

[0171] like FIG. 8 and FIG. 9 As shown, membrane 3 is attached to the front surface 50A to cover the curved receiving portion 50 of the base 5. Membrane 3 is attached to seal the curved receiving portion 50.

[0172] The membrane 3 is formed of, for example, an organic material and is softer than the solid-state imaging element 2. Furthermore, an adhesive is applied to the front and rear surfaces of the membrane 3. For example, a resin adhesive is used as the adhesive.

[0173] Here, as an adhesive, for example, one or more resin adhesives selected from epoxy resins, acrylic resins, and blue-green resins are used. As an adhesive, ultraviolet (UV) curing type, temperature curing type, time curing type, etc., can be used, and there are no particular limitations on the curing type.

[0174] When a UV-curable adhesive is used, the base 5 is formed of a UV-transmitting material.

[0175] like FIG. 8 and FIG. 1A As shown, the solid-state imaging element 2 is attached to the base 5 at a position corresponding to the curved receiving portion 50, with the membrane 3 situated therebetween. Adhesive is pre-applied to the membrane 3, thus the solid-state imaging element 2 adheres to the surface of the membrane 3.

[0176] Here, when a deviation occurs at the mounting position of the solid-state imaging element 2 relative to the curved receiving portion 50 of the base 5, a deviation occurs on the optical axis between the solid-state imaging element 2 and the module lens, resulting in image quality degradation.

[0177] Therefore, the membrane 3 or the base 5 is provided with a positioning mark 57 (or a mark, see below) for positioning. FIG. 3A Furthermore, an optical alignment mechanism and a finely adjustable pickup arm are used to position the solid-state imaging element 2 at a precise location.

[0178] In addition, the stepped portion 56, which serves as a guide for positioning the solid-state imaging element 2 (see...) FIG. 3B It can be formed on the curved surface 50C of the curved receiving portion 50 of the base 5.

[0179] In addition, such as FIG. 13 As shown, a chuck 620 can be fabricated, and the chuck 620 can be used to press the film 3 against the front surface 50A of the base 5. In this case, positioning misalignment caused by insufficient adhesion of the adhesive on the film 3 can be effectively suppressed or prevented.

[0180] like FIG. 2A and FIG. 2B As shown, the gas inside the curved receiving portion 50 is released from the ventilation section 53 of the base 5, and the interior of the curved receiving portion 50 has a negative pressure. This causes the membrane 3 and the solid-state imaging element 2 to be attracted to the curved surface 50C of the curved receiving portion 50, and the membrane 3 and the solid-state imaging element 2 are formed in a curved shape along the shape of the curved surface 50C in the curved receiving portion 50. That is, the membrane 3 and the solid-state imaging element 2 are formed in a curved shape that is concave in the incident direction of the incident light L (opposite to the direction of arrow-Z).

[0181] When the adhesive cures, the solid-state imaging element 2, which is formed into a curved shape, is then fixed to the curved receiving portion 50 of the base 5, with the film 3 between them, because the adhesive forms on the rear surface of the film 3. In other words, the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5.

[0182] like FIG. 3A As shown, the embedded member 54 is embedded in the ventilation section 53 of the base 5. When the ventilation section 53 is blocked by the embedded member 54, the phenomenon in which long-wavelength incident light L passes through the thinned solid-state imaging element 2 and is reflected by the base 5 so that the shape of the curved receiving section 50 is reflected therein can be effectively suppressed or prevented.

[0183] Furthermore, the blockage of the ventilation section 53 effectively suppresses or prevents the loss of stress balance of the base of the solid-state imaging element 2 mounted on the curved receiving section 50 of the base 5 near the ventilation section 53. Therefore, in the solid-state imaging element 2, the degradation of dark current and white spots can be effectively suppressed or prevented.

[0184] Furthermore, when the embedded member 54 is formed of a material with high thermal conductivity, the heat dissipation effect can be improved.

[0185] From this perspective, as the embedded component 54, one or more materials are selected from those having a reflectivity close to that of the base 5, materials capable of filling the entire area of ​​the ventilation section 53 without creating gaps, and materials with high thermal conductivity.

[0186] For example, a mask is used to selectively attach the embedded component 54 to the ventilation section 53. At this time, a high-melting-point material containing tin (Sn), silver (Ag), copper (Cu), lead (Pb), etc., can be used as the embedded component 54.

[0187] Furthermore, the embedded member 54 may be pre-formed on the wiring substrate 7 described later (see FIG. 3B In this technology, for example, a flexible printed circuit (FPC) substrate is used as the wiring substrate. The wiring substrate 7 is arranged between the base 5 and the solid-state imaging element 2. Therefore, the embedding member 54 is pre-embedded in the wiring substrate 7 at a position corresponding to the ventilation portion 53. As the embedding member 54, Cu, such as Cu formed on the wiring of the wiring substrate 7, can actually be used. For example, Cu is formed by electroplating.

[0188] In addition, conductive resins used for underfill materials, etc., can be used as embedded members 54.

[0189] like FIG. 17 As shown, the base 5 is fixed to the package 8.

[0190] Subsequently, asFIG. 16 The wiring 9 is shown. One end of the wiring 9 is electrically coupled to a terminal (bonding pad) of a solid-state imaging element 2 (not shown), and the other end is electrically coupled to a terminal of a package 8 (not shown). For example, gold (Au) wire is used as the wire 9. Alternatively, the wiring 9 can be connected using an ultrasonic vibration method or a thermoforming method.

[0191] When this series of steps is completed, the imaging device 1, in which the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5, is completed.

[0192] It should be noted that this disclosure is not limited to the first manufacturing method of the imaging device 1 described above.

[0193] For example, adhesive can be applied to the solid-state imaging element 2 instead of the membrane 3.

[0194] Furthermore, as membrane 3, a chip attachment film (DAF) can be used. In this case, membrane 3 can be used to form the solid-state imaging element 2 by cutting a semiconductor wafer, and the membrane 3 used can be used to attach the solid-state imaging element 2 to the base 5 by cutting.

[0195] In addition, adhesive can be applied to the curved surface 50C of the curved receiving portion 50 of the base 5. In this case, no adhesive is applied to one side of the rear surface of the membrane 3.

[0196] Furthermore, in the first manufacturing method of the imaging device 1, the membrane 3 is first attached to the base 5; however, the solid-state imaging element 2 can be first attached to the membrane 3, and then the membrane 3 and the solid-state imaging element 2 can be placed on the base 5.

[0197] In addition, such as FIG. 5 As shown, in the first manufacturing method of the imaging device 1 described above, for example, a gas such as air can be blown from the nozzle 610 to release the gas in the sealed space between the membrane 3 and the curved receiving portion 50 from the vent 53 while pressurizing the membrane 3 and the solid-state imaging element 2 as a whole. The blowing of gas allows the solid-state imaging element 2 and the membrane 3 to be easily shaped into a curved shape along the curved surface 50C of the curved receiving portion 50 of the base 5.

[0198] [Work and Results]

[0199] The imaging device 1 according to the first embodiment includes a solid-state imaging element 2 and a base 5, such as FIG. 4A and FIG. 4B as well as FIG. 6 As shown.

[0200] The solid-state imaging element 2 includes a light-receiving surface 2A on a base. Multiple pixels are arranged in a two-dimensional array on the light-receiving surface 2A, and each pixel includes a photoelectric conversion region. The photoelectric conversion region converts incident light L into an electrical signal. The base 5 is provided with a curved surface 50C recessed in the incident direction of the incident light L, and includes a curved receiving portion for accommodating the solid-state imaging element. Then, the rear surface of the base, opposite to the light-receiving surface 2A, faces the curved surface 50C, and the solid-state imaging element 2 is positioned in a curved state on the curved receiving portion 50C.

[0201] As will be described in detail, the membrane 3 is disposed between the solid-state imaging element 2 and the curved receiving portion 50 of the base 5. The membrane 3 is softer than the solid-state imaging element 2. Adhesive is formed on the surface of the membrane 3 on the solid-state imaging element 2 side and on the surface of its curved surface 50C side.

[0202] According to the imaging device 1 configured as described above, the film 3 is not disposed on the light-receiving surface 2A of the solid-state imaging element 2, and therefore the light-receiving surface 2A of the solid-state imaging element 2 and the film 3 do not contact each other. For example, damage to the light-receiving surface 2A of the solid-state imaging element 2 can be effectively suppressed or prevented.

[0203] Furthermore, in the first manufacturing method of the imaging device 1, a solid-state imaging element 2 is first formed, which includes a light-receiving surface 2A on a base. On the light-receiving surface 2A, a plurality of pixels are arranged in a two-dimensional array, and each pixel includes a photoelectric conversion region. The photoelectric conversion region converts incident light L into an electrical signal. Next, a curved surface 50C recessed in the incident direction of the incident light L is provided, and a base 5 including a curved receiving portion 50 for accommodating the solid-state imaging element 2 is formed. Then, the rear surface of the base opposite to the light-receiving surface 2A is allowed to face the curved surface 50C, and the solid-state imaging element 2 is formed in a curved state on the curved receiving portion 50, wherein a film 3 is located between the solid-state imaging element 2 and the curved receiving portion 50.

[0204] According to the first manufacturing method of the imaging device 1 configured as described above, the solid-state imaging element 2 with a curved shape can be mounted on the base 5 without the light receiving surface 2A and the film 3 of the solid-state imaging element 2 coming into contact with each other.

[0205] [Modified configuration of imaging device 1 and first manufacturing method of imaging device 1]

[0206] As mentioned above FIG. 17 As shown, the imaging device 1 includes a base 5 containing a bending receiving portion 50. The bending surface 50C of the bending receiving portion 50 is formed along the image forming surface of the module lens (not shown).

[0207] The imaging device 1 configured as described above can reduce the corresponding load of image plane distortion when designing modular lenses. Furthermore, it can reduce the number of lenses in the modular lenses, reduce the height of the modular lenses, and achieve higher resolution for the modular lenses.

[0208] Furthermore, the curved receiving portion 50 of the base 5 can be formed into a curved surface shape in which the normal of the curved surface 50C is consistent with the CRA of the module lens.

[0209] Furthermore, based on the base 5 with this shape, even at high image heights, the main beam is incident vertically onto the solid-state imaging element 2, thereby effectively suppressing sensitivity loss caused by vignetting in the pixels of the solid-state imaging element 2 and image quality degradation (such as tilted light mixing).

[0210] Furthermore, on one side of the light-receiving surface 2A of the solid-state imaging element 2, which is fixed in a curved shape to the curved receiving portion 50 of the base 5, the imaging device 1 may be provided with an infrared absorption filter formed in the same curved shape. This eliminates the dependence of optical path difference in the infrared absorption filter on image height, effectively suppressing or preventing chromatic aberration.

[0211] In the imaging apparatus 1, the solid-state imaging element 2 needs to be fixed to the bending receiving portion 50 of the base 5 without causing cracks. According to physical principles, the thinner Si substrate forming the base of the solid-state imaging element 2 is more easily bent. However, when the solid-state imaging element 2 is handled as a sample, the possibility of breakage is high.

[0212] Therefore, in practice, the thickness of the Si substrate is set to be in the range of 10 μm to 50 μm. Furthermore, the thickness of the Si substrate is preferably in the range of 15 μm to 35 μm.

[0213] (1) First variation of the first manufacturing method

[0214] FIG. 7 A first variation of the first manufacturing method of the imaging device 1 is shown, in which a portion of the solid-state imaging element 2 extends from the curved receiving portion 50 to the outside. FIG. 8 (A) shows an example of the planar configuration of the base 5 before installation. FIG. 9 (B) shows an example of the cross-sectional configuration of the base 5 before installation. FIG. 4A (C) shows an example of a planar configuration of the solid-state imaging element 2 before installation. FIG. 4B (D) shows an example of a planar configuration of an imaging device 1 in which the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5. FIG. 8 (E) shows along FIG. 8Example of the cross-sectional configuration of imaging device 1 cut by line EE shown in (D). FIG. 10 (F) shows along FIG. 10 Example of the cross-sectional configuration of the imaging device 1 shown in (D) is a line FF cut-off.

[0215] First, such as FIG. 10 As shown in (A) and (B), a base 5 is formed. The base 5 includes a curved receiving portion 50.

[0216] At the same time, such as FIG. 10 As shown in (C), a solid-state imaging element 2 is formed.

[0217] Next, as FIG. 10 As shown in (D) to (F), the solid-state imaging element 2 is mounted in a curved shape on the curved receiving portion 50 of the base 5.

[0218] At this point, as viewed in the direction of arrow-Z (hereinafter referred to as "in the plan view") and arrow-Y (hereinafter referred to as "in the side view"), a portion of the peripheral edge of the solid-state imaging element 2 extending from the curved receiving portion 50 to the outside bends along the front surface 50A of the base 5. Stress concentration occurs in the solid-state imaging element 2 at the boundary edge 52 between the curved receiving portion 50 and the front surface 50A.

[0219] The semiconductor substrate of the solid-state imaging element 2 is thinned to have a thickness of 30 μm or less, and the mounting condition is verified. As a result, cracks appear in the solid-state imaging element 2 in an area with a radius of curvature of 100 mm or less in the curved housing portion 50, resulting in a defect in the imaging device 1.

[0220] (2) A second variation of the first manufacturing method

[0221] FIG. 10 A second variation of the first manufacturing method is shown in the case where the solid-state imaging element 2 is completely contained in the curved receiving portion 50. FIG. 10 (A) shows an example of the planar configuration of the base 5 before installation. FIG. 10 (B) shows an example of the cross-sectional configuration of the base 5 before installation. FIG. 10 (C) shows an example of a planar configuration of the solid-state imaging element 2 before installation. FIG. 10 (D) shows an example of a planar configuration of an imaging device 1 in which the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5. FIG. 10 (E) shows along FIG. 10 Example of the cross-sectional configuration of imaging device 1 cut by line EE shown in (D). FIG. 11 (F) shows along FIG. 11Example of the cross-sectional configuration of the imaging device 1 shown in (D) is a line FF cut-off.

[0222] First, such as FIG. 11 As shown in (A) and (B), a base 5 is formed. The base 5 includes a curved receiving portion 50.

[0223] At the same time, such as FIG. 11 As shown in (C), a solid-state imaging element 2 is formed. The solid-state imaging element 2 is sized to allow it to be accommodated in the curved receiving portion 50.

[0224] Next, as FIG. 11 As shown in (D) to (F), the solid-state imaging element 2 is mounted in a curved shape on the curved receiving portion 50 of the base 5.

[0225] At this point, in the plan view and side view, the solid-state imaging element 2 is contained in the curved receiving portion 50, and the solid-state imaging element 2 is completely formed into a curved shape along the curved shape of the curved receiving portion 50. In other words, the peripheral edge of the solid-state imaging element 2 does not reach the boundary edge 52 and is not curved.

[0226] According to the imaging device 1 formed as described above, even when the Si substrate is thinned to have a thickness of 30 μm or less and when the radius of curvature of the bending accommodating portion 50 reaches a region of 15 mm or less, no cracks will appear in the Si substrate of the solid-state imaging element 2. This allows for the acquisition of a defect-free imaging device 1.

[0227] (3) Material of base 5

[0228] The base 5 for bending installation is made of a material that takes into account the heat load during installation and the thermal changes in the market environment. In other words, the base 5 is made of a material that allows the coefficients of thermal expansion to be aligned as closely as possible without causing stress due to temperature changes on the solid-state imaging element 2.

[0229] For example, when a Si substrate is used for the solid-state imaging element 2, the base 5 is formed of Si. Si is optimal because it minimizes thermal stress. Without using Si, a substrate with a density close to 4.15 × 10⁻⁶ can be used. －6 The base 5 is formed from a material with a thermal expansion coefficient of Si of / ℃.

[0230] Furthermore, when selecting the material for base 5, factors such as ease of processing, material cost, processing cost, base weight, rigidity, and base thinning were considered. Specific examples of materials that can be used for base 5 include inorganic insulators, semiconductor materials, metallic materials, resin materials, and ceramic materials.

[0231] Semiconductor materials include carbon (C), silicon carbide (SiC), etc.

[0232] One or more metals selected from aluminum (Al), copper (Cu), brass, and titanium (Ti), or alloys containing one or more metals, can be used as the metallic material. Metallic materials have excellent heat dissipation properties.

[0233] Resin materials include acrylic, polystyrene, polycarbonate, and polypropylene. Resin materials are excellent in terms of cost reduction and weight reduction.

[0234] Ceramic materials include alumina (Al2O3), etc. While ceramic materials are expensive, they excel in durability and heat dissipation.

[0235] (4) Overall configuration of the bending accommodating part 50

[0236] In the base 5, the structure of the front surface of the bending receiving portion 50 is important. For example, the presence of protrusions on the bending surface of the bending receiving portion 50 causes stress to concentrate on the solid-state imaging element 2 with the protrusions as the origin, which makes the solid-state imaging element 2 prone to damage.

[0237] Even if the solid-state imaging element 2 is not damaged, the curved shape of the solid-state imaging element 2 is deformed due to the protrusion, and the amount of deformation deviates on the image forming surface of the module lens, resulting in resolution degradation.

[0238] Therefore, the front surface of the curved receiving portion 50 is formed as a smooth front surface without protrusions.

[0239] The smooth front surface can be formed using polishing, grinding, polishing and grinding, wheel machining, electrochemical polishing, etc. The front surface of the area of ​​the curved receiving portion 50 that contacts the solid-state imaging element 2 has a maximum roughness / height of at least 1 μm or less. Preferably, the maximum roughness / height is 0.5 μm or less; more preferably, the maximum roughness / height is 0.1 μm or less.

[0240] Here, the maximum height / roughness is based on the definition specified in the Japanese Industrial Standard or JIS B0601:2013.

[0241] (5) A third variation of the first manufacturing method

[0242] FIG. 11 A third variation of the first manufacturing method is shown, wherein the solid-state imaging element 2 is mounted on the bending receiving portion 50. FIG. 11 (A) shows an example of the planar configuration of the base 5 before installation. FIG. 11 (B) shows an example of the cross-sectional configuration of the base 5 before installation. FIG. 11(C) shows an example of a cross-sectional configuration in which the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5 by utilizing the pressure difference caused by decompression. FIG. 11 (D) shows an example of a cross-sectional configuration of an imaging device 1 in which the solid-state imaging element 2 is mounted on a curved receiving portion 50 of a base 5 by utilizing the pressure difference caused by pressurization.

[0243] First, such as FIG. 11 As shown in (A) and (B), a base 5 is formed. The base 5 includes a curved receiving portion 50. A ventilation portion 53 is formed in the middle portion near the center of the front surface 50A of the base 5, in other words, in the middle portion of the curved receiving portion 50. The ventilation portion 53 is formed as a through hole penetrating from the front surface 50A to the rear surface 50B opposite to the front surface 50A.

[0244] At the same time, such as FIG. 11 As shown in (C), a solid-state imaging element 2 is formed.

[0245] The solid-state imaging element 2 is placed on the curved receiving portion 50 of the base 5 (see...). FIG. 11 (C)). Here, the vacuum device 600 is connected to the ventilation section 53 formed in the curved receiving portion 50 of the base 5.

[0246] As described above, membrane 3 (not shown) FIG. 12 and FIG. 12 The membrane 3, solid-state imaging element 2, and curved housing 50 are positioned between them. Gas is released from the interior of the cavity enclosed by the membrane 3, solid-state imaging element 2, and curved housing 50 by the vacuum device 600 through the ventilation section 53. This depressurizes the interior of the cavity, and as... FIG. 12 As shown in (C), the pressure difference causes the solid-state imaging element 2 to bend along the curved shape of the curved receiving portion 50, and thus the solid-state imaging element 2 is mounted in the curved receiving portion 50.

[0247] In addition, the solid-state imaging element 2 is placed on the curved receiving portion 50 of the base 5 (see FIG. 12 (D)). Here, the nozzle 610 is positioned opposite the curved receiving portion 50 of the base 5 along the arrow-Z direction.

[0248] The membrane 3 and the solid-state imaging element 2 are pressurized by gas blown from the nozzle 610. The gas can be, for example, air, an inert gas, etc. The nozzle 610 is connected to a gas generating device (not shown). When air is used as the gas, a compressor is used as the gas generating device.

[0249] like FIG. 12As shown in (D), the pressure difference causes the solid-state imaging element 2 to bend along the curved shape of the curved receiving portion 50, and thus the solid-state imaging element 2 is mounted in the curved receiving portion 50. At this time, the gas in the cavity is released through the vent 53.

[0250] (6) First configuration of base 5

[0251] FIG. 12 This is a diagram depicting a first configuration based on a variant of base 5. FIG. 11 (A) shows an example of the planar configuration of the base 5 before installation. FIG. 12 (B) shows an example of the cross-sectional configuration of the base 5 before installation.

[0252] First, such as FIG. 3A As shown in (A) and (B), a base 5 is formed. The base 5 includes a curved receiving portion 50. A ventilation portion 53 is formed in the middle portion near the center of the front surface 50A of the base 5, in other words, in the middle portion of the curved receiving portion 50. The ventilation portion 53 is formed as a through hole penetrating from the front surface 50A to the rear surface 50B.

[0253] Furthermore, the embedded member 54 is formed within the ventilation section 53 in an embedded state. The embedded member 54 uses a porous material. A porous material is a material in which a large number of fine pores are formed. For detailed description, for example, fine powder of Al2O3, stainless steel (SUS), etc., are sintered in a ventilation state to obtain a porous material.

[0254] With the above FIG. 3B In the same manner as shown in (C), the pressure difference caused by decompression causes the solid-state imaging element 2 to bend along the curved shape of the curved receiving portion 50 using this base 5, thereby allowing the solid-state imaging element 2 to be mounted in the curved receiving portion 50.

[0255] In addition, with the above FIG. 12 In the same manner as shown in (D), the solid-state imaging element 2 is bent along the curved shape of the curved receiving portion 50 by means of a base 5, which is caused by the pressure difference due to the pressurization, thereby allowing the solid-state imaging element 2 to be mounted in the curved receiving portion 50.

[0256] (7) Fourth variation of the first manufacturing method

[0257] FIG. 12 A fourth variation of the first manufacturing method is shown, wherein the solid-state imaging element 2 is mounted on... FIG. 10 An example of the planar configuration of the base 5 before installation is shown on the curved receiving portion 50(A). FIG. 13 (B) shows an example of the cross-sectional configuration of the base 5 before installation. FIG. 13(C) shows an example of the cross-sectional configuration when the solid-state imaging element 2 is placed on the curved receiving portion 50 of the base 5. FIG. 13 (D) shows an example of a cross-sectional configuration of an imaging device 1 in which the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5.

[0258] First, such as FIG. 13 As shown in (A) and (B), a base 5 is formed. The base 5 includes a curved receiving portion 50. A pouch-shaped portion 55 is formed around the central portion near the center of the front surface 50A of the base 5. In the side view, the pouch-shaped portion 55 is formed as a groove shape that is further recessed from the front surface of the curved receiving portion 50 in the incident direction of the incident light L. In addition, the pouch-shaped portion 55 is formed as an annular shape when viewed from above, but is not particularly limited thereto. The pouch-shaped portion 55 absorbs excess adhesive 51 formed in the curved receiving portion 50 to effectively suppress or prevent adhesive 51 from overflowing from the curved receiving portion 50 and the solid-state imaging element 2.

[0259] Simultaneously, a solid-state imaging element 2 is formed.

[0260] like FIG. 12 As shown in (C), adhesive 51 is formed in the curved receiving portion 50 of the base 5, and solid-state imaging element 2 is placed on the curved receiving portion 50.

[0261] For example, the aforementioned pressure difference is generated, and the solid-state imaging element 2 is formed in a curved shape along the curved shape of the curved receiving portion 50, such as... FIG. 12 As shown in (D). Adhesive 51 allows the solid-state imaging element 2 to adhere to the interior of the curved receiving portion 50 to form an imaging device 1 in which the solid-state imaging element 2 is mounted on the base 5.

[0262] Here, a modified example of the position of the bag-shaped portion 55 is described.

[0263] FIG. 14 An example of the planar configuration of the base 5 is shown, and the variation in the position of the bag-shaped portion 55 is described. FIG. 14 It shows FIG. 14 An example of the cross-sectional configuration of the base 5 shown. FIG. 14 An example of another planar configuration of base 5 is shown. FIG. 14 It shows FIG. 14 An example of the cross-sectional configuration of the base 5 shown. FIG. 14 Another example of a planar configuration of base 5 is shown. FIG. 14 It shows FIG. 15A An example of the cross-sectional configuration of the base 5 shown.

[0264] like FIG. 15B and FIG. 15AAs shown, multiple element terminals (connection pads) BP are arranged in the peripheral portion of the solid-state imaging element 2. In the top and side views, the pouch-shaped portion 55 is arranged within the array of element terminals BP at a position that does not overlap with the element terminals BP.

[0265] Here, the bag-shaped portion 55 is formed as a groove. The recess 55 is formed with a depth (groove depth) in the range of several μm to tens of μm from the curved surface 50C. In addition, the bag-shaped portion 55 is formed with a width (groove width), for example, in the range of tens of μm to hundreds of μm.

[0266] In addition, such as FIG. 15C and FIG. 15D As shown, the bag-shaped portion 55 is disposed outside the array of component terminals BP in the plan view and side view at a position that does not overlap with the component terminals BP.

[0267] In addition, such as FIG. 15C and FIG. 15E As shown, the bag-shaped portion 55 is arranged in the plan view and side view at a position that does not overlap with the array of element terminals BP inside and outside the array of element terminals BP.

[0268] (8) Second configuration of base 5

[0269] FIG. 15F This is a diagram illustrating a second configuration based on a modified example of base 5. FIG. 15E (A) shows an example of the cross-sectional configuration of the base 5 and the solid-state imaging element 2 before installation. FIG. 15A (B) shows an example of a magnified cross-sectional configuration of the main parts of the base 5 and the solid-state imaging element 2.

[0270] like FIG. 15B As shown in (A) and (B), a step portion 56 is formed in the curved receiving portion 50 of the base 5. The step portion 56 is formed as a positioning guide that is adjacent to the peripheral end of the solid-state imaging element 2 placed in the curved receiving portion 50 to perform positioning of the solid-state imaging element 2 relative to the curved receiving portion 50.

[0271] According to the base 5 configured as described above, the positioning of the solid-state imaging element 2 on the curved receiving portion 50 can be easily and accurately performed by using the stepped portion 56.

[0272] (9) The third configuration of base 5

[0273] FIG. 15C An example of a planar configuration describing a third configuration based on a variation of base 5 is shown.

[0274] like FIG. 15D FIG. 15E FIG. 15F FIG. 16 FIG. 16 FIG. 16 FIG. 16 FIG. 17 FIG. 17As shown, a mark 57 is formed in the peripheral portion of the front surface 50A of the base 5. The mark 57 is formed as an alignment mark to perform positioning of the curved receiving portion 50 of the base 5 and the solid-state imaging element 2. For example, the mark 57 is positioned relative to the contour shape of the solid-state imaging element 2.

[0275] According to the base 5 configured as described above, the use of marker 57 makes it easy and accurate to position the solid-state imaging element 2 on the curved receiving portion 50.

[0276] It should be noted that in the base 5, the aforementioned ventilation portion 53, bag-shaped portion 55, or stepped portion 56 that contacts the solid-state imaging element 2 has a rounded corner shape, wherein the corner portion has rounded corners. In the area with a rounded shape, stress concentration that occurs in the solid-state imaging element 2, which is formed in a curved shape and subjected to stress, can be effectively suppressed or prevented.

[0277] <2. Second Implementation Method>

[0278] Reference Figures 18 to 21 A The present disclosure describes an imaging apparatus 1 according to a second embodiment and a method for manufacturing the imaging apparatus 1.

[0279] [Configuration of Imaging Device 1]

[0280] Figure 18 An example of the cross-sectional configuration of the imaging apparatus 1 according to the second embodiment is shown.

[0281] like Figure 18 As shown, the imaging device 1 includes an element section 100 and an optical section 200.

[0282] The component section 100 includes a base 5, a solid-state imaging element 2 mounted on a curved receiving portion 50 of the base 5, a wiring substrate 7, and a film 3 disposed between the base 5 and the solid-state imaging element 2. Meanwhile, the optical section 200 includes a lens group 210, a lens holder 211 for holding the lens group 210, an actuator 212, and an infrared cut-off filter (IRCF) 215.

[0283] (1) Arrangement of component section 100

[0284] Wiring substrate 7 uses FPC. FPC is formed using polyimide film or the like as a base material and is flexible (plastic). FPC is a circuit board in which multiple wiring layers and components are printed on a base material. FPC is thin, lightweight, and bendable and stretchable.

[0285] The wiring substrate 7 is equipped with semiconductor components, such as LSI (large-scale integrated circuit), such as capacitors, resistors and autofocus drivers to drive actuator 212, and is equipped with electrical components 72, such as connectors, to output imaging signals from solid-state imaging element 2 to external devices.

[0286] The wiring substrate 7 is disposed on the bending receiving portion 50 with respect to the solid-state imaging element 2, and is formed into a bent shape in the same manner as the solid-state imaging element 2. Furthermore, the wiring substrate 7 is formed into a bent shape and then firmly fixed to the base 5 using a bottom filling material.

[0287] Here, the solid-state imaging element 2 is configured, for example, by a CSP (chip-scale package) structure, which pulls the element terminal BP out from directly below the rear surface. In this case, fine solder balls are arranged on the rear surface 2B opposite to the light-receiving surface 2A of the solid-state imaging element 2. That is, the solid-state imaging element 2 adopts a ball grid array (BGA) structure. Pads are set at positions corresponding to the solder balls on the wiring substrate 7.

[0288] Solid-state imaging element 2 is placed on wiring substrate 7, and paired solder balls and pads are joined, thereby allowing solid-state imaging element 2 to be mounted on wiring substrate 7. Ultrasonic vibration method, thermoforming method, etc. can be used for joining.

[0289] The imaging device 1 configured as described above does not use wiring 9 (see... Figure 8 The coupling of the solid-state imaging element 2 is such that the wiring 9 is not guided around the outside of the solid-state imaging element 2. This allows for a reduction in the size (chip size) of the solid-state imaging element 2 because the wiring 9 is not guided around the outside of the solid-state imaging element 2.

[0290] Furthermore, the reduced wiring length when the solid-state imaging element 2 and the wiring substrate 7 are coupled together enables a higher operating speed for the imaging device 1.

[0291] Furthermore, the solid-state imaging element 2 having the above-described CSP structure can be a stacked solid-state imaging element to which a logic substrate is attached. In this case, the thickness of the solid-state imaging element 2 increases; however, the area of ​​the peripheral circuitry disposed around the light-receiving surface 2A in the solid-state imaging element 2 can be reduced.

[0292] The solid-state imaging element 2, configured as described above, can increase the number of times it is obtained from the semiconductor wafer during the manufacturing process. Furthermore, large-scale circuitry with added value can be assigned to the logic substrate side.

[0293] In the same manner as the imaging device 1 according to the first embodiment, the base 5 includes a curved receiving portion 50 on the front surface 50A. The curved shape of the curved receiving portion 50 is formed to allow the CRA to be incident perpendicularly at any image height in a manner corresponding to the optical design of the module lens.

[0294] When the solid-state imaging element 2, etc., is formed into a curved shape by the pressure difference between the gases, the base 5 is provided with a ventilation section 53, which releases gas from the space closed by the curved receiving portion 50 of the solid-state imaging element 2, the membrane 3, and the base 5. The ventilation section 53 is formed by a through hole that penetrates from the curved surface 50C of the curved receiving portion 50 of the base 5 to the rear surface 50B opposite to the curved surface.

[0295] Embedded component 54 is embedded in ventilation section 53 (refer to) Figure 13 (A) and (B)). The embedded member 54 may be a porous material.

[0296] When the ventilation portion 53 of the base 5 is blocked by the embedded member 54, the phenomenon in which long-wavelength incident light L passes through the thinned solid-state imaging element 2 and is reflected by the base 5 so that the shape of the curved receiving portion 50 is reflected therein can be effectively suppressed or prevented.

[0297] Furthermore, the blockage of the ventilation section 53 effectively suppresses or prevents the loss of stress balance of the base of the solid-state imaging element 2 mounted on the curved receiving section 50 of the base 5 near the ventilation section 53. Therefore, in the solid-state imaging element 2, the degradation of dark current and white spots can be effectively suppressed or prevented.

[0298] Furthermore, when the embedded member 54 is formed of a material with high thermal conductivity, the heat dissipation effect can be improved.

[0299] From this perspective, as the embedded component 54, one or more materials are selected from those having a reflectivity close to that of the base 5, materials capable of filling the entire area of ​​the ventilation section 53 without creating gaps, and materials with high thermal conductivity.

[0300] The membrane 3 is formed from a thin organic material with high sealing performance and plasticity. During the manufacturing process, the membrane 3 is sealed, completely covered and attached to the curved receiving portion 50 of the base 5.

[0301] In addition, adhesive is applied to both the front and rear surfaces of membrane 3.

[0302] According to the imaging device 1 configured as described above, in the manufacturing method (installation method) using the pressure difference caused by depressurization or pressurization, gas leakage (e.g., air leakage) can be effectively suppressed or prevented when installing the solid imaging element 2 with a bending receiving portion 50 smaller than the base 5.

[0303] As the adhesive to be applied to film 3, as described above, one or more resin adhesives selected from epoxy resins, acrylic resins, and blue-green resins are used. UV-curable, temperature-curable, time-curable, etc., adhesives can be used, and there are no particular limitations on the curing type.

[0304] When a UV-curable adhesive is used, the base 5 is formed of a UV-transmitting material. For example, UV light is irradiated from the side of the rear surface 50B of the base 5.

[0305] (2) Configuration of the optical section 200

[0306] In the optical section 200, the lens group 210 includes at least one or more lenses. The lens group 210 forms an image of an object on the light-receiving surface 2A of the solid-state imaging element 2, which is fixed in a curved shape to the curved receiving portion 50 of the base 5.

[0307] The curved light-receiving surface 2A of the solid-state imaging element 2 has the effect of reducing image plane distortion of the lens. Therefore, in terms of lens design, it is possible to reduce the number of lenses, reduce the height of the optical section 200, and achieve higher resolution.

[0308] exist Figure 18 In this imaging device 1, actuator 212 drives a predetermined lens included in lens group 210 in one or more directions selected from the up-down direction, the left-right direction, and the front-back direction. That is, actuator 212 realizes functions such as autofocus and shaky correction in imaging device 1.

[0309] It should be noted that the actuator 212 can drive the base 5 and the solid-state imaging element 2 in one or more directions selected from the up-down, left-right and front-back directions to achieve functions such as autofocus and manual correction.

[0310] Furthermore, the imaging device 1 can be configured as a hand shake correction type imaging device comprising all components of the tilt (tilt) lens group 210, the base 5, and the solid-state imaging element 2.

[0311] The infrared cutoff filter 215 targets the incident light L converged by the lens group 210, blocking light with wavelength components other than those of visible light, especially those of infrared light.

[0312] (3) Configuration of wiring board 7

[0313] The wiring substrate 7 seals and covers all openings of the bending receiving portion 50 of the base 5 without inserting a double-sided adhesive film, and is fixed to the front surface 50A around the bending receiving portion 50 of the base 5. For example, the chuck 620 (see...) Figure 5 () Used for fixing. Resin adhesive can be used to fix the base 5 and the wiring substrate 7 to each other.

[0314] According to the imaging device 1 configured as described above, in the manufacturing method (installation method) using the pressure difference caused by depressurization or pressurization, gas leakage (e.g., air leakage) can be effectively suppressed or prevented when installing the solid imaging element 2 with a bending receiving portion 50 smaller than the base 5.

[0315] Note that the resin adhesive can be applied to the rear surface of the wiring substrate 7 on the side of the solid-state imaging element 2. The method for curing the adhesive is as described above.

[0316] However, when the resin adhesive is applied to the area on the rear surface of the wiring substrate 7 that contacts the curved surface 50C of the base 5, the resin adhesive applied to the front surface 50A of the base 5 needs to be partially cured. For this purpose, a UV-curable resin adhesive is preferably used. That is, the resin adhesive is applied to the entire area on the rear surface side of the wiring substrate 7 to contact the base 5, and in order to fix the wiring substrate 7 to the flat portion of the base 5, UV irradiation is performed only on the flat portion.

[0317] [Based on the configuration of a modified example of imaging device 1]

[0318] Figure 19 An example of the cross-sectional configuration of an imaging apparatus according to a variation of the second embodiment is shown.

[0319] like Figure 19 As shown, the imaging device 1 includes a resin film 4 containing infrared absorbing material instead of an infrared cutoff filter 215. The resin film 4 is formed in a curved shape on the light-receiving surface 2A of the solid-state imaging element 2 along the curved shape of the light-receiving surface 2A.

[0320] Furthermore, the aforementioned infrared cutoff filter 215 can be formed into a curved shape from a glass material with infrared absorption function using a lens forming method.

[0321] According to the imaging device 1 configured as described above, the resin film 4 is provided so that the characteristic degradation caused by the obliquely incident light L can be effectively suppressed or prevented.

[0322] In addition, the infrared cutoff filter 215 does not need to be formed into a plate shape, thus increasing the freedom of lens design.

[0323] [Work and Results]

[0324] In the imaging apparatus 1 according to the second embodiment, similar operation and effects as those obtained by the imaging apparatus 1 according to the first embodiment can be obtained.

[0325] [First Manufacturing Method of Imaging Device 1]

[0326] ReferenceFigure 20A and Figure 20H The first manufacturing method of the imaging device 1 according to the second embodiment is described. Figures 20A to 20H Examples of cross-sections depicting the steps of the first manufacturing method are shown in both examples. The first manufacturing method is as follows.

[0327] First, such as Figure 20A As shown, a base 5 is formed. The base 5 includes a curved receiving portion 50. In addition, the base 5 includes a ventilation portion 53. An insert member 54 formed of a porous material can be inserted into the ventilation portion 53.

[0328] like Figure 20B As shown, a membrane 3 forms the opening of the curved receiving portion 50 of the sealing base 5. The membrane 3 is formed of an organic material. Adhesive is applied to both surfaces of the membrane 3.

[0329] At the same time, such as Figure 20C As shown, the solid-state imaging element 2 is formed independently of the base 5. Fine solder balls (not shown) are formed on the rear surface 2B opposite to the light-receiving surface 2A of the solid-state imaging element 2.

[0330] like Figure 20D As shown, a wiring substrate 7 is fabricated, and a solid-state imaging element 2 is mounted on the wiring substrate 7. Pads (not shown) are formed on the wiring substrate 7. Solder balls are bonded to the pads to allow the solid-state imaging element 2 to be mounted on the wiring substrate 7. For bonding, ultrasonic vibration or thermoforming is used.

[0331] Here, the wiring substrate 7 is manufactured using thin-film printing technology. Specifically, a Cu foil is attached to a substrate material, and a circuit pattern is formed on the Cu foil. An etching technique is used to form the circuit pattern. The aforementioned electronic components 72 are then mounted on the wiring substrate 7.

[0332] like Figure 20E As shown, the wiring substrate 7 is adhered to the film 3 attached to the base 5. At this time, mark 57 (see...) Figure 17 The wiring substrate 7 is formed on the base 5, and thus an optical alignment mechanism is used to perform precise positioning of the wiring substrate 7 relative to the base 5.

[0333] It should be noted that positioning and alignment marks can be formed on the thin film 3. Furthermore, the stepped portion 56 (see...) serves as a positioning guide. Figure 16 A and Figure 16 B) It can be formed on the base 5. In addition, a positioning pin can be provided on one of the base 5 or the wiring board 7, and a positioning hole can be provided on the other base so that the positioning pin and the positioning hole can engage with each other to allow positioning.

[0334] For example, the end of the solid-state imaging element 2 mounted on the wiring substrate 7 can be fixed by a bottom filling material. In this case, the possibility of the solid-state imaging element 2 being damaged due to impact or the like can be effectively suppressed or prevented.

[0335] like Figure 20F As shown, the membrane 3, the solid-state imaging element 2, and the wiring substrate 7 are formed into a curved shape along the curved surface 50C of the curved receiving portion 50 of the base 5. Here, the interior of the curved receiving portion 50 is depressurized by the ventilation portion 53, and the pressure difference causes the membrane 3, the solid-state imaging element 2, and the wiring substrate 7 to be formed into a curved shape (see...). Figure 12 (C)).

[0336] Then the adhesive is cured, and the membrane 3, solid-state imaging element 2 and wiring substrate 7 are fixed to the base 5.

[0337] In addition, such as Figure 20G As shown, the membrane 3, the solid-state imaging element 2, and the wiring substrate 7 can be formed into a curved shape by the pressure difference generated by the pressurization of the gas from the nozzle 610.

[0338] As described above, one or more resin adhesives selected from epoxy resins, acrylic resins, and blue-green resins are used as the adhesive. UV-curable, temperature-curable, time-curable, and other curing types can be used, and there are no particular limitations on the curing type.

[0339] When a UV-curable adhesive is used, the base 5 is formed of a UV-transmitting material. For example, UV light is irradiated from the side of the rear surface 50B of the base 5.

[0340] When using temperature-curing or time-curing adhesives, the base 5 is formed of a UV-resistant material.

[0341] like Figure 20H As shown, the embedded member 54 is embedded in the ventilation section 53 of the base 5. When the ventilation section 53 is blocked by the embedded member 54, the phenomenon in which long-wavelength incident light L passes through the thinned solid-state imaging element 2 and is reflected by the base 5 so that the shape of the curved receiving section 50 is reflected therein can be effectively suppressed or prevented.

[0342] Furthermore, the blockage of the ventilation section 53 effectively suppresses or prevents the loss of stress balance of the base of the solid-state imaging element 2 mounted on the curved receiving section 50 of the base 5 near the ventilation section 53. Therefore, in the solid-state imaging element 2, the degradation of dark current and white spots can be effectively suppressed or prevented.

[0343] Furthermore, when the embedded member 54 is formed of a material with high thermal conductivity, the heat dissipation effect can be improved.

[0344] From this perspective, as the embedded component 54, one or more materials are selected from those having a reflectivity close to that of the base 5, materials capable of filling the entire area of ​​the ventilation section 53 without creating gaps, and materials with high thermal conductivity.

[0345] In addition, as a material with high thermal conductivity, a high melting point material can be used as the embedding member 54, and the embedding member 54 can be pasted. Sn, Ag, Cu, Pb, etc., can be used as high melting point materials.

[0346] Furthermore, the embedded member 54 may be formed on a metal disposed on one side of the wiring substrate 7 at a position corresponding to the ventilation portion 53. Cu, formed on the metal by electroplating, is used as the embedded member 54. Alternatively, conductive resin, such as that used for underfill materials, may be used as the embedded member 54.

[0347] It should be noted that in the second embodiment, the wiring substrate 7 and the film 3 are disposed between the solid-state imaging element 2 and the base 5. When the materials and thicknesses of the wiring substrate 7 and the film 3 are appropriately set, the incident light L is not transmitted to the curved receiving portion 50 of the base 5. That is, the opening shape of the base 5 can be effectively suppressed or prevented from being reflected. In this case, the manufacturing cost of the imaging device 1 can be reduced.

[0348] Next, the module is installed as a component on base 5 (see...). Figure 18 A spacer (not shown) is provided on the wiring substrate 7 to fix the actuator 212 to the wiring substrate 7.

[0349] The spacer is formed of, for example, a resin material, such as matte black synthetic resin or a synthetic resin colored matte black. Therefore, the reflection of incident light L can be suppressed in the spacer. Furthermore, the spacer can reduce stray light.

[0350] Furthermore, a fixative can be filled between the spacer and the solid-state imaging element 2. The fixative can enhance the adhesion between the solid-state imaging element 2 and the wiring substrate 7.

[0351] After fastening the adhesive, the actuator 212, including the infrared cutoff filter 215, and the lens assembly 210 are attached to the spacer, as follows: Figure 18 As shown.

[0352] When a series of steps are completed, the imaging device 1 is finished.

[0353] [Second manufacturing method of imaging device 1]

[0354] refer to Figures 21 A to 20G The second manufacturing method of the imaging device 1 according to the second embodiment is described. Figures 21 A to 20GExamples of cross-sections illustrating the steps of the second manufacturing method are shown in both examples. The second manufacturing method is as follows.

[0355] First, such as Figure 21 A As shown, a solid-state imaging element 2 is formed. Fine solder balls (not shown) are formed on the rear surface 2B opposite to the light-receiving surface 2A of the solid-state imaging element 2.

[0356] like Figure 21 B As shown, a wiring substrate 7 is fabricated, and a solid-state imaging element 2 is mounted on the wiring substrate 7. Pads (not shown) are formed on the wiring substrate 7. Solder balls are bonded to the pads to allow the solid-state imaging element 2 to be mounted on the wiring substrate 7. As a bonding method, ultrasonic vibration or thermoforming is used. The aforementioned electronic component 72 is mounted on the wiring substrate 7.

[0357] like Figure 21 C As shown, adhesive 71 is applied to the rear surface of the wiring substrate 7 on one side of the base 5. It should be noted that adhesive 71 can be applied to the curved surface 50C of the curved receiving portion 50 of the base 5.

[0358] like Figure 21 D As shown, the wiring substrate 7 is adhered to the base 5. The wiring substrate 7 is formed on the front surface 50A of the base 5 to completely block the opening of the bending receiving portion 50. Therefore, it is not necessary to use the wiring substrate 7 in the first manufacturing method. Figure 20B The film 3 formed in the steps shown is replaced by the wiring substrate 7.

[0359] like Figure 21 E As shown, the solid-state imaging element 2 and the wiring substrate 7 are formed in a curved shape along the curved surface 50C of the curved receiving portion 50 of the base 5. Here, the interior of the curved receiving portion 50 is depressurized by the ventilation portion 53, and this pressure difference causes the solid-state imaging element 2 and the wiring substrate 7 to be formed in a curved shape.

[0360] In addition, such as Figure 21 F As shown, the membrane 3, the solid-state imaging element 2, and the wiring substrate 7 can be formed into a curved shape by the pressure difference generated by the pressurization of the gas from the nozzle 610.

[0361] like Figure 21 G As shown, the embedded component 54 is embedded in the ventilation section 53 of the base 5.

[0362] Subsequently, in the same manner as the first manufacturing method, the attachment of the actuator 212, including the infrared cut-off filter 215, the lens group 210, and the spacer (not shown), is performed.

[0363] When a series of steps are completed, the imaging device 1 is finished.

[0364] [Work and Results]

[0365] In the manufacturing method of the imaging device 1 according to the second embodiment, similar operation and effects as those obtained by the manufacturing method of the imaging device 1 according to the first embodiment can be obtained.

[0366] <3. Third Implementation Method>

[0367] Reference Figures 22 to 6 8. The imaging apparatus 1 and the method of manufacturing the imaging apparatus 1 according to the third embodiment of the present disclosure are described.

[0368] [Configuration of Imaging Device 1]

[0369] Figure 22 An example of the cross-sectional configuration of the imaging apparatus 1 according to the third embodiment is shown. The third embodiment is a practical application example of the imaging apparatus 1 and the method of manufacturing the imaging apparatus 1 according to the second embodiment.

[0370] like Figure 22 As shown, the imaging device 1 includes an element section 100 and an optical section 200 in the same manner as the imaging device 1 according to the second embodiment. Furthermore, the element section 100 includes a solid-state imaging element 2, a film 3, a base 5, and a mounting substrate 700 to be mounted together with the base 5.

[0371] (1) Arrangement of component section 100

[0372] The solid-state imaging element 2 is configured, for example, by a CSP structure that pulls the element terminal BP out from directly below the rear surface. In this case, fine solder balls are arranged on the rear surface 2B opposite to the light-receiving surface 2A of the solid-state imaging element 2. That is, the solid-state imaging element 2 adopts a BGA structure.

[0373] In addition, the solid-state imaging element 2 may adopt a pad grid array (Cu-LGA: Cu-pad grid array) structure in which Cu pins are arranged as terminals.

[0374] The imaging device 1 configured as described above does not use wiring 9 (see... Figure 8 The coupling of the solid-state imaging element 2 is such that the wiring 9 is not guided around the outside of the solid-state imaging element 2. This allows for a reduction in the size of the solid-state imaging element 2 because the wiring 9 is not guided around the outside of the solid-state imaging element 2.

[0375] Furthermore, the reduced wiring length when coupling the solid-state imaging element 2 and the mounting substrate 700 together enables a higher operating speed for the imaging device 1.

[0376] Infrared cutoff filter 215 (see) Figure 22The infrared cutoff filter 215 is arranged on the light-receiving surface 2A side of the solid-state imaging element 2. It is a multilayer film type with absorption type, stacked dielectric films with different refractive indices, or a hybrid type that combines absorption type and multilayer film type.

[0377] Furthermore, the solid-state imaging element 2 with a CSP structure can be a stacked solid-state imaging element to which a logic substrate is attached. In this case, the thickness of the solid-state imaging element 2 increases; however, the area of ​​the peripheral circuitry disposed around the light-receiving surface 2A in the solid-state imaging element 2 can be reduced.

[0378] The solid-state imaging element 2, configured as described above, can increase the number of times it is obtained from semiconductor wafers during manufacturing. Furthermore, large-scale circuitry with added value can be assigned to the logic substrate side.

[0379] In the same manner as the imaging device 1 according to the first embodiment, the base 5 includes a curved receiving portion 50 on the front surface 50A. The curved shape of the curved receiving portion 50 is formed to allow the CRA to be incident perpendicularly at any image height in a manner corresponding to the optical design of the module lens.

[0380] The base 5 provided in the curved light-receiving surface 2A of the solid-state imaging element 2 allows for a reduction in image plane distortion of the lens. Therefore, in terms of lens design, it is possible to reduce the number of lenses, reduce the height of the optical section 200, and achieve higher resolution, etc.

[0381] Furthermore, the curved receiving portion 50 of the base 5 can be formed into a curved surface shape in which the normal of the curved surface 50C is consistent with the CRA of the module lens.

[0382] Furthermore, based on the base 5 with this shape, even at high image heights, the main beam is incident vertically onto the solid-state imaging element 2, thereby effectively suppressing sensitivity loss caused by pixel vignetting of the solid-state imaging element 2 and image quality degradation such as tilted light mixing.

[0383] When the solid-state imaging element 2, etc., is formed into a curved shape by the pressure difference between the gases, the base 5 is provided with a ventilation section 53, which releases gas from the space closed by the curved receiving portion 50 of the solid-state imaging element 2, the membrane 3, and the base 5. The ventilation section 53 is formed by a through hole that penetrates from the curved surface 50C of the curved receiving portion 50 of the base 5 to the rear surface 50B opposite to the curved surface.

[0384] Embedded component 54 is embedded in ventilation section 53 (refer to) Figure 13 (A) and (B)). The embedded member 54 may be a porous material.

[0385] Furthermore, the ventilation section 53 of the base 5 serves, for example, as a gas vent during the manufacturing process, and multiple ventilation sections 53 are arranged and also serve as an array of holes. An electrical conductor 58 is embedded in the ventilation section 53, which also serves as an array of holes. One end of the electrical conductor 58 is electrically coupled to the solid-state imaging element 2, and the other end of the electrical conductor 58 is electrically coupled to the mounting substrate 700.

[0386] The membrane 3 is formed from a thin organic material with high sealing performance and plasticity. During the manufacturing process, the membrane 3 is sealed, completely covered and attached to the curved receiving portion 50 of the base 5.

[0387] In addition, adhesive is applied to both the front and rear surfaces of membrane 3.

[0388] According to the imaging device 1 configured as described above, in the manufacturing method (installation method) using the pressure difference caused by depressurization or pressurization, gas leakage (e.g., air leakage) can be effectively suppressed or prevented when installing the solid imaging element 2 with a bending receiving portion 50 smaller than the base 5.

[0389] As the adhesive to be applied to film 3, as described above, one or more resin adhesives selected from epoxy resins, acrylic resins, and blue-green resins are used. UV-curable, temperature-curable, time-curable, etc., adhesives can be used, and there are no particular limitations on the curing type.

[0390] When a UV-curable adhesive is used, the base 5 is formed of a UV-transmitting material. For example, UV light is irradiated from the side of the rear surface 50B of the base 5.

[0391] In membrane 3, an opening 3H is formed at a location serving as an electrical coupling region between the solid-state imaging element 2 and the mounting substrate 700. The periphery of the opening 3H in membrane 3 is adhered to the solid-state imaging element 2 by adhesive. This allows for effective suppression or prevention of gas leakage from the opening 3H in membrane 3.

[0392] With the base 5 having a ventilation section 53 (illustration omitted here) in addition to the hole array, the solid-state imaging element 2 is mounted on the base 5, and then the embedding member 54 is embedded in the ventilation section 53 (see...). Figure 13 (A) and (B)).

[0393] When the ventilation portion 53 of the base 5 is blocked by the embedded member 54, the phenomenon in which long-wavelength incident light L passes through the thinned solid-state imaging element 2 and is reflected by the base 5 so that the shape of the curved receiving portion 50 is reflected therein can be effectively suppressed or prevented.

[0394] Furthermore, the blockage of the ventilation section 53 effectively suppresses or prevents the loss of stress balance of the base of the solid-state imaging element 2 mounted on the curved receiving section 50 of the base 5 near the ventilation section 53. Therefore, in the solid-state imaging element 2, the degradation of dark current and white spots can be effectively suppressed or prevented.

[0395] Furthermore, when the embedded member 54 is formed of a material with high thermal conductivity, the heat dissipation effect can be improved.

[0396] From this perspective, as the embedded component 54, one or more materials are selected from those having a reflectivity close to that of the base 5, materials capable of filling the entire area of ​​the ventilation section 53 without creating gaps, and materials with high thermal conductivity.

[0397] In addition, as a material with high thermal conductivity, a high-melting-point material can be used as the embedding member 54, and the embedding member 54 can be pasted. Sn, Ag, Cu, Pb, etc., can be used as high-melting-point materials.

[0398] Furthermore, the embedded member 54 may be formed on a metal disposed at a position corresponding to the ventilation portion 53 on the wiring substrate 7 side. Cu, formed on the metal by electroplating, is used as the embedded member 54. Alternatively, conductive resin, such as that used for underfill materials, may be used as the embedded member 54.

[0399] (2) Configuration of the optical section 200

[0400] The optical unit 200 includes a lens group 210, a lens holder 211 for holding the lens group 210, an actuator 212, and an infrared cutoff filter 215.

[0401] The components of the optical unit 200 are the same as or substantially the same as those of the optical unit 200 of the imaging apparatus 1 according to the second embodiment. Therefore, its description is omitted here.

[0402] (3) Configuration of mounting base plate 700

[0403] Mounting substrate 700 is mounted with base 5. Mounting substrate 700 includes base material 710, mounting terminals (shores) 701 disposed on the surface of base material 710 on the side of base 5, coupling connector 702, and wiring layer (not shown). In addition, electronic components 720, such as the semiconductor components described above, are mounted on base material 710 in mounting substrate 700.

[0404] For example, base material 710 is formed from epoxy resin.

[0405] Mounting terminal 701 is electrically coupled to element terminal BP (not shown) of solid-state imaging element 2 via an electrical conductor 58 embedded in the ventilation portion 53 of base 5 and the aforementioned solder ball. Mounting terminal 701 is formed, for example, of Cu.

[0406] The coupling connector 702 is electrically coupled to the mounting terminal 701, electronic component 720, etc. via the wiring layer.

[0407] [Based on the configuration of a modified example of imaging device 1]

[0408] Figure 23 An example of the cross-sectional configuration of an imaging apparatus according to a variation of the third embodiment is shown.

[0409] like Figure 23 As shown, the imaging device 1 includes a resin film 4 containing infrared absorbing material instead of an infrared cutoff filter 215. The resin film 4 is formed in a curved shape on the light-receiving surface 2A of the solid-state imaging element 2 along the curved shape of the light-receiving surface 2A.

[0410] Furthermore, the aforementioned infrared cutoff filter 215 can be formed into a curved shape from a glass material with infrared absorption function using a lens forming method.

[0411] According to the imaging device 1 configured as described above, the resin film 4 is provided so that the characteristic degradation caused by the obliquely incident light L can be effectively suppressed or prevented.

[0412] In addition, the infrared cutoff filter 215 does not need to be formed into a plate shape, thus increasing the freedom of lens design.

[0413] [Work and Results]

[0414] In the imaging apparatus 1 according to the third embodiment, similar operation and effects as those obtained by the imaging apparatus 1 according to the second embodiment can be obtained.

[0415] [First Manufacturing Method of Imaging Device 1]

[0416] refer to Figure 24A and Figures 24B to 32 A description of a first manufacturing method of the imaging apparatus 1 according to the third embodiment is given. Figure 24A and Figures 24B to 32 Examples of steps describing the first manufacturing method are shown in both examples. The first manufacturing method is as follows.

[0417] First, such as Figure 24A and 24BAs shown, a base 5 is formed. The base 5 includes a curved receiving portion 50. In addition, the base 5 includes a ventilation portion 53. In the curved receiving portion 50, a plurality of ventilation portions 53 are arranged at predetermined intervals between each other in the arrow-X direction and the arrow-Y direction, and are formed as an array of holes.

[0418] Furthermore, the base 5 is formed of an insulating material, or if the base 5 is conductive, an insulating film is formed at least on the inner wall of the ventilation portion 53 of the base 5.

[0419] like Figure 25A and 25B As shown, a membrane 3 forms the opening of the curved receiving portion 50 of the sealing base 5. The membrane 3 is formed of an organic material. Adhesive is applied to both surfaces of the membrane 3.

[0420] Meanwhile, the solid-state imaging element 2 is formed independently of the base 5. Fine solder balls (not shown) are formed on the rear surface 2B opposite to the light-receiving surface 2A of the solid-state imaging element 2. Figure 26A and Figure 26B ).

[0421] like Figure 26A and 26B As shown, the solid-state imaging element 2 is adhered to the membrane 3.

[0422] like Figure 27A and 27B As shown, the membrane 3 and the solid-state imaging element 2 are formed in a curved shape along the curved surface 50C of the curved receiving portion 50 of the base 5. Here, the interior of the curved receiving portion 50 is depressurized by the ventilation portion 53, and this pressure difference causes the membrane 3 and the solid-state imaging element 2 to be formed in a curved shape.

[0423] Furthermore, the step portion 56 is pre-formed in the base 5, and the end of the solid-state imaging element 2 and the step portion 56 are aligned with each other when formed into a curved shape. That is, the positioning of the solid-state imaging element 2 is performed in a self-aligning manner relative to the curved receiving portion 50 of the base 5.

[0424] The adhesive is then cured, and the membrane 3 and the solid-state imaging element 2 are fastened to the base 5.

[0425] Here, as Figure 28 As shown, the membrane 3 and the solid imaging element 2 can be shaped into a curved shape by the pressure difference caused by the pressurization of the gas from the nozzle 610.

[0426] Next, as Figure 29 As shown, an opening 3H is formed in the film 3 at a location corresponding to the element terminal BP of the solid-state imaging element 2. The opening 3H is formed by etching through the ventilation section 53 from the rear surface 50B side of the base 5. Wet etching or dry etching is used as the etching method.

[0427] It should be noted that when opening 3H is formed, the component terminal BP does not deviate from the position of opening 3H. Furthermore, when the insulating film is formed on the inner wall of the ventilation section 53, the insulating film is formed to have a thickness that does not decrease due to etching.

[0428] like Figure 30 As shown, an electrical conductor 58 is formed inside the ventilation portion 53 of the base 5. The end of the electrical conductor 58 on the solid-state imaging element 2 side is electrically coupled to the element terminal BP of the solid-state imaging element 2.

[0429] The electrical conductor 58 is formed of Cu, for example, Cu, which is formed as a film, for example by plating.

[0430] Alternatively, the electrical conductor 58 can be formed by selectively bonding high-melting-point materials such as Sn, Ag, Cu, and Pb. In this case, the electrical conductor 58 is electrically coupled to the component terminal BP via solder bonding. When using high-melting-point materials, one or more layers selected from Au and nickel (Ni) are formed on the surface of the component terminal BP. This improves solder adhesion (solder wettability).

[0431] like Figure 31 As shown, a mounting substrate 700 is prepared, and the solid-state imaging element 2 and the base 5 are positioned relative to the mounting substrate 700. An adhesive (not shown) is partially applied to at least one of the mounting substrate 700 or the solid-state imaging element 2. For example, a resin adhesive is used as the adhesive. After the mounting substrate 700 and the base 5 are attached to each other, the adhesive cures.

[0432] Subsequently, as Figure 32 As shown, the solid-state imaging element 2 is mounted on the mounting substrate 700. During mounting, one end of the electrical conductor 58 formed in the ventilation portion 53 of the base 5 is electrically coupled to the element terminal BP of the solid-state imaging element 2, and the other end of the electrical conductor 58 is electrically coupled to the mounting terminal 701 of the mounting substrate 700. This connection is achieved using an ultrasonic vibration method or a thermo-pressurized bonding method.

[0433] Considering the potential damage to blocking metals, it is preferable to connect one end of the electrical conductor 58 to the other end simultaneously.

[0434] In addition, the base 5 is securely fastened to the mounting base 700 using bottom filling material.

[0435] As mentioned above Figure 22 As shown, an actuator 212, including an infrared cutoff filter 215, and a lens assembly 210 are attached to a spacer (not shown).

[0436] When a series of steps are completed, the imaging device 1 is finished.

[0437] [Second manufacturing method of imaging device 1]

[0438] Reference Figure 33A and Figures 33B to 40 The second manufacturing method of the imaging device 1 according to the third embodiment is described. Figure 33A and Figures 33B to 40 Examples of steps describing the second manufacturing method are shown in both examples. The second manufacturing method is as follows.

[0439] First, such as Figure 33A and Figure 33B As shown, a base 5 is formed. The base 5 includes a curved receiving portion 50. In addition, the base 5 includes a ventilation portion 53. In the curved receiving portion 50, a plurality of ventilation portions 53 are arranged at predetermined intervals between each other in the arrow-X direction and the arrow-Y direction, and are formed as an array of holes.

[0440] Furthermore, the base 5 is formed of an insulating material, or if the base 5 is conductive, an insulating film is formed at least on the inner wall of the ventilation portion 53 of the base 5.

[0441] like Figure 34A and 34B As shown, a membrane 3 forms the opening of the curved receiving portion 50 of the sealing base 5. The membrane 3 is formed of an organic material. Adhesive is applied to both surfaces of the membrane 3.

[0442] Here, in the second manufacturing method, the opening 3H is pre-formed in the membrane 3.

[0443] Meanwhile, the solid-state imaging element 2 is formed independently of the base 5. Fine solder balls (not shown) are formed on the rear surface 2B opposite to the light-receiving surface 2A of the solid-state imaging element 2 (see [reference]). Figure 35A and Figure 35B Positioning of the solder ball is performed in the opening 3H of membrane 3; the solder ball is located in the opening 3H.

[0444] like Figure 35A and 35B As shown, the solid-state imaging element 2 is adhered to the membrane 3.

[0445] like Figure 36A and Figure 36B As shown, the membrane 3 and the solid-state imaging element 2 are formed in a curved shape along the curved surface 50C of the curved receiving portion 50 of the base 5. Here, the interior of the curved receiving portion 50 is depressurized by the ventilation portion 53, and this pressure difference causes the membrane 3 and the solid-state imaging element 2 to be formed in a curved shape.

[0446] Furthermore, the step portion 56 is pre-formed in the base 5, and the end of the solid-state imaging element 2 and the step portion 56 are aligned with each other when formed into a curved shape. That is, the positioning of the solid-state imaging element 2 is performed in a self-aligning manner relative to the curved receiving portion 50 of the base 5.

[0447] The adhesive is then cured, and the membrane 3 and the solid-state imaging element 2 are fastened to the base 5.

[0448] Here, as Figure 37 As shown, the membrane 3 and the solid imaging element 2 can be shaped into a curved shape by the pressure difference caused by the pressurization of the gas from the nozzle 610.

[0449] like Figure 38 As shown, an electrical conductor 58 is formed inside the ventilation portion 53 of the base 5. The end of the electrical conductor 58 on the solid-state imaging element 2 side is electrically coupled to the element terminal BP of the solid-state imaging element 2.

[0450] The electrical conductor 58 is formed of Cu, for example, Cu, which is formed as a film, for example by plating.

[0451] Alternatively, the electrical conductor 58 can be formed by selectively bonding high-melting-point materials such as Sn, Ag, Cu, and Pb. In this case, the electrical conductor 58 is electrically coupled to the component terminal BP via solder bonding. When using high-melting-point materials, one or more layers selected from Au and Ni are formed on the surface of the component terminal BP. This improves solder adhesion.

[0452] like Figure 39 As shown, a mounting substrate 700 is prepared, and the solid-state imaging element 2 and the base 5 are positioned relative to the mounting substrate 700. An adhesive (not shown) is partially applied to at least one of the mounting substrate 700 or the solid-state imaging element 2. For example, a resin adhesive is used as the adhesive. After the mounting substrate 700 and the base 5 are attached to each other, the adhesive cures.

[0453] Subsequently, as Figure 40 As shown, the solid-state imaging element 2 is mounted on the mounting substrate 700. During mounting, one end of the electrical conductor 58 formed in the ventilation portion 53 of the base 5 is electrically coupled to the element terminal BP of the solid-state imaging element 2, and the other end of the electrical conductor 58 is electrically coupled to the mounting terminal 701 of the mounting substrate 700. This connection is achieved using an ultrasonic vibration method or a thermo-pressurized bonding method.

[0454] Considering the potential damage to blocking metals, it is preferable to connect one end of the electrical conductor 58 to the other end simultaneously.

[0455] In addition, the base 5 is securely fastened to the mounting base 700 using bottom filling material.

[0456] As mentioned above Figure 22 As shown, an actuator 212, including an infrared cutoff filter 215, and a lens assembly 210 are attached to a spacer (not shown).

[0457] When a series of steps are completed, the imaging device 1 is finished.

[0458] [Third manufacturing method for imaging device 1]

[0459] Reference Figure 41 A and Figures 41 B to 49 A third manufacturing method of the imaging apparatus 1 according to the third embodiment is described. Figure 41 A and Figures 41 B to 49 Examples of the steps describing the third manufacturing method are shown in both examples. The third manufacturing method is as follows.

[0460] First, such as Figure 41 A and Figure 41 B As shown, a base 5 is formed. The base 5 includes a curved receiving portion 50. In addition, the base 5 includes a ventilation portion 53. In the curved receiving portion 50, a plurality of ventilation portions 53 are arranged at predetermined intervals between each other in the arrow-X direction and the arrow-Y direction, and are formed as an array of holes.

[0461] Furthermore, the base 5 is formed of an insulating material, or if the base 5 is conductive, an insulating film is formed at least on the inner wall of the ventilation portion 53 of the base 5.

[0462] An electrical conductor 58 is formed inside the ventilation portion 53 of the base 5. The electrical conductor 58 is formed of Cu, for example, Cu, which is formed as a film, for example, by plating.

[0463] Alternatively, the electrical conductor 58 can be formed by selectively attaching high-melting-point materials such as Sn, Ag, Cu, and Pb. In this case, one of the sides of the curved surface 50C or the rear surface 50B of the base 5 can be blocked with temporary material to prevent the electrical conductor 58 from leaking from the vent 53, and then the temporary material can be removed.

[0464] Furthermore, a flat temporary material comprising metal can be formed on the rear surface 50B of the base 5 at a position corresponding to the ventilation section 53, and an electrical conductor 58 can be selectively formed for the metal. For example, Cu treated by electroplating is used for the electrical conductor 58.

[0465] like Figure 42A and 42B As shown, the solid-state imaging element 2 is placed on the curved receiving portion 50 of the base 5.

[0466] like Figure 43A and Figure 43B As shown, the membrane 3 of the opening of the curved receiving portion 50 of the sealing base 5 is formed to cover the solid imaging element 2. The membrane 3 is formed of an organic material.

[0467] like Figure 44A and Figure 44BAs shown, the membrane 3 and the solid-state imaging element 2 are formed in a curved shape along the curved surface 50C of the curved receiving portion 50 of the base 5. Here, the interior of the curved receiving portion 50 is depressurized by the ventilation portion 53, and this pressure difference causes the membrane 3 and the solid-state imaging element 2 to be formed in a curved shape.

[0468] Furthermore, the step portion 56 is pre-formed in the base 5, and the end of the solid-state imaging element 2 and the step portion 56 are aligned with each other when formed into a curved shape. That is, the positioning of the solid-state imaging element 2 is performed in a self-aligning manner relative to the curved receiving portion 50 of the base 5. This allows the element terminal BP of the solid-state imaging element 2 to be electrically coupled to the electrical conductor 28 of the base 5.

[0469] The adhesive is then cured, and the membrane 3 and the solid-state imaging element 2 are fastened to the base 5.

[0470] Here, as Figure 45 As shown, the membrane 3 and the solid imaging element 2 can be shaped into a curved shape by the pressure difference caused by the pressurization of the gas from the nozzle 610.

[0471] like Figure 46 As shown, a mounting substrate 700 is prepared, and the solid-state imaging element 2 and the base 5 are positioned relative to the mounting substrate 700. An adhesive (not shown) is partially applied to at least one of the mounting substrate 700 or the solid-state imaging element 2. For example, a resin adhesive is used as the adhesive. After the mounting substrate 700 and the base 5 are attached to each other, the adhesive cures.

[0472] Subsequently, as Figure 47 As shown, the solid-state imaging element 2 is mounted on the mounting substrate 700. During mounting, one end of the electrical conductor 58 formed in the ventilation portion 53 of the base 5 is electrically coupled to the element terminal BP of the solid-state imaging element 2, and the other end of the electrical conductor 58 is electrically coupled to the mounting terminal 701 of the mounting substrate 700. This connection is made using an ultrasonic vibration method or a thermo-pressurized bonding method.

[0473] Considering the potential damage to blocking metals, it is preferable to connect one end of the electrical conductor 58 to the other end simultaneously.

[0474] In addition, the base 5 is securely fastened to the mounting base 700 using bottom filling material.

[0475] like Figure 48 As shown, membrane 3 is removed.

[0476] like Figure 49 As shown, an actuator 212, including an infrared cutoff filter 215, and a lens assembly 210 are attached to a spacer (not shown).

[0477] When a series of steps are completed, the imaging device 1 is finished.

[0478] [Fourth manufacturing method of imaging device 1]

[0479] refer to Figure 50A and Figures 50B to 57 A fourth manufacturing method for the imaging apparatus 1 according to the third embodiment is described. Figure 50A and Figures 50B to 57 Examples of steps describing the fourth manufacturing method are shown in both examples. The fourth manufacturing method is as follows.

[0480] First, such as Figure 50A and 50B As shown, a base 5 is formed. The base 5 includes a curved receiving portion 50. Furthermore, the base 5 includes ventilation portions 53. In most cases, within the curved receiving portion 50, a plurality of ventilation portions 53 are arranged at predetermined intervals between each other in the arrow-X and arrow-Y directions, and are formed as an array of holes. Alternatively, some ventilation portions 53 are simply formed as through holes for releasing gas.

[0481] Furthermore, the base 5 is formed of an insulating material, or if the base 5 is conductive, an insulating film is formed at least on the inner wall of the ventilation portion 53 of the base 5.

[0482] An electrical conductor 58 is formed inside the ventilation portion 53, which serves as the base 5, of which the hole array is formed. The electrical conductor 58 is formed, for example, of Cu, which is formed as a film, for example, by a plating process.

[0483] Alternatively, the electrical conductor 58 can be formed by selectively attaching high-melting-point materials such as Sn, Ag, Cu, and Pb. In this case, one of the sides of the curved surface 50C or the rear surface 50B of the base 5 is blocked with temporary material to prevent the electrical conductor 58 from leaking from the vent 53, and then the temporary material is removed.

[0484] Furthermore, a flat temporary material comprising metal can be formed on the rear surface 50B of the base 5 at a position corresponding to the ventilation section 53, and an electrical conductor 58 can be selectively formed for the metal. For example, Cu treated by electroplating is used for the electrical conductor 58.

[0485] No electrical conductor 58 is formed in the ventilation section 53 that is not used as a perforation array.

[0486] like Figure 51 A and 52B As shown, a membrane 3 forms the opening of the curved receiving portion 50 of the sealing base 5. The membrane 3 is formed of an organic material. Adhesive is applied to both surfaces of the membrane 3.

[0487] Here, in the fourth manufacturing method, the opening 3H is pre-formed in the membrane 3.

[0488] Meanwhile, the solid-state imaging element 2 is formed independently of the base 5. For example... Figure 52A andFigure 52B As shown, the solid-state imaging element 2 is adhered to the membrane 3. Element terminals BP or fine solder balls are formed on the rear surface 2B opposite to the light-receiving surface 2A of the solid-state imaging element 2. The solder balls are positioned within the opening 3H of the membrane 3; the solder balls are located within the opening 3H. The element terminals BP or fine solder balls protrude from the surface of the membrane 3 on the curved surface 50C side toward the curved surface 50C side.

[0489] like Figure 53A and Figure 53B As shown, the membrane 3 and the solid-state imaging element 2 are formed in a curved shape along the curved surface 50C of the curved receiving portion 50 of the base 5. Here, the interior of the curved receiving portion 50 is depressurized by the ventilation portion 53, and this pressure difference causes the membrane 3 and the solid-state imaging element 2 to be formed in a curved shape. This allows the end of the electrical conductor 58 on the solid-state imaging element 2 side to be electrically coupled to the element terminal BP of the solid-state imaging element 2.

[0490] Furthermore, the step portion 56 is pre-formed in the base 5, and the end of the solid-state imaging element 2 and the step portion 56 are aligned with each other when formed into a curved shape. That is, the positioning of the solid-state imaging element 2 is performed in a self-aligning manner relative to the curved receiving portion 50 of the base 5.

[0491] The adhesive is then cured, and the membrane 3 and the solid-state imaging element 2 are fastened to the base 5.

[0492] Here, as Figure 54 As shown, the membrane 3 and the solid imaging element 2 can be shaped into a curved shape by the pressure difference caused by the pressurization of the gas from the nozzle 610.

[0493] like Figure 55 As shown, a mounting substrate 700 is prepared, and the solid-state imaging element 2 and the base 5 are positioned relative to the mounting substrate 700. An adhesive (not shown) is partially applied to at least one of the mounting substrate 700 or the solid-state imaging element 2. For example, a resin adhesive is used as the adhesive. After the mounting substrate 700 and the base 5 are attached to each other, the adhesive cures.

[0494] Subsequently, as Figure 56 As shown, the solid-state imaging element 2 is mounted on the mounting substrate 700. During mounting, one end of the electrical conductor 58 formed in the ventilation portion 53 of the base 5 is electrically coupled to the element terminal BP of the solid-state imaging element 2, and the other end of the electrical conductor 58 is electrically coupled to the mounting terminal 701 of the mounting substrate 700. This connection is achieved using an ultrasonic vibration method or a thermo-pressurized bonding method.

[0495] Considering the potential damage to blocking metals, it is preferable to connect one end of the electrical conductor 58 to the other end simultaneously.

[0496] In addition, the base 5 is securely fastened to the mounting base 700 using bottom filling material.

[0497] like Figure 57 As shown, an actuator 212, including an infrared cutoff filter 215, and a lens assembly 210 are attached to a spacer (not shown).

[0498] When a series of steps are completed, the imaging device 1 is finished.

[0499] [Base 5 Configuration]

[0500] (1) First configuration of base 5

[0501] Figure 58A An example of a planar configuration of the base 5 of the imaging device 1 according to the third embodiment is shown. Figure 58B An example of the cross-sectional configuration of the base 5 is shown. The first configuration of the base 5 is an example of a previously manufactured electrical conductor 58.

[0502] like Figure 58A and Figure 58B As shown, the imaging device 1 includes a base 5. The base 5 includes a curved receiving portion 50. The curved surface 50C of the curved receiving portion 50 is formed along the image forming surface of the module lens (not shown).

[0503] The imaging device 1 configured as described above can reduce the corresponding load of image plane distortion when designing modular lenses. Furthermore, it can reduce the number of lenses in the modular lenses, reduce the height of the modular lenses, and achieve higher resolution for the modular lenses.

[0504] Furthermore, the curved receiving portion 50 of the base 5 can be formed into a curved surface shape in which the normal of the curved surface 50C is consistent with the CRA of the module lens.

[0505] Furthermore, based on the base 5 with this shape, even at high image heights, the main beam is incident vertically onto the solid-state imaging element 2, thereby effectively suppressing sensitivity loss caused by pixel vignetting of the solid-state imaging element 2 and image quality degradation such as tilted light mixing.

[0506] Furthermore, on the light-receiving surface 2A side of the solid-state imaging element 2, which is fixed in a curved shape to the curved receiving portion 50 of the base 5, the imaging device 1 may be provided with an infrared cutoff filter 215 formed in the same curved shape (see Figure 22 Therefore, eliminating the dependence of optical path difference in the infrared cutoff filter 215 on image height can effectively suppress or prevent saturation differences.

[0507] In the imaging apparatus 1, the solid-state imaging element 2 needs to be fixed to the bending receiving portion 50 of the base 5 without causing cracks. According to physical principles, the thinner Si substrate forming the base of the solid-state imaging element 2 is more easily bent. However, when the solid-state imaging element 2 is handled as a sample, the possibility of breakage is high.

[0508] Therefore, in practice, the thickness of the Si substrate is set to be in the range of 10 μm to 50 μm. Furthermore, the thickness of the Si substrate is preferably in the range of 15 μm to 35 μm.

[0509] (2) Material of base 5

[0510] The base 5 for bending installation is made of a material that takes into account the heat load during installation and the thermal changes in the market environment. In other words, the base 5 is made of a material that allows the coefficients of thermal expansion to be aligned as closely as possible without causing stress due to temperature changes on the solid-state imaging element 2.

[0511] For example, when a Si substrate is used for the solid-state imaging element 2, the base 5 is formed of Si. Si is optimal because it minimizes thermal stress. Without using Si, a substrate with a density close to 4.15 × 10⁻⁶ can be used. －6 The base 5 is formed from a material with a thermal expansion coefficient of Si of / ℃.

[0512] Furthermore, when selecting the material for the base 5, factors such as ease of processing, material cost, processing cost, base weight, rigidity, and base thinning were considered. Specific examples of materials that can be used practically for the base 5 include inorganic insulators, semiconductor materials, metallic materials, resin materials, and ceramic materials. In the imaging apparatus 1 according to the third embodiment, electrical conductors 58 are arranged, and therefore the base 5 is preferably formed of an insulating material.

[0513] Semiconductor materials include C, SiC, etc.

[0514] As a metallic material, one or more metals selected from Al, Cu, brass, and Ti, or alloys comprising one or more metals, can be used. Metallic materials have excellent heat dissipation properties.

[0515] Resin materials include acrylic, polystyrene, polycarbonate, and polypropylene. Resin materials are excellent in terms of cost reduction and weight reduction.

[0516] Ceramic materials include Al2O3, etc. While ceramic materials are expensive, they offer excellent durability and heat dissipation.

[0517] (3) Overall configuration of the bending accommodating part 50

[0518] In the base 5, the structure of the front surface of the bending receiving portion 50 is important. For example, the presence of protrusions on the bending surface of the bending receiving portion 50 causes stress to concentrate on the solid-state imaging element 2 with the protrusions as the origin, which makes the solid-state imaging element 2 prone to damage.

[0519] Even if the solid-state imaging element 2 is not damaged, the curved shape of the solid-state imaging element 2 is deformed due to the protrusion, and the amount of deformation deviates on the image forming surface of the module lens, resulting in resolution degradation.

[0520] Therefore, the front surface of the curved shape of the curved receiving portion 50 is formed as a smooth surface without protrusions.

[0521] The smooth surface can be formed using polishing, grinding, polishing and grinding, wheel machining, electrochemical polishing, etc. The front surface of the area of ​​the curved receiving portion 50 that contacts the solid-state imaging element 2 has a maximum roughness / height of at least 1 μm or less. Preferably, the maximum roughness / height is 0.5 μm or less; more preferably, the maximum roughness / height is 0.1 μm or less.

[0522] Here, the maximum height / roughness is based on the definition specified in the Japanese Industrial Standard or JIS B0601:2013.

[0523] (4) Configuration of ventilation section 53

[0524] The base 5 includes a ventilation section 53 in the bending housing 50, extending from the bending surface 50C to the rear surface 50B opposite to the bending surface. When the solid-state imaging element 2 is bent by a pressure difference between gases (such as air), the ventilation section 53 allows air to pass through the solid-state imaging element 2, the membrane 3 (see...) Figure 22 The ventilation section 53 is used to exhaust gas from the interior of the space enclosed by the curved receiving portion 50 of the base 5 to the exterior of the base 5. That is, when the solid-state imaging element 2 and the membrane 3 are mounted on the base 5 in a curved shape using a pressure difference, the ventilation section 53 is used.

[0525] Ventilation section 53 is formed by through holes. Embedded member 54, such as a porous material (see...) Figure 13 (A) and (B) can be embedded in the ventilation section 53.

[0526] An electrical conductor 58 is disposed in the ventilation section 53, which also serves as the aperture array. One end of the electrical conductor 58 is electrically coupled to the element terminal BP of the solid-state imaging element 2, and the other end of the electrical conductor 58 is electrically coupled to the mounting terminal 701 of the mounting substrate 700 (see [link]). Figure 22 ).

[0527] The electrical conductor 58 is formed of Cu, for example. Cu is formed into a film, for example, by electroplating.

[0528] Alternatively, the electrical conductor 58 can be formed by selectively attaching high-melting-point materials such as Sn, Ag, Cu, and Pb. In this case, one of the sides of the curved surface 50C or the rear surface 50B of the base 5 is blocked with temporary material to prevent the electrical conductor 58 from leaking from the vent 53, and then the temporary material is removed.

[0529] Furthermore, a flat temporary material comprising metal can be formed on the rear surface 50B of the base 5 at a position corresponding to the ventilation section 53, and an electrical conductor 58 can be selectively formed for the metal. For example, Cu treated by electroplating is used for the electrical conductor 58.

[0530] The first configuration of base 5 involves an electrical conductor.

[0531] (5) Second configuration of base 5

[0532] Figure 59A An example of the planar configuration of the base 5 of the imaging device 1 according to the third embodiment is shown. Figure 59B An example of the cross-sectional configuration of base 5 is shown. A second configuration of base 5 is an example of the subsequent fabrication of electrical conductor 58.

[0533] like Figure 59A and Figure 59B As shown, the base 5 includes a ventilation section 53. Most of the ventilation section 53 also serves as an array of holes. During manufacturing, an electrical conductor 58 is embedded in the ventilation section 53.

[0534] Apart from the components mentioned above, the components are the same as or substantially the same as the components of the first configuration of the base 5.

[0535] (6) The third configuration and manufacturing method of base 5

[0536] Figure 60 An example is shown illustrating the steps of a manufacturing method in which the solid-state imaging element 2 is mounted on a curved receiving portion 50 of the base 5. Figure 60 (A) shows an example of the planar configuration of the base 5 before installation. Figure 60 (B) shows an example of the cross-sectional configuration of the base 5 before installation. Figure 60 (C) shows an example of the cross-sectional configuration when the solid-state imaging element 2 is placed on the curved receiving portion 50 of the base 5. Figure 60 (D) shows an example of a cross-sectional configuration of an imaging device 1 in which the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5.

[0537] First, such as Figure 60As shown in (A) and (B), a base 5 is formed. The base 5 includes a curved receiving portion 50. A pouch-like portion 55 is formed around the middle portion near the center of the front surface 50A of the base 5. In the side view, the pouch-like portion 55 is formed as a groove shape that is further recessed from the front surface of the curved receiving portion 50 in the incident direction of the incident light L. In addition, the pouch-like portion 55 is formed as an annular shape when viewed from above, but is not particularly limited thereto. The pouch-like portion 55 absorbs excess portions of the adhesive 51 formed in the curved housing portion 50 to effectively suppress or prevent the adhesive 51 from overflowing between the curved housing portion 50 and the solid-state imaging element 2.

[0538] Simultaneously, a solid-state imaging element 2 is formed.

[0539] like Figure 60 As shown in (C), adhesive 51 is formed in the curved receiving portion 50 of the base 5, and solid-state imaging element 2 is placed on the curved receiving portion 50.

[0540] For example, the aforementioned pressure difference is generated, and the solid-state imaging element 2 is formed in a curved shape along the curved shape of the curved receiving portion 50, such as... Figure 60 As shown in (D). Adhesive 51 allows the solid-state imaging element 2 to adhere to the interior of the curved receiving portion 50 to form an imaging device 1 in which the solid-state imaging element 2 is mounted on the base 5.

[0541] It should be noted that the position of the bag-shaped part 55 is changed as described above (see Figure 15).

[0542] (7) The fourth configuration of base 5

[0543] Figure 61 This is a diagram illustrating the fourth configuration of base 5. Figure 61 (A) shows an example of the cross-sectional configuration of the base 5 and the solid-state imaging element 2 before installation. Figure 61 (B) shows an example of an enlarged cross-sectional configuration of the main parts of the base 5 and the solid-state imaging element 2.

[0544] like Figure 61 As shown in (A) and (B), a step portion 56 is formed in the curved receiving portion 50 of the base 5. The step portion 56 is formed as a positioning guide that is adjacent to the peripheral end of the solid-state imaging element 2 placed in the curved receiving portion 50 to perform positioning of the solid-state imaging element 2 relative to the curved receiving portion 50.

[0545] According to the base 5 configured as described above, the positioning of the solid-state imaging element 2 on the curved receiving portion 50 can be easily and accurately performed by using the stepped portion 56.

[0546] (8) The fifth configuration of base 5

[0547] Figure 62 An example of a planar configuration describing the fifth configuration of base 5 is shown.

[0548] like Figure 62 As shown, a mark 57 is formed in the peripheral portion of the front surface 50A of the base 5. The mark 57 is formed as an alignment mark to perform positioning of the curved receiving portion 50 of the base 5 and the solid-state imaging element 2. For example, the mark 57 is positioned relative to the contour shape of the solid-state imaging element 2.

[0549] According to the base 5 configured as described above, the use of marker 57 makes it easy and accurate to position the solid-state imaging element 2 on the curved receiving portion 50.

[0550] It should be noted that in the base 5, the aforementioned ventilation portion 53, bag-shaped portion 55, or stepped portion 56 that contacts the solid-state imaging element 2 has a rounded corner shape, wherein the corner portion has rounded corners. In the area with a rounded shape, stress concentration that occurs in the solid-state imaging element 2, which is formed in a curved shape and subjected to stress, can be effectively suppressed or prevented.

[0551] [Configuration of component terminal BP, conductor 58, and mounting terminal 701]

[0552] Next, the corresponding coupling configurations of the element terminal BP of the solid-state imaging element 2, the electrical conductor 58 of the base 5, and the mounting terminal 701 of the mounting substrate 700 are as follows.

[0553] (1) First coupling configuration

[0554] Figures 63A to 63D An example of the first coupling configuration of the imaging device 1 is shown. Figure 63A An example of the cross-sectional configuration of the solid-state imaging element 2 is shown. Figure 63B An example of a planar configuration of base 5 is shown. Figure 63C An example of the cross-sectional configuration of base 5 is shown. Figure 63D An example of the cross-sectional configuration of the mounting substrate 700 is shown.

[0555] like Figure 63A As shown, in the solid-state imaging element 2 of the imaging device 1, the element terminal BP is formed in a flat shape.

[0556] like Figure 63B and Figure 63C As shown, one end of the electrical conductor 28 of the base 5 corresponds to the component terminal BP and is formed in a flat shape. Meanwhile, the other end of the electrical conductor 28 protrudes from the rear surface 50B of the base 5 and is formed in a pin shape (convex shape).

[0557] like Figure 63DAs shown, the mounting terminal 701 of the mounting substrate 700 is recessed from the surface of the base material 710 and is formed into a socket shape (recessed shape) into which the other end of the electrical conductor 28 is inserted.

[0558] The pin shape can be a hanging bell shape, a slender rod shape for pin grid array (PGA), or an insert shape for dual in-line package (DIL).

[0559] As for the shape of the socket, it is sufficient for the base material 710 to include electrodes and have an opening on its surface, into which the other end of the electrical conductor 28 is inserted.

[0560] According to the imaging device 1 configured as described above, electrical coupling and positioning can be easily, quickly, and with high precision between the mounting terminal 701 and the electrical conductor 28. That is, an imaging device 1 can be provided that enables easy, quick, and high-precision installation operations.

[0561] (2) Second coupling configuration

[0562] Figures 64A to 64C An example of a second coupling configuration of imaging device 1 is shown. Figure 64A An example of the cross-sectional configuration of the solid-state imaging element 2 is shown. Figure 64B An example of a planar configuration of base 5 is shown. Figure 64C An example of the cross-sectional configuration of the base 5 is shown. The cross-sectional configuration of the mounting base 700 is similar to that of the base 5. Figure 63D The cross-sectional configuration of the mounting substrate 700 shown is the same.

[0563] like Figure 64A As shown, in the solid-state imaging element 2 of the imaging device 1, the element terminal BP is formed in a socket shape.

[0564] like Figure 64B and Figure 64C As shown, one end of the conductor 28 of the base 5 corresponds to the component terminal BP and protrudes from the curved surface 50C, forming a pin shape. Meanwhile, the other end of the conductor 28 protrudes from the rear surface 50B of the base 5 and is also formed a pin shape.

[0565] As mentioned above Figure 63D As shown, the mounting terminal 701 of the mounting substrate 700 is formed in the shape of a socket.

[0566] According to the imaging device 1 configured as described above, the electrical coupling and positioning between the element terminal BP and the electrical conductor 28, as well as the electrical coupling and positioning between the mounting terminal 701 and the electrical conductor 28, can be easily, quickly and with high precision performed.

[0567] (3) Third coupling configuration

[0568] Figures 65A to 65D An example of the third coupling configuration of the imaging device 1 is shown. Figure 65A An example of the cross-sectional configuration of the solid-state imaging element 2 is shown. Figure 65B An example of a planar configuration of base 5 is shown. Figure 65C An example of the cross-sectional configuration of base 5 is shown. Figure 65D An example of the cross-sectional configuration of the mounting substrate 700 is shown.

[0569] like Figure 65A As shown, in the solid-state imaging element 2 of the imaging device 1, the element terminal BP is formed in the shape of a socket.

[0570] like Figure 65B and Figure 65C As shown, one end of the conductor 28 of the base 5 corresponds to the element terminal BP and protrudes from the curved surface 50C and is formed in a flat shape. On the other hand, the other end of the conductor 28 is formed in a flat plate shape.

[0571] like Figure 65D As shown, the mounting terminals 701 of the mounting substrate 700 are formed in a flat shape.

[0572] According to the imaging device 1 configured as described above, electrical coupling and positioning between the element terminal BP and the electrical conductor 28 can be easily, quickly and with high precision.

[0573] (4) Fourth coupling configuration

[0574] Figures 66A to 66C An example illustrating the second coupling configuration of imaging device 1. Figure 66A An example of the cross-sectional configuration of the solid-state imaging element 2 is shown. Figure 66B An example of a planar configuration of base 5 is shown. Figure 66C An example of the cross-sectional configuration of the base 5 is shown. The cross-sectional configuration of the mounting substrate 700 is similar to that in... Figure 65D The cross-sectional configuration of the mounting substrate 700 shown is the same.

[0575] like Figure 66A As shown, in the solid-state imaging element 2 of the imaging device 1, the element terminal BP is formed in the shape of a pin.

[0576] like Figure 66B and Figure 66C As shown, one end of the electrical conductor 28 of the base 5 corresponds to the component terminal BP, and is recessed from the curved surface 50C into one side of the rear surface 50B and formed into a socket shape. On the other hand, the other end of the electrical conductor 28 is formed into a flat plate shape.

[0577] As mentioned above Figure 63DAs shown, the mounting terminals 701 of the mounting substrate 700 are formed in a flat shape.

[0578] According to the imaging device 1 configured as described above, electrical coupling and positioning between the element terminal BP and the electrical conductor 28 can be easily, quickly and with high precision.

[0579] (5) Fifth coupling configuration

[0580] Figures 67A to 67D An example of the fifth coupling configuration of the imaging device 1 is shown. Figure 67A An example of the cross-sectional configuration of the solid-state imaging element 2 is shown. Figure 67B An example of a planar configuration of base 5 is shown. Figure 67C An example of the cross-sectional configuration of base 5 is shown. Figure 67D An example of the cross-sectional configuration of the mounting substrate 700 is shown.

[0581] like Figure 67A As shown, in the solid-state imaging element 2 of the imaging device 1, the element terminal BP is formed in a flat shape.

[0582] like Figure 67B and Figure 67C As shown, one end of the electrical conductor 28 of the base 5 corresponds to the component terminal BP and is formed in a flat shape. Meanwhile, the other end of the electrical conductor 28 is recessed from the rear surface 50B of the base 5 toward the curved surface 50C and is formed in a socket shape.

[0583] like Figure 67D As shown, the mounting terminal 701 of the mounting substrate 700 protrudes from the surface of the base material 710 and is formed in a needle shape that allows insertion into the other end of the electrical conductor 28.

[0584] According to the imaging device 1 configured as described above, electrical coupling and positioning can be easily, quickly and with high precision performed between the mounting terminal 701 and the electrical conductor 28.

[0585] (6) Sixth Coupling Configuration

[0586] Figures 68A to 68C An example of a second coupling configuration of imaging device 1 is shown. Figure 68A An example of the cross-sectional configuration of the solid-state imaging element 2 is shown. Figure 68B An example of a planar configuration of base 5 is shown. Figure 68C An example of the cross-sectional configuration of the base 5 is shown. The cross-sectional configuration of the mounting base 700 is similar to that of the base 5. Figure 67D The cross-sectional configuration of the mounting substrate 700 shown is the same.

[0587] like Figure 68AAs shown, in the solid-state imaging element 2 of the imaging device 1, the element terminal BP is formed as a pin.

[0588] like Figure 68B and Figure 68C As shown, one end of the electrical conductor 28 of the base 5 corresponds to the component terminal BP and is recessed from the curved surface 50C into one side of the rear surface 50B, forming a socket shape. On the other hand, the other end of the electrical conductor 28 is recessed from the rear surface 50B into the curved surface 50C, forming a socket shape.

[0589] As mentioned above Figure 67D As shown, the mounting terminal 701 of the mounting substrate 700 is formed in the shape of a pin.

[0590] According to the imaging device 1 configured as described above, the electrical coupling and positioning between the element terminal BP and the electrical conductor 28, as well as the electrical coupling and positioning between the electrical conductor 28 and the mounting terminal 701, can be easily, quickly and with high precision.

[0591] <4. Fourth Implementation Method>

[0592] Reference Figure 69 and Figure 70 The present disclosure describes an imaging apparatus 1 according to a fourth embodiment and a method for manufacturing the imaging apparatus 1.

[0593] [First configuration of imaging device 1]

[0594] Figure 69 An example of the cross-sectional configuration of the imaging apparatus 1 according to the fourth embodiment is shown. The fourth embodiment is a practical application example of the imaging apparatus 1 according to the third embodiment.

[0595] like Figure 69 As shown, the imaging device 1 includes an element section 100 and an optical section 200 in the same manner as the imaging device 1 according to the third embodiment. Furthermore, the element section 100 includes a solid-state imaging element 2, a film 3, a base 5, an intermediate wiring substrate 750 mounted on the base 5, and a mounting substrate 700 to be mounted on the base 5.

[0596] (1) Arrangement of component section 100

[0597] The solid-state imaging element 2 is configured, for example, by a CSP structure that pulls the element terminal BP out from directly below the rear surface. The solid-state imaging element 2 employs a BGA structure or a Cu-LGA structure.

[0598] The imaging device 1 configured as described above does not use wiring 9 (see... Figure 8 The coupling of the solid-state imaging element 2 is such that the wiring 9 is not guided around the outside of the solid-state imaging element 2. This allows for a reduction in the size of the solid-state imaging element 2 because the wiring 9 is not guided around the outside of the solid-state imaging element 2.

[0599] Furthermore, the reduced wiring length when coupling the solid-state imaging element 2 and the mounting substrate 700 together enables a higher operating speed for the imaging device 1.

[0600] Infrared cutoff filter 215 (see) Figure 22 The infrared cutoff filter 215 is arranged on the light-receiving surface 2A side of the solid-state imaging element 2. It is a multilayer film type with absorption type, stacked dielectric films with different refractive indices, or a hybrid type that combines absorption type and multilayer film type.

[0601] Therefore, eliminating the dependence of optical path difference in the infrared absorption filter 215 on image height can effectively suppress or prevent saturation.

[0602] In addition, the number of components for the infrared cut-off filter on the lens side of the module can be reduced.

[0603] Furthermore, the solid-state imaging element 2 having the above-described CSP structure can be a stacked solid-state imaging element to which a logic substrate is attached. In this case, the thickness of the solid-state imaging element 2 increases; however, the area of ​​the peripheral circuitry disposed around the light-receiving surface 2A in the solid-state imaging element 2 can be reduced.

[0604] The solid-state imaging element 2, configured as described above, can increase the number of times it is obtained from the semiconductor wafer during the manufacturing process. Furthermore, large-scale circuitry with added value can be assigned to the logic substrate side.

[0605] (2) Configuration of intermediate wiring board 750

[0606] The intermediate wiring substrate 750 is disposed in the middle portion of the base 5 along the thickness direction (arrow -Z direction). The intermediate wiring substrate 750 is formed of, for example, one or more substrates selected from organic resin substrates, ceramic substrates, and glass substrates used in liquid crystal displays. The intermediate wiring substrate 750 is provided with single-layer or multi-layer wiring, not shown.

[0607] The solid-state imaging element 2 is electrically coupled to the mounting substrate 700 via the intermediate wiring substrate 750. As will be described in detail, the element terminal BP of the solid-state imaging element 2 is electrically coupled to the intermediate wiring substrate 750 via the electrical conductor 28A of the electrical conductor 28 of the base 5. Furthermore, the intermediate wiring substrate 750 is electrically coupled to the mounting terminal 701 of the mounting substrate 700 via the electrical conductor 28B of the electrical conductor 28 of the base 5.

[0608] The electrical conductor 28 is formed using the manufacturing method of the imaging device 1 according to the third embodiment described above. The intermediate wiring substrate 750 is bonded to the base 5 using adhesive and is electrically coupled to the electrical conductor 28.

[0609] Here, one or more resin adhesives selected from epoxy resins, acrylic resins, and blue-green resins are used as the adhesive. UV-curable, temperature-curable, and time-curable types can be used as the adhesive, and there are no particular limitations on the curing type.

[0610] When a UV-curable adhesive is used, the base 5 is formed of a UV-transmitting material.

[0611] Furthermore, the electrical conductor 28 can be formed by bonding a high-melting-point material. High-melting-point materials can include Sn, Ag, Cu, Pb, etc.

[0612] Furthermore, the electrical conductor 28 may be formed on the arranged metal. As the electrical conductor 28, Cu formed on the metal by electroplating is used.

[0613] Furthermore, the electrical conductor 28 can be formed of conductive resin. Additionally, ultrasonic vibration or thermoforming methods can be used for electrical coupling.

[0614] Furthermore, for the coupling between the intermediate wiring substrate 750 and the electrical conductor 28, the first to sixth coupling configurations described for the imaging apparatus 1 according to the third embodiment described above can be used. With this configuration, the installation operation can be easily, quickly, and with high precision.

[0615] Furthermore, the use of a bottom filler material for the bonding between the base 5 and the intermediate wiring substrate 750 enables a secure bonding process.

[0616] [Work and Results]

[0617] According to the imaging device 1 configured as described above, the intermediate wiring board 750 is arranged in the base 5, thereby increasing the design freedom of the terminal layout (changing connections, etc.).

[0618] Furthermore, allocating a portion of the mounting substrate 700 to the intermediate wiring substrate 750 of the base 5 allows for a reduction in the circuit size of the mounting substrate 700. Therefore, the manufacturing cost of the imaging device 1 can be effectively reduced.

[0619] Furthermore, the mounting substrate 700 and the intermediate wiring substrate 750 are configured to have a two-layer substrate structure, thereby enabling a reduction in the size and space of the imaging device 1.

[0620] Furthermore, the logic circuitry of the solid-state imaging element 2 can be distributed to the intermediate wiring substrate 750, thereby enabling a reduction in circuit size.

[0621] [Second configuration of imaging device 1]

[0622] Figure 70An example of the cross-sectional configuration of the imaging apparatus 1 according to the fourth embodiment is shown.

[0623] like Figure 70 As shown, in the imaging device 1 according to the first configuration, the imaging device 1 is provided with an electrical conductor 28C that penetrates the intermediate wiring substrate 750 in the base 5.

[0624] Apart from those mentioned above, the components are the same as or substantially the same as those of the imaging device 1 according to the first configuration.

[0625] It should be noted that in the imaging device 1, the intermediate wiring substrate 750 can be disposed between the base 5 and the mounting substrate 700.

[0626] <5. Fifth Implementation Method>

[0627] Reference Figure 71 and Figure 72 The imaging apparatus 1 according to the fifth embodiment of the present disclosure and the method of manufacturing the imaging apparatus 1 are described.

[0628] [First configuration of imaging device 1]

[0629] Figure 71 An example of the cross-sectional configuration of the imaging apparatus 1 according to the fifth embodiment is shown. The fourth embodiment is a practical application example of the imaging apparatus 1 according to the third embodiment.

[0630] like Figure 71 As shown, the imaging device 1 includes an element section 100 and an optical section 200 in the same manner as the imaging device 1 according to the third embodiment. Furthermore, the element section 100 includes a solid-state imaging element 2, a film 3, a base 5, a mounting substrate 700, and a logic chip 760 disposed between the base 5 and the mounting substrate 700.

[0631] (1) Arrangement of component section 100

[0632] The solid-state imaging element 2 is configured, for example, by a CSP structure that pulls the element terminal BP out from directly below the rear surface. The solid-state imaging element 2 employs a BGA structure or a Cu-LGA structure.

[0633] The imaging device 1 configured as described above does not use wiring 9 (see... Figure 8 The coupling of the solid-state imaging element 2 is such that the wiring 9 is not guided around the outside of the solid-state imaging element 2. This allows for a reduction in the size of the solid-state imaging element 2 because the wiring 9 is not guided around the outside of the solid-state imaging element 2.

[0634] Furthermore, the reduced wiring length when coupling the solid-state imaging element 2 and the mounting substrate 700 together enables a higher operating speed for the imaging device 1.

[0635] The imaging device 1 includes a base 5, which includes a curved receiving portion 50. The curved surface 50C of the curved receiving portion 50 is formed along the image forming surface of the module lens (not shown).

[0636] The imaging device 1 configured as described above can reduce the corresponding load of image plane distortion when designing modular lenses. Furthermore, it can reduce the number of lenses in the modular lenses, reduce the height of the modular lenses, and achieve higher resolution for the modular lenses.

[0637] Furthermore, the curved receiving portion 50 of the base 5 can be formed into a curved surface shape in which the normal of the curved surface 50C is consistent with the CRA of the module lens.

[0638] Furthermore, based on the base 5 with this shape, even at high image heights, the main beam is incident vertically onto the solid-state imaging element 2, thereby effectively suppressing sensitivity loss caused by pixel vignetting of the solid-state imaging element 2 and image quality degradation such as tilted light mixing.

[0639] The base 5 includes a ventilation section 53 in the bending housing 50 that extends from the bending surface 50C to the rear surface 50B side opposite to the bending surface 50C. When the solid-state imaging element 2 bends due to the pressure difference between gases (such as air), the ventilation section 53 can exhaust the gas from the interior of the space enclosed by the bending housing 50 of the solid-state imaging element 2, the membrane 3, and the base 5 to the exterior of the base 5.

[0640] Ventilation section 53 is formed by through holes. Embedded member 54, such as a porous material (see...) Figure 13 (A) and (B) can be embedded in the ventilation section 53.

[0641] Furthermore, the ventilation section 53 of the base 5 serves, for example, as a gas vent during the manufacturing process, and multiple ventilation sections 53 are arranged and also serve as an array of holes. An electrical conductor 58 is embedded in the ventilation section 53, which also serves as an array of holes. One end of the electrical conductor 58 is electrically coupled to the solid-state imaging element 2, and the other end of the electrical conductor 58 is electrically coupled to the mounting substrate 700.

[0642] (2) Configuration of logic chip 760

[0643] The logic chip 760 is disposed on the side of the rear surface 50B of the base 5 between the base 5 and the mounting substrate 700. The coupling structure between the base 5 and the logic chip 760 adopts a structure similar to a BGA structure or a Cu-LGA structure. Ultrasonic vibration or thermoforming is used for connection. Alternatively, plasma bonding technology can be used to achieve a robust coupling.

[0644] The coupling structure between the logic chip 760 and the mounting substrate 700 adopts a structure similar to that of a BGA or Cu-LGA. Ultrasonic vibration or thermoforming bonding methods are used for connection. Alternatively, plasma bonding technology can achieve a robust coupling.

[0645] The mounting substrate 700 is equipped with semiconductor components, such as LSI (large-scale integrated circuits), capacitors, resistors, and autofocus drivers to drive actuator 212, and is equipped with electronic components 720, such as connectors, to output imaging signals from solid-state imaging element 2 to external devices.

[0646] [Work and Results]

[0647] According to the imaging apparatus 1 configured as described above, the logic chip 760 allows for a reduction in the area of ​​the peripheral circuitry disposed around the light-receiving surface 2A in the solid-state imaging element 2 without increasing the thickness of the solid-state imaging element 2. Therefore, the number of times the solid-state imaging element 2 is obtained from the semiconductor wafer during manufacturing can be increased. Furthermore, large-scale circuitry with added value can be allocated to one side of the logic chip 760.

[0648] [Second configuration of imaging device 1]

[0649] Figure 72 An example of the cross-sectional configuration of the imaging apparatus 1 according to the fifth embodiment is shown.

[0650] like Figure 72 As shown, in the imaging device 1 according to the first configuration, the imaging device 1 is provided with a logic chip 760 and a mounting substrate 700 electrically coupled to each other via wiring 9.

[0651] Apart from those mentioned above, the components are the same as or substantially the same as those of the imaging device 1 according to the first configuration.

[0652] It should be noted that in this disclosure, the imaging device 1 according to the first configuration and the imaging device 1 according to the second configuration can be combined with each other.

[0653] <6. Other Implementation Methods>

[0654] This disclosure is not limited to the embodiments described above. For example, in this disclosure, two or more corresponding examples described for imaging devices and the method of manufacturing an imaging device according to the embodiments described above can be combined.

[0655] An imaging apparatus according to a first embodiment of the present disclosure includes a solid-state imaging element and a base. The solid-state imaging element includes a light-receiving surface on the base, and a plurality of pixels are arranged in a two-dimensional array on the light-receiving surface. Each pixel includes a photoelectric conversion region that converts incident light into an electrical signal. The base is provided with a curved surface that is recessed in the incident direction of the incident light. The base includes a curved receiving portion for accommodating the solid-state imaging element. In this imaging apparatus, the light-receiving surface and the curved surface face each other, and the solid-state imaging element is disposed in a curved state on the curved receiving portion.

[0656] According to the imaging device configured as described above, the light-receiving surface of the solid-state imaging element is not damaged.

[0657] In the imaging apparatus according to the second embodiment of the present disclosure, in the imaging apparatus according to the first embodiment, a membrane is disposed between the solid imaging element and the bending receiving portion.

[0658] According to the imaging device configured as described above, the light-receiving surface and the film of the solid-state imaging element do not contact each other.

[0659] An imaging apparatus according to a third embodiment of the present disclosure includes a mounting substrate mounted on one side of a rear surface opposite to a curved surface by means of a base. In an imaging apparatus according to a first embodiment, the base includes an electrical conductor, one end of which is electrically coupled to a solid-state imaging element in a curved receiving portion, and the other end of which is electrically coupled to the mounting substrate.

[0660] The manufacturing cost can be effectively reduced by configuring the imaging device as described above.

[0661] The imaging apparatus according to the fourth embodiment of the present disclosure further includes a wiring substrate between the solid-state imaging element and the bending receiving portion of the base in the imaging apparatus according to the first embodiment. The wiring substrate includes a wiring layer and is formed in a bending shape along the bending surface of the bending receiving portion.

[0662] The manufacturing cost can be effectively reduced by configuring the imaging device as described above.

[0663] A method for manufacturing an imaging device according to a fifth embodiment of this disclosure includes: forming a solid-state imaging element, the solid-state imaging element including a light-receiving surface on a base, a plurality of pixels arranged in a two-dimensional array on the light-receiving surface, each of the pixels including a photoelectric conversion region for converting incident light into an electrical signal; forming a base, the base having a curved surface recessed in the incident direction of the incident light, the base including a curved receiving portion for accommodating the solid-state imaging element; making the light-receiving surface and the curved surface face each other; and forming the solid-state imaging element in a curved state on the curved receiving portion, wherein a film is interposed between the solid-state imaging element and the curved receiving portion.

[0664] According to the manufacturing method of the imaging device configured as described above, the light-receiving surface of the solid-state imaging element is not damaged.

[0665] <Configuration of this disclosure>

[0666] This disclosure includes the following configuration. The following configuration is provided to enable an imaging apparatus and a method for manufacturing the imaging apparatus without damaging the light-receiving surface of a solid-state imaging element. (1)

[0668] An imaging device, comprising:

[0669] A solid-state imaging element includes a light-receiving surface on a substrate, on which multiple pixels are arranged in a two-dimensional array. Each pixel includes a photoelectric conversion region that converts incident light into an electrical signal.

[0670] The base has a curved surface that is recessed in the incident direction of the incident light. The base includes a curved receiving portion for accommodating a solid-state imaging element, wherein...

[0671] The rear surface of the base, which is opposite to the light-receiving surface, and the curved surface face each other, and

[0672] The solid-state imaging element is arranged in a curved state on the curved receiving part. (2)

[0674] According to the imaging device of (1), a membrane is arranged between the solid imaging element and the curved receiving portion. (3)

[0676] According to the imaging device of (2), the film is softer than the solid imaging element. (4)

[0678] According to the imaging apparatus of (2) or (3), an adhesive is formed on the surface of a film on one side of a solid imaging element and on the surface of a film on one side of a curved surface. (5)

[0680] An imaging apparatus according to any one of (1) to (4), wherein the base includes a ventilation portion in a curved receiving portion that penetrates from the curved surface toward a side of the rear surface opposite to the curved surface. (6)

[0682] An imaging apparatus according to any one of (1) to (4) includes a mounting base, the mounting base being mounted on the side of the rear surface opposite the curved surface, wherein,

[0683] The base includes an electrical conductor having one end and another end, one end being electrically coupled to a solid-state imaging element in a bending housing, and the other end being electrically coupled to a mounting substrate. (7)

[0685] The imaging apparatus according to (6) includes a membrane disposed between a solid imaging element and a curved receiving portion, the membrane having an opening at a position corresponding to an electrical conductor, the opening allowing electrical coupling between the solid imaging element and the electrical conductor. (8)

[0687] The imaging apparatus according to (7) includes element terminals arranged at positions corresponding to openings in a film on the rear surface of a base opposite to the light-receiving surface of a solid-state imaging element. The element terminals allow electrical coupling between the solid-state imaging element and an electrical conductor. (9)

[0689] According to the imaging device of (8), the element terminals protrude from the surface of the membrane on one side of the curved surface. (10)

[0691] According to the imaging device of (8), wherein,

[0692] The electrical conductor protrudes from the curved surface to one side of the membrane, and

[0693] The element terminals are recessed from one side of the film on the curved surface into one side of the solid-state imaging element. (11)

[0695] According to the imaging device of (8), wherein,

[0696] The electrical conductor is recessed from the curved surface into one side of the mounting substrate, and

[0697] The component terminals protrude from one side of the membrane onto the other side of the curved surface. (12)

[0699] According to the imaging apparatus of (8), (10) or (11), wherein,

[0700] The mounting substrate includes mounting terminals at positions corresponding to the electrical conductors, and the mounting terminals are electrically coupled to the electrical conductors.

[0701] The electrical conductor protrudes from the rear surface of the base to one side of the mounting plate, and

[0702] The mounting terminals are recessed from one side of the mounting substrate onto the rear surface of the mounting substrate. (13)

[0704] According to the imaging apparatus of (8), (10) or (11), wherein

[0705] The mounting substrate includes mounting terminals at positions corresponding to the electrical conductors, and the mounting terminals are electrically coupled to the electrical conductors.

[0706] The electrical conductor is recessed from the rear surface of the base into one side of the curved surface, and

[0707] The mounting terminals protrude from the surface of the mounting plate on one side of the base to the other side of the base. (14)

[0709] The imaging apparatus according to any one of (1) to (13) further includes a wiring substrate between the solid-state imaging element and the curved receiving portion of the base, the wiring substrate including a wiring layer and formed into a curved shape along the curved surface of the curved receiving portion. (15)

[0711] According to the imaging device of (14), wherein,

[0712] The wiring base is flexible.

[0713] A portion of the wiring substrate extends to the periphery of the side surface of the base, and

[0714] Electronic components are mounted on a portion of the wiring board. (16)

[0716] According to the imaging apparatus of (14) or (15), the wiring substrate includes multiple wiring layers. (17)

[0718] A method for manufacturing an imaging device, the method comprising:

[0719] A solid-state imaging element is formed, which includes a light-receiving surface on a base. Multiple pixels are arranged in a two-dimensional array on the light-receiving surface, and each pixel includes a photoelectric conversion region that converts incident light into an electrical signal.

[0720] A base is formed, the base having a curved surface that is recessed in the incident direction of the incident light, and the base includes a curved receiving portion for accommodating a solid-state imaging element;

[0721] The rear surface of the base, which is opposite to the light-receiving surface, and the curved surface face each other; and

[0722] A solid-state imaging element is formed in a curved state on a curved receiving portion, wherein a film is located between the solid-state imaging element and the curved receiving portion.

[0723] This application claims the benefit of U.S. Provisional Patent Application No. 63 / 456151, filed with the U.S. Patent and Trademark Office on March 31, 2023, the entire contents of which are incorporated herein by reference.

[0724] Those skilled in the art will understand that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors, as long as they are within the scope of the appended claims or their equivalents.

Claims

1. An imaging device, comprising: A solid-state imaging element includes a light-receiving surface on a substrate, on which a plurality of pixels are arranged in a two-dimensional array, each pixel including a photoelectric conversion region that converts incident light into an electrical signal; and The base has a curved surface that is recessed in the incident direction of the incident light, and the base includes a curved receiving portion for accommodating the solid-state imaging element, wherein... The rear surface of the base, which is opposite to the light-receiving surface, and the curved surface face each other, and The solid-state imaging element is arranged in a bent state on the bent receiving portion.

2. The imaging device according to claim 1, wherein, The membrane is disposed between the solid-state imaging element and the curved receiving portion.

3. The imaging device according to claim 2, wherein, The film is softer than the solid-state imaging element.

4. The imaging device according to claim 2, wherein, An adhesive is formed on the surface of the film on one side of the solid-state imaging element and on the surface of the film on one side of the curved surface.

5. The imaging apparatus according to claim 1, wherein, The base includes a ventilation portion in the curved receiving portion, the ventilation portion penetrating from the curved surface toward a rear surface opposite the curved surface.

6. The imaging apparatus of claim 1, further comprising a mounting base having the base, the mounting base being mounted on the rear surface opposite the curved surface, wherein, The base includes an electrical conductor having one end and another end, the one end being electrically coupled to the solid-state imaging element in the bending housing, and the other end being electrically coupled to the mounting substrate.

7. The imaging apparatus of claim 6, comprising a membrane disposed between the solid-state imaging element and the curved receiving portion, the membrane having an opening at a location corresponding to the electrical conductor, the opening allowing electrical coupling between the solid-state imaging element and the electrical conductor.

8. The imaging apparatus of claim 7, further comprising a component terminal disposed on a rear surface of the base opposite the light-receiving surface of the solid-state imaging element at a location corresponding to the opening of the film, the component terminal allowing electrical coupling between the solid-state imaging element and the electrical conductor.

9. The imaging apparatus according to claim 8, wherein, The component terminals protrude from the surface of the membrane on one side of the curved surface.

10. The imaging apparatus according to claim 8, wherein, The electrical conductor protrudes from the curved surface to one side of the membrane, and The element terminal is recessed from the surface of the membrane on one side of the curved surface into one side of the solid-state imaging element.

11. The imaging apparatus according to claim 8, wherein, The electrical conductor is recessed from the curved surface into one side of the mounting substrate, and the element terminal protrudes from the surface of the membrane on one side of the curved surface to the other side of the curved surface.

12. The imaging apparatus according to claim 8, wherein, The mounting substrate includes mounting terminals at positions corresponding to the electrical conductor, the mounting terminals being electrically coupled to the electrical conductor. The electrical conductor protrudes from the rear surface of the base to one side of the mounting substrate, and The mounting terminal is recessed from one side of the mounting substrate on the base to one side of the rear surface of the mounting substrate.

13. The imaging apparatus according to claim 8, wherein, The mounting substrate includes mounting terminals at positions corresponding to the electrical conductor, the mounting terminals being electrically coupled to the electrical conductor. The electrical conductor is recessed from the rear surface of the base into one side of the curved surface, and The mounting terminal protrudes from the surface of the mounting substrate on one side of the base to the side of the base.

14. The imaging apparatus of claim 1, further comprising a wiring substrate between the solid-state imaging element and the bending receiving portion of the base, the wiring substrate comprising a wiring layer and formed in a bending shape along the bending surface of the bending receiving portion.

15. The imaging apparatus according to claim 14, wherein, The wiring substrate is flexible. A portion of the wiring substrate extends to the periphery of the side surface of the base, and electronic components are mounted on a portion of the wiring substrate.

16. The imaging apparatus according to claim 14, wherein, The wiring substrate includes a plurality of the wiring layers.

17. A method of manufacturing an imaging device, the method comprising: A solid-state imaging element is formed, wherein the solid-state imaging element includes a light-receiving surface on a base, and a plurality of pixels are arranged in a two-dimensional array on the light-receiving surface, wherein each pixel includes a photoelectric conversion region that converts incident light into an electrical signal; A base is formed, the base having a curved surface that is recessed in the incident direction of the incident light, the base including a curved receiving portion for accommodating the solid-state imaging element; The rear surface of the base, which is opposite to the light-receiving surface, and the curved surface face each other; as well as The solid-state imaging element is formed in a bent state on the bent receiving portion, wherein a film is located between the solid-state imaging element and the bent receiving portion.

Images