Silicon-based BDD electrode plate and preparation method thereof, reactor module and electrochemical reactor

Abstract

The invention relates to a silicon-based BDD electrode plate and a preparation method thereof, a reactor module and an electrochemical reactor. The silicon-based BDD electrode plate part mainly comprises a silicon-based BDD plate and an aluminum plate, conductive silver adhesive is arranged at one end, facing the aluminum plate, of the silicon-based BDD plate, and copper foil is arranged on the outer side of the conductive silver adhesive; an aluminum plate clamping groove is formed in the side, facing the silicon-based BDD plate, of the aluminum plate. The end, provided with the conductive silver adhesive and the copper foil, of the silicon-based BDD plate is inserted into the aluminum plate clamping groove. The silicon-based BDD plate is connected with the copper foil through the conductive silver adhesive and then connected with the aluminum plate with the clamping groove, a conductive circuit of the silicon-based BDD plate, the conductive silver adhesive, the copper foil and the aluminum plate is formed, and compared with a traditional connection mode of the silicon-based BDD electrode and the conductive mother rod, the conductive resistance in the conductive circuit can be greatly reduced, the conductive efficiency is improved, the power consumption is reduced, and the operation cost is reduced; therefore, the problem of high conductive resistance of the silicon-based BDD electrode is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of water treatment, in particular to a silicon-based BDD electrode plate, a preparation method thereof, a reactor module and an electrochemical reactor. BACKGROUND

[0002] The electrochemical water treatment technology is a green water treatment technology, in which the boron-doped diamond (BDD) electrode is the best electrochemical electrode material recognized by the world. It is paid more and more attention due to its strong corrosion resistance, high oxygen evolution point and most stable performance. At present, the BDD electrode is divided into silicon-based and niobium-based electrodes. The silicon-based BDD electrode is widely used because of its good diamond coating adhesion and small production deformation. However, the silicon-based material itself is brittle, difficult to connect with other metals, and has low conductivity, which seriously affects the production and assembly of the reactor. In addition, the silicon material is easily corroded by alkali, so higher requirements for corrosion protection are put forward in the production, processing and assembly of the silicon-based BDD electrode.

[0003] Based on the above characteristics, the existing silicon-based BDD reactor mostly adopts an immersion type reactor. The reactor shell is made of a corrosion-resistant material, the conductive female rod is connected with the silicon-based BDD electrode through a corrosion-resistant gasket, and the conductive female rod is sealed with the reaction tank through a sealing ring. Although this can well solve the problem of corrosion resistance, it will cause high conductive resistance of the silicon-based BDD electrode and the conductive female rod, which will reduce the conductive efficiency and increase the power consumption, thereby increasing the operating cost.

[0004] Therefore, how to overcome the defects of the prior art and solve the problem of high conductive resistance of the silicon-based BDD electrode is a difficult problem to be solved in the technical field. SUMMARY

[0005] In order to solve the problem of high conductive resistance of the silicon-based BDD electrode, the present application provides a silicon-based BDD electrode plate, a preparation method thereof, a reactor module and an electrochemical reactor.

[0006] The embodiments of the present application adopt the following technical solutions: In a first aspect, the present application provides a silicon-based BDD electrode plate, which comprises a silicon-based BDD plate and an aluminum plate. The silicon-based BDD plate is provided with conductive silver glue at one end facing the aluminum plate, and the outer side of the conductive silver glue is provided with a copper foil. The aluminum plate is provided with an aluminum plate clamping groove at one side facing the silicon-based BDD plate, and one end of the silicon-based BDD plate with the conductive silver glue and the copper foil is inserted into the aluminum plate clamping groove.

[0007] By adopting the technical scheme, the silicon-based BDD plate is connected with the copper foil through the conductive silver adhesive, and then connected with the aluminum plate with a clamping groove, thereby forming a conductive circuit of silicon-based BDD plate-conductive silver adhesive-copper foil-aluminum plate. Compared with the connection mode of the traditional silicon-based BDD electrode and the conductive female rod, the conductive resistance can be greatly reduced, the conductive efficiency can be improved, the power consumption can be reduced, and the operation cost can be reduced, thereby solving the problem of high conductive resistance of the silicon-based BDD electrode.

[0008] In some embodiments, the aluminum plate is provided with a conductive connecting block on the side away from the clamping groove of the aluminum plate, and the conductive connecting block is provided with a conductive connecting hole.

[0009] By adopting the technical scheme, the conductive connecting block can facilitate the electrical connection between the silicon-based BDD electrode plate and the subsequent second busbar conductive block, and further facilitate the electrical connection with the subsequent busbar connecting copper bar. The conductive connecting hole facilitates the compression and fixation of the conductive connecting block and the second busbar conductive block by the subsequent second conductive fastening bolt, so as to avoid the loosening affecting the conductive effect.

[0010] In some embodiments, the silicon-based BDD plate is provided with a first sealing ring near the aluminum plate, and the silicon-based BDD plate is provided with a first pressing strip on the side away from the aluminum plate.

[0011] By adopting the technical scheme, the first sealing ring and the first pressing strip can realize the sealing effect of the reaction region of the silicon-based BDD electrode plate and the titanium-based electrode plate in cooperation with the subsequent second sealing ring and the second pressing strip.

[0012] In a second aspect, the application provides a preparation method of a silicon-based BDD electrode plate, comprising: A layer of conductive silver adhesive is coated on the connection of the silicon-based BDD plate, the solid content of the conductive silver adhesive is in the range of 70-85%, and after uniform coating, the silicon-based BDD plate is static for 2-5 minutes; The copper foil is wrapped around the conductive silver adhesive coating of the silicon-based BDD plate and is forced to be flat and compressed; The silicon-based BDD plate with the conductive silver adhesive and the copper foil is inserted into the aluminum plate clamping groove of the aluminum plate; The connected silicon-based BDD plate and the aluminum plate are placed in a heating furnace for heating and curing, the curing temperature is 120-150 degrees, the curing time is 0.5-1 hour, and after curing, the silicon-based BDD plate is taken out; The connection resistance of the silicon-based BDD plate is detected, and the silicon-based BDD plate is a qualified module after meeting the requirements.

[0013] By adopting the technical scheme, the copper foil is wrapped around the conductive silver adhesive to connect with the aluminum plate, thereby solving the problems of assembly error and contact resistance, and improving the conductive efficiency by more than 30%.

[0014] In some embodiments, for the qualified module, a first sealing ring is mounted close to the aluminum plate, and a first pressing strip is mounted on the side away from the aluminum plate.

[0015] By adopting the technical scheme, the sealing effect of the reaction zones of the silicon-based BDD electrode plate and the titanium-based electrode plate can be conveniently achieved.

[0016] In a third aspect, the application provides a reactor module, comprising the silicon-based BDD electrode plate, the titanium-based electrode plate and the PVC side plate as described in the first aspect. The PVC side plate is provided with two and is oppositely arranged, and the two PVC side plates are connected by connecting bolts. The silicon-based BDD electrode plate and the titanium-based electrode plate are both provided with a plurality of plates, and the silicon-based BDD electrode plate and the titanium-based electrode plate are alternately arranged between the two PVC side plates.

[0017] By adopting the technical scheme, the electrode plate disc is assembled, the electrode plate can be replaced at any time, and the service life of the reactor module is 2-3 times longer than that of the traditional reactor.

[0018] In some embodiments, the titanium-based electrode plate comprises a titanium base plate, a second sealing ring and a second pressing strip, one side of the titanium base plate is provided with an extension block, one side of the extension block is provided with a conductive gasket, the second sealing ring is arranged on the titanium base plate close to the conductive gasket, and the second pressing strip is arranged at one end of the titanium base plate away from the conductive gasket.

[0019] By adopting the technical scheme, the extension block and the conductive gasket can facilitate the electrical connection between the titanium-based electrode plate and the subsequent first busbar conductive block, and further facilitate the electrical connection with the subsequent busbar connected copper bar. The second sealing ring and the second pressing strip can cooperate with the first sealing ring and the first pressing strip to achieve the sealing effect of the reaction zones of the silicon-based BDD electrode plate and the titanium-based electrode plate.

[0020] In some embodiments, the second pressing strips of the plurality of titanium-based electrode plates are arranged side by side between the two PVC side plates and are tightly fixed by second pressing strip fastening bolts; the first pressing strips of the plurality of silicon-based BDD electrode plates are arranged side by side between the two PVC side plates and are tightly fixed by first pressing strip fastening bolts; the first pressing strip cooperates with the second sealing ring to seal, and the second pressing strip cooperates with the first sealing ring to seal.

[0021] By adopting the technical scheme, the sealing effect of the reaction zones of the silicon-based BDD electrode plate and the titanium-based electrode plate can be achieved. By tightly connecting the first pressing strip and the second pressing strip through the first pressing strip fastening bolt and the second pressing strip fastening bolt, the sealing effect can be enhanced.

[0022] In some embodiments, a plurality of titanium-based electrode plates and a plurality of first busbar conductive blocks are arranged between the extension blocks and the conductive pads, and the extension blocks, the conductive pads and the first busbar conductive blocks are fixed by first conductive fastening bolts; a plurality of silicon-based BDD electrode plates and a plurality of second busbar conductive blocks are arranged between the conductive connecting blocks, and the conductive connecting blocks and the second busbar conductive blocks are fixed by second conductive fastening bolts.

[0023] By adopting the above technical solutions, the electrical connection between the titanium-based electrode plates and the first busbar conductive blocks and the electrical connection between the silicon-based BDD electrode plates and the second busbar conductive blocks can be realized, and then the electrical connection with the busbar-connected copper bar assembly can be realized. By fixing the extension blocks, the conductive pads and the first busbar conductive blocks by the first conductive fastening bolts and fixing the conductive connecting blocks and the second busbar conductive blocks by the second conductive fastening bolts, the stability of the conductive connection can be enhanced. In addition, the sealing connection and the conductive connection are different, and are connected by different bolts respectively, so that the sealing connection and the conductive connection can be separated and dispersed, the concentrated stress can be reduced, the stress of the silicon-based BDD plate can be reduced, and thus the brittleness of the silicon-based material can be solved.

[0024] In a fourth aspect, the application provides an electrochemical reactor, comprising a water inlet device, a water outlet device, a busbar-connected copper bar and a plurality of reactor modules as described in the third aspect, wherein: the plurality of reactor modules are stacked between the water inlet device and the water outlet device; the busbar-connected copper bar is provided with two and is inserted from both sides of the water outlet device, the busbar-connected copper bar on one side is connected with the first busbar conductive block of the reactor module, and the busbar-connected copper bar on the other side is connected with the second busbar conductive block of the reactor module.

[0025] By adopting the above technical solutions, the reactor can be flexibly assembled as needed, can be connected in series or in parallel, a single group can realize the stacking of 5-8 or even more reactor modules, high-density integration can be realized, and container integration assembly can also be realized, which has the effect of flexible application.

[0026] Compared with the prior art, the beneficial effects of the application include but are not limited to the following effects: 1. The silicon-based BDD plate is connected with the copper foil through the conductive silver glue, and then connected with the aluminum plate with a clamping groove, forming a conductive circuit of silicon-based BDD plate→ conductive silver glue→ copper foil→ aluminum plate. Compared with the traditional connection mode of silicon-based BDD electrode and conductive busbar, the conductive resistance can be greatly reduced, the conductive efficiency can be improved, the power consumption can be reduced, and the operating cost can be reduced, thereby solving the problem of high conductive resistance of the silicon-based BDD electrode.

[0027] 2. The electrically conductive connection and the sealed connection position are different, and are connected through different bolts respectively, so that the sealed connection and the electrically conductive connection can be separated and dispersed, the concentrated stress is reduced, the stress of the silicon-based BDD plate is reduced, and thus the brittleness of the silicon-based material can be solved.

[0028] 3. The reactor can be flexibly assembled according to requirements, can be connected in series or in parallel, a single group can realize stacking of 5 to 8 or even more reactor modules, high-density integration is realized, container integration assembly can also be realized, and flexible application effects are achieved. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly introduced. Obviously, the drawings described below are only some embodiments of the present application, and other drawings can also be obtained according to these drawings without creative labor for those skilled in the art.

[0030] Figure 1 A structure schematic diagram of a silicon-based BDD electrode plate provided by the embodiments of the present application is shown in the figure. Figure 2 A structure schematic diagram of an aluminum plate provided by the embodiments of the present application is shown in the figure. Figure 3 A partial explosion schematic diagram of a silicon-based BDD electrode plate provided by the embodiments of the present application is shown in the figure. Figure 4 A flow chart of a preparation method of a silicon-based BDD electrode plate provided by the embodiments of the present application is shown in the figure. Figure 5 A structure schematic diagram of a titanium-based electrode plate provided by the embodiments of the present application is shown in the figure. Figure 6 A structure schematic diagram of a reactor module provided by the embodiments of the present application is shown in the figure. Figure 7 An internal structure schematic diagram of a reactor module provided by the embodiments of the present application is shown in the figure. Figure 8 A structure schematic diagram of a first pressing strip from a first perspective provided by the embodiments of the present application is shown in the figure. Figure 9 A structure schematic diagram of a first pressing strip from a second perspective provided by the embodiments of the present application is shown in the figure. Figure 10 An enlarged schematic diagram of a sealing position of a first pressing strip provided by the embodiments of the present application is shown in the figure. Figure 11 A structure schematic diagram of a second pressing strip from a first perspective provided by the embodiments of the present application is shown in the figure. Figure 12 A structure schematic diagram of a second pressing strip from a second perspective provided by the embodiments of the present application is shown in the figure. Figure 13 A second enlarged schematic view of the sealing of the compression strip is provided for the embodiment of the present application; Figure 14 A structural schematic view of an electrochemical reactor is provided for the embodiment of the present application; Figure 15 A schematic view of a reactor module housing is provided for the embodiment of the present application. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not to limit the present application. In addition, the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The present application is described in detail below with reference to the drawings and embodiments. Embodiment 1

[0032] As shown in Figure 1 , with reference to Figure 2 and Figure 3 , the embodiment 1 of the present application provides a silicon-based BDD electrode plate, which comprises a silicon-based BDD plate 1 and an aluminum plate 2. In some embodiments, the silicon-based BDD plate 1 is a square silicon-based BDD anode plate, and the aluminum plate 2 is a connecting aluminum plate with a clamping groove and a bolt fixing hole, and the length of the aluminum plate 2 is consistent with the width of the silicon-based BDD plate 1. The aluminum plate 2 is connected with the silicon-based BDD plate 1 through the clamping groove. Due to the processing and manufacturing factors, there is a large tolerance in the thickness and surface of the silicon-based BDD plate 1, and the thickness tolerance is also large in different batches, which brings difficulties to the clamping groove connection of the aluminum plate 2. In addition, the direct connection of the silicon-based BDD plate 1 and the aluminum plate 2 results in a large conductive resistance. In order to overcome the above problems, a conductive silver glue 3 is arranged at one end of the silicon-based BDD plate 1 facing the aluminum plate 2, and a copper foil 4 is arranged outside the conductive silver glue 3; one side of the aluminum plate 2 facing the silicon-based BDD plate 1 is provided with an aluminum plate clamping groove 201, and one end of the silicon-based BDD plate 1 with the conductive silver glue 3 and the copper foil 4 is inserted into the aluminum plate clamping groove 201. Through the above technical solution, the silicon-based BDD plate 1 is connected with the copper foil 4 through the conductive silver glue 3, and then connected with the aluminum plate 2 with a clamping groove, forming a conductive circuit of silicon-based BDD plate 1→ conductive silver glue 3→ copper foil 4→ aluminum plate 2. Compared with the traditional connection mode of the silicon-based BDD electrode and the conductive female rod, the conductive resistance in the conductive circuit can be greatly reduced, the conductive efficiency can be improved, the power consumption can be reduced, and the operating cost can be reduced, thereby solving the problem of high conductive resistance of the silicon-based BDD electrode. At the same time, when the copper foil 4 is selected, the copper foil 4 with a suitable thickness can be selected according to the thickness difference between the silicon-based BDD plate 1 and the aluminum plate clamping groove 201, so that the connection of the silicon-based BDD plate 1 and the aluminum plate 2 is more stable, and the problem of inconsistent thickness tolerance of the silicon-based BDD plate 1 is solved.

[0033] Referring to Figure 2 As shown in some embodiments, the aluminum plate 2 is provided with a conductive connecting block 202 on the side away from the aluminum plate clamping groove 201. The conductive connecting block 202 can facilitate the electrical connection between the silicon-based BDD electrode plate and the subsequent second bus conductive block, and further facilitate the electrical connection with the subsequent bus connecting copper bar.

[0034] Referring to Figure 1 And Figure 3 As shown in some embodiments, the silicon-based BDD plate 1 is provided with a first sealing ring 5 near the aluminum plate 2, and a first pressing strip 6 on the side away from the aluminum plate 2. The first sealing ring 5 and the first pressing strip 6 can cooperate with the subsequent second sealing ring and the second pressing strip to achieve the sealing effect of the reaction area of the silicon-based BDD electrode plate and the titanium-based electrode plate. Embodiment 2

[0035] Based on the silicon-based BDD electrode plate provided in embodiment 1, this embodiment 2 further provides a preparation method of a silicon-based BDD electrode plate, comprising the following steps: Step 101: A layer of conductive silver glue 3 is coated on the connection of the silicon-based BDD plate 1, and the conductive silver glue 3 has a solid content in the range of 70-85%. After uniform coating, it is static for 2-5 minutes. It should be noted that before this step, preparation work needs to be done, which includes: inserting the silicon-based BDD plate 1 and the aluminum plate 2 to be connected, and visually checking and judging the gap and tightness between the two; selecting a copper foil 4 with a suitable thickness according to the connection gap and tightness, and making a U-shaped groove with the length based on the width of the silicon-based BDD plate 1.

[0036] Step 102: The copper foil 4 is wrapped around the conductive silver glue 3 coating of the silicon-based BDD plate 1 and is flattened and pressed tightly. The copper foil 4 in this step is the U-shaped copper foil 4 piece made in the aforementioned preparation work to match the edge shape of the silicon-based BDD plate 1 and the shape of the aluminum plate clamping groove 201.

[0037] Step 103: Insert the silicon-based BDD plate 1 with conductive silver glue 3 and copper foil 4 into the aluminum plate clamping groove 201 of the aluminum plate 2. When inserting, pay attention to the end of the aluminum plate 2 being flush with the silicon-based BDD plate 1. If there is a jam or glue leakage or blistering, etc., it needs to be pulled out as soon as possible, the residue of the jamming site and the blistering site are cleaned, and silver glue is added, and then reinserted.

[0038] Step 104: Put the connected silicon-based BDD plate 1 and aluminum plate 2 into a heating furnace for heating and curing, the curing temperature is 120-150 degrees, the curing time is 0.5-1h, and the cured product is taken out.

[0039] Step 105: Detect the connection resistance of the silicon-based BDD plate 1, and if it meets the requirements, it is a qualified module. For example, the resistance value is required to be less than or equal to 15mΩ, and if it reaches this range, it is determined to be a qualified module. Finally, for the qualified module, a first sealing ring 5 is installed near the aluminum plate 2, and a first pressing strip 6 is installed on the side away from the aluminum plate 2. The finished silicon-based BDD electrode plate is shown in Figure 1 .

[0040] Through the above technical solution, the copper foil is wrapped with conductive silver paste to connect with the aluminum plate, which solves the problems of assembly error and contact resistance, and improves the conductivity efficiency by more than 30%. Example 3

[0041] This embodiment 3 provides a titanium-based electrode plate used in cooperation with the silicon-based BDD electrode plate in embodiment 1-embodiment 2.

[0042] Reference Figure 5 , in some embodiments, the titanium-based electrode plate includes a titanium-based plate 9, a second sealing ring 10, and a second pressing strip 11. Among them, the titanium-based plate 9 is a square titanium-based cathode plate; one side of the titanium-based plate 9 is provided with an extension block 901, which directly extends from one side of the titanium-based plate 9 and can be an integrated structure; one side of the extension block 901 is provided with a conductive gasket 12; the extension block 901 and the conductive gasket 12 can facilitate the electrical connection between the titanium-based electrode plate and the subsequent first busbar conductive block, and then facilitate the electrical connection with the subsequent busbar connection copper bar, and ensure the stability of the electrical connection. The second sealing ring 10 is arranged on the titanium-based plate 9 near the conductive gasket 12, and the second pressing strip 11 is arranged on the titanium-based plate 9 away from the conductive gasket 12; the second sealing ring 10 and the second pressing strip 11 can cooperate with the first sealing ring 5 and the first pressing strip 6 to realize the sealing effect of the reaction area of the silicon-based BDD electrode plate and the titanium-based electrode plate, and play a sealing and corrosion prevention role. Example 4

[0043] Based on the silicon-based BDD electrode plate of embodiment 1-embodiment 2 and the titanium-based electrode plate of embodiment 3, this embodiment 4 provides a reactor module.

[0044] Reference Figure 6 and Figure 7As shown in the drawings, in some embodiments, the reactor module comprises PVC side plates 7 and the above-mentioned silicon-based BDD electrode plates and titanium-based electrode plates, wherein: the two PVC side plates 7 are provided and arranged oppositely, and are connected by connecting bolts 8; specifically, the PVC side plates 7 are made of polyvinyl chloride (PVC) and are square, and four connecting bolts 8 can be provided at the upper left, upper right, lower left and lower right corners of the PVC side plates 7. The silicon-based BDD electrode plates and the titanium-based electrode plates are both provided in multiple numbers, and the silicon-based BDD electrode plates and the titanium-based electrode plates are arranged alternately between the two PVC side plates 7. By using the above technical solution, the electrode plate disc is assembled, the electrode plate can be replaced at any time, and the service life of the reactor module is 2-3 times longer than that of the traditional reactor.

[0045] Reference Figure 6 and Figure 7 As shown in the drawings, in some embodiments, a plurality of titanium-based electrode plates are provided with extension blocks 901 and conductive gaskets 12, and a plurality of first busbar conductive blocks 15 are arranged between the extension blocks 901 and the conductive gaskets 12, the first busbar conductive blocks 15 can be two, and there is a certain interval between the two first busbar conductive blocks 15, and the extension blocks 901, the conductive gaskets 12 and the first busbar conductive blocks 15 are fixed and pressed by first conductive fastening bolts 16. A plurality of silicon-based BDD electrode plates are provided with conductive connecting blocks 202, and a plurality of second busbar conductive blocks 17 are arranged between the conductive connecting blocks 202, the second busbar conductive blocks 17 can be two, and there is a certain interval between the two second busbar conductive blocks 17, and the conductive connecting blocks 202 and the second busbar conductive blocks 17 are fixed and pressed by second conductive fastening bolts 18. By using the above technical solution, the electrical connection between the titanium-based electrode plates and the first busbar conductive blocks 15 and the electrical connection between the silicon-based BDD electrode plates and the second busbar conductive blocks 17 can be realized, and then the electrical connection with the bus connection copper bar assembly can be realized. And the extension blocks 901, the conductive gaskets 12 and the first busbar conductive blocks 15 are fixed and pressed by the first conductive fastening bolts 16, and the conductive connecting blocks 202 and the second busbar conductive blocks 17 are fixed and pressed by the second conductive fastening bolts 18, which can enhance the stability of the conductive connection.

[0046] Reference Figure 6 and Figure 7As shown, in some embodiments, the second pressing strip 11 of the plurality of titanium-based electrode plates is arranged side by side between the two PVC side plates 7, and is tightly fixed by the second pressing strip fastening bolt 13; wherein the second pressing strip fastening bolt 13 can be provided as two upper and lower ones, and the plurality of second pressing strips 11 are tightly fixed in series by the upper and lower second pressing strip fastening bolts 13. The first pressing strip 6 of the plurality of silicon-based BDD electrode plates is arranged side by side between the two PVC side plates 7, and is tightly fixed by the first pressing strip fastening bolt 14; wherein the first pressing strip fastening bolt 14 can be provided as two upper and lower ones, and the plurality of first pressing strips 6 are tightly fixed in series by the upper and lower first pressing strip fastening bolts 14.

[0047] Referring to Figure 8 and Figure 9 As shown, in some embodiments, the first pressing strip 6 comprises a first pressing strip through hole 601 provided at the upper and lower ends, a first clamping groove 602 provided towards the silicon-based BDD plate 1, and a first sealing groove 603 and a second sealing groove 604 on the two side edges adjacent to the first clamping groove 602. Referring to Figure 10 As shown, the first pressing strip 6 cooperates with the second sealing ring 10 for sealing, specifically, the first clamping groove 602 of the first pressing strip 6 is used for clamping the silicon-based BDD plate 1, and the first sealing groove 603 and the second sealing groove 604 are respectively used for clamping the second sealing ring 10 on the adjacent titanium-based plate 9, that is, each first pressing strip 6 clamps half of the two adjacent second sealing rings 10, and finally all the first pressing strips 6 are tightly connected through the first pressing strip through hole 601 and the first pressing strip fastening bolt 14, to complete the sealing connection on the side of the first pressing strip 6. The second sealing ring 10 can be made of fluoroplastic material to ensure sealing while preventing corrosion.

[0048] Referring to Figure 11 and Figure 12 As shown, in some embodiments, the second pressing strip 11 comprises a second pressing strip through hole 1101 provided at the upper and lower ends, a second clamping groove 1102 provided towards the titanium-based plate 9, and a third sealing groove 1103 and a fourth sealing groove 1104 on the two side edges adjacent to the second clamping groove 1102. Referring to Figure 13 As shown, the second pressing strip 11 cooperates with the first sealing ring 5 for sealing. Specifically, the second clamping groove 1102 of the second pressing strip 11 is used for clamping the titanium-based plate 9, and the third sealing groove 1103 and the fourth sealing groove 1104 are respectively used for clamping the first sealing ring 5 on the adjacent silicon-based BDD plate 1, that is, each second pressing strip 11 clamps half of the two adjacent first sealing rings 5, and finally all the second pressing strips 11 are tightly connected through the second pressing strip through hole 1101 and the second pressing strip fastening bolt 13, to complete the sealing connection on the side of the second pressing strip 11. The first sealing ring 5 can be made of fluoroplastic material to ensure sealing while preventing corrosion.

[0049] By adopting the technical scheme, the sealing and corrosion prevention effect of the reaction area of the silicon-based BDD electrode plate and the titanium-based electrode plate can be realized. And by fastening and connecting the first pressing strip 6 and the second pressing strip 11 through the first pressing strip fastening bolt 13 and the second pressing strip fastening bolt 14, the sealing and corrosion prevention effect can be enhanced.

[0050] In addition, the conductive connection and the sealing connection position are different, and are connected through different bolts respectively, so that the sealing connection and the conductive connection can be separated and dispersed, the concentrated stress is reduced, the stress of the silicon-based BDD plate is reduced, and the brittleness problem of the silicon-based material can be solved.

[0051] In some embodiments, the silicon-based BDD plate 1 is 240x130x3mm (for the convenience of understanding, this specification is taken as an example for introduction, and the specific specification can be flexibly adjusted according to actual needs; the specific data value is the same below), the titanium-based plate 9 is 240x130x2mm; the aluminum plate 2 is a split type clamping groove aluminum plate, the groove width is 3.1mm; the middle ear hole is convenient for connection. Preferably, the silver content in the conductive silver adhesive 3 is 70-85%, the copper foil thickness is 0.01-0.06mm; the module size is 420x200x200mm standard unit, which can be combined through bolts; the PVC side plate 7 thickness is 12-20mm, which has corrosion and insulation functions; the assembly tolerance is controlled in the range of 0.05-0.2mm; a multi-level conductive structure is adopted: silicon-based BDD plate 1→ conductive silver adhesive 3→ copper foil 4→ aluminum plate 2→ first bus conductive block 15 (second bus conductive block 17). Anode side stress analysis: bolt-PVC side plate 7-second pressing strip 11-first sealing ring 5-silicon-based BDD plate 1; cathode side stress analysis: bolt-PVC side plate 7-first pressing strip 6-second sealing ring 10-titanium-based plate 9. Example 5

[0052] Based on the reactor module provided in Example 4, this Example 5 provides an electrochemical reactor.

[0053] Reference Figure 14As shown, the electrochemical reactor comprises a water inlet device 19, a water outlet device 20, busbar connecting copper bars 21, and a plurality of reactor modules 22 as claimed in any one of claims 6-9, wherein: the plurality of reactor modules 22 are stacked between the water inlet device 19 and the water outlet device 20; the busbar connecting copper bars 21 are provided in two and inserted from both sides of the water outlet device 20, with one of the busbar connecting copper bars 21 being electrically connected to the first busbar conductive block 15 of the reactor module and the other being electrically connected to the second busbar conductive block 17 of the reactor module. In operation, the reactor is powered by the busbar connecting copper bars 21, water is fed from the water inlet device 19 and discharged from the water outlet device 20 after reaction; the specific structures of the water inlet device 19, the water outlet device 20, and the busbar connecting copper bars 21 can be selected from any existing technology, which will not be described here. Through the above technical solution, the reactor can be flexibly assembled as needed, and can be connected in series or in parallel. A single set can realize the stacking of 5-8 or even more reactor modules, achieve high-density integration, and also realize the integration of a container, with the effect of flexible application.

[0054] Reference Figure 6 As shown, the PVC side plates 7 are provided with a plurality of mounting holes 701 on the upper and lower sides, and the stacking and mounting of a plurality of reactor modules 22 can be realized through the mounting holes 701 and connecting bolts.

[0055] Reference Figure 15 As shown, in some embodiments, in addition to the two PVC side plates 7 arranged oppositely, the shell of the reactor module 22 also comprises two support plates 23 arranged oppositely. The support plates 23 can also be PVC plates, and the two support plates 23 and the two PVC side plates 7 form a square to form a corrosion-resistant shell. The inner side of the PVC side plate 7 is provided with a positioning groove 702 at the connection with the support plate 23, and the two sides of the support plate 23 are respectively clamped in the positioning grooves 702 of the two PVC side plates 7. One end of the support plate 23 is lower than a part of the end face of the PVC side plate 7, and the other end extends beyond a part of the end face of the PVC side plate 7 and is lower than the part. The lengths of the lower part and the extended part are the same. In this way, when a plurality of reactor modules 22 are stacked, the positioning and installation can be easily completed through the support plates 23 and the positioning grooves 702, and the connection between the upper and lower reactor modules 22 after stacking is more stable.

[0056] In summary, the silicon-based BDD electrode plate, the reactor module and the electrochemical reactor provided by the application effectively solve the problem of high conductive connection resistance of the silicon-based electrode; also solve the problem of fragile assembly of the assembled and pressed electrode plate; also solve the problem of pre-stress caused by assembly error; also solve the problem of assembly sealing, and realize modular design and economic assembly. Through the scheme of the application, the tantalum and niobium pressed sheet for silicon-based conductive connection is reduced, the assembly cost is reduced, the traditional tantalum or niobium pressed sheet accounts for 20% of the assembly cost (tantalum and niobium are expensive, and other metals are easy to corrode under high current), and the conductive resistance is also reduced, thereby reducing the operation cost. According to the calculation, the cost of 1 degree of electricity per ton of water treatment can be reduced for every 10 mΩ of resistance reduction. Example 6

[0057] Based on the schemes provided in Examples 1-5, this Example 6 further verifies the effect of the scheme through a plurality of specific examples.

[0058] Example 1: A silicon-based BDD plate 1 with a size of 130mmx240mmx3mm and a thickness tolerance of ±0.05mm is prepared; an aluminum plate 2 with an aluminum plate clamping groove 201 is prepared; conductive silver paste 3 (thickness 0.1-0.3mm) is coated on the connection area of the silicon-based BDD plate 1 and the aluminum plate clamping groove 201; copper foil 4 (0.01-0.06mm thick) is laid on the conductive silver paste 3 and heated and cured; PVC side plates 7 are assembled and fixed with M10 bolts; and bus bars are connected through M12 conductive bolts. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 1.

[0059] Example 2: A silicon-based BDD plate 1 with a size of 130mmx240mmx3mm and a thickness tolerance of ±0.05mm is prepared; an aluminum plate 2 with an aluminum plate clamping groove 201 is prepared; no conductive silver paste 3 is coated on the connection area of the silicon-based BDD plate 1 and the aluminum plate clamping groove 201; copper foil 4 (0.01-0.06mm thick) is laid on the silicon-based BDD plate 1 and heated and cured; PVC side plates 7 are assembled and fixed with M10 bolts; and bus bars are connected through M12 conductive bolts. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 1.

[0060] Example 3: A silicon-based BDD plate 1 with a size of 130mmx240mmx3mm and a thickness tolerance of ±0.05mm is prepared; an aluminum plate 2 with an aluminum plate clamping groove 201 is prepared; conductive silver paste 3 (thickness 0.1-0.3mm) is coated on the connection area of the silicon-based BDD plate 1 and the aluminum plate clamping groove 201; no copper foil 4 is laid; PVC side plates 7 are assembled and fixed with M10 bolts; and bus bars are connected through M12 conductive bolts. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 1.

[0061] Example 4: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; no conductive silver paste 3 and copper foil 4 is coated in the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201, and it is directly hard connected; assemble PVC side plate 7, fixed with M10 bolt; connect bus bar through M12 conductive bolt. After the reactor is installed, conductive resistance test is carried out, and the results are shown in Table 1.

[0062] Table 1:

[0063] As can be seen from Table 1, the average value of the conductive resistance measured in Example 1 is the smallest, which verifies the technical effect of reducing the conductive resistance of the anode-silver paste-copper foil-aluminum slot (i.e. silicon-based BDD plate 1→ conductive silver paste 3→ copper foil 4→ aluminum plate 2) compared with other connection modes.

[0064] The different examples are described below by the difference of the conductive silver paste 3 process.

[0065] Example 5: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; coat conductive silver paste 3 in the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201, coating thickness 0.1-0.3mm; lay copper foil 4 (0.01~0.06mm thick) on the conductive silver paste 3 and heat and cure; assemble PVC side plate 7, fixed with M10 bolt; connect bus bar through M12 conductive bolt. Conductive silver paste 3 and construction process 1: 50% < solid content ≤70%, heating temperature 100°, heating time 1h. After the reactor is installed, conductive resistance test is carried out, and the results are shown in Table 2.

[0066] Example 6: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; coat conductive silver paste 3 in the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201, coating thickness 0.1-0.3mm; lay copper foil 4 (0.01~0.06mm thick) on the conductive silver paste 3 and heat and cure; assemble PVC side plate 7, fixed with M10 bolt; connect bus bar through M12 conductive bolt. Conductive silver paste 3 and construction process 2: 70% < solid content ≤85%, heating temperature 120°, heating time 1h. After the reactor is installed, conductive resistance test is carried out, and the results are shown in Table 2.

[0067] Example 7: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; coat conductive silver paste 3 on the connection area between silicon-based BDD plate 1 and aluminum plate clamping groove 201, coating thickness 0.1-0.3mm; lay copper foil 4 (0.01~0.06mm thick) on conductive silver paste 3, heat and cure; assemble PVC side plate 7, fixed with M10 bolts; connect busbar through M12 conductive bolts. Conductive silver paste 3 and construction process 3: 85% < solid content ≤ 90%, heating temperature 150°, heating time 0.5h. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 2.

[0068] Example 8: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; coat conductive silver paste 3 on the connection area between silicon-based BDD plate 1 and aluminum plate clamping groove 201, coating thickness 0.1-0.3mm; lay copper foil 4 (0.01~0.06mm thick) on conductive silver paste 3, heat and cure; assemble PVC side plate 7, fixed with M10 bolts; connect busbar through M12 conductive bolts. Conductive silver paste 3 and construction process 4: 70% < solid content < 85%, heating temperature 150°, heating time 0.5h. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 2.

[0069] Example 9: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; coat conductive silver paste 3 on the connection area between silicon-based BDD plate 1 and aluminum plate clamping groove 201, coating thickness 0.1-0.3mm; lay copper foil 4 (0.01~0.06mm thick) on conductive silver paste 3, heat and cure; assemble PVC side plate 7, fixed with M10 bolts; connect busbar through M12 conductive bolts. Conductive silver paste 3 and construction process 5: silver powder, heating temperature 120°, heating time 1h. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 2.

[0070] Table 2:

[0071] As can be seen from Table 2, the average value of the conductive resistance measured in Example 6 is the smallest, that is, when the conductive silver paste 3 parameters are 70% < solid content ≤ 85%, and the construction process is: heating temperature 120°, heating time 1h, the average value of the conductive resistance obtained is the smallest, and the technical effect is the best. Therefore, preferably, 70% < solid content ≤ 85% conductive silver paste 3 is used, and a construction process of heating temperature 120° and heating time 1h is used to make the silicon-based BDD electrode plate.

[0072] Next, the examples of the prior art and the examples of the application are compared and described below.

[0073] Example 10: A silicon-based BDD plate 1 with a size of 130 mm x 240 mm x 3 mm and a thickness tolerance of ±0.05 mm is prepared; a 5-10 mm wide corrosion-resistant conductive metal (such as tantalum sheet or niobium sheet) is used to connect the joint of the silicon-based BDD plate 1; the conductive body is fixed and compressed by a bolt, and the conductive body can be made of titanium or externally corrosion-resistant copper or aluminum. The shell is packaged with polypropylene (PP) or PVC material; an external conductive bus is connected. The conductive effect is shown in Table 3.

[0074] Table 3:

[0075] As can be seen from Table 3, the conductive resistance of Example 1 of the application is significantly reduced compared to Example 10 of the prior art, which shows that the application solves the problem of high conductive resistance of the silicon-based BDD electrode in the prior art, can improve the conductive efficiency, reduce the power consumption and reduce the operating cost.

[0076] The above only describes the preferred embodiments of the application and is not intended to limit the application. Any modifications, equivalent replacements and improvements made within the spirit and principle of the application shall be included in the protection scope of the application.

Claims

1. A silicon-based BDD electrode plate, characterized by, It includes a silicon-based BDD plate (1) and an aluminum plate (2), the silicon-based BDD plate (1) is provided with a conductive silver glue (3) at one end of the aluminum plate (2), and the outer side of the conductive silver glue (3) is provided with a copper foil (4); The aluminum plate (2) is provided with an aluminum plate clamping groove (201) on one side facing the silicon-based BDD plate (1), and one end of the silicon-based BDD plate (1) with the conductive silver glue (3) and the copper foil (4) is inserted into the aluminum plate clamping groove (201).

2. The silicon-based BDD electrode plate of claim 1, wherein, The aluminum plate (2) is provided with a conductive connecting block (202) on the side away from the aluminum plate clamping groove (201), and the conductive connecting block (202) is provided with a conductive connecting hole (203).

3. The silicon-based BDD electrode plate of claim 1, wherein, The silicon-based BDD plate (1) is provided with a first sealing ring (5) near the aluminum plate (2), and the silicon-based BDD plate (1) is provided with a first pressing strip (6) on the side away from the aluminum plate (2).

4. A method of preparing a silicon-based BDD electrode plate, characterized by, It includes: A layer of conductive silver glue (3) is coated on the connection of the silicon-based BDD plate (1), the conductive silver glue (3) contains solid content in the range of 70-85%, and after uniform coating, it is static for 2-5 minutes; The copper foil (4) is wrapped around the conductive silver glue (3) coating of the silicon-based BDD plate (1) and is flattened and pressed tightly; The silicon-based BDD plate (1) with the conductive silver glue (3) and the copper foil (4) is inserted into the aluminum plate clamping groove (201) of the aluminum plate (2); The connected silicon-based BDD plate (1) and aluminum plate (2) are placed into a heating furnace for heating and solidification, the solidification temperature is 120-150 degrees, the solidification time is 0.5-1h, and after solidification is completed, it is taken out; The connection resistance of the silicon-based BDD plate (1) is detected, and after meeting the requirements, it is a qualified module.

5. The method of claim 4, wherein the silicon-based BDD electrode plate is prepared by the steps of: It also includes: For the qualified module, a first sealing ring (5) is installed near the aluminum plate (2), and a first pressing strip (6) is installed on the side away from the aluminum plate (2).

6. A reactor module characterized by, It includes the silicon-based BDD electrode plate, the titanium-based electrode plate and the PVC side plate (7) according to any one of claims 1-3, wherein: The PVC side plate (7) is provided with two and is oppositely arranged, and the two PVC side plates (7) are connected through connecting bolts (8); The silicon-based BDD electrode plate and the titanium-based electrode plate are both provided with a plurality of, and the silicon-based BDD electrode plate and the titanium-based electrode plate are alternately arranged between the two PVC side plates (7).

7. The reactor module of claim 6, wherein, The titanium-based electrode plate includes a titanium base plate (9), a second sealing ring (10) and a second pressing strip (11), one side of the titanium base plate (9) is provided with an extension block (901), one side of the extension block (901) is provided with a conductive gasket (12), the second sealing ring (10) is arranged on the titanium base plate (9) near the conductive gasket (12), and the second pressing strip (11) is arranged at one end of the titanium base plate (9) away from the conductive gasket (12).

8. The reactor module of claim 7, wherein, A plurality of titanium-based electrode plates of the second compression strip (11) are arranged side by side between two PVC side plates (7), and are compressed and fixed by the second compression strip fastening bolt (13); a plurality of silicon-based BDD electrode plates of the first compression strip (6) are arranged side by side between two PVC side plates (7), and are compressed and fixed by the first compression strip fastening bolt (14); the first compression strip (6) is sealed with the second sealing ring (10), and the second compression strip (11) is sealed with the first sealing ring (5).

9. The reactor module of claim 7, wherein, A plurality of titanium-based electrode plates of the extension block (901) and the conductive gasket (12) are provided with a plurality of first bus conductive blocks (15), the extension block (901), the conductive gasket (12) and the first bus conductive block (15) are compressed and fixed by the first conductive fastening bolt (16); a plurality of silicon-based BDD electrode plates of the conductive connecting block (202) are provided with a plurality of second bus conductive blocks (17), the conductive connecting block (202) and the second bus conductive block (17) are compressed and fixed by the second conductive fastening bolt (18).

10. An electrochemical reactor characterized by, The water inlet device (19), the water outlet device (20), the bus connection copper bar (21) and a plurality of reactor modules as claimed in any one of claims 6-9 are included, wherein: a plurality of reactor modules are stacked between the water inlet device (19) and the water outlet device (20); the bus connection copper bar (21) is provided with two and is inserted from both sides of the water outlet device (20), the bus connection copper bar (21) on one side is connected with the first bus conductive block (15) of the reactor module, and the bus connection copper bar (21) on the other side is connected with the second bus conductive block (17) of the reactor module.

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