Silicon-based bdd electrode plates and methods of making the same, reactor modules, and electrochemical reactors

Abstract

The application relates to a silicon-based BDD electrode plate and a preparation method thereof, a reactor module and an electrochemical reactor. The silicon-based BDD electrode plate mainly comprises a silicon-based BDD plate and an aluminum plate, one end of the silicon-based BDD plate is provided with conductive silver glue, and the outer side of the conductive silver glue is provided with a copper foil; one side of the aluminum plate facing the silicon-based BDD plate is provided with an aluminum plate clamping groove, and one end of the silicon-based BDD plate with the conductive silver glue and the copper foil is inserted into the aluminum plate clamping groove. The silicon-based BDD plate is connected with the copper foil through the conductive silver glue, and then connected with the aluminum plate with the clamping groove, so that the conductive circuit of the silicon-based BDD plate-conductive silver glue-copper foil-aluminum plate is formed. Compared with the connection mode of the traditional silicon-based BDD electrode and the conductive female rod, the conductive resistance in the silicon-based BDD electrode can be greatly reduced, the conductive efficiency is improved, the power consumption is reduced, the operation cost is reduced, and the problem of high conductive resistance of the silicon-based BDD electrode is solved.

Description

Technical Field

[0001] This application relates to the field of water treatment technology, and in particular to a silicon-based BDD electrode plate and its preparation method, a reactor module, and an electrochemical reactor. Background Technology

[0002] Electrochemical water treatment technology is a green water treatment technology. Boron-doped diamond (BDD) electrodes are recognized worldwide as the best electrochemical electrode material due to their strong corrosion resistance, high oxygen evolution point, and stable performance, making them increasingly important. Currently, BDD electrodes are divided into silicon-based and niobium-based electrodes. Silicon-based BDD electrodes are widely used due to their good diamond coating adhesion and minimal production deformation. However, silicon-based materials are relatively brittle, difficult to bond with other metals, and have low conductivity, which seriously affects reactor production and assembly. Furthermore, silicon is susceptible to alkali corrosion; therefore, higher requirements are placed on corrosion prevention during the production, processing, and assembly of silicon-based BDD electrodes.

[0003] Based on the above characteristics, most existing silicon-based BDD reactors adopt the submerged reactor type. The reactor shell is made of corrosion-resistant material, and the conductive mother rod and silicon-based BDD electrode are connected by corrosion-resistant gaskets and bolts. The conductive mother rod and the reaction tank are sealed by a sealing ring. Although this solves the corrosion problem well, it leads to the problem of high conductivity resistance between the silicon-based BDD electrode and the conductive mother rod. High conductivity resistance will reduce conductivity efficiency, increase power consumption, and incur additional operating costs.

[0004] Therefore, overcoming the shortcomings of existing technologies and solving the problem of high conductivity resistance of silicon-based BDD electrodes is a difficult problem to be solved in this technical field. Summary of the Invention

[0005] In view of the above-mentioned defects or improvement needs of the prior art, and in order to solve the problem of high conductivity resistance of silicon-based BDD electrodes, this application provides a silicon-based BDD electrode plate and its preparation method, a reactor module and an electrochemical reactor.

[0006] The embodiments of this application adopt the following technical solutions:

[0007] In a first aspect, this application provides a silicon-based BDD electrode plate, including a silicon-based BDD plate and an aluminum plate, wherein a conductive silver paste is disposed on one end of the silicon-based BDD plate facing the aluminum plate, and a copper foil is disposed on the outside of the conductive silver paste.

[0008] The aluminum plate has an aluminum plate slot on the side facing the silicon-based BDD board, and the end of the silicon-based BDD board with the conductive silver paste and the copper foil is inserted into the aluminum plate slot.

[0009] By adopting the technical scheme, the silicon-based BDD plate is connected with the copper foil through the conductive silver adhesive, and then connected with the aluminum plate with the clamping groove, to form a conductive circuit of silicon-based BDD plate-conductive silver adhesive-copper foil-aluminum plate. Compared with the connection mode of the traditional silicon-based BDD electrode and the conductive female rod, the conductive resistance can be greatly reduced, the conductive efficiency can be improved, the power consumption can be reduced, and the operation cost can be reduced, so as to solve the problem of high conductive resistance of the silicon-based BDD electrode.

[0010] In some embodiments, the aluminum plate is provided with a conductive connecting block on the side away from the clamping groove of the aluminum plate, and the conductive connecting block is provided with a conductive connecting hole.

[0011] By adopting the technical scheme, the conductive connecting block can facilitate the electrical connection between the silicon-based BDD electrode plate and the subsequent second busbar conductive block, and then facilitate the electrical connection with the subsequent busbar connecting copper bar. The conductive connecting hole facilitates the compression and fixation of the conductive connecting block and the second busbar conductive block by the subsequent second conductive fastening bolt, so as to avoid the loosening affecting the conductive effect.

[0012] In some embodiments, the silicon-based BDD plate is provided with a first sealing ring close to the aluminum plate, and the silicon-based BDD plate is provided with a first pressing strip away from the aluminum plate.

[0013] By adopting the technical scheme, the first sealing ring and the first pressing strip can realize the sealing effect of the reaction region of the silicon-based BDD electrode plate and the titanium-based electrode plate in cooperation with the subsequent second sealing ring and the second pressing strip.

[0014] In a second aspect, the application provides a preparation method of a silicon-based BDD electrode plate, comprising:

[0015] A layer of conductive silver adhesive is coated on the connection of the silicon-based BDD plate, the solid content of the conductive silver adhesive is in the range of 70-85%, and after uniform coating, the silicon-based BDD plate is static for 2-5 minutes;

[0016] The copper foil is wrapped around the conductive silver adhesive coating of the silicon-based BDD plate and is forced to be flattened and compressed;

[0017] The silicon-based BDD plate with the conductive silver adhesive and the copper foil is inserted into the aluminum plate clamping groove of the aluminum plate;

[0018] The connected silicon-based BDD plate and the aluminum plate are placed in a heating furnace for heating and solidification, the solidification temperature is 120-150 degrees, the solidification time is 0.5-1 hour, and after solidification is completed, the silicon-based BDD plate and the aluminum plate are taken out;

[0019] The connection resistance of the silicon-based BDD plate is detected, and the silicon-based BDD plate is a qualified module after meeting the requirements.

[0020] By adopting the technical scheme, the copper foil is wrapped with the conductive silver adhesive to connect with the aluminum plate, the assembly error and the contact resistance problem are solved, and the conductive efficiency is improved by more than 30%.

[0021] In some embodiments, for a qualified module, a first sealing ring is arranged close to the aluminum plate, and a first pressing strip is arranged on the side away from the aluminum plate.

[0022] By adopting the technical scheme, the sealing effect of the reaction interval of the silicon-based BDD electrode plate and the titanium-based electrode plate can be conveniently achieved.

[0023] In a third aspect, the application provides a reactor module, comprising a silicon-based BDD electrode plate, a titanium-based electrode plate and a PVC side plate as described in the first aspect, wherein:

[0024] The PVC side plate is provided with two and is arranged oppositely, and the two PVC side plates are connected by connecting bolts;

[0025] The silicon-based BDD electrode plate and the titanium-based electrode plate are both provided with a plurality of, and the silicon-based BDD electrode plate and the titanium-based electrode plate are arranged alternately between the two PVC side plates.

[0026] By adopting the technical scheme, the electrode plate disc assembly is realized, the electrode plate can be replaced at any time, and the service life of the reactor module is prolonged by 2-3 times compared with the traditional reactor.

[0027] In some embodiments, the titanium-based electrode plate comprises a titanium base plate, a second sealing ring and a second pressing strip, one side of the titanium base plate is provided with an extension block, one side of the extension block is provided with a conductive gasket, the second sealing ring is arranged on the titanium base plate close to the conductive gasket, and the second pressing strip is arranged at one end of the titanium base plate away from the conductive gasket.

[0028] By adopting the technical scheme, the extension block and the conductive gasket can facilitate the electrical connection of the titanium-based electrode plate with the subsequent first busbar conductive block, and further facilitate the electrical connection with the subsequent busbar connection copper bar. The second sealing ring and the second pressing strip can cooperate with the first sealing ring and the first pressing strip in front to realize the sealing effect of the reaction interval of the silicon-based BDD electrode plate and the titanium-based electrode plate.

[0029] In some embodiments, the second pressing strips of the plurality of titanium-based electrode plates are arranged side by side between the two PVC side plates and are tightly fixed by second pressing strip fastening bolts; the first pressing strips of the plurality of silicon-based BDD electrode plates are arranged side by side between the two PVC side plates and are tightly fixed by first pressing strip fastening bolts; the first pressing strip cooperates with the second sealing ring to seal, and the second pressing strip cooperates with the first sealing ring to seal.

[0030] By adopting the technical scheme, the sealing effect of the reaction zones of the silicon-based BDD electrode plate and the titanium-based electrode plate can be achieved. The first pressing strip and the second pressing strip are fastened and connected by the first pressing strip fastening bolt and the second pressing strip fastening bolt, so that the sealing effect can be enhanced.

[0031] In some embodiments, a plurality of first bus conductive blocks are arranged between the extension blocks of the titanium-based electrode plate and the conductive gaskets, and the extension blocks, the conductive gaskets and the first bus conductive blocks are fixed and compressed by the first conductive fastening bolt. A plurality of second bus conductive blocks are arranged between the conductive connecting blocks of the silicon-based BDD electrode plate, and the conductive connecting blocks and the second bus conductive blocks are fixed and compressed by the second conductive fastening bolt.

[0032] By adopting the technical scheme, the electrical connection between the titanium-based electrode plate and the first bus conductive block and the electrical connection between the silicon-based BDD electrode plate and the second bus conductive block can be achieved, and then the electrical connection with the bus connecting copper bar assembly can be achieved. The extension blocks, the conductive gaskets and the first bus conductive blocks are fixed and compressed by the first conductive fastening bolt, and the conductive connecting blocks and the second bus conductive blocks are fixed and compressed by the second conductive fastening bolt, so that the stability of the conductive connection can be enhanced. In addition, the conductive connection and the sealing connection are connected by different bolts respectively, so that the sealing connection and the conductive connection can be separated and dispersed, the concentrated stress can be reduced, the stress on the silicon-based BDD plate can be reduced, and the brittleness of the silicon-based material can be solved.

[0033] In a fourth aspect, the application provides an electrochemical reactor, comprising a water inlet device, a water outlet device, a bus connecting copper bar and a plurality of reactor modules as described in the third aspect, wherein: the plurality of reactor modules are stacked between the water inlet device and the water outlet device; the bus connecting copper bar is provided with two and is inserted from both sides of the water outlet device, the bus connecting copper bar on one side is connected with the first bus conductive block of the reactor module, and the bus connecting copper bar on the other side is connected with the second bus conductive block of the reactor module.

[0034] By adopting the technical scheme, the reactor can be flexibly assembled as needed, and can be connected in series or in parallel. A single set can realize the stacking of 5-8 or even more reactor modules, realize high-density integration, and also can realize container integrated assembly, and has the effect of flexible application.

[0035] Compared with the prior art, the beneficial effects of the application include but are not limited to the following effects:

[0036] 1. The silicon-based BDD plate is connected with the copper foil through the conductive silver glue, and then connected with the aluminum plate with a clamping slot, forming a conductive circuit of silicon-based BDD plate→ conductive silver glue→ copper foil→ aluminum plate. Compared with the traditional connection mode of silicon-based BDD electrode and conductive female rod, the conductive resistance can be greatly reduced, the conductive efficiency can be improved, the power consumption can be reduced, and the operating cost can be reduced, thereby solving the problem of high conductive resistance of the silicon-based BDD electrode.

[0037] 2. The conductive connection and the sealing connection are different, and are connected through different bolts respectively, so that the sealing connection and the conductive connection can be separated and dispersed, the concentrated stress can be reduced, and the stress of the silicon-based BDD plate can be reduced, thereby solving the problem of brittleness of the silicon-based material.

[0038] 3. The reactor can be flexibly assembled according to needs, and can be connected in series or in parallel. A single group can realize the stacking placement of 5-8 or even more reactor modules, realize high-density integration, and also realize container integrated assembly, and has the effect of flexible application. BRIEF DESCRIPTION OF DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly introduced. Obviously, the drawings described below are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0040] Figure 1 A structure schematic diagram of a silicon-based BDD electrode plate provided by the embodiments of the present application is shown in the figure.

[0041] Figure 2 A structure schematic diagram of an aluminum plate provided by the embodiments of the present application is shown in the figure.

[0042] Figure 3 A partial exploded schematic diagram of a silicon-based BDD electrode plate provided by the embodiments of the present application is shown in the figure.

[0043] Figure 4 A flow chart of a preparation method of a silicon-based BDD electrode plate provided by the embodiments of the present application is shown in the figure.

[0044] Figure 5 A structure schematic diagram of a titanium-based electrode plate provided by the embodiments of the present application is shown in the figure.

[0045] Figure 6 A structure schematic diagram of a reactor module provided by the embodiments of the present application is shown in the figure.

[0046] Figure 7 An internal structure schematic diagram of a reactor module provided by the embodiments of the present application is shown in the figure.

[0047] Figure 8 A structural schematic diagram of a first pressing strip from a first perspective according to an embodiment of the present application is provided;

[0048] Figure 9 A structural schematic diagram of a first pressing strip from a second perspective according to an embodiment of the present application is provided;

[0049] Figure 10 An enlarged schematic diagram of a sealing position of a first pressing strip according to an embodiment of the present application is provided;

[0050] Figure 11 A structural schematic diagram of a second pressing strip from a first perspective according to an embodiment of the present application is provided;

[0051] Figure 12 A structural schematic diagram of a second pressing strip from a second perspective according to an embodiment of the present application is provided;

[0052] Figure 13 An enlarged schematic diagram of a sealing position of a second pressing strip according to an embodiment of the present application is provided;

[0053] Figure 14 A structural schematic diagram of an electrochemical reactor according to an embodiment of the present application is provided;

[0054] Figure 15 A schematic diagram of a reactor module shell according to an embodiment of the present application is provided. DETAILED DESCRIPTION

[0055] In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not used to limit the present application. In addition, the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments. Embodiment 1

[0056] As shown in Figure 1 , reference is made to Figure 2 and Figure 3As shown in FIG. 1, in some embodiments, the silicon-based BDD electrode plate includes a silicon-based BDD plate 1 and an aluminum plate 2. In some embodiments, the silicon-based BDD plate 1 is a square silicon-based BDD anode plate, and the aluminum plate 2 is a connecting aluminum plate with a clamping groove and bolt fixing holes, and the length of the aluminum plate 2 is consistent with the width of the silicon-based BDD plate 1. The aluminum plate 2 is connected with the silicon-based BDD plate 1 through the clamping groove. Due to the manufacturing factors, there is a large tolerance in the thickness and surface of the silicon-based BDD plate 1, and the thickness tolerance is also large in different batches, which brings difficulties to the clamping groove connection of the aluminum plate 2. In addition, the direct connection of the silicon-based BDD plate 1 and the aluminum plate 2 causes a large conductive resistance. In order to overcome the above problems, the silicon-based BDD plate 1 is provided with a conductive silver glue 3 at one end facing the aluminum plate 2, and a copper foil 4 is arranged outside the conductive silver glue 3; the aluminum plate 2 is provided with an aluminum plate clamping groove 201 at one side facing the silicon-based BDD plate 1, and one end of the silicon-based BDD plate 1 with the conductive silver glue 3 and the copper foil 4 is inserted into the aluminum plate clamping groove 201. Through the above technical solution, the silicon-based BDD plate 1 is connected with the copper foil 4 through the conductive silver glue 3, and then connected with the aluminum plate 2 with a clamping groove, forming a conductive circuit of silicon-based BDD plate 1→ conductive silver glue 3→ copper foil 4→ aluminum plate 2. Compared with the traditional connection mode of the silicon-based BDD electrode and the conductive female rod, the conductive resistance in the conductive circuit can be greatly reduced, the conductive efficiency can be improved, the power consumption can be reduced, and the operation cost can be reduced, thereby solving the problem of high conductive resistance of the silicon-based BDD electrode. At the same time, when the copper foil 4 is selected, the copper foil 4 with a suitable thickness can be selected according to the thickness difference between the silicon-based BDD plate 1 and the aluminum plate clamping groove 201, so that the connection of the silicon-based BDD plate 1 and the aluminum plate 2 is more stable, and the problem of inconsistent thickness tolerance of the silicon-based BDD plate 1 is solved.

[0057] Referring to Figure 2 As shown in FIG. 1, in some embodiments, the aluminum plate 2 is provided with a conductive connecting block 202 at the side away from the aluminum plate clamping groove 201. The setting of the conductive connecting block 202 can facilitate the electrical connection between the silicon-based BDD electrode plate and the subsequent second bus conductive block, and then facilitate the electrical connection with the subsequent bus connecting copper bar. The conductive connecting block 202 is provided with a conductive connecting hole 203. The setting of the conductive connecting hole 203 facilitates the compression and fixation of the conductive connecting block 202 and the second bus conductive block by the subsequent second conductive fastening screw, so as to avoid the loosening affecting the conductive effect.

[0058] Referring to Figure 1 and Figure 3 As shown in FIG. 1, in some embodiments, the silicon-based BDD plate 1 is provided with a first sealing ring 5 near the aluminum plate 2, and the silicon-based BDD plate 1 is provided with a first pressing strip 6 at the side away from the aluminum plate 2. The setting of the first sealing ring 5 and the first pressing strip 6 can realize the sealing effect of the reaction interval of the silicon-based BDD electrode plate and the titanium-based electrode plate in cooperation with the subsequent second sealing ring and the second pressing strip. Embodiment 2

[0059] Based on the silicon-based BDD electrode plate provided in Embodiment 1, Embodiment 2 further provides a preparation method of the silicon-based BDD electrode plate, comprising the following steps:

[0060] Step 101: A layer of conductive silver paste 3 is coated on the connection part of the silicon-based BDD plate 1, and the solid content of the conductive silver paste 3 is in the range of 70-85%. After uniform coating, it is static for 2-5 minutes. It should be noted that before this step, preparation work needs to be done, which includes: visually checking and judging the tightness and gap of the joint between the silicon-based BDD plate 1 and the aluminum plate 2; selecting a copper foil 4 with appropriate thickness according to the joint gap and tightness, and making the copper foil 4 into a U-shaped groove with a length corresponding to the width of the silicon-based BDD plate 1.

[0061] Step 102: The copper foil 4 is wrapped around the conductive silver paste 3 coating part of the silicon-based BDD plate 1 and is flattened and pressed tightly. The copper foil 4 in this step is the U-shaped copper foil 4 piece made in the aforementioned preparation work to match the edge shape of the silicon-based BDD plate 1 and the shape of the aluminum plate clamping groove 201.

[0062] Step 103: Insert the silicon-based BDD plate 1 with conductive silver paste 3 and copper foil 4 into the aluminum plate clamping groove 201 of the aluminum plate 2. When inserting, pay attention to the end of the aluminum plate 2 being flush with the silicon-based BDD plate 1. If there is a card position and glue leakage or bubbling, etc., it needs to be pulled out as soon as possible, clean the residue of the card position, the bubbling place, and add silver glue, etc., and then reinsert.

[0063] Step 104: Put the connected silicon-based BDD plate 1 and aluminum plate 2 into a heating furnace for heating and curing. The curing temperature is 120-150 degrees, the curing time is 0.5-1 hour, and the cured product is taken out.

[0064] Step 105: Detect the connection resistance of the silicon-based BDD plate 1. If it meets the requirements, it is a qualified module. For example, the resistance value is required to be less than or equal to 15 mΩ. If it reaches this range, it is determined as a qualified module. Finally, for the qualified module, a first sealing ring 5 is installed near the aluminum plate 2, and a first pressing strip 6 is installed on the side away from the aluminum plate 2. The finished silicon-based BDD electrode plate is shown in Figure 1 .

[0065] Through the above technical solution, the copper foil wraps the conductive silver paste to connect with the aluminum plate, which solves the problems of assembly error and contact resistance, and improves the conductivity efficiency by more than 30%. Embodiment 3

[0066] Embodiment 3 provides a titanium-based electrode plate used in cooperation with the silicon-based BDD electrode plate in Embodiments 1-2.

[0067] Reference Figure 5As shown, in some embodiments, the titanium-based electrode plate includes a titanium-based plate 9, a second sealing ring 10, and a second pressing strip 11. Among them, the titanium-based plate 9 is a square titanium-based cathode plate; one side of the titanium-based plate 9 is provided with an extension block 901 which directly extends from one side of the titanium-based plate 9 and can be an integrated structure; one side of the extension block 901 is provided with a conductive gasket 12. The extension block 901 and the conductive gasket 12 can facilitate the electrical connection between the titanium-based electrode plate and the subsequent first bus conductive block, and then facilitate the electrical connection with the subsequent bus connecting copper bar, and ensure the stability of the electrical connection. The second sealing ring 10 is arranged on the titanium-based plate 9 close to the conductive gasket 12, and the second pressing strip 11 is arranged at one end of the titanium-based plate 9 away from the conductive gasket 12; the second sealing ring 10 and the second pressing strip 11 can cooperate with the first sealing ring 5 and the first pressing strip 6 to realize the sealing effect of the reaction area of the silicon-based BDD electrode plate and the titanium-based electrode plate, and play a sealing and corrosion-resistant role. Embodiment 4

[0068] Based on the silicon-based BDD electrode plate of Embodiment 1-Embodiment 2 and the titanium-based electrode plate of Embodiment 3, this embodiment 4 provides a reactor module.

[0069] Reference Figure 6 and Figure 7 As shown, in some embodiments, the reactor module includes PVC side plates 7 and the above-mentioned silicon-based BDD electrode plate and the above-mentioned titanium-based electrode plate, wherein: the PVC side plates 7 are provided with two and are oppositely arranged, and the two PVC side plates 7 are connected through connecting bolts 8; specifically, the material of the PVC side plate 7 is polyvinyl chloride (Polyvinylchloride, abbreviated as: PVC), which is square, and the connecting bolts 8 can be provided with four, which are respectively located at the upper left and right corners of the PVC side plate 7. The silicon-based BDD electrode plate and the titanium-based electrode plate are both provided with a plurality of, and the silicon-based BDD electrode plate and the titanium-based electrode plate are alternately arranged between the two PVC side plates 7. By adopting the above technical solution, the electrode plate disc type assembly is realized, the electrode plate can be replaced at any time, and the service life of the reactor module is 2-3 times longer than that of the traditional reactor.

[0070] Reference Figure 6 and Figure 7As shown, in some embodiments, a plurality of titanium-based electrode plates are arranged between the extension block 901 and the conductive pad 12, and a plurality of first bus conductive blocks 15 are arranged between the extension block 901 and the conductive pad 12. The first bus conductive block 15 can be two, and the two first bus conductive blocks 15 are spaced apart. The extension block 901, the conductive pad 12, and the first bus conductive block 15 are fixed by the first conductive fastening bolt 16. A plurality of silicon-based BDD electrode plates are arranged between the conductive connecting blocks 202, and a plurality of second bus conductive blocks 17 are arranged between the conductive connecting blocks 202. The second bus conductive block 17 can be two, and the two second bus conductive blocks 17 are spaced apart. The conductive connecting block 202 and the second bus conductive block 17 are fixed by the second conductive fastening bolt 18. Through the above technical solution, the electrical connection between the titanium-based electrode plate and the first bus conductive block 15 and the electrical connection between the silicon-based BDD electrode plate and the second bus conductive block 17 can be realized, and then the electrical connection with the bus connection copper bar assembly can be realized. The extension block 901, the conductive pad 12, and the first bus conductive block 15 are fixed by the first conductive fastening bolt 16, and the conductive connecting block 202 and the second bus conductive block 17 are fixed by the second conductive fastening bolt 18, which can enhance the stability of the conductive connection.

[0071] Reference Figure 6 and Figure 7 As shown, in some embodiments, a plurality of titanium-based electrode plates are arranged between the extension block 901 and the conductive pad 12, and a plurality of first bus conductive blocks 15 are arranged between the extension block 901 and the conductive pad 12. The first bus conductive block 15 can be two, and the two first bus conductive blocks 15 are spaced apart. The extension block 901, the conductive pad 12, and the first bus conductive block 15 are fixed by the first conductive fastening bolt 16. A plurality of silicon-based BDD electrode plates are arranged between the conductive connecting blocks 202, and a plurality of second bus conductive blocks 17 are arranged between the conductive connecting blocks 202. The second bus conductive block 17 can be two, and the two second bus conductive blocks 17 are spaced apart. The conductive connecting block 202 and the second bus conductive block 17 are fixed by the second conductive fastening bolt 18. Through the above technical solution, the electrical connection between the titanium-based electrode plate and the first bus conductive block 15 and the electrical connection between the silicon-based BDD electrode plate and the second bus conductive block 17 can be realized, and then the electrical connection with the bus connection copper bar assembly can be realized. The extension block 901, the conductive pad 12, and the first bus conductive block 15 are fixed by the first conductive fastening bolt 16, and the conductive connecting block 202 and the second bus conductive block 17 are fixed by the second conductive fastening bolt 18, which can enhance the stability of the conductive connection.

[0072] Reference Figure 8 and Figure 9 As shown, in some embodiments, the first pressing strip 6 includes a first pressing strip through hole 601 arranged at the upper and lower ends, a first clamping groove 602 arranged towards the silicon-based BDD plate 1, and a first sealing groove 603 and a second sealing groove 604 on the two side edges adjacent to the first clamping groove 602. Figure 10As shown, the first pressing strip 6 cooperates with the second sealing ring 10 to seal, specifically, the first clamping groove 602 of the first pressing strip 6 is used to clamp the silicon-based BDD plate 1, and the first sealing groove 603 and the second sealing groove 604 are respectively used to clamp the second sealing ring 10 on the adjacent titanium-based plate 9, that is, each first pressing strip 6 clamps half of the two adjacent second sealing rings 10, and finally all the first pressing strips 6 are tightly connected through the first pressing strip through hole 601 and the first pressing strip fastening bolt 14 to complete the sealing connection on the side of the first pressing strip 6. The second sealing ring 10 can be made of fluoroplastic material to ensure sealing and corrosion resistance.

[0073] Referring to Figure 11 and Figure 12 As shown, in some embodiments, the second pressing strip 11 includes a second pressing strip through hole 1101 arranged at the upper and lower ends, a second clamping groove 1102 arranged towards the titanium-based plate 9, and a third sealing groove 1103 and a fourth sealing groove 1104 on the two sides adjacent to the second clamping groove 1102. Referring to Figure 13 As shown, the second pressing strip 11 cooperates with the first sealing ring 5 to seal. Specifically, the second clamping groove 1102 of the second pressing strip 11 is used to clamp the titanium-based plate 9, and the third sealing groove 1103 and the fourth sealing groove 1104 are respectively used to clamp the first sealing ring 5 on the adjacent silicon-based BDD plate 1, that is, each second pressing strip 11 clamps half of the two adjacent first sealing rings 5, and finally all the second pressing strips 11 are tightly connected through the second pressing strip through hole 1101 and the second pressing strip fastening bolt 13 to complete the sealing connection on the side of the second pressing strip 11. The first sealing ring 5 can be made of fluoroplastic material to ensure sealing and corrosion resistance.

[0074] By adopting the above technical solutions, the sealing and corrosion prevention effect of the reaction area of the silicon-based BDD electrode plate and the titanium-based electrode plate can be achieved. And by fastening and connecting the first pressing strip 6 and the second pressing strip 11 through the first pressing strip fastening bolt 13 and the second pressing strip fastening bolt 14, the sealing and corrosion prevention effect can be enhanced.

[0075] In addition, the conductive connection and the sealing connection positions are different, and are connected through different bolts respectively, so that the sealing connection and the conductive connection can be separated and dispersed, the concentrated stress can be reduced, the stress on the silicon-based BDD plate can be reduced, and thus the brittleness problem of the silicon-based material can be solved.

[0076] In some embodiments, the silicon-based BDD plate 1 is 240x130x3mm (for ease of understanding, this specification is used as an example for introduction, and the specific specification can be flexibly adjusted according to actual needs; the specific data value is the same below), the titanium base plate 9 is 240x130x2mm; the aluminum plate 2 is a split type clamping groove aluminum plate, the groove width is 3.1mm; the middle with ear holes is convenient for connection. Preferably, the silver content in the conductive silver adhesive 3 is 70-85%, the copper foil thickness is 0.01-0.06mm; the module size is 420x200x200mm standard unit, which can be combined by bolts; the PVC side plate 7 thickness is 12-20mm, which has corrosion and insulation functions; the assembly tolerance is controlled within the range of 0.05-0.2mm; a multi-level conductive structure is adopted: silicon-based BDD plate 1→conductive silver adhesive 3→copper foil 4→aluminum plate 2→first bus conductive block 15(second bus conductive block 17). Anode side stress analysis: bolt-PVC side plate 7-second pressing strip 11-first sealing ring 5-silicon-based BDD plate 1; cathode side stress analysis: bolt-PVC side plate 7-first pressing strip 6-second sealing ring 10-titanium base plate 9. Example 5

[0077] Based on the reactor module provided in Example 4, this Example 5 provides an electrochemical reactor based thereon.

[0078] Reference Figure 14 As shown, the electrochemical reactor comprises a water inlet device 19, a water outlet device 20, a bus connection copper bar 21, and a plurality of reactor modules 22 as claimed in any one of claims 6-9, wherein: a plurality of reactor modules 22 are stacked between the water inlet device 19 and the water outlet device 20; the bus connection copper bar 21 is provided with two and is inserted from both sides of the water outlet device 20, the bus connection copper bar 21 on one side is electrically connected with the first bus conductive block 15 of the reactor module, and the bus connection copper bar 21 on the other side is electrically connected with the second bus conductive block 17 of the reactor module. When working, the reactor is powered by the bus connection copper bar 21, water is fed from the water inlet device 19, and water is discharged from the water outlet device 20 after reaction; the specific structure of the water inlet device 19, the water outlet device 20, and the bus connection copper bar 21 can be selected from any existing technology, which will not be described here. Through the above technical solution, the reactor can be flexibly assembled as needed, which can be connected in series or in parallel, a single group can realize the stacking of 5-8 or even more reactor modules, high-density integration, and container integration assembly, which has the effect of flexible application.

[0079] Reference Figure 6 As shown, the PVC side plate 7 is provided with a plurality of mounting holes 701 on the upper and lower sides, and the mounting holes 701 and connecting bolts can realize the stacking and installation of a plurality of reactor modules 22.

[0080] ReferenceFigure 15 As shown, in some embodiments, the shell of the reactor module 22 includes, in addition to the two oppositely arranged PVC side plates 7, two oppositely arranged support plates 23, which can also be PVC plates, and the two support plates 23 and the two PVC side plates 7 form a square to form a corrosion-resistant shell, wherein the inner side of the PVC side plate 7 is provided with a positioning groove 702 at the connection with the support plate 23, and the two sides of the support plate 23 are respectively clamped in the positioning grooves 702 of the two PVC side plates 7. Wherein, one end of the support plate 23 is lower than a part of the end face of the PVC side plate 7, and the other end extends out of a part of the end face of the PVC side plate 7, and the length of the lower part and the extended part is the same. In this way, when a plurality of reactor modules 22 are stacked, the positioning and installation can be easily completed through the support plate 23 and the positioning groove 702, and the connection between the upper and lower reactor modules 22 after stacking is more stable.

[0081] In summary, the silicon-based BDD electrode plate, the reactor module and the electrochemical reactor provided by the present application effectively solve the problem of high conductive connection resistance of the silicon-based electrode; also solve the problem of fragile assembly of the assembled crimped electrode plate; also solve the problem of pre-stress caused by assembly error; also solve the problem of assembly sealing, and realize modular design and economic assembly. Through the scheme of the present application, the tantalum and niobium pressing sheet for silicon-based conductive connection is reduced, the assembly cost is reduced, the traditional tantalum or niobium pressing sheet accounts for 20% of the assembly cost (tantalum and niobium are expensive, and other metals are easy to corrode under high current), and the conductive resistance is also reduced, the operating cost is reduced, and according to the calculation, the cost of ton of water treatment can be reduced by 0.25 degrees of electricity for every 10 mΩ of resistance reduction. Embodiment 6

[0082] Based on the schemes provided in Embodiments 1-5, this embodiment 6 further verifies the effects of the schemes through a plurality of specific examples.

[0083] Example 1: A silicon-based BDD plate 1 with a size of 130mmx240mmx3mm and a thickness tolerance of ±0.05mm is prepared; an aluminum plate 2 with an aluminum plate clamping groove 201 is prepared; conductive silver paste 3 (thickness 0.1-0.3mm) is coated on the connection area between the silicon-based BDD plate 1 and the aluminum plate clamping groove 201; copper foil 4 (0.01~0.06mm thick) is laid on the conductive silver paste 3 and heated and cured; PVC side plates 7 are assembled and fixed with M10 bolts; and bus bars are connected through M12 conductive bolts. After the reactor is installed, the conductive resistance is tested, and the results are shown in Table 1.

[0084] Example 2: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; do not apply conductive silver paste 3 in the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201; lay copper foil 4 (0.01-0.06mm thick) on silicon-based BDD plate 1, heat and cure; assemble PVC side plate 7, fixed with M10 bolts; connect bus bars through M12 conductive bolts. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 1.

[0085] Example 3: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; apply conductive silver paste 3 (thickness 0.1-0.3mm) in the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201; do not lay copper foil 4; assemble PVC side plate 7, fixed with M10 bolts; connect bus bars through M12 conductive bolts. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 1.

[0086] Example 4: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; do not apply conductive silver paste 3 and wrap copper foil 4 in the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201, directly hard connect; assemble PVC side plate 7, fixed with M10 bolts; connect bus bars through M12 conductive bolts. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 1.

[0087] Table 1:

[0088]

[0089] As can be seen from Table 1, the average value of the measured conductive resistance of Example 1 is the smallest, which verifies the technical effect of reducing the conductive resistance of the anode-silver paste-copper foil-aluminum groove (i.e. silicon-based BDD plate 1→ conductive silver paste 3→ copper foil 4→ aluminum plate 2) compared to other connection methods.

[0090] The different examples are described below by the different processes of conductive silver paste 3.

[0091] Example 5: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; coat conductive silver adhesive 3 on the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201, coating thickness 0.1-0.3mm; lay copper foil 4 (0.01~0.06mm thick) on conductive silver adhesive 3, heat and cure; assemble PVC side plate 7, fixed with M10 bolts; connect busbar through M12 conductive bolts. Conductive silver adhesive 3 and construction process 1: 50% < solid content ≤ 70%, heating temperature 100°, heating time 1h. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 2.

[0092] Example 6: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; coat conductive silver adhesive 3 on the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201, coating thickness 0.1-0.3mm; lay copper foil 4 (0.01~0.06mm thick) on conductive silver adhesive 3, heat and cure; assemble PVC side plate 7, fixed with M10 bolts; connect busbar through M12 conductive bolts. Conductive silver adhesive 3 and construction process 2: 70% < solid content ≤ 85%, heating temperature 120°, heating time 1h. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 2.

[0093] Example 7: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; coat conductive silver adhesive 3 on the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201, coating thickness 0.1-0.3mm; lay copper foil 4 (0.01~0.06mm thick) on conductive silver adhesive 3, heat and cure; assemble PVC side plate 7, fixed with M10 bolts; connect busbar through M12 conductive bolts. Conductive silver adhesive 3 and construction process 3: 85% < solid content ≤ 90%, heating temperature 150°, heating time 0.5h. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 2.

[0094] Example 8: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; coat conductive silver paste 3 on the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201, coating thickness 0.1-0.3mm; lay copper foil 4 (0.01~0.06mm thick) on conductive silver paste 3, heat and cure; assemble PVC side plate 7, fixed with M10 bolts; connect bus bar through M12 conductive bolts. Conductive silver paste 3 and construction process 4: 70%<solid content<85%, heating temperature 150°, heating time 0.5h. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 2.

[0095] Example 9: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare aluminum plate 2 with aluminum plate clamping groove 201; coat conductive silver paste 3 on the connection area of silicon-based BDD plate 1 and aluminum plate clamping groove 201, coating thickness 0.1-0.3mm; lay copper foil 4 (0.01~0.06mm thick) on conductive silver paste 3, heat and cure; assemble PVC side plate 7, fixed with M10 bolts; connect bus bar through M12 conductive bolts. Conductive silver paste 3 and construction process 5: silver powder, heating temperature 120°, heating time 1h. After the reactor is installed, conductive resistance test is performed, and the results are shown in Table 2.

[0096] Table 2:

[0097]

[0098] As can be seen from Table 2, the average value of the conductive resistance measured in Example 6 is the smallest, that is, when the conductive silver paste 3 parameters are 70%<solid content≤85%, the construction process is: heating temperature 120°, heating time 1h, the average value of the conductive resistance obtained is the smallest, and the technical effect is the best. Therefore, preferably, 70%<solid content≤85% conductive silver paste 3 is used, and a construction process of heating temperature 120° and heating time 1h is used to make the silicon-based BDD electrode plate.

[0099] Next, the examples of the present application scheme are compared and explained with the examples of the prior art.

[0100] Example 10: Prepare silicon-based BDD plate 1, size 130mm x 240mm x 3mm, thickness tolerance ±0.05mm; prepare silicon-based BDD plate 1 connection using 5~10mm wide corrosion-resistant conductive metal (such as: tantalum sheet, niobium sheet) and conductive body compression connection; the conductive body is fixed and compressed by bolts, and the conductive body can be made of titanium material or externally corrosion-resistant copper material or aluminum material. The shell is packaged with polypropylene (Polypropylene, abbreviated as: PP) material or PVC material; external conductive bus bar. The conductive effect is shown in Table 3.

[0101] Table 3:

[0102]

[0103] As can be seen from Table 3, the conductive resistance of Example 1 of the scheme of the application is significantly reduced compared with Example 10 of the prior art scheme, which shows that the scheme of the application solves the problem of high conductive resistance of the silicon-based BDD electrode in the prior art, can improve the conductive efficiency, reduce the power consumption and reduce the operating cost.

[0104] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A reactor module, characterized by, Including silicon-based BDD electrode plate, titanium-based electrode plate and PVC side plate (7), wherein: the PVC side plate (7) is provided with two and opposite, two the PVC side plate (7) is connected by connecting bolt (8); The silicon-based BDD electrode plate and the titanium-based electrode plate are provided with multiple, and the silicon-based BDD electrode plate and the titanium-based electrode plate are alternately arranged between two the PVC side plate (7); The silicon-based BDD electrode plate includes silicon-based BDD plate (1) and aluminum plate (2), the silicon-based BDD plate (1) is provided with conductive silver glue (3) to one end of the aluminum plate (2), and the conductive silver glue (3) is provided with copper foil (4) outside; The aluminum plate (2) is provided with aluminum plate clamping groove (201) to one side of the silicon-based BDD plate (1), and one end of the silicon-based BDD plate (1) with the conductive silver glue (3) and the copper foil (4) is inserted into the aluminum plate clamping groove (201); The aluminum plate (2) is provided with conductive connecting block (202) on the side away from the aluminum plate clamping groove (201), and the conductive connecting block (202) is provided with conductive connecting hole (203); The silicon-based BDD plate (1) is provided with first sealing ring (5) at the side close to the aluminum plate (2), and the silicon-based BDD plate (1) is provided with first pressing strip (6) at the side away from the aluminum plate (2); The titanium-based electrode plate includes titanium-based plate (9), second sealing ring (10) and second pressing strip (11), one side of the titanium-based plate (9) is provided with extension block (901), one side of the extension block (901) is provided with conductive gasket (12), the second sealing ring (10) is arranged on the titanium-based plate (9) close to the conductive gasket (12), and the second pressing strip (11) is arranged on the titanium-based plate (9) away from the conductive gasket (12) one end; The second pressing strip (11) of multiple titanium-based electrode plates is arranged side by side between two the PVC side plate (7), and is compressed and fixed by second pressing strip fastening bolt (13); The first pressing strip (6) of multiple silicon-based BDD electrode plates is arranged side by side between two the PVC side plate (7), and is compressed and fixed by first pressing strip fastening bolt (14); The first pressing strip (6) is sealed with the second sealing ring (10), and the second pressing strip (11) is sealed with the first sealing ring (5); The extension block (901) and the conductive gasket (12) of multiple titanium-based electrode plates are provided with a plurality of first bus conductive blocks (15), and the extension block (901), the conductive gasket (12) and the first bus conductive block (15) are compressed and fixed by first conductive fastening bolt (16); A plurality of second bus conductive blocks (17) are arranged between the conductive connecting block (202) of multiple silicon-based BDD electrode plates, and the conductive connecting block (202) and the second bus conductive block (17) are compressed and fixed by second conductive fastening bolt (18).

2. A method for producing a silicon-based BDD electrode plate for producing a silicon-based BDD electrode plate as claimed in claim 1, characterized in that, Including: Coat a layer of conductive silver glue (3) on the connection of the silicon-based BDD plate (1), the conductive silver glue (3) contains solid content in the range of 70-85%, after uniform coating, stand still for 2-5 min; Wrap the copper foil (4) on the conductive silver glue (3) coated part of the silicon-based BDD plate (1) and flatten and press tightly with force; Insert the silicon-based BDD plate (1) with conductive silver glue (3) and copper foil (4) into the aluminum plate clamping groove (201) of the aluminum plate (2); Put the connected silicon-based BDD plate (1) and aluminum plate (2) into the heating furnace for heating and curing, the curing temperature is 120-150 degrees, the curing time is 0.5-1 h, and after curing, take out; Detect the connection resistance of the silicon-based BDD plate (1), and it is qualified after meeting the requirements.

3. The method of claim 2, wherein the silicon-based BDD electrode plate is prepared by the steps of: Also includes: For qualified modules, install a first sealing ring (5) near the aluminum plate (2) and install a first pressing strip (6) on the side away from the aluminum plate (2).

4. An electrochemical reactor characterized by, The water inlet device (19), the water outlet device (20), the bus connection copper bar (21) and a plurality of reactor modules as claimed in claim 1 are included, wherein: a plurality of reactor modules are stacked between the water inlet device (19) and the water outlet device (20); the bus connection copper bar (21) is provided with two and is inserted from both sides of the water outlet device (20), the bus connection copper bar (21) on one side is connected with the first bus conductive block (15) of the reactor module, and the bus connection copper bar (21) on the other side is connected with the second bus conductive block (17) of the reactor module.

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