Voltage threshold detection circuit based on double PN junction temperature compensation structure
By using a voltage threshold detection circuit based on a double PN junction temperature compensation structure, the problem of fluctuation in existing voltage detection circuits across the entire temperature range is solved, achieving temperature stability and cost reduction, and adapting to the requirements of high input voltage.
Patent Information
- Application Number
- CN202511347408.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-19
- Publication Date
- 2025-11-07
AI Technical Summary
Existing voltage detection circuits exhibit significant fluctuations across the entire temperature range, making it difficult to meet the precise detection requirements of wide-temperature products. Furthermore, the output changes drastically at high input voltages, resulting in high costs. Current technologies suffer from both a small threshold range and high cost.
A voltage threshold detection circuit based on a double PN junction temperature compensation structure is adopted, including a target voltage adjustment module, an input temperature detection module, a temperature co-compensation module, and a signal shaping and output impedance matching module. The circuit detects external temperature changes through the temperature curve of the PN junction, adjusts the target voltage to be detected, and achieves the temperature stability of the circuit.
This achieves improved circuit temperature stability and expanded threshold range under high input voltage, reduces costs, and meets the precise testing requirements of wide-temperature products.
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Figure CN120908511A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of voltage detection circuit, in particular to a voltage threshold detection circuit based on double PN junction temperature compensation structure. BACKGROUND
[0002] For the voltage detection circuit, the prior art is commonly to use simple discrete devices for voltage detection, or to use high-cost integrated chips for processing; the circuit structure using simple discrete devices for voltage detection usually applies single transistor PN junction structure, the voltage detection circuit of this structure has large fluctuation in full temperature range, which is difficult to meet the accurate detection requirements of wide temperature products; and due to the high cost of integrated chips, the threshold range is small, so the circuit structure using integrated chips for voltage detection also has limitations, and since the voltage range to be detected is wider and the output change is larger at high input voltage, the problem of exceeding the preset voltage threshold is more obvious in the circuit operating temperature range, therefore, the existing voltage detection circuit has more obvious defects under high input voltage. SUMMARY
[0003] In view of the above technical problems, the technical scheme adopted by the present application is: According to one aspect of the present application, a voltage threshold detection circuit based on double PN junction temperature compensation structure is provided, comprising: A target voltage adjustment module for controlling the externally input target voltage to be detected; An input temperature detection module connected in series in the target voltage adjustment module, for detecting the temperature of the external environment through the temperature curve of the PN junction, and adjusting the target voltage to be detected according to the temperature change of the external environment; A temperature cooperative compensation module connected with the target voltage adjustment module, for adjusting the negative temperature coefficient of the circuit according to the temperature change of the external environment, to realize the temperature stability of the circuit voltage; A signal shaping and output impedance matching module connected with the temperature cooperative compensation module, for shaping the voltage signal output by the temperature cooperative compensation module, and matching the impedance of the lower receiving circuit connected with the signal shaping and output impedance matching module.
[0004] In an exemplary embodiment of the present application, the target voltage adjustment module includes a resistor R1, a capacitor C1, a double PN junction D1 and a resistor R2; One end of the resistor R1 is connected to the externally input target voltage to be detected, the other end of the resistor R1 is connected to the capacitor C1 and the double PN junction D1, and the double PN junction D1 is connected to the resistor R2.
[0005] In an exemplary embodiment of the present application, the double PN junction D1 comprises a diode 13 and a diode 23, the negative electrode of the diode 13 is connected with the negative electrode of the diode 23, the negative electrode of the diode 13 and the negative electrode of the diode 23 are both connected with the resistor R2, the positive electrode of the diode 13 is connected with the temperature cooperative compensation module, and the positive electrode of the diode 23 is connected with the resistor R1 and the capacitor C1.
[0006] In an exemplary embodiment of the present application, the input temperature detection module comprises the diode 23.
[0007] In an exemplary embodiment of the present application, the temperature cooperative compensation module comprises a triode Q1, a resistor R3, a resistor R2 and a double PN junction D1. The triode Q1 is connected with the double PN junction D1, the resistor R3 and the input voltage of the internal circuit board.
[0008] In an exemplary embodiment of the present application, the base of the triode Q1 is connected with the positive electrode of the diode 13 of the double PN junction D1, the collector of the triode Q1 is connected with the resistor R3 and the signal shaping and output impedance matching module, and the emitter of the triode Q1 is connected with the input voltage of the internal circuit board.
[0009] In an exemplary embodiment of the present application, the signal shaping and output impedance matching module comprises a resistor R4, a resistor R5, a resistor R6 and a triode Q2. One end of the resistor R4 is connected with the triode Q1, the other end of the resistor R4 is connected with the triode Q2, the triode Q2 is connected with the resistor R5 and the resistor R6.
[0010] In an exemplary embodiment of the present application, one end of the resistor R4 is connected with the collector of the triode Q1, and the other end of the resistor R4 is connected with the base of the triode Q2.
[0011] In an exemplary embodiment of the present application, the emitter of the triode Q2 is connected with the input voltage of the internal circuit board, and the collector of the triode Q2 is connected with the resistor R5 and the resistor R6.
[0012] In an exemplary embodiment of the present application, the resistor R6 is connected with the INT pin of the internal circuit board.
[0013] The present application has at least the following beneficial effects: The voltage threshold detection circuit based on the double-PN junction temperature compensation structure comprises a target voltage adjusting module, an input temperature detecting module, a temperature cooperative compensation module and a signal shaping and output impedance matching module. BRIEF DESCRIPTION OF DRAWINGS
[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort.
[0015] Figure 1 The circuit principle diagram of the voltage threshold detection circuit based on the double-PN junction temperature compensation structure provided by the embodiment of the present application; Figure 2 The temperature curve schematic diagram of the double-PN junction D1 provided by the embodiment of the present application. DETAILED DESCRIPTION
[0016] The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present application.
[0017] The present application provides a voltage threshold detection circuit based on a double-PN junction temperature compensation structure, as shown in the figure, comprising a target voltage adjusting module, an input temperature detecting module, a temperature cooperative compensation module and a signal shaping and output impedance matching module. Figure 1 The target voltage adjusting module is used to control the externally input target voltage to be detected.
[0018] The target voltage adjusting module is used for controlling an externally input target voltage to be detected; the input temperature detecting module is connected in series in the target voltage adjusting module, and is used for detecting the temperature of an external environment through a temperature curve of a PN junction, and adjusting the target voltage to be detected according to the temperature change of the external environment; the temperature cooperative compensation module is connected with the target voltage adjusting module, and is used for adjusting the negative temperature coefficient of the circuit according to the temperature change of the external environment, so as to realize the temperature stability of the circuit voltage; and the signal shaping and output impedance matching module is connected with the temperature cooperative compensation module, and is used for shaping the voltage signal output by the temperature cooperative compensation module, and matching the impedance of a lower receiving circuit connected with the signal shaping and output impedance matching module.
[0019] Further, the target voltage adjusting module comprises a resistor R1, a capacitor C1, a double PN junction D1 and a resistor R2, one end of the resistor R1 is connected with the externally input target voltage to be detected (namely VDD-HV in Figure 1 , commonly 12V or 24V voltage), the other end of the resistor R1 is connected with the capacitor C1 and the double PN junction D1, and the double PN junction D1 is connected with the resistor R2.
[0020] The double PN junction D1 comprises a diode 13 (1-3 PN junction of D1 in Figure 1 ) and a diode 23 (2-3 PN junction of D1 in Figure 1 ), the negative electrode of the diode 13 is connected with the negative electrode of the diode 23, the negative electrode of the diode 13 and the negative electrode of the diode 23 are both connected with the resistor R2, the positive electrode of the diode 13 is connected with the temperature cooperative compensation module, and the positive electrode of the diode 23 is connected with the resistor R1 and the capacitor C1.
[0021] The target voltage adjusting module controls the target voltage to be detected through the voltage ratio of the resistor R1, the resistor R2 and the double PN junction D1, specifically, as shown in Figure 1 , Figure 1 , V1-V7 are voltage values at each node in the circuit, V3=(V1-V D1(Vf2-3) )×(R2 / (R1+R2)); V D1(Vf2-3) is the forward voltage of the diode 23, R2 is the resistance value of the resistor R2, and R1 is the resistance value of the resistor R1.
[0022] The capacitor C1 in the target voltage adjusting module is used for maintaining the voltage signal stable and removing high-frequency interference.
[0023] Further, the input temperature detecting module comprises the diode 23, through the consistency process manufacturing of the double PN junction structure of the double PN junction D1, the voltage can be changed synchronously with the temperature, that is, V D1(Vf1-3) =V D1(Vf2-3) , V D1(Vf1-3) is the forward voltage of the diode 13.
[0024] Further, the temperature compensation module comprises a triode Q1, a resistor R3, a resistor R2 and a double PN junction D1, the triode Q1 is connected with the double PN junction D1, the resistor R3, an input voltage (namely VDD-LV in Figure 1 , such as an MCU 3.3V voltage) of an internal circuit board, a base of the triode Q1 is connected with a positive electrode of a diode 13 of the double PN junction D1, a collector of the triode Q1 is connected with the resistor R3 and a signal shaping and output impedance matching module, and an emitter of the triode Q1 is connected with the input voltage of the internal circuit board.
[0025] As shown in Figure 2 , when the temperature changes, a negative temperature coefficient of a forward voltage of a diode 23 of the double PN junction D1 and a negative temperature coefficient of VEB (a voltage difference between an emitter and a base) of the triode Q1 are partially offset (specifically: since the double PN junction D1 and the triode Q1 are two electronic devices, and there is a difference in the temperature effect of the PN junctions thereof, therefore, when the same temperature changes, the change amount of VD1 (Vf2-3) and VEB of the triode Q1 is not the same, thereby causing partial offset, that is, the absolute value of the smaller one of VD1 (Vf2-3) and VEB of the triode Q1 is offset), so as to realize the temperature stability of the base bias voltage of the triode Q1. Meanwhile, in the design of the temperature compensation module, a low temperature drift device suitable for small signal application is selected, for example: when the temperature increases by 50℃, the forward voltage of the double PN junction D1 (the negative temperature coefficient is -2mV / ℃) decreases by 100mV; similarly, the VEB of the triode Q1 (the negative temperature coefficient is -1.5mV / ℃) will decrease by 75mV, therefore, the total bias change is only 25mV.
[0026] Further, the signal shaping and output impedance matching module comprises a resistor R4, a resistor R5, a resistor R6 and a triode Q2, one end of the resistor R4 is connected with the collector of the triode Q1, the other end of the resistor R4 is connected with the base of the triode Q2, the emitter of the triode Q2 is connected with the input voltage of the internal circuit board, the collector of the triode Q2 is connected with the resistor R5 and the resistor R6, and the resistor R6 is connected with an INT pin (an interrupt or query pin of an MCU micro control unit) of the internal circuit board.
[0027] The signal shaping and output impedance matching module is used to adjust the output impedance, so as to reduce the error introduced by the next stage circuit (a circuit connected with a GPIO (General-purpose input / output) of an MCU micro control unit), so as to further enhance the temperature stability.
[0028] The voltage threshold detection circuit based on the double PN junction temperature compensation structure of the application, including target voltage adjustment module, input temperature detection module, temperature coordination compensation module, and signal shaping and output impedance matching module, the target voltage adjustment module is used for controlling the external input of the target voltage to be detected, the input temperature detection module is connected in series in the target voltage adjustment module, which is used for detecting the temperature of the external environment through the temperature curve of the PN junction, and adjusting the target voltage to be detected according to the temperature change of the external environment, the temperature coordination compensation module is connected with the target voltage adjustment module, which is used for adjusting the negative temperature coefficient of the circuit according to the temperature change of the external environment, so as to realize the temperature stability of the circuit voltage, the signal shaping and output impedance matching module is connected with the temperature coordination compensation module, which is used for shaping the voltage signal output by the temperature coordination compensation module, and matching the impedance of the lower receiving circuit connected with the signal shaping and output impedance matching module, by adopting the circuit structure of double PN junction coordination compensation, the circuit with simple, low cost and high input voltage requirement solves the technical problems of small threshold range and high cost existing in the existing voltage detection circuit, compared with the voltage detection circuit of the existing technology, the voltage threshold range of the voltage detection circuit of the double PN junction of the application is wide, the cost is low, the device is strong in replaceability, and the wide temperature working interval is better, compared with the voltage detection circuit of the integrated chip in the prior art, the application has lower cost and better material replaceability.
[0029] It should be noted that although several modules or units of the device for action execution are mentioned in the above detailed description, such division is not mandatory. In fact, according to the embodiments of the present disclosure, the features and functions of two or more modules or units described above can be embodied in one module or unit. Conversely, the features and functions of one module or unit described above can be further divided into several modules or units embodied.
[0030] The above description is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto, any changes or replacements within the technical range disclosed by the present application can be easily thought by those skilled in the art, which should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.
Claims
1. A voltage threshold detection circuit based on a double PN junction temperature compensation structure, characterized in that, The application relates to a temperature compensation circuit, which comprises the following modules: a target voltage regulating module for controlling an externally input target voltage to be detected; an input temperature detecting module connected in series in the target voltage regulating module, which detects the temperature of an external environment through a PN junction temperature curve and adjusts the target voltage to be detected according to the temperature change of the external environment; a temperature compensation module connected with the target voltage regulating module, which adjusts the negative temperature coefficient of a circuit according to the temperature change of the external environment to realize the temperature stability of the circuit voltage; a signal shaping and output impedance matching module connected with the temperature compensation module, which shapes the voltage signal output by the temperature compensation module and matches the impedance of a lower receiving circuit connected with the signal shaping and output impedance matching module.
2. The voltage threshold detection circuit based on the dual PN junction temperature compensation structure according to claim 1, characterized in that, The target voltage regulating module comprises a resistor R1, a capacitor C1, a double PN junction D1 and a resistor R2. One end of the resistor R1 is connected with the externally input target voltage to be detected, and the other end of the resistor R1 is connected with the capacitor C1 and the double PN junction D1; the double PN junction D1 is connected with the resistor R2.
3. The voltage threshold detection circuit based on the dual PN junction temperature compensation structure according to claim 2, characterized in that, The double PN junction D1 comprises a diode 13 and a diode 23; the negative electrode of the diode 13 is connected with the negative electrode of the diode 23; the negative electrode of the diode 13 and the negative electrode of the diode 23 are both connected with the resistor R2; the positive electrode of the diode 13 is connected with the temperature compensation module; and the positive electrode of the diode 23 is connected with the resistor R1 and the capacitor C1.
4. The voltage threshold detection circuit based on the dual PN junction temperature compensation structure according to claim 3, characterized in that, The input temperature detecting module comprises the diode 23.
5. The voltage threshold detection circuit based on the dual PN junction temperature compensation structure according to claim 4, characterized in that, The temperature compensation module comprises a triode Q1, a resistor R3, the resistor R2 and the double PN junction D1. The triode Q1 is connected with the double PN junction D1, the resistor R3 and the input voltage of an internal circuit board.
6. The voltage threshold detection circuit based on the dual PN junction temperature compensation structure according to claim 5, characterized in that, The base of the triode Q1 is connected with the positive electrode of the diode 13 of the double PN junction D1; the collector of the triode Q1 is connected with the resistor R3 and the signal shaping and output impedance matching module; and the emitter of the triode Q1 is connected with the input voltage of the internal circuit board.
7. The voltage threshold detection circuit based on the dual PN junction temperature compensation structure according to claim 6, characterized in that, The signal shaping and output impedance matching module comprises a resistor R4, a resistor R5, a resistor R6 and a triode Q2. One end of the resistor R4 is connected with the triode Q1; the other end of the resistor R4 is connected with the triode Q2; and the triode Q2 is connected with the resistor R5 and the resistor R6.
8. The voltage threshold detection circuit based on the dual PN junction temperature compensation structure according to claim 7, characterized in that, One end of the resistor R4 is connected with the collector of the triode Q1; and the other end of the resistor R4 is connected with the base of the triode Q2.
9. The voltage threshold detection circuit based on the dual PN junction temperature compensation structure according to claim 8, characterized in that, The emitter of the triode Q2 is connected with the input voltage of the internal circuit board; and the collector of the triode Q2 is connected with the resistor R5 and the resistor R6.
10. The voltage threshold detection circuit based on a dual PN junction temperature compensation structure according to claim 9, characterized in that, The resistor R6 is connected with the INT pin of the internal circuit board.