Temperature control method and device, semiconductor processing equipment and storage medium

Abstract

The invention provides a temperature control method and device, semiconductor processing equipment and a storage medium. The temperature control method comprises the following steps: before entering a cleaning stage of a semiconductor processing technology, acquiring a first target temperature of a heating ring, and determining a second target temperature for leaving a temperature margin according to the first target temperature; determining a first proportionality coefficient, a first integral coefficient and a first differential coefficient which are used for controlling the temperature of the heating ring; and adjusting the actual temperature of the heating ring according to the first proportionality coefficient, the first integral coefficient, the first differential coefficient and a preset transfer function so as to enable the actual temperature to be between the first target temperature and the second target temperature. According to the invention, the set values of the proportionality coefficient, the integral coefficient and the differential coefficient can be switched before entering the cleaning stage, so that the output power of the heating ring does not drop to zero, and the stability of a semiconductor processing technology and the normal operation of equipment are ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor device processing, and in particular, to a temperature control method, a temperature control device, a semiconductor processing equipment, and a computer readable storage medium. BACKGROUND

[0002] In the process of executing plasma cleaning process by a semiconductor processing equipment machine, a large amount of heat is released inside the process chamber, and the heat dissipation power of the equipment itself is limited. At present, the SHD heating ring usually only uses a set of PID control parameters for temperature adjustment. Under this condition, due to the contradiction between the heat accumulation inside the chamber and the insufficient heat dissipation capacity of the equipment, it is difficult to effectively balance by a single PID parameter, which easily leads to the problem of zero output power of the SHD heating ring, thereby affecting the process stability and normal operation of the equipment.

[0003] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a temperature control method, a temperature control device, a semiconductor processing equipment and a computer readable storage medium, which can adjust the actual temperature of the heating ring by switching the set values of the proportional coefficient, the integral coefficient and the differential coefficient before entering the cleaning stage, and make the actual temperature between the actual first target temperature and the second target temperature with a temperature margin, so as to ensure that the output power of the heating ring does not drop to zero, thereby ensuring the stability of the semiconductor processing process and the normal operation of the equipment. SUMMARY

[0004] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0005] In order to overcome the above-mentioned defects existing in the prior art, the present application provides a temperature control method, a temperature control device, a semiconductor processing equipment and a computer readable storage medium, which can adjust the actual temperature of the heating ring by switching the set values of the proportional coefficient, the integral coefficient and the differential coefficient before entering the cleaning stage, and make the actual temperature between the actual first target temperature and the second target temperature with a temperature margin, so as to ensure that the output power of the heating ring does not drop to zero, thereby ensuring the stability of the semiconductor processing process and the normal operation of the equipment.

[0006] Specifically, the temperature control method provided by the first aspect of the present invention is characterized by comprising the following steps: before entering the cleaning stage of the semiconductor processing technology, obtaining a first target temperature of the heating ring, and determining a second target temperature with a temperature margin based on it; determining a first proportional coefficient, a first integral coefficient, and a first derivative coefficient for controlling the temperature of the heating ring; and adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first derivative coefficient, and a preset transfer function, so that it is between the first target temperature and the second target temperature.

[0007] Furthermore, in some embodiments of the present invention, the step of determining the first proportional coefficient, the first integral coefficient, and the first differential coefficient for controlling the temperature of the heating ring includes: obtaining the second proportional coefficient, the second integral coefficient, and the second differential coefficient for controlling the temperature of the heating ring in the process stage; and determining the first proportional coefficient, the first integral coefficient, and the first differential coefficient suitable for the cleaning stage based on the second proportional coefficient, the second integral coefficient, and the second differential coefficient before entering the cleaning stage.

[0008] Furthermore, in some embodiments of the present invention, the second proportional coefficient is greater than the first proportional coefficient. The second integral coefficient is greater than the first integral coefficient. The second differential coefficient is less than the first differential coefficient.

[0009] Furthermore, in some embodiments of the present invention, the following steps are also included: in response to the end of the cleaning stage, adjusting the actual temperature of the heating ring according to the second proportional coefficient, the second integral coefficient, the second differential coefficient and the transfer function, so that the actual temperature directly reaches the first target temperature.

[0010] Furthermore, in some embodiments of the present invention, the step of adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient, and a preset transfer function, so that it is between the first target temperature and the second target temperature, includes:

[0011]

[0012] Among them, K p K is the first proportionality coefficient. i K is the first integral coefficient. d Let be the first differential coefficient, t be the current time, e(t) be the difference between the second target temperature and the actual temperature of the heating ring at the current time, and u(t) be the output power of the heating ring at the current time.

[0013] Further, in some embodiments of the present application, the step of adjusting the actual temperature of the heating ring to be between the first target temperature and the second target temperature according to the first proportional coefficient, the first integral coefficient, the first derivative coefficient and a preset transfer function further comprises: the actual temperature of the heating ring is between the first target temperature and the second target temperature, so that the heat generation power W2 of the process chamber is less than the heat dissipation power W0, thereby making the output power W1 of the heating ring not zero.

[0014] Further, in some embodiments of the present application, the temperature margin between the first target temperature and the second target temperature ranges from 6 to 8℃.

[0015] In addition, the above-mentioned temperature control device according to the second aspect of the present application comprises a memory and a controller. The controller is configured to: obtain a first target temperature of a heating ring before entering a cleaning phase of a semiconductor processing process, and determine a second target temperature leaving a temperature margin according to the first target temperature; determine a first proportional coefficient, a first integral coefficient and a first derivative coefficient for controlling the temperature of the heating ring; and adjust the actual temperature of the heating ring to be between the first target temperature and the second target temperature according to the first proportional coefficient, the first integral coefficient, the first derivative coefficient and a preset transfer function.

[0016] In addition, the above-mentioned semiconductor processing equipment according to the third aspect of the present application comprises a process chamber and a temperature control device according to the second aspect of the present application. The process chamber is used for semiconductor processing process of a wafer to be processed, wherein a heating ring is arranged for heating the wafer. The temperature control device is used for controlling the actual temperature of the heating ring in the process phase and the cleaning phase of the semiconductor processing process.

[0017] In addition, the above-mentioned computer readable storage medium according to the fourth aspect of the present application has computer instructions stored thereon. The computer instructions are executed by a processor to implement the temperature control method according to the first aspect of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0018] The above features and advantages of the present application can be better understood by reading the detailed description of embodiments of the present application in conjunction with the following drawings, in which: the components are not necessarily drawn to scale, and components having similar related functions or features can have the same or similar reference numbers.

[0019] Figure 1 A schematic diagram of a heating ring temperature model according to a reference example is shown.

[0020] Figure 2A temperature variation curve of a heating ring according to a reference example is shown.

[0021] Figure 3 A output power variation curve of a heating ring according to a reference example is shown.

[0022] Figure 4 A flowchart of a temperature control method according to some embodiments of the present application is shown.

[0023] Figure 5 A principle diagram of a temperature control method according to some embodiments of the present application is shown.

[0024] Figure 6 A diagram of a heating ring temperature model according to some embodiments of the present application is shown.

[0025] Figure 7 A temperature variation curve diagram of a prior art control method and the control method of the present application according to some embodiments of the present application is shown.

[0026] Figure 8 A output power variation curve diagram of a prior art control method and the control method of the present application according to some embodiments of the present application is shown. DETAILED DESCRIPTION

[0027] The specific embodiments of the present application will be described hereinafter by referring to specific embodiments, and other advantages and effects of the present application can be easily understood by those skilled in the art from the contents disclosed in the specification. Although the description of the present application will be introduced in combination with the preferred embodiments, this does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the present application in combination with the embodiments is to cover other options or modifications which can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description.

[0028] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0029] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0030] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0031] Please refer to the reference. Figures 1-3 . Figure 1 A schematic diagram of a heating ring temperature model provided according to a reference example is shown. Figure 2 A temperature change curve of the heating ring is shown based on a reference example. Figure 3 The output power variation curve of the heating ring provided according to a reference example is shown.

[0032] like Figure 1 As shown, the output power of the heating ring is W1, the power portion of the heat generated by the reaction in the process chamber transferred to the heating ring is W2, and the heat dissipation power of the heating ring is W0. Figure 2 and Figure 3 As shown, since the actual temperature of the heating ring has reached the set temperature t0, and the heat generation power W2 during the cleaning stage is still greater than the heat dissipation power W0, the output power W1 of the heating ring drops to zero. This leads to uncontrollable temperature of the heating ring during the cleaning stage, thus affecting the stability of the semiconductor processing technology. Moreover, the temperature shows a trend of dropping to zero, and the temperature will continue to rise, exceeding the acceptable range within the process chamber.

[0033] As mentioned above, during the plasma cleaning process on semiconductor processing equipment, a significant amount of heat is released inside the process chamber, while the equipment's own heat dissipation capacity is limited. Currently, electrostatic chuck heating rings (SHD heating rings) typically use only one set of PID control parameters for temperature regulation. Under these conditions, the contradiction between heat accumulation inside the chamber and insufficient heat dissipation capacity of the equipment is difficult to effectively balance with a single PID parameter, easily leading to the SHD heating ring's output power dropping to zero, thus affecting process stability and the normal operation of the equipment.

[0034] In order to overcome the above-mentioned defects in the prior art, the present application provides a temperature control method, a temperature control device, a semiconductor processing equipment and a computer readable storage medium, which can adjust the actual temperature of the heating ring by switching the set values of the proportional coefficient, the integral coefficient and the differential coefficient before entering the cleaning phase, and make the actual temperature of the heating ring between the actual first target temperature and the second target temperature with a temperature allowance, so as to ensure that the output power of the heating ring is not zero, thereby ensuring the stability of the semiconductor processing process and the normal operation of the equipment.

[0035] In some non-limiting embodiments, the above-mentioned temperature control device provided by the second aspect of the present application can be configured in the above-mentioned semiconductor processing equipment provided by the third aspect of the present application to be implemented.

[0036] Specifically, the above-mentioned semiconductor processing equipment provided by the third aspect of the present application comprises a process chamber and the above-mentioned temperature control device provided by the second aspect of the present application. Here, the process chamber is used for performing a semiconductor processing process on a wafer to be processed, and a heating ring is arranged in the process chamber for heating the wafer. The temperature control device is used for controlling the actual temperature of the heating ring in the process phase and the cleaning phase of the semiconductor processing process.

[0037] Further, in some non-limiting embodiments, the above-mentioned temperature control device provided by the second aspect of the present application comprises a memory and a controller. Here, the memory comprises but is not limited to the computer readable storage medium provided by the third aspect of the present application, and the computer instructions are stored on the memory. The controller is connected to the memory and is configured to execute the computer instructions stored on the memory to implement the temperature control method provided by the first aspect of the present application.

[0038] The working principle of the above-mentioned temperature control device will be described below in combination with some embodiments of the temperature control method. Those skilled in the art can understand that these embodiments of the temperature control method are only some non-limiting embodiments provided by the present application, which are intended to clearly demonstrate the main idea of the present application and provide some specific schemes for facilitating the public to implement, but not to limit the overall function or overall working mode of the temperature control device. Similarly, the temperature control device is also only a non-limiting embodiment provided by the present application, which does not limit the execution subject and execution order of each step in these temperature control methods.

[0039] Please refer to Figure 4 . Figure 4 A flowchart of a temperature control method according to some embodiments of the present application is shown.

[0040] As Figure 4As shown, before entering the cleaning stage of the semiconductor processing technology, the controller can first obtain the first target temperature t0 of the heating ring and determine a second target temperature t1 with a temperature margin based on it. Here, the temperature margin between the first target temperature t0 and the second target temperature t1 is in the range of 6 to 8°C.

[0041] After that, as Figure 1 As shown, the controller can determine a first proportional coefficient, a first integral coefficient, and a first derivative coefficient for controlling the temperature of the heating ring.

[0042] Specifically, the controller can acquire a second proportional coefficient, a second integral coefficient, and a second derivative coefficient used in the process stage to control the temperature of the heating ring.

[0043] Before entering the cleaning phase, the controller can determine a first proportional coefficient, a first integral coefficient, and a first differential coefficient suitable for the cleaning phase based on a second proportional coefficient, a second integral coefficient, and a second differential coefficient. Here, the second proportional coefficient is greater than the first proportional coefficient, the second integral coefficient is greater than the first integral coefficient, and the second differential coefficient is less than the first differential coefficient.

[0044] Please refer to the reference. Figure 5 and Figure 6 . Figure 5 A schematic diagram of the principle of a temperature control method provided according to some embodiments of the present invention is shown. Figure 6 A schematic diagram of a heating ring temperature model provided according to some embodiments of the present invention is shown.

[0045] After that, such as Figure 5 and Figure 6 As shown, the controller can adjust the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first derivative coefficient, and the preset transfer function, so that it is between the first target temperature and the second target temperature.

[0046]

[0047] Among them, K p K is the first proportionality coefficient. i K is the first integral coefficient. d Let t be the first differential coefficient, t be the current time, e(t) be the difference between the second target temperature and the actual temperature of the heating ring at the current time, and u(t) be the output power of the heating ring at the current time.

[0048] Specifically, in PID control, K p K is used to control the current output of the heating ring. i Used to correct previously accumulated temperature deviations, K dThe temperature change in the future is predicted. Therefore, the proportional and integral elements are reduced, the power output is reduced, the differential element is appropriately increased, the temperature rise caused by heat generation in the cleaning stage can be more obviously predicted, and the low power output of the heating ring is maintained.

[0049] As shown in Figure 5 and Figure 6 , the actual temperature of the heating ring is between the first target temperature and the second target temperature, the heat generation power W2 of the process chamber is less than the heat dissipation power W0, and the output power W1 of the heating ring is not zero.

[0050] After that, in response to the end of the cleaning stage, the controller can adjust the actual temperature of the heating ring according to the second proportional coefficient, the second integral coefficient, the second differential coefficient and the transfer function, and make the actual temperature directly reach the first target temperature. In this way, after the end of the cleaning stage, the controller can adjust the temperature target point and the parameter of the PID control back to the original value, without affecting the subsequent process action.

[0051] Please refer to Figure 7 and Figure 8 . Figure 7 The temperature change curve of the prior art control method and the control method of the present application is shown. Figure 8 The output power change curve of the prior art control method and the control method of the present application is shown.

[0052] In order to verify the effect of the temperature control method of the present application on the temperature control of the heating ring, the temperature and output power of the heating ring controlled by the prior art control method and the temperature and output power of the heating ring controlled by the control method of the present application can be compared. As shown in Figure 7 and Figure 8 , the second target temperature t1 is 250℃, and the first target temperature t0 is 257℃. At time 10s, the cleaning stage of the semiconductor processing process is entered. Between time 10s and time 50s, a large amount of heat is generated in the cleaning stage. The existing control method has a period of zero output power, while in the control method of the present application, the temperature of the heating ring slightly rises, but since it does not reach the actual first target temperature, the output power does not drop to zero, but remains in a low power control state.

[0053] In summary, the temperature control method, device, semiconductor processing equipment and storage medium provided by the present application can switch the set values of the proportional coefficient, integral coefficient and differential coefficient before entering the cleaning stage, adjust the actual temperature of the heating ring, and make the actual temperature of the heating ring between the actual first target temperature and the second target temperature with a temperature allowance, so as to ensure that the output power of the heating ring is not zero, thereby ensuring the stability of the semiconductor processing process and the normal operation of the equipment.

[0054] Although the above-described methods are illustrated and described as a series of acts for simplicity, it will be appreciated and understood that the methods are not limited by the order of acts, as some acts can occur in different orders and / or concurrently with other acts from that shown and described herein. In addition, not all illustrated acts can be required to implement the methods in accordance with one or more embodiments.

[0055] The steps of a method or algorithm described in connection with the embodiments disclosed herein can be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module can reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium. In the alternative, the storage medium can be integral to the processor. The processor and the storage medium can reside in an ASIC. The ASIC can reside in a user terminal. In the alternative, the processor and the storage medium can reside as discrete components in a user terminal.

[0056] In one or more exemplary embodiments, the functions described can be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functions can be stored on or transmitted over as one or more instructions or code on a computer-readable medium. Computer-readable media includes both computer storage media and communication media including any medium that facilitates transfer of a computer program from one place to another. A storage media can be any available media that can be accessed by a computer. By way of example, and not limitation, such computer-readable media can comprise RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer. Also, any connection is properly termed a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of medium. Disk and disc, as used herein, includes compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and blu-ray disc where disks usually reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0057] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A temperature control method characterized by, The method comprises the following steps: acquiring a first target temperature of a heating ring before entering a cleaning phase of a semiconductor processing process, and determining a second target temperature leaving a temperature margin according to the first target temperature; determining a first proportional coefficient, a first integral coefficient and a first differential coefficient for controlling the temperature of the heating ring; and adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient and a preset transfer function, so that the actual temperature of the heating ring is between the first target temperature and the second target temperature.

2. The temperature control method of claim 1, wherein, The step of determining the first proportional coefficient, the first integral coefficient and the first differential coefficient for controlling the temperature of the heating ring comprises: acquiring a second proportional coefficient, a second integral coefficient and a second differential coefficient for controlling the temperature of the heating ring in a process phase; and determining the first proportional coefficient, the first integral coefficient and the first differential coefficient adapted to the cleaning phase according to the second proportional coefficient, the second integral coefficient and the second differential coefficient before entering the cleaning phase.

3. The temperature control method of claim 2, wherein, The second proportional coefficient is greater than the first proportional coefficient, the second integral coefficient is greater than the first integral coefficient, and the second differential coefficient is less than the first differential coefficient.

4. The temperature control method of claim 3, wherein, The method further comprises the following steps: in response to the end of the cleaning phase, adjusting the actual temperature of the heating ring according to the second proportional coefficient, the second integral coefficient, the second differential coefficient and the transfer function, and directly reaching the first target temperature.

5. The temperature control method of claim 1, wherein, The step of adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient and a preset transfer function, so that the actual temperature of the heating ring is between the first target temperature and the second target temperature, comprises: wherein K p is the first proportional coefficient, K i is the first integral coefficient, K d is the first derivative coefficient, t is the current time, e(t) is the difference between the second target temperature and the actual temperature of the heating ring at the current time, and u(t) is the output power of the heating ring at the current time.

6. The temperature control method of claim 5, wherein, The step of adjusting the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient and a preset transfer function, so that the actual temperature of the heating ring is between the first target temperature and the second target temperature, further comprises: The actual temperature of the heating ring is between the first target temperature and the second target temperature, so that the heat generation power W2 of the process chamber is less than the heat dissipation power W0, so that the output power W1 of the heating ring does not drop to zero.

7. The temperature control method of claim 1, wherein, The temperature margin between the first target temperature and the second target temperature ranges from 6 to 8℃.

8. A temperature control device, characterized by It comprises: a memory; a controller configured to acquire a first target temperature of a heating ring before entering a cleaning phase of a semiconductor processing process, and determine a second target temperature leaving a temperature margin according to the first target temperature; determine a first proportional coefficient, a first integral coefficient and a first differential coefficient for controlling the temperature of the heating ring; and adjust the actual temperature of the heating ring according to the first proportional coefficient, the first integral coefficient, the first differential coefficient and a preset transfer function, so that the actual temperature of the heating ring is between the first target temperature and the second target temperature.

9. A semiconductor processing apparatus, characterized by comprising: It comprises: a process chamber for performing a semiconductor processing process on a wafer to be processed, wherein a heating ring is provided for heating the wafer; and The temperature control apparatus of claim 8, for controlling the actual temperature of the heating ring during process phases and cleaning phases of the semiconductor processing process.

10. A computer readable storage medium having stored thereon computer instructions, wherein, The computer instructions, when executed by a processor, implement the temperature control method of any one of claims 1-7.

Images