Touch display device

Abstract

The invention provides a touch display device which comprises a thin film transistor array substrate, a light-emitting device layer, a packaging layer and a touch device, and the touch device comprises a first interlayer insulating layer, a first metal electrode, a second interlayer insulating layer and a second metal electrode. The touch display device comprises a display area and a peripheral area, the peripheral area is provided with a through hole and a bonding hole, and the through hole and the bonding hole both penetrate through the second interlayer insulating layer, the first interlayer insulating layer and the planarization layer and expose the bonding metal pad. A part of the second metal electrode is arranged in the through hole and electrically connected with the bonding metal pad, the through hole is located in the side, close to the display area, of the bonding hole, and the coverage area of the second metal electrode in the peripheral area is located outside the opening area of the bonding hole. By limiting the coverage range of the second metal electrode, the second metal electrode is prevented from being connected with the residual metal part in the undercut part, so that the short circuit problem is prevented, and the electrical performance and reliability of the touch display device are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a touch display device. BACKGROUND

[0002] The touch display panel generally comprises a thin film transistor array substrate, a light emitting device layer, an encapsulation layer, and a touch device, etc. The touch device mainly comprises a first interlayer insulating layer, a first metal electrode, a second interlayer insulating layer (touch insulating layer), and a second metal electrode, which work together to realize the touch function.

[0003] The conventional touch insulating layer is usually made of inorganic material. However, the inorganic material performs poorly in the aspect of bending performance, and has a relatively high dielectric constant, which limits its application effect in the touch display panel. In order to improve the bending performance and touch performance of the touch display panel, the material of the touch insulating layer is changed from inorganic material to organic resin material.

[0004] The organic resin material has better bending performance and lower dielectric constant than the inorganic material, so that the touch insulating layer made of the organic resin material can better meet the performance requirements of the touch display panel. However, in the manufacturing process, due to the height difference between the display area and the peripheral area of the touch display panel, more material will accumulate in the peripheral area during the leveling process of the organic resin material. Under the same exposure process condition, the display area with thinner material can be cured, while the material at the bottom of the peripheral area with thicker material cannot be completely cured. In the subsequent developing process, the material that is not completely cured will be dissolved by the developing liquid, thereby forming an undercut in the peripheral area.

[0005] In the process of forming the second metal electrode, part of the second metal electrode will be formed in the undercut, and this part of the metal cannot be effectively removed by the conventional etching process due to its special position, thereby forming a residual metal part. These residual metal parts may cause short circuit of the touch display panel, thereby affecting the electrical performance and product reliability of the touch display panel.

[0006] Therefore, it is necessary to provide a new technical scheme to solve the above technical problems. SUMMARY

[0007] The embodiment of the present application aims to provide a touch display device, which aims to solve the technical problem that the touch display device is prone to short circuit.

[0008] Embodiments of the present application provide a touch display device, comprising: a thin film transistor array substrate; a light emitting device layer disposed on the thin film transistor array substrate; an encapsulation layer disposed on the light emitting device layer; and a touch device disposed on the encapsulation layer, the touch device comprising a first interlayer insulating layer, a first metal electrode disposed on the first interlayer insulating layer, a second interlayer insulating layer disposed on the first interlayer insulating layer, and a second metal electrode disposed on the second interlayer insulating layer; wherein the touch display device comprises a display area and a peripheral area located at at least one side of the display area, the peripheral area is provided with a through hole and a bonding hole, the through hole and the bonding hole both penetrate the second interlayer insulating layer, the first interlayer insulating layer and a planarization layer of the thin film transistor array substrate, the through hole and the bonding hole both expose a bonding metal pad of the thin film transistor array substrate, a part of the second metal electrode is disposed in the through hole and electrically connected with the bonding metal pad, the through hole is located at a side of the bonding hole close to the display area, and a coverage range of the second metal electrode in the peripheral area is located outside an opening area of the bonding hole.

[0009] In the above touch display device, an edge line of the second metal electrode is located between a center line of the through hole and a center line of the bonding hole.

[0010] In the above touch display device, in the peripheral area, a distance from the edge line of the second metal electrode to an edge line of a part of the second interlayer insulating layer located in the bonding hole is greater than or equal to 0 and less than a distance from the edge line of the second metal electrode to an edge line of a part of the planarization layer located in the bonding hole.

[0011] In the above touch display device, in the peripheral area, the edge line of the second metal electrode is in a straight line shape and parallel to the edge line of the part of the second interlayer insulating layer located in the bonding hole.

[0012] In the above touch display device, a size of the part of the planarization layer located in the bonding hole is less than a size of the part of the bonding hole located in the first interlayer insulating layer and less than a size of the part of the bonding hole located in the second interlayer insulating layer.

[0013] In the above touch display device, the size of the part of the planarization layer located in the bonding hole is less than or equal to half of the size of the part of the bonding hole located in the first interlayer insulating layer.

[0014] In the above touch display device, a residual metal part located in an undercut part of the bonding hole is disposed on the planarization layer and does not contact the bonding metal pad.

[0015] In the touch display device, the residual metal part in the undercut portion of the bonding hole is not in contact with the second metal electrode.

[0016] In the touch display device, a distance from an edge line of the second metal electrode to an edge line of a portion of the bonding hole located in the second interlayer insulating layer is greater than or equal to a diameter of a minimum circumscribed circle of the through hole.

[0017] In the touch display device, a size of the bonding hole located at a bottom of the planarization layer is greater than a size of the through hole located at the bottom of the planarization layer.

[0018] The touch display device provided in the present application can effectively solve the technical problem of short circuit of the touch display device by limiting the coverage range of the second metal electrode outside the opening area of the bonding hole.

[0019] Specifically, the technical solution of the present application controls the coverage range of the second metal electrode so that the second metal electrode does not extend into the opening area of the bonding hole. When the second interlayer insulating layer is made of an organic resin material, due to the height difference between the display area and the peripheral area and the leveling property of the organic resin material, the organic resin material in the peripheral area will be thicker. During the exposure and development process, the organic resin material at the bottom of the peripheral area cannot be completely cured and is dissolved by the developer, forming an undercut portion. The second metal electrode will enter these undercut portions during deposition. Due to the special position and shape of the undercut portion, the second metal electrode in the undercut portion cannot be effectively removed by conventional etching process, thereby forming a residual metal part. The present application limits the coverage range of the second metal electrode outside the opening area of the bonding hole. Even if there is a small amount of residual metal part in the undercut portion of the second interlayer insulating layer, since the second metal electrode itself does not extend to the bonding hole area, there is no electrical connection between the residual metal part and the second metal electrode, so the second metal electrode will not be short-circuited. At the same time, by reasonably configuring the position of the through hole, the through hole is located on the side of the bonding hole close to the display area, ensuring that the second metal electrode can realize reliable electrical connection with the bonding metal pad through the through hole, meeting the electrical connection requirement, while avoiding the short circuit problem. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 is a sectional view of a touch display panel in the touch display device provided by the embodiment of the present application.

[0021] Figure 2 is Figure 1 is a top view of a portion of the touch display panel located in the peripheral area.

[0022] Figure 3is a schematic view of a manufacturing method of the touch display device provided by the embodiments of the present application. DETAILED DESCRIPTION

[0023] The specific embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0024] The terms "first", "second", and similar terms do not denote any order, quantity, or importance, but are used to distinguish different technical features. The term "multiple" and similar terms mean two or more, unless otherwise explicitly limited.

[0025] The embodiments of the present application can be combined with each other.

[0026] The embodiments of the present application provide a touch display device, which effectively avoids the short circuit problem caused by the undercut of the touch insulation layer (the second interlayer insulation layer 2043, which is made of organic resin material) by optimizing the coverage range of the second metal electrode 2044.

[0027] The touch display device includes a touch display panel and a driving chip (not shown in the figure), as shown in Figure 1 The touch display panel includes a display area AA and a peripheral area BA located at least one side of the display area AA. The part of the touch display panel located in the display area AA is used to display image content, and the part of the touch display panel located in the peripheral area BA is mainly used for electrical connection and signal transmission. The touch display panel includes, from bottom to top, a thin film transistor array substrate 201, a light emitting device layer 202, an encapsulation layer 203, and a touch device 204. The pins of the driving chip are bonded with the bonding metal pads 2012 of the touch display panel in the peripheral area BA of the touch display panel.

[0028] The thin film transistor array substrate 201 includes a substrate (not shown in the figure) and a thin film transistor circuit 2011 provided on the substrate for driving pixels. The thin film transistor array substrate 201 includes a plurality of functional layers, including bonding metal pads 2012 and a planarization layer 2013 provided on the bonding metal pads 2012. The bonding metal pads 2012 are located in the source-drain metal layer of the thin film transistor array substrate 201, and are used to realize electrical connection with the pins of the driving chip. The material of the bonding metal pads 2012 is usually selected from aluminum, copper or alloy materials thereof. The planarization layer 2013 is provided on the bonding metal pads 2012, and the planarization layer 2013 is made of organic insulating material, which is used to eliminate the surface undulation of the underlying film layer, and to provide a flat base surface for the formation of subsequent film layers.

[0029] In the display region AA, the light emitting device layer 202 is disposed on the thin film transistor array substrate 201, the light emitting device layer 202 comprises an organic light emitting diode, the organic light emitting diode is composed of multiple film layers such as an anode, a light emitting material layer, and a cathode, and is used to generate light of different colors such as red, green, and blue. The light emitting device layer 202 realizes independent control and driving of pixels through electrical connection with the thin film transistor array substrate 201, and the luminance and color of each pixel are adjusted by controlling the current flowing through the organic light emitting diode. The encapsulation layer 203 is disposed on the light emitting device layer 202, and the encapsulation layer 203 is used to protect the light emitting device from the invasion of harmful substances such as water vapor and oxygen in the external environment, and to ensure the long-term stable operation of the light emitting device.

[0030] The touch device 204 is disposed on the encapsulation layer 203 to realize the touch sensing function of the touch display panel. The touch device 204 comprises a first interlayer insulation layer (IL1) 2041, a first metal electrode 2042 disposed on the first interlayer insulation layer 2041, a second interlayer insulation layer (IL2) 2043 disposed on the first interlayer insulation layer 2041, and a second metal electrode 2044 disposed on the second interlayer insulation layer 2043. The first interlayer insulation layer 2041 is disposed on the encapsulation layer 203 in the display region AA and is disposed on the planarization layer 2013 in the peripheral region BA, and the first interlayer insulation layer 2041 is made of inorganic insulating material. The first metal electrode 2042 is disposed on the first interlayer insulation layer 2041, the first metal electrode 2042 is made of transparent conductive material, constitutes a driving electrode part of the touch sensing electrode, and at least a part of the first metal electrode 2042 is exposed to the first interlayer insulation layer 2041. The first metal electrode 2042 is located in the first metal layer (Metal1) of the touch device 204. The second interlayer insulation layer 2043 is disposed on the first interlayer insulation layer 2041, and the second interlayer insulation layer 2043 serves as a touch insulation layer and provides insulation isolation between the first metal electrode 2042 and the second metal electrode 2044, to ensure electrical independence between the two electrodes. The second metal electrode 2044 is disposed on the second interlayer insulation layer 2043, and the second metal electrode 2044 cooperates with the first metal electrode 2042 to form an electrode pair for touch sensing, and the second metal electrode 2044 is located in the second metal layer (Metal2) of the touch device 204.

[0031] The second interlayer insulating layer 2043 is made of an organic resin material, which has better bending performance and lower dielectric constant than traditional inorganic materials. The organic resin material is a low-temperature organic glue material, which has a relatively low glass transition temperature and can be processed at a relatively low temperature, thereby avoiding thermal damage to the underlying device. The second interlayer insulating layer 2043 is patterned by an exposure machine, which uses ultraviolet light of a specific wavelength to selectively cure the organic resin material. Since the display area AA of the touch display panel has a height difference relative to the peripheral area BA, the surface height of the display area AA is usually higher than that of the peripheral area BA. During the leveling process, the organic resin material will accumulate more material in the peripheral area BA, forming a non-uniform thickness distribution. In the peripheral area BA, the thickness of the second interlayer insulating layer 2043 is usually 20% to 50% thicker than that of the display area AA. The second interlayer insulating layer 2043 forms an undercut at the bonding hole BH, which is caused by the uneven curing of the organic resin material at the edge of the bonding hole BH.

[0032] As shown in FIGS. 1A and 1B, the touch display panel provided by the embodiments of the present application is provided with a through hole TH and a bonding hole BH in the peripheral area BA. The through hole TH and the bonding hole BH both penetrate the second interlayer insulating layer 2043, the first interlayer insulating layer 2041, and the planarization layer 2013 of the thin film transistor array substrate 201, and both expose the bonding metal pad 2012 of the thin film transistor array substrate 201. The through hole TH is used to realize electrical connection between the second metal electrode 2044 and the bonding metal pad 2012. The bonding hole BH is used to electrically connect the pins of the driving chip with the bonding metal pad 2012. The pins of the driving chip are electrically and mechanically connected with the bonding metal pad 2012 through processes such as thermal compression bonding, ultrasonic bonding, or thermal ultrasonic bonding. Figure 1 Figure 2 As shown in FIGS. 1A and 1B, the touch display panel provided by the embodiments of the present application is provided with a through hole TH and a bonding hole BH in the peripheral area BA. The through hole TH and the bonding hole BH both penetrate the second interlayer insulating layer 2043, the first interlayer insulating layer 2041, and the planarization layer 2013 of the thin film transistor array substrate 201, and both expose the bonding metal pad 2012 of the thin film transistor array substrate 201. The through hole TH is used to realize electrical connection between the second metal electrode 2044 and the bonding metal pad 2012. The bonding hole BH is used to electrically connect the pins of the driving chip with the bonding metal pad 2012. The pins of the driving chip are electrically and mechanically connected with the bonding metal pad 2012 through processes such as thermal compression bonding, ultrasonic bonding, or thermal ultrasonic bonding.

[0033] A part of the second metal electrode 2044 is arranged in the through hole TH and is electrically connected with the bonding metal pad 2012. The through hole TH is located on one side of the bonding hole BH close to the display area AA. The distance between the center line L2 of the through hole TH and the center line L3 of the bonding hole BH is 10 microns to 200 microns. This distance setting can ensure that there is enough spacing between the through hole TH and the bonding hole BH to avoid mutual interference.

[0034] ​The size of the bonding hole BH at different layers is different. The size of the bonding hole BH at the bottom of the planarization layer 2013 is smaller than the size of the bonding hole BH at the top of the planarization layer 2013, and the size difference forms a stepped or ramped sidewall profile. The size of the bonding hole BH at the bottom of the planarization layer 2013 is smaller than the size of the bonding hole BH at the portion of the first interlayer dielectric layer 2041 and smaller than the size of the bonding hole BH at the portion of the second interlayer dielectric layer 2043. In this way, the residual metal portion 2045 and the bonding metal pad 2012 can be isolated by the planarization layer 2013 to form effective physical and electrical isolation. Preferably, the size of the bonding hole BH at the bottom of the planarization layer 2013 is smaller than or equal to half of the size of the bonding hole BH at the portion of the first interlayer dielectric layer 2041, so as to maximize the isolation effect.

[0035] During the manufacturing process of the second interlayer dielectric layer 2043, due to the characteristics of the organic resin material, an undercut will be formed in the bonding hole BH area after the exposure and development process. The undercut refers to the recessed portion formed by the sidewall of the organic resin material at the edge of the bonding hole BH. The depth of the undercut is usually 0.5 microns to 3 microns, and the width is 1 micron to 5 microns. This form is caused by uneven thickness and inconsistent curing of the material. When the organic resin material is thicker, the bottom material does not receive enough exposure dose and cannot be completely cured, so it is dissolved by the developer during the development process, thereby forming an undercut.

[0036] In the embodiments of the present application, the residual metal portion 2045 located in the undercut of the bonding hole BH is disposed on the planarization layer 2013 and does not contact the bonding metal pad 2012. These residual metal portions 2045 are metal materials that enter the undercut during the formation of the second metal electrode 2044. Due to the special location and form of the undercut, conventional etching processes cannot completely remove the residual metal portion 2045. The residual metal portion 2045 and the bonding metal pad 2012 located in the source-drain metal layer are physically and electrically isolated by the planarization layer 2013, avoiding the occurrence of short circuit problems.

[0037] The size of the bonding hole BH at the bottom of the planarization layer 2013 is larger than the size of the through hole TH at the bottom of the planarization layer 2013. The bonding hole BH needs to provide enough space for the bonding operation of the driving chip pin, while the through hole TH is mainly used for electrical connection, and the size is relatively small to meet the demand.

[0038] The second metal electrode 2044 is located outside the opening area of the bonding hole BH in the coverage of the peripheral area BA. By limiting the coverage of the second metal electrode 2044, the second metal electrode 2044 is prevented from extending into the bonding hole BH area. The edge line L1 of the second metal electrode 2044 is located between the center line L2 of the through hole TH and the center line L3 of the bonding hole BH. In the portion of the second metal electrode 2044 located in the peripheral area BA, the removed portion of the second metal electrode 2044 is located on the side of the edge line L1 of the second metal electrode 2044 away from the display area AA, and the removed portion of the second metal electrode 2044 forms a blank area corresponding to the bonding hole BH. The area of such a blank area is usually 1.2 to 2 times the opening area of the bonding hole BH to ensure sufficient safety margin.

[0039] In the peripheral area BA, the distance D1 from the edge line L1 of the second metal electrode 2044 to the edge line L5 of the portion of the second interlayer insulating layer 2043 where the bonding hole BH is located is greater than or equal to 0 and less than the distance D2 from the edge line L1 of the second metal electrode 2044 to the edge line L4 of the bottom of the planarization layer 2013. The distance D1 from the edge line L1 of the second metal electrode 2044 to the edge line L5 of the portion of the second interlayer insulating layer 2043 where the bonding hole BH is located is 0 to 50 microns. Such a distance setting ensures that the second metal electrode 2044 will not come into contact with the undercut portion of the bonding hole BH area.

[0040] In the peripheral area BA, the edge line L1 of the second metal electrode 2044 is in a straight line shape and parallel to the edge of the display area AA. The edge line L1 of the second metal electrode 2044 is in a straight line shape and parallel to the edge line L5 of the portion of the second interlayer insulating layer 2043 where the bonding hole BH is located. The plurality of through holes TH are arranged along the edge line L5 of the portion of the second interlayer insulating layer 2043 where the bonding hole BH is located. The distance D1 from the edge line L1 of the second metal electrode 2044 to the edge line L5 of the portion of the second interlayer insulating layer 2043 where the bonding hole BH is located is greater than or equal to the diameter D3 of the minimum circumscribed circle of the through hole TH. Such a distance relationship ensures that the through hole TH can be completely located within the coverage of the second metal electrode 2044, while preventing the second metal electrode 2044 from extending into the bonding hole BH area, thereby ensuring both the reliability of electrical connection and avoiding the risk of short circuit caused by residual metal in the undercut portion.

[0041] The residual metal portion 2045 located within the undercut of the bonding via BH is not in contact with the second metal electrode 2044. Since the coverage area of ​​the second metal electrode 2044 is confined outside the opening region of the bonding via BH, physical and electrical isolation is formed between the residual metal portion 2045 and the second metal electrode 2044, preventing short circuits. The portion of the second metal electrode 2044 in the peripheral region BA is electrically isolated from the residual metal portion 2045 located within the undercut of the bonding via BH. The portion of the second metal electrode 2044 within the via TH is etched away from the portion outside the via TH, ensuring that the presence of the residual metal portion 2045 does not affect the normal function of the second metal electrode 2044.

[0042] like Figure 3 As shown, this application also provides a method for manufacturing a touch display device, the method comprising the following steps: Step 1: Fabrication of the first interlayer insulating layer (IL1) 2041. This step involves forming the first interlayer insulating layer 2041 on the portion of the planarization layer 2013 located in the peripheral region BA of the thin-film transistor array substrate 201. The specific process includes four steps: deposition, photolithography, dry etching, and stripping. In the deposition step, an insulating material such as silicon nitride or silicon oxide is deposited on the surface of the planarization layer 2013 using plasma-enhanced chemical vapor deposition. In the photolithography step, patterning is performed using photoresist and a first photomask (Mask1). In the dry etching step, unwanted insulating material is removed using reactive ion etching, while simultaneously forming vias TH located on the portion of the planarization layer 2013 and the first interlayer insulating layer 2041, and bonding vias BH located on the portion of the planarization layer 2013 and the first interlayer insulating layer 2041. In the stripping step, residual photoresist is removed using oxygen plasma or an organic solvent.

[0043] Step 2: Fabrication of the first metal electrode 2042. This step involves forming the first metal electrode 2042 on the first interlayer insulating layer 2041. The specific process includes four steps: deposition, photolithography, dry etching, and stripping. In the deposition step, a transparent conductive material, such as indium tin oxide or indium zinc oxide, is deposited on the surface of the first interlayer insulating layer 2041 using a sputtering process. In the photolithography step, a pattern for the first metal electrode 2042 is formed using photoresist and a second photomask (Mask 2). The photomask pattern uses geometric shapes such as stripes or rhombuses to achieve touch-sensing functionality. In the dry etching step, unwanted metal material is removed using chlorine-based plasma. In the stripping step, remaining photoresist is removed.

[0044] Third step: making the second interlayer insulating layer (IL2) 2043. This step includes forming the second interlayer insulating layer 2043 on the first interlayer insulating layer 2041. The specific process includes two steps of photo (Photo) and oven (Oven). In the photo step, the organic resin material is coated on the surface of the first interlayer insulating layer 2041 by the spin coating process, and then exposed using the third mask Mask3. The photo step is also used to form the part of the through hole TH located in the second interlayer insulating layer 2043 and the part of the bonding hole BH located in the second interlayer insulating layer 2043, and the two sub-holes of the through hole TH are connected to form a complete through hole TH, and the two sub-holes of the bonding hole BH are connected to form a complete bonding hole BH. In the oven step, the exposed organic resin material is heat treated to complete the curing process.

[0045] Fourth step: making the second metal electrode 2044. This step is performed after the third step is completed to ensure that the through hole TH and the bonding hole BH have been formed. This step includes forming the second metal electrode 2044 on the second interlayer insulating layer 2043. The specific process includes five steps of pre-clean (Pre-Clean), deposition (Depo), photo (Photo), dry etching (Dry Etch), and stripping (Strip). In the pre-clean step, the surface of the second interlayer insulating layer 2043 is cleaned of organic residues and oxides using oxygen plasma or dilute hydrofluoric acid solution. In the deposition step, a sputtering process is used to deposit a metal material, such as aluminum, copper, or molybdenum, on the surface of the second interlayer insulating layer 2043, and the metal material will also be deposited into the through hole TH and contact the bonding metal pad 2012. In the photo step, a specially designed fourth mask Mask4 is used to form the pattern of the second metal electrode 2044, which is adjusted to control the coverage of the second metal electrode 2044, ensuring that the coverage of the second metal electrode 2044 in the peripheral area BA is located outside the opening area of the bonding hole BH. In the dry etching step, chlorine or fluorine-based plasma is used to remove the unwanted metal material, and the part of the second metal electrode 2044 located on the side of the through hole TH away from the display area AA is removed by the etching process. In the stripping step, the remaining photoresist is removed. A part of the second metal electrode 2044 is arranged in the through hole TH and electrically connected to the bonding metal pad 2012, and the part of the second metal electrode 2044 located on the side of the through hole TH away from the display area AA is removed.

[0046] Fifth step: making the protection layer (PAS) (not shown in the figure). This step includes three steps of photo, oven and dry etch. In the photo step, photoresist and the fifth mask (Mask5) are used to form the area that needs to be etched further, mainly for the bonding hole (BH) area. In the oven step, the photoresist is heat treated to improve the etching resistance. In the dry etch step, the planarization layer 2013 and the first interlayer insulating layer 2041 in the bonding hole (BH) are etched further to form the special profile of the bonding hole (BH) in the planarization layer 2013 and the first interlayer insulating layer 2041. This further etching can form more obvious stepped or sloping sidewalls, enhancing the isolation effect of the residual metal part 2045.

[0047] In the fourth step, the part of the second metal electrode 2044 located away from the display area AA on the side of the through hole (TH) is selectively removed. The selective removal step is achieved by adjusting the fourth mask (Mask4), so that the edge line L1 of the second metal electrode 2044 is located between the center line L2 of the through hole (TH) and the center line L3 of the bonding hole (BH).

[0048] Through the above manufacturing method, the coverage range of the second metal electrode 2044 can be effectively controlled to avoid its extension to the bonding hole (BH) area, thereby preventing the occurrence of short circuit problems.

[0049] The touch display device of the present application effectively solves the short circuit problem caused by the connection between the second metal electrode 2044 and the undercut residual metal part 2045 in the traditional technology through the above technical solution. The coverage range limitation of the second metal electrode 2044 ensures the normal operation of the circuit, while maintaining good touch performance and display effect.

[0050] The touch display device provided by the present application can effectively solve the technical problem of short circuit of the touch display device by limiting the coverage of the second metal electrode 2044 in the peripheral area BA to the opening area of the bonding hole BH. Specifically, the technical solution of the present application controls the coverage of the second metal electrode 2044, so that the second metal electrode 2044 does not extend into the opening area of the bonding hole BH. When the second interlayer insulating layer 2043 is made of an organic resin material, due to the height difference between the display area AA and the peripheral area BA and the leveling property of the organic resin material, the organic resin material in the peripheral area BA will accumulate thicker. During the exposure and development process, the organic resin material at the bottom of the peripheral area BA cannot be completely cured and is dissolved by the developer, forming an undercut portion. The second metal electrode 2044 will enter these undercut portions during deposition. Due to the special position and shape of the undercut portion, the second metal electrode 2044 located in the undercut portion cannot be effectively removed by the conventional etching process, thereby forming a residual metal portion 2045. By limiting the coverage of the second metal electrode 2044 to the outside of the opening area of the bonding hole BH, even if there is a small amount of residual metal portion 2045 in the undercut portion of the second interlayer insulating layer 2043, since the second metal electrode 2044 itself does not extend to the bonding hole BH area, there is no electrical connection between these residual metal portions 2045 and the second metal electrode 2044, so it will not cause the second metal electrode 2044 to short circuit. At the same time, by reasonably configuring the position of the through hole TH, the through hole TH is located on the side of the bonding hole BH close to the display area AA, ensuring that the second metal electrode 2044 can realize reliable electrical connection with the bonding metal pad 2012 through the through hole TH, meeting the electrical connection requirement, while avoiding the short circuit problem.

[0051] The above detailed the embodiments of the present application, the content of the specification should not be understood as limiting the scope of protection of the present application.

Claims

1. A touch display device, characterized in that, The touch display device comprises: a thin film transistor array substrate; a light emitting device layer disposed on the thin film transistor array substrate; an encapsulation layer disposed on the light emitting device layer; and a touch device disposed on the encapsulation layer, the touch device comprising a first interlayer insulating layer, a first metal electrode disposed on the first interlayer insulating layer, a second interlayer insulating layer disposed on the first interlayer insulating layer, and a second metal electrode disposed on the second interlayer insulating layer; wherein the touch display device comprises a display area and a peripheral area located at at least one side of the display area, the peripheral area is provided with a through hole and a bonding hole, the through hole and the bonding hole both penetrate the second interlayer insulating layer, the first interlayer insulating layer and a planarization layer of the thin film transistor array substrate, the through hole and the bonding hole both expose a bonding metal pad of the thin film transistor array substrate, a part of the second metal electrode is disposed in the through hole and is electrically connected with the bonding metal pad, the through hole is located at a side of the bonding hole close to the display area, and a coverage range of the second metal electrode in the peripheral area is located outside an opening area of the bonding hole. 2.The touch display device of claim 1, wherein, An edge line of the second metal electrode is located between a center line of the through hole and a center line of the bonding hole. 3.The touch display device of claim 2, wherein, In the peripheral area, a distance from the edge line of the second metal electrode to an edge line of a part of the second interlayer insulating layer located at the bonding hole is greater than or equal to 0 and less than a distance from the edge line of the second metal electrode to an edge line of a part of the planarization layer located at the bottom of the bonding hole.

4. The touch display device according to claim 1, wherein, In the peripheral area, the edge line of the second metal electrode is in a straight line shape and is parallel to the edge line of the part of the second interlayer insulating layer located at the bonding hole.

5. The touch display device according to claim 1, wherein, A size of the bonding hole located at the bottom of the planarization layer is less than a size of the bonding hole located at a part of the first interlayer insulating layer and less than a size of the bonding hole located at a part of the second interlayer insulating layer. 6.The touch display device of claim 5, wherein, The size of the bonding hole located at the bottom of the planarization layer is less than or equal to half of the size of the bonding hole located at the part of the first interlayer insulating layer. 7.The touch display device of claim 5, wherein, A residual metal part located in an undercut part of the bonding hole is disposed on the planarization layer and does not contact the bonding metal pad. 8.The touch display device of claim 1, wherein, The residual metal part located in the undercut part of the bonding hole does not contact the second metal electrode.

9. The touch display device according to claim 1, wherein, A distance from the edge line of the second metal electrode to the edge line of the part of the second interlayer insulating layer located at the bonding hole is greater than or equal to a diameter of a minimum circumscribed circle of the through hole.

10. The touch display device of claim 1, wherein, The size of the bonding hole located at the bottom of the planarization layer is greater than the size of the through hole located at the bottom of the planarization layer.

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