Method and system for manufacturing semiconductor device

Abstract

The embodiment of the invention provides a manufacturing method and a manufacturing system of a semiconductor device. The manufacturing system comprises a laser emitting device, a light collecting device and a controller. And the laser emitting device is used for forming a scanning light spot on the metal layer on the substrate by adopting the target laser beam so as to etch the metal layer. And the light acquisition device is used for acquiring real-time emitted light generated by excitation after plasma treatment of the metal layer at the scanning light spot according to a preset acquisition frequency, and generating real-time plasma spectrum data of the etched metal at the scanning light spot based on the real-time emitted light. And the controller is coupled with the laser emitting device and the light collecting device and is used for acquiring the real-time plasma spectrum data from the light collecting device and controlling the laser emitting device to stop etching the metal layer at the scanning light spot by adopting the target laser beam or not based on the real-time plasma spectrum data.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a manufacturing method and a manufacturing system of a semiconductor device. BACKGROUND

[0002] Power semiconductor devices play a crucial role in modern electronic equipment and are widely used in electrical management, automotive electronics, industrial control, and other fields. With the advancement of technology, the performance and reliability requirements of devices are constantly improving, especially in high-power and high-frequency applications. To meet these requirements, the manufacturing process of power semiconductor devices is also being optimized, with the formation of metal layers being one of the key steps. Metal layers are usually obtained through etching processes, and insufficient etching precision of etching processes often leads to pattern distortion, which in turn affects the performance of power semiconductor devices. SUMMARY

[0003] Embodiments of the present application provide a manufacturing method and a manufacturing system of a semiconductor device to at least partially solve the above technical problems.

[0004] To achieve the above-mentioned purpose, according to a first aspect of the present application, a manufacturing system of a semiconductor device is provided, comprising a laser emitting device, a light collecting device, and a controller. The laser emitting device is configured to form a scanning spot on a metal layer on a substrate by using a target laser beam to etch the metal layer. The light collecting device is configured to collect real-time emission light generated by the etched metal layer at the scanning spot after being ionized by backstriking at a preset collection frequency, and generate real-time plasma spectrum data of the etched metal at the scanning spot based on the real-time emission light. The controller is coupled to the laser emitting device and the light collecting device, configured to obtain the real-time plasma spectrum data from the light collecting device, and control whether the laser emitting device stops etching the metal layer at the scanning spot by using the target laser beam based on the real-time plasma spectrum data.

[0005] According to a second aspect of the present application, a manufacturing method of a semiconductor device is provided, comprising the following steps: a laser emitting device forms a scanning spot on a metal layer on a substrate by using a target laser beam to etch the metal layer; a light collecting device collects real-time emission light generated by the etched metal layer at the scanning spot after being ionized by backstriking at a preset collection frequency, and generates real-time plasma spectrum data of the etched metal at the scanning spot based on the real-time emission light; a controller obtains the real-time plasma spectrum data from the light collecting device, and controls whether the laser emitting device stops etching the metal layer at the scanning spot by using the target laser beam based on the real-time plasma spectrum data.

[0006] The manufacturing method and manufacturing system of the semiconductor device provided in the embodiments of the present application can form a scanning spot on the metal layer on the substrate by using the target laser beam of the laser emitting device to etch the metal layer. When the target laser beam and the metal surface at the scanning spot interact with each other, high temperature is generated. The high temperature can evaporate and ionize the metal at the scanning spot to form plasma, and the plasma can emit light of a specific wavelength when the plasma is de-excited. The light collecting device can collect the real-time emission light generated by the de-excitation of the plasma after the metal layer at the scanning spot is ionized, and generate real-time plasma spectrum data of the etched metal at the scanning spot based on the real-time emission light. The controller is coupled with the laser emitting device and the light collecting device, and is configured to acquire the real-time plasma spectrum data from the light collecting device, and control whether the laser emitting device stops etching the metal layer at the scanning spot by using the target laser beam based on the real-time plasma spectrum data. In this way, the real-time plasma spectrum data of the etched metal is acquired based on the real-time emission light collected during the etching of the metal by using the target laser beam, so that the type of the etched metal and the residual amount of the etched metal at the current scanning spot can be monitored in real time, and the etching endpoint of the target laser beam at the scanning spot can be determined, thereby improving the etching precision of the target laser beam at the scanning spot and improving the performance of the semiconductor device. BRIEF DESCRIPTION OF DRAWINGS

[0007] Figure 1 A schematic view of manufacturing a semiconductor device by using the manufacturing system of the semiconductor device provided in the embodiments of the present application; Figure 2 A structural schematic view of the laser emitting device provided in the embodiments of the present application; Figure 3 A flowchart of the manufacturing method of the semiconductor device provided in the embodiments of the present application.

[0008] REFERENCE SIGNS: 100, a manufacturing system of a semiconductor device; 10, a laser emitting device; 101, a laser emitter; 102, a beam control component; 103, a spot shaping element; 104, a spatial light modulator; 105, a galvanometer module; 106, a focusing element; 20, a light collecting device; 30, a controller; 401, a substrate; 402, a metal layer; 50, a vacuum adsorption table. DETAILED DESCRIPTION

[0009] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0010] Figure 1 A schematic diagram of a semiconductor device manufacturing system for manufacturing a semiconductor device in an exemplary embodiment of the present application.

[0011] Referring to Figure 1 The semiconductor device manufacturing system 100 provided by the embodiments of the present application is used to pattern the metal layer 402 to manufacture a patterned metal layer of a semiconductor device. The semiconductor device can include one or more of a power semiconductor device, a memory, and a sensor. When the semiconductor device is a power semiconductor device, the patterned metal layer can include at least one of a gate and a source / drain of the power device.

[0012] Before the metal layer 402 is patterned by the semiconductor device manufacturing system 100, the metal layer 402 needs to be formed on the substrate 401. The metal layer 402 can be formed by one or more of physical vapor deposition, chemical vapor deposition, electroplating, atomic layer deposition, molecular beam epitaxy, spin coating, and sintering. The metal layer 402 can include one or more metal films. In some embodiments, each metal film can include one or more of molybdenum, aluminum, copper, titanium, and tungsten. The substrate 401 can include, but is not limited to, a semiconductor material such as Si, SiC, or GaN. Exemplarily, the substrate 401 includes SiC. One or more dielectric layers can also be provided on the substrate 401.

[0013] Further, in the process of patterning the metal layer 402 by the semiconductor device manufacturing system 100, the substrate 401 is placed on the vacuum chuck 50, and the vacuum chuck 50 is placed in a chamber (not shown in the figure). The pressure in the chamber can be controlled at 0.1 kPa to 100 kPa. The chamber is provided with a nozzle for injecting inert gas into the chamber. The inert gas can protect the metal layer 402 that does not need to be etched. The inert gas can include at least one of nitrogen and argon. In addition, the inert gas can also be used to blow away the etched metal substances.

[0014] The semiconductor device manufacturing system 100 includes a laser emitting device 10, a light collecting device 20, and a controller 30. The controller 30 is coupled to the laser emitting device 10 and the light collecting device 20.

[0015] The laser emitting device 10 is configured to form a scanning spot on the metal layer 402 on the substrate 401 using the target laser beam L1 to etch the metal layer 402. The principle of the target laser beam L1 etching the metal layer 402 is that the target laser beam L1 ablates the metal layer 402 at the scanning spot, and the ablated material is blown away by an inert gas to achieve the etching of the metal layer 402. During the ablation process, when the target laser beam L1 interacts with the metal surface at the scanning spot, high temperature is generated. The high temperature causes the metal at the scanning spot to evaporate and ionize, forming a plasma, which emits light of a specific wavelength when de-excited.

[0016] Figure 2 A schematic structural diagram of the laser emitting device 10 provided in the exemplary embodiments of the present application is shown.

[0017] Referring to Figure 2 , the laser emitting device 10 comprises a laser emitter 101. The laser emitter 101 is configured to emit an initial laser beam L0. The initial laser beam L0 can be a pulsed laser beam, and the pulse width of the pulsed laser beam is femtoseconds (10 -15 s) to picoseconds (10 -12 s), i.e., the initial laser beam L0 has an extremely short pulse duration, and the target laser beam L1 obtained by processing the initial laser beam L0 also has an extremely short pulse duration, which can improve the processing precision of the metal layer 402. Moreover, due to the extremely short pulse time, the laser energy is deposited in the metal layer 402 for a very limited time, reducing heat diffusion. This means that the heat-affected zone is very small, reducing the risk of thermal damage and deformation of the metal layer 402 and maintaining the integrity of the area around the scanning spot. Furthermore, due to the extremely short pulse time, the target laser beam L1 can remove material in a non-thermal manner, reducing the phenomenon of re-deposition of molten material, which helps to improve the quality and cleanliness of the etched surface.

[0018] In some embodiments, when the initial laser beam L0 is a pulsed laser beam, the pulse emission frequency of the initial laser beam L0 is 1 kHz to 10 MHz to provide better etching speed and etching precision.

[0019] In some embodiments, the power of the initial laser beam L0 can be greater than or equal to 10 W.

[0020] In some embodiments, the wavelength of the initial laser beam L0 includes at least one of 193 nm~355 nm and 1030 nm~1064 nm. When the wavelength of the initial laser beam L0 includes 193 nm~355 nm, the initial laser beam L0 includes an ultraviolet waveband laser beam, which ensures that the target laser beam L1 can achieve high-precision, high-absorption, and low-heat-impact etching. When the wavelength of the initial laser beam L0 includes 1030 nm~1064 nm, the initial laser beam L0 includes a near-infrared laser beam, which has deeper penetration for a metal layer 402 with a relatively large thickness.

[0021] The number of laser emitters 101 can be one or more. The plurality of laser emitters 101 can be the same or different. According to the reflectivity, material, thickness, and heat impact requirements of the metal layer 402, one laser emitter or a plurality of laser emitters can be selected to cooperate to achieve etching of the metal layer 402.

[0022] In some embodiments, the laser emitting device 10 can include a first laser emitter and a second laser emitter, the first laser emitter being configured to emit a first initial laser beam L0 with a wavelength of 193 nm~355 nm, and the second laser emitter being configured to emit a second initial laser beam L0 with a wavelength of 1030 nm~1064 nm. During etching of the metal layer 402, a beam combining assembly in the laser emitting device 10 can combine the first initial laser beam L0 and the second initial laser beam L0 to etch the metal layer 402 by combining the respective advantages of the two laser beams.

[0023] In some embodiments, referring to Figure 2 , the laser emitting device 10 further includes a beam control assembly 102 configured to adjust the initial laser beam L0 to form a target laser beam L1. In this way, the initial laser beam L0 is adjusted to obtain the target laser beam L1.

[0024] In some embodiments, the beam control assembly 102 can include a spot shaping element 103 located in the path of the initial laser beam L0. The spot shaping element 103 is configured to shape the spot of the initial laser beam L0 so that the spot shape of the target laser beam L1 is shaped as a ring. Since the ring-shaped target laser beam L1 can provide more uniform energy distribution, it reduces the over-etching of the central region of the scanning spot. Moreover, since the energy distribution of the ring-shaped target laser beam L1 is in the ring-shaped region, it improves the heat accumulation in the central region of the scanning spot to reduce the thermal damage to the substrate 401. In addition, the ring-shaped target laser beam L1 can cover a larger area in one scan, shortening the etching time.

[0025] In some embodiments, the ring can be a circular ring or an elliptical ring.

[0026] In some embodiments, the spot shaping element 103 includes, but is not limited to, a vortex phase plate.

[0027] In some embodiments, the maximum diameter of the annular target laser beam L1 is less than or equal to 5 microns, so as to improve the etching precision of the target laser beam L1 on the metal layer 402 and reduce the heat-affected zone.

[0028] In some embodiments, referring to Figure 2 , the beam control assembly 102 further includes a spatial light modulator 104. The spatial light modulator 104 is configured to adjust the initial laser beam L0 to adjust at least one of the phase and the amplitude of the target laser beam L1, before the spot shaping element 103 shapes the spot of the initial laser beam L0. Since the spatial light modulator 104 is capable of dynamically adjusting the initial laser beam L0, the target laser beam L1 can meet diversified etching requirements.

[0029] In some embodiments, referring to Figure 2 , the beam control assembly 102 further includes a galvanometer module 105, which is configured to adjust the initial laser beam L0 after being shaped by the spot shaping element 103, so as to adjust the position of the scanning spot of the target laser beam L1 on the metal layer 402. In this way, the scanning spot is accurately positioned on the portion of the metal layer 402 that needs to be etched by the galvanometer module 105, thereby improving the control ability of the target laser beam L1.

[0030] In some embodiments, the galvanometer module 105 can include one or more reflecting mirrors and a galvanometer motor configured to drive the rotation or oscillation of the one or more reflecting mirrors.

[0031] In some embodiments, the beam control assembly 102 further includes a focusing element 106, which is configured to focus the initial laser beam L0 after being adjusted by the galvanometer module 105 to form the target laser beam L1. In this way, the target laser beam L1 can achieve higher etching precision, reduce the heat-affected zone, and reduce the risk of thermal damage to the substrate 401.

[0032] In some embodiments, the focusing element 106 can include, but is not limited to, an F-theta lens.

[0033] The light collection device 20 is configured to collect the real-time emission light generated by the ablated metal layer 402 at the scanning spot in response to the target laser beam L1 at a preset collection frequency, and generate real-time plasma spectrum data of the ablated metal at the scanning spot based on the real-time emission light. The real-time plasma spectrum data includes characteristic wavelength data and corresponding real-time intensity data of the current ablated metal element. In this way, the specific wavelength light emitted by the ablated metal layer 402 at the scanning spot in response to the target laser beam L1 is collected in real time to obtain the real-time plasma spectrum data of the ablated metal at the scanning spot, so as to monitor the type and residual amount of the ablated metal at the scanning spot in real time.

[0034] It should be noted that different metal ions emit light of different wavelengths when ablated, and therefore the type of the metal ablated at the scanning spot at the moment can be determined based on the real-time plasma spectrum data. For example, the characteristic spectrum of aluminum (Al) includes 396.15 nm (Al I line) and 309.27 nm (Al II line). The characteristic spectrum of copper (Cu) includes 521.82 nm (Cu I line) and 324.75 nm (Cu II line). The characteristic spectrum of titanium (Ti) includes 334.94 nm (Ti I line) and 336.12 nm (Ti II line).

[0035] In addition, as the metal at the scanning spot is gradually removed, the concentration of the metal ions generated by the high temperature of the target laser beam L1 decreases, resulting in a gradual decrease in the real-time intensity data. Therefore, judging the etching endpoint of the ablated scanning spot based on the real-time plasma spectrum data can improve the etching accuracy of the laser beam at the scanning spot and improve the performance of the semiconductor device.

[0036] In addition, since the light collection device 20 collects the real-time emission light generated by the ablated metal layer 402 at the scanning spot in real time, when the metal layer 402 includes one or more metal films, the light collection device 20 can collect the initial intensity data of each metal film ablated by the target laser beam L1.

[0037] In some embodiments, the preset collection frequency can be greater than or equal to 1 kHz to quickly capture the real-time emission light and improve the accuracy of the real-time plasma spectrum data obtained by the light collection device 20.

[0038] In some embodiments, the light collection device 20 can include an image collector and a fiber-optic spectrometer. The image collector is configured to collect the real-time emission light generated by the ablated metal layer 402 at the scanning spot to generate emission light data. The fiber-optic spectrometer is connected to the image collector and configured to obtain the emission light data from the image collector and generate real-time plasma spectrum data of the metal element in the metal layer 402 at the scanning spot based on the emission light data.

[0039] The controller 30 is coupled with the laser emitting device 10 and the light collecting device 20. The controller 30 is configured to acquire real-time plasma spectrum data from the light collecting device 20, and control whether the laser emitting device stops etching the metal layer 402 at the scanning spot by the target laser beam L1 based on the real-time plasma spectrum data. In this way, the real-time plasma spectrum data of the etched metal is acquired based on the real-time emission light collected during the etching of the metal by the target laser beam, so as to monitor the type of the metal being etched and the residual amount of the metal in real time, determine the etching endpoint of the target laser beam L1 at the scanning spot, thereby improving the etching precision of the target laser beam L1 at the scanning spot and improving the performance of the semiconductor device.

[0040] In some embodiments, controlling whether the laser emitting device 10 stops etching the metal layer 402 at the scanning spot by the target laser beam L1 based on the real-time plasma spectrum data comprises: determining characteristic wavelength data of the etched metal element and real-time intensity data corresponding to the characteristic wavelength data based on the real-time plasma spectrum data; determining a relative intensity coefficient based on the real-time intensity data and initial intensity data corresponding to the real-time intensity data; controlling the laser emitting device 10 to stop etching the metal layer 402 at the scanning spot by the target laser beam L1 when the relative intensity coefficient is less than or equal to a relative intensity threshold; and controlling the laser emitting device 10 to continue etching the metal layer 402 at the scanning spot by the target laser beam L1 when the relative intensity coefficient is greater than the relative intensity threshold.

[0041] In some embodiments of the present application, the type of the metal being etched at the scanning spot and the real-time intensity data of the metal are determined based on the real-time plasma spectrum data. Then, a relative intensity coefficient is determined based on the real-time intensity data of the etched metal and the initial intensity data, the relative intensity coefficient representing the relative size of the intensity of the emission light generated by the ionization and recombination of the current remaining metal of the type and the intensity of the emission light generated by the ionization and recombination of the metal of the type when the etching of the metal starts. Finally, if the relative intensity coefficient is less than or equal to the relative intensity threshold, it can be judged that the residual amount of the metal of the type is small, and the controller 30 controls the laser emitting device 10 to stop etching at the scanning spot. If the relative intensity coefficient is greater than the relative intensity threshold, it can be judged that the residual amount of the metal of the type is still relatively large, and the controller 30 controls the laser emitting device 10 to continue etching the metal layer at the scanning spot until the relative intensity coefficient is less than the relative intensity threshold. In this way, the etching process of the target laser beam L1 at the scanning spot becomes controllable, and the etching precision is relatively high.

[0042] In some embodiments, the relative intensity coefficient is equal to a percentage of a ratio of the real-time intensity data to the initial intensity data. In this way, the smaller the relative intensity coefficient, the smaller the intensity of the emission light generated by the ionization of the current remaining metal of the kind after back reflection, which also indicates that the current remaining amount of the metal of the kind at the scanning spot is smaller. Conversely, the larger the relative intensity coefficient, the larger the current remaining amount of the metal of the kind at the scanning spot.

[0043] It should be noted that when the metal layer 402 includes a plurality of metal films of different materials, the metal film at the bottom is etched by the target laser beam L1 to a relative intensity coefficient less than or equal to the relative intensity threshold value as the end point of etching. For example, when the metal layer 402 includes a titanium layer and an aluminum layer stacked in sequence, the titanium layer is etched by the target laser beam L1 to a relative intensity coefficient less than or equal to the relative intensity threshold value as the end point of etching by the target laser beam L1.

[0044] In some embodiments, the relative intensity threshold value can be less than or equal to 10% to ensure that the relative intensity coefficient is less than or equal to the relative intensity threshold value, and the remaining amount of the metal layer is less or substantially no remaining.

[0045] In some embodiments, before the laser emitting device 10 uses the target laser beam L1 to form a scanning spot on the metal layer 402 on the substrate 401, the controller 30 is further configured to: obtain characteristic values of the metal layer 402 on the substrate 401 and characteristic values of the substrate 401; obtain a target pattern representing the metal layer 402 after etching, and determine a target etching path of the metal layer 402 etched by the target laser beam L1 based on the target pattern; determine parameters of the target laser beam L1 based on the characteristic values of the metal layer 402, the characteristic values of the substrate 401, and the target etching path.

[0046] In some embodiments of the present application, the parameters of the target laser beam L1 are determined based on the characteristic values of the substrate 401 and the metal layer 402 and the target etching path corresponding to the target pattern, which improves the etching efficiency and etching accuracy of the target laser beam L1 etching the metal layer 402, and reduces the risk of thermal damage to the substrate 401 caused by the target laser beam L1.

[0047] The metal layer 402 includes one or more metal films. In some embodiments, the characteristic values of the metal layer 402 include the material of each metal film and the thickness of each metal film.

[0048] In some embodiments, the characteristic values of the substrate 401 include the material of the substrate 401.

[0049] In some embodiments, the target etching path is designed based on etching the target pattern once with the target laser beam L1.

[0050] In some embodiments, the parameter of the target laser beam L1 includes an energy density, the energy density being greater than or equal to a first preset energy density and less than a second preset energy density. The first preset energy density represents a minimum energy density at which the metal layer 402 is ablated by the laser beam, and the second preset energy density represents a minimum energy density at which the substrate 401 is damaged by the laser beam. In this way, it is ensured that the target laser beam L1 can etch the metal layer 402 while reducing the risk of damage to the substrate 401 by the target laser beam L1.

[0051] In some embodiments, the ratio of the energy density to the first preset energy density is greater than 1.2 and less than or equal to 2. In this way, it is ensured that the energy density of the target laser beam L1 is large enough to increase the etching rate of the metal layer 402.

[0052] In some embodiments, the metal layer can include a first metal film and a second metal film stacked, the second metal film being located between the first metal film and the substrate, and the material of the first metal film being different from the material of the second metal film. The energy density of the target laser beam L1 can include a first energy density for the first metal film and a second energy density for the second metal film, the first energy density being different from the second energy density. In this way, according to the different materials of the metal, the matching energy density is selected to improve the etching efficiency and etching precision of the metal layer.

[0053] In some embodiments, in the case where the metal layer includes the first metal film and the second metal film stacked, the controller 30 is further configured to control the energy density of the target laser beam L1 emitted by the laser emitting device 10 to change from a first energy density to a second energy density when the obtained characteristic wavelength data changes from first characteristic wavelength data corresponding to the metal element in the first metal film to second characteristic wavelength data corresponding to the metal element in the second metal film. In this way, by obtaining the real-time plasma spectrum data, the process parameters of the target laser beam L1 for etching the metal layer 402 can also be adjusted in real time to improve the etching precision at the scanning spot.

[0054] In some embodiments, the parameter of the target laser beam L1 further includes a wavelength, a pulse width, and a scanning speed of the target laser beam L1.

[0055] For example, when the metal layer 402 includes an aluminum layer with a thickness of 0.1 microns to 5 microns, and the substrate 401 includes SiC, the wavelength of the target laser beam L1 can be 248 nm, the pulse width can be 500 fs, the energy density can be 3 J / cm, and the scanning speed can be 200 mm / s.

[0056] In some embodiments, the controller 30 can include a computer and a PLC controller, the computer being coupled with the PLC controller. The PLC controller is connected with the laser emitting device 10 and the light collecting device 20 to control the laser emitting device 10 and the light collecting device 20.

[0057] Based on the same inventive concept, the embodiments of the present application also provide a manufacturing method of a semiconductor device. Figure 3 A flowchart of the manufacturing method of the semiconductor device provided in the exemplary embodiments of the present application is shown in FIG. 1. Referring to FIG. 1, the manufacturing method of the semiconductor device includes steps S101-S103. Figure 1 and Figure 3 The manufacturing method of the semiconductor device includes steps S101-S103.

[0058] In step S101, the laser emitting device 10 forms a scanning spot on the metal layer 402 on the substrate 401 using the target laser beam L1 to etch the metal layer 402.

[0059] In step S102, the light collecting device 20 collects real-time emission light generated by the etched metal at the scanning spot when the plasma is de-excited according to a preset collection frequency, and generates real-time plasma spectrum data of the etched metal at the scanning spot based on the real-time emission light.

[0060] In step S103, the controller 30 acquires the real-time plasma spectrum data from the light collecting device 20, and controls whether to stop the laser emitting device 10 from etching the metal layer 402 at the scanning spot using the target laser beam L1 based on the real-time plasma spectrum data.

[0061] In the manufacturing method of the semiconductor device in the embodiments of the present application, high temperature is generated when the target laser beam interacts with the metal surface at the scanning spot. The high temperature causes the metal at the scanning spot to evaporate and ionize to form a plasma, and the plasma emits light of specific wavelengths when de-excited. The real-time plasma spectrum data of the etched metal is acquired based on the collected real-time emission light to monitor the type and residual amount of the etched metal at the current scanning spot in real time, and to determine the etching endpoint of the target laser beam L1 at the scanning spot, thereby improving the etching precision of the target laser beam L1 at the scanning spot and improving the performance of the semiconductor device.

[0062] In some embodiments, based on the real-time plasma spectrum data, determining whether to stop the laser emitting device 10 from etching the metal layer 402 at the scanning spot using the target laser beam L1 includes: acquiring characteristic wavelength data of the etched metal element and real-time intensity data corresponding to the characteristic wavelength data based on the real-time plasma spectrum data; determining a relative intensity coefficient based on the real-time intensity data and starting intensity data corresponding to the real-time intensity data; When the relative intensity coefficient is less than or equal to the relative intensity threshold value, the laser emitting device 10 is controlled to stop etching the metal layer 402 at the scanning spot by using the target laser beam L1. When the relative intensity coefficient is greater than the relative intensity threshold value, the laser emitting device 10 is controlled to continue etching the metal layer 402 at the scanning spot by using the target laser beam L1.

[0063] In summary, in the method and system for manufacturing the semiconductor device, the laser emitting device uses the target laser beam to form a scanning spot on the metal layer on the substrate to etch the metal layer. When the target laser beam interacts with the metal surface at the scanning spot, high temperature is generated. The high temperature causes the metal at the scanning spot to evaporate and ionize to form plasma, and the plasma emits light of a specific wavelength when it de-excites. The light collecting device collects the real-time emission light generated by the de-excitation of the metal layer at the scanning spot after being ionized, and generates real-time plasma spectrum data of the etched metal at the scanning spot based on the real-time emission light. The controller is coupled with the laser emitting device and the light collecting device, and is used to obtain the real-time plasma spectrum data from the light collecting device, and control whether the laser emitting device stops etching the metal layer at the scanning spot by using the target laser beam based on the real-time plasma spectrum data. Thus, the real-time plasma spectrum data of the etched metal is obtained based on the real-time emission light collected during the etching of the metal by the target laser beam, so as to monitor the type and residual amount of the etched metal at the current scanning spot in real time, and then determine the etching endpoint of the target laser beam at the scanning spot, thereby improving the etching precision of the target laser beam at the scanning spot and improving the performance of the semiconductor device.

[0064] The above description of the embodiments is only used to help understand the technical solutions of the present application and its core idea; those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can still be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A manufacturing system of a semiconductor device, characterized by comprising: The application relates to a laser etching device and a method thereof. The laser etching device comprises: a laser emitter configured to emit an initial laser beam; a beam control assembly configured to adjust the initial laser beam to form a target laser beam.

2. The system for manufacturing a semiconductor device according to Claim 1, wherein The beam control assembly comprises a spot shaping element configured to shape a spot of the initial laser beam so that a spot shape of the target laser beam is shaped as a ring. The method comprises: emitting an initial laser beam; adjusting the initial laser beam to form a target laser beam; and controlling the target laser beam to form a scanning spot on a metal layer on a substrate.

3. The system for manufacturing a semiconductor device according to Claim 2, wherein The method further comprises:

4. The system for manufacturing a semiconductor device according to Claim 1, wherein acquiring characteristic values of the metal layer on the substrate and characteristic values of the substrate; acquiring a target pattern representing the metal layer after being etched, and determining a target etching path of the metal layer etched by the target laser beam based on the target pattern; determining parameters of the target laser beam based on the characteristic values of the metal layer, the characteristic values of the substrate, and the target etching path. The parameters of the target laser beam comprise an energy density, the energy density being greater than or equal to a first preset energy density and less than a second preset energy density; wherein the first preset energy density represents a minimum energy density at which the metal layer is ablated by a laser beam, and the second preset energy density represents a minimum energy density at which the substrate is damaged by a laser beam.

5. The system for manufacturing a semiconductor device according to Claim 4, wherein The laser emitter is configured to emit an initial laser beam.

6. The system for manufacturing a semiconductor device according to Claim 1, wherein The beam control assembly is configured to adjust the initial laser beam to form a target laser beam. The beam control assembly comprises a spot shaping element configured to shape a spot of the initial laser beam so that a spot shape of the target laser beam is shaped as a ring. ​ 7. The system for manufacturing a semiconductor device according to Claim 6, wherein ​ 8. The system for manufacturing a semiconductor device according to Claim 7, wherein The light beam control assembly comprises a spatial light modulator configured to adjust the initial laser beam to adjust at least one of a phase and an amplitude of the target laser beam before the spot shaping element shapes a spot of the initial laser beam.

9. A method of manufacturing a semiconductor device, characterized by The method comprises the following steps: The laser emitting device forms a scanning spot on the metal layer on the substrate by using the target laser beam to etch the metal layer; The light collecting device collects real-time emission light generated by the etched metal layer at the scanning spot in a plasma state according to a preset collection frequency, and generates real-time plasma spectrum data of the etched metal at the scanning spot based on the real-time emission light; The controller obtains the real-time plasma spectrum data from the light collecting device, and controls whether the laser emitting device stops etching the metal layer at the scanning spot by using the target laser beam based on the real-time plasma spectrum data.

10. The method of manufacturing a semiconductor device according to Claim 9, wherein The control of whether the laser emitting device stops etching the metal layer at the scanning spot by using the target laser beam based on the real-time plasma spectrum data comprises: determining characteristic wavelength data of the etched metal element and real-time intensity data corresponding to the characteristic wavelength data based on the real-time plasma spectrum data; determining a relative intensity coefficient based on the real-time intensity data and starting intensity data corresponding to the real-time intensity data; when the relative intensity coefficient is less than or equal to a relative intensity threshold value, controlling the laser emitting device to stop etching the metal layer at the scanning spot by using the target laser beam; when the relative intensity coefficient is greater than the relative intensity threshold value, controlling the laser emitting device to continue etching the metal layer at the scanning spot by using the target laser beam.

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