Semiconductor device and resin composition

Abstract

Provided are a semiconductor device including an interlayer insulating film having a high tensile elongation, and a resin composition. A semiconductor device includes a semiconductor chip, a sealing material covering the semiconductor chip, and a rewiring layer including a wiring electrically connecting the semiconductor chip and an external terminal, and an interlayer insulating film covering a periphery of the wiring. The area of the rewiring layer in plan view is larger than that of the semiconductor chip, and the tensile elongation of the interlayer insulating film at 25 DEG C is 15% or more.

Description

TECHNICAL FIELD

[0001] The present application relates to a semiconductor device and a resin composition. BACKGROUND

[0002] With the development of miniaturization, weight reduction, and high functionality of electronic devices, semiconductor packages mounted on electronic devices are also required to be miniaturized, weight-reduced, and mountable at high density on mounting substrates. In this case, a semiconductor packaging technology called wafer level chip size packaging (WL-CSP) or wafer level packaging (WLP) has been proposed. The WL-CSP or WLP refers to a semiconductor package in which a part of a semiconductor substrate (silicon wafer) remains exposed without internal wiring based on bonding wires and which has approximately the same size as that of the semiconductor substrate.

[0003] The WLP has a fan-in type and a fan-out type. The fan-in type WLP is one in which external electrodes (external terminals) as semiconductor devices are provided in an area having the same size as that of a semiconductor chip. For example, the fan-in type WLP forms a rewiring layer including a wiring and an interlayer insulating film in an area having the same size as that of a semiconductor chip, and provides external electrodes (external terminals). The fan-out type WLP is one in which external electrodes (external terminals) as semiconductor devices are provided in an area larger than that of a semiconductor chip. The fan-out type WLP (hereinafter also referred to as "FO-WLP type") semiconductor device is one in which a semiconductor chip is sealed with a sealing material including a resin, a rewiring layer including a wiring and an interlayer insulating film is formed in an area larger than that of the semiconductor chip and in contact with both the semiconductor chip and the sealing material that seals the periphery of the semiconductor chip, and external electrodes (external terminals) are provided.

[0004] For example, Patent Document 1 discloses a FO-WLP type semiconductor device that includes a semiconductor chip, a sealing material covering the semiconductor chip, and a rewiring layer having an area larger than that of the semiconductor chip in plan view.

[0005] PRIOR ART DOCUMENTS

[0006] PATENT DOCUMENTS

[0007] Patent Document 1: Japanese Patent Application Publication No. 2019-29555 SUMMARY

[0008] PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] With regard to the redistribution layer provided on the semiconductor device of the FO-WLP type, since the semiconductor chip and the sealing material are dissimilar materials having different linear expansion coefficients, peeling of the semiconductor chip and the sealing material and the like due to repeated thermal cycles of high and low temperatures can occur due to the difference in the linear expansion coefficients. The redistribution layer in contact with the two dissimilar materials of the semiconductor chip and the sealing material having different linear expansion coefficients can also be peeled off due to the difference in the linear expansion coefficients of the semiconductor chip and the sealing material, and cracks can occur in the wiring included in the redistribution layer when repeated thermal cycles are performed.

[0010] Therefore, an object of the present application is to provide a semiconductor device including an interlayer insulating film and a resin composition, which can suppress peeling and cracking of materials due to a difference in linear expansion coefficients even when in contact with two materials having different linear expansion coefficients, and which has a high tensile elongation.

[0011] Approach to solving the problem

[0012] The means for solving the aforementioned technical problem are as follows, and the present application includes the following approach.

[0013] [1] A semiconductor device characterized by comprising:

[0014] a semiconductor chip;

[0015] a sealing material covering the semiconductor chip; and

[0016] a redistribution layer including a wiring electrically connecting the semiconductor chip and an external terminal, and an interlayer insulating film covering the periphery of the wiring,

[0017] the area of the redistribution layer in plan view is larger than that of the semiconductor chip,

[0018] the tensile elongation of the interlayer insulating film at 25°C is 15% or more.

[0019] [2] The semiconductor device according to the aforementioned [1], wherein the interlayer insulating film is in direct contact with at least a part of the semiconductor chip and at least a part of the sealing material.

[0020] [3] The semiconductor device according to the aforementioned [1] or [2], wherein at least a part of the semiconductor chip and at least a part of the sealing material are adjacent and present on the same plane, and the interlayer insulating film is in direct contact with at least a part of the semiconductor chip and at least a part of the sealing material present on the same plane.

[0021] [4] The semiconductor device according to any one of the preceding [1] to [3], wherein a dielectric loss tangent (tan δ) of the interlayer insulating film measured at a dielectric resonance frequency of 10 GHz is 0.010 or less.

[0022] [5] The semiconductor device according to any one of the preceding [1] to [4], wherein the interlayer insulating film is formed of a resin composition containing a thermosetting resin having an unsaturated double bond at a terminal end.

[0023] [6] The semiconductor device according to any one of the preceding [1] to [5], wherein the interlayer insulating film is formed of a resin composition containing a polyphenylene ether having an unsaturated double bond at a terminal end and an elastomer.

[0024] [7] The semiconductor device according to any one of the preceding [1] to [6], wherein the interlayer insulating film is formed of a resin composition containing a polyphenylene ether having an unsaturated double bond at a terminal end and an elastomer, a ratio of a hard segment to a soft segment contained in the elastomer being 1:99 to 45:55.

[0025] [8] The semiconductor device according to the preceding [6] or [7], wherein the elastomer is a styrene-based thermoplastic elastomer.

[0026] [9] The semiconductor device according to any one of the preceding [1] to [8], wherein the sealing material contains an epoxy resin.

[0027]

[10] A resin composition for a wafer level package type semiconductor device, characterized by being a resin composition containing (A) a thermosetting resin having an unsaturated double bond at a terminal end and (B) an elastomer,

[0028] a cured product of the resin composition has a tensile elongation of 15% or more at 25°C.

[0029]

[11] The resin composition according to the preceding

[10] , further containing (C) a solvent.

[0030]

[12] The resin composition according to the preceding

[11] , having a 1st viscosity in a range of 300 mPa-s to 4000 mPa-s measured at 25°C and 10 rpm using a rotational viscometer.

[0031]

[13] The resin composition according to the preceding

[12] , having a 2nd viscosity in a range of 200 mPa-s to 4200 mPa-s measured at 25°C and 1 rpm using a rotational viscometer, and a thixotropic index TI, which is a ratio of the 2nd viscosity to the 1st viscosity, being 0.5 to 3.0.

[0032]

[14] The resin composition according to any one of the preceding

[10] to

[13] , wherein the content of the component (B) in the resin composition is 25 to 90 mass% with respect to 100 mass% of the total of the component (A) and the component (B).

[0033]

[15] A semiconductor device comprising an interlayer insulating film obtained by curing the resin composition according to any one of the preceding

[10] to

[14] around a wiring electrically connecting a semiconductor chip and an external terminal.

[0034] Effects of the Invention

[0035] According to the present application, it is possible to provide a semiconductor device comprising an interlayer insulating film and a resin composition, which can suppress peeling and cracking of a material caused by a difference in linear expansion coefficient even in a case where two materials having different linear expansion coefficients are in contact, and which has a large tensile elongation. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1 A cross-sectional schematic view showing the general structure of a semiconductor device of the FO-WLP type.

[0037] Figure 2 A plan view of a semiconductor chip and an interlayer insulating film of a semiconductor device of the FO-WLP type.

[0038] Figure 3 A perspective schematic view showing a semiconductor chip and a sealing material of a semiconductor device of the FO-WLP type and a re-wiring layer.

[0039] Figure 4 A perspective schematic view showing a semiconductor chip and a sealing material of a semiconductor device of the FO-WLP type. DETAILED DESCRIPTION

[0040] The semiconductor device and the resin composition of the present application will be described below based on embodiments. The present application can include an interlayer insulating film of a semiconductor device obtained by curing a resin composition. However, the embodiments shown below are examples for embodying the technical idea of the present application, and the present application is not limited to the semiconductor device and the resin composition, or the interlayer insulating film of a semiconductor device, described below. In this specification, "~" means that the numerical value or the symbol including the numerical value recited before and after it is included as an upper limit value and a lower limit value, and indicates the above to the below. In addition, the components shown in the claims are by no means limited to the components of the embodiments. In particular, the dimensions, materials, shapes, configurations, and the like of the components recited in the embodiments are not intended to limit the scope of the present application to them only, but are mere illustrative examples, unless otherwise specifically recited. The components shown in the drawings can sometimes be exaggerated in size, positional relationship, and the like, and the shape can sometimes be simplified, and the scale can sometimes differ from drawing to drawing.

[0041] The semiconductor device of the embodiment of the present application has a semiconductor chip, a sealing material covering the semiconductor chip, and a rewiring layer, the rewiring layer includes a wiring electrically connecting the semiconductor chip and an external terminal, and an interlayer insulating film covering the periphery of the wiring, the area of the rewiring layer in plan view is larger than that of the semiconductor chip, and the tensile elongation of the interlayer insulating film at 25°C is 15% or more. In the semiconductor device, since the area of the rewiring layer in plan view is larger than that of the semiconductor chip, it is preferable that the rewiring layer directly contacts at least a part of the semiconductor chip and at least a part of the sealing material. It can also be that at least a part of the semiconductor chip and at least a part of the sealing material are adjacent and present on the same plane, and the interlayer insulating film directly contacts at least a part of the semiconductor chip and at least a part of the sealing material present on the same plane. When the tensile elongation of the interlayer insulating film of the rewiring layer at 25°C is 15% or more, peeling of dissimilar materials between the semiconductor chip and the sealing material due to expansion and contraction caused by thermal cycles in which the temperature is repeatedly changed from a lower temperature at normal temperature to a higher temperature at the time of operation of the semiconductor device due to the difference in the linear expansion coefficient of each of the semiconductor chip and the sealing material can be suppressed, and cracking of the wiring contained in the rewiring layer and the like can be suppressed. The tensile elongation of the interlayer insulating film of the rewiring layer of the semiconductor device at 25°C is preferably 20% or more, more preferably 25% or more, and further preferably 30% or more. From the viewpoint of being able to suppress the effects caused by plastic deformation of the interlayer insulating film even in the case of contact with two kinds of materials having different linear expansion coefficients from the semiconductor chip and the sealing material, the tensile elongation of the interlayer insulating film of the rewiring layer of the semiconductor device at 25°C can be 500% or less, can be 480% or less, is preferably 450% or less, can be 400% or less, and can be 350% or less. That is, the tensile elongation of the interlayer insulating film of the rewiring layer of the semiconductor device at 25°C is preferably 15 to 500%, more preferably 20 to 480%, further preferably 25 to 450%, and particularly preferably 30 to 350%.

[0042] The tensile elongation of the interlayer insulating film of the rewiring layer of the semiconductor device can be measured as follows: using a resin composition that can constitute an interlayer insulating film for a FO-WLP type semiconductor device, using a bar-shaped test piece (film sample) having a width of 15 mm, a length of 200 mm, and a thickness of 30 μm, and using a table-top precision universal testing machine (for example, AUTOGRAPH AGS-J series, manufactured by Shimadzu Corporation).

[0043] As for the tensile elongation of the interlayer insulating film of the rewiring layer of the semiconductor device, a test piece of 15 mm in width, 200 mm in length, and 30 μm in thickness was prepared from a cured product obtained by curing a resin composition that can constitute an interlayer insulating film for a semiconductor device, and the test piece was fixed to the upper and lower tensile grips of a table-type precision universal testing machine in such a manner that the length between the grips was 100 mm. The test piece was stretched at a speed of 200 mm / min in the upward direction, and the tensile elongation calculated from the breaking distance by the following formula (1) was taken as the tensile elongation of the interlayer insulating film of the rewiring layer of the semiconductor device.

[0044] Tensile elongation (%) = [(breaking distance (mm) - initial length (100 mm)] / initial length (100 mm) x 100 (1)

[0045] Figure 1 An example of a semiconductor device is shown, and a cross-sectional schematic diagram showing the general structure of a FO-WLP type semiconductor device is shown. The semiconductor device 1 is provided with a semiconductor chip 2, a sealing material 3 (molding resin) covering the semiconductor chip 2, and a rewiring layer 6, and the rewiring layer 6 includes a wiring 4 connecting the semiconductor chip 2 and an external terminal 7, and an interlayer insulating film 5 covering the periphery of the wiring 4. Figure 2 In a plan view in which the sealing material 3 is not shown, in which the rewiring layer 6 and the semiconductor chip 2 are viewed from above, the area of the rewiring layer 6 is larger than that of the semiconductor chip 2 in plan view. The rewiring layer 6 is in direct contact with at least a portion of the semiconductor chip 2 and at least a portion of the sealing material 3, and in particular, the interlayer insulating film 5 of the rewiring layer 6 is in direct contact with both at least a portion of the semiconductor chip 2 and at least a portion of the sealing material 3.

[0046] A plurality of terminals 2a are provided in the semiconductor chip 2. The plurality of terminals 2a provided in the semiconductor chip 2 are electrically connected to the wiring 4 of the rewiring layer 6. One end of the wiring 4 is connected to the terminal 2a of the semiconductor chip 2, and the other end of the wiring 4 is connected to the external terminal 7 such as a solder bump. The periphery of the wiring 4 is covered by the interlayer insulating film 5.

[0047] Figure 3 A partial structure of a semiconductor device is shown, and a perspective schematic diagram showing the semiconductor chip 2, the sealing material 3 covering the semiconductor chip 2, and the rewiring layer 6 in a state of being separated from the semiconductor chip 2 and the sealing material 3 is shown. Figure 4 A semiconductor chip 2 used in a FO-WLP type semiconductor device and a sealing material 3 covering the semiconductor chip 2 and adjacent to the semiconductor chip 2 are shown, and a perspective schematic diagram viewed from a side from which it is known that the semiconductor chip 2 and the sealing material 3 exist on the same plane is shown. Figure 4 In the drawing, the terminals and the like of the semiconductor chip 2 are not shown. As shown in the drawing, Figure 1 or Figure 4As shown, at least a part of the semiconductor chip 2 and at least a part of the sealing material 3 are preferably adjacent to and present on the same plane, and the interlayer insulating film 5 of the rewiring layer 6 is preferably in direct contact with at least a part of the semiconductor chip 2 and at least a part of the sealing material 3 adjacent to the semiconductor chip 2 present on the same plane. When the interlayer insulating film 5 having a tensile elongation of 15% or more is in contact with both at least a part of the semiconductor chip 2 and at least a part of the sealing material 3 adjacent thereto present on the same plane, the semiconductor chip 2 and the sealing material 3, which have different coefficients of linear expansion, are expanded and contracted due to repeated thermal cycles from a lower temperature at normal temperature to a higher temperature at the time of operation of the semiconductor device, and the interlayer insulating film 5 absorbs the expansion and contraction of the dissimilar materials having different coefficients of linear expansion, thereby suppressing peeling of the semiconductor chip 2 and the sealing material 3, and also suppressing cracking of the wiring 4 contained in the rewiring layer 6 and the like.

[0048] The semiconductor chip can use a chip formed of silicon or the like, or a chip in which a circuit is formed inside the semiconductor chip.

[0049] The sealing material is not particularly limited, but preferably contains an epoxy resin, and more preferably contains an inorganic filler such as silica. In addition, from the viewpoint of suppressing peeling of the semiconductor chip and the sealing material, the sealing material preferably has a coefficient of linear expansion (CTEα1) at a temperature lower than the glass transition temperature in the range of 10 to 30 ppm / °C, more preferably in the range of 10 to 20 ppm / °C, and further preferably in the range of 6 to 20 ppm / °C.

[0050] The coefficient of linear expansion (CTEα1) of the sealing material at a temperature lower than the glass transition temperature can be measured in the following manner: a cylindrical test piece having a diameter of 8 mm and a height of 20 mm is prepared, and after the test piece is cured at 150°C for 1 hour, a thermal mechanical analysis device is used to measure the average coefficient of linear expansion at 50°C to 70°C as the coefficient of linear expansion (CTEα1) at a temperature lower than the glass transition temperature under the conditions of a measurement temperature range of -30°C to 220°C, a temperature increase rate of 10°C / minute, and a compression mode.

[0051] The planar area of the rewiring layer is larger than the planar area of the semiconductor chip. The planar area S1 of the rewiring layer is preferably 1.05 times or more, more preferably 1.1 times or more, further preferably 1.2 times or more, and more further preferably 1.3 times or more, the planar area S2 of the semiconductor chip. The planar area S2 of the rewiring layer can be 50 times or less, 25 times or less, or 10 times or less, the planar area S2 of the semiconductor chip. The planar area S2 of the rewiring layer can be the same as the planar area S3 of the sealing material. The planar shape of the rewiring layer can be the same as, different from, or similar to the planar shape of the semiconductor chip.

[0052] The rewiring layer can be one layer, or a plurality of layers stacked in multiple layers. The rewiring layer can include a layer formed of only a wiring, a layer formed of only an interlayer insulating film, and a layer formed of a wiring and an interlayer insulating film covering around the wiring.

[0053] The FO-WLP-type semiconductor device can connect the semiconductor chip and the external terminal through the rewiring layer and directly conduct with the mother substrate. The FO-WLP-type semiconductor device does not need to conduct with the mother substrate via an interposer substrate or a printed wiring substrate as in a flip chip ball grid array (FC-BGA)-type semiconductor device, and can reduce the thickness of the semiconductor device compared to the FC-BGA-type semiconductor device.

[0054] The thickness of the rewiring layer can be 1 μm or more, 2 μm or more, 3 μm or more, 5 μm or more, or 10 μm or more, and can be 40 μm or less, 30 μm or less, or 20 μm or less.

[0055] The wiring can be a member having high electrical conductivity, and for example, copper can be used.

[0056] The interlayer insulating film can be formed by disposing a resin composition for a FO-WLP-type semiconductor device described below around a wiring electrically connecting the semiconductor chip and the external terminal and curing the resin composition. The rewiring layer includes the wiring electrically connecting the semiconductor chip and the external terminal, and the interlayer insulating film formed by curing the resin composition disposed around the wiring.

[0057] The components contained in the interlayer insulating film of the semiconductor device or the components contained in the resin composition for the interlayer insulating film are described below. In this specification, in accordance with the convention in the field of synthetic resins, for the components constituting the resin composition, "resin" generally indicates "high molecule", and sometimes the name including "resin" as a term generally indicating a high molecule (particularly, a synthetic high molecule) is used although the component is not a high molecule.

[0058] The interlayer insulating film is preferably formed of a resin composition containing a thermosetting resin having an unsaturated double bond at a terminal. In the resin composition for the interlayer insulating film for a semiconductor device of the FO-WLP type, the thermosetting resin having an unsaturated double bond at a terminal is also referred to as component (A) or the thermosetting resin of component (A).

[0059] The interlayer insulating film is preferably formed of a resin composition containing a polyphenylene ether having an unsaturated double bond at a terminal and an elastomer. In the resin composition for the interlayer insulating film for a semiconductor device of the FO-WLP type, the elastomer is also referred to as component (B) or the elastomer of component (B).

[0060] The resin composition for the interlayer insulating film for a semiconductor device of the FO-WLP type preferably further contains (C) a solvent. In the resin composition for the interlayer insulating film for a semiconductor device of the FO-WLP type, the solvent is also referred to as component (C) or the solvent of component (C).

[0061] With the super high speed of information transmission and the large capacity of information, electronic components are required to have high frequency characteristics. Semiconductor devices of the FO-WLP type mounted on the electronic components are also required to have high frequency characteristics. For example, excellent electrical characteristics (low dielectric constant (ε), low dielectric loss tangent (tan δ)) in a high frequency region, specifically, in a region of a frequency of 1 GHz to 10 GHz are required.

[0062] The interlayer insulating film or the resin composition for the interlayer insulating film imparts low dielectric characteristics to a cured product obtained by curing the resin composition by containing the thermosetting resin of component (A) having an unsaturated double bond at a terminal, and improves heat resistance. As the functional group containing an unsaturated double bond at a terminal, for example, any of a vinyl group, a vinylbenzyl group, a vinylidene group, a vinylidene group, an acryl group, or a methacryl group can be cited. The thermosetting resin having an unsaturated double bond at a terminal is preferably a polyphenylene ether resin having a functional group containing an unsaturated double bond at a terminal. The polyphenylene ether resin is also referred to as a PPE resin. Component (A) is not particularly limited as long as it has a functional group containing an unsaturated double bond at a terminal and has a polyphenylene ether in the skeleton. Component (A) is particularly preferably a polyphenylene ether resin having a vinyl group or a styryl group at a terminal. By having a vinyl group or a styryl group at a terminal, low dielectric characteristics can be obtained. In the case where the thermosetting resin having an unsaturated double bond at a terminal is a polyphenylene ether resin, the polyphenylene ether resin of component (A) is sometimes referred to as component (A) in the resin composition for the interlayer insulating film.

[0063] The PPE resin of component (A) preferably contains a PPE resin represented by the following formula (1).

[0064]

[0065] [In formula (1), X represents a p-valent unsubstituted or substituted aromatic hydrocarbon group,

[0066] Y represents a non-substituted or substituted phenol repeating unit represented by the following formula (2),

[0067]

[0068] [In formula (2), R 1 ~R 4 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkenylcarbonyl group.]

[0069] Z represents a terminal functional group containing an unsaturated double bond, represents a vinyl group, a vinylidene group, a (meth)acryloyl group represented by the following formula (3), or a styryl group represented by the following formula (4),

[0070]

[0071] [In formula (3), R 5 represents a hydrogen atom or an alkyl group.]

[0072]

[0073] [In formula (4), R 6 ~R 8 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, or an alkynyl group.]

[0074] m represents an integer of 1 to 100,

[0075] n represents 0 or an integer of 1 to 6,

[0076] p represents an integer of 1 to 4.]

[0077] The PPE resin of component (A) preferably contains at least one selected from the group consisting of a modified PPE resin represented by the following formula (5) and a modified PPE resin represented by the following formula (6).

[0078]

[0079] [In formula (5), R 5 represents a hydrogen atom or an alkyl group,

[0080] X represents a p-valent non-substituted or substituted aromatic hydrocarbon group,

[0081] Y represents a non-substituted or substituted phenol repeating unit represented by the aforementioned formula (2),

[0082] m represents an integer of 1 to 100,

[0083] n represents 0 or an integer of 1 to 6,

[0084] p represents an integer of 1 to 4.]

[0085]

[0086] [In formula (6), R 6 R 8 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, or an alkynyl group,

[0087] X represents a p-valent non-substituted or substituted aromatic hydrocarbon group,

[0088] Y represents a non-substituted or substituted phenol repeating unit represented by the aforementioned formula (2),

[0089] m represents an integer of 1 to 100,

[0090] n represents 0 or an integer of 1 to 6,

[0091] p represents an integer of 1 to 4.

[0092] Generally, an x-valent (x represents an integer of 1 or more) hydrocarbon group refers to an x-valent group produced by removing x hydrogen atoms from a carbon atom of a hydrocarbon. X represents a p-valent non-substituted or substituted aromatic hydrocarbon group, and X refers to a 1 to 4 valent group produced by removing 1 to 4 hydrogen atoms from a carbon atom of an aromatic hydrocarbon which can be substituted or unsubstituted.

[0093] The term "alkyl group" refers to a 1-valent saturated hydrocarbon group. In the present invention, when the number of carbons is not described, the alkyl group is preferably a C1-C 10 alkyl group, more preferably a C1-C6 alkyl group, further preferably a C1-C4 alkyl group, and particularly preferably a C1-C2 alkyl group. As examples of the alkyl group, there can be mentioned a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, a t-butyl group, a pentyl group, a hexyl group, and the like. A C1 alkyl group refers to an alkyl group having 1 carbon (a methyl group). In the present specification, the number described after "C" indicating a saturated hydrocarbon group or an unsaturated hydrocarbon group refers to the number of carbons contained in the saturated hydrocarbon group or the unsaturated hydrocarbon group. In addition, the symbol "-" between "C" and "C" indicates the range of the number described after "C". For example, "C1-C6" indicates the range of the number of carbons from 1 to 6. 10 The term "alkyl group" refers to a 1-valent saturated hydrocarbon group. In the present invention, when the number of carbons is not described, the alkyl group is preferably a C1-C

[0094] The term "alkenyl group" refers to a 1-valent unsaturated hydrocarbon group having at least one carbon-carbon double bond. In the present invention, the alkenyl group is preferably a C2-C 10 alkenyl group, more preferably a C2-C6 alkenyl group, and further preferably a C2-C4 alkenyl group. As examples of the alkenyl group, there can be mentioned a vinyl group, a 1-propenyl group, a 2-propenyl group, a 1-butenyl group, a 2-butenyl group, an isobutenyl group, a 1-pentenyl group, a 1-hexenyl group, and the like. In the aforementioned formula, the group -CR 5 =CH2, the group -CR 6 =CR 7 R8 It is also an alkenyl group.

[0095] The term "alkynyl" refers to a monovalent unsaturated hydrocarbon group having at least one carbon-carbon triple bond. In this invention, the alkynyl group is preferably C2-C. 10 The alkynyl group is more preferably C2-C6 alkynyl, and even more preferably C2-C4 alkynyl. Examples of this alkynyl group include ethynyl, 1-propynyl, 2-propynyl, butynyl, isobutynyl, pentynyl, hexynyl, etc.

[0096] The term "alkenyl carbonyl" refers to a carbonyl group that has been replaced by the alkenyl group mentioned above. Examples of alkenyl groups include acryloyl and methacryloyl.

[0097] In component (A), in formulas (1), (5), or (6), -(Y) m The portion shown corresponds to the main chain of PPE resin. Preferably, R in the unsubstituted or substituted phenol repeating unit Y. 1 and R 3 Represents a hydrogen atom, and R 2 and R 4 This represents a methyl group. In formula (1), -(Y) m - One end of the portion shown is bonded to an aromatic hydrocarbon group X via an oxygen atom, and the other end is bonded to a terminal group (Z) representing a functional group containing an unsaturated double bond via n methylene groups. In formula (5), - (Y) m - The portion shown has one end bonded to an aromatic hydrocarbon group X via an oxygen atom, and the other end bonded to a methacryloyl group via n methylene groups. In formula (6), - (Y) m - One end of the portion shown is bonded to an aromatic hydrocarbon group X via an oxygen atom, and the other end is bonded to a styryl group via n methylene groups. In formula (6), the styryl group contains -CR 6 =CR 7 R 8 The portion shown can be located at any of the ortho, meta, or para positions relative to the methylene group. In one scheme, n in equation (1), (5), or (6) is 0 or an integer from 1 to 4. In another scheme, n in equation (1), (5), or (6) is 0, 1, or 2. In yet another scheme, n in equation (1) is 0 or 1. In yet another scheme, R in equation (6) 6 ~R 8 All are hydrogen atoms.

[0098] In addition, the number m of the repeating units Y in formulas (1), (5) or (6) is preferably 1 to 80, more preferably 1 to 30, and even more preferably 1 to 5.

[0099] In component (A), p -(Y) groups are bonded to the aromatic hydrocarbon group X of formulas (1), (5) or (6) via oxygen atoms.m - the moiety shown. Preferably, p is 2 or 3. More preferably, p is 2. Further, X is preferably represented by the following formula (7) or (8),

[0100]

[0101] [In the formula, R 9 ~R 16 each independently represents a hydrogen atom, a C1-C6 alkyl group, or a phenyl group.

[0102]

[0103] [In the formula (8), R 17 ~R 24 each independently represents a hydrogen atom, a C1-C6 alkyl group, a phenyl group, or a naphthyl group, and A represents a C0-C 20 linear, branched, or cyclic divalent hydrocarbon group.], X can more preferably have a structure represented by the following formula.

[0104]

[0105] With respect to A in the formula (8), specifically, for example, a methylene group, an ethylidene group, a 1-methylethylidene group, a 1,1-propylidene group, a 1,4-phenylenebis(l-methylethylidene) group, a 1,3-phenylenebis(l-methylethylidene) group, a cyclohexylidene group, a phenylmethylene group, a naphthylmethylene group, a 1-phenylethylidene group, and the like divalent hydrocarbon groups can be exemplified.

[0106] The polyphenylene ether resin of component (A) can also be a polyphenylene ether resin having, on average, 1.5 to 5 functional groups represented by the formula (1), (5), or (6) in one molecule at the end of the main chain. From the viewpoint of being able to impart more excellent heat resistance when the resin composition is cured, the end functional group is preferably a methacryloyl group and / or an acryloyl group, and from the viewpoint of more excellent resin flowability at the time of heat molding, a methacryloyl group is more preferable.

[0107] The thermosetting resin having an unsaturated double bond at the end contained in the resin composition for an interlayer insulating film is preferably a thermosetting resin having a styryl group at the end and a phenylene ether skeleton in the main chain. Since the effects of the present application can be more easily obtained, the high frequency characteristics are excellent, the temperature dependence (change in the measured value at a high temperature (120°C) relative to the measured value at a normal temperature (about 25°C)) of the dielectric characteristics (particularly tan δ) is small, and thus a compound represented by the following formula (9) is preferable.

[0108]

[0109] In the formula (9), X is represented by the aforementioned formula (7) or (8).

[0110] In formula (9), -(Y-O)- is represented by the aforementioned formula (2).

[0111] In formula (9), -(O-Y)- is represented by the following formula (2').

[0112]

[0113] In formula (9), a, b represent an integer of 0 to 100, at least one of which is not 0.

[0114] The FO-WLP sometimes uses a spin coater of a rotary type to coat a resin composition for an interlayer insulating film on a semiconductor chip and a sealing material to form an interlayer insulating film. Therefore, it is desirable to form a coating film that enables formation of a uniform coating film on a semiconductor chip and a sealing material when a resin composition for an interlayer insulating film is coated on the semiconductor chip and the sealing material with a spin coater, and that is less likely to cause warpage in the semiconductor chip and the sealing material due to shrinkage or the like when the resin composition is cured after the coating film is formed.

[0115] For example, from the viewpoints of ease of coating of the resin composition when a spin coater is used, low dielectric constant and low dielectric loss tangent and the like of the interlayer insulating film formed from the resin composition, and compatibility of other components contained in the resin composition, the number average molecular weight of the component (A) is further preferably 500 or more and 5000 or less. The number average molecular weight of the component (A) is more preferably 750 or more and 3500 or less, further preferably 800 or more and 3000 or less, and still further preferably 1000 or more and 2500 or less. When the number average molecular weight (Mn) of the component (A) is too small, the toughness of the interlayer insulating film obtained by curing the resin composition can sometimes decrease. On the other hand, when the number average molecular weight (Mn) of the component (A) is too large, the compatibility of the component (A) with the solvent of the component (C) can sometimes decrease, and coating of the resin composition on a semiconductor chip and a sealing material with a spin coater can become difficult. The number average molecular weight (Mn) of the component (A) or the component (B) can be measured, for example, from a polystyrene conversion value measured by gel permeation chromatography (GPC). In this specification, the number average molecular weight (Mn) can be measured, for example, using a high-performance liquid chromatograph (for example, LC-20AD, manufactured by Shimadzu Corporation), using a column (for example, KF-802, manufactured by Showa Denko K.K.), and using tetrahydrofuran (THF) solution as a solvent.

[0116] The ingredient (A) can use a commercially available product. Among the commercially available products of the ingredient (A), as the modified PPE resin represented by the formula (5), for example, as the modified PPE resin having 1.5 to 5 terminal methacryloyl groups represented by the formula (3) in one molecule, for example, a product of SABIC Innovative Plastics Co., Ltd. under the trade name of "NORYL SA9000" can be used. Among the commercially available products of the ingredient (A), the modified PPE resin represented by the formula (6) can use, for example, OPE 2st 1200, OPE 2st 2200 (manufactured by Mitsubishi Gas Chemical Co., Inc.). The ingredient (A) can be prepared by a publicly known method. For example, the ingredient (A) can be prepared by a method comprising the steps of: oxidatively copolymerizing a suitable p-phenol (2,2',3,3',5,5'-hexamethylbiphenyl-4,4'-diphenol or the like) having a structure represented by the formula (1) below and a suitable monohydric phenol (2,6-dimethylphenol or the like) having a structure represented by the formula (2") below by a publicly known method, so as to prepare a polyphenylene ether resin having a terminal hydroxyl group; and modifying the obtained resin by a reaction with a suitable modifier such as chloromethylstyrene. p (In the formula, X and p have the same meanings as described above.)

[0117]

[0118] [In the formula (2"), R 1 ~R 4 have the same meanings as described above, respectively.]

[0119] The interlayer insulating film preferably contains an elastomer. Note that in one embodiment, the elastomer in this specification refers to a substance (specifically, a natural or synthetic polymer substance) that is an elastomer at room temperature (23 °C to 25 °C). Specific examples of the elastomer include thermosetting elastomers, thermoplastic elastomers, natural rubber, synthetic rubber, conjugated diene compound polymers, aromatic compound-conjugated diene copolymers, hydrogenated products of aromatic compound-conjugated diene copolymers, polystyrene-based elastomers, polyolefin-based elastomers, polyester-based elastomers, polyurethane-based elastomers, polyamide-based elastomers, elastomers having a core-shell structure, and the like. The interlayer insulating film is preferably formed of a resin composition containing a thermosetting resin having an unsaturated double bond at a terminal and an elastomer. In the resin composition for FO-WLP-type semiconductor devices, the elastomer is also referred to as component (B) or the elastomer of component (B). The interlayer insulating film or the resin composition for interlayer insulating films can obtain a rewiring layer including an interlayer insulating film having a tensile elongation of 15 % or more at 25 °C by containing the elastomer of component (B). The resin composition for FO-WLP-type semiconductor devices can obtain low dielectric properties and ease of application of the resin composition using a spin coater by the thermosetting resin of component (A), and can obtain an interlayer insulating film having a tensile elongation of 15 % or more at 25 °C by the elastomer of component (B).

[0120] The elastomer of component (B) is preferably a block copolymer containing a hard segment and a soft segment, and the ratio of the hard segment to the soft segment (hard segment:soft segment) contained in the elastomer is preferably 1 :99 to 45:55. If the ratio of the hard segment to the soft segment of the elastomer of component (B) is in the range of 1 :99 to 45:55, the interlayer insulating film obtained by curing the resin composition has a tensile elongation of 15 % or more at 25 °C, and thus is preferable. The ratio of the hard segment to the soft segment of the elastomer of component (B) is more preferably 1 :99 to 44:56, and further preferably 10:90 to 40:60. The ratio of the hard segment to the soft segment is preferably a weight ratio or a mass ratio. If the elastomer of component (B) is a commercially available product, the ratio of the hard segment to the soft segment of component (B) can be referred to the value in the product catalog.

[0121] In the elastomer of component (B), the hard segment refers to a portion having a glass transition temperature (Tg) of 0 °C or higher and lower than 130 °C, and the soft segment refers to a portion having a Tg of lower than 0 °C, and the elastomer is preferably a block copolymer of a hard segment and a soft segment. The glass transition temperature Tg can be measured by differential scanning calorimetry (DSC).

[0122] The hard segment in the block copolymer can include a methyl (meth) acrylate unit, a styrene unit, and the like. In addition, the soft segment can include a n-butyl acrylate unit, a butadiene unit, and the like. In the present specification, (meth) acrylate is a general term for acrylate and methacrylate, and the same applies to other similar expressions. (Meth) acryloyl refers to acryloyl and methacryloyl.

[0123] The elastomer of component (B) is preferably a thermoplastic elastomer, and can include the thermoplastic elastomers defined in JIS K6418, and can include a styrene-based thermoplastic elastomer (TPS), an olefin-based thermoplastic elastomer (TPO), a polyurethane-based thermoplastic elastomer (TPU), an ester-based thermoplastic elastomer (TPC), an amide-based thermoplastic elastomer (TPA), a thermoplastic rubber crosslinking body (TPV), and other thermoplastic elastomers (TPZ) having a composition or structure not included in these categories. In particular, from the viewpoint of good electrical properties when used in a high frequency region, the resin composition used in the FO-WLP type semiconductor device preferably includes a styrene-based thermoplastic elastomer. The styrene-based thermoplastic elastomer can be a styrene-based thermoplastic elastomer defined in JIS K6418, and is at least a three-block copolymer formed from styrene and a diene, and the two end blocks (hard segments) are polystyrene, and the internal block (one or more soft segments) is formed from a polydiene or a hydrogenated polydiene.

[0124] The elastomer of component (B) can also be a rubbery copolymer of carboxylated acrylonitrile and butadiene (XNBR, also referred to as "carboxylated nitrile rubber") modified with a carboxyl group at the end, as defined in JIS K6397. When the elastomer of component (B) includes XNBR, and the resin composition includes the solvent of component (C) described below, the XNBR is easily dissolved in the solvent of component (C), the thixotropy becomes better, and when coated on a semiconductor chip and a sealing material with a spin coater, for example, a coating film with less variation in thickness and a substantially uniform thickness can be formed. When the elastomer of component (B) is XNBR, the ratio of the hard segment formed from the carboxylated acrylonitrile unit to the soft segment formed from butadiene can be determined from the content of the carboxyl group contained in component (B) in the resin composition. The content of the carboxyl group of component (B) can be determined, for example, using a nuclear magnetic resonance (NMR) device.

[0125] As the elastomer of component (B), as a styrene-based thermoplastic elastomer, for example, a styrene / butadiene / styrene block copolymer (SBS) can be exemplified. The styrene / butadiene / styrene block copolymer (SBS) is a non-hydrogenated block copolymer. By including the styrene / butadiene / styrene block copolymer in component (B), the resin composition has improved softness, solubility in a solvent, and can be applied to a semiconductor chip and a sealing material with a spin coater. Also, when a styrene / butadiene / butene / styrene copolymer (SBBS) which is a partially hydrogenated elastomer is included as component (B) in the resin composition, the resin composition can also be applied to a semiconductor chip and a sealing material with a spin coater. Also, the elastomer of component (B) can be a styrene / ethylene / butene / styrene block copolymer (SEBS) obtained by completely hydrogenating a styrene / butadiene / styrene block copolymer. Also, the elastomer of component (B) can be a styrene / ethylene / ethylene / propylene / styrene block copolymer (SEEPS).

[0126] When the elastomer of component (B) is a styrene-based thermoplastic elastomer, the ratio of a hard segment formed of a styrene unit to a soft segment other than the styrene unit can be determined, for example, from the content of styrene contained in component (B) in the resin composition. The content of styrene contained in component (B) in the resin composition can be determined, for example, using nuclear magnetic resonance (NMR). Specifically, tetra-chloroethane can be used as a solvent, and the integral value of the peak in the range of 5.5 ppm to 6.5 ppm corresponding to styrene and the integral value of the peak in the other range are obtained, and the obtained values are used to calculate the ratio.

[0127] In consideration of the tensile elongation of the interlayer insulating film formed by curing the resin composition, the film thickness uniformity of the coating film when the resin composition is applied with a spin coater, and the compatibility of the solvent of component (C) described later contained in the resin composition, the number average molecular weight (Mn) of component (B) is preferably 40,000 or more and 600,000 or less, more preferably 50,000 or more and 150,000 or less, and further preferably 60,000 or more and 120,000 or less. The number average molecular weight (Mn) of component (B) can be determined, for example, from the polystyrene conversion value determined by gel permeation chromatography (GPC) using the same method as described above.

[0128] The component (B) can use a commercially available product. The commercially available product of the component (B) can be exemplified by, for example, "TR2827", "TR2000", and "TR2003" manufactured by JSR Corporation, "TUFTEC (trademark) P1083", "TUFTEC (trademark) P1500", "TUFTEC (trademark) P5051", and "TUFTEC (trademark) H1221" manufactured by Asahi / Kasei Corporation, "Nipol (trademark) 1072" manufactured by Nippon Zeon Corporation, "SEPTON (trademark) 4033" and "SEPTON (trademark) 4044" manufactured by Zeon Corporation, and "KRATON (trademark) G1652MU" manufactured by KRATON Corporation.

[0129] The resin composition preferably further contains (C) a solvent. The solvent in the resin composition for the interlayer insulating film of the semiconductor device of the FO-WLP type is also referred to as the component (C) or the solvent of the component (C). The interlayer insulating film or the resin composition for the interlayer insulating film easily dissolves or disperses the components (A) and (B) by containing the solvent of the component (C), and, for example, when the resin composition is applied on the semiconductor chip and the sealing material with a spin coater, a coating film with less thickness variation and a substantially uniform thickness can be formed. The solvent of the component (C) is less likely to remain in the coating film, and the decrease in the dielectric properties can be suppressed. The solvent of the component (C) is preferably an organic solvent. The organic solvent preferably contains at least one selected from the group consisting of an aromatic solvent and a ketone solvent. The solvent of the component (C) is preferably at least one selected from the group consisting of toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, phenyl ethyl ketone, cyclohexanone, cyclohexane, dimethyl carbonate, methyl cyclohexanone, and γ-butyrolactone. The solvent of the component (C) can be used alone or in combination with two or more. The solvent of the component (C) can use toluene and cyclohexanone, and from the viewpoint of toxicity, cyclohexanone is preferably used. The resin composition can dissolve or disperse the components (A) and (B) in the solvent of the component (C) and be used in the form of a varnish. The varnish formed from the resin composition containing the components (A), (B), and (C) preferably has the first viscosity and the second viscosity described later. In addition, the varnish formed from the resin composition containing the components (A), (B), and (C) preferably has the thixotropic index TI described later.

[0130] The component (C) can use a commercially available product. The commercially available product of the component (C) can use, for example, toluene (toluene concentration 100% by mass, manufactured by Dai-ichi Kogyo Seiyu Co., Ltd.), Anone (cyclohexanone) (cyclohexanone concentration 90 to 100% by mass, manufactured by Dai-ichi Kogyo Seiyu Co., Ltd.), methyl ethyl ketone (MEK) (2-butanone) (2-butanone concentration 90 to 100% by mass, manufactured by Dai-ichi Kogyo Seiyu Co., Ltd.), and the like.

[0131] The resin composition can further include (D) an additive. The (D) additive is also sometimes referred to as an ingredient (D) or an additive of ingredient (D). The additive of ingredient (D) includes at least one selected from the group consisting of an organic peroxide, a coupling agent, an ion capturing agent, a leveling agent, an antioxidant, a viscosity modifier, and a flame retardant. When the resin composition includes an organic peroxide as the additive of ingredient (D), the reactivity of the resin composition can be improved. When a coupling agent is included as the additive of ingredient (D), the adhesion of the semiconductor chip and the sealing material to the resin composition applied thereon can be improved. The additive of ingredient (D) preferably includes at least one selected from the group consisting of an organic peroxide and a coupling agent. The additive of ingredient (D) is more preferably an organic peroxide.

[0132] In view of the reactivity of ingredient (A) and ingredient (B), the additive of ingredient (D) is more preferably an organic peroxide that initiates a radical polymerization reaction. As the additive of ingredient (D), a commercially available product can be used for the organic peroxide. As the additive of ingredient (D), commercially available products such as "PERBUTYL (trademark) Z (t-butyl peroxybenzoate)" and "PERCUMYL (trademark) D (bis (1-methyl-1-phenylethyl) peroxide)" manufactured by Nippon Oil & Fats Corporation, and a peroxide carbonate, or the like can be used.

[0133] The coupling agent is a compound having two or more different functional groups in one molecule, one of which is a functional group that chemically bonds with an inorganic material, and the other of which is a functional group that chemically bonds with an organic material. As examples of the coupling agent, at least one selected from the group consisting of a silane coupling agent, an aluminum coupling agent, and a titanium coupling agent can be listed, and the silane coupling agent can also be used. The coupling agent can be used alone or in combination with two or more. As examples of the functional group possessed by the silane coupling agent, an alkoxy group, a vinyl group, an epoxy group, a styryl group, a methacryloyl group, an acryloyl group, an amino group, an isocyanurate group, a urea group, a mercapto group, a sulfide group, an isocyanate group, and the like can be listed. The additive can be a commercially available product, and when the additive is a silane coupling agent, for example, "KBM 503 (3-methacryloyloxypropyltrimethoxysilane)" and "KBM 1003 (vinyltrimethoxysilane)" manufactured by Shin-Etsu Silicone, and "Coatsil MP200 Silane" manufactured by MOMENTIVE PERFORMANCE MATERIALS JAPAN LLC can be used.

[0134] The resin composition can further include (E) a flowability imparting agent. The (E) flowability imparting agent is also referred to as component (E) or a flowability imparting agent of component (E). The flowability imparting agent refers to a compound having a function of imparting flowability to the resin composition. In the present specification, imparting flowability means that the viscosity of the resin composition, for example, measured under the conditions described later, can be reduced to 1000 mPa-s or less. The flowability imparting agent of component (E) can be exemplified by at least one compound selected from the group consisting of a compound having a butadiene skeleton having a 1,2-vinyl group, and a compound having an isocyanuric ring structure and two allyl groups in one molecule and being liquid at 25°C. The resin composition can obtain a resin composition excellent in flowability by containing component (A) and component (B) while containing component (E).

[0135] The number average molecular weight of the compound having a butadiene skeleton having a 1,2-vinyl group is 1000 to 10000. By being set to this number average molecular weight, the flowability and the coefficient of thermal expansion can be made good. Here, the number average molecular weight (Mn) can be set to a value obtained using a standard curve based on standard polystyrene by gel permeation chromatography (GPC) in the same manner as described above.

[0136] As the compound having a butadiene skeleton having a 1,2-vinyl group, a butadiene polymer having a 1,2-vinyl group, a block copolymer including a butadiene block having a 1,2-vinyl group and a styrene block, and a styrene-butadiene copolymer having a 1,2-vinyl group can be exemplified.

[0137] As the butadiene polymer having a 1,2-vinyl group, 1,2-polybutadiene homopolymers (trade names "B-3000", "B-1000") manufactured by Nippon Zeon Co., Ltd., and those having a trade name "BI-3015" subjected to partial hydrogenation can be exemplified.

[0138] As the styrene-butadiene block copolymer having a 1,2-vinyl group structure, styrene-butadiene block copolymers having trade names "1,2-SBS-L42" and "1,2-H-SBS-L" manufactured by Nippon Zeon Co., Ltd. can be exemplified.

[0139] As the styrene-butadiene copolymer having a 1,2-vinyl group, styrene-butadiene copolymers having trade names "Ricon181" and "Ricon100" manufactured by CRAY VALLEY Co., Ltd. can be exemplified.

[0140] By including a compound having an isocyanurine ring structure and two allyl groups in one molecule and being liquid at 25°C, the melt viscosity of the resin composition can be reduced, and the embeddability in a wiring can be improved. In addition, by having two allyl groups, extremely good low dielectric properties can be obtained. For example, when a compound having an isocyanurine ring structure and three allyl groups in one molecule is used instead of a compound having an isocyanurine ring structure and two allyl groups in one molecule and being liquid at 25°C, insufficient low dielectric properties cannot be obtained. Although the reason is unknown, it is presumed that when a compound having three allyl groups is used, a three-dimensional crosslinked structure is formed, and thus the dielectric properties are insufficient. On the other hand, it is presumed that when a compound having an isocyanurine ring structure and two allyl groups in one molecule and being liquid at 25°C is used, a linear crosslinked structure is formed, the dipole moment, which is a scale indicating molecular polarization, is small, and thus low dielectric properties can be obtained. Furthermore, although the reason is unknown, it is presumed that by having an isocyanurine ring structure, the heat resistance of the resin composition is improved. In addition, by being a compound that is liquid at 25°C, the embeddability is improved.

[0141] The molecular weight of the compound having an isocyanurine ring structure and two allyl groups in one molecule and being liquid at 25°C is preferably 300 to 400, and further preferably 320 to 400. By having a molecular weight within the above range, excellent dielectric properties and flowability are obtained.

[0142] The compound having an isocyanurine ring structure and two allyl groups in one molecule and being liquid at 25°C is preferably an isocyanuric acid (diallylated isocyanuric acid derivative) represented by the following formula (10).

[0143]

[0144] [In formula (10), R 25 represents a C4-C 14 alkyl group.]

[0145] In the aforementioned formula (10), R 25 is preferably a C8-C 14 alkyl group, and particularly preferably a C 10 -C 12 alkyl group.

[0146] As the isocyanuric acid (diallylated isocyanuric acid derivative) represented by the aforementioned formula (10), a product with the trade name "L-DAIC" manufactured by Shikoku Chemicals Corporation can be cited.

[0147] The resin composition for a semiconductor device of the FO-WLP type can contain component (A) and component (B), can contain component (C), can contain components other than component (A), component (B), and component (C), or can not contain components other than component (A), component (B), and component (C). The resin composition can also consist only of component (A), component (B), and component (C).

[0148] When the total of component (A) and component (B) is 100 mass%, the content of component (A) in the resin composition is preferably 10 to 75 mass%, more preferably 10 to 74 mass%, further preferably 10 to 73 mass%, more further preferably 15 to 72 mass%, and particularly preferably 20 to 72 mass%. When the content of component (A) is 10 to 75 mass% relative to the total amount of component (A) and component (B) in the resin composition, a cured product having a low dielectric constant and a low dielectric loss tangent can be obtained, and an interlayer insulating film having good electrical properties suitable for use in a high frequency region can be formed. In addition, when the content of component (A) is 10 to 75 mass% relative to the total amount of 100 mass% of component (A) and component (B) in the resin composition, the tensile elongation can be improved. Thus, an interlayer insulating film that can suppress peeling of two kinds of materials having different linear expansion coefficients, can suppress cracking of a wiring contained in a rewiring layer, and the like, even when the interlayer insulating film is formed in direct contact with both a semiconductor chip and a sealing material having different linear expansion coefficients, can be obtained.

[0149] When a solvent containing component (C) is included, the content of component (A) in the resin composition is preferably 3.0 to 30.0 mass%, more preferably 5.0 to 25.0 mass%, and further preferably 6.0 to 20.0 mass% relative to the total amount of 100 mass% of component (A), component (B), and component (C). When the content of component (A) is 3.0 to 30.0 mass% in the total amount of 100 mass% of component (A), component (B), and component (C) in the resin composition, the tensile elongation is good, a cured product having a low dielectric constant, a low dielectric loss tangent, and good electrical properties suitable for use in a high frequency region can be obtained. In addition, when the content of component (A) is 3.0 to 30.0 mass% in the total amount of 100 mass% of component (A), component (B), and component (C) in the resin composition, a coating film having a substantially uniform film thickness can be formed when the resin composition is applied, for example, with a spin coater.

[0150] The content of the component (B) in the resin composition is preferably 25 to 90% by mass, more preferably 26 to 90% by mass, further preferably 27 to 90% by mass, more further preferably 28 to 85% by mass, and particularly preferably 28 to 80% by mass, when the total of the component (A) and the component (B) is taken as 100% by mass. In the case where the component (E) is not contained in the resin composition, the content of the component (B) in the resin composition can be 31 to 90% by mass, can be 35 to 90% by mass, can be 40 to 90% by mass, can be 45 to 85% by mass, or can be 50 to 80% by mass, when the total of the component (A) and the component (B) is taken as 100% by mass. When the content of the component (B) is 25 to 90% by mass with respect to the total amount of the component (A) and the component (B) in the resin composition, or when the content of the component (B) is 31 to 90% by mass with respect to the total amount of the component (A) and the component (B) in the case where the component (E) is not contained in the resin composition, the tensile elongation is good by the component (B) in the resin composition, and even in the case where an interlayer insulating film directly contacting both of a semiconductor chip and a sealing material having different linear expansion coefficients is formed, peeling of the two materials having different linear expansion coefficients is suppressed, and cracking of a wiring contained in a rewiring layer or the like is suppressed. In addition, when the content of the component (B) is 25 to 90% by mass with respect to the total amount of the component (A) and the component (B) in the resin composition, or when the content of the component (B) is 31 to 90% by mass with respect to the total amount of the component (A) and the component (B) in the case where the component (E) is not contained in the resin composition, a cured product having a low dielectric constant and a low dielectric loss tangent can be obtained, and an interlayer insulating film having good electrical properties suitable for use in a high frequency region can be formed. A cured product having a tensile elongation of 15% or more at 25°C, a low dielectric constant and a low dielectric loss tangent, and good electrical properties when used in a high frequency region of 5 GHz or more, for example, 10 GHz, can be obtained by using the resin composition in which the content of the component (B) is 25 to 90% by mass with respect to the total of the component (A) and the component (B) being 100% by mass.

[0151] The content of component (B) in the resin composition is preferably 2.0 to 40.0% by mass, more preferably 3.0 to 35.0% by mass, and further preferably 3.0 to 30.0% by mass, relative to 100% by mass of the total amount of component (A), component (B), and component (C). When the content of component (B) is 2.0 to 40.0% by mass in 100% by mass of the total amount of component (A), component (B), and component (C) in the resin composition, a cured product having a good tensile elongation and low dielectric constant and low dielectric loss tangent can be obtained, and a cured product having good electrical properties suitable for use in a high frequency region can be obtained. In addition, when the content of component (B) is 2.0 to 40.0% by mass in 100% by mass of the total amount of component (A), component (B), and component (C) in the resin composition, a coating film having a substantially uniform film thickness can be formed when the resin composition is applied, for example, with a spin coater.

[0152] When the resin composition contains component (E), the content of component (B) and component (E) in the resin composition is preferably 31 to 90% by mass, more preferably 35 to 90% by mass, further preferably 40 to 90% by mass, more further preferably 45 to 85% by mass, and particularly preferably 45 to 80% by mass, when the total amount of component (A), component (B), and component (E) is taken as 100% by mass. When the total content of component (B) and component (E) is 31 to 90% by mass relative to the total amount of component (A), component (B), and component (E) in the resin composition, the tensile elongation is 15% or more by component (B) and component (E) in the resin composition, and even when an interlayer insulating film directly contacting both a semiconductor chip and a sealing material having different linear expansion coefficients is formed, peeling of the two materials having different linear expansion coefficients can be suppressed, and cracking of a wiring contained in a rewiring layer or the like can be suppressed. In addition, when the content of component (B) and component (E) is 31 to 90% by mass relative to the total amount of component (A), component (B), and component (E) in the resin composition, a cured product having a low dielectric constant and a low dielectric loss tangent can be obtained even when the content of component (B) is small due to the effect of component (E) in the resin composition, and an interlayer insulating film having good electrical properties suitable for use in a high frequency region can be formed. When the total amount of component (A), component (B), and component (E) is taken as 100% by mass, a cured product having a tensile elongation of 15% or more at 25°C and having a low dielectric constant and a low dielectric loss tangent, and good electrical properties when used in a high frequency region of 5 GHz or more, for example, 10 GHz, can be obtained using a resin composition in which the total content of component (B) and component (E) is 31 to 90% by mass.

[0153] The content of component (C) in the resin composition is preferably 30 to 95% by mass, more preferably 40 to 92% by mass, and further preferably 50 to 91% by mass, relative to 100% by mass of the total amount of component (A), component (B), and component (C). If the content of component (C) is in the range of 30 to 95% by mass, relative to 100% by mass of the total amount of component (A), component (B), and component (C), it is easy to dissolve or disperse component (A) and component (B) in component (C), and for example, when the resin composition is applied on a semiconductor substrate with a spin coater, a coating film having a small variation in thickness and a substantially uniform thickness can be formed, and a cured product in which warping of a semiconductor chip is suppressed can be obtained. Note that, although the resin composition can be used in the form of a varnish in which component (A) and component (B) are dissolved or dispersed in the solvent of component (C), the solvent is volatilized in the cured product of the resin composition, and the cured product substantially does not contain the solvent. Note that, "substantially does not contain" means that the solvent can be present in a small amount (1% by mass or less) in the cured product. Even when component (E) is contained in the resin composition, the content of component (C) can be 30 to 95% by mass, relative to 100% by mass of the total amount of component (A), component (B), and component (C).

[0154] When the resin composition contains the additive of component (D), the content of the additive of component (D) in the resin composition can be 10.0% by mass or less, 8.0% by mass or less, or 5.0% by mass or less, relative to 100% by mass of the resin composition. The content of the additive of component (D) in the resin composition can be 0.10% by mass or more. Even when component (E) is contained in the resin composition, the content of the additive of component (D) can be 10.0% by mass or less, relative to 100% by mass of the resin composition.

[0155] When the resin composition contains the flowability-imparting agent of component (E), the total content of component (B) and component (E) satisfies 31 to 90% by mass, relative to 100% by mass of the total amount of component (A), component (B), and component (E) in the resin composition. When the content of the flowability-imparting agent of component (E) in the resin composition is 10.0% by mass or less, 9.0% by mass or less, or 8.0% by mass or less, relative to 100% by mass of the resin composition. The content of the flowability-imparting agent of component (E) in the resin composition can be 0.10% by mass or more.

[0156] In the case where the resin composition for FO-WLP-type semiconductor devices contains component (A), component (B), and component (C), the first viscosity of the resin composition measured using a rotational viscometer at 25°C at 10 rpm is preferably in the range of 300 mPa-s to 4000 mPa-s. If the first viscosity of the resin composition is in the range of 300 mPa-s to 4000 mPa-s, a coating film having little variation in thickness and having a substantially uniform thickness can be formed, for example, in the case where the resin composition is applied with a spin coater in a manner to contact both the semiconductor chip and the sealing material, and warping of the semiconductor chip at the time of curing can be suppressed. The first viscosity of the resin composition is more preferably in the range of 320 mPa-s to 4000 mPa-s, and further preferably in the range of 330 mPa-s to 2000 mPa-s. In the case where the resin composition contains the flowability-imparting agent of component (E), the first viscosity of the resin composition containing the flowability-imparting agent of component (E) is preferably in the range of 300 mPa-s to 1000 mPa-s, more preferably in the range of 310 mPa-s to 900 mPa-s, further preferably in the range of 320 mPa-s to 800 mPa-s, and particularly preferably in the range of 330 mPa-s to 600 mPa-s. In the present specification, a TVE-type viscometer (cone rotor: 1° 34' x R24, manufactured by Tokimec, Inc.) can be used, for example, to measure the rotational viscometer.

[0157] In the case where the resin composition for FO-WLP-type semiconductor devices contains component (A), component (B), and component (C), the second viscosity of the resin composition measured using a rotational viscometer at 25°C at 1 rpm is preferably in the range of 200 mPa-s to 4200 mPa-s. If the second viscosity of the resin composition is in the range of 200 mPa-s to 4200 mPa-s, a coating film having little variation in thickness and having a substantially uniform thickness can be formed, for example, in the case where the resin composition is applied with a spin coater in a manner to contact both the semiconductor chip and the sealing material, and warping of the semiconductor chip at the time of curing can be suppressed. The second viscosity of the resin composition is more preferably in the range of 210 mPa-s to 4000 mPa-s, further preferably in the range of 220 mPa-s to 4000 mPa-s, and particularly preferably in the range of 230 mPa-s to 3500 mPa-s. In the case where the resin composition contains the flowability-imparting agent of component (E), the second viscosity of the resin composition containing the flowability-imparting agent of component (E) is preferably in the range of 200 mPa-s to 1100 mPa-s, more preferably in the range of 210 mPa-s to 1000 mPa-s, further preferably in the range of 220 mPa-s to 900 mPa-s, and particularly preferably in the range of 230 mPa-s to 600 mPa-s.

[0158] The resin composition containing the component (A), the component (B), and the component (C) preferably has a ratio of the second viscosity to the first viscosity, that is, a thixotropic index TI in a range of 0.5 to 3.0, and has a thixotropy close to that of a Newtonian fluid. Here, the Newtonian fluid refers to a fluid having a property that a shear stress is proportional to a shear rate. If the resin composition has a ratio of the second viscosity to the first viscosity, that is, a thixotropic index TI in a range of 0.5 to 3.0, a coating film having a small variation in thickness and a substantially uniform thickness can be formed even in a case where the resin composition is applied to a semiconductor substrate using a spin coater, for example, and warping of the semiconductor substrate at the time of curing can be suppressed. In the resin composition, the ratio of the second viscosity to the first viscosity, that is, the thixotropic index is more preferably in a range of 0.6 to 1.2, further preferably in a range of 0.70 to 1.19, more further preferably in a range of 0.80 to 1.19, particularly preferably in a range of 0.90 to 1.10, and more particularly preferably in a range of 1.00 to 1.10. In a case where the resin composition contains the flowability-imparting agent of the component (E), the resin composition containing the flowability-imparting agent of the component (E) preferably has a ratio of the second viscosity to the first viscosity, that is, a thixotropic index TI in a range of 0.5 to 3.0.

[0159] The relative dielectric constant (ε) of the coating film formed of the cured product of the resin composition constituting the interlayer insulating film of the FO-WLP type semiconductor device is preferably 4.0 or less, more preferably 3.5 or less, further preferably 3.0 or less, more further preferably 2.8 or less, and particularly preferably 2.7 or less. The lower limit of the relative dielectric constant (ε) of the coating film formed of the cured product of the resin composition constituting the interlayer insulating film is not particularly limited, and can be 1.0 or more, or 1.5 or more. In addition, the dielectric loss tangent (tan δ) of the coating film formed of the resin composition constituting the interlayer insulating film is preferably 0.010 or less, more preferably 0.005 or less, and further preferably 0.003 or less. The lower limit of the dielectric loss tangent (tan δ) of the coating film formed of the resin composition constituting the interlayer insulating film is not particularly limited, and can be 0.0001 or more, or 0.0005 or more. If the relative dielectric constant of the coating film formed of the resin composition constituting the interlayer insulating film of the FO-WLP type semiconductor device is 4.0 or less, and the dielectric loss tangent (tan δ) is 0.010 or less, the coating film has a low dielectric constant and a low dielectric loss tangent, and has good electrical properties when used in a high frequency region. A coating film that has good electrical properties when a semiconductor device is used in a high frequency region such as the 5th generation communication system "5G" in which large capacity and high speed communication are expected to be promoted, and the like, can be obtained. For example, the relative dielectric constant (ε) of a semiconductor device expected to be used in a high frequency region such as "5G" or the like, measured by the dielectric resonance method (SPDR method) at a dielectric resonance frequency of 10 GHz, can be in a range of 1.0 or more and 4.0 or less, or in a range of 1.5 or more and 3.0 or less. In addition, the dielectric loss tangent (tan δ) can be in a range of 0.0001 or more and 0.010 or less, or in a range of 0.0005 or more and 0.005 or less. In order to be able to be used in a frequency region lower than "5G", for example, the relative dielectric constant (ε) measured by the dielectric resonance method (SPDR method) at a dielectric resonance frequency of 10 GHz can be in a range of 1.0 or more and 4.0 or less, or in a range of 1.5 or more and 3.0 or less. In addition, the dielectric loss tangent (tan δ) can be in a range of 0.0001 or more and 0.010 or less, or in a range of 0.0005 or more and 0.005 or less.

[0160] Since the resin composition contains the component (A) and the component (B), the resin composition coated in contact with both the semiconductor chip and the sealing material can absorb the expansion and contraction of the semiconductor chip and the sealing material, which are different in linear expansion coefficient, due to thermal cycles caused by the progress of the semiconductor chip and the sealing material from a lower temperature of normal temperature to a higher temperature at the time of operation of the semiconductor device, and suppress the peeling of the semiconductor chip and the sealing material, the cracking of the wiring contained in the rewiring layer, and the like, using the interlayer insulating film formed of the resin composition.

[0161] The thin film sample obtained by curing the resin composition in a manner of 15 mm in width, 200 mm in length, and 100 μm in thickness has a linear expansion coefficient of 50 to 60°C (323 K to 333 K) of preferably 200 ppm / K or less, more preferably 180 ppm / K or less, in a temperature range of room temperature (25°C ± 5°C) to 230°C. It is further preferably 150 ppm / K or less, can be 10 ppm / K or more, can be 20 ppm / K or more, or can be 30 ppm / K or more. The resin composition contains the component (A) and the component (B), and can contain the component (E). If the linear expansion coefficient of the thin film-shaped cured product obtained by curing the resin composition is 200 ppm / K or less, the expansion and contraction of the semiconductor chip and the sealing material due to thermal cycles can be absorbed using the interlayer insulating film formed of the resin composition, the peeling of the semiconductor chip and the sealing material can be suppressed, the cracking of the wiring contained in the rewiring layer can be suppressed, and the like.

[0162] The resin composition can be used for the FO-WLP type semiconductor device, and can be used around the wiring of the semiconductor device. The resin composition preferably does not contain an inorganic filler such as silica. Regarding the interlayer insulating film formed by curing the resin composition, the interlayer insulating film is subjected to hole processing using laser irradiation in a subsequent process, and a via hole for wiring is formed. At this time, if the interlayer insulating film contains an inorganic filler such as silica, the silica portion is sometimes not well removed at the time of laser processing, and it is difficult to well perform copper plating on the subsequent via hole, and thus it is preferable that the resin composition does not contain an inorganic filler such as silica. Here, the fact that the resin composition does not contain an inorganic filler such as silica means that the inorganic filler is not intentionally added to the resin composition, and the inorganic filler can be contained in a range of 0.0001 mass% or more and 0.01 mass% or less, or the inorganic filler can be 0 mass%, and the inorganic filler can not be contained, with respect to 100 mass% of the resin composition.

[0163] Method for manufacturing resin composition

[0164] The resin composition can be produced by mixing component (A) and component (B), and component (C) as needed. The resin composition can also be produced by mixing component (A) and component (B), and component (C) as needed, together with an additive of component (D) as needed and / or a flowability-imparting agent of component (E). However, when a filler such as silica or alumina is added, the coatability can sometimes become poor and is not preferred. The resin composition preferably does not contain a powder of silica or alumina. The method of producing the resin composition is not particularly limited. The resin composition can be produced by mixing raw materials for forming each component using a mixer such as a mortar, a pot mill, a three-roll mill, a mixing blender, a rotary mixer, or a two-axis mixer. These components can be mixed at the same time, or a part of them can be mixed first and the remaining part can be mixed later. Alternatively, the aforementioned devices can be used in appropriate combination to produce the resin composition.

[0165] The cured product obtained by curing the resin composition can be used for a FO-WLP-type semiconductor device, and can be used around a wiring of a semiconductor device. It can be used as an interlayer insulating film of a FO-WLP-type semiconductor device, and the tensile elongation at 25°C of the cured product can be 15% or more and 500% or less. When the cured product obtained by curing the resin composition is used as an interlayer insulating film of a FO-WLP-type semiconductor device, if the tensile elongation at 25°C of the interlayer insulating film of the rewiring layer of the semiconductor device is 15% or more, peeling due to expansion and contraction caused by a difference in linear expansion coefficient between the semiconductor chip and the sealing material and repeated thermal cycles from a lower temperature at normal temperature to a higher temperature at the time of operation of the semiconductor device can be suppressed, and cracking of a wiring contained in the rewiring layer and the like can be suppressed.

[0166] The relative dielectric constant (ε) of the cured product obtained by curing the resin composition is preferably 4.0 or less, more preferably 3.5 or less, further preferably 3.0 or less, more further preferably 2.8 or less, and particularly preferably 2.7 or less. The dielectric loss tangent (tan δ) of the cured product obtained by curing the resin composition can be 0.015 or less, can be 0.014 or less, can be 0.013 or less, can be 0.012 or less, and is preferably 0.010 or less. The cured product having a low dielectric constant and a low dielectric loss tangent has good electrical properties when used in a high-frequency region, and thus can be used in electronic components, semiconductor devices, and the like that are used in a high-frequency region. In addition, the resin composition is sufficiently cured when coated on a semiconductor substrate, for example, using a spin coater, and semiconductor devices can be used in a high-frequency region such as the 5th generation communication system "5G" in which large capacity and high-speed communication are expected to be promoted.

[0167] Method for manufacturing semiconductor device

[0168] Next, a method for manufacturing a semiconductor device will be described. Hereinafter, unless otherwise specified, the semiconductor device refers to a FO-WLP type semiconductor device. The semiconductor device includes an interlayer insulating film formed by curing the aforementioned resin composition or semiconductor device resin composition.

[0169] A plurality of semiconductor chips are arranged on a support body at a prescribed interval, a molding resin as a sealing material is applied to the semiconductor chips, and the semiconductor chips are sealed with the molding resin. The semiconductor chips can be attached to the support body. After the semiconductor chips are sealed with the molding resin, the support body is peeled off, and the semiconductor chips are adjacent to and substantially exist on the same plane as the sealing material cured from the molding resin. Next, a conductive material is formed on prescribed positions of the semiconductor chips by, for example, a vacuum evaporation method or a sputtering method, and is patterned by, for example, a photolithography method, and a plurality of terminals are formed on the prescribed positions of the semiconductor chips. Wires are formed in a manner to connect the terminals formed on the semiconductor chips to external terminals, and a resin composition is applied to portions where the wires are not formed, and is thermally cured to form an interlayer insulating film. The interlayer insulating film can be stacked in multiple layers with the wires. A second support body is attached to the back surface of the semiconductor chips and the sealing material on the substantially same plane, which are peeled off from the support body. The plurality of semiconductor chips can also be sealed with the molding resin.

[0170] With respect to the interlayer insulating film, for example, the resin composition is dropped onto the semiconductor chips and the sealing material on the substantially same plane, a spin coater is used, the second support body is rotated around a vertical axis, the liquid resin composition is applied to the semiconductor chips and the sealing material on the same plane, and the liquid resin composition is cured to form the interlayer insulating film. Specifically, the resin composition is dropped onto the semiconductor chips and the sealing material including the terminals, a spin coater is used, the second support body supporting the semiconductor chips and the sealing material is rotated around a vertical axis, the liquid resin composition is applied to the semiconductor chips and the sealing material, and the liquid resin composition is cured to form the interlayer insulating film.

[0171] In order to form the interlayer insulating film, when the resin composition is applied, the rotation speed of the spin coater is preferably 1000 rpm to 3000 rpm, and the rotation time is preferably 5 seconds to 30 seconds. If the rotation speed of the spin coater and the rotation time are within the aforementioned ranges, the resin composition can be applied to the semiconductor chips and the sealing material at a substantially uniform thickness, and after curing, an interlayer insulating film having a desired substantially uniform thickness can be formed, and peeling of the semiconductor chips and the sealing material during curing can be easily suppressed. After the resin composition is applied from above the plurality of semiconductor chips and the sealing material and cured to form the interlayer insulating film, the sealing material and the interlayer insulating film can be cut for each semiconductor chip with a cutting saw or the like, and singulation can be performed.

[0172] The interlayer insulating film can be formed using a resin composition containing the aforementioned component (A), component (B), and, as necessary, component (C). The interlayer insulating film can also be formed using a resin composition containing the aforementioned component (A), component (B), and, as necessary, component (C), while containing, as necessary, an additive of component (D) and / or a flowability-imparting agent of component (E). The interlayer insulating film can also be formed by laminating a plurality of interlayer insulating films.

[0173] The 1st viscosity of the aforementioned resin composition, measured at 25°C and 10 rpm using a rotational viscometer, when coating with a spin coater on a semiconductor chip and a sealing material, is preferably in the range of 300 mPa-s to 4000 mPa-s, more preferably in the range of 400 mPa-s to 4000 mPa-s, and further preferably in the range of 500 mPa-s to 2000 mPa-s. When the 1st viscosity of the aforementioned resin composition, when coating with a spin coater on a semiconductor chip and a sealing material, is in the aforementioned range, a coating film having a small thickness deviation and a substantially uniform thickness can be formed, and peeling of the semiconductor chip and the sealing material can be suppressed.

[0174] The 2nd viscosity of the aforementioned resin composition, measured at 25°C and 1 rpm using a rotational viscometer, when coating with a spin coater on a semiconductor chip and a sealing material, is preferably in the range of 200 mPa-s to 4200 mPa-s, more preferably in the range of 210 mPa-s to 4000 mPa-s, further preferably in the range of 220 mPa-s to 4000 mPa-s, and more further preferably in the range of 230 mPa-s to 3500 mPa-s. When the 2nd viscosity of the aforementioned resin composition, when coating with a spin coater on a semiconductor chip and a sealing material, is in the aforementioned range, a coating film having a small thickness deviation and a substantially uniform thickness can be formed, and peeling of the semiconductor chip and the sealing material can be further suppressed.

[0175] The ratio of the 2nd viscosity to the 1st viscosity, that is, the thixotropic index TI, of the aforementioned resin composition, when coating with a spin coater on a semiconductor chip and a sealing material, is preferably in the range of 0.8 to 1.2, can be in the range of 0.9 to 1.1, or can be in the range of 1.0 to 1.1. When the ratio of the 2nd viscosity to the 1st viscosity of the aforementioned resin composition, when coating with a spin coater on a semiconductor chip and a sealing material, is in the aforementioned range, a coating film having a small thickness deviation and a substantially uniform thickness can be formed, and peeling of the semiconductor chip and the sealing material can be further suppressed.

[0176] When the interlayer insulating film is layered with a plurality of films like the first interlayer insulating film or the second interlayer insulating film, the thickness of one film is preferably in the range of 3 μm or more and 20 μm or less, can be in the range of 4 μm or more and 18 μm or less, or can be in the range of 5 μm or more and 17 μm or less. In the interlayer insulating film, if the thickness of one layer is in the range of 3 μm or more and 20 μm or less, even in the case of layering a plurality of films, the requirements for the miniaturization and the thinness of the semiconductor device can be satisfied.

[0177] In the method of manufacturing the semiconductor device, after the resin composition is applied, it is dried and cured, and then, for example, a laser direct patterning device (manufactured by Mitsubishi Electric Corporation) can be used to form the first interlayer insulating film (dielectric film) that opens the surface of the electrode in a pattern by laser direct patterning.

[0178] Next, a seed layer for forming a wiring is formed on the entire surface of the first interlayer insulating film formed on the semiconductor chip and the sealing material in substantially the same plane by an evaporation method, a sputtering method, a chemical vapor deposition (CVD) method, an electroless plating method, or the like. The seed layer contains copper and can contain copper oxide, an alloy of copper and chromium, copper, tantalum, cobalt, titanium, and an alloy thereof. The seed layer can be a laminated structure in which a plurality of layers are layered. For the seed layer, a resist is formed in a prescribed pattern by a photolithography method, and a wiring in a prescribed pattern is formed by electrolytic plating or electroless plating with the resist film as a mask. After the wiring is formed, the resist film is peeled off, and the seed layer remaining in the non-formed region of the wiring is removed by etching or the like. The thickness of the wiring is not particularly limited, and the thickness of the wiring can be 0.1 μm or more, can be 15 μm or less, can be 12 μm or less, or can be 10 μm or less.

[0179] Next, the resin composition is applied to the wiring in a manner in which the surface height is substantially uniform by a spin coater, and the second interlayer insulating film is formed. The second interlayer insulating film can be formed using the resin composition containing the aforementioned components (A), (B), and (C) like the first interlayer insulating film, and can be applied to the wiring by a spin coater at the same rotation speed and rotation time as the first interlayer insulating film. In addition, after the resin composition is applied, it is dried and cured, and then, for example, a laser direct patterning device (manufactured by Mitsubishi Electric Corporation) can be used to form the second interlayer insulating film that opens the surface of the wiring in a portion in which an external terminal described later is disposed by laser direct patterning. The second interlayer insulating film can also be formed so as to open the surface of the electrode by exposure and development.

[0180] The formation of the first interlayer insulating film, the formation of the wiring, and the formation of the second interlayer insulating film are sometimes collectively referred to as the formation of a redistribution layer.

[0181] Then, an external terminal such as a solder ball can be formed in the opening portion of the re-wiring layer by a solder ball mounting method, a plating method, a solder paste method, a solder paste dispensing method, a solder evaporation method, or the like, thereby forming a FO-WLP type semiconductor device. In the FO-WLP type semiconductor device thus formed, the interlayer insulating film including the first interlayer insulating film and the second interlayer insulating film is formed of the resin composition including the aforementioned components (A), (B), and (C), and thus the tensile elongation of the interlayer insulating film is large, being 15% or more, and the peeling of the semiconductor chip from the sealing material can be suppressed, and the interlayer insulating film has a low dielectric constant and a low dielectric loss tangent, and thus the electrical characteristics are good even in the case where the semiconductor device is used in a high frequency region such as a 5th generation communication system "5G" in which a large capacity and a high speed communication are expected to be promoted.

[0182] The interlayer insulating film and the resin composition of the embodiment of the present application, and the semiconductor device including the interlayer insulating film formed by curing the resin composition can be used for, for example, electronic components of electronic devices such as a mobile phone, a smartphone, a notebook computer, a tablet terminal, a camera module, and the like.

[0183] Example

[0184] Hereinafter, the present application will be specifically described by examples. The present application is not limited to these examples. In the following examples and comparative examples, if not specifically described, the numbers indicating the compounding ratio of each component contained in the resin composition indicate the ratio (mass (%)) with respect to the total amount of the resin composition being 100 mass%. In the case where the resin composition contains only the components (A), (B), and (C), and does not contain additives and the like, the total amount of the resin composition indicates the total amount of the components (A), (B), and (C).

[0185] Component (A): thermosetting resin having an unsaturated double bond at a terminal end (polyphenylene ether)

[0186] A1: OPE 2st 1200 (represented by Formula (6), modified polyphenylene ether resin having vinyl groups at both terminal ends (reaction product of 2,2',3,3',5,5'-hexamethyl-biphenyl-4,4'-diol / 2,6-dimethylphenol condensate and chloromethylstyrene), number average molecular weight (Mn) 1200) (manufactured by Mitsubishi Gas Chemical Company, Inc.).

[0187] A2: OPE 2st 2200 (represented by Formula (6), modified polyphenylene ether resin having vinyl groups at both terminal ends (reaction product of 2,2',3,3',5,5'-hexamethyl-biphenyl-4,4'-diol / 2,6-dimethylphenol condensate and chloromethylstyrene), number average molecular weight (Mn) 2200) (manufactured by Mitsubishi Gas Chemical Company, Inc.).

[0188] A3: NORYL SA9000 (represented by formula (5) having a group represented by formula (3) at both terminals, a modified polyphenylene ether resin having a methacryl group at both terminals, number average molecular weight (Mn) 1850-1950 (manufactured by SABIC Innovative Plastics (SABIC)).

[0189] Component (B): Elastomer

[0190] B1: Styrene / butadiene / styrene block copolymer (SBS) TR2827, hard segment (styrene) / soft segment (butadiene) ratio 24 / 76 (%), number average molecular weight (Mn) 130000 (manufactured by JSR Corporation).

[0191] B2: Styrene / butadiene / styrene block copolymer (SBS) TR2003, hard segment (styrene) / soft segment (butadiene) ratio 43 / 57 (%), number average molecular weight (Mn) 100000 (manufactured by JSR Corporation).

[0192] B3: Styrene / butadiene / butylene / styrene block copolymer (SBBS), TUFTEC (trademark) P1083, hard segment (styrene) / soft segment (ethylene-butadiene) ratio 20 / 80 (%), number average molecular weight (Mn) 59000 (manufactured by Asahi Kasei Corporation).

[0193] B4: Styrene / butadiene / butylene / styrene block copolymer (SBBS), TUFTEC (trademark) P1500, hard segment (styrene) / soft segment (ethylene-butadiene) ratio 30 / 70 (%), number average molecular weight (Mn) 50000 (manufactured by Asahi Kasei Corporation).

[0194] B5: Carboxyl-modified carboxylated nitrile rubber (XNBR) Nipol (trademark) 1072, hard segment (carboxyl) / soft segment (nitrile) ratio 8 / 92, number average molecular weight (Mn) 500000 (manufactured by Zeon Corporation).

[0195] B6: Styrene / ethylene / ethylene / propylene / styrene block copolymer (SEEPS) SEPTON (registered trademark) 4033, hard segment (styrene) / soft segment (ethylene-ethylene-propylene) ratio 30 / 70 (%), number average molecular weight (Mn) 100000 (manufactured by Kuraray Corporation).

[0196] B7: Styrene / ethylene / butadiene / styrene block copolymer (SEBS), TUFTEC (trademark) H1221, hard segment (styrene) / soft segment (ethylene-butadiene) ratio 12 / 88 (%), number average molecular weight (Mn) 170000 (manufactured by Asahi Kasei Corporation).

[0197] B8: styrene / ethylene / butadiene / styrene block copolymer (SEBS), KRATON (trademark) G1652, hard segment (styrene) / soft segment (ethylene-butadiene) ratio 30 / 70 (%), number average molecular weight (Mn) 200000 (manufactured by KRATON Corporation).

[0198] Ingredient (C): Solvent

[0199] C1: Toluene (manufactured by DKS Co., Ltd.), boiling point: 110.6°C.

[0200] C2: Anone (cyclohexanone, manufactured by DKS Co., Ltd.), boiling point 155.65°C.

[0201] C3: Methyl ethyl ketone (MEK) (2-butanone) (2-butanone concentration 90 to 100 mass%, manufactured by DKS Co., Ltd.), boiling point 79.64°C.

[0202] Ingredient (D): Additive (organic peroxide)

[0203] D1: PERBUTYL (registered trademark) Z (manufactured by NOF Corporation)

[0204] Ingredient (E): Flowability imparting agent

[0205] E1: Butadiene resin having 1,2-vinyl structure B-1000, 1,2-vinyl structure 85%, number average molecular weight (Mn) 1200 (manufactured by JSR Corporation).

[0206] E2: Styrene-butadiene block copolymer having 1,2-vinyl structure 1,2-SBS-L42, 1,2-vinyl structure 90%, hard segment (styrene) / soft segment (butadiene) ratio 20:80, number average molecular weight (Mn) 4300 (manufactured by JSR Corporation).

[0207] E3: Isocyanuric acid (diallylated isocyanuric acid derivative) L-DAIC (manufactured by Shikoku Chemicals Corporation).

[0208] Examples 1 to 17, Comparative Example 1

[0209] Each resin composition of the Examples and Comparative Examples was produced by mixing and dissolving the components (A), (B), and (C) and the additive (organic peroxide) of the component (D) as necessary in a constant-temperature water bath (SB-35, Tokyo Rikakikai Co., Ltd.) at 70°C with a stirrer (SSR-112, AGC TECHNO GLASS CO., LTD.). In Examples 1 to 13 and Comparative Example 1, the component (E) was not included in each resin composition. In Examples 14 to 17, the component (E) was included in each resin composition. In Tables 1, 2, and 3, the symbol "-" indicates that the relevant component was not included in the resin composition. In Tables 1, 2, and 3, the values without units in the relevant items mean "mass%". In Tables 1, 2, and 3, H / S ratio means hard segment / soft segment ratio.

[0210] Evaluation of resin composition, semiconductor device including interlayer insulating film

[0211] Each resin composition of the Examples and Comparative Examples, the interlayer insulating film obtained by curing each resin composition, and the semiconductor device including each interlayer insulating film were evaluated as follows. The results are described in Table 1, Table 2, or Table 3.

[0212] Solubility

[0213] For each resin composition, the solubility of the component (E) was evaluated by visual observation in the case where the solvent of the component (C) was 70°C and the components (A), (B), and (E) were included. In the case where the components (A), (B), and (E) were included, the resin composition in which the component (E) was visually observed to be dissolved in the solvent of the component (C) was evaluated as G (good), and the resin composition in which the component (E) was not visually observed to be dissolved was evaluated as N (not-good).

[0214] Viscosity (1st viscosity, 2nd viscosity, thixotropic index (TI))

[0215] For each resin composition, the 1st viscosity was measured at 25°C and 10 rpm, and the 2nd viscosity was measured at 25°C and 1 rpm, using a TVE-type viscometer (cone: 1° 34' x R24, manufactured by Tokimec Co., Ltd.), and the thixotropic index TI (viscosity at 1 rpm / viscosity at 10 rpm) of the 2nd viscosity with respect to the 1st viscosity was measured.

[0216] Formation of interlayer insulating film

[0217] A coating film as an interlayer insulating film was formed using each resin composition of the Examples and Comparative Examples, and heat treatment was performed under the following conditions to cure the coating film formed from the resin composition, thereby forming a cured product. The cured product was evaluated as follows.

[0218] Thickness of interlayer insulating film

[0219] Each of the resin compositions of the Examples and Comparative Examples was spin-coated on a silicon wafer of a diameter of 150 mm and a thickness of 0.525 mm used as a semiconductor substrate in a semiconductor chip, with a spin coater (MS-A200, manufactured by Mikasa Co., Ltd.). With respect to the spin coating, the spin coater was operated at 1000 rpm for 5 seconds, and then at 2000 rpm for 30 seconds, to spin-coat the resin composition on the surface of the silicon wafer, to form a coating film.

[0220] In addition, each of the resin compositions of the Examples and Comparative Examples was spin-coated on a silicon wafer of a diameter of 150 mm and a thickness of 0.525 mm used as a semiconductor substrate in a semiconductor chip, with a spin coater (MS-A200, manufactured by Mikasa Co., Ltd.). With respect to the spin coating, the spin coater was operated at 1000 rpm for 5 seconds, and then at 3000 rpm for 30 seconds, to spin-coat the resin composition on the surface of the silicon wafer, to form a coating film.

[0221] Next, the silicon wafer having the thin film of the resin composition was subjected to a preheating treatment (drying) at 130°C for 10 minutes under a nitrogen atmosphere, and was heated, to obtain a sample in which the coating film of the resin composition had been dried. Then, a heat treatment (curing) was performed at 200°C for 60 minutes under a nitrogen atmosphere, to obtain a sample in which the coating film of the resin composition had been cured. The film thickness of the coating film of the resin composition was measured with a stylus profilometer system (SURFCOM 300B, Tokyo Precision Co., Ltd.). Note that the film thickness of the interlayer insulating film can be about 5 μm to 30 μm. In addition, the film thickness of the interlayer insulating film can be 5 μm or more, or 10 μm or more. In addition, the film thickness of the interlayer insulating film can be 30 μm or less, or 20 μm or less.

[0222] Relative dielectric constant (ε), dielectric loss tangent (tan δ)

[0223] The measurement sample was produced as follows.

[0224] Each of the resin compositions of the Examples and Comparative Examples was spin-coated on a silicon wafer of a diameter of 150 mm and a thickness of 0.525 mm used as a semiconductor substrate in a semiconductor chip, with a spin coater (MS-A200, manufactured by Mikasa Co., Ltd.). With respect to the spin coating, the spin coater was operated at 1000 rpm for 5 seconds, and then at 2000 rpm for 30 seconds, to spin-coat the resin composition on the surface of the silicon wafer, to form a coating film.

[0225] In order to satisfy the high frequency response characteristics such as "5G", the relative dielectric constant (ε) and the dielectric loss tangent (tan δ) of the sample were measured at a dielectric resonance frequency of 10 GHz using a dielectric resonance method (SPDR method). The relative dielectric constant (ε) of the cured product of the resin composition is preferably 4.0 or less, more preferably 3.5 or less, and particularly preferably 3.0 or less. Note that the lower limit of the relative dielectric constant (ε) is not particularly limited, and can be, for example, 1.0 or more, or 1.5 or more. In addition, the dielectric loss tangent (tan δ) of the cured product of the resin composition is preferably 0.010 or less, more preferably 0.005 or less, and particularly preferably 0.003 or less. Note that the lower limit of the dielectric loss tangent is not particularly limited, and can be, for example, 0.0001 or more, or 0.0005 or more.

[0226] In order to be usable also in a frequency region lower than "5G", for example, the relative dielectric constant (ε) measured at a dielectric resonance frequency of 10 GHz using a dielectric resonance method (SPDR method) can be in a range of 1.0 or more and 4.0 or less, or in a range of 1.5 or more and 3.0 or less. In addition, the dielectric loss tangent (tan δ) can be in a range of 0.0001 or more and 0.01 or less, or in a range of 0.0005 or more and 0.005 or less.

[0227] Tensile elongation (%)

[0228] Each of the resin compositions of the Examples and Comparative Examples was coated on a support of polyethylene terephthalate (PET), and a preheating treatment (drying) at 130°C for 10 minutes was performed under a nitrogen atmosphere, and the resin composition was dried by heating, and a treatment (curing) at 200°C for 60 minutes was performed under a nitrogen atmosphere, to form a test piece (sample) for measuring the tensile elongation, which can be used as an interlayer insulating film. The sample was a strip-shaped film sample having a width of 15 mm, a length of 200 mm, and a thickness of 30 μm. The tensile elongation at 25°C was measured for the film sample using a table-type precision universal testing machine (AUTOGRAPH AGS-J series, manufactured by Shimadzu Corporation). The film sample was fixed to the upper and lower tensile grips of the table-type precision universal testing machine with the length between the tensile grips being 100 mm, and the film sample was stretched in the upward direction at a speed of 200 mm / minute, and the elongation was measured from the breaking distance. Specifically, the tensile elongation was calculated from the following formula (1).

[0229] Elongation (%) = [(breaking distance (mm) - initial length (100 mm)] / initial length (100 mm) x 100 (1)

[0230] Linear expansion coefficient (ppm / K)

[0231] Each of the resin compositions of Examples and Comparative Examples was coated on a support of polyethylene terephthalate (PET), and a preheating treatment (drying) was performed at 130°C for 10 minutes under a nitrogen atmosphere, and the resin composition was dried by heating to produce a resin film (sample film) of 15 mm in width, 200 mm in length, and 30 μm in thickness. The produced resin film (sample) was laminated to have a thickness of 100 μm, and curing was performed at a temperature of 200°C for 60 minutes under a pressure of 1 MPa to produce a test piece for measuring the coefficient of thermal expansion. The average coefficient of thermal expansion at 50°C to 60°C was measured by using a thermomechanical analyzer (TMA) by a tensile method, and the value was taken as the reading value (i.e., the measured value of the linear expansion coefficient). The measurement conditions were as follows: after annealing at 20°C / min to 230°C, the temperature was temporarily returned to room temperature, and then the temperature was increased to 230°C at 5°C / min. The measured linear expansion coefficient (reading value of the average coefficient of thermal expansion) was the value in the planar direction (i.e., the XY direction).

[0232] Reliability test

[0233] Reliability evaluation of a semiconductor device including an interlayer insulating film formed of a cured product of each of the resin compositions was performed.

[0234] A temporary fixing film (thermal release sheet, REVALPHA (registered trademark) 3195V, manufactured by Nitto Electric Industrial Co., Ltd.) was disposed on a silicon wafer having a thickness of 12 inches, and a plurality of semiconductor chips each having a size of 5 mm in length and 5 mm in width were disposed on the temporary fixing film with a space therebetween.

[0235] A molding resin as a sealing material was filled in the semiconductor chips. The molding resin used was a molding resin (XLM8901-18, manufactured by Namics Co., Ltd.) containing an epoxy resin and silica. The linear expansion coefficient (CTE α1) of the cured product of the molding resin at a temperature lower than the glass transition temperature was measured by the aforementioned method. The linear expansion coefficient (CTE α1) of the cured product of the molding resin at a temperature lower than the glass transition temperature was 10 ppm / °C. The molding resin around the semiconductor chips was molded by a press molding (compression molding) method at 120°C for 60 minutes. Subsequently, the molding resin was cured by a heating furnace (manufactured by TOWA Corporation) at 150°C for 60 minutes to form a semiconductor chip and a sealing material in which the periphery of the semiconductor chip was covered with the sealing material except for the side in contact with the temporary fixing film.

[0236] The molded semiconductor chip and the sealing material were disposed on a hot plate set at 200°C, and left for 10 minutes, and the temporary fixing film and the silicon wafer were peeled off.

[0237] Regarding the sealing material and the semiconductor chip after molding, one face of the semiconductor chip is adjacent to and substantially present on the same plane as the sealing material cured from the molding resin.

[0238] On the face on which the semiconductor chip and the sealing material are substantially present on the same plane, each of the resin compositions of the examples and the comparative examples was added dropwise so as to be in direct contact with both the semiconductor chip and the sealing material, and each of the resin compositions was applied using a spin coater. When applying each of the resin compositions of the examples and the comparative examples, the rotation speed of the spin coater was set to 1000 rpm to 3000 rpm, and the rotation time was set to 5 seconds to 30 seconds.

[0239] Each of the semiconductor chips and the sealing material to which each of the resin compositions of the examples and the comparative examples was applied was heated at 200°C for 60 minutes using a heating furnace (manufactured by ISUZU Seizo Co., Ltd.) to cure each of the resin compositions and form an interlayer insulating film having a thickness of 15 μm.

[0240] Each of the semiconductor chips was singulated by cutting the sealing material and the interlayer insulating film between the semiconductor chips using a dicing saw, and a sample for a FO-WLP-type semiconductor device including the interlayer insulating film cured from each of the resin compositions of the examples and the comparative examples was formed.

[0241] Regarding the sample, a thermal cycle test was performed 500 times by repeating heating and cooling at a temperature range of -55°C to +125°C for 20 minutes once using a thermal shock tester. After the thermal cycle test, when the interlayer insulating film was not peeled, the evaluation was "G (Good)", and when the interlayer insulating film of the sample was peeled, the evaluation was "F (Fail)".

[0242] Table 1

[0243]

[0244] Table 2

[0245]

[0246] Table 3

[0247]

[0248] As shown in Tables 1, 2, and 3, the cured products formed by curing the resin compositions of Examples 1-17 exhibit a tensile elongation of 15% or more at 25°C. The interlayer insulating film of the cured products formed by curing the resin compositions of Examples 1-17 did not peel off after thermal cycling tests, and was rated as "G (good)". When the cured products formed by curing the resin compositions of Examples 1-17 are used as interlayer insulating films in the redistribution layer of FO-WLP type semiconductor devices that are in direct contact with at least a portion of the semiconductor chip and at least a portion of the sealing material, they can absorb the expansion and contraction of the semiconductor chip and sealing material, which have different coefficients of linear expansion due to thermal cycling, and suppress peeling, cracking, and cracking of the wiring contained in the redistribution layer between the semiconductor chip and the sealing material.

[0249] As shown in Tables 1, 2, and 3, the cured products obtained by curing the resin compositions of Examples 1-10 and 13-17 exhibit sufficiently good electrical properties as interlayer insulating films for redistribution layers of semiconductor devices used in high-frequency regions such as 5G, measured by the dielectric resonance method (SPDR) at a dielectric resonance frequency of 10 GHz, with a relative permittivity (ε) of 1.5 or more and 3.0 or less, and a dielectric loss tangent (tanδ) of 0.001 or more and 0.010 or less. Furthermore, as shown in Table 2, the cured products obtained by curing the resin compositions of Examples 11 and 12, in which XNBR (carboxylated nitrile butadiene rubber) is used as component (B), exhibit good electrical properties as interlayer insulating films for redistribution layers of semiconductor devices that can be used in frequency regions lower than 5G.

[0250] As shown in Tables 1, 2, and 3, when the resin compositions of Examples 1-17 contain components (A), (B), and (E), component (E) exhibits good solubility in component (C), and when applied to semiconductor chips and sealing materials using a spin coater, a coating with approximately uniform thickness can be formed. Furthermore, the resin compositions of Examples 1-13, measured using a rotational viscometer at 25°C and 10 rpm, have a first viscosity ranging from 300 mPa·s to 4000 mPa·s, and a second viscosity measured at 25°C and 1 rpm, ranging from 200 mPa·s to 4200 mPa·s. Additionally, the thixotropic index (TI) of the resin compositions of Examples 1-17, i.e., the ratio of the second viscosity to the first viscosity, ranges from 0.5 to 3.0. When the resin compositions of Examples 1-17 are applied using a spin coater in direct contact with both the semiconductor chip and the sealing material, a coating with minimal thickness deviation and approximately uniform thickness can also be formed.

[0251] The linear expansion coefficient of the sample (thin film sample) obtained by curing the resin composition of Examples 14 to 17 at 50 to 60°C was 200 ppm / K or less, specifically 150 ppm / K or less, and the expansion and contraction of the semiconductor chip and the sealing material due to thermal cycles could be absorbed by the interlayer insulating film formed of the resin composition, and peeling of the semiconductor chip and the sealing material, cracking of the wiring included in the rewiring layer, and the like were suppressed. The interlayer insulating film of the sample (thin film sample) obtained by curing the resin composition of Examples 14 to 17 did not peel after the thermal cycle test, and was evaluated as "G (good)".

[0252] The 1st viscosity of the resin composition of Comparative Example 1 was less than 300 mPa-s, and the component (E) was not included, and thus the cured product obtained by curing the resin composition had a small tensile elongation at 25°C, and was less than 15%. The cured product (interlayer insulating film of the sample) obtained by curing the resin composition of Comparative Example 1 peeled after the thermal cycle test, and was evaluated as "F (Fail)". The cured product obtained by curing the resin composition of Comparative Example 1 could not sufficiently absorb the expansion and contraction of the semiconductor chip and the sealing material having different linear expansion coefficients due to thermal cycles, and could not suppress peeling, and was not suitable as the interlayer insulating film of the rewiring layer of the FO-WLP type semiconductor device.

[0253] As shown in Table 1, the resin composition of Comparative Example 1 had good solubility of the component (A) and the component (B) in the component (C), but since the 1st viscosity determined by a rotational viscometer at 25°C and 10 rpm was less than 300 mPa-s, the thickness of the coating film was deviated when coated on the semiconductor chip and the sealing material with a spin coater.

[0254] Industrial Applicability

[0255] The resin composition and the semiconductor device of the embodiment of the present application, or the interlayer insulating film obtained by curing the resin composition, or the semiconductor device including the interlayer insulating film can be used for wafer level packaging (WLP), particularly, a FO-WLP type semiconductor device. The semiconductor device of the embodiment of the present application can be used for electronic components of electronic devices such as a mobile phone, a smartphone, a notebook computer, a tablet terminal, a camera module, and the like.

[0256] Explanation of Reference Numerals

[0257] 1: Semiconductor device, 2: Semiconductor chip, 2a: Terminal, 3: Sealing material (molding resin), 4: Wiring, 5: Interlayer insulating film, 6: Rewiring layer, 7: External terminal.

Claims

1. A semiconductor device, characterized by comprising: It has: a semiconductor chip; a sealing material covering the semiconductor chip; and a rewiring layer including a wiring electrically connecting the semiconductor chip and an external terminal, and an interlayer insulating film covering a periphery of the wiring, the area of the rewiring layer in plan view is larger than the semiconductor chip, the interlayer insulating film has a tensile elongation of 15% or more at 25°C. The interlayer insulating film is in direct contact with at least a portion of the semiconductor chip and at least a portion of the sealing material.

2. The semiconductor device according to claim 1, wherein At least a portion of the semiconductor chip and at least a portion of the sealing material are adjacent and present on the same plane, and the interlayer insulating film is in direct contact with at least a portion of the semiconductor chip and at least a portion of the sealing material present on the same plane.

3. The semiconductor device according to claim 1 or 2, wherein The interlayer insulating film has a dielectric loss tangent (tan δ) of 0.010 or less measured at a dielectric resonance frequency of 10 GHz.

4. The semiconductor device according to any one of Claims 1 to 3, wherein The interlayer insulating film is formed from a resin composition including a thermosetting resin having an unsaturated double bond at a terminal.

5. The semiconductor device according to any one of Claims 1 to 4, wherein The interlayer insulating film is formed from a resin composition including a polyphenylene ether having an unsaturated double bond at a terminal and an elastomer.

6. The semiconductor device according to any one of Claims 1 to 5, wherein The interlayer insulating film is formed from a resin composition including a polyphenylene ether having an unsaturated double bond at a terminal and an elastomer, the ratio of hard segments to soft segments contained in the elastomer being 1:99 to 45:

55.

7. The semiconductor device according to any one of Claims 1 to 6, wherein The elastomer is a styrene-based thermoplastic elastomer.

8. The semiconductor device according to claim 6 or 7, wherein The sealing material includes an epoxy resin.

9. The semiconductor device according to any one of Claims 1 to 8, wherein It is a resin composition including (A) a thermosetting resin having an unsaturated double bond at a terminal and (B) an elastomer, 10. A resin composition for a wafer level packaged semiconductor device, characterized by comprising: the cured product of the resin composition has a tensile elongation of 15% or more at 25°C.

11. The resin composition according to claim 10, further including (C) a solvent.

12. The resin composition according to claim 11, having a 1st viscosity in the range of 300 mPa-s to 4000 mPa-s as measured with a rotational viscometer at 25°C and 10 rpm.

13. The resin composition according to claim 12, having a 2nd viscosity in the range of 200 mPa-s to 4200 mPa-s as measured with a rotational viscometer at 25°C and 1 rpm, and a thixotropic index TI of 0.5 to 3.0, which is the ratio of the 2nd viscosity to the 1st viscosity. The content of component (B) in the resin composition is 25 to 90 mass% relative to the total of 100 mass% of components (A) and (B).

14. The resin composition according to any one of claims 10 to 13, wherein 15. A semiconductor device including an interlayer insulating film formed by curing the resin composition according to any one of claims 10 to 14 around a wiring electrically connecting a semiconductor chip and an external terminal. ​

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