Atomic layer deposition method
By irradiating the reaction chamber with laser during atomic layer deposition and detecting and repairing defective areas, the problem of slow bonding speed was solved, thereby improving thin film deposition efficiency and reducing energy consumption.
Patent Information
- Application Number
- CN202510884644.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-30
- Publication Date
- 2025-11-11
AI Technical Summary
The slow bonding speed of atomic layer deposition technology has become a key bottleneck restricting its large-scale industrial application.
During atomic layer deposition, lasers are irradiated into the reaction chamber to increase the bonding speed between the first and second atomic deposition layers. Defect areas are detected and targeted with laser irradiation, combined with a purging step to remove reaction byproducts.
The high-energy characteristics of lasers excite atoms to a high-energy state, reducing the activation energy of bonding reactions, accelerating the reaction rate, improving thin film deposition efficiency, shortening the production cycle, and saving energy.
Smart Images
Figure CN120924940A_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of laser processing technology, and more specifically, relates to an atomic layer deposition method. Background Technology
[0002] Atomic layer deposition (ALD) is an advanced thin film deposition technique that achieves atomic-level thin film deposition by alternately introducing gaseous precursors in a reaction chamber, causing a chemical reaction on the substrate surface. This technique offers numerous advantages, such as excellent film uniformity, superior conformability, the ability to deposit on substrates with complex shapes, and precise thickness control. It is widely used in microelectronics, optoelectronics, energy storage, biomedicine, and many other fields.
[0003] Despite its excellent performance in thin film quality, the slow bonding speed of atomic layer deposition technology has become a key bottleneck restricting its large-scale industrial application in practical applications. Summary of the Invention
[0004] This application provides an atomic layer deposition method that improves the bonding speed of atomic layers.
[0005] The technical solution adopted in this application embodiment is: to provide an atomic layer deposition method, including the following steps:
[0006] The substrate is positioned at a predetermined location within the reaction chamber;
[0007] A precursor gas is introduced into the reaction chamber to form a first atomic deposition layer above the substrate;
[0008] A first reaction gas is introduced into the reaction chamber to form a second atomic deposition layer above the first atomic deposition layer;
[0009] A laser is irradiated into the reaction chamber to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer.
[0010] Optionally, irradiating the reaction chamber with laser light to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer includes the following steps:
[0011] Detect the first defect region where the first atomic deposition layer and the second atomic deposition layer are bonded;
[0012] The first defect region is irradiated with a laser to assist in the bonding of the first atomic deposition layer and the second atomic deposition layer.
[0013] Optionally, the laser irradiation of the first defect region includes the following steps:
[0014] Depending on the size of the first defect area, point laser, line laser, or area laser may be used for irradiation.
[0015] Optionally, the step of irradiating the reaction chamber with laser to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer further includes the following steps:
[0016] The first defect region where the first atomic deposition layer and the second atomic deposition layer are bonded is inspected again.
[0017] The first defect area is irradiated with laser again until the first atomic deposition layer and the second atomic deposition layer are bonded together without defects.
[0018] Optionally, the reaction chamber may be purged before or after the step of irradiating the reaction chamber with laser to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer.
[0019] Optionally, the step of introducing a precursor gas into the reaction chamber to form a first atomic deposition layer over the substrate includes the following steps:
[0020] The reaction chamber was evacuated.
[0021] Heat the substrate to a preset reaction temperature;
[0022] The precursor gas is introduced into the reaction chamber, and the precursor gas reacts with the substrate to form a first atomic deposition layer on the substrate.
[0023] Detect the second defect region of the first atomic deposition layer;
[0024] The second defective region is irradiated with laser.
[0025] Optionally, the step of introducing a precursor gas into the reaction chamber to form a first atomic deposition layer over the substrate further includes the following step:
[0026] The reaction chamber is purged before or after the step of laser irradiating the second defect region.
[0027] Optionally, the atomic layer deposition method further includes the following steps:
[0028] A second reaction gas is introduced into the reaction chamber to form a third atomic deposition layer above the second atomic deposition layer.
[0029] Optionally, the step of introducing a second reactive gas into the reaction chamber to form a third atomic deposition layer above the second atomic deposition layer includes the following steps:
[0030] The second reaction gas is introduced into the reaction chamber and reacts with the second atomic deposition layer to form a third atomic deposition layer above the second atomic deposition layer;
[0031] Detect the third defect region of the third atomic deposition layer;
[0032] The third defect region is irradiated with laser.
[0033] Optionally, the step of introducing a second reactive gas into the reaction chamber to form a third atomic deposition layer above the second atomic deposition layer further includes the following step:
[0034] The reaction chamber is purged before or after the step of laser irradiating the third defect region.
[0035] The beneficial effects of the atomic layer deposition method provided in this application are as follows: By irradiating the reaction chamber with laser during the atomic layer deposition process, the bonding speed between the first and second atomic layer deposition layers is effectively improved. The high-energy characteristics of the laser can excite atoms to a high-energy state, thereby reducing the activation energy of the bonding reaction and accelerating the reaction rate. Simultaneously, it can lower the reaction temperature within the reaction chamber, saving energy. Compared to traditional atomic layer deposition methods, this method improves the efficiency of thin film deposition, shortens the production cycle, and enhances production efficiency and economic benefits. Attached Figure Description
[0036] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0037] Figure 1 A schematic flowchart of one embodiment of the atomic layer deposition method provided in this application;
[0038] Figure 2 A schematic flowchart of one embodiment of the method for forming a first atomic deposition layer provided in this application;
[0039] Figure 3 A schematic flowchart of one embodiment of the method for forming a second atomic deposition layer provided in this application;
[0040] Figure 4 This is a schematic flowchart of one embodiment of the method for forming a third atomic deposition layer provided in this application. Detailed Implementation
[0041] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.
[0042] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.
[0043] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.
[0044] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.
[0045] Please see Figure 1 The atomic layer deposition method provided in the embodiments of this application will now be described. The technical solution adopted in the embodiments of this application is: to provide an atomic layer deposition method, including the following steps:
[0046] S1. Place the substrate at the preset position in the reaction chamber;
[0047] The reaction chamber in this embodiment can be a standard atomic layer deposition reaction chamber, equipped with a temperature control unit, a gas inlet, and an exhaust outlet, enabling precise control of the temperature and gas pressure within the reaction chamber. The reaction chamber requires good airtightness.
[0048] The reaction chamber is equipped with a base for holding the substrate. The base is a preset position for placing the substrate and is located in the center of the reaction chamber.
[0049] The substrate can be a silicon wafer, a quartz wafer, or other suitable material. The surface is cleaned and pretreated to remove surface impurities and oxide layers to ensure good deposition results.
[0050] After selecting the substrate material, place the substrate in an ultrasonic cleaner and use deionized water and ethanol to perform ultrasonic cleaning in sequence, with each step lasting 2-3 minutes, to remove dust, oil and other impurities from the substrate surface.
[0051] Then, the substrate is pretreated by placing it in a plasma cleaning device for 2-3 minutes to activate the substrate surface, increase surface active sites, and improve the adsorption capacity of precursor gases.
[0052] S2. Introduce a precursor gas into the reaction chamber to form a first atomic deposition layer above the substrate;
[0053] The precursor gas can be tetra(ethylmethylamino)hafnium, trimethylgallium, dimethylindium, tetra(dimethylaminotin), or dimethylindium, etc. During the reaction, the reaction chamber temperature needs to be adjusted to 0–300℃, preferably 80℃–300℃. The precursor gas introduction time can be 0.01–30 seconds, and can be adjusted according to the size of the reaction chamber.
[0054] S3. Introduce the first reaction gas into the reaction chamber to form a second atomic deposition layer above the first atomic deposition layer;
[0055] The first reaction gas can be oxygen, ozone, water vapor, carbon tetrafluoride, nitrogen trifluoride, or nitrous oxide (laughing gas). The introduction time of the first reaction gas can be 0.01-30 seconds, which can be adjusted according to the size of the reaction chamber.
[0056] S4. Irradiate the reaction chamber with laser light to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer.
[0057] The laser used in this embodiment can be 980nm near-infrared light, 1060-1070nm infrared laser, or 308nm, 343nm, or 355nm ultraviolet light, with a power range of 0-250W. The laser irradiation time can be 0.1-60s.
[0058] This embodiment of the application effectively improves the bonding speed between the first and second atomic deposition layers by irradiating the reaction chamber with laser light during atomic layer deposition. The high-energy characteristics of the laser can excite atoms to a high-energy state, thereby lowering the activation energy of the bonding reaction, accelerating the reaction rate, and simultaneously reducing the reaction temperature within the reaction chamber, saving energy. Compared to traditional atomic layer deposition methods, this improves the efficiency of thin film deposition, shortens the production cycle, and enhances production efficiency and economic benefits.
[0059] Please see Figure 3 S4. Irradiating the reaction chamber with laser light to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer, including the following steps:
[0060] S41. Detect the first defect region where the first atomic deposition layer and the second atomic deposition layer are bonded;
[0061] The reaction chamber is equipped with a high-resolution optical microscope or scanning electron microscope (SEM) to detect defect areas where the first and second atomic deposition layers bond. The optical microscope or scanning electron microscope (SEM) can monitor the surface morphology and structure of the deposition layers in real time and accurately identify the location of defects.
[0062] S42. The first defect region is irradiated with laser to assist the bonding of the first atomic deposition layer and the second atomic deposition layer.
[0063] The laser can be positioned directly above the base inside the reaction cavity, with the first or second atomic deposition layer perpendicular to the laser irradiation direction, to ensure the effective utilization of laser energy.
[0064] S42. Irradiate the first defect area with laser, including the following steps:
[0065] Depending on the size of the first defect area, point laser, line laser, or area laser may be used for irradiation.
[0066] Based on the defect area information provided by the defect detection device, adjust the laser parameters, such as wavelength, power, and pulse width.
[0067] Select the appropriate laser irradiation mode based on the size of the defect area:
[0068] If the area of the first defect region is smaller than a preset first area threshold, point laser irradiation is used. The laser is focused onto the center of the first defect region using a focusing lens for precise irradiation, lasting from 0.1 to 60 seconds.
[0069] If the area of the first defect region is between the first area threshold and the first area threshold, line laser irradiation is used. The laser beam is shaped into a line by a beam shaper to cover the entire first defect region and provide uniform irradiation for 0.1 to 60 seconds.
[0070] If the area of the first defect region is larger than the first area threshold, surface laser irradiation is used. The laser beam is shaped into a surface by a beam shaper to cover the entire first defect region and provide uniform irradiation for 0.1 to 60 seconds.
[0071] The first area threshold and the first area threshold can be adjusted according to process requirements.
[0072] S4. Irradiating the reaction chamber with laser light to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer, further includes the following steps:
[0073] S43. Re-inspect the first defect region where the first atomic deposition layer and the second atomic deposition layer are bonded;
[0074] S44. The first defect area is irradiated with laser again until the first atomic deposition layer and the second atomic deposition layer are bonded together without defects.
[0075] The area repaired by the initial laser irradiation is then re-inspected to check for any residual defects. Based on the information about the defective areas detected again, the laser parameters, such as wavelength, power, or pulse width, are adjusted.
[0076] Repeat the laser irradiation steps described above to irradiate the remaining defective areas until the defects are completely repaired and the bonding between the first atomic deposition layer and the second atomic deposition layer is defect-free.
[0077] After each laser irradiation, defect detection must be performed to ensure that defects are gradually reduced until they are completely eliminated.
[0078] S5. Before or after the step of irradiating the reaction chamber with laser to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer, the reaction chamber is purged.
[0079] The reaction chamber is equipped with a purging system for purging the chamber before or after the laser irradiation step. The purging system includes gas pipes, a flow controller, and valves, which can precisely control the flow rate and purging time of the purging gas.
[0080] High-purity nitrogen or helium, or other inert gases, are used as purge gases, stored in high-pressure cylinders, and their flow rate is precisely controlled by a flow controller. This application's embodiment uses high-purity nitrogen cylinders.
[0081] When purging the reaction chamber, open the high-purity nitrogen cylinder and adjust the nitrogen flow rate to the preset flow rate using the flow controller. Introduce high-purity nitrogen into the reaction chamber for 1-60 seconds to remove excess first reaction gas or reaction byproducts.
[0082] Please see Figure 2 S2. Introducing a precursor gas into the reaction chamber to form a first atomic deposition layer above the substrate includes the following steps:
[0083] S21. Vacuum treatment of the reaction chamber;
[0084] The reaction chamber is connected to an external vacuum pump. When evacuating, all air inlets and outlets of the reaction chamber must be closed, and the external vacuum pump must be activated to evacuate the reaction chamber until the vacuum level inside the reaction chamber reaches 0.01 to 0.05 Torr.
[0085] S22. Heat the substrate to the preset reaction temperature;
[0086] A temperature control unit is connected to the base inside the reaction chamber. The temperature control unit of the reaction chamber is turned on to heat the substrate to a preset reaction temperature of 0–300°C, preferably 80°C–300°C, and maintain this temperature constant.
[0087] Wait for the substrate temperature to stabilize, which usually takes 1-3 minutes, to ensure that the substrate surface temperature is uniform.
[0088] S23. A precursor gas is introduced into the reaction chamber, and the precursor gas reacts with the substrate to form a first atomic deposition layer on the substrate.
[0089] The precursor gas reacts chemically with the substrate surface, and the precursor gas is continuously introduced for 0.01-30s to form the first atomic deposition layer.
[0090] S24. Detect the second defect region of the first atomic deposition layer;
[0091] After the first atomic deposition layer is formed, the surface of the deposition layer is scanned using a high-resolution optical microscope or scanning electron microscope (SEM) to detect the presence of a second defect region.
[0092] S25. Irradiate the second defect area with laser.
[0093] Based on the information about the second defect area provided by the defect detection device, the parameters of the laser are adjusted and a suitable laser irradiation mode is selected according to the size of the second defect area.
[0094] If the area of the second defect region is smaller than a preset first area threshold, point laser irradiation is used. The laser is focused onto the center of the second defect region using a focusing lens for precise irradiation, lasting from 0.1 to 60 seconds.
[0095] If the area of the second defect region is between the first area threshold and the second area threshold, line laser irradiation is used. The laser beam is shaped into a line by a beam shaper to cover the entire second defect region and provide uniform irradiation for 0.1 to 60 seconds.
[0096] If the area of the second defect region is larger than the first area threshold, surface laser irradiation is used. The laser beam is shaped into a surface by a beam shaper to cover the entire second defect region and provide uniform irradiation for 0.1–60 seconds.
[0097] S2. Introducing a precursor gas into the reaction chamber to form a first atomic deposition layer above the substrate, further comprising the following steps:
[0098] S26. Before or after the step of laser irradiating the second defect region, the reaction chamber is purged.
[0099] When purging the reaction chamber, open the high-purity nitrogen cylinder and adjust the nitrogen flow rate to the preset flow rate using the flow controller. Introduce high-purity nitrogen into the reaction chamber for 1-60 seconds to remove excess precursor gases or reaction byproducts.
[0100] The atomic layer deposition method also includes the following steps:
[0101] Please see Figure 1 , Figure 4 S6. Introduce a second reaction gas into the reaction chamber to form a third atomic deposition layer above the second atomic deposition layer.
[0102] The second reactant gas is a different gas from the precursor gas and the first reactant gas, which can improve the performance of the thin film. Specifically, gases such as oxygen, ozone, water vapor, carbon tetrafluoride, nitrogen trifluoride, or nitrous oxide can be used. The introduction time of the second reactant gas can be 0.01-30 seconds, which can be adjusted according to the size of the reaction chamber.
[0103] S6. Introduce a second reaction gas into the reaction chamber to form a third atomic deposition layer above the second atomic deposition layer, including the following steps:
[0104] S61. A second reaction gas is introduced into the reaction chamber. The second reaction gas reacts with the second atomic deposition layer to form a third atomic deposition layer above the second atomic deposition layer.
[0105] S62. Detect the third defect region of the third atomic deposition layer;
[0106] After the third atomic deposition layer is formed, the surface of the deposition layer is scanned using a high-resolution optical microscope or scanning electron microscope (SEM) to detect the presence of a third defect region.
[0107] S63. Irradiate the third defect area with laser.
[0108] Based on the information about the third defect area provided by the defect detection device, the parameters of the laser are adjusted and a suitable laser irradiation mode is selected according to the size of the third defect area.
[0109] If the area of the third defect region is smaller than a preset first area threshold, point laser irradiation is used. The laser is focused onto the center of the third defect region using a focusing lens for precise irradiation, lasting from 0.1 to 60 seconds.
[0110] If the area of the third defect region is between the first area threshold and the first area threshold, line laser irradiation is used. The laser beam is shaped into a line by a beam shaper to cover the entire third defect region and provide uniform irradiation for 0.1 to 60 seconds.
[0111] If the area of the third defect region is larger than the first area threshold, surface laser irradiation is used. The laser beam is shaped into a surface by a beam shaper to cover the entire third defect region and provide uniform irradiation for 0.1–60 seconds.
[0112] S6. Introducing a second reaction gas into the reaction chamber to form a third atomic deposition layer above the second atomic deposition layer, further comprising the following steps:
[0113] S64. Before or after the step of laser irradiating the third defect region, the reaction chamber is purged.
[0114] When purging the reaction chamber, open the high-purity nitrogen cylinder and adjust the nitrogen flow rate to the preset flow rate using the flow controller. Introduce high-purity nitrogen into the reaction chamber for 1-60 seconds to expel excess secondary reaction gases or reaction byproducts.
[0115] Dopant sources can be added to the precursor gas, the first reactant gas, and the second reactant gas. The atomic percentage of the dopant source is 0.5%–10%, and the dopant source can be hydrogen or fluorine. Alternatively, the dopant source can act as a reactant on its own. This can improve the mobility of the formed thin film, enhance electrical stability, and improve device performance.
[0116] Repeat steps S2-S6 multiple times until a thin film of a certain thickness is obtained on the substrate surface.
[0117] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. An atomic layer deposition method, characterized in that, Includes the following steps: The substrate is positioned at a predetermined location within the reaction chamber; A precursor gas is introduced into the reaction chamber to form a first atomic deposition layer above the substrate; A first reaction gas is introduced into the reaction chamber to form a second atomic deposition layer above the first atomic deposition layer; A laser is irradiated into the reaction chamber to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer.
2. The atomic layer deposition method according to claim 1, characterized in that, The step of irradiating the reaction cavity with laser light to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer includes the following steps: Detect the first defect region where the first atomic deposition layer and the second atomic deposition layer are bonded; The first defect region is irradiated with a laser to assist in the bonding of the first atomic deposition layer and the second atomic deposition layer.
3. The atomic layer deposition method according to claim 2, characterized in that, The laser irradiation of the first defective region includes the following steps: Depending on the size of the first defect area, point laser, line laser, or area laser may be used for irradiation.
4. The atomic layer deposition method according to claim 2, characterized in that, The step of irradiating the reaction cavity with laser to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer further includes the following steps: The first defect region where the first atomic deposition layer and the second atomic deposition layer are bonded is inspected again. The first defect area is irradiated with laser again until the first atomic deposition layer and the second atomic deposition layer are bonded together without defects.
5. The atomic layer deposition method according to claim 1, characterized in that, Before or after the step of irradiating the reaction chamber with laser to increase the bonding speed between the first atomic deposition layer and the second atomic deposition layer, the reaction chamber is purged.
6. The atomic layer deposition method according to claim 1, characterized in that, The step of introducing a precursor gas into the reaction chamber to form a first atomic deposition layer over the substrate includes the following steps: The reaction chamber was evacuated. Heat the substrate to a preset reaction temperature; The precursor gas is introduced into the reaction chamber, and the precursor gas reacts with the substrate to form a first atomic deposition layer on the substrate. Detect the second defect region of the first atomic deposition layer; The second defective region is irradiated with laser.
7. The atomic layer deposition method according to claim 6, characterized in that, The step of introducing a precursor gas into the reaction chamber to form a first atomic deposition layer over the substrate further includes the following steps: The reaction chamber is purged before or after the step of laser irradiating the second defect region.
8. The atomic layer deposition method according to claim 1, characterized in that, It also includes the following steps: A second reaction gas is introduced into the reaction chamber to form a third atomic deposition layer above the second atomic deposition layer.
9. The atomic layer deposition method according to claim 8, characterized in that, The step of introducing a second reactive gas into the reaction chamber to form a third atomic deposition layer above the second atomic deposition layer includes the following steps: The second reaction gas is introduced into the reaction chamber and reacts with the second atomic deposition layer to form a third atomic deposition layer above the second atomic deposition layer; Detect the third defect region of the third atomic deposition layer; The third defect region is irradiated with laser.
10. The atomic layer deposition method according to claim 9, characterized in that, The step of introducing a second reactive gas into the reaction chamber to form a third atomic deposition layer above the second atomic deposition layer further includes the following steps: The reaction chamber is purged before or after the step of laser irradiating the third defect region.