Device and method for detecting high-temperature electric leakage of semiconductor device

Abstract

The invention discloses a semiconductor device high-temperature electric leakage detection device and method, relates to the technical field of semiconductor device detection, and can realize electric leakage detection of a semiconductor power device in a high-temperature environment so as to improve the stability of the power device. The device comprises a voltage-stabilized power supply and a test circuit, the voltage-stabilized power supply is used for supplying power to the test circuit, and the test circuit is arranged in a high-temperature oven; the test circuit comprises a carrier board and a circuit protection unit. The carrier plate is connected with a plurality of power devices, one power device corresponds to one circuit protection unit, and the power devices are connected with the corresponding circuit protection units in parallel; the circuit protection unit is connected with a grid electrode of the power device, a source electrode of the power device is short-circuited, a drain electrode of the power device is short-circuited, voltage is loaded to the power device through the detection circuit, and electric leakage is detected; the circuit protection unit is used for fusing when the leakage current of the power device is greater than a first threshold value so as to detect the electric leakage condition of the power device according to whether the circuit protection unit is open.

Description

Technical Field

[0001] This application relates to the field of semiconductor device testing technology, and in particular to a semiconductor device high-temperature leakage current detection device and method. Background Technology

[0002] Power devices are often used in high-temperature environments (such as engine compartment temperatures exceeding 125°C) in applications such as new energy vehicles, industrial motors, and photovoltaic inverters. High-temperature leakage current detection can simulate actual operating conditions and verify the stability of devices under extreme temperatures.

[0003] Currently, semiconductor power devices cannot be completely screened out through a single electrical measurement. This can lead to device failure, system collapse, and huge losses under extreme operating conditions. Therefore, there is an urgent need for a leakage current detection device for semiconductor power devices in high-temperature environments. Summary of the Invention

[0004] This application provides a high-temperature leakage current detection device and method for semiconductor devices, which can realize leakage current detection of semiconductor power devices under high-temperature environment, thereby improving the stability of power devices.

[0005] To achieve the above objectives, this application adopts the following technical solution: In a first aspect of this application, a high-temperature leakage current detection device for semiconductor devices is provided. The device includes: a regulated power supply and a test circuit, wherein the regulated power supply is used to power the test circuit, and the test circuit is placed in a high-temperature oven. The test circuit includes a carrier board and a circuit protection unit; Multiple power devices are connected to the carrier board, and each power device corresponds to a circuit protection unit. The power device and the corresponding circuit protection unit are connected in parallel. The circuit protection unit is connected to the gate of the power device, the source of the power device is short-circuited, and the drain of the power device is short-circuited. The test circuit applies voltage to the drain and source of the power device. The circuit protection unit is used to blow the fuse when the leakage current of the power device is greater than a first threshold, so as to detect the leakage current of the power device based on whether the circuit protection unit is open.

[0006] As one possible implementation, the power device further includes a current detection unit connected in series between the regulated power supply and the test circuit; The current detection unit is used to collect the current of the test circuit in real time.

[0007] As one possible implementation, the device further includes a processor, the processor being used to: The current sent by the current detection unit is received in real time. If the current is greater than the second threshold, a control command is generated. The control command is used to instruct the regulated power supply to disconnect from the test circuit.

[0008] As one possible implementation, the carrier board includes multiple pins, with the source, gate, and drain of the power device connected to the corresponding pins.

[0009] As one possible implementation, the test circuit further includes a protection resistor, the first end of which is connected to the source of the power device, and the second end of which is connected to the negative terminal of the regulated power supply.

[0010] In one possible implementation, the first terminal of the circuit protection unit is connected to the positive terminal of the regulated power supply, and the second terminal of the circuit protection unit is connected to the gate of the power device.

[0011] As one possible implementation, the circuit protection unit includes: a fuse; The fuse is used to melt when the leakage current of the power device exceeds a first threshold, thereby achieving circuit isolation.

[0012] As one possible implementation, the current detection unit includes: an ammeter or a multimeter.

[0013] A second aspect of this application provides a method for detecting high-temperature leakage current in a semiconductor device. This method is applied to a high-temperature leakage current detection apparatus for a semiconductor device. The apparatus includes: a regulated power supply and a test circuit. The regulated power supply powers the test circuit, which is placed in a high-temperature oven. The test circuit includes a carrier board and a circuit protection unit. Multiple power devices are connected to the carrier board, with each power device corresponding to one circuit protection unit. The power devices and their corresponding circuit protection units are connected in parallel. The circuit protection unit is connected to the gate of the power device. The source and drain of the power devices are short-circuited. A voltage is applied to the drain and source of the power devices through the test circuit. The method includes: The circuit protection unit blows the fuse when the leakage current of the power device exceeds a first threshold. The leakage current of the power device is detected based on whether the circuit protection unit is open.

[0014] As one possible implementation, the step of detecting leakage current of the power device based on whether the circuit protection unit is open-circuited includes: If the circuit protection unit is open, it indicates that the leakage current of the power device corresponding to the circuit protection unit is greater than the preset current. If the circuit protection unit is open, it indicates that the leakage current of the power device corresponding to the circuit protection unit is less than the preset current.

[0015] The beneficial effects of the technical solutions provided in this application include at least the following: This application provides a high-temperature leakage current detection device for semiconductor devices. The device includes a regulated power supply and a test circuit. The regulated power supply powers the test circuit, which is placed in a high-temperature oven. The test circuit includes a carrier board and a circuit protection unit. Multiple power devices are connected to the carrier board, with each power device corresponding to a circuit protection unit, and the power devices and their corresponding circuit protection units are connected in parallel. The circuit protection unit is connected to the gate of the power device, the source of the power device is short-circuited, and the drain of the power device is short-circuited. A voltage is applied to the drain and source of the power device through the test circuit. The circuit protection unit is used to fuse when the leakage current of the power device exceeds a first threshold. This allows for the detection of leakage current in the power device based on whether the circuit protection unit is open-circuited. If the circuit protection unit is open-circuited, it indicates that the power device is leaking current at high temperatures. This enables leakage current detection of semiconductor power devices under high-temperature conditions, thereby improving the stability of power device products. Attached Figure Description

[0016] Figure 1 The present application provides a structure for a high-temperature leakage current detection device for semiconductor devices. Figure 1 ; Figure 2 The present application provides a structure for a high-temperature leakage current detection device for semiconductor devices. Figure 2 ; Figure 3 The present application provides a structure for a high-temperature leakage current detection device for semiconductor devices. Figure 3 ; Figure 4 This is a flowchart of a high-temperature leakage current detection method for semiconductor devices provided in an embodiment of this application. Detailed Implementation

[0017] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0018] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0019] In addition, the use of “based on” or “according to” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” or “according to” one or more conditions or values ​​can in practice be based on additional conditions or values ​​beyond those conditions.

[0020] Power devices are often used in high-temperature environments (such as engine compartment temperatures exceeding 125°C) in applications such as new energy vehicles, industrial motors, and photovoltaic inverters. High-temperature leakage current detection can simulate actual operating conditions and verify the stability of devices under extreme temperatures. In addition, leakage current is a critical consideration for general automotive-grade power semiconductors, and leakage current detection can detect microscopic defects inside individual products (such as lattice defects and weak points in the oxide layer).

[0021] Currently, semiconductor power devices cannot be completely screened out through a single electrical measurement. This can lead to device failure, system collapse, and huge losses under extreme operating conditions. Therefore, there is an urgent need for a leakage current detection device for semiconductor power devices in high-temperature environments.

[0022] This application simulates extreme working conditions and accelerates the failure process of microscopic defects (such as lattice defects and weak points in the oxide layer) inside the device through high temperature and high pressure stress, so as to quickly screen out products that fail early. This process can identify process fluctuations or material defects in the manufacturing process and prevent defective devices from entering the end market.

[0023] This application provides a high-temperature leakage current detection device for semiconductor devices, such as... Figure 1 As shown, the device includes: a regulated power supply 10 and a test circuit 20, wherein the regulated power supply 10 is used to power the test circuit 20, and the test circuit 20 is placed in a high-temperature oven; like Figure 2 As shown, the test circuit 20 includes a carrier board 202 and a circuit protection unit 201; Multiple power devices are connected to the carrier plate 202, and each power device corresponds to a circuit protection unit 201. The power device and the corresponding circuit protection unit 201 are connected in parallel. The circuit protection unit 201 is connected to the gate of the power device, the source of the power device is short-circuited, and the drain of the power device is short-circuited. The test circuit applies voltage to the drain and source of the power device. The circuit protection unit 201 is used to blow the fuse when the leakage current of the power device exceeds a first threshold, so as to detect the leakage current of the power device based on whether the circuit protection unit 201 is open-circuited. Furthermore, the threshold value of the current specification of the selected circuit protection unit 201 can be used as a screening criterion for the power device.

[0024] The temperature of the high-temperature oven can be above 125℃. The specific temperature of the high-temperature oven can be set according to the test conditions, and this application does not impose specific limitations on it.

[0025] The output voltage of the regulated power supply 10 can be set according to the test conditions. It can be used to output high voltage to test the leakage current of power devices under high voltage conditions.

[0026] This application designs a method to continuously monitor the leakage current of power devices under high temperature and high pressure conditions for 48 hours. This allows for a clear visualization of leakage current changes and enables the direct screening of products with high leakage current under high temperature conditions, effectively avoiding losses caused by product failure under high temperature conditions in practical applications. The power device is inserted into a carrier board 202, which is then placed in a sealed high-temperature environment. A regulated power supply 10 supplies voltage to the power device. The power device and a fuse are connected in parallel, and the rated current of the fuses are consistent. The leakage current of the power device is continuously monitored. When the leakage current of the power device is too high, the corresponding fuse will burn out. The condition of the power device can be assessed by measuring whether the fuse is open.

[0027] Optionally, the circuit protection unit 201 includes a fuse; the fuse is used to blow when the leakage current of the power device is greater than a first threshold, so as to achieve circuit isolation.

[0028] Optionally, the carrier board 202 is used to connect the power device to the test circuit 20. The carrier board 202 is provided with multiple pins, and the source, gate and drain of each power device are connected to the corresponding pins.

[0029] Optionally, the power device further includes: a current detection unit connected in series between the regulated power supply 10 and the test circuit 20; the current detection unit is used to collect the current of the test circuit 20 in real time.

[0030] Optionally, the current detection unit includes: an ammeter or a multimeter.

[0031] Optionally, the device further includes a processor, which is configured to: receive the current sent by the current detection unit in real time; and if the current is greater than a second threshold, generate a control command, which is configured to instruct the regulated power supply 10 to disconnect from the test circuit 20.

[0032] Optionally, the processor can be a processing chip, computer equipment, terminal equipment, server or server cluster, etc., and the embodiments of this application do not specifically limit it.

[0033] It should be noted that the device includes a current detection unit connected in series between the regulated power supply 10 and the test circuit 20. This unit is used to collect the current of the test circuit 20 and send the collected current to the processor in real time. The processor receives the current sent by the current detection unit in real time. If the current exceeds a second threshold, it indicates a power-on abnormality, which may indicate an abnormal connection between the source, gate, and drain of the power device. In this case, the processor generates a control command to disconnect the regulated voltage from the test circuit 20.

[0034] Optionally, the carrier board 202 includes multiple pins, and the source, gate, and drain of the power device are connected to the corresponding pins.

[0035] For example, this application illustrates the case of three power devices connected to a carrier board, such as... Figure 3 As shown, the gate of the power device is connected to pins 1 and 6 on the carrier plate 202, the source of the power device is connected to pins 2 and 5 on the carrier plate 202, and the drain of the power device is connected to pins 3 and 4 on the carrier plate 202.

[0036] This application continuously monitors the leakage current of power devices in a high-temperature environment. In a high-temperature oven, the product is inserted into the carrier board 202, and the carrier board 202 is powered by a regulated power supply 10. The pins of the power devices begin to carry power. A multimeter is connected in series in the circuit, and the leakage current value is read in real time by the processor.

[0037] Optionally, the test circuit 20 further includes a protection resistor, such as... Figure 3 The resistors R54, R51, or R57 are used in the protection resistor. The first end of the protection resistor is connected to the source of the power device, and the second end of the protection resistor is connected to the negative terminal of the regulated power supply 10.

[0038] It should be noted that pins 4 and 5 of the test circuit 20 are connected to two zero-ohm resistors respectively. These two zero-ohm resistors enable quick and convenient measurement, configuration and troubleshooting without changing the PCB hardware, which greatly improves testing efficiency and problem-solving speed.

[0039] Optionally, the first end of the circuit protection unit 201 is connected to the positive terminal of the regulated power supply 10, and the second end of the circuit protection unit 201 is connected to the gate of the power device.

[0040] This application provides a high-temperature leakage current detection device for semiconductor devices. The device includes a regulated power supply 10 and a test circuit 20. The regulated power supply 10 supplies power to the test circuit 20, which is placed in a high-temperature oven. The test circuit 20 includes a carrier plate 202 and a circuit protection unit 201. Multiple power devices are connected to the carrier plate 202, with each power device corresponding to a circuit protection unit 201. The power devices and their corresponding circuit protection units 201 are connected in parallel. The circuit protection unit 201 is connected to the gate of the power device, with the source and drain of the power device short-circuited. The circuit protection unit 201 is used to fuse when the leakage current of the power device exceeds a first threshold. This allows for the detection of leakage current in the power device based on whether the circuit protection unit 201 is open. If the circuit protection unit 201 is open, it indicates that the power device is leaking current at high temperatures. This enables leakage current detection of semiconductor power devices under high-temperature conditions, thereby improving the stability of power device products.

[0041] Furthermore, this application designs a screening scheme for continuous leakage current detection under high temperature environment in accordance with power semiconductor testing requirements. This scheme can not only intuitively show the changes in leakage current, but also directly screen out products with large leakage current under high temperature environment, effectively avoiding the losses caused by product failure under high temperature conditions in practical applications.

[0042] Furthermore, this application can completely eliminate power semiconductor devices with excessive leakage current at the application end, thereby improving the performance at the application end. After screening by continuous high-temperature leakage current monitoring, and then testing, the leakage failure rate is 0, which can effectively eliminate power devices with excessive leakage current.

[0043] This application also provides a method for detecting high-temperature leakage current in semiconductor devices. This method is applied to a high-temperature leakage current detection device for semiconductor devices. The device includes: a regulated power supply and a test circuit. The regulated power supply powers the test circuit, which is placed in a high-temperature oven. The test circuit includes a carrier board and a circuit protection unit. Multiple power devices are connected to the carrier board, with one power device corresponding to one circuit protection unit. The power device and its corresponding circuit protection unit are connected in parallel. The circuit protection unit is connected to the gate of the power device. The source and drain of the power device are short-circuited. A voltage is applied to the drain and source of the power device through the test circuit. Figure 4 As shown, the method includes the following steps: Step 401: The circuit protection unit blows the fuse when the leakage current of the power device exceeds the first threshold. Step 402: Detect the leakage current of the power device based on whether the circuit protection unit is open.

[0044] Optionally, the step of detecting leakage current of the power device based on whether the circuit protection unit is open-circuited includes: If the circuit protection unit is open, it indicates that the leakage current of the power device corresponding to the circuit protection unit is greater than the preset current. If the circuit protection unit is open, it indicates that the leakage current of the power device corresponding to the circuit protection unit is less than the preset current.

[0045] Optionally, the power device further includes: a current detection unit, the current detection unit being connected in series between the regulated power supply and the test circuit; the method further includes: The current of the test circuit is collected in real time using the current detection unit.

[0046] Optionally, the apparatus further includes a processor, and the method further includes: The processor receives the current sent by the current detection unit in real time. If the current is greater than the second threshold, a control command is generated to instruct the regulated power supply to disconnect from the test circuit.

[0047] Optionally, the carrier board includes multiple pins, and the source, gate, and drain of the power device are connected to the corresponding pins.

[0048] Optionally, the test circuit further includes a protection resistor, the first end of which is connected to the source of the power device, and the second end of which is connected to the negative terminal of the regulated power supply.

[0049] Optionally, the first terminal of the circuit protection unit is connected to the positive terminal of the regulated power supply, and the second terminal of the circuit protection unit is connected to the gate of the power device.

[0050] Optionally, the circuit protection unit includes a fuse; the method further includes: The fuse melts when the leakage current of the power device exceeds a first threshold, thereby achieving circuit isolation.

[0051] Optionally, the current detection unit includes: an ammeter or a multimeter.

[0052] The high-temperature leakage current detection device for semiconductor devices provided in this application can perform the above-described high-temperature leakage current detection method for semiconductor devices. Its implementation principle and technical effects are similar, and will not be repeated here. Specific limitations regarding the high-temperature leakage current detection method for semiconductor devices can be found in the limitations of the high-temperature leakage current detection device for semiconductor devices described above, and will not be repeated here.

[0053] The temperature control method for the cryogenic imaging system provided in this application can be executed by an electronic device, which can be a controller, processor, processing chip, computer equipment, terminal equipment, server or server cluster. This application does not specifically limit this.

[0054] In another embodiment of this application, a computer-readable storage medium is also provided, on which a computer program is stored, wherein when the computer program is executed by a processor, the steps of the high-temperature leakage current detection method for semiconductor devices as described in the embodiments of this application are implemented.

[0055] In another embodiment of this application, a computer program product is also provided, which includes computer instructions that, when executed on a high-temperature leakage current detection device for semiconductor devices, cause the high-temperature leakage current detection device for semiconductor devices to perform each step of the high-temperature leakage current detection method for semiconductor devices in the method flow shown in the above method embodiment.

[0056] In the above embodiments, implementation can be achieved, in whole or in part, through software, hardware, firmware, or any combination thereof. When implemented using software programs, implementation can be, in whole or in part, in the form of a computer program product. This computer program product includes one or more computer instructions. When these computer instructions are loaded and executed on a computer, all or part of the flow or function according to the embodiments of this application is generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, computer instructions can be transmitted from one website, computer, server, or data center to another via wired (e.g., coaxial cable, fiber optic, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium accessible to a computer or a data storage device containing one or more servers, data centers, etc., that can be integrated with the medium. The available media can be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., DVDs), or semiconductor media (e.g., solid-state disks, SSDs).

[0057] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0058] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A high-temperature leakage current detection device for semiconductor devices, characterized in that, The device includes: a regulated power supply and a test circuit, wherein the regulated power supply is used to power the test circuit, and the test circuit is placed in a high-temperature oven; The test circuit includes a carrier board and a circuit protection unit; Multiple power devices are connected to the carrier board, and each power device corresponds to a circuit protection unit. The power device and the corresponding circuit protection unit are connected in parallel. The circuit protection unit is connected to the gate of the power device, the source of the power device is short-circuited, and the drain of the power device is short-circuited. The test circuit applies voltage to the drain and source of the power device. The circuit protection unit is used to blow the fuse when the leakage current of the power device is greater than a first threshold, so as to detect the leakage current of the power device based on whether the circuit protection unit is open.

2. The apparatus according to claim 1, characterized in that, The power device further includes a current detection unit, which is connected in series between the regulated power supply and the test circuit. The current detection unit is used to collect the current of the test circuit in real time.

3. The apparatus according to claim 2, characterized in that, The device further includes a processor, the processor being configured to: The current sent by the current detection unit is received in real time. If the current is greater than the second threshold, a control command is generated. The control command is used to instruct the regulated power supply to disconnect from the test circuit.

4. The apparatus according to claim 1, characterized in that, The carrier board includes multiple pins, and the source, gate, and drain of the power device are connected to the corresponding pins.

5. The apparatus according to claim 1, characterized in that, The test circuit also includes a protection resistor, the first end of which is connected to the source of the power device, and the second end of which is connected to the negative terminal of the regulated power supply.

6. The apparatus according to claim 1, characterized in that, The first terminal of the circuit protection unit is connected to the positive terminal of the regulated power supply, and the second terminal of the circuit protection unit is connected to the gate of the power device.

7. The apparatus according to claim 1, characterized in that, The circuit protection unit includes: a fuse; The fuse is used to melt when the leakage current of the power device exceeds a first threshold, thereby achieving circuit isolation.

8. The apparatus according to claim 1, characterized in that, The current detection unit includes: an ammeter or a multimeter.

9. A method for detecting high-temperature leakage current in semiconductor devices, characterized in that, A high-temperature leakage current detection device for semiconductor devices is provided. The device includes: a regulated power supply and a test circuit. The regulated power supply powers the test circuit, which is placed in a high-temperature oven. The test circuit includes a carrier board and a circuit protection unit. Multiple power devices are connected to the carrier board, with one power device corresponding to one circuit protection unit. The power devices and their corresponding circuit protection units are connected in parallel. The circuit protection unit is connected to the gate of the power device. The source and drain of the power devices are short-circuited. A voltage is applied to the drain and source of the power devices through the test circuit. The method includes: The circuit protection unit blows the fuse when the leakage current of the power device exceeds a first threshold. The leakage current of the power device is detected based on whether the circuit protection unit is open.

10. The method according to claim 9, characterized in that, The step of detecting leakage current of the power device based on whether the circuit protection unit is open-circuited includes: If the circuit protection unit is open, it indicates that the leakage current of the power device corresponding to the circuit protection unit is greater than the preset current. If the circuit protection unit is open, it indicates that the leakage current of the power device corresponding to the circuit protection unit is less than the preset current.

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