Electricity storage device of electromagnetic quantum state chip and preparation method of electricity storage device

Abstract

The invention relates to the technical field of microscopic particles, and discloses an electricity storage device of an electromagnetic quantum state chip and a preparation method thereof, the electricity storage device of the electromagnetic quantum state chip comprises a magnetic quantum state electricity storage chip device, the magnetic quantum state electricity storage chip device is formed by combining a plurality of layers of electricity storage films and a metal oxide field effect transistor, the magnetic quantum state power storage chip device is manufactured on a silicon wafer through a semiconductor manufacturing process, the power storage film layer comprises a columnar magnetic nanometer convex layer, and columnar magnetic nanometer convex points in the columnar magnetic nanometer convex point layer are wrapped by a dielectric substance layer. Compared with a lithium ion battery which is commonly used at present, the electricity storage device of the magnetic quantum state chip has the advantages that the cell density is improved, the weight and the size are reduced under the same load operation condition, but the electricity storage capacity is improved; the magnetic quantum state power storage device can be charged quickly; large-scale manufacturing can reduce the production cost; and the method has the advantages of high safety and high cost performance.

Description

Technical Field

[0001] This invention relates to the field of microparticle technology, specifically to an energy storage device for an electromagnetic quantum state chip and its fabrication method. Background Technology

[0002] The main function of energy storage devices is to efficiently, quickly, and safely store and output electrical energy. Energy storage devices are widely used in personal and household appliances such as mobile phones, laptops, communication devices, flashlights, vacuum cleaners, audio-visual equipment, agricultural tools, and power tools. Portable versions have also been developed for easy and convenient use. They are even used in electric vehicles, drones, power grid peak shaving, telecommunications transmission, electric ships, as well as in defense and aerospace weapons, multi-functional combat suits, submarines, aircraft, tanks, transport vehicles, warships, aircraft carriers, missiles, rockets, and spacecraft. Therefore, the development and application of energy storage devices have unlimited potential.

[0003] In recent years, environmental protection and energy have consistently been serious, conflicting, and equally important issues for global citizens, crucial to human survival and sustainable development. For centuries, the primary energy system, based on fossil fuels such as oil, coal, and natural gas, has faced severe challenges due to carbon emissions, global warming, and extreme climate change. Non-renewable fossil fuels are gradually becoming depleted, increasing the risk of energy crises and causing serious environmental pollution and ecological imbalance. Therefore, the utilization of renewable energy sources, including hydropower, solar energy, wind power, nuclear power, geothermal energy, biomass energy, and other clean energy sources, has been widely researched and applied.

[0004] Currently used energy storage devices mainly include lead-acid batteries, lithium-ion batteries, lithium iron batteries, and hydrogen fuel cells. However, the shortcomings of these batteries, such as large size, heavy weight, energy storage, low cell power density, long charging time, and high production cost, still need to be improved.

[0005] As early as 1988, French scientist Albert Feuer and German scientist Peter Grünberg independently discovered this special phenomenon: that very weak magnetic changes can lead to very significant changes in the resistance of magnetic materials. At that time, Albert Feuer found in multilayer iron-chromium films that a slight change in the magnetic field could cause a drastic change in resistance, with the magnitude of the change being more than ten times greater than usual. He named this effect the giant magnetoresistance (GMR) effect and shared the 2007 Nobel Prize in Physics with Peter Grünberg. The giant magnetoresistance (GMR) effect is a quantum mechanical effect that arises from layered magnetic thin film structures. This structure is composed of alternating layers of ferromagnetic and non-ferromagnetic materials. When the magnetic moments of the ferromagnetic layers are parallel, spin-related scattering of charge carriers is minimal, and the material has minimal resistance. When the magnetic moments of the ferromagnetic layers are antiparallel, spin-related scattering is strongest, and the material has maximum resistance.

[0006] The key to the rapid charging speed of quantum batteries lies in the theory of quantum entanglement. When multiple particles interact with each other, their individual properties become integrated into the overall properties, making it impossible to describe the properties of each particle individually. This means that when two objects are entangled, their individual characteristics are shared, and to some extent, they lose their uniqueness, thus accelerating the charging process. The more qubits there are, the more quantum entanglement there is, and the faster the charging process. Charging time is inversely proportional to the number of qubits. The more batteries there are, the faster the quantum battery charges.

[0007] Therefore, solving the above problems has become the goal of research and invention in this field. Summary of the Invention

[0008] To address the shortcomings of existing technologies, this invention provides an energy storage device based on an electromagnetic quantum state chip and its fabrication method, thereby solving the problems mentioned in the background art, such as the large size, heavy weight, low energy storage capacity, low cell power density, long charging time, and high production cost of currently used energy storage devices, including lead-acid batteries, lithium-ion batteries, lithium iron batteries, and hydrogen fuel cells.

[0009] To achieve the above objectives, the present invention provides the following technical solution: an energy storage device for an electromagnetic quantum state chip, comprising a magnetic quantum state energy storage chip device, wherein the magnetic quantum state energy storage chip device is composed of several layers of energy storage thin films and metal-oxide-semiconductor field-effect transistors, the magnetic quantum state energy storage chip device is fabricated on a silicon wafer using semiconductor processes, the energy storage thin film layer includes columnar magnetic nanobumps, the columnar magnetic nanobumps include positive magnetic nanobumps and negative magnetic nanobumps, and the columnar magnetic nanobumps in the columnar magnetic nanobump layer are covered by a dielectric layer.

[0010] Preferably, the columnar magnetic nanobump thin film layer can be made of iron, cobalt, or ruthenium alloy material, specifically iron-platinum.

[0011] Preferably, the thickness of the columnar magnetic nanobump layer film is 8-10 nanometers, and the diameter of the columnar magnetic nanobumps is 4-5 nanometers.

[0012] Preferably, the energy storage device chip is packaged using a ball grid array.

[0013] Preferably, in step S1, after the silicon wafer undergoes a cleaning process, hydrogen and oxygen are introduced through a heating furnace tube to perform a thermal growth process, forming a silicon dioxide thin film insulating layer on the silicon substrate.

[0014] S2. Deposit a silicon nitride thin film passivation layer using a chemical vapor deposition (CVD) device;

[0015] S3. A columnar magnetic nanobump process is performed using a high-vacuum radio frequency magnetron sputtering equipment to form a columnar magnetic nanobump thin film layer on the wafer surface;

[0016] S4. The above columnar magnetic nanobump thin film layer is vacuum heated and annealed, and a strong magnetic field is applied to make the columnar magnetic nanobumps become permanent magnets.

[0017] S5. Then, a high-k dielectric material sputtering process is performed using a high-vacuum radio frequency magnetron sputtering equipment. The columnar magnetic nanobumps on the wafer surface are coated with dielectric material to form a dielectric thin film layer.

[0018] S6. Repeat steps S3 to S5 several times to form several layers of permanent magnetic columnar magnetic nanobump thin film and high-k dielectric layer.

[0019] S7. Deposit a silicon nitride thin film passivation layer using a chemical vapor deposition (CVD) device;

[0020] S8. Standard process for fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) for use as switches and controls in energy storage units;

[0021] S9. Apply adhesive to the front side of the wafer and grind and thin the back side of the wafer. After the back thinning process is completed, remove the adhesive from the front side.

[0022] S10. The upper and lower layers of the wafer are deposited using a physical vapor deposition (PVD) device;

[0023] S11. After the wafer core is probed, it is diced, packaged and tested to form a standard energy storage device chip.

[0024] S12. The battery system integrator, according to the power capacity requirements of the battery, packages the standard energy storage device in step S11 and connects them in series and parallel, then combines them with the battery charging and discharging intelligent management unit to form a battery module of the magnetic quantum state chip energy storage device.

[0025] Preferably, the columnar magnetic nanobump layer is composed of a columnar magnetic nanobump film and a dielectric. The columnar magnetic nanobump layer film can be formed by a self-assembled nanodot deposition method, wherein particles of magnetic target material made of iron, cobalt or ruthenium alloy are placed on a silicon dioxide target, and a sputtering process is performed in a high-vacuum radio frequency magnetron sputtering equipment to form a columnar magnetic nanobump film layer of iron, cobalt or ruthenium alloy material on the wafer surface.

[0026] Preferably, the columnar magnetic nanobump layer film can also be deposited using physical vapor deposition equipment through evaporation or plasma processes. A special gas is introduced into a magnetic target material made of iron, cobalt, or ruthenium alloys to transfer the magnetic material into atoms or molecules from the target material to the silicon wafer surface to form a columnar magnetic nanobump film layer made of iron, cobalt, or ruthenium alloys.

[0027] Preferably, the dielectric layer is made of titanium oxide, and the dielectric thin film is formed by self-assembly nanodot deposition or physical vapor deposition in a high-vacuum radio frequency magnetron sputtering equipment or physical vapor deposition equipment through processes such as evaporation, sputtering or plasma deposition; the dielectric layer is composed of a material with a high dielectric constant, forming several layers of dielectric thin film.

[0028] Compared with the prior art, the beneficial effects of the present invention are:

[0029] Compared with currently used lithium-ion batteries, the energy storage device of this electric quantum state chip increases cell density, reduces weight and volume under the same load conditions, while increasing energy storage capacity; moreover, this magnetic quantum state energy storage device can be charged quickly; mass production can reduce production costs; and it has the advantages of high safety and high cost performance. Attached Figure Description

[0030] Figure 1 This is a schematic diagram of the structure of a magnetic quantum state energy storage chip according to the present invention;

[0031] Figure 2 This is a schematic diagram of the columnar magnetic nanobumps of the chip of the present invention (I);

[0032] Figure 3 This is a schematic diagram (II) of the columnar magnetic nanobumps of the chip of the present invention;

[0033] Figure 4 This is a schematic diagram showing the completed packaging of the magnetic quantum state energy storage chip device of the present invention;

[0034] Figure 5 This is a schematic diagram of the fabrication process of the magnetic quantum state energy storage chip device of the present invention.

[0035] In the figure: 1. Magnetic quantum state energy storage chip device;

[0036] 2. Magnetic nanodot quantum chip; 20. Energy storage thin film stack; 21. Silicon wafer; 22. Insulating layer; 23. Passivation layer;

[0037] 24. Columnar magnetic nanobump layer; 241. Positive columnar magnetic nanobump; 242. Reverse columnar magnetic nanobump;

[0038] 25. Dielectric layer;

[0039] 26. Metal-oxide-semiconductor field-effect transistor; 261. Gate; 262. Source; 263. Drain;

[0040] 27. Metal electrode; 29. ​​Spherical pin of grid array package. Detailed Implementation

[0041] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0042] Please refer to the following: Figure 1-5 In using this invention, to address the shortcomings of currently used energy storage devices such as lead-acid batteries, lithium-ion batteries, lithium iron batteries, and hydrogen fuel cells, which suffer from large size, heavy weight, low energy storage capacity, low cell power density, long charging time, and high production costs, this invention utilizes a magnetic quantum state chip energy storage device. This device integrates background technologies such as GMC, GMR, Lorentz force, quantum entanglement, and chip design and fabrication processes used in research and experimentation. It achieves a tight magnetic field arrangement within the columnar magnetic nanobump layer, maintaining charge storage similar to a capacitor. When charge is stored in a magnetic field, it is difficult to release; when this magnetic capacitor stores… The more energy units, i.e., the more qubits, the more quantum entanglement, the longer the charging time of a quantum state energy storage chip is. The more energy storage units, the faster the charging. Therefore, compared with the commonly used lithium-ion batteries, the cell density is increased by several times. Under the same load conditions, its weight and volume are reduced by several times, and after upgrades and improvements, even by hundreds of times. The energy storage capacity is increased by tens of times. Moreover, this magnetic quantum state energy storage device can be charged quickly in a few minutes. After large-scale manufacturing, production costs can be reduced. It also has the advantages of high safety and high cost performance. Considering all these advantages, the future market potential is huge.

[0043] Compared with related technologies, the advantages and beneficial effects of the present invention are as follows: the magnetic quantum state energy storage device has advantages such as high energy density, fast charging and discharging efficiency, long-term energy storage with zero leakage, high voltage and high current output, safety, non-explosiveness, non-flammability and no chemical reaction. Moreover, its lightweight, small size and high efficiency characteristics are suitable for various electrical devices that require high-efficiency batteries. When the magnetic quantum state chip of the present invention is charged, the energy storage device directly stores the charge in the tiny capacitor units in the magnetic columnar nanobump layer. In particular, when the capacitor is charged, the charge can be maintained more tightly, increasing the charge density in the magnetic thin film layer, thereby generating the giant magnetocapacitance (GMC) effect.

[0044] In the energy storage device of the magnetic quantum state chip, in addition to the GMC effect, there is also a quantum physical effect, namely the giant magnetoresistance (GMR) effect. The giant magnetoresistance effect causes the resistance to react to the applied electric field, with a significant change from the zero field high impedance state to the high field low impedance state; therefore, the giant magnetoresistance effect is used as a high-efficiency insulator.

[0045] A magnetic quantum state chip-based energy storage device and its fabrication method are disclosed. The magnetic quantum state energy storage chip 2 mainly comprises several layers of magnetic quantum state energy storage thin films combined with metal-oxide-semiconductor field-effect transistors (MOSFETs). The magnetic quantum state energy storage chip 2 units are fabricated on a silicon wafer 21 using semiconductor processes. After dicing, packaging, and testing, this mass-produced magnetic quantum state energy storage chip device 1 is assembled into battery modules by battery system integrators according to power requirements. The several layers of energy storage thin films 24 comprise hundreds of millions of magnetic capacitor energy storage units connected in parallel in each magnetic quantum state thin film 24. The magnetic capacitor energy storage thin film layer 20 comprises hundreds of millions of positive columnar magnetic... The magnetic capacitor storage unit comprises two adjacent positively oriented columnar magnetic nanobumps 241 and 242 with opposite magnetic poles, and a dielectric 25 covering them. The positively oriented columnar magnetic nanobumps 241 and 242 with opposite magnetic poles are formed. The positively oriented columnar magnetic nanobumps 241 and 242 with opposite magnetic poles are processed into permanent magnets by heating and applying a strong magnetic field. Hundreds of millions of adjacent positively oriented columnar magnetic nanobumps 241 and 242 with opposite magnetic poles are covered by a dielectric 25 layer.

[0046] In the above scheme, the energy storage device of the magnetic quantum state chip includes a columnar magnetic nanobump layer 24 composed of a columnar magnetic forward columnar magnetic nanobump 241, a reverse columnar magnetic nanobump 242 film and a dielectric 25; the columnar magnetic nanobump layer 24 film can be formed by a self-assembled nanodot deposition method, wherein particles of magnetic target materials such as iron, cobalt, and ruthenium alloys are placed on a silicon dioxide target, and a sputtering process is performed in a high-vacuum radio frequency magnetron sputtering equipment to form a columnar magnetic nanobump film layer 24 of iron, cobalt, ruthenium alloys on the wafer surface.

[0047] In the above scheme, the energy storage device of the magnetic quantum state chip includes a columnar magnetic nanobump layer 24 composed of a forward columnar magnetic nanobump 241, a reverse columnar magnetic nanobump 242 film and a dielectric 25; the columnar magnetic nanobump layer film can also be processed by physical vapor deposition equipment, plasma and other processes, to pass a special gas through a magnetic target material of iron, cobalt, ruthenium and other alloys to transfer the magnetic material into atoms or molecules from the target material to the silicon wafer surface to form a columnar magnetic nanobump film layer 24 of iron, cobalt, ruthenium and other alloys.

[0048] Furthermore, the columnar magnetic nanobump layer 24 film can be made of iron-platinum (FePt) alloys such as iron, cobalt, and ruthenium. The chemically ordered face-centered tetragonal (FCT) phase of iron-platinum (FePt) has advantages such as good chemical stability, high magnetocrystalline anisotropy, and saturation magnetization, which are all advantages of selecting positive columnar magnetic nanobumps 241 and negative columnar magnetic nanobumps 242 materials.

[0049] In the above scheme, the energy storage device of the magnetic quantum state chip uses a dielectric layer 25 made of high-k dielectric thin film layers such as barium titanate (BaTiO3), strontium titanate (SrTiO3, STO), lead titanate (PbTiO3, PTO), or zirconium oxide (ZrO2). These materials have high dielectric constants, low dielectric losses, and high-k materials can achieve smaller size and increased capacitance density. They can also match semiconductor characteristics in the manufacturing process, reduce leakage current, and improve reliability. These are all advantages of using dielectric material 25.

[0050] Furthermore, the dielectric layer thin film preparation method employs self-assembled nanodot deposition or physical vapor deposition methods to form a high-k dielectric thin film dielectric layer 25, such as barium titanate, strontium titanate, lead titanate, or zirconium oxide, through processes such as evaporation, sputtering, or plasma deposition in a high-vacuum radio frequency magnetron sputtering equipment or physical vapor deposition equipment.

[0051] Furthermore, the dielectric layer 25 is formed by preparing several layers of barium titanate or strontium titanate thin films.

[0052] In the above scheme, the thickness of the iron-platinum columnar magnetic nanobump layer 24 film is 8 to 10 nanometers, and the diameter of the iron-platinum forward columnar magnetic nanobump 241 and the reverse columnar magnetic nanobump 242 is between 4 and 5 nanometers.

[0053] In the above-described scheme, the magnetic quantum state chip energy storage device and its fabrication method, the embodiments of the present invention include the following steps:

[0054] Furthermore, S1 uses an 8-inch diameter wafer from Sino-American Silicon Products Co., Ltd. with a thickness of approximately 725 micrometers. The p-type single-crystal silicon wafer 21 is used as the initial material. After being cleaned by the RCA process in the GPT Wet Cleaning equipment, a thermal growth process is carried out by heating the furnace tube with hydrogen and oxygen through the furnace tube using Hitachi Kokusai's thermal processing furnace tube. A silicon dioxide (SiO2) thin film layer is formed on the silicon substrate. Hydrogen (H2) and oxygen (O2) are introduced into the furnace tube and heated to 930°C. A 10-nanometer thick silicon dioxide insulating layer 22 is thermally grown in the hydrogen and oxygen vapor environment. The silicon dioxide insulating layer 22 has a simple process and ideal performance. As an insulating layer 22, it prevents current leakage to the silicon substrate.

[0055] Furthermore, S2 uses a low-pressure chemical vapor deposition (LPCVD) device from Tokyo Electron (TEL) of Japan to deposit a silicon nitride (SiN) thin film passivation layer 23. The silicon nitride passivation layer 23 is 10 nanometers thick and its main function is to protect the film stacked on top. It has good moisture resistance, which can reduce leakage current, prevent internal metal corrosion, and prevent high-frequency damage to the chip.

[0056] Furthermore, S3 used Semicore's high-vacuum RF magnetron sputtering equipment to sputter forward columnar magnetic nanobumps 241 and reverse columnar magnetic nanobumps 242, forming a columnar iron-platinum columnar magnetic nanobump thin film layer 24 on the wafer surface. The forward and reverse columnar magnetic nanobumps 241 and 242 have a thickness of 8-10 nanometers and a diameter of 4-5 nanometers. The target used consisted of iron-platinum (FePt) particles arranged on a silicon dioxide substrate, with a target particle ratio of 52% iron and 48% platinum. The process involved passing through 8 sccm of argon (Ar) gas, driving power of approximately 80W, and a deposition rate of less than [missing information]. Low pressure and low power were employed to control the formation of L10 chemically grade columnar magnetic nanobumps from iron-platinum particles, with the easy magnetization axis perpendicular to the film plane. When iron-platinum particles were sputtered and deposited with silica oxide, the nanoparticles were dispersed within the oxide. The forward columnar magnetic nanobumps 241 and reverse columnar magnetic nanobumps 242 had a thickness of 8–12 nm, and the iron-platinum columnar magnetic nanobumps had a diameter of 4–6 nm. Chemically ordered iron-platinum face-centered tetragonal (FCT) phase, due to its good chemical stability, high magnetocrystalline anisotropy (Ku ~10⁸ erg / cm³), and saturation magnetization Ms = 13.8 kG, is a good material choice for this application.

[0057] Furthermore, the same method can also be used with different targets, namely, cobalt chromium platinum (CoCrPt) particles are arranged on a silicon dioxide substrate and sputtered onto the wafer surface to form a columnar cobalt platinum columnar magnetic nanobump thin film layer 24.

[0058] Furthermore, in step S4, the aforementioned iron-platinum columnar magnetic nanobump thin film layer 24 is vacuum annealed using a furnace tube from Tokyo Electron (TEL) and a strong magnetic field is applied to transform the iron-platinum forward columnar magnetic nanobumps 241 and reverse columnar magnetic nanobumps 242 into permanent magnets. The annealing process is carried out under vacuum annealing at a pressure of 4.8 × 10⁵ Pa and a temperature of 750 °C for 35 minutes, transforming the iron-platinum face-centered cubic (FCC) lattice structure into a face-centered tetragonal (FCT) phase structure.

[0059] Furthermore, S5 uses Semicore's high-vacuum RF magnetron sputtering equipment to sputter strontium titanate dielectric. The iron-platinum forward columnar magnetic nanobumps 241 and reverse columnar magnetic nanobumps 242 on the wafer surface are coated with barium titanate or strontium titanate dielectric 25 to form a dielectric thin film layer. Barium titanate or strontium titanate dielectric 25 has a high dielectric constant, low dielectric loss, and the high k value material can achieve size reduction and increased capacitance density. Matching semiconductor characteristics in the process can reduce leakage current and improve reliability. These are all advantages of using dielectric 25 material.

[0060] Furthermore, S6 then repeats the process of steps S3 to S5 hundreds of times to form a permanent magnetic iron-platinum columnar magnetic nanobump film 24 and a strontium titanate dielectric layer 25 with hundreds of layers; forming a magnetic capacitor energy storage stack film 20 with a thickness of about 10 to 12 micrometers.

[0061] Furthermore, S7 uses a low-pressure chemical vapor deposition (LPCVD) equipment from Tokyo Electron (TEL) to deposit a silicon nitride (SiN) thin film passivation layer 23. The silicon nitride thin film passivation layer 23 has a thickness of 10 nanometers and its main function is to protect the stacked film and the metal-oxide-semiconductor field-effect transistor. It has good moisture resistance, which can reduce leakage current and prevent internal metal corrosion.

[0062] Furthermore, S8 then fabricates a metal-oxide-semiconductor field-effect transistor (MOSFET) 26 by applying standard processes such as high and low concentration ion doping, mask lithography, etching, diffusion, and thin film deposition through semiconductor equipment to complete the MOSFET 26, which includes a gate 261, a source 262, and a drain 263. The MOSFET 26 serves as the switch and control unit for the energy storage unit.

[0063] Furthermore, the S9 wafer is coated with adhesive on the front side and then ground and thinned on the back side. The wafer that has completed the above process is ground and thinned to a thickness of 290-298 micrometers. After the back-side thinning process is completed, the adhesive used for front-side protection is removed. In addition to reducing the size, the purpose of thinning is mainly to reduce the chip's electrothermal performance and improve efficiency.

[0064] Furthermore, S10 then uses Applied Materials' physical vapor deposition (PVD) equipment to deposit copper-aluminum metal thin film electrodes 27 on the upper and lower layers of the wafer; the thickness of the copper-aluminum metal thin film electrode layers 27 deposited in the effective areas of the upper and lower layers is 1 micrometer each; the thickness of the wafer after completing the above steps is 300 micrometers.

[0065] Furthermore, after probe testing, the S11 wafer chip is diced, packaged, and tested to form a standard energy storage device chip 1. The chip dimensions of the energy storage unit 2 are 6mm long, 6mm wide, and 0.3mm high. The packaged energy storage device chip 1 has dimensions of 7.5mm long, 7.5mm wide, and 3.0mm high. Ball grid array (BGA) packaging is used in conjunction with surface mount technology for battery system integration, reducing the size of the battery module, shortening the wires, and increasing efficiency. This improves electrothermal performance, reduces thickness and weight, decreases parasitic parameters (output voltage disturbances caused by large current changes), and increases reliability.

[0066] Furthermore, in step S12, the battery system integrator connects the standard energy storage device chip 1, which is packaged in step S11, in series and parallel according to the power capacity requirements of the battery, and combines it with the battery charging and discharging intelligent management unit to form a battery module of the energy storage device with a magnetic quantum state chip.

[0067] The general formula for calculating the capacitance of a capacitor is: C = ε0kA / D.

[0068] In the formula, C is the capacitance, ε0 is the dielectric constant, k is the dielectric constant of the material, A is the area, and D is the distance between the top and bottom.

[0069] Due to the GMC effect, the capacitance calculation formula should be modified to C'=ε0k'A / D, where k'=kxfGMC; fGMC is called the GMC coefficient, which can reach 1.6x1011 under current technology and experimental conditions.

[0070] The formula for calculating capacitor energy storage is: E = 0.5CV².

[0071] In the formula, C represents the capacitor, V represents the charging voltage, and E represents the electrical energy (which is equal to Wh when divided by 3600). The amount of electrical energy stored is proportional to the square of the charging voltage. When the fGMC of the magnetic energy storage device is 1011, that is, when a battery module composed of a set of energy storage device chips is charged at 12V, the energy storage capacity is 10Wh, while when charged at 360V, the energy storage capacity reaches 9kWh.

[0072] Storage density: This metric is expressed as capacity per square inch (Tbpsi). A 20nm x 20nm area must contain at least 10 iron-platinum columnar magnetic nanoparticles to achieve an areal density exceeding 1Tbpsi. A standard energy storage chip has a storage capacity of 1.0Wh, which, when integrated into a battery system, can achieve an output energy density of up to 1200Wh / L.

[0073] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A power storage device for an electromagnetic quantum state chip, comprising a magnetic quantum state power storage chip device, characterized in that: The magnetic quantum state energy storage chip device is composed of several layers of energy storage thin films and metal-oxide-semiconductor field-effect transistors. The magnetic quantum state energy storage chip device is fabricated on a silicon wafer using semiconductor processes. The energy storage thin film layer includes columnar magnetic nanobumps, which include positive magnetic nanobumps and negative magnetic nanobumps. The columnar magnetic nanobumps in the columnar magnetic nanobump layer are covered by a dielectric layer.

2. The energy storage device of an electromagnetic quantum state chip according to claim 1, characterized in that: The columnar magnetic nanobump thin film layer can be made of iron, cobalt, or ruthenium alloy material, specifically iron-platinum.

3. The energy storage device of an electromagnetic quantum state chip according to claim 2, characterized in that: The thickness of the columnar magnetic nanobump layer film is 8~10 nanometers, and the diameter of the columnar magnetic nanobumps is 4~5 nanometers.

4. The energy storage device of an electromagnetic quantum state chip according to claim 1, characterized in that: The energy storage device chip is packaged using a ball grid array.

5. The method for fabricating an energy storage device for an electromagnetic quantum state chip according to claim 1, characterized in that: S1. After the silicon wafer undergoes a cleaning process, hydrogen and oxygen are introduced through a heating furnace tube to carry out a thermal growth process, forming a silicon dioxide thin film insulating layer on the silicon substrate. S2. Deposit a silicon nitride thin film passivation layer using a chemical vapor deposition (CVD) device; S3. A columnar magnetic nanobump process is performed using a high-vacuum radio frequency magnetron sputtering equipment to form a columnar magnetic nanobump thin film layer on the wafer surface. S4. The above columnar magnetic nanobump thin film layer is vacuum heated and annealed, and a strong magnetic field is applied to make the columnar magnetic nanobumps become permanent magnets. S5. Then, a high-k dielectric material sputtering process is performed using a high-vacuum radio frequency magnetron sputtering equipment. The columnar magnetic nanobumps on the wafer surface are coated with dielectric material to form a dielectric thin film layer. S6. Repeat steps S3 to S5 several times to form several layers of permanent magnetic columnar magnetic nanobump thin film and high-k dielectric layer. S7. Deposit a silicon nitride thin film passivation layer using a chemical vapor deposition (CVD) device; S8. Standard process for fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) for use as switches and controls in energy storage units; S9. Apply adhesive to the front side of the wafer and grind and thin the back side of the wafer. After the back thinning process is completed, remove the adhesive from the front side. S10. The upper and lower layers of the wafer are deposited using a physical vapor deposition (PVD) device; S11. After the wafer core is probed, it is diced, packaged and tested to form a standard energy storage device chip. S12. The battery system integrator, according to the power capacity requirements of the battery, packages the standard energy storage device in step S11 and connects them in series and parallel, then combines them with the battery charging and discharging intelligent management unit to form a battery module of the magnetic quantum state chip energy storage device.

6. The method for fabricating an energy storage device for an electromagnetic quantum state chip according to claim 5, characterized in that: The columnar magnetic nanobump layer is composed of a columnar magnetic nanobump film and a dielectric. The columnar magnetic nanobump layer film can be formed by a self-assembled nanodot deposition method, in which particles of iron, cobalt or ruthenium alloy magnetic target material are placed on a silicon dioxide target, and a sputtering process is performed in a high-vacuum radio frequency magnetron sputtering equipment to form a columnar magnetic nanobump film layer of iron, cobalt or ruthenium alloy material on the wafer surface.

7. A method for fabricating an energy storage device for an electromagnetic quantum state chip according to claim 5, characterized in that: The columnar magnetic nanobump layer film can also be deposited using physical vapor deposition equipment or plasma processes. A special gas is introduced into a magnetic target material made of iron, cobalt, or ruthenium alloy to deposit magnetic materials into atoms or molecules on the silicon wafer surface through vapor deposition or plasma methods, thereby forming a columnar magnetic nanobump film layer made of iron, cobalt, or ruthenium alloy.

8. The method for fabricating an energy storage device for an electromagnetic quantum state chip according to claim 5, characterized in that: The dielectric layer is made of titanium oxide. The dielectric layer film is formed by self-assembly nanodot deposition or physical vapor deposition in a high-vacuum radio frequency magnetron sputtering equipment or physical vapor deposition equipment through processes such as evaporation, sputtering or plasma deposition. The dielectric layer is composed of several layers of dielectric film formed by materials with high dielectric constant.

Images