Semiconductor module, bus bar and method for producing semiconductor module

Abstract

A semiconductor module comprising: at least one power semiconductor die; an encapsulation body that encapsulates the power semiconductor die; a first bus bar electrically connected to the power semiconductor die and exposed from the encapsulation, the first bus bar including a first side, an opposite second side, and a lateral side connecting the first side and the second side, where the first bus bar includes a first slit and a second slit, the first slit being spaced apart from the second slit when viewed from above the first side, and the second slit being spaced apart from the first slit. The first slit and the second slit are arranged such that the first generatrix has a constriction between a distal end portion of the first slit and a distal end portion of the second slit, in which a distal end face of the first slit and a distal end face of the second slit are arranged opposite to each other and extend along parallel straight lines, and in which the first slit and the second slit are arranged such that the first generatrix has a constriction between a distal end portion of the first slit and a distal end portion of the second slit. A width of a distal end of the first slit and a width of a distal end of the second slit, measured perpendicular to a longitudinal axis of the respective slit, are wider than a remainder of the respective slit when viewed from above a first side of the first generatrix.

Description

Technical Field

[0001] This disclosure relates to a semiconductor module including a busbar with slits, a busbar for the semiconductor module, and a method for manufacturing such a semiconductor module. Background Technology

[0002] A semiconductor module may include one or more buses configured as external power contacts. The buses may be electrically connected to the internal power circuitry of the semiconductor module. During operation, current generated by the internal circuitry may flow through the buses, and current measurement may be necessary to properly drive or control the internal circuitry. This can be accomplished, for example, using one or more magnetic sensors arranged on the buses. The buses may include constrictions to increase current density, thereby also increasing the magnetic field strength at the location of the magnetic sensors. However, stringent requirements regarding the electrical performance of semiconductor modules may necessitate, for example, providing linear sensor response over a wide frequency range and / or particularly small phase errors in the sensors. Improved semiconductor modules, improved buses for semiconductor modules, and improved methods for manufacturing semiconductor modules can help address these and other challenges. Summary of the Invention

[0003] Various aspects relate to a semiconductor module comprising: at least one power semiconductor die; an encapsulation body encapsulating the power semiconductor die; and a first busbar electrically connected to the power semiconductor die and exposed from the encapsulation body, the first busbar including a first side, an opposite second side, and a lateral side connecting the first side and the second side, wherein the first busbar includes a first slit and a second slit, the first slit and the second slit being arranged such that, when viewed from above the first side, the first busbar has a contraction between a distal end of the first slit and a distal end of the second slit, wherein the distal end faces of the first slit and the second slit are arranged opposite to each other and extend along parallel straight lines, and wherein, when viewed from above the first side of the first busbar, the width of the distal end of the first slit and the width of the distal end of the second slit are wider than the remainder of the respective slits, the width being measured perpendicular to the longitudinal axis of the respective slit.

[0004] Various aspects relate to a busbar configured to connect to a semiconductor module, the busbar including: a first side, an opposite second side, and a lateral side connecting the first and second sides; and a first slit and a second slit, which, when viewed from above the first side, are arranged such that the busbar has a contraction between the distal ends of the first slit and the second slit, wherein the distal faces of the first slit and the second slit are arranged opposite to each other and extend along parallel straight lines, and wherein, when viewed from above the first side of the busbar, the width of the distal ends of the first slit and the width of the distal ends of the second slit are wider than the remainder of the respective slits, the width being measured perpendicular to the longitudinal axis of the respective slits.

[0005] Various aspects relate to a method for manufacturing a semiconductor module, the method comprising: providing at least one power semiconductor die; encapsulating the power semiconductor die with an encapsulation; providing a first busbar and electrically connecting the first busbar to the power semiconductor die, the first busbar being exposed from the encapsulation, wherein the first busbar includes a first side, an opposite second side, and a lateral side connecting the first side and the second side, wherein the first busbar includes a first slit and a second slit, the first slit and the second slit being arranged such that, when viewed from above the first side, the first busbar has a contraction between a distal end of the first slit and a distal end of the second slit, wherein the distal end faces of the first slit and the second slit are arranged opposite to each other and extend along parallel straight lines, and wherein, when viewed from above the first side of the first busbar, the width of the distal end of the first slit and the width of the distal end of the second slit are wider than the remainder of the respective slits, the width being measured perpendicular to the longitudinal axis of the respective slit.

[0006] Those skilled in the art will recognize the additional features and advantages after reading the following detailed description and reviewing the accompanying drawings. Attached Figure Description

[0007] This disclosure is illustrated in the accompanying drawings by way of example and not limitation, wherein similar or identical reference numerals refer to similar or identical elements. The elements in the drawings are not necessarily drawn to scale relative to each other. Features of the various illustrated examples can be combined unless they are mutually exclusive.

[0008] Figure 1 A cross-sectional view of a semiconductor module including a busbar with a first slit and a second slit is shown.

[0009] Figure 2A and 2B The following are examples based on two different cases. Figure 1 A detailed view of the busbars of the semiconductor module shown.

[0010] Figure 3A cross-sectional view of another semiconductor module is shown, the semiconductor module including a busbar having a first slit and a second slit and also including a receiver configured to receive a magnetic sensor.

[0011] Figure 4A and 4B Two other examples are shown. Figure 1 and Figure 3 A detailed view of the busbars of the semiconductor module shown.

[0012] Figure 5 A perspective view of a semiconductor module including multiple busbars with slits is shown.

[0013] Figure 6 This is a flowchart of an exemplary method for manufacturing a semiconductor module including a busbar with slits.

[0014] Figure 7 A schematic diagram of an electronic system including the previously described busbars and ferrite plates is shown. Detailed Implementation

[0015] In the following detailed description, known structures and elements are illustrated in schematic form to facilitate the description of one or more aspects of this disclosure. In this regard, directional terms such as “top,” “bottom,” “left,” “right,” “upper,” and “lower” are used with reference to the orientation of the described drawings. Because the components of this disclosure can be positioned in many different orientations, directional terms are used for illustrative purposes only. It should be understood that other examples can be utilized, and structural or logical changes can be made.

[0016] Furthermore, with respect to the terms “comprising,” “having,” “with,” or other variations thereof used in the detailed description or claims, these terms are intended to indicate inclusion in a manner similar to the term “comprising.” The terms “coupled” and “connected” and their derivatives may be used. It should be understood that these terms may be used to indicate that two elements cooperate or interact with each other, whether they are in direct physical or electrical contact, or whether they are not in direct contact; intermediate elements or layers may be provided between elements that are “joined,” “attached,” or “connected.” However, elements that are “joined,” “attached,” or “connected” may also be in direct contact with each other. Furthermore, the term “exemplary” is intended only as an example, not as best or optimal.

[0017] The examples of semiconductor modules described below can use various types of semiconductor dies or circuits incorporated within semiconductor dies, including: AC / DC or DC / DC converter circuits, inverter circuits, power MOS transistors, power Schottky diodes, JFETs (junction-gate field-effect transistors), power bipolar transistors, power integrated circuits, etc. Examples can also use semiconductor dies comprising: MOS transistor structures, or vertical transistor structures such as, for example, IGBTs (insulated-gate bipolar transistors), or transistor structures typically in which at least one electrical contact pad is arranged on a first main surface of the semiconductor die and at least one other electrical contact pad is arranged on a second main surface of the semiconductor die opposite to the first main surface.

[0018] High-efficiency semiconductor modules and efficient methods for manufacturing them can, for example, reduce material consumption, ohmic losses, chemical waste, etc., and thus achieve energy and / or resource savings. Therefore, as specified in this specification, improved semiconductor modules and improved methods for manufacturing them can at least indirectly contribute to green technology solutions, i.e., providing climate-friendly solutions that reduce energy and / or resource usage.

[0019] Figure 1 A cross-sectional view of a semiconductor module 100 including a semiconductor die 110, an encapsulation 120, and a first busbar 130 is shown.

[0020] Semiconductor module 100 may be, for example, a power semiconductor module configured to operate at high voltage and / or high current. For instance, semiconductor module 100 may be configured to operate at voltages of 100V or higher, or 250V or higher, or 500V or higher, or 600V or higher, or 1.2kV or higher, or 2kV or higher. Furthermore, semiconductor module 100 may be, for example, rated to conduct currents of 1A or greater, or 10A or greater, or 50A or greater, or 100A or greater, or 500A or greater.

[0021] Semiconductor module 100 may include any suitable circuitry, such as converter circuitry, inverter circuitry, half-bridge circuitry, full-bridge circuitry, etc. Semiconductor module 100 may be configured, for example, for use in automotive applications. According to one example, semiconductor module 100 is part of the main inverter of an electric motor. Semiconductor module 100 may be configured to connect to a control board or driver board, which includes control or driver circuitry configured to control or drive the (power) circuitry of semiconductor module 100.

[0022] According to one example, semiconductor module 100 includes a single power semiconductor die 100. According to another example, semiconductor module 100 includes a plurality of power semiconductor dies 110. The plurality of power semiconductor dies 110 may, for example, be arranged on a common substrate and may be electrically connected to each other via the substrate. Some or all of the plurality of power semiconductor dies 110 may, for example, be electrically connected to a first bus 130 via the substrate. The power semiconductor dies 110 may all be dies of the same type or the power semiconductor dies 110 may be dies of different types. Semiconductor module 100 may include any suitable number of power semiconductor dies 110, such as one die, two dies, four dies, six dies, etc.

[0023] Encapsulation 120 encapsulates power semiconductor dies 110. Encapsulation 120 can be configured to protect power semiconductor dies 110 from environmental hazards. In cases where the semiconductor module 100 includes multiple power semiconductor dies 110, all power semiconductor dies 110 can be encapsulated by the same encapsulation 120. According to one example, encapsulation 120 comprises or is composed of a plastic frame surrounding an internal volume, wherein one or more power semiconductor dies 110 are arranged within the internal volume. The internal volume may be at least partially filled with, for example, potting material. According to another example, encapsulation 120 comprises or is composed of a molded body. The molded body can be manufactured using any suitable molding process, such as compression molding, injection molding, or transfer molding. The molded body may, for example, include inorganic filler particles configured to reduce the thermal resistance of the molded body.

[0024] Encapsulation 120 may include a first side 121, an opposite second side 122, and a lateral side 123 connecting the first side 121 and the second side 122. According to one example, a first busbar 130 is exposed from one of the lateral sides 123 of the encapsulation 120. According to another example, the first busbar 130 is exposed from the first side 121 of the encapsulation 120.

[0025] Semiconductor module 100 may include external contacts, such as control contacts, which may be exposed, for example, from a first side 121 of the enclosure 120. The external contacts may include, for example, pins, particularly press-fit pins. An application board including, for example, control circuitry may be disposed on the first side 121 of the enclosure 120 and may be electrically connected to semiconductor module 100 via the external contacts.

[0026] According to one example, the second side 122 of the encapsulation 120 is disposed on a substrate. The substrate may, for example, include or consist of a power electronics substrate. The substrate may, for example, be one of the following types: direct-bonded copper (DBC), direct-bonded aluminum (DAB), active metal brazing (AMB), insulating metal substrate (IMS), leadframe, and printed circuit board (PCB).

[0027] One or more power semiconductor dies 110 can be mechanically and electrically coupled to the substrate via, for example, solder joints, sintered joints, joints including conductive adhesive, etc. The first bus 110 can be electrically and mechanically coupled to the substrate in the same manner or via solder joints.

[0028] According to one example, a substrate and / or heat sink may be arranged below the second side 122 of the enclosure 120. The substrate and / or heat sink may be configured, for example, to provide heat dissipation for the semiconductor module 100.

[0029] The first busbar 130 includes a first side 131, an opposite second side 132, and a lateral side 133 connecting the first side 131 and the second side 132. The first busbar 130 is electrically connected to the power semiconductor die 110. For example, the first busbar 130 may be connected to the power semiconductor die 110 via a substrate. The first busbar 130 may be, for example, brazed, sintered, welded, or glued to the substrate using conductive adhesive. According to another example, the first busbar 130 is directly coupled (e.g., welded) to the electrodes of the power semiconductor die 110.

[0030] The first busbar 130 is exposed from the enclosure 120. This can mean that the outer portion of the first busbar 130 protrudes from the enclosure 120, while the inner portion of the first busbar 130 is disposed within the enclosure 120. The outer portion can be configured to be coupled to an external device via welding and / or via mechanical means such as screws.

[0031] The first busbar 130 may include or be composed of any suitable metal or metal alloy. For example, the first busbar 130 may include or be composed of Al or Cu. Manufacturing the first busbar 130 may include, for example, a stamping process. According to one example, the first busbar is a sheet metal component.

[0032] Figure 2A and Figure 2B Details of the first busbar 130 are shown according to different examples. Figure 2A and Figure 2B The details of the first busbar 130 are shown above the first side 131.

[0033] The first busbar 130 includes a first slit 140 and a second slit 150, which are arranged such that the first busbar 130 has a contraction 160 between the distal end 140' of the first slit 140 and the distal end 150' of the second slit 150. The distal ends 140' and 150' of the first slit 140 and the second slit 150 include distal end faces 141 and 151, which are arranged such that the distal end face 141 of the first slit 140 is opposite to the distal end face 151 of the second slit 150. Furthermore, the distal end faces 141 and 151 of the first slit 140 and the second slit 150 are along parallel straight lines (they are located at...). Figure 2A and 2B (Indicated by the dashed line "A") extends. When viewed from above the first side of the first generatrix 130, the widths of the distal ends 140', 150' of the first slit 140 and the second slit 150 are wider than the rest of the corresponding slits 140, 150 (this is in... Figure 2A and 2B (Indicated by the dashed line "B"). The widths of the first slit 140 and the second slit 150 are measured perpendicular to the corresponding longitudinal axes (S1 and S2, respectively) of the first slit 140 and the second slit 150.

[0034] According to one example, when viewed from above the first side 131 of the first generatrix 130, the first slit 140 and the second slit 150 have symmetrical profiles, particularly mirror-symmetrical profiles. When viewed from above the first side 131 of the first generatrix 130, the first slit 140 and the second slit 150 may have similar or identical dimensions (e.g., within manufacturing tolerances). The first slit 140 and the second slit 150 may be arranged such that the longitudinal axes S1 and S2 coincide.

[0035] According to one example, the first slit 140 also includes two lateral sides 142 that are opposite to each other and extend parallel to each other. Furthermore, the lateral sides 142 may extend from the first of the lateral sides 133 of the first generatrix 130 to the distal end face 141 of the first slit 140. Similarly, the second slit 150 may further include two lateral sides 152 that are opposite to each other and extend parallel to each other. The lateral sides 152 of the second slit 150 may extend from the second of the lateral sides 133 of the first generatrix 130 (which may be opposite to the first of the lateral sides 133) to the distal end face 151 of the second slit 150. The lateral sides 142, 152 of the first slit 140 and the second slit 150 may extend particularly parallel to the respective longitudinal axes S1, S2 of the first slit 140 and the second slit 150.

[0036] The first busbar 130 can have any suitable dimensions. For example, the thickness of the first busbar 130, measured between the first side 131 and the second side 132, can be in the range of about 1 mm to about 5 mm. The lower limit of this range can also be about 1.2 mm, or about 1.5 mm, or about 1.8 mm, or about 2 mm, and the upper limit can also be about 4 mm, or about 3 mm, or about 2.5 mm. The width of the first busbar 130, measured between the opposite lateral sides 133, can, for example, be in the range of about 10 mm to about 50 mm. The lower limit of this range can also be about 15 mm, or about 20 mm, or about 25 mm, and the upper limit can also be about 40 mm, or about 35 mm, or about 30 mm.

[0037] The width of the contraction portion 160 in the first busbar 130 (i.e., the distance between the distal ends 141, 151 of the first slit 140 and the second slit 150) can, for example, be in the range of about 1 mm to about 4 mm. The lower limit of this range can also be about 1.2 mm, or about 1.5 mm, or about 2 mm, or about 2.2 mm, or about 2.5 mm, and the upper limit can also be about 3.5 mm, or about 3 mm, or about 2.8 mm.

[0038] According to one example, the widths of the distal ends 140', 150' of the first slit 140 and the second slit 150 are wider than the remainders of the corresponding slits 140, 150 (the widths of the distal ends 140', 150' can be measured, for example, at their widest position, while the widths of the remainders of the corresponding slits 140, 150 can be measured between opposing lateral sides 142 and between opposing lateral sides 152). For example, the widths of the distal ends 140', 150' can be approximately 1.2 times, 1.5 times, 1.8 times, or 2 times wider than the remainders of the corresponding slits 140, 150. The maximum width of the distal ends 140', 150' can, for example, range from approximately 1.5 mm to approximately 5 mm. The lower limit of this range can be approximately 1.8 mm, or approximately 2 mm, or approximately 2.2 mm, or approximately 2.5 mm, and the upper limit can be approximately 4.5 mm, or approximately 4 mm, or approximately 3.5 mm, or approximately 3 mm, or approximately 2.8 mm.

[0039] According to one example, the minimum width of the first slit 140 and the minimum width of the second slit 150 are equal to or less than the thickness of the first busbar 130. According to another example, the minimum width of the first slit 140 and the minimum width of the second slit 150 are not greater than 1.2 times, 1.5 times, or 2 times the thickness of the first busbar 130.

[0040] exist Figure 2AIn the example shown, the distal faces 141, 151 of the first slit 140 and the second slit 150 extend parallel to the longitudinal axis S of the first generatrix 130. The distal faces 141, 151 may be arranged perpendicular to the longitudinal axes S1, S2 of the first slit 140 and the second slit 150 and / or perpendicular to the lateral faces 142, 152 of the first slit 140 and the second slit 150. The longitudinal axes S1, S2 of the first slit 140 and the second slit 150 and / or the lateral faces 142, 152 may be perpendicular to the longitudinal axis S of the first generatrix 130. Furthermore, the longitudinal axis S may be the axis of symmetry of the first generatrix 130.

[0041] exist Figure 2B In the example shown, the distal faces 141, 151 of the first slit 140 and the second slit 150 are arranged at a non-zero angle relative to the longitudinal axis S of the first generatrix 130. The non-zero angle can be, for example, in the range of about 30° to about 60°. The lower limit of this range can also be about 35°, or about 40°, or about 45°, and the upper limit can also be about 55°, or about 50°.

[0042] In addition, Figure 2B In the example shown, the first slit 140 and the second slit 150 may be offset relative to each other along the longitudinal axis S of the first generatrix 130 (in other words, the longitudinal axes S1 and S2 of the first slit 140 and the second slit 150 do not coincide). The first slit 140 and the second slit 150 may, for example, be offset relative to each other along the axis S by about 0.5 mm or more, or about 1 mm or more, or about 1.5 mm or more, or about 1.7 mm or more.

[0043] According to one example, when viewed from above the first side 131 of the first busbar 130, the profile of the distal end 140' of the first slit 140 and / or the profile of the distal end 150' of the second slit 150 have a radius of curvature not greater than 0.7 mm. The radius of curvature may also be not greater than 0.6 mm or not greater than 0.5 mm.

[0044] According to one example, bus 130 is not part of semiconductor module 100, but rather bus 130 is configured to be connected to the semiconductor module. In this case, the semiconductor module may include power tabs configured as external power contacts of the semiconductor module, wherein bus 130 may be connected (e.g., threaded or soldered) to said power tabs. A current sensor (e.g., a differential Hall sensor) may be arranged above the contraction 160 in bus 130 and may be used to measure the current flowing through the power tabs of the semiconductor module and bus 130. In other words, in this example, bus 130 may be located outside the semiconductor module.

[0045] Figure 3A cross-sectional view of another semiconductor module 300, which may be similar to or the same as semiconductor module 100, is shown. Figure 3 The diagram illustrates the possible locations of the first slit 140 and the second slit 150 in the first busbar 130. However, the first slit 140 and the second slit 150 can also be arranged at different locations in the first busbar 130, for example in... Figure 3 The center is further to the left (e.g., outside the enclosure 120) or further to the right.

[0046] According to one example, the semiconductor module 300 (or the enclosure 120 of the semiconductor module 300) includes a receiver 310 configured to receive a first differential Hall sensor. The receiver 310 may be arranged above a first side 131 of the first busbar 130, such that the first differential Hall sensor placed in the receiver 310 is vertically arranged above a contraction 160 located between a first slit 140 and a second slit 150. The first differential Hall sensor may, for example, be configured as a sensor module including a differential Hall sensor element, an encapsulation material encapsulating the differential Hall sensor element, and external contacts configured to connect to the semiconductor module 300 and / or external devices (e.g., to a control or driver board).

[0047] Semiconductor module 300 may include substrate 320. Semiconductor die 110 and possibly a first bus 130 may be disposed on the upper side of substrate 320 and electrically connected to each other via substrate 320. The first bus 130 may, for example, be bent downwards such that an inner portion coupled to substrate 320 is disposed in a lower plane, while an outer portion is disposed in an upper plane different from the lower plane. However, the first bus 130 may also be omitted. Figure 3 The bend shown.

[0048] The first bus 130 can be configured, for example, as an external power contact of the semiconductor module 300, such as a direct current (DC) power contact or an alternating current (AC) power contact. As described above, the semiconductor module 300 may include converter circuitry or inverter circuitry, and the first bus 130 may be an input or output terminal of said circuitry. For the external driver circuitry to correctly control (drive) the power circuitry of the semiconductor module 300, it may be necessary to provide the driver circuitry with a measurement of the current flowing through the first bus 130. This current measurement can be provided by a differential Hall sensor arranged within the receiving section 310. The first bus 130 includes a constriction section 160 to increase the magnetic field strength at the sensor location.

[0049] To accurately drive / control the circuitry of the semiconductor module 300, the differential Hall sensor arranged within the receiving section 310 may need to meet stringent requirements, such as linear response and (virtually) no phase error in the frequency range of 10 Hz to 2 kHz. However, these characteristics can be negatively affected by the presence of slits in the busbar. The first slit 140 and the second slit 150 are configured to reduce or even eliminate the negative impact. In particular, by making the distal ends 140', 150' wider than the rest of the slits 140, 150, a sufficiently long contraction 160 can be provided while keeping the slits 140, 150 as narrow as possible. Extending the distal faces 141, 151 parallel to each other (instead of being, for example, rounded) and / or reducing the radius of curvature of the profiles of the distal ends 140', 150' further positively impacts the measurement accuracy of the sensor positioned above the contraction 160.

[0050] Figure 4A and Figure 4B Details of the first busbar 130, according to other examples, are shown. Figure 4A and Figure 4B In the example shown, the first slit 140 and the second slit 150 do not include distal ends that are wider than the remainders of the respective slits 140, 150. However, the distal ends 141, 151 of the first slit 140 and the second slit 150 still extend parallel to each other. Figure 4A In the example shown, the distal faces 141 and 151 extend parallel to the longitudinal axis S of the first generatrix 130. Figure 4B In the example shown, the distal faces 141 and 151 are arranged at a non-zero angle relative to axis S, as further described above. According to Figure 4A and Figure 4B The first slit 140 and the second slit 150 of the example can be as wide as, for example, as further disclosed above with respect to the distal ends 140', 150'.

[0051] and Figure 2A and Figure 2B The example shown is similar, according to Figure 4A and Figure 4B The first bus 130 in the example shown can help improve sensor accuracy as described above. However, according to Figure 4A and Figure 4B The example shown has a first slit 140 and a second slit 150 on the first busbar 130 that are generally larger than those on the second busbar 130. Figure 2A and Figure 2B The example shown is wider. Therefore, the heat dissipation path for dissipating heat generated by the semiconductor module 100 or 300 during operation via the first bus 130 can be wider than that according to... Figure 2A and Figure 2BThe heat dissipation path of the first bus 130 in the example shown has a higher thermal resistance.

[0052] Figure 5 A perspective view of another semiconductor module 500 is shown, which may be similar to or the same as semiconductor modules 100 and 300, except for the differences described below.

[0053] Semiconductor module 500 includes all the components disclosed with respect to semiconductor modules 100 and 300, and semiconductor module 500 further includes a second busbar 510 and a third busbar 520. The second busbar 510 includes a third slit 512 and a fourth slit 514, the third slit 512 and the fourth slit 514 being arranged such that the second busbar 510 has a contraction 516 between the distal ends of the third slit 512 and the fourth slit 514. The third busbar 520 includes a fifth slit 522 and a sixth slit 524, the fifth slit 522 and the sixth slit 524 being arranged such that the third busbar 520 has a contraction 526 between the distal ends of the fifth slit 522 and the sixth slit 524. The semiconductor module 500 can be configured such that a second differential Hall sensor can be vertically arranged above the contraction 516 of the second busbar 510 to measure the current flowing through the second busbar 510, and a third differential Hall sensor can be vertically arranged above the contraction 526 of the third busbar 520 to measure the current flowing through the third busbar 520. The second busbar 510 and the third busbar 520, particularly the slits of the second busbar 510 and the third busbar 520, can have the same shape, the same relative arrangement, and the same dimensions as disclosed with respect to the first busbar 130.

[0054] exist Figure 5 The portion of the encapsulation body 120 above the first busbar 130 is shown in the diagram to illustrate the receiving portion 310. The portion of the encapsulation body 120 above the second busbar 510 and third busbar 520 is omitted to show the first slits 512, 522 and the second slits 514, 524 of the second busbar 510 and third busbar 520.

[0055] The semiconductor module 500 may include an electrical isolation layer disposed between each of the differential Hall sensors and the first bus 130, the second bus 510, and the third bus 520, and configured to isolate the sensors from the buses. The electrical isolation layer may, for example, comprise a molded compound or a foil.

[0056] According to one example, the first bus 130, the second bus 510, and the third bus 520 are configured as phase current contacts of the semiconductor module 500. For example, the first bus 130, the second bus 510, and the third bus 520 can be configured as three-phase AC contacts of the semiconductor module 500. The semiconductor module 500 may include additional power contacts 530, which may be configured, for example, as DC+ and DC- contacts, and may be arranged, for example, on a lateral side of the semiconductor module 500 opposite to the lateral side having the first bus 130, the second bus 510, and the third bus 520. Figure 5 In the example shown, the additional power contact 530 does not include a slit like the first bus 130, second bus 510, and third bus 520. However, one or more or all of the additional power contacts 530 also include the slit and constriction described above with respect to the first bus 130. In other words, both the bus configured as an AC contact and the bus configured as a DC contact can include the slit and constriction described herein. The semiconductor module 500 may also include a control contact 540, which may be exposed, for example, from a first side 121 of the encapsulation 120. Figure 5 In the example shown, the control contact 540 includes pins, such as press-fit pins.

[0057] Figure 6 This is a flowchart of an exemplary method 600 for manufacturing a semiconductor module. Method 600 can be used, for example, to manufacture semiconductor modules 100 to 500.

[0058] Method 600 includes: providing at least one power semiconductor die at 601; at 602, method 600 includes encapsulating the power semiconductor die with an encapsulating body; at 603, method 600 includes providing a first busbar and electrically connecting the first busbar to the power semiconductor die, the first busbar being exposed from the encapsulating body, wherein the first busbar includes a first side, an opposite second side, and a lateral side connecting the first side and the second side, wherein the first busbar includes a first slit and a second slit, and when viewed from above the first side, the first slit and the second slit are arranged such that the first busbar has a contraction between the distal end of the first slit and the distal end of the second slit, wherein the distal end faces of the first slit and the second slit are arranged opposite to each other and extend along parallel straight lines, and wherein, when viewed from above the first side of the first busbar, the width of the distal end of the first slit and the width of the distal end of the second slit are wider than the remainder of the respective slits, the width being measured perpendicular to the longitudinal axis of the respective slits.

[0059] Figure 7A schematic arrangement of an electronic system is shown, comprising a busbar 130 according to any of the aforementioned busbars. A differential Hall sensor 170 is arranged above a first side 131 of the first busbar 130, vertically positioned above a contraction (not shown), wherein a ferrite plate 180, vertically aligned with the differential Hall sensor 170, is arranged above a second side of the busbar 130 and / or above the differential Hall sensor 170. The ferrite plate 180 above the differential Hall sensor 170 may be mounted on the opposite side of the PCB 190 to the differential Hall sensor 170. The ferrite plate 180 overlaps with the differential Hall sensor in the vertical direction, preferably covering the outer periphery of the differential Hall sensor. Preferably, the ferrite plate is only slightly larger than the differential Hall sensor. This small size factor avoids strong hysteresis effects within the ferrite plate. Optionally, the Hall sensor may be separated from the busbar by an isolation layer 195. The ferrite plate may be placed on one or both sides of the differential Hall sensor. In all cases, ferrite plates enhance the magnetic field and may help improve the signal-to-noise ratio.

[0060] Example

[0061] The following examples further illustrate semiconductor modules, buses used in semiconductor modules, and methods for manufacturing semiconductor modules.

[0062] Example 1 is a semiconductor module comprising: at least one power semiconductor die; an encapsulation body encapsulating the power semiconductor die; and a first busbar electrically connected to the power semiconductor die and exposed from the encapsulation body, the first busbar including a first side, an opposite second side, and a lateral side connecting the first side and the second side, wherein the first busbar includes a first slit and a second slit, the first slit and the second slit being arranged such that, when viewed from above the first side, the first busbar has a contraction between the distal end of the first slit and the distal end of the second slit, wherein the distal end faces of the first slit and the second slit are arranged opposite to each other and extend along parallel straight lines, and wherein, when viewed from above the first side of the first busbar, the width of the distal end of the first slit and the width of the distal end of the second slit are wider than the remainder of the respective slits, the width being measured perpendicular to the longitudinal axis of the respective slit.

[0063] Example 2 is a semiconductor module of Example 1, wherein the first slit further includes two lateral sides that are opposite to each other, extend parallel to each other, and extend from the first of the lateral sides of the first generatrix to the distal end face of the first slit, and wherein the second slit further includes two lateral sides that are opposite to each other, extend parallel to each other, and extend from the second of the lateral sides of the first generatrix (which is opposite to the first of the lateral sides of the first generatrix) to the distal end face of the second slit.

[0064] Example 3 is a semiconductor module of Example 1 or 2, the semiconductor module further comprising: a receiving section for a first differential Hall sensor, which is arranged above a first side of the first busbar and vertically positioned above the contraction section.

[0065] Example 4 is a semiconductor module of Example 3, wherein the distal end of each slit is at least 1.5 times wider than the rest of the corresponding slit.

[0066] Example 5 is a semiconductor module of any of the preceding examples, wherein the distal end face of the first slit and the distal end face of the second slit extend parallel to the longitudinal axis of the first generatrix.

[0067] Example 6 is a semiconductor module of any one of Examples 1 to 4, wherein the distal end face of the first slit and the distal end face of the second slit are arranged at an angle relative to the longitudinal axis of the first generatrix, the angle being in the range of 40° to 50°.

[0068] Example 7 is a semiconductor module of any of the preceding examples, wherein, when viewed from above the first side of the first busbar, the profile of the distal end of the first slit and the profile of the distal end of the second slit both have a radius of curvature of no more than 0.5 mm.

[0069] Example 8 is a semiconductor module of any of the preceding examples, wherein the first slit and the second slit are mirror symmetrical.

[0070] Example 9 is a semiconductor module of any of the preceding examples, wherein the minimum width of the first slit and the minimum width of the second slit are not greater than 1.2 times the thickness of the first busbar, the width being measured parallel to a first side of the first busbar, and the thickness being measured between the first and second sides of the first busbar.

[0071] Example 10 is a semiconductor module of any of the foregoing examples, the semiconductor module further comprising: a second busbar including a third slit and a fourth slit, the third slit and the fourth slit being arranged such that the second busbar has a contraction between the distal end of the third slit and the distal end of the fourth slit; and a third busbar including a fifth slit and a sixth slit, the fifth slit and the sixth slit being arranged such that the third busbar has a contraction between the distal end of the fifth slit and the distal end of the sixth slit.

[0072] Example 11 is a busbar configured to connect to a semiconductor module, the busbar including: a first side, an opposite second side, and a lateral side connecting the first and second sides; and a first slit and a second slit, which, when viewed from above the first side, are arranged such that the busbar has a contraction between the distal ends of the first slit and the second slit, wherein the distal faces of the first slit and the second slit are arranged opposite to each other and extend along parallel straight lines, and wherein, when viewed from above the first side of the busbar, the width of the distal ends of the first slit and the width of the distal ends of the second slit are wider than the remainder of the respective slits, the width being measured perpendicular to the longitudinal axis of the respective slit.

[0073] Example 12 is the busbar of Example 11, wherein the first slit further includes two lateral sides that are opposite to each other, extend parallel to each other, and extend from the first of the lateral sides of the busbar to the distal face of the first slit, and wherein the second slit further includes two lateral sides that are opposite to each other, extend parallel to each other, and extend from the second of the lateral sides of the busbar (which is opposite to the first of the lateral sides of the busbar) to the distal face of the second slit.

[0074] Example 13 is a busbar of Example 11 or 12, wherein the busbar is a sheet metal component.

[0075] Example 14 is the busbar of any one of Examples 11 to 13, wherein the distal end of each slit is at least 1.5 times wider than the rest of the corresponding slit.

[0076] Example 15 is an electronic system comprising: a busbar of any one of Examples 11 to 14; a differential Hall sensor disposed on a first side of the first busbar and vertically above the contraction, wherein a ferrite plate vertically aligned with the differential Hall sensor is disposed on a second side of the busbar and / or on the differential Hall sensor.

[0077] Example 16 is a method for manufacturing a semiconductor module, the method comprising: providing at least one power semiconductor die; encapsulating the power semiconductor die with an encapsulation body; providing a first busbar and electrically connecting the first busbar to the power semiconductor die, the first busbar being exposed from the encapsulation body, wherein the first busbar includes a first side, an opposite second side, and a lateral side connecting the first side and the second side, wherein the first busbar includes a first slit and a second slit, the first slit and the second slit being arranged such that, when viewed from above the first side, the first busbar has a contraction between a distal end of the first slit and a distal end of the second slit, wherein the distal end faces of the first slit and the second slit are arranged opposite to each other and extend along parallel straight lines, and wherein, when viewed from above the first side of the first busbar, the width of the distal end of the first slit and the width of the distal end of the second slit are wider than the remainder of the respective slits, the width being measured perpendicular to the longitudinal axis of the respective slits.

[0078] Example 17 is a method of Example 16, wherein providing the first busbar includes using a stamping process to manufacture the first slit and the second slit.

[0079] Example 18 is a method of Example 16 or 17, the method further comprising: distributing an electrical isolation layer between a first differential Hall sensor and a first side of a first busbar, the electrical isolation layer comprising a molded compound or foil.

[0080] Example 19 is a method of any of Examples 16 to 18, wherein the distal face of the first slit and the distal face of the second slit extend parallel to the longitudinal axis of the first generatrix.

[0081] Example 20 is a method of any one of Examples 17 to 18, wherein the distal faces of the first slit and the second slit are arranged at an angle relative to the longitudinal axis of the first generatrix, said angle being in the range of 40° to 50°.

[0082] Example 21 is a method of any one of Examples 16 to 20, wherein the minimum width of the first slit and the minimum width of the second slit are not greater than 1.2 times the thickness of the first busbar, the width being measured parallel to a first side of the first busbar, and the thickness being measured between the first and second sides of the first busbar.

[0083] Although specific examples have been shown and described herein, those skilled in the art will understand that various alternatives and / or equivalent embodiments can be used instead of the specific examples shown and described without departing from the scope of the invention. This application is intended to cover any modifications or variations of the specific examples discussed herein. Therefore, the invention is intended to be limited only by the claims and their equivalents.

[0084] It should be noted that the methods and apparatuses, including the preferred embodiments outlined herein, can be used alone or in combination with other methods and apparatuses disclosed herein. Furthermore, features outlined in the context of the apparatus also apply to the corresponding methods, and vice versa. Moreover, all aspects of the methods and apparatuses outlined herein can be combined arbitrarily. In particular, the features of the claims can be combined with each other in any manner.

[0085] It should be noted that the specification and accompanying drawings only illustrate the principles of the proposed method and system. Those skilled in the art will be able to implement various arrangements, which, although not explicitly described or shown herein, embody the principles of the invention and are included within its spirit and scope. Furthermore, all examples and embodiments outlined herein are primarily and explicitly for illustrative purposes only, to aid the reader in understanding the principles of the proposed method and system. Moreover, all statements herein providing the principles, aspects, and embodiments of the invention and their specific examples are intended to cover their equivalents.

Claims

1. A semiconductor module (100), comprising: At least one power semiconductor die (110), Encapsulation body (120) encapsulates a power semiconductor die (110). A first busbar (130), electrically connected to a power semiconductor die (110) and exposed from the encapsulation (120), includes a first side (131), an opposite second side (132), and a lateral side (133) connecting the first side (131) and the second side (132). The first busbar (130) includes a first slit (140) and a second slit (150). When viewed from above the first side (131), the first slit (140) and the second slit (150) are arranged such that the first busbar (130) has a contraction (160) between the distal end (140') of the first slit (140) and the distal end (150') of the second slit (150). The distal face (141) of the first slit (140) and the distal face (151) of the second slit (150) are arranged opposite to each other and extend along parallel straight lines, and When viewed from above the first side (131) of the first busbar (130), the width of the distal end (140') of the first slit (140) and the width of the distal end (150') of the second slit (150) are wider than the rest of the respective slits, the width being measured perpendicular to the longitudinal axis of the respective slit.

2. The semiconductor module (100) according to claim 1, wherein, The first slit (140) further includes two lateral sides (142) that are opposite to each other, extend parallel to each other, and extend from the first of the lateral sides (133) of the first generatrix (130) to the distal end face (141) of the first slit (140); the second slit (150) further includes two lateral sides (152) that are opposite to each other, extend parallel to each other, and extend from the second of the lateral sides (133) of the first generatrix (130), which is opposite to the first of the lateral sides (133) of the first generatrix (130), to the distal end face (151) of the second slit (150).

3. The semiconductor module (100) according to claim 1 or 2, wherein the semiconductor module (100) further comprises: The receiving part (310) for the first differential Hall sensor is arranged above the first side (131) of the first busbar (130) and vertically above the contraction part (160).

4. The semiconductor module (100) according to claim 3, wherein, The distal end (140', 150') of each slit is at least 1.5 times wider than the rest of the corresponding slit.

5. The semiconductor module (100) according to any one of the preceding claims, wherein, The distal face (141) of the first slit (140) and the distal face (151) of the second slit (150) extend parallel to the longitudinal axis of the first generatrix (130).

6. The semiconductor module (100) according to any one of claims 1 to 4, wherein, The distal end face (141) of the first slit (140) and the distal end face (151) of the second slit (150) are arranged at an angle relative to the longitudinal axis of the first generatrix (130), the angle being in the range of 40° to 50°.

7. The semiconductor module (100) according to any one of the preceding claims, wherein, When viewed from above the first side (131) of the first busbar (130), the profiles of the distal end (140') of the first slit (140) and the distal end (150') of the second slit (150) both have a radius of curvature of no more than 0.5 mm.

8. The semiconductor module (100) according to any one of the preceding claims, wherein, The first slit (140) and the second slit (150) are mirror symmetrical.

9. The semiconductor module (100) according to any one of the preceding claims, wherein, The minimum width of the first slit (140) and the minimum width of the second slit (150) are not greater than 1.2 times the thickness of the first busbar (130), the width being measured parallel to the first side (131) of the first busbar (130), and the thickness being measured between the first side (131) and the second side (132) of the first busbar (130).

10. The semiconductor module (100) according to any one of the preceding claims, wherein the semiconductor module (100) further comprises: A second busbar (510) comprising a third slit (512) and a fourth slit (514), the third slit (512) and the fourth slit (514) being arranged such that the second busbar (510) has a contraction (516) between the distal end of the third slit (512) and the distal end of the fourth slit (514), and The third busbar (520) includes a fifth slit (522) and a sixth slit (524), the fifth slit (522) and the sixth slit (524) being arranged such that the third busbar (520) has a contraction (526) between the distal end of the fifth slit (522) and the distal end of the sixth slit (524).

11. A bus (130) configured to connect to a semiconductor module, the bus (130) comprising: The first side (131), the opposite second side (132), and the lateral side (133) connecting the first side (131) and the second side (132), and When viewed from above the first side (131), the first slit (140) and the second slit (150) are arranged such that the busbar (130) has a contraction (160) between the distal end (140') of the first slit (140) and the distal end (150') of the second slit (150). The distal end face (141) of the first slit (140) and the distal end face (151) of the second slit (150) are arranged opposite to each other and extend along parallel straight lines. When viewed from above the first side (131) of the busbar (130), the width of the distal end (140') of the first slit (140) and the width of the distal end (150') of the second slit (150) are wider than the rest of the respective slits, the width being measured perpendicular to the longitudinal axis of the respective slit.

12. The busbar (130) according to claim 11, wherein, The first slit (140) further includes two lateral sides (142) that are opposite to each other, extend parallel to each other, and extend from the first of the lateral sides (133) of the generatrix (130) to the distal end face (141) of the first slit (140); the second slit (150) further includes two lateral sides (152) that are opposite to each other, extend parallel to each other, and extend from the second of the lateral sides (133) of the generatrix (130), which is opposite to the first of the lateral sides (133) of the generatrix (130), to the distal end face (151) of the second slit (150).

13. The busbar (130) according to claim 11 or 12, wherein, The busbar (130) is a metal sheet component.

14. The busbar (130) according to any one of claims 11 to 13, wherein, The distal end (140', 150') of each slit (140, 150) is at least 1.5 times wider than the rest of the corresponding slit (140, 150).

15. An electronic system, the electronic system comprising: According to any one of claims 11 to 14, the busbar (130) is arranged above a first side (131) of the first busbar (130) and vertically above the contraction portion (160), wherein a ferrite plate (180) vertically aligned with the differential Hall sensor (170) is arranged above a second side of the busbar (130) and / or above the differential Hall sensor (170).

16. A method (600) for manufacturing a semiconductor module, the method (600) comprising: Provide (601) at least one power semiconductor die, The power semiconductor die described in (602) is encapsulated with an encapsulating body, and (603) A first busbar is provided and electrically connected to the power semiconductor die, the first busbar being exposed from the encapsulation. The first busbar includes a first side, an opposite second side, and a lateral side connecting the first side and the second side. The first busbar includes a first slit and a second slit, which, when viewed from above on the first side, are arranged such that the first busbar has a contraction between the distal end of the first slit and the distal end of the second slit. The distal faces of the first slit and the distal faces of the second slit are arranged opposite to each other and extend along parallel straight lines. When viewed from above the first side of the first busbar, the width of the distal end of the first slit and the width of the distal end of the second slit are wider than the rest of the corresponding slits, the width being measured perpendicular to the longitudinal axis of the corresponding slit.

17. The method (600) according to claim 16, wherein, Providing (603) the first busbar includes using a stamping process to manufacture the first slit and the second slit.

18. The method (600) according to claim 16 or 17, wherein the method (600) further comprises: An electrical isolation layer is disposed between the first differential Hall sensor and a first side of the first busbar, the electrical isolation layer comprising a molded compound or foil.

19. The method (600) according to any one of claims 16 to 18, wherein, The distal faces of the first slit and the second slit extend parallel to the longitudinal axis of the first generatrix.

20. The method (600) according to any one of claims 16 to 18, wherein, The distal faces of the first slit and the second slit are arranged at an angle relative to the longitudinal axis of the first generatrix, the angle being in the range of 40° to 50°.

21. The method (600) according to any one of claims 16 to 20, wherein, The minimum width of the first slit and the minimum width of the second slit are not greater than 1.2 times the thickness of the first busbar. The width is measured parallel to the first side of the first busbar, and the thickness is measured between the first side and the second side of the first busbar.

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