Mounting structure of parallel MOS (Metal Oxide Semiconductor) tubes

Abstract

The invention provides a mounting structure of parallel MOS (metal oxide semiconductor) tubes, which belongs to the technical field of synchronous rectification high-frequency switching power supplies and comprises at least one MOS tube. The at least one trigger board is provided with a welding position corresponding to the grid electrode of the MOS tube; the at least two busbars are respectively used for connecting the source electrode and the drain electrode of the MOS tube; wherein the MOS tube, the trigger plate and the busbar are combined into a planar whole body in a welding manner to form an MOS tube rectification unit capable of parallel output, so that parallel rectification output of high power of the small packaged MOS tube is realized, the installation and connection structure of the switching power supply rectification is optimized, the boundary dimension of the equipment is further reduced, and the cost is reduced. And the rectification modularization of the synchronous rectification high-frequency switching power supply is realized.

Description

Technical Field

[0001] This invention belongs to the field of synchronous rectification high-frequency switching power supply technology, specifically a mounting structure for parallel MOSFETs. Background Technology

[0002] With the continuous progress and development of modern industrial technology, high-frequency switching power supplies are increasingly widely used in our daily lives, especially in high-power output applications in industrial production such as chemical, electrolysis, and electroplating oxidation, where they play a crucial role. In traditional high-power output switching power supplies, the rectifier section mostly uses Schottky or fast recovery diodes, employing a single mounting method to accumulate high power output. The mounting structure is fixed and uniform, making parallel output inflexible. Traditional rectifier diodes are large, have a single mounting method, low conductivity, high loss, high heat generation, and low overload capacity. In high-power output applications of high-frequency switching power supplies, they are gradually becoming inadequate to meet production demands, hindering the advancement of equipment installation technology. When higher power output is required, the only way to meet the rectifier output installation requirements is to expand the equipment size, significantly increasing production costs and the requirements for the equipment's working and installation space. The more power output is accumulated, the greater the power loss of the rectified output, and the higher the maintenance costs become. Meanwhile, in actual use, poor heat dissipation often leads to rectifier tube burnout, rendering the entire device unusable and requiring complete replacement for repair, significantly increasing production and maintenance costs. Traditional rectifier tubes generate substantial heat during operation; if not dissipated promptly, this affects stability. Therefore, heat dissipation during installation is paramount, severely impacting the layout and connection of other components. The more connections during power output, the greater the losses. Overly dispersed component placement and disordered connections result in low overall output power efficiency, difficulty in expansion, poor heat dissipation, and unstable equipment operation, greatly increasing production and maintenance costs. Therefore, how to change the traditional rectification mode of high-power switching power supplies has become a crucial question and a pressing technical challenge. Summary of the Invention

[0003] To address the shortcomings of the prior art, the technical problem to be solved by the embodiments of the present invention is to provide a mounting structure for parallel MOSFETs.

[0004] To solve the above-mentioned technical problems, the present invention provides the following technical solution: a mounting structure for parallel MOSFETs, comprising: At least one MOSFET; At least one trigger plate has solder pads corresponding to the gate of the MOS transistor; At least two buses are used to connect the source and drain of the MOS transistor, respectively. The MOS transistor, the trigger board, and the busbar are assembled into a planar unit by welding to form a MOS transistor rectifier unit that can be connected in parallel for output.

[0005] As a further improvement: the bus includes a middle bus and two side buses, the middle bus is used to solder the drain of the MOS transistor, and the two side buses are used to solder the source of the MOS transistor.

[0006] As a further improvement: the trigger plate is disposed between the middle bus and the two side buses, and is fixed by welding the gate of the MOS transistor.

[0007] As a further improvement, the mating edges of the busbar and the trigger plate are serrated to achieve a seamless connection.

[0008] As a further improvement: the trigger board is a PCB board, which uses SMT surface mount technology to install electronic components and is equipped with an external signal input terminal.

[0009] As a further improvement: the MOS transistors are soldered on the bus in a single row, double row, or multiple rows.

[0010] As a further improvement: the MOS transistor is soldered on the bus on one or both sides.

[0011] As a further improvement: the mounting structure can be used alone or in combination to form a modular rectifier unit.

[0012] Compared with the prior art, the beneficial effects of the present invention are: by utilizing the lead-out pins and external structure of the MOSFET, the present invention cleverly welds and fixes the busbars on both sides of the busbar to the source (S) terminal of the MOSFET, the trigger plate to the gate (G) terminal of the MOSFET, and the drain (D) terminal of the MOSFET to the busbar, and finally assembles and splices them to form a flat, easy-to-install MOSFET rectifier board that can output high power. This technology enables high-power output from parallel rectification of small-package MOSFETs, optimizes the installation and connection structure of switching power supply rectification, further reduces the size of the equipment, realizes modularization of synchronous rectification high-frequency switching power supply rectification, and better realizes the output of multiple sets of parallel power. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the overall structure of a parallel MOSFET mounting structure; Figure 2This is an exploded view of a parallel MOSFET mounting structure. Figure 3 Component distribution of a parallel MOSFET mounting structure Figure 1 ; Figure 4 Component distribution of a parallel MOSFET mounting structure Figure 2 ; Figure 5 This is a component exploded view of a parallel MOSFET mounting structure; Figure 6 This is a diagram showing the assembly of a busbar and trigger board for a parallel MOSFET mounting structure. Figure 7 A side view of a busbar with a parallel MOSFET mounting structure, showing a MOSFET mounted on one side. Figure 8 A side view of a busbar double-sided soldering MOSFET mounting structure for a parallel MOSFET mounting configuration; Figure 9 Side view of a bus double-layer stacked mounting structure for a parallel MOSFET mounting structure; In the diagram: 1. Busbars on both sides; 11. Mounting hole; 2. Trigger board; 21. Signal input terminal; 22. Soldering position; 23. Voltage regulator resistor; 3. MOSFET; 4. Middle busbar; 41. Reserved hole. Detailed Implementation

[0014] The technical solution of this application will be further described in detail below with reference to specific embodiments.

[0015] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0016] Please see Figures 1 to 9 In one embodiment, a mounting structure for a parallel MOSFET includes: At least one MOSFET 3; At least one trigger plate 2 is provided with a solder pad 22 corresponding to the gate of the MOS transistor 3; At least two buses are used to connect the source and drain of the MOS transistor 3, respectively; The MOS transistor 3, the trigger plate 2, and the busbar are assembled into a planar whole by welding to form a MOS transistor 3 rectifier unit that can be connected in parallel for output.

[0017] In this embodiment, the MOS transistor 3 of the present invention is a small package MOS transistor 3 used as the rectifier output, which has a small size, large overcurrent carrying capacity, and is simple and convenient to install and solder.

[0018] MOSFET 3 consists of a drain (D), gate (G), and source (S). A certain number of MOSFETs 3 are neatly arranged and soldered onto both sides of the central bus 4. Alternatively, they can be arranged according to... Figure 4 As shown, the D-terminal of MOSFET 3 is soldered to the intermediate bus 4. The D-terminal of MOSFET 3 is connected to the intermediate bus 4 and directly soldered for fixation. The front end of MOSFET 3 protrudes slightly so that the G-terminal of MOSFET 3 extends out and matches the reserved soldering position 22 on the trigger plate 2 for soldering connection. The trigger plate 2 is flat on one side and serrated on the other side. It is placed below the front end of MOSFET 3 and flush with the intermediate bus 4. The trigger plate 2 has reserved soldering points for the G-terminal of MOSFET 3. Soldering the G-terminal of MOSFET 3 onto it will fix the trigger plate 2. Each side of the trigger plate 2 has a reserved terminal for external signal input, namely the signal input terminal 21, to facilitate the introduction of external drive signals.

[0019] The trigger plate 2 is also equipped with a voltage regulator 23, the intermediate busbar 4 is provided with a reserved hole 41, and the two side busbars 1 are provided with mounting holes 11 to facilitate installation and fixation with other cooling components.

[0020] Busbar 1 on both sides and busbar 4 in the middle serve as the collection point for the output current after rectification by MOSFET 3. In actual use, different materials, thicknesses, surface treatment processes and processing shapes of the busbars can be selected according to different requirements. The busbar and trigger board 2 are fixed to the busbar by soldering MOSFETs 3, forming a planar assembly with MOSFETs 3 connected in parallel (e.g., Figure 1 As shown, high-power output of MOSFET 3 is achieved through the ingenious installation, connection, and fixing of MOSFET 3, trigger board 2, and bus. Parallel rectification output of MOSFET 3 is realized.

[0021] like Figure 2 , Figure 3 and Figure 4 As shown, in another embodiment of the present invention, the bus includes a middle bus 4 and two side buses 1. The middle bus 4 is used to weld the drain of the MOS transistor 3, and the two side buses 1 are used to weld the source of the MOS transistor 3.

[0022] In this embodiment, the busbar is made of tin-plated copper plate formed by one-time stamping, which has the characteristics of strong power carrying capacity, good conductivity and heat dissipation, and easy processing and forming. The busbar is divided into 3 parts: one in the middle and one on each side. The two side busbars 1 are isolated and insulated from the middle busbar 4 by the trigger plate 2. The base plate of the MOSFET 3 is directly and neatly soldered to the middle busbar. The output terminal of the MOSFET 3 is soldered to the left and right side busbars. The trigger electrode of the MOSFET 3 is soldered to the trigger plate 2 between the busbars, forming a combined planar whole. The soldering position 22 of the MOSFET 3 can be adjusted according to different installation requirements.

[0023] like Figure 2 , Figure 3 and Figure 4 As shown, in another embodiment of the present invention, the trigger plate 2 is disposed between the middle bus 4 and the two side buses 1, and is fixed by welding the gate of the MOS transistor 3.

[0024] like Figure 2 As shown, in another embodiment of the present invention, the mating edge between the busbar and the trigger plate 2 is serrated to achieve a fitting connection.

[0025] In this embodiment, the two side busbars 1 are connected to the trigger plate 2. Both the two side busbars 1 and the trigger plate 2 have one side that is flat and the other side that is serrated. The serrated side of the two side busbars 1 fits perfectly with the serrated side of the trigger plate 2. The serrated protrusions of the two side busbars 1 are located just below the S-terminus of the MOS transistor 3, providing a soldering position 22. By soldering the S-terminus of the MOS transistor 3 to the two side busbars 1, these three components together form a flat plane (e.g., ...). Figure 6 (As shown). The two side buses 1 and the middle bus 4 provide current output for the source and drain of MOSFET 3, and also solder the source and drain of MOSFET 3 onto the two side buses 1 and the middle bus 4, complementing each other. The trigger plate 2 is sandwiched between the two side buses 1 and the middle bus 4, and is soldered to the welding position 22 on the trigger plate 2 via the gate of MOSFET 3, forming the rectifier output bus on one side. The other side can be obtained by following the same steps.

[0026] The two side busbars 1, trigger board 2, MOSFET 3, and middle busbar 4 are organically combined, with each component complementing the others, ultimately forming a flat, easy-to-install, and high-power MOSFET rectifier board (e.g., MOSFET 3 rectifier board). Figure 3 (As shown), or you can follow the above steps to press MOS transistor 3... Figure 4 The MOS transistor 3 is fixed by welding in position. The connection method and position arrangement between the MOS transistor 3 and the two side busbars 1 and the middle busbar 4 are not limited to this. Various installation and connection methods can be used to fix it according to different needs and connection methods.

[0027] In another embodiment of the present invention, the trigger board 2 is a PCB board, which uses SMT surface mount technology to mount electronic components and is provided with an external signal input terminal 21.

[0028] In this embodiment, the trigger board 2 is a PCB board with a pre-designed circuit. The corresponding components are soldered onto it using SMT surface mount technology, which reduces the area of ​​component arrangement, improves the precision of the board, and reduces unnecessary errors caused by human soldering.

[0029] The PCB board uses electronic components from well-known domestic and foreign manufacturers and is mounted using SMT surface mount technology to ensure the stable and reliable operation of the trigger board 2. Based on the packaging characteristics of the MOSFET 3 pins, the outer dimensions of the trigger board 2 are consistent with those of the busbars. It is placed between the two busbars and below the MOSFET 3, which not only isolates the two busbars but also provides a soldering and fixing position for the trigger electrode of the MOSFET 3. It no longer occupies external space and separate connecting wires, and is integrated with the busbars into an organic whole.

[0030] like Figure 7 , Figure 8 As shown, in another embodiment of the present invention, the MOS transistor 3 is soldered on the bus in a single row, double row or multiple rows, and the MOS transistor 3 is soldered on the bus on one side or both sides. The mounting structure can be used alone or in multiple stacked combinations to form a modular rectifier unit.

[0031] In this embodiment, the selection of MOSFET 3 is determined based on the power required in the actual application. One or more MOSFETs can be used to form a row for soldering. Single-sided or double-sided soldering can be performed on the two side busbars 1 and the middle busbar 4 (e.g., ...). Figure 7 , Figure 8 (As shown).

[0032] The MOSFET rectifier board, as a single unit, has a flat bottom surface. In practical applications, it can be used as a single board or multiple boards mounted and fixed on a single plane, or two boards can be stacked "back to back" (e.g., Figure 9 As shown, it is installed and fixed on a plane to achieve a larger rectified power output; By selecting a small-package MOSFET 3 for rectification, and combining it with the trigger board 2, busbar, etc., to form a parallel rectification unit group, one or more groups can be installed in parallel to achieve power output. This completely solves the problem that small-package power MOSFETs cannot output high power and high current, optimizes the structure between various systems of high-power power supply rectification, reduces the installation volume of rectification components, and improves the rectification efficiency of the power supply.

[0033] The specific connection implementation method of this invention is as follows: After the side busbars 1 and the middle busbar 4 are processed and shaped, they are placed on a platform as the mounting and fixing carrier for the rectifier board of MOS transistor 3. The middle busbar 4 is placed in the middle position. Through heating and welding technology, the MOS transistor 3 is neatly and orderly welded and fixed on the left and right sides of the middle busbar 4. The MOS transistor 3 is placed above the left and right sides of the middle busbar 4. The S and G terminals of the MOS transistor 3 protrude outward, forming a concave space. The flat end of the trigger plate 2 is aligned with the middle busbar 4 and placed in this space. The G terminal of the MOS transistor 3 is aligned with the reserved welding position 22 on the trigger plate 2. The trigger plate 2 can be fixed by adding solder. The serrated side of the side busbars 1 is aligned with the serrated side of the trigger plate 2. The protruding part of the side busbars 1 provides a welding and fixing position for the S terminal of the MOS transistor 3. Therefore, the side busbars 1 can be fixed by welding the S terminal of the MOS transistor 3 and the side busbars 1. The two side buses 1 and the middle bus 4 are isolated and insulated by the trigger plate 2 to prevent short circuit of the MOSFET 3. The mounting and connection method of the two side buses 1, the middle bus 4 and the MOSFET 3 can also be as follows: Figure 5 The positions are arranged and fixed.

[0034] The MOSFETs 3 are soldered onto the busbar in a specific, orderly arrangement using welding technology, forming a flat MOSFET rectifier board (e.g., Figure 3 (As shown). Compared to traditional MOSFET 3-rectification methods, this invention is smaller, easier to install and fix, has stronger overload capacity, better heat dissipation, and allows for flexible and convenient parallel capacity expansion. The MOSFET 3-rectification board can be a single board or a combination of multiple boards (e.g., Figure 9 As shown), this facilitates power output expansion. The MOSFETs 3 on the rectifier board can also be installed in different numbers on the side busbars 1 and the middle busbar 4, using single-row soldering, single-row double-sided soldering, or multi-row parallel soldering, depending on the power output size (e.g., Figure 7 , 8 (As shown).

[0035] To address the problems of existing traditional rectifier tube installation methods, this invention designs a parallel installation structure for 3 MOSFETs. This structure primarily uses small-package MOSFETs as rectifier tubes, which are then organically combined with the trigger board 2 and busbars in sequence to form a complete unit. One or more modules are assembled and connected for output. Its features include small size, convenient installation, simple connection, high power output, high efficiency and energy saving, stability, and good heat dissipation. This greatly optimizes the installation and connection methods between various power supply systems, reduces the overall size of the power supply, significantly reduces production costs, and improves the efficiency and stability of the power supply, fully ensuring the user's economy, reliability, and stability.

[0036] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention, and no reference numerals in the claims should be construed as limiting the scope of the claims.

[0037] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A mounting structure for parallel MOSFETs, characterized in that, include: At least one MOSFET; At least one trigger plate has solder pads corresponding to the gate of the MOS transistor; At least two buses are used to connect the source and drain of the MOS transistor, respectively. The MOS transistor, the trigger board, and the busbar are assembled into a planar unit by welding to form a MOS transistor rectifier unit that can be connected in parallel for output.

2. The mounting structure of a parallel MOSFET according to claim 1, characterized in that, The bus includes a middle bus and two side buses. The middle bus is used to solder the drain of the MOS transistor, and the two side buses are used to solder the source of the MOS transistor.

3. The mounting structure of a parallel MOSFET according to claim 2, characterized in that, The trigger board is disposed between the middle bus and the two side buses and is fixed by welding the gate of the MOS transistor.

4. The mounting structure of a parallel MOSFET according to claim 3, characterized in that, The mating edges of the busbar and the trigger plate are serrated to achieve a seamless connection.

5. The mounting structure of a parallel MOSFET according to claim 1, characterized in that, The trigger board is a PCB board, which uses SMT surface mount technology to install electronic components and has an external signal input terminal.

6. The mounting structure of a parallel MOSFET according to any one of claims 1-5, characterized in that, The MOS transistors are soldered onto the bus in a single row, double row, or multiple row configuration.

7. The mounting structure of a parallel MOSFET according to any one of claims 1-5, characterized in that, The MOS transistor is soldered on the bus on one or both sides.

8. The mounting structure of a parallel MOSFET according to any one of claims 1-5, characterized in that, The installation structure can be used alone or in combination to form a modular rectifier unit.

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