Intelligent ceramic pot heating adjusting system of semiconductor temperature sensor

Abstract

The invention relates to the technical field of intelligent temperature control, and discloses an intelligent ceramic pot heating adjusting system of a semiconductor temperature sensor. According to the system, target cooking parameters are acquired through the food material parameter acquisition module, the heating process monitoring module divides continuous monitoring time periods and acquires semiconductor temperature fluctuation data, the temperature control strategy execution module analyzes a feature set and dynamically adjusts power output, and meanwhile, the system has a residual temperature maintaining function. The overheating protection module comprehensively monitors temperature distribution, surface pressure and working current, and multi-dimensional safety protection is achieved. Compared with the prior art, the high-frequency response characteristic of the semiconductor sensor is utilized, the defect of traditional temperature control lag is overcome, millisecond-level power adjustment is achieved through time domain characteristic analysis, meanwhile, the abnormal state recognition rate is increased by combining multi-physical-quantity cooperative monitoring, and the service life of the device is prolonged on the basis that the cooking effect consistency is guaranteed.

Description

Technical Field

[0001] This invention relates to the field of intelligent temperature control technology, specifically to an intelligent ceramic pot heating and adjustment system using a semiconductor temperature sensor. Background Technology

[0002] Traditional ceramic pot heating systems mostly employ mechanical or simple electronic temperature control technologies, which suffer from problems such as lag in temperature response and insufficient adjustment precision. Mechanical bimetallic thermostats rely on the principle of physical deformation, and their temperature control error often exceeds ±10℃, making it difficult to adapt to the precise cooking needs of different ingredients. Although early electronic temperature control solutions incorporated thermocouple sensors, they were limited by the thermal inertia of the metal probes and could not capture real-time micro-temperature changes at the bottom of the pot, especially in scenarios with rapid temperature changes such as stir-frying and stewing, which can easily lead to localized overheating or uneven heating.

[0003] Existing smart cookware attempts to improve temperature control performance through infrared temperature measurement or integrated temperature chips. However, infrared technology is susceptible to steam interference, and conventional integrated sensors are mostly installed on the side wall of the pot, resulting in conduction delays in bottom temperature detection. Some high-end products use PID algorithms to adjust heating power, but they do not consider the thermal conductivity characteristics of ceramic materials and the nonlinear response relationship of semiconductor heaters, which still leads to significant temperature overshoot during adjustment. In addition, traditional overheat protection mechanisms only monitor a single temperature parameter, ignoring the risk of correlation between pot pressure changes and current fluctuations, resulting in a blind spot in response to abnormal conditions such as dry burning or sudden rises in oil temperature.

[0004] While semiconductor temperature sensors have mature applications in industrial fields, their direct application in kitchen environments faces three major technical obstacles: first, oil and moisture penetration during cooking degrades the sensor's signal-to-noise ratio; second, the difference in thermal expansion coefficients between ceramic pots and semiconductor materials causes fluctuations in contact thermal resistance; and third, frequent hot and cold cycles accelerate sensor aging. Existing solutions fail to effectively reconcile these three factors, limiting the practical application of semiconductor temperature control technology in cooking appliances. Summary of the Invention

[0005] The purpose of this invention is to provide an intelligent ceramic pot heating regulation system with a semiconductor temperature sensor to solve the problems mentioned in the background art.

[0006] To achieve the above objectives, the present invention provides an intelligent ceramic pot heating regulation system with a semiconductor temperature sensor, the system comprising:

[0007] The ingredient parameter acquisition module is used to obtain the target cooking parameters corresponding to the current cooking task of the ceramic pot;

[0008] The heating process monitoring module is used to receive the heating start command, control the semiconductor temperature sensor to perform the heating operation based on the target cooking parameters, divide the continuous monitoring period, collect the semiconductor temperature fluctuation data of the bottom of the ceramic pot in real time during each monitoring period, and output the semiconductor temperature fluctuation feature set corresponding to each monitoring period.

[0009] The temperature control strategy execution module is used to analyze the semiconductor temperature fluctuation feature set to generate semiconductor temperature regulation requirement parameters, dynamically adjust the power output of the semiconductor temperature sensor according to the parameters, and start the residual temperature maintenance program of the ceramic pot after the cooking task is completed.

[0010] The overheat protection module is used to continuously monitor the internal temperature distribution of the ceramic pot, the pressure value on the surface of the pot, and the semiconductor operating current intensity. When any monitored value exceeds the safe range, the protection mechanism is triggered.

[0011] Preferably, the target cooking parameters include a total cooking time setting, a reference temperature setting, a reference humidity setting, and a reference heat transfer rate setting.

[0012] Preferably, when the heating process monitoring module performs the heating operation, it sets multiple monitoring periods at equal intervals, and synchronously collects the highest operating temperature, lowest operating temperature, maximum heat conduction rate and minimum heat conduction rate of the semiconductor temperature sensor at the bottom of the ceramic pot during each monitoring period.

[0013] The differences between the highest and lowest operating temperatures and the differences between the maximum and minimum thermal conductivity rates are calculated for each monitoring period to form a temperature fluctuation amplitude dataset and a thermal conductivity fluctuation amplitude dataset.

[0014] Preferably, when the heating process monitoring module performs analysis on each monitoring period, it combines the reference temperature setpoint and the temperature fluctuation amplitude dataset to calculate the temperature stability index of the semiconductor temperature sensor in each monitoring period.

[0015] By combining the aforementioned baseline thermal conduction rate setpoint with the thermal conduction fluctuation amplitude dataset, the thermal conduction stability index of the semiconductor temperature sensor is calculated for each monitoring period.

[0016] Preferably, the heating process monitoring module generates semiconductor temperature regulation requirement parameters for each monitoring period by integrating the temperature stability index and the thermal conduction stability index.

[0017] Preferably, the temperature control strategy execution module compares the semiconductor temperature regulation requirement parameters for each monitoring period with the preset semiconductor temperature regulation requirement threshold.

[0018] When the semiconductor temperature regulation requirement parameter during a certain monitoring period is higher than the semiconductor temperature regulation requirement threshold, the temperature stability index of that period is compared with the temperature stability critical value. If the temperature stability index exceeds the temperature stability critical value, the current input intensity of the semiconductor temperature sensor is adjusted.

[0019] At the same time, the thermal conductivity stability index of the period is compared with the thermal conductivity stability critical value. If the thermal conductivity stability index exceeds the thermal conductivity stability critical value, the heat dissipation rate of the semiconductor device is adjusted.

[0020] When the semiconductor temperature control requirement parameters do not exceed the semiconductor temperature control requirement threshold, the current power output state is maintained;

[0021] After the adjustment is completed, the semiconductor temperature control requirements are recalculated and verified, and the number of times the semiconductor current is adjusted and the number of times the heat dissipation rate is adjusted are accumulated. When the accumulated number reaches the set upper limit, an early warning signal is triggered.

[0022] Preferably, the temperature control strategy execution module turns off the semiconductor main heating unit after the cooking task is completed, continuously monitors the residual temperature of the ceramic pot, and activates the low temperature maintenance mode of the semiconductor temperature sensor when the residual temperature is lower than the preset heat preservation threshold.

[0023] Preferably, the overheat protection module reduces the power output of the semiconductor temperature sensor and issues an alarm when the internal temperature of the ceramic pot exceeds the safe temperature limit;

[0024] When the pressure on the surface of the pot exceeds the safe pressure limit, the power output is reduced and the heat dissipation rate is increased simultaneously.

[0025] When the semiconductor operating current exceeds the safe current limit, the power supply to the semiconductor device is cut off.

[0026] Preferably, the semiconductor temperature control requirement parameters are generated through the following steps:

[0027] The mean of the temperature fluctuation amplitude dataset for each monitoring period is extracted as the temperature fluctuation baseline;

[0028] The mean of the heat conduction fluctuation amplitude dataset for each monitoring period is extracted as the base value of heat conduction fluctuation.

[0029] The temperature stability index and thermal conductivity stability index are weighted and fused with the temperature fluctuation base and thermal conductivity fluctuation base, respectively, to output the semiconductor temperature regulation requirement parameters.

[0030] Preferably, the system further includes:

[0031] A multi-mode switching execution unit, integrated within the temperature control strategy execution module, is used to activate the segmented power output mode of the semiconductor device when the cumulative number of semiconductor current adjustments reaches a set upper limit. This mode extracts the deviation coefficients between the temperature stability index and the thermal conductivity stability index during the current monitoring period, and uses these deviation coefficients to split the power output of the semiconductor device into a basic maintenance power segment and a pulse compensation power segment. During the operation of the pulse compensation power segment, the real-time data verification mechanism of the overheat protection module is activated. If the verification is successful, a mode solidification instruction is generated and fed back to the main control logic of the temperature control strategy execution module.

[0032] Compared with the prior art, the beneficial effects of the present invention are:

[0033] This system employs a semiconductor temperature sensor that directly contacts the bottom of the pot, utilizing its millisecond-level response speed to capture microscopic temperature fluctuations, reducing temperature detection latency by two orders of magnitude compared to traditional thermocouples. By segmenting dynamic monitoring periods and extracting time-frequency domain features, it can identify temperature change patterns unique to different cooking stages, such as the instantaneous temperature gradient during stir-frying and the periodic fluctuations during simmering, thereby matching differentiated power adjustment strategies. The negative temperature coefficient characteristic of semiconductor devices is utilized in reverse, automatically generating current negative feedback in the event of abnormal temperature rise. This intrinsic safety mechanism significantly reduces the triggering frequency of hardware protection circuits.

[0034] The multi-parameter fusion overheat protection mechanism overcomes the limitations of single threshold judgment. By establishing a correlation model between temperature gradient field, pressure change rate, and current harmonics, it can predict potential risks in advance. Experiments show that this model can effectively distinguish between normal boiling and the initial state of dry burning, avoiding cooking interruptions caused by accidental triggering. The thermal stress problem between the ceramic pot body and the semiconductor is alleviated by an adaptive contact pressure mechanism. This mechanism adjusts the mechanical clamping force according to the real-time temperature to compensate for gap changes caused by different coefficients of thermal expansion.

[0035] The system employs an incremental power regulation algorithm, with each adjustment not exceeding 5% of the current value. This gradual control strategy eliminates the power step phenomenon caused by traditional PID algorithms, significantly improving the smoothness of the ceramic pot's temperature curve. The residual heat maintenance program incorporates an ambient temperature compensation factor to dynamically calculate the optimal heat preservation power, avoiding energy waste. The semiconductor sensor packaging structure uses a multi-layer oleophobic and hydrophobic film, resisting cooking environment contamination while ensuring heat conduction efficiency. Accelerated aging tests show that its service life meets the requirements of more than 5 years in a typical kitchen environment. Attached Figure Description

[0036] Figure 1 This is a schematic diagram illustrating the working principle of the intelligent ceramic pot heating regulation system with semiconductor temperature sensor described in this invention.

[0037] Figure 2This is a flowchart illustrating the data acquisition process of the heating process monitoring module.

[0038] Figure 3 A flowchart for calculating stability indices;

[0039] Figure 4 A flowchart for dynamically adjusting the temperature control strategy. Detailed Implementation

[0040] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0041] Please see Figure 1 This invention provides an intelligent ceramic pot heating regulation system with a semiconductor temperature sensor, and the specific implementation steps are as follows:

[0042] When the food parameter acquisition module is running, it acquires the target cooking parameters corresponding to the cooking task currently being performed by the ceramic pot. These parameters will serve as the benchmark for subsequent heating adjustments.

[0043] Upon receiving the heating start command, the heating process monitoring module controls the semiconductor temperature sensor to begin heating, using the target cooking parameters as a reference. During this process, the system divides the process into continuous monitoring periods, collecting real-time data on the semiconductor temperature fluctuations at the bottom of the ceramic pot within each period, and generating a semiconductor temperature fluctuation feature set for each monitoring period based on the collected data.

[0044] The temperature control strategy execution module analyzes the semiconductor temperature fluctuation feature set to obtain the semiconductor temperature regulation requirement parameters, and then dynamically adjusts the power output of the semiconductor temperature sensor according to the parameters. After the cooking task is completed, the residual temperature maintenance program of the ceramic pot is automatically started.

[0045] The overheat protection module continuously monitors the temperature distribution inside the ceramic pot, the pressure value on the surface of the pot, and the operating current intensity of the semiconductor. Once any of the monitored values ​​exceeds the safe range, the corresponding protection mechanism is immediately triggered.

[0046] Example 1: See Figure 2The target cooking parameters include the total cooking time setting, the baseline temperature setting, the baseline humidity setting, and the baseline heat transfer rate setting. These parameters are automatically generated by the ingredient parameter acquisition module based on user-inputted information such as cooking type, ingredient type, and quantity before the system starts the cooking task, or can be manually set by the user through the interactive interface. When the ingredient parameter acquisition module acquires the target cooking parameters, considering the characteristics of uncoated non-stick pans, the target cooking parameters also include a critical non-stick temperature setting. This value is determined based on the temperature resistance characteristics and non-stick maintenance requirements of the uncoated non-stick pan surface material, and is used to prevent the heating temperature from exceeding this value, which could cause food to stick or damage the non-stick properties of the pan surface. The total cooking time setting specifies the total time required to complete the current cooking task. This time is calculated from the moment the heating start command is issued until the system determines that the cooking task is complete. The baseline temperature setting is the core temperature reference that the ceramic pan should maintain during the cooking process. Different ingredients and cooking methods correspond to different baseline temperatures; for example, the baseline temperature setting differs between stewing meat and steaming vegetables. The baseline humidity setting reflects the suitable humidity level in the cooking environment. The system can indirectly correlate this parameter through a built-in humidity sensor to help determine the cooking status. The baseline heat transfer rate setting is related to the material properties of the ceramic pot and the heating efficiency of the semiconductor temperature sensor, and is used to measure the ideal rate of heat transfer between the pot and the food.

[0047] Upon receiving the heating start command, the heating process monitoring module controls the semiconductor temperature sensor to enter working mode based on the aforementioned target cooking parameters, initiating the heating operation. When receiving the heating start command and controlling the heating operation based on the target cooking parameters, the interval between continuous monitoring periods is appropriately shortened to capture temperature changes more intensively. To achieve refined monitoring of the heating process, the system divides the entire heating period into multiple equally spaced monitoring periods. The interval length can be adaptively adjusted according to the total cooking time setting. If the total time is short, the interval length is shortened accordingly to ensure monitoring density; if the total time is long, the interval length can be appropriately extended to reduce data processing load. For example, a cooking task with a total duration of 30 minutes can be divided into 60 monitoring periods with an interval of 30 seconds; a cooking task with a total duration of 2 hours can be divided into 120 monitoring periods with an interval of 1 minute.

[0048] During each monitoring period, the heating process monitoring module simultaneously collects multiple data points using a semiconductor temperature sensor and its associated detection circuitry. These include the highest operating temperature of the semiconductor temperature sensor at the bottom of the ceramic pot (the highest temperature value detected by the sensor during that period); the lowest operating temperature (the lowest temperature value detected by the sensor during that period); the maximum thermal conductivity rate (the fastest rate at which heat is transferred from the sensor to the pot body during that period); and the minimum thermal conductivity rate (the slowest rate at which heat is transferred during that period). When collecting real-time data on semiconductor temperature fluctuations at the bottom of the ceramic pot, the module focuses on monitoring for any sudden temperature spikes approaching the anti-stick critical temperature setting. The frequency of these data collections is matched to the sensor's response speed to ensure that extreme changes within a given period are captured.

[0049] After data acquisition, the heating process monitoring module processes the data for each monitoring period. It calculates the difference between the highest and lowest operating temperatures within that period, obtaining a data point in the temperature fluctuation amplitude dataset; it also calculates the difference between the maximum and minimum thermal conductivity rates, obtaining a data point in the thermal conductivity fluctuation amplitude dataset. When calculating the temperature fluctuation amplitude dataset by comparing the highest and lowest operating temperatures within each monitoring period, whether the temperature fluctuation exceeds the anti-sticking safety fluctuation range is considered as an additional factor. As each monitoring period proceeds sequentially, these data points accumulate, gradually forming complete temperature fluctuation amplitude and thermal conductivity fluctuation amplitude datasets.

[0050] The temperature fluctuation amplitude dataset visually presents the temperature range within each monitoring period. A large difference in a particular period indicates drastic temperature fluctuations; conversely, a smaller difference indicates relatively stable temperatures. The heat conduction fluctuation amplitude dataset reflects the fluctuations in heat transfer rate. The magnitude of the difference is related to factors such as the contact state between the pan and the food, and the thermal expansion of the food. When collecting the maximum and minimum heat conduction rates and calculating the difference to form the heat conduction fluctuation amplitude dataset, the uniformity of heat conduction required for uncoated non-stick pans is taken into account to ensure that fluctuations in heat conduction rate do not cause significant temperature differences on the pan surface, thus preventing food from sticking. For example, when food rolls around in the pan, causing changes in the contact area with the pan, the heat conduction rate will fluctuate, which will then be reflected as a large difference in the dataset.

[0051] These two datasets are transmitted in real time to the analysis unit of the heating process monitoring module, serving as the raw data for subsequent calculations of temperature stability and heat conduction stability indices. This monitoring data, related to the non-stick properties of uncoated non-stick pans, will be incorporated into the semiconductor temperature fluctuation feature set, providing a targeted basis for subsequent temperature control adjustments. Through continuous updates and analysis of the datasets, the system can dynamically grasp the temperature and heat conduction trends during the heating process, providing a direct basis for the adjustment operations of the temperature control strategy execution module. Simultaneously, the datasets will also be stored in the system's temporary storage unit, automatically deleted after the cooking task is completed, or retained according to user settings for later retrieval.

[0052] Example 2: See Figure 3 When analyzing each monitoring period, the heating process monitoring module first calculates the temperature stability index by combining the baseline temperature setpoint and the temperature fluctuation amplitude dataset. For uncoated non-stick pans, an additional non-stick critical temperature setpoint is introduced as a reference benchmark. Whether the actual temperature fluctuation in each monitoring period touches the non-stick critical temperature range is taken into consideration. When the temperature fluctuation approaches or enters this range, the temperature stability index is given a lower weight, thereby highlighting the focus on the key temperature range of the non-stick performance of uncoated non-stick pans.

[0053] The system correlates and analyzes the data in the temperature fluctuation dataset for each monitoring period with the baseline temperature setpoint. For example, if the temperature fluctuation range is large and deviates significantly from the baseline temperature setpoint during a monitoring period, the temperature stability index for that period will show a lower value; conversely, if the temperature fluctuation range is small and fluctuates slightly around the baseline temperature setpoint, the temperature stability index will be at a higher level. This calculation process involves a comprehensive consideration of the frequency and amplitude of temperature fluctuations and their deviation from the baseline temperature. Internal logic determines whether the temperature change is within a reasonable range, thus generating index data that quantifies the degree of temperature stability.

[0054] Meanwhile, the heating process monitoring module combines the baseline heat conduction rate setpoint and the heat conduction fluctuation amplitude dataset to calculate the heat conduction stability index of the semiconductor temperature sensor during each monitoring period. Taking into account the special requirements of uncoated non-stick pans for uniform heat conduction, it uses whether the heat conduction rate fluctuation causes local temperature differences on the pan surface to exceed the non-stick safety temperature difference threshold as a supplementary judgment condition. If local temperature differences exceed the limit, the heat conduction stability index will be lowered accordingly to reflect the assessment of the risk of sticking to the bottom of the uncoated non-stick pan due to uneven heat conduction. Fluctuations in the heat conduction rate directly affect the efficiency of heat transfer between the pan and the food. The system analyzes the trend of heat conduction rate changes by comparing the heat conduction fluctuation amplitude data with the baseline heat conduction rate setpoint during each monitoring period. When the value in the heat conduction fluctuation amplitude dataset deviates little from the baseline heat conduction rate setpoint, it indicates that heat transfer is relatively stable, and the heat conduction stability index value is high; if the deviation is large and fluctuations are frequent, the heat conduction stability index value is low. The calculation of this indicator also takes into account various factors such as the frequency and amplitude of the heat conduction rate fluctuations and the degree of deviation from the benchmark value, so as to comprehensively evaluate the steady state of the heat conduction process.

[0055] After obtaining the temperature stability index and thermal conductivity stability index separately, the heating process monitoring module fuses these two indices to generate semiconductor temperature regulation requirement parameters for each monitoring period. When generating these parameters, the system appropriately increases the weighted proportions of the temperature stability and thermal conductivity stability indices, which are related to non-stick properties, based on the material characteristics of the uncoated non-stick pan. This ensures the generated semiconductor temperature regulation requirement parameters better match the pan's precise temperature and heat conduction control needs, thus better maintaining its non-stick performance. During the fusion process, the system assigns different weights to the two indices based on the characteristics of the current cooking task. For example, in cooking scenarios requiring precise temperature control, the weight of the temperature stability index is relatively high; while in scenarios emphasizing even heat transfer, the weight of the thermal conductivity stability index is increased. Through this weighted fusion method, the values ​​of the two indices are integrated into a single comprehensive parameter—the semiconductor temperature regulation requirement parameter. This parameter comprehensively reflects the stability of both temperature and heat conduction during the current monitoring period. It includes the impact of temperature fluctuations on cooking results and also considers the role of heat conduction efficiency in ensuring the uniformity of food heating.

[0056] Furthermore, during the fusion process, the system also considers the chronological order of each monitoring period and performs correlation analysis on the indicator data of adjacent periods. If the temperature stability index or heat conduction stability index of a certain monitoring period shows a significant abrupt change compared to the previous period, the system will handle this abrupt change specially during fusion to avoid unreasonable jumps in temperature regulation parameters due to sudden fluctuations. This processing method ensures that the generated semiconductor temperature regulation parameter not only reflects the heating state of the current period but also maintains consistency with the overall heating process trend, providing a continuous and reliable adjustment basis for the temperature control strategy execution module. Through this analysis and fusion process, the heating process monitoring module can generate accurate semiconductor temperature regulation parameter for each monitoring period, ensuring that the execution of the temperature control strategy is more closely aligned with actual cooking needs.

[0057] Example 3: See Figure 4 When the temperature control strategy execution module compares the semiconductor temperature regulation requirement parameters for each monitoring period with the preset semiconductor temperature regulation requirement thresholds, for uncoated non-stick pans, the preset semiconductor temperature regulation requirement thresholds include a sub-threshold corresponding to the non-stick performance. This sub-threshold is determined based on the non-stick critical temperature setting and the non-stick safety temperature difference threshold of the uncoated non-stick pan. When the semiconductor temperature regulation requirement parameters involve non-stick related indicators, they will be compared with this sub-threshold first. The semiconductor temperature regulation requirement thresholds are preset according to the material tolerance of the ceramic pan, the power range of the semiconductor temperature sensor, and the needs of common cooking scenarios. This threshold can be adaptively adjusted for different cooking modes.

[0058] When the semiconductor temperature regulation requirement parameter exceeds the semiconductor temperature regulation requirement threshold during a certain monitoring period, and if, during the comparison of the temperature stability index with the temperature stability critical value, it is found that the reason for the temperature stability index exceeding the critical value is related to the local temperature of the uncoated non-stick pan approaching the non-stick critical temperature, then a gentler adjustment gradient will be used when adjusting the current input intensity of the semiconductor temperature sensor. This avoids damage to the non-stick surface caused by drastic temperature fluctuations due to sudden current changes, and the system enters the fine adjustment stage. First, the temperature stability index for that period is compared with the temperature stability critical value, which is determined based on the reference temperature setting and the thermal inertia characteristics of the ceramic pan. If the temperature stability index exceeds the temperature stability critical value, it indicates that the current temperature fluctuation exceeds the normal range. At this time, the system will adjust the current input intensity of the semiconductor temperature sensor. The adjustment amount of the current input intensity is related to the magnitude of the temperature stability index exceeding the critical value; the larger the magnitude, the greater the adjustment amount. By changing the current, the heating power of the semiconductor temperature sensor is adjusted, thereby affecting the temperature change trend of the ceramic pan.

[0059] Simultaneously, the system compares the thermal conductivity stability index for that period with the critical value for thermal conductivity stability. The critical value is related to the baseline thermal conductivity rate setting and the contact state between the pot and the food. When comparing the thermal conductivity stability index with the critical value, if the reason for the index exceeding the standard is uneven contact between the bottom of the uncoated non-stick pan and the heating source, causing thermal conductivity deviation, the system will adjust the heat dissipation rate of the semiconductor device by incorporating the surface temperature distribution data of the pot. This ensures uniform heat dissipation across the pot and reduces the decrease in non-stick performance caused by localized overheating. If the thermal conductivity stability index exceeds the critical value, it indicates significant fluctuations in the heat transfer process, and the system will adjust the heat dissipation rate of the semiconductor device. This adjustment is achieved by controlling the speed of the cooling fan or the contact area of ​​the heat sink to accelerate or slow down heat dissipation, thus stabilizing the thermal conductivity process.

[0060] When the semiconductor temperature regulation requirement parameter does not exceed the semiconductor temperature regulation requirement threshold, it indicates that the current heating state is within a reasonable range. The system maintains the current power output state of the semiconductor temperature sensor unchanged, and no adjustment is required. When the semiconductor temperature regulation requirement parameter does not exceed the semiconductor temperature regulation requirement threshold, the system continuously monitors the temperature uniformity of the uncoated non-stick pan surface while maintaining the current power output state, ensuring that it remains within the temperature range where the non-stick performance is stable.

[0061] After each adjustment, the temperature control strategy execution module immediately re-collects temperature fluctuation data and heat conduction fluctuation data for the monitoring period, and recalculates the semiconductor temperature regulation requirement parameters to verify whether the adjusted effect meets expectations. When verifying the recalculation of semiconductor temperature regulation requirement parameters after adjustment, the verification scope includes whether the non-stick performance indicators of the uncoated non-stick pan have returned to normal. If not, the adjustment continues.

[0062] Throughout the adjustment process, the system accumulates the number of semiconductor current adjustments and the number of heat dissipation rate adjustments. The current adjustment count records each change in the current input intensity to the semiconductor temperature sensor, while the heat dissipation rate adjustment count records each adjustment to the heat dissipation system. When accumulating the number of semiconductor current adjustments and heat dissipation rate adjustments, if the adjustment operation primarily focuses on maintaining the non-stick performance of the uncoated non-stick pan, the upper limit of the number of adjustments will be appropriately relaxed to ensure the continuity of its non-stick effect.

[0063] When the cumulative number of times for any of these items reaches the set limit, the system will trigger an early warning signal, which will be communicated to the user through sound prompts, flashing indicator lights, or push notifications from connected smart devices.

[0064] Furthermore, the temperature control strategy execution module automatically shuts down the semiconductor main heating unit and stops the active heating process after the cooking task is completed. Afterward, the system activates a residual temperature monitoring mechanism, continuously collecting temperature data from the ceramic pot via a semiconductor temperature sensor to monitor changes in residual temperature in real time. The preset heat preservation threshold is determined based on the optimal storage temperature of the food and the heat dissipation characteristics of the ceramic pot. When the detected residual temperature falls below this threshold, the system activates the low-temperature maintenance mode of the semiconductor temperature sensor. In low-temperature maintenance mode, the semiconductor temperature sensor operates at low power, intermittently outputting heat to keep the ceramic pot's temperature slightly above the heat preservation threshold until the user manually turns off the mode or the maintenance time reaches the preset upper limit.

[0065] During the cumulative adjustment process, the adjustment frequency coefficient is calculated using the following formula:

[0066]

[0067] Where K represents the adjustment frequency coefficient, N1 represents the cumulative number of semiconductor current adjustments, N2 represents the cumulative number of heat dissipation rate adjustments, and T represents the cumulative duration from the start of heating to the current moment. This coefficient is used to help determine the frequency of adjustment operations and provides supplementary reference for triggering warning signals.

[0068] Example 4: The overheat protection module continuously monitors the temperature distribution inside the ceramic pot using sensors distributed at different locations. Its safe temperature limit is determined based on the high-temperature resistance and non-stick critical temperature of the uncoated non-stick pan. For uncoated non-stick pans, this limit must ensure that it does not exceed the critical temperature at which its non-stick properties are compromised. When the temperature in any area exceeds this safe temperature limit, in addition to reducing power output and issuing an alarm, priority must be given to preventing high-temperature damage to the non-stick properties. These sensors include infrared temperature sensors embedded in the side wall of the pot and contact temperature sensors installed inside the lid, capable of comprehensively capturing temperature values ​​in different areas inside the pot. When the temperature in any area exceeds the safe temperature limit, the system immediately reduces the power output of the semiconductor temperature sensor, decreasing heating efficiency by reducing current input. Simultaneously, a buzzer installed on the device casing emits a continuous alarm sound, with the frequency remaining constant until the temperature drops below the safe temperature limit. The safe temperature limit is determined based on the high temperature resistance of the ceramic pot. For example, if the ceramic pot is made of high-temperature resistant ceramic, its safe temperature limit will be set relatively high, while the safe temperature limit for ordinary ceramic materials will be lower.

[0069] When monitoring the pressure value on the pot surface, the system relies on pressure sensors attached to the bottom and side walls of the pot to collect data. Considering that the surface of uncoated non-stick pans is sensitive to pressure, excessive pressure can affect the bonding stability between the non-stick layer and the pot body. Therefore, the setting of the safe pressure limit needs to take into account the pressure-bearing capacity of the uncoated non-stick pan surface to avoid a decrease in non-stick performance due to excessive pressure. These sensors can detect changes in the weight of food, steam pressure, and pressure changes caused by external contact. When the monitored pressure value exceeds the safe pressure limit, the system simultaneously performs two operations: firstly, it reduces the power output of the semiconductor temperature sensor to reduce heat generation and lower the steam pressure inside the pot; secondly, it increases the heat dissipation rate of the semiconductor device by increasing the speed of the cooling fan to increase airflow and accelerate heat dissipation. The setting of the safe pressure limit is related to the sealing performance of the pot lid. A pot lid with better sealing performance corresponds to a slightly higher safe pressure limit to adapt to cooking scenarios that require a certain pressure, such as stewing.

[0070] Monitoring the semiconductor operating current intensity is performed in real time by a current sensor connected in series in the semiconductor temperature sensor's power supply circuit. The current sensor accurately measures the current value at every instant. When the detected current intensity exceeds the safe current limit, the system triggers an emergency protection mechanism, controlling a relay to cut off the power supply to the semiconductor device, causing the semiconductor temperature sensor to immediately stop working and preventing device burnout due to overcurrent. The safe current limit is determined based on the rated operating current of the semiconductor temperature sensor, typically set at 1.2 times the rated current, providing both a buffer and effective device protection.

[0071] The generation of semiconductor temperature control requirements parameters involves three steps. First, the mean of the temperature fluctuation amplitude dataset for each monitoring period is extracted as the temperature fluctuation baseline. Simultaneously, the influence of the non-stick critical temperature of uncoated non-stick pans on the temperature fluctuation amplitude is considered. When the temperature fluctuation amplitude involves a range approaching or exceeding the non-stick critical temperature, this portion of the data is given slightly higher weight in the mean calculation. The temperature fluctuation amplitude dataset contains the difference between the highest and lowest operating temperatures within each monitoring period. When calculating the mean, all differences are summed and divided by the number of monitoring periods; the result is the temperature fluctuation baseline, which reflects the average level of temperature fluctuation throughout the heating process. Second, the mean of the heat conduction fluctuation amplitude dataset for each monitoring period is extracted as the heat conduction fluctuation baseline. Simultaneously, the influence of the non-stick critical temperature of uncoated non-stick pans on the temperature fluctuation amplitude is considered. When the temperature fluctuation amplitude involves a range approaching or exceeding the non-stick critical temperature, this portion of the data is given slightly higher weight in the mean calculation. The heat conduction fluctuation amplitude dataset consists of the difference between the maximum and minimum heat conduction rates during each monitoring period. Its mean is calculated in the same way as the temperature fluctuation baseline, which reflects the average fluctuation of the heat conduction rate. In the third step, when weighting and fusing the temperature stability index and the heat conduction stability index with the temperature fluctuation baseline and the heat conduction fluctuation baseline respectively, for uncoated non-stick pans, it is crucial to consider the requirements of non-stick performance on temperature stability and heat conduction uniformity. The weight of the temperature stability index near the non-stick critical temperature range and the weight of the heat conduction stability index in ensuring heat conduction uniformity should be appropriately increased to make the generated semiconductor temperature control requirements more suitable for the performance maintenance needs of uncoated non-stick pans. During fusion, different weights are assigned based on the dependence of the current cooking task on temperature and heat conduction. For example, the weight of the temperature stability index is higher when frying food, while the weight of the heat conduction stability index is higher when simmering soup. The weighted results are then summed to obtain the semiconductor temperature control requirements.

[0072] The following is a table of example parameters for different monitoring scenarios:

[0073]

[0074] The safety limits and monitoring values ​​in the table are for illustrative purposes only and will be adjusted according to specific equipment parameters and cooking needs in actual applications. Through the above process, the overheat protection module can comprehensively ensure the safe operation of the system, while the semiconductor temperature regulation requirements provide a precise basis for temperature control adjustment.

[0075] Example 5: The multi-mode switching execution unit, as a component of the temperature control strategy execution module, is always in standby mode, continuously receiving accumulated information on the number of semiconductor current adjustments. For uncoated non-stick pans, this upper limit is adjusted based on their non-stick critical temperature sensitivity range to avoid excessive temperature fluctuations caused by frequent current adjustments within this range, which could damage the non-stick performance. When the accumulated number of semiconductor current adjustments reaches the preset upper limit, the multi-mode switching execution unit is activated, immediately initiating the segmented power output mode of the semiconductor device. This upper limit is determined based on the durability parameters of the semiconductor temperature sensor and long-term operating data, aiming to prevent accelerated device wear due to frequent current adjustments.

[0076] Upon entering the segmented power output mode, the system extracts the deviation coefficients of the temperature stability index and the heat conduction stability index for the current monitoring period. It uses the non-stick critical temperature of the uncoated non-stick pan as a crucial reference benchmark, allowing the deviation coefficients to more accurately reflect the impact on non-stick performance. The deviation coefficients are calculated based on the degree of deviation between the two indicators and their respective benchmark values. By comparing the actual indicator values ​​with the standard values ​​under ideal conditions, data reflecting the degree to which the current heating state deviates from expectations is obtained. The magnitude of the deviation coefficient directly affects the segmentation method of power output; the greater the deviation, the more refined the subsequent power compensation strategy needs to be.

[0077] Based on the deviation coefficient, the system divides the power output of the semiconductor device into a basic maintenance power segment and a pulse compensation power segment. The power value of the basic maintenance power segment must ensure that it does not exceed the power level corresponding to the non-stick critical temperature of the uncoated non-stick pan. The pulse frequency and duration of the pulse compensation power segment must be strictly controlled to avoid local temperature instantaneously exceeding the non-stick critical temperature due to pulse heating. The basic maintenance power segment provides the basic power required to maintain the current cooking state. Its power value is referenced to the reference temperature setting and the actual temperature of the ceramic pan, ensuring that the food does not stop heating due to a sudden drop in power. The pulse compensation power segment outputs additional power in the form of intermittent pulses according to the magnitude of the deviation coefficient. The frequency and duration of the pulses are positively correlated with the deviation coefficient, that is, the larger the deviation coefficient, the higher the frequency of pulses and the longer the duration of each pulse. Through this pulsed supplementary heating, the deviation in temperature and heat conduction is gradually corrected.

[0078] During pulse-compensated power operation, the system automatically activates the real-time data verification mechanism of the overheat protection module. In addition to high-frequency monitoring of routine items, the overheat protection module also focuses on verifying the temperature uniformity of the uncoated non-stick pan surface to ensure no localized high-temperature points affect the non-stick performance. Once activated, the monitoring frequency of the overheat protection module increases to three times the normal level, performing high-frequency acquisition and analysis of the internal temperature distribution of the ceramic pan, the pressure value on the pan surface, and the semiconductor operating current intensity. During the intervals between each pulse output, the system verifies the acquired data in real time, checking whether all indicators are within safe ranges and whether there are any abnormal fluctuations caused by pulse heating.

[0079] If the real-time data verification mechanism passes multiple consecutive verifications (i.e., all monitored values ​​remain within safe limits, and the deviation coefficients of temperature stability and thermal conductivity stability show a decreasing trend), the system will generate a mode solidification command. This command contains adaptation parameters for the non-stick critical temperature of uncoated non-stick pans. When the main control logic receives this command and adopts this mode, it can continuously ensure stable non-stick performance. This command includes information such as the base sustaining power value, pulse compensation parameters, and verification timestamp for the current segmented power output mode. This information is fed back to the main control logic of the temperature control strategy execution module via an internal data channel. Upon receiving the command, the main control logic sets the current segmented power output mode as the default operating mode until the cooking task is completed or a new adjustment requirement causes a mode switch.

[0080] If, during the operation of the pulse-compensated power segment, the real-time data verification mechanism detects that a monitored value exceeds the safe range, the system will immediately suspend the output of the pulse-compensated power segment, retaining only the basic maintenance power segment, and triggering the corresponding protection mechanism of the overheat protection module. After the abnormal situation is resolved, the system will reassess whether to continue executing the segmented power output mode. If an abnormality is detected during verification, in addition to suspending pulse compensation, retaining the basic maintenance power, and triggering the protection mechanism, the system will also prioritize adjusting the temperature back to the non-stick safe range to minimize damage to the non-stick properties of uncoated non-stick pans. This dynamic adjustment mechanism ensures that segmented power output improves adjustment accuracy without threatening system safety.

[0081] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0082] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A smart ceramic pot heating regulation system using a semiconductor temperature sensor, characterized in that, Include: The ingredient parameter acquisition module is used to obtain the target cooking parameters corresponding to the current cooking task of the ceramic pot; The heating process monitoring module is used to receive the heating start command, control the semiconductor temperature sensor to perform the heating operation based on the target cooking parameters, divide the continuous monitoring period, collect the semiconductor temperature fluctuation data of the bottom of the ceramic pot in real time during each monitoring period, and output the semiconductor temperature fluctuation feature set corresponding to each monitoring period. The temperature control strategy execution module is used to analyze the semiconductor temperature fluctuation feature set to generate semiconductor temperature regulation requirement parameters, dynamically adjust the power output of the semiconductor temperature sensor according to the parameters, and start the residual temperature maintenance program of the ceramic pot after the cooking task is completed. The overheat protection module is used to continuously monitor the internal temperature distribution of the ceramic pot, the pressure value on the surface of the pot, and the semiconductor operating current intensity. When any monitored value exceeds the safe range, the protection mechanism is triggered.

2. The intelligent ceramic pot heating regulation system with a semiconductor temperature sensor according to claim 1, characterized in that, The target cooking parameters include the total cooking time setting, the reference temperature setting, the reference humidity setting, and the reference heat transfer rate setting.

3. The intelligent ceramic pot heating regulation system with a semiconductor temperature sensor according to claim 2, characterized in that, When the heating process monitoring module performs the heating operation, it sets multiple monitoring periods at equal intervals and synchronously collects the highest operating temperature, lowest operating temperature, maximum heat conduction rate and minimum heat conduction rate of the semiconductor temperature sensor at the bottom of the ceramic pot during each monitoring period. The differences between the highest and lowest operating temperatures and the differences between the maximum and minimum thermal conductivity rates are calculated for each monitoring period to form a temperature fluctuation amplitude dataset and a thermal conductivity fluctuation amplitude dataset.

4. The intelligent ceramic pot heating regulation system with a semiconductor temperature sensor according to claim 3, characterized in that, When the heating process monitoring module performs analysis on each monitoring period, it combines the reference temperature set value and the temperature fluctuation amplitude dataset to calculate the temperature stability index of the semiconductor temperature sensor in each monitoring period. By combining the aforementioned baseline thermal conduction rate setpoint with the thermal conduction fluctuation amplitude dataset, the thermal conduction stability index of the semiconductor temperature sensor is calculated for each monitoring period.

5. The intelligent ceramic pot heating regulation system with a semiconductor temperature sensor according to claim 4, characterized in that, The heating process monitoring module generates semiconductor temperature control requirements parameters for each monitoring period by integrating the temperature stability index and the thermal conduction stability index.

6. The intelligent ceramic pot heating regulation system with a semiconductor temperature sensor according to claim 4, characterized in that, The temperature control strategy execution module compares the semiconductor temperature regulation requirement parameters for each monitoring period with the preset semiconductor temperature regulation requirement threshold. When the semiconductor temperature regulation requirement parameter during a certain monitoring period is higher than the semiconductor temperature regulation requirement threshold, the temperature stability index of that period is compared with the temperature stability critical value. If the temperature stability index exceeds the temperature stability critical value, the current input intensity of the semiconductor temperature sensor is adjusted. At the same time, the thermal conductivity stability index of the period is compared with the thermal conductivity stability critical value. If the thermal conductivity stability index exceeds the thermal conductivity stability critical value, the heat dissipation rate of the semiconductor device is adjusted. When the semiconductor temperature control requirement parameters do not exceed the semiconductor temperature control requirement threshold, the current power output state is maintained. After the adjustment is completed, the semiconductor temperature control requirements are recalculated and verified, and the number of times the semiconductor current is adjusted and the number of times the heat dissipation rate is adjusted are accumulated. When the accumulated number reaches the set upper limit, an early warning signal is triggered.

7. The intelligent ceramic pot heating regulation system with a semiconductor temperature sensor according to claim 1, characterized in that, The temperature control strategy execution module shuts down the semiconductor main heating unit after the cooking task is completed, continuously monitors the residual temperature of the ceramic pot, and activates the low temperature maintenance mode of the semiconductor temperature sensor when the residual temperature is lower than the preset heat preservation threshold.

8. The intelligent ceramic pot heating regulation system with a semiconductor temperature sensor according to claim 1, characterized in that, When the internal temperature of the ceramic pot exceeds the safe temperature limit, the overheat protection module reduces the power output of the semiconductor temperature sensor and issues an alarm. When the pressure on the surface of the pot exceeds the safe pressure limit, the power output is reduced and the heat dissipation rate is increased simultaneously. When the semiconductor operating current exceeds the safe current limit, the power supply to the semiconductor device is cut off.

9. The intelligent ceramic pot heating regulation system with a semiconductor temperature sensor according to claim 3, characterized in that, The semiconductor temperature control requirements parameters are generated through the following steps: The mean of the temperature fluctuation amplitude dataset for each monitoring period is extracted as the temperature fluctuation baseline; The mean of the heat conduction fluctuation amplitude dataset for each monitoring period is extracted as the base value of heat conduction fluctuation. The temperature stability index and thermal conductivity stability index are weighted and fused with the temperature fluctuation base and thermal conductivity fluctuation base, respectively, to output the semiconductor temperature regulation requirement parameters.

10. The intelligent ceramic pot heating regulation system with a semiconductor temperature sensor according to claim 6, characterized in that, Also includes: A multi-mode switching execution unit, integrated within the temperature control strategy execution module, is used to activate the segmented power output mode of the semiconductor device when the cumulative number of semiconductor current adjustments reaches a set upper limit. This mode extracts the deviation coefficients between the temperature stability index and the thermal conductivity stability index during the current monitoring period, and uses these deviation coefficients to split the power output of the semiconductor device into a basic maintenance power segment and a pulse compensation power segment. During the operation of the pulse compensation power segment, the real-time data verification mechanism of the overheat protection module is activated. If the verification is successful, a mode solidification instruction is generated and fed back to the main control logic of the temperature control strategy execution module.

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