Temperature controlled susceptor for semiconductor wafer processing

Abstract

A susceptor for supporting a semiconductor wafer during wafer processing operations is disclosed. Such a susceptor may include active cooling and active heating systems, allowing it to heat and / or cool the wafer over a wide range of potential temperatures as well as quickly proceed, thereby improving process throughput by reducing the latency required for the susceptor to reach the target temperature.

Description

[0001] Related applications The PCT application form is filed together with this specification as part of this application. Each application listed in the concurrently filed PCT application form that claims a benefit or priority under this application is incorporated herein by reference in its entirety for all purposes. Background Technology

[0002] Semiconductor manufacturing processes typically occur indoors, where semiconductor wafers or multiple semiconductor wafers are supported on pedestals during wafer handling operations. Such pedestals may be positioned below a corresponding gas distribution system (e.g., a nozzle) that distributes process gases to the exposed side of the semiconductor wafers supported by the pedestals. Summary of the Invention

[0003] Details of one or more implementations of the subject matter described in this specification are illustrated in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the specification, drawings, and claims.

[0004] In some implementations, an apparatus may be provided comprising a base configured to support a semiconductor wafer during semiconductor processing operations. The base may include: a body having a first side and a second side, the second side being opposite to the first side of the body; one or more heating element segments disposed within the body and within a first cylindrical region; one or more cooling channel segments disposed within the body and within a second cylindrical region; and a rod connected to the second side of the body. The first cylindrical region may be inserted between the second cylindrical region and the first side of the body, and the second cylindrical region may be inserted between the first cylindrical region and the second side of the body.

[0005] In some implementations, the one or more heating element segments may be multiple heating element segments, and the multiple heating element segments may include multiple arc-shaped heating element segments.

[0006] In some implementations, the arc-shaped heating element segments can be concentric with each other.

[0007] In some implementations, the plurality of arc-shaped heating element segments may include a first heating element segment extending along a first arc-shaped heating path, a second heating element segment extending along a second arc-shaped heating path, and a third heating element segment extending along a third arc-shaped heating path. In such an implementation, the radius of the first arc-shaped heating path may be smaller than the radius of the second arc-shaped heating path and smaller than the radius of the third arc-shaped heating path.

[0008] In some such implementations, the first arc-shaped heating path, the second arc-shaped heating path, and the third arc-shaped heating path can be concentric with each other.

[0009] In some implementations, the radius of the second arc-shaped heating path can be equal to the radius of the third arc-shaped heating path.

[0010] In some implementations, the plurality of heating element segments may further include a fourth heating element segment extending along a fourth arcuate heating path and a fifth heating element segment extending along a fifth arcuate heating path, and the radius of the second arcuate heating path and the radius of the third arcuate heating path may be smaller than the radius of the fourth arcuate heating path and the radius of the fifth arcuate heating path.

[0011] In some implementations, the first arc-shaped heating path, the fourth arc-shaped heating path, and the fifth arc-shaped heating path can be concentric with each other.

[0012] In some implementations, the radius of the fourth arc-shaped heating path can be equal to the radius of the fifth arc-shaped heating path.

[0013] In some implementations, the first arc-shaped heating path, the second arc-shaped heating path, the third arc-shaped heating path, the fourth arc-shaped heating path, and the fifth arc-shaped heating path can at least partially define multiple arc-shaped heating paths, and the multiple heating element segments can also include multiple bridging heating element segments, each bridging heating element segment extending between corresponding endpoints of a pair of adjacent arc-shaped heating paths in the multiple arc-shaped heating paths.

[0014] In some implementations, the one or more cooling channel segments can be multiple cooling channel segments, and the multiple cooling channel segments include multiple arc-shaped cooling channel segments.

[0015] In some implementations, the arc-shaped cooling channel segments can be concentric with each other.

[0016] In some implementations, the plurality of cooling channel segments may include a first cooling channel segment extending along a first arc-shaped cooling path and a second cooling channel segment extending along a second arc-shaped cooling path; the first arc-shaped cooling path may be concentric with the second arc-shaped cooling path, and the radius of the first arc-shaped cooling path may be smaller than the radius of the second arc-shaped cooling path.

[0017] In some implementations, the first arc-shaped cooling path can be concentric with the second arc-shaped cooling path.

[0018] In some implementations, the plurality of cooling channel segments may further include a third cooling channel segment extending along a third arc-shaped cooling path, wherein the first arc-shaped cooling path may be concentric with the third arc-shaped cooling path, and the radius of the second arc-shaped cooling path may be smaller than the radius of the third arc-shaped cooling path.

[0019] In some implementations, the first arc-shaped cooling path and the third arc-shaped cooling path can be concentric with each other.

[0020] In some implementations, the first arc-shaped cooling path, the second arc-shaped cooling path, and the third arc-shaped cooling path may at least partially define multiple arc-shaped cooling paths, and the multiple cooling channel segments may also include multiple bridging cooling channel segments, each bridging cooling channel segment extending between the endpoints of two arc-shaped cooling paths in the multiple arc-shaped cooling paths.

[0021] In some implementations, the body may include: a first portion having a first side and a second side; a second portion having a first side and a second side; and a third portion having a first side and a second side. In such an implementation, the second portion may be inserted between the first portion and the third portion, the first side of the first portion may also be the first side of the body, the second side of the first portion may be joined or fused to the first side of the second portion, and the second side of the second portion may be joined or fused to the first side of the third portion.

[0022] In some implementations, at least one of the second side of the first portion and the first side of the second portion may include a heating element channel, and the heating element channel may accommodate one or more heating element segments.

[0023] In some implementations, the one or more heating element segments may have a D-shaped profile.

[0024] In some implementations, at least one of the second side of the second portion and the first side of the third portion may include a cooling channel, and the cooling channel may accommodate one or more cooling channel segments.

[0025] In some implementations, the one or more cooling channel segments may be tubular.

[0026] In some implementations, the one or more cooling channel segments may have an annular profile.

[0027] In some implementations, the second side of the first portion can be hard soldered to the first side of the second portion, and the second side of the second portion can be hard soldered to the first side of the third portion.

[0028] In some implementations, the first part, the second part, and the third part can all be made of aluminum alloy.

[0029] In some implementations, the main body can be made of aluminum alloy.

[0030] In some implementations, the device may further include a thermocouple coupled to the main body.

[0031] In some implementations, the device may further include: a power source; a coolant reservoir having a temperature control system; a coolant pump; and a controller configured to: control the temperature control system to maintain the coolant stored in the coolant reservoir within a first temperature range, the first temperature range being between 5°C and 50°C lower than a setpoint temperature; control the coolant pump to cause the coolant to flow from the coolant reservoir and through the one or more cooling channel sections; and cause the one or more heating element sections to receive power from the power source until the temperature sensor indicates that the temperature of the base is at or above the setpoint temperature. Attached Figure Description

[0032] The following figures are referenced in the discussion below; the figures are not intended to limit the scope, but are provided merely for the convenience of the discussion.

[0033] Figure 1 depicts a side sectional view of a base with active heating and active cooling features.

[0034] Figure 2 depicts a three-dimensional cross-sectional view of the base of Figure 1.

[0035] Figure 3 depicts the active heating and active cooling features of the base in Figure 1, as well as a perspective view of the thermocouple element.

[0036] Figures 4A and 4B depict a top view and a bottom view of the first part of the main body of the base of Figure 1.

[0037] Figures 5A and 5B depict the top and bottom views of the second part of the main body of the base of Figure 1.

[0038] Figures 6A and 6B depict a top view and a bottom view of the third part of the main body of the base of Figure 1.

[0039] Figures 7 and 8 depict isometric exploded views of the base of Figure 1.

[0040] Figures 9 and 10 depict schematic diagrams of a semiconductor processing tool having a base (e.g., the base of Figure 1).

[0041] The accompanying drawings are provided to facilitate understanding of the concepts discussed in this disclosure and to depict some implementations that fall within the scope of this disclosure, but are not intended to be restrictive – implementations that conform to this disclosure but are not depicted in the drawings are still considered to fall within the scope of this disclosure. Detailed Implementation

[0042] As described above, semiconductor wafer processing operations are typically performed on semiconductor wafers, which are supported on pedestals within a processing chamber. These pedestals are typically designed to support the semiconductor wafers from below in a uniformly distributed manner. This document discloses several pedestals used to support semiconductor wafers during wafer processing operations. Such pedestals may be equipped with active heating and cooling elements to allow them to rapidly rise from cooler to higher temperatures, or vice versa.

[0043] For example, a base according to this disclosure may typically have a body that is generally cylindrical and has a diameter larger than the diameter of the semiconductor wafer to which the base is designed to support, for example, greater than 300 mm or 450 mm. The body may have a first side configured to face upwards during processing operations, for example toward the semiconductor wafer supported by the base, and a second side configured to face downwards during processing operations, for example away from the semiconductor wafer.

[0044] Such a base may include one or more heating element segments disposed within the main body and the first cylindrical region, and one or more cooling channel segments disposed within the main body and the second cylindrical region. The first and second cylindrical regions may be located between the first and second sides of the main body, wherein the first cylindrical region is located between the first side and the second cylindrical region, and the second cylindrical region is located between the second side and the first cylindrical region.

[0045] Figure 1 depicts a cross-sectional view of an example of such a base. In Figure 1, a base 104 is depicted. The base 104 may include a body 112 having a first side 114 and a second side 116. A rod 110 is connected to the second side 116 of the body 112, for example via a threaded connector, a threaded flange or other threaded fastener connecting the body 112 to the rod 110, or via welding or other brazed joint. In the depicted example, the rod 110 is brazed to the body 112. The rod 110 may pass through a hole in a base plate housing a chamber (not shown) of the base and may be connected to a vertical lifting system configured to move the rod 110 and body 112 up and down during preparation for or during different wafer processing operations.

[0046] In the implementation shown in Figure 1, the main body 112 is divided into three parts: a first part 112a, a second part 112b, and a third part 112c. These parts 112a, 112b, and 112c can be connected to each other to form a layered structure that forms the main body 112. The layered structure of the main body 112 allows one or more heating element segments 122 to be disposed between the first part 112a and the second part 112b, and one or more cooling channel segments 134 to be disposed between the second part 112b and the third part 112c. As shown, one or more heating element segments 122 are positioned within a first cylindrical region 118, while one or more cooling channel segments 134 are positioned within a second cylindrical region 120. As shown, the first cylindrical region 118 is located between the second cylindrical region 120 and a first side 114 of the main body 112, while the second cylindrical region 120 is located between the first cylindrical region 118 and a second side 116. The first and second cylindrical regions 118 and 120 may share a common central axis and are generally coaxial with the central axis of the base 104, which is nominally perpendicular to the first side 114. In some implementations, the first cylindrical region 118 may have an upper end that coincides with the first side 114 and a lower end that is closer to the first side 114 than any portion of the channel cooling section 134, while the second cylindrical region 120 may have a lower end that coincides with the second side 116 of the body 112 and an upper end that is closer to the second side 116 of the body 112 than the lower end of the first cylindrical region 118.

[0047] In some implementations, the body 112 may include a plurality of lifting pin holes 164 that extend through the body 112, thereby allowing lifting pins (not shown) to extend through the body 112 and past a first side 114 of the body 112 (or allowing the body 112 to be lowered so that the lifting pins (which may remain stationary) can protrude from the first side 114 of the body), thereby allowing a semiconductor wafer (also not shown) supported by the base 104 to be lifted away from the first side 114 of the body, or lowered onto the first side 114 of the body 112.

[0048] In some additional or further implementations, the body 112 may also include an internal gas distribution channel 156 for distributing gas (e.g., a non-reactive purge gas) to the underside of a semiconductor wafer supported by a base 104. The gas distribution channel 156 may, for example, be connected to a gas port (not shown, but see the following figures) leading to a first side 114 of the body.

[0049] As previously described, the rod 110 can support the body 112 within the semiconductor processing chamber. However, the rod 110 can also serve as a conduit through which various components can pass. For example, one or more cooling channel segments 134 can be connected to an inlet channel 146 and an outlet channel 148, which are configured to supply cooling fluid to one or more cooling channel segments 134 and receive cooling fluid from one or more cooling channel segments 134, respectively. Similarly, one or more heating element segments 122 can be powered via heating element power lines 144. Wires of one or more thermocouples 132 can also be routed through the rod 110. One or more thermocouples 132 (or other temperature sensors, such as thermistors) can be positioned, for example, in contact with a portion of the body to allow real-time monitoring of the body's temperature. In particular, one or more thermocouples 132 can be connected to the body 112 at one or more locations near the first side 114 of the body 112, thereby allowing the temperature of the body 112 to approach the temperature of the wafer supported by the body 112 to be monitored.

[0050] If the base 104 is equipped with a gas distribution channel 156, the rod 110 may also include a gas supply line for delivering a non-reactive gas to the gas distribution channel 156 for distribution. Alternatively, the interior of the rod 110 may be sealed, wherein the gas distribution channel 156 provides a single exhaust flow path, and such gas simply flows into the interior of the rod 110, for example near the bottom, and then exits the rod 110 via the gas distribution channel 156.

[0051] As is evident from the following figures, the heating element power lines 144 and the inlet channel 146 / outlet channel 148 can be oriented such that there is approximately a 90° phase difference between them. This allows each of the heating element power lines 144, inlet channel 146, and outlet channel 148 to extend downward through different quadrants of the rod 110. In use, the wires of one or more thermocouples 132 may optionally be routed along the center of the rod 110. This configuration allows the rod 110 to be kept in a small diameter, making it suitable for use in devices developed for bases lacking active heating and active cooling systems. It should be understood that other types of temperature sensors, such as thermistors, resistance temperature sensors, etc., can also be used instead of thermocouples, or attached to thermocouples, for the purpose of measuring base temperature.

[0052] It should be understood that while the implementation depicted in Figure 1 is characterized by a multi-piece body 112, other implementations of the body can be manufactured in a manner that requires fewer parts, or even a single piece. For example, the body 112 can be manufactured by additive manufacturing, wherein the third portion 112c and the second portion 112b are formed as a single continuous section, in which one or more cooling channel segments 134 are formed. In a further or additional example, the second portion 112b and the first portion 112a can be similarly formed as a single continuous section around one or more heating element segments 122.

[0053] It should also be understood that one or more of the first part 112a, the second part 112b, and the third part 112c may be multi-layered components or assemblies. For example, the first part 112a may be provided by combining two or more different parts together; for example, a thin ceramic top plate may be bonded to or otherwise attached to a larger aluminum plate, wherein the two parts together form the first part 112a. In some implementations, one or more of the first part 112a, the second part 112b, and the third part 112c may be connected together via threaded fasteners; for example, one of these parts may have a threaded hole through which a threaded fastener (e.g., a screw) may pass. A perforation may be aligned with the threaded hole to allow the threaded fastener to be screwed into the threaded hole, thereby clamping the multiple parts together.

[0054] Figure 2 depicts an isometric cross-sectional view of the base 104 of Figure 1. In Figure 1, the first portion 112a is shown as slightly more than half removed, while the second portion 112b is shown as about one-third removed. One or more heating element segments 122 are shown as removed to the same extent as the second portion 112b, while one or more cooling channel segments 134 are shown as removed to a slightly smaller extent than the second portion 112b.

[0055] As can be seen more clearly in Figure 2, the gas distribution channel 156 (if present) can be connected to the gas port 154, which allows gas (which is delivered to the gas distribution channel 156, for example via the gas inlet 158 ​​near the center of the second and third sections 112b / c) to be distributed to a location in the first side 114 of the body 112.

[0056] As shown in Figure 2, one or more cooling channel segments 134 are tubular, for example, provided using stainless steel tubes with an annular cross-section, which have been bent to follow a specific path. Therefore, one or more cooling channel segments 134 can be structures that are separate from or spaced apart from the body 112 but confined within the body 112. However, as previously mentioned, other implementations can simply provide one or more cooling channel segments by directly forming features in the material of the body 112.

[0057] Similarly, heating element segment 122 can be one or more components that are separate from but embedded within the body 112. For example, heating element segment 122 can be a resistance heating element, a portion of a resistance heating element, or a resistance heating element constrained within a channel or groove provided in the first portion 112a and / or the second portion 112b. As shown, heating element segment 122 has a U-shaped or D-shaped profile within the first cylindrical region 118, allowing it to conform to a U-shaped or D-shaped heating element channel machined into the first portion 112a. This provides good thermal contact between one or more heating element segments 122 and the body 112. In other implementations, the resistance heating element(s) located at the center of one or more heating element segments may have rounded corners. In some implementations, an epoxy resin or other liquid material that can be cured into a solid or non-liquid phase may be applied to the interface between one or more heating element segments 122 and the first portion 112a and / or the second portion 112b to fix one or more heating element segments 122 relative to the body 112 and to provide a more thermally conductive interface between one or more heating element segments 122 and the body 112.

[0058] Figure 3 depicts one or more spaced-out heating element segments 122 and one or more cooling channel segments 134, i.e., without a main body 112. As shown, one or more heating element segments 122 and one or more cooling channel segments 134 follow paths located in two parallel planes 117a and 117b, respectively, and these paths meander through a circular area surrounded by the main body 112. It should be understood that the specific paths followed by the heating element segments 122 and cooling channel segments 134 depicted in the exemplary base 104 represent a specific configuration that can provide optimal or near-optimal thermal uniformity and thermal transient behavior.

[0059] Figures 4A to 6B depict top and bottom views of each portion 112a, 112b, and 112c, respectively. For example, Figure 4A shows the first side 114a of the first portion 112a, while Figure 4B shows the second side 116a of the first portion 112a. As shown in Figure 4A, the first side 114a of the first portion 112a serves as the first side 114 of the main body 112, and has a wafer recess 162 in the center. The wafer recess 162 can be, for example, a circular recessed area in the center of the first side 114 of the main body 112, with a size slightly larger than the diameter of the semiconductor wafer, which will be supported by the base 104. In other implementations, the wafer recess 162 may be absent, or it may have a raised circular area with a size approximately the same diameter, since such a semiconductor wafer can be disposed on the first side 114 of the main body 112. The riser pin hole 164 and gas port 154 discussed above are also visible in Figure 4A.

[0060] As shown in Figure 4B, the second side 116a of the first portion 112a has a heating element channel 150 machined or formed therein, which accommodates one or more heating element segments 122 (not explicitly shown here, but understood to exist within the heating element channel 150). In some implementations, it may include multiple arc-shaped heating element segments. In some implementations, two or more, or possibly all, of the arc-shaped heating element segments may be concentric with each other. For example, the arc-shaped heating element segments 122 may include a first arc-shaped heating element segment 124a extending along a first arc-shaped heating path 126a, a second arc-shaped heating element segment 124b extending along a second arc-shaped heating path 126b, and a third arc-shaped heating element segment 124c extending along a third arc-shaped heating path 126c. In such an implementation, the radius of the first arc-shaped heating path 126a may be smaller than the radii of the second arc-shaped heating path 126b and the third arc-shaped heating path 126c; in some further implementations, the second arc-shaped heating path 126b and the third arc-shaped heating path 126c may be equal.

[0061] In some further implementations, the plurality of arc-shaped heating elements may further include a fourth arc-shaped heating element segment 124d extending along the fourth arc-shaped heating path 126d and a fifth arc-shaped heating element segment 124e extending along the fifth arc-shaped heating path 126e. In such implementations, the radii of the second arc-shaped heating path 126b and the third arc-shaped heating path 126c may be smaller than the radii of the fourth arc-shaped heating path 126d and the fifth arc-shaped heating path 126e. In some such implementations, the radii of the fourth arc-shaped heating path 126d and the fifth arc-shaped heating path 126e may be equal.

[0062] In some cases, the various arc-shaped heating element segments discussed above can be joined by bridging heating element segments 128 that extend between the endpoints of paired arc-shaped heating paths 126a~c or 126a~e, thereby forming a continuous chain of heating element segments 122.

[0063] Figure 5A shows the first side 114b of the second portion 112b. The riser pin hole 164 extends through the body 112 and is therefore also present in the second portion 112b, as shown in Figure 5A. A gas distribution channel 156 is also visible in Figure 5A; in this example, the gas distribution channel 156 includes a circular portion and three radial portions, which can be used to distribute non-reactive gas to the underside of a semiconductor wafer disposed on the first side 114b of the body 112. Such non-reactive gas can be introduced into the gas distribution channel 156 via, for example, one or more gas inlets 158.

[0064] Figure 5B shows the second side 116b of the second portion 112b. Somewhat similar to the heating element channel 150 of the first portion 112a, the second portion 112b has a cooling channel 152 machined or formed in the second side 116b of the second portion 112b. The cooling channel 152 may accommodate one or more cooling channel segments 134 (not explicitly shown here, but to be understood as existing within the cooling channel 152), and in some implementations, the cooling channel segments 134 may include multiple arcuate cooling channel segments 134. In some such implementations, two or more, or sometimes all, of the arcuate cooling channel segments 134 may be concentric with each other. For example, the arcuate cooling channel segments 134 may include a first arcuate cooling channel segment 136a extending along a first arcuate cooling path 138a and a second arcuate cooling channel segment 136b extending along a second arcuate cooling path 138b. In such implementations, the first arcuate cooling path 138a may have a smaller radius than the second arcuate cooling path 138b.

[0065] In some implementations, the multiple arc-shaped cooling channel segments may further include a third arc-shaped cooling channel segment 136c extending along the third arc-shaped cooling path 138c. In such an implementation, the second arc-shaped cooling path 138b may have a radius smaller than the radius of the third arc-shaped cooling path 138c.

[0066] In some cases, the various arcuate cooling channel segments discussed above can be joined by bridging cooling channel segment 140, which extends between the endpoints of paired arcuate cooling paths 138a and 138b or arcuate cooling paths 138a~c, thereby forming a continuous chain of cooling channel segments 134.

[0067] In the depicted example, coolant can flow into multiple cooling channel segments 134, such that coolant flows into a third arc-shaped cooling channel segment 136c, and then into a second arc-shaped cooling channel segment 136b, and then into a first arc-shaped cooling channel segment 136a. This configuration provides a greater amount of cooling near the periphery of the second portion 112b and a reduced amount of cooling near the center of the second portion 112b.

[0068] Figure 6A depicts a top view of the first side 114c of the third part 112c, while Figure 6B depicts a bottom view of the second side 116c of the third part 112c. As can be seen, the lifting pin hole 164 also extends through the third part 112c.

[0069] As previously described, the first portion 112a, the second portion 112b, and the third portion 112c can be joined or otherwise fused together, for example by brazing or bonding, such that the first portion 112a, the second portion 112b, and the third portion 112c effectively form a continuous thermal mass, thereby allowing rapid heat transfer from one or more heating element segments 122 to one or more cooling channel segments. Figures 7 and 8 show isometric exploded views of the base 104, illustrating how one or more heating element segments 122 can be inserted into the heating element channel 150, and how one or more cooling channel segments 134 can be inserted into the cooling channel 152, before the first portion 112a, the second portion 112b, and the third portion 112c are joined together and connected to the rod 110.

[0070] It should be understood that although both the heating element channel 150 and the cooling channel 152 are shown to be located in the second sides 116a and 116b of the first portion 112a and the second portion 112b, either or both of the heating element channel 150 and the cooling channel 152 may be located in the first sides 114b and / or 114c of the second portion 112b and the third portion 112c, respectively. In some implementations, either or both of the heating element channel 150 and the cooling channel 152 may be formed in both the first portion 112a, the second portion 112b, and the first sides 114b and 114c of the first portion 112a and the second sides 116a and 116b.

[0071] The main body 112 of the base 104 (e.g., first part 112a, second part 112b, and third part 112c, if a multi-piece main body 112 is used) can be made of, for example, an aluminum alloy. The high thermal conductivity of aluminum allows heat to be rapidly transferred into or out of the body, thus allowing for rapid temperature changes.

[0072] The coolant flowing through one or more cooling passages can be, for example, a liquid such as water, ethylene glycol, or a perfluorinated, inert, polyether liquid such as Galden® (supplied by the Solvay Specialty Polymers).

[0073] The substrates discussed herein can be used in semiconductor processing chambers, where the substrate must be able to support a wide range of temperatures. For example, during one stage of a semiconductor process, the substrate may need to be able to be heated (or its wafer support surface may be heated) to up to 400°C, but during another stage of the semiconductor process (e.g., when the wafer remains on the substrate between the two stages), it may also need to be cooled to much lower temperatures, such as 10°C, 40°C, or 50°C. Such temperatures may need to be reached while the chamber housing itself (or its inner walls) is maintained at higher temperatures (e.g., 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, or 150°C). By incorporating heating and cooling functions within the substrate, such as those disclosed herein, the substrate can have the ability to provide a substrate temperature, for example, the temperature described above when used in a high-temperature chamber, for example, a chamber whose chamber wall temperature is higher than the desired substrate temperature during some stages of semiconductor processing.

[0074] This configuration also offers several additional benefits. For example, when power to one or more heating element segments 122 is reduced or stopped, for instance, to lower the temperature of the first side 114 of the body 112, cooling provided by one or more cooling channel segments 134 can be used to more quickly lower the temperature of the first portion 112a and the first side 114 of the body 112. Similarly, when it is desired to heat the first side 114 of the body 112, the flow of coolant through one or more cooling channel segments 134 can be reduced or slowed to reduce the amount of active cooling provided by one or more cooling channel segments 134, thereby allowing the heat provided by one or more heating element segments 122 to heat the first side 114 of the body 112 more effectively. This allows the first side 114 of the body 112 to be heated rapidly from a lower temperature to a higher temperature. The base 104, including these features, can be used in semiconductor processing tools where semiconductor processing operations are used to process semiconductor wafers, which require sequential operations performed on the semiconductor wafers at different temperatures. In such a process, the time required to raise or lower the temperature of such a semiconductor wafer can be a significant contributor to the total time required to complete the semiconductor processing operation. In this case, using a base 104 with features such as those described above allows for faster execution of such heating and / or cooling operations, thereby reducing the contribution of such heating / cooling to the total time required to complete the semiconductor processing operation. This reduces the total duration of such semiconductor processing operations, allowing more semiconductor wafers to be processed within the same time window, and increasing wafer throughput.

[0075] Another advantage is that when power is applied to one or more heating element segments 122 to generate heat, coolant can simultaneously flow through one or more cooling channel segments 134. This has the effect of drawing heat away from one or more heating element segments 122, which is directed to the area of ​​the body 112 located between one or more heating element segments 122 and one or more cooling channel segments 134, thereby allowing the first side 114 of the body 112 to be heated to a relatively high temperature, such as 200°C to 400°C, while the other parts of the body 112 remain at a lower temperature. This allows the temperature of the rod 110 to be maintained below the temperature of the top of the body 112. This avoids potentially dangerous situations where the rod 110 (which may protrude from the bottom of the chamber) is at a temperature that is considered dangerous to humans who may be nearby, or a temperature that may pose a risk to components near the rod 110, such as resilient seals or other nearby components that could be damaged, for example, melted, when exposed to high temperatures.

[0076] Compared to the precision achievable with other types of pedestal heating systems, such pedestals can also be used to heat wafers to desired temperatures with higher accuracy, especially in the context of certain types of semiconductor processing chambers and processes where pedestal temperatures (and therefore wafer temperatures) may need to be maintained at relatively low levels, for example, between 50°C and 200°C. In many cases where heated pedestals are used in semiconductor processing chambers, the target operating temperature of such pedestals is expected to be in the range of 300°C to 400°C or higher. Such high temperatures typically exceed the temperature range at which heat transfer fluids suitable for semiconductor processing systems (such as Galden® (maximum temperature below 300°C) or ethylene glycol (maximum temperature below 200°C)) can operate without performance degradation or other damage. Therefore, pedestals designed to operate at such high temperatures typically utilize resistance heating elements to achieve and maintain these temperatures.

[0077] Meanwhile, the surrounding environment, such as the processing chamber and / or other components within it, is typically at a much lower temperature, for example, 100°C to 300°C lower. Due to the large temperature difference between such a base and its surroundings, significant heat transfer occurs through radiation, convection, and conduction mechanisms (especially radiation). Therefore, the temperature control system for the base must operate continuously to maintain it at the desired target temperature, as heat transferred to the base via the integrated heater system will dissipate rapidly due to the large temperature difference. To maintain such a base at the desired target temperature, the resistance heater system in such a base is typically energized until the base temperature rises to a specified upper temperature critical value (e.g., measured by one or more temperature sensors in the base), at which point the power to the resistance heater system is stopped. At this point, the base will begin to cool, and when the base temperature reaches a specified lower temperature critical value, the resistance heater can be energized again, and the cycle repeats. Due to the rapid heat loss in such a system, the resistance heater can typically operate at high duty cycles, and any temperature overshoot that may occur at the end of the duty cycle may require a relatively short time to fall back to the target temperature range.

[0078] However, when such a base is used in a lower temperature range (e.g., 50°C to 200°C), the heat transfer rate (and particularly the radiative heat transfer rate) may be much lower at the higher temperatures discussed above. Therefore, to maintain such low temperatures, far fewer resistance heaters may be required. Unexpectedly, it is also more difficult to precisely maintain such a base (e.g., an aluminum base) at a specific target temperature within such a lower temperature range, because any temperature overshoot that may occur may take a much longer time to fall back into the target temperature range, due to the reduced cooling rate of such a base at such low temperatures. Consequently, due to overshoot, the base temperature will be higher than the desired target temperature for a larger proportion of the time, as is typically the case when the base in question is maintained at much higher temperatures (e.g., 300°C or higher).

[0079] However, the base discussed herein can be operated to provide highly stable temperature control at relatively low elevated temperatures (e.g., in the range of 50°C to 200°C). For example, if the coolant flowing through the cooling channel section is maintained at a temperature slightly lower than the target temperature, such as within 50°C of the target temperature and below the target temperature, within 40°C of the target temperature and below the target temperature, within 30°C of the target temperature and below the target temperature, within 20°C of the target temperature and below the target temperature, within 15°C of the target temperature and below the target temperature, within 14°C of the target temperature and below the target temperature, within 13°C of the target temperature and below the target temperature, within 12°C of the target temperature and below the target temperature, within 11°C of the target temperature and below the target temperature, and at the target temperature... If the temperature difference is within 10°C and below the target temperature, within 9°C and below the target temperature, within 8°C and below the target temperature, within 7°C and below the target temperature, within 6°C and below the target temperature, or within 5°C and below the target temperature, the coolant can rapidly cool the base even if the base temperature overshoots the target temperature due to heating provided by the resistance heater (this is also true at temperatures close to the target temperature, for example, within 5°C and below the target temperature, or within 10°C and below the target temperature). In some implementations, the coolant can be additionally maintained at least 5°C below the target temperature.

[0080] In many cases, the coolant passage section and the heater section can actually operate as a two-stage temperature control system. For example, the coolant passage section can act as a first temperature control mechanism, functioning as a heater when the temperature of the base material in the area surrounding the coolant passage section is lower than the coolant temperature, and as a cooler when the temperature of the base material in the area surrounding the coolant passage section is higher than the coolant temperature. Similarly, the heater section can act as a second temperature control mechanism, typically functioning only under heating capacity, for example, capable of adding heat to the base but not removing heat from the base.

[0081] In this implementation, a first temperature control mechanism can be used to perform main heating of the substrate to bring it to a temperature close to but not exceeding a target temperature, for example, within 10°C of the target temperature. A second temperature control mechanism can then be used to transfer additional heat to the substrate to further heat it to the target temperature, for example, by heating it to a final 10°C. In cases where the second temperature control mechanism, i.e., the heater section, transfers excessive power to the substrate, causing the substrate temperature to exceed the target temperature, the first temperature control mechanism can then remove the excess heat from the substrate to cool it to the target temperature more quickly. This reduces the time the substrate temperature may exceed the target temperature compared to situations achievable without the first temperature control mechanism and results in a more stable temperature at the wafer-substrate interface.

[0082] The first temperature control mechanism effectively provides a temperature control system capable of relatively quickly heating and cooling the substrate to the coolant temperature. However, due to the difficulty in rapidly changing the coolant, it may have lower accuracy in addressing potential transient heating or cooling events within the substrate. Therefore, the first temperature control mechanism itself will provide relatively poor temperature control. For example, if only the first temperature control mechanism is used to maintain the substrate at the target temperature, the process conditions within the chamber (which cause additional heat to be temporarily transferred to the substrate for a period of time, such as from plasma that may form above the substrate) may require a slight decrease in coolant temperature to transfer the increased heat load. However, this can take time because the coolant is typically supplied from an external reservoir or source containing a volume several times larger than the volume of coolant within the cooling channel section at any given time. Changing the coolant temperature usually requires heating or cooling the entire coolant volume, which takes time.

[0083] In comparison, the second temperature control mechanism offers a faster response time and can switch between heating and non-heating modes much faster than the first temperature control mechanism. However, the second temperature control mechanism can only provide a fast response time for heating, not for cooling.

[0084] By integrating the first and second temperature control mechanisms into the base, the advantages of both temperature control mechanisms can be utilized to provide an integrated temperature control system that can provide a rapid response for heating and cooling, even at low temperatures where radiative cooling results in a much lower amount of heat loss.

[0085] Figures 9 and 10 depict schematic diagrams of a semiconductor processing tool, characterized by a base as shown in Figure 1. The semiconductor processing tool may include a semiconductor processing chamber 102 having an internal volume accommodating a nozzle 106 and a base 104. A rod portion of the base 104 may extend through a hole in the bottom of the semiconductor processing chamber 102 and, in some cases, may be connected to a vertical lifting mechanism 109, which may be controlled to raise and / or lower the base 104 relative to the semiconductor processing chamber 102. Figure 9 depicts the base 104 in a lowered position relative to the semiconductor processing chamber 102, and Figure 10 depicts the base 104 in a raised position relative to the semiconductor processing chamber 102. For example, the semiconductor processing chamber 102 may include a lifting pin 121 extending upward through a lifting pin hole 164 in the base 104. When the pedestal 104 is in the lowered position, the lifting pin 121 can be used to support the semiconductor wafer 123, thereby providing a gap between the semiconductor wafer 123 and the pedestal 104 into which the end effector (not shown) of a wafer processing robot can be inserted to place or remove the semiconductor wafer from the semiconductor processing chamber 102. When the pedestal is in the raised position, as shown in FIG10, the semiconductor wafer 123 can alternatively be placed directly on the first side 114 of the body 112 of the pedestal 104. One or more process gases can then flow across the semiconductor wafer 123 via a nozzle 106, for example, the nozzle 106 may have a plurality of small gas distribution ports distributed on its underside for delivering such process gases across the semiconductor wafer 123 during wafer processing operations. In some implementations, the nozzle 106 and / or the base 104 can be used as electrodes to deliver radio frequency power to a gas that may be in the gap between the nozzle 106 and the base 104, thereby allowing the generation of plasma for use during wafer processing operations.

[0086] Gases introduced into the semiconductor processing chamber 102 during wafer processing operations can be discharged from the semiconductor processing chamber 102 via an exhaust system. For example, the semiconductor processing chamber 102 may have an annular exhaust chamber 103 located below the base 104, to which a vacuum pump 105 is connected, thereby allowing the gas to be extracted from the semiconductor processing chamber 102 in a substantially uniform azimuth.

[0087] As described above, the base 104 can be configured to move vertically up and down relative to the semiconductor processing chamber 102. A bellows seal 111 may be provided to form a seal between the semiconductor processing chamber 102 and the rod 110 (or a component connected thereto). In this example, the rod 110 is connected to a base plate covering the rod 110, thereby sealing the internal volume of the rod 110 such that the non-reactive gas supplied by the non-reactive gas source 107 and introduced into the rod 110 must flow upward through the rod 110 and out of the base 104 via a gas port 154 in the first side 114 of the body 112 of the base 104. However, in other implementations (e.g., where no non-reactive gas is supplied to the body 112, or where non-reactive gas is supplied to the body 112, but via a gas feed line extending to the body 112), the rod 110 may be open at the bottom, for example, balanced with the surrounding atmosphere.

[0088] Inlet passage 146 and outlet passage 148 may be fluidly connected to coolant reservoir 115 (which may include a heat exchanger). Coolant pump 113 may be connected to one of inlet passage 146 and outlet passage 148 and is used to circulate coolant from coolant reservoir 115 through one or more cooling passage segments 134 of base 104.

[0089] Similarly, the heating element power line 144 may be electrically connected to the power source 119. Relays or other power regulation devices may be included to allow the controller 101 to control the electrical power directed to one or more heating element segments 122. The controller 101 may also be communicatively connected to the coolant pump 113 to allow the controller 101 to control the flow of coolant through one or more coolant passage segments. If present, one or more thermocouples 132 may also be communicatively coupled to the controller 101. For example, the controller may control the coolant pump 113 and the power delivery toward one or more heating element segments to cool, heat, or maintain the base 104 at or to a specific temperature.

[0090] In some implementations, such as atomic layer etching tools, the body 112 and / or the rod 110 may be coated with an anti-corrosion coating to reduce the possibility of metal contamination on the wafer being processed, which results from the etching away of material from the body 112 and / or the rod 110. Such a coating may include, for example, an anodized coating, such as a hard anodized coating, a plating, or a material coating applied by atomic layer deposition, for example, formed in a separate chamber or in the same chamber as the chamber processing the wafer. In some cases, such a coating may include a silicon oxide coating, an aluminum oxide coating, or other ceramic coatings. In still other cases, such a coating may include a plating, such as a nickel plating.

[0091] Depending on the processing requirements and / or system type, controller 101 can be programmed to control any process disclosed herein, such as the process of the control base, as well as other processes or parameters not discussed herein, such as process gas delivery, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into and out of chambers connected to or docked with specific systems, and other transfer tools and / or loading locks.

[0092] For example, the controller can be configured to maintain the base temperature at a setpoint temperature or temperature range (hereinafter referred to as setpoint temperature, which should be understood as a single desired temperature or desired temperature range) between 50°C and 200°C, as discussed above. The setpoint temperature can be, for example, the following temperatures or temperature ranges: 50°C to 55°C, 55°C to 60°C, 60°C to 65°C, 65°C to 70°C, 70°C to 75°C, 75°C to 80°C, 80°C to 85°C, 85°C to 90°C, 90°C to 95°C, 95°C to 100°C, 100°C to 105°C, 105°C to 110°C, 110°C to 115°C, 115°C to 120°C, or 120°C to 125°C. The following temperatures are allowed: 125℃~130℃, 130℃~135℃, 135℃~140℃, 140℃~145℃, 145℃~150℃, 150℃~155℃, 155℃~160℃, 160℃~165℃, 165℃~170℃, 170℃~175℃, 175℃~180℃, 180℃~185℃, 185℃~190℃, 190℃~195℃, or 195℃~200℃.

[0093] For this purpose, the controller may place one or more heat exchangers and / or one or more heaters and / or one or more coolers (forming, for example, a temperature control system) at or connected to the reservoir 115 to heat and / or cool the coolant in the reservoir to a temperature no more than 50°C below a setpoint temperature or temperature range, for example, within 40°C and below the setpoint temperature or temperature range; within 30°C and below the setpoint temperature or temperature range; within 20°C and below the setpoint temperature or temperature range; within 15°C and below the setpoint temperature or temperature range; within 14°C and below the setpoint temperature or temperature range; within 13°C and below the setpoint temperature or temperature range; within 12°C and below the setpoint temperature or temperature range. The temperature difference from the setpoint temperature or temperature range is within 11℃ and lower than the setpoint temperature or temperature range; the temperature difference from the setpoint temperature or temperature range is within 10℃ and lower than the setpoint temperature or temperature range; the temperature difference from the setpoint temperature or temperature range is within 9℃ and lower than the setpoint temperature or temperature range; the temperature difference from the setpoint temperature or temperature range is within 8℃ and lower than the setpoint temperature or temperature range; the temperature difference from the setpoint temperature or temperature range is within 7℃ and lower than the setpoint temperature or temperature range; the temperature difference from the setpoint temperature or temperature range is within 11℃ and lower than the setpoint temperature or temperature range; the temperature difference from the setpoint temperature or temperature range is within 11℃ and lower than the setpoint temperature or temperature range; the temperature difference from the setpoint temperature or temperature range is within 10℃ and lower than the setpoint temperature or temperature range; the temperature difference from the setpoint temperature or temperature range is within 7℃ and lower than the setpoint temperature or temperature range; the temperature difference from the setpoint temperature or temperature range is within 1 ... Temperatures within 6°C and below the setpoint temperature or temperature range, and within 5°C and below the setpoint temperature or temperature range (regarding the coolant being heated and / or cooled to within X°C and below the temperature range, it should be understood that this includes heating or cooling the coolant to X°C below the setpoint temperature, or X°C below the lower limit of the setpoint temperature range, and heating or cooling to a temperature within X°C below the lower limit of the setpoint temperature or temperature range). In a particular implementation, the controller may house or connect a heat exchanger and / or heater in or to the reservoir 115 to heat and / or cool the coolant in the reservoir to temperatures not exceeding 20°C below the setpoint temperature or temperature range, for example, temperatures 10°C below the setpoint temperature or temperature range.

[0094] The controller may also control power supply 119 or, for example, relays or contactors 125 to control the application of power to one or more heating element segments 122 within the base. For example, the controller may control the application of power to one or more heating element segments 122 such that when the measured temperature of the base 104, as measured by, for example, thermocouple 132 or a similar temperature sensor, is below a specified first critical temperature (e.g., higher than the temperature at which the coolant is controlled, and lower than the setpoint temperature or temperature range), power is applied to one or more heating element segments 122 until the temperature sensors indicate that a second critical temperature has been reached, such as the setpoint temperature or a temperature associated with a setpoint temperature range (e.g., the upper limit of the setpoint temperature range). In some cases, the first critical temperature may be the lower limit of the setpoint temperature range (if a range is used), and the second critical temperature may be the upper limit of the setpoint temperature range. In other implementations, the first and / or second critical temperatures may be set above the lower end and below the upper end of the setpoint temperature range, respectively.

[0095] In a broad sense, a controller can be defined as an electronic device that has various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. Integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some examples, operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0096] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or be all or part of a fab host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool, to which the controller is configured to interface with or control the tool. Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose (such as the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on-site communicating with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control the process on-site.

[0097] Without limitation, the exemplary base according to this disclosure may be installed in or in part of a semiconductor processing tool having a plasma etching chamber or module, a deposition chamber or module, a rotary rinsing chamber or module, a metal plating chamber or module, a cleaning chamber or module, a chamfering edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0098] As described above, depending on one or more processing steps to be performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the plant, a host computer, another controller, or tools used in the transport of materials to and from the tool location and / or loading port in the semiconductor manufacturing plant.

[0099] Any ordinal designations used in this disclosure and claims (if any), such as (a), (b), (c)... or (1), (2), (3)... or similar, should be understood not to express any particular order or sequence unless such order or sequence is expressly indicated. For example, if there are three steps labeled (i), (ii), and (iii), it should be understood that the steps may be performed in any order (or even simultaneously, if there are no other restrictions), unless otherwise specified. For example, if step (ii) involves the operation of an element produced in step (i), then step (ii) can be considered to occur at some point after step (i). Similarly, if step (i) involves the operation of an element produced in step (ii), it should be understood to be the opposite. It should also be understood that the use of the ordinal designation “first” (e.g., “first item”) herein should not be construed as implying or inherently suggesting that there must be a “second” case (e.g., “second item”).

[0100] It should be understood that the phrases “for each of one or more items,” “for each of one or more items,” etc., if used herein, include both single-item groups and multi-item groups; that is, the use of the phrase “for each” means that it is used in programming languages ​​to refer to each item in any group of items referenced. For example, if the group of items referenced is a single item, “each” will refer only to that single item (although the dictionary definition of “each” often defines the term as “each of two or more things”), and does not mean that there must be at least two of these items. Similarly, the terms “set” or “subset” should not be considered by themselves to necessarily cover multiple items—it should be understood that a set or subset may cover only one or more members (unless the context otherwise indicates otherwise).

[0101] Unless otherwise specified, when the term “between” is used in conjunction with a range of numbers as used herein, it should be understood to include both the beginning and end of the range. For example, “between 1 and 5” should be understood to include the numbers 1, 2, 3, 4, and 5, and not just the numbers 2, 3, and 4.

[0102] The term "operably connected" should be understood to refer to a state in which two components and / or systems are directly or indirectly connected so that, for example, at least one component or system can control the other. For example, a controller can be described as operably connected to a resistance heating unit, comprising a controller connected to a sub-controller of the resistance heating unit, the sub-controller being electrically connected to a relay configured to controllably connect or disconnect the resistance heating unit from a power source capable of supplying electrical power to the resistance heating unit to produce a desired degree of heating. Because current is involved, the controller itself may not be able to directly supply such power to the resistance heating unit, but it should be understood that the controller is still operably connected to the resistance heating unit.

[0103] It should be understood that the examples and implementations described herein are for illustrative purposes only, and various modifications or variations will arise in the minds of those skilled in the art based on them. Although various details have been omitted for clarity, various design alternatives may be implemented. Therefore, the examples presented herein are to be considered illustrative rather than restrictive, and this disclosure is not limited to the details set forth herein, but rather can be modified within the scope of this disclosure.

[0104] It should be understood that while the above disclosure focuses on one or more specific exemplary implementations, it is not limited to the examples discussed, but is also applicable to similar variations and mechanisms, and such similar variations and mechanisms are also considered to fall within the scope of this disclosure.

[0105] Specifically, this disclosure relates at least to the following numbered implementations, but may also include other implementations that are obvious from the above discussion but are not listed herein. However, this disclosure relates at least to the following numbered implementations.

[0106] Implementation Option 1: An apparatus including a base configured to support a semiconductor wafer during semiconductor processing operations, the base comprising: a body having a first side and a second side, the second side being opposite to the first side of the body; one or more heating element segments disposed within the body and in a first cylindrical region; one or more cooling channel segments disposed within the body and in a second cylindrical region; and a rod connected to the second side of the body, wherein the first cylindrical region is inserted between the second cylindrical region and the first side of the body, and the second cylindrical region is inserted between the first cylindrical region and the second side of the body.

[0107] Implementation scheme 2: According to the device described in implementation scheme 1, wherein the one or more heating element segments are multiple heating element segments, and the multiple heating element segments include multiple arc-shaped heating element segments.

[0108] Implementation scheme 3: According to the device described in implementation scheme 2, the arc-shaped heating element segments are concentric with each other.

[0109] Implementation Scheme 4: According to the device described in Implementation Scheme 2, the plurality of arc-shaped heating element segments include a first heating element segment extending along a first arc-shaped heating path, a second heating element segment extending along a second arc-shaped heating path, and a third heating element segment extending along a third arc-shaped heating path, wherein the radius of the first arc-shaped heating path is smaller than the radius of the second arc-shaped heating path and smaller than the radius of the third arc-shaped heating path.

[0110] Implementation scheme 5: According to the device described in implementation scheme 4, wherein the first arc-shaped heating path, the second arc-shaped heating path, and the third arc-shaped heating path are concentric with each other.

[0111] Implementation Scheme 6: According to the apparatus described in Implementation Scheme 4, the radius of the second arc-shaped heating path is equal to the radius of the third arc-shaped heating path.

[0112] Implementation Scheme 7: According to the device described in Implementation Scheme 3, the plurality of heating element segments further includes a fourth heating element segment extending along a fourth arc-shaped heating path and a fifth heating element segment extending along a fifth arc-shaped heating path, and the radius of the second arc-shaped heating path and the radius of the third arc-shaped heating path are smaller than the radius of the fourth arc-shaped heating path and the radius of the fifth arc-shaped heating path.

[0113] Implementation scheme 8: According to the device described in implementation scheme 7, wherein the first arc-shaped heating path, the fourth arc-shaped heating path, and the fifth arc-shaped heating path are concentric with each other.

[0114] Implementation scheme 9: According to the device described in implementation scheme 7, the radius of the fourth arc-shaped heating path is equal to the radius of the fifth arc-shaped heating path.

[0115] Implementation Scheme 10: The apparatus according to any one of Implementation Schemes 7 to 9, wherein the first arc-shaped heating path, the second arc-shaped heating path, the third arc-shaped heating path, the fourth arc-shaped heating path and the fifth arc-shaped heating path at least partially define a plurality of arc-shaped heating paths, and wherein the plurality of heating element segments further includes a plurality of bridging heating element segments, each bridging heating element segment extending between corresponding endpoints of a pair of adjacent arc-shaped heating paths in the plurality of arc-shaped heating paths.

[0116] Implementation scheme 11: The apparatus according to any one of implementation schemes 1 to 10, wherein the one or more cooling channel segments are multiple cooling channel segments, and the multiple cooling channel segments include multiple arc-shaped cooling channel segments.

[0117] Implementation scheme 12: According to the apparatus of implementation scheme 11, wherein the arc-shaped cooling channel segments are concentric with each other.

[0118] Implementation scheme 13: The apparatus according to implementation scheme 11 or implementation scheme 12, wherein the plurality of cooling channel segments include a first cooling channel segment extending along a first arc-shaped cooling path and a second cooling channel segment extending along a second arc-shaped cooling path; the first arc-shaped cooling path and the second arc-shaped cooling path are concentric with each other, and the radius of the first arc-shaped cooling path is smaller than the radius of the second arc-shaped cooling path.

[0119] Implementation scheme 14: According to the apparatus of implementation scheme 13, wherein the first arc-shaped cooling path and the second arc-shaped cooling path are concentric with each other.

[0120] Implementation scheme 15: The apparatus according to implementation scheme 13 or implementation scheme 14, wherein the plurality of cooling channel segments further includes a third cooling channel segment extending along a third arc-shaped cooling path, the first arc-shaped cooling path and the third arc-shaped cooling path are concentric with each other, and the radius of the second arc-shaped cooling path is smaller than the radius of the third arc-shaped cooling path.

[0121] Implementation scheme 16: According to the apparatus of implementation scheme 15, the first arc-shaped cooling path and the third arc-shaped cooling path are concentric with each other.

[0122] Implementation Scheme 17: According to the apparatus of Implementation Scheme 15, wherein the first arc-shaped cooling path, the second arc-shaped cooling path and the third arc-shaped cooling path at least partially define a plurality of arc-shaped cooling paths, and the plurality of cooling channel segments further include a plurality of bridging cooling channel segments, each bridging cooling channel segment extending between the endpoints of two arc-shaped cooling paths in the plurality of arc-shaped cooling paths.

[0123] Implementation 18: An apparatus according to any one of implementations 1 to 17, wherein the main body comprises: a first portion having a first side and a second side; a second portion having a first side and a second side; and a third portion having a first side and a second side, wherein the second portion is inserted between the first portion and the third portion, the first side of the first portion is also the first side of the main body, the second side of the first portion is joined or fused to the first side of the second portion, and the second side of the second portion is joined or fused to the first side of the third portion.

[0124] Implementation 19: The apparatus according to implementation 18, wherein at least one of the second side of the first portion and the first side of the second portion includes a heating element channel, and the heating element channel accommodates the one or more heating element segments.

[0125] Implementation 20: The apparatus according to any one of implementations 1 to 19, wherein the one or more heating element segments have a D-shaped profile.

[0126] Implementation 21: The apparatus according to any one of implementations 18 to 20, wherein at least one of the second side of the second portion and the first side of the third portion includes a cooling channel, and the cooling channel accommodates the one or more cooling channel segments.

[0127] Implementation 22: The apparatus according to any one of implementations 18 to 21, wherein the one or more cooling channel segments are tubular.

[0128] Implementation 23: The apparatus according to implementation 22, wherein one or more cooling channel segments have an annular cross-section.

[0129] Implementation 24: The apparatus according to implementation 10, wherein the second side of the first portion is hard-soldered to the first side of the second portion, and the second side of the second portion is hard-soldered to the first side of the third portion.

[0130] Implementation 25: The apparatus according to any one of implementations 18 to 24, wherein the first part, the second part, and the third part are all made of aluminum alloy.

[0131] Implementation 26: The apparatus according to any one of implementations 1 to 24, wherein the main body is made of aluminum alloy.

[0132] Implementation 27: The apparatus according to any one of implementations 1 to 26 further includes a temperature sensor coupled to the main body.

[0133] Implementation Option 28: The apparatus according to Implementation Option 27 further includes: a power supply; a coolant reservoir having a temperature control system; a coolant pump; and a controller configured to: control the temperature control system to maintain the coolant stored in the coolant reservoir within a first temperature range, the first temperature range being between 5°C and 50°C lower than a setpoint temperature; control the coolant pump to cause the coolant to flow out of the coolant reservoir and through the one or more cooling channel sections; and cause the one or more heating element sections to receive power from the power supply until the temperature sensor indicates that the temperature of the base is at or above the setpoint temperature.

Claims

1. An apparatus for facilitating the processing of a semiconductor wafer, the apparatus comprising: A base configured to support a semiconductor wafer during semiconductor processing operations, the base comprising: A main body having a first side and a second side, wherein the second side is opposite to the first side of the main body; One or more heating element segments are disposed within the main body and within the first cylindrical region; One or more cooling channel segments are disposed within the main body and within the second cylindrical region; and A rod portion, which is connected to the second side of the main body, wherein: The first cylindrical region is inserted between the second cylindrical region and the first side of the main body, and The second cylindrical region is inserted between the first cylindrical region and the second side of the body.

2. The apparatus according to claim 1, wherein: The one or more heating element segments are multiple heating element segments, and The plurality of heating element segments includes a plurality of arc-shaped heating element segments.

3. The apparatus according to claim 2, wherein: The plurality of arc-shaped heating element segments include a first heating element segment extending along a first arc-shaped heating path, a second heating element segment extending along a second arc-shaped heating path, and a third heating element segment extending along a third arc-shaped heating path, and The radius of the first arc-shaped heating path is smaller than the radius of the second arc-shaped heating path and smaller than the radius of the third arc-shaped heating path.

4. The apparatus according to claim 3, wherein: The plurality of heating element segments further includes a fourth heating element segment extending along a fourth arc-shaped heating path and a fifth heating element segment extending along a fifth arc-shaped heating path, and The radius of the second arc-shaped heating path and the radius of the third arc-shaped heating path are smaller than the radius of the fourth arc-shaped heating path and the radius of the fifth arc-shaped heating path.

5. The apparatus according to claim 4, wherein: The first arc-shaped heating path, the second arc-shaped heating path, the third arc-shaped heating path, the fourth arc-shaped heating path, and the fifth arc-shaped heating path at least partially define multiple arc-shaped heating paths, and The plurality of heating element segments also include a plurality of bridging heating element segments, each bridging heating element segment extending between corresponding endpoints of a pair of adjacent arcuate heating paths in the plurality of arcuate heating paths.

6. The apparatus according to claim 5, wherein: The plurality of cooling channel segments include a first cooling channel segment extending along a first arc-shaped cooling path and a second cooling channel segment extending along a second arc-shaped cooling path; The first arc-shaped cooling path and the second arc-shaped cooling path are concentric with each other, and The radius of the first arc-shaped cooling path is smaller than the radius of the second arc-shaped cooling path.

7. The apparatus according to claim 6, wherein: The plurality of cooling channel segments also includes a third cooling channel segment extending along the third arc-shaped cooling path, and The radius of the second arc-shaped cooling path is smaller than the radius of the third arc-shaped cooling path.

8. The apparatus according to claim 7, wherein, The first arc-shaped cooling path and the third arc-shaped cooling path are concentric with each other.

9. The apparatus according to claim 7, wherein: The first arc-shaped cooling path, the second arc-shaped cooling path, and the third arc-shaped cooling path at least partially define multiple arc-shaped cooling paths, and The plurality of cooling channel segments also include a plurality of bridging cooling channel segments, each bridging cooling channel segment extending between the endpoints of two arcuate cooling paths in the plurality of arcuate cooling paths.

10. The apparatus according to any one of claims 1 to 3, wherein the main body comprises: The first part has a first side and a second side; The second part has a first side and a second side; as well as The third part has a first side and a second side, wherein: The second part is inserted between the first part and the third part. The first side of the first part is also the first side of the main body. The second side of the first portion is joined or fused to the first side of the second portion, and The second side of the second part is joined or fused to the first side of the third part.

11. The apparatus according to claim 10, wherein: At least one of the second side of the first portion and the first side of the second portion includes a heating element channel, and The heating element channel accommodates one or more heating element segments.

12. The apparatus according to claim 10, wherein: At least one of the second side of the second portion and the first side of the third portion includes a cooling channel, and The cooling channel accommodates one or more cooling channel segments.

13. The apparatus according to claim 10, wherein, The one or more cooling channel sections are tubular.

14. The apparatus according to claim 10, wherein: The second side of the first portion is hard soldered to the first side of the second portion, and The second side of the second part is hard soldered to the first side of the third part.

15. The apparatus according to claim 10, wherein, The first part, the second part, and the third part are all made of aluminum alloy.

16. The apparatus according to any one of claims 1 to 3, wherein, The one or more heating element segments have a D-shaped cross-section.

17. The apparatus according to claim 16, wherein, The one or more cooling channel segments have an annular cross-section.

18. The apparatus according to any one of claims 1 to 3, wherein, The main body is made of aluminum alloy.

19. The apparatus according to any one of claims 1 to 3, further comprising a temperature sensor, wherein the temperature sensor is coupled to the body.

20. The apparatus of claim 19, further comprising: power supply; A coolant reservoir with a temperature control system; Coolant pump; as well as The controller is configured to: The temperature control system is controlled to maintain the coolant stored in the coolant reservoir within a first temperature range, which is between 5°C and 50°C lower than the setpoint temperature. Control the coolant pump to cause the coolant to flow from the coolant reservoir and through the one or more cooling passage sections; and The one or more heating element segments receive power from the power source until the temperature sensor indicates that the temperature of the base is at or above the setpoint temperature.

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