Plug-in for air inlet of epitaxial chamber

Abstract

The invention discloses a plug-in for an air inlet of an epitaxial cavity, which comprises a shell, and at least one air supply unit is arranged in the shell. The gas supply unit is sequentially divided into a first gas distribution area and a second gas distribution area in the process gas flowing direction. The first gas distribution area is close to a gas supply source, and the second gas distribution area is close to the gas inlet and is provided with an arc-shaped outlet edge. A plurality of guide plates with the same length are arranged in the second gas distribution area at intervals and extend to the edge of the outlet in the process gas flowing direction, so that the second gas distribution area is divided into a plurality of fluid channels. According to the plug-in, the flow guide effect of the plug-in on the process gas can be improved, secondary distribution of the process gas is prevented, and the problem that the epitaxial growth rate of a wafer in an epitaxial cavity is not uniform is solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor epitaxial processes, and more specifically to a plug for an air inlet in an epitaxial chamber. Background Technology

[0002] In epitaxial growth processes, the inserts in the epitaxial equipment are the core components for controlling gas distribution, and their performance directly affects the quality and uniformity of the film deposited on the wafer surface. Please refer to [link / reference]. Figure 1 The existing plug-in 10 has a flow equalizer 20 installed on its inlet side, with multiple flow guide holes 30 for uniformly distributing the process gas flow at the inlet side of the plug-in 10. To accommodate the circular shape of the wafer, the outlet edge of the existing plug-in 10 is arc-shaped, resulting in different flow path lengths from each flow guide hole 30 to the outlet edge of the plug-in 10. This causes the process gas to be redistributed during its journey from each flow guide hole 30 to the outlet edge of the plug-in 10 before entering the wafer surface, leading to non-uniformity of the process gas flow and ultimately affecting the uniformity of the film deposited on the wafer surface. Summary of the Invention

[0003] The purpose of this invention is to provide a plug for the air inlet of an epitaxial chamber, so as to solve the technical problem of uneven process airflow caused by the inconsistent length of the process airflow path from each guide hole on the flow equalizing plate to the outlet edge of the plug due to the arc-shaped outlet edge of the existing plug.

[0004] To achieve the above objectives, the present invention provides a plug for an epitaxial chamber air inlet, comprising:

[0005] A housing, wherein at least one air supply unit is provided inside the housing;

[0006] The gas supply unit is divided into a first gas distribution area and a second gas distribution area along the process gas flow direction; the first gas distribution area is close to the gas supply source, and the second gas distribution area is close to the gas inlet and has an arc-shaped outlet edge.

[0007] The second gas distribution zone is provided with a plurality of guide plates of equal length at intervals. The guide plates extend along the gas flow direction to the edge of the outlet to divide the second gas distribution zone into a plurality of fluid channels.

[0008] Optionally, the spacing between adjacent guide vanes is equal.

[0009] Optionally, the ratio of the maximum length of the housing in the process gas flow direction to the length of the guide plate is 2.

[0010] Optionally, the ratio of the length of the guide vane to the spacing between adjacent guide vanes is greater than 5.

[0011] Optionally, at least one of the guide plates is provided with a slit extending through its thickness, the slit being used to connect fluid channels on both sides of the guide plate; on the cross-section of the guide plate with the slit, the slit includes an inclined section that is at an angle opposite to the fluid flow direction in the fluid channel on the same side and is interconnected with it.

[0012] Optionally, the slit-equipped guide vanes are located in the two side edge regions within the housing.

[0013] Optionally, on adjacent guide plates with slits, the distances from the slits to the edge of the outlet are equal to each other.

[0014] Optionally, the distance between the slit and the edge of the outlet is more than 1 / 3 of the length of the guide plate.

[0015] Optionally, the ratio of the width of the slit to the length of the deflector is 1 / 5.

[0016] Optionally, the gap is an arc-shaped channel or a V-shaped channel; wherein the included angle of the V-shaped channel is less than 150°.

[0017] Optionally, the second gas distribution area is further provided with a baffle plate that is the same length as the guide plate and larger than the width of the guide plate; and the baffle plate is parallel to the guide plate, and the distance between the baffle plate and the guide plate is equal to the distance between adjacent guide plates.

[0018] Optionally, the position of the baffle plate corresponds to the region in the radial section of the wafer whose thickness exceeds the process threshold.

[0019] Optionally, a flow equalizer is installed at the inlet end of the first gas distribution zone, and the flow equalizer has multiple flow guide holes.

[0020] Compared with the prior art, the technical solution of the present invention has at least the following beneficial effects:

[0021] The plug-in of this invention is divided into a first gas distribution zone and a second gas distribution zone along the process gas flow direction, and a guide plate is set in the second gas distribution zone near the epitaxial chamber inlet. By setting a guide structure at the end of the process gas flow path (plug-in outlet side), it can directly act on the inlet flow field of the cavity, and reduce secondary flow caused by flow field inhomogeneity inside the plug-in through momentum correction, thereby maximizing the guiding efficiency. This design allows the process gas to flow in a laminar form in the fluid channel, thereby making the process gas uniformly distributed in the epitaxial chamber, effectively preventing secondary distribution of the process gas, and thus improving the uniformity of the film thickness deposited on the wafer surface.

[0022] This invention provides a guide plate with gaps in the second gas distribution zone. The gaps effectively balance the partial pressure of the process gas in the fluid channels on both sides of the guide plate, reducing pressure fluctuations at the plug-in outlet and ensuring uniform distribution of the process gas in the epitaxial chamber. This provides a reliable guarantee for the uniformity of the film deposited on the wafer surface.

[0023] This invention involves placing a baffle plate within the second gas distribution zone, the position of which corresponds to the region in the wafer's radial cross-section where the thickness exceeds the process threshold. By adjusting the size and layout of the baffle plate, a portion of the process gas can be selectively blocked, thereby controlling the distribution of the process gas in the epitaxial chamber and effectively suppressing the problem of excessively rapid epitaxial growth in localized areas of the wafer. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the existing plugin structure.

[0025] Figure 2 This is a schematic diagram of the epitaxial device.

[0026] Figure 3 This is a first-view structural schematic diagram of the plug-in for the air inlet of the epitaxial chamber according to the present invention.

[0027] Figure 4 This is a schematic diagram of the plug-in for the air inlet of the epitaxial chamber described in this invention from a second perspective.

[0028] Figure 5 This is a schematic diagram showing that the housing of the insert for the air inlet of the extended chamber described in this invention has a guide plate with gaps.

[0029] Figure 6 This is a schematic diagram showing that the housing of the insert for the air inlet of the extended chamber described in this invention has an air baffle plate.

[0030] Figure 7 This is a diagram showing the thickness distribution of the film deposited on the wafer surface during epitaxial growth using existing plug-ins.

[0031] Figure 8 This is a thickness distribution diagram of the film layer deposited on the wafer surface during epitaxial growth using the plug-in of the present invention.

[0032] In the picture,

[0033] 10 - Existing plug-in, 20 - Flow equalizer, 30 - Flow guide hole;

[0034] 100-Upper liner, 101-Heating component, 102-Temperature meter, 103-Upper flange, 104-Wafer, 105-Base, 106-Exhaust pipe, 107-Lower flange, 108-Lower dome, 109-Rotating support shaft, 110-Lifting support frame, 111-Pin, 112-Lower liner, 113-Gas pipe, 114-Process gas, 115-Preheating ring, 116-Upper dome, 119-Side wall, 200-Installation piece, 210-Gas delivery unit, 211-First gas distribution area, 230-Guide plate, 231-Fluid channel, 232-Gap, 240-Baffle plate. Detailed Implementation

[0035] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0036] In the description of this invention, it should be noted that the terms "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0037] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0038] Please see Figure 2This is a schematic diagram of the epitaxial device of this application. The epitaxial device includes an epitaxial chamber, a gas pipeline 113, an exhaust pipeline 106, a heating assembly 101, a thermometer 102, an insert 200, and a rotating support assembly. The epitaxial chamber includes a sidewall 119, an upper liner 100, a lower liner 112, an upper dome 116, a lower dome 108, an upper flange 103, and a lower flange 107. The upper liner 100 and the lower liner 112 are both annular quartz rings and are disposed inside the annular sidewall 119. The upper dome 116 and the lower dome 108 are approximately circular quartz rings. The upper liner 100 is positioned above the lower liner 112, and has an air inlet and an outlet on its side for the entry and exit of process gas 114. An upper dome 116 is positioned above the upper liner 100 and is fixed to the side wall 119 via an upper flange 103. A lower dome 108 is positioned below the lower liner 112 and is fixed to the side wall 119 via a lower flange 107. Both the upper dome 116 and the lower dome 108 are made of transparent quartz. A heating assembly 101 is positioned above and below the epitaxial chamber, and the emitted infrared light can penetrate the upper dome 116 and the lower dome 108 to enter the epitaxial chamber and provide heating energy. The rotating support assembly includes a base 105, a rotating support shaft 109, a lifting support frame 110, and a pin 111. The base is disposed inside the epitaxial chamber and is used to support the wafer 104 (or substrate) to be processed. The rotating support shaft 109 supports the rotation and lifting of the base 105. The lifting support frame 110 supports the pin 111 when the rotating support shaft 109 descends, thereby separating the wafer from the base 105 during wafer transfer. A temperature sensor 102 is disposed above and below the epitaxial chamber to monitor the temperature near the wafer. The epitaxial equipment also includes a preheating ring 115 disposed around the base 105 to preheat the process gas 114 entering the epitaxial chamber. The gas pipeline 113 is connected to the air inlet via the plug 200 to introduce the process gas 114 into the epitaxial chamber. The plug 200 is inserted into the slit of the side wall 119. The exhaust pipeline 106 is connected to the air outlet to discharge the waste gas from the epitaxial chamber. The heating component 101 heats and decomposes the process gas, which is deposited on the surface of the wafer 104, thereby depositing a film layer on the wafer surface.

[0039] To address the technical problem of uneven process airflow caused by the inconsistent flow path length of the process airflow from the various guide holes on the flow equalizer plate to the outlet edge of the plug due to the curved outlet edge of the existing plug, please refer to [link to relevant documentation]. Figure 3The present invention provides a plug-in 200 for an epitaxial chamber gas inlet. The plug-in 200 has multiple guide plates 230 spaced apart inside near its outlet side to uniformly distribute and guide the process gas, so that the process gas is uniformly distributed in the epitaxial chamber and improves the uniformity of the epitaxial growth of the wafer.

[0040] For details, please see Figure 3 The plug-in 200 includes a housing, within which at least one gas delivery unit 210 is disposed. The gas delivery unit 210 is sequentially divided into a first gas distribution zone 211 and a second gas distribution zone along the process gas flow direction; the first gas distribution zone 211 is located near the gas supply source (e.g., in...). Figure 1 The second gas distribution area (which can be connected to the gas pipeline) is located near the inlet and has an arc-shaped outlet edge. Multiple guide plates 230 of equal length are spaced apart within the second gas distribution area. The guide plates 230 extend along the flow direction of the process gas to the outlet edge, dividing the second gas distribution area into multiple fluid channels 231. No guide plates 230 are provided inside the first gas distribution area 211, thus forming a diffusion cavity. When the process gas flows through the insert 200, it enters the first gas distribution area 211 from the gas pipeline and diffuses uniformly within it. Then, the process gas enters the second gas distribution area and flows along the guide plates 230 within it. Due to the guiding effect of the guide plates 230, the process gas flows along the length of the fluid channels 231, forming a laminar flow. At this time, the process gas flowing out from the second gas distribution area has a greater flow conduction efficiency, so that after the process gas flows out of the plug-in 200, it forms a planar process gas flow field in the epitaxial chamber (that is, the process gas flows in a straight line to the maximum extent in the epitaxial chamber), preventing the process gas from being distributed again after leaving the plug-in 200, and effectively improving the uniformity of the wafer epitaxial growth rate.

[0041] Among them, the spatial connection line at the inlet end of the multiple guide plates 230 constitutes a virtual boundary line between the first gas distribution area 211 and the second gas distribution area; the first gas distribution area 211 is located on the upstream side of the virtual boundary line, and the second gas distribution area is located on the downstream side of the virtual boundary line.

[0042] Since the multiple guide vanes 230 have the same length, after the process gas completes uniform diffusion in the first gas distribution zone 211, it enters the second gas distribution zone under uniform pressure conditions. The uniform length of the guide vanes 230 ensures that the kinetic energy loss of the process gas at different locations in the second gas distribution zone due to the uniform length of the guide vanes 230 is essentially the same. Because the process gas has already achieved uniform diffusion in the first gas distribution zone 211, this diffusion effect, combined with the uniform length of the guide vanes 230, ensures that the velocity of the process gas flowing out of the outlet edge of the second gas distribution zone is essentially the same, thereby preventing the process gas from being depleted due to differences in velocity at different locations (e.g., after passing through the insert 200) due to variations in length. Figure 3 The process gas passes through the middle position of the plug-in 200 or the left and right sides of the plug-in 200, which causes the process gas rate to be different at the exit edge, thereby effectively preventing the process gas from generating turbulence due to redistribution before reaching the wafer.

[0043] Furthermore, the spacing between adjacent guide plates 230 is equal. At this time, after the process gas has completed sufficient diffusion in the first gas distribution zone 211, it is separated into process gas with the same volumetric flow rate by the equally spaced guide plates 230 after entering the second gas distribution zone, ensuring that the process gas volumetric flow rate in each fluid channel 231 is the same.

[0044] Furthermore, to ensure that the process gas can diffuse sufficiently within the first gas distribution zone 211, the maximum length of the housing in the gas flow direction (i.e., Figure 3 The ratio of the length T on the left and right sides of the middle shell to the length L of the guide plate 230 is 2.

[0045] Furthermore, to ensure that the process gas can be guided by the guide plate 230 in the second gas distribution zone, the ratio of the length L of the guide plate 230 to the distance W between adjacent guide plates 230 is greater than 5, so as to optimize the flow attachment of the process gas at the outlet edge.

[0046] In one specific embodiment, the housing of the plug-in 200 consists of three independent flow guiding components. Each flow guiding component includes a first gas distribution area 211 and a second gas distribution area. The first gas distribution area 211 is close to the gas source, and the second gas distribution area is close to the air inlet. The three flow guiding components are arranged horizontally (i.e., Figure 3 The three flow guiding components are arranged in a left, center, and right configuration to facilitate the disassembly and maintenance of the plug-in 200. The distance between adjacent flow guiding plates 230 in each flow guiding component is 4.3 mm, and the height of the flow guiding plate 230 (i.e., Figure 4 The distance between the upper and lower sides of the middle shell is 7.6 mm. And it is located... Figure 3The flow guiding components on the left and right sides each have 9 fluid channels 231, and the flow guiding component in the middle has 8 fluid channels 231.

[0047] Furthermore, to prevent secondary distribution of the process gas due to different partial pressures in the fluid channel 231, such as... Figure 5 As shown, at least one of the guide plates 230 is provided with a slit 232 extending through its thickness. The slit 232 is used to connect the fluid channels 231 on both sides of the guide plate 230, thereby achieving pressure equalization of the process gas in the two adjacent fluid channels 231. When the process gas enters the second gas distribution zone, as it flows along the guide plate 230 with the slit 232, it flows linearly towards the inlet in one fluid channel 231. As the process gas passes through the slit 232, it is subjected to the pressure of the adjacent fluid channel 231, causing a portion of the process gas in that fluid channel 231 to flow into the adjacent fluid channel 231 through the slit 232, or causing a portion of the process gas in the adjacent fluid channel 231 to flow into the slit 232, thus making the gas pressure in the two adjacent fluid channels 231 essentially the same.

[0048] On the cross-section of the guide plate 230 with the slit 232, see Figure 5 The gap 232 includes inclined sections that are at an angle opposite to the fluid flow direction in the fluid channel 231 on the same side and are interconnected. For example, the gap 232 includes a first inclined section and a second inclined section that are interconnected. The first inclined section is close to the first fluid channel, and the second inclined section is close to the second fluid channel. The first fluid channel and the second fluid channel are two adjacent fluid channels 231. The first inclined section is at an angle opposite to the fluid flow direction in the first fluid channel, and the second inclined section is at an angle opposite to the fluid flow direction in the second fluid channel. Here, the angle opposite means that the flow direction of the process gas in each inclined section is opposite to the fluid flow direction in the fluid channel 231 on the same side, but not completely opposite to the fluid flow direction in the fluid channel 231 on the same side.

[0049] According to fluid mechanics principles, higher-pressure fluid flows through gap 232 to lower-pressure fluid channel 231, thus achieving pressure balance between adjacent fluid channels 231. If gap 232 is opened in the direction of fluid flow in fluid channel 231, it will cause eddies to form as the fluid passes through gap 232, thereby disturbing the flow in both fluid channels 231. Therefore, in this application, gap 232 is opened against the direction of fluid flow in fluid channel 231 to guide the fluid through a smooth transition, reduce the generation of eddies, and maintain the stability of fluid flow. The counter-angle gap 232 can control fluid diversion, preventing excessive fluid from directly entering the other fluid channel 231 from one side, thereby reducing disturbance to the fluid flow on the other side.

[0050] In a preferred embodiment, the process gas flows through different locations inside the housing (e.g.: Figure 3 When the process gas flows in the middle or on the left and right edges inside the casing, because the outlet edge is arc-shaped, the flow path of the process gas in the fluid channel 231 located at the inner edge of the casing is longer, resulting in a lower partial pressure of the process gas after the fluid enters the fluid channel 231 after traveling a longer flow distance. To better balance the partial pressure of the process gas in each fluid channel 231, such as... Figure 5 As shown, the guide plate 230 with gap 232 is located near the left and right sides of the plug-in 200.

[0051] Specifically, the housing of the plug-in 200 is provided with three air supply units 210, which are arranged along the width direction of the plug-in 200. Figure 5 The width direction of the plug-in 200 is from left to right, and the width direction of the plug-in 200 is perpendicular to the process gas flow direction. The three gas delivery units 210 are arranged sequentially along the width direction of the plug-in 200. Figure 5 The air supply units are arranged in three order from left to right: the first air supply unit, the second air supply unit, and the third air supply unit. The second air supply unit is located in the middle, while the first and third air supply units are located at the edges. Preferably, gaps 232 are made only on 1-2 guide plates 230 near their respective edges in the first and third air supply units, that is, gaps 232 are made only on 1-2 guide plates 230 near the left side in the first air supply unit and on 1-2 guide plates 230 near the right side in the third air supply unit. No gaps 232 are made on the guide plates 230 in the second air supply unit. Overall, since the flow path of the process airflow at the edge of the housing of the plug-in 200 is relatively long, the plug-in 200 only has gaps 232 on the guide plates 230 near the edge, and the middle guide plates 230 are complete straight plates (i.e., no gaps 232 are made); wherein, the middle guide plates 230 include all the guide plates 230 in the second air supply unit and all the guide plates 230 in the first air supply unit and the third air supply unit except for 1-2 guide plates 230 near their respective edges.

[0052] Furthermore, because the opening 232 causes a redistribution of the process gas in adjacent fluid channels 231, it makes it difficult for the process gas in two adjacent fluid channels 231 to maintain a laminar flow pattern as it exits the outlet edge. Therefore, as... Figure 5As shown, the slit 232 is located in the middle section of the length of the guide plate 230; when the slit 232 is close to the first gas distribution area 211, the effect of the slit 232 in balancing the partial pressure of the process gas in the fluid channels 231 on its adjacent sides becomes worse. Therefore, the distance between the slit 232 and the outlet edge accounts for more than 1 / 3 of the length of the guide plate 230.

[0053] Furthermore, on the adjacent guide plate 230 with gap 232, such as Figure 5 As shown, the distances between the slits 232 and the outlet edge are equal to each other, preventing the process gas in the adjacent fluid channels 231 on both sides of the guide plate 230 with slits 232 from flowing stably in the second gas distribution zone (i.e., the process gas flows in the fluid channels 231 in a laminar flow form).

[0054] Furthermore, to prevent the width of the gap 232 from being too large and causing a change in the main direction of the process gas flow in the adjacent fluid channels 231 on both sides of the gap 232, the ratio of the width of the gap 232 to the length of the guide plate 230 is 1 / 5.

[0055] For further information, please see [link / reference]. Figure 5 The slit 232 is an arc-shaped channel or a V-shaped channel. When the slit 232 is a V-shaped channel, the included angle of the V-shaped channel is less than 150° to prevent the included angle of the V-shaped channel from being too large and affecting the main direction of the process gas flow in the fluid channels 231 corresponding to the two ports on both sides of the slit 232.

[0056] Furthermore, since the epitaxial growth rate is always faster at the edges of the wafer, please refer to [link / reference needed]. Figure 6 The second gas distribution area is further provided with a baffle plate 240, which is the same length as the guide plate 230 and wider than the guide plate 230. The baffle plate 240 blocks part of the process gas, reducing the flow velocity of the process gas in the epitaxial chamber at the corresponding position of the baffle plate 240. This adjusts the flow field distribution of the process gas in the epitaxial chamber, thereby suppressing the epitaxial growth rate at the wafer edge and ensuring uniform film thickness deposited on the wafer surface. Furthermore, the baffle plate 240 is parallel to the guide plate 230, and the distance between the baffle plate 240 and the guide plate 230 is equal to the distance between adjacent guide plates 230.

[0057] Furthermore, since different epitaxial chamber structures have different effects on the wafer epitaxial growth rate, the position of the baffle plate 240 corresponds to the region in the radial section of the wafer whose thickness exceeds the process threshold.

[0058] Furthermore, the width of the housing matches the diameter of the wafer in the epitaxial chamber, ensuring that the process gas flowing out through the plug-in 200 can completely cover the surface of the wafer.

[0059] In one specific embodiment, such as Figure 6 As shown, the housing of the plug-in 200 consists of three independent flow guiding components, and the three flow guiding components are arranged horizontally (i.e., Figure 3 The three flow guiding components are arranged on the left, center, and right. Among them, the second gas distribution area of ​​the flow guiding components on the left and right sides is equipped with a baffle plate 240 to suppress the epitaxial growth rate at the wafer edge.

[0060] like Figure 7 As shown, the existing plugin 10 (such as Figure 1 As shown, during wafer epitaxial growth, the thickness distribution of the film deposited on the wafer surface exhibits obvious non-uniformity, especially with a faster growth rate in the wafer edge region.

[0061] like Figure 8 As shown, in one embodiment of this application, by setting baffles 240 in the flow guiding components at the left and right edges of the plug-in 200, the thickness distribution of the film layer deposited on the wafer surface is more uniform, effectively suppressing the phenomenon of excessively fast growth rate in the wafer edge region.

[0062] It should be noted that the second gas distribution area may simultaneously include a guide plate 230 with a gap 232 and a baffle plate 240. While balancing the partial pressure of process gas in different fluid channels 231, the distribution of process gas flow field in the epitaxial chamber is adjusted according to the influence of different epitaxial chamber structures on the wafer epitaxial growth rate, so that the film thickness deposited on the wafer surface is uniform.

[0063] In one specific embodiment, to prevent turbulence in the process gas within the first gas distribution zone 211, which would hinder uniform diffusion, a flow equalization plate 20 is installed at the inlet end of the first gas distribution zone 211. Multiple flow equalization holes 30 are perforated on the flow equalization plate 20. This design ensures that the process gas, after entering the first gas distribution zone 211 through the multiple flow equalization holes 30, diffuses uniformly within the first gas distribution zone 211. This ensures that the volumetric flow rate of the process gas is the same in each fluid channel 231 of the second gas distribution zone, thereby improving the uniformity of the process gas within the first gas distribution zone 211.

[0064] Optionally, the flow equalization plate 20 is provided with a group of guide holes corresponding one-to-one with the gas supply unit 210, and each group of guide holes includes a plurality of uniformly arranged guide holes 30. In summary, the plug-in of the present invention effectively prevents secondary distribution of process gas in the epitaxial chamber by setting the guide plate 230 in the second gas distribution area near the gas inlet, thereby improving the uniformity of the film thickness deposited on the wafer surface. At the same time, by setting the gap 232 on the guide plate 230, the partial pressure of the process gas in the fluid channel 231 is ensured to be basically consistent; by setting the baffle plate 240 in the second gas distribution area, the flow field distribution of the process gas in the epitaxial chamber is adjusted, further improving the uniformity of the film thickness deposited on the wafer surface.

[0065] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A plug-in for an air inlet of an epitaxial chamber, characterized in that, include: A housing, wherein at least one air supply unit is provided inside the housing; The gas supply unit is divided into a first gas distribution area and a second gas distribution area along the process gas flow direction; the first gas distribution area is close to the gas supply source, and the second gas distribution area is close to the gas inlet and has an arc-shaped outlet edge. The second gas distribution zone is provided with a plurality of guide plates of equal length at intervals. The guide plates extend to the edge of the outlet along the flow direction of the process gas to divide the second gas distribution zone into a plurality of fluid channels.

2. The insert for the air inlet of an epitaxial chamber according to claim 1, characterized in that, The spacing between adjacent guide plates is equal.

3. The insert for the air inlet of an epitaxial chamber according to claim 1, characterized in that, The ratio of the maximum length of the housing in the process gas flow direction to the length of the guide plate is 2.

4. The insert for the air inlet of an epitaxial chamber according to claim 3, characterized in that, The ratio of the length of the guide vane to the spacing between adjacent guide vanes is greater than 5.

5. The insert for the air inlet of an epitaxial chamber according to claim 1, characterized in that, At least one of the guide plates is provided with a slit extending through its thickness, the slit being used to connect fluid channels on both sides of the guide plate; on the cross-section of the guide plate with the slit, the slit includes an inclined section that is at an angle opposite to the fluid flow direction in the fluid channel on the same side and is interconnected with it.

6. The insert for the air inlet of an epitaxial chamber according to claim 5, characterized in that, The slit guide plates are located on both sides of the housing.

7. The insert for an epitaxial chamber air inlet according to claim 5 or 6, characterized in that, On adjacent guide plates with slits, the distances from the slits to the edge of the outlet are equal to each other.

8. The insert for the air inlet of an epitaxial chamber according to claim 5, characterized in that, The distance between the slit and the edge of the outlet is more than 1 / 3 of the length of the guide plate.

9. The insert for the air inlet of an epitaxial chamber according to claim 5, characterized in that, The ratio of the width of the slit to the length of the deflector is 1 / 5.

10. The insert for the air inlet of an epitaxial chamber according to claim 5, characterized in that, The gap is an arc-shaped channel or a V-shaped channel; wherein the included angle of the V-shaped channel is less than 150°.

11. The insert for an epitaxial chamber air inlet according to claim 1 or 5, characterized in that, The second gas distribution zone is also provided with a baffle plate of the same length as the guide plate and larger than the width of the guide plate; and The air baffle is parallel to the air guide plate, and the distance between the air baffle and the air guide plate is equal to the distance between adjacent air guide plates.

12. The insert for an epitaxial chamber air inlet according to claim 11, characterized in that, The position of the baffle plate corresponds to the region in the radial section of the wafer whose thickness exceeds the process threshold.

13. The insert for the air inlet of an epitaxial chamber according to claim 1, characterized in that, A flow equalization plate is installed at the inlet end of the first gas distribution zone, and the flow equalization plate has multiple flow guide holes.

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