Diffusion method and device for controlling bulk metal in silicon wafer
By generating a silicon oxide layer on the surface of a silicon wafer and determining an appropriate heating temperature, the problem of uncontrollable bulk metal diffusion in silicon wafers was solved, and accurate diffusion value control was achieved.
Patent Information
- Application Number
- CN202511110415.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-08
- Publication Date
- 2025-11-14
AI Technical Summary
Existing technologies cannot effectively control the diffusion of bulk metal in silicon wafers, resulting in the inability to meet the expected content requirements.
By generating a silicon oxide layer on the first surface of a silicon wafer and determining an appropriate heating temperature based on the target diffusion value, the bulk metal diffuses to the opposite second surface, generating an oxidized silicon wafer to achieve the target diffusion value.
This enables precise control of the bulk metal content in silicon wafers, ensuring that the diffusion value meets process requirements.
Smart Images
Figure CN120954972A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method and apparatus for controlling the diffusion of bulk metal in a silicon wafer. Background Technology
[0002] Silicon wafers are the substrate material for integrated circuit (IC) devices. With the continuous development of IC technology, the linewidth of devices is constantly shrinking, and the precision requirements for the metal content of silicon wafers are becoming increasingly stringent. During the manufacturing process of silicon wafers, the introduction and diffusion of Cu and Ni elements are unavoidable. At higher temperatures, Cu and Ni elements readily diffuse into the silicon wafer surface; however, high temperatures also easily cause Cu and Ni elements within the silicon wafer to diffuse outwards.
[0003] In related technologies, bulk metal diffusion in silicon wafers is generally achieved by heating. However, this method cannot control the amount of bulk metal diffusion, resulting in the bulk metal content in the silicon wafer failing to meet the expected requirements. Summary of the Invention
[0004] To address the aforementioned technical problems, this invention provides a method for controlling the diffusion of bulk metals in silicon wafers, which can accurately control the content of bulk metals in silicon wafers.
[0005] To achieve the above objectives, the technical solution adopted in the embodiments of the present invention is as follows:
[0006] In a first aspect, the present invention provides a method for controlling the diffusion of bulk metal in a silicon wafer, comprising:
[0007] The first silicon wafer is placed in an environment with a first temperature value, and a silicon oxide layer is generated on the first surface of the first silicon wafer to obtain the oxidized first silicon wafer;
[0008] Based on the target diffusion value of the bulk metal in the oxidized first silicon wafer, a second temperature value matching the target diffusion value is determined, wherein the target diffusion value is the bulk metal value that the bulk metal in the oxidized first silicon wafer needs to diffuse.
[0009] The oxidized first silicon wafer is heated based on the second temperature value, causing the bulk metal to diffuse to the second surface of the oxidized first silicon wafer to obtain a second silicon wafer, wherein the first surface and the second surface are two opposing surfaces.
[0010] In some embodiments, placing the first silicon wafer in an environment with a first temperature value and forming a silicon oxide layer on a first surface of the first silicon wafer to obtain an oxidized first silicon wafer includes:
[0011] The first silicon wafer is placed in an environment with the first temperature value;
[0012] The second surface of the first silicon wafer is sealed and shielded.
[0013] A target ratio of silane and oxygen is introduced into the first surface of the first silicon wafer to form a silicon oxide layer of a target thickness on the first surface of the first silicon wafer, resulting in an oxidized first silicon wafer, wherein the target thickness is greater than or equal to...
[0014] In some embodiments, determining a second temperature value matching the target diffusion value based on the target diffusion value required for the bulk metal in the oxidized first silicon wafer includes:
[0015] Multiple third temperature values are set, and multiple identical sample silicon wafers are obtained. The multiple third temperature values are multiple temperature values ordered in order of their magnitude, and the difference between any two adjacent third temperature values is the same. The multiple sample silicon wafers correspond one-to-one with the multiple third temperature values.
[0016] Based on each of the plurality of third temperature values, the plurality of sample silicon wafers are heated in turn to obtain a plurality of diffusion results. The plurality of diffusion results are used to indicate the diffusion value of the bulk metal of the sample silicon wafer at the corresponding third temperature value. The plurality of diffusion results correspond one-to-one with the plurality of sample silicon wafers.
[0017] A bulk metal diffusion model is generated based on the multiple diffusion results. The bulk metal diffusion model is used to represent the diffusion of bulk metal in a silicon wafer at different temperature values.
[0018] Based on the target diffusion value of the bulk metal in the oxidized first silicon wafer and the bulk metal diffusion model, a second temperature value matching the target diffusion value is determined.
[0019] In some embodiments, determining a second temperature value matching the target diffusion value based on the target diffusion value of the bulk metal in the oxidized first silicon wafer and the bulk metal diffusion model includes:
[0020] Determine the target diffusion value for the bulk metal in the oxidized first silicon wafer;
[0021] The target diffusion value is substituted into the bulk metal diffusion model for querying, and the second temperature value that matches the target diffusion value is determined.
[0022] In some embodiments, after heating the oxidized first silicon wafer based on the second temperature value to diffuse the bulk metal to the second surface of the oxidized first silicon wafer to obtain a second silicon wafer, the method further includes:
[0023] The content of bulk metal on the second surface of the second silicon wafer is detected, and the bulk metal diffusion value is obtained based on the detection results;
[0024] When the bulk metal diffusion value is equal to the target diffusion value, the first and second surfaces of the second silicon wafer are cleaned to remove the silicon oxide layer and the bulk metal diffused on the second surface. In some embodiments, the first temperature value is in the range of 300°C to 500°C, and the second temperature value is in the range of 250°C to 700°C.
[0025] In a second aspect, the present invention provides a device for controlling the diffusion of bulk metal in a silicon wafer, the device comprising:
[0026] A generation module is used to place a first silicon wafer in an environment with a first temperature value and generate a silicon oxide layer on the first surface of the first silicon wafer to obtain an oxidized first silicon wafer.
[0027] The determining module is used to determine a second temperature value that matches the target diffusion value of the bulk metal in the oxidized first silicon wafer, wherein the target diffusion value is the bulk metal value that the bulk metal in the oxidized first silicon wafer needs to diffuse.
[0028] A heating module is used to heat the oxidized first silicon wafer based on the second temperature value, so that the bulk metal diffuses to the second surface of the oxidized first silicon wafer to obtain a second silicon wafer, wherein the first surface and the second surface are two opposing surfaces.
[0029] Thirdly, the present invention also provides an electronic device including a processor, a memory, and a computer program stored in the memory and executable on the processor, wherein the computer program, when executed by the processor, performs the steps of the method described in the first aspect above.
[0030] Fourthly, the present invention also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the method described in the first aspect above.
[0031] Fifthly, the present invention also provides a computer program product, including computer instructions that, when executed by a processor, implement the steps of the method described in the first aspect above.
[0032] The beneficial effects of this invention are:
[0033] The technical solution of this invention firstly involves covering a silicon oxide layer on the first surface of a first silicon wafer based on a first temperature value to obtain an oxidized first silicon wafer. Then, a target diffusion value for the bulk metal in the oxidized first silicon wafer is determined. Based on the target diffusion value, a second temperature value for heating the first silicon wafer is determined. The oxidized first silicon wafer is then heated at the second temperature value, which allows the bulk metal in the oxidized first silicon wafer to diffuse to the second surface opposite to the first surface, resulting in a second silicon wafer with a bulk metal diffusion value of the target diffusion value. This achieves accurate control of the bulk metal content in the silicon wafer according to the required value. Attached Figure Description
[0034] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description of the present invention will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0035] Figure 1 This is a flowchart of a method for controlling the diffusion of bulk metal in a silicon wafer, provided in an embodiment of the present invention.
[0036] Figure 2 This is a schematic diagram illustrating the diffusion values of bulk metal at different temperatures in an embodiment of the present invention;
[0037] Figure 3 This is a comparison chart of the Cu diffusion value of a silicon wafer with a silicon oxide layer in an embodiment of the present invention and the Cu diffusion value of a silicon wafer without a silicon oxide layer.
[0038] Figure 4 This is a structural diagram of a device for controlling the diffusion of bulk metal in a silicon wafer, provided in an embodiment of the present invention.
[0039] Figure 5 This is a structural diagram of an electronic device provided in an embodiment of the present invention. Detailed Implementation
[0040] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention are within the scope of protection of the present invention.
[0041] This invention provides a method and apparatus for controlling the diffusion of bulk metal in a silicon wafer, which can accurately control the content of bulk metal in the silicon wafer.
[0042] This invention provides a method for controlling the diffusion of bulk metal in a silicon wafer, such as... Figure 1 As shown, it includes:
[0043] Step 101: Place the first silicon wafer in an environment with a first temperature value to generate a silicon oxide layer on the first surface of the first silicon wafer, thereby obtaining the oxidized first silicon wafer.
[0044] In this embodiment, each first silicon wafer includes a bulk metal. The bulk metal in a silicon wafer typically refers to the metallic material used in semiconductor manufacturing to create various electronic components. These metals are usually located inside the silicon wafer or attached to its surface, serving functions such as electrical conductivity, connectivity, and heat dissipation. Common bulk metals include aluminum (Al), copper (Cu), and titanium (Ti). These metals have different applications and functions in different manufacturing processes. In this invention, copper is used as an example to illustrate the bulk metal included in the silicon wafer.
[0045] It should be noted that before placing the first silicon wafer in an environment with the first temperature value, the surface of the first silicon wafer needs to be cleaned to ensure the accuracy of the silicon wafer bulk metal diffusion measurement. For example, the front side of the silicon wafer can be cleaned using a cleaning machine.
[0046] The first temperature value can be set according to the actual situation. In some implementations, the first temperature value is in the range of 300℃ to 500℃. The second temperature value can be adjusted according to the actual situation of the silicon wafer. In this embodiment, it is not specifically limited.
[0047] In this embodiment, the formation of the silicon oxide layer on the first surface of the first silicon wafer is controlled. It should be noted that the polycrystalline silicon film of the silicon oxide layer in this embodiment specifically serves to hinder the diffusion of bulk metal elements. That is, after the silicon oxide layer is formed on the first surface of the first silicon wafer, the bulk metal in the first silicon wafer cannot diffuse from the first surface, thereby causing the bulk metal to move to the other side of the first silicon wafer, i.e., the opposite side of the first surface (the second surface), and finally obtaining the oxidized first silicon wafer.
[0048] Step 102: Determine a second temperature value that matches the target diffusion value of the bulk metal in the oxidized first silicon wafer. The target diffusion value is the bulk metal value that the bulk metal in the oxidized first silicon wafer needs to diffuse.
[0049] In this embodiment, it should be noted that the target diffusion value of the bulk metal in the first silicon wafer is the set diffusion value required for the bulk metal. For example, if the process requirement for the bulk metal of the first silicon wafer is 800ppt, then the target diffusion value can be set to 800ppt in this embodiment.
[0050] The second temperature value that matches the target diffusion value refers to the temperature range at which the bulk metal diffusion of the first silicon wafer equals the target diffusion value when heated. The specific matching process can be determined based on the correspondence between temperature values and bulk metal diffusion values. For example, the correspondence between bulk metal diffusion values and temperature values can be obtained through extensive experimental data. Taking Cu as an example, the bulk metal diffusion value... Figure 2 As shown, Figure 2 This is a schematic diagram showing the diffusion values of Cu at different temperatures. Figure 2 It is known that within the heating temperature range of 250℃ to 400℃, the diffusion value of Cu increases slowly with increasing temperature. Within the heating temperature range of 400℃ to 650℃, the diffusion value of Cu increases rapidly with increasing temperature. Therefore, the target diffusion value required for the bulk metal in the first silicon wafer can be determined based on... Figure 2 The second temperature value was obtained by querying the data. It should be noted that the second temperature value is 250℃~700℃. The diffusion effect of bulk metal is poor below 250℃ and above 700℃.
[0051] Step 103: Heat the oxidized first silicon wafer based on the second temperature value, so that the bulk metal diffuses to the second surface of the oxidized first silicon wafer to obtain a second silicon wafer, wherein the first surface and the second surface are two opposing surfaces.
[0052] In this embodiment, after determining the second temperature value, the first silicon wafer is heated based on the temperature within the second temperature range, thereby causing the bulk metal to diffuse to the second surface of the first silicon wafer, resulting in a second silicon wafer. Specifically, the second surface of the silicon wafer is opposite to the first surface of the silicon wafer. It should be noted that heating the oxidized first silicon wafer simply involves placing the first silicon wafer in an environment within the second temperature range.
[0053] After heating, a second silicon wafer is obtained, wherein the diffusion value of the bulk metal on the surface of the second silicon wafer is equal to the target diffusion value, thereby achieving precise control of the bulk metal content in the silicon wafer. Figure 3 As shown, Figure 3 This is a comparison chart of the Cu diffusion values of the silicon wafer with a silicon oxide layer (LTO) and the silicon wafer without a silicon oxide layer in this embodiment. Figure 3 It is known that in silicon wafers without a silicon oxide layer, bulk metal diffuses on both opposite sides, making the diffusion direction and value of the bulk metal difficult to control. After a silicon oxide layer is formed, Cu diffuses only on the side without the silicon oxide layer, and there is almost no diffusion on the side with the silicon oxide layer, thus enabling precise control over the diffusion value of the bulk metal.
[0054] The technical solution of this invention firstly involves covering a silicon oxide layer on the first surface of a first silicon wafer based on a first temperature value to obtain an oxidized first silicon wafer. Then, a target diffusion value for the bulk metal in the oxidized first silicon wafer is determined. Based on the target diffusion value, a second temperature value for heating the first silicon wafer is determined. The oxidized first silicon wafer is then heated at the second temperature value, which allows the bulk metal in the oxidized first silicon wafer to diffuse to the second surface opposite to the first surface, resulting in a second silicon wafer with a bulk metal diffusion value of the target diffusion value. This achieves accurate control of the bulk metal content in the silicon wafer according to the required value.
[0055] In some embodiments, placing the first silicon wafer in an environment with a first temperature value and forming a silicon oxide layer on a first surface of the first silicon wafer to obtain an oxidized first silicon wafer includes:
[0056] The first silicon wafer is placed in an environment with the first temperature value;
[0057] The second surface of the first silicon wafer is sealed and shielded.
[0058] A target ratio of silane and oxygen is introduced into the first surface of the first silicon wafer to form a silicon oxide layer of a target thickness on the first surface of the first silicon wafer, resulting in an oxidized first silicon wafer, wherein the target thickness is greater than or equal to...
[0059] In this embodiment, the first silicon wafer is first placed in an environment with a first temperature value and the second surface of the first silicon wafer is sealed and shielded. By shielding the second surface, it can be ensured that a silicon oxide layer will not be generated on the second surface in the same way as the first surface, thereby controlling the diffusion direction of the bulk metal.
[0060] Specifically, a clean silicon wafer is placed in a heating environment of 300–500°C, and silane and oxygen are introduced to form a silicon oxide layer of the target thickness on the first surface of the silicon wafer. It should be noted that the thickness of the silicon oxide layer formed on the first surface of the silicon wafer needs to be greater than or equal to the target thickness. That is, when the thickness of the silicon oxide layer is less than In this case, the barrier effect on the bulk metal in the silicon wafer is poor, which may cause the bulk metal to diffuse on one side of the silicon oxide layer. Therefore, it is necessary to ensure the thickness of the silicon oxide layer.
[0061] To illustrate with a specific embodiment, five identical silicon wafers were placed in environments at 300°C, 350°C, 400°C, 450°C, and 500°C, respectively, and heated while silane and oxygen were introduced. After simultaneous heating for 1 hour, in the 300°C environment, the thickness of the silicon oxide layer was [missing information]. In an environment of 350℃, the thickness of the silicon oxide layer is In an environment of 400℃, the thickness of the silicon oxide layer is In an environment of 450℃, the thickness of the silicon oxide layer is In an environment of 500℃, the thickness of the silicon oxide layer is Therefore, it can be seen that in the heating environment of 300-500°C in this embodiment, the thicker the required silicon oxide layer, the higher the required heating temperature.
[0062] In some embodiments, determining a second temperature value matching the target diffusion value based on the target diffusion value required for the bulk metal in the oxidized first silicon wafer includes:
[0063] Multiple third temperature values are set, and multiple identical sample silicon wafers are obtained. The multiple third temperature values are multiple temperature values ordered in order of their magnitude, and the difference between any two adjacent third temperature values is the same. The multiple sample silicon wafers correspond one-to-one with the multiple third temperature values.
[0064] Based on each of the plurality of third temperature values, the plurality of sample silicon wafers are heated in turn to obtain a plurality of diffusion results. The plurality of diffusion results are used to indicate the diffusion value of the bulk metal of the sample silicon wafer at the corresponding third temperature value. The plurality of diffusion results correspond one-to-one with the plurality of sample silicon wafers.
[0065] A bulk metal diffusion model is generated based on the multiple diffusion results. The bulk metal diffusion model is used to represent the diffusion of bulk metal in a silicon wafer at different temperature values.
[0066] Based on the target diffusion value of the bulk metal in the oxidized first silicon wafer and the bulk metal diffusion model, a second temperature value matching the target diffusion value is determined.
[0067] In this embodiment, a bulk metal diffusion model can be generated using a large amount of experimental data. This model represents the diffusion of bulk metal in a silicon wafer at different temperature values. After generating the bulk metal diffusion model, the required diffusion values for the actual silicon wafer can be queried within the model to determine the corresponding temperature value. Specifically, the bulk metal model can be as follows: Figure 2 The diagram shows the relationship.
[0068] Specifically, the bulk metal formation process includes: first, obtaining multiple sample silicon wafers, which must be identical in size, shape, and manufacturing process to ensure experimental accuracy. Multiple third temperature values can be within the range of 250℃ to 700℃, such as 250℃, 300℃, 350℃, 400℃, 450℃, 500℃, 550℃, and 600℃, ensuring that the difference between any two adjacent temperature values is the same, thus guaranteeing experimental accuracy.
[0069] It should be noted that each temperature value corresponds to one sample silicon wafer; therefore, in this embodiment, eight sample silicon wafers were selected for the experiment. The eight sample silicon wafers were heated at eight different third temperatures, yielding eight diffusion results. These diffusion results indicate the diffusion value of the bulk metal on the sample silicon wafer at the corresponding third temperature. The eight diffusion results are plotted as follows: Figure 2 The line graph shown can be used to generate a bulk metal diffusion model. In actual processing, a large number of sample silicon wafers and a third temperature value can be selected for experiments to further improve experimental accuracy and make the obtained bulk metal diffusion model more accurate.
[0070] A specific embodiment is described below. Eight third temperature values were set: 250°C, 300°C, 350°C, 400°C, 450°C, 500°C, 550°C, and 600°C. Eight identical sample silicon wafers were obtained. In a heating environment of 250°C, the bulk metal diffusion value of the sample silicon wafer was 56.60%. In a heating environment of 300°C, the bulk metal diffusion value was 58.90%. In a heating environment of 350°C, the bulk metal diffusion value was 59.40%. In a heating environment of 400°C, the bulk metal diffusion value was 60.10%. In a heating environment of 450°C, the bulk metal diffusion value was 65.30%. In a heating environment of 500°C, the bulk metal diffusion value was 69.70%. In a heating environment of 550°C, the bulk metal diffusion value was 74.30%. In a heating environment of 600°C, the bulk metal diffusion value of the sample silicon wafer was 77.90%. Therefore, it can be seen that in the heating environment of 250–600°C in this embodiment, the higher the heating temperature, the higher the bulk metal diffusion value in the silicon wafer.
[0071] In some embodiments, determining a second temperature value matching the target diffusion value based on the target diffusion value of the bulk metal in the oxidized first silicon wafer and the bulk metal diffusion model includes:
[0072] Determine the target diffusion value for the bulk metal in the oxidized first silicon wafer;
[0073] The target diffusion value is substituted into the bulk metal diffusion model for querying, and the second temperature value that matches the target diffusion value is determined.
[0074] In this embodiment, the target diffusion value for the bulk metal in the oxidized first silicon wafer can be adjusted according to the actual process conditions and requirements. For example, if the first silicon wafer has requirements for the bulk metal content before entering the next production process, then the required value can be set as the target diffusion value.
[0075] After generating the bulk metal diffusion model, the target diffusion value of the bulk metal in the oxidized first silicon wafer is queried in the bulk metal diffusion model to obtain the second temperature value that matches the target diffusion value. The efficiency of controlling bulk metal diffusion is improved by using the bulk metal diffusion model.
[0076] In some embodiments, after heating the oxidized first silicon wafer based on the second temperature value to diffuse the bulk metal to the second surface of the oxidized first silicon wafer to obtain a second silicon wafer, the method further includes:
[0077] The content of bulk metal on the second surface of the second silicon wafer is detected, and the bulk metal diffusion value is obtained based on the detection results;
[0078] When the bulk metal diffusion value is equal to the target diffusion value, the first and second surfaces of the second silicon wafer are cleaned to remove the silicon oxide layer and the bulk metal diffused on the second surface.
[0079] In this embodiment, after heating, the surface metal of the non-oxidized silicon surface of the second silicon wafer can be tested by "solution sampling" and "inductively coupled plasma mass spectrometry" (ICP-MS) to obtain the metal diffusion value of the bulk metal of the silicon wafer.
[0080] If the metal diffusion value is verified to be equal to the target diffusion value, it indicates that the diffusion amount of the bulk metal meets the requirements. The second silicon wafer can then be cleaned to remove the bulk metal. Specifically, the first and second surfaces of the two silicon wafers can be cleaned simultaneously to remove the silicon oxide layer and the bulk metal diffused on the second surface, resulting in a cleaned second silicon wafer ready for subsequent processing.
[0081] The technical solution of this invention firstly involves covering a silicon oxide layer on the first surface of a first silicon wafer based on a first temperature value to obtain an oxidized first silicon wafer. Then, a target diffusion value for the bulk metal in the oxidized first silicon wafer is determined. Based on the target diffusion value, a second temperature value for heating the first silicon wafer is determined. The oxidized first silicon wafer is then heated at the second temperature value, which allows the bulk metal in the oxidized first silicon wafer to diffuse to the second surface opposite to the first surface, resulting in a second silicon wafer with a bulk metal diffusion value of the target diffusion value. This achieves accurate control of the bulk metal content in the silicon wafer according to the required value.
[0082] This invention also provides a device for controlling the diffusion of bulk metal in a silicon wafer, such as... Figure 4 As shown, it includes:
[0083] The generation module 410 is used to place the first silicon wafer in an environment with a first temperature value and generate a silicon oxide layer on the first surface of the first silicon wafer to obtain the oxidized first silicon wafer.
[0084] The determining module 420 is used to determine a second temperature value that matches the target diffusion value of the bulk metal in the oxidized first silicon wafer, wherein the target diffusion value is the bulk metal value that the bulk metal in the oxidized first silicon wafer needs to diffuse.
[0085] The heating module 430 is used to heat the oxidized first silicon wafer based on the second temperature value, so that the bulk metal diffuses to the second surface of the oxidized first silicon wafer to obtain a second silicon wafer, wherein the first surface and the second surface are two opposing surfaces.
[0086] In some embodiments, the generation module 410 includes:
[0087] A placement submodule is used to place the first silicon wafer in an environment with the first temperature value;
[0088] A shielding submodule is used to seal and shield the second surface of the first silicon wafer;
[0089] A first generation submodule is configured to introduce a target ratio of silane and oxygen onto the first surface of the first silicon wafer to generate a silicon oxide layer of a target thickness on the first surface of the first silicon wafer, thereby obtaining an oxidized first silicon wafer, wherein the target thickness is greater than or equal to...
[0090] In some embodiments, the determining module 420 includes:
[0091] The acquisition submodule is used to set multiple third temperature values and acquire multiple identical sample silicon wafers. The multiple third temperature values are multiple temperature values ordered in order of their magnitude, and the difference between any two adjacent third temperature values is the same. The multiple sample silicon wafers correspond one-to-one with the multiple third temperature values.
[0092] The heating submodule is used to heat the plurality of sample silicon wafers sequentially based on each of the plurality of third temperature values to obtain a plurality of diffusion results. The plurality of diffusion results are used to indicate the diffusion value of the bulk metal of the sample silicon wafer at the corresponding third temperature value. The plurality of diffusion results correspond one-to-one with the plurality of sample silicon wafers.
[0093] The second generation submodule is used to generate a bulk metal diffusion model based on the multiple diffusion results. The bulk metal diffusion model is used to represent the diffusion of bulk metal in the silicon wafer at different temperature values.
[0094] The determination submodule is used to determine a second temperature value that matches the target diffusion value based on the target diffusion value of the bulk metal in the oxidized first silicon wafer and the bulk metal diffusion model.
[0095] In some embodiments, determining the submodule includes:
[0096] The first determining unit is used to determine the target diffusion value of the bulk metal in the oxidized first silicon wafer that needs to be diffused.
[0097] The second determining unit is used to substitute the target diffusion value into the bulk metal diffusion model for querying and to determine the second temperature value that matches the target diffusion value.
[0098] In some embodiments, it also includes:
[0099] The detection module is used to detect the content of bulk metal on the second surface of the second silicon wafer and obtain the bulk metal diffusion value based on the detection result.
[0100] A cleaning module is used to clean the first and second surfaces of the second silicon wafer when the bulk metal diffusion value is equal to the target diffusion value, so as to remove the silicon oxide layer and the bulk metal diffused on the second surface.
[0101] In some embodiments, the first temperature value is in the range of 300°C to 500°C, and the second temperature value is in the range of 250°C to 700°C.
[0102] The technical solution of this invention firstly involves covering a silicon oxide layer on the first surface of a first silicon wafer based on a first temperature value to obtain an oxidized first silicon wafer. Then, a target diffusion value for the bulk metal in the oxidized first silicon wafer is determined. Based on the target diffusion value, a second temperature value for heating the first silicon wafer is determined. The oxidized first silicon wafer is then heated at the second temperature value, which allows the bulk metal in the oxidized first silicon wafer to diffuse to the second surface opposite to the first surface, resulting in a second silicon wafer with a bulk metal diffusion value of the target diffusion value. This achieves accurate control of the bulk metal content in the silicon wafer according to the required value.
[0103] This invention also provides an electronic device. Please refer to [link to relevant documentation]. Figure 5 The electronic device may include a processor 501, a memory 502, and a program 5021 stored in the memory 502 and capable of running on the processor 501.
[0104] When program 5021 is executed by processor 501, it can achieve the following: Figure 1 Any step in the corresponding method embodiment can achieve the same technical effect, and will not be repeated here to avoid repetition.
[0105] This invention also provides a computer-readable storage medium storing a computer program. When executed by a processor, this computer program implements the various processes of the above-described method embodiments for controlling the diffusion of bulk metal in a silicon wafer, achieving the same technical effects. To avoid repetition, these processes will not be described again here. The computer-readable storage medium may be a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.
[0106] This invention also provides a computer program product, which is stored in a storage medium and executed by at least one processor to implement the various processes of the above-described method for controlling the diffusion of bulk metal in a silicon wafer, and can achieve the same technical effect. To avoid repetition, it will not be described again here.
[0107] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.
[0108] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk), and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in the various embodiments of the present invention.
[0109] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.
[0110] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk), and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in the various embodiments of the present invention.
[0111] In the various method embodiments of this disclosure, the sequence numbers of each step are not intended to limit the order of the steps. For those skilled in the art, any changes in the order of the steps are within the scope of protection of this disclosure without any creative effort.
[0112] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, since the embodiments are basically similar to the product embodiments, the descriptions are relatively simple, and the relevant parts can be referred to the descriptions of the product embodiments.
[0113] The above description represents the preferred embodiments of this disclosure. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles described herein, and these improvements and modifications should also be considered within the scope of protection of this disclosure.
Claims
1. A method for controlling the diffusion of bulk metal in a silicon wafer, characterized in that, The method includes: The first silicon wafer is placed in an environment with a first temperature value, and a silicon oxide layer is generated on the first surface of the first silicon wafer to obtain the oxidized first silicon wafer; Based on the target diffusion value of the bulk metal in the oxidized first silicon wafer, a second temperature value matching the target diffusion value is determined, wherein the target diffusion value is the bulk metal value that the bulk metal in the oxidized first silicon wafer needs to diffuse. The oxidized first silicon wafer is heated based on the second temperature value, causing the bulk metal to diffuse to the second surface of the oxidized first silicon wafer to obtain a second silicon wafer, wherein the first surface and the second surface are two opposing surfaces.
2. The method according to claim 1, characterized in that, The step of placing a first silicon wafer in an environment with a first temperature value and generating a silicon oxide layer on a first surface of the first silicon wafer to obtain an oxidized first silicon wafer includes: The first silicon wafer is placed in an environment with the first temperature value; The second surface of the first silicon wafer is sealed and shielded. A target ratio of silane and oxygen is introduced into the first surface of the first silicon wafer to form a silicon oxide layer of a target thickness on the first surface of the first silicon wafer, resulting in an oxidized first silicon wafer, wherein the target thickness is greater than or equal to...
3. The method according to claim 1, characterized in that, The step of determining a second temperature value that matches the target diffusion value based on the target diffusion value required for the bulk metal in the oxidized first silicon wafer includes: Multiple third temperature values are set, and multiple identical sample silicon wafers are obtained. The multiple third temperature values are multiple temperature values ordered in order of their magnitude, and the difference between any two adjacent third temperature values is the same. The multiple sample silicon wafers correspond one-to-one with the multiple third temperature values. Based on each of the plurality of third temperature values, the plurality of sample silicon wafers are heated in turn to obtain a plurality of diffusion results. The plurality of diffusion results are used to indicate the diffusion value of the bulk metal of the sample silicon wafer at the corresponding third temperature value. The plurality of diffusion results correspond one-to-one with the plurality of sample silicon wafers. A bulk metal diffusion model is generated based on the multiple diffusion results. The bulk metal diffusion model is used to represent the diffusion of bulk metal in a silicon wafer at different temperature values. Based on the target diffusion value of the bulk metal in the oxidized first silicon wafer and the bulk metal diffusion model, a second temperature value matching the target diffusion value is determined.
4. The method according to claim 3, characterized in that, The step of determining a second temperature value matching the target diffusion value based on the target diffusion value of the bulk metal in the oxidized first silicon wafer and the bulk metal diffusion model includes: Determine the target diffusion value for the bulk metal in the oxidized first silicon wafer; The target diffusion value is substituted into the bulk metal diffusion model for querying, and the second temperature value that matches the target diffusion value is determined.
5. The method according to claim 1, characterized in that, After heating the oxidized first silicon wafer based on the second temperature value, causing the bulk metal to diffuse to the second surface of the oxidized first silicon wafer to obtain a second silicon wafer, the method further includes: The content of bulk metal on the second surface of the second silicon wafer is detected, and the bulk metal diffusion value is obtained based on the detection results; When the bulk metal diffusion value is equal to the target diffusion value, the first and second surfaces of the second silicon wafer are cleaned to remove the silicon oxide layer and the bulk metal diffused on the second surface.
6. The method according to any one of claims 1-5, characterized in that, The first temperature value is 300℃ The second temperature value is in the range of 250°C to 700°C, within the range of ~500°C.
7. A device for controlling the diffusion of bulk metal in a silicon wafer, characterized in that, The device includes: A generation module is used to place a first silicon wafer in an environment with a first temperature value and generate a silicon oxide layer on the first surface of the first silicon wafer to obtain an oxidized first silicon wafer. The determining module is used to determine a second temperature value that matches the target diffusion value of the bulk metal in the oxidized first silicon wafer, wherein the target diffusion value is the bulk metal value that the bulk metal in the oxidized first silicon wafer needs to diffuse. A heating module is used to heat the oxidized first silicon wafer based on the second temperature value, so that the bulk metal diffuses to the second surface of the oxidized first silicon wafer to obtain a second silicon wafer, wherein the first surface and the second surface are two opposing surfaces.
8. An electronic device, characterized in that, include: A processor, a memory, and a program stored in the memory and executable on the processor, wherein the program, when executed by the processor, implements the steps of the method as described in any one of claims 1 to 6.
9. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the steps of the method as described in any one of claims 1 to 6.
10. A computer program product, characterized in that, Includes computer instructions that, when executed by a processor, implement the steps of the method as described in any one of claims 1 to 6.