Superconducting resonant cavity, superconducting quantum chip and quantum computing equipment
By optimizing the width combination of the superconducting resonant cavity, especially the width ratio of the center electrode and the ground electrode, the problem of unstable resonant frequency of the superconducting resonant cavity was solved, a more accurate and stable resonant frequency was achieved, and the performance of the superconducting quantum chip was improved.
Patent Information
- Application Number
- CN202410592468.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-13
- Publication Date
- 2025-11-14
AI Technical Summary
The resonant frequency of a superconducting resonant cavity is easily affected by factors such as the thickness of the superconducting material coating, resulting in a large deviation between the actual frequency and the design frequency, which affects the normal operation of the superconducting quantum chip.
By optimizing the width combination of the superconducting resonant cavity, the width relationship between the center electrode and the ground electrode is ensured to meet a specific ratio, thereby reducing the influence of dynamic inductance on the resonant frequency. A larger center electrode width and a smaller slit width are used to optimize the relationship between dynamic inductance and resonant frequency.
This improves the accuracy and stability of the resonant frequency of the superconducting resonant cavity, reduces the impact of coating thickness and etching fluctuations on the resonant frequency, and ensures the stable operation of the superconducting quantum chip.
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Figure CN120955334A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of quantum computing, and in particular to a superconducting resonant cavity, a superconducting quantum chip, and a quantum computing device. Background Technology
[0002] With the rapid development of quantum computing technology based on superconducting systems, the number of qubits on superconducting quantum chips has increased dramatically. The reading of qubits is achieved through superconducting resonant cavities connected to the qubits. As the number of qubits increases dramatically, the number of superconducting resonant cavities also increases. Therefore, the resonant frequency of the superconducting resonant cavity is crucial for superconducting quantum chips.
[0003] The resonant frequency of a superconducting resonant cavity is determined by the dynamic inductance. Since the superconducting resonant cavity is made of superconducting materials, the dynamic inductance is easily affected by factors such as the coating thickness of the superconducting material, resulting in a large deviation between the actual resonant frequency of the superconducting resonant cavity and the designed resonant frequency. Summary of the Invention
[0004] This application provides a superconducting resonant cavity, a superconducting quantum chip, and a quantum computing device, ensuring a more accurate and stable resonant frequency of the superconducting resonant cavity. The technical solution is as follows:
[0005] On the one hand, a superconducting resonant cavity is provided, the superconducting resonant cavity comprising: a substrate, a central electrode, and a ground electrode;
[0006] The center electrode and the ground electrode are located on the substrate;
[0007] The width of the central electrode is a first width;
[0008] The width of the slit between the center electrode and the ground electrode is the second width;
[0009] Wherein, the sum of the first width and the second width is not greater than the target value, and the first width is greater than the second width.
[0010] On the other hand, a superconducting quantum chip is provided, the superconducting quantum chip comprising:
[0011] Superconducting quantum bits;
[0012] Superconducting resonant cavity as described above;
[0013] The superconducting resonant cavity is connected to the superconducting quantum bit.
[0014] On the other hand, a quantum computing device is provided, the quantum computing device including a superconducting quantum chip, the superconducting quantum chip comprising:
[0015] Superconducting quantum bits;
[0016] Superconducting resonant cavity as described above;
[0017] The superconducting resonant cavity is connected to the superconducting quantum bit.
[0018] On the other hand, a method for determining width combinations is provided, the method comprising:
[0019] Acquire target data, which includes the correspondence between the width combination of the superconducting resonant cavity and the dynamic inductance;
[0020] Determine the target dynamic inductance, which is the dynamic inductance that the superconducting resonant cavity needs to achieve;
[0021] Based on the target dynamic inductance, the target data is queried to obtain the target width combination corresponding to the target dynamic inductance. The target width combination includes a first width and a second width. The first width is the target width of the center electrode of the superconducting resonant cavity, and the second width is the target width of the slit between the center electrode and the ground electrode of the superconducting resonant cavity.
[0022] On the other hand, a means for determining a width combination is provided, the means comprising:
[0023] The data acquisition module is used to acquire target data, which includes the correspondence between the width combination of the superconducting resonant cavity and the dynamic inductance.
[0024] A dynamic inductance acquisition module is used to determine the target dynamic inductance, which is the dynamic inductance that the superconducting resonant cavity needs to achieve.
[0025] The width combination determination module is used to query the target data based on the target dynamic inductance to obtain the target width combination corresponding to the target dynamic inductance. The target width combination includes a first width and a second width. The first width is the target width of the center electrode of the superconducting resonant cavity, and the second width is the target width of the slit between the center electrode and the ground electrode of the superconducting resonant cavity.
[0026] On the other hand, a computer device is provided, the computer device including a processor and a memory, the memory storing at least one computer program, the at least one computer program being loaded and executed by the processor to perform the operations performed by the method for determining the width combination as described above.
[0027] On the other hand, a computer-readable storage medium is provided that stores at least one computer program, which is loaded and executed by a processor to perform the operations performed by the method for determining the width combination as described above.
[0028] On the other hand, a computer program product is provided, including a computer program loaded and executed by a processor to perform the operations performed by the method for determining the width combination as described above.
[0029] In this embodiment, the relationship between the first and second widths of the superconducting resonant cavity and the dynamic inductance is utilized to optimize the width combination of the superconducting resonant cavity. Under the condition that the sum of the first and second widths is not greater than the target value, the first width is greater than the second width. This can reduce the influence of factors such as the fluctuation of the coating thickness of the superconducting material and the fluctuation of etching on the resonant frequency of the superconducting resonant cavity, and reduce the deviation between the actual resonant frequency and the designed resonant frequency of the superconducting resonant cavity, thereby ensuring that the resonant frequency of the superconducting resonant cavity is more accurate and stable. Attached Figure Description
[0030] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0031] Figure 1 This is a schematic diagram of a superconducting resonant cavity provided in an embodiment of this application;
[0032] Figure 2 This is a schematic diagram of the curve of a dynamic inductance changing with a first width, provided in an embodiment of this application;
[0033] Figure 3 This is a schematic diagram showing the proportion of dynamic inductance corresponding to a width combination provided in an embodiment of this application;
[0034] Figure 4 This is a schematic diagram illustrating the deviation corresponding to a width combination provided in an embodiment of this application;
[0035] Figure 5 This is a schematic diagram of a superconducting quantum chip provided in an embodiment of this application;
[0036] Figure 6 This is a flowchart of a method for determining a width combination provided in an embodiment of this application;
[0037] Figure 7This is a schematic diagram of the structure of a width combination determination device provided in an embodiment of this application;
[0038] Figure 8 This is a schematic diagram of the structure of a terminal provided in an embodiment of this application;
[0039] Figure 9 This is a schematic diagram of the structure of a server provided in an embodiment of this application. Detailed Implementation
[0040] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.
[0041] It is understood that the terms "first," "second," etc., used in this application may be used to describe various concepts herein, but unless otherwise stated, these concepts are not limited by these terms. These terms are only used to distinguish one concept from another. For example, without departing from the scope of this application, a first width may be referred to as a second width, and similarly, a second width may be referred to as a first width.
[0042] Here, "at least two" means two or more. For example, "at least two widths" can be any integer number of widths greater than or equal to two, such as two widths, three widths, etc. "Each" refers to each of the at least two widths. For example, "each width" refers to each of the at least two widths. If the at least two widths are three widths, then "each width" refers to each of the three widths.
[0043] It should be noted that the information (including but not limited to user equipment information, user personal information, etc.), data (including but not limited to data used for analysis, data stored, data displayed, etc.) and signals (including but not limited to signals transmitted between user terminals and other devices) involved in this application have all been fully authorized by the user or relevant parties, and the collection, use and processing of the relevant data shall comply with the relevant laws, regulations and standards of the relevant countries and regions.
[0044] Figure 1 This is a schematic diagram of a superconducting resonant cavity provided in an embodiment of this application. See also... Figure 1 The superconducting resonant cavity includes a substrate 101, a center electrode 102 and a ground electrode 103. The center electrode 102 and the ground electrode 103 are located on the substrate 101. The width of the center electrode 102 is a first width w, and the width of the slit between the center electrode 102 and the ground electrode 103 is a second width s.
[0045] Since the total width of the superconducting resonant cavity is limited by the size of the superconducting quantum chip, it restricts the choice of the cavity width. Therefore, taking the maximum allowable width of the superconducting resonant cavity as the target value, the total width of the superconducting resonant cavity is not greater than this target value; that is, the sum of the first width w and the second width s is not greater than the target value. Furthermore, in this embodiment, the first width w is greater than the second width s. The target value can be determined by the chip designer according to requirements, and can be a value such as 16 micrometers or 20 micrometers; this embodiment does not limit this value.
[0046] Additionally, see Figure 1 The height of substrate 101 is h, and the heights of center electrode 102 and ground electrode 103 are d. The width of the two ground electrodes 103 is a third width p, which may be equal to or different from the first width w.
[0047] A superconducting resonant cavity is a resonant cavity made using superconducting materials. The superconducting properties of these materials can significantly reduce the damping loss of the resonant system. Superconducting resonant cavities include types such as coplanar waveguide resonant cavities and superconducting radio frequency cavities. The superconducting resonant cavity in this embodiment is a coplanar waveguide resonant cavity. A coplanar waveguide resonant cavity is a type of resonant cavity made using a coplanar waveguide structure. The coplanar waveguide structure is fabricated on a substrate. Therefore, the center electrode 102 and the ground electrode 102, both made of superconducting materials, are located on the same plane of the substrate 101.
[0048] In one possible implementation, a superconducting resonant cavity has two ground electrodes 103, which are located on either side of a central electrode 102, and the width of the slit between the central electrode 102 and the two ground electrodes 103 is equal.
[0049] In this possible implementation, the total width of the superconducting resonant cavity is equal to the sum of the first width w and twice the second width s. Therefore, the sum of the first width w and twice the second width s is not greater than the target value.
[0050] The inductance per unit length of a superconducting resonant cavity is determined by magneto-inductance and dynamic inductance. Dynamic inductance is a property of superconductors, originating from the motion of Cooper pairs (the fundamental building blocks of superconductivity) within the superconducting material. Dynamic inductance is a form of inductance generated by the motion of Cooper pairs and is related to the superfluidity of the superconductor. The inductance per unit length of a superconducting resonant cavity satisfies the following formula:
[0051]
[0052]
[0053] Where L represents the inductance per unit length of the superconducting resonant cavity, L mL represents the magneto-electric inductance per unit length of the superconducting resonant cavity. k denoted by μ0, which represents the dynamic inductance per unit length of the superconducting resonant cavity; μ0 represents the vacuum permeability; k represents the proportion of the first width w in the total width w+s; K(k) represents the first-kind complete elliptic integral; d represents the thickness of the superconducting material, i.e. the thickness of the center electrode 102 and the ground electrode 103; λ represents the penetration depth; and g(s, w, d) represents the geometric factor.
[0054] Using the above formula, the first width w and the second width s can be determined in relation to the dynamic inductance L of the superconducting resonant cavity. k The relationship between them Figure 2 This is a schematic diagram of the curve of a dynamic inductance changing with a first width, provided in an embodiment of this application. Figure 2 The horizontal axis represents the first width w, and the vertical axis represents the dynamic inductance per unit length of the superconducting resonant cavity L. k ,like Figure 2 As shown, when the value of the second width s is fixed, the dynamic inductance L k It decreases as the first width w increases. Furthermore, it can also be determined using the above formula that when the value of the first width w is fixed, the dynamic inductance L... k It increases as the second width s increases.
[0055] Figure 3 This is a schematic diagram illustrating the proportion of dynamic inductance corresponding to a width combination provided in an embodiment of this application. The width combination refers to the combination of the first width w and the second width s, and the proportion of dynamic inductance refers to the dynamic inductance L. k The proportion of the total inductance L, that is, the proportion is L k / (L m +L k ), Figure 3 The x-axis represents the second width s, and the y-axis represents the first width w. The units for both the x-axis and y-axis are micrometers (μm). Figure 3 The color at each position represents the L corresponding to the first width w and the second width s. k / (L m +L k The size of ). Therefore, according to Figure 3 The width combination corresponding to a smaller dynamic inductance can be obtained, which means that if the superconducting resonant cavity adopts the first width w and the second width s in this width combination, a smaller dynamic inductance can be achieved.
[0056] Taking a target value of 16 micrometers and a 100-nanometer-thick tantalum film as the superconducting material of the superconducting resonant cavity as an example, a sample of the superconducting resonant cavity was prepared, and the actual resonance frequency of the sample was determined, so as to be able to determine the deviation between the designed resonance frequency and the actual resonance frequency based on the superconducting resonant cavity. Figure 4This is a schematic diagram illustrating the deviation corresponding to a width combination provided in an embodiment of this application. Figure 4 The horizontal axis represents the width combination consisting of the first width w and the second width s, denoted as "sws," under the condition that w + 2s = 16. The vertical axis represents the deviation, i.e., the deviation between the actual resonant frequency and the designed resonant frequency of the superconducting resonant cavity. The unit of the horizontal axis is micrometers, and the unit of the vertical axis is megahertz. Figure 4 As shown, under the condition w+2s=16, the larger w is and the smaller s is, the smaller the deviation.
[0057] In summary Figures 2 to 4 It can be seen that by using a combination of a larger first width w and a smaller second width s in the superconducting resonant cavity, a smaller dynamic inductance can be obtained. The influence of factors such as the fluctuation of the superconducting material coating thickness and the etching fluctuation will also be reduced. In other words, by using a combination of a larger first width w and a smaller second width s in the superconducting resonant cavity, the influence of factors such as the fluctuation of the superconducting material coating thickness and the etching fluctuation on the resonant frequency of the superconducting resonant cavity can be reduced, thereby reducing the deviation between the actual resonant frequency and the designed resonant frequency of the superconducting resonant cavity, and thus obtaining a more accurate and stable resonant frequency.
[0058] Therefore, in this embodiment of the application, the first width w is greater than the second width s, provided that the sum of the first width w and the second width s is not greater than the target value.
[0059] In superconducting quantum chips, the readout of superconducting qubits (qubits) is determined by the frequency of the superconducting resonant cavity connected to the qubit. As the number of superconducting qubits increases, the number of superconducting resonant cavities also increases. Therefore, the resonant frequency of the superconducting resonant cavity is crucial to the superconducting quantum chip and requires precise design to prevent congestion or deviation, which could affect the chip's operation. While simulation software can treat the superconducting material used to fabricate the resonant cavity as a perfect conductor, quickly and easily obtaining the required resonant frequency, in actual fabrication, the resonant frequency is determined by a dynamic inductance. This dynamic inductance is easily affected by factors such as the thickness of the superconducting material coating, leading to a significant deviation between the actual and designed resonant frequencies. Especially when multiple superconducting resonant cavities are included on the same superconducting quantum chip, the resulting frequency deviations can cause excessive congestion between the resonant frequencies of different cavities, hindering the normal operation of the superconducting quantum chip.
[0060] In this embodiment, the relationship between the first width w and the second width s of the superconducting resonant cavity and the dynamic inductance is utilized to optimize the width combination of the superconducting resonant cavity. Under the condition that the sum of the first width w and the second width s is not greater than the target value, the first width w is greater than the second width s. This can reduce the influence of factors such as the fluctuation of the coating thickness of the superconducting material and the fluctuation of etching on the resonance frequency of the superconducting resonant cavity, and reduce the deviation between the actual resonance frequency and the designed resonance frequency of the superconducting resonant cavity, thereby ensuring that the resonance frequency of the superconducting resonant cavity is more accurate and stable.
[0061] In one possible implementation, a microwave frequency of 4–8 GHz (gigahertz) is used in the superconducting quantum chip, and the width of the superconducting resonant cavity is much smaller than the microwave wavelength. In this case, the quasi-TEM mode propagates in the superconducting resonant cavity.
[0062] Among them, the TEM (Transverse-Electric field-Magnetic field) mode refers to a mode in which there are no electric and magnetic field components in the propagation direction. It is an ideal mode, but in practical applications, the TEM mode is not perfect. The quasi-TEM mode refers to a mode in which the electric and magnetic field components in the propagation direction are much smaller than the components in the direction perpendicular to the propagation direction.
[0063] In one possible implementation, the thickness of the center electrode 102 and the ground electrode 103 is 100–200 nanometers. Of course, in other possible implementations, the thickness of the center electrode 102 and the ground electrode 103 can be other thicknesses, and this application embodiment does not limit this.
[0064] In one possible implementation, the superconducting materials for the center electrode 102 and the ground electrode 103 are tantalum or niobium.
[0065] The use of tantalum or niobium films is becoming increasingly widespread. However, for superconducting resonant cavities made using tantalum or niobium films, the dynamic inductance fluctuates significantly with the thickness of the coating. Furthermore, the coating equipment also has an error of ±5% during film preparation, which cannot be resolved. Therefore, the influence of dynamic inductance cannot be ignored. However, by using the width combination optimized in the embodiments of this application, a resonant cavity that is insensitive to dynamic inductance can be obtained, reducing the influence of dynamic inductance on the position of the resonant frequency of the resonant cavity.
[0066] Of course, in other possible implementations, the superconducting materials of the center electrode 102 and the ground electrode 103 can also be other materials, and this application embodiment does not limit this.
[0067] Based on the above embodiments, the present application also provides the following possible implementations:
[0068] The target value is 16 micrometers, and the first and second widths have the following dimensions:
[0069] 1. The first width is 10 micrometers, and the second width is 3 micrometers; or,
[0070] 2. The first width is 8 micrometers, and the second width is 4 micrometers; or,
[0071] 3. The first width is 6 micrometers, and the second width is 5 micrometers.
[0072] This application provides three width combinations that can be used in superconducting resonant cavities. Under the condition that the sum of the first width and the second width is not greater than the target value, the first width is greater than the second width. This can reduce the influence of factors such as the fluctuation of the coating thickness and etching of the superconducting material on the resonance frequency of the superconducting resonant cavity, and reduce the deviation between the actual resonance frequency and the designed resonance frequency of the superconducting resonant cavity, thereby ensuring that the resonance frequency of the superconducting resonant cavity is more accurate and stable.
[0073] Based on the above embodiments, this application also provides a superconducting quantum chip. Figure 5 This is a schematic diagram of a superconducting quantum chip provided in an embodiment of this application. See also... Figure 5 The superconducting quantum chip includes: a superconducting quantum bit 501 and a superconducting resonant cavity 502, as described above. Figure 1 The superconducting resonant cavity in the illustrated embodiment will not be described in detail here. Furthermore, since the superconducting resonant cavity 502 is connected to the superconducting quantum bit 501, the state of the superconducting quantum bit 501 can be read through the superconducting resonant cavity 502.
[0074] A superconducting quantum bit (qubit) is a qubit based on a superconducting circuit. It operates by using a Josephson junction to control the interactions between qubits. Due to its high fidelity and low distortion rate, superconducting qubits are considered a strong candidate for realizing large-scale quantum computing. A Josephson junction, also known as a superconducting tunnel junction, is a structure consisting of two superconductors sandwiched by a very thin barrier layer. In this structure, superconducting electrons can tunnel from one superconductor through a semiconductor or insulating film to the other superconductor via the tunneling effect.
[0075] In one possible implementation, see [link to relevant documentation]. Figure 5 The superconducting quantum bit 501 includes a capacitor 5011 and a Josephson junction 5012. This type of superconducting quantum bit is called a charge quantum bit.
[0076] In another possible implementation, the superconducting quantum bit 501 includes a loop inductor and a Josephson junction; this type of superconducting quantum bit is called a flux quantum bit. Alternatively, the superconducting quantum bit 501 includes a Josephson junction; this type of superconducting quantum bit is called a phase quantum bit. Alternatively, the superconducting quantum bit 501 can also be a Transmon (magnetic) quantum bit, a C-type shunt flux quantum bit, a hybrid quantum bit, etc. The embodiments of this application do not limit the type of superconducting quantum bit.
[0077] In one possible implementation, see [link to relevant documentation]. Figure 5 The superconducting quantum chip includes a lead connector 503 and a filter 504. The lead connector 503 is connected to the filter 504, and the filter 504 is connected to the superconducting resonant cavity 502.
[0078] Among them, the lead connector 503 can connect the connector on the superconducting quantum chip to the port on the sample box of the superconducting quantum chip by wire bonding, and Figure 5 Taking the superconducting quantum chip using reflective readout as an example, the superconducting quantum chip includes a lead connector 503. In other possible implementations, the superconducting quantum chip may include a greater number of lead connectors. The embodiments of this application do not limit the number of lead connectors.
[0079] Additionally, the lead connector 503 is connected to the filter 504 via a read line, and the filter 504 is connected to the superconducting resonant cavity 502 via the read line. The function of the filter 504 is to filter out stray signals in the read line, retaining only the signal near the superconducting resonant cavity 502. The bandwidth of the filter 504 is 500MHz (megahertz) or other bandwidths differing from 500MHz by a preset value, or the bandwidth range of the filter 504 is a range centered on 500MHz, the length of which is twice a preset value, which can be 10MHz or other values. The filter 504 filters the signal in the read line according to its bandwidth, thereby outputting the filtered signal through the lead connector 503.
[0080] Due to the presence of filter 504, there are high requirements for the resonant frequency of the superconducting resonant cavity. If the resonant frequency of the superconducting resonant cavity is outside the bandwidth range of filter 504, the signal of the superconducting resonant cavity will be filtered out, resulting in a significant deterioration in the performance of the superconducting quantum chip. Therefore, the resonant frequency of the superconducting resonant cavity is required to be within the bandwidth range of filter 504.
[0081] In one possible implementation, the superconducting quantum chip includes a filter, n superconducting qubits, and n superconducting resonant cavities, where n is an integer greater than 1. Each superconducting resonant cavity is connected to each superconducting qubit, and the filter is connected to each of the n superconducting resonant cavities. Therefore, the states of the n superconducting qubits can be read through the n superconducting resonant cavities. Additionally, the superconducting quantum chip may also include lead connectors or other devices connected to the filter; these will not be elaborated further in the embodiments of this application.
[0082] For example, Figure 5 Taking n=5 as an example, a superconducting quantum chip includes a filter, 5 superconducting resonant cavities, and 5 superconducting qubits.
[0083] In this embodiment, the relationship between the first and second widths of the superconducting resonant cavity and the dynamic inductance is utilized to optimize the width combination of the superconducting resonant cavity. Under the condition that the sum of the first and second widths does not exceed a target value, the first width is greater than the second width. This reduces the impact of fluctuations in the coating thickness and etching of the superconducting material on the resonant frequency of the superconducting resonant cavity, and also reduces the deviation between the actual and designed resonant frequencies, thus ensuring a more accurate and stable resonant frequency. Therefore, applying the superconducting resonant cavity to superconducting quantum chips can effectively improve the stability and success rate of superconducting quantum chips, making it more suitable for large-scale superconducting quantum chip fabrication.
[0084] Based on the above embodiments, this application also provides a quantum computing device, which includes a superconducting quantum chip. The superconducting quantum chip includes a superconducting quantum bit and a superconducting resonant cavity, with the superconducting resonant cavity connected to the superconducting quantum bit. The superconducting resonant cavity is as described above. Figure 1 The superconducting resonant cavity in the illustrated embodiment.
[0085] Figure 6 This is a flowchart illustrating a method for determining a width combination according to an embodiment of this application. This embodiment is executed by a computer device. See also... Figure 6 The method includes:
[0086] 601. The computer equipment acquires target data, which includes the correspondence between the width combination of the superconducting resonant cavity and the dynamic inductance.
[0087] The computer device can be a smartphone, tablet, laptop, desktop computer, etc., and this application embodiment does not limit this to any particular type. This application embodiment is applied to scenarios where designers need to determine the width combination to be used in a superconducting resonant cavity, and the computer device can be any device used by the designer.
[0088] In this embodiment, the computer device establishes a correspondence between the width combinations of the superconducting resonant cavity and the dynamic inductance. The width combinations include the width of the center electrode of the superconducting resonant cavity and the width of the slit between the center electrode and the ground electrode. The target data includes this correspondence and is in the form of a table or file. The computer device stores the target data or downloads it from other devices.
[0089] In the embodiments of this application, the combination of widths of the superconducting resonant cavity and the dynamic inductance satisfy the following formula:
[0090]
[0091]
[0092] Among them, L k Let represent the dynamic inductance per unit length of the superconducting resonant cavity, w represent the width of the center electrode, s represent the width of the slit between the center electrode and the ground electrode, μ0 represent the vacuum permeability, k represent the proportion of w in the total width w+s, K(k) represent the first-kind elliptic integral, d represent the thickness of the superconducting material, i.e. the thickness of the center electrode and the ground electrode, λ represent the penetration depth, and g(s, w, d) represent the geometric factor.
[0093] Therefore, using the above formula, the dynamic inductance corresponding to one or more width combinations can be determined, thus establishing the aforementioned correspondence, which is then stored in the target data. The process of establishing this correspondence can be performed by the computer device or by other devices.
[0094] In one possible implementation, since the total width of the superconducting resonant cavity is limited by the size of the superconducting quantum chip, the choice of the cavity width is constrained. Therefore, taking the maximum allowable width of the superconducting resonant cavity as the target value as an example, the following condition must be met: the total width of the superconducting resonant cavity is not greater than this target value, that is, the sum of w and s is not greater than the target value. Therefore, for width combinations that meet this condition, the dynamic inductance corresponding to that width combination is calculated, and the correspondence is established and stored in the target data. For width combinations that do not meet this condition, the dynamic inductance is not calculated to save workload and improve processing efficiency. The target value can be determined by the chip designer according to requirements, and can be 16 micrometers or 20 micrometers, etc. This application embodiment does not limit this.
[0095] In one possible implementation, the total width of the superconducting resonant cavity is equal to the sum of w and twice s, so the sum of w and twice s is not greater than the target value.
[0096] 602. The computer equipment determines the target dynamic inductance, which is the dynamic inductance that the superconducting resonant cavity needs to achieve.
[0097] The target dynamic inductance can be randomly determined by computer equipment or determined by the designer according to design requirements. The target dynamic inductance can be any value. However, in practical applications, the smaller the dynamic inductance of the superconducting resonant cavity, the less it is affected by factors such as fluctuations in coating thickness or etching. Therefore, computer equipment can determine a smaller target dynamic inductance.
[0098] 603. The computer equipment queries the target data based on the target dynamic inductance to obtain the target width combination corresponding to the target dynamic inductance. The target width combination includes a first width and a second width. The first width is the target width of the center electrode of the superconducting resonant cavity, and the second width is the target width of the slit between the center electrode and the ground electrode of the superconducting resonant cavity.
[0099] Once the target dynamic inductance is determined, the target data can be queried to obtain the target width combination corresponding to the target dynamic inductance. The target width combination includes a first width and a second width, indicating that when the superconducting resonant cavity uses the first width as the target width of the center electrode and the second width as the target width of the slit between the center electrode and the ground electrode, the dynamic inductance of the superconducting resonant cavity is the target dynamic inductance.
[0100] In one possible implementation, after the computer device determines the target width combination corresponding to the target dynamic inductance, it can display the target width combination, or send the target width combination to other devices of the designer for display. By viewing the target width combination, the designer can understand the required width and thus decide whether to use that target width combination to design the superconducting resonant cavity.
[0101] In one possible implementation, the computer device can execute steps 602-603 once or multiple times to obtain different combinations of target widths corresponding to the target dynamic inductance.
[0102] In this embodiment, by first establishing the correspondence between the width combination of the superconducting resonant cavity and the dynamic inductance, the target width combination of the superconducting resonant cavity can be determined by querying the target data including the correspondence, based on the target dynamic inductance to be achieved by the superconducting resonant cavity. This operation is very convenient, eliminating the need for designers to calculate the target width combination based on the target dynamic inductance, thus reducing the workload of designers, saving labor costs, and improving efficiency.
[0103] Figure 7 This is a schematic diagram of a width combination determination device provided in an embodiment of this application. See also... Figure 7 The device includes:
[0104] The data acquisition module 701 is used to acquire target data, which includes the correspondence between the width combination of the superconducting resonant cavity and the dynamic inductance.
[0105] The dynamic inductance acquisition module 702 is used to determine the target dynamic inductance, which is the dynamic inductance that the superconducting resonant cavity needs to achieve.
[0106] The width combination determination module 703 is used to query target data based on the target dynamic inductance to obtain the target width combination corresponding to the target dynamic inductance. The target width combination includes a first width and a second width. The first width is the target width of the center electrode of the superconducting resonant cavity, and the second width is the target width of the slit between the center electrode and the ground electrode of the superconducting resonant cavity.
[0107] In this embodiment, by first establishing the correspondence between the width combination of the superconducting resonant cavity and the dynamic inductance, the target width combination of the superconducting resonant cavity can be determined by querying the target data including the correspondence, based on the target dynamic inductance to be achieved by the superconducting resonant cavity. The operation is very convenient, eliminating the need for designers to calculate the target width combination based on the target dynamic inductance, thus reducing the workload of designers, saving labor costs, and improving efficiency.
[0108] It should be noted that the apparatus provided in the above embodiments is only an example of the division of the above functional modules. In practical applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the computer device can be divided into different functional modules to complete all or part of the functions described above. In addition, the width combination determination apparatus and the width combination determination method embodiments provided in the above embodiments belong to the same concept, and their specific implementation process can be found in the method embodiments, which will not be repeated here.
[0109] This application also provides a computer device including a processor and a memory. The memory stores at least one computer program, which is loaded and executed by the processor to perform the operations performed in the method for determining the width combination described above.
[0110] Figure 8 A schematic diagram of a terminal 800 provided in an exemplary embodiment of this application is shown. This terminal can be a quantum computing device or a computer device as described in the above embodiments.
[0111] Terminal 800 includes a processor 801 and a memory 802.
[0112] Processor 801 may include one or more processing cores, such as a quad-core processor, an octa-core processor, etc. Processor 801 may be implemented using at least one hardware form selected from DSP (Digital Signal Processing), FPGA (Field Programmable Gate Array), and PLA (Programmable Logic Array). Processor 801 may also include a main processor and a coprocessor. The main processor, also known as a CPU (Central Processing Unit), is used to process data in the wake-up state; the coprocessor is a low-power processor used to process data in the standby state. In some embodiments, processor 801 may integrate a GPU (Graphics Processing Unit), which is responsible for rendering and drawing the content to be displayed on the screen. In some embodiments, processor 801 may also include an AI (Artificial Intelligence) processor, which is used to handle computational operations related to machine learning.
[0113] Memory 802 may include one or more computer-readable storage media, which may be non-transitory. Memory 802 may also include high-speed random access memory and non-volatile memory, such as one or more disk storage devices or flash memory devices. In some embodiments, the non-transitory computer-readable storage media in memory 802 are used to store at least one computer program for use by processor 801 to implement the method for determining the width combination provided in the method embodiments of this application.
[0114] In some embodiments, the terminal 800 may also optionally include a peripheral device interface 803 and at least one peripheral device. The processor 801, memory 802, and peripheral device interface 803 can be connected via a bus or signal line. Each peripheral device can be connected to the peripheral device interface 803 via a bus, signal line, or circuit board. Optionally, the peripheral device includes at least one of a radio frequency circuit 804, a display screen 805, a camera assembly 806, and a power supply 807.
[0115] Peripheral interface 803 can be used to connect at least one I / O (Input / Output) related peripheral device to processor 801 and memory 802.
[0116] The radio frequency (RF) circuit 804 is used to receive and transmit RF (Radio Frequency) signals, also known as electromagnetic signals. The RF circuit 804 communicates with communication networks and other communication devices via electromagnetic signals. The RF circuit 804 converts electrical signals into electromagnetic signals for transmission, or converts received electromagnetic signals into electrical signals.
[0117] Display screen 805 is used to display a UI (User Interface). This UI may include graphics, text, icons, video, and any combination thereof. When display screen 805 is a touch display screen, it also has the ability to acquire touch signals on or above the surface of display screen 805.
[0118] The camera assembly 806 is used to capture images or videos. Optionally, the camera assembly 806 includes a front-facing camera and a rear-facing camera. The front-facing camera is located on the front panel of the terminal 800, and the rear-facing camera is located on the back of the terminal 800.
[0119] Power supply 807 is used to supply power to the various components in terminal 800. Power supply 807 can be AC power, DC power, a disposable battery, or a rechargeable battery.
[0120] Those skilled in the art will understand that Figure 8 The structure shown does not constitute a limitation on terminal 800 and may include more or fewer components than shown, or combine certain components, or use different component arrangements.
[0121] Figure 9 This is a schematic diagram of a server structure provided in an embodiment of this application. The server can be the quantum computing device or computer device described in the above embodiments. The server 900 can vary significantly due to different configurations or performance, and may include one or more Central Processing Units (CPUs) 901 and one or more memories 902. The memories 902 store at least one computer program, which is loaded and executed by the processor 901 to implement the methods provided in the various method embodiments described above. Of course, the server may also have wired or wireless network interfaces, a keyboard, and input / output interfaces for input and output. The server may also include other components for implementing device functions, which will not be elaborated upon here.
[0122] This application also provides a computer-readable storage medium storing at least one computer program, which is loaded and executed by a processor to implement the operations performed by the width combination determination method of the above embodiments.
[0123] This application also provides a computer program product, including a computer program loaded and executed by a processor to perform the operations performed by the width combination determination method as described in the above embodiments.
[0124] Those skilled in the art will understand that all or part of the steps of the above embodiments can be implemented by hardware or by a program instructing related hardware. The program can be stored in a computer-readable storage medium, such as a read-only memory, a disk, or an optical disk.
[0125] The above description is only an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present application should be included within the protection scope of the present application.
Claims
1. A superconducting resonant cavity, characterized in that, The superconducting resonant cavity includes: a substrate, a central electrode, and a ground electrode; The center electrode and the ground electrode are located on the substrate; The width of the central electrode is a first width; The width of the slit between the center electrode and the ground electrode is the second width; Wherein, the sum of the first width and the second width is not greater than the target value, and the first width is greater than the second width.
2. The superconducting resonant cavity according to claim 1, characterized in that, The target value is 16 micrometers; The first width is 10 micrometers, and the second width is 3 micrometers; or, The first width is 8 micrometers, and the second width is 4 micrometers; or, The first width is 6 micrometers, and the second width is 5 micrometers.
3. The superconducting resonant cavity according to claim 1, characterized in that, The sum of the first width and twice the second width is not greater than the target value.
4. The superconducting resonant cavity according to claim 1, characterized in that, The thickness of the center electrode and the ground electrode is 100–200 nanometers.
5. The superconducting resonant cavity according to claim 1, characterized in that, The superconducting materials of the center electrode and the ground electrode are tantalum or niobium.
6. A superconducting quantum chip, characterized in that, The superconducting quantum chip includes: Superconducting quantum bits; The superconducting resonant cavity as described in any one of claims 1-5; The superconducting resonant cavity is connected to the superconducting quantum bit.
7. The superconducting quantum chip according to claim 6, characterized in that, The superconducting quantum bit includes a capacitor and a Josephson junction.
8. The superconducting quantum chip according to claim 6, characterized in that, The superconducting quantum chip includes a lead connector and a filter, the lead connector being connected to the filter, and the filter being connected to the superconducting resonant cavity.
9. The superconducting quantum chip according to claim 6, characterized in that, The superconducting quantum chip includes one filter, n superconducting qubits, and n superconducting resonant cavities, where n is an integer greater than 1. Each of the superconducting resonant cavities is connected to each of the superconducting qubits; The filter is connected to each of the n superconducting resonant cavities.
10. A quantum computing device, characterized in that, The quantum computing device includes a superconducting quantum chip, which comprises: Superconducting quantum bits; The superconducting resonant cavity as described in any one of claims 1-5; The superconducting resonant cavity is connected to the superconducting quantum bit.
11. A method for determining width combinations, characterized in that, The method includes: Acquire target data, which includes the correspondence between the width combination of the superconducting resonant cavity and the dynamic inductance; Determine the target dynamic inductance, which is the dynamic inductance that the superconducting resonant cavity needs to achieve; Based on the target dynamic inductance, the target data is queried to obtain the target width combination corresponding to the target dynamic inductance. The target width combination includes a first width and a second width. The first width is the target width of the center electrode of the superconducting resonant cavity, and the second width is the target width of the slit between the center electrode and the ground electrode of the superconducting resonant cavity.
12. A device for determining width combinations, characterized in that, The device includes: The data acquisition module is used to acquire target data, which includes the correspondence between the width combination of the superconducting resonant cavity and the dynamic inductance. A dynamic inductance acquisition module is used to determine the target dynamic inductance, which is the dynamic inductance that the superconducting resonant cavity needs to achieve. The width combination determination module is used to query the target data based on the target dynamic inductance to obtain the target width combination corresponding to the target dynamic inductance. The target width combination includes a first width and a second width. The first width is the target width of the center electrode of the superconducting resonant cavity, and the second width is the target width of the slit between the center electrode and the ground electrode of the superconducting resonant cavity.
13. A computer device, characterized in that, The computer device includes a processor and a memory, the memory storing at least one computer program, which is loaded and executed by the processor to perform the operations performed by the method for determining the width combination as described in claim 11.
14. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores at least one computer program, which is loaded and executed by a processor to perform the operations performed by the method for determining the width combination as described in claim 11.
15. A computer program product, comprising a computer program, characterized in that, The computer program is loaded and executed by a processor to perform the operations performed by the method for determining the width combination as described in claim 11.