Sensor, method for producing a sensor, electronic device, and method for operating a sensor

Abstract

A sensor (10) comprises an arrangement of sensing elements (1001, 1002,..., 100n). According to the invention, the sensor elements (1001, 1002,..., 100n) each have an individually readable detection element (1051, 1052,..., 105n) and a filter element (1091, 1092,..., 109n) arranged above the detection element, the filter element (1091, 1092,..., 109n) comprising a first compound semiconductor material (135) having a component ratio that varies in the vertical direction. In this case, the at least two filter elements (1091, 1092,..., 109n) have different layer thicknesses of the first compound semiconductor material (135) from each other.

Description

Technical Field

[0001] This disclosure relates to a sensor, and more particularly to a multispectral sensor suitable for detecting incident electromagnetic radiation in different wavelength ranges. Background Technology

[0002] Sensors, such as those for detecting ultraviolet radiation, are based on semiconductor diodes suitable for converting incident electromagnetic radiation into photocurrent. There is a general search for ideas by which the detected radiation can be resolved and quantified according to its wavelength. Summary of the Invention

[0003] The purpose of this invention is to provide an improved sensor and an improved method for manufacturing the sensor.

[0004] According to the implementation method, the objective is achieved through the subject matter of the independent claim. Improvements are defined in the dependent claims.

[0005] According to one embodiment, the sensor includes a means of sensing elements. Each sensing element has a separately readable detection element and a filtering element disposed above the detection element. The filtering element comprises a first compound semiconductor material having a component ratio that varies along a vertical direction. The first compound semiconductor material is a group III-V semiconductor material, comprising group III elements and at least one group V element, and the proportion of the group III element varies along the vertical direction. Here, the proportion of at least one group V element remains greater than zero. At least two filtering elements have layer thicknesses of the first compound semiconductor material that are different from each other. For example, the filtering element is made of the first compound semiconductor material. For example, the compound semiconductor material may be Al. x Ga 1-x As, where x varies along the vertical direction. The characteristic that the share of at least one group V element remains greater than zero can imply that the group V element does not vary along the vertical direction. For example, the following case can be excluded: one part of the filter element contains an As compound semiconductor, and another part of the filter element contains a P-type or N-type compound semiconductor.

[0006] According to one embodiment, the sensor further includes a covering element disposed between two adjacent filter elements. For example, the covering element may cover a portion of the surface of the filter element.

[0007] According to one embodiment, the sensor also includes a filter layer above the filter element.

[0008] For example, the component ratio of the first compound semiconductor material can be varied continuously. According to other embodiments, the component ratio can be varied in a stepwise manner.

[0009] According to an embodiment, the detection element can be formed in a second compound semiconductor material. At least one component element of the second compound semiconductor material can be a component of the first compound semiconductor material.

[0010] According to other embodiments, the detection element may be constructed in a semiconductor material different from the first compound semiconductor material.

[0011] At least two detection elements can be identical to each other.

[0012] According to an embodiment, the band gap of the first compound semiconductor material can decrease as the distance between it and the surface of the corresponding detection element increases.

[0013] According to an embodiment, the first compound semiconductor material layer may additionally include impurities, lattice vacancies, lattice defects, or semiconductor materials with indirect band gaps.

[0014] According to an embodiment, the sensor may also have a transparent, insulating passivation layer above the first compound semiconductor layer, wherein the passivation layer contains impurities, lattice vacancies, lattice defects, or a semiconductor material with an indirect bandgap.

[0015] Other embodiments relate to a method for manufacturing a sensor having means of sensing elements, each sensing element having an individually readable detection element and a filtering element disposed above its respective detection element. The method includes: constituting a plurality of filtering elements, each filtering element comprising a first compound semiconductor material having a region having a component ratio varying along a vertical direction. The first compound semiconductor material is a group III-V semiconductor material comprising a group III element and at least one group V element, wherein the proportion of the group III element varies along the vertical direction, and the proportion of the at least one group V element remains greater than zero. The method further includes: partially removing the first compound semiconductor material from at least one filtering element such that different layer thicknesses of the first compound semiconductor material are achieved above at least two detection elements.

[0016] For example, the configuration of multiple filtering elements may include applying a first compound semiconductor material over the sensing element. Subsequently, after applying the first compound semiconductor material, the first compound semiconductor material may be partially removed.

[0017] According to the implementation method, after partially removing the first compound semiconductor material, a filtering element can be applied above the detection element.

[0018] Other embodiments relate to an electronic device that includes a sensor as defined above.

[0019] Electronic equipment can be selected from exploration satellites or analysis equipment.

[0020] Other embodiments relate to a method for operating a sensor as defined above. The method includes: reading detection signals from at least two sensing elements, each having a different layer thickness of a filter element; and obtaining a spectral signal from the difference between the detection signals. Attached Figure Description

[0021] The accompanying drawings are provided for understanding embodiments of the invention. The drawings illustrate and explain the embodiments and, together with the description, serve to elucidate those embodiments. Other embodiments and numerous anticipated advantages will arise directly from the following detailed description. Elements and structures shown in the drawings are not necessarily shown to scale relative to each other. The same reference numerals refer to the same or corresponding elements and structures.

[0022] Figure 1A A schematic cross-sectional view of a sensor according to an embodiment is shown.

[0023] Figure 1B A front view of the sensor according to an embodiment is shown.

[0024] Figure 1C A rear view of the sensor according to an embodiment is shown.

[0025] Figure 1D The diagram illustrates the principle of spectral resolution used for the detected electromagnetic radiation.

[0026] Figure 2A A cross-sectional view of a sensor according to other embodiments is shown.

[0027] Figure 2B A cross-sectional view of a sensor according to other embodiments is shown.

[0028] Figure 2C A cross-sectional view of a sensor according to other embodiments is shown.

[0029] Figures 3A to 3C The illustration shows a method for manufacturing a sensor according to an embodiment.

[0030] Figure 4A and Figure 4B The illustration shows a method for manufacturing a sensor according to other embodiments.

[0031] Figure 5A An example of a sensor with control circuitry is shown.

[0032] Figure 5B This section summarizes the methods used to manufacture sensors.

[0033] Figure 5C The illustration shows an electronic device according to an embodiment.

[0034] Figure 5D This summarizes the methods used to operate the sensor. Detailed Implementation

[0035] The following detailed description refers to the accompanying drawings, which form part of the disclosure and illustrate particular embodiments for illustrative purposes. In this context, directional terms such as “upper side,” “bottom,” “front side,” “rear side,” “above,” “up,” “front,” “rear,” “front part,” “rear part,” etc., refer to the orientation in the drawings just described. Because components of the embodiments may be positioned in different orientations, directional terms are for illustrative purposes only and are in no way construed as limiting.

[0036] The description of the embodiments is not limiting, as other embodiments exist and structural or logical changes can be made without departing from the scope defined by the patent claims. In particular, elements of the embodiments described below can be combined with elements of other described embodiments, unless otherwise stated in the context.

[0037] The terms "wafer" or "semiconductor substrate" as used in the following description can include any semiconductor-based structure having a semiconductor surface. Wafers and structures should be understood to include doped and undoped semiconductors, epitaxial semiconductor layers optionally carried by a substrate, and other semiconductor structures. For example, a layer made of a first semiconductor material can be grown on a growth substrate made of a second semiconductor material, such as a GaAs substrate, a GaN substrate, or a Si substrate, or on a growth substrate made of an insulating material, such as a sapphire substrate.

[0038] Depending on the intended use, semiconductors can be based on direct or indirect semiconductor materials. Examples of semiconductor materials particularly suitable for generating electromagnetic radiation include: nitride semiconductor compounds, which can generate ultraviolet, blue, or longer wavelength light, such as GaN, InGaN, AlN, AlGaN, AlGaInN, and AlGaInBN; phosphide semiconductor compounds, which can generate green or longer wavelength light, such as GaAsP, AlGaInP, GaP, and AlGaP; and other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga2O3, diamond, hexagonal boron nitride, and combinations thereof. The stoichiometry of compound semiconductor materials can vary. Other examples of semiconductor materials may include silicon, silicon-germanium, and germanium. In the context of this specification, the term "semiconductor" also includes organic semiconductor materials.

[0039] The term "substrate" typically includes insulating, conductive, or semiconductor substrates.

[0040] The term "vertical," as it is used in this specification, shall describe an orientation that extends substantially perpendicular to the first surface of the substrate or semiconductor body. A vertical direction may, for example, correspond to the growth direction during layer growth.

[0041] The terms "lateral" and "horizontal," as used in this specification, shall describe an orientation or direction that extends substantially parallel to a first surface of the substrate or semiconductor body. This could be, for example, the surface of a wafer or die.

[0042] The horizontal direction can be located, for example, in a plane perpendicular to the growth direction during layer growth.

[0043] In the context of this specification, the term "electrical connection" means a low-ohm electrical connection between connected components. Electrically connected components do not necessarily have to be directly connected to each other. Other components may be positioned between electrically connected components.

[0044] The term "electrical connection" also includes tunnel contacts between connected elements.

[0045] Figure 1A A cross-sectional view of the sensor 10 according to an embodiment is shown. The sensor includes sensing elements 1001, 1002, ..., 100... n The device. Sensing element 100 i Each sensing element in the system includes a individually readable detection element 105. i and set in the detection element 105 i The filter element 109 abovei Filter element 109 i The device includes a first compound semiconductor material 135, which has a region 112 with a component ratio varying along a vertical direction. At least two filter elements 109 are also included. i 109 i+1 The layers have different semiconductor material 135 thicknesses.

[0046] As in Figure 1A As illustrated in the diagram, each of the 105 detection elements i It may include a semiconductor diode. For example, the semiconductor diode may be implemented as a PN diode or a PIN diode. Detection element 105 i For example, it can have a p-type semiconductor layer 115, an i-type semiconductor layer 116, and an n-type semiconductor layer 120 arranged in a stacked manner. The i-type semiconductor layer 116 can be omitted. For example, the surface of the p-type semiconductor layer 115 and the corresponding filter element 109 are arranged in a stacked manner. i A first intermediate layer 123 may be disposed between the layers. The first intermediate layer 123 may include multiple layers. The first intermediate layer 123 may have suitable layers, such as buffer layers or other layers. Furthermore, a second intermediate layer 125 may be disposed adjacent to the exposed surface of the n-type semiconductor layer 120. The second intermediate layer 125 may have multiple layers. The second intermediate layer 125 may include suitable superlattice structures, such as those for adapting the lattice constant or for lattice constant mismatch compensation, buffer layers, stress-reducing layer sequences, and other structures.

[0047] p-type contact element 114 is electrically connected to p-type semiconductor layer 115. n-type contact element 121 is electrically connected to n-type semiconductor layer 120. The p-type contact element 114 and n-type contact element 121 can, for example, be contacted from the rear side of sensor 10. Each detection element 105 i It can be individually controlled via p-type contact element 114 and n-type contact element 121 respectively. Detector element 105 i They can each have the same structure.

[0048] Of course, each detection element 105 i The given construction should be understood as an example only, and the probe element 105 i It can be implemented in any other way.

[0049] For example, detector element 105 i It can be formed in a second compound semiconductor material, wherein at least one component element of the second compound semiconductor material is a component of the first compound semiconductor material 135. Correspondingly, semiconductor layers 115, 116, and 120 may, for example, have the second compound semiconductor material.

[0050] However, according to other embodiments, the detection element 105 i It can also be constructed from a semiconductor material different from the first compound semiconductor material 135. Detector element 105 i For example, it can be formed in silicon. Correspondingly, semiconductor layers 115, 116, and 120 can also contain silicon or be made of silicon.

[0051] Typically, the detection element 105 i The second compound semiconductor material or semiconductor material can be selected such that the filter element 109 can be detected. i Electromagnetic radiation that selectively passes through. The detection limit can be determined by this selection.

[0052] As in Figure 1A As illustrated in the diagram, filter element 109 i 109 i+1 At least two filter elements in the filter have different layer thicknesses along a vertical direction, such as the z-direction. Filter element 109 i For example, there can be a region 111 with a constant component ratio and a region 112 with a varying component ratio.

[0053] Due to the changing component ratio, the band gap is thus affected by the corresponding filter element 109. i The transmitted electromagnetic radiation also changes. In particular, the band gap of the first compound semiconductor material 135 decreases as the distance from the surface of the corresponding detection element increases. For example, the component ratio changes monotonically, that is, the concentration of the component increases or decreases monotonically along the vertical direction. As a result, the band gap of the first compound semiconductor material decreases monotonically as the distance from the surface of the corresponding detection element increases.

[0054] Reference Figure 1A The result is that, with filter element 109 n In contrast, filter element 1091 absorbs a relatively small wavelength range. A relatively large wavelength range or energy range is transmitted and detected by detector element 1051. Conversely, filter element 109... n It absorbs a relatively large wavelength range. Correspondingly, only a small wavelength range or energy range is transmitted and detected by the detection element 105. n Detection. Regarding the wide wavelength range transmitted by filter element 1091, the filter element 109... n The range of wavelengths that can be transmitted is the range of higher wavelengths with lower energy.

[0055] This will refer to Figure 1D A detailed explanation is provided.

[0056] Figure 1BA top view of the sensor 10 is shown. As can be seen, the various filter elements 109... i They can be arranged in rows and columns. Here, for example, within a column, the thickness of the first compound semiconductor layer 135 can be the same, and can increase or decrease along the row direction.

[0057] Figure 1C A view of the sensor's lower side is shown. As can be seen, multiple p-type contact elements 114 and n-type contact elements 121 are arranged in rows and columns. By contacting and manipulating the corresponding p-type contact elements 114 and n-type contact elements 121, each sensing element 100 can be selectively affected. i .

[0058] As in Figure 1A As shown, the thickness of the first compound semiconductor layer 135 varies between filter elements 1091. Examples of suitable compound semiconductor materials include Al. x Ga 1-x As. For example, x can be varied in the range of 0.4 to 0.05. For example, x can be decreased in the vertical direction, resulting in a higher Al content in the region near the surface of the probe element compared to the region at a greater distance from the surface of the probe element. Al x Ga 1-x As has a lattice constant that is largely independent of the composition ratio. Correspondingly, Al with different composition ratios... x Ga 1-x As can be formed largely without stress. According to an embodiment, the second compound semiconductor material may comprise GaAs. Correspondingly, the detection element 105 i It can detect electromagnetic radiation with energy greater than 1.4 eV.

[0059] Because as in Figure 1A As shown, the detection element 109 n Covering a large bandgap range, electromagnetic radiation with energy greater than the maximum bandgap of the first compound semiconductor material 135 passes through the filter element 109. n It was passed through, and subsequently detected by the detection element 105. n Detection. Conversely, a large wavelength range is transmitted through the filter element 1091 and detected by the detection element 1051. Wavelength ranges in between are detected by the filter element 1091 located therebetween. i Through and through the detection element 105 i Detection.

[0060] Figure 1D The following are shown in the various detection elements 1051, 1052, and 105 i 105i+1 ... 105 n-1 105 n An example of the measured intensity of electromagnetic radiation at a location. An example of the intensity distribution to be resolved is shown in the upper right illustration, along with the absorption coefficients for different component ratios of the first compound semiconductor material.

[0061] For example, the minimum intensity detected at detector element i corresponds to the minimum intensity of the radiation to be detected. (As in...) Figure 1D As can be seen, for example by directly comparing adjacent detector elements 105 i+1 105 i The intensity signal is used to derive the intensity in region i. More precisely, the intensity contribution of the spectrum in the corresponding range can be inferred by comparing the intensity in adjacent detector elements. Through pixel-level etching, it is possible to determine which energy is filtered out or absorbed by the pixel layer and does not reach its corresponding detector element 105. i superior.

[0062] The filter material can be any compound semiconductor material, and the band gap of the compound semiconductor material can be changed by varying the component ratio. Other examples of suitable material systems include In... x AlyGa 100-x-y N、In x Ga 100- x As y P 100-y or In x GA 100-x As y SB 100-y For example, a material system can be selected in which the lattice constant changes only slightly with the composition ratio.

[0063] Figure 2A A cross-sectional view of a sensor 10 according to another embodiment is shown. The sensor 10 has a [missing information - likely related to a specific embodiment]. Figure 1A The sensor shown in the figure has the same or similar components. Additionally, in each filter element 109 i A cover element or mask layer 128 is provided at the edge. The cover element 128 covers the side. The cover element 128 can also cover each filter element 109. i A portion of the surface in the edge region. The cover element 128 may, for example, be a material that is opaque to light or to incident electromagnetic radiation. Specific examples include, for example, any metal or also a polymer, such as silicone, which may contain suitable additives, such as carbon black particles, and optionally have a passivated, for example, insulating, intermediate layer. The cover element 128 can reduce the size of adjacent sensing elements 100.i Crosstalk between them.

[0064] Figure 2B A cross-sectional view of a sensor according to other embodiments is shown. (Except in...) Figure 1A or Figure 2A In addition to the components shown, in filter element 109 i A filter layer 131 is disposed on top. The filter layer 131 may, for example, have a bandpass filter that can filter out irrelevant spectral components. As a result, the signal-to-noise ratio can be improved. The filter layer may, for example, be implemented as a dielectric mirror or may have other semiconductor materials, for example, having a larger band gap, for example, greater than 3 eV. The filter layer 131 is applicable to all sensing elements 1001, 1002, ..., 100... n In other words, they can be the same.

[0065] In addition, filter element 109 can be used. i A passivation layer is disposed on top. The passivation layer 130 may, for example, be SiO2, SiN, or other materials transparent to incident electromagnetic radiation. The passivation layer can, for example, reduce oxidation stress. According to other embodiments, impurities, lattice vacancies, or lattice defects may be incorporated into the passivation layer or the first compound semiconductor material layer. For example, it may contain a concentration of 10... -8 Up to 10 -9 The quantity of lattice vacancies or defects is on the order of magnitude. According to other embodiments, a semiconductor material with an indirect bandgap, such as silicon, may also be incorporated. The impurities, lattice defects, or semiconductor material with an indirect bandgap facilitate the inclusion of these defects in the filter element 109. i Nonradiative recombination of charge carriers generated in the process. The passivation layer can, for example, have a thickness greater than 50 nm. The layer thickness can, for example, be less than about 3 µm. The layer thickness can, for example, be a few hundred nm.

[0066] According to one embodiment, the composition of the first compound semiconductor material 135 can be continuously varied. However, according to other embodiments, the composition can also be varied in a stepwise manner. Filter element 109 i Each filter element in the process can, for example, have multiple sub-layers 1331, ..., 133 n Each of the sublayers has a different component ratio. The component ratio can, for example, vary monotonically from sublayer to sublayer in the vertical direction; that is, the proportion of each component can only increase from sublayer to sublayer, and cannot decrease. In this design, the component ratio within the sublayer is constant. As a result, the lattice constant of, for example, the first compound semiconductor material can also be constant. Therefore, by appropriately selecting corresponding material regions, for example, four to five material regions, each region can be covered by a nearly constant lattice constant. Consequently, stress-free, and therefore arbitrary thickness layer growth is feasible.

[0067] As explained below, the different thicknesses of the first compound semiconductor layer 135 are achieved, for example, through etch-back. In this case, an etching method whose etching rate is strongly correlated with the material composition can be selected.

[0068] Figures 3A to 3C The illustration depicts a method for manufacturing a sensor according to an embodiment. Firstly, for example, the detection element 105 can be formed in a suitable material system. i . Figure 3A The fabricated detection element 105 is shown. i A cross-sectional view. Then, a first compound semiconductor material layer 135 having a component ratio varying in the vertical direction is applied. See reference... Figure 2C As described, the composition of the first compound semiconductor layer 135 can be changed continuously or gradually.

[0069] The component ratio changes, causing the band gap to vary with the detection element 105. i The interfacial spacing decreases as the composition of the semiconductor material increases. For example, the first compound semiconductor material can be selected such that the lattice constant remains constant as the composition ratio changes. Figure 3B An example of the resulting workpiece is shown.

[0070] An etching method is then performed, in which different regions of the first compound semiconductor material layer 135 are etched to different depths. For example, it can be concluded that... Figure 3C The stepped profile is shown in the figure. Subsequently, for example, the individual filter elements 109 can be... i By etching them apart, thus obtaining... Figure 1A or Figure 2A The structure shown in the figure.

[0071] As in Figure 4A As shown in the figure, according to other embodiments, each filter element 109 i It can also be formed on a separate carrier 137. For example, this can be done by forming a first compound semiconductor layer 135 over the carrier 137 and then etching it back. Then, as in... Figure 4A As also shown, it can be equipped with filter element 109 i Carrier 137 and detector element 105 i The device is connected.

[0072] The result is that it can be concluded that... Figure 4B The device shown in the figure. When for filter element 109 i and detection element 105 i This approach can be advantageous, for example, when using different material systems.

[0073] Figure 5A Examples of sensors 10 with different sensing regions 111, 112, and 113 are shown. Each sensing region contains a device with sensing elements, wherein each filter is based on a different material system. By cleverly combining different material systems, a large energy region, from <0.5 eV to >3 eV, can be covered, i.e., the near-infrared to near-ultraviolet region. (As shown in...) Figure 5A As also shown, the filter element can have different layer thicknesses in each sensing region 111, 112, 113. Figure 5A The diagram also illustrates the operation of the corresponding detection element 105. i And the control logic 139 used for reading.

[0074] The special construction of each filtering element allows for tuning of the sensor's absorption characteristics over a wide range. In particular, the absorption or detection edge can be continuously tuned as the component ratio within the first compound semiconductor layer changes continuously. This results in a wide variability that is compatible with the detection wavelength ranges to be separated. Compared to conventional sensors, the sensor's construction allows for more efficient utilization of the collected light. Specifically, the portions of the spectrum that should not be detected by their respective detection regions are filtered out by the filtering regions. Comparison of the detected intensities allows for the inference of the spectral components. Correspondingly, higher-component incident electromagnetic radiation is delivered to the sensor and thus remains unfiltered.

[0075] Figure 5B A method for manufacturing a sensor is summarized, the sensor having a means of sensing elements, each sensing element having an individually readable detection element and a filter element disposed above its respective detection element. The method includes: (S100) constructing (a) a plurality of filter elements, each filter element comprising a first compound semiconductor material having a component ratio varying along a vertical direction; and (S110) removing (a) a portion of the first compound semiconductor material from at least one filter element, such that layer thicknesses of the first compound semiconductor material are different from each other above at least two detection elements.

[0076] Figure 5C An electronic device 15 is shown, which includes the sensor 10 as described above. The electronic device 15 may be selected, for example, from an exploration satellite suitable for surface surveying (Earth, vegetation, water bodies, etc.), exploring natural resources, and making weather forecasts. Other examples of the electronic device 15 include analytical devices, such as those used for biomedical applications, such as examining (skin) burns, documents, artwork, or for plant growth control in horticulture, or commonly used in the military field.

[0077] Figure 5DA method for operating a sensor as described above is summarized. The method includes: reading (S200) detection signals from at least two sensing elements, each of which has a different layer thickness of a filter element; and obtaining (S210) a spectral signal from the difference between the detection signals.

[0078] Although specific embodiments are illustrated and described herein, those skilled in the art will recognize that the illustrated and described embodiments can be replaced by numerous alternative and / or equivalent design solutions without departing from the scope of protection of this invention. This application is intended to cover all adjustments or variations of the specific embodiments discussed herein. Therefore, this invention is limited only by the claims and their equivalents.

[0079] List of reference numerals

[0080] 10 sensors

[0081] Sensing areas 111, 112, and 113

[0082] 15 electronic devices

[0083] 1001, 1002, ..., 100 i , ..., 100 n Sensing element

[0084] 1051, 1052, ..., 105 i , ..., 105 n Detection element

[0085] 1091, 1092, ..., 109 i , ..., 109 n Filtering components

[0086] 111 Regions with constant component ratios

[0087] 112 Regions with varying component ratios

[0088] 114p type contact element

[0089] 115p type semiconductor layer

[0090] 116i type semiconductor layer

[0091] 120n type semiconductor layer

[0092] 121n type contact element

[0093] 123 First Intermediate Layer

[0094] 125 Second Intermediate Layer

[0095] 128 Covering Components

[0096] 130 passivation layer

[0097] 131 filter layers

[0098] 1331, 1332, ..., 133 i , ..., 133 n sub-layer

[0099] 135 First Compound Semiconductor Material

[0100] 137 carrier

[0101] 139 Control Logic

[0102] 140 Evaluation Interface

Claims

1. A sensor (10), said sensor comprising sensing elements (1001, 1002, ..., 100...). n ) device, The sensing elements each have individually readable detection elements (1051, 1052, ..., 105...). n ) and filter elements (1091, 1092, ..., 109) disposed above the detection element. n ), wherein the filter elements (1091, 1092, ..., 109) n The first compound semiconductor material (135) comprises a first compound semiconductor material having a component ratio that varies along a vertical direction, wherein the first compound semiconductor material (135) is a group III-V semiconductor material, the group III-V semiconductor material comprises a group III element and at least one group V element, and the proportion of the group III element varies along the vertical direction, and the proportion of the at least one group V element remains greater than zero. At least two filter elements (1091, 1092, ..., 109) n The first compound semiconductor material (135) has a layer thickness that is different from each other.

2. The sensor (10) according to claim 1, further comprising a covering element (128) disposed between two adjacent filter elements (1091, 1092, ..., 109...). n )between.

3. The sensor (10) according to claim 2, wherein the covering element (128) covers the filtering elements (1091, 1092, ..., 109...). n (a part of the surface of) 4. The sensor (10) according to any one of the preceding claims, the sensor further having a filter layer (131) above the filter elements (1091, 1092, ..., 109n).

5. The sensor (10) according to any one of the preceding claims, wherein the proportion of the components varies continuously.

6. The sensor (10) according to any one of claims 1 to 4, wherein the proportions of the components vary in a stepwise manner.

7. The sensor (10) according to any one of the preceding claims, wherein the detection elements (1051, 1052, ..., 105...) n The second compound semiconductor material is formed in the second compound semiconductor material, and at least one component element of the second compound semiconductor material is a component of the first compound semiconductor material (135).

8. The sensor (10) according to any one of claims 1 to 6, wherein the detection elements (1051, 1052, ..., 105...) n It is formed in a semiconductor material that is different from the first compound semiconductor material (135).

9. The sensor (10) according to any one of the preceding claims, wherein at least two detection elements (1051, 1052, ..., 105...) are present. n () are the same.

10. The sensor (10) according to any one of the preceding claims, wherein the band gap of the first compound semiconductor material (135) varies with the band gap of the associated detection element (1051, 1052, ..., 105). n The distance between the surfaces of the surface increases and decreases.

11. The sensor (10) according to any one of the preceding claims, wherein the first compound semiconductor material layer additionally comprises impurities, lattice vacancies, lattice defects or semiconductor material having an indirect bandgap.

12. The sensor (10) according to any one of the preceding claims, the sensor further comprising a transparent, insulating passivation layer above the first compound semiconductor layer, wherein the passivation layer comprises impurities, lattice vacancies, lattice defects or a semiconductor material having an indirect bandgap.

13. A method for manufacturing a sensor (10), said sensor having sensing elements (1001, 1002, ..., 100...). n The device comprises sensing elements, each having individually readable detection elements (1051, 1052, ..., 105...). n ) and the detection elements (1051, 1052, ..., 105) set therein. n The filter elements above (1091, 1092, ..., 109) n The method includes: Multiple filter elements (1091, 1092, ..., 109) constitute (S100) n The filter elements respectively include a first compound semiconductor material (135), the first compound semiconductor material having a component ratio that varies along the vertical direction, wherein the first compound semiconductor material (135) is a III-V group semiconductor material, the III-V group semiconductor material includes a group III element and at least one group V element, and the proportion of the group III element varies along the vertical direction, and the proportion of the at least one group V element remains greater than zero; Remove (S110) at least one filter element (1091, 1092, ..., 109) n Part of the first compound semiconductor material (135), This ensures that at least two detection elements (1051, 1052, ..., 105) are used. n The thickness of the first compound semiconductor material (135) above each other is different.

14. The method of claim 13, wherein the plurality of filter elements (1091, 1092, ..., 109...) n The configuration includes the sensing elements (1001, 1002, ..., 100) n The first compound semiconductor material (135) is applied above the device, and the sensing elements (1001, 1002, ..., 100) are subjected to the first compound semiconductor material (135) ... n After the first compound semiconductor material (135) is applied over the device, a portion of the first compound semiconductor material (135) is removed.

15. The method of claim 13, wherein after removing a portion of the first compound semiconductor material (135), the detector elements (1051, 1052, ..., 105...) are... n The filter element (1091, 1092, ..., 109) is applied above it. n ).

16. An electronic device (15) comprising a sensor (10) according to any one of claims 1 to 12.

17. The electronic device of claim 16, wherein the electronic device is selected from exploration satellites or analysis equipment.

18. A method for operating a sensor according to any one of claims 1 to 12, the method comprising: Read (S200) at least two sensing elements (1001, 1002, ..., 100) n The detection signal of the sensing element is provided by the sensing element, which has different filtering elements (1091, 1092, ..., 109). n The layer thickness; and (S210) The spectral signal is obtained from the difference of the detected signals.

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