Composition and application thereof

Abstract

The invention relates to a composition and application thereof. The composition can be used as a light-emitting layer material in the light-emitting device, so that the light-emitting device with relatively high energy transfer efficiency and relatively high light-emitting efficiency is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of light-emitting devices, in particular to a composition and application thereof. BACKGROUND

[0002] In a phosphorescent organic electroluminescent device (PhOLED), the light-emitting layer is usually composed of a wide-gap host material and a guest material with excellent light-emitting performance. The light-emitting mechanism of PhOLED mainly includes two types: one is that the host material transfers energy to the guest material to emit light, which is usually composed of Förster energy transfer and Dexter energy transfer; the other is that the guest material directly captures carriers (holes, electrons) from the transport layer and excites light emission. The relationship between the triplet energy of the host material and the triplet energy of the phosphorescent guest material plays an important role in the quenching effect. When the triplet energy of the phosphorescent guest material is greater than that of the host material, the quenching constant is larger; when the triplet energy of the phosphorescent guest material is less than that of the host material, the quenching constant is smaller. In addition, the energy transfer and triplet exciton confinement of the host material will also significantly affect the device properties.

[0003] The energy transfer efficiency and light-emitting efficiency of the conventional phosphorescent organic electroluminescent device are low. SUMMARY

[0004] Therefore, it is necessary to provide a composition and application thereof. The composition of the present application can be used as a light-emitting layer material in a light-emitting device to realize a light-emitting device with high energy transfer efficiency and high light-emitting efficiency.

[0005] In a first aspect, the present application provides a composition, comprising a host material and a phosphorescent material;

[0006] The host material comprises one or more of the following general compounds:

[0007] 、 ;

[0008] wherein R3, R4 and R7 are each independently selected from one or more of substituted or unsubstituted C 6-60 aryl, substituted or unsubstituted heteroaryl with 5-60 ring atoms, substituted or unsubstituted arylamino with 6-60 ring atoms, substituted or unsubstituted aryloxy with 6-60 ring atoms, substituted or unsubstituted arylmercapto with 6-60 ring atoms, substituted or unsubstituted heteroarylamino with 5-60 ring atoms, substituted or unsubstituted heteroaryloxy with 5-60 ring atoms, and substituted or unsubstituted heteroarylmercapto with 5-60 ring atoms;

[0009] R3, R4 and R7 are each independently selected from the group consisting of D, halogen, cyano, amino, nitro, thiol, carbonyl, C1-C20 alkyl, C1-C20 alkoxy, C5-C20 heteroaryl and C6-C20 aryl, or a combination of one or more of the above; 1-20 C1-C20 alkyl, C1-C20 alkoxy, C5-C20 heteroaryl and C6-C20 aryl; 1-20 C1-C20 alkyl, C1-C20 alkoxy, C5-C20 heteroaryl and C6-C20 aryl; 1-20 C1-C20 alkyl, C1-C20 alkoxy, C5-C20 heteroaryl and C6-C20 aryl; 6-30 C1-C20 alkyl, C1-C20 alkoxy, C5-C20 heteroaryl and C6-C20 aryl;

[0010] the heteroatom in the heteroaryl, the heteroaryloxy, the heteroaryl amino and the heteroaryl thiol is independently selected from one or more of O, P, N and S;

[0011] R1, R2, R5 and R6 are each independently selected from the group consisting of H, D, halogen, cyano, amino, nitro, C1-C20 alkyl, C1-C20 alkoxy, C5-C20 heteroaryl and C6-C20 aryl, or a combination of one or more of the above; 1-20 C1-C20 alkyl, C1-C20 alkoxy, C5-C20 heteroaryl and C6-C20 aryl; 1-20 C1-C20 alkyl, C1-C20 alkoxy, C5-C20 heteroaryl and C6-C20 aryl; 6-20 C1-C20 alkyl, C1-C20 alkoxy, C5-C20 heteroaryl and C6-C20 aryl;

[0012] The phosphorescent material comprises at least one of Ir complex, Pt complex, Os complex and Re complex.

[0013] In some embodiments, the phosphorescent material comprises at least one of tris(2-phenylpyridine-C2,N) iridium(III), octaethylporphyrin platinum, bis(4,6-difluorophenylpyridine-C2,N) picolinato iridium and tris[2-(p-tolyl)pyridine-C2,N) iridium(III).

[0014] In some embodiments, the phosphorescent material accounts for 5% to 20% of the mass percentage of the host material.

[0015] In a second aspect, the application provides the use of the composition of any one of the above in a light-emitting device.

[0016] In a third aspect, the application provides a light-emitting device comprising a first electrode layer, a light-emitting layer and a second electrode layer arranged in sequence, wherein the material of the light-emitting layer comprises the composition of any one of the above.

[0017] The composition described above can be used as a light-emitting layer material in a light-emitting device to achieve a light-emitting device with high energy transfer efficiency and high light-emitting efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 Structure schematic diagram of a light-emitting device provided by an embodiment of the application;

[0019] Figure 2 External quantum efficiency-current density curves of the light-emitting devices in the embodiments and comparative examples of the application.

[0020] Reference Signs List

[0021] 10, first electrode layer; 20, hole injection layer; 30, hole transport layer; 40, light emitting layer; 50, electron transport layer; 60, electron injection layer; 70, second electrode layer. DETAILED DESCRIPTION

[0022] In order to make the above objectives, features and advantages of the present application more clear and easily understood, the specific embodiments of the present application will be described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to one skilled in the art that the present application can be practiced without the specific details given herein, and that the present application can be practiced with other than the specific embodiments described herein. Therefore, the present application is not limited to the specific embodiments disclosed below, but only by the claims.

[0023] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this description, the terms "and / or" includes any and all combinations of one or more of the associated listed items.

[0024] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0025] In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise specifically limited.

[0026] In the present application, "substituted or unsubstituted" means that the defined group can be substituted or unsubstituted. It is understood that when the group is substituted, the number of substituents can be one, two, three or more, and when the number of substituents is two or more, each substituent can be the same or different.

[0027] In the present application, "the number of ring atoms" means the number of atoms constituting a ring itself in a structural compound (for example, a monocyclic compound or a polycyclic compound) obtained by bonding atoms into a ring, that is, the number of atoms forming a ring. When the ring is substituted with a substituent, the atoms included in the substituent are not included in the ring atoms. The same applies to "the number of ring atoms" described below, unless otherwise specified. For example, the number of ring atoms of a benzene ring is 6, the number of ring atoms of a naphthalene ring is 10, and the number of ring atoms of a thiophene group is 5.

[0028] In the present application, "aryl group or aromatic group" means an aromatic hydrocarbon group derived by removing one hydrogen atom from an aromatic ring compound, and can be a monocyclic aryl group, or a fused ring aryl group, or a polycyclic aryl group, and at least one of the rings is an aromatic ring system. For example, "substituted or unsubstituted aryl group having 6 to 40 ring atoms" means an aryl group having 6 to 40 ring atoms, and the aryl group can be further optionally substituted. Preferably, substituted or unsubstituted aryl group having 6 to 30 ring atoms, more preferably substituted or unsubstituted aryl group having 6 to 18 ring atoms, particularly preferably substituted or unsubstituted aryl group having 6 to 14 ring atoms, and the aryl group is optionally further substituted; suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthryl, phenanthryl, fluoranthenyl, pyrenyl, perylenyl, tetracenyl, fluorenyl, rylene, and derivatives thereof. It is understood that a plurality of aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms such as C, N, or O atoms), specifically such as acenaphthene, fluorene, or 9,9-dialkylfluorene, triarylamine, diaryl ether systems should also be included in the definition of aryl group.

[0029] In the present application, "heteroaryl or heteroaromatic group" means that at least one carbon atom of an aryl group is replaced by a non-carbon atom, which can be an N atom, an O atom, an S atom, a Si atom, a P atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms" means a heteroaryl group having 5 to 60 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 5 to 18 ring atoms, particularly preferably a substituted or unsubstituted heteroaryl group having 5 to 14 ring atoms, and the heteroaryl group is optionally further substituted; suitable examples include, but are not limited to, thienyl, furanyl, pyrrolyl, dioxazolyl, triazolyl, imidazolyl, pyridyl, bipyridyl, pyrimidyl, triazinyl, acridinyl, pyridazinyl, pyrazinyl, quinolyl, isoquinolyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidyl, pyridopyrazinyl, benzothienyl, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienothienyl, furanopyrrolyl, furanofuranyl, thienofuranyl, benzisoxazolyl, benzisothiazolyl, benzimidazolyl, perylenyl, phenanthridinyl, berberinyl, quinazolinonyl, dibenzothienyl, dibenzofuranyl, carbazolyl, and derivatives thereof.

[0030] In the present application, "alkyl" can mean straight chain, branched chain, and / or cyclic alkyl. The number of carbons of the alkyl group can be 1 to 30, 1 to 25, 1 to 20, 1 to 15, 1 to 10, or 1 to 6. The phrase including this term, for example, "C1-C6 alkyl" means an alkyl group having 1 to 6 carbons. 1-9"Alkyl" refers to an alkyl group containing from 1 to 9 carbon atoms, which can be Ci alkyl, C2alkyl, C3alkyl, C4alkyl, C5alkyl, C6alkyl, C7alkyl, C8alkyl, or C9alkyl, each occurrence of which is independent of the other and is optionally substituted as defined herein. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, i-propyl, n-butyl, s-butyl, t-butyl, i-butyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, i-pentyl, neopentyl, t-pentyl, cyclopentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, cyclohexyl, 4-methylcyclohexyl, 4-t-butylcyclohexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, t-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, cyclooctyl, n-nonyl, n-decyl, adamantyl, 2-ethyidecyl, 2-butyidecyl, 2-hexyidecyl, 2-octyidecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, 2-ethyihexadecyl, 2-butyihexadecyl, 2-hexyihexadecyl, 2-octyihexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, 2-ethyieicosyl, 2-butyieicosyl, 2-hexyieicosyl, 2-octyieicosyl, n- heneicosyl, n-docosyl, n-tricosyl, n-tetracosyl, n-pentacosyl, n-hexacosyl, n-heptacosyl, n-octacosyl, n-nonacosyl, n-triacontyl, and the like.

[0031] In the present application, "alkoxy" refers to a group of the structure "-O-alkyl", i.e., an alkyl group as defined above attached via an oxygen atom to the remainder of the molecule. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3or -OMe), ethoxy (-O-CH2CH3or -OEt), t-butoxy (-O-C(CH3)3or -OTBu), n-hexyloxy (-O-C6H 13 ), n-decyloxy (-O-C 10 H 21 ), n-dodecyloxy (-O-C 12 H 25 ).

[0032] In this application, "aryloxy" refers to a group with the structure "-O-aryl", that is, an aryl group as defined above is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to, phenoxy, naphthoxy, etc. "Heteroaryloxy" refers to a group with the structure "-O-heteroaryl", that is, a heteroaryl group as defined above is attached to other groups via an oxygen atom. "Alkoxyaryl" refers to a group with the structure "-aryl-alkoxy", that is, an alkoxy group as defined above is attached to other groups via an aryl group; for example, hexyloxyphenyl represents -ph-OC6H. 13 , where ph refers to phenyl.

[0033] In this application, "alkylthiol" refers to a group with the structure "-S-alkyl", that is, an alkyl group as defined above that is attached to other groups via a sulfur atom. Suitable examples of phrases containing this term include, but are not limited to: methylthio (-S-CH3 or -SMe), ethylthio (-S-CH2CH3 or -SEt), tert-butylthio (-SC(CH3)3 or -StBu), and n-hexanethio (-S-C6H). 13 ), n-Decadecylthio (-SC) 10 H 21 ), n-Dodecylthio (-SC) 12 H 25 Similarly, "aryl thiol" refers to a group with the structure "-S-aryl", and "heteroaryl thiol" refers to a group with the structure "-S-heteroaryl".

[0034] In this application, amino is represented as -NR1R2, where R1 and R2 each independently represent H or alkyl. That is, amino can refer to -NH2, -NH (alkyl), or -N alkyl (alkyl).

[0035] In this application, "arylamino" refers to a group with the structure "-NR-aryl" or "-N-aryl (aryl)", that is, an aryl group as defined above is attached to other groups via an N atom, for example... "Heteroarylene amino" refers to a group with the structure "-NR-heteroaryl" or "-N-heteroaryl (heteroaryl)", that is, a heteroaryl group as defined above is attached to other groups via an N atom.

[0036] In this application, "connected to a single key" The '' indicates a linking site or fusion site. If no linking site is specified in the group, it means that any possible linking site in the group can be used as the linking site. For example, In this context, any connectable site on the two benzene rings and any connectable site on Z can serve as a connection site with the main skeleton structure; it can be understood that when Z is a connectable site, Z is N.

[0037] In this application, the single bonds connecting the substituents extend through the corresponding ring, indicating that the substituent can be connected to any position on the ring. For example... Chinese R 13 It can be attached to any substituted site in the benzene ring.

[0038] The terms “combinations thereof,” “any combination thereof,” and “any combination thereof” as used in this application include all suitable combinations of any two or more of the listed items.

[0039] In this application, "halogen" represents -Cl, -Br, -F, or -I; carboxyl group represents -COOH; nitro group represents -NO2; sulfonic acid group represents -SO3H; cyano group represents... .

[0040] In this application, "alkyl carbonyl" refers to the structure " "" refers to the group "" and "alkoxycarbonyl" refers to the structure "". The group is "". Where R represents alkyl, C 1-30 C1~C in alkyl carbonyl 30 The number of carbon atoms in the entire group.

[0041] One embodiment of this application provides a composition comprising a host material and a phosphorescent material;

[0042] The main material includes one or more compounds having the following general formula:

[0043] , ;

[0044] Among them, R3, R4, and R7 are each independently selected from substituted or unsubstituted C. 6-60 One or more of the following: aryl, heteroaryl with 5 to 60 substituted or unsubstituted ring atoms, arylamino with 6 to 60 substituted or unsubstituted ring atoms, aryloxy with 6 to 60 substituted or unsubstituted ring atoms, arylthiol with 6 to 60 substituted or unsubstituted ring atoms, heteroarylamino with 5 to 60 substituted or unsubstituted ring atoms, heteroaryloxy with 5 to 60 substituted or unsubstituted ring atoms, and heteroarylthiol with 5 to 60 substituted or unsubstituted ring atoms;

[0045] The substituents in R3, R4, and R7, each time appearing, are independently selected from D, halogen, cyano, amino, nitro, mercapto, carbonyl, and C. 1-20 Alkyl, C 1-20 alkenyl, C 1-20 Alkoxy groups, heteroaryl groups with 5-30 ring atoms, and C 6-30 A combination of one or more aryl groups;

[0046] the heteroatoms in the heteroaryl, heteroaryloxy, heteroaryl amino, and heteroarylthio groups are each independently selected from O, P, N, S;

[0047] R1, R2, R5, and R6 are each independently selected from H, D, halogen, cyano, amino, nitro, C 1-20 alkyl, C 1-20 alkoxy, heteroaryl having 5 to 20 ring atoms, and C 6-20 aryl groups;

[0048] The phosphorescent material includes at least one of an Ir complex, a Pt complex, an Os complex, and a Re complex.

[0049] In the composition of the present application, the host material can convert high-energy triplet excitons into luminescent singlet excitons through a rapid reverse intersystem crossing (RISC) process, and compared with traditional red light thermally activated delayed fluorescence (TADF) materials and triplet-triplet annihilation (TTA) materials, the above-mentioned host material can not only overcome the problem of serious efficiency roll-off of the light-emitting device under high current density, but also can break through the limitation of exciton utilization. The above-mentioned composition can effectively transfer energy from the high-energy triplet state of the host material to the phosphorescent material through the Förster energy transfer mode, so as to optimize the energy transfer process and improve the utilization rate of triplet excitons. The above-mentioned composition can be used as a light-emitting layer material in a light-emitting device, and a light-emitting device with high energy transfer efficiency and high light-emitting efficiency can be realized.

[0050] In some embodiments, the host material includes one or more of the following compounds having the general formula:

[0051] , ;

[0052] R8 is selected from H, D, halogen, cyano, amino, nitro, C 1-14 alkyl, C 1-14 alkoxy, heteroaryl having 5 to 14 ring atoms, and C 6-14 aryl groups;

[0053] R9 and R 11 are each independently selected from C 6-30 aryl;

[0054] R 10 and R 12 are each independently selected from one of the following structures:

[0055] ;

[0056] wherein the attachment site is ;

[0057] Z is -N, -CR 26 , -NR 27 , O or S;

[0058] X is -N, -NR 28 , -CR 29 , CR 30 R 31 , S or O;

[0059] R 13 ~R 25 each independently is selected from one or more of H, D, halogen, cyano, amino, nitro, substituted or unsubstituted C 1-30 alkyl, substituted or unsubstituted C 1-30 alkoxy, substituted or unsubstituted C 1-30 alkylthiol, substituted or unsubstituted C 1-30 alkylamino, substituted or unsubstituted aryl having a number of ring atoms of C 26 ;

[0060] R 27 , R 28 , R 29 , R 30 , R 31 each independently is selected from one or more of H, D, substituted or unsubstituted C 1-30 alkyl, substituted or unsubstituted C 1-30 alkoxy, substituted or unsubstituted C 1-30 alkylthiol, substituted or unsubstituted C 1-30 alkylamino, substituted or unsubstituted aryl having a number of ring atoms of C 1-30 ;

[0061] R 13 ~R 31 substituted with a substituent selected from one or more of D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, thiol, cyano, carbonyl, C 1-20 alkyl, C 1-20 alkenyl, C 1-20 alkoxy, heteroaryl having a number of ring atoms of C 6-20 ;

[0062] In some embodiments, R 10 and R 12 each independently is selected from one of the following groups:

[0063] ;

[0064] wherein R 32 R 51 each independently is selected from one or more of H, D, halogen, cyano, amino, nitro, C 1-20 alkyl, C 1-20 alkoxy, heteroaryl having 5 to 20 ring atoms, and C 6-20 aryl.

[0065] In some embodiments, R9and R 11 each independently is selected from one of the following groups:

[0066] .

[0067] In some embodiments, R9and R 11 each independently is selected from one of the following groups:

[0068] ;

[0069] In some embodiments, R 10 and R 12 each independently is selected from one of the following groups:

[0070] .

[0071] In some embodiments, the host material comprises at least one of the following materials:

[0072] (PABPP) (PATPA) (mPAC) (PAC) (TPA-PPI) (ppCTPI) (TPINCz) (DPACPhTPI) (BITPI) (CPBPMCN) (TBPMCN) (TPMCz) (2FPPITPA) (CPPCN).

[0073] In some embodiments, the phosphorescent material includes at least one of tris(2-phenylpyridine-C2,N) iridium(III) (Ir(ppy)3), octaethylporphyrin platinum (PtOEP), bis(4,6-difluorophenylpyridine-C2,N) picolinato iridium (FIrPic), and tris[2-(p-tolyl)pyridine-C2,N) iridium(III) (Ir(mppy)3).

[0074] In some embodiments, the phosphorescent material accounts for 5% to 20% of the host material by mass percentage. Within the range of the mass percentage of the phosphorescent material in the host material, a better energy transfer efficiency can be achieved. When the mass percentage of the phosphorescent material is too low or too high, the energy transfer efficiency and the light-emitting efficiency are both reduced. Alternatively, the mass percentage of the phosphorescent material in the host material is 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, or 20%. Alternatively, the mass percentage of the phosphorescent material in the host material can also be within a range between any two percentages mentioned above.

[0075] Yet another embodiment of the present application provides an application of any of the above-mentioned compositions in a light-emitting device.

[0076] Referring to Figure 1 Yet another embodiment of the present application provides a light-emitting device, which includes a first electrode layer 10, a light-emitting layer 40, and a second electrode layer 70 arranged in sequence, and the material of the light-emitting layer 40 includes any of the above-mentioned compositions.

[0077] In some embodiments, the light-emitting device further includes a hole functional layer and an electron functional layer, the hole functional layer is located between the first electrode layer 10 and the light-emitting layer 40, and the electron functional layer is located between the light-emitting layer 40 and the second electrode layer 70.

[0078] In some embodiments, the hole functional layer includes a hole transport layer 30 and / or a hole injection layer 20 arranged in sequence, and when both the hole transport layer 30 and the hole injection layer 20 are included, the hole transport layer 30 is arranged closer to the light-emitting layer 40 than the hole injection layer 20.

[0079] In some embodiments, the material of the hole transport layer 30 is selected from one or more of 4,4',4"-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine, poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec- butylphenyl)diphenylamine)], poly(9-vinylcarbazole), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec- butylphenyl)diphenylamine)], 4,4'-Bis(9H-carbazol-9-yl)-2,2'-dimethylbiphenyl, 3,3'-Di(9H-carbazol-9-yl)-1,1'-biphenyl, 4,4'-Bis(9-carbazol) biphenyl, 1,3-Di-9-carbazolylbenzene, 4,4',4"-Tris(carbazol-9-yl)triphenylamine, 4,4'-Cyclohexylbis[N,N-bis(4-methylphenyl)benzenamine], N,N'-Diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, Poly[bis(4-phenyl)(4-butylphenyl)amine], and N,N'-Diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine TPD.

[0080] In some embodiments, the material of the hole injection layer 20 is selected from one or more of poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)-diphenylamine), polyarylamine, poly(N-vinylcarbazole), polyaniline polypyrrole, N,N,N',N'-Tetrakis(4-methoxyphenyl)-phenylenediamine, 4-Bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl, 4,4',4"-Tris[phenyl(m-methylphenyl)amino]triphenylamine, 4,4',4"-Tris(N-carbazolyl)-triphenylamine, 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane, 4,4',4"-Tris(diphenylamino)triphenylamine doped with tetrakis- tetra cyano-quinonedimethane, p-doped phthalocyanine, F4-TCNQ doped N,N'-Diphenyl-N,N'-di(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, Hexaazatriphenylene-hexacarbonitrile, Poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-Tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-Hexacyano-1,4,5,8,9,12-hexaazatriphenylene, Copper phthalocyanine, transition metal oxide selected from one or more of NiO, MoO2, MoO3, WO3, and CuO, and transition metal chalcogenide selected from one or more of MoS2, MoSe2, WS3, WSe3, and CuS.

[0081] In some embodiments, the electron functional layer comprises an electron transport layer 50 and / or an electron injection layer 60 arranged in a stack, and when both the electron transport layer 50 and the electron injection layer 60 are included, the electron transport layer 50 is arranged closer to the light emitting layer 40 than the electron injection layer 60.

[0082] In some embodiments, the material of the electron transport layer 50 is selected from one or more of aluminum 8-hydroxyquinoline, diphenyl[4-(triphenylsilyl)phenyl] phosphine oxide, 1,3,5-tris(3-pyridyl-3-phenyl)benzene, 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole, beryllium octa-hydroxyquinoline, 1,2,4-triazole derivatives, 2,7-bis(diphenylphosphoryl)-9,9'-spirobifluorene, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,6-bis(3,5-di(3-pyridyl)phenyl)-2-methylpyrimidine, and 4,7-diphenyl-1,10-phenanthroline.

[0083] In some embodiments, the material of the electron injection layer 60 comprises one or more of LiF, Liq, NaF, and CsF.

[0084] In some embodiments, the material of the first electrode layer 10 and the second electrode layer 70 is independently selected from one or more of a metal, a carbon material, and a metal oxide, the metal comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material comprises one or more of graphite, carbon nanotube, graphene, and carbon fiber; the metal oxide comprises a doped or undoped metal oxide comprising one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or a composite electrode comprising a doped or undoped transparent metal oxide sandwiched by a metal, the composite electrode comprising one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0085] In some embodiments, the light emitting device is a bottom-emitting OLED device comprising a substrate, a first electrode layer 10, a hole injection layer 20, a hole transport layer 30, a light emitting layer 40, an electron transport layer 50, an electron injection layer 60, and a second electrode layer 70 arranged in a stack, wherein the material of the light emitting layer 40 is any of the above-mentioned compositions.

[0086] In some embodiments, the light-emitting device is an inverted OLED device, comprising a substrate, a first electrode layer 10, an electron injection layer 60, an electron transport layer 50, a light-emitting layer 40, a hole transport layer 30, a hole injection layer 20 and a second electrode layer arranged in sequence, wherein the material of the light-emitting layer 40 is any of the above-mentioned compositions.

[0087] The light-emitting device of the present application has the following advantages:

[0088] 1. Good light-emitting performance: In the light-emitting layer of the light-emitting device, the energy transfer process of the light-emitting layer is optimized by the cooperation of the host material and the phosphorescent material, thereby improving the light-emitting performance of the light-emitting device.

[0089] 2. High utilization rate of excitons: The host material with high-energy-level triplet state can effectively transfer high-energy triplet excitons to the phosphorescent material, thereby improving the energy transfer efficiency.

[0090] 3. High stability under high brightness conditions: Compared with the traditional TADF material as the host, the host material in the present application can maintain the stability of the light-emitting device under high current density; compared with the traditional TTA material as the host, the host material in the present application can utilize triplet excitons to a greater extent.

[0091] 4. High charge transport balance: The light-emitting device of the present application can realize the requirements of charge transport balance, energy level matching, low injection barrier and wide scattering sub-combination area, which helps to improve the injection balance of carriers and the recombination process of excitons in the light-emitting layer.

[0092] Another embodiment of the present application provides a preparation method of a light-emitting device, comprising the following steps:

[0093] providing a substrate, the substrate comprising a substrate and a first electrode layer 10 arranged in sequence;

[0094] preparing a light-emitting layer 40 on the first electrode layer 10, the material of the light-emitting layer 40 comprising any of the above-mentioned compositions;

[0095] preparing a second electrode layer 70 on the light-emitting layer 40.

[0096] In some embodiments, the preparation method of the light-emitting device comprises the following steps:

[0097] providing a substrate, the substrate comprising a substrate and a first electrode layer 10 arranged in sequence;

[0098] preparing a hole injection layer 20, a hole transport layer 30 and a light-emitting layer 40 arranged in sequence on the first electrode layer 10;

[0099] preparing an electron transport layer 50, an electron injection layer 60 and a second electrode layer 70 arranged in sequence on the light-emitting layer 40.

[0100] In some embodiments, the method for preparing the light-emitting device comprises the following steps:

[0101] providing a substrate, the substrate comprising a base and a first electrode layer 10 arranged in a stack;

[0102] sequentially preparing an electron injection layer 60, an electron transport layer 50 and a light-emitting layer 40 arranged in a stack on the first electrode layer 10;

[0103] sequentially preparing a hole transport layer 30, a hole injection layer 20 and a second electrode layer 70 arranged in a stack on the light-emitting layer 40.

[0104] In another embodiment, the application provides a display device comprising any of the light-emitting devices or the light-emitting devices prepared by the method for preparing the light-emitting device.

[0105] The following are specific embodiments

[0106] Embodiment 1

[0107] Light-emitting device:

[0108] In this embodiment, the light-emitting device is a normal QLED device, comprising a first electrode layer 10, a hole injection layer 20, a hole transport layer 30, a light-emitting layer 40, an electron transport layer 50, an electron injection layer 60 and a second electrode layer 70 arranged in a stack, wherein the first electrode layer 10 is an ITO electrode, the material of the hole injection layer 20 is PEDOT:PSS, the material of the hole transport layer 30 is PVK, the host material in the light-emitting layer 40 is PAC, the phosphor material is Ir(ppy) 3, the material of the electron transport layer 50 is TmPyPB, the material of the electron injection layer 60 is Li, and the material of the second electrode layer 70 is Al.

[0109] Method for preparing the light-emitting device:

[0110] (1) providing a substrate, the surface of the substrate being provided with a first electrode layer 10 of ITO with a thickness of 50 nm;

[0111] (2) depositing PEDOT:PSS on the ITO as a hole injection layer 20 with a thickness of 30 nm by using a solution method;

[0112] (3) depositing PVK on the hole injection layer 20 as a hole transport layer 30 with a thickness of 30 nm by using a solution method;

[0113] (4) depositing the material of the light-emitting layer 40 on the hole transport layer 30 by using a solution method, wherein PAC is the host material, Ir(ppy) 3 is the phosphor material, the mass percentage of the phosphor material in the host material is 5%, and the thickness of the light-emitting layer 40 is 35 nm;

[0114] (5) Depositing TmPyPB as an electron transport layer 50 on the light-emitting layer 40 by an evaporation method, with a thickness of 30 nm;

[0115] (6) Depositing Li as an electron injection layer 60 on the electron transport layer 50 by an evaporation method, with a thickness of 1 nm;

[0116] (7) Depositing Al as a second electrode layer 70 on the electron injection layer 60 by an evaporation method, with a thickness of 100 nm.

[0117] Example 2

[0118] Example 2 has substantially the same device structure as Example 1, except that the phosphorescent material accounts for 10% of the host material in mass percentage when the device is prepared.

[0119] Example 3

[0120] Example 3 has substantially the same device structure as Example 1, except that the phosphorescent material accounts for 15% of the host material in mass percentage when the device is prepared.

[0121] Example 4

[0122] Example 4 has substantially the same device structure as Example 1, except that the phosphorescent material accounts for 20% of the host material in mass percentage when the device is prepared.

[0123] Example 5

[0124] Example 5 has substantially the same device structure as Example 1, except that the phosphorescent material in the light-emitting layer 40 is PtOEP, and the phosphorescent material accounts for 10% of the host material in mass percentage when the device is prepared.

[0125] Example 6

[0126] Example 6 has substantially the same device structure as Example 1, except that the host material in the light-emitting layer 40 is PABPP, and the phosphorescent material is PtOEP, and the phosphorescent material accounts for 10% of the host material in mass percentage when the device is prepared.

[0127] Example 7

[0128] Example 7 has substantially the same device structure as Example 2, except that the host material in the light-emitting layer 40 is PATPA.

[0129] Example 8

[0130] Example 8 has substantially the same device structure as Example 2, except that the host material in the light-emitting layer 40 is mPAC.

[0131] Example 9

[0132] Example 9 has substantially the same device structure as Example 2 except that the host material in the light-emitting layer 40 is TPA-PPI.

[0133] Example 10

[0134] Example 10 has substantially the same device structure as Example 2 except that the host material in the light-emitting layer 40 is ppCTPI.

[0135] Example 11

[0136] Example 11 has substantially the same device structure as Example 2 except that the host material in the light-emitting layer 40 is TPINCz.

[0137] Example 12

[0138] Example 12 has substantially the same device structure as Example 2 except that the host material in the light-emitting layer 40 is DPACPhTPI.

[0139] Example 13

[0140] Example 13 has substantially the same device structure as Example 2 except that the host material in the light-emitting layer 40 is BITPI.

[0141] Example 14

[0142] Example 14 has substantially the same device structure as Example 2 except that the host material in the light-emitting layer 40 is CPBPMCN.

[0143] Example 15

[0144] Example 15 has substantially the same device structure as Example 2 except that the host material in the light-emitting layer 40 is TBPMCN.

[0145] Example 16

[0146] Example 16 has substantially the same device structure as Example 2 except that the host material in the light-emitting layer 40 is TPMCN.

[0147] Example 17

[0148] Example 17 has substantially the same device structure as Example 2 except that the host material in the light-emitting layer 40 is 2FPPITPA.

[0149] Example 18

[0150] Example 18 is substantially the same as the device structure of Example 2, except that the host material in the light-emitting layer 40 is CPPCN.

[0151] Example 19

[0152] Example 19 is substantially the same as the device structure of Example 2, except that the phosphorescent material in the light-emitting layer 40 is FIrPic.

[0153] Example 20

[0154] Example 20 is substantially the same as the device structure of Example 2, except that the phosphorescent material in the light-emitting layer 40 is Ir(mppy)3.

[0155] Comparative Example 1

[0156] Comparative Example 1 is substantially the same as the device structure of Example 1, except that in the preparation of the device, the material of the light-emitting layer 40 is only Ir(ppy)3.

[0157] Comparative Example 2

[0158] Comparative Example 2 is substantially the same as the device structure of Example 1, except that in the preparation of the device, the host material in the light-emitting layer 40 is a TADF host material, specifically DMAC-DPS (CAS: 1477512-32-5), and the mass percentage of the phosphorescent material in the host material is 10%.

[0159] Comparative Example 3

[0160] Comparative Example 3 is substantially the same as the device structure of Example 1, except that in the preparation of the device, the host material in the light-emitting layer 40 is a TTA host material, specifically MADN, and the mass percentage of the phosphorescent material in the host material is 10%.

[0161] The light-emitting devices in Examples 1-20 and Comparative Examples 1-3 were tested, and the test results are shown in Table 1 below, where V@10mA / cm 2 represents the driving voltage corresponding to a current density of 10 mA / cm 2 , EQE@10mA / cm 2 represents the external quantum efficiency corresponding to a current density of 10 mA / cm 2 , T 95 @1000cd / m 2 represents the time experienced by the device when the initial luminance is 1000 cd / m 2 , and the luminance decays to 95% of the initial luminance (950 cd / m 2 here).

[0162] Table 1

[0163]

[0164] Referring to Table 1 and Figure 2 It can be seen that the light emitting devices in the embodiments have lower driving voltage, higher external quantum efficiency and higher light emitting lifetime than the light emitting devices in the comparative examples.

[0165] The technical features of the above-described embodiments can be combined in any manner. For the sake of brevity, not all possible combinations are described, but it is understood that the scope of the present specification includes all such possible combinations.

[0166] The above-described embodiments are merely representative of several embodiments of the present application, and the description is relatively specific and detailed, but should not be construed as limiting the scope of the patent. It should be noted that, for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the scope of the present application. Therefore, the scope of the patent of the present application should be subject to the appended claims, and the description and drawings can be used to interpret the content of the claims.

Claims

1. A composition, characterized in that, Including the main material and phosphorescent material; The host material includes one or more compounds having the following general formula: 、 ； Among them, R3, R4, and R7 are each independently selected from substituted or unsubstituted C. 6-60 One or more of the following: aryl, heteroaryl with 5 to 60 substituted or unsubstituted ring atoms, arylamino with 6 to 60 substituted or unsubstituted ring atoms, aryloxy with 6 to 60 substituted or unsubstituted ring atoms, arylthiol with 6 to 60 substituted or unsubstituted ring atoms, heteroarylamino with 5 to 60 substituted or unsubstituted ring atoms, heteroaryloxy with 5 to 60 substituted or unsubstituted ring atoms, and heteroarylthiol with 5 to 60 substituted or unsubstituted ring atoms; The substituents described in R3, R4, and R7, each time appearing, are independently selected from D, halogen, cyano, amino, nitro, mercapto, carbonyl, C. 1-20 Alkyl, C 1-20 alkenyl, C 1-20 Alkoxy groups, heteroaryl groups with 5-30 ring atoms, and C 6-30 A combination of one or more aryl groups; The heteroatoms in the heteroaryl group, the heteroaryloxy group, the heteroarylamino group, and the heteroarylthiol group are each independently selected from one or more of O, P, N, and S; R1, R2, R5, and R6 are each independently selected from H, D, halogen, cyano, amino, nitro, and C. 1-20 Alkyl, C 1-20 Alkoxy groups, heteroaryl groups with 5-20 ring atoms, and C 6-20 One or more of the aryl group; The phosphorescent material includes at least one of Ir complex, Pt complex, Os complex and Re complex.

2. The composition according to claim 1, characterized in that, The host material includes one or more compounds having the following general formula: 、 ； R8 is selected from H, D, halogen, cyano, amino, nitro, and C. 1-14 Alkyl, C 1-14 Alkoxy groups, heteroaryl groups with 5-14 ring atoms, and C 6-14 One or more of the aryl group; R9 and R 11 Each was independently selected from C 6-30 Aryl; R 10 and R 12 Each is independently selected from one of the following structures: ； Among them, the connection site is ; Z represents -N, -CR 26 -NR 27 , O or S; X is -N, -NR 28 -CR 29 CR 30 R 31 S or O; R 13 ~R 25 Each is independently selected from H, D, halogen, cyano, amino, nitro, substituted or unsubstituted C. 1-30 Alkyl, substituted or unsubstituted C 1-30 Alkoxy, substituted or unsubstituted C 1-30 Alkyl mercapto, substituted or unsubstituted C 1-30 One or more of the alkylamine groups; R 26 R 27 R 28 R 29 R 30 R 31 Each is independently selected from H, D, substituted or unsubstituted C. 1-30 Alkyl, substituted or unsubstituted C 1-30 Alkoxy, substituted or unsubstituted C 1-30 Alkyl mercapto, substituted or unsubstituted C 1-30 The number of alkylamine groups, substituted or unsubstituted ring atoms is C. 1-30 One or more of the aryl groups; R 13 ~R 31 The substituents described herein, each time appearing independently, are selected from D, amino, halogen, hydroxyl, carboxyl, nitro, sulfonic acid, mercapto, cyano, carbonyl, C 1-20 Alkyl, C 1-20 alkenyl, C 1-20 Alkoxy groups, heteroaryl groups with 5-20 ring atoms, and C 6-20 One or more of the aryl groups.

3. The composition according to claim 2, characterized in that, R 10 and R 12 Each is independently selected from one of the following groups: ； Among them, R 32 ~R 51 Each is independently selected from H, D, halogen, cyano, amino, nitro, C 1-20 Alkyl, C 1-20 Alkoxy groups, heteroaryl groups with 5-20 ring atoms, and C 6-20 One or more of the aryl group; And / or, R9 and R 11 Each is independently selected from one of the following groups: 。 4. The composition according to claim 3, characterized in that, R9 and R 11 Each is independently selected from one of the following groups: ； And / or, R 10 and R 12 Each is independently selected from one of the following groups: 。 5. The composition according to claim 1, characterized in that, The main material includes at least one of the following materials: 。 6. The composition according to claim 1, characterized in that, The phosphorescent material includes at least one of tris(2-phenylpyridine-C2,N)iridium(III), octaethylporphyrin platinum, bis(4,6-difluorophenylpyridine-C2,N)pyridinecarboxylated iridium, and tris[2-(p-tolyl)pyridine-C2,N)iridium(III).

7. The composition according to any one of claims 1 to 6, characterized in that, The phosphorescent material accounts for 5% to 20% of the mass percentage of the main material.

8. The use of the composition according to any one of claims 1 to 7 in a light-emitting device.

9. A light-emitting device, characterized in that, It includes a first electrode layer, a light-emitting layer, and a second electrode layer stacked sequentially, wherein the material of the light-emitting layer includes the composition according to any one of claims 1 to 7.

10. The light-emitting device according to claim 9, characterized in that, The light-emitting device further includes a hole functional layer and an electron functional layer, wherein the hole functional layer is located between the first electrode layer and the light-emitting layer, and the electron functional layer is located between the light-emitting layer and the second electrode layer; The hole functional layer includes a stacked hole transport layer and / or a hole injection layer. When both a hole transport layer and a hole injection layer are included, the hole transport layer is disposed closer to the light-emitting layer than the hole injection layer. Optionally, the material of the hole transport layer is selected from 4,4',4''-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine, poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly(9-vinylcarbazole), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], 4,4'-bis(9H-carbazole-9-yl)-2,2'-dimethylbiphenyl, 3,3'-bis(9H-carbazole-9-yl)-2,2'-dimethylbiphenyl, etc. The N,N'-di(9-carbazole)biphenyl, 1,3-di-9-carbazolebenzene, 4,4',4''-tris(carbazole-9-yl)triphenylamine, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, poly[bis(4-phenyl)(4-butylphenyl)amine], and N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine TPD; Optionally, the material of the hole injection layer is selected from poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)-diphenylamine), polyarylamines, poly(N-vinylcarbazole), polyaniline-polypyrrole, N,N,N',N'-tetra(4-methoxyphenyl)-benzidine, 4-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl, 4,4',4''-tris[phenyl(m-tolyl)amino]triphenylamine, 4,4',4''-tris(N-carbazolyl)-triphenylamine, 1,1-bis[(di-4-tolylamino)phenylcyclohexane, 4,4',4''-tris(diphenylamino)triphenylamine doped with tetrafluoro-tetracyanoquinone dimethane, p-doped phthalocyanine, F4-TCNQ doped The following are selected from N,N'-diphenyl-N,N'-di(1-naphthyl)-1,1'-biphenyl-4,4'' diamine, hexaaminobenzophenanthrene-hexanonitrile, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, copper phthalocyanine, transition metal oxides, and transition metal chalcogenides, wherein the transition metal oxides are selected from one or more of NiO, MoO2, MoO3, WO3, and CuO, and the metal chalcogenides are selected from one or more of MoS2, MoSe2, WS3, WSe3, and CuS; And / or, the electronic functional layer includes an electron transport layer and / or an electron injection layer stacked together. When both an electron transport layer and an electron injection layer are included, the electron transport layer is disposed closer to the light-emitting layer than the electron injection layer. Optionally, the material of the electron transport layer is selected from one or more of the following: 8-hydroxyquinoline aluminum, diphenyl[4-(triphenylsilyl)phenyl]oxyphosphine, 1,3,5-tris(3-pyridyl-3-phenyl)benzene, 2-(4-biphenyl)-5-phenyloxadiazole, octahydroxyquinoline beryllium, 1,2,4-triazole derivatives, 2,7-bis(diphenylphospho)-9,9'-spirobifluorene, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,6-bis(3,5-di(3-pyridyl)phenyl)-2-methylpyrimidine, and 4,7-diphenyl-1,10-phenanthroline; Optionally, the material of the electron injection layer includes one or more of LiF, Liq, NaF, and CsF; Optionally, the materials of the first electrode layer and the second electrode layer are independently selected from one or more of metals, carbon materials, and metal oxides. The metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxides include doped or undoped metal oxides, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or composite electrodes consisting of metal sandwiched between doped or undoped transparent metal oxides. The composite electrodes include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

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