Device self-heating effect measuring method and device

Abstract

The invention discloses a device self-heating effect measurement method and device, and the method and device are executed based on a self-heating effect measurement device, the self-heating effect measurement device comprises a resistance thermosensitive part, and the resistance thermosensitive part is used for being adjacent to a to-be-measured heating part of a to-be-measured device; under the condition that different working voltages are applied to the to-be-measured device and a constant voltage is applied to the self-heating effect measuring device, obtaining a plurality of target resistance values of a resistance thermosensitive piece adjacent to the to-be-measured heating piece; performing temperature conversion on the plurality of target resistance values based on a conversion relationship between resistance and temperature to obtain a plurality of target temperature variables; and performing thermal resistance operation according to the target temperature variable and the constant voltage to obtain a target thermal resistance parameter of the to-be-tested device. According to the invention, temperature conversion is carried out on the obtained multiple target resistance values to obtain multiple target temperature variables, then the target thermal resistance parameter is obtained, the temperature change of the to-be-measured device can be directly measured, the method is simple and easy to implement, the measurement precision is high, the occupied area is saved, and the measurement cost is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a device self-heating effect measurement method and device. BACKGROUND

[0002] Self-heating effect (SHE) is a phenomenon that part of energy generated by a device during operation is converted into heat energy, resulting in temperature rise of the device. In particular, a high resistance device (HR Device) used as a gate resistor needs high precision. However, due to the influence of self-heating effect, the use temperature of the high resistance device is also affected. Different use temperatures will change the resistance value of the high resistance device itself, resulting in a decrease in precision of the high resistance device during use.

[0003] With the advancement of semiconductor technology, the size of the semiconductor process node is getting smaller and smaller, especially for FINFET process nodes. Accordingly, for most semiconductor devices, especially high resistance devices, higher precision requirements are put forward for analog circuit design. However, the temperature change caused by self-heating effect has a negative impact on resistor devices, so the measurement of device self-heating effect becomes more and more important. Some existing technologies use pulse method to measure the self-heating effect of a device, but need to use expensive measuring equipment, and the pulse width needs to be less than 100 ns, which requires high performance of the measuring equipment, and also cannot directly reflect the change of temperature. SUMMARY

[0004] To solve the problems of the prior art, the embodiments of the present application provide a device self-heating effect measurement method and device. The technical solution is as follows:

[0005] On the one hand, the present application provides a device self-heating effect measurement method, which is executed based on a self-heating effect measurement device. The self-heating effect measurement device includes a resistance thermosensitive element, which is arranged adjacent to a to-be-measured heat generating element of a to-be-measured device. The method comprises:

[0006] In the case that different working voltages are applied to the to-be-measured device and a constant voltage is applied to the self-heating effect measurement device, a plurality of target resistance values of the resistance thermosensitive element adjacent to the to-be-measured heat generating element are obtained;

[0007] Based on the conversion relationship between resistance and temperature, the plurality of target resistance values are temperature-converted to obtain a plurality of target temperature variables;

[0008] According to the target temperature variables and the constant voltage, thermal resistance calculation is performed to obtain a target thermal resistance parameter of the to-be-measured device.

[0009] Further, the constant voltage is 0.01V-0.08V.

[0010] Further, the self-heating effect measuring device comprises a plurality of the resistance thermometers, and during the self-heating effect measuring process, the plurality of the resistance thermometers are arrayed around the periphery of the to-be-measured device.

[0011] Further, during the self-heating effect measuring process, the critical distance between the resistance thermometer and the adjacent to-be-measured heat-generating component is less than or equal to 1μm, and the critical distance is the upper limit of the distance between the resistance thermometer and the to-be-measured heat-generating component.

[0012] Further, based on the conversion relationship between resistance and temperature, the temperature conversion is performed on the plurality of target resistance values to obtain a plurality of target temperature variables, which comprises:

[0013] The reference resistance value and the resistance temperature coefficient of the resistance thermometer are obtained; the resistance temperature coefficient is obtained based on the resistance temperature characteristic curve of the resistance thermometer;

[0014] According to the plurality of target resistance values and the reference resistance value, a plurality of target resistance ratios between the plurality of target resistance values and the reference resistance value are determined;

[0015] Based on the resistance temperature coefficient, the temperature conversion is performed on the plurality of target resistance ratios to obtain the target temperature variable corresponding to each of the plurality of target resistance ratios.

[0016] Further, the thermal resistance calculation based on the target temperature variable and the constant voltage to obtain the target thermal resistance parameter of the to-be-measured device comprises:

[0017] A plurality of target working currents of the self-heating effect measuring device are obtained; the plurality of target working currents correspond to the plurality of target resistance values one by one;

[0018] The target working power of the self-heating effect measuring device is determined according to the target working current and the constant voltage;

[0019] Based on the corresponding relationship among power, temperature variable and thermal resistance parameter, the target thermal resistance parameter corresponding to the plurality of target working powers and the plurality of target temperature variables is determined.

[0020] Further, the to-be-measured heat-generating component is a layer of thermistor material.

[0021] Further, the to-be-measured device comprises at least one of a temperature-sensitive device and a temperature-sensitive circuit.

[0022] Further, the device under test comprises a plurality of first metal wiring layers electrically connected to the heat generating part under test, and the self-heating effect measurement device comprises a plurality of second metal wiring layers electrically connected to the resistance thermosensitive part.

[0023] In the self-heating effect measurement process, the first metal wiring layers are arranged adjacent to the second metal wiring layers.

[0024] In another aspect, the application further provides a device self-heating effect measurement device based on a self-heating effect measurement device, the self-heating effect measurement device comprising a resistance thermosensitive part arranged adjacent to a heat generating part under test of a device under test, and the device comprises:

[0025] A data acquisition module is configured to acquire a plurality of target resistance values of the resistance thermosensitive part adjacent to the heat generating part under test under the condition that different working voltages are applied to the device under test and a constant voltage is applied to the self-heating effect measurement device.

[0026] A temperature conversion module is configured to perform temperature conversion on the plurality of target resistance values based on a conversion relationship between resistance and temperature to obtain a plurality of target temperature variables.

[0027] A thermal resistance calculation module is configured to perform thermal resistance calculation based on the target temperature variables and the constant voltage to obtain a target thermal resistance parameter of the device under test.

[0028] The application has the following beneficial effects:

[0029] The application arranges the resistance thermosensitive part of the self-heating effect measurement device adjacent to the heat generating part under test of the device under test, acquires a plurality of target resistance values of the resistance thermosensitive part, performs temperature conversion on the plurality of target resistance values based on a conversion relationship between resistance and temperature to obtain a plurality of target temperature variables corresponding to the plurality of target resistance values, can directly measure and display the temperature change of the environment in which the resistance thermosensitive part and the heat generating part under test are located, and is fast and convenient to measure. Moreover, performing thermal resistance calculation based on the target temperature variables and the constant voltage applied to the self-heating effect measurement device can directly obtain a target thermal resistance parameter for characterizing the self-heating effect of the device under test, the measurement method is simple and easy to implement, the measurement precision and efficiency of the self-heating effect of the device are high, the structural layout of the self-heating effect measurement device and the device under test is simple, the occupied area can be greatly saved, the performance requirements of the measurement equipment such as the self-heating effect measurement device can be greatly reduced, and the measurement cost is greatly reduced. BRIEF DESCRIPTION OF DRAWINGS

[0030] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 A logic structure diagram of a device self-heating effect measurement method provided in this application embodiment;

[0032] Figure 2 A layout diagram of a device under test and a self-heating effect measuring device provided in an embodiment of this application;

[0033] Figure 3 A graph of the working voltage applied during the self-heating effect measurement process provided in the embodiments of this application;

[0034] Figure 4 Provided for the embodiments of this application Figure 3 The resistance-time characteristic curves of the device under test and the self-heating effect measuring device are shown under the operating voltage conditions.

[0035] Figure 5 Another layout diagram of the device under test and the self-heating effect measuring device provided in the embodiments of this application;

[0036] Figure 6 A logic structure diagram of a temperature conversion method provided in an embodiment of this application;

[0037] Figure 7 The resistance-temperature characteristic curve of the resistance thermistor in the self-heating effect measuring device provided in the embodiments of this application;

[0038] Figure 8 A logical structure diagram of a thermal resistance calculation method provided in an embodiment of this application;

[0039] Figure 9 A three-dimensional structural diagram of a device under test and a self-heating effect measuring device provided in an embodiment of this application;

[0040] Figure 10 A schematic diagram of a high-impedance device provided for an embodiment of this application;

[0041] Figure 11 A flowchart illustrating a method for measuring the self-heating effect of a high-impedance device, as provided in this application embodiment;

[0042] Figure 12 A schematic diagram of a device for measuring the self-heating effect of a device provided in an embodiment of this application;

[0043] Figure 13A hardware structure block diagram of an electronic device for performing a self-heating effect measurement method of a device is provided in the embodiments of the present application.

[0044] In the drawings:

[0045] 100 - device to be measured, 110 - heat generating layer to be measured, 120 - first metal wiring layer, 200 - self-heating effect measurement device, 210 - resistance thermal element, 220 - second metal wiring layer, 300 - high impedance device, 400 - field effect transistor, 500 - output port. DETAILED DESCRIPTION

[0046] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of the present application.

[0047] It should be noted that the terms "first", "second" and the like in the specification and claims of the present application and the above-described drawings are used to distinguish similar objects, and do not necessarily indicate a specific object or a chronological order. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or server including a series of steps or units need not be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0048] It should be understood that when an element or layer is referred to as being "on", "adjacent", "connected" or "coupled" to another element or layer, it can be directly on, adjacent, connected or coupled to the other element or layer, or one intervening element or layer can be present. In contrast, when an element is referred to as being "directly on", "directly adjacent", "directly connected" or "directly coupled" to another element or layer, then there are no intervening elements or layers present. It will be understood that the depth direction of an element or layer is a direction perpendicular to the surface of the element or layer, and the cross-sectional direction of an element or layer is a direction parallel to the surface of the element or layer. It will be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application. Conversely, a second element, component, region, layer or section discussed below could be termed a first element, component, region, layer or section without departing from the teachings of the present application.

[0049] At present, the conventional semiconductor process adopts a polysilicon gate, and the FINFET process node adopts a metal gate, both of which need to have a relatively high resistance, so it is necessary to introduce a high-impedance device. The high-impedance device is a semiconductor device having a relatively high resistance, which can limit the gate current, reduce the switching speed, reduce electromagnetic interference, prevent the gate from oscillating, and improve the operating stability of the semiconductor device. In addition, the high-impedance device is usually a tantalum nitride (TaN) thin film, which has good compatibility with the CMOS process, good chemical / thermal stability, low temperature coefficient of resistance (TCR), and is often used as a high-precision resistor.

[0050] However, even the tantalum nitride thin film with a low temperature coefficient of resistance will inevitably be affected by the self-heating effect, resulting in a decrease in the precision of the high-impedance device during operation. In particular, as the FINFET process node continues to shrink, higher precision is required for analog circuit design, so the measurement of the self-heating effect of the device becomes more and more important. In the prior art, the pulse method is used for measurement, but the measurement equipment used by the pulse method is expensive and has high performance requirements, and the measurement is not easy, and the temperature change cannot be reflected.

[0051] To address at least one of the problems encountered in the measurement of the self-heating effect, this application provides a method and apparatus for measuring the self-heating effect of a device. The method and apparatus are based on a self-heating effect measuring device, which includes a resistive thermistor. The resistive thermistor is arranged adjacent to the heat-generating component of the device under test (DUT). The resistance value of the resistive thermistor changes with the operating temperature of the self-heating effect measuring device, thereby reflecting the temperature change of the environment in which the resistive thermistor is located through the change in resistance value. During the measurement of the self-heating effect of the DUT, the resistive thermistor and the heat-generating component are arranged adjacent to each other, and different working conditions are applied to the DUT. By applying a constant voltage to the self-heating effect measuring device, multiple target resistance values ​​of the resistive thermistors adjacent to the heat-generating device under test are obtained. Then, based on the conversion relationship between resistance and temperature, the multiple target resistance values ​​are converted to temperature to obtain the target temperature variables corresponding to each target resistance value. Finally, thermal resistance calculation is performed based on the target temperature variables and the constant voltage to obtain the target thermal resistance parameters that characterize the self-heating effect of the device under test. This measurement method is simple and easy to implement, requires simple measuring equipment, is convenient and quick to set up, and has low performance requirements for measuring equipment. It can greatly improve the measurement efficiency of the self-heating effect of the device and reduce the measurement cost.

[0052] The method for measuring the self-heating effect of the device according to embodiments of this application is described in detail below, with reference to the appendix to the specification. Figure 1 The method includes:

[0053] S101, under the condition of applying different working voltages to the device under test and applying a constant voltage to the self-heating effect measuring device, obtain multiple target resistance values ​​of the resistive thermistor adjacent to the heating element under test.

[0054] Among them, such as Figure 2 As shown, during the self-heating effect measurement of the device under test 100, the heat-generating element 110 in the device under test 100 generates heat in the on state, causing the temperature of the environment around the heat-generating element 110 to rise. The resistance thermistor 210 of the self-heating effect measuring device 200 is arranged adjacent to the heat-generating element 110, and can conduct the heat generated by the heat-generating element 110 to the resistance thermistor 210, causing the temperature of the environment where the resistance thermistor 210 is located, i.e., the operating temperature of the resistance thermistor 210, to rise. The resistance value of the resistance thermistor 210 changes with the change of operating temperature. This step converts the self-heating effect of the heat-generating element 110 into a change in the resistance value of the resistance thermistor 210 that is easy to measure, improving the simplicity and convenience of subsequent measurement and calculation steps. For example, in an exemplary embodiment, the resistance value of the resistance thermistor 210 decreases with the increase of heat (i.e., the increase of operating temperature).

[0055] Multiple target resistance values ​​are obtained by detecting the resistance of the thermistor 210 under conditions where different operating voltages (VDD) are applied to the device under test 100, causing temperature changes in the heating element 110. Furthermore, during the resistance detection of a single target resistance value, the operating voltage is kept constant to improve the accuracy of the resistance detection; for example, Figure 2 As shown, the operating voltage is applied to the device under test (DUT) 100 through its input terminal (Force) and output terminal (Com), as follows: Figure 3 As shown, multiple operating voltages change as the measurement process progresses, i.e., multiple operating voltages change with the measurement time; for example, in one specific embodiment, multiple operating voltages increase with the increase of measurement time, and different operating voltages change in a stepwise manner with the measurement time; multiple operating voltages are preset, and different sets of multiple operating voltages that change with the measurement time can be selected according to different devices under test 100, and this application does not specifically limit this; in this way, different operating voltages are scanned on the device under test 100 to make the heating element 110 under test generate different amounts of heat, and generate multiple temperature changes that change with the measurement time corresponding to multiple different operating voltages. The multiple temperature changes are consistent with the temperature changes of the environment in which the resistive thermistor 210 is located during different measurement times, thereby obtaining multiple target resistance values ​​that correspond to different temperature changes, i.e., as shown in the figure. Figure 4 As shown, during the measurement time, the multiple target resistance values ​​of the self-heating effect measuring device 200 are finally measured and correspond one-to-one with the different operating voltages applied to the device under test 100. In addition, in some exemplary embodiments, the resistance of the resistive thermistor 210 can be directly measured by measuring equipment such as multimeters and ohmmeters. The performance requirements of the measuring equipment are not high, and the measuring equipment is inexpensive and readily available, which greatly reduces the measurement difficulty and cost of the device's self-heating effect.

[0056] S103, based on the conversion relationship between resistance and temperature, perform temperature conversion on the multiple target resistance values ​​to obtain multiple target temperature variables.

[0057] In this step, the conversion relationship between resistance and temperature is used to indicate the corresponding relationship among the resistance value of the resistance thermosensitive element 210, the reference resistance value, and the temperature variation; wherein the resistance value of the resistance thermosensitive element 210 is the resistance value at the current working temperature of the resistance thermosensitive element 210, that is, the target resistance value measured in the S101 step, and the working temperature is the real-time temperature of the environment in which the current resistance thermosensitive element 210 is located, which is affected by the heat generated by the to-be-measured heat generating element 110; the reference resistance value is the resistance value of the resistance thermosensitive element 210 at the reference temperature, and the reference temperature can be selected as different temperatures. In some exemplary embodiments, the reference temperature can be room temperature, or the reference temperature can be 20-25°C. Corresponding to the reference temperature, the resistance thermosensitive element 210 itself has a reference resistance value corresponding to the reference temperature. For example, if the reference temperature is 25°C, the reference resistance value is the resistance value of the resistance thermosensitive element 210 at 25°C.

[0058] The temperature variation is the difference between the working temperature and the reference temperature. In some exemplary embodiments, the target temperature variation obtained in the S103 step can be directly displayed to make the temperature change in the measurement process more intuitive. The target temperature variation is the temperature change of the working environment of the resistance thermosensitive element 210, and the target temperature variation of the self-heating effect measurement device 200 is equal to the temperature change of the environment in which the to-be-measured heat generating element 110 is located, that is, the display of the target temperature variation can also directly reflect the temperature change of the to-be-measured device 100, thereby improving the visualization degree of the device self-heating effect measurement process. In addition, in other exemplary embodiments, the current real-time working temperature can also be calculated and displayed based on multiple target temperature variations. Specifically, the multiple target temperature variations can be directly added to the reference temperature, which is convenient and fast, and can more intuitively show the temperature change caused by the self-heating effect.

[0059] S105, performing thermal resistance calculation according to the target temperature variation and the constant voltage to obtain a target thermal resistance parameter of the to-be-measured device.

[0060] The thermal resistance parameter is used to describe the physical quantity of the resistance of the heat-conducting material to heat conduction. The greater the thermal resistance, the greater the resistance of the heat-conducting material to heat conduction, and then the heat generated by the heat-conducting material during use is not easy to be taken away, which causes the heat-conducting material to heat up and affect its use precision. Correspondingly, the target thermal resistance parameter obtained in the S105 step is used to characterize the self-heating effect of the to-be-measured device 100, so as to describe the phenomenon that the heat generated by the to-be-measured device 100 in the working state causes the temperature to rise and affects the use precision.

[0061] The constant voltage is the voltage applied to the self-heating effect measurement device 200 during the self-heating effect measurement process, so that the self-heating effect measurement device 200 is turned on.

[0062] Specifically, asFigure 3 As shown, the constant voltage remains constant with the change of the measurement time during the self-heating effect measurement; the constant voltage is 0.01V-0.08V, that is, the constant voltage is a constant small voltage; it can be understood that the constant voltage can be any point value in 0.01V-0.08V, and any point value in 0.01V-0.08V is used as the constant voltage during the self-heating effect measurement, and the constant voltage is maintained at the voltage value corresponding to the constant small voltage during the entire self-heating effect measurement; for example, the constant voltage can be 0.01V, 0.02V, 0.04V, 0.05V, 0.06V, 0.07V, 0.08V, etc.; under the constant voltage, the state of the device under test 100 during the self-heating effect measurement is more consistent with the actual operating state, and the self-heating effect generated by the device under test 100 is more consistent with the self-heating effect under the actual operating state; also excluding the influence of VDD effect and other factors, avoiding the ion change of the depletion layer in the self-heating effect measurement device 200 under high voltage to produce additional influence on the resistance value of the resistance thermal element 210, that is, avoiding the influence on the linear relationship between the resistance value of the resistance thermal element 210 and the temperature change variable, making the correlation between the resistance value change of the resistance thermal element 210 and the temperature change variable more reliable; and using a constant small voltage is conducive to improving the range accuracy of the self-heating effect measurement method, improving the measurement accuracy and measurement reliability; in some preferred embodiments, the constant voltage is 0.01V-0.05V.

[0063] Specifically, as shown in Figure 2 As shown, one self-heating effect measurement device 200 is arranged on one side of the device under test 100, and the self-heating effect measurement device 200 includes one resistance thermal element 210, which is arranged adjacent to the heating element 110 of the device under test 100 to measure the self-heating effect of the device under test 100 through S101-S105 steps; in addition, in some exemplary embodiments, mismatch testing can also be performed through the layout of the device under test 100 and the self-heating effect measurement device 200 arranged adjacent to each other, using the original device under test 100 as the self-heating effect measurement device, and using the original self-heating effect measurement device 200 as the device under test, and measuring the self-heating effect of the original self-heating effect measurement device 200 through the same steps. The layout can greatly save the occupied area.

[0064] Specifically, as shown in Figure 5 As shown, the self-heating effect measurement device 200 includes a plurality of resistance thermal elements 210, and during the self-heating effect measurement, the plurality of resistance thermal elements 210 are arrayed around the device under test 100, and the plurality of resistance thermal elements 210 are uniformly distributed around the device under test 100, and the critical distance between the heating element 110 and each resistance thermal element 210 around it is equal, so that Figure 5As shown in the layout, the critical distance between the to-be-tested heat-generating component 110 and the upper one of the resistance thermosensitive components 210, the critical distance between the to-be-tested heat-generating component 110 and the lower one of the resistance thermosensitive components 210, the critical distance between the to-be-tested heat-generating component 110 and the left one of the resistance thermosensitive components 210, and the critical distance between the to-be-tested heat-generating component 110 and the right one of the resistance thermosensitive components 210 are all equal, so as to improve the temperature uniformity of the periphery of the to-be-tested component 100 and the to-be-tested heat-generating component 110, and improve the accuracy and reliability of the self-heating effect measurement.

[0065] Specifically, in the self-heating effect measurement process, the critical distance between the resistance thermosensitive component 210 and the adjacent to-be-tested heat-generating component 110 is less than or equal to 1 μm, which is the upper limit of the distance between the resistance thermosensitive component 210 and the to-be-tested heat-generating component 110. It can be understood that the critical distance can be any point value less than or equal to 1 μm. For example, the critical distance can be 1 μm, 0.9 μm, 0.85 μm, 0.7 μm, 0.6 μm, 0.5 μm, etc. In this way, the distance between the to-be-tested heat-generating component 110 and the resistance thermosensitive component 210 is close, so that the heat generated by the to-be-tested heat-generating component 110 is almost completely conducted to the resistance thermosensitive component 210, improving the heat transfer efficiency, reducing heat loss, and improving the accuracy of the self-heating effect measurement. In one specific embodiment, the critical distance between the resistance thermosensitive component 210 and the adjacent to-be-tested heat-generating component 110 is less than 1 μm.

[0066] Specifically, as shown in the layout, the resistance thermosensitive component 210 is arranged on the periphery of the to-be-tested heat-generating component 110, and the resistance thermosensitive component 210 is arranged on the periphery of the to-be-tested heat-generating component 110. Figure 6 As shown, the target temperature change variable is obtained by converting the plurality of target resistance values based on the conversion relationship between resistance and temperature, that is, the S103 step includes:

[0067] S202, obtaining the reference resistance value and the resistance temperature coefficient of the resistance thermosensitive component.

[0068] S204, determining a plurality of target resistance ratio values between the plurality of target resistance values and the reference resistance value according to the plurality of target resistance values and the reference resistance value.

[0069] S206, temperature conversion of the plurality of target resistance ratio values based on the resistance temperature coefficient, to obtain the target temperature change variable corresponding to each of the plurality of target resistance ratio values.

[0070] The reference resistance value can be directly measured by a multimeter at a reference temperature to obtain the resistance value of the resistance thermosensitive component 210, and the reference resistance value is obtained in a simple and convenient manner.

[0071] The temperature coefficient of resistance (TCR) is a physical quantity describing the change of resistance value of a material with temperature, which is obtained based on a resistance temperature characteristic curve of the resistance thermosensitive element 210, which can be obtained by collecting the resistance values of the resistance thermosensitive element 210 at different temperatures, and model fitting the resistance values with the temperatures, as shown in the following formula: Figure 7 The temperature coefficient of resistance is the ratio of the resistance ratio between the resistance value and the reference resistance value and the temperature difference between the working temperature and the reference temperature. The temperature difference between the working temperature and the reference temperature can be calculated inversely by the temperature coefficient of resistance. The target temperature variable can be calculated by the following formula:

[0072]

[0073] Wherein, AT is the temperature variable of the resistance thermosensitive element relative to the reference temperature, R is the resistance value of the resistance thermosensitive element at the working temperature, R0 is the reference resistance value of the resistance thermosensitive element, and TCR is the resistance temperature coefficient obtained by model fitting.

[0074] In the S204 step, the measured multiple target resistance values are divided by the reference resistance value, and multiple target resistance ratios R / R0 are obtained. Then in the S206 step, the multiple target resistance ratios are divided by the resistance temperature coefficient, and the temperature conversion is completed to obtain the target temperature variable corresponding to each of the multiple target resistance ratios, i.e., the target temperature variable corresponding to each of the multiple target resistance values. The measurement is fast and convenient, the calculation is simple, and the measurement efficiency of the self-heating effect is greatly improved.

[0075] Specifically, as shown in the following formula: Figure 8 The thermal resistance calculation according to the target temperature variable and the constant voltage to obtain the target thermal resistance parameter of the device under test, i.e., the S105 step includes:

[0076] S301, obtaining multiple target working currents of the self-heating effect measurement device.

[0077] Wherein, the multiple target working currents correspond one-to-one to the multiple target resistance values; the target working current is obtained by detecting the current of the resistance thermosensitive element 210 when the device under test 100 is applied with different working voltages to cause the temperature change of the heating device 110; in some exemplary embodiments, the current detection of the resistance thermosensitive element 210 can also be directly measured by a multimeter or an ammeter, and the performance requirement of the measuring device is not high, the measuring device is low in cost and easy to obtain, and the measurement difficulty and cost of the device self-heating effect are greatly reduced.

[0078] S303, determining the target working power of the self-heating effect measurement device according to the target working current and the constant voltage.

[0079] This step is a power calculation step, and the target working power can be calculated by the following formula:

[0080] P = V x I

[0081] Wherein, P is the target working power of the resistance thermal sensitive component, V is the constant voltage, and I is the target working current.

[0082] S305, determining the target thermal resistance parameter corresponding to the target working power and the target temperature change variable based on the corresponding relationship among the power, the temperature change variable, and the thermal resistance parameter.

[0083] In this step, the corresponding relationship among the power, the temperature change variable, and the thermal resistance parameter is used to indicate the corresponding relationship among the working power, the temperature change variable, and the thermal resistance parameter of the self-heating effect measuring device 200, and the target thermal resistance parameter R th can be calculated by the following formula:

[0084] R th = ΔT / P.

[0085] In this way, the calculation logic of the target thermal resistance parameter is simple and less prone to errors, which can greatly improve the measurement simplicity and accuracy of the self-heating effect measuring method of the device, reduce the measurement difficulty, and save the measurement cost.

[0086] Specifically, in some exemplary embodiments, as shown in Figure 9 , the to-be-measured heat generating component 110 and the resistance thermal sensitive component 210 have a virtual layer (not an actual layer structure), and the critical distance between the to-be-measured heat generating component 110 and the resistance thermal sensitive component 210 is extremely small. The virtual layer between the to-be-measured heat generating component 110 and the resistance thermal sensitive component 210 can conduct heat and improve the heat transfer efficiency and reduce heat loss.

[0087] Specifically, as shown in Figure 9 , the to-be-measured device 100 includes a plurality of first metal wiring layers 120, and the first metal wiring layers 120 are electrically connected to the to-be-measured heat generating component 110; the self-heating effect measuring device 200 includes a plurality of second metal wiring layers 220, and the second metal wiring layers 220 are electrically connected to the resistance thermal sensitive component 210; during the self-heating effect measurement, the first metal wiring layers 120 and the second metal wiring layers 220 are arranged adjacently, for conducting heat between the to-be-measured heat generating component 110 of the to-be-measured device 100 and the resistance thermal sensitive component 210 of the self-heating effect measuring device 200, improving the heat transfer efficiency, reducing the heat loss, and improving the measurement accuracy of the self-heating effect of the device.

[0088] In some exemplary embodiments, as shown in Figure 9As shown, the to-be-tested heat-generating component 110 is located between the multiple layers of the first metal wiring layer 120, and thus the heat generated by the to-be-tested heat-generating component 110 is conducted to the self-heating effect measuring device 200 at least through the upper layer of the first metal wiring layer 120 and the lower layer of the first metal wiring layer 120 of the to-be-tested heat-generating component 110; correspondingly, in some other exemplary embodiments, the resistance thermosensitive component 210 is located between the multiple layers of the second metal wiring layer 220, and thus the resistance thermosensitive component 210 receives heat at least through the upper layer of the second metal wiring layer 220 and the lower layer of the second metal wiring layer 220 of the resistance thermosensitive component 210 to change the working temperature of the resistance thermosensitive component 210 in the self-heating effect measuring device 200, greatly improve the heat conduction efficiency, reduce the heat loss, so that the heat generated by the to-be-tested heat-generating component 110 is almost entirely conducted to the resistance thermosensitive component 210, and the heat loss is almost negligible, that is, the temperature change of the to-be-tested heat-generating component 110 is equal to the temperature change of the resistance thermosensitive component 210, and the measurement accuracy of the self-heating effect of the to-be-tested component 100 is improved.

[0089] Specifically, the to-be-tested heat-generating component 110 is a thermistor material layer, that is, the material of the to-be-tested heat-generating component 110 is a thermistor material. In some exemplary embodiments, the material of the thermistor material layer is a thermistor material, and the thermistor material includes at least one of copper, cobalt, and tantalum nitride. The thermistor material inevitably generates self-heating effect during use, and thus the self-heating effect of the thermistor material layer can be accurately measured by the device self-heating effect measuring method provided in the present application, and the measurement process is fast, simple, convenient, and has good applicability.

[0090] Specifically, the to-be-tested component 100 includes at least one of a temperature-sensitive device and a temperature-sensitive circuit. In some exemplary embodiments, the to-be-tested component 100 includes at least one of a high-impedance device (HR), an N-type oxide semiconductor well resistance (NWRS), a diode, a bipolar junction transistor (BJT), and a bandgap circuit. The temperature-sensitive device and the temperature-sensitive circuit are prone to generate self-heating effect during use, and thus the self-heating effect of the temperature-sensitive device and the temperature-sensitive circuit can be accurately measured by the device self-heating effect measuring method provided in the present application, and the measurement process is fast, simple, and convenient. The device self-heating effect measuring method is suitable for measuring the self-heating effect of a plurality of different devices, and has good universality.

[0091] In addition, the device under test 100 and the self-heating effect measurement device 200 can be the same device. In some exemplary embodiments, the resistance thermosensitive element 210 in the self-heating effect measurement device 200 can be a layer of thermosensitive resistance material to obtain a plurality of target temperature variables. In other exemplary embodiments, the self-heating effect measurement device 200 can include at least one of a temperature-sensitive device and a temperature-sensitive circuit to obtain a plurality of target temperature variables. In other exemplary embodiments, the device self-heating effect measurement method can also be used for mismatch testing, measuring the self-heating effect of the self-heating effect measurement device 200, and good measurement flexibility and convenience.

[0092] As shown in Figure 10 , the high-impedance device 300 (HR) is connected to the gate of the field effect transistor 400, for example, the gate of a MOS transistor, and the other end is connected to the output interface 500. The high-impedance device 300 usually needs high precision to effectively provide stable high resistance, limit gate current, reduce switching speed, reduce electromagnetic interference, prevent gate oscillation, and improve the operating stability of the field effect transistor 400. Taking the self-heating effect of the high-impedance device as an example, as shown in Figure 11 , the specific process of the device self-heating effect measurement method in a specific embodiment is introduced below.

[0093] The high-impedance device and the self-heating effect measurement device are arranged adjacent to each other, and the critical distance between them is less than 1 μm. The high-impedance device and the self-heating effect measurement device are connected to the power supply through a metal wire. Then, the high-impedance device is scanned with different working voltages, and a constant small voltage is applied to the self-heating effect measurement device, which is 0.05 V. The high-impedance device and the self-heating effect measurement device are both turned on, and the self-heating effect measurement process begins.

[0094] S1, during the self-heating effect measurement process of the device under test, the device under test is scanned with different working voltages varying between -3 V and 3 V, and a plurality of target resistance values of the resistance thermosensitive element are obtained by a multimeter. The plurality of target resistance values correspond to the plurality of working voltages one by one.

[0095] S2, determine the reference temperature of the resistance thermosensitive element, and obtain the reference resistance value of the resistance thermosensitive element at the reference temperature.

[0096] S3, measure a plurality of working temperatures and a plurality of resistance values of the resistance thermosensitive element, model fit the plurality of working temperatures and the plurality of resistance values, obtain the resistance temperature characteristic curve of the resistance thermosensitive element, and obtain the resistance temperature coefficient of the resistance thermosensitive element.

[0097] S4, according to the plurality of target resistance values and the reference resistance value, determine a plurality of target resistance ratios between the plurality of target resistance values and the reference resistance value.

[0098] S5, performing temperature conversion on the plurality of target resistance ratios by dividing the plurality of target resistance ratios by a resistance temperature coefficient based on a conversion correspondence between resistance and temperature, to obtain a plurality of target temperature variables corresponding to the plurality of target resistance ratios respectively.

[0099] S6, obtaining a plurality of target working currents of the self-heating effect measuring device by a multimeter measurement; the plurality of target working currents correspond to the plurality of target resistance values one by one.

[0100] S7, determining a target working power of the self-heating effect measuring device according to the target working current and the constant small voltage.

[0101] S8, obtaining a plurality of target thermal resistance parameters corresponding to the plurality of target working powers and the plurality of target temperature variables by dividing the plurality of target temperature variables by the plurality of target working powers based on a correspondence between the power, the temperature variable and the thermal resistance parameter, the target thermal resistance parameter being used to represent the self-heating effect of the high-impedance device.

[0102] Corresponding to the device self-heating effect measuring method provided in the above embodiment of the application, the device self-heating effect measuring device provided in the embodiment of the application can implement the device self-heating effect measuring method in the above method embodiment, wherein, as shown in the device self-heating effect measuring device can include: Figure 12

[0103] The data acquisition module 1210 is configured to acquire a plurality of target resistance values of the resistance thermosensitive element adjacent to the to-be-measured device under the condition that different working voltages are applied to the to-be-measured device and a constant voltage is applied to the self-heating effect measuring device.

[0104] The temperature conversion module 1220 is configured to perform temperature conversion on the plurality of target resistance values based on a conversion relationship between resistance and temperature, to obtain a plurality of target temperature variables.

[0105] The thermal resistance calculation module 1230 is configured to perform thermal resistance calculation according to the target temperature variable and the constant voltage, to obtain a target thermal resistance parameter of the to-be-measured device.

[0106] Specifically, the temperature conversion module can include:

[0107] The thermosensitive parameter acquisition module is configured to acquire a reference resistance value and a resistance temperature coefficient of the resistance thermosensitive element; the resistance temperature coefficient is obtained based on a resistance temperature characteristic curve of the resistance thermosensitive element.

[0108] The resistance ratio calculation module is configured to determine a plurality of target resistance ratios between the plurality of target resistance values and the reference resistance value according to the plurality of target resistance values and the reference resistance value.

[0109] ​The temperature change calculation module is configured to perform temperature conversion on the plurality of target resistance ratios based on the resistance temperature coefficient to obtain a target temperature change variable corresponding to each of the plurality of target resistance ratios.

[0110] Specifically, the thermal resistance calculation module can include:

[0111] The working current acquisition module is configured to acquire a plurality of target working currents of the self-heating effect measurement device, the plurality of target working currents corresponding to the plurality of target resistance values one by one.

[0112] The working power calculation module is configured to determine a target working power of the self-heating effect measurement device according to the target working current and the constant voltage.

[0113] The thermal resistance parameter calculation module is configured to determine a target thermal resistance parameter corresponding to the plurality of target working powers and the plurality of target temperature change variables based on a corresponding relationship among power, temperature change variable and thermal resistance parameter.

[0114] It should be noted that the device self-heating effect measurement device provided in the above embodiments, in realizing its functions, is only exemplified by the division of the above functional modules, and in actual application, the above functions can be completed by different functional modules according to needs, that is, the internal structure of the device is divided into different functional modules to complete all or part of the above described functions. In addition, the device self-heating effect measurement device and method embodiments provided in the above embodiments belong to the same concept, and the specific implementation process is detailed in the method embodiments, which will not be repeated here.

[0115] The device self-heating effect measurement device includes a processor and a memory, wherein the processor (or CPU (Central Processing Unit)) is a core component, and its functions mainly include interpreting memory instructions and processing data fed back by various modules; the structure of the processor is roughly divided into an arithmetic logic unit and a register unit, the arithmetic logic unit mainly performs relevant logical calculations (such as shift operation, logical operation, fixed-point or floating-point arithmetic operation and address operation, etc.), and the register unit is used to temporarily store instructions, data and addresses.

[0116] A memory is a storage device used to store software programs and modules. A processor executes various functional applications and data processing by running the software programs and modules stored in the memory. The memory mainly includes a program storage area and a data storage area. The program storage area may store the operating system, including but not limited to Windows (an operating system), Linux (an operating system), etc., which this application does not limit. In addition, it may also store application programs required for functions. For example, the memory storage space also contains at least one instruction suitable for being loaded and executed by the processor; these instructions may be one or more computer programs (including program code). The data storage area may store data created according to the use of the device. Correspondingly, the memory may also include a memory controller to provide the processor with access to the memory.

[0117] The methods and embodiments provided in this application can be executed in electronic devices such as mobile terminals, computer terminals, servers, or similar computing devices. Figure 13 This is a hardware structure block diagram of an electronic device for measuring the self-heating effect of a device, as provided in an embodiment of this application. Figure 13 As shown, the electronic device 1300 can vary significantly due to different configurations or performance. It may include one or more central processing units (CPUs) 1310 (CPUs 1310 may include, but are not limited to, microprocessors (MCUs) or programmable logic devices (FPGAs), a memory 1330 for storing data, and one or more storage media 1320 (e.g., one or more mass storage devices) for storing application programs 1323 or data 1322. The memory 1330 and storage media 1320 may be temporary or persistent storage. The program stored in the storage media 1320 may include one or more modules, each module including a series of instruction operations on the electronic device. Furthermore, the CPU 1310 may be configured to communicate with the storage media 1320 and execute the series of instruction operations in the storage media 1320 on the electronic device 1300. Electronic device 1300 may also include one or more power supplies 1360, one or more wired or wireless network interfaces 1350, one or more input / output interfaces 1340, and / or one or more operating systems 1321, such as Windows Server™, Mac OS X™, Unix™, Linux™, FreeBSD™, etc.

[0118] The input / output interface 1340 can be configured to receive or transmit data via a network. Examples of the network can include a wireless network provided by a communication provider of the electronic device 1300. In an example, the input / output interface 1340 includes a network interface controller (NIC) that can be connected to other network devices through a base station to communicate with the Internet. In an example, the input / output interface 1340 can be a radio frequency (RF) module that is configured to communicate with the Internet through a wireless manner.

[0119] Those skilled in the art can understand that, Figure 13 The illustrated structure is merely schematic and does not limit the structure of the electronic device described above. For example, the electronic device 1300 can further include more or less components than those shown, or have a different configuration of components than those shown. Figure 13 For example, the electronic device 1300 can further include more or less components than those shown, or have a different configuration of components than those shown. Figure 13 For example, the electronic device 1300 can further include more or less components than those shown, or have a different configuration of components than those shown.

[0120] The embodiments of the present application further provide a storage medium in which at least one instruction or at least one program is stored, and the at least one instruction or the at least one program is loaded and executed by a processor to implement the device self-heating effect measurement method described above. Optionally, the storage medium can be located in at least one of a plurality of network servers of a computer network. In addition, the storage medium can include, but is not limited to, a random access memory (RAM), a read-only memory (ROM), a non-volatile memory (NVM), a U disk, a mobile hard disk, a disk storage device, a flash memory device, other volatile solid-state storage devices, and various storage media that can store program codes.

[0121] Although the present application is disclosed as above, the present application is not limited to this. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, and the protection scope of the present application should be defined by the scope defined in the claims.

Claims

1. A method for measuring the self-heating effect of a device, characterized in that, The method is executed based on a self-heating effect measuring device, the self-heating effect measuring device comprises a resistance thermosensitive element, and the resistance thermosensitive element is used to be arranged adjacent to a to-be-measured heat generating element of a to-be-measured device; the method comprises the following steps: In the case that different working voltages are applied to the to-be-measured device and a constant voltage is applied to the self-heating effect measuring device, a plurality of target resistance values of the resistance thermosensitive element adjacent to the to-be-measured heat generating element are acquired; Based on the conversion relationship between resistance and temperature, the plurality of target resistance values are temperature-converted to obtain a plurality of target temperature variables; According to the target temperature variables and the constant voltage, thermal resistance calculation is performed to obtain a target thermal resistance parameter of the to-be-measured device.

2. The device self-heating effect measurement method according to claim 1, characterized in that, The constant voltage is 0.01V-0.08V.

3. The device self-heating effect measurement method according to claim 1, characterized in that, The self-heating effect measuring device comprises a plurality of resistance thermosensitive elements, and in the self-heating effect measuring process, the plurality of resistance thermosensitive elements are arrayed around the periphery of the to-be-measured device.

4. The device self-heating effect measurement method according to claim 1, characterized in that, In the self-heating effect measuring process, the critical distance between the resistance thermosensitive element and the adjacent to-be-measured heat generating element is less than or equal to 1μm, and the critical distance is the upper limit of the distance between the resistance thermosensitive element and the to-be-measured heat generating element.

5. The method of self-heating effect measurement of a device according to any one of claims 1 to 4, characterized in that, The temperature conversion of the plurality of target resistance values based on the conversion relationship between resistance and temperature to obtain a plurality of target temperature variables comprises the following steps: A reference resistance value and a resistance temperature coefficient of the resistance thermosensitive element are acquired; the resistance temperature coefficient is obtained based on the resistance temperature characteristic curve of the resistance thermosensitive element; According to the plurality of target resistance values and the reference resistance value, a plurality of target resistance ratio values between the plurality of target resistance values and the reference resistance value are determined; Based on the resistance temperature coefficient, the plurality of target resistance ratio values are temperature-converted to obtain the target temperature variables corresponding to the plurality of target resistance ratio values respectively.

6. The device self-heating effect measurement method according to any one of claims 1 to 4, characterized in that, The thermal resistance calculation according to the target temperature variables and the constant voltage to obtain the target thermal resistance parameter of the to-be-measured device comprises the following steps: A plurality of target working currents of the self-heating effect measuring device are acquired; the plurality of target working currents correspond to the plurality of target resistance values one by one; According to the target working current and the constant voltage, a target working power of the self-heating effect measuring device is determined; Based on the corresponding relationship among power, temperature variable and thermal resistance parameter, the target thermal resistance parameters corresponding to the plurality of target working powers and the plurality of target temperature variables are determined.

7. The device self-heating effect measurement method according to any one of claims 1 to 4, characterized in that, The to-be-measured heat generating element is a layer of thermistor material.

8. The method of self-heating effect measurement of a device according to any one of claims 1 to 4, characterized in that, The to-be-measured device comprises at least one of a temperature sensitive device and a temperature sensitive circuit.

9. The method of self-heating effect measurement of a device according to any one of claims 1 to 4, characterized in that, The to-be-measured device comprises a plurality of first metal wiring layers, and the first metal wiring layers are electrically connected with the to-be-measured heat generating element; the self-heating effect measuring device comprises a plurality of second metal wiring layers, and the second metal wiring layers are electrically connected with the resistance thermosensitive element; In the self-heating effect measuring process, the first metal wiring layers are arranged adjacent to the second metal wiring layers.

10. A device for measuring the self-heating effect of a device, characterized in that, The method is executed based on a self-heating effect measuring device, the self-heating effect measuring device comprises a resistance thermosensitive element, and the resistance thermosensitive element is used to be arranged adjacent to a to-be-measured heat generating element of a to-be-measured device; the device comprises: The data acquisition module is configured to acquire a plurality of target resistance values of the resistance thermosensitive element adjacent to the to-be-tested heating device under the condition that different working voltages are applied to the to-be-tested device and a constant voltage is applied to the self-heating effect measurement device. The temperature conversion module is configured to perform temperature conversion on the plurality of target resistance values based on a conversion relationship between resistance and temperature to obtain a plurality of target temperature variables. The thermal resistance calculation module is configured to perform thermal resistance calculation according to the target temperature variables and the constant voltage to obtain a target thermal resistance parameter of the to-be-tested device.

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