Vertical reaction apparatus

Abstract

The present disclosure provides a vertical reaction apparatus. The vertical reaction apparatus includes a boat, a heat collection assembly, and a heat exchange unit. The boat is disposed in / out of a furnace tube at a boat loading / unloading area corresponding to a furnace opening. The heat collection assembly, which is disposed adjacent to the furnace opening, includes a heat radiation reflection member and a focusing lens member disposed at opposite sides of the boat loading / unloading area, respectively. The heat radiation reflection member reflects received heat radiation energy to the focusing lens member. The focusing lens member is configured to focus and emit heat radiation energy received from the boat loading / unloading area. The heat exchange unit is in heat exchange cooperation with the focusing lens member to absorb heat radiation energy emitted from the focusing lens member. The focusing lens member receives heat radiation energy directly incident on its surface and heat radiation energy reflected to its surface, and the heat radiation energy is absorbed by the heat exchange unit to reduce the temperature of the boat loading / unloading area, thereby avoiding the reduction of the service life of internal components of the boat loading / unloading area due to high temperature.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to vertical reaction apparatus. Background Technology

[0002] Vertical furnace equipment is typically used for high-temperature processes reaching thousands of degrees Celsius. When the process ends and the wafer descends into the wafer loading / unloading chamber along with the wafer boat, a large amount of heat carried by the boat and wafer radiates into the chamber, causing a rapid increase in temperature within the chamber and accelerating the aging of other components. Furthermore, if the heat is not dissipated quickly, the wafer cooling time will inevitably be prolonged, leading to a decrease in equipment yield. Therefore, accelerating heat dissipation in the wafer loading / unloading chamber to extend the lifespan of other components and improve equipment yield has become a pressing technical problem for those skilled in the art. Summary of the Invention

[0003] In view of the shortcomings of the prior art described above, the purpose of this disclosure is to provide a vertical reaction apparatus to solve the problems in the related art.

[0004] The first aspect of this disclosure provides a vertical reaction apparatus, comprising:

[0005] The crystal boat is installed in the crystal boat loading and unloading area corresponding to the furnace opening, which can enter / exit the furnace tube;

[0006] A heat collection assembly, disposed adjacent to the furnace opening, includes a heat radiation reflector and a focusing and transmitting element respectively disposed on opposite sides of the crystal boat loading and unloading area; the heat radiation reflector is configured to reflect the received heat radiation energy to the focusing and transmitting element; the focusing and transmitting element is configured to focus and emit the heat radiation energy received from one side of the crystal boat loading and unloading area.

[0007] The heat exchange unit cooperates with the focusing and transmitting element to absorb the thermal radiation energy emitted by the focusing and transmitting element.

[0008] In an embodiment of the first aspect, the reflectivity of the thermal radiation reflector is dynamically adjustable, and / or the transmittance of the focusing transmission element is dynamically adjustable.

[0009] In an embodiment of the first aspect, the heat collection assembly further includes a heat radiation guiding unit; the heat radiation guiding unit is formed with a heat radiation guiding cavity communicating and cooperating with the focusing position of the focusing transmission element, so as to receive and guide the heat radiation energy emitted by the focusing transmission element; the heat radiation guiding cavity is in heat exchange cooperation with the heat exchange unit.

[0010] In an embodiment of the first aspect, the tail end of the thermal radiation guiding cavity is formed with a tortuous heat trapping section.

[0011] In an embodiment of the first aspect, the heat trapping section is configured to have at least one of a straight, broken, or curved vertical cross-section; and / or, the heat trapping section has an upward section.

[0012] In an embodiment of the first aspect, a heat measurement instrument is disposed near the heat collection assembly to monitor the heat radiated from the wafer and the crystal boat.

[0013] In an embodiment of the first aspect, the thermal radiation guiding cavity is provided with a guiding component for guiding the thermal radiation energy entering the thermal radiation guiding cavity to be transmitted to the end along the extension direction of the thermal radiation guiding cavity.

[0014] In a first aspect embodiment, the guiding component includes:

[0015] Multiple guide elements are spaced apart on the cavity wall along the direction of penetration into the thermal radiation guiding cavity, and their positions cooperate to form a guiding path for thermal radiation; and / or,

[0016] A thermal radiation guiding layer is disposed on at least a portion of the cavity wall of the thermal radiation guiding cavity.

[0017] In an embodiment of the first aspect, the horizontal cross-section of the thermal radiation reflector is configured to include an arc shape with the arc opening facing the crystal boat, and the thermal radiation reflector has a diffuse reflection portion protruding from its center in a direction close to the crystal boat.

[0018] In an embodiment of the first aspect, the diffuse reflective portion is collinear with the crystal boat and the focusing transmission element.

[0019] As described above, this disclosure provides a vertical reaction apparatus. The vertical reaction apparatus includes a wafer boat, a heat collection assembly, and a heat exchange unit. The wafer boat is positioned in the wafer boat loading / unloading area corresponding to the furnace opening, allowing it to enter / exit the furnace tube. The heat collection assembly, adjacent to the furnace opening, includes a heat radiation reflector and a focusing transmission element respectively disposed on opposite sides of the wafer boat loading / unloading area. The heat radiation reflector reflects received heat radiation energy to the focusing transmission element. The focusing transmission element is configured to focus and emit the heat radiation energy received from the wafer boat loading / unloading area. The heat exchange unit cooperates with the focusing transmission element in a heat exchange manner to absorb the heat radiation energy emitted by the focusing transmission element. This disclosure, through the oppositely disposed heat radiation reflector and focusing transmission element, allows the focusing transmission element to receive heat radiation energy directly incident on its surface and reflected to its surface, which is then absorbed by the heat exchange unit. This achieves heat collection within the wafer loading / unloading chamber, reducing the temperature of the wafer loading / unloading chamber, thereby preventing other components within the wafer loading / unloading chamber from experiencing reduced service life due to high temperatures, accelerating wafer cooling, and increasing equipment yield. Attached Figure Description

[0020] Figure 1 The diagram shown is a structural schematic of a vertical reaction apparatus according to an embodiment of this disclosure.

[0021] Figure 2 The information presented in this disclosure is as follows. Figure 1 A cross-sectional view of the wafer loading / unloading bay in the example.

[0022] Figure 3 The diagram shown is a cross-sectional view of a wafer loading / unloading bay according to another embodiment of this disclosure.

[0023] Figure 4 The diagram shown is a structural schematic of a vertical reaction apparatus according to another embodiment of this disclosure.

[0024] Figure 5 The information presented in this disclosure is as follows. Figure 4 A cross-sectional schematic diagram of the vertical reaction apparatus in the example.

[0025] Figure 6 The diagram shown is a schematic representation of the structure of a thermal radiation guiding unit in one embodiment of this disclosure.

[0026] Figure 7 The diagram shown is a structural schematic of a thermal radiation guiding unit in another embodiment of this disclosure.

[0027] Figure 8 The diagram shown is a structural schematic of a thermal radiation guiding unit in another embodiment of this disclosure.

[0028] Reference numerals: 100, Vertical reaction equipment; 110, Furnace tube; 1101, Reaction chamber; 1102, Furnace opening; 120, Wafer loading / unloading bin; 130, Wafer boat; 131, Sealing section; 140, Heat collection assembly; 141, Heat radiation reflector; 1411, Dispersive reflector; 142, Focusing and transmitting component; 143, Heat radiation guiding unit; 1431, Heat radiation guiding cavity; 1432, Guiding assembly; 14321, First guide; 14322, Second guide; 14323, Third guide; 1433, Heat trapping section; 14331, Lifting section; 14332, Turning section; 150, Heat exchange unit. Detailed Implementation

[0029] The following specific examples illustrate the implementation of this disclosure. Those skilled in the art can easily understand other advantages and effects of this disclosure from the information disclosed herein. This disclosure can also be implemented or applied through other different specific embodiments, and various details in this disclosure can be modified or changed according to different viewpoints and application modules without departing from the spirit of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be combined with each other.

[0030] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this disclosure pertains can readily implement it. This disclosure may be embodied in many different forms and is not limited to the embodiments described herein.

[0031] In this disclosure, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic represented in connection with that embodiment or example is included in at least one embodiment or example of this disclosure. Furthermore, the specific features, structures, materials, or characteristics represented may be combined in any suitable manner in any one or a group of embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples represented in this disclosure, as well as the features of those different embodiments or examples.

[0032] Furthermore, the terms "first" and "second" are used for illustrative purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the representation of this disclosure, "a set" means two or more, unless otherwise explicitly specified.

[0033] Although not explicitly defined, all terms, including technical and scientific terms used herein, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries shall be further interpreted as having a meaning consistent with the relevant technical literature and the message of the present disclosure, and shall not be over-interpreted as having an ideal or overly formulaic meaning unless otherwise defined.

[0034] Vertical reaction equipment is a crucial piece of equipment in semiconductor manufacturing, primarily used for material deposition, oxidation, doping, or thermal annealing of wafers at high temperatures. In addition to front-end processes (FEOL), vertical reaction equipment is increasingly used in back-end processes (BEOL) of advanced packaging technologies.

[0035] As described in the background section, when the wafer is first lowered into the wafer loading / unloading chamber along with the wafer boat, its temperature is high. A large amount of heat is radiated into the wafer loading / unloading chamber, causing a rapid increase in temperature within a short period. This accelerates the aging of other components within the wafer loading / unloading chamber, and the accumulation of heat in the wafer loading / unloading chamber leads to slow wafer cooling, resulting in a decrease in equipment throughput. Therefore, how to extend the service life of other components within the wafer loading / unloading chamber and improve equipment turnover rate has become a technical problem urgently needing to be solved by those skilled in the art.

[0036] The inventors attempted to place reflectors and cooling elements only on the two opposing cavity walls of the wafer loading / unloading bay, so that the thermal radiation energy radiated by the cooling element would be directionally reflected by the reflectors to the surface of the cooling element, thus completing the absorption of the thermal radiation energy. However, in actual use, it was found that this arrangement easily resulted in only a small portion of the thermal radiation energy reflected by the reflectors reaching and being absorbed by the cooling element. Furthermore, in this method, the radiative heat transfer process was prone to interfering with or being interfered with by surrounding components, leading to a decrease in the collection efficiency of the thermal radiation energy radiated by the cooling element.

[0037] To address the aforementioned issues, this disclosure addresses the problem by using a thermal radiation reflector and a focusing transmission element arranged opposite to each other within the wafer loading / unloading bay. The focusing transmission element receives thermal radiation energy directly hitting its surface and that reflected to its surface by the thermal radiation reflector, and focuses the received thermal radiation energy onto the thermal radiation guiding unit. This achieves heat collection within the wafer loading / unloading bay, preventing other components within the bay from experiencing reduced service life due to high temperatures.

[0038] Figure 1 The diagram shown is a structural schematic of a vertical reaction apparatus according to an embodiment of this disclosure. Figure 1 In the example, the vertical reaction apparatus 100 includes a vertically mounted furnace tube 110. The furnace tube 110 includes a reaction chamber 1101 for performing a process, with an external heating element such as a resistance heater or other type of heating method, and various process gases can be introduced into the interior to heat and react the wafers entering therein. Exemplarily, the bottom of the furnace tube 110 has a furnace opening 1102 communicating with the reaction chamber 1101, and the furnace opening 1102 communicating with a wafer loading / unloading bin 120 (such as...). Figure 1 (As shown by the dashed line). Figure 1 As shown, the wafer loading / unloading bin 120 is located below the furnace tube 110 and can be connected to the reaction chamber 1101 via the furnace opening 1102. The furnace tube 110 is made of quartz or silicon carbide.

[0039] Exemplarily, the wafer loading / unloading bin 120 accommodates a wafer boat 130, which carries multiple wafers spaced vertically apart, the wafers being horizontally positioned on the wafer boat 130. Typically, the wafer boat 130 can be made of high-purity quartz or silicon carbide to withstand high temperatures and not react with process gases. The wafer boat 130 is positioned in a wafer boat loading / unloading area below the furnace opening 1102, allowing it to enter / exit the furnace tube 110. For example, the wafer boat 130 is driven to connect to a lifting mechanism (not shown), configured to carry the wafer boat 130 up / down, allowing it to rise into the reaction chamber 1101 of the furnace tube 110 for processing, and to descend from the reaction chamber 1101 to be removed. Exemplarily, the driving mechanism can be implemented as a lead screw or a telescopic cylinder, etc. Preferably, the lifting mechanism is implemented as a lead screw, which, due to its self-locking property, can prevent the crystal boat 130 from descending due to power loss.

[0040] For example, the bottom of the wafer boat 130 is provided with a sealing part 131, which is configured to seal the furnace opening 1102 after the wafer boat 130 enters the reaction chamber 1101, thereby isolating the reaction chamber 1101 from the wafer loading and unloading bin 120. The side of the sealing part 131 facing the furnace opening 1102 is provided with a sealing structure, such as a sealing gasket, to improve the sealing performance of the furnace tube 110 and prevent heat from the furnace tube 110 from being transferred to the wafer loading and unloading bin 120 during processing.

[0041] exist Figure 1 In this example, the wafer loading / unloading bay 120 is further provided with a heat collection assembly 140 adjacent to the furnace opening 1102. Exemplarily, the heat collection assembly 140 includes a heat radiation reflector 141 and a focusing and transmitting element 142 respectively disposed on opposite sides of the wafer loading / unloading area. The heat radiation reflector 141 reflects the received heat radiation energy to the focusing and transmitting element 142. The focusing and transmitting element 142 is configured to focus and emit the heat radiation energy received from the wafer loading / unloading area. It should be noted that the space between the focusing and transmitting element 142 and the heat radiation reflector 141 allows the wafer boat 130 to enter and exit the reaction chamber 1101.

[0042] The vertical reaction apparatus 100 further includes a heat exchange unit 150. The heat exchange unit 150 engages with the focusing and transmitting element 142 to absorb the thermal radiation energy emitted by the focusing and transmitting element 142. For example, the heat exchange unit 150 and the focusing and transmitting element 142 are spaced apart, so that the thermal radiation energy focused by the focusing and transmitting element 142 is directed onto the surface of the heat exchange unit 150, thereby achieving the absorption of thermal radiation energy by the heat exchange unit 150. In other embodiments, the heat exchange unit 150 is attached to the surface of the focusing and transmitting element 142 that emits thermal radiation energy.

[0043] Exemplarily, the heat exchange unit 150 includes a heat exchange chamber / pipe, within which a circulating heat-absorbing medium, such as water, is provided. It is understood that the circulating medium absorbs the heat radiation energy within the heat radiation guiding unit 143. In other embodiments, the heat exchange unit 150 is equipped with air-cooling components for heat dissipation. It should be noted that the heat exchange unit 150 can be located inside or outside the wafer loading / unloading bin 120, depending on actual needs. If the heat exchange medium is water, it is preferable to locate it outside the wafer loading / unloading bin 120.

[0044] For example, the heat collection component 140 is positioned close to the furnace opening 1102. It is understood that the temperature of the wafer boat 130 is high when it first emerges from the furnace opening 1102, and the temperature decreases as the exposure time increases. Therefore, when the wafer boat 130 first emerges from the furnace opening 1102, the heat collection component 140 can directly collect the thermal radiation energy of the high-temperature wafer boat 130, avoiding the situation where the high-temperature thermal radiation energy is not collected and transferred to the wafer loading / unloading bin 120 due to a large distance between the heat collection component 140 and the furnace opening 1102. Therefore, by timely collecting the heat radiated from the wafer boat 130 and the wafer, it helps to quickly reduce the temperature of the wafer loading / unloading bin 120.

[0045] Please refer to the following: Figure 1 and Figure 2 . Figure 2 The information presented in this disclosure is as follows. Figure 1 A cross-sectional view of the wafer loading / unloading bay in the example.

[0046] exist Figure 1 and Figure 2In this configuration, the reflective surface of the thermal radiation reflector 141 faces the crystal boat 130 to receive and reflect thermal radiation energy. For example, the reflective surface can be the surface of an aluminum plate or a reflective coating made of materials such as graphene or titanium dioxide coated on the surface of the thermal radiation reflector 141. In some examples, the reflectivity of the thermal radiation reflector 141 is dynamically adjustable. For instance, materials with thermochromic properties, such as vanadium oxide or tungsten oxide, can be added to the reflective layer, and / or electrochromic materials can be added, or other methods can be used to achieve dynamic adjustment of the reflector's reflectivity. The specific materials selected can be determined as needed, for example, based on the critical transition temperature to be set, and are not strictly limited in this regard. From the perspective of simplifying the component structure, the use of thermochromic materials is preferred. For example, a reflector with added thermochromic materials is nearly transparent at low temperatures, with very low reflectivity and essentially no reflective effect. When the temperature of its area rises to the critical point of the color-changing temperature, the reflector becomes opaque, and the reflectivity increases significantly, thereby effectively collecting heat. Therefore, when the wafer is transferred from outside the vertical reaction equipment 100 to the wafer boat 130 in the wafer loading / unloading bin 120 and passes through the heat collection component 140 before finally entering the reaction chamber 1101, the surface heat will not be captured by the heat collection component 140, thus maintaining the temperature at a preset level and shortening the preheating time in the reaction chamber 1101 (the wafer may be preheated or have residual heat from other processes before entering the vertical furnace, and the temperature of the next process it enters after completing the process in the vertical furnace may also be higher than the room temperature, so there is no need to cool the wafer down to room temperature). When the wafer completes the high-temperature process in the reaction chamber 1101 and descends through the heat collection component 140, the heat radiation reflector 141 becomes opaque at high temperature, significantly increasing the reflectivity and playing a good reflective role, which helps to rapidly cool the wafer and the wafer boat 130, and dynamically adjusts the temperature in the wafer loading / unloading bin 120 to the required level, which helps to reduce the equipment thermal budget and increase the equipment output.

[0047] For example, the shape of any vertical cross-section of the reflective surface of the thermal radiation reflector 141 is a straight line. It is understood that the thermal radiation reflector 141 can reflect the received thermal radiation energy horizontally to the focusing transmission element 142 as much as possible, thereby further improving the collection efficiency of thermal radiation energy.

[0048] Exemplarily, the thermal radiation reflector 141 is configured as a reflector, and its horizontal cross-section is arc-shaped, with the arc opening of the thermal radiation reflector 141 facing the wafer boat 130 and the focusing transmission element 142. It is understood that the thermal radiation reflector 141 can reflect the thermal radiation energy radiated from the side of the wafer boat 130 facing away from the focusing transmission element 142 back onto the focusing transmission element 142, preventing the thermal radiation energy radiated from the side of the wafer boat 130 facing away from the focusing transmission element 142 from accumulating in the wafer loading / unloading bin 120 due to non-absorption.

[0049] Preferably, the central angle of the thermal radiation reflector 141 is less than 180 degrees. Those skilled in the art will understand that this avoids thermal radiation energy being reflected between the crystal boat 130 and the thermal radiation reflector 141 due to an excessively large central angle, thereby preventing a reduction in the efficiency of thermal radiation collection due to the inability to direct the energy towards the focusing and transmitting element 142.

[0050] For example, the focusing transmission element 142 is implemented as a Fresnel lens (the figure is only a simplified schematic diagram). It is understood that a Fresnel lens is a specially designed optical lens that can be used to change the direction of light propagation, thereby achieving collimation, diffusion, or focusing of light.

[0051] Similarly, the transmittance of the focusing transmission element 142 can also be dynamically adjusted through adjustments to materials and / or structure. For example, by incorporating materials with thermochromic and / or electrochromic properties, its combination with the thermal radiation reflector 141 will further optimize temperature control within the wafer loading / unloading bay 120. In another example, the dynamically adjustable reflectance of the thermal radiation reflector 141 and the dynamically adjustable transmittance of the focusing transmission element 142 can be used simultaneously, or one can be selected, without strict limitations.

[0052] by Figure 1 and Figure 2 For illustrative purposes, when the crystal boat 130 is moved out of the reaction chamber 1101 through the furnace opening 1102, the thermal radiation energy of the side of the crystal boat 130 facing the focusing transmission element 142 is directly directed to the focusing transmission element 142. The thermal radiation energy of the side of the crystal boat 130 facing away from the focusing transmission element 142 is first directed to the thermal radiation reflector 141, and then reflected by the thermal radiation reflector 141 to the focusing transmission element 142. Finally, the focusing transmission element 142 focuses the received thermal radiation energy and radiates it to the heat exchange unit 150.

[0053] By using the thermal radiation reflector 141 and the focusing and transmitting element 142 arranged opposite to each other, the focusing and transmitting element 142 can receive thermal radiation energy that is directly hitting its surface and reflected to its surface by the thermal radiation reflector 141, and then focus the received thermal radiation energy to radiate it to the heat exchange unit 150, so as to collect heat in the wafer loading and unloading bin 120 and prevent other equipment in the wafer loading and unloading bin 120 from having their service life reduced due to high temperature.

[0054] Figure 3 The image shown is a cross-sectional schematic diagram of a wafer loading / unloading bay according to another embodiment of this disclosure. Figure 3 In the example, compared to Figure 2 In this embodiment, the thermal radiation reflector 141 has a protruding diffuser 1411 at its center, protruding from the center towards the wafer carrier 130. Preferably, the diffuser 1411 is collinear with the wafer carrier 130 and the focusing transmission element 142. Therefore, when thermal radiation energy from the wafer carrier 130 is directed toward the diffuser 1411, the thermal radiation energy can be reflected by the diffuser 1411 and directed toward the focusing transmission element 142 along a first path. For example, the first path is: wafer carrier 130 → diffuser 1411 → area of ​​the thermal radiation reflector 141 (excluding the diffuser 1411 area) → focusing transmission element 142. The diffuser 1411 prevents thermal radiation energy from being reflected back onto the wafer carrier 130 by the thermal radiation reflector 141, thus improving the efficiency of thermal radiation energy collection and reducing the temperature of the wafer loading / unloading bay 120.

[0055] Preferably, the connection between the diffused reflection portion 1411 and the non-diffuse reflection portion 1411 on the thermal radiation reflector 141 is rounded so that the thermal radiation energy radiated to the connection can be reflected, thereby further improving the collection efficiency of thermal radiation energy.

[0056] In other embodiments, the dispersed reflective portion 1411 may also be implemented as a plurality of such portions, which are arranged at intervals along the extending direction of the thermal radiation reflector 141.

[0057] For example, the thermal radiation energy received by the focusing transmission element 142 is implemented to also include thermal radiation energy directly radiated from the surface of the crystal boat 130.

[0058] Exemplarily, the thermal radiation energy received by the focusing transmission element 142 is implemented to also include thermal radiation energy reflected from the inner wall of the wafer loading / unloading bin 120. For example, the inner wall of the wafer loading / unloading bin 120 is implemented as a reflective surface. That is, the thermal radiation energy radiated by the wafer boat 130 is directed towards the inner wall of the wafer loading / unloading bin 120, reflected by the inner wall of the wafer loading / unloading bin 120, and directed towards the focusing transmission element 142.

[0059] It should be noted that when the crystal boat 130 is removed from the reaction chamber 1101, it needs to be moved downwards until its top is completely removed from the space between the thermal radiation reflector 141 and the focusing and transmitting element 142, so as to facilitate the subsequent loading and unloading of wafers.

[0060] In the vertical reaction apparatus 100, monitoring the process conditions inside the reaction chamber 1101, especially whether the temperature meets the process requirements, is a challenge. Because the inside of the reaction chamber 1101 is typically at temperatures exceeding 1000 degrees Celsius, temperature control devices such as thermocouples installed inside the reaction chamber 1101 are easily damaged in the high-temperature environment. Furthermore, disassembling thermocouples is cumbersome, and it is difficult to detect thermocouple malfunctions in a timely manner. Therefore, existing methods involve setting monitoring holes on the inner wall of the reaction chamber 1101 to expose internal gases and other monitored objects to monitor the internal reaction conditions. However, setting monitoring holes affects the heat and gas distribution inside the reaction chamber 1101 and may cause damage to the reaction chamber 1101. Therefore, in a preferred example provided by this invention, several heat measuring instruments (not shown in the figure) are set near the heat collection assembly 140, for example, a thermometer and / or calorimeter are set near the light-emitting side of the focusing transmission element 142 to monitor the heat radiated from the wafer and the crystal boat 130. Because the same process is performed on the same product in the same vertical furnace, theoretically the heat budget for each batch is the same. This includes the fact that after the process of each batch of wafers is completed, the heat carried by the wafer boat 130 and the wafer and ultimately collected by the heat collection component 140 (reflected in the temperature on the corresponding component) should also be substantially the same. Therefore, setting up a temperature sensor and / or calorimeter to monitor the temperature and / or heat at the same measurement node can provide effective supplementary data for process monitoring, helping to detect process defects in a timely manner and take corrective measures as soon as possible to avoid greater losses. This measurement is performed within the wafer loading / unloading bay 120, which does not affect the process, and the relatively low temperature environment can ensure the long-term stable use of the measuring instrument, improve monitoring accuracy, and reduce monitoring costs. Moreover, more than one heat measuring instrument can be set up along the heat radiation path, for example, at least one near the heat radiation reflector 141 and the focusing transmission component 142. By comparing the heat radiated at different locations, it can not only monitor the process but also monitor the heat radiation path itself.

[0061] Figure 4 The diagram shown is a structural schematic of a vertical reaction apparatus according to another embodiment of this disclosure. Figure 5 The information presented in this disclosure is as follows. Figure 4 A cross-sectional schematic diagram of the vertical reaction apparatus in the example. Figure 4 and Figure 5 In the example, compared to Figure 1 In this embodiment, the heat collection assembly 140 further includes a heat radiation guiding unit 143.

[0062] For example, the heat radiation guiding unit 143 is disposed between the focusing and transmitting element 142 and the heat exchange unit 150, and heat exchange cooperation is performed with the focusing and transmitting element 142. For example, the heat exchange unit 150 is disposed in close contact with the heat radiation guiding unit 143 to absorb heat within the heat radiation guiding unit 143.

[0063] Depend on Figure 5 It can be seen that the middle part of the heat radiation reflector 141 can also be formed with the same... Figure 3 The same diffuse reflector 1411 as in the example, and functions with Figure 3 The examples are the same, so they will not be repeated here.

[0064] exist Figure 4 In the example, the thermal radiation guiding unit 143 is formed with a thermal radiation guiding cavity 1431 that communicates and mates with the focusing position of the focusing transmission element 142 to receive and guide the thermal radiation energy emitted by the focusing transmission element 142. For example, the inlet of the thermal radiation guiding cavity 1431 is oriented to mate with the focusing transmission element 142 to receive the thermal radiation energy emitted from the focusing transmission element 142.

[0065] Exemplarily, a guiding component 1432 is provided in the thermal radiation guiding cavity 1431. The guiding component 1432 guides the thermal radiation energy entering the thermal radiation guiding cavity 1431 to be transmitted to its end along the extension direction of the thermal radiation guiding cavity 1431. Exemplarily, the guiding component 1432 includes a plurality of guiding members, which are spaced apart on the cavity wall along the direction of penetration into the thermal radiation guiding cavity 1431, and are positioned and arranged in coordination with each other to form a guiding path for thermal radiation.

[0066] by Figure 4 The examples shown in the text are illustrated below. Figure 4In this example, the guiding assembly 1432 is implemented as including a first guide 14321, a second guide 14322, and a third guide 14323. The first guide 14321 is obliquely disposed at the inlet to receive thermal radiation energy focused by the focusing transmission element 142 and directed into the inlet. The second guide 14322 and the third guide 14323 are disposed opposite each other on the cavity wall of the thermal radiation guiding cavity 1431 to receive thermal radiation energy emitted from the first guide 14321 and to reflect the thermal radiation energy between the second guide 14322 and the third guide 14323 along the extension direction of the thermal radiation guiding cavity 1431 to the end of the thermal radiation guiding cavity 1431.

[0067] by Figure 4 For the purposes of this specific embodiment, the second guide 14322 is disposed on the wall surface of the heat radiation guiding cavity 1431 that is in contact with the heat exchange unit 150, and the third guide 14323 is disposed on the wall surface of the heat radiation guiding cavity 1431 opposite to the second guide 14322. The first guide 14321 is located between the second guide 14322 and the third guide 14323.

[0068] For example, the first guide 14321, the second guide 14322 and the third guide 14323 are all implemented as reflectors and disposed on the cavity wall of the thermal radiation guiding cavity 1431.

[0069] It should be noted that the first guide 14321 is configured to direct received thermal radiation energy toward the second guide 14322 or the third guide 14323, so that the thermal radiation energy entering the thermal radiation guiding cavity 1431 can be reflected between the second guide 14322 and the third guide 14323 to the bottom of the cavity. It is understood that the setting parameters of the first guide 14321 include, but are not limited to, position and angle, and the specific setting method can be adjusted according to actual needs.

[0070] In other embodiments, the first guide 14321 may be integrated with the second guide 14322 to reduce production costs and assembly difficulty. For example, the first guide 14321 may be implemented as a portion of the top of the second guide 14322 that is angled towards the third guide 14323.

[0071] In other embodiments, the first guide 14321 is pivotally hinged to the top of the second guide 14322. For example, the first guide 14321 is driven to connect to a servo motor (located outside the thermal radiation guiding unit 143). Therefore, when the wafer boat 130 descends to the point where its top is completely removed between the thermal radiation reflector 141 and the focusing transmission element 142, the first guide 14321 rotates to disconnect the thermal radiation guiding cavity 1431 from the inlet, thereby preventing thermal radiation energy in the thermal radiation guiding cavity 1431 from overflowing from the inlet into the wafer loading / unloading bay 120.

[0072] In other embodiments, the first guide 14321, the second guide 14322 and the third guide 14323 may also be implemented as reflective surfaces, such as graphene coating, titanium dioxide coating, etc., applied to the cavity wall of the thermal radiation guiding cavity 1431.

[0073] In other embodiments, the guiding component 1432 is implemented as a thermal radiation guiding layer, covering at least a portion of the cavity wall of the thermal radiation guiding cavity 1431.

[0074] For example, Figure 4 In the example, the bottom wall of the heat radiation guiding cavity 1431 is implemented as a heat-absorbing surface, such as a frosted surface or a matte surface, with black being the most preferred to improve heat absorption efficiency. Those skilled in the art will understand that the heat-absorbing surface effectively prevents the heat radiation energy reflected to the bottom wall from being reflected again and transmitted upwards along the heat radiation guiding cavity 1431, avoiding heat radiation energy escape and thus preventing heat backflow. Exemplarily, the portion of the sidewall of the heat radiation guiding cavity 1431 near the bottom wall is implemented as a heat-absorbing surface, thereby further improving the effect of preventing heat radiation energy backflow.

[0075] For example, the heat radiation guiding unit 143 is inserted into the heat exchange unit 150 at least at its bottom. It is understood that the bottom of the heat radiation guiding unit 143 is disposed in close contact with the heat exchange unit 150, thereby increasing the efficiency of the heat exchange unit 150 in absorbing heat radiation energy by increasing the contact area between the bottom of the heat radiation guiding unit 143 and the heat exchange unit 150.

[0076] In other embodiments, if the bottom wall of the heat radiation guiding cavity 1431 is not implemented as a heat absorption surface, the bottom of the heat radiation guiding unit 143 can also be inserted into the heat exchange unit 150.

[0077] Figure 6 The diagram shown is a structural schematic of a thermal radiation guiding unit according to an embodiment of this disclosure. Figure 6In the example, the thermal radiation guiding cavity 1431 includes a heat trapping section 1433 at the end for trapping the thermal radiation energy transmitted thereto.

[0078] For example, the heat-trapping section 1433 is configured with a vertical cross-section that is at least one of a straight line, a broken line, or a curve. Figure 6 In the example, the heat trapping section 1433 is configured with a straight vertical cross-section. For example... Figure 6 As shown by the dashed line, thermal radiation energy is transmitted along the extending direction of the thermal radiation guiding cavity 1431 and reflected by the bottom wall to the heat trapping part 1433. It should be noted that... Figure 6 In the example, the vertical sidewall at the end of the heat-trapping section 1433 is implemented as a heat-absorbing surface, such as a frosted surface or a matte surface. Those skilled in the art will understand that the heat-absorbing surface can effectively prevent the thermal radiation energy reflected to its surface from being reflected again and transmitted upwards along the thermal radiation guiding cavity 1431, avoiding the escape of thermal radiation energy and further preventing heat backflow.

[0079] It should be noted that the heat-trapping part 1433 extends in a direction opposite to the crystal boat 130, thereby avoiding any impact on the normal operation of the crystal boat 130. Figure 6 The images shown are for illustrative purposes only and are not intended to be limiting.

[0080] Figure 7 The diagram shown is a structural schematic of a thermal radiation guiding unit according to another embodiment of this disclosure. Figure 7 In the example, the heat trapping section 1433 is configured with a curved vertical cross-section. For example... Figure 7 As shown by the dashed line, thermal radiation energy is transmitted along the extending direction of the thermal radiation guiding cavity 1431 and is reflected by the wall surface to the heat trapping part 1433. It should be noted that... Figure 7 In this example, the end wall of the heat trapping section 1433 (i.e., the wall surface of the heat radiation guiding cavity 1431 that finally receives heat radiation energy) is implemented as a heat-absorbing surface, such as a frosted surface. Those skilled in the art will understand that the end wall surface can effectively prevent the heat radiation energy reflected to its surface from being reflected again and transmitted upwards along the heat radiation guiding cavity 1431, avoiding the escape of heat radiation energy and further preventing the backflow of heat radiation.

[0081] For example, Figure 7In the example, the vertical cross-section of the heat trapping section 1433 is implemented as an arc with the arc facing the furnace tube. The heat trapping section 1433 includes an upward section. The upward section has an upward part 14331 and a turning part 14332. It can be understood that, since thermal radiation heat has an upward flow tendency, the upward part 14331 can increase the difficulty of the reverse transmission of thermal radiation energy along the thermal radiation guiding cavity 1431 (the reverse transmission requires first downward and then upward). Secondly, the turning part 14332 can further increase the difficulty of the thermal radiation energy within the upward part 14331 escaping, thereby further avoiding the backflow of thermal radiation heat.

[0082] Figure 8 The diagram shown is a structural schematic of a thermal radiation guiding unit in another embodiment of this disclosure. Figure 8 In the example, the heat trapping section 1433 is configured with a vertical cross-section that is polygonal. For example... Figure 8 As shown by the dashed line, thermal radiation energy is transmitted along the extending direction of the thermal radiation guiding cavity 1431 and reflected by the bottom wall to the heat trapping part 1433. It should be noted that... Figure 8 In this example, the end wall of the heat trapping section 1433 (i.e., the wall surface of the heat radiation guiding cavity 1431 that finally receives heat radiation energy) is implemented as a heat-absorbing surface, such as a frosted surface or a matte surface. Those skilled in the art will understand that the end wall surface can effectively prevent the heat radiation energy reflected to its surface from being reflected again and transmitted upwards along the heat radiation guiding cavity 1431, avoiding the escape of heat radiation energy and further preventing the backflow of heat radiation.

[0083] For example, Figure 8 In the example, the vertical cross-section of the heat trapping section 1433 is implemented as a broken line shape with its opening facing the furnace tube 110. The heat trapping section 1433 includes an upward section. The upward section has an upward part 14331 and a turning part 14332, and the functions of the upward part 14331 and the turning part 14332 are as follows: Figure 5 The examples are the same, so they will not be repeated here.

[0084] For example, the heat exchange unit 150 is arranged along the height direction of the heat radiation guiding unit 143, and at least one side wall is disposed in contact with the side wall of the heat radiation guiding unit 143. In this way, when heat radiation energy enters the heat radiation guiding cavity 1431, the heat exchange unit 150 performs heat exchange, thereby reducing the temperature of the heat radiation guiding unit 143 and improving the heat exchange efficiency.

[0085] Preferably, in Figure 6 , Figure 7 and Figure 8In the example, at least the heat trapping part 1433 on the heat radiation guiding unit 143 is inserted into the heat exchange unit 150. It is understood that the heat trapping part 1433 is disposed in close contact with the heat exchange unit 150, thereby increasing the contact area between the heat trapping part 1433 and the heat exchange unit 150, thus improving the efficiency of the heat exchange unit 150 in absorbing thermal radiation energy.

[0086] In other embodiments, the heat trapping section 1433 is implemented as a curved or broken line with a connected vertical cross section, or a straight line and a broken line, or a curved and a straight line, or a curved, broken line and a straight line.

[0087] In summary, this disclosure provides a vertical reaction apparatus. The vertical reaction apparatus includes a crystal boat, a heat collection assembly, and a heat exchange unit. The crystal boat is disposed in a crystal boat loading / unloading area corresponding to the furnace opening, allowing it to enter / exit the furnace tube. The heat collection assembly is disposed adjacent to the furnace opening and includes a heat radiation reflector and a heat radiation guiding unit respectively disposed on opposite sides of the crystal boat loading / unloading area, and a focusing and transmitting element disposed between the heat radiation reflector and the heat radiation guiding unit. The heat radiation guiding unit forms a heat radiation guiding cavity extending towards the bottom of the wafer loading / unloading bay, and the inlet of the heat radiation guiding cavity is oriented in alignment with the heat radiation reflector. The focusing and transmitting element is configured to focus the heat radiation energy received from the crystal boat loading / unloading area onto the inlet of the heat radiation guiding cavity. The heat exchange unit heat-exchanges with the heat radiation guiding unit in the extending direction to absorb heat radiation energy. This disclosure enables the thermal radiation reflector and the focusing transmission element, which are arranged opposite to each other, to receive thermal radiation energy that is directly incident on their surface and reflected to their surface by the thermal radiation reflector. The received thermal radiation energy is then focused onto the thermal radiation guiding unit to collect heat within the wafer loading and unloading bay, thereby preventing other components within the wafer loading and unloading bay from having their service life reduced due to high temperatures.

[0088] The above embodiments are merely illustrative of the principles and effects of this disclosure and are not intended to limit this disclosure. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this disclosure. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this disclosure should still be covered by the protection scope of this disclosure.

Claims

1. A vertical reaction apparatus, characterized in that, The furnace tube includes a furnace opening at the bottom; the furnace opening is connected to a wafer loading / unloading bin; the vertical reaction equipment includes: The crystal boat is installed in the crystal boat loading and unloading area corresponding to the furnace opening, which can enter / exit the furnace tube; A heat collection assembly, disposed adjacent to the furnace opening, includes a heat radiation reflector and a focusing and transmitting element respectively disposed on opposite sides of the crystal boat loading and unloading area; the heat radiation reflector reflects the received heat radiation energy to the focusing and transmitting element; the focusing and transmitting element is configured to focus and emit the heat radiation energy received from the crystal boat loading and unloading area. The heat exchange unit cooperates with the focusing and transmitting element to absorb the thermal radiation energy emitted by the focusing and transmitting element.

2. The vertical reaction apparatus according to claim 1, characterized in that, The reflectivity of the thermal radiation reflector is dynamically adjustable; and / or, the transmittance of the focusing transmission element is dynamically adjustable.

3. The vertical reaction apparatus according to claim 1, characterized in that, The heat collection assembly further includes a heat radiation guiding unit; the heat radiation guiding unit forms a heat radiation guiding cavity that communicates and cooperates with the focusing position of the focusing transmission element, so as to receive and guide the heat radiation energy emitted by the focusing transmission element; the heat radiation guiding cavity cooperates with the heat exchange unit for heat exchange.

4. The vertical reaction apparatus according to claim 3, characterized in that, The tail end of the thermal radiation guiding cavity has a tortuous and extended heat trapping section.

5. The vertical reaction apparatus according to claim 4, characterized in that, The heat trapping section is configured such that its vertical cross-section is at least one of a straight line, a broken line, or a curve; and / or, the heat trapping section has an upward section.

6. The vertical reaction apparatus according to claim 1, characterized in that, A heat measurement instrument is installed near the heat collection component to monitor the heat radiated from the wafer and the crystal boat.

7. The vertical reaction apparatus according to claim 3, characterized in that, The thermal radiation guiding cavity is provided with a guiding component to guide the thermal radiation energy entering the thermal radiation guiding cavity to be transmitted to the end along the extension direction of the thermal radiation guiding cavity.

8. The vertical reaction apparatus according to claim 7, characterized in that, The boot component includes: Multiple guide elements are spaced apart on the cavity wall along the direction of penetration into the thermal radiation guiding cavity, and their positions cooperate to form a guiding path for thermal radiation; and / or, A thermal radiation guiding layer is disposed on at least a portion of the cavity wall of the thermal radiation guiding cavity.

9. The vertical reaction apparatus according to claim 1, characterized in that, The horizontal cross-section of the thermal radiation reflector is implemented as an arc shape including the arc opening facing the crystal boat, and the thermal radiation reflector has a diffused reflection portion protruding from the middle part along the direction close to the crystal boat.

10. The vertical reaction apparatus according to claim 9, characterized in that, The diffuse reflective element is on the same straight line as the crystal boat and the focusing and transmitting element.

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