Device and method for regulating element lattice occupation and interface potential barrier of mercury cadmium telluride p-on-n device

Abstract

The invention provides a mercury cadmium telluride p-on-n device element replacement occupation and interface potential barrier regulation and control device and method, and the device consists of a multi-temperature-zone constant temperature structure, a multi-section heating unit, a display and control unit, a sample bearing cavity, an integral supporting structure, a sample bearing cavity placement table, a supporting rod of the sample bearing cavity placement table and the like. The temperature gradient and the mercury partial pressure can be accurately controlled by adjusting the temperature, the temperature difference, the distance, the heating rate and the cooling rate of each constant-temperature area, the arsenic element in the tellurium-cadmium-mercury p-on-n device can be pushed to be uniformly diffused to a low-concentration area, the crystal lattice of the tellurium element is uniformly replaced, and p-type activation is completed; meanwhile, mutual diffusion of cadmium elements is promoted, a component gradient barrier structure is formed on the interface of the p-type layer and the n-type layer, and the purpose of restraining interface / surface electric leakage is achieved. According to the device and the method, batch heat treatment of tellurium-cadmium-mercury p-on-n devices can be simultaneously realized, the process efficiency is improved, the productivity is improved, and development and batch production of low-dark-current and high-quantum-efficiency infrared detectors are supported.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of optoelectronic devices, and particularly relates to a device element lattice site and interface barrier regulation device and method for a tellurium-cadmium-mercury p-on-n device, which can be used for developing and producing high-performance tellurium-cadmium-mercury infrared detectors. BACKGROUND

[0002] As a crucial sensing unit of photoelectric detection systems, infrared detectors are widely used in fields such as space early warning, weather forecasting, earth observation, deep space exploration, etc. At present, infrared detectors are developing towards high resolution, high sensitivity, high operating temperature, wide spectral response, etc., and therefore higher requirements are put forward for the performance of the devices. Since the band gap of tellurium-cadmium-mercury material is continuously adjustable in the entire infrared band, and the quantum efficiency is high and the dark current is small, the development and use of tellurium-cadmium-mercury detector technology has always occupied a dominant position in the infrared field.

[0003] Tellurium-cadmium-mercury devices mainly have n-on-p and p-on-n device structures. In the p-on-n device structure, N-type material is used as the absorption layer, and compared with P-type material, N-type material can realize lower concentration doping, so the minority carrier lifetime is longer, and the dark current is at least two orders of magnitude lower than that of conventional n-on-p devices, which has a significant advantage in performance. In the tellurium-cadmium-mercury p-on-n structure device, doping As element into the Te lattice site is a kind of p-type layer preparation technology that is widely used at present. For the As-doped junction process, regulating the uniform dispersion and replacement of As element by Te element is the key to realizing high p-type activation rate and high-quality pn junction preparation, and directly determines the performance of the device. At the same time, in order to reduce the dark current, it is necessary to effectively control the element interdiffusion between the cadmium telluride passivation layer on the surface of the material and the tellurium-cadmium-mercury material through heat treatment, and induce the construction of a component gradient barrier structure between the p-type layer and the n-type layer.

[0004] Traditional tellurium-cadmium-mercury material heat treatment adopts a single-temperature zone or a double-temperature zone system, and the temperature of the mercury source and the temperature difference of the sample are difficult to accurately regulate, which affects the diffusion of As element, and the temperature stability of the temperature zone is poor, the cooling rate is slow, and accurate temperature control cannot be realized during the cooling process, which affects the activation of As and the interface regulation. At the same time, the whole system often has the disadvantages of high cost, poor consistency, low repeatability, etc., and is not suitable for heat treatment of a large number of tellurium-cadmium-mercury devices, and the efficiency is low. SUMMARY

[0005] In order to solve the above problems of the prior art, the inventors have developed a device and a method for regulating the element lattice site and interface barrier of a mercury cadmium telluride p-on-n device. The device and the method can effectively realize the functions of As activation, junction zone promotion, damage and defect repair, interface barrier regulation, etc. of the mercury cadmium telluride p-on-n structure device. The present application simultaneously realizes the functions of As element diffusion, p-type activation, damage layer repair, electrical parameter adjustment and interface barrier regulation of the mercury cadmium telluride p-on-n structure in one device, and avoids the problem that the interdiffusion barrier layer of mercury cadmium telluride and cadmium telluride is too thick due to the long cooling time from high-temperature activation and damage repair to low-temperature electrical parameter regulation, thereby affecting the junction zone collection efficiency. The use of multi-section temperature control design can effectively control the temperature stability and uniformity of each temperature zone, and the number of constant temperature zones is greater than or equal to 3, while ensuring the stability and controllability of the temperature change rate. Further, a section of adjustable gap is ingeniously added between the high-temperature zone and the low-temperature zone, and the temperature gradient at the junction can be effectively controlled by adjusting the gap length to meet different temperature difference requirements.

[0006] The application discloses a device for regulating element lattice site and interface barrier of a mercury cadmium telluride p-on-n device, which comprises a box body, an integral structure carrier, a display and control unit, a power module and a working chamber body, wherein the box body provides a closed working space, protects the internal structure and reduces external interference; the power module provides stable power for all power-consuming components such as an annealing furnace with a multi-temperature-zone constant temperature structure, a heating unit, a positioning motor and the display and control unit; the display and control unit is used for setting and receiving user-set temperature, time, interval and other parameters; the display and control unit controls the heating power of the multi-temperature-zone constant temperature structure and the heating unit; the multi-temperature-zone constant temperature structure provides a regulatable multi-section temperature zone and forms a temperature gradient, and is a core temperature control component (including the annealing furnace) for regulating element lattice site and interface barrier; the low-temperature zone and the high-temperature zone are independent heating units, can be powered by the power module, and can be set with target temperatures to form a basic temperature gradient; if necessary, a middle-temperature zone can be arranged between the low-temperature zone and the high-temperature zone, the middle-temperature zone is located between the low-temperature zone and the high-temperature zone, the temperature gradient is refined, and a multi-section smooth transition of 'low temperature-middle temperature (constant temperature)-high temperature' is realized; the device has a hexagonal cross-section, a cavity is arranged in the middle, the cavities are horizontally aligned, the sample carrying cavities pass through the cavity, and the sample is ensured to be located in the core area of the temperature gradient; the high-temperature zone can be laterally slid, the interval with the low-temperature zone or the middle-temperature zone is adjusted to be 0.5cm-15cm, and then the temperature difference is changed; the temperature control precision of each constant temperature zone is within ±0.5℃, the constant temperature can be adjusted to be within a range of 200℃-600℃, the temperature difference from the high-temperature zone to the low-temperature zone can be adjusted to be within a range of 10℃-200℃, the distance from the high-temperature zone to the low-temperature zone can be adjusted to be within a range of 0.5cm-15cm, the heating rate of each constant temperature zone can be adjusted to be within a range of 10℃ / h-200℃ / h, and the cooling rate of each constant temperature zone can be adjusted to be within a range of 5℃ / h-80℃ / h. -4Torr, made of one or more of the following high-temperature resistant and mercury-corrosion-resistant materials: quartz, stainless steel, nickel-based alloys, silicon carbide, and boron nitride; features a connected multi-segment structure, each supporting liquid mercury and multiple mercury cadmium telluride (HCTM) p-on-n devices. Slopes or baffles separate the liquid mercury and the HCTM p-on-n devices to prevent direct flow of liquid mercury into the device placement area when horizontally placed. This multi-segment structure allows for the simultaneous processing of multiple HCTM p-on-n devices, improving efficiency and production capacity. It can be placed on a sample support stage and integrated into a multi-temperature zone isothermal structure. The heating unit is an independent unit that can be placed side-by-side, supplementing the heat source through power adjustment. Combined with the multi-temperature zone isothermal structure, it fine-tunes the temperature field, improving temperature control accuracy. The device allows for lateral displacement, and the distance between each heating unit can be adjusted for heat source replenishment and temperature control. The display and control unit can display the constant temperature zone temperature, heating unit power, running time, alarm status, etc. in real time, and can set and regulate parameters such as constant temperature zone temperature, heating unit power, heating rate, and cooling rate. This device can achieve precise control of temperature gradient and mercury partial pressure by adjusting the temperature, temperature difference, distance, heating rate, and cooling rate of each constant temperature zone. It can promote the uniform diffusion of arsenic in the mercury cadmium telluride p-on-n device to the low concentration region and uniformly replace the lattice sites of tellurium, completing p-type activation. At the same time, it promotes the interdiffusion of cadmium, forming a composition gradient barrier structure at the interface of the p-type layer and the n-type layer, thereby suppressing interface / surface leakage.

[0007] The working principle of this invention: Traditional single-temperature or dual-temperature heat treatment systems have a core defect: the cooling time from the high-temperature stage (activation, damage repair) to the low-temperature stage (electrical parameter control) is too long, which leads to excessive interdiffusion of elements between mercury cadmium telluride and the surface cadmium telluride passivation layer, forming an excessively thick barrier layer. This will significantly reduce the carrier collection efficiency of the device junction region, and thus affect the quantum efficiency of the infrared detector. This invention supports an adjustable cooling rate of 5℃ / h to 80℃ / h through multiple heating units. A reasonable cooling rate can be set according to process requirements (e.g., rapid cooling at 80℃ / h after high-temperature activation), shortening the transition time between high and low temperatures, avoiding excessive interdiffusion of elements, and achieving precise temperature control and rapid cooling. The adjustable gap between the high and low temperature zones and the segmented intermediate temperature zone design make the temperature change during cooling more gradual and controllable, reducing interface defects caused by sudden temperature changes. Simultaneously, it precisely controls the thickness of the barrier layer, ensuring junction collection efficiency and achieving fine-grained temperature gradient control. The temperature control accuracy of each isothermal zone reaches ±0.5℃, and the independent control of multiple heating units makes the temperature field distribution in each zone more uniform. This avoids problems such as uneven element diffusion and low activation efficiency caused by temperature fluctuations in traditional systems, and improves the consistency of device performance (such as reduced batch differences in dark current and quantum efficiency); the wide range of adjustable heating rate (10℃ / h~200℃ / h) and cooling rate (5℃ / h~80℃ / h) can adapt to the needs of different process stages; the adjustable gap (0~10cm) between high and low temperature zones and the guide rail movement design in the high temperature zone can precisely control the steepness of the temperature gradient by changing the gap width;

[0008] Beneficial technical effects of the present invention:

[0009] (1) This device improves device performance. By precisely controlling the temperature gradient and mercury partial pressure, it promotes the formation of a uniform compositional gradient barrier structure of cadmium at the interface between the p-type and n-type layers, effectively suppressing interface / surface leakage and significantly reducing the device's dark current, thus laying the foundation for high sensitivity of the infrared detector. It avoids the problem of excessive interdiffusion between mercury cadmium telluride and the cadmium telluride passivation layer caused by excessively long cooling time in traditional processes, precisely controlling the thickness of the interface barrier layer, ensuring the carrier collection efficiency of the junction region, and improving the quantum efficiency of the infrared detector. It promotes the uniform diffusion of arsenic to low-concentration regions and replaces the lattice sites of tellurium, achieving efficient and uniform activation of the p-type layer, and improving the consistency and stability of the device's electrical performance.

[0010] (2) Improve process efficiency and production capacity, adapt to batch production. The sample carrier cavity adopts a multi-segment structure, which can load multiple mercury cadmium telluride p-on-n devices at one time. Combined with the ability to control multiple temperature zones simultaneously, it can realize batch heat treatment of devices, which greatly improves process efficiency and production capacity. The multi-segment heating unit supports an adjustable cooling rate of 5℃ / h to 80℃. A rapid cooling mode (such as 80℃ / h) can be set according to process requirements to shorten the transition time from the high temperature stage to the low temperature stage and avoid the problem of low efficiency caused by excessive cooling in traditional processes.

[0011] (3) Improve process stability and controllability. The temperature control accuracy of the multi-temperature zone constant temperature structure (≥3 temperature zones) reaches ±0.5℃. The temperature difference, distance and heating / cooling rate between the high temperature zone and the low temperature zone can be flexibly adjusted. Combined with the adjustable gap design, the temperature gradient and mercury partial pressure can be precisely controlled to ensure the stability of key processes such as element diffusion and interface barrier formation. The temperature difference (10℃~200℃), distance (0.5cm~15cm), heating / cooling rate (heating 10℃ / h~200℃ / h, cooling 5℃ / h~80℃ / h), and gap width (0~10cm) between the high temperature zone and the low temperature zone can all be adjusted to meet the heat treatment requirements of mercury cadmium telluride p-on-n devices with different specifications and performance requirements, and enhance the system versatility.

[0012] (4) The core temperature gradient field is easy to control. The independently heated annealing furnace forms a basic temperature zone. By setting different target temperatures (such as the high temperature zone providing the element diffusion power and the low temperature zone controlling the diffusion boundary), the thermodynamic conditions of lattice occupancy (the elements migrate directionally under the temperature gradient) are directly met. The addition of the medium temperature zone can refine the temperature gradient (such as the smooth transition of "high temperature-medium temperature-low temperature"), avoid lattice defects caused by temperature change, and support "high-precision temperature gradient control". The high temperature zone can slide laterally through the slide rail with a spacing adjustment range of 0.5cm~15cm. With the adjustable temperature difference range of 10℃~200℃, the "temperature gradient slope" can be accurately controlled (the smaller the spacing, the steeper the gradient when the temperature difference is constant), which can meet the needs of different element diffusion rates and support "flexible adjustment of multiple process parameters". The design of the support rod and the second lateral slide rail is located on both sides, which does not block the heating assistance of the heating unit below. The lateral sliding structure design of the sample carrier stage maintains the airtightness of the working chamber through the sealing hole of the cover, which indirectly ensures the stability of the vacuum environment of the sample carrier cavity and facilitates the removal and placement.

[0013] (5) It has the function of automatically controlling the adjustable spacing of high temperature zone and the real-time adjustable spacing of heating unit. It can design differentiated control strategies for the core needs of key stages of device fabrication (arsenic diffusion, p-type activation, and interface barrier formation). It can monitor, provide feedback, and adjust the control in real time for the arsenic diffusion stage, p-type activation stage, and interface barrier formation stage respectively, which significantly improves the control accuracy of "element lattice occupancy" and "interface barrier". Based on the real-time monitoring (temperature gradient, mercury partial pressure, sample surface state, etc.) and dynamic adjustment mechanism of the display and control unit, a control closed loop is formed. It supports multiple dynamic process curves and devices of different specifications. Through the preset parameter library, it can quickly switch the process mode for p-type layers of different thicknesses and n-type layers of different compositions without re-debugging, which improves the versatility of the equipment and makes it easy to solidify the optimal process parameters (gap width, heating unit spacing, etc.) into the program, reduce the dependence on the experience of operators, realize standardized operation, and reduce human error. Attached Figure Description

[0014] Figure 1 This is a structural diagram of the box in the embodiment;

[0015] Figure 2 A schematic diagram of the multi-temperature zone constant temperature structure in the embodiment;

[0016] Figure 3 A schematic diagram of the positional structure of the heating unit in the embodiment;

[0017] Figure 4 A schematic diagram of the position structure of the guide bar and pulley in the heating unit of the embodiment;

[0018] Figure 5 A schematic diagram of the position of the sample support stage in the embodiment;

[0019] Figure 6 A schematic diagram of the sample carrier cavity in the embodiment;

[0020] Figure 7 A schematic diagram of the sample support stage being pushed out and the sample support cavity being loaded in the embodiment;

[0021] Figure 8 A schematic diagram of the sample support stage being pushed in as described in the embodiment;

[0022] Figure 9 A schematic diagram showing the completion of sample support stage insertion and fixation in the embodiment;

[0023] Figure 10 Internal schematic diagram of the device of the present invention in the embodiment;

[0024] Figure 11 Schematic diagram of the housing and moving parts in the embodiment;

[0025] Figure 12 A schematic diagram of multiple medium-temperature zones in the embodiment.

[0026] Figure label:

[0027] 1—Box body, 101—First horizontal slide rail, 102—Through hole, 103—Round hole, 104—Second horizontal slide rail, 105—Slide groove, 106—First screw, 107—First slider, 108—First adjusting motor, 109—Second screw, 110—Second adjusting motor, 111—Second slider;

[0028] 2—Multi-temperature zone constant temperature structure, 201—Low temperature zone, 202—Medium temperature zone, 203—High temperature zone, 204—Sliding sleeve;

[0029] 3—Sample support platform, 31—Cover, 32—Support rod, 33—Support rod;

[0030] 4—Sample support cavity, 401—Mercury source, 402—Sample;

[0031] 5—Heating unit, 51—Guide bar, 52—Pulley. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to specific embodiments and the accompanying drawings. It should be understood that these descriptions are merely exemplary and not intended to limit the scope of the invention. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concept of the invention.

[0033] Example 1: A device for controlling elemental lattice occupancy and interface barrier in a mercury cadmium telluride p-on-n device, comprising:

[0034] Cabinet 1 integrates a display and control unit, a power module, and a working compartment;

[0035] The multi-temperature zone constant temperature structure 2 is set in the upper half of the chamber 1, including a low temperature zone 201 and a high temperature zone 203. The annealing furnaces of the low temperature zone 201 and the high temperature zone 203 are connected to the power supply module and the control module and can generate heat independently. The middle is provided with horizontally aligned cavities, and the distance between the low temperature zone 201 and the high temperature zone 203 is adjustable, which is used to realize the multi-temperature zone and temperature gradient control of the sample carrying cavity 4.

[0036] The sample support stage 3 is horizontally inserted into the multi-temperature zone constant temperature structure 2 and can be pulled out or inserted from one side to support the sample support cavity 4.

[0037] The sample carrier cavity 4 is vacuum sealed and contains a mercury source 401 and several mercury cadmium telluride p-on-n device samples 402. It can be placed on the sample carrier stage 3 and placed in the multi-temperature zone constant temperature structure 2.

[0038] Heating units 5, several of which are placed side by side in the lower half of the housing 1, can be moved in the lateral direction, and the distance between each heating unit 5 can be adjusted for heat source supplementation and temperature control.

[0039] Among them, the display and control unit can control the heating temperature and position spacing of the heating unit 5 and the multi-temperature zone constant temperature structure 2, and regulate the temperature and constant temperature time of the constant temperature zone in which the sample carrying cavity 4 is located, so as to realize the gradient temperature control of the low temperature zone 201, the multi-segment medium temperature zone 202 and the high temperature zone 203; it can monitor the temperature, power and time in real time to support the control of temperature, temperature difference and temperature control rate.

[0040] In actual use:

[0041] 1. Sample 402 preparation and loading: Place the mercury cadmium telluride p-on-n device sample 402 and the mercury source 401 (providing mercury element) into the vacuum-sealed tube (sample carrier cavity 4) and ensure a seal. Insert the sample carrier cavity 4 laterally into the cavity of the multi-temperature zone constant temperature structure 2 through the sample carrier stage 3, and seal the through hole 102 with the cover 31 to complete the loading.

[0042] 2. Parameter setting: Key parameters can be set through the display and control unit, including: target temperature of low temperature zone 201, temperature difference (10℃~200℃), heating rate (10℃ / h~200℃ / h), cooling rate (5℃ / h~80℃ / h), annealing time; distance between each temperature zone (0.5cm~15cm); supplementary heating power and position of heating unit 5, etc.

[0043] 3. Temperature control system startup: The power module supplies power to the multi-temperature zone constant temperature structure 2, heating unit 5, and adjustment motor. Each annealing furnace (low temperature zone 201, high temperature zone 203) of the multi-temperature zone constant temperature structure 2 heats up independently, forming a preset temperature gradient; the heating unit 5 moves laterally to the target position according to the thermal field requirements, supplementing the heat source to fine-tune the temperature distribution.

[0044] 4. Dynamic Temperature Control and Monitoring: The display and control unit monitors parameters such as temperature, heating power, and annealing time in each temperature zone in real time, and dynamically optimizes the thermal field through the following methods:

[0045] Adjusting the distance between the high-temperature zone 203 and the low-temperature zone 201 changes the heat conduction path and optimizes the temperature gradient;

[0046] By controlling the lateral position of heating unit 5, local heat sources can be supplemented, enabling more precise temperature control.

[0047] 5. Annealing control process: Under a stable temperature gradient and vacuum environment, mercury source 401 releases mercury element. Combined with temperature gradient drive, the elements (tellurium, cadmium, mercury) inside the device rearrange in the lattice (lattice occupancy). At the same time, the barrier structure at the interface is controlled due to the change in element distribution.

[0048] 6. Completion and Sampling: After the annealing time is completed, the system cools down at the set rate, and the display and control unit indicate that the process is complete. The sample carrier cavity 4 is pulled out laterally through the sample carrier stage 3 to remove the adjusted device sample 402.

[0049] Preferably, the multi-temperature zone constant temperature structure 2 further includes at least one or more intermediate temperature zones 202 located between the low-temperature zone 201 and the high-temperature zone 203; wherein, the temperature difference between the high-temperature zone 203 and the low-temperature zone 201 can be adjusted within the range of 10℃ to 200℃, the distance between the high-temperature zone 203 and the low-temperature zone 201 can be adjusted within the range of 0.5cm to 15cm, the heating rate of each constant temperature zone can be adjusted within the range of 10℃ / h to 200℃ / h, and the cooling rate of each constant temperature zone can be adjusted within the range of 5℃ / h to 80℃ / h; the intermediate temperature zone 202 can be designed in a multi-segment manner, with the high-temperature zone 203, intermediate temperature zone 202, and low-temperature zone 201 exhibiting a temperature gradient distribution, with the high-temperature zone 203 having the highest temperature, the low-temperature zone 201 having the lowest temperature, and the intermediate temperature zone 202 having a temperature between the two. Through the setting of this temperature gradient, precise control of temperature and mercury partial pressure can be achieved, thereby promoting key process processes such as element diffusion and interface barrier regulation in mercury cadmium telluride p-on-n devices.

[0050] After the intermediate temperature zone 202 is divided into multiple segments, each segment can be independently temperature-controlled. This allows for a finer and more continuous temperature change curve between the high temperature zone 203 and the low temperature zone 201. For example, if the intermediate temperature zone 202 is divided into two segments, appropriate temperature differences can be set between the high temperature zone 203 and the first intermediate temperature zone 202, between the first intermediate temperature zone 202 and the second intermediate temperature zone 202, and between the second intermediate temperature zone 202 and the low temperature zone 201. This achieves a temperature gradient that better meets process requirements and more precisely controls the diffusion process of arsenic and cadmium. In the heat treatment process of mercury cadmium telluride p-on-n devices, different process stages may have different temperature requirements. After the intermediate temperature zone 202 is divided into multiple segments, the temperature of each segment of the intermediate temperature zone 202 can be independently adjusted according to the needs of different stages. For example, a specific temperature environment is required at a certain stage of arsenic diffusion, while a different temperature environment is required at the stage of cadmium interdiffusion. Multiple intermediate temperature zones 202 can better meet these stage-specific temperature change requirements.

[0051] The distance between the low-temperature zone 201 and the high-temperature zone 203 is adjustable from 0 to 10 cm by controlling the lateral movement of the high-temperature zone 203. A guide rail is installed below the high-temperature zone 203, allowing for movement of the high-temperature zone 203 via an automatic control unit to further adjust the temperature difference. When the gap on one side of the high-temperature zone 203 is narrower, heat from the high-temperature zone 203 is more easily transferred to the low-temperature zone 201, resulting in a steeper temperature transition between the two. When the gap is wider, heat transfer is hindered, and the temperature boundary between the high-temperature zone 203 and the low-temperature zone 201 becomes clearer, with a smoother transition. This change in thermal field distribution provides a basis for the segmented design of the medium-temperature zone 202. By setting an independently temperature-controlled medium-temperature section near the gap, the thermal resistance characteristics of the gap can be utilized to stabilize the temperature of the medium-temperature section within a specific range between the high and low temperatures.

[0052] By controlling the temperature difference between the high-temperature region 203 and the low-temperature region 201, the mercury partial pressure gradient and element diffusion driving force of the entire system are adjusted. Temperature difference is a key factor affecting the balance of mercury atom volatilization and replenishment in mercury cadmium telluride materials: the smaller the temperature difference, the more gradual the mercury partial pressure distribution, which is suitable for slow and uniform element diffusion; the larger the temperature difference, the more significant the mercury partial pressure gradient, which can enhance the driving force of arsenic diffusion to low-concentration regions, while accelerating the interdiffusion of cadmium. The adjustment range of 10℃ to 200℃ covers the needs of different process stages: for example, when arsenic replaces tellurium lattice sites, a smaller temperature difference (such as 50℃) may be needed to ensure uniformity; while the interface barrier formation stage may require a larger temperature difference (such as 150℃) to promote rapid interdiffusion of cadmium.

[0053] Two first horizontal slide rails 101 are suspended on both sides of the middle part of the housing 1. The bottom of the annealing furnace of the low temperature zone 201, or the low temperature zone 201 and the medium temperature zone 202, is installed on the first horizontal slide rails 101. The bottom of the annealing furnace of the high temperature zone 203 is provided with a sliding sleeve 204 adapted to the first horizontal slide rails 101 and is fitted onto the first horizontal slide rails 101, so that the annealing furnace of the high temperature zone 203 can slide laterally on the first horizontal slide rails 101 to adjust its distance from the low temperature zone 201 or the medium temperature zone 202.

[0054] By changing the spatial distance between the high and low temperature zones 201, the spatial distribution gradient of the temperature field is shaped in conjunction with the temperature difference parameter. The relationship between distance and temperature gradient is as follows: Under the same temperature difference, the smaller the distance (e.g., 0.5cm), the higher the rate of temperature change in the space (the steeper the temperature gradient), which is suitable for processes that require rapid formation of local concentration gradients; the larger the distance (e.g., 15cm), the gentler the temperature change, which is suitable for scenarios where elements diffuse uniformly over long distances. This parameter, combined with the temperature difference, can flexibly adjust the gradient field coupled with the temperature. For example, a small distance + a large temperature difference can form a "steep gradient," while a large distance + a small temperature difference can form a "gentle gradient," meeting the requirements of different device structures for element diffusion paths.

[0055] Specifically: Controlling the rate of temperature increase is crucial to prevent excessive internal thermal stress or uneven element diffusion caused by rapid heating. Low-rate heating (e.g., 10℃ / h) is suitable for the initial stage of device development, reducing lattice damage caused by thermal expansion differences and ensuring initial diffusion of arsenic at low temperatures, laying the foundation for subsequent high-temperature activation. High-rate heating (e.g., 200℃ / h) is suitable for stages requiring rapid attainment of the target temperature (e.g., high-temperature activation period), shortening process time and suppressing disordered diffusion of impurity atoms to improve element occupancy accuracy. Independent adjustment of the heating rate in each isothermal zone enables "segmented heating," for example, rapid heating of the high-temperature zone 203 to the target value while synchronous low-rate heating of the medium-temperature zone 202 maintains the transition gradient and avoids sudden local temperature changes.

[0056] Controlling the rate of temperature reduction ensures that elements stably occupy lattice sites during the cooling process and promotes the solidification of the interfacial barrier structure. Low-speed cooling (e.g., 5℃ / h) is suitable for the stabilization stage after element activation, reducing lattice defects (such as vacancies and interstitial atoms) and allowing arsenic to more firmly replace tellurium lattice sites, ensuring the stability of p-type activation. High-speed cooling (e.g., 80℃ / h) is suitable after the formation of the interfacial barrier, quickly "freezing" the interdiffusion state of cadmium, avoiding excessive diffusion that could destroy the barrier structure, and shortening the process cycle. Independent adjustment of the cooling rate in each isothermal zone can achieve "step-by-step cooling," for example, the high-temperature zone 203 is rapidly cooled to lock the surface barrier, while the medium-low temperature zone 201 is slowly cooled to stabilize the internal structure, balancing efficiency and performance.

[0057] Preferably, the sample support stage 3 includes:

[0058] The cover 31 is used to cover the through hole 102 leading from the outside of the box 1 to the inside of the multi-temperature zone constant temperature structure 2; to seal the through hole 102 of the box 1 and maintain the airtightness of the inside of the multi-temperature zone constant temperature structure 2; to prevent heat leakage and ensure the temperature stability of the temperature zone; the cover 31 is provided with a handle on the outside, and can be pulled out or inserted by pulling the handle during operation.

[0059] Two horizontally arranged support rods 32 are installed inside the cover 31, passing through the through hole 102 and extending laterally into the multi-temperature zone constant temperature structure 2. The spacing between them is smaller than the diameter of the sample carrying cavity 4. They are used to support and fix the sample carrying cavity 4. Because the spacing is smaller than the diameter of the sample carrying cavity 4, the support rods 32 can "lock" the sample carrying cavity 4 from below or both sides. The design of being installed inside the cover 31 allows the position to be adjusted synchronously with the opening and closing of the cover 31, which facilitates the insertion and removal of the sample carrying cavity 4. When the cover 31 is opened, the support rods 32 move with the cover 31 to make room for the sample carrying cavity 4. When the cover 31 is closed, the support rods 32 return to their original position and fix the sample 402.

[0060] Two horizontally arranged support rods 33 are installed on both sides of the cover 31, passing through circular holes 103 on the outside of the box 1, and slidably mounted on two second horizontal slide rails 104 suspended on both sides of the middle of the box 1. These support rods support the sample carrier stage 3 and can slide laterally along the second horizontal slide rails 104 to insert or remove the sample carrier stage 3. The support rods 33 can slide laterally along the slide rails, similar to the sliding structure of a drawer, thereby driving the sample carrier stage 3 to be inserted into or pulled out of the constant temperature structure for sampling after the process is completed.

[0061] The bottom of the housing 1 is provided with a transverse sliding groove 105. The bottom of the heating unit 5 can be embedded in the sliding groove 105. The middle of both ends of the heating unit 5 is provided with a rearward protruding guide strip 51. The guide strip 51 is locked at the edge of the sliding groove 105, so that the heating unit 5 can be moved laterally along the sliding groove 105 under the action of external force, thereby changing the distance between them. The bottom of the heating unit 5 is embedded in the sliding groove 105, and the guide strip 51 is locked at the edge of the sliding groove 105, which not only achieves stable support for the heating unit 5 and prevents it from tipping over, but also restricts its movement direction, allowing it to move only laterally along the sliding groove 105. When pushed by external force, the heating unit 5 can slide along the sliding groove 105, changing the distance with the adjacent heating unit 5, such as from 3cm to 5cm, thereby adjusting the constant temperature zone range and temperature gradient corresponding to each heating unit 5. The smaller the distance, the stronger the thermal coupling between adjacent temperature zones; the larger the distance, the weaker the thermal interference.

[0062] In Example 2, based on Example 1, a pulley 52 is provided at the bottom of the heating unit 5. The pulley 52 can roll on the bottom surface of the slide groove 105. Several slits are provided at the bottom of the slide groove 105 in the horizontal direction. Several first screws 106 located below the slide groove 105 are arranged horizontally, with the number corresponding to the heating unit 5. Each first screw 106 is fitted with a matching first slider 107. Each first slider 107 passes upward through a slit and is connected to a heating unit 5. A corresponding first adjustment motor 108 is installed at the other end of the first screw 106. The first adjustment motor 108 is connected to the display and control unit and can drive the first screw 106 to rotate, thereby driving the corresponding first slider 107 and the heating unit 5 to move laterally along the length direction of the first screw 106. This structure achieves automated adjustment of the spacing between heating units 5 (multi-segment heating units 5, number ≥ 5) through a combination of "pulley 52 + slide groove 105 + screw-slider + adjustment motor". Pullley 52 is installed at the bottom of each heating unit 5, allowing it to roll within the transverse slide groove 105 at the bottom of the housing 1, reducing frictional resistance and ensuring smooth movement. The slide groove 105 has several transverse slits at its bottom, each corresponding to a heating unit 5. A first screw 106 below the slide groove 105, also corresponding to a heating unit 5, is fitted with a matching first slider 107. The slider passes upward through the slits and connects to the heating unit 5, acting as a "connector" to convert the rotational motion of the screw into the transverse movement of the heating unit 5. The other end of each first screw 106 is connected to a first adjustment motor 108, which is electrically connected to the display and control unit to receive control commands.

[0063] When the process requires adjustment of the spacing between heating units 5, such as refining the temperature gradient in the intermediate temperature zone 202 or adapting to different sample sizes 402, the display and control unit issues commands:

[0064] The first adjustment motor 108 starts, driving the corresponding first screw 106 to rotate;

[0065] When the screw rotates, the first slider 107 fitted on it moves laterally along the length of the screw. The screw is a lead screw structure, and the rotational motion is converted into the linear motion of the slider.

[0066] The slider moves the heating unit 5 above synchronously through the slit. Because the heating unit 5 has a pulley 52 at the bottom, it can slide smoothly along the slide groove 105.

[0067] The independent movement of a single heating unit 5 allows for precise adjustment of the spacing between any two adjacent heating units 5, such as from 3cm to 5cm. Multiple heating units 5 can be adjusted synchronously or independently to meet the needs of complex temperature fields. Replacing traditional manual adjustment, the spacing adjustment accuracy reaches millimeter level or even higher through motor drive, avoiding errors from manual operation. During heat treatment (without stopping the machine), based on real-time monitored temperature field data, such as local temperature deviations, the control unit automatically adjusts the spacing of the heating units 5 to optimize the temperature gradient. For example, reducing the spacing enhances local thermal coupling, while increasing the spacing weakens thermal interference. Different sizes and structures of mercury cadmium telluride devices have different temperature gradient requirements; the flexible adjustment of the heating unit spacing allows for rapid switching of temperature field modes, improving system versatility.

[0068] A second screw 109 is horizontally mounted above the multi-temperature zone constant temperature structure 2 on the housing 1. One end of the second screw 109 is connected to a second adjusting motor 110 mounted on the housing 1. A second slider 111 is mounted downwards on the second screw 109. The second slider 111 is connected to the annealing furnace of the high-temperature zone 203 and can be connected to the display and control unit via the second adjusting motor 110. The rotation of the second screw 109 can be controlled to drive the second slider 111 to move laterally, thereby adjusting the gap between the annealing furnace of the high-temperature zone 203 and the adjacent low-temperature zone 201 or medium-temperature zone 202. This structure, through the combination of "second screw 109 - slider + second adjusting motor 110", realizes the automatic adjustment of the gap between the high-temperature zone 203 and the adjacent low-temperature zone 201 / medium-temperature zone 202.

[0069] A second screw 109 is horizontally mounted above the multi-temperature zone constant temperature structure 2. A second slider 111 is connected to the screw, and the slider is connected downwards to the annealing furnace of the high-temperature zone 203. One end of the second screw 109 is connected to a second adjusting motor 110, which is electrically connected to the display and control unit to receive control commands. When the process requires adjusting the gap between the high-temperature zone 203 and the adjacent temperature zone, such as changing the steepness of the temperature gradient, the display and control unit issues a command:

[0070] The second adjusting motor 110 starts, driving the second screw 109 to rotate;

[0071] When the screw rotates, the second slider 111 moves laterally along the length of the screw, thereby driving the high-temperature zone 203 annealing furnace connected to it to move laterally in sync. Because there is a guide rail below the high-temperature zone 203, the movement is smoother.

[0072] The movement of the high-temperature zone 203 directly changes the gap width with the adjacent low-temperature zone 201 / medium-temperature zone 202, such as from 1cm to 3cm;

[0073] The gap width determines the heat transfer efficiency between the high-temperature zone 203 and the adjacent temperature zone. A narrow gap results in strong thermal coupling, while a wide gap results in weak thermal coupling. Temperature gradients can be precisely shaped through automatic adjustment. For example, a narrow gap is suitable for a steep gradient, while a wide gap is suitable for a gentle gradient. During the heat treatment process, if the actual temperature difference deviates from the preset value, such as due to heat loss causing the temperature difference to be too small, the high-temperature zone 203 can be moved quickly by a motor to widen the gap, reduce heat transfer, correct the temperature difference in real time, and ensure process stability.

[0074] The automated adjustment structure is an important supplement to the "multi-temperature zone constant temperature control". Through the integration of mechanical structure and electronic control system, it realizes precise, rapid and automated adjustment of "heating unit 5 gap" and "high temperature zone 203 gap".

[0075] Example 3: A method for controlling elemental lattice occupancy and interface barrier modulation of a mercury cadmium telluride p-on-n device, comprising the following steps:

[0076] Step S1: Liquid mercury and multiple mercury cadmium telluride p-on-n device samples 402 are sequentially loaded into the sample carrier cavity 4, and the cavity is vacuum-sealed to a vacuum level of 1×10⁻⁶. -4 Torr ensures airtightness; in this embodiment, there are 4 samples 402.

[0077] Step S3: Place the sample carrier cavity 4 horizontally on the sample carrier stage 3, and move the sample carrier cavity 4 into the multi-temperature zone constant temperature structure 2.

[0078] Step S4: Adjust the gap width between the high temperature zone 203 and the adjacent low temperature zone 201 or medium temperature zone 202 according to the temperature gradient requirements, and set the gap width on one side of the high temperature zone 203 to 1 cm.

[0079] Step S5: Adjust the distance between each heating unit 5 according to the temperature gradient requirements; in this embodiment, there are 5 heating units 5, and the distance between the 5 heating units 5 is adjusted to 3 cm.

[0080] Step S6: Set the temperature and holding time of each constant temperature zone, the power of each heating unit, the heating rate of each constant temperature zone, and the cooling rate of each constant temperature zone through the display and control unit, and start heating operation; this embodiment has 3 constant temperature zones; through steps S4 and S5, the physical distance between each constant temperature zone is precisely controlled, providing the possibility of forming different temperature differences. At the same time, by further controlling the temperature parameters of each constant temperature zone and each heating unit, it has the ability to precisely regulate the different temperature differences and temperature gradient shapes between the high temperature zone and the low temperature zone. The high temperature zone 203 to The temperature difference in the low-temperature region 201 can be adjusted within the range of 10℃ to 200℃ according to different requirements. For example, to achieve uniform diffusion of As into the material, the temperature difference is adjusted to 200℃ with a linear temperature gradient; to ensure As occupies the tellurium lattice sites and maintains a high p-type activation rate, the temperature difference is adjusted to 50℃ with a linear temperature gradient; to promote the diffusion of cadmium at the interface and build a barrier structure, the temperature difference is adjusted to 100℃ with a linear temperature gradient. By controlling these parameters, a high quantum efficiency and low dark current photodetector can be fabricated.

[0081] Step S7: After the program ends, turn off the heating unit 5, pull out the sample carrier stage 3, and move the sample carrier cavity 4 out of the multi-temperature zone constant temperature structure 2.

[0082] Example 4, based on Example 3, after step S6, also includes real-time monitoring of temperature gradient information during the arsenic diffusion stage to ensure that arsenic diffuses uniformly to the low concentration area and replaces the tellurium lattice sites. If the cooling rate is found to be too fast or uneven during the reaction, the display and control unit actively runs the second adjustment motor 110 to widen the spacing of the high temperature zone 203 to reduce heat transfer efficiency and smooth the temperature gradient.

[0083] During the p-type activation phase, high temperature information is monitored in real time. If the temperature deviates, the display and control unit actively controls the spacing of the heating units through the corresponding first adjustment motor 108 to make real-time gap adjustment, narrowing the spacing of the high temperature zone 203 to enhance thermal coupling and improve local temperature stability.

[0084] During the formation of the interface barrier, a precise component gradient is required, which depends on the directional interdiffusion of cadmium. If the barrier structure is too thick or too thin, the display and control unit actively adjusts the spacing between the heating units through the corresponding first adjustment motor 108 to refine the temperature distribution in the medium temperature zone 202, control the temperature gradient, and thus control the interdiffusion rate.

[0085] When temperature disturbances or changes occur in other stages, the display and control unit actively adjusts the spacing of the high-temperature zone 203 through the operation of the second adjustment motor 110 to correct the overall temperature difference, and / or adjusts the spacing of the heating units through the corresponding first adjustment motor 108 to correct the local temperature distribution, thereby offsetting disturbances in real time to ensure the stability of the process.

[0086] The display and control unit has automatic adjustment control. It can monitor temperature, temperature gradient, mercury partial pressure, and surface state parameters of sample 402 in real time through sensors. Combined with the feedback from the display and control unit, it dynamically adjusts the spacing of high-temperature zone 203 and the spacing of heating unit according to preset algorithm to achieve closed-loop control of "monitoring-feedback-adjustment".

[0087] Alternatively, it can automatically adjust to support multi-segment dynamic process curves. For example, in the same batch processing, it can first achieve rapid heating by automatically narrowing the gap (to meet the initial requirements of arsenic diffusion), and then gradually widen the gap and adjust the spacing of the heating units to enter the gentle cooling stage (to meet the requirements of interface barrier solidification). There is no need to stop the machine midway for adjustment, which can adapt to more complex device structure designs.

[0088] For mercury cadmium telluride (HCd) devices of different specifications (such as p-type layers of different thicknesses and n-type layers of different compositions), a preset automatic adjustment parameter library can be used to quickly switch process modes, improving the versatility of the equipment. Automatic adjustment can solidify optimal process parameters (such as gap widths at different stages and spacing between heating elements) into a program, enabling "one-click" batch processing. This avoids reliance on operator experience and promotes process standardization. This is crucial for the large-scale production of HCd infrared detectors, ensuring the consistency of performance across different batches and supporting the mass production of detectors with low dark current and high quantum efficiency.

[0089] The above-mentioned monitoring of data information during the reaction involves sensors including multi-point thermocouples for temperature gradient monitoring. Multiple temperature sensors are arranged around the low-temperature zone 201, medium-temperature zone 202, high-temperature zone 203 of the multi-temperature zone isothermal structure 2 and around the sample-bearing cavity 4 to collect temperature values ​​at different locations in real time. The temperature difference and gradient (temperature difference / spacing) are calculated through a display and control unit to reflect the uniformity of temperature distribution and gradient slope. A mass spectrometer or quartz crystal microbalance is used to monitor the partial pressure of mercury. A trace gas sampling port is reserved in the sample-bearing cavity 4. The partial pressure of mercury vapor in a vacuum environment is analyzed by mass spectrometry (using the characteristic mass-to-charge ratio of mercury atoms for identification); or the deposition quality of mercury vapor on the crystal surface is monitored using a QCM. The vapor pressure is converted to ensure a stable supply of mercury from source 401. An in-situ infrared spectrometer monitors the surface condition of sample 402. An optical window is reserved in the sample-bearing cavity 4 or the multi-temperature zone isothermal structure 2. Infrared spectroscopy is used to analyze the surface chemical state (e.g., oxidation, elemental bonding state), or laser interferometry / elliptic polarization is used to monitor surface morphology, film thickness, and defect changes (e.g., optical path difference caused by lattice distortion). Sensors capture key parameters such as temperature gradient, mercury partial pressure, and surface condition in real time. The display and control unit can immediately compare these parameters with preset process standards and dynamically adjust the spacing of high-temperature zones 203 (correcting overall temperature difference) or the spacing of heating units 5 (correcting local thermal fields), forming a closed loop of "monitoring-feedback-adjustment."

[0090] For example, if the partial pressure of mercury is lower than the threshold (which may lead to insufficient mercury lattice occupancy), the control unit can compensate the mercury source 401 supply in real time by increasing the temperature of the high-temperature zone 203 (indirectly increasing the mercury evaporation rate) or reducing the distance between the high-temperature zone 203 and the sample 402 (enhancing heat conduction).

[0091] If abnormal oxidation is detected by surface condition monitoring (which may affect the interface barrier), the local inert atmosphere can be strengthened by adjusting the position of heating unit 5 (e.g., supplementing with nitrogen protection, which requires coordination with the gas path design) to avoid defect formation. This will control the fluctuation of process parameters to a very small range, significantly improving the accuracy of element lattice occupancy and the consistency of the interface barrier.

[0092] Based on the above scheme, this device can dynamically adapt in stages to meet the requirements of complex processes:

[0093] To address the differentiated needs of the three core stages in the fabrication of mercury cadmium telluride (HCd) devices—arsenic diffusion, p-type activation, and interface barrier formation—monitoring and control strategies are dynamically matched:

[0094] Arsenic diffusion stage: Focus on monitoring the temperature gradient (using multi-point thermocouples). If the diffusion rate is too fast (the surface arsenic concentration is too high), immediately widen the 203 spacing in the high-temperature region to reduce the gradient and avoid lattice dislocations.

[0095] p-type activation stage: Focusing on local temperature stability (infrared temperature measurement array monitors the surface of sample 402), thermal coupling is enhanced by adjusting the spacing of heating unit 5 to ensure that the activation efficiency meets the standard;

[0096] Interfacial barrier formation stage: Combining mercury partial pressure (mass spectrometer) and surface state (ellipsometry), the interdiffusion rate of cadmium is controlled to avoid an excessively thick / thin barrier. Effect: The regulation of each stage is more targeted, solving the problem of difficulty in simultaneously meeting the needs of multiple stages in traditional "one-size-fits-all" processes, and providing process assurance for high-performance devices (such as low dark current and high quantum efficiency).

[0097] Multi-segment dynamic process curves: parameters can be automatically switched without stopping the machine (such as from "narrow gap rapid heating" to "wide gap gradual cooling"), adapting to the continuous fabrication of complex device structures and significantly shortening the processing time per batch (efficiency improvement of more than 30%, refer to conventional data of semiconductor annealing process).

[0098] Preset parameter library and "one-click" operation: The optimal process parameters (gap width, heating unit 5 spacing, etc.) of different specifications of devices (such as different p-type layer thickness, n-type layer composition) are solidified into programs to avoid relying on the operator's experience and achieve standardized production;

[0099] Batch consistency control: By eliminating environmental interference between batches (such as room temperature fluctuations and gas source pressure changes) through closed-loop feedback, the deviation of lattice occupation and interface barrier performance of different batches of devices is <5% (far lower than the 15%-20% of traditional manual control); breaking through the bottleneck from "small-batch preparation in the laboratory" to "mass production".

[0100] It should be understood that the specific embodiments described above are merely illustrative or explanatory of the principles of the invention and do not constitute a limitation thereof. Therefore, any modifications, equivalent substitutions, improvements, etc., made without departing from the spirit and scope of the invention should be included within the protection scope of the invention. Furthermore, the appended claims are intended to cover all variations and modifications falling within the scope and boundaries of the appended claims, or equivalent forms of such scope and boundaries.

Claims

1. A device for controlling elemental lattice occupancy and interface potential barrier in a mercury cadmium telluride p-on-n device, characterized in that... include: The enclosure (1) integrates a display and control unit, a power module, and a working compartment; The multi-temperature zone constant temperature structure (2) is set in the upper half of the chamber (1), including a low temperature zone (201) and a high temperature zone (203). The annealing furnaces of the low temperature zone (201) and the high temperature zone (203) are connected to the power supply module and the control module, respectively, and each has a horizontally aligned cavity in the middle. The distance between the low temperature zone (201) and the high temperature zone (203) is adjustable, which is used to realize the multi-temperature zone and temperature gradient control of the sample carrying cavity (4). The sample support stage (3) is horizontally inserted into the multi-temperature zone constant temperature structure (2) and can be pulled out or inserted from one side to support the sample support cavity (4). The sample carrier cavity (4) is vacuum sealed and contains a mercury source (401) and several mercury cadmium telluride p-on-n device samples (402). It can be placed on the sample carrier stage (3) and placed in the multi-temperature zone constant temperature structure (2). Heating units (5), several of which are placed side by side in the lower half of the housing (1), can be moved in the lateral direction, and the distance between each heating unit (5) can be adjusted for the supplementation of heat source and temperature control. Among them: the display and control unit can control the heating temperature and position spacing of the heating unit (5) and the multi-temperature zone constant temperature structure (2) to regulate the temperature and constant temperature time of the constant temperature zone in which the sample carrier cavity (4) is located, and realize the gradient temperature control of the low temperature zone (201), the multi-segment medium temperature zone (202) and the high temperature zone (203); it can monitor the temperature, power and time in real time to support the control of temperature, temperature difference and temperature control rate.

2. The elemental lattice occupancy and interface barrier modulation device for the mercury cadmium telluride p-on-n device according to claim 1, characterized in that, The multi-temperature zone constant temperature structure (2) further includes at least one or more intermediate temperature zones (202) located between the low temperature zone (201) and the high temperature zone (203). The temperature difference between the high temperature zone (203) and the low temperature zone (201) can be adjusted within the range of 10℃ to 200℃. The distance between the high temperature zone (203) and the low temperature zone (201) or the intermediate temperature zone (202) can be adjusted within the range of 0.5cm to 15cm. The heating rate of each constant temperature zone can be adjusted within the range of 10℃ / h to 200℃ / h. The cooling rate of each constant temperature zone can be adjusted within the range of 5℃ / h to 80℃ / h. The distance between the low-temperature zone (201) and the high-temperature zone (203) is adjustable in the range of 0 to 10 cm by controlling the lateral movement of the high-temperature zone (203). A guide rail is provided under the high-temperature zone (203), and the high-temperature zone (203) can be moved by the automatic control unit to further adjust the temperature difference.

3. The elemental lattice occupancy and interface barrier modulation device for mercury cadmium telluride p-on-n device according to claim 1 or 2, characterized in that, Two first horizontal slide rails (101) are suspended on both sides of the middle part of the box (1). The bottom of the annealing furnace of the low temperature zone (201), or the low temperature zone (201) and the medium temperature zone (202), is installed on the first horizontal slide rails (101). The bottom of the annealing furnace of the high temperature zone (203) is provided with a sliding sleeve (204) adapted to the first horizontal slide rail (101) and is fitted onto the first horizontal slide rail (101), so that the annealing furnace of the high temperature zone (203) can slide laterally on the first horizontal slide rail (101) to adjust its distance from the low temperature zone (201) or the medium temperature zone (202).

4. The elemental lattice occupancy and interface barrier modulation device for the mercury cadmium telluride p-on-n device according to claim 3, characterized in that, The sample support stage (3) includes: Cover (31) is used to cover the through hole (102) leading from the outside of the box (1) to the inside of the multi-temperature zone thermostatic structure (2); Two horizontally arranged support rods (32) are installed inside the cover (31), pass through the through hole (102), and extend laterally into the multi-temperature zone constant temperature structure (2). The spacing is smaller than the diameter of the sample support cavity (4) and is used to support and fix the sample support cavity (4). Two horizontally arranged support rods (33) are installed on both sides of the cover (31), passing through the round holes (103) set on the outside of the box (1) respectively, and are slidably installed on the two second horizontal slide rails (104) suspended on both sides of the middle of the box (1), for supporting the sample carrier stage (3), and can slide laterally along the second horizontal slide rails (104) to insert or pull out the sample carrier stage (3).

5. The elemental lattice occupancy and interface barrier modulation device for the mercury cadmium telluride p-on-n device according to claim 3, characterized in that, The bottom of the housing (1) is provided with a transverse groove (105), and the bottom of the heating unit (5) can be embedded in the groove (105). The heating unit (5) has a rearward protruding guide strip (51) at the middle of both ends. The guide strip (51) is stuck on the edge of the groove (105), so that the heating unit (5) can be displaced laterally along the groove (105) under the action of external force to change the distance between them.

6. The elemental lattice occupancy and interface barrier modulation device for the mercury cadmium telluride p-on-n device according to claim 5, characterized in that, The heating unit (5) is provided with a pulley (52) at the bottom. The pulley (52) can roll on the bottom surface of the slide groove (105). The bottom of the slide groove (105) is provided with several slits in the horizontal direction. Several first screws (106) located below the slide groove (105) are installed horizontally, with the number corresponding to the heating unit (5). Each first screw (106) is fitted with a matching first slider (107). Each first slider (107) passes through a slit and is connected to a heating unit (5). The other end of the first screw (106) is equipped with a corresponding first adjustment motor (108). The first adjustment motor (108) is connected to the display and control unit and can drive the first screw (106) to rotate, thereby driving the corresponding first slider (107) and the heating unit (5) to move laterally along the length direction of the first screw (106).

7. The elemental lattice occupancy and interface barrier modulation device for the mercury cadmium telluride p-on-n device according to claim 3, characterized in that, A second screw (109) is horizontally installed above the multi-temperature zone constant temperature structure (2) on the housing (1). One end of the second screw (109) is connected to a second adjusting motor (110) installed on the housing (1). A second slider (111) is installed downward on the second screw (109). The second slider (111) is connected to the annealing furnace of the high temperature zone (203). It can be connected to the display and control unit through the second adjusting motor (110). It can control the rotation of the second screw (109) to drive the second slider (111) to move laterally, thereby driving the annealing furnace of the high temperature zone (203) to adjust its gap distance with the adjacent low temperature zone (201) or medium temperature zone (202).

8. A method for controlling the elemental lattice occupancy and interface barrier control device of the mercury cadmium telluride p-on-n device according to any one of claims 1-5, characterized in that... Includes the following steps: Step S1: Liquid mercury and multiple mercury cadmium telluride p-on-n device samples (402) are sequentially loaded into the sample carrier cavity (4), and the tube is vacuum sealed to ensure airtightness; Step S3: Place the sample carrier cavity (4) horizontally on the sample carrier stage (3), and move the sample carrier cavity (4) through the sample carrier cavity (4) to insert it into the multi-temperature zone constant temperature structure (2); Step S4: Adjust the gap width between the high temperature zone (203) and the adjacent low temperature zone (201) or medium temperature zone (202) to effectively adjust the physical distance between each constant temperature zone and increase the temperature difference regulation capability. Step S5: Adjust the distance between each heating unit (5). Through the coordinated action of steps S4 and S5, the physical isolation between the high-temperature zone and the adjacent low-temperature zone or medium-temperature zone is precisely controlled, ensuring that the temperature difference between the high-temperature zone 203 and the low-temperature zone 201 can be adjusted within the range of 10℃ to 200℃. It has the ability to precisely control the different temperature differences and temperature gradient shapes between the high-temperature zone and the low-temperature zone, promote the diffusion of As elements into the material and occupy the tellurium lattice sites to achieve the purpose of p-type activation, and ensure the high quantum efficiency of the photodetector; promote the diffusion of cadmium elements into the material to form a composition gradient barrier structure and reduce surface leakage current. Step S6: Set the temperature and constant temperature time of each constant temperature zone, the power of each heating unit (5), the heating rate of each constant temperature zone, and the cooling rate of each constant temperature zone through the display and control unit, and start heating operation. Based on adjusting the physical distance in steps S4 and S5, further control the temperature parameters of each constant temperature zone and each heating unit to achieve an adjustable temperature difference in the constant temperature zone within the range of 10℃~200℃ while ensuring the temperature gradient distribution and local thermal field uniformity to meet the requirements for the preparation of a high quantum efficiency and low dark current photodetector. Specifically, it is manifested as: (1) Precisely control the As element lattice occupancy site to the tellurium lattice site and ensure the high dispersion uniformity of the As element to complete the formation of a high quality and high uniformity pn junction, ensuring that the photodetector has high quantum efficiency; (2) Precisely control the interface composition gradient barrier structure so that the pn junction is located in the high barrier region, ensuring the normal collection of photogenerated carriers to achieve high quantum efficiency while effectively reducing dark current. Step S7: After the program ends, turn off the heating unit (5), pull out the sample carrier stage (3), and move the sample carrier cavity (4) out of the multi-temperature zone constant temperature structure (2).

9. A method for controlling the elemental lattice occupancy and interface barrier control device of the mercury cadmium telluride p-on-n device according to any one of claims 6 or 7, characterized in that... Includes the following steps: Step S1: Liquid mercury and multiple mercury cadmium telluride p-on-n device samples (402) are sequentially loaded into the sample carrier cavity (4), and the tube is vacuum sealed to ensure airtightness; Step S3: Place the sample carrier cavity (4) horizontally on the sample carrier stage (3), and move the sample carrier cavity (4) through the sample carrier cavity (4) to insert it into the multi-temperature zone constant temperature structure (2); Step S4: Adjust the gap width between the high temperature zone (203) and the adjacent low temperature zone (201) or medium temperature zone (202) according to the temperature gradient requirements; Step S5: Adjust the distance between each heating unit (5) according to the temperature gradient requirements; Step S6: Set the temperature and constant temperature time of each constant temperature zone, the power of each heating unit (5), the heating rate of each constant temperature zone, and the cooling rate of each constant temperature zone through the display and control unit, and start the heating operation. Step S7: During the arsenic diffusion stage, the temperature gradient information is monitored in real time to ensure that the arsenic diffuses evenly to the low concentration area and replaces the tellurium lattice sites. If the cooling rate is too fast or the temperature distribution is uneven during the reaction, the display and control unit actively runs the second adjustment motor (110) to widen the spacing of the high temperature zone (203) to reduce the heat transfer efficiency and smooth the temperature gradient. During the p-type activation phase, high temperature information is monitored in real time. If the temperature fluctuation is large, the display and control unit actively controls the spacing of the heating units through the corresponding first adjustment motor (108) to make real-time gap adjustment. At the same time, the spacing of the high temperature zone (203) is adjusted to enhance thermal coupling and improve local temperature stability. During the formation of the interface barrier, it is necessary to accurately control the temperature gradient to achieve a precise component gradient. This relies on the directional interdiffusion of cadmium. If the barrier structure is too thick or too thin, the display and control unit actively adjusts the spacing between the heating units through the corresponding first adjustment motor (108) to refine the temperature distribution in the medium temperature zone (202), control the temperature gradient, and achieve control of the diffusion rate and uniformity. If temperature disturbances or changes occur in other stages, the display and control unit actively adjusts the spacing of the high-temperature zone (203) through the operation of the second adjustment motor (110) to correct the overall temperature difference, and / or adjusts the spacing of the heating units through the corresponding first adjustment motor (108) to correct the local temperature distribution, and cancels the disturbance in real time to ensure the stability of the process. Step S8: After the program ends, turn off the heating unit (5), pull out the sample carrier stage (3), and move the sample carrier cavity (4) out of the multi-temperature zone constant temperature structure (2).

10. The control method based on claim 8, characterized in that... The display and control unit has automatic adjustment control. It can monitor temperature, temperature gradient, mercury partial pressure and sample (402) surface state parameters in real time through sensors. Combined with the feedback from the display and control unit, it dynamically adjusts the spacing of the high temperature zone (203) and the spacing of the heating unit according to the preset algorithm to achieve closed-loop control of "monitoring-feedback-adjustment". Alternatively, it can automatically adjust to support multi-segment dynamic process curves. For example, in the same batch processing, it can first achieve rapid heating by automatically narrowing the gap (to meet the initial requirements of arsenic diffusion), and then gradually widen the gap and adjust the spacing of the heating units to enter the gentle cooling stage (to meet the requirements of interface barrier solidification). There is no need to stop the machine midway for adjustment, which can adapt to more complex device structure designs. For mercury cadmium telluride (HCd) devices of different specifications (such as p-type layers of different thicknesses and n-type layers of different compositions), a preset automatic adjustment parameter library can be used to quickly switch process modes, improving the versatility of the equipment. Automatic adjustment can solidify optimal process parameters (such as gap widths at different stages and spacing between heating elements) into a program, enabling "one-click" batch processing. This avoids reliance on operator experience and promotes process standardization. This is crucial for the large-scale production of HCd infrared detectors, ensuring the consistency of performance across different batches and supporting the mass production of detectors with low dark current and high quantum efficiency.

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