Perovskite solar cell and preparation method and application thereof

Abstract

The invention provides a perovskite solar cell and a preparation method and application thereof, and belongs to the technical field of photovoltaic devices. The perovskite solar cell comprises a substrate, a first charge transport layer, a perovskite absorption layer, a second charge transport layer, a metal electrode and a protective layer which are sequentially stacked, wherein the protective layer is a multi-element metal oxide composite soft film; the perovskite solar cell is provided with scribing regions, the scribing regions comprise a first scribing region, a second scribing region and a third scribing region, the first scribing region transversely penetrates through the transparent electrode layer in the substrate, and the second scribing region transversely penetrates through the transparent electrode layer in the substrate. The second lineation area transversely penetrates through the first charge transmission layer, the perovskite absorption layer and the second charge transmission layer, and the third lineation area transversely penetrates through the metal electrode and the protection layer. By introducing the multi-element metal oxide composite soft film, the scribing stability and precision can be enhanced, the crater-shaped bulge problem is improved, and the short-circuit risk of the perovskite cell is reduced.

Description

Technical Field

[0001] This invention belongs to the field of photovoltaic device technology, specifically relating to a perovskite solar cell, its preparation method, and its application. Background Technology

[0002] With the increasing demand for clean energy, perovskite solar cells have attracted much attention as a high-efficiency energy conversion technology. Tin oxide is widely used in the electron transport layer of the cell, playing a crucial conductive role. However, several challenges currently hinder further improvements in the overall performance of perovskite solar cells.

[0003] In existing technologies, the fabrication of perovskite modules often faces the problem of crater-like ridges caused by P3 laser scribing. This is mainly due to the inhomogeneity and hardness differences on the electrode layer surface. During P3 laser scribing, these surface inhomogeneities can cause fluctuations in scribing depth and quality, increasing the risk of short circuits in the module.

[0004] Although some existing technologies attempt to address this problem by adjusting laser parameters or using auxiliary technologies, these methods have some drawbacks: the adjustment of laser parameters may be limited, and the introduction of auxiliary technologies may increase process complexity and cost.

[0005] Therefore, existing technologies still have shortcomings in solving the problem of crater-like bulges. There is an urgent need to design a new perovskite solar cell structure to modify the electrode layer of the cell, thereby improving the stability and consistency of the scribing process and avoiding the problem of crater-like bulges. Summary of the Invention

[0006] To address the shortcomings of existing technologies, the present invention aims to provide a perovskite solar cell, its fabrication method, and its applications. This invention introduces a multi-metal oxide composite soft film onto the surface of the metal electrode, effectively filling surface inhomogeneities and forming a smoother surface. It also enhances the stability and accuracy of the scribing, effectively mitigating the crater-like bulge problem caused by the formation of the third scribing region and reducing the risk of short circuits in perovskite solar cells. Furthermore, this strategy also hinders the corrosion of the cell by water and oxygen in the air, providing strong support for improving the cell's efficiency and stability.

[0007] To achieve this objective, the present invention adopts the following technical solution:

[0008] In a first aspect, the present invention provides a perovskite solar cell, the perovskite solar cell comprising a substrate, a first charge transport layer, a perovskite absorber layer, a second charge transport layer, a metal electrode, and a multi-element metal oxide composite soft film stacked sequentially.

[0009] The perovskite solar cell is provided with a scribing region, which includes a first scribing region, a second scribing region and a third scribing region. The first scribing region penetrates the transparent electrode layer in the substrate in a transverse direction. The second scribing region penetrates the first charge transport layer, the perovskite absorption layer and the second charge transport layer in a transverse direction. The third scribing region penetrates the metal electrode and the multi-element metal oxide composite soft film in a transverse direction.

[0010] This invention introduces a multi-metal oxide composite soft film onto the surface of the metal electrode, which not only effectively fills the surface inhomogeneities and forms a smoother surface, but also enhances the stability and accuracy of the scribing, effectively improving the crater-like bulge problem caused by the formation of the third scribing region and reducing the risk of short circuits in perovskite solar cells. Furthermore, this strategy also hinders the corrosion of the battery by water and oxygen in the air, providing strong support for improving the battery's efficiency and stability.

[0011] In this invention, the multi-metal oxide composite soft film has the characteristics of high transparency, softness and high density, which can significantly improve the crater-like bulges on both sides of the scribing.

[0012] It should be noted that the crater-like bulge refers to the phenomenon where, after laser irradiation of the perovskite cell surface, a series of chemical bonds break, some substances vaporize, and the edges of the laser trench accumulate or bulge.

[0013] It should be noted that multi-metal oxide composite soft film refers to a composite soft film containing at least two metal oxides.

[0014] As a preferred technical solution of the present invention, the thickness of the multi-metal oxide composite soft film is 90-120nm, for example, it can be 90nm, 100nm, 110nm or 120nm.

[0015] In this invention, if the thickness of the multi-metal oxide composite soft film is too small, it cannot achieve the purpose of improving the crater on both sides of the laser groove; if the thickness of the multi-metal oxide composite soft film is too large, it will increase the difficulty of laser scribing.

[0016] As a preferred technical solution of the present invention, the multi-element metal oxide composite soft film is a binary metal oxide composite soft film.

[0017] Preferably, the binary metal oxide composite soft film includes silicon oxide and aluminum oxide.

[0018] It should be noted that, compared to silicon oxide transparent films, alumina transparent films are harder and lack flexibility, thus failing to mitigate the crater-like protrusions on both sides during the scratching process. Therefore, a composite soft film made of silicon oxide and alumina can be prepared, possessing characteristics such as high transparency, flexibility, and high density.

[0019] Preferably, the mass ratio of alumina to silicon oxide is (0-30):(70-100), and is not 0. The range of silicon oxide selection "0-30" can be, for example, 5, 10, 15, 20, 25 or 30, etc., and the range of alumina selection "70-100" can be, for example, 70, 75, 80, 85, 90, 95 or 100, etc.

[0020] In this invention, if the mass ratio of alumina to silicon oxide is too large, that is, if the content of alumina is too high, the prepared film will be too hard and will not be able to improve the purpose of laser scribing.

[0021] As a preferred embodiment of the present invention, the perovskite solar cell further includes a current guide bar and a current bus bar. The current bus bar is disposed on both sides of the perovskite solar cell parallel to the scribed line, and the current guide bar is disposed on one of the other two sides of the perovskite solar cell, forming a cross with the current bus bar.

[0022] Preferably, the second lined area is located between the first lined area and the third lined area.

[0023] As a preferred embodiment of the present invention, the transparent electrode layer includes any one of an ITO layer (indium tin oxide layer), an FTO layer (indium fluorine oxide layer), or an IZO layer (indium tin oxide layer).

[0024] Preferably, the first charge transport layer is a hole transport layer, and the thickness of the hole transport layer is 15-25nm, for example, it can be 15nm, 20nm or 25nm.

[0025] The present invention does not specifically limit the type of hole transport layer; for example, it may be a nickel oxide layer.

[0026] Preferably, the thickness of the perovskite layer is 400-600 nm, for example, it can be 400 nm, 500 nm or 600 nm.

[0027] Preferably, the chemical composition of the perovskite layer is ABX3, wherein A is any one or a combination of at least two of formamidinium ions, methylamine ions, or cesium ions, B is lead ions and / or tin ions, and X is any one or a combination of at least two of chloride ions, bromide ions, or iodide ions.

[0028] Preferably, the second charge transport layer is an electron transport layer, and the thickness of the electron transport layer is 15-25 nm, for example, it can be 15 nm, 20 nm or 25 nm.

[0029] It should be noted that the present invention does not limit the type of electron transport layer; for example, it can be C. 60 wait.

[0030] Preferably, the metal electrode includes any one of a copper electrode, a gold electrode, or a silver electrode.

[0031] Preferably, the thickness of the metal electrode is 100-120 nm, for example, it can be 100 nm, 110 nm or 120 nm.

[0032] In a preferred embodiment of the present invention, a protective layer is further disposed between the second charge transport layer and the metal electrode, the protective layer comprising SnO. x layer.

[0033] In this invention, the protective layer serves to protect the bottom perovskite from sputtering damage by the top electrode.

[0034] Preferably, the thickness of the modification layer is 15-25 nm, for example, it can be 15 nm, 20 nm or 25 nm.

[0035] In a second aspect, the present invention provides a method for preparing a perovskite solar cell as described in the first aspect, the method comprising the following steps:

[0036] (1) The transparent electrode layer in the substrate is scribed to obtain the first scribing area;

[0037] (2) A first charge transport layer, a perovskite absorption layer and a second charge transport layer are sequentially prepared on the surface of the transparent electrode layer. Then, the second charge transport layer is scribed and penetrates the first charge transport layer, the perovskite absorption layer and the second charge transport layer in the transverse direction to obtain a second scribing area.

[0038] (3) A metal electrode and a multi-element metal oxide composite soft film are sequentially prepared on the surface of the second charge transport layer. Then, the multi-element metal oxide composite soft film is scribed and penetrates the metal electrode and the multi-element metal oxide composite soft film in the transverse direction.

[0039] The preparation method provided by the present invention has the advantages of being simple, economical and easy to implement. By introducing a multi-metal oxide composite soft film, the sensitivity of the scratching in step (3) to different hardness or high and low differences can be reduced, making the scratching smoother and improving the consistency and accuracy of the scratching.

[0040] As a preferred embodiment of the present invention, the multi-element metal oxide composite soft film is a binary metal oxide composite soft film, and the preparation method of the binary metal oxide composite soft film includes the following steps:

[0041] A vacuum is drawn, and each metal oxide source is bombarded with an electron beam to obtain the binary metal oxide composite soft film.

[0042] It should be noted that the present invention controls the ratio of oxides by controlling the intensity of the current of each electron beam and adjusting the magnetic field to control the size of the focal region of the electron beam.

[0043] Preferably, after evacuation, the vacuum level in the reaction chamber is ≤5×10⁻⁶. -4 Pa, for example, could be 5 × 10 -4 Pa, 1×10 -4 Pa, 5×10 -5 Pa or 1×10 -5 Pa, etc.

[0044] Preferably, the electron beam current of each metal oxide source during electron beam bombardment is independently 50-150A, for example, it can be 50A, 75A, 100A, 125A or 150A.

[0045] In this invention, by precisely controlling process parameters and monitoring and adjusting parameters such as electron beam current, the uniformity and stability of the composite soft film can be ensured.

[0046] As a preferred technical solution of the present invention, the preparation method includes the following steps:

[0047] (1) Laser scribing (e.g., infrared nanosecond laser scribing) is performed on the transparent electrode layer in the substrate to obtain the first scribing area;

[0048] (2) A hole transport layer is deposited on the surface of the transparent electrode layer by magnetron sputtering and annealed at 80-100℃ (e.g., 80℃, 90℃ or 100℃, etc.) for 10-20 min (e.g., 10 min, 15 min or 20 min, etc.);

[0049] (3) A perovskite absorption layer is deposited on the surface of the hole transport layer using a solution method and then annealed at 120-170℃ (e.g., 120℃, 150℃ or 170℃, etc.) for 18-22 min (e.g., 18 min, 20 min or 22 min, etc.).

[0050] (4) An electron transport layer is deposited on the surface of the perovskite absorber layer using a thermal evaporation method, followed by the deposition of SnO on the surface of the electron transport layer using an atomic layer deposition method. xThe layers are then laser-etched (e.g., using a green picosecond laser), penetrating laterally through the hole charge transport layer, perovskite absorber layer, electron transport layer, and SnO. x Layer, to obtain the second lined area;

[0051] (5) In the SnO x Metal electrodes are deposited on the surface of the layer. Then, busbars are attached to both sides of the component along the direction of the laser line, and a guide bar is attached to one of the other two sides of the component, forming a cross between the guide bar and the busbar. A binary metal oxide composite soft film, comprising SiO2 and Al2O3, is then deposited on the surface of the metal electrodes using an electron beam method. The electron beam method includes the following steps:

[0052] Electron beam source I is SiO2, electron beam source II is Al2O3, and the vacuum level in the reaction chamber is ≤5×10⁻⁶. -4 Pa is bombarded simultaneously by dual-source electron beams. The current of electron beam source I is 100-150A (e.g., 100A, 120A, 140A or 150A, etc.), and the current of electron beam source II is 50-100A (e.g., 50A, 75A or 100A, etc.). The coating time is 5-10min (e.g., 5min, 6min, 7min, 8min, 9min or 10min, etc.).

[0053] (6) Laser scribing (e.g., green picosecond laser scribing) is performed on the binary metal oxide composite soft film and the scribing is performed along the horizontal line through the metal electrode and the binary metal oxide composite soft film.

[0054] Thirdly, the present invention provides a battery assembly comprising the perovskite solar cell as described in the first aspect.

[0055] The numerical range described in this invention includes not only the point values ​​listed above, but also any point values ​​within the numerical ranges not listed above. Due to space limitations and for the sake of brevity, this invention will not exhaustively list all the specific point values ​​included in the range.

[0056] Compared with the prior art, the present invention has the following beneficial effects:

[0057] This invention introduces a multi-metal oxide composite soft film onto the surface of the metal electrode. This not only effectively fills the surface inhomogeneities, forming a smoother surface and reducing the impact of surface inhomogeneity on the scribing process, but also enhances the stability, consistency, and accuracy of the scribing. It effectively improves the crater-like bulge problem caused by the formation of the third scribing region, reducing the risk of short circuits in perovskite solar cells. Furthermore, this strategy also hinders the corrosion of the cell by water and oxygen in the air, further improving the performance and lifespan of perovskite solar cells.

[0058] (2) The preparation method provided by the present invention has the advantages of being simple, economical and easy to implement, which provides strong support for improving the efficiency and stability of batteries. Attached Figure Description

[0059] Figure 1 This is a schematic diagram of the structure of the perovskite solar cell prepared in Example 1 of the present invention.

[0060] Among them, 1-FTO layer; 2-hole transport layer; 3-perovskite absorber layer; 4-electron transport layer; 5-copper electrode; 6-binary metal oxide composite soft film; P1-first scribed region; P2-second scribed region; P3-third scribed region. Detailed Implementation

[0061] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0062] Example 1

[0063] This embodiment provides a perovskite solar cell, the structural schematic of which is shown below. Figure 1 As shown, the perovskite solar cell includes a substrate, a hole transport layer 2, a perovskite absorber layer 3, an electron transport layer 4, a copper electrode 5, and a binary metal oxide composite soft film 6, which are stacked sequentially.

[0064] The substrate is composed of transparent glass and an FTO layer 1;

[0065] The perovskite solar cell is provided with scribing regions, which include a first scribing region P1, a second scribing region P2 and a third scribing region P3. The first scribing region P1 penetrates the FTO layer 1 in the substrate laterally, the second scribing region P2 penetrates the hole transport layer 2, the perovskite absorber layer 3 and the electron transport layer 4 laterally, and the third scribing region P3 penetrates the copper electrode 5 and the binary metal oxide composite soft film 6 along a horizontal line.

[0066] The second scribed area P2 is located between the first scribed area P1 and the third scribed area P3;

[0067] The thickness of the binary metal oxide composite soft film 6 is 110 nm. The binary metal oxide composite soft film 6 includes silicon oxide and aluminum oxide, and the mass ratio of aluminum oxide to silicon oxide is 30:70.

[0068] The hole transport layer 2 is a nickel oxide layer with a thickness of 20 nm;

[0069] The perovskite layer is Cs 0.17 FA 0.83 PbI3, with a thickness of 500 nm;

[0070] The electron transport layer 4 is C 60 The layer is 20nm thick;

[0071] The thickness of the copper electrode 5 is 110 nm;

[0072] The perovskite solar cell further includes a current guide bar and a current bus bar. The current bus bar is disposed on both sides of the perovskite solar cell parallel to the scribed line, and the current guide bar is disposed on one of the other two sides of the perovskite solar cell, forming a cross with the current bus bar.

[0073] This embodiment also provides a method for preparing the above-mentioned perovskite solar cell, the method comprising the following steps:

[0074] (1) The FTO layer 1 in the substrate is scribed with an infrared nanosecond laser to obtain the first scribing region P1;

[0075] (2) A nickel oxide layer was deposited on the surface of the FTO layer 1 by magnetron sputtering and annealed at 90°C for 15 min.

[0076] (3) A perovskite absorber layer 3 was deposited on the surface of the nickel oxide layer by solution method and annealed at 150°C for 20 min.

[0077] (4) C is deposited on the surface of the perovskite absorber layer 3 by thermal evaporation. 60 The layer was deposited at a rate of 5 A / s for 40 s, followed by green picosecond laser scribing that traversed laterally through the nickel oxide layer, perovskite absorber layer 3, and C. 60 Layer, to obtain the second lined region P2;

[0078] (5) In the C 60A copper electrode 5 is deposited on the surface of the layer. Then, busbars are attached to both sides of the component along the direction of the laser line, and a guide bar is attached to one of the other two sides of the component, so that the guide bar and the busbar form a cross. Then, a binary metal oxide composite soft film 6 is deposited on the surface of the copper electrode using an electron beam method, which includes the following steps:

[0079] Electron beam source I is SiO2 with a purity of 99.9%, and electron beam source II is Al2O3 with a purity of 99.9%. The vacuum level in the reaction chamber is 4 × 10⁻⁶. -4 Pa is bombarded simultaneously by dual-source electron beams. The current of electron beam source I is 110A and the current of electron beam source II is 90A, so that the mass ratio of aluminum oxide to silicon oxide in the binary metal oxide composite soft film is 30:70 and the coating time is 8min.

[0080] (6) Perform green picosecond laser scribing on the binary metal oxide composite soft film 6 and traverse the copper electrode 5 and the binary metal oxide composite soft film 6 in a transverse direction.

[0081] Example 2

[0082] The difference between this embodiment and embodiment 1 is that the current of electron beam source II in step (5) is 80A, so that the mass ratio of aluminum oxide and silicon oxide in the binary metal oxide composite soft film is 20:80.

[0083] The remaining preparation methods and parameters are consistent with those in Example 1.

[0084] Example 3

[0085] The difference between this embodiment and embodiment 1 is that the current of electron beam source II in step (5) is 70A, so that the mass ratio of aluminum oxide to silicon oxide in the binary metal oxide composite soft film is 10:90.

[0086] The remaining preparation methods and parameters are consistent with those in Example 1.

[0087] Example 4

[0088] This embodiment provides a perovskite solar cell, which includes a substrate, a hole transport layer, a perovskite absorber layer, an electron transport layer, a copper electrode, and a binary metal oxide composite soft film stacked sequentially.

[0089] The substrate is composed of transparent glass and an FTO layer;

[0090] The perovskite solar cell is provided with a scribing region, which includes a first scribing region, a second scribing region and a third scribing region. The first scribing region penetrates the FTO layer in the substrate in a transverse direction. The second scribing region penetrates the hole transport layer, the perovskite absorption layer and the electron transport layer in a transverse direction. The third scribing region penetrates the copper electrode and the binary metal oxide composite soft film in a transverse direction.

[0091] The second lined area is positioned between the first lined area and the third lined area;

[0092] The thickness of the binary metal oxide composite soft film is 90 nm, and the binary metal oxide composite soft film includes silicon oxide and aluminum oxide, with a mass ratio of aluminum oxide to silicon oxide of 20:80.

[0093] The hole transport layer is a nickel oxide layer with a thickness of 15 nm;

[0094] The perovskite layer is Cs 0.17 FA 0.83 PbI3, with a thickness of 400 nm;

[0095] The electron transport layer is C. 60 The layer is 15nm thick;

[0096] The thickness of the copper electrode is 100 nm;

[0097] The perovskite solar cell further includes a current guide bar and a current bus bar. The current bus bar is disposed on both sides of the perovskite solar cell parallel to the scribed line, and the current guide bar is disposed on one of the other two sides of the perovskite solar cell, forming a cross with the current bus bar.

[0098] This embodiment also provides a method for preparing the above-mentioned perovskite solar cell, the method comprising the following steps:

[0099] (1) The FTO layer in the substrate is scribed with an infrared nanosecond laser to obtain the first scribing region;

[0100] (2) A nickel oxide layer was deposited on the surface of the FTO layer by magnetron sputtering and annealed at 80°C for 20 min.

[0101] (3) A perovskite absorber layer was deposited on the surface of the nickel oxide layer by solution method and annealed at 120°C for 22 min.

[0102] (4) C is deposited on the surface of the perovskite absorber layer using a thermal evaporation method. 60 The layers were deposited at a rate of 5 Å / s for 30 s, followed by green picosecond laser scribing that traversed laterally through the nickel oxide layer, perovskite absorber layer, and C.60 Layer, to obtain the second lined area;

[0103] (5) In the C 60 Copper electrodes are deposited on the surface of the layer. Then, busbars are attached to both sides of the component along the direction of the laser line, and a guide bar is attached to one of the other two sides of the component, forming a cross between the guide bar and the busbar. A binary metal oxide composite soft film is then deposited on the surface of the copper electrodes using an electron beam method, which includes the following steps:

[0104] Electron beam source I is SiO2 with a purity of 99.9%, and electron beam source II is Al2O3 with a purity of 99.9%. The vacuum level in the reaction chamber is 4 × 10⁻⁶. -4 Pa was bombarded simultaneously by dual-source electron beams, with electron beam source I having a current of 110A and electron beam source II having a current of 80A, and the coating time being 8 minutes.

[0105] (6) Perform green picosecond laser scribing on the binary metal oxide composite soft film and penetrate the copper electrode and the binary metal oxide composite soft film along the horizontal line.

[0106] Example 5

[0107] This embodiment provides a perovskite solar cell, which includes a substrate, a hole transport layer, a perovskite absorber layer, an electron transport layer, a copper electrode, and a binary metal oxide composite soft film stacked sequentially.

[0108] The substrate is composed of transparent glass and an FTO layer;

[0109] The perovskite solar cell is provided with a scribing region, which includes a first scribing region, a second scribing region and a third scribing region. The first scribing region penetrates the FTO layer in the substrate in a transverse direction. The second scribing region penetrates the hole transport layer, the perovskite absorption layer and the electron transport layer in a transverse direction. The third scribing region penetrates the copper electrode and the binary metal oxide composite soft film in a transverse direction.

[0110] The second lined area is positioned between the first lined area and the third lined area;

[0111] The thickness of the binary metal oxide composite soft film is 120 nm, and the binary metal oxide composite soft film includes silicon oxide and aluminum oxide, with a mass ratio of aluminum oxide to silicon oxide of 20:80.

[0112] The hole transport layer is a nickel oxide layer with a thickness of 25 nm;

[0113] The perovskite layer is Cs 0.17 FA0.83 PbI3, with a thickness of 600 nm;

[0114] The electron transport layer is C. 60 The layer has a thickness of 25nm;

[0115] The thickness of the copper electrode is 120 nm;

[0116] The perovskite solar cell further includes a current guide bar and a current bus bar. The current bus bar is disposed on both sides of the perovskite solar cell parallel to the scribed line, and the current guide bar is disposed on one of the other two sides of the perovskite solar cell, forming a cross with the current bus bar.

[0117] This embodiment also provides a method for preparing the above-mentioned perovskite solar cell, the method comprising the following steps:

[0118] (1) The FTO layer in the substrate is scribed with an infrared nanosecond laser to obtain the first scribing region;

[0119] (2) A nickel oxide layer was deposited on the surface of the FTO layer by magnetron sputtering and annealed at 100°C for 10 min.

[0120] (3) A perovskite absorber layer was deposited on the surface of the nickel oxide layer by solution method and annealed at 170°C for 22 min.

[0121] (4) C is deposited on the surface of the perovskite absorber layer using a thermal evaporation method. 60 The layers were deposited at a rate of 5 Å / s for 50 s, followed by green picosecond laser scribing that traversed laterally through the nickel oxide layer, perovskite absorber layer, and C. 60 Layer, to obtain the second lined area;

[0122] (5) In the C 60 Copper electrodes are deposited on the surface of the layer. Then, busbars are attached to both sides of the component along the direction of the laser line, and a guide bar is attached to one of the other two sides of the component, forming a cross between the guide bar and the busbar. A binary metal oxide composite soft film is then deposited on the surface of the copper electrodes using an electron beam method, which includes the following steps:

[0123] Electron beam source I is SiO2 with a purity of 99.9%, and electron beam source II is Al2O3 with a purity of 99.9%. The vacuum level in the reaction chamber is 4 × 10⁻⁶. -4 Pa was bombarded simultaneously by dual-source electron beams, with electron beam source I having a current of 110A and electron beam source II having a current of 80A, and the coating time being 8 minutes.

[0124] (6) Perform green picosecond laser scribing on the binary metal oxide composite soft film and penetrate the copper electrode and the binary metal oxide composite soft film along the horizontal line.

[0125] Example 6

[0126] The difference between this embodiment and Embodiment 1 is that C 60 A 20nm thick SnO layer is also disposed between the layer and the copper electrode layer. x The layer, namely the C deposited in step (4) 60 SnO was deposited using ALD atomic layer deposition after the first layer. x layer.

[0127] The remaining preparation methods and parameters are consistent with those in Example 2.

[0128] Example 7

[0129] The difference between this embodiment and embodiment 6 is that the thickness of the binary metal oxide composite soft film is 50 nm by adjusting the coating time in step (5).

[0130] The remaining preparation methods and parameters are consistent with those in Example 6.

[0131] Example 8

[0132] The difference between this embodiment and embodiment 6 is that the thickness of the binary metal oxide composite soft film is 150 nm by adjusting the coating time in step (5).

[0133] The remaining preparation methods and parameters are consistent with those in Example 6.

[0134] Example 9

[0135] The difference between this embodiment and embodiment 6 is that, by adjusting the current of electron beam source I or electron beam source II in step (5), the mass ratio of aluminum oxide and silicon oxide in the binary metal oxide composite soft film is 50:50.

[0136] The remaining preparation methods and parameters are consistent with those in Example 6.

[0137] Comparative Example 1

[0138] The difference between this comparative example and Example 6 is that the current of the electron beam source I in step (5) is adjusted to 0A, so that the binary metal oxide composite soft film is replaced with an aluminum oxide film.

[0139] The remaining preparation methods and parameters are consistent with those in Example 6.

[0140] Comparative Example 2

[0141] The difference between this comparative example and Example 6 is that the current of the electron beam source II in step (5) is adjusted to 0A, so that the binary metal oxide composite soft film is replaced with a silicon oxide film.

[0142] The remaining preparation methods and parameters are consistent with those in Example 6.

[0143] Performance testing

[0144] The photoelectric performance and stability of the perovskite solar cells prepared in the above embodiments and comparative examples were tested.

[0145] The conditions for photoelectric performance testing were as follows: the effective area of ​​each battery was 1 cm². 2 AM1.5, 1000W / m 2 , 25±2℃.

[0146] Stability test conditions: nitrogen environment, temperature 25℃, relative humidity ≤10%, continuous light exposure time 1000h.

[0147] The test results are shown in Table 1.

[0148] Table 1

[0149]

[0150] analyze:

[0151] As shown in the table above, the present invention can effectively improve the problem of crater-like bulges caused by scribing by introducing a multi-metal oxide composite soft film on the surface of the metal electrode. Based on this, the perovskite solar cell has excellent photoelectric conversion efficiency and lifetime.

[0152] As can be seen from Examples 1 and 6, the addition of a protective layer helps to protect the bottom perovskite from sputtering damage. It can also act as a hole blocking layer to block holes from the perovskite and allow only electrons to pass through, thereby achieving excellent efficiency and stability.

[0153] As can be seen from Examples 6 and 7-8, if the thickness of the binary metal oxide composite soft film is too small, it cannot improve the sensitivity of laser scribing on the electrode surface, and will still cause bulges on both sides of the laser trench, forming craters, which will reduce the device performance; if the thickness of the binary metal oxide composite soft film is too large, it will affect the accuracy of laser scribing, which may lead to inaccurate laser scribing positioning and affect the device performance.

[0154] As can be seen from Examples 6 and 9, if the mass ratio of aluminum oxide to silicon oxide in the binary metal oxide composite soft film is too large, the prepared composite film layer will be too hard, which will prevent it from achieving the purpose of improving the bulge on both sides of the laser scribing, thereby reducing the device performance.

[0155] As can be seen from Example 1 and Comparative Examples 1-2, if the binary metal oxide composite soft film is replaced with an aluminum oxide film, the prepared composite film layer will be too hard, which will prevent it from improving the bulge on both sides of the laser scribing and thus reduce the device performance. If the binary metal oxide composite soft film is replaced with a silicon oxide film, the prepared composite film layer will be too soft, which will affect the accuracy of the laser scribing, and the laser scribing positioning will be inaccurate, thus affecting the device performance.

[0156] The applicant declares that the present invention is illustrated by the above embodiments, but the present invention is not limited to the above process steps, that is, it does not mean that the present invention must rely on the above process steps to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent substitutions of the raw materials used in the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A perovskite solar cell, characterized in that, The perovskite solar cell comprises a substrate, a first charge transport layer, a perovskite absorber layer, a second charge transport layer, a metal electrode, and a multi-metal oxide composite soft film stacked sequentially. The perovskite solar cell is provided with a scribing region, which includes a first scribing region, a second scribing region and a third scribing region. The first scribing region penetrates the transparent electrode layer in the substrate in a transverse direction. The second scribing region penetrates the first charge transport layer, the perovskite absorption layer and the second charge transport layer in a transverse direction. The third scribing region penetrates the metal electrode and the multi-element metal oxide composite soft film in a transverse direction.

2. The perovskite solar cell according to claim 1, characterized in that, The thickness of the multi-metal oxide composite soft film is 90-120 nm.

3. The perovskite solar cell according to claim 1 or 2, characterized in that, The multi-component metal oxide composite soft film is a binary metal oxide composite soft film; Preferably, the binary metal oxide composite soft film comprises silicon oxide and aluminum oxide; Preferably, the mass ratio of alumina to silicon oxide is (0-30):(70-100), and is not 0.

4. The perovskite solar cell according to any one of claims 1-3, characterized in that, The perovskite solar cell further includes a current guide bar and a current bus bar. The current bus bar is disposed on both sides of the perovskite solar cell parallel to the scribed line. The current guide bar is disposed on one of the other two sides of the perovskite solar cell and forms a cross with the current bus bar. Preferably, the second lined area is located between the first lined area and the third lined area.

5. The perovskite solar cell according to any one of claims 1-4, characterized in that, The transparent electrode layer includes any one of an ITO layer, an FTO layer, or an IZO layer; Preferably, the first charge transport layer is a hole transport layer, and the thickness of the hole transport layer is 15-25 nm; Preferably, the thickness of the perovskite layer is 400-600 nm; Preferably, the second charge transport layer is an electron transport layer, and the thickness of the electron transport layer is 15-25 nm; Preferably, the metal electrode includes any one of a copper electrode, a gold electrode, or a silver electrode; Preferably, the thickness of the metal electrode is 100-120 nm.

6. The perovskite solar cell according to any one of claims 1-5, characterized in that, A protective layer, comprising SnO, is further disposed between the second charge transport layer and the metal electrode. x layer; Preferably, the thickness of the protective layer is 15-25 nm.

7. A method for preparing a perovskite solar cell according to any one of claims 1-6, characterized in that, The preparation method includes the following steps: (1) The transparent electrode layer in the substrate is scribed to obtain the first scribing area; (2) A first charge transport layer, a perovskite absorption layer and a second charge transport layer are sequentially prepared on the surface of the transparent electrode layer. Then, the second charge transport layer is scribed and penetrates the first charge transport layer, the perovskite absorption layer and the second charge transport layer in the transverse direction to obtain a second scribing area. (3) A metal electrode and a multi-element metal oxide composite soft film are sequentially prepared on the surface of the second charge transport layer. Then, the multi-element metal oxide composite soft film is scribed and penetrates the metal electrode and the multi-element metal oxide composite soft film in the transverse direction.

8. The preparation method according to claim 7, characterized in that, The multi-component metal oxide composite soft film is a binary metal oxide composite soft film, and the preparation method of the binary metal oxide composite soft film includes the following steps: Vacuum was drawn, and electron beams were used to bombard each metal oxide source to obtain the binary metal oxide composite soft film. The electron beam current for each of the metal oxide sources during electron beam bombardment is independently 50-150A.

9. The preparation method according to claim 7, characterized in that, The preparation method includes the following steps: (1) Laser scribing is performed on the transparent electrode layer in the substrate to obtain the first scribing region; (2) A hole transport layer is deposited on the surface of the transparent electrode layer by magnetron sputtering and annealed at 80-100℃ for 10-20 min. (3) A perovskite absorption layer is deposited on the surface of the hole transport layer using a solution method and then annealed at 120-170℃ for 18-22 min. (4) An electron transport layer is deposited on the surface of the perovskite absorber layer using a thermal evaporation method, followed by the deposition of SnO on the surface of the electron transport layer using an atomic layer deposition method. x The layers are then laser-etched, penetrating laterally through the hole charge transport layer, perovskite absorber layer, electron transport layer, and SnO layer. x Layer, to obtain the second lined area; (5) In the SnO x Metal electrodes are deposited on the surface of the layer. Then, busbars are attached to both sides of the component along the direction of the laser line, and a guide bar is attached to one of the other two sides of the component, forming a cross between the guide bar and the busbar. A binary metal oxide composite soft film, comprising SiO2 and Al2O3, is then deposited on the surface of the metal electrodes using an electron beam method. The electron beam method includes the following steps: Electron beam source I is SiO2, electron beam source II is Al2O3, and the vacuum level in the reaction chamber is ≤5×10⁻⁶. -4 Pa is bombarded simultaneously by dual-source electron beams. The current of electron beam source I is 100-150A, the current of electron beam source II is 50-100A, and the coating time is 5-10min. (6) Laser scribing is performed on the binary metal oxide composite soft film, and the scribing extends laterally through the metal electrode and the binary metal oxide composite soft film.

10. A battery assembly, characterized in that, The battery assembly includes a perovskite solar cell as described in any one of claims 1-6.

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