Heating plate, control method and process chamber

Abstract

The invention provides a heating plate, a process chamber and a heating plate control method. The heating disc comprises a heating wire and a first filtering loop. The heating wire is connected with a power frequency power supply, and the power frequency power supply provides a power frequency signal for the heating wire so as to heat the heating wire. The first end of the first filtering loop is connected with the heating wire, and the second end of the first filtering loop is grounded and used for blocking the power frequency signal. The first filtering loop comprises an adjustable capacitor, and the ground impedance of the heating wire is adjusted by changing the capacitance value of the adjustable capacitor so as to adjust the electric field distribution formed on the edge of the heating plate by a radio frequency signal provided by a radio frequency power supply.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a heating plate, a process chamber, and a heating plate control method. Background Technology

[0002] In the field of semiconductor device manufacturing, plasma-enhanced chemical vapor deposition (PECVD) equipment is a key piece of equipment for achieving high-precision thin film deposition. The heating plate, as the lower electrode of the equipment, plays a dual core role in the thin film deposition process, significantly impacting the process outcome. On one hand, the heating plate obtains alternating current through an external power supply system, enabling precise heating and providing a stable temperature environment that meets process requirements, ensuring the orderly conduct of the deposition reaction. On the other hand, the heating plate must bear the radio frequency energy output from the RF power supply, working in conjunction with the equipment cavity and the spray plate (upper electrode) to construct the plasma reaction region, providing the necessary conditions for plasma generation required for thin film deposition.

[0003] During the actual operation of PECVD equipment, the radio frequency (RF) energy output from the RF power supply is applied to the surface of the ceramic heating plate via a spray plate. Most of the RF current can be smoothly guided to the RF ground through the RF grid configured in the equipment, ensuring effective conduction and recovery of RF energy. However, due to the electromagnetic coupling effect, a small portion of the RF energy still breaks through the normal conduction path, intrudes into the heating wire structure inside the heating plate, and enters the heating system along the power supply wires of the heating wire, forming a potential source of RF interference. At the same time, in order to adapt to the carrying requirements of wafers of different sizes and the assembly process of the equipment cavity, the mechanical structure of the heating plate inevitably has abrupt shape characteristics, such as the edge transition of the wafer carrying area and the connection interface between the heating plate and the side wall of the cavity. In addition, the main body of the heating plate is made of ceramic material with excellent insulation properties, while the internal heating wire is made of conductive metal material. There are also various connection structures of different materials between the heating wire and the ceramic body, and between the heating plate and the external connecting parts, which makes the heating plate as a whole have obvious material abrupt characteristics.

[0004] The aforementioned structural and material abrupt changes directly disrupt the uniform propagation path of the radio frequency electric field within the cavity. When the electric field propagates to the edge region of the heating plate, these abrupt changes in shape and material lead to abnormal changes in the direction and intensity of the electric field propagation, causing significant electric field abrupt changes and ultimately resulting in severe electric field distortion at the edge of the heating plate. This edge electric field distortion directly affects the plasma within the cavity, causing the plasma density and reactivity at the wafer edge to differ significantly from the central region. This triggers an "edge effect" during thin film deposition, resulting in a noticeable step-like difference in the thickness of the thin film deposited at the wafer edge, severely disrupting the overall uniformity of the wafer's thin film. Furthermore, the radio frequency energy coupled to the heating system interferes with the normal signal acquisition and control logic of the temperature control system, causing the actual temperature of the heating plate to deviate from the set value, increasing temperature fluctuations, reducing heating accuracy and process repeatability, and failing to meet the manufacturing requirements of high-precision semiconductor devices.

[0005] In the existing technology, there are only single-function filtering components for radio frequency interference. They can only suppress radio frequency energy intruding into the heating system to a limited extent, but cannot solve the problem of uneven electric field distribution caused by electric field distortion at the edge of the heating plate. It is difficult to effectively adjust the electric field distribution formed by the radio frequency signal provided by the radio frequency power supply at the edge of the heating plate, and cannot fundamentally solve the core problems of poor film uniformity and process repeatability.

[0006] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a heating plate technology to adjust the electric field distribution at the edge of the heating plate, thereby forming a uniformly distributed electric field in the edge region of the heating plate, so as to improve the uniformity and process repeatability of wafer thin film deposition on the heating plate. Summary of the Invention

[0007] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0008] To overcome the aforementioned deficiencies in the prior art, the present invention provides a heating plate, a process chamber, and a heating plate control method for adjusting the electric field distribution at the edge of the heating plate, thereby forming a uniformly distributed electric field in the edge region of the heating plate to improve the uniformity and process repeatability of wafer thin film deposition on the heating plate.

[0009] Specifically, according to a first aspect of the present invention, a heating plate includes: a heating wire connected to a power frequency power supply, the power frequency power supply providing a power frequency signal to the heating wire to heat the heating wire; and a first filtering circuit, a first end of which is connected to the heating wire and a second end of which is grounded to block the power frequency signal, wherein the first filtering circuit includes an adjustable capacitor, and the impedance to ground of the heating wire is adjusted by changing the capacitance value of the adjustable capacitor to adjust the electric field distribution formed by the radio frequency signal provided by the radio frequency power supply at the edge of the heating plate.

[0010] Furthermore, in some embodiments, the first filter circuit further includes a first inductor connected in series with the adjustable capacitor, and the impedance to ground of the first filter circuit is expressed as: Where Z is the impedance value of the first filter circuit, ω is the frequency value of the radio frequency signal, L is the inductance value of the first inductor, and C is the capacitance value of the adjustable capacitor.

[0011] Furthermore, in some embodiments, the power frequency power supply provides the power frequency signal to the heating wire via a second filter circuit, wherein the second filter circuit blocks the radio frequency signal.

[0012] Furthermore, in some embodiments, the second filter circuit includes: at least one parallel resonant circuit for blocking the radio frequency signal; and a first capacitor, connected at an angle to the at least one parallel resonant circuit, for adjusting the bandwidth of the first filter circuit.

[0013] Furthermore, in some embodiments, the second filter circuit includes: at least one parallel resonant circuit, including a second inductor and a second capacitor connected in parallel, wherein the resonant frequencies of the second inductor and the second capacitor are within the neighborhood of the radio frequency signal, for blocking the radio frequency signal; and a third capacitor, wherein a first terminal is connected to the power frequency power supply and a second terminal is grounded, for transmitting the radio frequency signal coupled to the second filter circuit to the ground.

[0014] Furthermore, in some embodiments, the second filter circuit includes: at least one third inductor disposed on the general path of the second filter circuit, wherein the impedance of the at least one third inductor in the frequency band of the radio frequency signal is greater than a preset impedance threshold to block the radio frequency signal; and a fourth capacitor, the first end of which is connected to the power frequency power supply and the second end of which is grounded, for transmitting the radio frequency signal coupled to the second filter circuit to the ground.

[0015] Furthermore, in some embodiments, the heating wire is made of a first metal material, and the connecting wire between the heating wire and the power frequency power supply is made of a second metal material, wherein the conductivity of the first metal material is lower than that of the second metal material, and the heating plate further includes: at least one nickel rod disposed at the input end and / or output end of the heating wire to reduce the contact resistance between the heating wire and the connecting wire.

[0016] Furthermore, in some embodiments, the heating plate further includes a shielding mesh disposed above the heating wire for filtering the radio frequency signal above the heating wire.

[0017] Furthermore, the process chamber provided according to the second aspect of the present invention includes: a heating plate as described in any one of the first aspects of the present invention, wherein a heating wire is provided; a power frequency power supply for providing a power frequency signal to the heating wire to heat the heating wire; a radio frequency power supply for providing a radio frequency signal; and a spray head disposed above the heating plate, wherein a radio frequency electrode is provided for forming in-situ plasma between the spray head and the heating plate under the excitation of the radio frequency signal.

[0018] Furthermore, the heating plate control method provided by the third aspect of the present invention includes the following steps: obtaining the thin film thickness distribution of the wafer deposited on the heating plate as described in any one of the first aspects of the present invention, and the parasitic parameters corresponding to the heating plate structure; changing the capacitance value of the adjustable capacitor of the heating plate according to the thin film thickness distribution and the parasitic parameters, so as to adjust the impedance to ground of the heating wire, thereby adjusting the electric field distribution formed by the radio frequency power supply at the edge of the heating plate. Attached Figure Description

[0019] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related properties or features may have the same or similar reference numerals.

[0020] Figure 1A The diagram shows the impedance of the heating wire to ground versus the electric field distribution at the edge of the heating plate.

[0021] Figure 1B The graph shows the distribution of power density of heating wire impedance to ground versus dielectric loss at the edge of the heating plate.

[0022] Figure 2 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0023] Figures 3A-3C A circuit diagram of a filter circuit provided according to some embodiments of the present invention is shown.

[0024] Figure 4 A schematic diagram of the ground impedance adjustment range provided according to some embodiments of the present invention is shown.

[0025] Figure label:

[0026] 1. Heating plate

[0027] 10 Heating wires

[0028] 20 shielding nets

[0029] 30. Power frequency power supply

[0030] 40 RF power supply

[0031] 50 spray heads

[0032] 60 Input Terminal

[0033] 70 Output terminal

[0034] Inductors L1, L2, L31, L32

[0035] Capacitors C0, C1, C2, C3, and C4 Detailed Implementation

[0036] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0037] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0038] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0039] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0040] As mentioned above, in the prior art, there are only single-function filtering components for radio frequency interference. They can only suppress radio frequency energy intruding into the heating system to a limited extent, but cannot solve the problem of uneven electric field distribution caused by electric field distortion at the edge of the heating plate. It is difficult to effectively adjust the electric field distribution formed by the radio frequency signal provided by the radio frequency power supply at the edge of the heating plate, and cannot fundamentally solve the core problems of poor film uniformity and process repeatability.

[0041] Furthermore, when the absolute value of the RF grid impedance is greater than the absolute value of the heating wire impedance, the heating wire will experience current shunting, causing some of the energy in the edge region to be consumed by the heating plate, resulting in a lower plasma density at the edge. Conversely, when the absolute value of the RF grid impedance is less than the absolute value of the heating wire impedance, and the current shunting effect of the heating wire gradually weakens until it approaches zero, no energy is consumed inside the heating plate, and the plasma density at the wafer edge will be higher. In addition, the presence of the wafer affects the voltage division state of the electric field; the grid voltage below the wafer is lower, while the grid voltage in the area not covered by the wafer is higher.

[0042] Please refer to Figures 1A-1B , Figure 1A The diagram shows the impedance of the heating wire to ground versus the electric field distribution at the edge of the heating plate. Figure 1B The graph shows the distribution of power density of heating wire impedance to ground versus dielectric loss at the edge of the heating plate.

[0043] like Figures 1A-1B As shown, different impedances of the heating wire to ground result in different electric field strengths 1 mm above the wafer. Dielectric loss simulates the power consumed by the plasma; higher power consumption leads to higher energy absorption and more complete dissociation, resulting in higher plasma density. Therefore, changes in the heating wire impedance have a more significant impact on the electric field changes in the edge region.

[0044] To overcome the aforementioned deficiencies in the prior art, the present invention provides a heating plate, a process chamber, and a heating plate control method for adjusting the electric field distribution at the edge of the heating plate, thereby forming a uniformly distributed electric field in the edge region of the heating plate to improve the uniformity and process repeatability of wafer thin film deposition on the heating plate.

[0045] In some non-limiting embodiments, the heating plate provided in the first aspect of the present invention can be configured in the process chamber provided in the second aspect of the present invention, and the heating plate control method provided in the third aspect of the present invention can be implemented based on the heating plate provided in the first aspect of the present invention. Specifically, the heating plate is equipped with a memory and a controller. The memory includes, but is not limited to, a computer-readable storage medium storing computer instructions thereon. The controller is connected to the memory and configured to execute the computer instructions stored in the memory to implement the heating plate control method provided in the third aspect of the present invention.

[0046] Please refer to the details. Figure 2 , Figure 2 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0047] like Figure 2 As shown, the process chamber includes a heating plate 1, a power frequency power supply 30, a radio frequency power supply 40, and a spray head 50. The heating plate 1 contains a heating wire 10. The power frequency power supply 30 provides a power frequency signal to the heating wire 10 for heating. The radio frequency power supply 40 provides a radio frequency signal. The spray head 50 is located above the heating plate 1 and contains radio frequency electrodes for forming in-situ plasma between the spray head 50 and the heating plate 1 under the excitation of the radio frequency signal.

[0048] Furthermore, the heating plate 1 includes a heating wire 10 and a first filtering circuit. The heating wire 10 is connected to a power frequency power supply 30, which provides a power frequency signal to the heating wire 10 to heat it. The first end of the first filtering circuit is connected to the heating wire 10, and its second end is grounded to block the power frequency signal. The first filtering circuit includes an adjustable capacitor C0. By changing the capacitance value of the adjustable capacitor C0, the impedance of the heating wire 10 to ground is adjusted to regulate the electric field distribution formed at the edge of the heating plate 1 by the radio frequency signal provided by the radio frequency power supply 40.

[0049] Here, by adjusting the impedance to ground of the first filter circuit, the present invention can adjust the electric field distribution at the edge of the heating plate 1, thereby forming a uniformly distributed electric field in the edge region of the heating plate 1, so as to improve the uniformity and process repeatability of wafer thin film deposition on the heating plate 1.

[0050] Furthermore, the heating plate 1 also includes a shielding mesh 20. The shielding mesh 20 is disposed above the heating wire 10 and is used to filter the radio frequency signal above the heating wire 10, so as to reduce the interference of the radio frequency signal on the heating accuracy of the heating wire 10.

[0051] Please refer to Figures 3A-3C , Figures 3A-3C A circuit diagram of a filter circuit provided according to some embodiments of the present invention is shown.

[0052] like Figures 3A-3C As shown, the first filter circuit also includes a first inductor L1, which is connected in series with an adjustable capacitor C0. The impedance to ground of the first filter circuit is expressed as:

[0053]

[0054] Where Z is the impedance value of the first filter circuit, ω is the frequency value of the radio frequency signal, L is the inductance value of the first inductor L1, and C is the capacitance value of the adjustable capacitor C0.

[0055] Please refer to Figure 4 , Figure 4 A schematic diagram of the ground impedance adjustment range provided according to some embodiments of the present invention is shown.

[0056] like Figure 4 As shown, m1 and m2 are the two ends of the adjustable capacitor, and the adjustment range of the adjustable capacitor between m1 and m2 is 500pF to 50pF. The frequency of the radio frequency signal is 13.56MHz. Correspondingly, the adjustable range of the impedance to ground of the heating wire 10 can be (+j78Ω) to (-j132Ω).

[0057] In some embodiments, the power supply 30 provides a power frequency signal to the heating wire 10 via a second filter circuit. The second filter circuit is configured to allow only power frequency current to pass through to power the heating wire 10, while blocking radio frequency signals to avoid interfering with the temperature control accuracy of the temperature control system.

[0058] Therefore, the present invention employs a dual-path filtering unit to achieve independent operation of power frequency current transmission and radio frequency energy regulation, thereby ensuring the temperature control accuracy of the heating wire 10 while improving the uniformity of the electric field distribution around the heating plate 1.

[0059] Please continue to refer to this. Figure 3A ,like Figure 3AAs shown, the second filter circuit includes at least one parallel resonant circuit and a first capacitor C1 (e.g., C1 = 470pF). The at least one parallel resonant circuit is used to block radio frequency signals, wherein the capacitor and inductor in the parallel resonant circuit can be constant values ​​(e.g., C = 270pF, L = 0.51uH). The first capacitor C1 is connected to the at least one parallel resonant circuit in an angle to adjust the bandwidth of the first filter circuit. Here, the bandwidth increases with increasing first capacitor C1 and decreases with decreasing first capacitor C1.

[0060] like Figure 3B As shown, the second filter circuit includes at least one parallel resonant circuit and a third capacitor C3 (e.g., 300.9pF). The at least one parallel resonant circuit includes a second inductor L2 (e.g., L2 = 1.2uH) and a second capacitor C2 (e.g., C2 = 145.345pF) connected in parallel. The resonant frequencies of the second inductor L2 and the second capacitor C2 are within the neighborhood of the radio frequency signal, used to block the radio frequency signal. Here, this neighborhood range can be set to ±5%, ±10%, ±15%, or ±20% of the radio frequency signal, depending on the control precision. The first terminal of the third capacitor C3 is connected to the power frequency power supply 30, while its second terminal is grounded, used to transmit the radio frequency signal coupled to the second filter circuit to the ground terminal.

[0061] like Figure 3C As shown, the second filter circuit includes at least one third inductor (e.g., L31 = 1.9uH, L32 = 1.8mH) and a fourth capacitor C4 (e.g., C4 = 53nF). At least one third inductor is located in the mains of the second filter circuit. The impedance of the at least one third inductor in the radio frequency signal band is greater than a preset impedance threshold to block the radio frequency signal. The first terminal of the fourth capacitor C4 is connected to the power frequency power supply 30, while its second terminal is grounded, used to transmit the radio frequency signal coupled to the second filter circuit to the ground terminal.

[0062] Furthermore, the heating wire 10 is made of a first metal material (e.g., nickel-chromium alloy or iron-chromium-aluminum alloy), and the connecting wire between the heating wire 10 and the power frequency power supply 30 is made of a second metal material (e.g., copper). The electrical conductivity of the first metal material is lower than that of the second metal material.

[0063] In some embodiments, the heating plate 1 further includes at least one nickel rod. The at least one nickel rod is disposed at the input end 60 and / or the output end 70 of the heating wire 10 to reduce the contact resistance between the heating wire 10 and the wire.

[0064] The working principle of the heating plate 1 and the process chamber will be described below with reference to some embodiments of the heating plate 1 control method. Those skilled in the art will understand that these embodiments of the heating plate 1 control method are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating modes of the heating plate 1 and the process chamber. Similarly, the heating plate 1 and the process chamber are also merely non-limiting implementations provided by the present invention, and do not constitute a limitation on the executing entity or execution order of each step in these heating plate 1 control methods.

[0065] Specifically, the controller of the heating plate 1 can first execute step S1: obtain the thin film thickness distribution of the wafer deposited on the heating plate 1, and the parasitic parameters corresponding to the structure of the heating plate 1.

[0066] Here, parasitic parameters include parasitic capacitance and parasitic inductance. The first parasitic capacitance decreases as the distance between the shielding mesh 20 and the wafer increases (e.g., 3nF), and / or the second parasitic capacitance decreases as the distance between the heating wire 10 and the shielding mesh 20 increases (e.g., 800pF), and / or the parasitic inductance increases as the length of the nickel rod increases (e.g., 0.3uH).

[0067] Then, the controller can execute step S2: according to the film thickness distribution and parasitic parameters, change the capacitance value of the adjustable capacitor C0 of the heating plate 1 to adjust the impedance to ground of the heating wire 10, thereby adjusting the electric field distribution formed by the RF power supply 40 at the edge of the heating plate 1. For example: in response to the film thickness being higher in the middle and lower at the edge, increase the capacitance value of the adjustable capacitor C0.

[0068] In summary, the heating plate, process chamber, and heating plate control method provided by this invention can be used to adjust the electric field distribution at the edge of the heating plate, thereby forming a uniformly distributed electric field in the edge region of the heating plate, so as to improve the uniformity and process repeatability of wafer thin film deposition on the heating plate.

[0069] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0070] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heating plate, characterized in that, include: A heating wire is connected to a power frequency power supply, which provides a power frequency signal to the heating wire to heat it. as well as A first filtering circuit has a first end connected to the heating wire and a second end grounded to block the power frequency signal. The first filtering circuit includes an adjustable capacitor. By changing the capacitance value of the adjustable capacitor, the impedance of the heating wire to ground is adjusted to regulate the electric field distribution formed by the radio frequency signal provided by the radio frequency power supply at the edge of the heating plate.

2. The heating plate as described in claim 1, characterized in that, The first filter circuit further includes a first inductor, which is connected in series with the adjustable capacitor. The impedance to ground of the first filter circuit is expressed as: Where Z is the impedance value of the first filter circuit, ω is the frequency value of the radio frequency signal, L is the inductance value of the first inductor, and C is the capacitance value of the adjustable capacitor.

3. The heating plate as described in claim 1, characterized in that, The power frequency power supply provides the power frequency signal to the heating wire via a second filter circuit, wherein the second filter circuit blocks the radio frequency signal.

4. The heating plate as described in claim 3, characterized in that, The second filter circuit includes: At least one parallel resonant circuit is used to block the radio frequency signal; and A first capacitor is connected at an angle to the at least one parallel resonant circuit and is used to adjust the bandwidth of the first filter circuit.

5. The heating plate as described in claim 3, characterized in that, The second filter circuit includes: At least one parallel resonant circuit, comprising a second inductor and a second capacitor connected in parallel, wherein the resonant frequencies of the second inductor and the second capacitor are within the neighborhood of the radio frequency signal, for blocking the radio frequency signal; and The third capacitor has its first end connected to the power frequency power supply and its second end grounded, and is used to transmit the radio frequency signal coupled to the second filter circuit to the ground.

6. The heating plate as described in claim 3, characterized in that, The second filter circuit includes: At least one third inductor is disposed in the general path of the second filter circuit, wherein the impedance of the at least one third inductor in the frequency band of the radio frequency signal is greater than a preset impedance threshold, so as to block the radio frequency signal; and The fourth capacitor has its first end connected to the power frequency power supply and its second end grounded, and is used to transmit the radio frequency signal coupled to the second filter circuit to the ground.

7. The heating plate as described in claim 1, characterized in that, The heating wire is made of a first metal material, and the connecting wire between the heating wire and the power supply is made of a second metal material. The first metal material has a lower electrical conductivity than the second metal material. The heating plate also includes: At least one nickel rod is disposed at the input end and / or output end of the heating wire to reduce the contact resistance between the heating wire and the conductor.

8. The heating plate as described in claim 1, characterized in that, Also includes: A shielding mesh is disposed above the heating wire to filter the radio frequency signal above the heating wire.

9. A process chamber, characterized in that, include: The heating plate as described in any one of claims 1 to 8 is provided with a heating wire; A power frequency power supply is used to provide a power frequency signal to the heating wire to heat the heating wire; Radio frequency (RF) power supply, used to provide RF signals; as well as A spray head is disposed above the heating plate and is provided with a radio frequency electrode for generating in-situ plasma between the spray head and the heating plate under the excitation of the radio frequency signal.

10. A heating plate control method, characterized in that, Includes the following steps: Obtain the thin film thickness distribution of the wafer deposited on the heating disk as described in any one of claims 1 to 8, and the parasitic parameters corresponding to the heating disk structure; as well as Based on the film thickness distribution and the parasitic parameters, the capacitance value of the adjustable capacitor of the heating plate is changed to adjust the impedance to ground of the heating wire, thereby adjusting the electric field distribution formed by the radio frequency power supply at the edge of the heating plate.

Images