Heating module control method for semiconductor manufacturing equipment

Abstract

The invention discloses a heating module control method for semiconductor manufacturing equipment, the semiconductor manufacturing equipment comprises a cavity, a base and a heating module, the cavity defines an internal volume, and the base is arranged in the internal volume and used for bearing and rotating a wafer; the heating module is arranged outside the internal volume and is used for heating the wafer; the heating module comprises a plurality of lamp banks arranged around the internal volume; the method comprises the following steps: comparing the thickness of an epitaxial layer of a wafer with a preset value to determine a compensation area; selecting a compensation mechanism corresponding to the compensation area according to the position of the compensation area; determining a basic control unit of the compensation mechanism according to the coverage range of the compensation area; controlling the compensation mechanism to carry out power compensation on the compensation area, wherein the power compensation comprises the following steps: determining single compensation duration of the compensation mechanism in a single rotation period based on the rotation speed of the base; and based on a difference value between the epitaxial layer thickness of the compensation region and a preset value, determining the total compensation duration of the compensation mechanism and the heating power during compensation.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and in particular to a method for controlling heating modules in semiconductor manufacturing equipment. Background Technology

[0002] In chemical vapor deposition (CVD) processes, the precursor is decomposed by heating, and the resulting product is deposited on the wafer surface. To improve the uniformity of thin film deposition and reduce defects, it is necessary to maintain a uniform temperature between the substrate and the wafer throughout the heating process. Therefore, temperature control of the chamber is crucial during heat treatment.

[0003] Existing heating modules typically include multiple lamp groups that heat the substrate and wafer through thermal radiation. Based on the lamp group distribution, the heating module can be divided into an upper lamp area and a lower lamp area, each further divided into an inner ring lamp group and an outer ring lamp group. Taking the upper lamp area as an example, existing heating modules can only adjust the power distribution between the inner and outer ring lamp groups when adjusting the heating power. This means that controlling the entire inner ring lamp group will affect the thickness within the radius of that area.

[0004] In actual manufacturing processes, due to factors such as the structure of the substrate and reflector, uneven heating temperatures may occur in localized areas of the substrate, further affecting the uniformity of the thin film. Existing heating module control methods have low precision and are difficult to regulate the heating temperature of specific local locations on the wafer. To solve these problems, a heating module control method capable of regulating the temperature of specific local locations on the wafer is needed.

[0005] The statements herein provide only background information in relation to this invention and do not necessarily constitute prior art. Summary of the Invention

[0006] The purpose of this invention is to provide a heating module control method for semiconductor manufacturing equipment, addressing the problem that traditional heating modules can only adjust the power of all lamp groups within a single area, resulting in low precision and poor control effect. By designating areas with uneven film thickness as compensation areas and setting corresponding compensation mechanisms for these areas, and using lamp groups or sub-lamps as basic control units for power adjustment, the heating power of the compensation areas can be effectively compensated, ensuring the uniformity of film thickness during the deposition process.

[0007] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0008] This invention provides a method for controlling a heating module in a semiconductor manufacturing equipment, the semiconductor manufacturing equipment comprising:

[0009] A chamber, the chamber defining an internal volume;

[0010] A base, disposed within the internal volume, is used to support and rotate the wafer;

[0011] A heating module, disposed outside the internal volume, is used to heat the wafer; the heating module includes a plurality of lamps arranged around the internal volume.

[0012] The method includes:

[0013] The epitaxial layer thickness of the wafer is compared with a preset value to determine the compensation region;

[0014] Based on the location of the compensation area, select the compensation agency corresponding to the compensation area;

[0015] The basic control unit of the compensation mechanism is determined based on the coverage area of ​​the compensation area;

[0016] Controlling the compensation mechanism to perform power compensation on the compensation area includes: determining the single compensation duration of the compensation mechanism in a single rotation cycle based on the rotation speed of the base; and determining the total compensation duration of the compensation mechanism and the heating power during compensation based on the difference between the epitaxial layer thickness of the compensation area and the preset value.

[0017] Optionally, each of the lamp groups includes multiple independently controllable sub-lamps; depending on the coverage of the compensation area, the basic control unit is the corresponding lamp group and / or sub-lamp.

[0018] Optionally, comparing the epitaxial layer thickness of the wafer with the preset value to determine the compensation region includes: using the region where the difference between the epitaxial layer thickness of the wafer and the preset value is greater than 5% of the preset value as the compensation region, and using other regions of the wafer as non-compensation regions.

[0019] Optionally, during the process of the base driving the wafer to rotate, at least one of the lamp groups or at least one of the sub-lamps passing through the compensation area is selected as the compensation mechanism.

[0020] When the epitaxial layer thickness of the compensation region is less than the preset value, during the rotation of the wafer, when the compensation region passes the lamp group or sub-lamp, the heating power of the lamp group or sub-lamp is increased.

[0021] When the epitaxial layer thickness of the compensation region is greater than the preset value, during the rotation of the wafer, when the compensation region passes the lamp group or sub-lamp, the heating power of the lamp group or sub-lamp is reduced.

[0022] Optionally, in the initial state where the base has not rotated, each lamp group and / or sub-lamp is matched with the corresponding area of ​​the wafer based on the radiation area of ​​each lamp group and / or sub-lamp on the wafer surface to form an initial partition;

[0023] Based on the initial partitioning, the lamp group and / or sub-lamp that match the radiation area with the compensation area are used as the compensation mechanism.

[0024] Optionally, when the epitaxial layer thickness of the compensation region is less than or equal to 85% of a preset value, all the lamp groups or all the sub-lamp passing through the compensation region are set as the compensation mechanism. During the rotation of the wafer, the heating power of the lamp group or sub-lamp corresponding to the compensation region is higher than the heating power of the lamp group or sub-lamp corresponding to the non-compensation region.

[0025] When the thickness of the epitaxial layer in the compensation region is greater than or equal to 115% of a preset value, all the lamp groups or sub-lamps passing through the compensation region are set as the compensation mechanism. During the rotation of the wafer, the heating power of the lamp group or sub-lamps corresponding to the compensation region is lower than the heating power of the lamp group or sub-lamps corresponding to the non-compensation region.

[0026] Optionally, when the coverage area of ​​the compensation area is greater than 6% of the total area of ​​the wafer, a lamp group is selected as the basic control unit.

[0027] When the coverage area of ​​the compensation region is less than or equal to 6% of the total area of ​​the wafer, a sub-lamp is selected as the basic control unit.

[0028] Optionally, when multiple compensation regions exist simultaneously, the compensation mechanism is set up independently for each compensation region.

[0029] Optionally, based on the quantitative relationship between the total compensation duration and the single compensation duration, the compensation mechanism is controlled to perform power compensation once every certain number of rotation cycles.

[0030] Optionally, when a lamp group is selected as the basic control unit, in a single rotation cycle of compensation, for each lamp group in the compensation mechanism: when the edge of the compensation area enters the radiation area of ​​the first sub-lamp in the lamp group, control each sub-lamp in the lamp group to start power compensation; when the compensation area leaves the radiation area of ​​the last sub-lamp in the lamp group, control each sub-lamp in the lamp group to end power compensation.

[0031] Optionally, when a sub-lamp is selected as the basic control unit, in a single rotation cycle of compensation, for each sub-lamp in the compensation mechanism: when the edge of the compensation area enters the radiation area of ​​the sub-lamp, the sub-lamp is controlled to start power compensation; when the edge of the compensation area leaves the radiation area of ​​the sub-lamp, the sub-lamp is controlled to end power compensation.

[0032] Optionally, the duration of a single rotation cycle is determined based on the rotational speed of the base; and based on the compensation area and the compensation mechanism, the total duration of power compensation performed by the compensation mechanism in a single rotation cycle is taken as the single compensation duration.

[0033] This invention has at least the following technical effects:

[0034] By setting up compensation areas where film thickness is uneven and setting up corresponding compensation mechanisms for these areas, unlike the traditional area control mode, by setting up compensation mechanisms and using lamp groups or sub-lamps as basic control units for power regulation, the heating power of the compensation areas can be specifically compensated to ensure the uniformity of film thickness during the deposition process.

[0035] By determining the single compensation duration of the compensation mechanism in a single rotation cycle based on the rotational speed of the base during actual power compensation, and by determining the total compensation duration and heating power of the compensation mechanism during compensation based on the difference between the epitaxial layer thickness of the compensation area and the preset value, it is convenient to adjust various factors in the compensation process according to actual needs and ensure the compensation effect. Attached Figure Description

[0036] Figure 1 This is a cross-sectional view of the epitaxial deposition chamber of a semiconductor manufacturing apparatus provided in an embodiment of the present invention;

[0037] Figure 2 This is a schematic diagram of the lamp group distribution in the lower lighting area according to an embodiment of the present invention;

[0038] Figure 3 This is a schematic diagram of the structure of a sub-lamp provided in an embodiment of the present invention;

[0039] Figure 4 This is a flowchart illustrating a heating module control method according to an embodiment of the present invention.

[0040] Figure 5 This is a wafer film thickness distribution diagram without power compensation provided in an embodiment of the present invention;

[0041] Figure 6 This is a schematic diagram illustrating the relationship between epitaxial layer thickness and temperature during epitaxial layer deposition, provided in an embodiment of the present invention.

[0042] Figure 7 This is a schematic diagram illustrating the relationship between temperature and heating power during the epitaxial layer deposition process according to an embodiment of the present invention;

[0043] Figure 8 This is a wafer film thickness distribution diagram after power compensation provided in an embodiment of the present invention.

[0044] Explanation of reference numerals in the attached figures:

[0045] 100: Semiconductor manufacturing equipment;

[0046] 110: Chamber;

[0047] 111: Internal volume;

[0048] 112: Upper dome;

[0049] 113: Upper padding;

[0050] 114: Lower dome;

[0051] 115: Lower padding;

[0052] 120: Base;

[0053] 121: Wafer;

[0054] 122: Base support shaft;

[0055] 123: Lifting pin;

[0056] 124: Lifting shaft;

[0057] 130: Air intake end;

[0058] 131: Air outlet;

[0059] 140: Heating module;

[0060] 141: Install a pyrometer;

[0061] 142: Lower pyrometer;

[0062] 143: Lighting area;

[0063] 144: Lower Lighting Area;

[0064] 145: Outer ring lights;

[0065] 146: Inner ring light assembly;

[0066] 147: Lighting assembly;

[0067] 10: Sub-lamp;

[0068] 11: Filament;

[0069] 12: Lampshade;

[0070] 13: Main body;

[0071] 14: Driver;

[0072] 15: Controller;

[0073] 16: Power supply;

[0074] RA: Rotation axis Detailed Implementation

[0075] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a further detailed explanation of the heating module control method for semiconductor manufacturing equipment proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0076] This embodiment provides a heating module control method for a semiconductor manufacturing equipment 100, such as... Figure 1 As shown, the semiconductor manufacturing equipment 100 includes a chamber 110, a base 120, and a heating module 140. The chamber 110 is, for example, an epitaxial deposition chamber. It should be noted that the heating module control method provided in this embodiment is not limited to heating the epitaxial deposition chamber, but can also be used in other thermal processing systems and processes, such as Rapid Thermal Processing (RTP) processes.

[0077] The chamber 110 mainly includes an upper dome 112, an upper liner 113, a lower dome 114, and a lower liner 115. The upper dome 112 and the lower dome 114 are made of transparent quartz material, for example, while the upper liner 113 and the lower liner 115 are made of opaque quartz material, for example. The upper dome 112, the upper liner 113, the lower dome 114, and the lower liner 115 together define the internal volume 111 of the chamber 110. A base 120 for supporting and rotating the wafer 121 is disposed in the internal volume 111. The base 120 is made of ceramic, silicon carbide, or silicon carbide-coated graphite, for example. A base support shaft 122, a lifting pin 123, and a lifting shaft 124 are further disposed below the base 120 to support the base 120 and drive the base 120 to lift and rotate around the rotation axis RA.

[0078] like Figure 1 As shown, the semiconductor manufacturing equipment 100 also includes an inlet end 130 and an outlet end 131. The process gas enters the chamber 110 through the inlet end 130 and forms a laminar flow in the upper part of the chamber 110. The flow direction of the process gas is as follows: Figure 1 As indicated by the middle arrow. The process gases include silicon-based or germanium-based precursors. Silicon-based precursors include silane (SiH4), dichlorosilane (Si2H6), dichlorosilane (SiH2Cl2), tetramethylsilane (C4H12Si), hexachlorodichlorosilane (Si2Cl6), dibromosilane (SiH2Br2), higher silanes, and their derivatives and combinations. Germanium-based precursors include germanane (GeH4), digermanane (Ge2H6), germanium tetrachloride (GeCl4), dichlorogermanane (GeH2Cl2), and their derivatives and combinations. The silicon-based or germanium-based precursors can be combined with etching gases such as hydrogen chloride (HCl), chlorine (Cl2), and hydrogen bromide (HBr) and introduced into chamber 110.

[0079] A heating module 140 is disposed outside the internal volume 111 for heating the wafer 121. The heating module 140 includes multiple lamp groups 147 arranged around the internal volume 111. The multiple lamp groups 147 can heat the substrate 120 and the wafer 121 through radiative heat transfer, so that the process gas entering the chamber 110 through the gas inlet 130 is uniformly diffused and decomposed on the surface of the wafer 121. By-product gases and excess process gases can be extracted through the gas outlet 131. The semiconductor manufacturing equipment 100 also includes an upper pyrometer 141 and a lower pyrometer 142 disposed outside the chamber 110. The upper pyrometer 141 and the lower pyrometer 142 are, for example, optical pyrometers or photoelectric pyrometers. The upper pyrometer 141 is used to monitor the surface temperature of the wafer 121 inside the chamber 110, and the lower pyrometer 142 is used to monitor the temperature of the back side of the substrate 120.

[0080] like Figure 1As shown, the multiple lamp groups 147 arranged around the internal volume 111 can be divided into an upper lamp area 143 located above the chamber 110 and a lower lamp area 144 located below the chamber 110. The multiple lamp groups 147 in each lamp area can be evenly distributed around the wafer 121 and the base 120. Taking the lower lamp area as an example... Figure 2 As shown, the multiple light groups 147 in the lower lighting area 144 are arranged in a ring and in two layers along the radial direction, thus dividing it into an inner ring of light groups 146 and an outer ring of light groups 145. Specifically, the inner ring of light groups 146 consists of four light groups 147, namely... Figure 2 The four lamp groups 147, numbered 1-4, can each consist of three sub-lamp 10 connected in series or parallel, for a total of 12 sub-lamp 10. Each sub-lamp 10 has a heating power of 2-5 kW. The outer lamp ring 145 consists of eight lamp groups 147. Figure 2 The eight light groups 147, numbered 5-12, are each composed of three sub-lights 10 connected in series or in parallel, for a total of 24 sub-lights 10.

[0081] In this embodiment, the lamp groups 147 in the lower lamp area 144 can be arranged in more than two layers in the radial direction, or they can be arranged in only one layer. The number of lamp groups 147 in each layer and the number of sub-lamp 10 in each lamp group 147 can be set as needed, and this embodiment does not impose any restrictions on this. As those skilled in the art will understand, the lamp group distribution in the upper lamp area 143 is similar to that in the lower lamp area 144, and will not be described again here. It should be noted that, based on the specific structure of the chamber 110, the lamp group distribution in the upper lamp area 143 can be symmetrical to the lamp group distribution in the lower lamp area 144, or it can be asymmetrical to the lamp group distribution in the lower lamp area 144.

[0082] like Figure 3 As shown, the sub-lamp 10 mainly consists of a filament 11, a lamp cover 12, a main body 13, a driver 14, a controller 15, and a power supply 16. The filament 11 is attached to the main body 13 for heating. The lamp cover 12, made of transparent quartz or a high-temperature resistant material, is placed outside the filament 11 to protect it. The power supply 16 is connected to the filament 11, driver 14, and controller 15 to supply power to these components. The driver 14 converts current and reduces voltage, while the controller 15 controls the operating power of the filament 11. By using the controller 15, each sub-lamp 10 can be independently controlled, facilitating more precise temperature control of different areas of the wafer 121.

[0083] As described in the background section, traditional temperature control methods can only uniformly control all light groups 147 in a certain area. Taking the following light area as an example, for instance... Figure 2The overall control of all lamp groups constituting the inner ring lamp group 146 and the overall control of all lamp groups constituting the outer ring lamp group 145 has low precision and is difficult to solve problems such as uneven thin film deposition caused by the structure of the chamber 110 itself. Based on the above-mentioned semiconductor manufacturing equipment 100, such as Figure 4 As shown, the heating module control method provided in this embodiment includes:

[0084] The epitaxial layer thickness of wafer 121 is compared with a preset value to determine the compensation region;

[0085] Based on the location of the compensation area, a compensation mechanism corresponding to the compensation area is selected, that is, the lamp group 147 and / or sub-lamp 10 corresponding to the compensation area are selected as the compensation mechanism. Here, the compensation mechanism refers to the collection of all lamp groups 147 and / or sub-lamp 10 used for power compensation of the compensation area. The compensation mechanism has a basic control unit. During the rotation of the wafer 121, when the compensation area passes through the radiation range of each basic control unit in the compensation mechanism, the temperature of a specific local location on the wafer 121 can be controlled by adjusting the heating power of the corresponding basic control unit.

[0086] Based on the coverage of the compensation area, lamp group 147 and / or sub-lamp 10 are selected as the basic control unit of the compensation mechanism;

[0087] The control compensation mechanism performs power compensation on the compensation area, including: determining the single compensation duration of the compensation mechanism in a single rotation cycle based on the rotation speed of the base 120; and determining the total compensation duration of the compensation mechanism and the heating power during compensation based on the difference between the epitaxial layer thickness of the compensation area and the preset value.

[0088] Specifically, the epitaxial layer thickness of wafer 121 can be measured using an elliptic polarization spectrometer and compared with a preset value to determine the compensated and uncompensated regions. Specifically, regions where the difference between the epitaxial layer thickness of wafer 121 and the preset value is greater than 5% of the preset value can be designated as compensated regions, while other regions of wafer 121 can be designated as uncompensated regions. For example, as... Figure 5 As shown in the figure, based on the epitaxial layer thickness map measured by the elliptic polarization spectrometer, it can be seen that the thickness in the region slightly to the left of the center is lower than the preset value. Therefore, the region slightly to the left of the center in the figure can be identified as the compensation region, and the other regions can be identified as the non-compensation region.

[0089] Figure 6 The figure illustrates the relationship between epitaxial layer thickness and temperature during the epitaxial layer deposition process. The horizontal axis represents temperature, and the vertical axis represents epitaxial layer thickness. (Reference) Figure 6 During a fixed deposition period, the epitaxial layer thickness is positively correlated with temperature. Therefore, combining... Figure 5 and Figure 6 It can be determined that Figure 5 The temperature in the compensation zone is relatively low during the deposition process, requiring temperature compensation. Furthermore, Figure 7 The figure shows the relationship between the surface temperature of wafer 121 and the heating power during epitaxial layer deposition. The horizontal axis represents the heating power, and the vertical axis represents the temperature. Therefore, to achieve temperature compensation, heating power compensation is required. Specifically, when the epitaxial layer thickness in the compensation area is higher than a preset value, the heating power of the compensation mechanism needs to be reduced. Conversely, when the epitaxial layer thickness in the compensation area is lower than the preset value, the heating power of the compensation mechanism needs to be increased.

[0090] After determining the location of the compensation area, the corresponding lamp group 147 and / or sub-lamp 10 needs to be selected as the compensation mechanism. During the wafer rotation driven by the base, at least one lamp group 147 or sub-lamp 10 can be selected from all the lamp groups 147 or sub-lamp 10 passing through the compensation area to be set as the compensation mechanism. However, when multiple compensation areas exist simultaneously, the compensation mechanism needs to be determined independently for each compensation area. Furthermore, since the difference between the epitaxial layer thickness and the preset value varies in different compensation areas, the heating power used by the compensation mechanism corresponding to different compensation areas during power compensation also differs accordingly.

[0091] In some embodiments, in the initial state where the base 120 is not rotated, based on the radiation area of ​​each lamp group 147 and / or sub-lamp 10 on the surface of the wafer 121, the corresponding area of ​​each lamp group 147 and / or sub-lamp 10 is matched with the corresponding area of ​​the wafer 121 to form an initial partition. Further, based on the initial partition, lamp groups 147 and / or sub-lamp 10 whose radiation areas match the compensation areas serve as compensation mechanisms. To ensure accurate matching between the radiation areas of each lamp group 147 and / or sub-lamp 10 and the corresponding areas of the wafer 121, before the wafer 121 enters the chamber 110, a wafer edge finder can be used to calibrate the wafer 121 using its notch, aligning the center of the wafer 121 with the equipment reference point, ensuring that the wafer 121 is always in the correct position during the processing. Ultimately, precise alignment of the wafer 121 with the process system is achieved, ensuring that the position of the wafer 121 remains consistent each time it enters the chamber 110.

[0092] For example, refer to Figure 2 and Figure 5 In the initial state where the base 120 has not rotated, Figure 5 The area slightly to the left of the center and Figure 2The upper left corner lamp group 147 in the inner ring lamp group 146, i.e., lamp group 147 numbered 1, is matched in position. Therefore, lamp group 147 numbered 1 can be selected as the compensation mechanism for compensation. By increasing the heating power of the compensation mechanism for power compensation, the temperature of the compensation area can be increased, thereby increasing the epitaxial layer thickness of the compensation area and ensuring the overall uniformity of the film.

[0093] Since each sub-lamp 10 is equipped with an independent controller 15 in this embodiment, the compensation mechanism can control the sub-lamp 10 individually, i.e., using the sub-lamp 10 as the basic control unit, or it can control multiple sub-lamp 10s in a single lamp group 147 in combination, i.e., using the lamp group 147 as the basic control unit.

[0094] Specifically, when the coverage area of ​​the compensation area is greater than 6% of the total area of ​​wafer 121, the lamp group 147 can be selected as the basic control unit, while when the coverage area of ​​the compensation area is less than or equal to 6% of the total area of ​​wafer 121, the sub-lamp 10 can be selected as the basic control unit.

[0095] However, in some embodiments, the compensation mechanism can use both lamp group 147 and sub-lamp 10 as basic control units. For example, see reference... Figure 2 When the coverage area of ​​the compensation region is greater than 6% of the total area of ​​wafer 121, and the compensation mechanism is determined based on the initial partitioning, the compensation mechanism may simultaneously include lamp group 147 (number 1) and a single sub-lamp 10 within lamp group 147 (number 2). In this case, within the compensation mechanism, for lamp group 147 (number 1), lamp group 147 can be selected as the basic control unit. For the single sub-lamp 10 within lamp group 147 (number 2), sub-lamp 10 is selected as the basic control unit.

[0096] In other embodiments, when the coverage area of ​​the compensation region includes both the portion within the radiation range of the outer ring lamp group 145 and the portion within the radiation range of the inner ring lamp group 146, the basic control unit can be determined based on the area of ​​each portion. For example, when the portion of the compensation region within the radiation range of the outer ring lamp group 145 is greater than 6% of the total area of ​​the wafer 121, and the portion of the compensation region within the radiation range of the inner ring lamp group 146 is less than 6% of the total area of ​​the wafer 121, lamp group 147 can be used as the basic control unit in the compensation mechanism located in the outer ring lamp group 145, and sub-lamp 10 can be used as the basic control unit in the other compensation mechanism located in the inner ring lamp group 146. Alternatively, it can be understood that when a compensation region spans the radiation ranges of both the outer ring lamp group 145 and the inner ring lamp group 146, this compensation region can be divided into two compensation regions based on the radiation ranges of the outer ring lamp group 145 and the inner ring lamp group 146, and a compensation mechanism and a basic control unit can be set up for each compensation region.

[0097] In the actual process, the base 120 rotates periodically at a fixed speed. If the compensation mechanism is kept at a continuously increasing heating power, it will affect the epitaxial layer thickness in all areas, thus failing to improve the uniformity of the thin film. Therefore, power compensation needs to be performed only when the compensation area passes through the compensation mechanism, based on the rotation cycle of the base 120. For example, when the lamp group 147 is selected as the basic control unit, in a single rotation cycle of compensation, for each lamp group 147 in the compensation mechanism, power compensation can begin when the first sub-lamp 10 in the lamp group 147 contacts the edge of the compensation area, and end when the last sub-lamp 10 in the lamp group 147 leaves the compensation area. When sub-lamp 10 is selected as the basic control unit, in a single rotation cycle of compensation, for each sub-lamp 10 in the compensation mechanism, power compensation can be started when the sub-lamp 10 touches the edge of the compensation area, and power compensation can be ended when the sub-lamp 10 leaves the compensation area.

[0098] In summary, based on the rotational speed of base 120, the duration of a single rotation cycle can be determined. Further combining the compensation area and compensation mechanism, the total duration of power compensation performed by the compensation mechanism within a single rotation cycle can be obtained, and this can be used as the duration of a single compensation operation. Figure 5 Taking the compensation area in the middle as an example, when using Figure 2 When lamp group 147, numbered 1, is used as the compensation mechanism and lamp group 147 is used as the basic control unit, the correspondence between the single compensation duration and the rotation speed of base 120 is shown in Table 1 below.

[0099] Serial Number engine speed / rpm Time per lap / seconds lamp1 power compensation time / s 1 15 4 1 2 30 2 0.5 3 60 1 0.25 4 100 0.60 0.15

[0100] Table 1

[0101] As shown in Table 1, assuming the base 120 rotates at 15 rpm, 30 rpm, 60 rpm, and 100 rpm, the duration of each rotation cycle is 4 s, 2 s, 1 s, and 0.5 s, respectively. Based on the edge of the compensation region and the compensation mechanism, it can be concluded that under the corresponding conditions, the duration of power compensation by the compensation mechanism in a single rotation cycle is 1 s, 0.5 s, 0.25 s, and 0.15 s, respectively.

[0102] Further, refer to Figure 6 and Figure 7 With a fixed heating time, the epitaxial layer thickness increases with increasing heating power. Therefore, the total compensation time and heating power during compensation can be determined based on the difference between the epitaxial layer thickness in the compensation region and a preset value. Specifically, when using a larger compensation power, the total compensation time can be appropriately reduced; while when using a smaller compensation power, the total compensation time needs to be appropriately increased.

[0103] In some embodiments, such as when the difference between the epitaxial layer thickness of the compensation region and the preset value is small, the required total compensation time is short, or when the rotation speed of the base 120 is too fast, the compensation mechanism can be controlled to perform power compensation once every certain number of rotation cycles based on the quantitative relationship between the total compensation time and the single compensation time, such as compensating and heating once every 1 to 5 rotations, thereby effectively avoiding overcompensation and better maintaining the uniformity of the overall film thickness.

[0104] In other embodiments, for example, when the difference between the epitaxial layer thickness of the compensation region and a preset value is large, at least one lamp group 147 or at least one sub-lamp 10 can be selected from all lamp groups 147 or all sub-lamp 10 that the compensation region passes through during the rotation of the base 120 to serve as a compensation mechanism. Further, when the difference between the epitaxial layer thickness of the compensation region and the preset value is greater than or equal to 15%, all lamp groups 147 or all sub-lamp 10 that the compensation region passes through can be served as compensation mechanisms, i.e., a method of following the compensation mechanism with heating is used for the compensation region. Specifically, when the epitaxial layer thickness of the compensation region is less than or equal to 85% of the preset value, all lamp groups 147 or sub-lamp 10 that the compensation region passes through are served as compensation mechanisms, and during the rotation of the wafer 121, the heating power of the lamp group 147 or sub-lamp 10 corresponding to the compensation region is higher than the heating power of the lamp group 147 or sub-lamp 10 corresponding to the non-compensation region. When the thickness of the epitaxial layer in the compensation area is greater than or equal to 115% of the preset value, all lamp groups 147 or sub-lamp 10 passing through the compensation area are set as compensation mechanisms. Furthermore, during the rotation of the wafer 121, the heating power of the lamp group 147 or sub-lamp 10 corresponding to the compensation area is lower than the heating power of the lamp group 147 or sub-lamp 10 corresponding to the non-compensation area.

[0105] by Figure 5 Taking the compensation area in the middle as an example, you can select Figure 2 The inner ring light group 146 includes all the light groups 147, that is Figure 2 Four lamp groups 147, numbered 1-4, serve as a compensation mechanism. During the rotation of the base 120, when the compensation area passes lamp group 147 (number 1), the heating power of lamp group 147 is increased, while the heating power of the other lamp groups remains unchanged. When the compensation area passes lamp group 147 (number 2), the heating power of lamp group 147 is increased again, while the heating power of lamp group 1 is reduced to the same level as the other inner ring lamp groups. This continuous heating of the compensation area by the four lamp groups 147 (numbers 1-4) ensures that the low-temperature areas of wafer 121 are continuously compensated and heated without increasing the film thickness of non-compensated areas, thus further improving film thickness uniformity. Furthermore, by employing compensation heating, the total compensation time can be increased, allowing heating with lower power, which helps reduce energy loss and facilitates control.

[0106] The heating module control method provided in this embodiment controls the heating module. Figure 5 The compensation region shown is subjected to compensation heating, and the resulting epitaxial layer thickness is as follows. Figure 8 As shown, its uniformity is 1.4%, which is less than the 2% uniformity of the epitaxial layer thickness without power compensation.

[0107] This invention distinguishes itself from traditional area control by designating regions with uneven film thickness as compensation areas and setting corresponding compensation mechanisms for these areas. By using compensation mechanisms and adjusting power using lamp groups or sub-lamps as basic control units, targeted compensation of heating power can be applied to these compensation areas. This improves temperature uniformity within the chamber, reduces defects on the wafer caused by thermal stress, and ensures uniform film thickness during deposition. During actual power compensation, the single compensation duration of the compensation mechanism in a single rotation cycle is determined based on the rotational speed of the base. The total compensation duration and heating power during compensation are determined based on the difference between the epitaxial layer thickness of the compensation area and a preset value. This allows for adjustments to various factors according to actual needs, reducing energy consumption while ensuring effective compensation.

[0108] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0109] It should be noted that the apparatus and methods disclosed in the embodiments herein can also be implemented in other ways. The apparatus embodiments described above are merely illustrative; for example, the flowcharts and block diagrams in the accompanying drawings show the architecture, functionality, and operation of possible implementations of apparatus, methods, and computer program products according to various embodiments herein. In this regard, each block in a flowchart or block diagram may represent a module, program, or part of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions marked in the blocks may occur in a different order than those marked in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram and / or flowchart, and combinations of blocks in block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system to perform the specified function or action, or can be implemented using a combination of dedicated hardware and computer instructions.

[0110] In addition, the functional modules in the various embodiments of this article can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0111] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A method for controlling a heating module in semiconductor manufacturing equipment, characterized in that, The semiconductor manufacturing equipment includes: A chamber, the chamber defining an internal volume; A base, disposed within the internal volume, is used to support and rotate the wafer; A heating module, disposed outside the internal volume, is used to heat the wafer; the heating module includes a plurality of lamps arranged around the internal volume. The method includes: The epitaxial layer thickness of the wafer is compared with a preset value to determine the compensation region; Based on the location of the compensation area, select the compensation agency corresponding to the compensation area; The basic control unit of the compensation mechanism is determined based on the coverage area of ​​the compensation area; Controlling the compensation mechanism to perform power compensation on the compensation area includes: determining the single compensation duration of the compensation mechanism in a single rotation cycle based on the rotation speed of the base; and determining the total compensation duration of the compensation mechanism and the heating power during compensation based on the difference between the epitaxial layer thickness of the compensation area and the preset value.

2. The heating module control method according to claim 1, characterized in that, Each of the lamp groups includes multiple independently controllable sub-lamps; depending on the coverage of the compensation area, the basic control unit is the corresponding lamp group and / or sub-lamp.

3. The heating module control method according to claim 2, characterized in that, The step of comparing the epitaxial layer thickness of the wafer with the preset value to determine the compensation region includes: using the region where the difference between the epitaxial layer thickness of the wafer and the preset value is greater than 5% of the preset value as the compensation region, and using other regions of the wafer as non-compensation regions.

4. The heating module control method according to claim 3, characterized in that, The step of selecting the compensation mechanism corresponding to the compensation area based on the location of the compensation area includes: During the process of the base driving the wafer to rotate, at least one of the lamp groups or sub-lamp groups that pass through the compensation area is selected as the compensation mechanism. When the epitaxial layer thickness of the compensation region is less than the preset value, during the rotation of the wafer, when the compensation region passes the lamp group or sub-lamp, the heating power of the lamp group or sub-lamp is increased. When the epitaxial layer thickness of the compensation region is greater than the preset value, during the rotation of the wafer, when the compensation region passes the lamp group or sub-lamp, the heating power of the lamp group or sub-lamp is reduced.

5. The heating module control method according to claim 4, characterized in that, In the initial state where the base has not rotated, based on the radiation area of ​​each lamp group and / or sub-lamp on the wafer surface, each lamp group and / or sub-lamp is matched with the corresponding area of ​​the wafer to form an initial partition; Based on the initial partitioning, the lamp group and / or sub-lamp that match the radiation area with the compensation area are used as the compensation mechanism.

6. The heating module control method according to claim 4, characterized in that, When the epitaxial layer thickness of the compensation region is less than or equal to 85% of the preset value, all the lamp groups or sub-lamp passing through the compensation region are set as the compensation mechanism. During the rotation of the wafer, the heating power of the lamp group or sub-lamp corresponding to the compensation region is higher than the heating power of the lamp group or sub-lamp corresponding to the non-compensation region. When the epitaxial layer thickness of the compensation region is greater than or equal to 115% of the preset value, all the lamp groups or sub-lamp passing through the compensation region are set as the compensation mechanism. During the rotation of the wafer, the heating power of the lamp group or sub-lamp corresponding to the compensation region is lower than the heating power of the lamp group or sub-lamp corresponding to the non-compensation region.

7. The heating module control method according to claim 2, characterized in that, When the coverage area of ​​the compensation area is greater than 6% of the total area of ​​the wafer, the lamp group is selected as the basic control unit. When the coverage area of ​​the compensation region is less than or equal to 6% of the total area of ​​the wafer, a sub-lamp is selected as the basic control unit.

8. The heating module control method according to claim 1, characterized in that, When multiple compensation regions exist simultaneously, the compensation mechanism is set up independently for each compensation region.

9. The heating module control method according to claim 1, characterized in that, Based on the quantitative relationship between the total compensation duration and the single compensation duration, the compensation mechanism is controlled to perform power compensation once every certain number of rotation cycles.

10. The heating module control method according to claim 2, characterized in that, When a lamp group is selected as the basic control unit, during a single rotation cycle of compensation, for each lamp group in the compensation mechanism: when the edge of the compensation area enters the radiation area of ​​the first sub-lamp in the lamp group, control each sub-lamp in the lamp group to start power compensation; when the compensation area leaves the radiation area of ​​the last sub-lamp in the lamp group, control each sub-lamp in the lamp group to end power compensation.

11. The heating module control method according to claim 2, characterized in that, When a sub-lamp is selected as the basic control unit, during a single rotation cycle of compensation, for each sub-lamp in the compensation mechanism: when the edge of the compensation area enters the radiation area of ​​the sub-lamp, the sub-lamp is controlled to start power compensation; when the edge of the compensation area leaves the radiation area of ​​the sub-lamp, the sub-lamp is controlled to end power compensation.

12. The heating module control method according to any one of claims 10 or 11, characterized in that, Based on the rotational speed of the base, the duration of a single rotation cycle is determined; and based on the compensation area and the compensation mechanism, the total duration of power compensation performed by the compensation mechanism in a single rotation cycle is taken as the single compensation duration.

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