Transistor high-temperature testing device and method

Abstract

The invention discloses a transistor high-temperature testing device and method, and relates to the technical field of transistor testing, and the device comprises a micro-control module which controls a temperature control module to work at a constant temperature, controls a transistor module to detect whether a connected to-be-tested transistor is a BJT transistor or an MOS transistor, and carries out the current change rate detection of the to-be-tested transistor through a change detection module. The voltage drop detection module carries out saturation conduction voltage drop detection on the to-be-detected transistor, can intelligently switch a required change threshold and a voltage drop threshold according to the type of the to-be-detected transistor, then judges whether the current change rate and the saturation conduction voltage drop of the to-be-detected transistor are in a normal interval or not, and further can judge the aging degree of the to-be-detected transistor. And when the current change rate and the saturation conduction voltage drop are in a normal interval, the temperature control module is controlled to raise the temperature, and the current change rate and the saturation conduction voltage drop state are detected again. According to the transistor high-temperature testing device and method, the working state detection efficiency of the transistor at different temperatures can be improved.

Description

Technical Field

[0001] This invention relates to the field of transistor testing technology, specifically a transistor high-temperature testing device and method. Background Technology

[0002] Commonly used transistors include BJTs (Bipolar Junction Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). Metal-oxide-semiconductor field Effector Since BJTs and MOSFETs have different operating characteristics, in order to detect the operating status of BJTs and MOSFETs under high temperature conditions, two detection devices with different circuit structures are required to detect the current change rate and saturation conduction voltage drop of BJTs and MOSFETs. This requires a lot of detection equipment and has a high detection cost. Furthermore, it cannot automatically adjust the ambient temperature factor according to the operating detection status of the transistor under test, so it needs to be improved. Summary of the Invention

[0003] This invention provides a transistor high-temperature testing device and method to solve the problems mentioned in the background art.

[0004] According to an embodiment of the present invention, a high-temperature transistor testing device is provided, comprising: Preferably, the power supply module is connected to the microcontroller module and is used to receive AC power and perform step-down, rectification and voltage regulation filtering on the AC power to output first power. When it receives the first control signal output by the microcontroller module, it performs step-down and current reduction processing on the first power and outputs second power. The transistor module, connected to the power supply module and the microcontroller module, is used to connect to the transistor under test and receive the first electrical energy. When the second electrical energy and the first control signal are received and the transistor under test is a MOSFET, the second control signal is provided. The change detection module is connected to the transistor module and the microcontroller module. It is used to detect the rate of change of current of the transistor under test. When it receives the third control signal output by the microcontroller module, it sets the first change threshold and outputs the first detection signal when the detected signal is less than the first change threshold. When it receives the fourth control signal output by the microcontroller module, it sets the second change threshold and outputs the second detection signal when the detected signal is greater than the second change threshold. The voltage drop detection module, connected to the transistor module and the microcontroller module, is used to detect the saturation conduction voltage drop of the transistor under test. When a third control signal is received, a first voltage drop threshold and a second voltage drop threshold are set. When the detected signal is greater than the first voltage drop threshold or the second voltage drop threshold, a third detection signal and a fourth detection signal are output respectively. When a fourth control signal is received, a third voltage drop threshold and a fourth voltage drop threshold are set. When the detected signal is less than the third voltage drop threshold or the fourth voltage drop threshold, a fifth detection signal and a sixth detection signal are output respectively. The temperature control module is connected to the power supply module and the microcontroller module. It is used to receive the first electrical energy and AC power, and to perform constant temperature control or temperature rise control when it receives the temperature adjustment signal output by the microcontroller module. The microcontroller module is used to output a temperature regulation signal and control the temperature control module to maintain a constant temperature. When detecting the component type of the transistor under test, it outputs a first control signal. If a second control signal is not received, it outputs a fourth control signal and stops outputting the first control signal and receiving the second, fifth, or sixth detection signal. If the second control signal is received, it outputs a third control signal and stops outputting the first control signal and receiving the first, third, or fourth detection signal. During the output of the third or fourth control signal, if the first and fourth detection signals or the second and sixth detection signals are not received, it adjusts the duty cycle of the temperature regulation signal and controls the temperature control module to heat up.

[0005] As a further embodiment of the present invention: the power supply module includes a power port, a processing device, a first capacitor, a seventh resistor, and a third thyristor; the voltage drop detection module includes a first voltage regulator, an eighth resistor, a first diode, and a second capacitor; the microcontroller module includes a first controller; Preferably, the first and second ends of the power supply port are connected to the first and second ends of the processing device, respectively. The third end of the processing device is connected to the cathode of the first diode and one end of the first capacitor and is connected to the anode of the third thyristor through the seventh resistor. The control end of the third thyristor is connected to the IO1 end of the first controller. The anode of the first diode is connected to one end of the second capacitor and is connected to the first voltage regulator through the eighth resistor. The other end of the second capacitor is grounded. The fourth end of the processing device and the other end of the first capacitor are both grounded.

[0006] As a further embodiment of the present invention: the transistor module includes a transistor interface, a tenth resistor, a fourth thyristor, a first optocoupler, a sixth resistor, and an eleventh resistor; Preferably, the input terminal of the transistor interface is connected to the third terminal of the processing device and connected to the third terminal of the first optocoupler through the sixth resistor; the output terminal of the transistor interface is connected to the anode of the fourth thyristor through the tenth resistor; the cathode of the fourth thyristor is connected to the first terminal of the first optocoupler; the second terminal of the first optocoupler is grounded; the fourth terminal of the first optocoupler is connected to the IO3 terminal of the first controller and grounded through the eleventh resistor; the control terminal of the fourth thyristor is connected to the IO1 terminal of the first controller; and the drive terminal of the transistor interface is connected to the cathode of the third thyristor and the IO2 terminal of the first controller.

[0007] As a further embodiment of the present invention: the change detection module includes a first inductor, a third capacitor, a ninth resistor, a second thyristor, a first switching transistor, a fifth resistor, a first comparator, a second comparator, a sixth thyristor, a fifth thyristor, a first reference power supply, and a second reference power supply. Preferably, the anode of the second thyristor is connected to one end of the ninth resistor and, through the first inductor, to one end of the third capacitor and the output terminal of the transistor interface. The cathode of the second thyristor is grounded. The control terminal of the second thyristor is connected to the collector of the first switching transistor and, through the fifth resistor, to the third terminal of the processing device. The emitter of the first switching transistor is grounded. The base of the first switching transistor is connected to the IO1 terminal of the first controller. The other end of the ninth resistor is connected to the other end of the third capacitor, the non-inverting input of the first comparator, and the inverting input of the second comparator. The output terminals of the first and second comparators are respectively connected to the IO4 and IO5 terminals of the first controller. The inverting inputs of the first and second comparators are respectively connected to the cathodes of the sixth and fifth thyristors. The anodes of the sixth and fifth thyristors are respectively connected to the first and second reference power supplies. The control terminals of the sixth and fifth thyristors are respectively connected to the IO8 and IO9 terminals of the first controller.

[0008] As a further embodiment of the present invention: the temperature control module includes a first heater, a first thyristor, a first resistor, a first thermistor, a second resistor, a third resistor, a fourth resistor, a seventh comparator, and a first power transistor; Preferably, one end of the first thyristor is connected to the second end of the power supply port, and the other end of the first thyristor is connected to the first end of the power supply port through the first heater. The control end of the first thyristor is connected to the output end of the seventh comparator through the first resistor. The inverting end of the seventh comparator is connected to one end of the first thermistor and grounded through the second resistor. The other end of the first thermistor is connected to the third end of the processing device and one end of the fourth resistor. The other end of the fourth resistor is connected to the drain of the first power transistor. The source of the first power transistor is connected to the non-inverting end of the seventh comparator and grounded through the third resistor. The gate of the first power transistor is connected to the IO6 terminal of the first controller.

[0009] As a further embodiment of the present invention: the voltage drop detection module further includes a third reference power supply, a fourth reference power supply, a fifth reference power supply, a sixth reference power supply, a seventh thyristor, an eighth thyristor, a ninth thyristor, a tenth thyristor, a third comparator, a fourth comparator, a fifth comparator, and a sixth comparator. Preferably, the non-inverting input of the third comparator is connected to the non-inverting input of the fourth comparator, the inverting input of the fifth comparator, the inverting input of the sixth comparator, and the anode of the first diode. The inverting input of the third comparator, the inverting input of the fourth comparator, the non-inverting input of the fifth comparator, and the non-inverting input of the sixth comparator are respectively connected to the cathodes of the seventh thyristor, the eighth thyristor, the ninth thyristor, and the tenth thyristor. The anodes of the seventh thyristor, the eighth thyristor, the ninth thyristor, and the tenth thyristor are respectively connected to the third reference power supply, the fourth reference power supply, the fifth reference power supply, and the sixth reference power supply. The control terminals of the seventh thyristor and the eighth thyristor are both connected to the IO7 terminal of the first controller. The control terminals of the ninth thyristor and the tenth thyristor are both connected to the IO8 terminal of the first controller. The output terminals of the third comparator, the fourth comparator, the fifth comparator, and the sixth comparator are respectively connected to the IO9, IO10, IO11, and IO12 terminals of the first controller.

[0010] Furthermore, to achieve the above objectives, the present invention also proposes a high-temperature transistor testing method, wherein the control method is applied to the aforementioned high-temperature transistor testing apparatus, and the steps of the method include: Preferably, the type of transistor under test connected to the transistor module is obtained; When the transistor under test is a MOSFET, the temperature control module maintains a constant temperature. The change detection module detects the current change rate of the transistor under test according to a set first change threshold. The voltage drop detection module detects the saturation conduction voltage drop of the transistor under test according to a set first voltage drop threshold and a second voltage drop threshold. When the current change rate is less than the first change threshold and the saturation conduction voltage drop is less than the second voltage drop threshold, the temperature detection module is controlled to raise the temperature and the saturation conduction and current change rate detection are performed again. When the transistor under test is a BJT, the temperature control module maintains a constant temperature. The change detection module detects the current change rate of the transistor under test according to the set second change threshold. The voltage drop detection module detects the saturation conduction voltage drop of the transistor under test according to the set third and fourth voltage drop thresholds. When the current change rate is greater than the second change threshold and the saturation conduction voltage drop is greater than the fourth voltage drop threshold, the temperature detection module is controlled to raise the temperature and the saturation conduction and current change rate detection are performed again.

[0011] Compared with the prior art, the beneficial effects of the present invention are as follows: The transistor high-temperature testing device and method of the present invention can be powered by a power supply module, and the temperature control module is controlled by a microcontroller module to perform constant temperature operation. The transistor module detects whether the connected transistor under test is a BJT or a MOSFET. The change detection module detects the current change rate of the transistor under test, and the voltage drop detection module detects the saturation conduction voltage drop of the transistor under test. According to the type of transistor under test, the required change threshold and voltage drop threshold can be intelligently switched to determine whether the current change rate and saturation conduction voltage drop of the transistor under test are within the normal range. Then, the aging degree of the transistor under test can be determined. When the current change rate and saturation conduction voltage drop are within the normal range, the temperature control module is controlled to raise the temperature, and then the current change rate and saturation conduction voltage drop status are detected again, thereby improving the efficiency of detecting the working status of the transistor at different temperatures. Attached Figure Description

[0012] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1 This is a schematic block diagram illustrating the principle of a high-temperature transistor testing device and method provided in an embodiment of the present invention.

[0014] Figure 2 The circuit diagram shows a transistor high-temperature testing device and method provided in an embodiment of the present invention.

[0015] Figure 3 The circuit diagram is provided for the voltage drop detection module in an embodiment of the present invention.

[0016] Figure 4 This is a flowchart of a high-temperature transistor testing method provided in an embodiment of the present invention. Detailed Implementation

[0017] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] In one embodiment, see Figure 1 A high-temperature transistor testing device, comprising: Specifically, the power module 1 is connected to the microcontroller module 6 and is used to receive AC power and perform step-down, rectification and voltage regulation filtering on the AC power to output the first power. When it receives the first control signal output by the microcontroller module 6, it performs step-down and current reduction processing on the first power and outputs the second power. Transistor module 2, connected to power module 1 and microcontroller module 6, is used to connect to the transistor under test and receive the first electrical energy. When it receives the second electrical energy and the first control signal and the transistor under test is a MOS transistor, it provides the second control signal. The change detection module 3 is connected to the transistor module 2 and the microcontroller module 6. It is used to detect the rate of change of current of the transistor under test. When it receives the third control signal output by the microcontroller module 6, it sets the first change threshold and outputs the first detection signal when the detected signal is less than the first change threshold. When it receives the fourth control signal output by the microcontroller module 6, it sets the second change threshold and outputs the second detection signal when the detected signal is greater than the second change threshold. The voltage drop detection module 4 is connected to the transistor module 2 and the microcontroller module 6. It is used to detect the saturation conduction voltage drop of the transistor under test. When the third control signal is received, the first voltage drop threshold and the second voltage drop threshold are set. When the detected signal is greater than the first voltage drop threshold or the second voltage drop threshold, the third detection signal and the fourth detection signal are output respectively. When the fourth control signal is received, the third voltage drop threshold and the fourth voltage drop threshold are set. When the detected signal is less than the third voltage drop threshold or the fourth voltage drop threshold, the fifth detection signal and the sixth detection signal are output respectively. Temperature control module 5 is connected to power module 1 and microcontroller module 6. It is used to receive first electrical energy and AC power, and to perform constant temperature control or temperature rise control when it receives the temperature adjustment signal output by microcontroller module 6. The microcontroller module 6 is used to output a temperature regulation signal and control the temperature control module 5 to perform constant temperature operation. When detecting the component type of the transistor under test, it outputs a first control signal. When no second control signal is received, it outputs a fourth control signal and stops outputting the first control signal and receiving the second, fifth, or sixth detection signal. When the second control signal is received, it outputs a third control signal and stops outputting the first control signal and receiving the first, third, or fourth detection signal. During the output of the third or fourth control signal, if no first and fourth detection signals or second and sixth detection signals are received, it adjusts the duty cycle of the temperature regulation signal and controls the temperature control module 5 to perform temperature rise operation.

[0019] In a specific embodiment, the power supply module 1 can be a power circuit composed of a power port, a processing device, a capacitor, and a thyristor. It can receive AC power and perform voltage reduction, rectification, and voltage regulation filtering on the AC power, and further reduce the voltage and current of the processed power to provide driving power to the transistor module 2. This driving power can drive the MOSFET to conduct when the transistor under test is a MOSFET, but due to low voltage and low current, it cannot drive the BJT to conduct. The transistor module 2 can be a transistor circuit composed of a transistor interface, an optocoupler, a thyristor, and a resistor. It can be connected to the transistor under test and, in conjunction with the power provided by the power supply module 1 and based on the conduction state of the transistor under test, determine whether the connected transistor under test is a BJT or a MOSFET. The change detection module 3 can be a change detection circuit composed of a sampling inductor, a capacitor, a comparator, and a thyristor. It can detect the rate of change of current and detect the degree of current change of the MOSFET and BJT respectively according to a set first change threshold and a second change threshold. The change threshold and the second change threshold are respectively taken as the maximum current change rate that the MOSFET and BJT can withstand, and both are voltage signals; the voltage drop detection module 4 can be a voltage drop detection circuit composed of resistors, capacitors, diodes, comparators, thyristors, etc., which can detect the saturation conduction voltage drop of the transistor under test, and detect the degree of saturation conduction voltage drop of the MOSFET according to the set first voltage drop threshold and second voltage drop threshold, and can also judge the degree of aging. The second voltage drop threshold is greater than the first voltage drop threshold. The degree of saturation conduction voltage drop of the BJT is detected according to the set third voltage drop threshold and fourth voltage drop threshold, and the third voltage drop threshold is greater than the fourth voltage drop threshold; the temperature control module 5 can be a temperature control circuit composed of thermistors, heaters, comparators, field-effect transistors, etc., which can perform temperature detection, constant temperature regulation and voltage boost control; the microcontroller module 6 can be a microcontroller circuit composed of a single-chip microcomputer, which integrates many components such as arithmetic unit, controller, memory and input / output unit, and realizes functions such as signal processing, data storage, module control and timing control.

[0020] In this embodiment, please refer to Figure 2 and Figure 3 The power module 1 includes a power port, a processing device, a first capacitor C1, a seventh resistor R7, and a third thyristor S3; the voltage drop detection module 4 includes a first voltage regulator VCC1, an eighth resistor R8, a first diode D1, and a second capacitor C2; the microcontroller module 6 includes a first controller U1. Specifically, the first and second terminals of the power supply port are connected to the first and second terminals of the processing device, respectively. The third terminal of the processing device is connected to the cathode of the first diode D1 and one end of the first capacitor C1, and is connected to the anode of the third thyristor S3 through the seventh resistor R7. The control terminal of the third thyristor S3 is connected to the IO1 terminal of the first controller U1. The anode of the first diode D1 is connected to one end of the second capacitor C2, and is connected to the first voltage regulator VCC1 through the eighth resistor R8. The other end of the second capacitor C2 is grounded. The fourth terminal of the processing device and the other end of the first capacitor C1 are both grounded.

[0021] In a specific embodiment, the above-mentioned processing device may consist of a transformer, a rectifier, a voltage regulator and a filter; the third thyristor S3 may be a unidirectional thyristor, which outputs driving power; the first controller U1 may be an STM32 microcontroller.

[0022] Furthermore, transistor module 2 includes a transistor interface, a tenth resistor R10, a fourth thyristor S4, a first optocoupler U2, a sixth resistor R6, and an eleventh resistor R11; Specifically, the input terminal of the transistor interface is connected to the third terminal of the processing device and connected to the third terminal of the first optocoupler U2 through the sixth resistor R6. The output terminal of the transistor interface is connected to the anode of the fourth thyristor S4 through the tenth resistor R10. The cathode of the fourth thyristor S4 is connected to the first terminal of the first optocoupler U2. The second terminal of the first optocoupler U2 is grounded. The fourth terminal of the first optocoupler U2 is connected to the IO3 terminal of the first controller U1 and grounded through the eleventh resistor R11. The control terminal of the fourth thyristor S4 is connected to the IO1 terminal of the first controller U1. The drive terminal of the transistor interface is connected to the cathode of the third thyristor S3 and the IO2 terminal of the first controller U1.

[0023] In a specific embodiment, the fourth thyristor S4 can be a unidirectional thyristor; the first optocoupler U2 can be a PC817 optocoupler.

[0024] Furthermore, the change detection module 3 includes a first inductor L1, a third capacitor C3, a ninth resistor R9, a second thyristor S2, a first switching transistor V1, a fifth resistor R5, a first comparator A1, a second comparator A2, a sixth thyristor S6, a fifth thyristor S5, a first reference power supply VF1, and a second reference power supply VF2. Specifically, the anode of the second thyristor S2 is connected to one end of the ninth resistor R9 and, through the first inductor L1, to one end of the third capacitor C3 and the output terminal of the transistor interface. The cathode of the second thyristor S2 is grounded. The control terminal of the second thyristor S2 is connected to the collector of the first switching transistor V1 and, through the fifth resistor R5, to the third terminal of the processing device. The emitter of the first switching transistor V1 is grounded. The base of the first switching transistor V1 is connected to the IO1 terminal of the first controller U1. The other end of the ninth resistor R9 is connected to the other end of the third capacitor C3, the non-inverting input of the first comparator A1, and the second comparator A2. The inverting input of comparator A2, the output of the first comparator A1, and the output of the second comparator A2 are respectively connected to the IO4 and IO5 terminals of the first controller U1. The inverting inputs of the first comparator A1 and the second comparator A2 are respectively connected to the cathodes of the sixth thyristor S6 and the fifth thyristor S5. The anodes of the sixth thyristor S6 and the fifth thyristor S5 are respectively connected to the first reference power supply VF1 and the second reference power supply VF2. The control terminals of the sixth thyristor S6 and the fifth thyristor S5 are respectively connected to the IO8 and IO9 terminals of the first controller U1.

[0025] In a specific embodiment, the first inductor L1 is used as a current sampling inductor; the second thyristor S2, the sixth thyristor S6, and the fifth thyristor S5 can all be unidirectional thyristors; the first switching transistor V1 can be an NPN transistor; the first comparator A1 and the second comparator A2 can be LM358 comparators; the first reference power supply VF1 and the second reference power supply VF2 are respectively set to a second change threshold and a first change threshold.

[0026] Furthermore, the temperature control module 5 includes a first electric heater EH1, a first silicon controlled rectifier S1, a first resistor R1, a first thermistor RT1, a second resistor R2, a third resistor R3, a fourth resistor R4, a seventh comparator A7, and a first power transistor Q1. Specifically, one end of the first thyristor S1 is connected to the second end of the power supply port, and the other end of the first thyristor S1 is connected to the first end of the power supply port through the first heater EH1. The control terminal of the first thyristor S1 is connected to the output terminal of the seventh comparator A7 through the first resistor R1. The inverting terminal of the seventh comparator A7 is connected to one end of the first thermistor RT1 and grounded through the second resistor R2. The other end of the first thermistor RT1 is connected to the third terminal of the processing device and one end of the fourth resistor R4. The other end of the fourth resistor R4 is connected to the drain of the first power transistor Q1. The source of the first power transistor Q1 is connected to the non-inverting terminal of the seventh comparator A7 and grounded through the third resistor R3. The gate of the first power transistor Q1 is connected to the IO6 terminal of the first controller U1.

[0027] In a specific embodiment, the first thermistor RT1 can be a negative temperature coefficient thermistor; the first thyristor S1 can be a bidirectional thyristor; the seventh comparator A7 can be an LM358 comparator; and the first power transistor Q1 can be an N-channel MOSFET.

[0028] Furthermore, the voltage drop detection module 4 also includes a third reference power supply VF3, a fourth reference power supply VF4, a fifth reference power supply VF5, a sixth reference power supply VF6, a seventh thyristor S7, an eighth thyristor S8, a ninth thyristor S9, a tenth thyristor S10, a third comparator A3, a fourth comparator A4, a fifth comparator A5, and a sixth comparator A6. Specifically, the non-inverting input of the third comparator A3 is connected to the non-inverting input of the fourth comparator A4, the inverting input of the fifth comparator A5, the inverting input of the sixth comparator A6, and the anode of the first diode D1. The inverting input of the third comparator A3, the inverting input of the fourth comparator A4, the non-inverting input of the fifth comparator A5, and the non-inverting input of the sixth comparator A6 are respectively connected to the cathodes of the seventh thyristor S7, the eighth thyristor S8, the ninth thyristor S9, and the tenth thyristor S10. The anodes of the seventh thyristor S7, the eighth thyristor S8, the ninth thyristor S9, and the tenth thyristor S10 are also connected to these terminals. The third reference power supply VF3, the fourth reference power supply VF4, the fifth reference power supply VF5, and the sixth reference power supply VF6 are connected respectively. The control terminals of the seventh thyristor S7 and the eighth thyristor S8 are both connected to the IO7 terminal of the first controller U1. The control terminals of the ninth thyristor S9 and the tenth thyristor S10 are both connected to the IO8 terminal of the first controller U1. The output terminals of the third comparator A3, the fourth comparator A4, the fifth comparator A5, and the sixth comparator A6 are respectively connected to the IO9, IO10, IO11, and IO12 terminals of the first controller U1.

[0029] In a specific embodiment, the third comparator A3, the fourth comparator A4, the fifth comparator A5, and the sixth comparator A6 can all be LM358 comparators; the seventh thyristor S7, the eighth thyristor S8, the ninth thyristor S9, and the tenth thyristor S10 can all be unidirectional thyristors; the third reference power supply VF3, the fourth reference power supply VF4, the fifth reference power supply VF5, and the sixth reference power supply VF6 respectively provide a first voltage drop threshold, a second voltage drop threshold, a third voltage drop threshold, and a fourth voltage drop threshold.

[0030] In this embodiment, please refer to Figure 4 The present invention also proposes a high-temperature transistor testing method, wherein the control method is applied to the aforementioned high-temperature transistor testing device, and the method includes the following steps: S100: Obtain the type of transistor under test connected to transistor module 2; S200. When the transistor under test is a MOSFET, the temperature control module 5 operates at a constant temperature. The change detection module 3 detects the current change rate of the transistor under test according to the set first change threshold. The voltage drop detection module 4 detects the saturation conduction voltage drop of the transistor under test according to the set first voltage drop threshold and second voltage drop threshold. When the current change rate is less than the first change threshold and the saturation conduction voltage drop is less than the second voltage drop threshold, the temperature detection module is controlled to raise the temperature and the saturation conduction and current change rate detection are performed again. S300. When the transistor under test is a BJT, the temperature control module 5 operates at a constant temperature. The change detection module 3 detects the current change rate of the transistor under test according to the set second change threshold. The voltage drop detection module 4 detects the saturation conduction voltage drop of the transistor under test according to the set third and fourth voltage drop thresholds. When the current change rate is greater than the second change threshold and the saturation conduction voltage drop is greater than the fourth voltage drop threshold, the temperature detection module is controlled to raise the temperature and the saturation conduction and current change rate detection are performed again.

[0031] In this embodiment of a high-temperature transistor testing device, AC power is connected to the power port. The processing device performs voltage reduction, rectification, regulation, and filtering, and outputs the first power. The I06 terminal of the first controller U1 controls the first power transistor Q1 to conduct. The fourth resistor R4 and the third resistor R3 provide a threshold value for the seventh comparator A7, so that the conduction state of the first thyristor S1 is controlled according to the temperature detected by the first thermistor RT1, and the first heater EH1 is controlled for constant temperature control. The transistor under test is connected to the transistor interface. The second thyristor S2 is turned off. The I01 terminal of the first controller U1 outputs a first control signal to control the conduction of the third thyristor S3, the first switching transistor V1, and the fourth thyristor S4. The first power passes through the seventh resistor R7 and... After the third thyristor S3 performs voltage and current reduction processing, it drives the transistor interface. When the transistor under test is turned on, it indicates that the transistor under test is a MOSFET. At this time, the first optocoupler U2 turns on and provides a second control signal to the IO3 terminal of the first controller U1, causing the IO7 terminal of the first controller U1 to output a third control signal, triggering the fifth thyristor S5, the seventh thyristor S7, and the eighth thyristor S8 to turn on, and the IO1 terminal stops outputting signals. The second thyristor S2 turns on, and the first inductor L1, the third capacitor C3, and the ninth resistor R9 detect the current change rate of the transistor under test. When the detected signal is greater than the first voltage threshold provided by the second reference power supply VF2, it indicates that the temperature has not affected the current change rate of the MOSFET. This indicates that temperature reduces the rate of change of current in the MOSFET. The saturation on-state voltage drop is detected using the first voltage regulator VCC1, the eighth resistor R8, the first diode D1, and the second capacitor C2. The degree of saturation on-state voltage drop is detected using the third comparator A3, the fourth comparator A4, the first voltage drop threshold provided by the third reference power supply VF3, and the second voltage drop threshold provided by the fourth reference power supply VF4. When the detected signal is greater than the first voltage drop threshold, it indicates that the temperature has increased the saturation on-state voltage drop of the transistor under test, but within an acceptable range. If it does not exceed the second voltage drop threshold, it indicates that the saturation on-state voltage drop of the transistor under test is normal. If it exceeds the second voltage drop threshold, it indicates that the increase in the saturation on-state voltage drop of the transistor under test is abnormal. In cases where temperature has not affected the current of the MOSFET... The current change rate is affected, and the saturation on-state voltage drop is normal. The first controller U1 can adjust the conduction level of the first power transistor Q1, thereby controlling the conduction state of the first thyristor S1 to perform temperature rise. The saturation on-state voltage drop and current change rate are detected again. When the first optocoupler U2 is not conducting, it indicates that the transistor under test is a BJT. At this time, the IO8 terminal of the first controller U1 will output a fourth control signal to control the sixth thyristor S6, the ninth thyristor S9, and the tenth thyristor S10 to conduct. Similarly, the change detection module 3 detects the current change rate. When the detected signal is greater than the second voltage threshold provided by the first reference power supply VF1, it indicates that the temperature is affecting the current change rate of the BJT, and the current change rate of the BJT has increased.The voltage drop detection module 4 performs saturation on-state voltage drop detection. If the detected signal is less than the third voltage drop threshold set by the fifth reference power supply VF5 and not less than the fourth voltage drop threshold set by the sixth reference power supply VF6, it indicates that the temperature has caused a decrease in the saturation on-state voltage drop of the transistor under test, but this decrease is within an acceptable range. If it is less than the fourth voltage drop threshold, it indicates an abnormal decrease in the saturation on-state voltage drop of the transistor under test. Similarly, if the temperature does not affect the current change rate of the BJT and the saturation on-state voltage drop is normal, the conduction state of the first thyristor S1 is automatically changed to perform a temperature increase, and the saturation on-state voltage drop and current change rate of the BJT are detected again.

[0032] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0033] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A high-temperature transistor testing device, characterized in that, The device includes: The power module is connected to the microcontroller module. It is used to receive AC power and perform step-down, rectification, and voltage regulation filtering on the AC power to output the first power. When it receives the first control signal output by the microcontroller module, it performs step-down and current reduction processing on the first power and outputs the second power. The transistor module, connected to the power supply module and the microcontroller module, is used to connect to the transistor under test and receive the first electrical energy. When the second electrical energy and the first control signal are received and the transistor under test is a MOSFET, the second control signal is provided. The change detection module is connected to the transistor module and the microcontroller module. It is used to detect the rate of change of current of the transistor under test. When it receives the third control signal output by the microcontroller module, it sets the first change threshold and outputs the first detection signal when the detected signal is less than the first change threshold. When it receives the fourth control signal output by the microcontroller module, it sets the second change threshold and outputs the second detection signal when the detected signal is greater than the second change threshold. The voltage drop detection module, connected to the transistor module and the microcontroller module, is used to detect the saturation conduction voltage drop of the transistor under test. When a third control signal is received, a first voltage drop threshold and a second voltage drop threshold are set. When the detected signal is greater than the first voltage drop threshold or the second voltage drop threshold, a third detection signal and a fourth detection signal are output respectively. When a fourth control signal is received, a third voltage drop threshold and a fourth voltage drop threshold are set. When the detected signal is less than the third voltage drop threshold or the fourth voltage drop threshold, a fifth detection signal and a sixth detection signal are output respectively. The temperature control module is connected to the power supply module and the microcontroller module. It is used to receive the first electrical energy and AC power, and to perform constant temperature control or temperature rise control when it receives the temperature adjustment signal output by the microcontroller module. The microcontroller module is used to output a temperature regulation signal and control the temperature control module to maintain a constant temperature. When detecting the component type of the transistor under test, it outputs a first control signal. If a second control signal is not received, it outputs a fourth control signal and stops outputting the first control signal and receiving the second, fifth, or sixth detection signal. If the second control signal is received, it outputs a third control signal and stops outputting the first control signal and receiving the first, third, or fourth detection signal. During the output of the third or fourth control signal, if the first and fourth detection signals or the second and sixth detection signals are not received, it adjusts the duty cycle of the temperature regulation signal and controls the temperature control module to heat up.

2. The transistor high-temperature testing device according to claim 1, characterized in that, The power module includes a power port, a processing device, a first capacitor, a seventh resistor, and a third thyristor; the voltage drop detection module includes a first voltage regulator, an eighth resistor, a first diode, and a second capacitor; the microcontroller module includes a first controller. The first and second ends of the power port are respectively connected to the first and second ends of the processing device. The third end of the processing device is connected to the cathode of the first diode and one end of the first capacitor and is connected to the anode of the third thyristor through the seventh resistor. The control end of the third thyristor is connected to the IO1 end of the first controller. The anode of the first diode is connected to one end of the second capacitor and is connected to the first voltage regulator through the eighth resistor. The other end of the second capacitor is grounded. The fourth end of the processing device and the other end of the first capacitor are both grounded.

3. The transistor high-temperature testing device according to claim 2, characterized in that, The transistor module includes a transistor interface, a tenth resistor, a fourth thyristor, a first optocoupler, a sixth resistor, and an eleventh resistor; The input terminal of the transistor interface is connected to the third terminal of the processing device and connected to the third terminal of the first optocoupler through the sixth resistor. The output terminal of the transistor interface is connected to the anode of the fourth thyristor through the tenth resistor. The cathode of the fourth thyristor is connected to the first terminal of the first optocoupler. The second terminal of the first optocoupler is grounded. The fourth terminal of the first optocoupler is connected to the IO3 terminal of the first controller and grounded through the eleventh resistor. The control terminal of the fourth thyristor is connected to the IO1 terminal of the first controller. The drive terminal of the transistor interface is connected to the cathode of the third thyristor and the IO2 terminal of the first controller.

4. The transistor high-temperature testing device according to claim 3, characterized in that, The change detection module includes a first inductor, a third capacitor, a ninth resistor, a second thyristor, a first switching transistor, a fifth resistor, a first comparator, a second comparator, a sixth thyristor, a fifth thyristor, a first reference power supply, and a second reference power supply. The anode of the second thyristor is connected to one end of the ninth resistor and, through the first inductor, to one end of the third capacitor and the output terminal of the transistor interface. The cathode of the second thyristor is grounded. The control terminal of the second thyristor is connected to the collector of the first switching transistor and, through the fifth resistor, to the third terminal of the processing device. The emitter of the first switching transistor is grounded. The base of the first switching transistor is connected to the IO1 terminal of the first controller. The other end of the ninth resistor is connected to the other end of the third capacitor, the non-inverting input of the first comparator, and the inverting input of the second comparator. The output terminals of the first and second comparators are respectively connected to the IO4 and IO5 terminals of the first controller. The inverting inputs of the first and second comparators are respectively connected to the cathodes of the sixth and fifth thyristors. The anodes of the sixth and fifth thyristors are respectively connected to the first and second reference power supplies. The control terminals of the sixth and fifth thyristors are respectively connected to the IO8 and IO9 terminals of the first controller.

5. The transistor high-temperature testing device according to claim 4, characterized in that, The temperature control module includes a first heater, a first thyristor, a first resistor, a first thermistor, a second resistor, a third resistor, a fourth resistor, a seventh comparator, and a first power transistor. One end of the first thyristor is connected to the second end of the power supply port, and the other end of the first thyristor is connected to the first end of the power supply port through the first heater. The control end of the first thyristor is connected to the output end of the seventh comparator through the first resistor. The inverting end of the seventh comparator is connected to one end of the first thermistor and grounded through the second resistor. The other end of the first thermistor is connected to the third end of the processing device and one end of the fourth resistor. The other end of the fourth resistor is connected to the drain of the first power transistor. The source of the first power transistor is connected to the non-inverting end of the seventh comparator and grounded through the third resistor. The gate of the first power transistor is connected to the IO6 end of the first controller.

6. The transistor high-temperature testing device according to claim 5, characterized in that, The voltage drop detection module also includes a third reference power supply, a fourth reference power supply, a fifth reference power supply, a sixth reference power supply, a seventh thyristor, an eighth thyristor, a ninth thyristor, a tenth thyristor, a third comparator, a fourth comparator, a fifth comparator, and a sixth comparator. The non-inverting input of the third comparator is connected to the non-inverting input of the fourth comparator, the inverting input of the fifth comparator, the inverting input of the sixth comparator, and the anode of the first diode. The inverting input of the third comparator, the inverting input of the fourth comparator, the non-inverting input of the fifth comparator, and the non-inverting input of the sixth comparator are respectively connected to the cathodes of the seventh thyristor, the eighth thyristor, the ninth thyristor, and the tenth thyristor. The anodes of the seventh thyristor, the eighth thyristor, the ninth thyristor, and the tenth thyristor are respectively connected to the third reference power supply, the fourth reference power supply, the fifth reference power supply, and the sixth reference power supply. The control terminals of the seventh thyristor and the eighth thyristor are both connected to the IO7 terminal of the first controller. The control terminals of the ninth thyristor and the tenth thyristor are both connected to the IO8 terminal of the first controller. The output terminals of the third comparator, the fourth comparator, the fifth comparator, and the sixth comparator are respectively connected to the IO9, IO10, IO11, and IO12 terminals of the first controller.

7. A method for high-temperature transistor testing, applied to the high-temperature transistor testing apparatus according to claims 1-6, characterized in that, Includes the following steps: Obtain the type of transistor under test connected to the transistor module; When the transistor under test is a MOSFET, the temperature control module maintains a constant temperature. The change detection module detects the current change rate of the transistor under test according to a set first change threshold. The voltage drop detection module detects the saturation conduction voltage drop of the transistor under test according to a set first voltage drop threshold and a second voltage drop threshold. When the current change rate is less than the first change threshold and the saturation conduction voltage drop is less than the second voltage drop threshold, the temperature detection module is controlled to raise the temperature and the saturation conduction and current change rate detection are performed again. When the transistor under test is a BJT, the temperature control module maintains a constant temperature. The change detection module detects the current change rate of the transistor under test according to the set second change threshold. The voltage drop detection module detects the saturation conduction voltage drop of the transistor under test according to the set third and fourth voltage drop thresholds. When the current change rate is greater than the second change threshold and the saturation conduction voltage drop is greater than the fourth voltage drop threshold, the temperature detection module is controlled to raise the temperature and the saturation conduction and current change rate detection are performed again.

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