Optical proximity effect correction method and device, electronic equipment and storage medium

Abstract

The invention relates to the technical field of semiconductors, in particular to an optical proximity effect correction method and device, electronic equipment and a storage medium. The method comprises the following steps: acquiring a to-be-corrected layout, wherein the to-be-corrected layout comprises a to-be-corrected graph and a plurality of standard graphs; determining graph information of a standard graph around the to-be-corrected graph; determining a compensation parameter corresponding to the to-be-corrected graph based on the graph information; and correcting the to-be-corrected graph based on the compensation parameter to obtain a target layout. Therefore, the pattern imaged on the wafer based on the corrected target layout has better morphology.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to an optical proximity effect correction method and device, an electronic device, and a storage medium. BACKGROUND

[0002] As a key process in semiconductor integrated circuit manufacturing, the lithography process has always been a hot topic of research. The lithography process can specifically include exposure and development, which are used to form a predetermined pattern on a photoresist using a mask, and then the pattern on the mask can be transferred to a substrate based on an etching process. With the continuous miniaturization of semiconductor integrated circuits, higher requirements are placed on the lithography process, i.e., higher lithography resolution.

[0003] Ideally, the pattern formed on the substrate is exactly the same as the pattern on the mask, but due to the optical system and the optical diffraction effect in the optical path, there will be a deviation between the pattern ultimately formed on the substrate and the pattern on the mask. With the continuous reduction of line width, this deviation will be further increased. In order to reduce this deviation, a technology for increasing the lithography resolution, i.e., optical proximity correction (OPC) technology, has emerged, which corrects the error in the lithography process to compensate for the optical proximity effect caused by the optical system.

[0004] However, the traditional OPC method does not fully consider the influence of the surrounding environment, resulting in low line width accuracy after OPC correction, which in turn affects the electrical performance of the semiconductor integrated circuit. SUMMARY

[0005] To solve the above technical problems, the present application discloses, in one aspect, an optical proximity effect correction method, which comprises:

[0006] obtaining a to-be-corrected layout, the to-be-corrected layout comprising a to-be-corrected pattern and a plurality of standard patterns;

[0007] determining pattern information of the standard patterns around the to-be-corrected pattern;

[0008] determining a compensation parameter corresponding to the to-be-corrected pattern based on the pattern information;

[0009] correcting the to-be-corrected pattern based on the compensation parameter to obtain a target layout.

[0010] For example, the pattern information of the standard patterns around the to-be-corrected pattern includes the pattern information of the standard patterns on both sides of the to-be-corrected pattern; and the determination of the pattern information of the standard patterns around the to-be-corrected pattern comprises:

[0011] acquiring a pattern position of each standard pattern on two sides of the pattern to be corrected;

[0012] determining a pattern distribution density on the two sides of the pattern to be corrected based on the pattern position;

[0013] determining size information of a target pattern on the two sides of the pattern to be corrected; the target pattern is a pattern adjacent to the pattern to be corrected in the standard pattern.

[0014] Exemplarily, the pattern to be corrected includes opposite first and second side edges; the determining of the compensation parameter corresponding to the pattern to be corrected based on the pattern information includes:

[0015] determining a first pattern difference value corresponding to the two sides of the pattern to be corrected based on the pattern distribution density of the first and second side edges; the first pattern difference value represents a difference degree of the pattern distribution density of the standard pattern on the first side edge and the standard pattern on the second side edge of the pattern to be corrected;

[0016] determining a second pattern difference value corresponding to the pattern to be corrected based on the size information of the target pattern on the two sides of the pattern to be corrected; the second pattern difference value represents a difference degree of the size information of the target pattern on the first and second side edges;

[0017] determining the compensation parameter corresponding to the two sides of the pattern to be corrected according to the first and second pattern difference values.

[0018] Exemplarily, the determining of the second pattern difference value corresponding to the pattern to be corrected based on the size information of the target pattern on the two sides of the pattern to be corrected includes:

[0019] determining size information of the pattern to be corrected;

[0020] determining the second pattern difference value corresponding to the pattern to be corrected based on the size information of the target pattern on the first side edge, the size information of the target pattern on the second side edge, and the size information of the pattern to be corrected; the second pattern difference value represents a difference degree of the size information of the target pattern on the first and second side edges and the pattern to be corrected.

[0021] Exemplarily, the size information includes a pattern width; the determining of the second pattern difference value corresponding to the pattern to be corrected based on the size information of the target pattern on the first side edge, the size information of the target pattern on the second side edge, and the size information of the pattern to be corrected includes:

[0022] obtaining a first difference value corresponding to the pattern to be corrected based on the width of the target pattern on the first side edge and the width of the pattern to be corrected;

[0023] obtaining a second difference value corresponding to the to-be-corrected pattern based on the width of the target pattern of the second side and the width of the to-be-corrected pattern;

[0024] determining a second pattern difference value of two sides of the to-be-corrected pattern according to the first difference value and the second difference value; the second pattern difference value represents a difference degree of the width of the target pattern of the first side and the width of the target pattern of the second side, and the width of the to-be-corrected pattern.

[0025] Illustratively, the compensation parameter includes a length difference value of the compensation patterns of two sides of the to-be-corrected pattern, and the compensation patterns are used to compensate the end of the to-be-corrected pattern.

[0026] The method further includes:

[0027] determining a first compensation pattern and a second compensation pattern corresponding to two sides of the to-be-corrected pattern;

[0028] determining a length difference value of the first compensation pattern and the second compensation pattern based on the first pattern difference value and the second pattern difference value, to obtain a length difference value of the compensation patterns of two sides of the to-be-corrected pattern.

[0029] Illustratively, the to-be-corrected pattern is a strip pattern; and the pattern information of the standard pattern around the to-be-corrected pattern includes the pattern information of the standard patterns of two sides of the to-be-corrected pattern.

[0030] The method further includes:

[0031] Illustratively, the method further includes:

[0032] performing simulation lithography processing on the target layout to obtain a target simulation pattern;

[0033] if the target simulation pattern meets a preset pattern condition, outputting a first correction result; the first correction result represents that the to-be-corrected pattern is corrected;

[0034] if the target simulation pattern does not meet the preset pattern condition, repeatedly adjusting the compensation parameter, correcting the to-be-corrected pattern based on the adjusted compensation parameter, and performing the simulation lithography processing on the target layout until the target simulation pattern meets the preset pattern condition.

[0035] Exemplarily, the preset pattern condition comprises: a curvature radius corresponding to a contour of the target simulation pattern is greater than or equal to a preset curvature radius, and / or an offset between a vertex of an end of the target simulation pattern and a central axis of the to-be-corrected pattern is less than or equal to a first preset threshold.

[0036] Exemplarily, the preset pattern condition further comprises: an edge placement error corresponding to the target simulation pattern is less than or equal to a second preset threshold.

[0037] In another aspect, the present application also discloses a mask manufacturing method, which is characterized by: manufacturing a mask based on the layout corrected by the above-mentioned optical proximity effect correction method.

[0038] In another aspect, the present application also discloses an optical proximity effect correction device, which is characterized by: the device comprises:

[0039] An acquisition module is configured to acquire a to-be-corrected layout, wherein the to-be-corrected layout comprises a to-be-corrected pattern and a plurality of standard patterns;

[0040] A first determination module is configured to determine pattern information of the standard patterns around the to-be-corrected pattern;

[0041] A second determination module is configured to determine a compensation parameter corresponding to the to-be-corrected pattern based on the pattern information;

[0042] A correction module is configured to correct the to-be-corrected pattern based on the compensation parameter to obtain a target layout.

[0043] In another aspect, the present application also discloses an electronic device, which comprises a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement the above-mentioned optical proximity effect correction method.

[0044] In another aspect, the present application also discloses a computer readable storage medium, wherein the computer readable storage medium stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by a processor to implement the above-mentioned optical proximity effect correction method.

[0045] The optical proximity effect correction method provided in the embodiments of the present application specifically comprises the following steps: obtaining a to-be-corrected layout, wherein the to-be-corrected layout comprises a to-be-corrected pattern and a plurality of standard patterns; determining pattern information of the standard patterns around the to-be-corrected pattern; determining a compensation parameter corresponding to the to-be-corrected pattern based on the pattern information; and correcting the to-be-corrected pattern based on the compensation parameter to obtain a target layout. Therefore, the pattern formed on a wafer based on the target layout obtained after correction has better pattern topography and higher line width precision. BRIEF DESCRIPTION OF DRAWINGS

[0046] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort.

[0047] Figure 1 is a schematic diagram of a to-be-corrected layout according to an example of the present application;

[0048] Figure 2 is a scanning electron microscope image of a pattern corresponding to a to-be-corrected pattern after correction according to an existing method;

[0049] Figure 3 is a flowchart of an optical proximity effect correction method according to an example of the present application;

[0050] Figure 4 is a partial schematic diagram of a to-be-corrected pattern after correction according to an example of the present application;

[0051] Figure 5 is a partial schematic diagram of a to-be-corrected pattern after correction according to an example of the present application;

[0052] Figure 6 is Figure 4 and Figure 5 is a comparison diagram of the profile curves of the end portions of the patterns in and

[0053] Figure 7 is a scanning electron microscope image of a pattern corresponding to a to-be-corrected pattern after correction according to an example of the present application;

[0054] Figure 8 is a structural block diagram of an optical proximity effect correction device according to an example of the present application;

[0055] Figure 9 is a hardware structural block diagram of an electronic device running an optical proximity effect correction method according to an example of the present application.

[0056] The following is a supplementary description of the drawings:

[0057] 1 - to be corrected pattern; 101 - first side edge; 102 - second side edge; 103 - line end; 2 - first pattern; 201 - first adjacent pattern; 3 - second pattern; 301 - second adjacent pattern; 4 - first compensation pattern; 5 - second compensation pattern; 6 - third compensation pattern; 7 - target analog pattern. DETAILED DESCRIPTION

[0058] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work belong to the scope of protection of the present application.

[0059] It should be noted that the terms "first", "second" and the like in the specification and claims of the present application and the above-described drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or a sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or server including a series of steps or units need not be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0060] In semiconductor manufacturing technology, when a designer designs a layout, the layout is first corrected based on an OPC technology, and then the corrected layout is made into a mask, and subsequently the layout on the mask is transferred to a pattern on a wafer based on a photolithography process. Therefore, the quality of the corrected layout determines the topography quality of the pattern finally presented on the wafer. However, the traditional OPC method does not consider the influence of variable environments on the target pattern, so that the target pattern on the wafer can still be curved and have poor topography.

[0061] In fact, in a variable environment, the target pattern will have different profile behaviors after lithography, especially when the environment on both sides of the target pattern is different, such as the pattern density on one side of the target pattern is large, and the pattern density on the other side is small, or the size of the adjacent pattern on one side of the target pattern is larger than the size of the adjacent pattern on the other side. Because the stress generated in different environments is different, the stress on both sides of the target pattern is different, and finally it may cause the profile of the target pattern to be curved. Specifically, in the lithography process, the effect on the photoresist layout, when the target pattern is transferred to the photoresist through a mask, the layout of the different target patterns will affect the formation of the pattern on the photoresist, because different layout target patterns will generate different stress. In addition, the surrounding environment of the target pattern (such as the density or size of the surrounding pattern) will also affect the photoresist pattern formed by it, and these effects will eventually lead to distortion of the pattern on the wafer, and this photoresist distortion problem is also one of the problems that need to be solved in the development of the existing Fin Field-Effect Transistor (FinFET) technology.

[0062] Referring to Figure 1 , which shows a schematic diagram of an exemplary to-be-corrected layout. The to-be-corrected layout includes a to-be-corrected pattern 1, and one side of the to-be-corrected pattern 1 is provided with a first pattern 2 and the other side is provided with a second pattern 3. It can be seen that the first pattern 2 and the second pattern 3 are different patterns, specifically, the shape and size of each pattern in the first pattern 2 and the second pattern 3 are different, indicating that the pattern environment on both sides of the to-be-corrected pattern 1 is different. Further comparison of the first pattern 2 and the second pattern 3 can show that the size of the adjacent pattern 1 of the to-be-corrected pattern 1 on both sides is also different. The size of the adjacent pattern 1 (i.e. the first adjacent pattern 201) in the first pattern 2 is larger than the size of the adjacent pattern 1 (i.e. the second adjacent pattern 301) in the second pattern 3. And because the width of the to-be-corrected pattern 1 is comparable to the width of the first adjacent pattern 201, and the width of the to-be-corrected pattern 1 is much larger than the width of the second adjacent pattern 301, which makes the influence of the first pattern 2 on the to-be-corrected pattern 1 greater than the influence of the second pattern 3 on the to-be-corrected pattern 1. Referring to Figure 2 , which shows a scanning electron microscope image of the pattern corresponding to the to-be-corrected pattern 1 on the wafer after correction, specifically, by first correcting the to-be-corrected layout shown in Figure 1 using the existing OPC method, then manufacturing a mask based on the corrected layout, and then transferring the layout on the mask to the wafer using lithography technology, and then scanning the wafer after lithography using a scanning electron microscope device, the corresponding scanning electron microscope image can be obtained, from Figure 2As can be clearly seen from the figure, the to-be-corrected pattern 1 presents a bending situation towards the second pattern 3, further proving that the influence of the first pattern 2 on the to-be-corrected pattern 1 is greater than the influence of the second pattern 3 on the to-be-corrected pattern 1, and when the surrounding environment on both sides of the to-be-corrected pattern 1 is different, it will affect the pattern effect of the target pattern on the wafer.

[0063] Therefore, in order to solve the problem that the pattern still bends after the above-mentioned existing correction, please refer to Figure 3 , which shows a flowchart of an exemplary optical proximity correction method of the present application. The embodiment of the present application provides a new optical proximity correction method, which can specifically include:

[0064] S301: Obtain a to-be-corrected pattern, the to-be-corrected pattern including a to-be-corrected pattern and a plurality of standard patterns.

[0065] Exemplarily, the to-be-corrected pattern in the embodiment of the present application can be a pattern as shown in Figure 1 , one side of the to-be-corrected pattern 1 is provided with a first pattern 2, and the other side is provided with a second pattern 3. The first pattern 2 includes a plurality of standard patterns, and specifically, the standard pattern in the first pattern 2 can also be referred to as a first sub-pattern. The second pattern 3 also includes a plurality of standard patterns, and specifically, the standard pattern in the second pattern 3 can also be referred to as a second sub-pattern. Figure 1 The distance between the adjacent patterns on both sides of the to-be-corrected pattern 1 in the figure is approximately equal, such as the interval between adjacent first sub-patterns is d1, the interval between adjacent second sub-patterns is d2, and d1 is equal to d2. Optionally, it can also be the case that the pattern distribution density on both sides of the to-be-corrected pattern 1 is different, such as when d1 is not equal to d2, it indicates that the pattern density of the first pattern 2 and the second pattern 3 is different. Specifically, when d1 is greater than d2, it indicates that the pattern density of the first pattern 2 is less than that of the second pattern 3, and when d1 is less than d2, it indicates that the pattern density of the first pattern 2 is greater than that of the second pattern 3. Optionally, the to-be-corrected pattern 1 on both sides is also provided with auxiliary patterns, and the size of the auxiliary pattern is usually much smaller than the size of the main pattern (such as the to-be-corrected pattern 1), which is used to improve the imaging quality but will not be imaged on the wafer. Therefore, the distance condition of these auxiliary patterns and the to-be-corrected pattern 1 also belongs to one of the surrounding environment conditions of the to-be-corrected pattern 1.

[0066] Exemplarily, the to-be-corrected pattern 1 can be a rectangular bar as shown in Figure 1 . It can also be other shapes in practice, as long as it is roughly in the shape of a bar. In order to facilitate the understanding of the technical solutions of the present application, the to-be-corrected pattern will be mainly described in the following Figure 1 . However, it should be understood that the actual design of the to-be-corrected pattern is not limited to the pattern shown in Figure 1 .

[0067] For example, the patterns contained in the first pattern 2 and the second pattern 3 can be as shown in the following table: Figure 1 The patterns can also be other special shapes, such as U-shaped, L-shaped, etc., which are not limited herein.

[0068] For example, when a designer uploads a designed layout to a processing software, the processing software can obtain the layout, and then determine the surrounding environment of the to-be-corrected pattern 1 through recognition and analysis of the layout. Of course, a manual combination method can also be used, such as an operator inputting the attributes (such as the size, spacing, number, etc. of each pattern in the layout) of the layout into an attribute input interface provided by the processing software.

[0069] S303: determining the pattern information of the standard patterns surrounding the to-be-corrected pattern.

[0070] In the embodiment of the present application, the pattern information of the standard patterns surrounding the to-be-corrected pattern 1 can specifically include the position of the pattern, the distribution density of the pattern, and the size information of the adjacent pattern, etc., to represent the surrounding environment of the to-be-corrected pattern 1.

[0071] In an exemplary embodiment, the pattern information of the standard patterns surrounding the to-be-corrected pattern includes the pattern information of the standard patterns on both sides of the to-be-corrected pattern; and step S303 can specifically include: obtaining the position of each standard pattern on both sides of the to-be-corrected pattern; determining the distribution density of the patterns on both sides of the to-be-corrected pattern based on the position of the patterns; and determining the size information of the target pattern on both sides of the to-be-corrected pattern; the target pattern is the pattern adjacent to the to-be-corrected pattern in the standard patterns. Specifically, by detecting the to-be-corrected layout, the position coordinate information of each pattern in the to-be-corrected layout can be obtained, which can be the position of the center axis of each pattern or the position of the side of the contour of each pattern. Figure 1 Figure 1 In an exemplary embodiment, the position coordinate information of each pattern in the to-be-corrected layout can be obtained by detecting the to-be-corrected layout, which can be the position of the center axis of each pattern or the position of the side of the contour of each pattern.

[0072] For example, please refer to Figure 4 ​, the to-be-corrected pattern 1 can specifically include a first side edge 101, a line end 103 and a second side edge 102 connected in sequence, the first side edge 101 and the second side edge 102 are oppositely arranged, a pattern area adjacent to the first side edge 101 is a first pattern 2, and a pattern area adjacent to the second side edge 102 is a second pattern 3, thus, for the first pattern 2, the first pattern 2 includes a plurality of first sub-patterns, and a specific method for determining the pattern distribution density of the first pattern 2 can include: determining the interval between each adjacent first sub-pattern in the first pattern 2 based on the position of each first sub-pattern in the first pattern 2; and determining the pattern distribution density of the first pattern 2 based on the interval between each adjacent first sub-pattern in the first pattern 2. Optionally, the interval between each adjacent first sub-pattern in the first pattern 2 can be averaged, and the obtained average interval value can be used as the pattern distribution density of the first pattern 2. The dispersion degree of the interval between each adjacent first sub-pattern can also be calculated, and the obtained dispersion degree value can be used as the pattern distribution density of the first pattern 2. Optionally, other methods for measuring the pattern distribution density of the first pattern 2 can also be used, but the input parameters of these methods at least include the interval between each adjacent first sub-pattern in the first pattern 2. Similarly, the pattern distribution density of the second pattern 3 can be calculated by using the above-mentioned method for calculating the pattern density of the first pattern 2, that is, the interval between each adjacent second sub-pattern in the second pattern 3 needs to be determined based on the position of each second sub-pattern in the second pattern 3, and then the pattern distribution density of the second pattern 3 is calculated based on the interval between each adjacent second sub-pattern. Optionally, when determining the environmental density of the first side edge 101 and the second side edge 102 of the to-be-corrected pattern 1, the distance between the first side edge 101 and the first pattern 2 and the distance between the second side edge 102 and the second pattern 3 also need to be considered. Specifically, the distance between the first side edge 101 and the pattern of the adjacent first side edge 101 in the first pattern 2 can be set as a first distance, and the distance between the second side edge 102 and the pattern of the adjacent second side edge 102 in the second pattern 3 can be set as a second distance. In an exemplary embodiment, the pattern density of the first side edge 101 of the to-be-corrected pattern 1 can be determined based on the pattern distribution density of the first pattern 2 and the first distance, and the pattern density of the second side edge 102 of the to-be-corrected pattern 1 can be determined based on the pattern distribution density of the second pattern 3 and the second distance.In addition, since the auxiliary patterns exist, the distance between the auxiliary patterns and the to-be-corrected pattern 1 also affects the pattern finally imaged on the wafer, so when calculating the pattern distribution density of the two sides of the to-be-corrected pattern 1, the influence of the auxiliary patterns adjacent to the to-be-corrected pattern 1 also needs to be considered. In another exemplary embodiment, the pattern density of the first side 101 of the to-be-corrected pattern 1 can be determined based on the pattern distribution density of the first pattern 2, the first distance, and the distance between the first side 101 and the auxiliary patterns located at the first side 101. The pattern density of the second side 102 of the to-be-corrected pattern 1 can be determined based on the pattern distribution density of the second pattern 3, the second distance, and the distance between the second side 102 and the auxiliary patterns located at the second side 102.

[0073] For example, based on the foregoing, it can be known that the size of the adjacent patterns on the two sides of the to-be-corrected pattern 1 also affects the imaged pattern of the to-be-corrected pattern 1 on the wafer, so when determining the surrounding environment of the two sides of the to-be-corrected pattern 1, the pattern information (such as width, length, position, etc.) of the adjacent patterns on the two sides of the to-be-corrected pattern 1 also needs to be considered. Please refer to Figure 1 and Figure 2 That is, the pattern information of the first adjacent pattern 201 and the second adjacent pattern 301 needs to be considered. When there are two first adjacent patterns 201 on the first side 101, and one first adjacent pattern 201 is close to one end of the to-be-corrected pattern 1, and the other first adjacent pattern 201 is close to the other end of the to-be-corrected pattern 1, since the width of the first adjacent pattern 201 is much larger than the width of the second adjacent pattern 301, under the stress influence of the first adjacent pattern 201 and the second adjacent pattern 301, the pattern of the to-be-corrected pattern 1 imaged on the wafer will present the case that the two ends bend towards the second side 102.

[0074] S305: determining a compensation parameter corresponding to the to-be-corrected pattern based on the pattern information.

[0075] In one exemplary embodiment, the to-be-corrected pattern is a strip pattern; the pattern information of the standard pattern around the to-be-corrected pattern includes the pattern information of the standard patterns on the two sides of the to-be-corrected pattern; and step S305 can specifically include: when the pattern information of the standard patterns on the two sides of the to-be-corrected pattern is inconsistent, determining a compensation parameter corresponding to the to-be-corrected pattern based on the pattern information of the standard patterns on the two sides of the to-be-corrected pattern. That is, when the surrounding environment of the two sides of the to-be-corrected pattern is inconsistent, the compensation parameter corresponding to the to-be-corrected pattern is determined based on the surrounding environment of the two sides of the to-be-corrected pattern; and the compensation parameter represents the asymmetry degree of the asymmetry compensation pattern of the end of the to-be-corrected pattern.

[0076] In an exemplary embodiment, the to-be-corrected pattern includes a first side edge 101 and a second side edge 102; step S305 can be specifically illustrated as: determining a first pattern difference value corresponding to the two sides of the to-be-corrected pattern based on the pattern distribution density of the first side edge and the second side edge; the first pattern difference value represents the dense difference degree of the standard pattern of the first side edge and the standard pattern of the second side edge of the to-be-corrected pattern; determining a second pattern difference value corresponding to the to-be-corrected pattern based on the size information of the target pattern of the two sides of the to-be-corrected pattern, the second pattern difference value representing the difference degree of the size information of the target pattern of the first side edge and the second side edge; determining the compensation parameter corresponding to the two sides of the to-be-corrected pattern according to the first pattern difference value and the second pattern difference value. Specifically, the difference value between the pattern distribution density of the first pattern 2 and the pattern distribution density of the second pattern 3 can be directly taken as the first pattern difference value of the two sides of the to-be-corrected pattern 1. In order to more accurately reflect the environment density difference of the two sides of the to-be-corrected pattern 1, the difference value of the pattern distribution density of the first side edge 101 and the pattern distribution density of the second side edge 102 determined above can also be determined as the first pattern difference value of the two sides of the to-be-corrected pattern 1. Optionally, the second pattern difference value can be determined based on the difference of the size information (such as pattern width, length, etc.) of the first adjacent pattern 201 (i.e. the target pattern on one side of the to-be-corrected pattern) in the first pattern 2 and the size information of the second adjacent pattern 301 (i.e. the target pattern on the other side of the to-be-corrected pattern) in the second pattern 3. Further, the compensation parameter corresponding to the two sides of the to-be-corrected pattern is determined based on the first pattern difference value and the second pattern difference value.

[0077] In an example embodiment, the determining the second graphic difference value corresponding to the to-be-corrected graphic based on the size information of the target graphics on the two sides of the to-be-corrected graphic comprises: determining the size information of the to-be-corrected graphic; determining the second graphic difference value corresponding to the to-be-corrected graphic based on the size information of the target graphic on the first side, the size information of the target graphic on the second side, and the size information of the to-be-corrected graphic, wherein the second graphic difference value represents the difference degree of the size information of the target graphics on the first side and the second side and the to-be-corrected graphic. Optionally, in the case that other parameters in the attribute information of the first adjacent graphic 201 and the second adjacent graphic 301 are consistent and only the width is different, specifically, the size information comprises the graphic width; the determining the second graphic difference value corresponding to the to-be-corrected graphic based on the size information of the target graphic on the first side, the size information of the target graphic on the second side, and the size information of the to-be-corrected graphic comprises: obtaining a first difference value corresponding to the to-be-corrected graphic based on the width of the target graphic on the first side and the width of the to-be-corrected graphic; obtaining a second difference value corresponding to the to-be-corrected graphic based on the width of the target graphic on the second side and the width of the to-be-corrected graphic; and determining the second graphic difference value of the two sides of the to-be-corrected graphic according to the first difference value and the second difference value, wherein the second graphic difference value represents the difference degree of the width of the target graphic on the first side, the width of the target graphic on the second side, and the width of the to-be-corrected graphic. Specifically, the second graphic difference value is determined based on the difference value (i.e., the first difference value) between the width of the first adjacent graphic 201 (i.e., the target graphic on the first side) and the width of the to-be-corrected graphic 1, and the difference value (i.e., the second difference value) between the width of the second adjacent graphic 301 (i.e., the target graphic on the second side) and the width of the to-be-corrected graphic 1, such as the difference value between the first difference value and the second difference value can be taken as the second graphic difference value, and in consideration of the distance between the first adjacent graphic 201 and the to-be-corrected graphic 1 and the distance between the second adjacent graphic 301 and the to-be-corrected graphic 1, the distance between the first adjacent graphic 201, the second adjacent graphic 301, and the to-be-corrected graphic 1 can also be taken as a weight term, and the second graphic difference value is determined by the difference value between the product of the first difference value and the corresponding weight term and the product of the second difference value and the corresponding weight term. For example, the weight term corresponding to the distance between the first adjacent graphic 201 and the to-be-corrected graphic 1 is set as w1, the weight term corresponding to the distance between the second adjacent graphic 301 and the to-be-corrected graphic 1 is set as w2, the first difference value is denoted as Ad1, and the second difference value is denoted as Ad2, then the second graphic difference value = Ad2*w2-Ad1*w1.

[0078] The above is the case when the first adjacent pattern 201 and the second adjacent pattern 301 only have a width difference. When there are other attribute information differences between the two, other attribute information also needs to be considered for the impact on the subsequent compensation parameter, such as position information. When the width is constant, the closer the adjacent pattern to the to-be-corrected pattern 1, the greater the stress impact on the to-be-corrected pattern 1. Subsequently, whether the surrounding environment on both sides of the to-be-corrected pattern 1 is consistent can be determined by comprehensively considering the first pattern difference value and the second pattern difference value.

[0079] In another exemplary embodiment, the compensation parameter includes a length difference value of the compensation patterns on both sides of the to-be-corrected pattern, and the compensation patterns are used to compensate the end of the to-be-corrected pattern. Step S305 can be specifically described as: determining a first compensation pattern and a second compensation pattern corresponding to both sides of the to-be-corrected pattern; determining a length difference value of the first compensation pattern and the second compensation pattern based on the first pattern difference value and the second pattern difference value, to obtain the length difference value of the compensation patterns on both sides of the to-be-corrected pattern. Please refer to Figure 4 , the to-be-corrected pattern 1 is provided with a compensation pattern, such as a first compensation pattern 4 on the first side 101, a second compensation pattern 5 on the second side 102, and a third compensation pattern 6 on the line end 103. When the surrounding environment on both sides of the to-be-corrected pattern 1 is different, the length (i.e. the length along the y-axis) of the first compensation pattern 4 is not equal to the length of the second compensation pattern 5, that is, the first compensation pattern 4 and the second compensation pattern 5 are not symmetric about the center axis of the to-be-corrected pattern 1. At this time, the difference between the length of the first compensation pattern 4 and the length of the second compensation pattern 5 is the length difference value of the compensation patterns on both sides of the to-be-corrected pattern 1, which can be denoted as Δy. Optionally, Δy can be determined based on an empirical model. The compensation patterns on both sides of the to-be-corrected pattern 1 can be determined based on the traditional OPC method, such as possibly first obtaining Figure 5In the case shown, the lengths of the first compensation pattern 4 and the second compensation pattern 5 are equal and symmetrical to the center axis of the to-be-corrected pattern 1, and then the length difference of the compensation patterns on both sides is determined based on the above-mentioned surrounding environment condition to adjust the length of the first compensation pattern 4, and finally the compensation patterns on both sides of the to-be-corrected pattern 1 are determined. It can also be that the related parameters of the above-mentioned surrounding environment condition are directly input into the empirical model (which can also be based on other models to automatically detect and identify the surrounding environment condition of the to-be-corrected pattern 1 and input the output result into the empirical model), and then the preliminary Δy can be output. Subsequently, the to-be-corrected pattern 1 is corrected based on Δy, and then the simulated lithography is performed based on the corrected layout to determine whether the target simulation pattern 7 after simulated lithography meets the preset condition. If not, Δy needs to be adjusted until the target simulation pattern 7 meets the preset condition. The above-mentioned empirical model can be a model that can describe the quantitative relationship between the surrounding environment condition of the to-be-corrected pattern and the compensation parameter. Optionally, the empirical model can be a neural network model. Optionally, the model for detecting the surrounding environment condition of the to-be-corrected pattern 1 can be integrated into the empirical model.

[0080] S307: correcting the to-be-corrected pattern based on the compensation parameter.

[0081] Specifically, the control points of the to-be-corrected pattern 1 can be determined based on the compensation parameter, for example, Figure 4 As shown, the control points B and C can be determined based on Δy and the correction model. Since the to-be-corrected pattern 1 is rasterized during the correction process, the control points B and C are grid points on the grid, which are used to determine the segmentation points for moving the rasterized to-be-corrected pattern 1 in segments. For example, the correction model can move the O2B segment and the O2C segment as a whole, thereby forming the required compensation pattern. The pattern corrected based on the existing OPC method can be as shown Figure 5 As shown, the lengths of the compensation patterns corresponding to the O1B segment and the O1A segment are equal, and the correction model can be a traditional OPC correction model, so the detailed correction process is not described here.

[0082] The present application determines the above-mentioned compensation parameter first, and then determines the control points based on the compensation parameter, and finally determines the compensation pattern of the to-be-corrected pattern 1 based on the traditional OPC correction model, so that the pattern of the to-be-corrected pattern 1 after final correction has a better appearance when imaged on a wafer.

[0083] In an exemplary embodiment, after step S307, the method further comprises: performing a simulation lithography process on the target layout to obtain a target simulation pattern; if the target simulation pattern satisfies a preset pattern condition, outputting a first correction result; the first correction result represents that the correction of the to-be-corrected pattern is completed; if the target simulation pattern does not satisfy the preset pattern condition, repeatedly adjusting the compensation parameter, correcting the to-be-corrected pattern based on the adjusted compensation parameter, and performing the simulation lithography process on the target layout until the target simulation pattern satisfies the preset pattern condition. Optionally, the preset pattern condition at least includes a first preset pattern condition, a second preset pattern condition, and a third preset pattern condition. The first preset pattern condition can be that a curvature radius corresponding to the contour of the target simulation pattern 7 is greater than or equal to a preset curvature radius. The second preset pattern condition can be that an offset between the vertex of the end of the target simulation pattern 7 and the center axis of the to-be-corrected pattern 1 is less than or equal to a first preset threshold. The third preset pattern condition can be that an edge placement error corresponding to the target simulation pattern 7 is less than or equal to a second preset threshold.

[0084] In an exemplary embodiment, after step S307, it is further needed to judge whether the target simulation pattern 7 corresponding to the corrected to-be-corrected pattern 1 meets the expectation. The target simulation pattern 7 can be a pattern obtained by transferring the corrected to-be-corrected pattern 1 to a simulation wafer through a simulation exposure and development process. Optionally, it can be judged whether the target simulation pattern 7 satisfies one or more of the above-mentioned first preset pattern condition, the second preset pattern condition, and the third preset pattern condition. In order to make the accuracy of the target simulation pattern 7 higher, the above-mentioned first preset pattern condition, the second preset pattern condition, and the third preset pattern condition can be simultaneously used as the judgment condition for judging whether the target simulation pattern 7 meets the expectation, that is, after obtaining the target simulation pattern 7, the contour of the target simulation pattern 7 is determined, and then the curvature radius corresponding thereto is judged. At the same time, the offset (i.e., Δx) between the vertex (such as O1 or O2) of the end of the target simulation pattern 7 and the center axis of the to-be-corrected pattern 1 is calculated, and the edge placement error (EPE) corresponding to the target simulation pattern 7 and the to-be-corrected pattern 1 is calculated. When the curvature radius is greater than or equal to the preset curvature radius, Δx is less than or equal to the first preset threshold, and EPE is less than or equal to the second preset threshold (or is within a suitable threshold range), the first correction result is outputted. Otherwise, the second correction result is outputted, and Δy needs to be adjusted until the target simulation pattern 7 satisfies the above-mentioned three preset pattern conditions.

[0085] From Figure 5It can be seen that after correction using the existing OPC method, the vertex O1 of the corresponding target simulated pattern 7 does not coincide with the central axis of the pattern, that is, Δx is greater than zero. Therefore, the final pattern formed on the wafer after actual photolithography and etching of the layout based on this OPC method correction also exhibits curvature and poor accuracy. Furthermore, from... Figure 6 It can be seen that, Figure 6 Curve a in the middle is Figure 4 The outline curve of the end of the figure in the middle, curve b is Figure 5 By comparing the contour curves at the ends of the figures, it can be seen that... Figure 4 and Figure 5 The second compensation figure 5 in the figure has the same length, which is y1. Figure 4 The length of the first compensation figure 4 in the diagram is y2. Figure 5 The length of the first compensation figure 4 is y1, and y2 is greater than y1, and... Figure 4 Vertex O2 of the target simulation graphic 7 in the image is... Figure 5 The vertices O1 of the target simulation graphic 7 do not coincide, and the distance between them is the aforementioned Δx. Based on the scheme of this application, the end graphics of the target simulation graphic 7 are more symmetrical. In this application, O2 coincides with the central axis of the graphic 1 to be corrected, and further comparisons are made. Figure 2 and Figure 7 It can be seen that the actual shape of the figure to be corrected 1 obtained by adopting the scheme of this application is better, such as no bending, and the figure to be corrected 1 is axially symmetric. In the process of continuously adjusting Δy, the closer Δx is to zero, the closer the radius of the curvature circle is to infinity (the radius of the curvature circle of a straight line is generally infinite).

[0086] Generally, the greater the difference in the surrounding environment on both sides of the graphic to be corrected 1, the greater Δy will be. For example, if other influencing parameters are constant, the greater the density of the graphic distribution of the first pattern 2, the longer the length of the first compensation graphic 4 of the first side 101 will be. If other influencing parameters are constant, the wider the width of the first neighboring graphic 201 in the first pattern 2 compared to the graphic to be corrected, the longer the length of the first compensation graphic 4 of the first side 101 will be. If other influencing parameters are constant, the closer the auxiliary graphic adjacent to the first side 101 is to the first side 101, the longer the length of the first compensation graphic 4 of the first side 101 will be. Of course, there are also the effects of parameters such as the position of the first neighboring graphic 201. For example, the more the first neighboring graphic 201 overlaps with the first side 101, the longer the length of the first compensation graphic 4 of the first side 101 will be.

[0087] It is understandable that the above Figure 4 and Figure 5Only the shape of the compensation pattern of the upper half of the to-be-corrected pattern 1 is shown, actually, the compensation pattern of the lower half of the to-be-corrected pattern 1 is the same as that of the upper half due to the influence of the surrounding environment as shown in the figure, that is, the length of the compensation pattern of the first side edge 101 is greater than that of the second side edge 102. Figure 1 Only the shape of the compensation pattern of the upper half of the to-be-corrected pattern 1 is shown, actually, the compensation pattern of the lower half of the to-be-corrected pattern 1 is the same as that of the upper half due to the influence of the surrounding environment as shown in the figure, that is, the length of the compensation pattern of the first side edge 101 is greater than that of the second side edge 102. Figure 4 The above mainly describes the correction process of one to-be-corrected pattern 1 in the layout, when multiple to-be-corrected patterns 1 are contained, one by one correction can be used, or multiple together correction can be used to improve the correction effect.

[0088] In another aspect, the application also provides a mask manufacturing method, which is based on the layout corrected by the above-mentioned optical proximity effect correction method to manufacture a mask, and then the wafer can be subjected to photolithography processing based on the mask to transfer the pattern on the mask to the wafer.

[0089] Corresponding to the optical proximity effect correction method provided by the above-mentioned several embodiments, the application also provides an optical proximity effect correction device, since the optical proximity effect correction device provided by the application corresponds to the optical proximity effect correction method provided by the above-mentioned several embodiments, the implementation modes of the above-mentioned optical proximity effect correction method are also applicable to the optical proximity effect correction device provided by the application, which will not be described in detail in this embodiment.

[0090] Please refer to Figure 8 , which shows the structure of an exemplary optical proximity effect correction device of the application, which has the function of realizing the optical proximity effect correction method in the above-mentioned method embodiments, which can be realized by hardware, or the corresponding software can be executed by hardware.

[0091] As shown in Figure 8 , the optical proximity effect correction device 800 can include:

[0092] The acquisition module 801 is configured to acquire a to-be-corrected layout, wherein the to-be-corrected layout includes a to-be-corrected pattern and a plurality of standard patterns.

[0093] The first determination module 803 is configured to determine the pattern information of the standard patterns around the to-be-corrected pattern.

[0094] The second determination module 805 is configured to determine the compensation parameter corresponding to the to-be-corrected pattern based on the pattern information.

[0095] The correction module 807 is configured to correct the to-be-corrected pattern based on the compensation parameter to obtain a target layout.

[0096] In an example embodiment, the graphic information of the standard graphic surrounding the to-be-corrected graphic comprises graphic information of the standard graphics on both sides of the to-be-corrected graphic; the first determining module is configured to acquire the graphic positions of the standard graphics on both sides of the to-be-corrected graphic;

[0097] determine the graphic distribution density on both sides of the to-be-corrected graphic based on the graphic positions;

[0098] determine the size information of the target graphics on both sides of the to-be-corrected graphic; the target graphics are the standard graphics adjacent to the to-be-corrected graphic.

[0099] In an example embodiment, the to-be-corrected graphic comprises opposite first and second side edges; the second determining module is configured to determine first graphic difference values corresponding to both sides of the to-be-corrected graphic based on the graphic distribution density of the first and second side edges; the first graphic difference values represent the difference degree of the standard graphics on the first and second side edges of the to-be-corrected graphic;

[0100] determine second graphic difference values corresponding to the to-be-corrected graphic based on the size information of the target graphics on both sides of the to-be-corrected graphic; the second graphic difference values represent the difference degree of the size information of the target graphics on the first and second side edges;

[0101] determine the compensation parameters corresponding to both sides of the to-be-corrected graphic according to the first and second graphic difference values.

[0102] In an example embodiment, the second determining module is configured to determine the size information of the to-be-corrected graphic;

[0103] determine second graphic difference values corresponding to the to-be-corrected graphic based on the size information of the target graphics on the first side edge, the size information of the target graphics on the second side edge, and the size information of the to-be-corrected graphic; the second graphic difference values represent the difference degree of the size information of the target graphics on the first and second side edges and the to-be-corrected graphic.

[0104] In an example embodiment, the size information comprises a graphic width; the second determining module is configured to obtain a first difference value corresponding to the to-be-corrected graphic based on the width of the target graphic on the first side edge and the width of the to-be-corrected graphic;

[0105] obtain a second difference value corresponding to the to-be-corrected graphic based on the width of the target graphic on the second side edge and the width of the to-be-corrected graphic;

[0106] determine a second pattern difference value of the to-be-corrected pattern on two sides according to the first difference value and the second difference value; the second pattern difference value represents a difference degree of a width of the target pattern on the first side and a width of the target pattern on the second side, and a width of the to-be-corrected pattern.

[0107] In an example embodiment, the compensation parameter includes a length difference value of a compensation pattern on two sides of the to-be-corrected pattern, and the compensation pattern is used to compensate an end of the to-be-corrected pattern; the second determining module is configured to determine a first compensation pattern and a second compensation pattern corresponding to the two sides of the to-be-corrected pattern.

[0108] determine a length difference value of the first compensation pattern and the second compensation pattern based on the first pattern difference value and the second pattern difference value, to obtain the length difference value of the compensation pattern on the two sides of the to-be-corrected pattern.

[0109] In an example embodiment, the to-be-corrected pattern is a strip pattern; the pattern information of the standard pattern around the to-be-corrected pattern includes pattern information of the standard pattern on the two sides of the to-be-corrected pattern.

[0110] The determining the compensation parameter corresponding to the to-be-corrected pattern based on the pattern information includes: when the pattern information of the standard pattern on the two sides of the to-be-corrected pattern is inconsistent, determining the compensation parameter corresponding to the to-be-corrected pattern based on the pattern information of the standard pattern on the two sides of the to-be-corrected pattern.

[0111] In an example embodiment, the method further includes:

[0112] performing simulation lithography processing on the target layout to obtain a target simulation pattern;

[0113] if the target simulation pattern satisfies a preset pattern condition, output a first correction result; the first correction result represents that the to-be-corrected pattern is corrected.

[0114] if the target simulation pattern does not satisfy the preset pattern condition, repeatedly adjust the compensation parameter, correct the to-be-corrected pattern based on the adjusted compensation parameter, and perform the simulation lithography processing on the target layout until the target simulation pattern satisfies the preset pattern condition.

[0115] In an example embodiment, the preset pattern condition includes: a curvature radius corresponding to an outline of the target simulation pattern is greater than or equal to a preset curvature radius, and / or an offset between a vertex of an end of the target simulation pattern and a center axis of the to-be-corrected pattern is less than or equal to a first preset threshold.

[0116] In one exemplary embodiment, the preset pattern condition further comprises: an edge placement error corresponding to the target simulation pattern is less than or equal to a second preset threshold.

[0117] It should be noted that the apparatus provided in the above embodiments, when realizing its functions, only divides the above-mentioned various functional modules by way of example, and in actual application, the above-mentioned functions can be completed by different functional modules according to needs, that is, the internal structure of the device is divided into different functional modules to complete all or part of the above-described functions. In addition, the apparatus and method embodiments provided in the above embodiments belong to the same concept, and the specific implementation process is detailed in the method embodiments, which will not be described here.

[0118] In the embodiments of the present application, the term "module" or "unit" refers to a computer program or a part of a computer program with a predetermined function, and works together with other related parts to achieve a predetermined target, and can be implemented entirely or partially by using software, hardware (such as a processing circuit or a memory) or a combination thereof. Similarly, one processor (or multiple processors or memories) can be used to implement one or more modules or units. In addition, each module or unit can be a part of an overall module or unit that includes the functions of the module or unit.

[0119] The embodiments of the present application provide an electronic device, which includes a processor and a memory, the memory stores at least one instruction or at least one program, the at least one instruction or the at least one program is loaded and executed by the processor to implement any one of the optical proximity effect correction methods provided in the above method embodiments.

[0120] The memory can be used to store software programs and modules, and the processor can execute various function applications and data processing by running the software programs and modules stored in the memory. The memory can mainly include a program storage area and a data storage area, wherein the program storage area can store an operating system, application programs required by functions, etc.; the data storage area can store data created according to the use of the device, etc. In addition, the memory can include a high-speed random access memory, and can also include a non-volatile memory, such as at least one magnetic disk storage device, a flash memory device, or other volatile solid-state memory device. Accordingly, the memory can also include a memory controller to provide access for the processor to the memory.

[0121] The method embodiments provided in the embodiments of the present application can be executed in a computer terminal, a server or a similar computing device, that is, the above-mentioned electronic device can include a computer terminal, a server or a similar computing device. Figure 9is a hardware structure block diagram of an exemplary electronic device for performing the optical proximity correction method in the present application. The electronic device mainly comprises a memory 901, a processor 902, a bus 903, and a computer program stored in the memory 901 and executable on the processor 902, and the memory 901 and the processor 902 are connected through the bus 903. When the processor 902 executes the computer program, the content operation method in the foregoing embodiments is implemented. The number of processors can be one or more.

[0122] The memory 901 can be a high-speed random access memory (RAM) or a non-volatile memory such as a disk memory. The memory 901 is used to store executable program codes, and the processor 902 is coupled with the memory 901.

[0123] The embodiments of the present application also provide a computer readable storage medium which can be arranged in the electronic device to save at least one instruction or at least one program for implementing the optical proximity correction method. The at least one instruction or the at least one program is loaded and executed by the processor to implement any one of the optical proximity correction methods provided in the foregoing method embodiments.

[0124] The embodiments of the present application also provide a computer program product or a computer program which comprises computer instructions stored in a computer readable storage medium. The processor of the electronic device reads the computer instructions from the computer readable storage medium, and the processor executes the computer instructions to enable the electronic device to perform any one of the optical proximity correction methods provided in the foregoing method embodiments.

[0125] Optionally, in the present embodiment, the storage medium can include but is not limited to a U disk, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk, and various media which can store program codes.

[0126] It should be noted that the above-mentioned order of the embodiments of the present application is only for description, and does not represent the advantages and disadvantages of the embodiments. And the above describes the specific embodiments of the present application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be executed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multi-task processing and parallel processing are possible or can be advantageous.

[0127] Each of the embodiments in the specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other. Each embodiment focuses on the difference from other embodiments. In particular, for the device embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the part of the method embodiments.

[0128] A person of ordinary skill in the art can understand that all or part of the steps of the above-mentioned embodiments can be completed by hardware, or by program instructing relevant hardware to complete, and the program can be stored in a computer readable storage medium. The storage medium mentioned above can be a read-only memory, a magnetic disk or an optical disk.

[0129] The above is only the preferred embodiment of the present application, and is not used to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for correcting the optical proximity effect, characterized in that, include: Obtain the layout to be corrected, which includes the graphic to be corrected and multiple standard graphics; Determine the graphic information of the standard graphics surrounding the graphic to be corrected; Based on the graphic information, determine the compensation parameters corresponding to the graphic to be corrected; The target layout is obtained by correcting the graphic to be corrected based on the compensation parameters.

2. The correction method according to claim 1, characterized in that, The graphic information of the standard graphics surrounding the graphic to be corrected includes the graphic information of the standard graphics on both sides of the graphic to be corrected; The determination of graphic information of the standard graphics surrounding the graphic to be corrected includes: Obtain the graphic positions of each standard graphic on both sides of the graphic to be corrected; The density of graphic distribution on both sides of the graphic to be corrected is determined based on the graphic position; Determine the size information of the target graphics on both sides of the graphic to be corrected; the target graphics are the graphics adjacent to the graphic to be corrected in the standard graphics.

3. The correction method according to claim 2, characterized in that, The graphic to be corrected includes a first side and a second side; determining the compensation parameters corresponding to the graphic to be corrected based on the graphic information includes: Based on the graphic distribution density of the first side and the second side, a first graphic difference value is determined corresponding to the two sides of the graphic to be corrected; the first graphic difference value characterizes the degree of density difference between the standard graphic on the first side and the standard graphic on the second side of the graphic to be corrected. Based on the size information of the target graphics on both sides of the graphic to be corrected, a second graphic difference value corresponding to the graphic to be corrected is determined. The second graphic difference value characterizes the degree of difference in size information of the target graphics on the first side and the second side. Based on the first graphic difference value and the second graphic difference value, the compensation parameters for both sides corresponding to the graphic to be corrected are determined.

4. The correction method according to claim 3, characterized in that, The step of determining the second graphic difference value corresponding to the graphic to be corrected based on the size information of the target graphics on both sides of the graphic to be corrected includes: Determine the size information of the graphic to be corrected; Based on the size information of the target graphic on the first side, the size information of the target graphic on the second side, and the size information of the graphic to be corrected, a second graphic difference value is determined corresponding to the graphic to be corrected. The second graphic difference value characterizes the degree of difference in size information between the target graphic on the first side and the second side and the graphic to be corrected.

5. The correction method according to claim 4, characterized in that, The size information includes the graphic width; determining the second graphic difference value corresponding to the graphic to be corrected based on the size information of the target graphic on the first side, the size information of the target graphic on the second side, and the size information of the graphic to be corrected includes: Based on the width of the target graphic on the first side and the width of the graphic to be corrected, a first difference value corresponding to the graphic to be corrected is obtained; Based on the width of the target graphic on the second side and the width of the graphic to be corrected, a second difference value corresponding to the graphic to be corrected is obtained; Based on the first difference and the second difference, a second graphic difference value is determined on both sides of the graphic to be corrected; the second graphic difference value characterizes the difference between the width of the target graphic on the first side and the width of the target graphic on the second side, as well as the degree of difference in the width of the graphic to be corrected.

6. The correction method according to claim 3, characterized in that, The compensation parameter includes the length difference between the compensation graphics on both sides of the graphic to be corrected, and the compensation graphics are used to compensate the ends of the graphic to be corrected. The step of determining the compensation parameters corresponding to the graphic to be corrected based on the graphic information includes: Determine the first compensation pattern and the second compensation pattern corresponding to both sides of the pattern to be corrected; Based on the first graphic difference value and the second graphic difference value, the length difference between the first compensation graphic and the second compensation graphic is determined, and the length difference between the compensation graphics on both sides of the graphic to be corrected is obtained.

7. The correction method according to claim 1, characterized in that, The graphic to be corrected is a strip graphic; the graphic information of the standard graphics surrounding the graphic to be corrected includes the graphic information of the standard graphics on both sides of the graphic to be corrected; The step of determining the compensation parameter corresponding to the graphic to be corrected based on the graphic information includes: when it is determined that the graphic information of the standard graphics on both sides of the graphic to be corrected is inconsistent, determining the compensation parameter corresponding to the graphic to be corrected based on the graphic information of the standard graphics on both sides of the graphic to be corrected.

8. The correction method according to claim 1, characterized in that, The method further includes: The target layout is subjected to simulated photolithography to obtain a target simulated pattern; If the target simulated graphic meets the preset graphic conditions, a first correction result is output; the first correction result indicates that the graphic to be corrected has been corrected. If the target simulated graphic does not meet the preset graphic conditions, the compensation parameters are repeatedly adjusted, the graphic to be corrected is corrected based on the adjusted compensation parameters, and the target layout is subjected to simulated lithography processing until the target simulated graphic meets the preset graphic conditions.

9. The correction method according to claim 8, characterized in that, The preset graphic conditions include: the radius of curvature circle corresponding to the contour of the target simulated graphic is greater than or equal to the preset radius of curvature circle, and / or, the offset between the vertex of the end of the target simulated graphic and the central axis of the graphic to be corrected is less than or equal to a first preset threshold.

10. The correction method according to claim 8, characterized in that, The preset graphic conditions also include: the edge placement error corresponding to the target simulated graphic is less than or equal to the second preset threshold.

11. A method for fabricating a mask, characterized in that, The mask is fabricated from the layout after the layout is corrected based on the optical proximity effect correction method as described in any one of claims 1-10.

12. A device for correcting optical proximity effect, characterized in that, The device includes: The acquisition module is used to acquire the layout to be corrected, which includes the graphic to be corrected and multiple standard graphics. The first determining module is used to determine the graphic information of the standard graphics surrounding the graphic to be corrected; The second determining module is used to determine the compensation parameters corresponding to the graphic to be corrected based on the graphic information. The correction module is used to correct the graphic to be corrected based on the compensation parameters to obtain the target layout.

13. An electronic device, characterized in that, It includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, the at least one instruction or the at least one program being loaded and executed by the processor to implement the method for correcting the optical proximity effect as described in any one of claims 1 to 10.

14. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores at least one instruction or at least one program, which is loaded and executed by a processor to implement the optical proximity effect correction method as described in any one of claims 1 to 10.

Images