Semiconductor etching processing equipment

Abstract

The invention relates to the technical field of semiconductor processing, in particular to semiconductor etching processing equipment which comprises an etching box, a drain outlet is formed in the bottom of the etching box, a net plate is fixed in the etching box, supporting seats which are symmetrically distributed are fixed to the outer bottom of the etching box, the supporting seats are rotationally connected with rotating shafts, and sealing plates are fixed to the rotating shafts. The sealing plate is connected with a supporting mechanism, the supporting mechanism is used for supporting the sealing plate, a cleaning mechanism is arranged on the side, close to the drain outlet, of the screen plate, a liquid inlet pipe and a liquid outlet pipe are connected to the side, away from the drain outlet, of the screen plate and the side wall of the etching box, a moving plate is arranged in the etching box, and the moving plate is connected with a lifting plate through a lifting mechanism. The bottom of the lifting plate is connected with a plurality of adsorption plates distributed in an array mode. According to the invention, rapid centralized discharge of waste materials is realized, closed-loop operation from etching to cleaning is completed in a single device in the whole process, the automation degree is high, and the etching rate and the product yield are effectively guaranteed.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, specifically a semiconductor etching processing equipment. Background Technology

[0002] Semiconductor etching includes wet etching and dry etching. Wet etching involves using a specific chemical solution to produce a controlled chemical reaction with the wafer surface material. By converting the exposed solid material into a soluble compound and dissolving it in the solution, the material can be selectively removed.

[0003] Existing wet etching technology mainly relies on static immersion or unidirectional wafer movement, which causes the chemical solution to form a diffusion boundary layer on the wafer surface. This results in insufficient exchange between reactants and byproducts, easily causing problems such as uneven etching, bubble retention, and contaminant adhesion, which seriously affect etching accuracy and yield. At the same time, the treatment of waste liquid after etching and equipment cleaning often rely on manual labor or independent equipment, which is cumbersome and inefficient, making it difficult to achieve efficient and automated closed-loop production management. Summary of the Invention

[0004] The purpose of this invention is to provide a semiconductor etching process apparatus to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution: A semiconductor etching processing device includes an etching chamber with a drain port at the bottom. A mesh plate is fixed inside the etching chamber. Symmetrically distributed support bases are fixed to the bottom of the etching chamber. A rotating shaft is rotatably connected to the support bases. A sealing plate is fixed to the rotating shaft. The sealing plate is connected to a support mechanism for supporting the sealing plate. A cleaning mechanism is provided on the side of the mesh plate near the drain port for cleaning the surface of the mesh plate. An inlet pipe and an outlet pipe are connected to the side wall of the etching chamber on the side of the mesh plate away from the drain port. A movable plate is provided inside the etching chamber. The movable plate is connected to a moving mechanism. The movable plate is connected to a lifting plate via a lifting mechanism. Multiple adsorption plates arranged in an array are connected to the bottom of the lifting plate. The adsorption plates are connected to a swinging mechanism for reciprocating swing of the adsorption plates.

[0006] Preferably, the cleaning mechanism includes a brush plate disposed on the side of the screen plate and capable of cleaning the screen plate. The inner wall of the etching box is fixed with symmetrically distributed mounting plates. Each mounting plate has a limit rod fixed at its bottom. The limit rod passes through the brush plate and is slidably connected to the brush plate. Each limit rod is provided with a first spring on its outside. The two ends of the first spring are fixedly connected to the mounting plate and the brush plate, respectively. The brush plate is connected to a first traction component, which is used to traction the brush plate.

[0007] Preferably, the first traction assembly includes a first traction rope fixedly connected to the bottom of the brush plate, the lower end of the first traction rope being fixedly connected to the top of the sealing plate, and a first guide roller capable of guiding the first traction rope being fixed inside the etching box.

[0008] Preferably, the support mechanism includes a limiting plate fixedly connected to the bottom of the etching box, a stop rod passing through the inside of the limiting plate, the stop rod being slidably connected to the limiting plate, a stop block being fixed at the end of the stop rod, the stop block being connected to the limiting plate via a second spring, and a second traction assembly being connected to the stop block for traction.

[0009] Preferably, the second traction assembly includes mounting brackets fixedly connected to the outer wall of the etching chamber and symmetrically distributed, rotating rods rotatably connected between the mounting brackets, a take-up roller fixed to the outside of the rotating rods, a second traction rope fixedly connected to the take-up rollers, the other end of the second traction rope being fixedly connected to a stop block, a bracket fixed to the outer wall of the etching chamber, a second guide roller fixed to the end of the bracket to guide the second traction rope, symmetrically distributed levers fixed to the outside of the rotating rods, and symmetrically distributed pressing rods fixed to the side wall of the moving plate to press the levers.

[0010] Preferably, the swing mechanism includes a fixed seat fixedly connected to the top of the adsorption plate, a transmission rod fixedly connected to the fixed seat, a fixed plate fixed to the bottom of the lifting plate, the transmission rod passing through the fixed plate and rotatably connected to the fixed plate, the fixed seat being connected to the fixed plate via a second torsion spring, wherein a pressing assembly is connected to the top of the adsorption plate, the pressing assembly being used to press the adsorption plate.

[0011] Preferably, the extrusion assembly includes a first air pressure groove penetrating the bottom of the lifting plate, a first air pressure rod penetrating the bottom of the first air pressure groove, a baffle fixed to the outside of the first air pressure rod, the baffle being connected to the bottom of the lifting plate via a third spring, wherein the bottom of the first air pressure rod is in contact with the top of the adsorption plate, a second air pressure groove penetrating the side wall of the lifting plate, the second air pressure groove communicating with the first air pressure groove via an air chamber, a second air pressure rod penetrating the end of the second air pressure groove, a trapezoidal block fixed to the end of the second air pressure rod, the trapezoidal block being connected to the side wall of the lifting plate via a fourth spring, and an extrusion block capable of extruding the inclined surface of the trapezoidal block being fixed on the inner wall of the etching box.

[0012] Compared with the prior art, the beneficial effects of the present invention are as follows: The present invention utilizes the synergistic effect of lifting and swinging mechanisms to drive the wafer to move up and down and swing back and forth in the chemical solution, which can effectively break the diffusion boundary layer on the wafer surface, ensure sufficient exchange of chemical solution, thereby greatly improving the etching uniformity and successfully avoiding the retention of bubbles and contaminants. After etching is completed, the integrated filtration and cleaning mechanism of the equipment automatically performs solid-liquid separation of waste liquid and cleans particulate impurities on the filter screen, realizing the rapid centralized discharge of waste. The entire process completes the closed-loop operation from etching to cleaning in a single device, with a high degree of automation, effectively ensuring the etching rate and product yield. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the external structure of the etching box in an embodiment of the present invention.

[0014] Figure 2 This is a schematic diagram of the internal structure of the etching box in an embodiment of the present invention.

[0015] Figure 3 This is a schematic diagram of the adsorption plate connection structure in an embodiment of the present invention.

[0016] Figure 4 This is a schematic diagram of the brush plate connection structure in an embodiment of the present invention.

[0017] Figure 5 This is a schematic diagram of the sealing plate connection structure in an embodiment of the present invention.

[0018] Figure 6 This is a front view of the internal structure of the lifting plate in an embodiment of the present invention.

[0019] In the diagram: 1-Etching box, 2-Cleaning mechanism, 21-Mounting plate, 22-Limiting rod, 23-First spring, 24-Brush plate, 25-First traction rope, 26-First guide roller, 3-Support mechanism, 31-Abutting rod, 32-Limiting plate, 33-Second spring, 34-Stop block, 35-Second traction rope, 36-Second guide roller, 37-Bracket, 38-Take-up roller, 39-Mounting frame, 310-Rotating rod, 311-Pulling rod, 312-Extrusion rod, 4-Swing mechanism, 41-Fixed seat, 42-Second torsion spring, 43-Transmission rod. 44-Fixed plate, 45-First air pressure rod, 46-Baffle, 47-Third spring, 48-First air pressure groove, 49-Air chamber, 410-Second air pressure groove, 411-Trapezoidal block, 412-Fourth spring, 413-Second air pressure rod, 414-Squeezing block, 5-Inlet pipe, 6-Outlet pipe, 7-Moving mechanism, 8-Lifting mechanism, 9-Moving plate, 10-Lifting plate, 11-Mesh plate, 12-Drain outlet, 13-Sealing plate, 14-Sealing gasket, 15-Support base, 16-Rotating shaft, 17-First torsion spring, 18-Adsorption plate. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0021] The specific implementation of the present invention will be described in detail below with reference to specific embodiments.

[0022] In one embodiment, see Figure 1 , Figure 2 , Figure 3 and Figure 5 A semiconductor etching processing equipment includes an etching chamber 1, a drain port 12 at the bottom of the etching chamber 1, a mesh plate 11 fixed inside the etching chamber 1, and symmetrically distributed support bases 15 fixed at the bottom outside the etching chamber 1. A rotating shaft 16 is rotatably connected to the support bases 15, and a sealing plate 13 is fixed to the rotating shaft 16. A support mechanism 3 is connected to the sealing plate 13 to support it. A cleaning mechanism 2 is provided on the side of the mesh plate 11 near the drain port 12 to clean the surface of the mesh plate 11. An inlet pipe 5 and an outlet pipe 6 are connected to the side wall of the etching chamber 1 on the side of the mesh plate 11 away from the drain port 12. A moving plate 9 is provided inside the etching chamber 1, and a moving mechanism 7 is connected to the moving plate 9. A lifting plate 10 is connected to the moving plate 9 via a lifting mechanism 8. Multiple adsorption plates 18 arranged in an array are connected to the bottom of the lifting plate 10. A swing mechanism 4 is connected to the adsorption plates 18 to drive them to swing back and forth.

[0023] In this embodiment, when the processing equipment is in use, the wafer is placed on the support platform surface on the side of the etching chamber 1 (the support platform is not shown in the figure). The moving mechanism 7 drives the moving plate 9 to move above the wafer, and then the lifting mechanism 8 drives the lifting plate 10 to move downward. When the adsorption plate 18 is in contact with the wafer surface, the wafer is adsorbed by vacuum adsorption. Then, the lifting mechanism 8 and the moving mechanism 7 drive the wafer to move into the etching chamber 1. The lifting mechanism 8 can be a telescopic rod, and the moving mechanism 7 can be a guide rail or a threaded rod. These are all existing technologies and will not be described in detail here. When the wafer moves into the etching chamber 1, a certain amount of chemical solution is injected into the etching chamber 1 through the liquid inlet pipe 5. Then, the lifting mechanism 8 drives the lifting plate 10 downward. The wafer at the bottom of the adsorption plate 18 is moved so that it can be immersed in the reaction solution inside the etching chamber 1. A specific chemical solution (such as acid or alkali) is used to dissolve specific materials on the wafer surface through a chemical reaction, thereby achieving the purpose of wafer etching. During the wafer etching process, the lifting mechanism 8 drives the lifting plate 10 to move slightly up and down, allowing the wafer to move slightly up and down within the chemical solution. During this up-and-down movement, the swing mechanism 4 also drives the adsorption plate 18 to swing back and forth, ensuring that the wafer moves up and down within the chemical solution while simultaneously oscillating. This effectively improves etching uniformity and prevents the retention of bubbles and contaminants, ensuring the etching rate. After the wafer etching is complete, the lifting mechanism 8... The lifting plate 10 moves upward. When the wafer moves above the chemical solution, the chemical solution after the reaction is discharged from the etching chamber 1 through the outlet pipe 6. The etching chamber 1 is equipped with a mesh plate 11, which filters the chemical solution after the reaction to remove particulate impurities generated during the reaction. After the chemical solution is discharged, the moving mechanism 7 drives the moving plate 9 to move horizontally, so that the etched wafer can move to the next station. During the movement of the moving plate 9, the support mechanism 3 no longer supports the sealing plate 13. The sealing plate 13 automatically rotates downward under the action of the first torsion spring 17, so that the drain port 12 is in the open state. At the same time, the cleaning mechanism 2 automatically cleans the particulate impurities adsorbed on the surface of the mesh plate 11. The waste is automatically discharged from the drain outlet 12. In addition, to ensure the sealing effect of the sealing plate 13 on the drain outlet 12, a sealing gasket 14 is fixed on the top of the sealing plate 13. That is, the present invention utilizes the synergistic effect of the lifting and swinging mechanism 4 to drive the wafer to move up and down and swing back and forth in the chemical solution, which can effectively break the diffusion boundary layer on the wafer surface, ensure sufficient exchange of chemical solution, thereby greatly improving the etching uniformity and successfully avoiding the retention of bubbles and contaminants. After etching, the integrated filtration and cleaning mechanism of the equipment automatically performs solid-liquid separation of waste liquid and cleans particulate impurities on the filter screen, realizing the rapid centralized discharge of waste. The entire process completes the closed-loop operation from etching to cleaning in a single device, with a high degree of automation, effectively ensuring the etching rate and product yield.

[0024] Please see Figure 4 The cleaning mechanism 2 includes a brush plate 24 disposed on the side of the mesh plate 11 and capable of cleaning the mesh plate 11. The inner wall of the etching box 1 is fixed with symmetrically distributed mounting plates 21. Each mounting plate 21 has a limit rod 22 fixed at its bottom. The limit rod 22 passes through the brush plate 24 and is slidably connected to the brush plate 24. Each limit rod 22 is provided with a first spring 23 on its outside. The two ends of the first spring 23 are fixedly connected to the mounting plate 21 and the brush plate 24, respectively. The brush plate 24 is connected to a first traction assembly, which is used to traction the brush plate 24.

[0025] After the chemical solution is discharged, the moving mechanism 7 drives the moving plate 9 to move horizontally, thereby enabling the etched wafer to move to the next station. During the movement of the moving plate 9, the support mechanism 3 no longer supports the sealing plate 13. The sealing plate 13 automatically rotates downward under the action of the first torsion spring 17, thereby opening the drain port 12. At the same time, the first traction component pulls the brush plate 24, causing the brush plate 24 to move downward along the mesh plate 11. The brush plate 24 cleans the impurities adsorbed on the surface of the mesh plate 11, enabling the waste to be quickly and centrally discharged, realizing efficient and automated closed-loop production management. The limiting rod 22 can limit the brush plate 24, improving the stability of the brush plate 24 during movement, while the first spring 23 can reset the brush plate 24.

[0026] Please see Figure 4 The first traction assembly includes a first traction rope 25 fixedly connected to the bottom of the brush plate 24, the lower end of the first traction rope 25 being fixedly connected to the top of the sealing plate 13, and a first guide roller 26 capable of guiding the first traction rope 25 being fixed inside the etching box 1. During the movement of the moving plate 9, the support mechanism 3 no longer supports the sealing plate 13. The sealing plate 13 automatically rotates downward under the action of the first torsion spring 17. While the sealing plate 13 rotates downward, it pulls the first traction rope 25. Under the guidance of the first guide roller 26, the first traction rope 25 can drive the brush plate 24 to move downward and realize the automatic cleaning of the mesh plate 11.

[0027] Please see Figure 5 The support mechanism 3 includes a limiting plate 32 fixedly connected to the bottom of the etching box 1. A stop rod 31 passes through the inside of the limiting plate 32. The stop rod 31 is slidably connected to the limiting plate 32. A stop block 34 is fixed at the end of the stop rod 31. The stop block 34 is connected to the limiting plate 32 through a second spring 33. The stop block 34 is connected to a second traction component, which is used to traction the stop block 34.

[0028] After the chemical solution is discharged, the moving mechanism 7 drives the moving plate 9 to move horizontally, so that the etched wafer can move to the next station. During the movement of the moving plate 9, the second traction component pulls the stop block 34, and the stop block 34 drives the abutment rod 31 to move until the abutment rod 31 no longer supports the sealing plate 13. Without the support of the abutment rod 31, the sealing plate 13 automatically rotates downward under the action of the first torsion spring 17, so that the drain port 12 is in the open state, which facilitates the discharge of particulate impurities inside the etching box 1. When the second traction component no longer pulls the stop block 34, the abutment rod 31 automatically resets under the action of the second spring 33. At the same time as the abutment rod 31 resets, the abutment rod 31 squeezes the sealing plate 13, so that the sealing plate 13 rotates upward and seals the drain port 12 again.

[0029] Please see Figure 3 and Figure 5 The second traction assembly includes mounting brackets 39 that are fixedly connected to the outer wall of the etching box 1 and are symmetrically distributed. A rotating rod 310 is rotatably connected between the mounting brackets 39. A take-up roller 38 is fixed to the outside of the rotating rod 310. A second traction rope 35 is fixedly connected to the take-up roller 38. The other end of the second traction rope 35 is fixedly connected to a stop block 34. A bracket 37 is fixed to the outer wall of the etching box 1. A second guide roller 36 that can guide the second traction rope 35 is fixed to the end of the bracket 37. A lever 311 that is symmetrically distributed is fixed to the outside of the rotating rod 310. A pressing rod 312 that is symmetrically distributed and can press the lever 311 is fixed to the side wall of the moving plate 9.

[0030] After the chemical solution is discharged, the moving mechanism 7 drives the moving plate 9 to move horizontally, so that the etched wafer can move to the next station. During the movement of the moving plate 9, the pressing rod 312 on the side wall of the moving plate 9 will press the lever 311, so that the lever 311 drives the rotating rod 310 to rotate. While the rotating rod 310 rotates, the second traction rope 35 is wound up by the winding roller 38. Under the guidance of the second guide roller 36, the second traction rope 35 pulls the stop block 34 while being wound up, so that the abutment rod 31 can no longer support the sealing plate 13.

[0031] Please see Figure 6 The swing mechanism 4 includes a fixed base 41 fixedly connected to the top of the adsorption plate 18, and a transmission rod 43 fixedly connected to the fixed base 41. A fixed plate 44 is fixedly fixed to the bottom of the lifting plate 10. The transmission rod 43 passes through the fixed plate 44 and is rotatably connected to the fixed plate 44. The fixed base 41 is connected to the fixed plate 44 through a second torsion spring 42. A pressing assembly is connected to the top of the adsorption plate 18. The pressing assembly is used to press the adsorption plate 18.

[0032] During the wafer etching process, the lifting mechanism 8 drives the lifting plate 10 to move slightly up and down, allowing the wafer to move slightly up and down inside the chemical solution. When the wafer moves downward, the extrusion assembly extrudes the adsorption plate 18, causing the adsorption plate 18 to swing the wafer downward. When the wafer moves upward, the extrusion assembly stops extruding the adsorption plate 18, and the adsorption plate 18 rotates upward under the action of the second torsion spring 42, allowing the wafer to swing upward. This cycle continues, allowing the wafer to move up and down inside the chemical solution while also swinging continuously, effectively improving the etching uniformity and preventing the retention of bubbles and contaminants, thus ensuring the etching rate.

[0033] Please see Figure 2 and Figure 6 The extrusion assembly includes a first air pressure groove 48 penetrating the bottom of the lifting plate 10, a first air pressure rod 45 penetrating the bottom of the first air pressure groove 48, a baffle 46 fixed to the outside of the first air pressure rod 45, and the baffle 46 connected to the bottom of the lifting plate 10 by a third spring 47. The bottom of the first air pressure rod 45 is in contact with the top of the adsorption plate 18. A second air pressure groove 410 penetrating the side wall of the lifting plate 10 is connected to the first air pressure groove 48 by an air cavity 49. A second air pressure rod 413 penetrating the end of the second air pressure groove 410 is fixed to the end of the second air pressure rod 413. A trapezoidal block 411 is fixed to the end of the second air pressure rod 413. The trapezoidal block 411 is connected to the side wall of the lifting plate 10 by a fourth spring 412. An extrusion block 414 capable of extruding the inclined surface of the trapezoidal block 411 is fixed on the inner wall of the etching box 1.

[0034] During the wafer etching process, the lifting mechanism 8 drives the lifting plate 10 to move slightly up and down, allowing the wafer to move slightly up and down within the chemical solution. Simultaneously, the lifting plate 10 moves the trapezoidal block 411 on its side up and down. When the trapezoidal block 411 moves downwards, the pressing block 414 on the side wall of the etching chamber 1 presses against the inclined surface of the trapezoidal block 411, causing it to move the second pneumatic rod 413 into the second pneumatic groove 410. At this time, the second pneumatic rod 413 compresses the gas inside the second pneumatic groove 410, and the gas inside the second pneumatic groove 410 is released through the gas... The cavity 49 enters the first pressure groove 48. The gas inside the first pressure groove 48 increases and squeezes the first pressure rod 45, thereby causing the first pressure rod 45 to squeeze the adsorption plate 18 and cause the adsorption plate 18 to rotate downward. When the trapezoidal block 411 moves upward, the squeezing block 414 reduces the squeezing degree of the trapezoidal block 411. The trapezoidal block 411 automatically resets under the action of the fourth spring 412. The first pressure rod 45 automatically resets under the action of the baffle 46 and the third spring 47. The squeezing degree of the first pressure rod 45 on the adsorption plate 18 is reduced, thereby allowing the adsorption plate 18 to drive the wafer to swing upward under the action of the second torsion spring 42.

[0035] Working Principle: During operation, the moving mechanism 7 moves the moving plate 9 above the wafer, and the lifting mechanism 8 moves the lifting plate 10 downwards. When the adsorption plate 18 is in contact with the wafer surface, vacuum adsorption is used to adsorb the wafer. The lifting mechanism 8 and the moving mechanism 7 then move the wafer into the etching chamber 1, and a certain amount of chemical solution is injected into the etching chamber 1 through the liquid inlet pipe 5. Subsequently, the lifting mechanism 8 moves the lifting plate 10 downwards, allowing the wafer at the bottom of the adsorption plate 18 to be submerged in the reaction solution inside the etching chamber 1. During the wafer etching process, the lifting mechanism 8 moves the lifting plate 10 slightly up and down, simultaneously moving the trapezoidal block 411 on its side up and down. When the trapezoidal block 411 moves downward, the pressing block 414 on the side wall of the etching chamber 1 presses the inclined surface of the trapezoidal block 411, causing the trapezoidal block 411 to drive the second pneumatic rod 413 to move into the second pneumatic groove 410. At this time, the second pneumatic rod 413 presses the gas inside the second pneumatic groove 410. The gas inside the second pneumatic groove 410 enters the first pneumatic groove 48 through the air chamber 49. The gas inside the first pneumatic groove 48 increases and presses the first pneumatic rod 45, causing the first pneumatic rod 45 to press the adsorption plate 18 and cause the adsorption plate 18 to rotate downward. When the trapezoidal block 411 moves upward, the pressing degree of the pressing block 414 on the trapezoidal block 411 decreases, and the trapezoidal block 411 automatically resets under the action of the fourth spring 412. The first pneumatic rod 45 automatically resets under the action of the baffle 46 and the third spring 47, reducing the pressure of the first pneumatic rod 45 on the adsorption plate 18. The adsorption plate 18 rotates upward under the action of the second torsion spring 42, thereby allowing the wafer to swing upward. This cycle repeats, allowing the wafer to move up and down within the chemical solution while continuously swinging, effectively improving etching uniformity and preventing the retention of bubbles and contaminants, thus ensuring the etching rate. After the wafer etching is completed, the lifting mechanism 8 drives the lifting plate 10 upward. When the wafer moves above the chemical solution, the reacted chemical solution is discharged from the etching chamber 1 through the outlet. The etching chamber 1 is equipped with a mesh plate 11, which filters the reacted chemical solution. This removes particulate impurities generated during the reaction. After the chemical solution is discharged, the moving mechanism 7 drives the moving plate 9 to move horizontally, allowing the etched wafer to move to the next station. During the movement of the moving plate 9, the pressing rod 312 on the side wall of the moving plate 9 presses against the lever 311, causing the lever 311 to drive the rotating rod 310 to rotate. As the rotating rod 310 rotates, it winds up the second traction rope 35 through the winding roller 38. Under the guidance of the second guide roller 36, the second traction rope 35 pulls the stop block 34 while winding up. The stop block 34 drives the abutment rod 31 to move until the abutment rod 31 no longer supports the sealing plate 13. Without the support of the abutment rod 31, the sealing plate 13 automatically rotates downward under the action of the first torsion spring 17.This keeps the drain outlet 12 open, and when the sealing plate 13 rotates downwards, it pulls the first traction rope 25, which in turn pulls the brush plate 24, causing it to move downwards along the mesh plate 11. The brush plate 24 cleans the impurities adsorbed on the surface of the mesh plate 11, allowing waste to be quickly and efficiently discharged, achieving efficient and automated closed-loop production management.

[0036] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A semiconductor etching processing apparatus, comprising an etching chamber; characterized in that, The etching chamber has a drain port at the bottom and a mesh plate fixed inside. Symmetrically distributed support bases are fixed to the bottom of the etching chamber. Rotating shafts are rotatably connected to the support bases, and sealing plates are fixed to the rotating shafts. The sealing plates are connected to a support mechanism for supporting the sealing plates. A cleaning mechanism is provided on the side of the mesh plate near the drain port for cleaning the surface of the mesh plate. An inlet pipe and an outlet pipe are connected to the side wall of the etching chamber on the side of the mesh plate away from the drain port. A movable plate is provided inside the etching chamber and is connected to a movable mechanism. The movable plate is connected to a lifting plate via a lifting mechanism. Multiple adsorption plates arranged in an array are connected to the bottom of the lifting plate. The adsorption plates are connected to a swing mechanism for driving the adsorption plates to swing back and forth.

2. The semiconductor etching processing equipment according to claim 1, characterized in that, The cleaning mechanism includes a brush plate disposed on the side of the screen plate and capable of cleaning the screen plate. The inner wall of the etching box is fixed with symmetrically distributed mounting plates. Each mounting plate has a limit rod fixed at its bottom. The limit rod passes through the brush plate and is slidably connected to the brush plate. Each limit rod is provided with a first spring on its outside. The two ends of the first spring are fixedly connected to the mounting plate and the brush plate, respectively. The brush plate is connected to a first traction assembly, which is used to traction the brush plate.

3. The semiconductor etching processing equipment according to claim 2, characterized in that, The first traction assembly includes a first traction rope fixedly connected to the bottom of the brush plate, the lower end of the first traction rope being fixedly connected to the top of the sealing plate, and a first guide roller that can guide the first traction rope is fixed inside the etching box.

4. The semiconductor etching processing equipment according to claim 1, characterized in that, The support mechanism includes a limiting plate fixedly connected to the bottom of the etching box. A stop rod runs through the inside of the limiting plate and is slidably connected to the limiting plate. A stop block is fixed to the end of the stop rod and is connected to the limiting plate via a second spring. A second traction component is connected to the stop block and is used to traction the stop block.

5. A semiconductor etching processing equipment according to claim 4, characterized in that, The second traction assembly includes mounting brackets fixedly connected to the outer wall of the etching chamber and symmetrically distributed. Rotating rods are rotatably connected between the mounting brackets. A take-up roller is fixed to the outside of the rotating rod. A second traction rope is fixedly connected to the take-up roller. The other end of the second traction rope is fixedly connected to a stop block. A bracket is fixed to the outer wall of the etching chamber. A second guide roller capable of guiding the second traction rope is fixed to the end of the bracket. A lever is fixed to the outside of the rotating rod in a symmetrical arrangement. A pressing rod is fixed to the side wall of the moving plate in a symmetrical arrangement capable of pressing the lever.

6. The semiconductor etching processing equipment according to claim 1, characterized in that, The swing mechanism includes a fixed base fixedly connected to the top of the adsorption plate, a transmission rod fixedly connected to the fixed base, a fixed plate fixed to the bottom of the lifting plate, the transmission rod passing through the fixed plate and rotatably connected to the fixed plate, the fixed base being connected to the fixed plate via a second torsion spring, and a pressing assembly connected to the top of the adsorption plate for pressing the adsorption plate.

7. A semiconductor etching processing apparatus according to claim 6, characterized in that, The extrusion assembly includes a first air pressure groove penetrating the bottom of the lifting plate, a first air pressure rod penetrating the bottom of the first air pressure groove, a baffle fixed to the outside of the first air pressure rod, the baffle being connected to the bottom of the lifting plate via a third spring, wherein the bottom of the first air pressure rod is in contact with the top of the adsorption plate, a second air pressure groove penetrating the side wall of the lifting plate, the second air pressure groove communicating with the first air pressure groove via an air chamber, a second air pressure rod penetrating the end of the second air pressure groove, a trapezoidal block fixed to the end of the second air pressure rod, the trapezoidal block being connected to the side wall of the lifting plate via a fourth spring, and an extrusion block capable of extruding the inclined surface of the trapezoidal block being fixed on the inner wall of the etching box.

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