Flat plate type module structure with high heat dissipation and high mechanical strength and preparation method of flat plate type module structure
The integrated module structure of the IMS frame simplifies the heat dissipation path, and the use of copper busbars and insulating film improves mechanical strength, solving the problems of insufficient heat dissipation and mechanical strength of existing flat-panel modules, and realizing a power module with efficient heat dissipation and high reliability.
Patent Information
- Application Number
- CN202511160525.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-19
- Publication Date
- 2025-11-21
AI Technical Summary
Existing planar power modules suffer from problems such as component redundancy, heavy weight, complex assembly, complex heat dissipation paths leading to increased thermal resistance, and insufficient mechanical strength, making it difficult to meet the requirements of high vibration scenarios.
It adopts an integrated modular structure with an IMS frame, including an AlSiC stamped frame, an insulating film, and copper wiring. The chip, copper busbar, and terminals are connected by a solder layer, which simplifies the heat dissipation path. The copper busbar is used for heat conduction, and the copper wiring and insulating film enhance mechanical strength.
It achieves a flat-panel module structure with high heat dissipation, low thermal resistance, high mechanical strength, and good reliability, which reduces manufacturing costs, improves module heat dissipation capacity and power density, and avoids thermal stress accumulation and early failure.
Smart Images
Figure CN120998909A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of power module, in particular to a high-heat-dissipation high-mechanical-strength flat plate type module structure and a preparation method thereof. BACKGROUND
[0002] The flat plate type power module is a mainstream encapsulation or plastic encapsulation type, which is widely used in scenes such as energy vehicles, photovoltaic inverters and industrial frequency converters. At present, this type of encapsulation adopts a split heat dissipation design, for example, a DCB / AMB substrate + an independent heat sink + a side frame. The heat dissipation path needs to pass through a chip welding layer -> a substrate -> a solder layer -> a bottom plate -> a heat-conducting grease -> a heat sink. The complex levels result in thermal resistance stacking. Moreover, the outer wall support insulating material is usually a plastic frame made of PBT / PPS, which has weak mechanical strength and cannot provide effective heat dissipation.
[0003] The existing power module usually adopts a split structure of a heat dissipation substrate and an independent side frame, which results in component redundancy, large weight and complex assembly. The split heat dissipation design has complex levels, which results in thermal resistance stacking, limits heat conduction efficiency and causes the solder layer to fail due to thermal stress fatigue, thereby aggravating the thermal resistance rise. The CTE of the metal substrate (such as copper / aluminum, CTE≈17-23 ppm / ℃) and the CTE of the ceramic insulating layer (such as Al2O3, CTE≈7 ppm / ℃) or the plastic side frame are significantly different. Under long-term thermal cycling, interface stress accumulates, which causes the solder layer to crack and the bonding wire to fall off. The side frame structure has insufficient strength and cannot meet the needs of high-vibration scenes (such as electric vehicles and aerospace). SUMMARY
[0004] The present application aims to overcome the deficiencies in the prior art, provide a high-heat-dissipation high-mechanical-strength flat plate type module structure and a preparation method thereof, solve the problems of component redundancy, large weight and complex assembly, reduce the overall process cost, improve the heat dissipation path, reduce the module thermal resistance, improve the module heat dissipation capacity, reduce the module size, improve the actual power density of the module, improve the long-term reliability of the module and reduce the internal loop interference of the module.
[0005] The technical scheme adopted by the present application is as follows: A high-heat-dissipation high-mechanical-strength flat plate type module structure, comprising: An IMS frame, which is a frame structure with an open top and has a mounting cavity formed therein; A chip, which is arranged in the mounting cavity; A copper bar, which is arranged in the mounting cavity and stacked with the chip; Power terminals arranged on the side wall of the IMS frame and extending out of the IMS frame, Signal terminals arranged on the bottom of the IMS frame and extending out of the IMS frame; and a filler layer arranged at the gaps between the IMS frame and the chip, the copper bar, the power terminals and the signal terminals.
[0006] Preferably, the high-heat-dissipation and high-mechanical-strength flat module structure, wherein one side wall of the copper bar is connected with the inner wall of the IMS frame.
[0007] Preferably, the high-heat-dissipation and high-mechanical-strength flat module structure, wherein the IMS frame comprises an AlSiC stamping frame, an insulating adhesive film and a copper wiring, the insulating adhesive film is arranged on the inner wall of the AlSiC stamping frame, and the copper wiring is arranged on one side wall of the insulating adhesive film away from the stamping frame.
[0008] Preferably, the high-heat-dissipation and high-mechanical-strength flat module structure, wherein the chip is connected with the copper wiring through a solder layer, the copper bar and the surface of the chip, the copper bar and the inner wall of the IMS frame, and the power terminals, the signal terminals and the copper wiring are all adhered and welded through the solder layer.
[0009] The application further provides a preparation method of the high-heat-dissipation and high-mechanical-strength flat module structure, comprising the following steps: Step S1. stamping an AlSiC blank to form an AlSiC stamping frame through electroplating treatment on the outer surface; Step S2. providing a copper wiring and an insulating adhesive film, and sequentially arranging the insulating adhesive film and the copper wiring on the inner wall of the stamping frame and hot-pressing the same; Step S3. performing copper wiring channel film coating and developing etching on the inner wall of the stamping frame, performing residual adhesive treatment in the copper wiring channel after the etching is completed, and finally performing surface OSP treatment to form the insulating adhesive film and the copper wiring on the inner wall of the stamping frame; Step S4. pasting high-temperature lead-free solder pieces on the chip, and then performing formic acid reflow soldering and sintering of the chip to the IMS frame; Step S5. leading out the gate signal line or the Kelvin line of the chip through bonding aluminum wires; Step S6. performing solder pre-preparation on the soldering side of the copper bar, the power terminals and the signal terminals through tin dipping welding process; Step S7. welding the copper bar, the power terminals and the signal terminals to the IMS frame; Step S8. filling a filler in the gaps between the IMS frame and the chip, the copper bar, the power terminals and the signal terminals, and then plastic packaging, demolding after solidification, to obtain the high-heat-dissipation and high-mechanical-strength flat module structure.
[0010] Preferably, the high-heat-dissipation high-mechanical-strength flat plate type module structure preparation method, wherein the temperature of the hot pressing in step S2 is 290-310 DEG C, and the pressure of the hot pressing is 4-5 MPa.
[0011] Preferably, the high-heat-dissipation high-mechanical-strength flat plate type module structure preparation method, wherein the peak temperature of the welding in step S4 is 235-245 DEG C.
[0012] Preferably, the high-heat-dissipation high-mechanical-strength flat plate type module structure preparation method, wherein the material for the tin dipping welding in step S6 is a low-temperature lead-free solder wire, and the welding temperature of step S6 and step S7 is 220-230 DEG C.
[0013] Preferably, the high-heat-dissipation high-mechanical-strength flat plate type module structure preparation method, wherein the mold temperature of the plastic sealing in step S8 is 170-180 DEG C.
[0014] Advantages of the present application: (1) The high-heat-dissipation high-mechanical-strength flat plate type module structure and the preparation method thereof replace the traditional split heat dissipation design with the IMS frame integrated module structure design, can save the DCB and copper substrate welding process, save the bridging welding process between DCBs, and thus reduce the welding and assembly cost.
[0015] (2) The high-heat-dissipation high-mechanical-strength flat plate type module structure and the preparation method thereof, the traditional flat plate type power module heat dissipation path needs to pass through a chip welding layer, a substrate, a solder layer, a bottom plate, a heat-conducting grease and a heat sink, the complex level leads to thermal resistance stacking, the heat conduction efficiency is limited, the solder layer is easy to fail due to thermal stress fatigue, and the thermal resistance rises; the IMS substrate structure can remove the ceramic substrate and the solder heat dissipation level, and shorten the heat dissipation path; meanwhile, the frame integrated module structure design can drag heat to the frame side wall for dissipation through the metal copper row, so that the heat source chip double-sided heat dissipation purpose is realized, the module heat dissipation capacity is further improved, and the module actual output power section is improved.
[0016] (3) The high-heat-dissipation high-mechanical-strength flat plate type module structure and the preparation method thereof, the side frame provides a terminal leading welding area, is expanded from a two-dimensional layout of the traditional flat plate type power module to a three-dimensional layout, increases a chip free layout area, reduces the module size, and effectively improves the system power density; the frame integrated module structure can effectively avoid the thermal stress accumulation caused by the obvious CTE difference between multiple materials, so as to avoid early failure. Meanwhile, the side frame is surrounded by the metal AlSiC, so that the mechanical strength of the module is greatly improved, and the long-term reliability of the module is improved.
[0017] (4) The high-heat-dissipation high-mechanical-strength flat plate type module structure and the preparation method thereof use copper bars to replace traditional aluminum wires for current carrying, which has the heat traction effect and can reduce loop noise, optimize current flow and improve PC reliability. BRIEF DESCRIPTION OF DRAWINGS
[0018] Fig. 1 is a structural schematic diagram of the high-heat-dissipation high-mechanical-strength flat plate type module structure.
[0019] Fig. 2 is a structural schematic diagram of the IMS frame. DETAILED DESCRIPTION
[0020] The application will be further described below in combination with specific embodiments.
[0021] Embodiment 1 As Figs. 1-2 A high-heat-dissipation high-mechanical-strength flat plate type module structure, comprising: An IMS frame 1, which is a frame structure with an open top, and an installation cavity is formed in the IMS frame 1; A chip 3, which is arranged in the installation cavity; A copper bar 5, which is arranged in the installation cavity and is stacked with the chip 3; A power terminal 6, which is arranged on the side wall of the IMS frame 1 and extends out of the IMS frame 1, A signal terminal 7, which is arranged on the bottom of the IMS frame 1 and extends out of the IMS frame 1; and the interspace between the IMS frame 1 and the chip 3, the copper bar 5, the power terminal 6 and the signal terminal 7 is filled with a filler 4.
[0022] One side wall of the copper bar 5 is connected with the inner wall of the IMS frame 1; the IMS frame 1 comprises an AlSiC stamping frame 11, an insulating adhesive film 12 and a copper wiring 13, the inner wall of the AlSiC stamping frame 11 is provided with the insulating adhesive film 12, and the copper wiring 13 is arranged on the side wall away from the AlSiC stamping frame 11 of the insulating adhesive film 12.
[0023] The chip 3 is connected with the copper wiring 13 through a solder layer 2, and the copper bar 5 and the chip 3 surface, the copper bar 5 and the inner wall of the IMS frame 1, and the power terminal 6, the signal terminal 7 and the copper wiring 13 are all adhered and welded through the solder layer 2.
[0024] The IMS frame 1 is composed of three layers of AlSiC stamping frame, insulating adhesive film and copper wiring layer, which plays the roles of support, heat dissipation and circuit layout; Solder layer 2, frame internal chip and copper wiring, copper row and chip surface, copper row and side wall, and model terminal, power terminal and copper wiring are adhered and welded; Chip 3, top surface of chip and copper row are welded by lead-free solder layer, topological design layout is carried out on copper wiring, and current flow and heat transfer are carried out; Filler 4, hard plastic sealing process is used, internal module plays a role in electrical insulation, and water vapor and dust invasion are avoided; Copper row 5, heat on the surface of the chip is drawn by soldering and welding of the chip and the IMS frame (side), and the copper row serves as a power terminal and a bridge between the chip; power terminal 6 carries current by soldering on the copper wiring of the IMS frame (side); signal terminal 7 carries signals by soldering on the copper wiring of the IMS frame (bottom).
[0025] The IMS frame integrated module structure design replaces the traditional split heat dissipation design (such as DCB / AMB substrate + independent heat sink + side frame), which can save the DCB and copper substrate welding process, save the bridging welding process between DCB and DCB, and thus reduce the welding and assembly cost.
[0026] The traditional flat plate power module heat dissipation path needs to pass through the chip welding layer, the substrate, the solder layer, the bottom plate, the thermal grease, and the heat sink. The complex level leads to thermal resistance stacking, heat conduction efficiency is limited, the solder layer is prone to fatigue failure due to thermal stress, and the thermal resistance rises; the IMS substrate structure can remove the ceramic substrate and the solder heat dissipation level, and shorten the heat dissipation path; at the same time, the frame integrated module structure design can draw heat to the frame side wall through the metal copper row, so as to realize the double-sided heat dissipation of the heat source chip, further improve the module heat dissipation capacity, and improve the actual output power segment of the module.
[0027] The side frame provides terminal lead-out welding area, which expands from the two-dimensional layout of the traditional flat plate power module to the three-dimensional layout, increases the free layout area of the chip, reduces the size of the module, and effectively improves the system power density.
[0028] The frame integrated module structure can effectively avoid the thermal stress accumulation caused by the obvious CTE difference between multiple materials, thereby avoiding early failure. At the same time, the side frame is surrounded by metal AlSiC, which can greatly improve the mechanical strength of the module and improve the long-term reliability of the module.
[0029] The copper row is used instead of the traditional aluminum wire bonding to carry current, which can not only draw heat, but also reduce loop inductance, optimize current flow, and improve PC (s) reliability.
[0030] Example 2 As Figs. 1-2A preparation method of a high-heat-dissipation high-mechanical-strength flat plate type module structure, comprising the following steps: Step S1. stamping forming an AlSiC blank, and then performing an outer surface electroplating treatment to form an AlSiC stamping frame 11; Step S2. providing a copper wire and an insulating adhesive film 12, sequentially arranging the insulating adhesive film 12 and the copper wire 13 on the inner wall of the stamping frame 11 and hot-pressing forming, the hot-pressing temperature being 290-310℃, and the hot-pressing pressure being 4-5Mpa; Step S3. performing a copper wire 13 channel coating film, developing and etching on the inner wall of the AlSiC stamping frame 11, performing a residual adhesive treatment in the copper wire 13 channel after the etching is complete, and finally performing a surface OSP treatment, to form the insulating adhesive film 12 and the copper wire 13 on the inner wall of the stamping frame 11; Step S4. pasting high-temperature lead-free solder pieces on the chip 3, and then performing a formic acid reflow soldering to solder the chip 3 to the IMS frame 1, the peak temperature of the soldering being 235-245℃; Step S5. leading out the gate signal line or the Kelvin line of the chip 3 by bonding aluminum wires; Step S6. performing a solder pre-preparation on the soldering side of the copper bar 5, the power terminal 6 and the signal terminal 7 by a flowing tin soldering process, the material being a low-temperature lead-free soldering tin wire, and the soldering temperature being 220-230℃; Step S7. soldering the copper bar 5, the power terminal 6 and the signal terminal 7 to the IMS frame 1, the soldering temperature being 220-230℃; Step S8. filling a filler in the gap between the IMS frame 1 and the chip 3, the copper bar 5, the power terminal 6 and the signal terminal 7, and plastic packaging, the mold temperature being 170-180℃, and demolding after solidification, to obtain the high-heat-dissipation high-mechanical-strength flat plate type module structure.
[0031] Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present application and not to limit it, although the present application has been described in detail with reference to examples, those skilled in the art should understand that the technical solutions of the present application can be modified or replaced equivalently without departing from the spirit and scope of the technical solutions of the present application, and they should be covered in the scope of the claims of the present application.
Claims
1. A flat-panel module structure with high heat dissipation and high mechanical strength, characterized in that, include: IMS frame (1), the IMS frame (1) is a frame structure with an open top, and an installation cavity is formed inside the IMS frame (1); Chip (3), the chip (3) is disposed in the mounting cavity; A copper busbar (5) is disposed in the mounting cavity and stacked with the chip (3); Power terminal (6), the power terminal (6) is disposed on the side wall of the IMS frame (1) and extends outside the IMS frame (1), Signal terminal (7), the signal terminal is disposed at the bottom of the IMS frame (1) and extends to the outside of the IMS frame (1); a filler layer (4) is disposed in the gap between the IMS frame (1) and the chip (3), copper busbar (5), power terminal (6) and signal terminal (7).
2. The high heat dissipation and high mechanical strength flat-plate module structure according to claim 1, characterized in that, The copper busbar (5) is connected to one side wall and the inner wall of the IMS frame (1).
3. The high heat dissipation and high mechanical strength flat-plate module structure according to claim 1, characterized in that, The IMS frame (1) includes an AlSiC stamped frame (11), an insulating film (12), and copper wiring (13). The inner wall of the AlSiC stamped frame (11) is provided with the insulating film (12), and the copper wiring (13) is provided on the side wall of the insulating film (12) away from the stamped frame (11).
4. The high heat dissipation and high mechanical strength flat-plate module structure according to claim 3, characterized in that, The chip (3) is connected to the copper wiring (13) through a solder layer (2). The copper busbar (5) and the surface of the chip (3), the copper busbar (5) and the inner wall of the IMS frame (1), as well as the power terminal (6), the signal terminal (7) and the copper wiring (13) are all bonded and soldered through the solder layer (2).
5. A method for preparing a high-heat-dissipation, high-mechanical-strength flat-plate module structure according to any one of claims 1-4, characterized in that, Includes the following steps: Step S1. The AlSiC blank is stamped and then the outer surface is electroplated to form an AlSiC stamped frame (11). Step S2. Provide copper wiring and insulating film (12), and sequentially place insulating film and copper wiring on the inner wall of the stamping frame (11) and hot press to form; Step S3. Copper wiring channels are coated, developed and etched inside the stamping frame (11). After complete etching, residual adhesive in the copper wiring channels is treated, and finally surface OSP treatment is performed to form an insulating adhesive film (12) and copper wiring (13) on the inner wall of the stamping frame (11). Step S4. Apply a high-temperature lead-free solder pad to the chip (3), and then perform formic acid reflow soldering to sinter the chip (3) into the IMS frame (1); Step S5. Lead out the gate signal line or Calvin line bonding aluminum wire of chip (3); Step S6. The solder sides of the copper busbar (5), power terminal (6), and signal terminal (7) are pre-formed using a soldering process. Step S7. Solder the copper busbar (5), power terminal (6), and signal terminal (7) into the IMS frame (1); Step S8. Fill the gaps between the IMS frame (1) and the chip (3), copper busbar (5), power terminal (6), and signal terminal (7) with filler material and seal them with plastic. After curing, demold to obtain a flat module structure with high heat dissipation and high mechanical strength.
6. The method for preparing the high heat dissipation and high mechanical strength flat module structure according to claim 5, characterized in that, In step S2, the hot pressing temperature is 290-310℃ and the hot pressing pressure is 4-5 MPa.
7. The method for preparing the high heat dissipation and high mechanical strength flat module structure according to claim 5, characterized in that, The peak welding temperature in step S4 is 235-245℃.
8. The method for preparing the high heat dissipation and high mechanical strength flat module structure according to claim 5, characterized in that, In step S6, the material used for soldering is low-temperature lead-free solder wire, and the soldering temperature in both steps S6 and S7 is 220-230℃.
9. The method for preparing the high heat dissipation and high mechanical strength flat module structure according to claim 5, characterized in that, In step S8, the molding temperature for encapsulation is 170-180℃.