Spray disc, process chamber, semiconductor device processing method and storage medium

Abstract

The invention provides a spraying disc, a process chamber, a processing method of a semiconductor device and a computer readable storage medium. The spraying disc comprises a spraying disc body, a first impedance adjusting circuit and a controller. The spraying disc body is divided into a central area and an edge area and comprises a plurality of radio frequency electrodes. At least one first radio frequency electrode is located in the central area. At least one second radio frequency electrode is located in the edge area. The first impedance adjusting circuit is connected with the first radio frequency electrode and comprises a first adjustable capacitor. And the controller is used for reducing the capacitance value of the first adjustable capacitor along with the increase of the process duration of the spraying disc. According to the invention, the adjustable capacitor in the impedance resistor can be adjusted along with the increase of the process duration of the spraying disc, so that the uniformity of the thickness of a film between the central area and the edge area of a wafer after the increase of the process duration can be improved, and the precision and stability of a semiconductor processing process can be improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device processing, and more particularly to a spray plate, a process chamber, a method for processing semiconductor devices, and a computer-readable storage medium. Background Technology

[0002] In high-end manufacturing fields such as semiconductor manufacturing and flat panel displays, plasma-enhanced vapor deposition (PECVD, PEALD) is one of the core processes for thin film deposition. It enhances the deposition reaction through plasma to form thin films on the substrate surface that meet specific performance requirements, directly impacting the overall performance and reliability of the device. However, in actual deposition processes, thin film uniformity remains a key bottleneck restricting process stability. Specifically, during wafer deposition, even if the film thickness initially exhibits some consistency, the film thickness at the wafer edges continuously decreases as the processing time of the spray pad increases. This leads to a significant increase in the difference in film thickness distribution across the entire wafer area, ultimately causing a sharp deterioration in film uniformity and severely affecting the manufacturing accuracy and performance stability of subsequent devices.

[0003] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for an improved spray disk to improve the uniformity of film thickness between the central region and the edge region of the wafer as the process time increases, thereby improving the accuracy and stability of semiconductor processing technology. Summary of the Invention

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] To overcome the aforementioned deficiencies in the prior art, the present invention provides a spray plate, a process chamber, a semiconductor device processing method, and a computer-readable storage medium. By adjusting the adjustable capacitor in the impedance resistor as the process time of the spray plate increases, the uniformity of the thin film thickness between the central and edge regions of the wafer can be improved as the process time increases, thereby enhancing the precision and stability of the semiconductor processing technology.

[0006] Specifically, according to the first aspect of the present invention, the spray tray includes a spray tray body, a first impedance adjustment circuit, and a controller. The spray tray body is divided into a central region and an edge region, and includes a plurality of radio frequency (RF) electrodes. At least one first RF electrode is located in the central region. At least one second RF electrode is located in the edge region. The first impedance adjustment circuit is connected to the first RF electrode and includes a first adjustable capacitor. The controller is used to decrease the capacitance value of the first adjustable capacitor as the process time of the spray tray increases.

[0007] Furthermore, in some embodiments of the present invention, the step of obtaining the process duration of the spray tray includes: determining the number of processes of the spray tray and the unit duration of each process; and multiplying the number of processes by the unit duration to determine the process duration of the spray tray.

[0008] Furthermore, in some embodiments of the present invention, the uniformity of the thin film thickness on the surface of the semiconductor device processed by the spray plate decreases with the increase of the processing time of the spray plate. The spray plate also includes a film thickness detection unit. The controller is configured to: measure the film thickness in the central region and edge region of the semiconductor device surface via the film thickness detection unit, and determine the uniformity of the film thickness accordingly; and compare the uniformity with a preset uniformity threshold, and adjust the capacitance value of the first adjustable capacitor according to the comparison result.

[0009] Furthermore, in some embodiments of the present invention, the step of comparing the uniformity with a preset uniformity threshold and adjusting the capacitance value of the first adjustable capacitor according to the comparison result includes: keeping the capacitance value of the first adjustable capacitor unchanged in response to the uniformity being greater than or equal to the uniformity threshold; and reducing the capacitance value of the first adjustable capacitor in response to the uniformity being less than the uniformity threshold.

[0010] Furthermore, in some embodiments of the present invention, the spray disc further includes a second impedance adjustment circuit connected to the second radio frequency electrode and including a second adjustable capacitor. The controller is also configured to: maintain the capacitance value of the second adjustable capacitor unchanged in response to the uniformity being greater than or equal to the uniformity threshold; and increase the capacitance value of the second adjustable capacitor in response to the uniformity being less than the uniformity threshold.

[0011] Furthermore, in some embodiments of the present invention, the first impedance adjustment circuit and / or the second impedance adjustment circuit each include two branches. The first branch is used to block the high-frequency signal received by the corresponding radio frequency electrode and adjust its low-frequency impedance to the ground terminal. The second branch is used to block the low-frequency signal received by the corresponding radio frequency electrode and adjust its high-frequency impedance to the ground terminal.

[0012] Furthermore, in some embodiments of the present invention, the spray disc further includes an insulating ring disposed between the central region and the edge region to achieve insulation between the central region and the edge region.

[0013] Furthermore, the process chamber provided according to the second aspect of the present invention includes a spray tray, a wafer tray, and an RF power supply as provided in the first aspect of the present invention. The wafer tray carries a wafer to be processed. The RF power supply is connected to a plurality of RF electrodes in the spray tray to form an RF electric field between the spray tray and the wafer tray.

[0014] Furthermore, the method for processing the semiconductor device according to the third aspect of the present invention includes the following steps: measuring a first thin film thickness in the central region of the wafer surface processed in the process chamber as provided in the second aspect of the present invention, and a second thin film thickness in the edge region of the wafer surface; determining the uniformity of the thin film thickness on the wafer surface based on the first thin film thickness and the second thin film thickness. The uniformity decreases with the increase of the process time of the spray disk in the process chamber; and comparing the uniformity with a preset uniformity threshold, and adjusting the capacitance value of a first adjustable capacitor in the spray disk according to the comparison result.

[0015] Furthermore, the computer-readable storage medium provided according to the fourth aspect of the present invention stores computer instructions thereon. When the computer instructions are executed by a controller, a method for fabricating a semiconductor device as provided in the third aspect of the present invention is implemented. Attached Figure Description

[0016] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0017] Figure 1 A schematic diagram showing the variation of film uniformity with process time according to a reference example is shown.

[0018] Figure 2 A schematic diagram of the structure of a spray disc provided according to some embodiments of the present invention is shown.

[0019] Figure 3 A top view schematic diagram of a spray disc provided according to some embodiments of the present invention is shown.

[0020] Figure 4 A schematic diagram of the structure of a first impedance adjustment circuit provided according to some embodiments of the present invention is shown.

[0021] Figure 5 A schematic diagram of a first impedance adjustment circuit provided according to some embodiments of the present invention is shown.

[0022] Figure 6 A Smith chart of a first branch provided according to some embodiments of the present invention is shown.

[0023] Figure 7 A circuit diagram of a first branch provided according to some embodiments of the present invention is shown.

[0024] Figure 8 A Smith chart of a first branch provided according to some embodiments of the present invention is shown.

[0025] Figure 9 A circuit diagram of a first branch provided according to some embodiments of the present invention is shown.

[0026] Figure 10 A graph showing the capacitance reactance as a function of frequency according to some embodiments of the present invention is shown.

[0027] Figure 11 A graph showing the inductive reactance of a pair of components according to some embodiments of the present invention as a function of frequency is shown.

[0028] Figure 12 A schematic diagram of the structure of a spray disc provided according to some embodiments of the present invention is shown.

[0029] Figure 13 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown.

[0030] Figure 14 A schematic diagram illustrating the trend of low-frequency impedance over time in the central region of a wafer, according to some embodiments of the present invention, is shown.

[0031] Figure 15 A schematic diagram illustrating the trend of high-frequency impedance over time in the central region of a wafer, according to some embodiments of the present invention, is shown.

[0032] Figure 16 A schematic diagram of the uniformity of a wafer surface thin film as a function of time, according to some embodiments of the present invention, is shown. Detailed Implementation

[0033] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0034] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0035] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0036] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0037] Please refer to Figure 1 . Figure 1 A schematic diagram showing the variation of film uniformity with process time according to a reference example is shown.

[0038] As mentioned above, thin film uniformity remains a key bottleneck restricting process stability during actual deposition. Specifically, even if the film thickness is relatively uniform in the initial state during wafer deposition, the film thickness in the wafer edge region will continue to decrease as the processing time of the spray pad increases. This leads to a significant increase in the difference in film thickness distribution across the entire wafer area, ultimately causing a sharp deterioration in film uniformity and severely affecting the manufacturing accuracy and performance stability of subsequent devices.

[0039] To overcome the aforementioned deficiencies in the prior art, the present invention provides a spray plate, a process chamber, a semiconductor device processing method, and a computer-readable storage medium. By adjusting the adjustable capacitor in the impedance resistor as the process time of the spray plate increases, the uniformity of the thin film thickness between the central and edge regions of the wafer can be improved as the process time increases, thereby enhancing the precision and stability of the semiconductor processing technology.

[0040] In some non-limiting embodiments, the process chamber provided in the second aspect of the present invention can be implemented based on the semiconductor device processing method provided in the third aspect of the present invention. The spray disk provided in the first aspect of the present invention can be configured in the process chamber provided in the second aspect of the present invention.

[0041] Specifically, the process chamber provided in the second aspect of the present invention includes the spray tray, wafer tray, and radio frequency power supply provided in the first aspect of the present invention. Here, the wafer tray carries the wafer to be processed. The radio frequency power supply is connected to a plurality of radio frequency electrodes in the spray tray to form a radio frequency electric field between the spray tray and the wafer tray.

[0042] Please refer to the details. Figures 2-5 . Figure 2 A schematic diagram of the structure of a spray disc provided according to some embodiments of the present invention is shown. Figure 3 A top view schematic diagram of a spray disc provided according to some embodiments of the present invention is shown. Figure 4 A schematic diagram of the structure of a first impedance adjustment circuit provided according to some embodiments of the present invention is shown. Figure 5 A schematic diagram of a first impedance adjustment circuit provided according to some embodiments of the present invention is shown.

[0043] exist Figure 2 and Figure 3In the illustrated embodiment, the spray tray provided by the first aspect of the present invention includes a spray tray body 11, a first impedance adjustment circuit 12, and a controller. Here, the spray tray body 11 is divided into a central region 111 and an edge region 112, and includes a plurality of radio frequency (RF) electrodes. At least one first RF electrode is located in the central region 111, and at least one second RF electrode is located in the edge region 112. The first impedance adjustment circuit 12 is connected to the first RF electrode and includes a first adjustable capacitor. The controller is used to decrease the capacitance value of the first adjustable capacitor as the process time of the spray tray increases.

[0044] Furthermore, in Figure 4 and Figure 5 In the illustrated embodiment, the first impedance adjustment circuit 12 includes two branches. Here, the first branch is used to block the high-frequency signal HF received by the corresponding radio frequency electrode and adjust its low-frequency impedance to the ground terminal, and the second branch is used to block the low-frequency signal LF received by the corresponding radio frequency electrode and adjust its high-frequency impedance to the ground terminal.

[0045] Please refer to further information. Figures 6-9 . Figure 6 A Smith chart of a first branch provided according to some embodiments of the present invention is shown. Figure 7 A circuit diagram of a first branch provided according to some embodiments of the present invention is shown. Figure 8 A Smith chart of a first branch provided according to some embodiments of the present invention is shown. Figure 9 A circuit diagram of a first branch provided according to some embodiments of the present invention is shown.

[0046] like Figure 6 As shown in the Smith chart of the first branch, the high-frequency point of 13.56MHz is at the point of maximum impedance, which can block high-frequency signals from passing through the first branch. However, the impedance is lower at the low-frequency point of 400kHz, allowing low-frequency signals to pass through smoothly. Furthermore, the low-frequency impedance is adjustable, thus enabling adjustable low-frequency impedance in the first branch.

[0047] like Figure 7 As shown, in the first branch, the inductance L = 2.5uH and the capacitor C1 = 55pF cause the first branch to resonate at a frequency of 13.56MHz, where the impedance is at its maximum. Combined with the grounded capacitor C2 = 2nF, it can block high-frequency signals from passing through. However, the first branch has very low impedance to low-frequency signals of 400kHz, allowing them to pass smoothly to the first adjustable capacitor C3 = Cs for impedance adjustment.

[0048] Similarly, such as Figure 8As shown in the Smith chart of the second branch, the low-frequency point of 400kHz is at the point of maximum impedance, which blocks low-frequency signals from passing through the second branch. However, the impedance is lower at the high-frequency point of 13.56MHz, allowing high-frequency signals to pass through smoothly. Furthermore, the high-frequency impedance is adjustable, thus enabling adjustable high-frequency impedance in the second branch.

[0049] like Figure 9 As shown, in the second branch, the inductance L = 158uH and the capacitor C1 = 1000pF cause the second branch to resonate at a frequency of 400kHz, where its impedance is at its maximum. Combined with the grounded capacitor C2 = 150pF, it can block low-frequency signals from passing through. However, the second branch has very low impedance to high-frequency signals of 13.56MHz, and the impedance can be adjusted smoothly by the first adjustable capacitor C3 = Cs.

[0050] Please refer to the reference. Figure 10 and Figure 11 . Figure 10 A graph showing the capacitance reactance as a function of frequency according to some embodiments of the present invention is shown. Figure 11 A graph showing the inductive reactance of a pair of components according to some embodiments of the present invention as a function of frequency is shown.

[0051] like Figure 10 As shown, the capacitive reactance is inversely proportional to the frequency, that is:

[0052]

[0053] like Figure 11 As shown, the inductive reactance is directly proportional to the frequency, that is:

[0054] X L =2πfL

[0055] Please refer to further information. Figure 12 . Figure 12 A schematic diagram of the structure of a spray disc provided according to some embodiments of the present invention is shown.

[0056] In addition, Figure 12 In the illustrated embodiment, the spray tray provided by the first aspect of the present invention includes a second impedance adjustment circuit 13 connected to a second radio frequency electrode and including a second adjustable capacitor. A controller is configured to decrease the capacitance value of the second adjustable capacitor as the process time of the spray tray increases.

[0057] Similarly, in Figure 12 In the illustrated embodiment, the second impedance adjustment circuit 13 includes two branches. Here, the first branch is used to block the high-frequency signal HF received by the corresponding radio frequency electrode and adjust its low-frequency impedance to the ground terminal, and the second branch is used to block the low-frequency signal LF received by the corresponding radio frequency electrode and adjust its high-frequency impedance to the ground terminal.

[0058] In addition, Figure 2 and Figure 12 In the embodiment shown, the spray disc provided by the first aspect of the present invention further includes an insulating ring 14 disposed between the central region 111 and the edge region 112 to achieve insulation between the central region 111 and the edge region 112.

[0059] Furthermore, in some preferred embodiments, the spray disk provided in the first aspect of the present invention further includes a film thickness detection unit for measuring the film thickness of the central region 111 and the edge region 112 on the surface of the semiconductor device.

[0060] In some non-limiting embodiments, the semiconductor processing apparatus provided in the second aspect of the present invention includes a memory. Here, the memory includes, but is not limited to, the computer-readable storage medium provided in the third aspect, on which computer instructions are stored. The controller is connected to the memory and configured to execute the computer instructions stored in the memory to implement a method for processing a semiconductor device as provided in the third aspect of the present invention.

[0061] The working principle of the above-mentioned process chamber will be described below with reference to some embodiments of semiconductor device fabrication methods. Those skilled in the art will understand that these embodiments of fabrication methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating modes of the process chamber. Similarly, the process chamber is also only one non-limiting implementation provided by the present invention and does not limit the executing entity or execution order of the steps in these semiconductor device fabrication methods.

[0062] Please refer to Figure 13 . Figure 13 A schematic flowchart of a method for fabricating a semiconductor device according to some embodiments of the present invention is shown.

[0063] like Figure 13 As shown, the spray tray provided in the first aspect of the present invention can first calculate the cumulative process time of the spray tray. Specifically, the spray tray can first determine the number of processes of the spray tray and the unit time of each process by a processor. Then, the processor can multiply the number of processes by the unit time to determine the process time of the spray tray.

[0064] Here, the uniformity of the thin film thickness on the surface of the semiconductor device processed by the spray plate decreases with the increase of the spray plate's processing time.

[0065] Subsequently, the processor can measure the first film thickness of the central region 111 of the wafer surface processed in the process chamber and the second film thickness of the edge region 112 of the wafer surface via the film thickness detection unit.

[0066] Please refer to Figure 14 and Figure 15 . Figure 14 A schematic diagram illustrating the trend of low-frequency impedance over time in the central region of a wafer, according to some embodiments of the present invention, is shown. Figure 15 A schematic diagram illustrating the trend of high-frequency impedance over time in the central region of a wafer, according to some embodiments of the present invention, is shown.

[0067] Then, the processor can determine the uniformity of the thin film thickness on the wafer surface (e.g., the ratio of the maximum thin film thickness in the central region to the minimum thin film thickness in the edge region) based on the first and second thin film thicknesses. Here, as... Figure 14 and Figure 15 As shown, after the RF electrode in the central region of the spray plate is grounded, both the low-frequency impedance and the high-frequency impedance of the circuit decrease over time. Therefore, the uniformity of the thin film thickness on the surface of the semiconductor device processed by the spray plate decreases with the increase of the process time of the spray plate. That is, the uniformity of the thin film thickness is positively correlated with the process time of the spray plate, which can characterize the process time of the spray plate.

[0068] Those skilled in the art will understand that the above-described embodiments, which determine the ratio of the maximum film thickness in the central region to the minimum film thickness in the edge region as the uniformity of film thickness, are merely some non-limiting implementations provided by the present invention. They are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0069] Alternatively, in other embodiments, those skilled in the art can also calculate the standard deviation and range of the maximum film thickness in the central region and the minimum film thickness in the edge region to determine the uniformity of the film thickness.

[0070] Then, the processor can compare the uniformity with a preset uniformity threshold and adjust the capacitance value of the first adjustable capacitor in the spray plate according to the comparison result.

[0071] Specifically, in response to a uniformity greater than or equal to a uniformity threshold, the processor can keep the capacitance value of the first adjustable capacitor unchanged.

[0072] Alternatively, in response to a uniformity value being less than a uniformity threshold, the processor may reduce the capacitance value of the first adjustable capacitor.

[0073] Thus, the spray disk provided by the first aspect of the present invention can dynamically adjust the capacitance value of the first adjustable capacitor in the first impedance adjustment circuit during the semiconductor device processing, thereby adjusting the low-frequency impedance and high-frequency impedance after the radio frequency electrode in the central region of the spray disk is grounded, so as to improve the uniformity of the central region and the edge region of the wafer surface thin film.

[0074] Furthermore, in some alternative embodiments, the processor can also adjust the capacitance value of the second adjustable capacitor in the spray disk. Then, in response to a uniformity greater than or equal to a uniformity threshold, the processor can maintain the capacitance value of the second adjustable capacitor unchanged.

[0075] Alternatively, in response to a uniformity value being less than a uniformity threshold, the processor can increase the capacitance value of the second adjustable capacitor.

[0076] Thus, the spray disk provided by the first aspect of the present invention can dynamically adjust the capacitance value of the second adjustable capacitor in the second impedance adjustment circuit during the semiconductor device processing, thereby adjusting the low-frequency impedance and high-frequency impedance after the RF electrode in the central region of the spray disk is grounded, so as to improve the uniformity of the central region and the edge region of the wafer surface thin film.

[0077] Please refer to Figure 16 . Figure 16 A schematic diagram of the uniformity of a wafer surface thin film as a function of time, according to some embodiments of the present invention, is shown.

[0078] like Figure 16 As shown, after adjustment by the semiconductor device processing method provided by the third aspect of the present invention, the thickness uniformity decreases and then rises back to a stable point, thereby maintaining the thickness uniformity of the wafer surface film after long-term processing of the spray plate and improving the process quality of the semiconductor device processing technology.

[0079] In summary, the spray plate, process chamber, semiconductor device processing method, and computer-readable storage medium provided by the present invention can all improve the uniformity of film thickness between the central and edge regions of the wafer as the process time increases by adjusting the adjustable capacitor in the impedance resistor as the process time of the spray plate increases, thereby improving the accuracy and stability of the semiconductor processing technology.

[0080] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0081] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0082] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0083] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A spray disc, characterized in that, include: The spray disc body is divided into a central region and an edge region, and includes multiple radio frequency electrodes, wherein at least one first radio frequency electrode is located in the central region and at least one second radio frequency electrode is located in the edge region; A first impedance adjustment circuit, connected to the first radio frequency electrode, and including a first adjustable capacitor; and The controller is used to reduce the capacitance value of the first adjustable capacitor as the process time of the spray plate increases.

2. The spray disc as described in claim 1, characterized in that, The steps for obtaining the process time of the spray disc include: Determine the number of processes for the spray plate and the unit duration of each process; and The process duration of the spray plate is determined by multiplying the number of process steps by the unit duration.

3. The spray disc as described in claim 1, characterized in that, The uniformity of the thin film thickness on the surface of the semiconductor device processed by the spray plate decreases with the increase of the processing time of the spray plate. The spray plate also includes a film thickness detection unit, and the controller is configured to: measure the film thickness of the central region and the edge region of the semiconductor device surface via the film thickness detection unit, and determine the uniformity of the film thickness accordingly; The uniformity is compared with a preset uniformity threshold, and the capacitance value of the first adjustable capacitor is adjusted according to the comparison result.

4. The spray disc as described in claim 3, characterized in that, The step of comparing the uniformity with a preset uniformity threshold and adjusting the capacitance value of the first adjustable capacitor based on the comparison result includes: In response to the uniformity being greater than or equal to the uniformity threshold, the capacitance value of the first adjustable capacitor remains unchanged; and In response to the uniformity being less than the uniformity threshold, the capacitance value of the first adjustable capacitor is reduced.

5. The spray disc as described in claim 3, characterized in that, Also includes: A second impedance adjustment circuit, connected to the second radio frequency electrode, includes a second adjustable capacitor, wherein the controller is further configured to: maintain the capacitance value of the second adjustable capacitor unchanged in response to the uniformity being greater than or equal to the uniformity threshold; and increase the capacitance value of the second adjustable capacitor in response to the uniformity being less than the uniformity threshold.

6. The spray disc as described in claim 5, characterized in that, The first impedance adjustment circuit and / or the second impedance adjustment circuit each include two branches, wherein the first branch is used to block the high-frequency signal received by the corresponding radio frequency electrode and adjust its low-frequency impedance to the ground terminal, and the second branch is used to block the low-frequency signal received by the corresponding radio frequency electrode and adjust its high-frequency impedance to the ground terminal.

7. The spray disc as described in claim 1, characterized in that, Also includes: An insulating ring is disposed between the central region and the edge region to achieve insulation between the central region and the edge region.

8. A process chamber, characterized in that, include: The spray disc as described in any one of claims 1 to 7; A wafer tray, which holds the wafers to be processed; as well as A radio frequency power supply is connected to multiple radio frequency electrodes in the spray tray to form a radio frequency electric field between the spray tray and the wafer tray.

9. A method for fabricating a semiconductor device, characterized in that, Includes the following steps: The thickness of a first thin film in the central region of the wafer surface processed in the process chamber as described in claim 8, and the thickness of a second thin film in the edge region of the wafer surface are measured. The uniformity of the thin film thickness on the wafer surface is determined based on the first thin film thickness and the second thin film thickness, wherein the uniformity decreases with the increase of the spray disk process time in the process chamber. as well as The uniformity is compared with a preset uniformity threshold, and the capacitance value of the first adjustable capacitor in the spray plate is adjusted according to the comparison result.

10. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the controller, the semiconductor device fabrication method as described in claim 9 is implemented.

Images