Measurement system and method

Abstract

The invention discloses a measuring system and method, and the system comprises a transient thermal resistance tester which is used for providing an induction current; the steady-state measuring unit is respectively coupled with the transient thermal resistance tester and a plurality of temperature sensors of the detected device, and is used for sequentially applying induction current to the plurality of temperature sensors when the detected device is in a thermal balance condition, so that the plurality of temperature sensors respectively measure a plurality of target positions in the detected device; reading analog measurement voltage signals measured by the plurality of temperature sensors and performing analog-to-digital conversion to obtain a plurality of corresponding digital measurement voltage signals; and the data processing unit is coupled with the steady-state measurement unit and is used for converting the plurality of digital measurement voltage signals into a plurality of corresponding digital measurement temperatures by adopting a temperature sensitivity coefficient corresponding to the detected device, and obtaining a steady-state temperature distribution diagram of the detected device. According to the technical scheme, the cost of steady-state temperature measurement of the detected device can be saved.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to the field of simulation verification, and in particular to a measurement system and method. BACKGROUND

[0002] With the development of miniaturization and high integration of electronic products, the power consumption of electronic products gradually rises, and the heat flux density significantly increases. The heat dissipation problem has become a key problem limiting the development of nanometer scale electronic devices. Taking a chip as an example, the heat flux density of local hot spots increases, and local high temperature and high heat flux density can cause increased leakage current and accelerated diffusion of dopants, thereby significantly shortening the service life of the chip. Therefore, in order to effectively solve the heat dissipation problem of the chip, the position and temperature of the hot spot of the chip during operation are accurately determined, and then the corresponding material adjustment and thermal design optimization are performed.

[0003] However, the existing steady-state temperature measurement scheme of the detected device has the problem of high cost. SUMMARY

[0004] The problem solved by embodiments of the present application is to provide a measurement system and method that can save the steady-state temperature measurement of the detected device.

[0005] To solve the above problem, embodiments of the present application provide a measurement system, comprising:

[0006] A transient thermal resistance tester is configured to provide a sensing current.

[0007] A steady-state measurement unit is coupled to the transient thermal resistance tester and a plurality of temperature sensors of a detected device, respectively, and is configured to apply the sensing current to the plurality of temperature sensors in turn under the condition that the detected device is in thermal equilibrium, so that the plurality of temperature sensors measure a plurality of target positions in the detected device, respectively; read analog measurement voltage signals measured by the plurality of temperature sensors and perform analog-to-digital conversion to obtain a plurality of digital measurement voltage signals.

[0008] A data processing unit is coupled to the steady-state measurement unit and is configured to convert the plurality of digital measurement voltage signals into a plurality of digital measurement temperatures corresponding to a temperature coefficient of the detected device, and obtain a steady-state temperature distribution map of the detected device.

[0009] Correspondingly, embodiments of the present application also provide a measurement method, comprising:

[0010] The transient thermal resistance tester is configured to provide a sensing current.

[0011] The steady-state measurement unit applies the induced current to the multiple temperature sensors in turn under the condition that the detected device is in thermal equilibrium, so that the multiple temperature sensors measure multiple target positions in the detected device respectively; analog measurement voltage signals measured by the multiple temperature sensors are read and converted into digital signals to obtain multiple digital measurement voltage signals;

[0012] The data processing unit converts the multiple digital measurement voltage signals into multiple digital measurement temperatures corresponding to the detected device by using temperature-sensitive coefficients of the detected device to obtain a steady-state temperature distribution map of the detected device.

[0013] Compared with the prior art, the technical scheme of the embodiment of the present application has the following advantages:

[0014] The measurement system provided by the embodiment of the present application comprises: a transient thermal resistance tester for providing an induced current; a steady-state measurement unit coupled with the transient thermal resistance tester and multiple temperature sensors of a detected device respectively, for applying the induced current to the multiple temperature sensors in turn under the condition that the detected device is in thermal equilibrium, so that the multiple temperature sensors measure multiple target positions in the detected device respectively; analog measurement voltage signals measured by the multiple temperature sensors are read and converted into digital signals to obtain multiple digital measurement voltage signals; and a data processing unit coupled with the steady-state measurement unit, for converting the multiple digital measurement voltage signals into multiple digital measurement temperatures corresponding to the detected device by using temperature-sensitive coefficients of the detected device to obtain a steady-state temperature distribution map of the detected device.

[0015] The measurement system provided by the embodiment of the present application comprises: a transient thermal resistance tester for providing an induced current; a steady-state measurement unit coupled with the transient thermal resistance tester and multiple temperature sensors of a detected device respectively, for applying the induced current to the multiple temperature sensors in turn under the condition that the detected device is in thermal equilibrium, so that the multiple temperature sensors measure multiple target positions in the detected device respectively; analog measurement voltage signals measured by the multiple temperature sensors are read and converted into digital signals to obtain multiple digital measurement voltage signals; and a data processing unit coupled with the steady-state measurement unit, for converting the multiple digital measurement voltage signals into multiple digital measurement temperatures corresponding to the detected device by using temperature-sensitive coefficients of the detected device to obtain a steady-state temperature distribution map of the detected device. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1is a structural schematic diagram of an embodiment of the measuring system provided by the technical scheme of the present application;

[0017] Figure 2 is a structural schematic diagram of a TTV;

[0018] Figure 3 is a structural schematic diagram of an embodiment of the steady-state measuring unit in the technical scheme of the present application;

[0019] Figure 4 is a steady-state temperature distribution diagram of a detected device;

[0020] Figure 5 is a schematic diagram of a semiconductor packaging structure and a corresponding thermal resistance model;

[0021] Figure 6 is a schematic diagram of a structure function of a detected device;

[0022] Figure 7 is a flow schematic diagram of an embodiment of the measuring method provided by the technical scheme of the present application. DETAILED DESCRIPTION

[0023] As known from the background art, how to save the cost of steady-state temperature measurement of a detected device has become a problem to be solved by those skilled in the art.

[0024] In order to solve the above technical problem, the measuring system provided by the embodiment of the present application comprises: a transient thermal resistance tester for providing an induced current; a steady-state measuring unit coupled with the transient thermal resistance tester and a plurality of temperature sensors of a detected device respectively, for sequentially applying the induced current to the plurality of temperature sensors under the condition that the detected device is in thermal equilibrium, so that the plurality of temperature sensors measure a plurality of target positions in the detected device respectively; reading analog measurement voltage signals measured by the plurality of temperature sensors and performing analog-digital conversion to obtain a plurality of digital measurement voltage signals; and a data processing unit coupled with the steady-state measuring unit, for converting the plurality of digital measurement voltage signals into a plurality of digital measurement temperatures corresponding to the temperature-sensitive coefficients of the detected device, to obtain a steady-state temperature distribution diagram of the detected device.

[0025] The measurement system provided by the embodiment of the present application is used for providing a sensing current by a transient thermal resistance tester, and coupling a steady-state measurement unit with the transient thermal resistance tester and a plurality of temperature sensors of a detected device respectively, so as to sequentially apply the sensing current to the plurality of temperature sensors under the condition that the detected device is in thermal equilibrium, so that the plurality of temperature sensors measure a plurality of target positions in the detected device respectively, read analog measurement voltage signals measured by the plurality of temperature sensors and perform analog-digital conversion to obtain a plurality of digital measurement voltage signals, and convert the plurality of digital measurement voltage signals into a plurality of digital measurement temperatures corresponding to the detected device by using a temperature coefficient corresponding to the detected device by the data processing unit, so as to obtain a steady-state temperature distribution map of the detected device, and the steady-state measurement of the detected device can be realized without using a specially customized customized test board (Customized test board), which is beneficial to reducing the cost of the steady-state measurement.

[0026] In order to make the above objectives, characteristics and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the drawings.

[0027] Figure 1 The structure schematic diagram of an embodiment of the measurement system provided by the present application is shown. Referring to Figure 1 The measurement system can include a transient thermal resistance tester 100, a steady-state measurement unit 200 and a data processing unit 300. The transient thermal resistance tester 100, the steady-state measurement unit 200 and the data processing unit 300 are coupled in sequence, and the data processing unit 300 is further coupled with the transient thermal resistance tester 100.

[0028] The measurement system is used for realizing the steady-state temperature measurement of the detected device and obtaining a steady-state temperature distribution map of the detected device.

[0029] The detected device is a semiconductor device to be measured in a steady state. In an exemplary embodiment, the detected device is a thermal test vehicle (Thermal Test Vehicle, TTV). The TTV is a key tool that cannot be obtained in the electronic package thermal design, verification and reliability evaluation, simulates the real structure and heat generation characteristics of the measured chip, is an experimental carrier for replacing the real measured chip to test the thermal performance, but does not have a real circuit structure itself. In the embodiment of the present application, the steady-state temperature measurement of the TTV of the measured chip is performed to obtain a steady-state temperature distribution map of the measured chip, so as to evaluate the thermal performance and thermal management scheme of the integrated circuit package structure integrated with the measured chip.

[0030] The transient thermal resistance tester 100 is configured to provide a sensing current. Specifically, the sensing current is provided by a programmable current source in the transient thermal resistance tester 100.

[0031] The sensing current, also referred to as a measurement current or a detection current, is used as a working current of the temperature sensors in the device under test, respectively, to implement the measurement of the target positions in the device under test.

[0032] The sensing current should not be too large or too small. If the sensing current is too large, the self-heating effect of the temperature sensors in the device under test during the measurement process generates Joule heat that easily interferes with the measurement of the temperature sensors, affecting the measurement accuracy of the temperature sensors. If the sensing current is too small, the voltage drop signal generated across the temperature sensors is small, so that the corresponding voltage drop signal cannot be accurately collected, which also affects the measurement accuracy of the temperature sensors. Therefore, in the embodiments of the present application, the sensing current is 0.1 mA to 10 mA.

[0033] In an exemplary embodiment, the transient thermal resistance tester is a T3STER thermal resistance tester.

[0034] The device under test is in a thermal equilibrium state, which means that the heat power input into the device under test is the same as the total heat dissipation power of the device under test. When in the thermal equilibrium state, the temperature of each point in the device under test remains constant. Therefore, making the device under test in the thermal equilibrium state provides a basis for accurate and reliable thermal performance evaluation of the device under test.

[0035] In actual applications, whether the temperature of the key point of the device under test remains stable for a long time is used as a basis for judging whether the device under test reaches the thermal equilibrium state. Specifically, the temperature of the key point of the device under test remains stable for a long time means that the temperature change rate of the key point of the device under test is lower than a preset change rate threshold.

[0036] In an exemplary embodiment, the measurement system further comprises a heating current providing module (not shown) configured to apply a heating current to the device under test, so that the device under test reaches the thermal equilibrium state.

[0037] Reference is made to Figure 2 (a), which shows the structure of a TTV. As shown in Figure 2 The TTV shown in (a) comprises a plurality of heating regions 410 and heating elements (not labeled) distributed on the heating regions 410, which are used to heat the heating regions 410. The heating elements can be resistance heaters including polysilicon resistors or metal resistors.

[0038] Please refer to Figure 2 (b), wherein a plurality of heating connectors 420 are also provided in the TTV, one end of each of the plurality of heating connectors 420 is coupled with a heating element in the TTV, and the other end of each of the plurality of heating connectors 420 is coupled with the heating current providing module, thereby achieving mutual coupling between the heating elements in the TTV and the heating current providing module, so that the heating elements in the heating region of the device under test generate heat to simulate a real chip, and the device under test reaches the thermal equilibrium state.

[0039] In an exemplary embodiment, the heating current providing module is integrated in the transient thermal resistance tester 100. Specifically, the heating current providing module is a programmable current source in the transient thermal resistance tester 100.

[0040] In other embodiments, the heating current providing module can also be implemented in other structures with the same function, which can be selected by those skilled in the art according to actual needs, and is not limited herein.

[0041] The steady-state measurement unit 200 is used to apply the sensing current to the plurality of temperature sensors in turn when the device under test is in thermal equilibrium, so that the plurality of temperature sensors measure a plurality of target positions in the device under test respectively; read the analog measurement voltage signals measured by the plurality of temperature sensors and perform analog-to-digital conversion to obtain a plurality of digital measurement voltage signals.

[0042] In an exemplary embodiment, the plurality of temperature sensors are integrated in the device under test, so that a high-density temperature sensor network formed by the plurality of temperature sensors realizes spatial resolution of the internal temperature field of the device under test.

[0043] Please continue to refer to Figure 3 In an exemplary embodiment, the steady-state measurement unit 200 includes a first control module 210, a multiplexing module 220, a second control module 230, and a sampling conversion module 240.

[0044] The first control module 210 is used to generate a selection control signal SEL[0:(M-1)] to control the input nodes of the multiplexing module 220 to be selectively coupled with one of the plurality of output nodes of the multiplexing module 220.

[0045] Specifically, the selection control signal SEL[0:(M-1)] includes M-bit level signals, and each bit of the M-bit level signals can be switched between a preset first logic state and a second logic state, so that the value of the selection control signal SEL[0:(M-1)] can be changed in a certain range, so that the number of values of the selection control signal SEL[0:(M-1)] changed in a certain range can be one-to-one corresponding to the number of output nodes of the multiplexing module 220. Thus, according to the value of the selection control signal SEL[0:(M-1)], the input node of the multiplexing module 220 can be selectively coupled with the corresponding output node of the plurality of output nodes of the multiplexing module 220.

[0046] Exemplarily, in the initial state, the M-bit level signals in the selection control signal SEL[0:(M-1)] are all in the first logic state, and the M-bit level signals in the selection control signal SEL[0:(M-1)] can be dynamically converted from the first logic state to the second logic state in order from low bit to high bit, thereby realizing the value of the selection control signal SEL[0:(M-1)] changed in a certain range. Wherein, the first logic state is "0", and the second logic state is "1".

[0047] Correspondingly, the length M of the selection control signal SEL[0:(M-1)] is an integer greater than or equal to 2, and the specific value of the length M of the selection control signal SEL[0:(M-1)] can make the number of values of the selection control signal SEL[0:(M-1)] changed in a certain range equal to the number of output nodes of the multiplexing module 220, thereby realizing one-to-one correspondence between the value of the selection control signal SEL[0:(M-1)] changed in a certain range and the plurality of output nodes of the multiplexing module 220.

[0048] Taking the number of output nodes of the multiplexing module 220 as 8 for example, correspondingly, the value of the length M of the selection control signal SEL[0:(M-1)] is 3, that is, the value range of the selection control signal SEL[0:(M-1)] is 000 to 111, that is, 000, 001, 010, 011, 100, 101, 110, 111, thereby one-to-one corresponding to the 8 output nodes of the multiplexing module 220.

[0049] The above describes the value range of the selection control signal SEL[0:(M-1)] with the output nodes of the multiplexing module 220 as an example. It can be understood that the number of output nodes of the multiplexing module 220 can also be a value greater than 8, and accordingly, the value of the length M of the selection control signal SEL[0:(M-1)] can be adaptively increased, so that the number of values generated by the selection control signal SEL[0:(M-1)] changing within a certain range is equal to the number of output nodes of the multiplexing module 220, thereby meeting the steady-state measurement requirement.

[0050] The first control module 210 can be implemented by a controller chip, a processor core, etc., which runs executable program code to realize the function of dynamically generating the selection control signal SEL[0:(M-1)] changing within a certain value. In an exemplary embodiment, the first control module 210 is integrated in a microcontroller chip.

[0051] The multiplexing module 220 includes an input node, a control node, and a plurality of output nodes corresponding to the plurality of temperature sensors in the detected device. The input node of the multiplexing module 220 is coupled to the transient resistance tester 100, the control node of the multiplexing module 220 is coupled to the first control module 210, and the plurality of output nodes of the multiplexing module 220 are respectively coupled to the plurality of temperature sensors in the detected device.

[0052] Please refer to Figure 2 (b), for example, the TTV also has a plurality of sensing connectors 430, one end of each of the plurality of sensing connectors 430 is coupled to the plurality of temperature sensors integrated in the TTV, and the other end of each of the plurality of sensing connectors 430 is coupled to the plurality of output nodes of the multiplexing module 220, thereby realizing the mutual coupling between the plurality of temperature sensors provided in the detected device and the plurality of output nodes of the multiplexing module 220.

[0053] Under the condition that the detected device is in a thermal equilibrium state, the multiplexing module 220 can selectively couple the uniquely provided input node of the multiplexing module 220 to one of the plurality of output nodes of the multiplexing module 220 under the control of the selection control signal SEL[0:(M-1)], forming a plurality of current transmission channels, so that the sensing current received by the input node of the multiplexing module 220 is selectively output to the plurality of temperature sensors integrated in the detected device through one of the plurality of output nodes of the multiplexing module 220, thereby enabling the plurality of temperature sensors in the detected device to sequentially measure a plurality of target positions in the detected device.

[0054] For example, when the number of temperature sensors in the detected device is 8, the value of the selection control signal SEL[0:(M-1)] output by the first control module 210 can be dynamically changed from 000 to 111 in turn, so that the transient resistance tester 100 provides the induced current to pass through the multiple current transmission channels in the multiplexing module 220 in turn and be transmitted to the 8 temperature sensors integrated in the detected device, so that the 8 temperature sensors integrated in the detected device measure the 8 target positions of the detected device in turn.

[0055] By controlling the input nodes of the multiplexing module 220 to selectively couple with one of the multiple output nodes through the selection control signal SEL[0:(M-1)], multiple current transmission channels are formed, so that the induced current provided by the transient thermal resistance tester 100 can be applied to the multiple temperature sensors in turn, which can reduce the measurement resources required for steady-state temperature measurement and reduce the measurement cost.

[0056] Moreover, by controlling the input nodes of the multiplexing module 220 to selectively couple with one of the multiple output nodes through the selection control signal SEL[0:(M-1)], multiple current transmission channels are formed, and the induced current provided by the transient thermal resistance tester 100 is applied to the multiple temperature sensors in turn through the multiple current transmission channels, which helps to reduce the wiring difficulty between the measurement system in the embodiment of the present application and the detected device, and thus is beneficial to improve the efficiency of steady-state measurement and save cost.

[0057] The second control module 230 is configured to generate a sampling control signal.

[0058] Specifically, the sampling control signal is a periodic pulse signal. According to actual needs, the sampling control signal can be a rising edge effective periodic pulse signal or a falling edge effective periodic pulse signal. The rising edge effective periodic pulse signal is used to control the sampling conversion module 240 to sample the analog measurement voltage signal collected by the multiple temperature sensors when each rising edge of the sampling control signal arrives, and the falling edge effective periodic pulse signal is used to control the sampling conversion module 240 to sample the analog measurement voltage signal collected by the multiple temperature sensors when each falling edge of the sampling control signal arrives.

[0059] The second control module 230 can be implemented by a microcontroller chip, a processor core, etc., which runs executable program code to generate a periodically changing pulse signal. In an exemplary embodiment, the second control module 230 is integrated in the same microcontroller chip as the first control module 210 to improve the integration of the measurement system in the present embodiment.

[0060] The sampling conversion module 240 is configured to sample and convert the plurality of analog measurement voltage signals to a plurality of digital measurement voltage signals at corresponding sampling rates based on the sampling control signal.

[0061] In the condition that the detected device is in a thermal equilibrium state, the induced current is applied to the plurality of temperature sensors in the detected device, so that corresponding forward voltage drops are generated on both sides of the plurality of temperature sensors in the detected device. Accordingly, the sampling conversion module 240 reads the forward voltage drops generated on both sides of the plurality of temperature sensors in the detected device as the plurality of analog measurement voltage signals.

[0062] The sampling rate of the sampling conversion module 240 for the plurality of analog measurement voltage signals should not be too high or too low. If the sampling rate of the sampling conversion module 240 for the plurality of analog measurement voltage signals is too high, a high sampling rate sampling conversion module 240 or multiple sampling conversion modules 240 need to be used to collect the plurality of analog measurement voltage signals, resulting in an increase in sampling cost. If the sampling rate of the sampling conversion module 240 for the plurality of analog measurement voltage signals is too low, the sampling time will be too long, which is not conducive to improving the sampling efficiency and thus not conducive to improving the steady-state measurement efficiency. Therefore, in the present embodiment, the sampling rate of the sampling conversion module 240 for the plurality of analog measurement voltage signals is higher than 1 KSa / s.

[0063] The sampling accuracy of the sampling conversion module 240 can be set according to the sampling requirements of the plurality of analog measurement voltage signals. For example, the resolution of the sampling conversion module 240 is greater than or equal to 12 bits.

[0064] In an exemplary embodiment, the sampling conversion module 240 is an analog-to-digital converter (ADC). In other words, the plurality of analog measurement voltage signals are sampled and converted by an analog-to-digital converter to obtain a plurality of digital measurement voltage signals. The analog-to-digital converter can convert continuous analog signals into discrete digital signals for digital analysis and processing.

[0065] Exemplarily, the sampling conversion module 240 is a noise-shaping successive approximation register analog-to-digital converter (SAR ADC). The noise-shaping successive approximation register analog-to-digital converter is one of successive approximation register analog-to-digital converters, which combines oversampling and noise shaping with successive approximation register analog-to-digital converters, and can improve the accuracy of successive approximation register analog-to-digital converters under the condition of guaranteeing the speed and power consumption requirements, thereby helping to improve the accuracy of steady-state measurement.

[0066] It should be noted that, under the condition of maintaining the stable and continuous supply of the heating current, the detected device can be kept in the thermal equilibrium state for a long time, and thus, when performing the steady-state temperature measurement on the detected device, a high sampling rate is not required as when performing the transient thermal resistance measurement on the detected device, and thus, by using only the set analog-to-digital converter, the serial sampling processing of the plurality of analog measurement voltage signals can be realized, which is correspondingly conducive to reducing the sampling cost, thereby being conducive to reducing the cost of the steady-state measurement on the detected device.

[0067] The data processing unit 300 is configured to convert the plurality of digital measurement voltage signals into a plurality of corresponding digital measurement temperatures by using the temperature-sensitive coefficient corresponding to the detected device, and obtain a steady-state temperature distribution map of the detected device.

[0068] The temperature-sensitive coefficient corresponding to the detected device, also known as a K factor, is the amount of change in the electrical parameter of the temperature sensor caused by a unit temperature change, and is a core index for describing the sensitivity of the electrical parameter of the integrated temperature temperature sensor in the detected device to temperature change. Correspondingly, by using the temperature-sensitive coefficient corresponding to the detected device, the plurality of digital measurement voltage signals can be converted into a plurality of corresponding digital measurement temperatures, and the steady-state temperature distribution map of the detected device can be obtained.

[0069] In combination with reference Figure 4 A steady-state temperature distribution map of a detected device is shown. As can be seen, the steady-state temperature distribution map of the detected device intuitively reflects the temperature spatial distribution of the surface or interior of the detected device under the condition of thermal equilibrium. By means of the steady-state temperature distribution map of the detected device, the spatial analysis of the temperature field inside the detected device can be realized, which is a key tool for evaluating the heat dissipation design of semiconductor packages, and the thermal uniformity of hot spots.

[0070] In an example embodiment, the data processing unit 300 can be implemented by a processor. Specifically, the processor can be a central processing unit (CPU), an accelerator (e.g., a graphics accelerator or a digital signal processor), a graphics processing unit (GPU), a field programmable gate array, or any other processor having a computer instruction execution function. In addition, the processor can also be a Reduced Instruction Set Computing-five (RISC-V) microprocessor, a Complex Instruction Set Computer (CISC) microprocessor, a Very Long Instruction Word (VLIW) microprocessor, or any other processing device implementing a combination of instruction sets.

[0071] Correspondingly, the measurement system further comprises a calibration unit (not shown) configured to obtain a temperature coefficient corresponding to the device under test.

[0072] Specifically, the device under test is placed in a constant temperature environment (such as an oil tank or a temperature control table), and the junction voltage value of the device under test is collected at a plurality of different temperature conditions in the target temperature range. Correspondingly, the calibration unit is configured to linearly fit the junction voltage values measured under different temperature conditions, and the slope of the obtained fitting straight line is the temperature coefficient corresponding to the device under test.

[0073] In an example embodiment, the measurement system is further configured to implement transient thermal resistance measurement of the device under test.

[0074] Specifically, the transient thermal resistance tester 100 is further configured to gradually cool the device under test from the thermal equilibrium state to the equilibrium state again by stopping the provision of the heating current; during the gradual cooling of the device under test from the thermal equilibrium state to the equilibrium state again, the transient response curve of the temperature of the device under test changing with time is obtained by providing the sensing current to at least one of the temperature sensors; and the data processing unit 300 is further configured to obtain the structure function of the device under test according to the transient response curve.

[0075] In the embodiments of the present application, the electrical method is used to measure the transient thermal resistance of the device under test, which can realize non-destructive and non-contact transient thermal resistance measurement of the device under test, and is the best method for transient thermal resistance measurement.

[0076] Generally, a semiconductor package device has one main heat dissipation interface, so it can be considered as having one-dimensional heat transfer path. Figure 5 (a) shows a structural schematic diagram of a semiconductor package structure, Figure 5 (b) shows Figure 5 the corresponding thermal resistance model of the semiconductor package structure in (a). Please refer to Figure 5 , the heat flow is conducted from the chip active area 11 to the chip 10, the adhesive layer 20, the substrate 30, and the package 40 in turn.

[0077] For one-dimensional heat transfer structure, the heat flow equation can be expressed as:

[0078]

[0079] where T represents temperature, t represents time, x represents structure length, r(x) represents unit length thermal resistance, and c(x) represents unit length heat capacity.

[0080] Using the thermal resistance p(x) of the heat source to a specific point instead of the abscissa x, the above formula (1) can be expressed as:

[0081]

[0082] where Substituting formula (2) can be obtained:

[0083]

[0084] where C th represents heat capacity, and R th represents thermal resistance.

[0085] The heat capacity of a small thickness dx(Δx) of semiconductor device in any X direction can be expressed as dC th = cAdx, and its thermal resistance can be expressed as:

[0086]

[0087] where c represents bulk heat capacity, λ represents thermal conductivity, and A represents heat flow cross-sectional area.

[0088] Thus:

[0089]

[0090] The above formula (5) represents the differential structure function, which is proportional to the square of the bulk heat capacity, thermal conductivity, and heat flow cross-sectional area of the material, and represents the information of the change of the material and cross-sectional area on the heat flow path related to the physical structure of the device.

[0091] The structure function of the detected device is determined according to the transient response curve, that is, the structure function of the detected device can be transformed from the transient response curve. Specifically, as shown in Figure 6 The relationship curve between the heat capacity C th and the thermal resistance R th obtained by taking the heat capacity C th of the detected device as the ordinate and the thermal resistance R th as the abscissa is called the integral structure function curve. The abscissa of the structure function corresponds to the thermal resistance R ∑ characterizes the cumulative thermal resistance value from the heat source (chip) to the corresponding structure such as the bonding layer, substrate, shell, etc. on the heat flow transfer path, and therefore, the structure function can reflect the thermal resistance and heat capacity characteristics of each layer of structure in the device heat flow conduction path.

[0092] For the content of the transient thermal resistance tester 100 and the data processing unit 300 to realize the transient thermal resistance measurement of the detected device, refer to the existing scheme, and will not be repeated here.

[0093] The embodiment of the present application creatively applies the transient thermal resistance tester to the steady-state measurement and transient thermal resistance measurement of the detected device, that is, the transient thermal resistance tester has the ability of steady-state measurement and transient thermal resistance measurement, so that the steady-state measurement and transient thermal resistance measurement of the detected device can be completed at the same time by using the same measurement system. Compared with the method of using two independent systems to respectively perform steady-state measurement and transient thermal resistance measurement on the detected device, the measurement efficiency is improved and the measurement cost is saved.

[0094] Correspondingly, the embodiment of the present application also provides a measurement method.

[0095] Figure 7 The flowchart of an embodiment of the measurement method provided by the technical scheme of the present application is shown. In combination with the description of the transient thermal resistance tester and the data processing unit in the foregoing, the measurement method can include the following steps. Figure 7 The measurement method can include the following steps.

[0096] Step S710: providing an induced current by the transient thermal resistance tester;

[0097] Step S720: sequentially applying the induced current to the plurality of temperature sensors under the condition that the detected device is in thermal equilibrium by the steady-state measurement unit, so that the plurality of temperature sensors respectively measure a plurality of target positions in the detected device; reading the analog measurement voltage signals measured by the plurality of temperature sensors and performing analog-digital conversion to obtain a plurality of digital measurement voltage signals;

[0098] Step S730: converting the plurality of digital measurement voltage signals into corresponding plurality of digital measurement temperatures by the data processing unit using the temperature coefficient corresponding to the detected device, to obtain a steady-state temperature distribution map of the detected device.

[0099] Please continue to refer to Figure 7 Step S710 is performed, and the transient thermal resistance tester provides a sensing current.

[0100] The detected device is a semiconductor device to be measured in a steady state. In an exemplary embodiment, the detected device is a thermal test vehicle (TTV). The TTV is a key tool that cannot be obtained in the thermal design, verification and reliability evaluation of electronic packages, simulates the real structure and heat generation characteristics of the chip under test, and is an experimental carrier for testing the thermal performance of the chip under test instead of the real chip under test, but does not have a real circuit structure itself. In the embodiment of the present application, the steady-state temperature of the TTV of the chip under test is measured to obtain the steady-state temperature distribution map of the chip under test, so as to evaluate the thermal performance and thermal management scheme of the integrated circuit package structure integrated with the chip under test.

[0101] The transient thermal resistance tester 100 provides a sensing current, which is sequentially applied to the plurality of temperature sensors by the steady-state measurement unit under the condition that the detected device is in thermal equilibrium, so that the plurality of temperature sensors measure a plurality of target positions in the detected device respectively, and the analog measurement voltage signals measured by the plurality of temperature sensors are read and converted into corresponding plurality of digital measurement voltage signals.

[0102] Specifically, the step of providing a sensing current by the transient thermal resistance tester includes: providing the sensing current by using a programmable current source in the transient thermal resistance tester 100.

[0103] The sensing current, also known as measurement current or detection current, is used as the working current of the plurality of temperature sensors in the detected device to realize the measurement of the plurality of target positions in the detected device.

[0104] The sensing current should not be too large or too small. If the sensing current is too large, the self-heating effect of the plurality of temperature sensors in the detected device during the measurement process will generate Joule heat, which will interfere with the measurement of the temperature sensors and affect the measurement accuracy of the temperature sensors; if the sensing current is too small, the voltage drop signal generated across the plurality of temperature sensors will be small, so that the corresponding voltage drop signal cannot be collected with high precision, thereby also affecting the measurement accuracy of the temperature sensors. Therefore, in the embodiment of the present application, the sensing current is 0.1mA-10mA.

[0105] In an example embodiment, the transient thermal resistance tester is a T3STER thermal resistance tester.

[0106] The detected device is in a thermal equilibrium state, which means that the heat power input to the detected device is the same as the total heat dissipation power of the detected device. When in the thermal equilibrium state, the temperature of each point in the detected device remains constant. Therefore, making the detected device in the thermal equilibrium state provides a basis for accurate and reliable thermal performance evaluation of the detected device.

[0107] In practical applications, whether the temperature of the key point of the detected device remains stable for a long time is used as a basis for judging whether the detected device reaches the thermal equilibrium state. Specifically, the temperature of the key point of the detected device remains stable for a long time, which means that the temperature change rate of the key point of the detected device is lower than a preset change rate threshold.

[0108] In an example embodiment, the measurement method further comprises: applying a heating current to the detected device by a heating current providing module (not shown) so that the detected device reaches the thermal equilibrium state.

[0109] Reference is made to Figure 2 (a), wherein a structure of a TTV is shown. As Figure 2 The TTV shown in (a) comprises a plurality of heating regions 410 and heating elements (not labeled) distributed on the heating regions 410 for heating the heating regions 410. The heating elements can be resistance heaters including polysilicon resistors or metal resistors, etc.

[0110] Reference is made to Figure 2 (b), wherein a plurality of heating connectors 420 are further provided in the TTV, and one end of each of the plurality of heating connectors 420 is coupled with a heating element in the TTV, and the other end of each of the plurality of heating connectors 420 is coupled with the heating current providing module, so as to realize mutual coupling between the plurality of heating elements in the TTV and the heating current providing module, and thus the heating elements in the heating regions of the detected device generate heat by the heating current provided by the heating current providing module to simulate a real chip, so that the detected device reaches the thermal equilibrium state.

[0111] In an exemplary embodiment, the heating current providing module is integrated in the transient thermal resistance tester. Specifically, the heating current providing module is a programmable current source in the transient thermal resistance tester 100. Accordingly, the step of applying a heating current to the device under test by the heating current providing module so that the device under test reaches a thermal equilibrium state comprises: applying a heating current to the device under test by the programmable current source in the transient thermal resistance tester 100 so that the device under test reaches a thermal equilibrium state.

[0112] In other embodiments, the heating current providing module can also be implemented by other structures with the same function, and accordingly, the heating current can also be applied to the device under test by other structures with the same function so that the device under test reaches a thermal equilibrium state. Those skilled in the art can select according to actual needs, which are not limited herein.

[0113] Please continue to refer to Figure 7 , execute step S720, apply the sensing current to the plurality of temperature sensors in turn by the steady-state measurement unit under the condition that the device under test is in thermal equilibrium, so that the plurality of temperature sensors measure a plurality of target positions in the device under test respectively; read the analog measurement voltage signals measured by the plurality of temperature sensors and perform analog-to-digital conversion to obtain a plurality of digital measurement voltage signals.

[0114] Apply the sensing current to the plurality of temperature sensors in turn by the steady-state measurement unit under the condition that the device under test is in thermal equilibrium, so that the plurality of temperature sensors measure a plurality of target positions in the device under test respectively, and read the analog measurement voltage signals measured by the plurality of temperature sensors and perform analog-to-digital conversion to obtain a plurality of digital measurement voltage signals for subsequent.

[0115] In an exemplary embodiment, the plurality of temperature sensors are integrated in the device under test, so that a high-density temperature sensor network formed by the plurality of temperature sensors realizes spatial resolution of the internal temperature field of the device under test.

[0116] Please continue to refer to Figure 3 In an exemplary embodiment, the steady-state measurement unit 200 includes a first control module 210, a multiplexing module 220, a second control module 230, and a sampling conversion module 240.

[0117] Accordingly, the steady-state measurement unit 200 applies the induced current to the plurality of temperature sensors in turn under the condition that the detected device is in thermal equilibrium, so that the plurality of temperature sensors measure a plurality of target positions in the detected device respectively; reading the analog measurement voltage signals measured by the plurality of temperature sensors and performing analog-to-digital conversion to obtain a plurality of digital measurement voltage signals, including: generating a selection control signal by the first control module 210; under the condition that the detected device is in thermal equilibrium, according to the received selection control signal, the multiplexing module 220 applies the received induced current to the plurality of temperature sensors in turn through the plurality of output nodes, so that the plurality of temperature sensors measure a plurality of target positions in the detected device respectively; generating a sampling control signal by the second control module 230; based on the sampling control signal, the sampling conversion module 240 samples and performs analog-to-digital conversion on the plurality of analog measurement voltage signals at a corresponding sampling rate to obtain a plurality of digital measurement voltage signals.

[0118] The first control module 210 is used to generate a selection control signal SEL[0:(M-1)] to control the input node of the multiplexing module 220 to be selectively coupled to one of the plurality of output nodes of the multiplexing module 220.

[0119] Specifically, the selection control signal SEL[0:(M-1)] includes M-bit level signals, and each bit of the M-bit level signals can be switched between a preset first logic state and a second logic state, so that the value of the selection control signal SEL[0:(M-1)] can vary within a certain range, and the number of values of the selection control signal SEL[0:(M-1)] that varies within a certain range can correspond to the plurality of output nodes of the multiplexing module 220 one-to-one. Thus, according to the value of the selection control signal SEL[0:(M-1)], the input node of the multiplexing module 220 is selectively coupled to the corresponding output node of the plurality of output nodes of the multiplexing module 220.

[0120] For example, in the initial state, the M-bit level signals in the selection control signal SEL[0:(M-1)] are all in the first logic state, and the M-bit level signals in the selection control signal SEL[0:(M-1)] can be dynamically converted from the first logic state to the second logic state in order from low bit to high bit, thereby realizing the value of the selection control signal SEL[0:(M-1)] varying within a certain range. Wherein, the first logic state is "0", and the second logic state is "1".

[0121] Correspondingly, the length M of the selection control signal SEL[0:(M-1)] is an integer greater than or equal to 2, and the specific value of the length M of the selection control signal SEL[0:(M-1)] can be such that the number of values of the selection control signal SEL[0:(M-1)] varying within a certain range is equal to the number of output nodes of the multiplexing module 220, so as to realize one-to-one correspondence between the values of the selection control signal SEL[0:(M-1)] varying within a certain range and the output nodes of the multiplexing module 220.

[0122] Taking the number of output nodes of the multiplexing module 220 as 8 for example, correspondingly, the value of the length M of the selection control signal SEL[0:(M-1)] is 3, that is, the value range of the selection control signal SEL[0:(M-1)] is 000 to 111, that is, 000, 001, 010, 011, 100, 101, 110, 111, so as to correspond to the 8 output nodes of the multiplexing module 220 one by one.

[0123] The above takes the number of output nodes of the multiplexing module 220 as 8 for example, and describes the value variation range of the selection control signal SEL[0:(M-1)]. It can be understood that the number of output nodes of the multiplexing module 220 can also be greater than 8, correspondingly, the value of the length M of the selection control signal SEL[0:(M-1)] can be adaptively increased, so that the number of values generated by the selection control signal SEL[0:(M-1)] varying within a certain range is equal to the output nodes of the multiplexing module 220, thereby meeting the steady-state measurement requirement.

[0124] The first control module 210 can be implemented by a controller chip, a processor core, etc., which runs executable program code to realize the function of dynamically generating the selection control signal SEL[0:(M-1)] varying within a certain value. In an exemplary embodiment, the first control module 210 is integrated in a microcontroller chip.

[0125] The multiplexing module 220 includes an input node, a control node, and a plurality of output nodes corresponding to the plurality of temperature sensors in the detected device. The input node of the multiplexing module 220 is coupled to the transient resistance tester 100, the control node of the multiplexing module 220 is coupled to the first control module 210, and the plurality of output nodes of the multiplexing module 220 correspond to and are respectively coupled to the plurality of temperature sensors in the detected device 200.

[0126] Please refer to Figure 2(b), and the plurality of sensing connectors 430 are respectively coupled to a plurality of temperature sensors integrated in the device under test, and the other ends of the plurality of sensing connectors 430 are respectively coupled to a plurality of output nodes of the multiplexing module 220, so as to realize the mutual coupling between the plurality of temperature sensors arranged in the device under test and the plurality of output nodes of the multiplexing module 220.

[0127] Under the condition that the device under test is in a thermal equilibrium state, the only input node of the multiplexing module 220 is selectively coupled to one of the plurality of output nodes of the multiplexing module 220 under the control of the selection control signals SEL[0:(M-1)], so as to form a plurality of current transmission channels, so that the induced current received by the input node of the multiplexing module 220 is selectively output to the plurality of temperature sensors integrated in the device under test through one of the plurality of output nodes of the multiplexing module 220, so as to enable the plurality of temperature sensors in the device under test to measure the plurality of target positions in the device under test in turn.

[0128] Taking the number of temperature sensors in the device under test as an example, the values of the selection control signals SEL[0:(M-1)] output by the first control module 210 can be dynamically changed from 000 to 111 in turn, so that the induced current provided by the transient resistance tester 100 is transmitted to the eight temperature sensors integrated in the device under test through the plurality of current transmission channels in the multiplexing module 220, so that the eight temperature sensors integrated in the device under test measure the eight target positions of the device under test in turn.

[0129] By controlling the input node of the multiplexing module 220 to be selectively coupled to one of the plurality of output nodes through the selection control signals SEL[0:(M-1)], a plurality of current transmission channels are formed, so that the induced current provided by the transient thermal resistance tester 100 can be applied to the plurality of temperature sensors in turn, which can reduce the measurement resources required for steady-state temperature measurement and reduce the measurement cost.

[0130] Moreover, by controlling the input node of the multiplexing module 220 to be selectively coupled to one of the plurality of output nodes through the selection control signals SEL[0:(M-1)], a plurality of current transmission channels are formed, and the induced current provided by the transient thermal resistance tester 100 is applied to the plurality of temperature sensors in turn through the plurality of current transmission channels, which helps to reduce the wiring difficulty between the measurement system in the embodiment of the present application and the device under test, so as to improve the efficiency of steady-state measurement and save cost.

[0131] The second control module 230 is configured to generate a sampling control signal to control the sampling conversion module 240 to sample and convert the plurality of analog measurement voltage signals into a plurality of digital measurement voltage signals at corresponding sampling rates.

[0132] Specifically, the sampling control signal is a periodic pulse signal. According to actual requirements, the sampling control signal can be a rising edge active periodic pulse signal or a falling edge active periodic pulse signal. The rising edge active periodic pulse signal is used to control the sampling conversion module 240 to sample the analog measurement voltage signals collected by the plurality of temperature sensors when each rising edge of the sampling control signal arrives, and the falling edge active periodic pulse signal is used to control the sampling conversion module 240 to sample the analog measurement voltage signals collected by the plurality of temperature sensors when each falling edge of the sampling control signal arrives.

[0133] The second control module 230 can be implemented by a microcontroller chip, a processor core, etc., which runs executable program codes to generate a periodically changing pulse signal. In an exemplary embodiment, the second control module 230 is integrated in the same microcontroller chip as the first control module 210 to improve the integration of the measurement system in the embodiment of the present application.

[0134] The sampling conversion module 240 samples and converts the plurality of analog measurement voltage signals into a plurality of digital measurement voltage signals at corresponding sampling rates based on the sampling control signal.

[0135] Under the condition that the detected device is in a thermal equilibrium state, the induced current is applied to the plurality of temperature sensors in the detected device, so that corresponding forward voltage drops are generated on both sides of the plurality of temperature sensors in the detected device. Correspondingly, the sampling conversion module 240 reads the forward voltage drops generated on both sides of the plurality of temperature sensors in the detected device as the plurality of analog measurement voltage signals.

[0136] The sampling rate of the sampling conversion module 240 for the plurality of analog measurement voltage signals should not be too high or too low. If the sampling rate of the sampling conversion module 240 for the plurality of analog measurement voltage signals is too high, a high sampling rate sampling conversion module 240 needs to be used, or a plurality of sampling conversion modules 240 need to be used to achieve the collection of the plurality of analog measurement voltage signals, resulting in an increase in sampling cost. If the sampling rate of the sampling conversion module 240 for the plurality of analog measurement voltage signals is too low, the sampling time will be too long, which is not conducive to improving the sampling efficiency, and thus not conducive to improving the steady-state measurement efficiency. Therefore, in an embodiment of the present application, the sampling rate of the sampling conversion module 240 for the plurality of analog measurement voltage signals is higher than 1KSa / s.

[0137] The sampling accuracy of the sampling conversion module 240 can be set according to the sampling requirements of the plurality of analog measurement voltage signals. For example, the resolution of the sampling conversion module 240 is greater than or equal to 12 bits.

[0138] In an exemplary embodiment, the sampling conversion module 240 is an analog-to-digital converter (ADC). In other words, the plurality of analog measurement voltage signals are sampled and converted by an analog-to-digital converter to obtain a plurality of digital measurement voltage signals. The analog-to-digital converter can convert continuous analog signal acquisition into discrete digital signal for digital analysis and processing.

[0139] For example, the sampling conversion module 240 is a noise shaping successive approximation register analog-to-digital converter (SAR ADC). The noise shaping successive approximation register analog-to-digital converter is a type of successive approximation register analog-to-digital converter that combines oversampling and noise shaping with successive approximation register analog-to-digital converters. Under the condition of ensuring speed and power consumption requirements, the accuracy of the successive approximation register analog-to-digital converter can be improved, thereby helping to improve the accuracy of steady-state measurement.

[0140] It should be noted that under the condition of maintaining the stable and continuous supply of the heating current, the detected device can be kept in the thermal equilibrium state for a long time, and thus when the detected device is measured for steady-state temperature, a higher sampling rate is not required as when the detected device is measured for transient thermal resistance, and thus a uniquely set analog-to-digital converter can be used to achieve serial sampling processing of the plurality of analog measurement voltage signals, which is conducive to reducing the sampling cost, and thus conducive to reducing the cost of steady-state measurement of the detected device.

[0141] Please continue to refer to Figure 7, executing step S730, converting the plurality of digital measurement voltage signals into a plurality of corresponding digital measurement temperatures by the data processing unit using the temperature sensitivity coefficient corresponding to the detected device to obtain the steady-state temperature distribution map of the detected device.

[0142] The temperature sensitivity coefficient corresponding to the detected device, also known as K factor, is the amount of change in the electrical parameter of the temperature sensor caused by a unit temperature change, which is a core index for describing the sensitivity of the electrical parameter of the integrated temperature sensor in the detected device to temperature change. Accordingly, the plurality of digital measurement voltage signals can be converted into a plurality of corresponding digital measurement temperatures by using the temperature sensitivity coefficient corresponding to the detected device to obtain the steady-state temperature distribution map of the detected device.

[0143] In combination with reference Figure 4 A steady-state temperature distribution map of a detected device is shown. As can be seen, the steady-state temperature distribution map of the detected device intuitively reflects the temperature spatial distribution of the surface or interior of the detected device under thermal equilibrium conditions. By the steady-state temperature distribution map of the detected device, spatial analysis of the internal temperature field of the detected device can be achieved, which is a key tool for evaluating the heat dissipation design of semiconductor packages, heat spot positioning and thermal uniformity.

[0144] In an exemplary embodiment, the data processing unit 300 can be implemented by a processor. Specifically, the processor can be a central processing unit (CPU), an accelerator (e.g., a graphics accelerator or a digital signal processor), a graphics processing unit (GPU), a field programmable gate array, or any other processor with computer instruction execution function. In addition, the processor can also be a reduced instruction set computing-five (RISC-V) microprocessor, a complex instruction set computer (CISC) microprocessor, a very long instruction word (VLIW) microprocessor, or any other processing device implementing a combination of instruction sets.

[0145] Accordingly, the measurement method further comprises: obtaining the temperature sensitivity coefficient corresponding to the detected device by a calibration unit (not shown).

[0146] Specifically, the detected device is placed in a constant temperature environment (such as an oil tank or a temperature control table), and the junction voltage value of the detected device is collected under a plurality of different temperature conditions in a target temperature range, respectively. Correspondingly, the step of obtaining the temperature coefficient corresponding to the detected device by the calibration unit comprises: linear fitting the measured junction voltage values under different temperature conditions by the calibration unit, and the slope of the obtained fitting straight line is the temperature coefficient corresponding to the detected device.

[0147] In an exemplary embodiment, the measurement method is also used to implement transient thermal resistance measurement of the detected device.

[0148] Specifically, the measurement method further comprises:

[0149] Step S740: gradually cooling the detected device from the thermal equilibrium state to the equilibrium state again by stopping providing the heating current by the transient thermal resistance tester; in the process of gradually cooling the detected device from the thermal equilibrium state to the equilibrium state again, obtaining a transient response curve of the temperature of the detected device changing with time by providing an induced current to at least one of the temperature sensors;

[0150] Step S750: obtaining a structure function of the detected device according to the transient response curve by the data processing unit.

[0151] Thermal resistance refers to the resistance that a heat flow encounters when flowing through a heat conductor. For a semiconductor device, part of the power applied to the chip for work is converted into heat, causing the semiconductor device to rise in temperature, and the heat on the chip is transferred outward through the packaging material. The resistance encountered in the process of heat transfer through the packaging material is thermal resistance. Thermal resistance is a suitable parameter for characterizing the degradation of the interface material of the semiconductor device package. For power devices such as power transistors, MOS tubes, and drive modules, work temperature rise and thermal resistance are important parameters that affect their service life and reliability.

[0152] In the embodiments of the present application, the electrical method is used to measure the transient thermal resistance of the detected device, which can realize non-destructive and non-contact transient thermal resistance measurement of the detected device, and is the best method for transient thermal resistance measurement.

[0153] Generally, a semiconductor package device has one main heat dissipation interface, so it can be approximately considered to have a one-dimensional heat transfer path. Figure 5 (a) shows a structural schematic diagram of a semiconductor package structure, Figure 5 (b) shows Figure 5 the thermal resistance model corresponding to the semiconductor package structure in (a). Please refer to Figure 5The heat flow is conducted from the active region 10 of the chip downward through the chip 11, the adhesive layer 12, the substrate 13, and the package 14.

[0154] For a one-dimensional heat transfer structure, the heat flow equation can be expressed as:

[0155]

[0156] where T represents temperature, t represents time, x represents structure length, r(x) represents unit length thermal resistance, and c(x) represents unit length heat capacity.

[0157] The above formula (1) can be expressed as:

[0158]

[0159] where is substituted into formula (2) to obtain:

[0160]

[0161] where C th represents heat capacity, and R th represents thermal resistance.

[0162] The heat capacity of a semiconductor device of an arbitrarily discrete minimum thickness dx (Δx) in the X direction can be expressed as dC th = cAdx, and its thermal resistance can be expressed as:

[0163]

[0164] where c represents bulk heat capacity, λ represents thermal conductivity, and A represents heat flow cross-sectional area.

[0165] Thus, there is:

[0166]

[0167] The above formula (5) represents a differential structure function, which is proportional to the square of the bulk heat capacity, the thermal conductivity, and the heat flow cross-sectional area of the material, and represents information about the change of the material and the cross-sectional area on the heat flow path and is related to the physical structure of the device.

[0168] According to the transient response curve, the structure function of the detected device is determined, that is, the structure function of the detected device can be transformed from the transient response curve. Specifically, as shown in Figure 6 , the heat capacity C th and the thermal resistance R th of the detected device are obtained as the vertical and horizontal coordinates, respectively, and the heat capacity C th and the thermal resistance Rth The relationship curve between the two is called the integral structure function curve. The horizontal coordinate of the structure function corresponds to the thermal resistance R ∑ The structure function is used to represent the cumulative thermal resistance value from the heat source (chip) to the corresponding structure such as the adhesive layer, substrate, and tube shell on the heat flow transfer path. Therefore, the structure function can reflect the thermal resistance and heat capacity characteristics of each layer of structure in the device heat flow conduction path.

[0169] For the content of the transient thermal resistance tester 100 and the data processing unit 300 to realize the transient thermal resistance measurement of the detected device, refer to the existing scheme, and will not be repeated here.

[0170] The embodiments of the present application creatively apply the transient thermal resistance tester to the steady-state measurement and transient thermal resistance measurement of the detected device, that is, make the transient thermal resistance tester have the ability of steady-state measurement and transient thermal resistance measurement, so that the steady-state measurement and transient thermal resistance measurement of the detected device can be completed at the same time by using the same measurement system. Compared with the method of using two independent systems to respectively perform the steady-state measurement and transient thermal resistance measurement on the detected device, the method is advantageous in improving the measurement efficiency and saving the measurement cost.

[0171] The above description of disclosed embodiments enables a person skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to these embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

[0172] Although the present application is disclosed as above, the present application is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, and therefore the protection scope of the present application should be limited by the scope defined in the claims.

Claims

1. A measurement system, characterized in that, include: Transient thermal resistance tester, used to provide induced current; A steady-state measurement unit is coupled to the transient thermal resistance tester and multiple temperature sensors of the device under test, respectively. It is used to apply the induced current to the multiple temperature sensors sequentially when the device under test is in thermal equilibrium, so that the multiple temperature sensors measure multiple target positions in the device under test; read the analog measurement voltage signals obtained by the multiple temperature sensors and perform analog-to-digital conversion to obtain the corresponding multiple digital measurement voltage signals; The data processing unit, coupled to the steady-state measurement unit, is used to convert the multiple digital measurement voltage signals into multiple corresponding digital measurement temperatures using the temperature sensitivity coefficient corresponding to the device under test, and to obtain the steady-state temperature distribution map of the device under test.

2. The measurement system as described in claim 1, characterized in that, The steady-state measurement unit includes: The first control module is used to generate selection control signals; The multiplexing module includes an input node coupled to the transient thermal resistance tester, a control node coupled to the first control module, and multiple output nodes that are configured and coupled to the multiple temperature sensors one by one. Under the condition that the device under test is in thermal equilibrium, according to the selection control signal received by the control node, the induced current received by the input node is sequentially applied to the multiple temperature sensors through the multiple output nodes, so that the multiple temperature sensors measure multiple target positions in the device under test respectively. The second control module is used to generate sampling control signals; The sampling conversion module is coupled to the plurality of temperature sensors and the second control module respectively, and is used to sample the plurality of analog measurement voltage signals at a corresponding sampling rate based on the sampling control signal and perform analog-to-digital conversion to obtain the corresponding plurality of digital measurement voltage signals.

3. The measurement system as described in claim 1, characterized in that, Also includes: A heating current supply module is used to apply a heating current to the device under test so that the device under test reaches the thermal equilibrium state.

4. The measurement system as described in claim 3, characterized in that, The heating current supply module is integrated into the transient thermal resistance tester.

5. The measurement system as described in claim 4, characterized in that, The transient thermal resistance tester includes the T3STER thermal resistance tester.

6. The measurement system as described in claim 2, characterized in that, The length of the selection control signal is related to the number of the plurality of temperature sensors.

7. The measurement system as described in claim 2, characterized in that, The sampling rate of the sampling conversion module is greater than 1 kSa / second.

8. The measurement system as described in claim 2, characterized in that, The sampling conversion module has a resolution greater than or equal to 12 bits.

9. The measurement system as described in claim 2, characterized in that, The sampling conversion module is an analog-to-digital converter.

10. The measurement system as described in claim 2, characterized in that, The first control module and the second control submodule are integrated into the microcontroller chip.

11. The measurement system as claimed in claim 1, characterized in that, Also includes: The calibration unit is used to obtain the temperature sensitivity coefficient corresponding to the device under test.

12. The measurement system as claimed in claim 1, characterized in that, The transient thermal resistance tester is also used to obtain the transient response curve of the temperature of the tested device over time by providing an induced current to at least one of the temperature sensors during the process of gradually cooling the tested device from the thermal equilibrium state until it reaches the equilibrium state again. The data processing unit is also coupled to the transient thermal resistance tester and is used to obtain the structure function of the device under test based on the transient response curve.

13. The measurement system as described in claim 12, characterized in that, The transient thermal resistance tester is also used to gradually cool the device under test from the thermal equilibrium state until it reaches equilibrium again by stopping the supply of heating current.

14. A measurement method, characterized in that, include: Induced current is provided by a transient thermal resistance tester; By means of a steady-state measurement unit, under the condition that the device under test is in thermal equilibrium, the induced current is sequentially applied to multiple temperature sensors, so that the multiple temperature sensors measure multiple target positions in the device under test respectively; the analog measurement voltage signals obtained by the multiple temperature sensors are read and converted from analog to digital to obtain the corresponding multiple digital measurement voltage signals; The data processing unit uses the temperature sensitivity coefficient corresponding to the device under test to convert the multiple digital measurement voltage signals into multiple corresponding digital measurement temperatures, thereby obtaining the steady-state temperature distribution map of the device under test.

15. The measurement method as described in claim 14, characterized in that, The steady-state measurement unit sequentially applies the induced current to the plurality of temperature sensors under the condition that the device under test is in thermal equilibrium, so that the plurality of temperature sensors measure the plurality of target positions in the device under test respectively; reads the analog measurement voltage signals obtained by the plurality of temperature sensors and performs analog-to-digital conversion to obtain the corresponding plurality of digital measurement voltage signals; uses the temperature sensitivity coefficient corresponding to the device under test to convert the plurality of digital measurement voltage signals into the corresponding plurality of digital measurement temperatures, and obtains the steady-state temperature distribution map of the device under test, including: The first control module generates the selection control signal; By using a multiplexing module, under the condition that the device under test is in thermal equilibrium, the received induced current is sequentially applied to the multiple temperature sensors through the multiple output nodes according to the received selection control signal, so that the multiple temperature sensors measure multiple target positions in the device under test respectively. The sampling control signal is generated by the second control module; The sampling conversion module samples the multiple analog measurement voltage signals based on the sampling control signal at a corresponding sampling rate and performs analog-to-digital conversion to obtain the corresponding multiple digital measurement voltage signals.

16. The measurement method as described in claim 14, characterized in that, Also includes: A heating current is applied to the device under test by a heating current supply module so that the device under test reaches a thermal equilibrium state.

17. The measurement method as described in claim 16, characterized in that, The heating current supply module is integrated into the transient thermal resistance tester.

18. The measurement method as described in claim 17, characterized in that, The transient thermal resistance tester includes the T3STER thermal resistance tester.

19. The measurement method as described in claim 15, characterized in that, The length of the selection control signal is related to the number of the plurality of temperature sensors.

20. The measurement method as described in claim 15, characterized in that, The sampling rate of the sampling conversion module is greater than 1 kSa / second.

21. The measurement method as described in claim 15, characterized in that, The sampling conversion module has a resolution greater than or equal to 12 bits.

22. The measurement method as described in claim 15, characterized in that, The sampling conversion module is an analog-to-digital converter.

23. The measurement method as described in claim 15, characterized in that, The first control module and the second control submodule are integrated into the microcontroller chip.

24. The measurement method as described in claim 14, characterized in that, Also includes: The temperature sensitivity coefficient of the device under test is obtained by means of a calibration unit.

25. The measurement method as described in claim 14, characterized in that, Also includes: By using the transient thermal resistance tester to gradually cool the device under test from the thermal equilibrium state until it reaches the equilibrium state again, the transient response curve of the temperature of the device under test as a function of time is obtained by providing an induced current to at least one of the temperature sensors. The data processing unit obtains the structure function of the device under test based on the transient response curve.

26. The measurement method as described in claim 25, characterized in that, Also includes: By stopping the supply of heating current, the transient thermal resistance tester allows the device under test to gradually cool down from the thermal equilibrium state until it reaches equilibrium again.

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