Efficient heat dissipation device for high-temperature working condition

Abstract

The invention discloses an efficient heat dissipation device for a high-temperature working condition, the efficient heat dissipation device performs heat dissipation treatment on a silicon carbide semiconductor treated under the high-temperature working condition based on air cooling and heat exchange, and the efficient heat dissipation device comprises a first-stage heat dissipation mechanism, a transfer mechanism, a second-stage heat dissipation mechanism and a belt discharge line, wherein the first-stage heat dissipation mechanism comprises a belt feeding line and an air cooling assembly; the transfer mechanism is used for cross-equipment transfer of silicon carbide semiconductors and comprises a pedestal, a first servo sliding table, a stand column, a second servo sliding table, a third servo sliding table, a supporting arm, an electric cylinder, a transfer mechanical arm and a containing tray. And the second-stage heat dissipation mechanism is used for heat exchange and heat dissipation control of the silicon carbide semiconductor. Through cooperative arrangement of the first-stage heat dissipation mechanism, the transfer mechanism and the second-stage heat dissipation mechanism, efficient and uniform heat dissipation treatment on the silicon carbide semiconductor treated under the high-temperature working condition is achieved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing, in particular to a high-efficiency heat dissipation device for high-temperature working conditions. BACKGROUND

[0002] In the field of silicon carbide semiconductor manufacturing and related processing, high-temperature working condition processing is a common and critical process link, such as high-temperature annealing, heat treatment, and high-temperature oxidation processes. These high-temperature treatments can significantly improve the crystal structure, electrical properties, and surface characteristics of silicon carbide semiconductors, thereby improving their overall quality and performance to meet the strict requirements of different electronic devices for material properties.

[0003] However, silicon carbide semiconductors after high-temperature working condition processing face serious heat dissipation problems. Due to the high thermal conductivity and other characteristics of silicon carbide semiconductors, if they cannot be cooled in time and effectively after high-temperature processing, a large thermal stress will be generated inside. This thermal stress not only may cause physical damage such as deformation and cracking of silicon carbide semiconductors, seriously affecting their appearance size precision and structural integrity, but also will have irreversible negative effects on their electrical properties, reducing the reliability and stability of the devices, and further affecting the performance and life of the entire electronic product.

[0004] Currently, the heat dissipation method for silicon carbide semiconductors after high-temperature working condition processing is relatively single, mainly relying on traditional air cooling heat dissipation. Although traditional air cooling heat dissipation can dissipate heat to some extent, it has many limitations. On the one hand, the air cooling heat dissipation efficiency is relatively low, and it is difficult to rapidly reduce the high temperature of silicon carbide semiconductors to a safe range in a short time, which cannot meet the demand of large-scale and high-efficiency production. On the other hand, traditional air cooling heat dissipation lacks precise control of the heat dissipation process, and cannot dynamically adjust according to the actual temperature state of silicon carbide semiconductors, resulting in uneven heat dissipation effect, some areas may be over-cooled, and some areas may be under-cooled, further affecting the quality of silicon carbide semiconductors.

[0005] To solve this problem, the existing technology proposes the following solutions:

[0006] 1) Chinese Patent Publication No. CN116424906A discloses a cooling device for semiconductor production. In this patent application, it includes a cooling cover and a semiconductor device body. The cooling cover is provided with a conveying assembly, and the semiconductor device body is placed on the conveying assembly. A top mounting groove is opened on the top side of the cooling cover, and a top ventilation hole is opened on the bottom inner wall of the top mounting groove. In this cooling device for semiconductor production, the semiconductor device body needs to be annealed and cooled after being heated at high temperature. The placement block is provided with a central heat dissipation hole and two side heat dissipation holes, which can contact heat dissipation of the placed semiconductor device body. Then, the conveyor belt rotates, driving the placed semiconductor device body to be transported and cooled. During the transport process, the infrared sensor will send a command to the blower, and the blower will rotate and run, generating airflow towards the semiconductor device body below, and dissipating heat from the upper surface of the semiconductor device body.

[0007] 2) Chinese Patent Publication No. CN119509222A discloses a water-fluoride heat exchanger and heat exchange method for semiconductor production. This patent application includes a body with a water tank at the top. The water tank, coolant extraction pipe, and coolant delivery pipe form a coolant delivery circuit. The coolant delivery pipe, heat exchange pipe, coolant outlet pipe, and coolant inlet pipe form a cooling circulation circuit. A room temperature water inlet pipe, water chamber, and room temperature water outlet pipe form a room temperature water circuit. A PLC for controlling a PID electric proportional valve is fixedly installed on the inner wall of the side control chamber. The COM port of the touch screen is connected to the communication port of the PLC. This invention utilizes room temperature water to perform a heat exchange with the fluorinated liquid before the fluorinated liquid flows through the production equipment for efficient cooling. The PLC executes a temperature signal required for normal operation and controls the opening angle of the PID electric proportional valve to control the inflow rate of room temperature water, precisely achieving heat exchange between water and fluorinated liquid, ensuring that the operating temperature of the production equipment is maintained at the optimal state.

[0008] The aforementioned existing publicly available solutions have improved the semiconductor heat dissipation problem in different ways. CN116424906A, for example, uses contact heat dissipation holes in conjunction with a blower during transport to dissipate heat from the upper surface and contact surfaces of the semiconductor equipment during transport. CN119509222A utilizes room-temperature water and fluorinated liquid for two heat exchanges, and uses a PLC-controlled PID electric proportional valve to regulate the flow rate of room-temperature water, precisely achieving heat exchange between water and fluorinated liquid, thereby ensuring that the operating temperature of the production equipment remains at the optimal level. However, these solutions still have the following shortcomings in heat dissipation for silicon carbide semiconductors after high-temperature processing, specifically:

[0009] CN116424906A uses a blower to blow air for heat dissipation. However, due to the difficulty in achieving absolute uniformity in air distribution, the heat dissipation effect of silicon carbide semiconductors in different regions is inconsistent, some regions may be over-cooled, and some regions may be under-cooled, thereby affecting the quality of silicon carbide semiconductors. CN119509222A controls the temperature through heat exchange between water and fluorinated liquid, but does not consider the uniformity of heat dissipation on the surface of the silicon carbide semiconductor as a whole, and may not be able to ensure that each part of the silicon carbide semiconductor can achieve the ideal heat dissipation effect, and local thermal stress concentration may occur. SUMMARY

[0010] The purpose of the present application is to provide an efficient heat dissipation device for high temperature working conditions, by the coordinated arrangement of the first heat dissipation mechanism, the transfer mechanism and the second heat dissipation mechanism, efficient and uniform heat dissipation treatment of silicon carbide semiconductors after high temperature working condition treatment is realized, and problems such as deformation, cracking and damage of electrical properties of silicon carbide semiconductors caused by uneven heat dissipation and improper transfer are avoided.

[0011] To achieve the above purpose, the present application provides the following technical scheme: an efficient heat dissipation device for high temperature working conditions, which is based on air cooling and heat exchange to dissipate heat from silicon carbide semiconductors after high temperature working condition treatment, the efficient heat dissipation device comprises a first heat dissipation mechanism, a transfer mechanism, a second heat dissipation mechanism and a belt discharge line, wherein: the first heat dissipation mechanism comprises a belt feeding line and an air cooling assembly, the belt feeding line is connected to the output side of a high temperature annealing furnace, a heat treatment furnace or a high temperature oxidation furnace, and carries the silicon carbide semiconductors output therefrom, and the air cooling assembly is installed on the belt feeding line; the transfer mechanism is used for cross-device transfer of the silicon carbide semiconductors, and comprises a pedestal, a first servo sliding table, a stand, a second servo sliding table, a third servo sliding table, a support arm, an electric cylinder, a transfer robot and a placing tray, the first servo sliding table is embedded in the end face of the pedestal, and the upper end of the first servo sliding table is connected to the stand; the height of the stand is greater than the height of the belt feeding line, the second servo sliding table is installed on the upper end of the stand, the third servo sliding table is slidably installed at the front end of the second servo sliding table, the support arm is arranged at the front end of the third servo sliding table, the electric cylinder is arranged on both sides of the support arm, and the transfer robot is installed at the end of the electric cylinder; the second heat dissipation mechanism is used for heat exchange and heat dissipation control of the silicon carbide semiconductors, and comprises a box body, a drawer-type tray, a driving member and a heat exchange assembly, the inside of the box body is divided into a front chamber and a rear chamber by a partition plate, and a plurality of drawer-type chambers are arranged on the front side of the box body.

[0012] Preferably, the air cooling assembly comprises an outer shell mounted on the upper side of the belt feeding line, a channel arranged in the middle of the outer shell, and an air cooling array arranged in the channel, the output side of the air cooling array faces downward and is close to the silicon carbide semiconductors carried on the belt feeding line. By accurately controlling and adjusting the parameters such as air speed and air volume of the air cooling array, the heat dissipation intensity can be flexibly adjusted according to the actual temperature condition of the silicon carbide semiconductors and the production process requirements.

[0013] Preferably, the first servo slide, the second servo slide and the third servo slide are respectively used for Y-direction, X-direction and Z-direction movement of the transfer robot, and the transfer robot is used for grabbing the silicon carbide semiconductor from the end of the belt feeding line and transferring it to the input side of the secondary heat dissipation mechanism.

[0014] Preferably, the placing tray is mounted on one side of the pedestal through a support, and the placing tray is used for alternating temporary storage and buffer connection of the material grabbing of the transfer robot on both sides of the support arm.

[0015] Preferably, a turnover box door for sealing the rear chamber is arranged at the rear side of the box body. The design of the turnover box door provides great convenience for the maintenance of the rear chamber internal equipment such as the heat exchange assembly. When regular inspection, troubleshooting or component replacement of the heat exchange assembly is needed, the rear chamber can be quickly opened by easily operating the turnover box door.

[0016] Preferably, the drawer-type tray is horizontally distributed in the multi-layer drawer port chamber of the front chamber, and the box body is provided with a driving member corresponding to the outer side of each layer of the drawer port chamber. The shaft end of the driving member is connected with the drawer-type tray, and the driving member is used for extending to receive material and extending into heat dissipation.

[0017] Preferably, the heat exchange assembly is arranged in the rear chamber, and the heat exchange assembly includes a plate-fin heat exchanger, a circulating pump group and a cold source distribution device. The outlet of the circulating pump group is connected with the refrigerant inlet of the plate-fin heat exchanger through a pressure-resistant pipe, the outlet of the plate-fin heat exchanger is connected with the inlet header of the cold source distribution device through a pipeline, and the outlet distributor of the cold source distribution device is respectively communicated with each drawer port chamber of the front chamber through a plurality of parallel pipelines.

[0018] Preferably, the heat exchange assembly further includes a temperature control module, and the temperature control module includes a main control and a temperature detection module connected with the main control and distributed in the drawer port chamber. The temperature detection module can capture the temperature data of each position in the drawer port chamber in real time and accurately, the main control quickly analyzes and processes the data fed back by the temperature detection module, adjusts the working parameters of the heat exchange assembly such as refrigerant flow and heat exchange power in time according to the preset temperature control strategy, realizes accurate regulation and control of the temperature in the drawer port chamber, effectively avoids damage to the silicon carbide semiconductor caused by excessive temperature fluctuation, and guarantees stable product quality.

[0019] Preferably, the belt discharge line is arranged on one side of the pedestal of the transfer mechanism, and the belt discharge line is used for discharging the silicon carbide semiconductor based on the cooperation of the electric cylinder and the transfer robot after the silicon carbide semiconductor completes the heat dissipation treatment.

[0020] Compared with the prior art, the beneficial effects of the present application are:

[0021] The application realizes efficient and uniform heat dissipation treatment of silicon carbide semiconductors after high-temperature working condition treatment through the cooperative arrangement of the primary heat dissipation mechanism, the transfer mechanism and the secondary heat dissipation mechanism, and avoids problems such as deformation, cracking and damage of electrical properties of silicon carbide semiconductors caused by uneven heat dissipation and improper transfer, and the specific technical effects are as follows:

[0022] 1. The primary heat dissipation mechanism adopts a belt feeding line cooperating with an air cooling assembly to realize preliminary rapid cooling of the silicon carbide semiconductor. In the belt feeding line conveying process, the uniformly distributed air cooling array can provide continuous and relatively uniform air cooling flow to the silicon carbide semiconductor, rapidly taking away the heat on the surface of the silicon carbide semiconductor to realize preliminary rapid cooling.

[0023] 2. The circulating pump group in the heat exchange assembly delivers the refrigerant to the plate-fin heat exchanger for heat exchange, and then the cooled refrigerant is distributed to each drawer chamber of the front chamber through the cold source distribution device. The drawer tray is horizontally distributed in the multiple layers of drawer chambers in the front chamber, so that the silicon carbide semiconductor in each layer of drawer chamber can fully exchange heat with the refrigerant to realize deep heat dissipation. The temperature detection module distributed in the drawer chamber monitors the temperature in real time and feeds back the data to the main control, and the main control dynamically adjusts the operation of the circulating pump group, the flow distribution of the cold source distribution device and other parameters according to the temperature condition to realize precise control of the heat dissipation process and ensure that the silicon carbide semiconductor can be precisely cooled to the target temperature.

[0024] 3. The multi-layer design of the drawer tray allows the silicon carbide semiconductor to be placed in layers, and each layer can independently exchange heat with the refrigerant. The cold source distribution device communicates the refrigerant with each drawer chamber through multiple parallel pipelines, and the refrigerant flow in each layer of drawer chamber is not fixed but dynamically set according to the real-time measured temperature in the drawer chamber. When the temperature detection module feedbacks that the temperature of a drawer chamber is relatively high, the main control will instruct the cold source distribution device to increase the refrigerant flow of the drawer chamber to enhance the heat exchange efficiency and accelerate the cooling; on the contrary, if the temperature is relatively low, the refrigerant flow will be reduced to avoid excessive cooling. This way of accurately regulating the refrigerant flow according to the actual temperature ensures that each layer of silicon carbide semiconductor can be processed under the most suitable heat dissipation conditions, greatly improving the accuracy and effectiveness of heat dissipation. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 It is a schematic diagram of the overall structure of the application;

[0026] Figure 2 It is a schematic diagram of the structure of the primary heat dissipation mechanism in the embodiment of the application;

[0027] Figure 3 It is a schematic diagram of the structure of the transfer mechanism in the embodiment of the application;

[0028] Figure 4Structure diagram of the secondary heat dissipation mechanism in the embodiment of the present application Figure 1 ;

[0029] Figure 5 Structure diagram of the secondary heat dissipation mechanism in the embodiment of the present application Figure 2 .

[0030] In the figure:

[0031] 1, primary heat dissipation mechanism; 101, belt feeding line; 102, air cooling assembly;

[0032] 2, transfer mechanism; 201, pedestal; 202, first servo sliding table; 203, stand column; 204, second servo sliding table; 205, third servo sliding table; 206, supporting arm; 207, transfer mechanical arm; 208, placing tray;

[0033] 3, secondary heat dissipation mechanism; 301, box body; 302, drawer type tray; 303, driving piece; 304, heat exchange assembly; 305, turning box door;

[0034] 4, belt discharging line. DETAILED DESCRIPTION

[0035] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work are within the protection scope of the present application.

[0036] In the description of the present application, it should be noted that the orientations or positional relationships indicated by the terms “vertical”, “upper”, “lower”, “horizontal” and the like are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and thus cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and thus cannot be understood as a limitation on the present application.

[0037] In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms “setting”, “mounting”, “connecting”, “connecting” should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication inside two elements. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0038] Please refer to Figure 1The application provides a technical scheme: a high-efficiency heat dissipation device for high-temperature working conditions, which is used for heat dissipation treatment of silicon carbide semiconductors processed by high-temperature working conditions based on air cooling and heat exchange. The high-efficiency heat dissipation device comprises a first heat dissipation mechanism 1, a transfer mechanism 2, a second heat dissipation mechanism 3 and a belt discharge line 4.

[0039] Please refer to Figure 2 In the embodiment, the first heat dissipation mechanism 1 comprises a belt feeding line 101 and an air cooling assembly 102. The belt feeding line 101 is connected to the output side of a high-temperature annealing furnace, a heat treatment furnace or a high-temperature oxidation furnace and carries the silicon carbide semiconductors output by the furnace. The air cooling assembly 102 is arranged on the upper side of the belt feeding line 101 and comprises a shell arranged on the upper side of the belt feeding line 101, a channel arranged in the middle of the shell and an air cooling array arranged in the channel. The output side of the air cooling array faces downward and is close to the silicon carbide semiconductors carried on the belt feeding line 101.

[0040] Please refer to Figure 3 In the embodiment, the transfer mechanism 2 is used for cross-device transfer of the silicon carbide semiconductors. The transfer mechanism 2 comprises a pedestal 201, a first servo sliding table 202, a column 203, a second servo sliding table 204, a third servo sliding table 205, a support arm 206, an electric cylinder (not shown in the figure), a transfer manipulator 207 and a placing tray 208. The first servo sliding table 202 is embedded in the end face of the pedestal 201, and the upper end of the first servo sliding table 202 is slidably connected to the column 203. The height of the column 203 is greater than the height of the belt feeding line 101. The second servo sliding table 204 is arranged on the upper end of the column 203. The third servo sliding table 205 is slidably arranged at the front end of the second servo sliding table 204. The support arm 206 is arranged at the front end of the third servo sliding table 205. The electric cylinder is arranged on both sides of the support arm 206. The transfer manipulator 207 is arranged at the end of the electric cylinder. The first servo sliding table 202, the second servo sliding table 204 and the third servo sliding table 205 are respectively used for Y-direction, X-direction and Z-direction movement of the transfer manipulator 207. The transfer manipulator 207 is used for grabbing the silicon carbide semiconductors from the end of the belt feeding line 101 and transferring them to the input side of the second heat dissipation mechanism 3. The placing tray 208 is arranged on one side of the pedestal 201 through a support. The placing tray 208 is used for temporary storage and buffer connection of the materials grabbed by the transfer manipulators 207 on both sides of the support arm 206.

[0041] Please refer to Figure 4 , Figure 5In this embodiment, the secondary heat dissipation mechanism 3 is used for heat exchange and heat dissipation control of silicon carbide semiconductors. The secondary heat dissipation mechanism 3 includes a housing 301, a drawer tray 302, a drive component 303 (servo electric actuator), and a heat exchange assembly 304. The inner side of the housing 301 is divided into a front chamber and a rear chamber by a partition. A flip-up door 305 for sealing the rear chamber is provided on the rear side of the housing 301. The front side of the housing 301 has multiple drawer openings. The drawer tray 302 is horizontally distributed in the multiple drawer openings of the front chamber. The outer side of the housing 301 corresponds to each drawer opening. A drive unit 303 is configured, with its shaft end connected to the drawer tray 302. The drive unit 303 is used for extending out of the drawer tray 302 to receive materials and extending in to dissipate heat. A heat exchange assembly 304 is configured in the rear chamber. The heat exchange assembly 304 includes a plate-fin heat exchanger, a circulating pump group, and a cold source distribution device. The outlet of the circulating pump group is connected to the refrigerant inlet of the plate-fin heat exchanger through a pressure-resistant pipe. The outlet of the plate-fin heat exchanger is connected to the inlet manifold of the cold source distribution device through a pipeline. The outlet distributor of the cold source distribution device is connected to each drawer compartment of the front chamber through multiple parallel pipelines.

[0042] In this embodiment, the heat exchange component 304 further includes a temperature control module, which includes a main controller and temperature detection modules connected to the main controller and distributed in the drawer compartment.

[0043] Please see Figure 1 In this embodiment, the belt discharge line 4 is disposed on one side of the platform 201 of the transfer mechanism 2. The belt discharge line 4 is used to transfer the silicon carbide semiconductor out based on the cooperation of the electric cylinder and the transfer robot 207 after the silicon carbide semiconductor has completed heat dissipation treatment.

[0044] In conjunction with the above embodiments, the operating steps of the heat dissipation device of the present invention include:

[0045] 1) Primary heat dissipation stage: Silicon carbide semiconductors treated in a high-temperature annealing furnace, heat treatment furnace, or high-temperature oxidation furnace are conveyed to the starting end of the belt conveyor 101. The belt conveyor 101 operates at a set conveying speed, transporting the silicon carbide semiconductors to the end. When the silicon carbide semiconductors enter the effective area of ​​the air-cooling component 102, the air-cooling array outputs cold air at a set wind speed. The cold air acts evenly on the silicon carbide semiconductors, providing initial and rapid cooling. During the conveying process, the silicon carbide semiconductors continuously exchange heat with the cold air, and the surface temperature gradually decreases.

[0046] 2) Transport stage: due to the high heat of the silicon carbide semiconductor after the primary heat dissipation process, the artificial transplanting efficiency is slow, therefore a mechanical arm is used for transport. When the silicon carbide semiconductor at the end of the belt feeding line 101 reaches the designated position, two transport manipulators 207 move to the top of the end of the belt feeding line 101 and the top of the placing tray 208 under the cooperation of the corresponding servo slides (Y, X, Z). One of the transport manipulators 207 (above the feeding line) descends to grab the silicon carbide semiconductor and transfers it to the placing tray 208, and the other transport manipulator 207 (above the placing tray 208) grabs the silicon carbide semiconductor from the placing tray 208 and transfers it to the secondary heat dissipation mechanism 3. The two transport manipulators 207 alternately perform the grabbing and transferring actions according to the above steps.

[0047] 3) Secondary heat dissipation stage: when the transport manipulator 207 grabs the silicon carbide semiconductor to the secondary heat dissipation mechanism 3, the driving member 303 starts and makes the drawer-type tray 302 extend. The transport manipulator 207 transplants the silicon carbide semiconductor to the drawer-type tray 302, and the drawer-type tray 302 resets under the action of the driving member 303 to extend for heat dissipation. During the heat dissipation process, the cold source distribution device distributes the refrigerant to the drawer opening chamber through multiple parallel pipelines according to the initial set flow distribution ratio, and performs deep heat dissipation on the silicon carbide semiconductor. The temperature detection module distributed in the drawer opening chamber monitors the temperature of the silicon carbide semiconductor in real time and rapidly feeds back the temperature data to the main control. The main control compares and analyzes the received temperature data with the set target temperature range. If the temperature in a certain drawer opening chamber is higher than the target temperature range, the main control controls the cold source distribution device to increase the refrigerant flow of the drawer opening chamber to significantly enhance the heat exchange efficiency and accelerate the cooling; if the temperature is lower than the target temperature range, the refrigerant flow of the drawer opening chamber is reduced to avoid excessive cooling.

[0048] 4) Discharging stage: when the temperature detection module detects that the temperature of the silicon carbide semiconductor in a certain drawer opening chamber reaches the target temperature range and remains stable for a period of time, the control system determines that the heat dissipation of the silicon carbide semiconductor is completed. At this time, the drawer-type tray 302 extends under the action of the driving member 303, one of the transport manipulators 207 moves to the top of the drawer opening chamber where the heat dissipation is completed under the drive of the servo slide, descends and grabs the silicon carbide semiconductor, and then transplants it to the belt discharging line 4 and is transferred out by the belt discharging line 4.

[0049] It is worth noting that the entire device is controlled by the total control system. Since the control system matches common devices, which belong to existing mature technology, the electrical connection relationship and specific circuit structure are not described here.

[0050] It is also noted that in actual production, the silicon carbide semiconductor is usually loaded in a semiconductor jig when high-temperature processing is performed. Based on this, the transfer and other operations for the silicon carbide semiconductor mentioned in the above embodiments are essentially the transfer of the semiconductor jig loaded with the silicon carbide semiconductor.

[0051] The embodiments of the present application are given for illustration and description only, although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary, and should not be construed as limiting the present application, and any changes, modifications, replacements and variations of the above embodiments made by those skilled in the art within the scope of the present application should be included in the protection scope of the present application.

Claims

1. A high-efficiency heat dissipation device for high-temperature operating conditions, wherein the high-efficiency heat dissipation device performs heat dissipation treatment on silicon carbide semiconductors after high-temperature operating conditions based on air cooling and heat exchange, the high-efficiency heat dissipation device comprising a primary heat dissipation mechanism (1), a transfer mechanism (2), a secondary heat dissipation mechanism (3), and a belt conveyor (4), characterized in that: The primary heat dissipation mechanism (1) includes a belt feeding line (101) and an air cooling component (102). The belt feeding line (101) is connected to the output side of a high-temperature annealing furnace, heat treatment furnace or high-temperature oxidation furnace and carries the silicon carbide semiconductors output from it. The air cooling component (102) is installed on the belt feeding line (101). The transfer mechanism (2) is used for cross-device transfer of silicon carbide semiconductors. The transfer mechanism (2) includes a base (201), a first servo slide (202), a column (203), a second servo slide (204), a third servo slide (205), a support arm (206), an electric cylinder, a transfer robot (207), and a placement tray (208). The first servo slide (202) is embedded in the end face of the base (201), and the upper end of the first servo slide (202) is slidably connected to the column (203). The height of the column (203) is greater than the height of the belt feeding line (101). The second servo slide (204) is installed on the upper end of the column (203). The third servo slide (205) is slidably mounted on the front end of the second servo slide (204). The support arm (206) is set at the front end of the third servo slide (205). Electric cylinders are installed on both sides of the support arm (206), and the transfer robot (207) is installed at the end of the electric cylinder. The secondary heat dissipation mechanism (3) is used for heat exchange and heat dissipation control of silicon carbide semiconductors. The secondary heat dissipation mechanism (3) includes a housing (301), a drawer tray (302), a drive unit (303), and a heat exchange assembly (304). The inner side of the housing (301) is divided into a front chamber and a rear chamber by a partition. The front side of the housing (301) is provided with a multi-layer drawer opening chamber.

2. The high-efficiency heat dissipation device for high-temperature operating conditions according to claim 1, characterized in that: The air-cooling assembly (102) includes a housing mounted on the upper side of the belt feeding line (101), a channel located in the middle of the housing, and an air-cooling array located in the channel. The output side of the air-cooling array faces downward and is close to the silicon carbide semiconductor carried on the belt feeding line (101).

3. The high-efficiency heat dissipation device for high-temperature operating conditions according to claim 1, characterized in that: The first servo slide (202), the second servo slide (204), and the third servo slide (205) are used to move the transfer robot (207) in the Y, X, and Z directions, respectively. The transfer robot (207) is used to grab silicon carbide semiconductors from the end of the belt feeding line (101) and transfer them to the input side of the secondary heat dissipation mechanism (3).

4. The high-efficiency heat dissipation device for high-temperature operating conditions according to claim 1, characterized in that: The placement tray (208) is mounted on one side of the base (201) via a bracket.

5. The high-efficiency heat dissipation device for high-temperature operating conditions according to claim 1, characterized in that: A flip-up door (305) for sealing the rear chamber is provided on the rear side of the housing (301).

6. The high-efficiency heat dissipation device for high-temperature operating conditions according to claim 1, characterized in that: The drawer tray (302) is horizontally distributed in the multi-layer drawer compartments of the front chamber. The outer side of the box body (301) is equipped with a drive unit (303) corresponding to each drawer compartment. The shaft end of the drive unit (303) is connected to the drawer tray (302). The drive unit (303) is used for the drawer tray (302) to extend to receive materials and to extend into to dissipate heat.

7. The high-efficiency heat dissipation device for high-temperature operating conditions according to claim 1, characterized in that: The heat exchange assembly (304) is disposed in the rear chamber. The heat exchange assembly (304) includes a plate-fin heat exchanger, a circulating pump group and a cold source distribution device. The outlet of the circulating pump group is connected to the refrigerant inlet of the plate-fin heat exchanger through a pressure-resistant pipe. The outlet of the plate-fin heat exchanger is connected to the inlet manifold of the cold source distribution device through a pipeline. The outlet distributor of the cold source distribution device is connected to each drawer of the front chamber through multiple parallel pipelines.

8. The high-efficiency heat dissipation device for high-temperature operating conditions according to claim 7, characterized in that: The heat exchange assembly (304) also includes a temperature control module, which includes a main controller and a temperature detection module connected to the main controller and distributed in the drawer compartment.

9. A high-efficiency heat dissipation device for high-temperature operating conditions according to claim 1, characterized in that: The belt discharge line (4) is located on one side of the platform (201) of the transfer mechanism (2).

Images