Temperature control method and electronic device

Abstract

The application discloses a temperature control method and electronic equipment, the method comprises the following steps: obtaining target temperature data and the current processing time of a thermal press head; determining whether the semiconductor workpiece should enter the heat dissipation stage according to the heat dissipation time point in the target temperature data and the processing time; and controlling the heat dissipation device to dissipate heat from the heating sheet based on the target temperature data and the temperature of the semiconductor workpiece, so that the temperature of the semiconductor workpiece approaches the target processing temperature in the target temperature data. In the application, the slope of the target heat dissipation temperature curve of the target temperature data in the heat dissipation stage is located in a preset slope range, the heat dissipation device is controlled to dissipate heat from the heating sheet based on the target temperature data and the temperature of the semiconductor workpiece, and when the absolute value of the slope of the target heat dissipation temperature curve is large, the heat dissipation speed can be improved based on the target temperature data to quickly dissipate heat from the semiconductor workpiece, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit manufacturing technology, and more specifically to a temperature control method and electronic device. Background Technology

[0002] Thermo-press bonding technology is widely used in the field of integrated circuit manufacturing technology, especially suitable for high-precision connection between semiconductor workpieces and substrates, and is a key process to ensure the electrical performance and mechanical reliability of devices.

[0003] In the existing technology, the temperature control method in thermo-bonding mainly involves introducing cold air into the airflow channel groove of the heat insulation block to dissipate heat from the semiconductor workpiece during the heat dissipation stage.

[0004] However, some semiconductor components require extremely high heat dissipation rates, and existing technologies cannot adequately address these requirements. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this application provides a temperature control method and electronic device. The method utilizes target temperature data to determine if the slope of the target heat dissipation temperature curve during the heat dissipation stage falls within a preset slope range. When it is determined that a semiconductor workpiece should enter the heat dissipation stage, the heat dissipation device of the hot press head, based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device, dissipates heat from the heating element, thereby bringing the temperature of the semiconductor workpiece closer to the target processing temperature corresponding to the heat dissipation stage in the target temperature data. When the absolute value of the slope of the target heat dissipation temperature curve is large, the heat dissipation rate can be increased based on the target temperature data to rapidly dissipate heat from the semiconductor workpiece, thus bringing the temperature of the semiconductor workpiece closer to the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0006] To address the above problems, the present invention provides the following technical solution:

[0007] In a first aspect, embodiments of this application provide a temperature control method, comprising: acquiring target temperature data of the processing process and the current processing time of the hot press head; determining whether a semiconductor workpiece placed on a heating element of the hot press head should enter a heat dissipation stage based on the heat dissipation time point in the target temperature data and the processing time; wherein the slope of the target heat dissipation temperature curve of the target temperature data in the heat dissipation stage is within a preset slope range; when it is determined that the semiconductor workpiece should enter the heat dissipation stage, controlling the heat dissipation device of the hot press head to dissipate heat from the heating element based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0008] In a second aspect, embodiments of this application provide an electronic device, the electronic device comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the temperature control method as described in the first aspect.

[0009] This application provides a temperature control method and electronic device. The method utilizes target temperature data to determine if the slope of the target heat dissipation temperature curve during the heat dissipation stage falls within a preset slope range. When it is determined that a semiconductor workpiece should enter the heat dissipation stage, the heat dissipation device of the hot press head, based on the target temperature data and the temperature detected by the temperature detection device, dissipates heat from the heating element, thereby bringing the temperature of the semiconductor workpiece closer to the target processing temperature corresponding to the heat dissipation stage in the target temperature data. When the absolute value of the slope of the target heat dissipation temperature curve is large, the heat dissipation rate can be increased based on the target temperature data to rapidly dissipate heat from the semiconductor workpiece, thus bringing the temperature of the semiconductor workpiece closer to the target processing temperature corresponding to the heat dissipation stage in the target temperature data. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of the overall structure of the hot press head provided in the embodiment of this application. Figure 2 This is an exploded view of the structure between the heating element, the heat insulation block, and the base provided in the embodiments of this application. Figure 3 This is a schematic diagram of the structure of the heating element provided in the embodiment of this application. Figure 4 yes Figure 3 Enlarged schematic diagram of part A in the middle. Figure 5 This is a schematic diagram of the resistance wire provided in the embodiment of this application. Figure 6 This is a schematic diagram of the front structure of the heat insulation block provided in the embodiment of this application. Figure 7 This is a schematic diagram of the back structure of the heat insulation block provided in the embodiment of this application. Figure 8 This is a schematic diagram of the airflow state for heat dissipation provided in the embodiments of this application. Figure 9 This is a schematic diagram illustrating the cooperation between the heat dissipation component and the heat insulation block provided in the embodiments of this application. Figure 10 This is a top view of the heat sink and heat insulation block provided in the embodiments of this application. Figure 11 This is a schematic diagram of the heat sink provided in the embodiment of this application with one side end face removed. Figure 12 This is a perspective view of the heat dissipation component provided in the embodiments of this application. Figure 13 This is a schematic flowchart of the temperature control method provided in the embodiments of this application. Figure 14 This is a schematic diagram of multiple processing temperature curves provided in the embodiments of this application. Figure 15 This is a schematic diagram of multiple target heat dissipation temperature curves and heat dissipation temperature curves corresponding to multiple heat dissipation modes provided in the embodiments of this application. Detailed Implementation

[0011] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "multiple" means two or more, unless otherwise explicitly specified.

[0012] The temperature control method and electronic device of this application are specifically applied to apparatus for handling semiconductor workpieces during the manufacturing or processing of semiconductor or solid-state devices or components, belonging to the field of semiconductor device special equipment manufacturing. The semiconductor workpiece may also be referred to as a wafer, chip, or similar material.

[0013] The temperature control method of this application is applied in a hot press head (or hot press bonding equipment) to control the hot press head to process semiconductor workpieces. Therefore, this temperature control method belongs to the field of industrial monitoring and scheduling software and is applied in industrial monitoring software for supervision, control and data acquisition (or data acquisition and monitoring control, data acquisition control).

[0014] This application provides a temperature control method and electronic device. Based on the target temperature data, the slope of the target heat dissipation temperature curve during the heat dissipation stage is within a preset slope range. When it is determined that a semiconductor workpiece should enter the heat dissipation stage, the heat dissipation device of the hot press head is controlled to dissipate heat from the heating element based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device. This allows the temperature of the semiconductor workpiece to approach the target processing temperature corresponding to the heat dissipation stage in the target temperature data. When the absolute value of the slope of the target heat dissipation temperature curve is large, the heat dissipation rate can be increased based on the target temperature data to rapidly dissipate heat from the semiconductor workpiece, thereby allowing the temperature of the semiconductor workpiece to approach the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0015] The temperature control method provided in this application will be described in detail below with reference to the accompanying drawings.

[0016] Please see Figures 1 to 7 , Figure 1 This is a schematic diagram of the overall structure of the hot press head provided in the embodiments of this application. Figure 2 This is an exploded view of the structure between the heating element, the heat insulation block, and the base provided in the embodiments of this application. Figure 3 This is a schematic diagram of the structure of the heating element provided in the embodiment of this application. Figure 4 yes Figure 3 Enlarged diagram of part A in the middle. Figure 5 This is a schematic diagram of the resistance wire structure provided in the embodiments of this application. Figure 6 This is a schematic diagram of the front structure of the heat insulation block provided in the embodiment of this application. Figure 7 This is a schematic diagram of the back structure of the heat insulation block provided in the embodiment of this application.

[0017] like Figures 1-7 As shown, this invention provides a hot press head, including a base 1, a heating element 3, a heat insulation block 2, and a guide plate 9. The heating element 3 is used to heat a semiconductor workpiece. The heat insulation block 2 is installed between the base 1 and the heating element 3 to isolate the heat from the heating element 3. An exhaust hole 8 is provided on the side wall of the heat insulation block 2 to discharge the heat from the heating element 3. The guide plate 9 is disposed at the exhaust hole 8, and a guide hole 17 is provided on the guide plate 9. The guide hole 17 is located on the side wall of the heat insulation block 2 facing the base 1, and the fluid discharged from the exhaust hole 8 flows through the guide plate 9 and exits through the guide hole 17. The fluid includes at least one of gas and liquid. In this embodiment, the guide plate 9 is used at the exhaust hole 8, so that the fluid discharged from the exhaust hole 8 is discharged along the guide plate 9, and under the action of the guide hole 17 on the guide plate 9, the discharged fluid is moved away from the heat insulation block 2 and the guide plate 9, thereby ensuring that the heat insulation block 2 and the guide plate 9 can cool down rapidly. Specifically, the guide plate 9 includes a first plate 91, a second plate 92 and a third plate 93. The first plate 91 is horizontally arranged, flush with the top surface of the heat insulation block 2 and located on the side wall of the heat insulation block 2, so that it is located above the end of the exhaust hole 8 facing away from the heat dissipation cavity. When the fluid is discharged from the heat dissipation cavity along the exhaust hole and moves upward, the first plate 91 can block the hot fluid from moving towards the heating element 3.

[0018] In some embodiments, one end of the second plate 92 is connected to the first plate 91, and the other end extends toward the base 1. The second plate 92 is inclined and moves away from the side connected to the first plate 91 away from the heat insulation block 2. At this time, the fluid reaching the second plate 92 can move downward along the inclined surface of the second plate 92.

[0019] In some embodiments, the third plate 93 is disposed on the side of the second plate 92 facing away from the first plate 91, and the third plate 93 is vertically disposed, with one end connected to the second plate 92 and the other end extending towards the base 1. The guide hole 17 is opened on the third plate 93, and one end of the guide hole 17 faces the direction of the heat insulation block 2. When the fluid moving downward along the second plate 92 reaches the third plate 93, the fluid can be discharged from the guide hole 17 and away from the hot press head. The fluid discharged from the exhaust hole 8 can form a smooth guide path along the first plate 91, the second plate 92 and the third plate 93. With the help of gravity and structural guidance, the hot fluid can be discharged efficiently and smoothly in a directional manner without affecting the processing of the workpiece.

[0020] In some implementations, such as Figures 2-7As shown, the support member 4 is disposed between the heating element 3 and the heat insulation block 2 and connected to the top of the heat insulation block 2. The support member 4 is used to support the heating element 3 on the heat insulation block 2. There is a gap between the heating element 3 and the heat insulation block 2, and the gap between the heating element 3 and the heat insulation block 2 forms a heat dissipation cavity. The first heat dissipation hole 5 is disposed on the heat insulation block 2, and one end of it is connected to the heat dissipation cavity. The pipe joint 6 is disposed on the heat insulation block 2 or the base 1, and is used to sequentially introduce fluid into the first heat dissipation hole 5 and the heat dissipation cavity. By setting only a support member 4 between the heating element 3 and the heat insulation block 2, a gap is left between the heating element 3 and the heat insulation block 2 to form a heat dissipation cavity. The fluid is introduced into the first heat dissipation hole 5 through the pipe joint 6 and diffuses from the first heat dissipation hole 5 into the heat dissipation cavity. Therefore, heat dissipation can be achieved directly through fluid contact without the need for contact through channels. This greatly reduces the direct contact area between the heating element 3 and the heat insulation block 2, reduces heat conduction, and increases the heating rate of the heating element 3. At the same time, after the fluid enters the heat dissipation cavity through the first heat dissipation hole 5, it will evenly wash the back of the heating element 3. The fluid and the back of the heating element 3 are in uniform contact, avoiding the fluid being confined in the channel, which significantly improves the heat dissipation efficiency and uniformity.

[0021] In some embodiments, the pipe connector 6 is disposed and connected to the side wall of the base 1. The base 1 has a second heat dissipation hole 10 that penetrates the top surface of the base 1. The pipe connector 6 and the second heat dissipation hole 10 are connected. When the base 1 and the heat insulation block 2 are connected, the first heat dissipation hole 5 and the second heat dissipation hole 10 are connected, thereby forming a connected heat dissipation channel. After external fluid is introduced through the pipe connector 6, the fluid can be introduced into the second heat dissipation hole 10 and the first heat dissipation hole 5 in sequence under the action of the pipe connector 6, and enter the heat dissipation cavity from the top of the first heat dissipation hole 5 to dissipate the heat at the top of the heat insulation block 2. By placing the pipe connector 6 on the more stable base 1, the structure of the heat insulation block 2 is simplified, and a reliable and easy-to-assemble air circuit connection can be achieved by connecting the heat insulation block 2 and the base 1.

[0022] In some implementations, such as Figure 2 and Figure 3 As shown, a heat dissipation groove 7 is formed on the side of the heat insulation block 2 facing the heating element 3. The heat dissipation groove 7 occupies most of the area of ​​the top surface of the heat insulation block 2, leaving only four narrow sides. The support members 4 are all located inside the heat dissipation groove 7, with one end connected to the bottom of the groove 7 and the other end abutting against the heating element 3. The internal space of the heat dissipation groove 7 forms a heat dissipation cavity. The first heat dissipation hole 5 is set at the bottom of the heat dissipation groove 7 and extends towards the bottom of the heat insulation block 2 until it penetrates the bottom of the heat insulation block 2. Optionally, two sets of vent holes 8 are provided, with three vent holes in each set. The two sets of vent holes 8 are respectively set on both sides of the heat dissipation groove 7 and communicate with the heat dissipation cavity inside the heat dissipation groove 7. In this case, the vent holes 8 can discharge the fluid in the heat dissipation cavity from the heat insulation block 2.

[0023] In some embodiments, at least four first heat dissipation holes 5 are provided. In this embodiment, four first heat dissipation holes 5 are provided, but it is not limited to only four; three or five, etc., can also be provided. The number of first heat dissipation holes 5 is not limited in this embodiment. In some embodiments, the four first heat dissipation holes 5 are arranged in a rectangular pattern on the top surface of the heat insulation block 2, and the four first heat dissipation holes 5 are evenly distributed. In this case, the four first heat dissipation holes 5 can ensure that the fluid is evenly injected into the heat dissipation cavity from the multiple first heat dissipation holes 5, thereby avoiding local overheating and ensuring the uniformity of heat dissipation. Furthermore, the opening of the first heat dissipation holes 5 facing the heating element 3 is set to be open, which effectively reduces the resistance of the fluid entering the heat dissipation cavity, promotes the diffusion of the fluid around the first heat dissipation holes 5, optimizes the fluid path, and is conducive to uniform heat dissipation.

[0024] In some implementations, such as Figure 1 As shown, the support member 4 includes a first column 41, a second column 42, and a third column 43. Multiple first columns 41 are arranged in a rectangular pattern on the side of the heat insulation block 2 facing the heating element 3. Specifically, four first columns 41 are arranged in a rectangular pattern at the bottom of the heat dissipation groove 7, each located at one of the four corners of the rectangle, surrounding the first heat dissipation hole 5. The second column 42 is located at the center of the side of the heat insulation block 2 facing the heating element 3, thus allowing the second column 42 to be positioned among the multiple first columns 41. There are also multiple third columns 43. In this embodiment, there are 4 groups of third columns 43, with two columns in each group. A group of third columns 43 is provided between each pair of adjacent first columns 41. There are gaps between the third columns 43 and between the third columns 43 and the first column 41. One end of the first column 41, the second column 42 and the third column 43 are connected to the heat insulation block 2, and the other end extends towards the heating element 3 until the first column 41, the second column 42 and the third column 43 are flush with the opening of the heat dissipation groove 7, so that the first column 41, the second column 42 and the third column 43 can abut against the heating element 3. By using the rectangular arrangement of the first column 41, the third column 43, and the second column 42 in the support member 4, the heating element 3 can be stably supported. While providing stable load-bearing force to the heating element 3, the gaps between the first column 41, the second column 42, and the third column 43 can be used to guide the fluid to flow in all directions, so that the fluid can flow evenly at the bottom of the heating element 3, eliminating heat dissipation dead corners and improving the overall heat dissipation uniformity.

[0025] In some embodiments, the heating element 3 is detachably connected to the first post 41 and the second post 42. Specifically, bolts are sequentially inserted into the heating element 3 and the first post 41 or the second post 42, and threadedly connected to the first post 41 or the second post 42, thereby achieving detachability and greatly facilitating the replacement and maintenance of the heating element 3. Optionally, the heating element 3 is connected to the rectangularly arranged first post 41 and the second post 42, improving the stability of the heating element 3 installation.

[0026] In some implementations, such as Figure 7 As shown, the heat insulation block 2 has a hollow portion 14 and a protrusion 15 on the side facing the base 1. A gap exists between the hollow portion 14 and the base 1, while the protrusion 15 fits snugly against the side of the base 1 facing the heat insulation block 2. By providing the protrusion 15 and the hollow portion 14 on the side of the heat insulation block 2 facing the base 1, the heat insulation block 2 and the base 1 only make partial contact at the protrusion 15, while a gap is formed between the hollow portion 14 and the base 1. This significantly reduces the contact area between the heat insulation block 2 and the base 1, substantially reducing the heat transfer efficiency from the heat insulation block 2 to the base 1 through the contact surface. This improves the heat insulation performance of the heat insulation block 2, effectively reducing heat loss and protecting the base 1 and downstream components.

[0027] In some embodiments, the protrusion 15 includes a first component 151 and a second component 152, wherein both the first component 151 and the second component 152 are integrally formed with the heat insulation block 2. The first component 151 is located at the center of the side of the heat insulation block 2 facing the base 1 and is configured as an X-shape. The second component 152 is disposed around the periphery of the side of the heat insulation block 2 facing the base 1. A cutout 14 is disposed between the first component 151 and the second component 152. The protrusion 15 further defines the central first component 151 and the peripheral second component 152, so that the central first component 151 provides the main load-bearing capacity, the peripheral second component 152 provides the edge load-bearing capacity, and the first component 151 and the second component 152 together provide the load-bearing capacity for the heat insulation block 2. The cutout 14 between the first component 151 and the second component 152 minimizes the contact area between the heat insulation block 2 and the base 1, ensuring the stability of the heat insulation block 2 while minimizing the contact area, thus achieving a balance between structural strength and heat insulation effect. Furthermore, the second component 152 has four sections located at the four corners of the side of the heat insulation block 2 facing the base 1. This symmetrical distribution design ensures that when the heat insulation block 2 is installed on the base 1, the support points are evenly distributed at the four most stable corners. While ensuring stable load-bearing capacity, it can minimize the contact area with the base 1, further optimizing the heat insulation effect. At the same time, the perforated portion 14 extends into the second component 152 until it penetrates the side wall of the heat insulation block 2. At this point, the perforated portion 14 allows some external airflow to pass through it, thereby more effectively removing locally accumulated heat and further improving the overall heat insulation and heat dissipation performance.

[0028] In some implementations, such as Figure 7 As shown, the heat insulation block 2 has multiple first through holes 11. These multiple first through holes 11 are connected to... Figure 6 Multiple first pillars 41 and second pillars 42 are correspondingly arranged. A first through hole 11 penetrates the top and bottom of the heat insulation block 2, and the first pillars 41 and second pillars 42 are respectively fixed within their corresponding first through holes 11. Bolts on the first pillars 41 and second pillars 42 all extend into the first through holes 11. Furthermore, multiple first through holes 11 are all provided on the first component 151 of the protrusion 15. By providing the first through holes 11, the actual contact area between the protrusion 15 and the base 1 can be directly reduced, further improving the heat insulation performance. Simultaneously, it provides space for the bolts, allowing them to extend towards the bottom of the first pillar 41 or the second pillar 42.

[0029] In some implementations, such as Figure 1As shown, to connect the base 1 and the heat insulation block 2, a first connecting part 12 is integrally formed on the side wall of the base 1 facing the heat insulation block 2, and a second connecting part 13 corresponding to the first connecting part 12 is integrally formed on the side wall of the heat insulation block 2 facing the base 1. Two first connecting parts 12 and two second connecting parts 13 are provided, symmetrically arranged about the base 1 and symmetrically arranged about the heat insulation block 2. When installing the base 1 and the heat insulation block 2, the two first connecting parts 12 and the two second connecting parts 13 are arranged one-to-one, and the corresponding first connecting parts 12 and second connecting parts 13 are detachably connected by bolts. This detachable connection facilitates the installation, removal, and replacement of the heat insulation block 2, while avoiding connection on the bottom surface of the heat insulation block 2 or the top surface of the base 1. By placing the connection point on the side wall, rather than on the main heat conduction path, it helps maintain good heat insulation performance. Furthermore, the hot press head also includes a first pipe connector 18, which is disposed on the base 1 or the heat insulation block 2. The first pipe connector 18 is connected to the first through hole 11. The bolt 16 has a second through hole 19, which penetrates the top and bottom walls of the bolt 16, thereby connecting the second through hole 19 with the first through hole 11. The first pipe connector 18 is used to sequentially draw air from the first through hole 11 and the second through hole 19, thereby adsorbing the workpiece to be hot-pressed on the heating element 3. At this time, the first through hole 11 not only provides space for the bolt 16 to extend to the bottom of the first column 41 or the second column 42, but also provides a physical channel for vacuum adsorption. The bolt 16 can not only install the heating element 3, but also act as a suction head, providing a physical channel for vacuum adsorption. Therefore, there is no need to set up an adsorption structure, which optimizes the structure and reduces the complexity of the structure. Specifically, the first pipe connector 18 is specifically disposed on the base 1, and the base 1 has a third through hole 23. The first pipe connector 18 and the third through hole 23 are connected. When the base 1 and the heat insulation block 2 are connected, the third through hole 23 and the first through hole 11 are sealed and connected. Integrating the key first pipe connector 18 onto the more stable base 1 simplifies the structure of the heat insulation block 2. At this time, the third through hole 23, the first through hole 11, and the second through hole 19 can be fully connected, forming a complete adsorption channel for vacuum adsorption of semiconductor workpieces. Further, as... Figure 2 and Figure 4As shown, the base 1 has a groove 20 corresponding to the third through hole 23. The third through hole 23 is located on the bottom wall of the groove 20. A sealing element 21 is installed in the groove 20, and the third through hole 23 passes through the sealing element 21. When the base 1 and the heat insulation block 2 are connected, the third through hole 23 communicates with the first through hole 11, and the sealing element 21 abuts against the heat insulation block 2, thereby ensuring the airtightness of the connection between the third through hole 23 and the first through hole 11 and preventing vacuum leakage. Optionally, the sealing element 21 is made of sealing silicone, and the first post 41 and the second post 42 are fixed and seal the top of the first through hole 11, thereby preventing vacuum leakage between the first through hole 11 and the second through hole 19.

[0030] In some implementations, such as Figure 2 and Figure 3 As shown, an adsorption groove 22 is provided on the side of the heating element 3 facing away from the heat insulation block 2. The adsorption groove 22 extends on the heating element 3, and one end of the bolt 16 facing away from the first through hole 11 is located in the adsorption groove 22. Specifically, the top of the bolt 16 corresponding to the first post 41 is located in the adsorption groove 22 and does not protrude from the opening of the adsorption groove 22. Since the top of the bolt 16 is located in the adsorption groove 22, the negative pressure of the second through hole 19 directly acts on the space of the adsorption groove 22, thereby forming a negative pressure cavity. When the workpiece being processed covers the adsorption groove 22, the negative pressure can be effectively conducted and distributed in the contact area of ​​the workpiece, improving the reliability and uniformity of adsorption. Optionally, the bolts are made of a material with a low coefficient of thermal expansion, such as titanium, nickel-based alloys, or aluminum.

[0031] Please see Figure 8 , Figure 8 This is a schematic diagram of the airflow state provided in the embodiments of this application. When the heating element 3 dissipates heat, the fluid flows into the heat dissipation cavity through the first heat dissipation hole 5 and then exits through the exhaust hole 8. The fluid flow state is as follows: Figure 8 As shown.

[0032] Please see Figures 9-12 , Figure 9 This is a schematic diagram illustrating the cooperation between the heat dissipation component and the heat insulation block provided in an embodiment of this application. Figure 10 This is a top view of the heat sink and heat insulation block provided in the embodiments of this application. Figure 11 This is a schematic diagram of the heat sink with one end face removed according to an embodiment of this application. Figure 12 This is a perspective view of the heat dissipation component provided in an embodiment of this application. Figures 9-12As shown, in some embodiments, a heat sink 442 is provided inside the heat dissipation cavity. The heat sink 442 can contact or separate from the heating element 3. When the heat sink 442 contacts the heating element 3, it can cool the heating element 3; when the heat sink 442 separates from the heating element 3, the heating element 3 does not cool down. By utilizing the contact between the heat sink 442 and the heating element 3, heat from the heating element 3 is quickly transferred to the heat sink 442 through heat conduction, thereby achieving rapid cooling. When the heat sink 442 separates from the heating element 3, it does not actively absorb heat from the heating element 3, ensuring stable heat output from the heating element 3 and guaranteeing its normal operation. Figures 9-12 As shown, optionally, the heat sink 442 is a mesh structure formed by hollow rods and rings. By forming a mesh structure, the contact area with the heating element 3 is increased, ensuring rapid heat conduction. Optionally, the heat sink 442 is made of metal. The thermal conductivity of metal is utilized to accelerate the rapid heat conduction. Preferably, the metal material can be one or more of aluminum, iron, alloys, etc., without limitation.

[0033] like Figure 12 As shown, optionally, the sides of the rod and ring are provided with connecting holes 443 that connect the inside and outside of the rod and ring. The interior of the rod and ring is connected to the first heat dissipation hole 5. Fluid can flow from the inside of the rod and ring to the outside through the connecting holes. When fluid is introduced into the rod and ring through the first heat dissipation hole 5, the fluid can push the rod and ring to contact the heating element 3. By using fluid to push the rod and ring to contact the heating element 3, no external power source is required, which saves energy and prevents the heat from damaging the external power source during the heating process. The connecting holes 443 on the sides of the rod and ring connect the inside and outside of the rod and ring, and the interior of the rod and ring is connected to the first heat dissipation hole 5, allowing fluid to flow from the inside to the outside, accelerating the heat dissipation of the rod and ring, and thus accelerating the heat dissipation of the heating element 3.

[0034] In some embodiments, the hot press head further includes a temperature detection device for obtaining the operating temperature of the heating element 3 or the semiconductor workpiece. In some embodiments, the hot press head further includes a heat dissipation device, with a heat insulation block connected to the heat dissipation device.

[0035] Please see Figure 13 , Figure 13 This is a schematic flowchart of the temperature control method provided in an embodiment of this application. Figure 13 As shown, the temperature control method includes steps S100 to S300.

[0036] Step S100: Obtain the target temperature data and current processing time during the processing.

[0037] Step S200: Determine whether the semiconductor workpiece placed on the heating element of the hot press head should enter the heat dissipation stage based on the heat dissipation time point and processing time in the target temperature data.

[0038] The target temperature data, during the heat dissipation phase, has a target heat dissipation temperature curve with a slope within a preset range. The slope is measured in degrees Celsius per second. In subsequent calculations, only the slope value needs to be used, ignoring the unit.

[0039] Optionally, the slope of the target heat dissipation temperature curve can be the result of dividing the difference between the initial target heat dissipation temperature and the final target heat dissipation temperature by the total time of the heat dissipation stage.

[0040] Optionally, the target heat dissipation temperature curve consists of multiple data points, each representing a time point and the corresponding target processing temperature. The slope of the target heat dissipation temperature curve can be the average of the slopes corresponding to all time points in the target heat dissipation temperature curve. Optionally, the preset slope range is -1000 to -1. For example, the slope can be -1, -10, -100, -500, -800, or -1000, etc.

[0041] Please see Figure 14 , Figure 14 This is a schematic diagram of multiple processing temperature curves provided in the embodiments of this application. For example... Figure 14 As shown, the semiconductor workpiece has multiple processing stages including heating stage T1, isothermal stage T2, and heat dissipation stage T3.

[0042] In some implementations, a target temperature profile can be determined based on target temperature data. This target temperature profile represents the target processing temperature that the semiconductor workpiece should reach at each point in time.

[0043] like Figure 14 As shown, exemplarily, the segment of the target temperature curve during the heat dissipation stage T3 is the first target heat dissipation temperature curve L0. This application does not limit the target temperature curve; different semiconductor workpieces can correspond to different target temperature curves.

[0044] In some implementations, when the current processing time reaches the heat dissipation time point in the target temperature data, it is determined that the semiconductor workpiece should enter the heat dissipation stage.

[0045] Step S300: When it is determined that the semiconductor workpiece should enter the heat dissipation stage, the heat dissipation device of the hot press head is controlled to dissipate heat from the heating element based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0046] In some embodiments, the hot press head also includes a heat insulation block installed between the base of the hot press head and the heating element, the heat insulation block being used to insulate the heat from the heating element.

[0047] In some embodiments, the heat insulation block includes a fluid guiding portion, which includes a plurality of first heat dissipation holes for fluid to enter. Optionally, the fluid guiding portion may further include a fluid guiding groove and / or a fluid guiding column. The fluid guiding column may include the first column, second column, and third column as described above. In some embodiments, the fluid guiding portion includes a plurality of first heat dissipation holes for fluid to enter and a plurality of fluid guiding columns, the fluid guiding columns being disposed on the surface of the heat insulation block near the heating element, and the heat dissipation device being used to output fluid with a temperature lower than a first preset temperature to the first heat dissipation holes. Optionally, the first preset temperature is 0 degrees, -10 degrees, -30 degrees, -50 degrees, or -200 degrees, etc. In some embodiments, the number of first heat dissipation holes is 2, 3, or 4, etc., and the number of fluid guiding columns is 2, 3, 4, 6, 8, 9, or 10, etc. Optionally, the plurality of first heat dissipation holes are symmetrically arranged, and the plurality of fluid guiding columns are symmetrically arranged. Optionally, the diameter of the first heat dissipation hole is from 3 mm to 20 mm, for example, the diameter of the first heat dissipation hole is 3 mm, 5 mm, 7 mm, 10 mm or 20 mm, etc. Optionally, the height of the fluid guide column is from 3 mm to 20 mm, for example, the height of the fluid guide column is 3 mm, 5 mm, 8 mm, 10 mm or 20 mm, etc.

[0048] In some embodiments, the surface of the fluid guide post is provided with fluid guiding patterns, which are used to further and uniformly guide the fluid to the periphery of the heating element. Optionally, the fluid includes at least one of a gas and a liquid. In some embodiments, the gas is air, carbon dioxide, nitrogen, or helium, etc. In some embodiments, the liquid is liquid nitrogen or liquid helium, etc.

[0049] Preferably, the fluid guide column is used to guide the gas to the periphery of the heating element. In some embodiments, the fluid guide portion further includes a plurality of third heat dissipation holes and a liquid guide channel for introducing liquid. The liquid guide channel communicates with the third heat dissipation holes and is used to uniformly guide the liquid to the periphery of the heating element.

[0050] In some embodiments, the fluid guide further includes a plurality of third heat dissipation hole groups and a liquid guide channel communicating with each third heat dissipation hole group, each third heat dissipation hole group including at least one third heat dissipation hole. Optionally, each liquid guide channel has a different flow guiding method, and the plurality of liquid guide channels may be isolated from each other or partially connected.

[0051] In some embodiments, the heat dissipation device includes a first air pump for outputting gas from a gas reservoir at a temperature lower than a first preset temperature to a fluid guide section. In some embodiments, the heat dissipation device includes a second air pump and a vortex tube; the second air pump outputs compressed gas to the vortex tube, which then diverts the compressed gas to obtain gas at a temperature lower than the first preset temperature and outputs this gas to the fluid guide section. In some embodiments, the heat dissipation device includes a liquid pump and a liquid reservoir; the liquid pump outputs liquid from the liquid reservoir at a temperature lower than the first preset temperature to the fluid guide section. For example, the liquid pump outputs liquid to a third heat dissipation hole in the fluid guide section.

[0052] In some implementations, step S300 includes steps S310 to S320.

[0053] Step S310: When it is determined that the semiconductor workpiece should enter the heat dissipation stage, select one of the multiple heat dissipation modes based on the slope of the target heat dissipation temperature curve.

[0054] Among them, the multiple heat dissipation modes include at least a unified fluid heat dissipation mode, and the maximum heat dissipation speed or heat dissipation uniformity index of each heat dissipation mode is different.

[0055] Optionally, multiple heat dissipation modes include a unified fluid heat dissipation mode, a zoned fluid heat dissipation mode, a fluid and semiconductor refrigeration module collaborative heat dissipation mode, a fluid and heat sink collaborative heat dissipation mode, and a fluid, semiconductor refrigeration module and heat sink collaborative heat dissipation mode.

[0056] In a uniform fluid cooling mode, the fluid input to all first cooling holes has the same temperature and flow rate. In a zoned fluid cooling mode, the fluid input to different first cooling holes may have different temperatures and / or flow rates.

[0057] Optionally, the partitioned fluid cooling mode further includes a partitioned airflow cooling mode and a partitioned gas plus liquid cooling mode.

[0058] For example, the maximum heat dissipation speed is ordered from smallest to largest as follows: fluid heat dissipation mode, fluid and semiconductor refrigeration module collaborative heat dissipation mode, fluid and heat sink collaborative heat dissipation mode, and fluid, semiconductor refrigeration module and heat sink collaborative heat dissipation mode. Among them, the fluid heat dissipation mode includes unified fluid heat dissipation mode and zoned fluid heat dissipation mode.

[0059] For example, in the fluid cooling mode, the heat dissipation uniformity index of the partitioned fluid cooling mode is higher than that of the partitioned fluid cooling mode.

[0060] In some implementations, a target heat dissipation mode is selected from a variety of heat dissipation modes based on the slope of the target heat dissipation temperature curve, so that the processing temperature curve of the semiconductor workpiece matches the different target temperature curves.

[0061] Optionally, when it is determined that the semiconductor workpiece should enter the heat dissipation stage, the slope of the target heat dissipation temperature curve is calculated, and a target heat dissipation mode is selected from multiple heat dissipation modes based on the slope and the slope value range corresponding to multiple preset heat dissipation modes.

[0062] like Figure 14 As shown, by way of example, different heat dissipation modes can be used to obtain a first processing temperature curve L1, a second processing temperature curve L2, and a third processing temperature curve L3.

[0063] Optionally, different semiconductor components require different target thermal temperature profiles. Please refer to [link / reference]. Figure 5 , Figure 5 This is a schematic diagram of multiple target heat dissipation temperature curves and heat dissipation temperature curves corresponding to various heat dissipation modes provided in the embodiments of this application. For example... Figure 15 As shown, in the heat dissipation stage T3, the slope of the second target heat dissipation temperature curve L4 is -300, the slope of the third target heat dissipation temperature curve L5 is -30, and the slope of the fourth target heat dissipation temperature curve L6 is -20.

[0064] In some implementations, the heat dissipation temperature curve corresponding to the maximum heat dissipation temperature for each heat dissipation mode is determined in advance through experiments, and the slope range corresponding to each heat dissipation mode is determined based on the slope of the heat dissipation temperature curve corresponding to each heat dissipation mode. The slope range corresponding to each heat dissipation mode includes the slope of the heat dissipation temperature curve corresponding to the maximum heat dissipation temperature for that heat dissipation mode.

[0065] Optionally, the slope of the heat dissipation temperature curve corresponding to each heat dissipation mode can be the result of dividing the difference between the initial target heat dissipation temperature and the final target heat dissipation temperature of the heat dissipation temperature curve by the total time of the heat dissipation stage.

[0066] Optionally, the heat dissipation temperature curve consists of multiple data points, each representing a time point and the corresponding actual processing temperature. The slope of the heat dissipation temperature curve can be the average of the slopes of all data points corresponding to all time points in the curve.

[0067] For example, the slope of the first heat dissipation temperature curve L7 is -50, the slope of the second heat dissipation temperature curve L8 is -33.3, the slope of the third heat dissipation temperature curve L9 is -27.3, and the slope of the fourth heat dissipation temperature curve L10 is -23.

[0068] For example, the slope value of the first heat dissipation temperature curve L7 is in the range of -50 to -1, the slope value of the second heat dissipation temperature curve L8 is in the range of -33.3 to -1, the slope value of the third heat dissipation temperature curve L9 is in the range of -27.3 to -1, and the slope value of the fourth heat dissipation temperature curve L10 is in the range of -23 to -1.

[0069] For example, the first heat dissipation temperature curve L7 corresponds to the heat dissipation mode of fluid and semiconductor cooling module and heat sink, the second heat dissipation temperature curve L8 corresponds to the heat dissipation mode of fluid and heat sink, the third heat dissipation temperature curve L9 corresponds to the heat dissipation mode of fluid and semiconductor cooling module, and the fourth heat dissipation temperature curve L10 corresponds to the fluid heat dissipation mode.

[0070] In some implementations, when no heat dissipation mode has a slope range that includes the slope of the target heat dissipation temperature curve, the heat dissipation mode corresponding to the slope range closest to that slope is determined as the target heat dissipation mode. For example, if the slope of the second target heat dissipation temperature curve L4 is -300, and no heat dissipation mode has a slope range that includes -300, the heat dissipation mode corresponding to the slope range closest to -300 (-50 to -1) that involves the fluid co-cooling with the semiconductor cooling module and heat sink is determined as the target heat dissipation mode. In this way, the temperature of the semiconductor workpiece can be brought as close as possible to the target processing temperature.

[0071] In some implementations, when the slope range of the heat dissipation temperature curve corresponding to at least one heat dissipation mode includes the slope of the target heat dissipation temperature curve, the heat dissipation mode that includes the slope and has the highest lower limit of the slope range is determined as the target heat dissipation mode. For example, the slope of the third target heat dissipation temperature curve L5 is -30. The slope range of the first heat dissipation temperature curve L7 and the slope range of the second heat dissipation temperature curve L8 both include the slope of the first heat dissipation temperature curve L7. However, the lower limit of the slope range of the first heat dissipation temperature curve L7 is -50, and the lower limit of the slope range of the second heat dissipation temperature curve L8 is -33.3. The lower limit of the slope range of the second heat dissipation temperature curve L8 is the highest. Therefore, the fluid and heat sink co-heat dissipation mode corresponding to the second heat dissipation temperature curve L8 is determined as the target heat dissipation mode. The slope of the fourth target heat dissipation temperature curve L6 is -20. The slope values ​​of the first, second, third, and fourth heat dissipation temperature curves L7, L8, L9, and L10 all include the slope of the fourth target heat dissipation temperature curve L6. The lower limit of the slope value range corresponding to the fourth heat dissipation temperature curve L10 is the highest. Therefore, the fluid heat dissipation mode corresponding to the fourth heat dissipation temperature curve L10 is determined as the target heat dissipation mode. In this way, energy consumption can be reduced.

[0072] In some implementations, the slope value ranges corresponding to each heat dissipation mode do not overlap. When the slope of the target heat dissipation temperature curve is within one of the slope value ranges, the heat dissipation mode corresponding to that slope value range is determined as the target heat dissipation mode.

[0073] In some implementations, when the fluid cooling mode further includes a partitioned airflow cooling mode and a partitioned gas plus liquid cooling mode, the heat dissipation temperature curve corresponding to the maximum heat dissipation temperature of each fluid cooling mode is determined in advance through experiments. The slope range of the slope corresponding to each fluid cooling mode is determined according to the slope of the heat dissipation temperature curve. Then, a cooling mode is selected from the fluid cooling modes according to the slope of the target heat dissipation temperature curve. The method is described above.

[0074] Optionally, the lower limit of the slope value range corresponding to the partitioned gas plus liquid heat dissipation mode is lower than the lower limit of the slope value range corresponding to the partitioned airflow heat dissipation mode.

[0075] As mentioned above, different semiconductor components require different target heat dissipation temperature profiles. Optionally, the target heat dissipation temperature profile can be a straight line or a curve. The target heat dissipation temperature profile can be monotonically decreasing, first monotonically decreasing and then maintaining a slope of 0 before monotonically decreasing again, or first monotonically decreasing and then monotonically increasing and then monotonically decreasing again, etc. This application does not limit the shape of the target heat dissipation temperature profile.

[0076] Optionally, the target heat dissipation temperature curve may include multiple curve segments, and the slopes of the multiple curve segments may be different.

[0077] like Figure 15 As shown, exemplarily, the fifth heat dissipation temperature curve L11 includes a first curve segment L111, a second curve segment L112, and a third curve segment L113. The first curve segment L111 is monotonically decreasing, the second curve segment L112 has a slope of 0, and the third curve segment L113 is monotonically decreasing. The slopes of the first curve segment L111 and the third curve segment L113 are different.

[0078] In some implementations, when the target heat dissipation temperature curve includes multiple curve segments, the slope of each data point on the target heat dissipation temperature curve is calculated. Data points whose absolute value of the slope difference is less than a preset difference are clustered to identify multiple curve segments of the target heat dissipation temperature curve. For each curve segment, the average slope of all data points on the curve segment is taken as the slope corresponding to that curve segment, and a target heat dissipation mode is selected from multiple heat dissipation modes based on the slope corresponding to that curve segment, as described above. Specifically, when the target heat dissipation temperature curve includes multiple curve segments, when transitioning from the time period corresponding to one curve segment to the time period corresponding to the next curve segment, a new target heat dissipation mode is selected from multiple heat dissipation modes based on the slope corresponding to the next curve segment; that is, the target heat dissipation mode can be switched.

[0079] In some implementations, when the slope of the curve segment is 0, heat dissipation from the heating element can be paused.

[0080] For example, during the time period corresponding to the first curve segment L111, the fluid-based cooling mode corresponding to the first heat dissipation temperature curve L7, which involves the coordinated cooling of the fluid and the semiconductor cooling module and the heat sink, can be selected as the target heat dissipation mode. During the time period corresponding to the second curve segment L112, heat dissipation of the heat sink can be paused. During the time period corresponding to the second curve segment L113, the fluid cooling mode corresponding to the fourth heat dissipation temperature curve L10 can be selected as the target heat dissipation mode.

[0081] Step S320: Based on the target heat dissipation mode, target temperature data, and the temperature of the semiconductor workpiece detected by the temperature detection device, the heat dissipation device of the heat-control hot press head dissipates heat from the heating element so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0082] In some embodiments, the fluid introduced through the multiple first heat dissipation holes may have the same temperature. In this case, step S320 includes steps S321 to S322.

[0083] Step S321: When the target heat dissipation mode is the unified fluid heat dissipation mode, calculate the first temperature and the first flow rate of the fluid based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device.

[0084] The first temperature is lower than the first preset temperature.

[0085] In some implementations, a proportional-integral-derivative (PID) control method is used to calculate the first temperature and first flow rate of the fluid based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device.

[0086] In some implementations, the formula for calculating the first temperature of the fluid is:

[0087] ,

[0088] in, Indicates the first temperature. This indicates the first preset temperature. The temperature proportionality coefficient is determined based on the thermal conductivity of the semiconductor workpiece material. Indicates the current processing time. This indicates the current real-time temperature deviation. This is the real-time temperature deviation between the target processing temperature corresponding to the current processing time in the target temperature data and the temperature of the semiconductor workpiece detected by the current temperature detection device. Represents the temperature integral coefficient. Indicates the integrating factor. This represents the temperature differential coefficient.

[0089] Optionally, Used to eliminate steady-state temperature differences. Used for rapid response to sudden temperature changes.

[0090] In some implementations, the formula for calculating the first flow velocity of the fluid is:

[0091] ,

[0092] in, Indicates the first flow velocity. This represents the initial value of the first flow velocity. This represents the flow velocity proportionality coefficient. Represents the integral coefficient of flow velocity. This represents the differential coefficient of the flow velocity.

[0093] Optionally, Used to eliminate steady-state temperature differences. This is used for situations requiring rapid response to sudden temperature changes.

[0094] Optionally, based on the total cross-sectional area of ​​the heat dissipation holes in the heat insulation block and the time when entering the heat dissipation stage... Determining the initial value .

[0095] In some implementations, the coefficients in the calculation formulas for the first temperature and the first flow rate are preset. By presetting different combinations of coefficients, the first temperature and the first flow rate can be calculated simultaneously, or one variable can be kept constant while only the value of the other variable is calculated.

[0096] Step S322: Control the heat dissipation device to output fluid at a first temperature and a first flow rate to the fluid guide section of the heat insulation block of the hot press head to dissipate heat from the heating element, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0097] In some embodiments, the temperature and flow rate of the fluid output from each first heat dissipation hole can be individually set according to the positions of the multiple fluid guide columns to improve the uniformity of heat dissipation. In this case, step S320 includes steps S323 to S324.

[0098] Step S323: When the target heat dissipation mode is the partitioned fluid heat dissipation mode, calculate the second temperature and second flow rate of the fluid output from each first heat dissipation hole based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device.

[0099] The second temperature is lower than the first preset temperature.

[0100] In some implementations, step S323 includes steps S3231 to S3233.

[0101] Step S3231: Obtain the position coordinates of each fluid guide post and the position coordinates of each first heat dissipation hole.

[0102] Step S3232: Calculate the distance between each fluid guide post and each first heat dissipation hole based on the position coordinates of each fluid guide post and the position coordinates of each first heat dissipation hole, and calculate the influence weight of each fluid guide post on each first heat dissipation hole using the first preset calculation method.

[0103] In some implementations, the formula for calculating the influence weight of the fluid guide post on each first heat dissipation hole is as follows:

[0104] ,

[0105] in, Indicates the first The fluid guide post for the first The influence weight of the first heat dissipation hole Indicates the first calculated coefficient. This represents the second calculation coefficient. Indicates the third calculation coefficient. The base of the natural logarithm. Indicates based on the first The first fluid guide post and the first The position coordinates of the first heat dissipation hole are determined. The fluid guide post and the first The distance between the first heat dissipation holes This indicates the critical distance at which the fluid guide post affects the fluid. , , and All are preset values.

[0106] Optionally, A multiple of the diameter of the fluid guide post, for example It is 1.5 times, 2 times, or 3 times the diameter of the fluid guide column, etc.

[0107] Step S3233: Using the second preset calculation method, calculate the second temperature and second flow rate of the fluid output from each first heat dissipation hole based on the influence weight of each fluid guide column on each first heat dissipation hole, the target temperature data, and the temperature of the semiconductor workpiece detected by the temperature detection device.

[0108] In some implementations, the formula for calculating the second temperature is:

[0109] ,

[0110] in, Indicates the first The second temperature of the fluid output from the first heat dissipation hole, Indicates the first preset temperature. This represents the fourth calculation coefficient. This indicates the total number of fluid guide pillars. Indicates the first Temperature calculation function corresponding to each fluid guide column.

[0111] Optionally, The calculation formula for the first temperature can be referenced from the formula for the second temperature. For example, .

[0112] For example, In the calculation formula, The calculation formula is:

[0113] ,

[0114] in, Indicates the first The fifth calculation coefficient corresponding to the first heat dissipation hole Indicates the first The fifth calculation coefficient corresponding to the first heat dissipation hole This represents the cooperative control coefficient of adjacent first heat dissipation holes. This indicates the total number of the first heat dissipation holes. This indicates the target processing temperature corresponding to the current processing time in the target temperature data at the current processing time, and the target processing temperature at the current processing time. Real-time temperature deviation of the temperature of the first heat dissipation hole This indicates the target processing temperature corresponding to the current processing time in the target temperature data at the current processing time, and the target processing temperature at the current processing time. The real-time temperature deviation of the temperature of the first heat dissipation hole.

[0115] In some implementations, the formula for calculating the second flow velocity is:

[0116] ,

[0117] in, Indicates the first The second flow rate of the fluid output from the first heat dissipation hole, Indicates the initial flow velocity of the fluid. This represents the sixth calculation coefficient. Indicates the first The flow velocity calculation function corresponding to each fluid guide column.

[0118] Optionally, The calculation formula can refer to the calculation formula for the first flow velocity. For example, ,in, The calculation formula can be referred to In the calculation formula The calculation formula.

[0119] In some implementations, the coefficients in the calculation formulas for the second temperature and the second flow rate are preset. By presetting different combinations of coefficients, the second temperature and the second flow rate can be calculated simultaneously, or one variable can be kept constant while only the value of the other variable is calculated.

[0120] In some embodiments, since the fluid absorbs heat from the outside air at the edge of the insulation block, the area where multiple first heat dissipation holes are located can be divided into at least two heat dissipation zones, including a central zone and an edge zone. The heat dissipation zone of each first heat dissipation hole can be determined based on its position coordinates and the range of a preset heat dissipation zone. Furthermore, the second temperature and second flow rate of the fluid output from each first heat dissipation hole are calculated based on the influence weight of each fluid guide column on each first heat dissipation hole, target temperature data, the temperature of the semiconductor workpiece detected by the temperature detection device, and the heat dissipation zone of each first heat dissipation hole. This approach further improves the uniformity of heat dissipation.

[0121] Alternatively, the formula for calculating the second temperature is:

[0122] ,

[0123] in, This represents the temperature-distance effect function. This represents the first influence function. Indicates the first The coordinates of the first heat dissipation hole on the first coordinate axis on the surface of the heat insulation block. Indicates the first The coordinates of the standard temperature calculation point of the heat dissipation area corresponding to the first heat dissipation hole on the first coordinate axis. Indicates the first The coordinates of the first heat dissipation hole on the second coordinate axis on the surface of the heat insulation block. Indicates the first The coordinates of the standard temperature calculation point of the heat dissipation area corresponding to the first heat dissipation hole on the second coordinate axis.

[0124] Optionally, in In the meantime, based on the current processing time, Calculation of temperature difference with the current air temperature The value of .

[0125] Optionally, The value is Multiply the temperature difference with the current air temperature by the first influence coefficient.

[0126] Optionally, The value is the preset value.

[0127] Optionally, the formula for calculating the second flow velocity is:

[0128] ,

[0129] in, This represents the flow velocity-distance effect function. This represents the second influence function.

[0130] Alternatively, depending on the current processing time, Calculation of temperature difference with the current air temperature The value of .

[0131] Optionally, The value is Multiply the temperature difference with the current air temperature by the first influence coefficient.

[0132] Optionally, when simultaneously calculating the second temperature and the second flow rate, based on the current processing time, , Calculation of temperature difference with the current air temperature The value of .

[0133] Optionally, The value is The temperature difference with the current air temperature multiplied by the first influence coefficient plus The corresponding weight coefficient multiplied The value of .

[0134] Optionally, The value is the preset value.

[0135] Step S324: Control the heat dissipation device to output fluid with the second temperature and the second flow rate corresponding to the first heat dissipation hole to each first heat dissipation hole to dissipate heat from the heating element, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0136] In some embodiments, when the fluid heat dissipation mode further includes a partitioned airflow heat dissipation mode and a partitioned gas plus liquid heat dissipation mode, and the target heat dissipation mode is a partitioned airflow heat dissipation mode, step S324 includes: controlling the heat dissipation device to output gas with a second temperature and a second flow rate corresponding to the first heat dissipation hole to each first heat dissipation hole to dissipate heat from the heating element, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0137] In some implementations, when the target heat dissipation mode is a partitioned gas plus liquid heat dissipation mode, step S324 includes: controlling the heat dissipation device to output gas with a second temperature and a second flow rate corresponding to each first heat dissipation hole, and outputting liquid with a fourth temperature and a fourth flow rate corresponding to each third heat dissipation hole to dissipate heat from the heating element, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0138] In some implementations, the method for calculating the fourth temperature is the same as the method for calculating the second temperature, and the method for calculating the second flow rate is the same as the method for calculating the fourth flow rate. When the target heat dissipation mode is a zoned gas plus liquid heat dissipation mode, the coefficients in the calculation formula can be adjusted accordingly.

[0139] In some implementations, the heat dissipation uniformity index requirement of the semiconductor workpiece is obtained. Based on the heat dissipation uniformity index requirement and the degree to which the guiding method of each liquid guide channel, determined in advance through experiments, improves the heat dissipation uniformity index, one or more target liquid guide channels are selected to guide the liquid. The heat dissipation device is then controlled to output liquid to the third heat dissipation hole in the third heat dissipation hole group that connects all the target liquid guide channels. This method improves heat dissipation uniformity.

[0140] In some embodiments, to improve the heat dissipation rate of the semiconductor workpiece, the heat insulation block of the hot press head includes a semiconductor cooling module, which absorbs heat from the semiconductor workpiece when energized. The semiconductor cooling module achieves cooling through the Peltier effect and features vibration-free operation, no refrigerant required, real-time temperature control, and a controllable temperature difference range. When direct current passes through a thermocouple composed of two different semiconductor materials connected in series, heat can be absorbed and released at the two ends of the thermocouple, respectively, thus achieving cooling.

[0141] In some embodiments, the cooling end of the semiconductor cooling module is located near the heat-insulating block on the side close to the heating element. The semiconductor cooling module includes a fourth through-hole corresponding to either the first or third heat dissipation hole. When fluid flows through the fourth through-hole to the first heat dissipation hole, the semiconductor cooling module can further cool the fluid. The semiconductor cooling module can also absorb heat from the semiconductor workpiece through the heat-insulating block. This method accelerates heat dissipation.

[0142] In some implementations, step S320 includes steps S325 to S326.

[0143] Step S325: When the target heat dissipation mode is the fluid and semiconductor cooling module coordinated heat dissipation mode, calculate the first current of the semiconductor cooling module based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device.

[0144] In some implementations, a PID control method is used to calculate the first current, and the calculation formula can refer to the calculation formula for the first temperature.

[0145] In some embodiments, the semiconductor cooling module includes multiple cooling units, each cooling unit including a fourth through-hole corresponding to at least one first heat dissipation hole. Optionally, the second current of each cooling unit can be controlled individually to control the temperature of the cooling unit individually, thereby enabling further rapid and uniform heat dissipation. In this case, the formula for calculating the first current of the cooling unit is:

[0146] ,

[0147] in, Indicates the first current. This represents the basic calculation formula for the first current determined using the PID control method. This represents the initial value of the first current. This represents the correction function for temperature distribution uniformity.

[0148] Optionally, ,in, This represents the first correction factor. This represents the second correction factor. This represents the third correction factor. This represents the fourth correction factor. , , and All are preset values, and It is a positive number. This represents the average temperature gradient of a local surface of a semiconductor workpiece.

[0149] Optionally, a multi-point temperature sensor array in the temperature detection device is used to acquire the surface temperature data of the semiconductor workpiece, and then the corresponding average local surface temperature gradient of the semiconductor workpiece is calculated based on the surface temperature data of the semiconductor workpiece within a preset neighborhood range of all fourth through holes corresponding to each cooling unit.

[0150] In some implementations, step S325 may further include step S321 or step S323.

[0151] Step S326: Control the heat dissipation device to output fluid with a temperature lower than the first preset temperature to the fluid guide section of the heat insulation block of the hot press head, and output the first current to the semiconductor cooling module to dissipate heat from the heating element, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0152] In some implementations, the second current of each cooling unit and the second temperature and second flow rate of the fluid output from each first heat dissipation hole can be controlled individually, as described above.

[0153] In some embodiments, the heat insulation block includes a groove for inserting the heat sink, and the heat dissipation device includes the heat sink, a moving device, and a cooling device, wherein the cooling device is used to reduce the temperature of the heat sink. In this case, step S320 includes steps S327 to S3291.

[0154] Step S327: When the target heat dissipation mode is the fluid and heat dissipation block cooperative heat dissipation mode, control the heat dissipation device to output fluid with a temperature lower than the first preset temperature to the fluid guide part of the heat insulation block of the heat pressure head.

[0155] The content of step S327 refers to the content of steps S321 to S322 or steps S323 to S324.

[0156] Step S328: Calculate the third temperature based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device.

[0157] Optionally, a PID control method is used to calculate the third temperature, referring to the method used to calculate the first temperature. Specifically, the calculation coefficients for the third temperature are adjusted based on the thermal conductivity of the heating element and the coefficients in the formulas for calculating the first temperature and the first flow rate.

[0158] Step S329: Control the moving device to move the heat sink into the cooling device to reduce the temperature of the heat sink, so that the temperature of the heat sink is the third temperature.

[0159] In some embodiments, the heat sink is made of metal, graphene, or thermally conductive silicone grease, etc. The air temperature in the cooling device is lower than the third temperature. In some embodiments, the heat sink is made of magnetocaloric material. By changing the strength of an external magnetic field, the magnetocaloric material can be directly induced to absorb or release heat. In this case, the cooling device is a magnetic field device used to generate a magnetic field. The magnetic field device is controlled to generate a magnetic field, and a moving device is controlled to move the heat sink into the magnetic field to reduce the temperature of the heat sink.

[0160] Optionally, the heat sink also includes a fifth through hole corresponding to the first or third heat dissipation hole of the heat insulation block, so that fluid can flow to the heat insulation block through the first or third heat dissipation hole. When the heat sink is made of a magnetocaloric material, the cooling device does not need to lower the air temperature, but only needs to generate a magnetic field that acts directly on the heat sink. Therefore, the temperature of the heat sink can be precisely controlled by controlling the magnetic field strength, which in turn facilitates precise control of the temperature of the semiconductor workpiece.

[0161] Step S3291: When the temperature of the heat sink is detected to be the third temperature, the control moving device moves the heat sink into the groove of the heat insulation block so that the heat sink absorbs the heat of the semiconductor workpiece, thereby making the temperature of the semiconductor workpiece approach the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

[0162] In some implementations, when it is determined from the heat dissipation time point and processing time in the target temperature data that there is still a first preset time before the semiconductor workpiece placed on the heating element of the hot press head enters the heat dissipation stage, steps S328 to S329 are executed. When the semiconductor workpiece should enter the heat dissipation stage, step S3291 is executed first, and then the heat dissipation device is controlled to output fluid with a temperature lower than the first preset temperature to the fluid guide part of the heat insulation block of the hot press head, thereby accelerating the heat dissipation speed.

[0163] The methods of heat dissipation using fluid, semiconductor cooling modules, and heat sinks described above can be used individually or in combination. When multiple heat dissipation methods are used in combination, the calculation methods for fluid temperature and flow rate can be adjusted.

[0164] like Figure 14 As shown, exemplarily, when the slope of the first target heat dissipation temperature curve L0 is within a first preset value range, a fluid and semiconductor cooling module collaborative heat dissipation mode is selected to dissipate heat from the semiconductor workpiece. The curve segment of the first processing temperature curve L1 corresponding to heat dissipation stage T3 is the heat dissipation temperature curve obtained using the fluid and semiconductor cooling module and heat sink collaborative heat dissipation mode. The curve segment of the second processing temperature curve L2 corresponding to heat dissipation stage T3 is the heat dissipation temperature curve obtained using the first temperature control method in the prior art. The curve segment of the third processing temperature curve L3 corresponding to heat dissipation stage T3 is the heat dissipation temperature curve obtained using the second temperature control method in the prior art. From Figure 4 It can be seen that the heat dissipation temperature curve obtained by using the fluid and semiconductor cooling module and heat sink synergistic heat dissipation mode provided in this application has a faster heat dissipation speed and is closer to the first target heat dissipation temperature curve L0, and the heat dissipation effect is significantly better than the prior art.

[0165] In some embodiments, the temperature control method further includes step S400.

[0166] Step S400: When the semiconductor workpiece has been placed on the heating element and it is detected that the semiconductor workpiece is in contact with the substrate, the heating element is heated by the heating device based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heating stage in the target temperature data.

[0167] In some implementations, step S400 is performed after step S100 and before step S200.

[0168] In some embodiments, after step S400 and before step S200, the temperature control method further includes: a temperature control heating device performing constant temperature heating control on a heating element based on target temperature data and the temperature of the semiconductor workpiece detected by a temperature detection device, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the constant temperature stage in the target temperature data.

[0169] In some embodiments, the electronic device includes one or more processors and a memory. The processor and the memory can be connected via a bus or other means. The processor is used to execute the temperature control method described above. The memory, as a non-volatile computer-readable storage medium, can be used to store non-volatile software programs, non-volatile computer-executable programs, and modules, such as the program instructions / modules of the temperature control method in the embodiments of this application. The processor executes various functional applications and data processing of the electronic device by running the non-volatile software programs, instructions, and modules stored in the memory, thereby implementing the temperature control method of the above-described method embodiments.

[0170] In some embodiments, the electronic device may be a hot press head or a control device for a hot press head as described above.

[0171] In some embodiments, a computer-readable storage medium stores program code that can be called by a processor to execute the temperature control method described in the above method embodiments.

[0172] In summary, this application provides a temperature control method and an electronic device. The temperature control method includes: acquiring target temperature data of the processing process and the current processing time of the hot press head; determining whether a semiconductor workpiece placed on the heating element of the hot press head should enter the heat dissipation stage based on the heat dissipation time point in the target temperature data and the processing time; wherein the slope of the target heat dissipation temperature curve of the target temperature data in the heat dissipation stage is within a preset slope range; when it is determined that the semiconductor workpiece should enter the heat dissipation stage, controlling the heat dissipation device of the hot press head to dissipate heat from the heating element based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data. This application utilizes the target temperature data to determine the slope of the target heat dissipation temperature curve during the heat dissipation stage. When it is determined that the semiconductor workpiece should enter the heat dissipation stage, the heat dissipation device of the hot press head is controlled to dissipate heat from the heating element based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device. This allows the temperature of the semiconductor workpiece to approach the target processing temperature corresponding to the heat dissipation stage in the target temperature data. When the absolute value of the slope of the target heat dissipation temperature curve is large, the heat dissipation speed can be increased based on the target temperature data to rapidly dissipate heat from the semiconductor workpiece, thereby allowing the temperature of the semiconductor workpiece to approach the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

Claims

1. A temperature control method, characterized in that, include: Acquire the target temperature data and the current processing time of the hot press head during the processing; Based on the heat dissipation time point in the target temperature data and the processing time, it is determined whether the semiconductor workpiece placed on the heating element of the hot press head should enter the heat dissipation stage; wherein, the slope of the target heat dissipation temperature curve in the heat dissipation stage is within a preset slope range. When it is determined that the semiconductor workpiece should enter the heat dissipation stage, a target heat dissipation mode is selected from a variety of heat dissipation modes based on the slope of the target heat dissipation temperature curve. The variety of heat dissipation modes includes at least a unified fluid heat dissipation mode, and the maximum heat dissipation rate or heat dissipation uniformity index of each heat dissipation mode is different. Based on the target heat dissipation mode, the target temperature data, and the temperature of the semiconductor workpiece detected by the temperature detection device, the heat dissipation device of the hot press head dissipates heat from the heating element so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data. The heat insulation block of the hot press head includes a fluid guide section, which includes multiple first heat dissipation holes for fluid to enter and multiple fluid guide columns. When the target heat dissipation mode is a partitioned fluid heat dissipation mode, the position coordinates of each fluid guide column and the position coordinates of each first heat dissipation hole are obtained. The distance between each fluid guide post and each first heat dissipation hole is calculated based on the position coordinates of each fluid guide post and the position coordinates of each first heat dissipation hole, and the influence weight of each fluid guide post on each first heat dissipation hole is calculated using a first preset calculation method. The second preset calculation method is used to calculate the second temperature and second flow rate of the fluid output from each first heat dissipation hole based on the influence weight of each fluid guide column on each first heat dissipation hole, the target temperature data, and the temperature of the semiconductor workpiece detected by the temperature detection device. The heat dissipation device is controlled to output fluid with a second temperature and a second flow rate corresponding to each of the first heat dissipation holes to dissipate heat from the heating element, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

2. The temperature control method according to claim 1, characterized in that, The hot press head also includes a heat insulation block, which is installed between the base of the hot press head and the heating element. The heat insulation block is used to isolate the heat of the heating element. The heat insulation block includes a fluid guiding section, which includes a plurality of first heat dissipation holes for introducing fluid and a plurality of fluid guiding columns. The fluid guiding columns are disposed on the surface of the heat insulation block near the heating element. The heat dissipation device is used to output fluid with a temperature lower than a first preset temperature to the first heat dissipation holes.

3. The temperature control method according to claim 1, characterized in that, The method further includes: When the semiconductor workpiece is placed on the heating element and contact between the semiconductor workpiece and the substrate is detected, the heating device controls the heating element to heat the semiconductor workpiece based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heating stage in the target temperature data.

4. The temperature control method according to claim 1, characterized in that, When it is determined that the semiconductor workpiece should enter the heat dissipation stage, a target heat dissipation mode is selected from multiple heat dissipation modes based on the slope of the target heat dissipation temperature curve, including: When it is determined that the semiconductor workpiece should enter the heat dissipation stage, the slope of the target heat dissipation temperature curve is calculated, and a target heat dissipation mode is selected from multiple heat dissipation modes based on the slope and the slope value range corresponding to multiple preset heat dissipation modes.

5. The temperature control method according to claim 1, characterized in that, The heat dissipation device of the hot press head, which controls the temperature of the semiconductor workpiece based on the target heat dissipation mode, the target temperature data, and the temperature of the semiconductor workpiece detected by the temperature detection device, dissipates heat from the heating element so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data, including: When the target heat dissipation mode is a unified fluid heat dissipation mode, the first temperature and the first flow rate of the fluid are calculated based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device, wherein the first temperature is lower than the first preset temperature. The heat dissipation device is controlled to output fluid at the first temperature and the first flow rate to the fluid guide section of the heat insulation block of the hot press head to dissipate heat from the heating element, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

6. The temperature control method according to claim 1, characterized in that, The heat insulation block of the hot press head includes a semiconductor cooling module, which is used to absorb heat from the semiconductor workpiece when energized. The heat dissipation device of the hot press head, which controls the temperature of the semiconductor workpiece based on the target heat dissipation mode, the target temperature data, and the temperature of the semiconductor workpiece detected by the temperature detection device, dissipates heat from the heating element so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data, including: When the target heat dissipation mode is a fluid and semiconductor refrigeration module coordinated heat dissipation mode, the first current of the semiconductor refrigeration module is calculated based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device. The heat dissipation device is controlled to output fluid with a temperature lower than the first preset temperature to the fluid guide section of the heat insulation block of the hot press head, and the first current is output to the semiconductor cooling module to dissipate heat from the heating element, so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

7. The temperature control method according to claim 1, characterized in that, The heat insulation block of the hot press head includes a groove for inserting the heat sink block. The heat dissipation device includes a heat sink block, a moving device, and a cooling device, wherein the cooling device is used to reduce the temperature of the heat sink block. The heat dissipation device of the hot press head, which controls the temperature of the semiconductor workpiece based on the target heat dissipation mode, the target temperature data, and the temperature of the semiconductor workpiece detected by the temperature detection device, dissipates heat from the heating element so that the temperature of the semiconductor workpiece approaches the target processing temperature corresponding to the heat dissipation stage in the target temperature data, including: When the target heat dissipation mode is the fluid and heat dissipation block cooperative heat dissipation mode, the heat dissipation device is controlled to output fluid with a temperature lower than the first preset temperature to the fluid guide part of the heat insulation block of the heat pressure head; The third temperature is calculated based on the target temperature data and the temperature of the semiconductor workpiece detected by the temperature detection device. The moving device is controlled to move the heat sink into the cooling device to reduce the temperature of the heat sink, so that the temperature of the heat sink is at a third temperature. When the temperature of the heat sink is detected to be the third temperature, the moving device is controlled to move the heat sink into the groove of the heat insulation block so that the heat sink absorbs the heat of the semiconductor workpiece, thereby making the temperature of the semiconductor workpiece approach the target processing temperature corresponding to the heat dissipation stage in the target temperature data.

8. An electronic device, characterized in that, The electronic device includes: At least one processor; and, A memory communicatively connected to the at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor to enable the at least one processor to perform the temperature control method as described in any one of claims 1 to 7.

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