Flip chip LED and method for manufacturing the same

Abstract

The application provides a flip LED chip and a preparation method thereof. The electrode structure of the flip chip comprises a connection metal layer, a passivation layer, a protection metal layer and a eutectic metal layer which are stacked in sequence. The passivation layer completely covers the surface of the LED chip, effectively blocking the contact path of water vapor, particles and the like in the external environment and the chip. The passivation layer and the protection metal layer cooperate with each other to form complete isolation of the chip, effectively avoiding the chip being scratched by the particles and metal protrusions on the substrate. Meanwhile, the area of the protection metal layer is larger than that of the eutectic metal layer and the protection metal layer covers the through hole of the passivation layer, and the edge of the protection metal layer exceeds the edge of the eutectic metal layer. When the LED chip is welded to the substrate, the protection metal layer remains solid at the typical process temperature of eutectic welding and does not melt and liquefy, which can effectively block the liquefied eutectic metal from flowing into the chip, and avoid the electrical problems such as leakage and short circuit of the metal in the chip.

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