Semiconductor wastewater treatment process flow

Abstract

The application relates to a semiconductor wastewater treatment process, and belongs to the technical field of wastewater treatment. The application realizes efficient removal of heavy metals, fluorides and organic matters through multistage treatment. The process comprises the following steps: S1, pretreatment, wastewater is intercepted through a 5mm aperture grid, and is homogenized in a regulating tank for 4-6h; S2, adsorption treatment, a nitrogen-doped metal oxide composite adsorbent is used, and the adsorbent is stirred at 200-300r / min for 4-6h to adsorb pollutants, the adsorbent is prepared by compounding nickel nitrate hexahydrate and ferric chloride through ammonia-nitrogen mixed gas pore forming, and compounding copper nitrate, cerium nitrate and oxalic acid and roasting to obtain a porous structure; S3, membrane separation, polyamide composite nanofiltration membranes are used to intercept residual pollutants. Through optimization of the pore structure of the adsorbent and the synergistic effect of metal components, the removal rate of Cu 2+ , F ‑ and other pollutants is significantly improved.

Description

Technical Field

[0001] This invention belongs to the field of wastewater treatment technology and relates to a semiconductor wastewater treatment process. Background Technology

[0002] The semiconductor industry generates complex wastewater during production, typically containing heavy metal ions (such as copper, nickel, and arsenic), fluorides, organic solvents (such as isopropanol and ethylene glycol), and various acids and alkalis, characterized by high toxicity and difficulty in degradation. Traditional treatment methods, such as chemical precipitation, easily produce heavy metal-containing sludge, posing a risk of secondary pollution; activated carbon adsorption is inefficient at removing low concentrations of pollutants and has high regeneration costs; while single membrane separation technologies are prone to decreased membrane flux due to organic contamination. Especially for the challenge of synergistic removal of heavy metals and organic pollutants simultaneously present in semiconductor wastewater, existing technologies often employ multi-stage series processes, resulting in lengthy processes, high energy consumption, and unstable treatment effects. In recent years, metal-based adsorbents have attracted attention due to their strong selective adsorption capacity; however, traditional iron-based or aluminum-based adsorbents are prone to leaching and inactivation under acidic conditions, cannot adapt to fluctuations in wastewater pH, and have insufficient capacity for simultaneous removal of fluoride ions and small-molecule organic matter. Furthermore, while nanoscale adsorbents possess high specific surface areas, they are prone to aggregation, leading to masking of active sites and significant decline in dynamic adsorption efficiency. Existing nanofiltration membrane systems are prone to pore blockage by large organic molecules when no efficient pretreatment is performed, and frequent cleaning severely restricts the continuity of the process.

[0003] Therefore, there is an urgent need to develop a synergistic process that integrates efficient adsorption and deep membrane separation. Through the structural design of functionalized adsorbents, the simultaneous removal of complex pollutants and the long-term stable operation of the membrane system can be achieved, while also meeting the economic requirements of industrial applications. Summary of the Invention

[0004] The purpose of this invention is to provide a semiconductor wastewater treatment process, which features a high pollutant removal rate in semiconductor wastewater.

[0005] The objective of this invention can be achieved through the following technical solutions:

[0006] A semiconductor wastewater treatment process flow, the specific steps of which are as follows:

[0007] S1: The wastewater is first intercepted by a screen and then introduced into an equalization tank for homogenization treatment for 4-6 hours.

[0008] S2: Pass the homogenized wastewater into a sedimentation tank, add adsorbent, stir at a speed of 200~300r / min for 4~6h, and then filter;

[0009] The adsorbent in this invention is prepared by mixing nickel nitrate hexahydrate, ferric chloride, copper nitrate and cerium nitrate, and forms a nitrogen-doped metal oxide composite porous structure by introducing a mixture of ammonia nitrogen gas and adding oxalic acid.

[0010] S3: The filtered waste liquid is separated using a nanofiltration membrane to complete the waste liquid treatment process.

[0011] Furthermore, the preparation process of the adsorbent in S2 is as follows:

[0012] S2.1: Disperse nickel nitrate hexahydrate in an aqueous alcohol solution and stir at 150 r / min for 0.5 h to obtain a mixed solution A with a mass fraction of 40~50%;

[0013] S2.2: Add ferric chloride to mixed solution A, with a mass ratio of ferric chloride to nickel nitrate hexahydrate of 1:(1~2). Stir continuously and increase the speed to 200 r / min. While stirring, raise the temperature to 40~50℃. After maintaining the temperature, stir for 0.5 h to obtain mixed solution B.

[0014] S2.3: Transfer the mixed solution to a sealed reaction vessel and introduce ammonia-nitrogen mixed gas into the reaction vessel. After introducing the gas for 0.5 h, raise the temperature from room temperature to 250 °C at a rate of 5 °C / min. Maintain the temperature at this temperature for 2 h and then raise the temperature to 500 °C at a rate of 10 °C / min for 4 h. After the reaction is complete, cool to room temperature under a nitrogen atmosphere, filter, wash with deionized water, and dry at 80 °C for 12 h to obtain solid product C.

[0015] S2.4: Mix solid product C with copper nitrate and cerium nitrate in a mass ratio of 3:(1~3):1, grind in a ball mill at a speed of 400 r / min for 1 h, then add 1 wt% oxalic acid and 0.5 wt% dispersant, increase the speed to 600 r / min and continue stirring for 1 h to obtain mixture D;

[0016] S2.5: The mixture D is heated from room temperature to 350~450℃ and calcined for 4~6 hours. The solid obtained after calcination is pulverized and ground to obtain the adsorbent.

[0017] Furthermore, the aperture of the grille in S1 is 5mm.

[0018] Furthermore, the homogenization parameters in the equalization tank in S1 are as follows: stirring rate of 50~80 r / min, pH of 7~8, and temperature of 25~30℃.

[0019] Furthermore, the nanofiltration membrane in S3 is a polyamide composite membrane with a pore size of 0.5~2nm and a molecular weight cutoff of 200~1000Da.

[0020] Furthermore, the aqueous alcohol solution in S2.1 is a mixed solution of water and ethanol with a volume ratio of 1:(1~3).

[0021] Furthermore, in step S2.3, the gas volume percentage of the ammonia-nitrogen mixture is 10% NH3 + 90% N2, and the flow rate of the ammonia-nitrogen mixture is 20 m / s.

[0022] Furthermore, the dispersant in S2.4 is polyethylene glycol, with a number-average molecular weight range of 2000~4000.

[0023] Furthermore, the adsorbent obtained by grinding in step S2.5 has a particle size of 500 mesh.

[0024] The semiconductor wastewater treatment process provided by this invention achieves efficient removal of heavy metal ions, fluorides and organic pollutants from wastewater through adsorbents, while optimizing the synergistic effect of each link in the overall process to ensure stable treatment effect and controllable cost.

[0025] In the preparation of the adsorbent, this invention uses nickel nitrate hexahydrate and ferric chloride in a mass ratio of 1:(1~2) to form a nickel-iron bimetallic hydroxide precursor at 40~50℃ and a stirring speed of 200r / min. The key to this step is controlling the hydrolysis rate of metal ions. The mixed solvent of ethanol and water can adjust the polarity of the reaction system and inhibit the excessive growth of hydroxide particles, thereby forming a nanosheet structure with a high specific surface area. When ammonia-nitrogen mixed gas is subsequently introduced for hydrothermal reaction, ammonia not only acts as a mineralizing agent to promote the transformation of the precursor into a crystal structure, but its nitrogen-containing functional groups can also coordinate with metal ions, introducing abundant amino active sites on the material surface. Segmented heating removes physically bound water and structural hydroxyl groups through gradient heating, gradually constructing a stable porous framework structure: at 250℃, a mesoporous network mainly composed of nickel-iron oxides is formed, while at a high temperature of 500℃, some metal oxides undergo lattice reconstruction, forming a copper-cerium oxide composite structure with oxygen vacancies. In this process, the introduction of cerium nitrate promotes the formation of cerium oxide (CeO2) nanocrystals, whose unique CeO2... 3+ / Ce 4+ Redox pairs can catalytically degrade organic pollutants in wastewater treatment by releasing and capturing lattice oxygen; while CuO loading enhances the Lewis acidity of the surface and improves adsorption selectivity through strong coordination with pollutants such as fluoride ions.

[0026] The hierarchical pore structure of the adsorbent is key to its efficient adsorption. In this invention, during the high-temperature treatment of mixed solution B in a closed reactor, the gas-solid interface effect formed by solvent evaporation and gas (NH3 / N2) diffusion induces optimized pore size distribution. Mild dehydration at 250℃ generates uniform mesopores with a diameter of 2-5 nm, while rapid lattice contraction at 500℃ forms microporous structures of 1-2 nm. In the subsequent ball milling process, the synergistic effect of oxalic acid and polyethylene glycol regulates particle morphology through a dual mechanism of chemical etching and physical dispersion: the carboxylic acid groups of oxalic acid preferentially etch defects on the surface of metal oxides, exposing internal active sites; the long-chain molecules of polyethylene glycol adsorb onto the particle surface to form a steric hindrance layer, effectively inhibiting secondary agglomeration during milling. This invention mills the adsorbent to a particle size of 500 mesh. This particle size balances specific surface area and hydrodynamic properties, ensuring the adsorbent's suspension in the sedimentation tank for sufficient contact with pollutants while avoiding solid-liquid separation difficulties caused by excessively fine particles.

[0027] Precise modulation of the adsorbent surface chemistry enhances its pollutant compatibility. The amino functional groups are protonated under acidic conditions (-NH4+). 3+ Electrostatic attraction adsorbs anionic pollutants from wastewater; while in neutral or weakly alkaline environments, deprotonated amino groups (-NH2) can bind to Cu through coordinate bonds. 2+ Ni 2+ The complex interface of copper-cerium oxides traps fluoride ions through oxygen vacancies, where Ce... 3+ Part of F - Oxidation results in free fluorine, which is then filled with oxygen vacancies to form stable adsorption; simultaneously, Cu on the copper oxide surface... 2+ It forms [CuF4] with fluoride ions. 2- Complexes enable deep removal. The synergistic effect of multiple metals broadens the applicable pH range of the adsorbent: under treatment conditions of pH=7~8, the nickel-iron oxide framework maintains structural stability, the copper-cerium active sites maintain high reactivity, and the amino groups are in the optimal protonated state, ensuring the simultaneous and efficient removal of multiple pollutants.

[0028] In the process flow of this invention, the application parameters of the adsorbent are closely coordinated with the pre- and post-treatment stages. Slow stirring at 50-80 r / min and a homogenization residence time of 4-6 h in the equalization tank ensure that the pH of the wastewater remains stable within the range of 7-8, preventing precipitation instability of heavy metal ions due to localized excessive acidity or alkalinity, and ensuring that they enter the subsequent treatment units in a dissolved state. Medium-speed stirring at 200-300 r / min in the sedimentation tank provides sufficient fluid shear force to maintain the adsorbent's suspension state while avoiding excessively high speeds that could lead to desorption of adsorbed pollutants or damage to the material structure. The 4-6 h reaction time matches the adsorption kinetics, fully utilizing the microporous diffusion advantage of the adsorbent: in the initial 1-2 h, macropores and mesopores rapidly adsorb most pollutants, and in the subsequent stages, the micropores gradually reach adsorption equilibrium, achieving deep removal of pollutants. The synergistic effect of the molecular weight cutoff (200~1000Da) of nanofiltration membranes and adsorbents is that the adsorbents effectively remove large organic molecules and suspended particles, reducing membrane fouling; while the nanofiltration membranes precisely retain small molecule pollutants that are not adsorbed, such as low molecular weight organic solvent residues, ultimately ensuring that the effluent meets the high purity reuse standard.

[0029] This invention constructs a highly efficient, stable, and economical semiconductor wastewater treatment system by precisely controlling the chemical composition, pore structure, and surface properties of the adsorbent, combined with optimized design of process parameters. Detailed Implementation

[0030] To further illustrate the technical means and effects of the present invention in achieving its intended purpose, the following detailed description of the specific implementation methods, structures, features, and effects of the present invention, in conjunction with embodiments, is provided below.

[0031] Example 1

[0032] A semiconductor wastewater treatment process flow, the specific steps of which are as follows:

[0033] S1: The wastewater is first intercepted through a 5mm mesh screen and then introduced into an equalization tank. It is homogenized in the equalization tank for 6 hours. The stirring rate in the equalization tank is 60r / min, the pH of the equalization tank is 7~8, and the temperature is 25℃.

[0034] S2: The homogenized wastewater is fed into a sedimentation tank, adsorbent is added, and the mixture is stirred at a speed of ~300r / min for 4 hours, followed by filtration.

[0035] S3: The filtered waste liquid is separated using a polyamide composite membrane with a pore size of 0.5 nm and a molecular weight cutoff of 200 Da, thus completing the waste liquid treatment process.

[0036] The preparation process of the adsorbent in S2 is as follows:

[0037] S2.1: Disperse nickel nitrate hexahydrate in an aqueous alcohol solution, which is a mixture of water and ethanol with a volume ratio of 1:2. Stir at 150 r / min for 0.5 h to obtain a mixed solution A with a mass fraction of 40%.

[0038] S2.2: Add ferric chloride to mixed solution A, with a mass ratio of ferric chloride to nickel nitrate hexahydrate of 1:1. Stir continuously and increase the speed to 200 r / min. While stirring, raise the temperature to 40℃. After maintaining the temperature, stir for 0.5 h to obtain mixed solution B.

[0039] S2.3: Transfer the mixed solution to a sealed reaction vessel and introduce an ammonia-nitrogen mixture into the reaction vessel. The volume percentage of the ammonia-nitrogen mixture is 10% NH3 + 90% N2. The flow rate of the ammonia-nitrogen mixture is 20 m / s. After introducing the gas for 0.5 h, the temperature is raised from room temperature to 250 °C at a rate of 5 °C / min. The reaction is held at this temperature for 2 h and then raised to 500 °C at a rate of 10 °C / min for 4 h. After the reaction is completed, the mixture is cooled to room temperature under a nitrogen atmosphere, filtered, washed with deionized water, and dried at 80 °C for 12 h to obtain solid product C.

[0040] S2.4: Mix solid product C with copper nitrate and cerium nitrate in a mass ratio of 3:1:1, grind in a ball mill at 400 r / min for 1 h, then add 1 wt% oxalic acid and 0.5 wt% polyethylene glycol 2000, increase the speed to 600 r / min and continue stirring for 1 h to obtain mixture D;

[0041] S2.5: The mixture D is heated from room temperature to 350°C and calcined for 6 hours. The solid obtained after calcination is pulverized and ground to obtain the adsorbent with a particle size of 500 mesh.

[0042] Example 2

[0043] A semiconductor wastewater treatment process flow, the specific steps of which are as follows:

[0044] S1: The wastewater is first intercepted through a 5mm mesh screen and then introduced into an equalization tank. It is homogenized in the equalization tank for 3 hours. The stirring rate in the equalization tank is 80r / min, the pH is 7~8, and the temperature is 30℃.

[0045] S2: The homogenized wastewater is fed into a sedimentation tank, adsorbent is added, and the mixture is stirred at 300 r / min for 6 hours, followed by filtration.

[0046] S3: The filtered waste liquid is separated using a polyamide composite membrane with a pore size of 2nm and a molecular weight cutoff of 1000Da, thus completing the waste liquid treatment process.

[0047] The preparation process of the adsorbent in S2 is as follows:

[0048] S2.1: Disperse nickel nitrate hexahydrate in an aqueous alcohol solution, which is a mixture of water and ethanol with a volume ratio of 1:1. Stir at 150 r / min for 0.5 h to obtain a mixed solution A with a mass fraction of 50%.

[0049] S2.2: Add ferric chloride to mixed solution A. The mass ratio of ferric chloride to nickel nitrate hexahydrate is 1:2. Stir continuously and increase the speed to 200 r / min. While stirring, raise the temperature to 50℃. After maintaining the temperature, stir for 0.5 h to obtain mixed solution B.

[0050] S2.3: Transfer the mixed solution to a sealed reaction vessel and introduce an ammonia-nitrogen mixture into the reaction vessel. The volume percentage of the ammonia-nitrogen mixture is 10% NH3 + 90% N2. The flow rate of the ammonia-nitrogen mixture is 20 m / s. After introducing the gas for 0.5 h, the temperature is raised from room temperature to 250 °C at a rate of 5 °C / min. The reaction is held at this temperature for 2 h and then raised to 500 °C at a rate of 10 °C / min for 4 h. After the reaction is completed, the mixture is cooled to room temperature under a nitrogen atmosphere, filtered, washed with deionized water, and dried at 80 °C for 12 h to obtain solid product C.

[0051] S2.4: Mix solid product C with copper nitrate and cerium nitrate in a mass ratio of 3:2:1, grind in a ball mill at 400 r / min for 1 h, then add 1 wt% oxalic acid and 0.5 wt% polyethylene glycol 4000, increase the speed to 600 r / min and continue stirring for 1 h to obtain mixture D;

[0052] S2.5: The mixture D is heated from room temperature to 450°C and calcined for 4 hours. The solid obtained after calcination is pulverized and ground to obtain the adsorbent with a particle size of 500 mesh.

[0053] Example 3

[0054] A semiconductor wastewater treatment process flow, the specific steps of which are as follows:

[0055] S1: The wastewater is first intercepted through a 5mm mesh screen and then introduced into an equalization tank. It is homogenized in the equalization tank for 4 hours. The stirring rate in the equalization tank is 50r / min, the pH is 7~8, and the temperature is 25℃.

[0056] S2: The homogenized wastewater is fed into a sedimentation tank, adsorbent is added, and the mixture is stirred at 200 r / min for 6 hours, followed by filtration.

[0057] S3: The filtered waste liquid is separated using a polyamide composite membrane with a pore size of 2nm and a molecular weight cutoff of 1000Da, thus completing the waste liquid treatment process.

[0058] The preparation process of the adsorbent in S2 is as follows:

[0059] S2.1: Disperse nickel nitrate hexahydrate in an aqueous alcohol solution, which is a mixture of water and ethanol with a volume ratio of 1:3. Stir at 150 r / min for 0.5 h to obtain a mixed solution A with a mass fraction of 50%.

[0060] S2.2: Add ferric chloride to mixed solution A. The mass ratio of ferric chloride to nickel nitrate hexahydrate is 1:2. Stir continuously and increase the speed to 200 r / min. While stirring, raise the temperature to 40~50℃. After maintaining the temperature, stir for 0.5 h to obtain mixed solution B.

[0061] S2.3: Transfer the mixed solution to a sealed reaction vessel and introduce an ammonia-nitrogen mixture into the reaction vessel. The volume percentage of the ammonia-nitrogen mixture is 10% NH3 + 90% N2. The flow rate of the ammonia-nitrogen mixture is 20 m / s. After introducing the gas for 0.5 h, the temperature is raised from room temperature to 250 °C at a rate of 5 °C / min. The reaction is held at this temperature for 2 h and then raised to 500 °C at a rate of 10 °C / min for 4 h. After the reaction is completed, the mixture is cooled to room temperature under a nitrogen atmosphere, filtered, washed with deionized water, and dried at 80 °C for 12 h to obtain solid product C.

[0062] S2.4: Solid product C is mixed with copper nitrate and cerium nitrate in a mass ratio of 3:3:1 and ground in a ball mill at a speed of 400 r / min for 1 h. Then, 1 wt% oxalic acid and 0.5 wt% polyethylene glycol 4000 are added, and the speed is increased to 600 r / min and stirring is continued for 1 h to obtain mixture D.

[0063] S2.5: The mixture D is heated from room temperature to 450°C and calcined for 4 hours. The solid obtained after calcination is pulverized and ground to obtain the adsorbent with a particle size of 500 mesh.

[0064] Comparative Example 1

[0065] In this comparative example, no ammonia-nitrogen mixture was introduced during the adsorbent preparation process; the remaining steps were the same as in Example 1.

[0066] Comparative Example 2

[0067] In this comparative example, copper nitrate was not added during the preparation of the adsorbent, and the remaining steps were the same as in Example 1.

[0068] Comparative Example 3

[0069] In this comparative example, cerium nitrate was not added during the preparation of the adsorbent, and the remaining steps were the same as in Example 1.

[0070] The components of the wastewater treated in Examples 1-3 and Comparative Examples 1-3 were analyzed, and the experimental results are shown in the table below.

[0071]

[0072] The experimental data above show that all heavy metals and F in Comparative Example 1 - The significant decrease in removal rate indicates that ammonia treatment enhances metal binding capacity by optimizing the pore structure of the adsorbent; in Comparative Example 2, the lack of Cu active sites in the adsorbent leads to Cu... 2+ The removal rate decreased significantly, confirming that the introduction of copper nitrate can form specific adsorption sites for copper-based oxides; in Comparative Example 3, F - The removal rate decreased from 90% to 73.5%, indicating that the cerium-based components achieve deep adsorption by forming Ce-F chemical bonds with fluoride ions.

[0073] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A process flow for semiconductor wastewater treatment, characterized by, The process flow is specifically as follows, S1: the wastewater is first intercepted by a grid, and is introduced into a conditioning tank for homogenization treatment for 4-6 hours; S2: the wastewater after homogenization treatment is introduced into a sedimentation tank, an adsorbent is added, and stirring is carried out at a speed of 200-300 r / min for 4-6 hours, and then filtration is carried out; The adsorbent is prepared by mixing nickel nitrate hexahydrate, ferric chloride, copper nitrate and cerium nitrate, and by introducing ammonia-nitrogen mixed gas and adding oxalic acid to form a nitrogen-doped metal oxide composite porous structure. The preparation process of the adsorbent is as follows, S2.1: the nickel nitrate hexahydrate is dispersed in a water-alcohol solution, stirring is carried out at a speed of 150 r / min for 0.5 hours to obtain a mixed solution A with a mass fraction of 40-50%; S2.2: ferric chloride is added to the mixed solution A, the mass ratio of the added ferric chloride to the nickel nitrate hexahydrate is 1:(1-2), continuous stirring is carried out, the stirring speed is increased to 200 r / min, and while stirring, the temperature is increased to 40-50 DEG C, after constant temperature, stirring is carried out for 0.5 hours to obtain a mixed solution B; S2.3: the mixed solution is transferred to a sealed reaction kettle, ammonia-nitrogen mixed gas is introduced into the reaction kettle, after the gas is introduced for 0.5 hours, the temperature is increased from room temperature to 250 DEG C at a rate of 5 DEG C / min, after constant temperature at the temperature for 2 hours, the temperature is increased to 500 DEG C at a rate of 10 DEG C / min for reaction for 4 hours, after the reaction is completed, the reaction kettle is cooled to room temperature under a nitrogen atmosphere, filtration is carried out, washing is carried out with deionized water, and drying is carried out at 80 DEG C for 12 hours to obtain a solid product C; S2.4: the solid product C, copper nitrate and cerium nitrate are mixed in a mass ratio of 3:(1-3):1, grinding is carried out in a ball mill at a speed of 400 r / min for 1 hour, 1wt% oxalic acid and 0.5wt% dispersant are added, the speed is increased to 600 r / min for continuous stirring for 1 hour to obtain a mixture D; S2.5: the mixture D is heated from room temperature to 350-450 DEG C for calcination for 4-6 hours, the solid obtained after calcination is crushed and ground to obtain the adsorbent; S3: the filtered wastewater is separated and treated by using a nanofiltration membrane to complete the treatment process of the wastewater.

2. The semiconductor wastewater treatment process according to claim 1, wherein The pore size of the grid in S1 is 5 mm.

3. The semiconductor wastewater treatment process of claim 1, wherein, The homogenization treatment parameters in the conditioning tank in S1 are as follows: the stirring speed in the conditioning tank is 50-80 r / min, the pH is 7-8, and the temperature is 25-30 DEG C.

4. The semiconductor wastewater treatment process of claim 1, wherein, The nanofiltration membrane in S3 is a polyamide composite membrane, the membrane pore size is 0.5-2 nm, and the molecular weight cut-off is 200-1000 Da.

5. The semiconductor wastewater treatment process of claim 1, wherein, The water-alcohol solution in S2.1 is a mixed solution of water and ethanol in a volume ratio of 1:(1-3).

6. The semiconductor wastewater treatment process of claim 1, wherein, The gas volume percentage of the ammonia-nitrogen mixed gas in S2.3 is 10% NH3+90% N2, and the flow rate of the ammonia-nitrogen mixed gas introduced is 20 m / s.

7. The semiconductor wastewater treatment process of claim 1, wherein, The dispersant in S2.4 is polyethylene glycol, and the number average molecular weight range is 2000-4000.

8. The semiconductor wastewater treatment process of claim 1, wherein, The particle size of the adsorbent obtained by grinding in S2.5 is 500 mesh.

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