Melt silicon liquid level detection device and working method thereof

Abstract

The present application belongs to the technical field of measurement, and particularly relates to liquid level measurement, and more particularly to a molten silicon liquid level detection device and a working method thereof, wherein the molten silicon liquid level detection device comprises a crucible, a furnace cover arranged above the crucible, and an observation hole obliquely arranged on the furnace cover; a detection mechanism is arranged on the furnace cover and extends from the bottom surface of the furnace cover; a shooting module electrically connected with a control module is arranged on the top surface of the furnace cover, the control module is adapted to control the shooting module to shoot the image of the liquid surface in the crucible and the detection mechanism through the observation hole, so as to obtain the height of the bottom end of the detection mechanism from the liquid surface according to the image, and thus the real-time and accurate detection of the liquid level in the crucible is realized, and the inclined section in the detection mechanism can collect the condensed liquid, so as to avoid the influence of the condensed liquid on the image and ensure that the liquid level can be accurately obtained through the image.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of measurement, and particularly relates to liquid level measurement, and especially relates to a molten silicon liquid level height detection device and a working method thereof. BACKGROUND

[0002] In the process of growing silicon carbide single crystal by liquid phase method, the solid charge needs to be melted into liquid phase first, and the charge needs to be placed in a crucible, generally a graphite crucible, which can continuously melt carbon as a carbon source. Carbon is continuously dissolved into the solution during the process of changing the charge from solid to liquid, forming a carbon-silicon saturated solution, waiting for the seed crystal to contact, and under the condition of positive gradient, the cold solution is precipitated on the surface of the seed crystal. This process continues to dissolve the crucible and grow the single crystal, resulting in a continuous decrease in the liquid level, causing the meniscus height to be unbalanced. If the meniscus height is too low, the crystal will be immersed in the solution, and if the meniscus height is too high, the solute cannot be transported, the growth interface cannot be stabilized, and the crystal may expand, shrink, or generate polycrystals, polymorphs, and inclusions.

[0003] Therefore, in the process of growing silicon carbide single crystal by liquid phase method, a detection mechanism is arranged above the liquid level of the crucible, which CCD photographs the detection mechanism and the inverted profile of the detection mechanism in the solution to monitor the liquid level height in real time. However, because the furnace cover is provided with a flow channel for cooling liquid, the volatilized silicon vapor condenses when it cools, forming condensate that flows downward with the detection mechanism. If the condensate condenses at the bottom of the detection mechanism, CCD the length of the detection mechanism in the photographed image deviates from the preset, which further causes the liquid level height to be unable to be accurately obtained from the image.

[0004] Therefore, because the bottom of the detection mechanism condenses condensate, the length of the detection mechanism in the photographed image deviates from the preset, which further causes the liquid level height to be unable to be accurately obtained from the image. CCD Therefore, because the bottom of the detection mechanism condenses condensate, the length of the detection mechanism in the photographed image deviates from the preset, which further causes the liquid level height to be unable to be accurately obtained from the image.

[0005] It should be noted that the above information disclosed in the background section is only used to understand the background of the present application concept, and therefore, the above description is not considered to constitute prior art information. SUMMARY

[0006] The present application provides at least a molten silicon liquid level height detection device and a working method thereof.

[0007] In a first aspect, the present application provides a molten silicon liquid level height detection device, comprising:

[0008] a crucible, and a furnace cover arranged above the crucible, the furnace cover being provided with an observation hole inclinedly arranged thereon;

[0009] The furnace cover is provided with a detection mechanism extending from the bottom surface of the furnace cover;

[0010] The top surface of the furnace cover is provided with a shooting module electrically connected with the control module, the control module is adapted to control the shooting module to shoot the image of the liquid surface in the crucible and the detection mechanism through the observation hole, so as to obtain the height of the bottom end of the detection mechanism from the liquid surface according to the image.

[0011] In an optional embodiment, the detection mechanism comprises a vertical section and an inclined section;

[0012] The bottom of the vertical section is connected with the inclined section;

[0013] The bottom end of the inclined section is farther away from the straight line corresponding to the vertical section than the top end of the inclined section;

[0014] The bottom end of the observation hole is closer to the straight line corresponding to the vertical section than the top end of the observation hole;

[0015] The inclined section is located in the space region between the observation hole and the vertical section;

[0016] The inclined section is hollow inside, and a plurality of through holes are formed in the inclined surface of the inclined section close to the observation hole, so that the liquid on the inclined surface of the inclined section close to the observation hole enters the inside of the inclined section through the through holes.

[0017] In an optional embodiment, the bottom surface of the inclined section is open;

[0018] A stopper is slidably arranged in the inclined section, the stopper covers the open bottom surface of the inclined section, and the stopper extends out of the bottom surface of the inclined section when moving downward along the inclined section;

[0019] When the stopper extends out of the bottom surface of the inclined section by the maximum length, the stopper is shielded by the inclined section within the shooting range of the shooting module.

[0020] In an optional embodiment, the top surface of the furnace cover is provided with a driving mechanism electrically connected with the control module;

[0021] The top end of the vertical section is connected with the driving mechanism, and the vertical section extends out of the bottom surface of the furnace cover;

[0022] The control module is adapted to control the driving mechanism to drive the vertical section to rise and fall.

[0023] In an optional embodiment, the control module is configured to obtain the pixel distance between the bottom end of the initial inclined section and the corresponding position in the reflection according to the image of the liquid surface and the detection mechanism ΔX0, and the initial actual distance between the bottom end of the inclined section and the liquid level is obtained ΔH 0, and the proportional constant is obtained

[0024] k = ΔX 0 / ΔH 0;

[0025] wherein, k is the proportional constant.

[0026] In an optional embodiment, the control module is further configured to obtain the real-time pixel distance between the bottom end of the inclined section and the corresponding position in the reflection thereof according to the image of the liquid level and the detection mechanism, and further obtain the real-time actual distance between the bottom end of the inclined section and the liquid level;

[0027] ΔH 1= ΔX 1 / k ;

[0028] wherein, ΔH 1 is the real-time actual distance between the bottom end of the inclined section and the liquid level; ΔX 1 is the real-time pixel distance between the bottom end of the inclined section and the corresponding position in the reflection thereof.

[0029] In an optional embodiment, the crucible is arranged in the furnace body;

[0030] The inner wall of the furnace body is provided with a heating mechanism electrically connected with the control module;

[0031] The control module is configured to control the heating mechanism to heat the material in the crucible so as to melt the material into a solution.

[0032] In an optional embodiment, the furnace cover is arranged on the top surface of the furnace body, and a plurality of flow channels are arranged in the furnace cover, and a cooling liquid flows in the flow channels.

[0033] In an optional embodiment, the top surface of the furnace cover is provided with a lifting assembly electrically connected with the control module;

[0034] The lifting end of the lifting assembly is provided with a vertical seed crystal rod;

[0035] The bottom of the seed crystal rod is provided with a seed crystal;

[0036] The control module is configured to control the lifting assembly to drive the seed crystal rod to lift so as to make the seed crystal enter the crucible and grow a crystal on the seed crystal.

[0037] In a second aspect, the embodiments of the present disclosure further provide a working method of the melt silicon liquid level height detection device, comprising:

[0038] The photographing module photographs the image of the liquid surface in the crucible and the detection mechanism through the observation hole, and obtains the pixel distance between the bottom end of the inclined section in the image and the corresponding position in the reflection image ΔX , and further obtains the actual distance between the bottom end of the inclined section and the liquid surface ΔH .

[0039] The present application has the following advantages: the present melt silicon liquid level detection device comprises a crucible and a furnace cover arranged above the crucible, the furnace cover is provided with an observation hole in an inclined manner, a detection mechanism is arranged on the furnace cover and extends from the bottom surface of the furnace cover, a photographing module is arranged on the top surface of the furnace cover and electrically connected with a control module, the control module is adapted to control the photographing module to photograph the image of the liquid surface in the crucible and the detection mechanism through the observation hole, so as to obtain the height of the bottom end of the detection mechanism from the liquid surface according to the image, and further realize the real-time and accurate detection of the liquid level in the crucible, and the inclined section in the detection mechanism can collect the condensed liquid, so as to avoid the influence of the condensed liquid on the image and ensure that the liquid level can be accurately obtained through the image.

[0040] Other features and advantages of the present application will be set forth in the following description, and in part will become apparent to those skilled in the art from the description, or can be learned by practice of the present application. The objects and other advantages of the present application will be realized and achieved by the structure particularly pointed out in the description and the appended drawings.

[0041] In order to make the above-mentioned purposes, characteristics and advantages of the present application more obvious and easy to understand, the preferred embodiments are described in detail below, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0042] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or the prior art description. Obviously, the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without any creative labor.

[0043] Figure 1 A structure schematic diagram of a melt silicon liquid level detection device provided by the embodiment of the present disclosure is shown in the figure;

[0044] Figure 2 A schematic diagram of the internal structure of a furnace body provided by the embodiment of the present disclosure is shown in the figure;

[0045] Figure 3 A structure schematic diagram of a detection mechanism provided by the embodiment of the present disclosure is shown in the figure;

[0046] Figure 4 A sectional view of a detection mechanism provided by the embodiment of the present disclosure is shown in the figure;

[0047] Figure 5 A state diagram of the extension of the stop block is provided for the embodiments of the present disclosure;

[0048] Figure 6 A state diagram of the contact of the detection mechanism with the liquid surface is provided for the embodiments of the present disclosure;

[0049] Figure 7 A state diagram of the lifting of the detection mechanism is provided for the embodiments of the present disclosure.

[0050] In the drawings:

[0051] 1 crucible, 11 furnace cover, 12 observation hole, 13 shooting module, 14 flow channel;

[0052] 2 detection mechanism, 21 vertical section, 22 inclined section, 23 through hole, 24 stop block, 25 sliding slot;

[0053] 3 driving mechanism;

[0054] 4 furnace body, 41 heating mechanism;

[0055] 5 lifting assembly;

[0056] 6 seed rod. DETAILED DESCRIPTION

[0057] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the present application will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0058] As used herein, the phrases "in an embodiment", "according to an embodiment", "in some embodiments", and the like generally mean the fact that a particular feature, structure, or characteristic described after the phrase can be included in at least one embodiment of the present disclosure. Therefore, the particular feature, structure, or characteristic can be included in more than one embodiment of the present disclosure, so that these phrases do not necessarily refer to the same embodiment. As used herein, the terms "example", "exemplary", and the like are used as an example, instance, or illustration. Any implementation, aspect, or design described herein as "example" or "exemplary" is not necessarily interpreted as preferred or superior to other implementations, aspects, or designs. On the contrary, the use of the terms "example", "exemplary", and the like is intended to present the concept in a specific manner.

[0059] In the process of growing silicon carbide single crystal by liquid phase method, the solid charge needs to be melted into liquid phase first, and the charge is placed in the crucible, generally graphite crucible is selected, which can continuously melt carbon as carbon source. Carbon is continuously dissolved into the solution during the process of charge from solid to liquid, forming carbon-silicon saturated solution, waiting for the seed crystal to contact, under the condition of positive gradient, the cold solution is precipitated on the surface of the seed crystal. This process is the growth process of the crucible and the single crystal, which causes the liquid level to continuously decrease, resulting in imbalance of the meniscus height. If the meniscus is too low, the crystal will be immersed in the solution, and if the meniscus is too high, the solute cannot be transported, the stable growth interface cannot be formed, and the diameter expansion, diameter reduction or polycrystal polymorphism and inclusion may occur. Therefore, in the process of growing silicon carbide single crystal by liquid phase method, a detection mechanism is arranged above the liquid level of the crucible, which can monitor the liquid level height in real time by CCD shooting the detection mechanism and the inverted profile of the detection mechanism in the solution, but because the flow channel of the cooling liquid is arranged in the furnace cover, condensate will be formed on the detection mechanism, and the condensate will flow downward with the detection mechanism. If the condensate condenses at the bottom of the detection mechanism, the image shot will contain condensate, which will affect the accurate acquisition of the liquid level height from the image. CCD

[0060] It should be noted that similar reference numerals and letters refer to similar items throughout the accompanying drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0061] Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The following embodiments and features in the embodiments can be combined with each other without conflict.

[0062] As shown in Figure 1 and Figure 2 At least one disclosed embodiment provides a melt silicon liquid level detection device, which comprises a crucible 1 and a furnace cover 11 arranged above the crucible 1, and an observation hole 12 is inclinedly arranged on the furnace cover 11. A detection mechanism 2 is arranged on the furnace cover 11, and the detection mechanism 2 extends from the bottom surface of the furnace cover 11. A shooting module 13 electrically connected with a control module is arranged on the top surface of the furnace cover 11, the control module is adapted to control the shooting module 13 to shoot the image of the liquid level in the crucible 1 and the detection mechanism 2 through the observation hole 12, so as to acquire the height of the bottom end of the detection mechanism 2 from the liquid level according to the image, and realize the real-time and accurate detection of the liquid level height in the crucible 1. In addition, the inclined section 22 in the detection mechanism 2 can collect the condensed liquid, avoid the influence of the condensed liquid on the image, and ensure that the liquid level height can be accurately acquired from the image.

[0063] As shown in Figure 2 and Figure 3 ​As shown in an optional embodiment, the detection mechanism 2 comprises a vertical section 21 and an inclined section 22; the bottom of the vertical section 21 is connected to the inclined section 22; the bottom end of the inclined section 22 is farther away from the straight line corresponding to the vertical section 21 than the top end of the inclined section 22; the bottom end of the observation hole 12 is closer to the straight line corresponding to the vertical section 21 than the top end of the observation hole 12; the inclined section 22 is located in the space region between the observation hole 12 and the vertical section 21; the inclined section 22 is hollow inside, and a plurality of through holes 23 are formed on the inclined surface of the inclined section 22 close to the observation hole 12, so that the liquid on the inclined surface of the inclined section 22 close to the observation hole 12 enters the inside of the inclined section 22 through the through holes 23.

[0064] In this embodiment, when there is condensed liquid on the vertical section 21 or the inclined section 22, as the condensed liquid flows to the bottom end of the inclined section 22, it will enter the inside of the inclined section 22 through the through holes 23, avoiding the condensed liquid flowing to the bottom end of the inclined section 22, avoiding the image being unable to accurately identify the bottom end of the inclined section 22 due to the condensed liquid, and further avoiding affecting the accurate acquisition of the liquid level.

[0065] In this embodiment, the shooting module 13 can but is not limited to adopt CCD a camera.

[0066] As shown in Figure 3 and Figure 4 , in an optional embodiment, the bottom surface of the inclined section 22 is open; a stop block 24 is slidably arranged in the inclined section 22, the stop block 24 covers the open bottom surface of the inclined section 22, and the stop block 24 extends out of the bottom surface of the inclined section 22 when moving downward along the inclined section 22; when the stop block 24 extends out of the bottom surface of the inclined section 22 by the maximum length, the stop block 24 is blocked by the inclined section 22 within the shooting range of the shooting module 13.

[0067] As shown in Figure 5 , in this embodiment, the inner wall of the inclined section 22 can be provided with a sliding groove 25, and the side wall of the stop block 24 is provided with a sliding block corresponding to the sliding groove 25, so as to limit the sliding of the stop block 24; when the liquid in the inclined section 22 becomes more and more, the stop block 24 slides downward under the influence of its own gravity and the gravity of the liquid.

[0068] As shown in Figure 5As shown, in the present embodiment, the bottom surface of the stopper 24 can be tapered, or the stopper 24 first exposes the bottom surface of the inclined section 22 when sliding downward, so that the exposed part of the stopper 24 from the bottom surface of the inclined section 22 is in a pointed shape or tapered shape, etc. At this time, because there is more condensed liquid accumulated inside the inclined section 22, the condensed liquid that cannot enter the inside of the inclined section 22 will continue to flow along the outer wall of the exposed part of the stopper 24 from the bottom surface of the inclined section 22 after flowing to the bottom of the inclined section 22, thereby avoiding the condensed liquid from accumulating at the bottom of the inclined section 22.

[0069] In the present embodiment, in the initial state, the stopper 24 is completely retracted into the inside of the inclined section 22.

[0070] In the present embodiment, because the shooting range of the shooting module 13 will not shoot the exposed part of the stopper 24, the stopper 24 will not affect the accurate acquisition of the liquid level.

[0071] In the present embodiment, after the large-diameter fused body silicon carbide is subjected to seed crystal lowering and contact according to the process, the stopper 24 is retracted into the inside of the inclined section 22, and the shooting module 13 is used to shoot the liquid surface. Figure 6 As shown, the control module controls the driving mechanism 3 to drive the vertical section 21 to descend, and continuously controls the shooting mechanism to shoot the image. When the bottom of the inclined section 22 contacts the liquid surface, the liquid surface will appear a slight disturbance ripple. The liquid surface appearing the slight disturbance ripple is determined through the image, and the position of the inclined section 22 is recorded. As shown, immediately thereafter, the vertical section 21 is controlled to ascend so as to separate the inclined section 22 from the liquid surface. The specific moving direction of the vertical section 21 is as shown in Figure 7 Figure 7 F As shown, the precise control of the distance of upward movement is the distance from the bottom end of the inclined section 22 to the liquid surface at this moment ΔH 0, that is, the initial actual distance from the bottom end of the inclined section 22 to the liquid surface ΔH 0. After the vertical section 21 ends ascending, the image of the inclined section 22 and the reflection of the inclined section 22 in the solution is obtained at this time, the pixel distance between the bottom end of the inclined section 22 and the corresponding bottom end part in the reflection of the inclined section 22 is obtained ΔX 0, that is, the pixel distance between the bottom end of the inclined section 22 and the corresponding position in the reflection thereof ΔX 0.

[0072] As shown in Figure 1 and Figure 2 In an alternative embodiment, the top surface of the furnace cover 11 is provided with a driving mechanism 3, the driving mechanism 3 is electrically connected with a control module; the top end of the vertical section 21 is connected with the driving mechanism 3, the vertical section 21 penetrates through the furnace cover 11 and extends out of the bottom surface of the furnace cover 11; and the control module is adapted to control the driving mechanism 3 to drive the vertical section 21 to ascend and descend.

[0073] In the present embodiment, the driving mechanism 3 can be a servo motor or the like to accurately drive the vertical section 21 to ascend and descend. ​​

[0074] In an alternative embodiment, the control module is configured to obtain the pixel distance between the bottom end of the initial slanted section 22 and the corresponding position in the reflection thereof according to the image of the liquid surface and the detection mechanism 2 ΔX 0, and obtain the initial actual distance between the bottom end of the slanted section 22 and the liquid surface ΔH 0, and obtain the proportionality constant:

[0075] k = ΔX 0 / ΔH 0;

[0076] wherein, k is the proportionality constant.

[0077] In an alternative embodiment, the control module is further configured to obtain the pixel distance between the bottom end of the real-time slanted section 22 and the corresponding position in the reflection thereof according to the image of the liquid surface and the detection mechanism 2, and obtain the real-time actual distance between the bottom end of the slanted section 22 and the liquid surface;

[0078] ΔH 1= ΔX 1 / k ;

[0079] wherein, ΔH 1is the real-time actual distance between the bottom end of the slanted section 22 and the liquid surface; ΔX 1is the pixel distance between the bottom end of the real-time slanted section 22 and the corresponding position in the reflection thereof.

[0080] In this embodiment, the operator can complete the adjustment of the meniscus height according to the real-time actual distance between the bottom end of the slanted section 22 and the liquid surface, adjust the crystal pulling speed according to the change thereof until the growth is completed, and adjust the crystal pulling speed in real time according to the real-time actual distance between the bottom end of the slanted section 22 and the liquid surface, so as to realize the real-time and accurate controllability of the crystal meniscus height.

[0081] After the detection mechanism 2 is installed and ensured to be within the shooting range of the shooting module 13, the installation is completed, and the process of furnace mixing, mechanical pump starting, equipment vacuumizing, aeration, heating, continuous temperature rising, etc. is performed. When the continuous temperature rising reaches 1600 to 1700 degrees, the charge is completely melted to form a high-temperature solution and continuously stabilized to reach a saturated solution, i.e., no longer dissolving the carbon source. Due to the color difference between the detection mechanism 2 and the solution temperature, the detection mechanism 2 and its reflection can be clearly seen in the image.

[0082] In this embodiment, the main error sources in the measurement process are the influence of liquid surface shaking on the reflection position and the resolution limitation of the shooting module 13, both of which are within the controllable range in actual operation, so that the measurement accuracy is high and has practical significance.

[0083] AsFigure 2 As shown, in one optional embodiment, the crucible 1 is disposed inside the furnace body 4; the inner wall of the furnace body 4 is provided with a heating mechanism 41 electrically connected to the control module; the control module is configured to control the heating mechanism 41 to heat the material inside the crucible 1 so that the material melts into a solution.

[0084] In this embodiment, the bottom of the inclined section 22 and the bottom and side walls of the baffle 24 can be coated with tantalum carbide coating to give it non-wetting properties with the solution. This allows each furnace growth to only briefly contact the liquid surface once when it is positioned, and there is no solution residue on the surface after it is taken out of the furnace, so it can be reused multiple times.

[0085] In this embodiment, the heating mechanism 41 may be, but is not limited to, a resistance heater or an induction coil.

[0086] In one optional embodiment, the furnace cover 11 covers the top surface of the furnace body 4, and a plurality of flow channels 14 are provided inside the furnace cover 11, in which coolant flows.

[0087] In this embodiment, the coolant in the flow channel 14 can be a liquid with a low temperature.

[0088] like Figure 1 As shown, in one optional embodiment, the top surface of the furnace cover 11 is provided with a lifting assembly 5 electrically connected to the control module; the lifting end of the lifting assembly 5 is provided with a vertical seed crystal rod 6; a seed crystal is provided at the bottom of the seed crystal rod 6; the control module is configured to control the lifting assembly 5 to drive the seed crystal rod 6 to rise and fall, so that the seed crystal enters the crucible 1 and crystals are grown on the seed crystal.

[0089] In this embodiment, the lifting component 5 can be a servo motor or the like.

[0090] In this embodiment, silicon carbide with a large diameter of 6 / 8 / 12 inches is grown using the liquid phase method. The growth charge is about 10 kg (calculated based on the molar mass ratio of two different salts) and is placed in crucible 1.

[0091] At least one other disclosed embodiment also provides a method of operating the above-described molten silicon liquid level detection device, comprising: capturing images of the liquid level inside the crucible 1 and the detection mechanism 2 through the observation hole 12 by the imaging module 13; and obtaining the pixel distance between the bottom end of the inclined segment 22 in the image and its corresponding position in its reflection based on the images of the liquid level and the detection mechanism 2. ΔX This allows us to obtain the actual distance between the bottom of the inclined section 22 and the liquid surface. ΔH .

[0092] In summary, the present melt silicon liquid level detection device, including: crucible 1, and the furnace cover 11 is arranged above the crucible 1, the furnace cover 11 is inclinedly provided with an observation hole 12;The detection mechanism 2 is arranged on the furnace cover 11, and the detection mechanism 2 extends from the bottom surface of the furnace cover 11;The top surface of the furnace cover 11 is provided with a shooting module 13 electrically connected with the control module, the control module is suitable for controlling the shooting module 13 to shoot the image of the liquid level in the crucible 1 and the detection mechanism 2 through the observation hole 12, so as to obtain the height of the bottom end of the detection mechanism 2 from the liquid level according to the image, thereby realizing the real-time and accurate detection of the liquid level in the crucible 1, and the inclined section 22 in the detection mechanism 2 can collect the condensed liquid, avoid the influence of the condensed liquid on the image, and ensure that the liquid level can be accurately obtained through the image.

[0093] In the description of the embodiments of the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting" should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected, it can be mechanically connected, or it can be electrically connected, it can be directly connected, or indirectly connected through an intermediate medium, it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0094] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore it cannot be understood as a limitation on the present application. In addition, terms such as "first", "second" and other numerical terms are used herein, unless otherwise explicitly indicated herein. Therefore, the first element, component, region, layer or section discussed above can be referred to as the second element, component, region, layer or section without departing from the teachings of the example embodiments.

[0095] Spatially relative terms, such as "inner," "outer," "beneath," "below," "lower," "above," "upper," and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Spatially relative terms can be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the example term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0096] The above-described embodiments of the application are intended to be illustrative only. Changes can be made by those skilled in the art, without departing from the scope of the present application, which is defined only by the claims. The technical scope of the present application is not limited to the contents of the specification, and must be determined on the basis of the scope of claims.

Claims

1. A device for detecting the height of molten silicon surface, characterized in that, include: A crucible (1) and a furnace cover (11) disposed above the crucible (1), wherein an observation hole (12) is obliquely opened on the furnace cover (11). A detection mechanism (2) is provided on the furnace cover (11), and the detection mechanism (2) extends from the bottom surface of the furnace cover (11); The top surface of the furnace cover (11) is provided with a shooting module (13) electrically connected to the control module. The control module is adapted to control the shooting module (13) to shoot images of the liquid surface and the detection mechanism (2) inside the crucible (1) through the observation hole (12) so as to obtain the height of the bottom end of the detection mechanism (2) from the liquid surface based on the images. The detection mechanism (2) includes: a vertical section (21) and an inclined section (22); The bottom of the vertical section (21) is connected to the inclined section (22); The bottom end of the inclined segment (22) is farther away from the straight line corresponding to the vertical segment (21) than the top end of the inclined segment (22); The bottom end of the observation hole (12) is closer to the straight line corresponding to the vertical segment (21) than the top end of the observation hole (12); The inclined section (22) is located in the space between the observation hole (12) and the vertical section (21); The inclined section (22) is hollow inside, and several through holes (23) are opened on the inclined surface of the inclined section (22) near the observation hole (12) so that liquid on the inclined surface of the inclined section (22) near the observation hole (12) enters the interior of the inclined section (22) through the through holes (23).

2. The molten silicon liquid level detection device as described in claim 1, characterized in that: The bottom surface of the inclined section (22) is open; A stop (24) is slidably disposed within the inclined section (22), the stop (24) covering the opening at the bottom of the inclined section (22), and the stop (24) protruding from the bottom of the inclined section (22) when it moves downward along the inclined section (22); When the block (24) extends to the maximum length of the bottom surface of the inclined section (22), the block (24) is blocked by the inclined section (22) within the shooting range of the shooting module (13).

3. The molten silicon liquid level detection device as described in claim 2, characterized in that: The top surface of the furnace cover (11) is provided with a drive mechanism (3), which is electrically connected to the control module; The top of the vertical section (21) is connected to the drive mechanism (3), and the vertical section (21) passes through the furnace cover (11) and extends out of the bottom surface of the furnace cover (11); The control module is adapted to control the drive mechanism (3) to drive the vertical section (21) to rise and fall.

4. The molten silicon liquid level detection device as described in claim 1, characterized in that: The control module is configured to obtain the pixel distance between the bottom end of the initial tilt segment (22) and its corresponding position in its reflection based on the image of the liquid surface and the detection mechanism (2). ΔX 0, and obtain the initial actual distance between the bottom of the inclined segment (22) and the liquid surface. Δ H 0, thus obtaining the proportionality constant: k = ΔX 0 / ΔH 0； in, k It is a proportionality constant.

5. The molten silicon liquid level detection device as described in claim 4, characterized in that: The control module is also configured to obtain the pixel distance between the bottom end of the tilted segment (22) and its corresponding position in its reflection based on the image of the liquid surface and the detection mechanism (2), and then obtain the real-time actual distance between the bottom end of the tilted segment (22) and the liquid surface. ΔH 1= ΔX 1 / k ； in, ΔH 1 represents the real-time actual distance between the bottom of the inclined section (22) and the liquid surface; ΔX 1 is the pixel distance between the bottom of the real-time tilt segment (22) and its corresponding position in its reflection.

6. The molten silicon liquid level detection device as described in claim 1, characterized in that: The crucible (1) is installed inside the furnace body (4); The inner wall of the furnace body (4) is provided with a heating mechanism (41) that is electrically connected to the control module. The control module is configured to control the heating mechanism (41) to heat the material in the crucible (1) so that the material melts into a solution.

7. The molten silicon liquid level detection device as described in claim 6, characterized in that: The furnace cover (11) is placed on the top surface of the furnace body (4), and a number of flow channels (14) are opened in the furnace cover (11), and coolant flows in the flow channels (14).

8. The molten silicon liquid level detection device as described in claim 7, characterized in that: The top surface of the furnace cover (11) is provided with a lifting assembly (5) that is electrically connected to the control module. The lifting end of the lifting component (5) is provided with a vertical seed crystal rod (6). A seed crystal is provided at the bottom of the seed crystal rod (6); The control module is configured to control the lifting component (5) to drive the seed crystal rod (6) to rise and fall, so that the seed crystal enters the crucible (1) and crystals are grown on the seed crystal.

9. A method for operating the molten silicon liquid level detection device as described in claim 1, characterized in that, include: The imaging module (13) passes through the observation hole (12) to capture images of the liquid surface and the detection mechanism (2) inside the crucible (1). Based on the images of the liquid surface and the detection mechanism (2), the pixel distance between the bottom of the inclined segment (22) and its corresponding position in its reflection is obtained. ΔX Thus, the actual distance between the bottom of the inclined section (22) and the liquid surface can be obtained. ΔH .

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