Measurement line generation method and device, equipment and storage medium

Abstract

The invention discloses a measuring line generation method and device, equipment and a storage medium, and the method comprises the steps: obtaining a mask plate graph and an exposure and development graph of the mask plate graph, the mask plate graph comprises a main graph and at least one first auxiliary graph disposed near the main graph; based on the exposure and development graph and the mask graph, identifying whether the first auxiliary graph has an additional development graph in the exposure and development graph; generating a second auxiliary graph on the mask graph based on the recognition result; and generating a measurement line on the second auxiliary pattern based on the identification result, the second auxiliary pattern and the mask pattern. The data processing efficiency can be improved, and the rework rate can be reduced.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a method, apparatus, device and storage medium for generating measurement lines. Background Technology

[0002] In semiconductor manufacturing, as device process nodes continue to shrink, the optical proximity effect (OPE) becomes more severe, and features such as sub-resolution assist feature (SRAF) are usually added to improve it.

[0003] During the process of adding sub-resolution exposure aid patterns, to prevent these patterns from developing on the wafer, simulation can be used in conjunction with cutlines to capture the exposure and development results of the sub-resolution exposure aid patterns and screen out those with exposure and development risks for further processing. However, as the exposure environment of sub-resolution exposure aid patterns becomes increasingly complex, the cutlines drawn based on related technologies often fail to accurately capture the exposure and development results, leading to low data processing efficiency and high rework rates, which in turn affects the reliability and accuracy of subsequent operations. Summary of the Invention

[0004] In view of at least one technical problem in the related art, the purpose of this application is to provide a method, apparatus, device and storage medium for generating measurement lines.

[0005] To address the aforementioned technical problems, this application provides a method for generating measurement lines, comprising:

[0006] Obtain a mask pattern and an exposure and development map of the mask pattern, wherein the mask pattern includes a main pattern and at least one first auxiliary pattern disposed near the main pattern;

[0007] Based on the exposure and development pattern and the mask pattern, identify whether the first auxiliary pattern has an additional development pattern in the exposure and development pattern;

[0008] Based on the recognition results, a second auxiliary graphic is generated on the mask layout;

[0009] Based on the recognition result, the second auxiliary graphic, and the mask pattern, measurement lines are generated on the second auxiliary graphic.

[0010] In some embodiments, identifying whether there is an additional development pattern in the exposure and development map based on the exposure and development map and the mask pattern includes:

[0011] Obtain the graphic outline of each pattern in the exposure and development image;

[0012] Based on the graphic outline and the graphic in the mask layout, graphic overlap processing is performed to obtain the overlap result;

[0013] Based on the overlap result, it is determined whether the at least one first auxiliary pattern exists in the exposure and development pattern as an additional development pattern.

[0014] In some embodiments, generating a second auxiliary graphic on the mask pattern based on the recognition result includes:

[0015] If the identification result indicates the presence of additional developing patterns, the developing position information of the additional developing patterns shall be used as the reference position information;

[0016] If the identification result indicates that there is no additional developing pattern, the position information of the reference auxiliary pattern is used as the reference position information; the reference auxiliary pattern is the first auxiliary pattern among the at least one first auxiliary pattern whose distance from the main pattern meets the preset spacing condition;

[0017] Based on the reference position information, a second auxiliary graphic is generated on the mask pattern; the second auxiliary graphic is used to locate the position of the measurement line.

[0018] In some embodiments, when an additional development pattern is identified, using the development position information of the additional development pattern as reference position information includes:

[0019] If an additional development pattern is identified, the development position information of the additional development pattern in the coordinate system of the mask pattern is determined;

[0020] The development position information is used as the reference position information.

[0021] In some embodiments, generating the second auxiliary graphic on the mask layout based on the reference position information includes:

[0022] The coordinate position corresponding to the reference development position information on the mask pattern is used as the center coordinate position of the second auxiliary graphic;

[0023] Based on the basic size units of the mask pattern, the growth size information of the second auxiliary pattern is determined;

[0024] Based on the center coordinates and the growth size information, the second auxiliary graphic is generated on the mask pattern.

[0025] In some embodiments, generating measurement lines on the second auxiliary graphic based on the recognition result, the second auxiliary graphic, and the mask pattern includes:

[0026] Based on the recognition result, the second auxiliary graphic, and the mask layout, measurement attribute information is determined, which is used to characterize the orientation and / or size of the measurement line;

[0027] Based on the measurement attribute information, a measurement line is generated on the second auxiliary graphic.

[0028] In some embodiments, determining the measurement attribute information based on the recognition result, the second auxiliary graphic, and the mask pattern includes:

[0029] If the identification result indicates the presence of an additional developing pattern, the measurement attribute information is determined based on the positional relationship between the second auxiliary pattern and the adjacent main pattern on the mask pattern;

[0030] If the identification result indicates that there is no additional developing pattern, the measurement attribute information is determined based on the first auxiliary pattern at the location of the second auxiliary pattern and the mask pattern.

[0031] In some embodiments, determining the measurement attribute information based on the positional relationship between the second auxiliary graphic and the adjacent main graphics on the mask layout includes:

[0032] If the second auxiliary graphic and the adjacent main graphic on the mask pattern have projection overlap, and the spacing between the second auxiliary graphic and the two adjacent main graphics is the same, the direction of the measurement line is determined to be the first direction and the length of the measurement line is determined to be the first length.

[0033] If the second auxiliary graphic and the adjacent main graphic on the mask pattern have a projection overlap, and the second auxiliary graphic is close to one of the adjacent main graphics, the direction of the measurement line is determined to be the second direction and the length of the measurement line is determined to be the second length.

[0034] If the second auxiliary graphic does not have a projection overlap with the adjacent main graphic on the mask pattern, the direction of the measurement line is determined to be a third direction and the length of the measurement line is determined to be a third length.

[0035] Wherein, the first direction, the second direction, and the third direction are all different, and / or, the first length and the third length are determined based on the main graphic spacing of the mask layout and the width of the first auxiliary graphic, respectively, and / or, the second length is related to the width of the first auxiliary graphic.

[0036] In some embodiments, the orientation angle between the first direction and the second direction is 90°, and the orientation angle of the third direction is between the first direction and the second direction;

[0037] And / or, the first length is the difference between the spacing between the main patterns of the mask layout and the width of the first auxiliary pattern by a first preset multiple; the third length is the difference between the spacing between the main patterns of the mask layout and the width of the first auxiliary pattern by a second preset multiple; the second length is the width of the first auxiliary pattern by a third preset multiple.

[0038] In some embodiments, determining the measurement attribute information based on the first auxiliary graphic at the location of the second auxiliary graphic and the mask layout includes:

[0039] The direction of the normal to the first auxiliary graphic at the location of the second auxiliary graphic is taken as the direction of the measurement line;

[0040] Calculate the width of the first auxiliary graphic at a fourth preset multiple, and use it as the length of the measurement line;

[0041] The measurement attribute information is obtained by determining the direction and length of the measurement line.

[0042] In some embodiments, the measurement line is also used to assist in constructing a development prediction model, which is at least used to predict the development result of the first auxiliary pattern;

[0043] And / or, the measurement lines are also used to optimize the graphic size of at least one of the first auxiliary graphics.

[0044] In some embodiments, the exposure and development image is a scanning electron microscope image of the mask pattern after exposure and development.

[0045] On the other hand, this application also provides a measuring line generation apparatus, comprising:

[0046] An acquisition module is used to acquire a mask pattern and an exposure and development image of the mask pattern, wherein the mask pattern includes a main pattern and at least one first auxiliary pattern disposed near the main pattern;

[0047] The identification module is used to identify, based on the exposure and development pattern and the mask pattern, whether the first auxiliary pattern has an additional development pattern in the exposure and development pattern;

[0048] The first generation module is used to generate a second auxiliary graphic on the mask pattern based on the recognition result;

[0049] The second generation module is used to generate measurement lines on the second auxiliary graphic based on the recognition result, the second auxiliary graphic, and the mask pattern.

[0050] In some embodiments, the identification module is further configured to:

[0051] Obtain the graphic outline of each pattern in the exposure and development image;

[0052] Based on the graphic outline and the graphic in the mask layout, graphic overlap processing is performed to obtain the overlap result;

[0053] Based on the overlap result, it is determined whether the at least one first auxiliary pattern exists in the exposure and development pattern as an additional development pattern.

[0054] In some embodiments, the first generation module includes:

[0055] The first position determination submodule is used to use the development position information of the additional development pattern as reference position information when the identification result indicates that there is an additional development pattern.

[0056] The second position determination submodule is used to use the position information of the reference auxiliary graphic as the reference position information when the recognition result indicates that there is no additional developing graphic; the reference auxiliary graphic is the first auxiliary graphic among the at least one first auxiliary graphic whose distance from the main graphic meets the preset spacing condition;

[0057] The first generation submodule is used to generate a second auxiliary graphic on the mask pattern according to the reference position information; the second auxiliary graphic is used to locate the position of the measurement line.

[0058] In some embodiments, the first position determining submodule is further configured to:

[0059] If an additional development pattern is identified, the development position information of the additional development pattern in the coordinate system of the mask pattern is determined;

[0060] The development position information is used as the reference position information.

[0061] In some embodiments, the first generation submodule is further configured to:

[0062] The coordinate position corresponding to the reference development position information on the mask pattern is used as the center coordinate position of the second auxiliary graphic;

[0063] Based on the basic size units of the mask pattern, the growth size information of the second auxiliary pattern is determined;

[0064] Based on the center coordinates and the growth size information, the second auxiliary graphic is generated on the mask pattern.

[0065] In some embodiments, the second generation module includes:

[0066] The attribute determination submodule is used to determine measurement attribute information based on the recognition result, the second auxiliary graphic, and the mask layout. The measurement attribute information is used to characterize the orientation and / or size of the measurement line.

[0067] A generation submodule is used to generate measurement lines on the second auxiliary graphic based on the measurement attribute information.

[0068] In some embodiments, the attribute determination submodule includes:

[0069] The first attribute determination unit is used to determine the measurement attribute information based on the positional relationship between the second auxiliary graphic and the adjacent main graphic on the mask pattern when the recognition result indicates the presence of an additional development graphic.

[0070] The second attribute determination unit is used to determine the measurement attribute information based on the first auxiliary pattern at the location of the second auxiliary pattern and the mask pattern when the recognition result indicates that there is no additional development pattern.

[0071] In some embodiments, the first attribute determining unit is further configured to:

[0072] If the projections of the second auxiliary graphic and the adjacent main graphic on the mask pattern coincide in the target reference direction, and the spacing between the second auxiliary graphic and the two adjacent main graphics is the same, the direction of the measurement line is determined to be the first direction and the length of the measurement line is determined to be the first length.

[0073] If the projections of the second auxiliary graphic and the adjacent main graphic on the mask pattern coincide in the target reference direction, and the second auxiliary graphic is close to one of the adjacent main graphics, the direction of the measurement line is determined to be the second direction and the length of the measurement line is determined to be the second length.

[0074] If the projection of the second auxiliary graphic and the adjacent main graphic on the mask pattern in the target reference direction do not overlap, the direction of the measurement line is determined to be the third direction and the length of the measurement line is determined to be the third length.

[0075] Wherein, the first direction, the second direction, and the third direction are all different, and / or, the first length and the third length are determined based on the main graphic spacing of the mask layout and the width of the first auxiliary graphic, respectively, and / or, the second length is related to the width of the first auxiliary graphic.

[0076] In some embodiments, the orientation angle between the first direction and the second direction is 90°, and the orientation angle of the third direction is between the first direction and the second direction;

[0077] And / or, the first length is the difference between the spacing between the main patterns of the mask layout and the width of the first auxiliary pattern by a first preset multiple; the third length is the difference between the spacing between the main patterns of the mask layout and the width of the first auxiliary pattern by a second preset multiple; the second length is the width of the first auxiliary pattern by a third preset multiple.

[0078] In some embodiments, the second attribute determining unit is further configured to:

[0079] The direction of the normal to the first auxiliary graphic at the location of the second auxiliary graphic is taken as the direction of the measurement line;

[0080] Calculate the width of the first auxiliary graphic at a fourth preset multiple, and use it as the length of the measurement line;

[0081] The measurement attribute information is obtained by determining the direction and length of the measurement line.

[0082] In some embodiments, the measurement line is also used to assist in constructing a development prediction model, which is at least used to predict the development result of the first auxiliary pattern;

[0083] And / or, the measurement lines are also used to optimize the graphic size of at least one of the first auxiliary graphics.

[0084] In some embodiments, the exposure and development image is a scanning electron microscope image of the mask pattern after exposure and development.

[0085] On the other hand, this application also provides an electronic device, which includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement any of the above-described methods for generating measurement lines.

[0086] On the other hand, this application also provides a computer-readable storage medium storing at least one instruction or at least one program, wherein the at least one instruction or the at least one program is loaded and executed by a processor to implement the measurement line generation method described above.

[0087] On the other hand, this application also provides a computer program product or computer program, which includes computer instructions stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the computer device to perform any of the above-described methods for generating measurement lines.

[0088] The method, apparatus, device, and storage medium for generating measurement lines disclosed in this application have at least the following beneficial effects:

[0089] By acquiring a mask layout and its exposure and development map, the mask layout includes a main pattern and at least one first auxiliary pattern positioned near the main pattern. Based on the exposure and development map and the mask layout, it is determined whether the first auxiliary pattern contains additional development patterns in the exposure and development map. Based on the identification result, a second auxiliary pattern is generated on the mask layout. Based on the identification result, the second auxiliary pattern, and the mask layout, measurement lines are generated on the second auxiliary pattern. In this way, by matching and identifying the mask layout and the exposure and development map, and based on the identification result for additional development patterns, a second auxiliary pattern is first generated on the mask layout. Then, combining the identification result, the second auxiliary pattern, and the mask layout, a more reasonable measurement line is generated on the second auxiliary pattern. Based on this measurement line, the exposure and development results can be captured more accurately and flexibly, improving data processing efficiency and reducing rework rate. Simultaneously, it reduces reliance on manual operation, which helps ensure the reliability and accuracy of subsequent operations (such as modeling). Attached Figure Description

[0090] To more clearly illustrate the technical solutions and advantages in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0091] Figure 1 This is a schematic diagram of the exposure and development results after adding SRAF in related techniques.

[0092] Figure 2 This is a schematic diagram of the development results captured based on drawn measurement lines in related technologies.

[0093] Figure 3 This is a flowchart of a method for generating measurement lines according to some embodiments of this application.

[0094] Figure 4A This is a schematic diagram of extracting graphic contours according to some embodiments of this application.

[0095] Figure 4B It is an overlay image obtained by overlaying the exposed and developed image containing the graphic outline with the graphic in the mask pattern according to some embodiments of this application.

[0096] Figure 5 This is a schematic diagram of generating a measurement line according to some embodiments of this application.

[0097] Figure 6 This is a schematic diagram of another method for generating measurement lines according to some embodiments of this application.

[0098] Figure 7 This is a schematic diagram of another method for generating measurement lines according to some embodiments of this application.

[0099] Figure 8 This is a schematic diagram of another method for generating measurement lines according to some embodiments of this application.

[0100] Figure 9A This is a schematic diagram of drawing measurement lines in related technologies.

[0101] Figure 9B This is a schematic diagram of a measurement line provided according to some embodiments of this application.

[0102] Figure 10 This is a process for determining development and correcting measurements according to some embodiments of this application.

[0103] Figure 11 This is a schematic diagram of the structure of a measurement line generation device provided according to some embodiments of this application.

[0104] Figure 12 This is a schematic diagram of the structure of an electronic device provided according to some embodiments of this application. Detailed Implementation

[0105] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0106] The terms "an embodiment" or "embodiment" as used herein refer to a specific feature, structure, or characteristic that may be included in at least one implementation of this application. In the description of this application, unless otherwise expressly specified and limited, the terms "upper," "lower," "left," "right," "top," "bottom," etc., indicating directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," etc., are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein.

[0107] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, the layer or region will be located "below" or "under" the other layer or region.

[0108] To improve the Optical Proximity Effect (OPE), sub-resolution exposure aid patterns (SRAFs) are typically added to the mask layout to enhance the process window and improve development. During the addition of SRAFs, to prevent them from developing onto the wafer, simulations combined with cutlines can be used to capture the exposure and development results of the SRAFs, and SRAFs with potential exposure and development risks can be identified for further processing. For example, see [link to example]. Figure 1 , Figure 1 This is a schematic diagram illustrating the exposure and development results after adding SRAF in related techniques. Figure 1 In the photoresist layer 130, there are development outlines 110 of the main pattern of the mask layout, as well as development outlines 121 and 122 of the SRAF. Then, the light intensity threshold and SRAF screening are determined based on the exposure development outlines.

[0109] However, the inventors discovered that as the exposure environment of SRAF becomes increasingly complex, the measurement lines drawn based on related technologies often fail to accurately capture the exposure and development results of SRAF, resulting in low data processing efficiency and high rework rate, which in turn affects the reliability and accuracy of subsequent operations.

[0110] See Figure 2 , Figure 2 This is a schematic diagram illustrating the capture and development of development results based on drawn measurement lines in related technologies. Figure 2 In the mask pattern, there are several main patterns 210, several first sub-resolution exposure auxiliary patterns 220, and several second sub-resolution exposure auxiliary patterns 230. After simulated exposure of the mask pattern, the main pattern development 240 (e.g., the large circular pattern shown in the figure) corresponding to the main pattern 210 is generated, and the SRAF development 250 (e.g., the small circular pattern shown in the figure) corresponding to each sub-resolution exposure auxiliary pattern is generated. In related technologies, measurement lines are usually drawn on the SRAF, for example, measurement lines 270 are drawn on the first sub-resolution exposure auxiliary pattern 220, and then the exposure and development results of the SRAF are attempted to be captured along the direction of the measurement lines 270. However, according to Figure 2 As can be seen from the schematic diagram on the left and the enlarged schematic diagram of the local area on the right, the measurement line 270 does not coincide with the SRAF development line 250. Therefore, the exposure and development results of the SRAF cannot be accurately captured through the measurement line 270, which affects the accuracy and efficiency of subsequent operations.

[0111] In view of this, this application provides a method, apparatus, device, and storage medium for generating measurement lines. The method involves acquiring a mask pattern and its exposure and development map, whereby the mask pattern includes a main pattern and at least one first auxiliary pattern positioned near the main pattern. Based on the exposure and development map and the mask pattern, it identifies whether the first auxiliary pattern contains additional development patterns in the exposure and development map. Based on the identification result, a second auxiliary pattern is generated on the mask pattern. Based on the identification result, the second auxiliary pattern, and the mask pattern, measurement lines are generated on the second auxiliary pattern. Thus, by matching and identifying the mask pattern and the exposure and development map, and based on the identification result for additional development patterns, a second auxiliary pattern is first generated on the mask pattern. Then, based on determined measurement attribute information, more reasonable measurement lines of different lengths and / or angles are automatically generated. This allows for more accurate and flexible capture of exposure and development results, improves data processing efficiency, and reduces rework rates. Simultaneously, it reduces reliance on manual operation, which helps ensure the reliability and accuracy of subsequent operations (such as modeling).

[0112] Figure 3 This is a flowchart illustrating a method for generating measurement lines according to some embodiments of this application. See also... Figure 3 The method for generating measurement lines includes the following steps:

[0113] In S302, a mask pattern and an exposure and development map of the mask pattern are acquired. The mask pattern includes a main pattern and at least one first auxiliary pattern disposed near the main pattern.

[0114] The mask pattern can be a test pattern or a modified pattern that has undergone at least one Optical Proximity Correction (OPC) adjustment on the target design pattern. The mask pattern includes a main pattern and at least one first auxiliary pattern positioned near the main pattern. This first auxiliary pattern can be a sub-resolution Assist Feature (SRAF), also known as a scattering bar (SBAR). The number of main patterns and the number of first auxiliary patterns near the main pattern are not specifically limited here.

[0115] An exposure and development image reflects the actual development of a mask pattern after exposure and development. In this embodiment, the exposure and development image can be a scanning electron microscope (SEM) image of the mask pattern after exposure and development, i.e., an SEM image. In other embodiments, the exposure and development image can be other types of electron microscope images.

[0116] Optionally, the mask pattern and its exposure and development images can be obtained from a storage location, which may include, but is not limited to, local storage space, remote storage devices (such as databases), related computer equipment, the cloud, or one or more other sources. During the acquisition of the mask pattern and exposure and development images, they can be acquired simultaneously or sequentially; the order in which they are acquired is not specifically limited here.

[0117] In S304, based on the exposure and development map and the mask pattern, it is determined whether there is an additional development map in the exposure and development map for the first auxiliary map.

[0118] Among them, the additional developing pattern is used to represent the image that is developed in addition to the developing pattern of the main pattern, that is, the developing pattern of the non-main pattern.

[0119] Generally, the exposure and development map contains the developed pattern of the main pattern in the mask. During the exposure and development process, at least one first auxiliary pattern in the mask may inevitably develop on the exposure and development map, i.e., an additional developed pattern is displayed on the exposure and development map.

[0120] Optionally, by comparing whether each development pattern in the exposure development pattern matches the main pattern in the mask pattern, if there is a development pattern in the exposure development pattern that does not match the main pattern, it is determined that there is an additional development pattern in the exposure development pattern, and the mismatched development pattern is taken as the additional development pattern.

[0121] In some embodiments, identifying whether at least one first auxiliary pattern exists in the exposure and development pattern as an additional development pattern, based on the exposure and development pattern and the mask pattern, includes:

[0122] In S3042, the graphic outlines of each pattern in the exposure and development image are obtained.

[0123] Alternatively, the outlines of each pattern contained in the exposure and development image can be extracted using computer vision (OpenCV) to obtain the extracted graphic outlines.

[0124] In this embodiment, the exposure and development image is a scanning electron microscope (SEM) image of the mask pattern after exposure and development. For example... Figure 4A As shown, Figure 4A A schematic diagram of extracting a graphic contour is provided according to some embodiments of this application. See also Figure 4A In the displayed scanning electron microscope image, the graphic contours of each pattern contained therein are extracted, specifically the graphic contours 410 and 420 of two patterns. For example, the contour extraction algorithm may include, but is not limited to, one or more algorithms such as the Canny edge detection algorithm and the Sobel edge detection algorithm.

[0125] In S3044, graphic overlap processing is performed based on the graphic outline and the graphic in the mask layout to obtain the overlap result.

[0126] Optionally, the extracted image contour can be converted into a contour layer of a mask image, and then coordinate-calibrated with the mask image. This involves adjusting the coordinates of the contour layer containing the image contour to the coordinate system of the mask image, thereby achieving graphic overlay processing between the graphic contour and the graphic in the mask image, and thus obtaining the corresponding overlay result. For example, the coordinate calibration method can be: using the minimum distance error (e.g., ΣEPE) of the main graphic in the mask image in four directions as a cost function to calibrate the coordinates of the graphic contour corresponding to the scanning electron microscope image. The overlay result can include an overlay image after coordinate calibration.

[0127] In S3046, based on the overlap results, it is identified whether at least one first auxiliary pattern exists in the exposure and development pattern as an additional development pattern.

[0128] Optionally, after obtaining the overlap result, the presence of additional patterns can be identified by detecting the main pattern in the mask image and the outline of the pattern after calibration coordinates. For example, this can be done by comparing the number of outlines with the number of main patterns in the mask image. If the number of outlines is greater than the number of main patterns in the mask image, an additional pattern is identified, meaning at least one first auxiliary pattern has an additional developed pattern in the exposure and development image. If the number of outlines is equal to the number of main patterns in the mask image, no additional pattern is identified, meaning at least one first auxiliary pattern does not have an additional developed pattern in the exposure and development image. Figure 4B As shown, Figure 4B According to some embodiments of this application, an overlay image is obtained by overlaying an exposure and development image containing a graphic outline with a graphic in a mask. This overlay image includes one main graphic 430 and several SRAF graphics 440. The number of extracted graphic outlines is two, while the number of main graphics 430 in the mask is one. Clearly, the number of graphic outlines is greater than the number of main graphics in the mask, therefore, it is determined that there are additional development graphics. Specifically, the graphic outline 420 marked with a dashed circle 450 in the image is identified as an additional development graphic.

[0129] The above embodiments, by overlaying the exposure and development image and the mask image, identify whether there are additional development patterns in the exposure and development image, thus enabling automatic judgment of SRAF development. Furthermore, the overlay method allows for the acquisition of the location information of the SRAF development area, facilitating the subsequent generation of a second auxiliary image based on this location information.

[0130] In S306, a second auxiliary graphic is generated on the mask pattern based on the recognition result.

[0131] Optionally, after obtaining the recognition results, a differentiated second auxiliary graphic can be generated on the mask pattern based on different recognition results.

[0132] In some embodiments, generating a second auxiliary graphic on the mask layout based on the recognition result includes:

[0133] In S3062, if the identification result indicates the presence of an additional developing pattern, the developing position information of the additional developing pattern is used as the reference position information.

[0134] Optionally, if the identification result indicates the presence of additional developing patterns, the coordinates of the SRAF developing position can be read based on the overlay result, i.e., the developing position information of the additional developing pattern. Then, the coordinates of this SRAF developing position are used as reference position information.

[0135] In some embodiments, when the presence of additional developing patterns is identified, using the developing position information of the additional developing patterns as reference position information includes:

[0136] In cases where additional development patterns are identified, the development position information of the additional development patterns in the coordinate system of the mask pattern is determined;

[0137] Use the development position information as the reference position information.

[0138] Optionally, if an additional developing pattern is identified, it is determined whether the additional developing pattern and the mask pattern are in the same coordinate system. If they are determined to be in the same coordinate system, the position coordinates of the additional developing pattern are identified as the developing position information, and this developing position information is used as the reference position information. If they are determined to be in different coordinate systems, coordinate calibration is performed on the additional developing pattern to unify its coordinates to the coordinate system of the mask pattern. Then, the position coordinates of the additional developing pattern in the coordinate system of the mask pattern are identified as the developing position information, and this developing position information is used as the reference position information.

[0139] In S3064, if the identification result indicates that there is no additional developing pattern, the position information of the reference auxiliary pattern is used as the reference position information; the reference auxiliary pattern is at least one of the first auxiliary patterns whose distance from the main pattern meets the preset spacing condition.

[0140] Optionally, if the identification result indicates that no additional developing pattern exists, one of the at least one first auxiliary pattern can be selected as a reference auxiliary pattern, and the position information of the reference auxiliary pattern can be identified as reference position information. The reference auxiliary pattern can satisfy a preset distance condition with respect to the main pattern. For example, the preset distance condition may include, but is not limited to, at least one of the following: the first auxiliary pattern furthest from the main pattern, and the first auxiliary pattern closest to the main pattern. The position information of the reference auxiliary pattern may include the coordinates of the center point of the reference auxiliary pattern.

[0141] In S3066, a second auxiliary graphic is generated on the mask pattern based on the reference position information; the second auxiliary graphic is used to locate the position of the measurement line.

[0142] Optionally, the reference position information can be used as the center point of the second auxiliary graphic, and a second auxiliary graphic surrounding the center point of the second auxiliary graphic can be generated on the mask layout based on the center point of the second auxiliary graphic. The position of the measurement line is determined by the position information of the second auxiliary graphic, so as to realize the positioning of the measurement line (cutline) by means of the second auxiliary graphic. Optionally, the generated second auxiliary graphic can be on the same layer as the first auxiliary graphic. For example, the shape of the second auxiliary graphic includes, but is not limited to, polygons such as squares, rectangles, and rhombuses, or circles, ellipses, complex shapes, or irregular shapes.

[0143] In some embodiments, generating a second auxiliary graphic on a mask layout based on reference location information includes:

[0144] The coordinate position corresponding to the reference development position information on the mask pattern is used as the center coordinate position of the second auxiliary graphic;

[0145] Based on the basic size units of the mask layout, the growth size information of the second auxiliary pattern is determined;

[0146] A second auxiliary graphic is generated on the mask pattern based on the center coordinate position and growth size information.

[0147] Optionally, the coordinates of the center point corresponding to the reference development position information on the mask pattern can be determined as the center coordinates of the second auxiliary pattern. Then, the growth size information of the second auxiliary pattern is determined based on the basic size unit of the mask pattern. This basic size unit of the mask pattern can be used to characterize the design layout accuracy of the mask pattern. For example, depending on different design layout accuracies, the basic size unit can be, but is not limited to, 0.1nm, 0.2nm, 0.5nm, 0.8nm, 1nm, etc. Of course, the basic size unit can be other values, smaller values, or larger values; this application does not specifically limit this. Optionally, the growth size information of the second auxiliary pattern can be 1 to 20 times the basic size unit of the mask pattern. In this embodiment, the basic size unit of the mask pattern can be selected as 1nm. This growth size information reflects the size of the second auxiliary pattern, such as side length and radius. After evaluation, the second auxiliary pattern of this size will not affect the simulation calculation results.

[0148] It should be noted that the second auxiliary graphic is too small to be easily visualized on the mask layout. For ease of presentation, only schematic modules are used in the accompanying figures to represent the actual mask layout.

[0149] Once the growth size information of the second auxiliary pattern is determined, the second auxiliary pattern can be grown according to this growth size information, using the center coordinate position as the center point. For example, a square image with a side length of 1×1nm can be formed as the second auxiliary pattern. Optionally, the generated second auxiliary pattern can be on the same layer as the first auxiliary pattern.

[0150] In S308, measurement lines are generated on the second auxiliary graphic based on the recognition results, the second auxiliary graphic, and the mask layout.

[0151] The measurement lines are used to assist in identifying the development results of at least one first auxiliary pattern.

[0152] In some embodiments, based on the recognition result, the second auxiliary graphic, and the mask layout, a measurement line is generated on the second auxiliary graphic, including:

[0153] In S3082, measurement attribute information is determined based on the recognition result, the second auxiliary graphic, and the mask layout; the measurement attribute information is used to characterize the orientation and / or size of the measurement line.

[0154] Optionally, the measurement attribute information of the measurement line can be determined based on the correspondence between the recognition result and the second auxiliary graphic and the mask pattern. This measurement attribute information is used to characterize the orientation and / or size of the measurement line, so as to determine the reverse direction and / or length of the measurement line through the measurement attribute information.

[0155] In some embodiments, determining the measurement attribute information based on the identification result, the second auxiliary graphic, and the mask layout includes:

[0156] In S30822, if the identification result indicates the presence of an additional developing pattern, measurement attribute information is determined based on the positional relationship between the second auxiliary pattern and the adjacent main pattern on the mask pattern.

[0157] Optionally, if the identification result indicates the presence of additional developing patterns, the measurement attribute information of the measurement lines can be determined based on the positional relationship between the second auxiliary pattern and the adjacent main pattern on the mask pattern.

[0158] In some embodiments, determining measurement attribute information based on the positional relationship between the second auxiliary graphic and the adjacent main graphic on the mask layout may include:

[0159] Case a: If the second auxiliary graphic and the adjacent main graphic on the mask pattern have projection overlap, and the spacing between the second auxiliary graphic and the two adjacent main graphics is the same, the direction of the measurement line is determined as the first direction and the length of the measurement line is determined as the first length.

[0160] Case b: If the second auxiliary graphic and the adjacent main graphic on the mask pattern have projection overlap, and the second auxiliary graphic is close to an adjacent main graphic, the direction of the measurement line is determined as the second direction and the length of the measurement line is determined as the second length.

[0161] Case c: If the second auxiliary graphic does not have a projection overlap with the adjacent main graphic on the mask pattern, determine the direction of the measurement line as the third direction and the length of the measurement line as the third length.

[0162] Alternatively, the above directions and lengths can satisfy at least one of the following relationships:

[0163] The first direction, the second direction, and the third direction are all different. Optionally, the orientation angle between the first direction and the second direction can be 90°, and the orientation angle of the third direction is between the first direction and the second direction.

[0164] And / or, the first length and the third length are determined based on the main pattern pitch and the width of the first auxiliary pattern of the mask layout, respectively. For example, the first length can be the main pattern pitch of the mask layout. MainPattern The third length is the difference between the width (CD) of the first auxiliary graphic and the width of the first auxiliary graphic, which is a first preset multiple. The third length can be the pitch of the main graphic in the mask pattern. MainPattern The difference between the width (CD) of the first auxiliary graphic and the second preset multiple, wherein the first preset multiple and the second preset multiple may be, but are not limited to, suitable values.

[0165] And / or, the second length is related to the width of the first auxiliary graphic. For example, the second length may be the difference between the width (CD) of the first auxiliary graphic and a third preset multiple; wherein the third preset multiple may be, but is not limited to, twice.

[0166] Specifically, 0° can be defined as parallel to the long side of SRAF, 90° as perpendicular to the long side of SRAF, and 45° as oblique direction.

[0167] In a specific embodiment, the second auxiliary graphic and the adjacent main graphics on the mask pattern are projected toward the target reference direction, respectively, and it is determined whether there is projection overlap between the two. For example, the target reference direction can be a horizontal direction and / or a vertical direction. If it is determined that there is projection overlap, it is then determined whether the spacing between the second auxiliary graphic and the two adjacent main graphics is the same.

[0168] If it is determined that the spacing between the second auxiliary graphic and the two adjacent main graphics is the same, then condition a above is satisfied. For example, since the centerline positions of the second auxiliary graphic and the additional developing graphic are the same, and the adjacent main graphics correspond to the main developing graphic, the correspondence between the second auxiliary graphic and the adjacent main graphics on the mask can be reflected based on the correspondence between the additional developing graphic and the main developing graphic. For example... Figure 5 As shown, in the exposure and development diagram on the left, the additional development pattern 520 corresponding to the second auxiliary pattern 530 and the main pattern development pattern 511 or 520 corresponding to the adjacent main pattern are projected horizontally, and obviously, there is projection overlap between the two. Furthermore, if it is detected that the distance between the additional development pattern 520 corresponding to the second auxiliary pattern 530 and the two adjacent main pattern development patterns 511 and 520 is the same, then it is determined that condition a is satisfied. At this time, the length of the measurement line is the first length, which can be determined based on the main pattern spacing of the mask pattern and the width of the first auxiliary pattern. Specifically, the first length can be the main pattern spacing of the mask pattern (Pitch). MainPattern The width of the first auxiliary graphic (CD) is a multiple of the first preset multiple. SRAFwidth The difference between the first preset multiple and the first auxiliary pattern width. For example, the first preset multiple can be an integer, such as two times, three times, four times, etc. In this embodiment, for case a, taking two times as an example, the first length is the difference between the main pattern spacing of the mask pattern and twice the width of the first auxiliary pattern, that is, the length of the measurement line is Pitch. MainPattern -2*CD SRAFwidth Of course, the first preset multiple can also be other suitable integer or decimal values.

[0169] In this embodiment, for case a, the first direction can be determined to be the horizontal direction, that is, the direction angle of the first direction is 0°. Therefore, the direction angle of the measurement line 540 is 0°, and the length of the measurement line 540 is Pitch. MainPattern -2*CD SRAFwidth The measurement line 540 generated under this condition a and the development prediction result determined based on the measurement line 540 are shown in the figure below. Figure 5 As shown on the right side of the middle section.

[0170] If it is determined that the spacing between the second auxiliary pattern and the two adjacent main patterns is different, and the second auxiliary pattern is closer to one of the adjacent main patterns, then it is considered that the additional development pattern of the SRAF may overlap with the development of the main pattern, i.e., condition b above is satisfied. For example, since the centerline positions of the second auxiliary pattern and the additional development pattern are the same, and the adjacent main patterns correspond to the main pattern development pattern, the correspondence between the second auxiliary pattern and the adjacent main patterns on the mask can be reflected based on the correspondence between the additional development pattern and the main pattern development pattern. For example... Figure 6As shown, in the exposure and development diagram on the left, the additional development pattern 620 corresponding to the second auxiliary pattern 630 and the main pattern development pattern 611 or 620 corresponding to the adjacent main pattern are projected horizontally, and obviously, there is projection overlap between the two. Then, if it is detected that the distances between the additional development pattern 620 corresponding to the second auxiliary pattern 630 and the two adjacent main pattern development patterns 611 and 620 are not the same, and the second auxiliary pattern is closer to one of the adjacent main patterns 1, then it is determined that condition b above is satisfied. In this case, the length of the measurement line is the second length, which can be determined based on the width of the first auxiliary pattern. Specifically, the second length can be the width (CD) of the first auxiliary pattern, which is a third preset multiple. SRAFwidth The difference between the two values. For example, the third preset multiple can be an integer, such as two, three, four, etc. In this embodiment, for case b, taking two as an example, the second length is twice the width of the first auxiliary graphic, that is, the length of the measurement line is 2*CD. SRAFwidth Of course, the third preset multiple can also be other suitable integer or decimal values.

[0171] In this embodiment, for case b, the second direction can be determined to be a vertical direction, that is, the direction angle of the second direction is 90°. Therefore, the direction angle of the measurement line 640 is 90°, and the length of the measurement line 640 is 2*CD. SRAFwidth The measurement line 640 generated under case b and the development prediction result determined based on the measurement line 640 are shown in the figure below. Figure 6 As shown on the right side of the middle section.

[0172] If it is determined that there is no projection overlap between the two, then the additional development is considered to be caused by the combination of multiple first auxiliary graphics, i.e., satisfying condition c above. For example, as shown... Figure 7 As shown, the additional developing pattern 720 corresponding to the second auxiliary pattern 730 and the main developing pattern 711 or 720 corresponding to the adjacent main pattern are projected horizontally and vertically, respectively. Clearly, there is no projection overlap in either the horizontal or vertical directions, thus satisfying condition c above. In this case, the length of the measurement line 740 is the third length, which can be determined based on the main pattern spacing of the mask layout and the width of the first auxiliary pattern. Specifically, the third length can be the main pattern spacing of the mask layout (Pitch). MainPattern The width of the first auxiliary graphic (CD) is a multiple of the second preset multiple. SRAFwidth The difference between the second preset multiple and the first auxiliary pattern width. For example, the second preset multiple can be an integer, such as two, three, four, etc. In this embodiment, for case c, taking two as an example, the third length is the difference between the main pattern spacing of the mask layout and twice the width of the first auxiliary pattern, that is, the length of the measurement line is Pitch. MainPattern -2*CDSRAFwidth Of course, the second preset multiple can also be other suitable integer or decimal values.

[0173] In this embodiment, for case c, the second direction can be determined to be an oblique direction, that is, the direction angle of the second direction is 45°. Therefore, the direction angle of the measurement line 740 is 45°, and the length of the measurement line 740 is Pitch. MainPattern -2*CD SRAFwidth The measurement line 740 generated under condition c, and the development prediction result determined based on the measurement line 740, are shown in the figure below. Figure 7 As shown on the right side of the middle section.

[0174] In S30824, if the identification result indicates that there is no additional developing pattern, the measurement attribute information is determined based on the first auxiliary pattern and the mask pattern at the location of the second auxiliary pattern.

[0175] Optionally, if the identification result indicates that there is no additional developing pattern, the length and direction of the measurement line are determined directly from the first auxiliary pattern and the mask pattern at the location of the second auxiliary pattern, as measurement attribute information.

[0176] In some embodiments, determining measurement attribute information based on the first auxiliary graphic and the mask layout at the location of the second auxiliary graphic includes:

[0177] The direction of the normal to the first auxiliary graphic at the location of the second auxiliary graphic is taken as the direction of the measurement line.

[0178] Calculate the width of the first auxiliary graphic at the fourth preset multiple, and use it as the length of the measurement line;

[0179] The measurement attribute information is obtained by determining the direction and length of the measurement line.

[0180] Optionally, such as Figure 8 As shown, there are no additional development patterns in the exposure and development diagram displayed on the left. The first auxiliary pattern displayed on the right is generally a long strip, and the direction perpendicular to the long side of the first auxiliary pattern is its normal direction. The normal direction of the first auxiliary pattern 810 at the location of the second auxiliary pattern 820 is identified, and this normal direction is determined as the direction of the measurement line 820. Next, the width of the first auxiliary pattern 810 at a fourth preset multiple can be calculated as the length of the measurement line. For example, the fourth preset multiple can be an integer, such as two times, three times, four times, etc. Taking a fourth preset multiple of two times as an example, that is, 2*CD. SRAFwidth The length of the measurement line is used as the reference. By summarizing the direction and length of each measurement line on each first auxiliary graphic, the measurement attribute information of the measurement line is obtained.

[0181] In this case, the direction of the measurement line 830 can be determined to be the normal direction of the first auxiliary figure 811, and the length of the measurement line 830 is 2*CD. SRAFwidth The measurement line 830 generated in this case and the development prediction result determined based on the measurement line 830 are shown in the figure below. Figure 8 As shown on the right side of the middle section.

[0182] Because the width of the first auxiliary graphic is measured in real time, the width of the first auxiliary graphic will be different in different mask layouts. For example, Figure 8 The width of the first auxiliary graphic 811 in the image is less than... Figure 6 The width of the first auxiliary graphic, when the values ​​of the third preset multiple and the fourth preset multiple are the same, Figure 8 The length of the measurement line 830 in the middle is less than Figure 6 The length of the measuring line 640 in the middle.

[0183] In S3084, measurement lines are generated on the second auxiliary graphic based on measurement attribute information.

[0184] Optionally, the center point of the second auxiliary graphic is used as the center point of the measurement line. Based on this, the measurement line is drawn on the second auxiliary graphic according to the direction and length of the measurement line indicated in the measurement attribute information. This measurement line can help identify the development result of at least one first auxiliary graphic.

[0185] In the above embodiments, measurement attribute information is first determined based on the recognition results, the second auxiliary graphic, and the mask layout. This measurement attribute information is used to characterize the orientation and / or size of the measurement lines. Then, based on the measurement attribute information, more reasonable measurement lines of different lengths and / or different angles are automatically generated on the second auxiliary graphic. This further ensures that the exposure and development results can be captured more accurately based on the measurement lines, improves data processing efficiency, and reduces rework rate.

[0186] See Figure 9A and Figure 9B , Figure 9A This is a schematic diagram for drawing measurement lines in related technologies. Figure 9B This is a schematic diagram of measurement lines generated according to some embodiments of this application. Figure 9AIn this design, the mask pattern includes several main patterns 910, several first sub-resolution exposure auxiliary patterns 920, and several second sub-resolution exposure auxiliary patterns 930. After simulated exposure of the mask pattern, main pattern development 940 corresponding to the main patterns 910, as well as SRAF development 950 and SRAF development 960, are generated. In related technologies, measurement lines are typically drawn on the SRAF, for example, measurement line 970a is drawn on the first sub-resolution exposure auxiliary pattern 920, and measurement line 980a is drawn on the second sub-resolution exposure auxiliary pattern 930. Then, the exposure and development results of the SRAF are attempted to be captured along the direction of measurement line 970a or 980a. However, in Figure 9A In practice, the measurement lines 970a and 980a drawn using relevant techniques cannot accurately capture the exposure and development results of SRAF, thus affecting the accuracy and efficiency of subsequent operations.

[0187] exist Figure 9B In this embodiment, a second auxiliary image 990 is first generated on the mask pattern, and then measurement lines 970b and 980b of appropriate direction and length are generated on the second auxiliary image. Obviously, the measurement lines 970b and 980b generated by this embodiment can accurately capture the exposure and development results of SRAF, thereby improving the accuracy and efficiency of subsequent operations.

[0188] In related technologies, for development prediction models (such as SPA models, SRAF / SBAR printing avoidance models), the initial stage typically involves designing test masks with various combinations of main patterns and scattering stripes (SBARs) of different sizes and positions. Next, it's necessary to collect the development states of real scattering stripes under different environments on the wafer, distinguish and classify them to determine the development changes of SRAF under different conditions. Then, based on the development patterns of real scattering stripes on the wafer, the development threshold of the light intensity formula within the OPC model is adjusted so that the light intensity at a certain threshold best matches the development data of the scattering stripes on the wafer, ultimately resulting in a development prediction model that can accurately predict the development state of scattering stripes.

[0189] However, the modeling methods used in related technologies often require significant manpower to distinguish and classify the development images of scattering stripes on tens of thousands of wafers. This is not only time-consuming and labor-intensive but also difficult to standardize, often necessitating multiple rounds of rework. Furthermore, the methods used in simulation software to determine the development state of scattering stripes are too simplistic. They can only generate vertical or horizontal measurement lines (cutlines) at fixed locations on the scattering stripes to read the simulated development profile in the vicinity. In reality, the development profile of scattering stripes on wafers is affected by various factors and can appear in any possible location. This makes the existing tools' ability to capture the development profile of scattering stripes very incomplete, severely impacting the reliability and accuracy of the development prediction model.

[0190] In some embodiments, the measurement lines are also used to assist in constructing a development prediction model (e.g., a SPA model), which is used at least to predict the development result of the first auxiliary pattern.

[0191] In some embodiments, the method further includes the step of constructing a development prediction model. Constructing the development prediction model may include:

[0192] Obtain the initial development prediction model;

[0193] Using the initial development prediction model, the simulated development result of at least one first auxiliary pattern in the mask pattern being captured in the measurement line direction is predicted;

[0194] Obtain the actual development result of at least one first auxiliary graphic in the mask pattern along the measurement line direction;

[0195] Compare the differences between simulated development results and actual development results;

[0196] If the comparison results indicate a large difference, the initial development prediction model is iteratively optimized until the difference in the comparison results meets the preset difference range, and the development prediction model is then constructed.

[0197] The preset range of differences can be adjusted according to the actual situation, and no specific limit is set here.

[0198] Optionally, during the modeling process, additional development patterns corresponding to the first auxiliary pattern are extracted using computer assistance. Based on this, the mask pattern is updated by generating a second auxiliary pattern. The prediction results of the development prediction model to be trained are collected through the second auxiliary pattern, thereby achieving accurate and complete training data collection and improving the modeling efficiency of the development prediction model.

[0199] Furthermore, evaluating the quality of a development prediction model primarily involves comparing whether the model's predicted development results match the actual development results. A good development prediction model needs to accurately predict the actual development results; therefore, the training data used for establishing and evaluating development prediction models (such as the SPA model) needs to be correctly extracted. The SPA model is a semi-empirical, semi-theoretical model, derived from the OPC model. Specifically, the entire training data collection process can include: coordinate calibration of the exposure and development map overlaid with the mask pattern; contour extraction; SRAF development judgment; generating a second auxiliary graphic on the mask pattern based on the development coordinates; determining the drawing length and direction of the measurement line (cutline) based on the relative position of the second auxiliary graphic and the main pattern; and extracting the model's predicted development results and the actual development results based on the measurement line.

[0200] The above embodiments utilize mask layout and exposure / development images for matching and recognition, and extract contours from the exposure / development images, linking with the positioning of additional development patterns to achieve automatic generation of measurement lines. Based on the mask layout, efficient development contour extraction is performed on tens of thousands of wafer-level scattering bar development images, with automatic coordinate calibration to obtain the accurate position of the scattering bar development contour on the mask layout. The center coordinates of the scattering bar development contour are used as the midpoint of the second auxiliary pattern. Next, by automatically analyzing the surrounding environment of the second auxiliary pattern, reasonable measurement lines of different lengths and angles are drawn on the second auxiliary pattern to simulate the capture of the development contour. In other words, more automated image processing technology is used to process the development data and optimize the measurement lines for capturing the development results of scattering bars.

[0201] In some embodiments, the measurement lines are further used to optimize the graphic size of at least one first auxiliary graphic. In this case, the method may further include an adjustment step for the first auxiliary graphic. This adjustment step may include: acquiring the development results of at least one first auxiliary graphic in the mask pattern along the measurement line direction; based on the development results, identifying a target auxiliary graphic among the at least one first auxiliary graphic that presents an additional development risk; and at least reducing the graphic size of the target auxiliary graphic until the development results of each first auxiliary graphic indicate that there is no additional development risk.

[0202] To facilitate a further understanding of this application, the following is combined with... Figure 10 To elaborate further. Figure 10 This is a process for determining development and correcting measurements according to some embodiments of this application, wherein, Figure 10 Image (a) is the original SEM image. Figure 10 Image (b) is an overlay of the original SEM image and the mask layout. Figure 10 (c) is a simulation diagram of the measurement line generated based on the second auxiliary graphic. Figure 10 In (d) is Figure 10 a partial enlarged schematic diagram of a partial area in (c); Figure 10 In (e) is Figure 10 a partial enlarged schematic diagram of (d) including a measurement line and a second drawing figure.

[0203] As Figure 10 shown, in the original SEM image, by performing contour extraction and overlaying with the mask layout, and coordinate correction, for example, the center coordinates of the original SEM image are corrected from (10370000, 6930000) to (10370000.642, 6929989.689). If the number of patterns between the main graphic layer and the image contour after overlaying is not equal, it is considered that there are additional developed patterns, and the additional developed patterns circled in (b) are identified as SRAF development, and the center coordinates of the SRAF development are output as (10370089.7, 6929987.0). Then, a second auxiliary figure is generated based on the center coordinates of the developed area. According to the position of the second auxiliary figure, a measurement line (cutline) with a drawing direction of 90° is determined. Next, the simulation calculation results of the development prediction model on this measurement line are read, and according to the simulation calculation results, it is determined that the model predicts the existence of development, and the result is consistent with the actual development result, which indicates that the development prediction model can accurately predict the SRAF development situation under this condition. Figure 10

[0204] In the above embodiment, by matching and identifying the mask layout and the exposure and development image, and according to the identification result of the additional developed pattern, a second auxiliary figure is first generated on the mask layout, and then the identification result, the second auxiliary figure and the mask layout are combined, and a more reasonable measurement line is generated on the second auxiliary figure, so that based on this measurement line, the exposure and development result can be captured more correctly and flexibly, the data processing efficiency is improved, and the rework rate is reduced. At the same time, it also reduces the dependence on personnel operation, which is beneficial to ensuring the reliability and accuracy of subsequent operations (such as modeling).

[0205] Figure 11 The embodiment of the present application also provides a device for generating a measurement line. Refer to shown, the device for generating a measurement line includes:

[0206] an acquisition module 1110, configured to acquire a mask layout and an exposure and development image of the mask layout, the mask layout including a main graphic and at least one first auxiliary graphic arranged near the main graphic;

[0207] an identification module 1120, configured to identify whether there are additional developed patterns of the first auxiliary graphic in the exposure and development image based on the exposure and development image and the mask layout;

[0208] ​The first generation module 1130 is used to generate a second auxiliary graphic on the mask pattern based on the recognition result; the second auxiliary graphic is used to locate the position of the measurement line.

[0209] The second generation module 1140 is used to generate measurement lines on the second auxiliary graphic based on the recognition result, the second auxiliary graphic, and the mask pattern.

[0210] In some embodiments, the identification module is further configured to:

[0211] Obtain the graphic outline of each pattern in the exposure and development image;

[0212] The overlapping result is obtained by performing graphic overlay processing based on the graphic outline and the graphic in the mask layout.

[0213] Based on the overlap results, identify whether at least one first auxiliary pattern exists in the exposure and development pattern as an additional development pattern.

[0214] In some embodiments, the first generation module includes:

[0215] The first position determination submodule is used to use the development position information of the additional development pattern as reference position information when the recognition result indicates that there is an additional development pattern.

[0216] The second position determination submodule is used to use the position information of the reference auxiliary graphic as the reference position information when the recognition result indicates that there is no additional developing graphic; the reference auxiliary graphic is at least one of the first auxiliary graphics whose distance from the main graphic meets the preset spacing condition;

[0217] The first generation submodule is used to generate a second auxiliary graphic on the mask pattern based on the reference position information.

[0218] In some embodiments, the first position determination submodule is further configured to:

[0219] In cases where additional development patterns are identified, the development position information of the additional development patterns in the coordinate system of the mask pattern is determined;

[0220] Use the development position information as the reference position information.

[0221] In some embodiments, the first generation submodule is further configured to:

[0222] The coordinate position corresponding to the reference development position information on the mask pattern is used as the center coordinate position of the second auxiliary graphic;

[0223] Based on the basic size units of the mask layout, the growth size information of the second auxiliary pattern is determined;

[0224] A second auxiliary graphic is generated on the mask pattern based on the center coordinate position and growth size information.

[0225] In some embodiments, the second generation module includes:

[0226] The attribute determination submodule is used to determine measurement attribute information based on the recognition results, the second auxiliary graphic and the mask layout. The measurement attribute information is used to characterize the orientation and / or size of the measurement line.

[0227] The generation submodule is used to generate measurement lines on the second auxiliary graphic based on measurement attribute information.

[0228] In some embodiments, the attribute determination submodule includes:

[0229] The first attribute determination unit is used to determine measurement attribute information based on the positional relationship between the second auxiliary graphic and the adjacent main graphic on the mask pattern when the identification result indicates the presence of an additional development graphic.

[0230] The second attribute determination unit is used to determine measurement attribute information based on the first auxiliary pattern and the mask pattern at the location of the second auxiliary pattern when the identification result indicates that there is no additional developing pattern.

[0231] In some embodiments, the first attribute determining unit is further configured to:

[0232] If the second auxiliary graphic and the adjacent main graphic on the mask pattern have projection overlap, and the spacing between the second auxiliary graphic and the two adjacent main graphics is the same, the direction of the measurement line is determined as the first direction and the length of the measurement line is determined as the first length.

[0233] If the second auxiliary graphic and the adjacent main graphic on the mask pattern have projection overlap, and the second auxiliary graphic is close to an adjacent main graphic, the direction of the measurement line is determined as the second direction and the length of the measurement line is determined as the second length.

[0234] If the second auxiliary graphic does not overlap with the adjacent main graphic on the mask pattern, the direction of the measurement line is determined to be the third direction and the length of the measurement line is determined to be the third length.

[0235] The first direction, the second direction, and the third direction are all different, and / or the first length and the third length are determined based on the spacing between the main graphics of the mask layout and the width of the first auxiliary graphics, respectively, and / or the second length is related to the width of the first auxiliary graphics.

[0236] In some embodiments, the orientation angle between the first direction and the second direction is 90°, and the orientation angle of the third direction is between the first direction and the second direction;

[0237] And / or, the first length is the difference between the spacing between the main patterns of the mask layout and the width of the first auxiliary pattern by a first preset multiple; the third length is the difference between the spacing between the main patterns of the mask layout and the width of the first auxiliary pattern by a second preset multiple; the second length is the width of the first auxiliary pattern by a third preset multiple.

[0238] In some embodiments, the second attribute determining unit is further configured to:

[0239] The direction of the normal to the first auxiliary graphic at the location of the second auxiliary graphic is taken as the direction of the measurement line.

[0240] Calculate the width of the first auxiliary graphic at the fourth preset multiple, and use it as the length of the measurement line;

[0241] The measurement attribute information is obtained by determining the direction and length of the measurement line.

[0242] In some embodiments, the measurement line is also used to assist in constructing a development prediction model, which is used at least to predict the development result of the first auxiliary pattern.

[0243] And / or, the measurement lines are also used to optimize the graphic size of at least one first auxiliary graphic.

[0244] In some embodiments, the exposure and development image is a scanning electron microscope image of the mask pattern after exposure and development.

[0245] Some embodiments of this application also provide an electronic device, which includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, the at least one instruction or the at least one program being loaded and executed by the processor to implement the measurement line generation method described in any embodiment of this application.

[0246] An optional hardware structure of the electronic device provided in some embodiments of this application can be as follows: Figure 12 As shown, it includes at least one processor 01, at least one communication interface 02, at least one memory 03, and at least one communication bus 04.

[0247] In this embodiment, the processor 01, communication interface 02, and memory 03 can communicate with each other via the communication bus 04. The processor 01 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of this application. The communication interface 02 can be an interface for a communication module used for network communication, such as the interface of a GSM module. The memory 03 may include high-speed RAM or non-volatile memory, such as at least one disk storage device. The memory 03 may store at least one instruction or at least one program segment, which is loaded and executed by the processor 01 to implement the measurement line generation method provided in the embodiments of this application.

[0248] It should be noted that the above-described implementing electronic device may also include other devices (not shown) that may not be essential to understanding the content disclosed in the embodiments of this application; given that these other devices may not be essential to understanding the content disclosed in the embodiments of this application, they will not be described one by one in the embodiments of this application.

[0249] Some embodiments of this application also provide a computer-readable storage medium storing at least one instruction or at least one program, which is loaded and executed by a processor to implement the measurement line generation method described in any embodiment of this application.

[0250] Some embodiments of this application also provide a computer program product or computer program including computer instructions stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the computer device to perform any of the above-described methods for generating measurement lines.

[0251] The embodiments of this application can be implemented by various means, such as hardware, firmware, software, or combinations thereof. In a hardware configuration, the method according to the exemplary embodiments of this application can be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, etc.

[0252] In firmware or software configuration, the embodiments of this application can be implemented in the form of modules, processes, functions, etc. Software code can be stored in a memory unit and executed by a processor. The memory unit is located inside or outside the processor and can send data to and receive data from the processor via various known means.

[0253] The technical effects achievable by the electronic device provided in this application are the same as those achievable by the storage device described in any of the above embodiments, and will not be repeated here.

[0254] It should be noted that the order of the embodiments described above is merely for descriptive purposes and does not represent the superiority or inferiority of the embodiments. Furthermore, specific embodiments have been described above. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps described in the claims can be performed in a different order than that shown in the embodiments and still achieve the desired result. Additionally, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired result. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0255] The various embodiments in this application are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, for embodiments such as apparatus or devices, since they are basically similar to the method embodiments, the description is relatively simple; relevant parts can be referred to the description of the method embodiments.

[0256] The above description is only a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for generating a measurement line, characterized in that, include: Obtain a mask pattern and an exposure and development map of the mask pattern, wherein the mask pattern includes a main pattern and at least one first auxiliary pattern disposed near the main pattern; Based on the exposure and development pattern and the mask pattern, identify whether the first auxiliary pattern has an additional development pattern in the exposure and development pattern; Based on the recognition results, a second auxiliary graphic is generated on the mask layout; Based on the recognition result, the second auxiliary graphic, and the mask pattern, measurement lines are generated on the second auxiliary graphic.

2. The method according to claim 1, characterized in that, The step of identifying whether the at least one first auxiliary pattern exists in the exposure and development pattern based on the exposure and development pattern and the mask pattern includes: Obtain the graphic outline of each pattern in the exposure and development image; Based on the graphic outline and the graphic in the mask layout, graphic overlap processing is performed to obtain the overlap result; Based on the overlap result, it is determined whether the at least one first auxiliary pattern exists in the exposure and development pattern as an additional development pattern.

3. The method according to claim 1, characterized in that, The step of generating a second auxiliary graphic on the mask layout based on the recognition result includes: If the identification result indicates the presence of additional developing patterns, the developing position information of the additional developing patterns shall be used as the reference position information; If the identification result indicates that there is no additional developing pattern, the position information of the reference auxiliary pattern is used as the reference position information; the reference auxiliary pattern is the first auxiliary pattern among the at least one first auxiliary pattern whose distance from the main pattern meets the preset spacing condition; Based on the reference position information, a second auxiliary graphic is generated on the mask pattern; the second auxiliary graphic is used to locate the position of the measurement line.

4. The method according to claim 3, characterized in that, The step of using the development position information of the additional development pattern as reference position information when the presence of an additional development pattern is identified includes: If an additional development pattern is identified, the development position information of the additional development pattern in the coordinate system of the mask pattern is determined; The development position information is used as the reference position information.

5. The method according to claim 3, characterized in that, The step of generating the second auxiliary graphic on the mask layout based on the reference position information includes: The coordinate position corresponding to the reference development position information on the mask pattern is used as the center coordinate position of the second auxiliary graphic; Based on the basic size units of the mask pattern, the growth size information of the second auxiliary pattern is determined; Based on the center coordinates and the growth size information, the second auxiliary graphic is generated on the mask pattern.

6. The method according to any one of claims 1-5, characterized in that, The step of generating measurement lines on the second auxiliary graphic based on the recognition result, the second auxiliary graphic, and the mask pattern includes: Based on the recognition result, the second auxiliary graphic, and the mask layout, measurement attribute information is determined, which is used to characterize the orientation and / or size of the measurement line; Based on the measurement attribute information, a measurement line is generated on the second auxiliary graphic.

7. The method according to claim 6, characterized in that, The step of determining measurement attribute information based on the recognition result, the second auxiliary graphic, and the mask layout includes: If the identification result indicates the presence of an additional developing pattern, the measurement attribute information is determined based on the positional relationship between the second auxiliary pattern and the adjacent main pattern on the mask pattern; If the identification result indicates that there is no additional developing pattern, the measurement attribute information is determined based on the first auxiliary pattern at the location of the second auxiliary pattern and the mask pattern.

8. The method according to claim 7, characterized in that, The determination of the measurement attribute information based on the positional relationship between the second auxiliary graphic and the adjacent main graphics on the mask layout includes: If the second auxiliary graphic and the adjacent main graphic on the mask pattern have projection overlap, and the spacing between the second auxiliary graphic and the two adjacent main graphics is the same, the direction of the measurement line is determined to be the first direction and the length of the measurement line is determined to be the first length. If the second auxiliary graphic and the adjacent main graphic on the mask pattern have a projection overlap, and the second auxiliary graphic is close to one of the adjacent main graphics, the direction of the measurement line is determined to be the second direction and the length of the measurement line is determined to be the second length. If the second auxiliary graphic does not have a projection overlap with the adjacent main graphic on the mask pattern, the direction of the measurement line is determined to be a third direction and the length of the measurement line is determined to be a third length. Wherein, the first direction, the second direction, and the third direction are all different, and / or, the first length and the third length are determined based on the main graphic spacing of the mask layout and the width of the first auxiliary graphic, respectively, and / or, the second length is related to the width of the first auxiliary graphic.

9. The method according to claim 8, characterized in that, The angle between the first direction and the second direction is 90°, and the angle of the third direction is between the first direction and the second direction; And / or, the first length is the difference between the spacing between the main graphics of the mask layout and the width of the first auxiliary graphics, which is a first preset multiple; The third length is the difference between the spacing between the main graphics of the mask pattern and the width of the first auxiliary graphic, which is a second preset multiple. The second length is the width of the first auxiliary graphic, which is a third preset multiple.

10. The method according to claim 7, characterized in that, The determination of the measurement attribute information based on the first auxiliary graphic at the position of the second auxiliary graphic and the mask layout includes: The direction of the normal to the first auxiliary graphic at the location of the second auxiliary graphic is taken as the direction of the measurement line; Calculate the width of the first auxiliary graphic at a fourth preset multiple, and use it as the length of the measurement line; The measurement attribute information is obtained by determining the direction and length of the measurement line.

11. The method according to claim 1, characterized in that, The measurement line is also used to assist in constructing a development prediction model, which is used at least to predict the development result of the first auxiliary pattern. And / or, the measurement lines are also used to optimize the graphic size of at least one of the first auxiliary graphics.

12. The method according to claim 1, characterized in that, The exposure and development image is a scanning electron microscope image of the mask pattern after exposure and development.

13. A measuring line generation device, characterized in that, include: An acquisition module is used to acquire a mask pattern and an exposure and development image of the mask pattern, wherein the mask pattern includes a main pattern and at least one first auxiliary pattern disposed near the main pattern; The identification module is used to identify, based on the exposure and development pattern and the mask pattern, whether the first auxiliary pattern has an additional development pattern in the exposure and development pattern; The first generation module is used to generate a second auxiliary graphic on the mask pattern based on the recognition result; The second generation module is used to generate measurement lines on the second auxiliary graphic based on the recognition result, the second auxiliary graphic, and the mask pattern.

14. An electronic device, characterized in that, The electronic device includes a processor and a memory, the memory storing at least one instruction or at least one program, the at least one instruction or the at least one program being loaded and executed by the processor to implement the measurement line generation method as described in any one of claims 1-12.

15. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores at least one instruction or at least one program, which is loaded and executed by a processor to implement the measurement line generation method as described in any one of claims 1-12.

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