Torque optimization method for semiconductor vacuum processing chamber
By adjusting the bottom aperture and load mass of the vacuum processing chamber, the torque of the semiconductor vacuum processing chamber was optimized, solving the problems of motor life and stability caused by vacuum force and reducing the risk of slippage and fragmentation.
Patent Information
- Application Number
- CN202511205021.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-26
- Publication Date
- 2025-12-02
AI Technical Summary
In semiconductor vacuum processing chambers, the increased torque caused by vacuum force affects the lifespan of the motor and the stability of the heating plate lifting motion components, posing a risk of slippage and fragmentation.
By adjusting the bottom aperture of the semiconductor vacuum processing chamber and the load mass of the lifting motion component, the output torque of the drive source fluctuates around zero. The vacuum force and load mass are balanced using the formula P*π*r2=m*g+1/2*L*FA or P*π*r2=m*g.
The quality of the transmission components has been improved, the risk of breakage has been reduced, the problem of coupling slippage has been solved, and the stability of the lifting motion components has been enhanced.
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Figure CN121051995A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor equipment manufacturing, and more particularly to semiconductor vacuum processing chambers. Background Technology
[0002] In existing technologies, the heating plate lifting motion assembly of coating equipment is mostly implemented in a vacuum environment. Under the action of a large vacuum force, coupling slippage often occurs, resulting in a short module lifespan and affecting the motion stability of the heating plate lifting motion assembly. In severe cases, there is a risk of slippage and fragmentation. In addition, due to the presence of vacuum force, the motor output torque will be large, affecting the motor's service life.
[0003] Therefore, there is an urgent need for a torque optimization method for semiconductor vacuum processing chambers. Summary of the Invention
[0004] To overcome the problem of increased torque caused by vacuum force, this invention proposes a torque optimization method for semiconductor vacuum processing chambers. This method optimizes the machine design, balances vacuum force and load mass, and keeps the forward and reverse output torque of the motor fluctuating around zero as much as possible.
[0005] This invention provides a torque optimization method for a semiconductor vacuum processing chamber, the method comprising:
[0006] Adjust the aperture size r of the hole at the bottom of the semiconductor vacuum processing chamber and / or adjust the mass m of the load borne by the lifting motion assembly so that the output torque of the drive source in the lifting motion assembly fluctuates around zero.
[0007] A portion of the load is located within the semiconductor vacuum processing chamber through the hole; the remainder of the load is outside the semiconductor vacuum processing chamber.
[0008] In one embodiment, the aperture size r of the hole at the bottom of the semiconductor vacuum processing chamber and / or the mass m of the load borne by the lifting motion assembly conform to the following relationship:
[0009] P*π*r 2 =m*g+1 / 2*L*F A ;
[0010] Where P is atmospheric pressure, L is the distance traveled, and F is the distance traveled. A is the elastic modulus of the bellows.
[0011] In one embodiment, the bellows is disposed below the location of the hole at the bottom of the semiconductor vacuum processing chamber.
[0012] In one embodiment, the aperture size r of the hole at the bottom of the semiconductor vacuum processing chamber and / or the mass m of the load borne by the lifting motion assembly conform to the following relationship:
[0013] P*π*r 2 =m*g;
[0014] Where P is atmospheric pressure and L is the distance traveled.
[0015] In one embodiment, the average output torque of the drive source within the lifting motion assembly is 0 N*m.
[0016] In one embodiment, the load is a heating plate assembly, and the lifting motion assembly is a heating plate lifting motion assembly for lifting the heating plate assembly.
[0017] In one embodiment, the hole is an opening through which the heating plate assembly passes into the semiconductor vacuum processing chamber.
[0018] In one embodiment, the load is a pin assembly, and the lifting motion component is a pin lifting motion component that lifts and lowers the pin assembly.
[0019] In one embodiment, the hole is through which the ejector assembly passes into the semiconductor vacuum processing chamber.
[0020] In one embodiment, the output torque is calculated as follows:
[0021]
[0022] in:
[0023] Fo represents preload;
[0024] μo is the internal friction coefficient of the preload nut in the transmission assembly;
[0025] η = mechanical efficiency;
[0026] i is the reduction ratio;
[0027] P B The pitch of the ball screw;
[0028] F is the force acting on the lifting motion component.
[0029] The torque optimization method for semiconductor vacuum processing chambers proposed in this invention optimizes the machine tool design, balances vacuum force and load mass, and keeps the forward and reverse output torque of the motor fluctuating around zero as much as possible. This torque optimization method for semiconductor vacuum processing chambers can improve the quality of transmission components, protect wafers, reduce the risk of fragmentation, solve the problem of coupling slippage, improve the stability of lifting motion components, and reduce the risk of slippage. Attached Figure Description
[0030] The above-described invention and the following detailed description will be better understood when read in conjunction with the accompanying drawings. It should be noted that the drawings are merely examples of the claimed invention. In the drawings, the same reference numerals represent the same or similar elements.
[0031] Figure 1 A schematic diagram of a semiconductor device according to an embodiment of the present invention is shown;
[0032] Figure 2 The graph shows the load torque value.
[0033] Figure 3 A schematic diagram of a semiconductor device according to an embodiment of the present invention is shown. Detailed Implementation
[0034] The following detailed description of the features and advantages of the present invention provides sufficient information for any person skilled in the art to understand and implement the invention. Furthermore, based on the specification, claims, and drawings disclosed herein, those skilled in the art can easily understand the related objectives and advantages of the invention. Although the description of the invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may arise based on the claims of the invention. To provide a thorough understanding of the invention, numerous specific details will be included in the following description. The invention may also be implemented without using these details. Moreover, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.
[0035] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0036] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.
[0037] It is understood that while terms such as "first," "second," and "third" may be used herein to describe various components, channels, assemblies, regions, layers, and / or parts, these components, channels, assemblies, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, assemblies, regions, layers, and / or parts. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0038] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.
[0039] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values are set as precisely as feasible.
[0040] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.
[0041] Figure 1 A schematic diagram of a semiconductor device according to an embodiment of the present invention is shown. The semiconductor device may be a coating device. The semiconductor device includes a semiconductor vacuum processing chamber 101, a heating plate assembly 102, and a heating plate lifting motion assembly 103.
[0042] The heating plate assembly 102 includes a heating plate 104, a heating plate support 105, and a bracket 106 located in the semiconductor vacuum processing chamber 101.
[0043] Heating plate support 105 supports heating plate 104. Heating plate support 105 is located on bracket 106.
[0044] The bottom of the semiconductor vacuum processing chamber 101 has an opening 107. The upper part of the heating plate support 105 passes through the opening 107 and is connected to the bottom of the heating plate 104.
[0045] A bellows 110 is provided between the heating plate support 105 and the bottom of the vacuum processing chamber 101. For example, the bellows 110 is located between the hole at the bottom of the semiconductor vacuum processing chamber and the heating plate support 105.
[0046] The bracket 106 is connected to the heating plate lifting motion assembly 103.
[0047] The heating plate lifting motion component 103 drives the heating plate component 102 to lift and lower via the bracket 106.
[0048] The heating plate lifting motion assembly 103 includes a drive source 108 and a transmission assembly 109.
[0049] In one embodiment, the drive source 108 may include a motor.
[0050] The transmission assembly 109 includes a lead screw and a slider, which converts rotary motion into linear motion.
[0051] The heating plate lifting motion assembly 103 may also include components such as couplings and reducers.
[0052] The heating plate assembly 102 serves as the load for the heating plate lifting motion assembly 103, and its force analysis is as follows: Figure 1 As shown. Since the semiconductor vacuum processing chamber 101 is in a vacuum state inside and the outside is an atmospheric environment, the heating plate assembly 102 is subjected to an upward vacuum force Fv. In addition, the heating plate assembly 102 as a whole is also subjected to a downward gravitational force G and a reaction force Fb from the bellows. Therefore, the total force acting on the drive source (e.g., a motor) by the heating plate assembly 102 is:
[0053] F = Fv - G - Fb (1)
[0054] in:
[0055] Fv is the vacuum force;
[0056] G represents the load force (gravity).
[0057] Fb is the reaction force of the bellows.
[0058] Figure 2 A graph showing the load torque values is provided. Curve 201 represents the torque value variation in the prior art, and curve 202 represents the optimized torque value according to an embodiment of the present invention.
[0059] The torque curve 201 indicates that the motor output torque is relatively large due to the influence of vacuum force, which will seriously affect the motor's lifespan over time.
[0060] The purpose of this invention is to keep the average value of the output torque around zero or to keep the output torque fluctuating around zero, for example, keeping it in the shape of curve 202.
[0061] This invention compensates for the increased output torque caused by vacuum force by adjusting the load mass or the aperture radius. The specific description is as follows:
[0062] The torque generated by the drive source (e.g., a motor) is:
[0063]
[0064] in:
[0065] Fo is the preload (N) (≈1 / 3F);
[0066] μo is the internal friction coefficient of the preload nut in the transmission assembly (usually 0.1 to 0.3);
[0067] η = Mechanical efficiency (0.85-0.95);
[0068] i = Reduction ratio (the reduction ratio of the mechanism);
[0069] P B = Pitch of the ball screw inside the transmission assembly (m / rev);
[0070] F is the force acting on the lifting motion component.
[0071] In order to obtain such Figure 2 The torque curve of 202 is defined in this invention with the following relationship:
[0072] Fv = G + 1 / 2 * L * F A (3)
[0073] in:
[0074] Fv is the vacuum force;
[0075] Fv=P*S=P*π*r 2 (4) r is the radius of the bottom opening of the vacuum chamber, P is the atmospheric pressure acting on the bottom opening, and S is the pressure-bearing area.
[0076] G represents the load force (gravity).
[0077] Where, G = m * g(5)
[0078] m is the load mass;
[0079] F A The elastic modulus of the bellows;
[0080] L represents the load travel distance, i.e., the distance the heating plate assembly rises or falls.
[0081] Substituting (4) and (5) into (3), we get:
[0082] P*π*r 2 = m*g + 1 / 2*L*F A (6)
[0083] Therefore, the load mass m and the opening radius r at the bottom of the vacuum chamber satisfy the above relationship, which allows the torque generated by the motor to fluctuate around zero, or the average torque to be maintained at around zero.
[0084] In one embodiment, if the load mass m cannot be adjusted, then it is only necessary to adjust the size of the opening radius r at the bottom of the vacuum chamber to satisfy equation (6).
[0085] In one embodiment, if the radius r of the opening at the bottom of the vacuum chamber cannot be adjusted, then it is only necessary to adjust the size of the load mass m so that it satisfies equation (6).
[0086] In one embodiment, when there is no bellows, the following equation (7) is satisfied:
[0087] P*π*r 2 = m*g (7)
[0088] Figure 3 A schematic diagram of a semiconductor device according to an embodiment of the present invention is shown. The semiconductor device may be a coating device. The semiconductor device includes a vacuum processing chamber 303, a heating plate assembly 304, a heating plate lifting motion assembly 305, a ejector pin assembly 306, and an ejector pin lifting motion assembly 307.
[0089] In this embodiment, the bottom of the vacuum processing chamber 303 has openings 301 and 302.
[0090] The heating plate support of the heating plate assembly 304 is connected to the bottom of the heating plate through the opening 301.
[0091] The ejector pin of the ejector pin assembly 306 enters the vacuum chamber through the opening 302.
[0092] In this embodiment, in order to keep the average torque generated by the drive source (e.g., motor) 308 of the ejector pin lifting motion assembly 307 around zero or to keep the output torque fluctuating around zero, the present invention sets the following relationship in the presence of a bellows:
[0093] Fv = G + 1 / 2 * L * F A (3)
[0094] in:
[0095] Fv is the vacuum force acting on the ejector pin assembly 306;
[0096] Fv=P*S=P*π*r 2 (4) r is the radius of the bottom opening 302 of the vacuum chamber, P is the atmospheric pressure acting on the bottom opening 302, and S is the pressure-bearing area.
[0097] G is the gravity of the ejector pin assembly 306;
[0098] Where, G = m * g(5)
[0099] m is the mass of the ejector pin assembly 306;
[0100] F A The elastic coefficient of the bellows is given here, and the bellows is positioned below the opening 302.
[0101] L represents the load travel distance, which is the distance the ejector pin assembly rises or falls.
[0102] Substituting (4) and (5) into (3), we get:
[0103] P*π*r 2 = m*g + 1 / 2*L*F A (6)
[0104] In one embodiment, when there is no bellows ( Figure 3 (The example shown is for the case where there is no bellows), then the following equation (7) is satisfied:
[0105] P*π*r 2 = m*g (7)
[0106] Therefore, the mass m of the ejector assembly 306 and the radius r of the bottom opening 302 of the vacuum chamber satisfy the above relationship, which means that the torque generated by the drive source 308 of the ejector lifting motion assembly 307 can fluctuate around zero as much as possible, or the average torque can be maintained at around zero.
[0107] Furthermore, in this embodiment, in order to keep the average torque generated by the drive source (e.g., motor) 310 of the heating plate lifting motion assembly 305 around zero or fluctuate the output torque around zero, the present invention sets the following relationship in the presence of the bellows 309:
[0108] Fv = G + 1 / 2 * L * F A (3)
[0109] in:
[0110] Fv represents the vacuum force acting on the heating plate assembly 304;
[0111] Fv=P*S=P*π*r 2 (4) r is the radius of the bottom opening 301 of the vacuum chamber, P is the atmospheric pressure acting on the bottom opening 301, and S is the pressure-bearing area.
[0112] G is the weight of the heating plate assembly 304;
[0113] Where, G = m * g(5)
[0114] m is the mass of the heating plate assembly 304;
[0115] F A The elastic modulus of the bellows 309;
[0116] L represents the load travel distance, i.e., the distance the heating plate assembly 304 rises or falls.
[0117] Substituting (4) and (5) into (3), we get:
[0118] P*π*r 2 = m*g + 1 / 2*L*F A (6)
[0119] In one embodiment, when there is no bellows, the following equation (7) is satisfied:
[0120] P*π*r 2 = m*g (7)
[0121] Therefore, the mass m of the heating plate assembly 304 and the radius r of the bottom opening 301 of the vacuum chamber satisfy the above relationship, which means that the torque generated by the drive source 310 of the heating plate lifting motion assembly 305 can fluctuate around zero as much as possible, or the average torque can be maintained at around zero.
[0122] In summary, by adjusting the load mass and / or the bottom aperture size of the semiconductor vacuum chamber to achieve a certain relationship between the two, the present invention can greatly improve the quality of the transmission components, protect the wafer, reduce the risk of fragmentation, solve the problem of coupling slippage, improve the stability of the lifting motion components, and reduce the risk of slippage.
[0123] It should be noted that the above formulas of the present invention use the same formulas and the same letters for both the ejector pin lifting motion assembly and the heating plate lifting motion assembly. For example, the elastic coefficient of the bellows used for the ejector pin lifting motion assembly and the elastic coefficient of the bellows used for the heating plate lifting motion assembly both use F. A This does not mean that the specific values of the two formulas need to be the same, but only that their physical meanings are the same. The use of a unified formula is to illustrate that this formula can be universally applied to situations where there is an opening at the bottom of a vacuum chamber, and any lifting or lowering motion component moves a load through that opening.
[0124] Those skilled in the art will understand that the various illustrative components, modules, blocks, units, circuits, systems, and steps described in conjunction with the embodiments disclosed herein can be implemented in hardware, software (including firmware, resident software, microcode, etc.), or a combination of both. To clearly illustrate this interchangeability between hardware and software, the various illustrative components, modules, blocks, units, circuits, systems, and steps described above are generalized in their functional form. Whether such functionality is implemented in hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the invention.
[0125] This application uses flowcharts to illustrate the operations or steps performed by a system according to embodiments of this application. It should be understood that the preceding or following operations or steps are not necessarily performed in exact order. Instead, various operations or steps can be processed in reverse order or simultaneously. Furthermore, other operations or steps may be added to these processes, or one or more operations or steps may be removed from these processes.
[0126] The terminology and expressions used above are for descriptive purposes only, and the invention should not be limited to these terms and expressions. The use of these terms and expressions does not mean excluding any illustrative and descriptive equivalent features (or parts thereof), and it should be recognized that various modifications that may exist should also be included within the scope of the claims. Other modifications, variations, and substitutions may also exist. Accordingly, the claims should be considered to cover all such equivalents.
[0127] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the present application requires more features than those mentioned in the claims.
[0128] Similarly, it should be noted that although the present invention has been described with reference to the specific embodiments described above, those skilled in the art should recognize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions can be made without departing from the spirit of the present invention. Therefore, any changes or modifications to the above embodiments within the scope of the essential spirit of the present invention will fall within the scope of the claims of this application.
Claims
1. A torque optimization method for a semiconductor vacuum processing chamber, characterized in that, The method includes: Adjust the aperture size r of the hole at the bottom of the semiconductor vacuum processing chamber and / or adjust the mass m of the load borne by the lifting motion assembly so that the output torque of the drive source in the lifting motion assembly fluctuates around zero. A portion of the load is located within the semiconductor vacuum processing chamber through the hole; the remainder of the load is outside the semiconductor vacuum processing chamber.
2. The torque optimization method for a semiconductor vacuum processing chamber as described in claim 1, characterized in that, The adjustment of the aperture size r of the hole at the bottom of the semiconductor vacuum processing chamber and / or the adjustment of the mass m of the load borne by the lifting motion assembly conform to the following relationship: P*π*r 2 =m*g+1 / 2*L*F A ; Where P is atmospheric pressure, L is the distance traveled, and F is the distance traveled. A is the elastic modulus of the bellows.
3. The torque optimization method for a semiconductor vacuum processing chamber as described in claim 2, characterized in that, The bellows is positioned below the location of the hole at the bottom of the semiconductor vacuum processing chamber.
4. The torque optimization method for a semiconductor vacuum processing chamber as described in claim 1, characterized in that, The adjustment of the aperture size r of the hole at the bottom of the semiconductor vacuum processing chamber and / or the adjustment of the mass m of the load borne by the lifting motion assembly conform to the following relationship: P*π*r 2 =m*g; Where P is atmospheric pressure and L is the distance traveled.
5. The torque optimization method for a semiconductor vacuum processing chamber as described in claim 1, characterized in that, The average output torque of the drive source within the lifting motion assembly is 0 N*m.
6. The torque optimization method for a semiconductor vacuum processing chamber as described in claim 1, characterized in that, The load is a heating plate assembly, and the lifting motion assembly is a heating plate lifting motion assembly for lifting the heating plate assembly.
7. The torque optimization method for a semiconductor vacuum processing chamber as described in claim 6, characterized in that, The hole is the opening through which the heating plate assembly passes into the semiconductor vacuum processing chamber.
8. The torque optimization method for a semiconductor vacuum processing chamber as described in claim 1, characterized in that, The load is a pin assembly, and the lifting motion component is a pin lifting motion component that lifts and lowers the pin assembly.
9. The torque optimization method for a semiconductor vacuum processing chamber as described in claim 8, characterized in that, The hole is the opening through which the ejector pin assembly passes into the semiconductor vacuum processing chamber.
10. The torque optimization method for a semiconductor vacuum processing chamber as described in claim 1, characterized in that, The output torque is calculated in the following way: in: Fo represents preload; μo is the internal friction coefficient of the preload nut in the transmission assembly; η = mechanical efficiency; i is the reduction ratio; P B The pitch of the ball screw; F is the force acting on the lifting motion component.